Henry Kressel
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Physics
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(Suggest an Edit or Addition)Henry Kressel's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Semiconductor Lasers and Heterojunction LEDs (1977) (408)
- Luminescence in Silicon‐Doped GaAs Grown by Liquid‐Phase Epitaxy (1968) (123)
- Interfacial recombination at /AlGa/As/GaAs heterojunction structures (1976) (104)
- Semiconductor devices for optical communication (1982) (102)
- AN EFFICIENT LARGE OPTICAL CAVITY INJECTION LASER (1970) (94)
- Al2O3 half‐wave films for long‐life cw lasers (1977) (84)
- CONTROL OF FACET DAMAGE IN GaAs LASER DIODES (1971) (84)
- Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid‐phase epitaxy (1973) (83)
- The temperature dependence of threshold current for double‐heterojunction lasers (1979) (79)
- Low‐threshold double heterojunction AlGaAs/GaAs laser diodes: Theory and experiment (1976) (72)
- Catastrophic Degradation in GaAs Injection Lasers (1967) (68)
- Luminescence due to Ge Acceptors in GaAs (1968) (61)
- Accelerated step-temperature aging of Al/x/Ga/1-x/As heterojunction laser diodes (1978) (60)
- The reliability of (AlGa)As CW laser diodes (1980) (59)
- The application of heterojunction structures to optical devices (1975) (51)
- Influence of device fabrication parameters on gradual degradation of /AlGa/As cw laser diodes (1974) (50)
- Large‐Optical‐Cavity (AlGa) As–GaAs Heterojunction Laser Diode: Threshold and Efficiency (1972) (50)
- Observations Concerning Radiative Efficiency and Deep‐Level Luminescence in n‐Type GaAs Prepared by Liquid‐Phase Epitaxy (1968) (50)
- Physical basis of noncatastrophic degradation in GaAs injection lasers (1969) (47)
- Optics and Photonics: Key Enabling Technologies (2012) (47)
- Control of Optical Losses in p‐n Junction Lasers by Use of a Heterojunction: Theory and Experiment (1970) (47)
- Very high radiance edge-emitting LED (1976) (40)
- Electrical and Optical Properties of n‐Type Si‐Compensated GaAs Prepared by Liquid‐Phase Epitaxy (1969) (37)
- New Deep-Level Luminescence in GaAs:Sn (1968) (35)
- Degradation of AlxGa1−xAs heterojunction electroluminescent devices (1974) (34)
- FABRY‐PEROT STRUCTURE AlxGa1−xAs INJECTION LASERS WITH ROOM‐TEMPERATURE THRESHOLD CURRENT DENSITIES OF 2530 A/cm2 (1970) (34)
- Properties and Applications of III–V Compound Films Deposited by Liquid Phase Epitaxy (1973) (33)
- IMPROVED RED AND INFRARED LIGHT EMITTING AlxGa1−xAs LASER DIODES USING THE CLOSE‐CONFINEMENT STRUCTURE (1969) (32)
- Red-light-emitting laser diodes operating CW at room temperature (1976) (32)
- Low-threshold al x Ga 1-x As visible and IR-light-emitting diode lasers (1970) (32)
- Competing for the Future: How Digital Innovations are Changing the World (2007) (31)
- Gallium arsenide and (alga)as devices prepared by Liquid-Phase epitaxy (Review Article) (1974) (31)
- Properties of Efficient Silicon‐Compensated AlxGa1−xAs Electroluminescent Diodes (1969) (31)
- Evidence for the role of certain metallurgical flaws in accelerating electroluminescent diode degradation (1970) (30)
- Spontaneous and stimulated recombination in p + -n-n + (AlGa)As-GaAs heterojunction laser diodes (1973) (29)
- Transverse mode selection in injection lasers with widely spaced heterojunctions (1972) (29)
- Luminescence from In0.5Ga0.5P prepared by vapor‐phase epitaxy (1973) (28)
- Novel GaAs–(AlGa)As Cold‐Cathode Structure and Factors Affecting Extended Operation (1972) (28)
- LOW‐THRESHOLD LOC GaAs INJECTION LASERS (1971) (26)
- The Effective Ionization Rate for Hot Carriers in GaAs (1966) (26)
- Internal optical losses in very thin CW heterojunction laser diodes (1975) (26)
- Measurements of refractive index step and of carrier confinement at (AlGa)As–GaAs heterojunctions (1973) (25)
- Lasing Transitions in p+‐n‐n+ (AlGa) As–Ga As Heterojunction Lasers (1972) (25)
- Carrier lifetimes in epitaxial InAs (1974) (25)
- Effect of Substrate Imperfections on GaAs Injection Lasers Prepared by Liquid‐Phase Epitaxy (1969) (24)
- Electroluminescence and photoluminescence of GaAs : Ge prepared by liquid phase epitaxy (1973) (24)
- AN OPTOELECTRONIC COLD CATHODE USING AN AlxGa1−xAs HETEROJUNCTION STRUCTURE (1970) (23)
- Visible GaAs0.7P0.3 cw heterojunction lasers (1977) (23)
- EFFICIENT PHOTOEMISSION FROM Ge‐DOPED GaAs GROWN BY LIQUID‐PHASE EPITAXY (1971) (23)
- Dependence of Threshold Current Density and Efficiency on Fabry‐Perot Cavity Parameters: Single Heterojunction (AlGa)As–GaAs Laser Diodes (1972) (23)
- Epitaxial silicon solar cells (1976) (21)
- Luminescence in Indirect Bandgap AlxGa1−xAs (1970) (21)
- EFFICIENT ELECTRON EMISSION FROM GaAs–Al1−xGaxAs OPTOELECTRONIC COLD‐CATHODE STRUCTURES (1971) (21)
- Effect of generation-recombination centers on the stress-dependence of Si p-n junction characteristics (1967) (20)
- Red-emitting Ga/As,P///In,Ga/P heterojunction lasers (1978) (20)
- Vapour-grown 1.3 μm InGaAsP/InP avalanche photodiodes (1979) (19)
- Entrepreneurship in the Global Economy: Engine for Economic Growth (2012) (19)
- Self‐sustained oscillations in (AlGa)As oxide‐defined stripe lasers (1979) (19)
- A new edge-emitting (AlGa)As heterojunction LED for fiber-optic communications (1975) (18)
- Reliability aspects and facet damage in high-power emission from (AlGa)As cw laser diodes at room temperature (1975) (17)
- Multiple layer (AlGa)As-GaAs heterojunction laser diodes: Synthesis and mode control* (1974) (17)
- Ionization Energy of Mg and Be Acceptors in GaAs (1970) (17)
- Laser diodes and LEDs for fiber optical communication (1980) (17)
- Radiative Recombination in Melt‐Grown n‐Type, Ge‐Doped GaAs (1967) (17)
- Epitaxial silicon solar cells on “ribbon” substrates (1977) (17)
- Optical feedback effects in cw injection lasers. (1978) (16)
- Heterojunction diodes of (AlGa)As−GaAs with improved degradation resistance (1975) (16)
- Epitaxial silicon solar cell (1975) (16)
- HIGH‐ORDER TRANSVERSE CAVITY MODES IN HETEROJUNCTION DIODE LASERS (1970) (16)
- Breakdown Voltage of Graded Gallium Arsenide p‐n Junctions (1963) (15)
- Materials for Heterojunction Devices (1980) (14)
- Heterojunction cold-cathode electron emitters of (AlGa) As-GaAs (1973) (14)
- Effect of edges on the reliability of GaAs and (AlGa) as heterojunction leds (1977) (13)
- cw laser diodes and high‐power arrays of InxGa1−xAs for 1.06‐μm emission (1974) (13)
- Photo and cathodoluminescence in vapor-grown AlAs☆ (1970) (12)
- Photocurrent measurements on GaP : N green‐light‐emitting diodes (1973) (12)
- Epitaxial silicon p‐n junctions on polycrystalline ``ribbon'' substrates (1974) (12)
- Electroluminescence in AlxGa1−xP Diodes Prepared by Liquid‐Phase Epitaxy (1968) (12)
- The future for LEDs (1972) (12)
- The effect of the donor concentration on the optical efficiency of solution-grown GaP diodes (1968) (11)
- Electroreflectance and photoluminescence studies of InP epitaxial layers highly doped with selenium (1981) (11)
- Electrical and Optical Properties of Vapor‐Grown GaAs:Si (1970) (10)
- Heterojunction Laser Diodes for Room Temperature Operation (1974) (9)
- Electrical and Optical Properties of GaAs Injection Lasers with Closely Compensated p‐Type Region (1968) (9)
- Long-term lifetests of c.w. (AlGa)As laser diodes at room temperature (1978) (8)
- Light-Emitting Diodes and Semiconductor Materials for Displays (1973) (8)
- Degradation in short wavelength (AlGa)As light-emitting diodes (1978) (8)
- Epitaxial solar cells on silicon EFG ’’ribbon’’ substrates (1976) (8)
- Efficient green electroluminescent diodes by "Double-bin" liquid-phase epitaxy (1972) (7)
- Effect of hydrostatic pressure on photoconductivity and electroluminescence of GaP:N (1974) (7)
- Observations concerning self-damage in GaAs injection lasers (1968) (7)
- High radiance, high speed Al x Ga 1-x As heterojunction diodes for optical communications (1973) (6)
- Chapter 2 – p–n Junctions and Heterojunctions (1977) (6)
- Chapter 1 The Effect of Crystal Defects on Optoelectronic Devices (1981) (6)
- Design curves for double-heterojunction laser diodes (1977) (5)
- Stimulated emission at 300°K and simultaneous lasing at two wavelengths in epitaxial Al x Ga l-x As injection lasers (1968) (5)
- Chapter 17 – Transient Effects in Laser Diodes (1977) (5)
- Investing in Dynamic Markets: Venture Capital in the Digital Age (2010) (4)
- Efficient modulation and coupling of CW junction laser light using electrooptic waveguides (1975) (4)
- Chapter 2 Heterojunction Laser Diodes (1979) (4)
- Properties of high‐voltage silicon epitaxial diodes (1974) (4)
- Characterization of epitaxial semiconductor films (1976) (3)
- Determination of epitaxial-layer impurity profiles by means of microwave-diode measurements (1963) (3)
- Red-light-emitting AlxGa1-xAs heterojunction laser diodes (1973) (3)
- Visible CW (AlGa)As heterojunction laser diodes (1976) (3)
- A REVIEW OF GRADUAL DEGRADATION PHENOMENA IN ELECTROLUMINESCENT DIODES (1974) (3)
- Competing for the future: Global reach, global repercussions (2007) (2)
- Announcing the new IEEE quantum electronics and applications group (1978) (2)
- Chapter 5 – Modes in Laser Structures: Mainly Theory (1977) (2)
- Competing for the future: The technology – how electronic devices work – digital systems and software (2007) (2)
- Competing for the future: Innovators, entrepreneurs, and venture capitalists (2007) (2)
- Chapter 10 High-Temperature Power Rectifiers of GaAs1-xPx (1971) (2)
- Progress in laser diodes (1973) (2)
- Comment on ``Local‐Mode Absorption and Defects in Compensated Silicon‐Doped Gallium Arsenide'' by W. G. Spitzer and W. Allred (1969) (1)
- Chapter 3 – Stimulated Emission and Gain (1977) (1)
- High-Speed Light-Emitting Diodes. (1975) (1)
- Competing for the future: R&D goes global (2007) (1)
- Entrepreneurship in the Global Economy: Select bibliography (2012) (1)
- Chapter 15 – Distributed-Feedback Lasers (1977) (1)
- CHAPTER 4 – ELECTROLUMINESCENT SOURCES FOR FIBER SYSTEMS (1981) (1)
- Injection laser for high-data-rate communication (1976) (1)
- Laser Diodes for Fiber Communications (1977) (1)
- Abstract: Liquid Phase Epitaxy—Techniques and Applications (1973) (1)
- Reliable semiconductor light sources for fiber optical communications (1975) (1)
- High-Average-Power Room-Temperature Large Optical Cavity (LOC) Lasers. (1972) (1)
- Chapter 16 – Device Reliability (1977) (1)
- Optical losses in "close-confinement" epitaxial p-n junction lasers - Theory and experiment (1970) (1)
- Thermoelectrically Cooled GaAIAs Laser Illuminator. (1970) (1)
- How to pick a winning product, market it, and build a successful business around it: a panel discussion (1991) (1)
- Lasers and LED's for optical communications using fibers (1981) (1)
- Epitaxial solar cells fabrication (1975) (1)
- Entrepreneurship in the Global Economy: Standing still is not an option: On promoting entrepreneurship and economic growth (2012) (0)
- Competing for the future: The demise of analog computers (2007) (0)
- Injection lasers for high data rate optical communications. Volume II. Final report 1 Jan-30 Sep 1975 (1975) (0)
- TP-C4 Vapor-Phase Growth of 1.3-pm InGaAsP/InP Hetero- (1979) (0)
- Semiconductor electroluminescent diodes for fiber-optical communications (1975) (0)
- Improved degradation resistance of (AlGa)As lasers (1980) (0)
- Investing in Dynamic Markets: Investing in early-stage technology: The Internet in the 1990s (2010) (0)
- Accelerated aging of laser diodes and LED's (1979) (0)
- Investing in Dynamic Markets: Venture capital: Past and future (2010) (0)
- STARTING A BUSINESS IN OPTOELECTRONICS (1991) (0)
- Scanning the issue - Special issue on consumer electronics (1994) (0)
- Competing for the future: Photodetectors (2007) (0)
- Chapter 12 – Diode Fabrication and Related Topics (1977) (0)
- Entrepreneurship in the Global Economy: Global problem, golden opportunity: Ron Stanton profits from market disruption (2012) (0)
- The formation and growth of Hypres, Inc (1988) (0)
- Riding the telecommunications waves (2006) (0)
- Investing in Dynamic Markets: Investing in a transformed market: Semiconductors (2010) (0)
- Competing for the future: Principles of LCD displays (2007) (0)
- MOS Transducers with Digital Measurement Capability (1968) (0)
- Entrepreneurship in the Global Economy: Building an economy: Government planning vs. entrepreneurial innovation (2012) (0)
- Light sources — An update (1980) (0)
- Entrepreneurship in the Global Economy: A world leader emerges: SanDisk and flash memories (2012) (0)
- Injection laser transmitter for long distance fiber optics communication (1977) (0)
- Efficient Al x Ga 1-x As injection lasers (1969) (0)
- Polarized injection laser development. Final report, 1 Apr 1972--31 Mar 1973 (1973) (0)
- Chapter 14 – Devices for Special Applications (1977) (0)
- Approaches to low-cost solar cells (1978) (0)
- Competing for the future: Financing innovation: Venture capital (2007) (0)
- Chapter 6 – Laser Radiation Fields (1977) (0)
- High power LOC heterojunction laser diodes and arrays (1971) (0)
- Efficient laser diodes of In x Ga 1-x As for 1.06 µm emission (1973) (0)
- High voltage, high Q epitaxial gallium arsenide diodes (1963) (0)
- Dislocations in silicon layers grown on silicon‐ribbon substrates (1977) (0)
- Optical Fiber Systems and Their Components: An Introduction. By A. B. Sharma, S. J. Halme, and M. M. Butusov (1981) (0)
- Competing for the future: MOSFETs in memory devices (2007) (0)
- Kressel H & Nelson H. Close-confinement gallium arsenide P-N junction lasers with reduced optical loss at room temperature. RCA Rev. 30:106-13, 1969 (2001) (0)
- Entrepreneurship in the Global Economy: Electronic innovation and the government: David Sarnoff creates the RCA empire (2012) (0)
- Low-threshold light-emitting-diode laser (1976) (0)
- Chapter 7 – Modes in Laser Structures: Mainly Experimental (1977) (0)
- Injection laser for high data rate communications. Final report 1 Mar 1976--28 Feb 1977 (1977) (0)
- Competing for the future: Building digital systems (2007) (0)
- Entrepreneurship in the Global Economy: Speeding voice and data traffic worldwide: Network microprocessors from RMI (2012) (0)
- Optics and Photonics: Key Enabling Technologies Thispaperreviewsthepast,present,andfuturevisionofthetechnologiesofopticsand photonics, including lasers, materials and devices, communications, bioimaging, displays, manufacturing, as well as the evolution of the photonics industry. (2012) (0)
- Special issue on characterization of semiconductor epitaxial films (1976) (0)
- Investing in Dynamic Markets: Introduction (2010) (0)
- Room Temperature CW Laser Diodes - An Overview* (1976) (0)
- Prolog to the Section on Optics and Photonics (2012) (0)
- Competing for the future: Making fiber optic cables (2007) (0)
- Competing for the future: The digital world: A global village (2007) (0)
- Epitaxial solar-cell fabrication, phase 2 (1977) (0)
- Competing for the future: Laser diode basics (2007) (0)
- Competing for the future: Your government is here to help (2007) (0)
- Improving the efficiency of GaP LED's which emit green light (1972) (0)
- Investing in Dynamic Markets: Bibliography (2010) (0)
- Reliable laser diodes: A status report (1975) (0)
- Thirty Revolutionary Years: How Photonic Innovations have Changed the World (2007) (0)
- Implementing information technology across the globe (2012) (0)
- Investing in a transformed market: Telecommunications (2010) (0)
- Government: Boss, financial partner, regulator – Entrepreneurs in mixed economies (2012) (0)
- High-average-power room-temperature large optical cavity (LOC) lasers. Final report 28 June 1971--27 June 1972 (1972) (0)
- An Optical Technique for Dye Laser Jet Stream Thickness Measurement in Real Time (1978) (0)
- Epitaxial Browth, Vols. A and B, edited by J. W. Matthews. Reviewer (1975) (0)
- Chapter 1 – Résumé of Relevant Concepts in Solid State Physics (1977) (0)
- Fundamental mode operation of large optical cavity laser diodes (1973) (0)
- Competing for the future: Introduction (2007) (0)
- P/N junction lasers: A status report (1969) (0)
- Very low threshold double heterojunction laser diodes of (AlGa)As (1975) (0)
- Investing in Dynamic Markets: Financing high-risk businesses (2010) (0)
- Venture investing: An uncertain science (2010) (0)
- Competing for the future: Edison's legacy: Industrial R&D (2007) (0)
- Room-temperature-operation visible-emission semiconductor diode lasers (1977) (0)
- Investing in Dynamic Markets: Hot markets, investment waves, bubbles, charlatans (2010) (0)
- HIGH PULSE POWER INJECTION LASER. (1967) (0)
- 4. Semiconductor Diode Lasers (1979) (0)
- Optimized Led for Single-Fiber Optical Links. (1976) (0)
- Competing for the future: Smaller, faster, more efficient MOSFETs (2007) (0)
- Competing for the future: Building an object-oriented program (2007) (0)
- Recent trends in room temperature laser diodes (1972) (0)
- High-power LOC lasers: synthesis and mode control. Final report 1 Dec 1973--30 Nov 1974 (1975) (0)
- Competing for the future: IP, TCP, and the Internet (2007) (0)
- Competing for the future: Light-emitting diodes (LEDs) (2007) (0)
- Semiconductor Light Sources for Fiber Optical Communication (1979) (0)
- Light sources and detectors for the 2-10-µm spectral region (1983) (0)
- Polarized Injection Laser Development. (1973) (0)
- A process for producing semiconductor devices (1969) (0)
- Injection laser for high-data-rate communication. Progress report No. 1 (1976) (0)
- Optoelectronic Electron Emitter. (1972) (0)
- Entrepreneurship in the Global Economy: Three startups in China: Entrepreneurs in a controlled economy (2012) (0)
- Chapter 9 – Epitaxial Technology (1977) (0)
- GALLIUM ARSENIDE VARACTOR DIODES. (1962) (0)
- TP-C4 Vapor-phase growth of 1.3-µm InGaAsP/InP heterojunction lasers, LED's, and APD's (1979) (0)
- Epitaxial solar cells fabrication. Final report, 11 Nov. 1974--10 Nov. 1975 (1975) (0)
- Competing for the future: Building multi-transistor logic gates (2007) (0)
- Chapter 13 – Heterojunction Devices of Alloys Other than GaAs–AlAs (1977) (0)
- Semiconductor diode laser material and devices with emission in visible region of the spectrum (1975) (0)
- Business and Technological Issues for the Commercialization of Optical Computing (1989) (0)
- Chapter 10 – Binary III–V Compounds (1977) (0)
- Competing for the future: Manufacturing: Globalizing faster than ever (2007) (0)
- Competing for the future: The digital world: Industries transformed (2007) (0)
- Chapter 8 – Relation between Electrical and Optical Properties of Laser Diodes (1977) (0)
- Investing in Dynamic Markets: Software products and services (2010) (0)
- Competing for the future: Genesis: Inventing electronics for the digital world (2007) (0)
- Session 26 Quantum electronics and energy conversion devices — Lasers and LED's (1977) (0)
- Competing for the future: CMOS reduces logic gate power dissipation (2007) (0)
- The 1.1 micrometer and visible emission semiconductor diode lasers. [(AlGa)As lasers] (1978) (0)
- Scratch encourages selective doping (1980) (0)
- Recent Advances in Optoelectronic Semiconductor Devices (1982) (0)
- Life studies of GaAs injection lasers (1969) (0)
- Near-field emission studies and degradation effects in GaAs injection lasers (1967) (0)
- Properties of very-low-threshold GaAs and AlGaAs injection lasers (1970) (0)
- Chapter 11 – Ternary and Quaternary III–V Compounds (1977) (0)
- Chapter 4 – Relevant Concepts in Electromagnetic Field Theory (1977) (0)
- Entrepreneurship in the Global Economy: Connecting the wireless networks of the world (2012) (0)
- The effect of structural imperfections on injection laser properties (1968) (0)
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