Henry Radamson
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Swedish professor of microelectronics
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Why Is Henry Radamson Influential?
(Suggest an Edit or Addition)According to Wikipedia, Henry H. Radamson is a Swedish professor of microelectronics known for his contribution to semiconductor devices and his invention, Multilayered Thermistor Structure. Radamson teaches and conducts research within the field of semiconductor physics at different universities and research centers in Sweden and Mid Sweden University, Department of Electronics DesignInstitute of Microelectronics, Chinese Academy of SciencesTexas Instruments, Semiconductor Research Corporation
Henry Radamson's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Graphene synthesis, characterization and its applications in nanophotonics, nanoelectronics, and nanosensing (2015) (124)
- Low-temperature growth and critical epitaxial thicknesses of fully strained metastable Ge1−xSnx (x≲0.26) alloys on Ge(001)2×1 (1998) (114)
- State of the Art and Future Perspectives in Advanced CMOS Technology (2020) (64)
- Increased nucleation temperature of NiSi2 in the reaction of Ni thin films with Si1−xGex (2002) (62)
- Miniaturization of CMOS (2019) (53)
- The Challenges of Advanced CMOS Process from 2D to 3D (2017) (48)
- Thermoelectric energy harvesting using array of vertically aligned Al-doped ZnO nanorods (2016) (47)
- Silicon Nanowires for Gas Sensing: A Review (2020) (46)
- PECVD-grown carbon nanotubes on silicon substrates with a nickel-seeded tip-growth structure (2006) (43)
- Phosphorus and boron diffusion in silicon under equilibrium conditions (2003) (41)
- Optimization of SiGe selective epitaxy for source/drain engineering in 22 nm node complementary metal-oxide semiconductor (CMOS) (2013) (39)
- Si and SiGe Nanowire for Micro-Thermoelectric Generator: A Review of the Current State of the Art (2021) (38)
- Integration of highly-strained SiGe materials in 14 nm and beyond nodes FinFET technology (2015) (37)
- Carbon-doped single-crystalline SiGe/Si thermistor with high temperature coefficient of resistance and low noise level (2010) (37)
- Monolithic Nanoscale Photonics-Electronics Integration in Silicon and Other Group IV Elements (2014) (36)
- A silicon molecular beam epitaxy system dedicated to device-oriented material research (1995) (35)
- Improvement of infrared detection using Ge quantum dots multilayer structure (2010) (33)
- Application of high-resolution x-ray diffraction for detecting defects in SiGe(C) materials (2005) (33)
- Sidewall transfer lithography for reliable fabrication of nanowires and deca-nanometer MOSFETs (2008) (32)
- Selective epitaxy growth of Si1−xGex layers for MOSFETs and FinFETs (2015) (31)
- Growth of metastable Ge1−xSnx/Ge strained layer superlattices on Ge(001)2×1 by temperature‐modulated molecular beam epitaxy (1995) (31)
- Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire (2006) (30)
- A robust spacer gate process for deca-nanometer high-frequency MOSFETs (2006) (30)
- Loading effect in SiGe layers grown by dichlorosilane- and silane-based epitaxy (2001) (29)
- Characterization of highly boron-doped Si, Si1 − xGex and Ge layers by high-resolution transmission electron microscopy (1995) (29)
- CoSi2/Si1−xGex/Si(001) heterostructures formed through different reaction routes: Silicidation‐induced strain relaxation, defect formation, and interlayer diffusion (1995) (29)
- Diffusion of phosphorus in relaxed Si1−xGex films and strained Si/Si1−xGex heterostructures (2003) (29)
- Characterization of Ni(Si,Ge) films on epitaxial SiGe(100) formed by microwave annealing (2012) (28)
- 3D Free‐Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching (2012) (28)
- Vertical Sandwich Gate-All-Around Field-Effect Transistors With Self-Aligned High-k Metal Gates and Small Effective-Gate-Length Variation (2020) (27)
- The effect of carbon and germanium on phase transformation of nickel on Si1-x-yGexCy epitaxial layers (2004) (27)
- Morphological instability of NiSi1−uGeu on single-crystal and polycrystalline Si1−xGex (2004) (27)
- Strain characterization of CoSi2/n‐Si0.9Ge0.1/p‐Si heterostructures (1994) (26)
- Strain engineering in GeSnSi materials (2013) (26)
- Characterization of highly Sb-doped Si using high-resolution x-ray diffraction and transmission electron microscopy (1994) (26)
- Pattern dependency in selective epitaxy of B-doped SiGe layers for advanced metal oxide semiconductor field effect transistors (2008) (25)
- Electron mobility enhancement in Si using doubly δ‐doped layers (1994) (25)
- Metal nano-floating gate memory devices fabricated at low temperature (2006) (24)
- Comprehensive Evaluation and Study of Pattern Dependency Behavior in Selective Epitaxial Growth of B-Doped SiGe Layers (2009) (23)
- The performance improvement evaluation for SiGe-based IR detectors (2011) (23)
- A low-complexity 62-GHz fT SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget (2000) (21)
- New method to calibrate the pattern dependency of selective epitaxy of SiGe layers (2009) (21)
- Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors (2017) (20)
- Impact of pattern dependency of SiGe layers grown selectively in source/drain on the performance of 22 nm node pMOSFETs (2015) (19)
- Design impact on the performance of Ge PIN photodetectors (2019) (18)
- Review of Si-Based GeSn CVD Growth and Optoelectronic Applications (2021) (17)
- SiGe/Si quantum structures as a thermistor material for low cost IR microbolometer focal plane arrays (2011) (17)
- Influence of surface treatment prior to ALD high-/spl kappa/ dielectrics on the performance of SiGe surface-channel pMOSFETs (2004) (17)
- Electrical and structural characterization of PtSi/p-Si1−xGex low Schottky barrier junctions prepared by co-sputtering (1997) (17)
- Growth of GeSnSiC layers for photonic applications (2013) (16)
- Review of Highly Mismatched III-V Heteroepitaxy Growth on (001) Silicon (2022) (16)
- Selective Growth of B- and C-Doped SiGe Layers in Unprocessed and Recessed Si Openings for p-type Metal-Oxide-Semiconductor Field-Effect Transistors Application (2010) (16)
- Kinetic Model of SiGe Selective Epitaxial Growth Using RPCVD Technique (2010) (16)
- Strain balance approach for optimized signal-to-noise ratio in SiGe quantum well bolometers (2009) (15)
- Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14nm nodes FinFET technology (2016) (15)
- Growth, electrical properties and reciprocal lattice mapping characterization of heavily B-doped, highly strained silicon-molecular beam epitaxial structures (1994) (15)
- Chemical vapor deposition of undoped and in-situ boron- and arsenic-doped epitaxial and polycrystalline silicon films grown using silane at reduced pressure (2000) (15)
- HfO2 gate dielectrics on strained-Si and strained-SiGe layers (2003) (15)
- Substrate engineering for Ni-assisted growth of carbon nano-tubes (2012) (15)
- Incorporation of boron in SiGe(C) epitaxial layers grown by reduced pressure chemical vapor deposition (2005) (15)
- Methods to reduce the loading effect in selective and non-selective epitaxial growth of sigec layers (2004) (14)
- Stabilization of Ge-rich defect complexes originating from E centers in SiGe:P (2010) (14)
- Study of selective isotropic etching Si1−xGex in process of nanowire transistors (2019) (13)
- High Performance p-i-n Photodetectors on Ge-on-Insulator Platform (2021) (13)
- Single crystal diamond for infrared sensing applications (2014) (13)
- Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors (2020) (13)
- Reduction of NiGe/n- and p-Ge Specific Contact Resistivity by Enhanced Dopant Segregation in the Presence of Carbon During Nickel Germanidation (2016) (12)
- Si1−yCy/Si(001) heterostructures made by sublimation of SiC during silicon molecular beam epitaxy (1997) (12)
- Relation between electrical activation and the B-induced strain in Si determined by reciprocal lattice mapping (1994) (12)
- Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices (2021) (12)
- Properties of La0.75Sr0.25MnO3 films grown on Si substrate with Si1−xGex and Si1−yCy buffer layers (2006) (12)
- Light-emitting nano-porous silicon structures fabricated using a plasma hydrogenation technique (2005) (12)
- Vacancy-impurity pairs in relaxed Si1- xGex layers studied by positron annihilation spectroscopy (2006) (12)
- Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs (2017) (11)
- Growth of high-quality epitaxy of GaAs on Si with engineered Ge buffer using MOCVD (2021) (11)
- Carbon-Related Materials: Graphene and Carbon Nanotubes in Semiconductor Applications and Design (2022) (11)
- pMOSFETs Featuring ALD W Filling Metal Using SiH4 and B2H6 Precursors in 22 nm Node CMOS Technology (2017) (10)
- MOSFETs with recessed SiGe Source/Drain junctions formed by selective etching and growth (2004) (10)
- The role of low temperature growth defects for the stability of strained Si/Si1−xGex heterostructures (1996) (10)
- Nano-structuring in SiGe by oxidation induced anisotropic Ge self-organization (2013) (10)
- CVD Growth of GeSnSiC Alloys Using Disilane, Digermane, Tin Tetrachloride and Methylsilane (2014) (10)
- On the Manifestation of Ge Pre-Amorphization Implantation (PAI) in Forming Ultrathin TiSix for Ti Direct Contact on Si in Sub-16/14 nm Complementary Metal-Oxide-Semiconductor (CMOS) Technology Nodes (2017) (10)
- Study of sigma-shaped source/drain recesses for embedded-SiGe pMOSFETs (2017) (10)
- Selective epitaxy of Si1-xGex layers for complementary metal oxide semiconductor applications (2003) (10)
- Effects of Carbon Pre-Germanidation Implantation on the Thermal Stability of NiGe and Dopant Segregation on Both n- and p-Type Ge Substrate (2015) (10)
- Negative differential resistance at room temperature in δ ‐doped diodes grown by Si‐molecular beam epitaxy (1994) (10)
- Improvement of the Thermal Stability of Nickel Stanogermanide by Carbon Pre-Stanogermanidation Implant into GeSn Substrate (2015) (9)
- Investigation of the Heteroepitaxial Process Optimization of Ge Layers on Si (001) by RPCVD (2021) (9)
- Formation of shallow junctions by HCl-based Si etch followed by selective epitaxy of B-doped Si1-xGex in RPCVD (2004) (9)
- Fabrication of 100 nm gate length MOSFET's using a novel carbon nanotube-based nano-lithography (2005) (9)
- Formation of Ni mono-germanosilicide on heavily B-doped epitaxial SiGe for ultra-shallow source/drain contacts (2002) (9)
- The effect of strained Si1−xGex and Si1−yCy layers for La0.75Sr0.25MnO3 films grown on oxide-buffered Si substrates (2006) (9)
- Phosphorus profile control in low-temperature silicon epitaxy by reduced pressure chemical vapor deposition (2002) (8)
- The effective masses in strained InGaAs/InP quantum wells deduced from magnetoexcitation spectroscopy (1997) (8)
- Nanometer-Thick ZnO/SnO2 Heterostructures Grown on Alumina for H2S Sensing (2022) (8)
- Vertical Sandwich GAA FETs With Self-Aligned High-k Metal Gate Made by Quasi Atomic Layer Etching Process (2021) (8)
- Observed Critical Thickness in Selectively and Non-Selectively Grown Si1-xGex Layers on Patterned Substrates (2002) (8)
- Selective epitaxial growth of B-doped SiGe and HCl etch of Si for the formation of SiGe:B recessed source and drain (pMOS transistors) (2008) (8)
- Application of selective epitaxy for formation of ultra shallow SiGe-based junctions (2004) (8)
- Fabrication and thermoelectric characterization of GeSn nanowires (2014) (7)
- Systematic optimization of phosphorous diffusion for solar cell application (2016) (7)
- Structural investigation of SiC epitaxial layers grown under microgravity and on-ground conditions (1999) (7)
- ISFET immunosensor improvement using amine-modified polystyrene nanobeads (2018) (7)
- Study of Isotropic and Si-Selective Quasi Atomic Layer Etching of Si1−xGex (2020) (7)
- Selective Digital Etching of Silicon-Germanium using Nitric and Hydrofluoric Acids. (2020) (7)
- Effect of strain on Ni-(GeSn)x contact formation to GeSn nanowires (2014) (7)
- High performance infra-red detectors based on Si/SiGe multilayers quantum structure (2012) (7)
- A Base-Collector Architecture for SiGe HBTs using Low-Temperature CVD Epitaxy Combined with Chemical-Mechanical Polishing (2002) (7)
- A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm (2020) (6)
- Ultra-high efficiency piezotronic sensing using piezo-engineered FETs (2018) (6)
- Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications (2022) (6)
- Kinetic Modeling of Low Temperature Epitaxy Growth of SiGe Using Disilane and Digermane (2012) (6)
- Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon (2022) (6)
- Effects of carbon pre-germanidation implant into Ge on the thermal stability of NiGe films (2015) (6)
- Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS) (2019) (6)
- Improvement in epitaxial quality of selectively grown Si1−xGex layers with low pattern sensitivity for CMOS applications (2005) (6)
- Phosphorus diffusion in the presence of threading dislocations in strain relaxed SiGe films (2006) (5)
- Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching (2012) (5)
- Terahertz Emission from Phosphor Centers in SiGe and SiGe/Si Semiconductors (2007) (5)
- Unprecedented Thermoelectric Power Factor in SiGe Nanowires Field-Effect Transistors (2017) (5)
- Strain characterization of Ge1−xSix and heavily B-doped Ge layers on Ge(001) by two-dimensional reciprocal space mapping (1996) (5)
- Strain Modulation of Selectively and/or Globally Grown Ge Layers (2021) (5)
- Comparison of Strain Relaxation in Si/SiGe/Si Heterostructures after Annealing in Oxidizing and Inert Atmospheres (1999) (5)
- Growth of High Frequency SiGe Heterojunction Bipolar Transistors Structures (2002) (5)
- First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates. (2021) (5)
- Characterization of SiGe/Si multi-quantum wells for infrared sensing (2013) (5)
- The electronic structure of InGaAs/InP quantum wells measured by Fourier transform photoluminescence excitation spectroscopy (1996) (5)
- Defect density in non-selective and selective Si/SiGe structures (2002) (4)
- Integration of Selective Epitaxial Growth of SiGe/Ge Layers in 14nm Node FinFETs (2016) (4)
- Influence of doping on thermal stability of Si/Si1−xGex/Si heterostructures (2003) (4)
- Improved designs of Si-based quantum wells and Schottky diodes for IR detection (2016) (4)
- Effect of strain, substrate surface and growth rate on B-doping in selectively grown SiGe layers (2008) (4)
- Improving the Performance of SiGe-Based IR Detectors (2010) (4)
- NiSi integration in a non-selective base SiGeC HBT process (2005) (4)
- Scaling and evolution of device architecture (2018) (4)
- Understanding dipole formation at dielectric/dielectric hetero-interface (2018) (4)
- Enhanced n-type dopant solubility in tensile-strained Si (2008) (4)
- Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium (2020) (4)
- Group IV Materials for Low Cost and High Performance Bolometers (2012) (4)
- Growth of high quality epitaxial Si1-x-yGexCy layers by using chemical vapor deposition (2004) (4)
- Integrating 3D PIN germanium detectors with high-k ALD fabricated slot waveguides (2014) (4)
- pMOSFETs with recessed and selectively regrown Si1−xGex source/drain junctions (2005) (4)
- Integration of HCl chemical vapour etching and SiGe:B selective epitaxy for source/drain application in MOSFETs (2006) (4)
- SCANNING CAPACITANCE MICROSCOPY FOR TWO-DIMENSIONAL DOPING PROFILING IN SI- AND INP-BASED DEVICE STRUCTURES (1999) (4)
- SiNx films and membranes for photonic and MEMS applications (2019) (4)
- SiN-based platform toward monolithic integration in photonics and electronics (2021) (4)
- A high speed SiGe HBT process using non-selective epitaxy and in situ phosphorus doped polysilicon emitter: Optimization of device design rules (1999) (3)
- The influence of Si coverage in a chip on layer profile of selectively grown Si1 − xGex layers using RPCVD technique (2008) (3)
- Integration of silicon nitride waveguide in Ge-on-insulator substrates for monolithic solutions in optoelectronics (2021) (3)
- Quantum structure based infrared detector research and development within Acreo’s centre of excellence IMAGIC (2010) (3)
- Fabrications of size-controlled SiGe nanowires using I-line lithography and focused ion beam technique (2014) (3)
- Characteristics of Si d-Layers Embedded in GaAs (1999) (3)
- A novel method for source/drain ion implantation for 20 nm FinFETs and beyond (2019) (3)
- Moore’s Law for Photonics and Electronics (2015) (3)
- Fabrication of Relaxed Germanium on Insulator via Room Temperature Wafer Bonding (2014) (3)
- Optimization of Selective Growth of SiGe for Source/Drain in 14nm and Beyond Nodes FinFETs (2017) (3)
- Dopant redistribution and formation of electrically active complexes in SiGe (2001) (3)
- High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers (2008) (3)
- Comprehensive temperature modeling of strained epitaxial silicon-germanium alloy thermistors (2009) (3)
- Electrical properties of sub-100 nm SiGe nanowires (2016) (3)
- Metal Oxide Semiconductor Field Effect Transistors (2015) (3)
- Diffusion of phosphorus in strained Si/SiGe/Si heterostructures (1999) (2)
- Fabrication of strained Ge on insulator via room temperature wafer bonding (2014) (2)
- Systematic Optimization of Boron Diffusion for Solar Cell Emitters (2017) (2)
- Electrical characterization and the strain compensation effect and thermal stability of B-doped heterostructures (1996) (2)
- Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around Nanodevice (2021) (2)
- Selective Epitaxial Growth with Full Control of Pattern Dependency Behavior for pMOSFET Structures (2008) (2)
- A low cost multi quantum SiGe/Si/Schottky structure for high performance IR detectors (2011) (2)
- The effect of C on emitter–base design for a single-polysilicon SiGe:C HBT with an IDP emitter (2004) (2)
- Enhanced device designs for Si-based infrared detectors (2015) (2)
- Phosphorus diffusion in silicon; influence of annealing conditions (2001) (2)
- Process optimizations to recessed e-SiGe source/drain for performance enhancement in 22 nm all-last high-k/metal-gate pMOSFETs (2016) (2)
- The Effect of Doping on the Digital Etching of Silicon-Selective Silicon–Germanium Using Nitric Acids (2021) (2)
- Layer-by-layer 3D printing of Si micro- and nanostructures by Si deposition, ion implantation and selective Si etching (2012) (2)
- Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application (2020) (2)
- A comparison of power factor in n and p-type SiGe nanowires for thermoelectric applications (2017) (2)
- Investigation on direct-gap GeSn alloys for high-performance tunneling field-effect transistor applications (2017) (2)
- Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser (2022) (2)
- Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate (2022) (2)
- Novel metallization processes for sub-100 nm magnetic tunnel junction devices (2019) (1)
- European Materials Research Society (EMRS) Symposium on Transport and Photonics in Si-based Nanomaterials and Nanodevices - May 9-13, 2-11 (2012) (1)
- Sensitivity of the crystal quality of SiGe layers grown at low temperatures by trisilane and germane (2016) (1)
- Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure (2004) (1)
- Deep silicon etching for thermopile structures using a modified Bosch process (2019) (1)
- Study of n-type doping in germanium by temperature based PF+ implantation (2019) (1)
- Strain relaxation in epitaxial Si1-xGex layers during some silicidation processes (1994) (1)
- CVD growth of high speed SiGe HBTs using SiH4 (2000) (1)
- A Si/SiGe MOSFET utilizing low-temperature wafer bonding (2005) (1)
- Introduction: Scope and Purpose of Book (2015) (1)
- Integration of Selective SiGe Epitaxy for Source/Drain Application in MOSFETs (2006) (1)
- Investigation of Properties of Highly Boron-Doped SiGe(C) Thin Layers (2004) (0)
- Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition (2022) (0)
- Novel integration concepts for sige-based rf-MOSFETs (2006) (0)
- HfO/sub 2/ for strained-Si and strained-SiGe MOSFETs (2003) (0)
- Properties of Si δ-layers embedded in GaAs (1998) (0)
- Combined Si Schottky barriers and SiGe/Si multi quantum wells for infrared detection (2011) (0)
- Significant Improvement of Thermoelectric Efficiency in SiGe Nanowires (2016) (0)
- Sensitivity of Signal-to-Noise Ratio to the Layer Profile and Crystal Quality of SiGe/Si Multilayers (2016) (0)
- Silicon and Group IV Photonics (2015) (0)
- Special Issue: Silicon Nanodevices (2022) (0)
- THz amplification based on impurity-band transitions in Si/GeSi heterostructures (2008) (0)
- Basics of metal–oxide–semiconductor field-effect transistor (MOSFET) (2018) (0)
- Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region (2023) (0)
- GeSnSi CVD Epitaxy using Silane, Germane, Digermane, and Tin tetrachloride (2016) (0)
- Si δ-layers embedded in GaAs (1998) (0)
- Chemical Vapor Deposition of Silicon in a Lamp-Heated Reactor Effects of Heat Absorption, Emission, and Conduction (2002) (0)
- Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs (2022) (0)
- Challenges in ultra-shallow junction technology (2018) (0)
- H2S Gas Sensing Based on SnO2 Thin Films Deposited by Ultrasonic Spray Pyrolysis on Al2O3 Substrate (2021) (0)
- Integration issues of a new method for formation of shallow junctions in MOSFET structures using recessed and selectively regrown Si1-xGex (0)
- Invited) Characterization of Group IV Based Nanowires Manufactured on Advanced Engineered Substrates (2016) (0)
- Vacancy-impurity pairs in relaxed Si (2006) (0)
- Undoping Strained Ge Quantum Well with Two Million Highly Hole Mobility (2022) (0)
- Complementing Silicon With Other Materials for Light Emission, Efficient Light Modulation and Subwavelength Light Confinement (2015) (0)
- (Invited) On the Manipulation of Phosphorus Diffusion as Well as the Reduction of Specific Contact Resistivity in Ge by Carbon Co-Doping (2016) (0)
- Formation of shallow source/drain junctions in MOSFET structures by using Cl-based processes in reduced pressure CVD reactors (2006) (0)
- Mechanisms of diffusion-enhanced thermal stability of Si/Si1−xGex/Si heterostructures grown by chemical vapor deposition (2004) (0)
- Growth of GeSnSi Alloys by Reduced Pressure CVD (2015) (0)
- Selective Epitaxy of Group IV Materials for CMOS Application (2018) (0)
- Title : Stabilization of Ge-rich defect complexes originating from E centers in Si 1-xGex : P Year : 2010 Version : Final published version (2010) (0)
- Fabrication and Characterization of SiGe on Insulator through Condensation and Wafer Bonding Techniques (2016) (0)
- Strain and Electrical Characterization of Boron-Doped SiGeC Layers Grown by Chemical Vapor Deposition (2004) (0)
- High Performance Temperature Sensors using SC-CVD Diamond Schottky Diodes (2012) (0)
- Dopant incorporation in thin strained Si layers implanted with Sb (2010) (0)
- Vacancy-impurity pairs in n-type Si1-xGex studied by positron spectroscopy (2006) (0)
- Base resistance scaling for SiGeC HBTs with a fully nickel-silicided extrinsic base (2005) (0)
- High Frequency Performance of SiGeC HBTs with Selectively & Non-Selectively Grown Collector (2004) (0)
- Basics of Integrated Photonics (2015) (0)
- HRXRD analysis of SiGeC layers for BiCMOS applications (2004) (0)
- Depletion mode insulating gate 4H-SiC Field Effect Transistor for RF power amplifiers (article not available) (2003) (0)
- Process integration of a new method for formation of shallow junctions in MOSFET structures using recessed and selectively regrown Si1-xGex (2004) (0)
- As- or P-Doped Si Layers Grown by RPCVD for Emitter Application in SiGeC HBTs (2004) (0)
- Selective Growth of B- and C-doped SiGe Layers in Unprocessed and Recessed Si Openings for pMOSFET Application (2009) (0)
- Noise and Mobility Characteristics of Bulk and Fully Depleted SOI pMOSFETs using Si and SiGe channels (2006) (0)
- Structural and Optical Characteristics of Epitaxially Grown SiGe on Si for Electronic and Photonic Device Applications (2017) (0)
- 3D Patterning: 3D Free‐Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching (Adv. Funct. Mater. 19/2012) (2012) (0)
- A Physical Modeling Study of Mobility Enhancement in Stressed Ge-on-insulator pMOSFET (2019) (0)
- Growth and Characterization of Boron-Doped Si1-x-yGexCy Layers Grown by Reduced Pressure Chemical Vapor Deposition (2005) (0)
- Recessed and epitaxially regrown SiGe(B) source/drain junctions with Ni salicide contacts (2004) (0)
- Sige Selective Epitaxial Growth Process for 22 Nm Node CMOS and Beyond (2014) (0)
- B-doped SIGE(C) materials for high performance devices (2011) (0)
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