Herbert Kroemer
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Nobel laureate in physics
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Physics
Herbert Kroemer's Degrees
- PhD Physics University of Göttingen
Why Is Herbert Kroemer Influential?
(Suggest an Edit or Addition)According to Wikipedia, Herbert Kroemer is a German-American physicist who, along with Zhores Alferov, received the Nobel Prize in Physics in 2000 for "developing semiconductor heterostructures used in high-speed- and opto-electronics". Kroemer is professor emeritus of electrical and computer engineering at the University of California, Santa Barbara, having received his Ph.D. in theoretical physics in 1952 from the University of Göttingen, Germany, with a dissertation on hot electron effects in the then-new transistor. His research into transistors was a stepping stone to the later development of mobile phone technologies.
Herbert Kroemer's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Heterostructure bipolar transistors and integrated circuits (1982) (833)
- Polar-on-nonpolar epitaxy (1987) (437)
- Theory of a Wide-Gap Emitter for Transistors (1957) (430)
- Measurement of isotype heterojunction barriers by C‐V profiling (1980) (347)
- Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks (2001) (330)
- A proposed class of hetero-junction injection lasers (1963) (313)
- The 6.1 Å family (InAs, GaSb, AlSb) and its heterostructures: a selective review (2004) (285)
- Nobel Prize for Physics (1937) (264)
- Effects of interface layer sequencing on the transport properties of InAs/AlSb quantum wells: Evidence for antisite donors at the InAs/AlSb interface (1990) (244)
- Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region (1985) (244)
- Molecular-beam epitaxy growth of tilted GaAs/AlAs superlattices by deposition of fractional monolayers on vicinal (001) substrates (1988) (232)
- Theory of the energy-band lineup at an abrupt semiconductor heterojunction (1977) (221)
- Corrected Values of Fowler-Nordheim Field Emission Functions v(y) and s(y) (1953) (209)
- Heterostructure bipolar transistors: What should we build? (1983) (186)
- Determination of valence and conduction‐band discontinuities at the (Ga,In) P/GaAs heterojunction by C‐V profiling (1987) (182)
- Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz (1997) (166)
- Theory of the Gunn effect (1964) (162)
- Electron concentrations and mobilities in AlSb/InAs/AlSb quantum wells (1989) (160)
- Interface connection rules for effective-mass wave functions at an abrupt heterojunction between two different semiconductors (1983) (158)
- Thermal Physics, 2nd ed. (1998) (156)
- Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots (1996) (147)
- Heterostructure devices: A device physicist looks at interfaces (1983) (138)
- Improved efficiency in semiconducting polymer light-emitting diodes (1991) (131)
- Metal-polymer schottky barriers on cast films of soluble poly(3-alkylthiophenes) (1987) (127)
- Nonlinear space-charge domain dynamics in a semiconductor with negative differential mobility (1966) (123)
- Molecular beam epitaxial growth of GaAs on Si(211) (1985) (121)
- Reduction of oxides on silicon by heating in a gallium molecular beam at 800 °Ca) (1980) (117)
- Molecular beam epitaxial growth of GaP on Si (1984) (116)
- Introduction to superconducting circuits (1999) (108)
- Heterojunction bipolar transistor using a (Ga,In)P emitter on a GaAs base, grown by molecular beam epitaxy (1985) (105)
- On the (110) orientation as the preferred orientation for the molecular beam epitaxial growth of GaAs on Ge, GaP on Si, and similar zincblende‐on‐diamond systems (1980) (103)
- Polar‐on‐nonpolar epitaxy: Sublattice ordering in the nucleation and growth of GaP on Si(211) surfaces (1982) (100)
- GaAs on Si and related systems: Problems and prospects (1989) (98)
- The Gunn effect under imperfect cathode boundary conditions (1968) (92)
- Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors (1994) (90)
- Staggered-lineup heterojunctions as sources of tunable below-gap radiation: Operating principle and semiconductor selection (1983) (86)
- Electrical properties and band offsets of InAs/AlSb n‐N isotype heterojunctions grown on GaAs (1989) (82)
- Interface roughness scattering in InAs/AlSb quantum wells (1992) (82)
- Molecular‐beam‐epitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation (1986) (80)
- The Einstein relation for degenerate carrier concentrations (1978) (76)
- QUASI-ELECTRIC FIELDS AND BAND OFFSETS: TEACHING ELECTRONS NEW TRICKS (2002) (75)
- Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors (1995) (74)
- Surface donor contribution to electron sheet concentrations in not‐intentionally doped InAs‐AlSb quantum wells (1992) (74)
- GaSb/AlSb multiquantum well structures: molecular beam epitaxial growth and narrow-well photoluminescence (1983) (73)
- Prediction of semiconductor heterojunction discontinuities from bulk band structures (1976) (72)
- High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers (1992) (71)
- On the theory of Debye averaging in the C-V profiling of semiconductors (1981) (69)
- Problems in the theory of heterojunction discontinuities (1975) (65)
- Staggered‐lineup heterojunctions as sources of tunable below‐gap radiation: Experimental verification (1984) (63)
- Band offsets at heterointerfaces: Theoretical basis, and review of recent experimental work (1986) (62)
- Zero-field spin-splitting in InAs/AlSb quantum wells (1996) (62)
- Determination of heterojunction band offsets by capacitance‐voltage profiling through nonabrupt isotype heterojunctions (1985) (62)
- The university of the future (2007) (58)
- Direct patterning of surface quantum wells with an atomic force microscope (1998) (57)
- Metal-polymer Schottky barriers on processible polymers (1989) (57)
- 1.55-/spl mu/m InP-lattice-matched VCSELs with AlGaAsSb-AlAsSb DBRs (2001) (56)
- Fermi-level pinning position at the Au–InAs interface determined using ballistic electron emission microscopy (1997) (55)
- Barrier control and measurements: Abrupt semiconductor heterojunctions (1984) (54)
- 88 °C, continuous-wave operation of apertured, intracavity contacted, 1.55 μm vertical-cavity surface-emitting lasers (2001) (54)
- Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties (1995) (54)
- Hot-electron relaxation effects in devices☆ (1978) (54)
- Are there Tamm‐state donors at the InAs–AlSb quantum well interface? (1992) (49)
- Methane/hydrogen‐based reactive ion etching of InAs, InP, GaAs, and GaSb (1991) (48)
- Excitonic optical nonlinearity induced by internal field screening in (211) oriented strained‐layer superlattices (1991) (47)
- MBE Growth of GaAs on Si: Problems and Progress (1986) (47)
- Electrically-pumped, single-epitaxial VCSELs at 1.55 /spl mu/m with Sb-based mirrors (1999) (45)
- InAs‐AlSb quantum well as superconducting weak link with high critical current density (1990) (43)
- Solid State Physics - Literature List (2002) (42)
- Surface‐layer modulation of electron concentrations in InAs–AlSb quantum wells (1993) (41)
- Negative conductance in semiconductors (1968) (41)
- Well width dependence of electron transport in molecular‐beam epitaxially grown InAs/AlSb quantum wells (1992) (39)
- Detailed theory of the negative conductance of bulk negative mobility amplifiers, in the limit of zero ion density (1967) (39)
- Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor (1993) (39)
- Influence of collective effects on the linewidth of intersubband resonance (1998) (38)
- IIA-7 an AlSb/InAs/AlSb quantum well HFT (1987) (37)
- Bias stabilization for resonant tunnel diode oscillators (1995) (36)
- Quantum mechanics : for engineering, materials science, and applied physics (1994) (36)
- Band gap modulation in two dimensions by MBE growth of tilted superlattices and applications to quantum confinement structures (1989) (36)
- InAs-AlSb quantum wells in tilted magnetic fields (2000) (36)
- A reflection high-energy electron diffraction study of (100) GaAs vicinal surfaces (1989) (35)
- Analytic approximations for degenerate accumulation layers in semiconductors, with applications to barrier lowering in isotype heterojunctions (1981) (34)
- Energy-dependant cyclotron mass in InAs/AlSb quantum wells (1994) (34)
- Far-infrared photoresponse of the InAs/GaInSb superlattice (1991) (32)
- Influence of the buffer layers on the morphology and the transport properties in InAs/(Al,Ga)Sb quantum wells grown by molecular beam epitaxy (1996) (31)
- Quality of AlAs‐like and InSb‐like interfaces in InAs/AlSb superlattices: An optical study (1993) (31)
- Effects of barrier thicknesses on the electron concentration in not‐intentionally doped InAs–AlSb quantum wells (1992) (31)
- Interface roughness of InAs/AlSb superlattices investigated by x-ray scattering (1996) (30)
- Quasi-electric fields and band offsets: teaching electrons new tricks (Nobel lecture). (2001) (30)
- Evolution of the band-gap and band-edge energies of the lattice-matched GaInAsSb∕GaSb and GaInAsSb∕InAs alloys as a function of composition (2005) (30)
- Step‐flow growth on strained surfaces: (Al,Ga)Sb tilted superlattices (1990) (29)
- On the interface connection rules for effective‐mass wave functions at an abrupt heterojunction between two semiconductors with different effective mass (1982) (29)
- Some Design Considerations for Multi-Quantum-Well Lasers (1984) (29)
- Serpentine superlattice: concept and first results (1991) (29)
- Study of interface composition and quality in AlSb/InAs/AlSb quantum wells by Raman scattering from interface modes (1992) (29)
- (Invited) Heterostructures for Everything: Device Principle of the 1980's? (1981) (28)
- Quantum Hall effect in InAs/AlSb quantum wells (1991) (28)
- External negative conductance of a semiconductor with negative differential mobility (1965) (28)
- Effects of the interface bonding type on the optical and structural properties of InAs‐AlSb quantum wells (1994) (28)
- Photocollection efficiency and interface charges of MBE‐grown abrupt p (GaAs) ‐N (Al0.33Ga0.67As) heterojunctions (1978) (28)
- Local conduction band offset of GaSb self-assembled quantum dots on GaAs (1997) (27)
- Contact resistance of superconductor‐semiconductor interfaces: The case of Nb‐InAs/AlSb quantum‐well structures (1994) (26)
- Photoconductivity in AlSb/InAs quantum wells (1993) (26)
- Band offsets and chemical bonding: the basis for heterostructure applications (1996) (26)
- Strong far-infrared intersubband absorption under normal incidence in heavily n-type doped nonalloy GaSb-AlSb superlattices (1993) (25)
- A GaP decomposition source for producing a dimer phosphorus molecular beam free of gallium and tetramer phosphorus (1985) (25)
- Operational aspects of a gallium phosphide source of P2 vapor in molecular beam epitaxy (1982) (25)
- Neutron irradiation effects on AlGaAs/GaAs heterojunction bipolar transistors (1988) (25)
- An (Al,Ga)As/GaAs heterostructure bipolar transistor with nonalloyed graded-gap ohmic contacts to the base and emitter (1987) (24)
- Nonequilibrium ac Josephson effect in mesoscopic Nb-InAs-Nb junctions (1999) (23)
- Persistence length and molecular mass distribution of a thermotropic main-chain liquid-crystal polymer (1991) (23)
- InAs‐AlSb heterostructure field‐effect transistors fabricated using argon implantation for device isolation (1990) (23)
- Large-amplitude oscillation dynamics and domain suppression in a superlattice Bloch oscillator (2000) (23)
- A reflection high‐energy electron diffraction study of AlAs/GaAs tilted superlattice growth by migration‐enhanced epitaxy (1990) (21)
- Sublattice allocation and antiphase domain suppression in polar‐on‐nonpolar nucleation (1987) (21)
- Properties of (Ge2)x(GaAs)1−x alloys grown by molecular beam epitaxy (1985) (21)
- MBE growth of tilted superlattices: advances and novel structures (1991) (21)
- Quantum mechanics (1994) (20)
- An AlSb–InAs–AlSb double‐heterojunction P‐n‐P bipolar transistor (1992) (20)
- Photoluminescence from narrow InAs-AlSb quantum wells (1993) (19)
- Protection of an interrupted molecular‐beam epitaxially grown surface by a thin epitaxial layer of InAs (1984) (19)
- Generalized proof of Shockley's positive conductance theorem (1970) (19)
- Electroluminescence efficiency of -oriented InGaN-based light-emitting diodes at low temperature (2008) (19)
- The effect of Landau quantization on cyclotron resonance in a non-parabolic quantum wells (1993) (18)
- Relation between growth conditions and reconstruction on InAs during molecular beam epitaxy using an As2 source (1984) (18)
- Buffer-dependent mobility and morphology of InAs(Al,Ga)Sb quantum wells (1997) (18)
- Staggered to straddling band lineups in InAs/Al(As, Sb) (1999) (17)
- Operational experience with a valved antimony cracker source for use in molecular beam epitaxy (1998) (17)
- Quantized conductance of ballistic constrictions in InAs/AlSb quantum wells (1993) (17)
- The growth of (Al,Ga)Sb tilted superlattices and their heteroepitaxy with InAs to form corrugated-barrier quantum wells (1991) (17)
- Electrooptic modulation in polar growth axis InGaAs/GaAs multiple quantum wells (1991) (17)
- The Thomas precession factor in spin–orbit interaction (2003) (17)
- Microscopic structure of GaSb(001) c(2{times}6) surfaces prepared by Sb decapping of MBE-grown samples (1997) (17)
- Raman scattering in a Ga1−xInxP strained heterostructure (1989) (16)
- Size-induced direct-to-indirect gap transition in GaSb/AlSb multiple quantum well structures (1986) (16)
- Reflection high‐energy electron diffraction oscillations during molecular‐beam epitaxy growth of gallium antimonide, aluminum antimonide, and indium arsenide (1989) (16)
- Magneto-transport in InAs/AlSb quantum wells with large electron concentration modulation (1992) (15)
- Quasiparticle transport and induced superconductivity in InAs-AlSb quantum wells with Nb electrodes (1994) (15)
- The role of nonuniform dielectric permittivity in the determination of heterojunction band offsets by C-V profiling through isotype heterojunctions (1985) (15)
- Raman scattering study of InAs/GaInSb strained layer superlattices (1991) (15)
- On the nature of the negative-conductivity resonance in a superlattice Bloch oscillator (2000) (15)
- Superconducting YBaCuO thin films on GaAs/AlGaAs (1990) (15)
- Photoluminescence study of lateral carrier confinement and compositional intermixing in (Al,Ga)Sb lateral superlattices (1992) (14)
- Improved composition control of digitally grown AlAsSb lattice-matched to InP (1999) (13)
- Spin-and Landau-splitting of the cyclotron resonance in a nonparabolic two-dimensional electron system (1993) (13)
- Intersubband transitions in InAs/AlSb quantum wells (1993) (13)
- HOLE TRANSPORT ACROSS THE (AL,GA)(AS,SB) BARRIER IN INAS-(AL,GA)(AS,SB) HETEROSTRUCTURES (1998) (13)
- Collective effects in intersubband transitions (2000) (13)
- Deep levels in Te‐doped AlSb grown by molecular beam epitaxy (1990) (13)
- A reflectance anisotropy spectroscopy study of GaSb(100)c(2 × 6) surfaces prepared by Sb decapping (1996) (13)
- Temperature‐dependent mobility of a GaAs/AlGaAs heterostructure after deposition of MgO and superconducting YBa2Cu3O7−x (1992) (12)
- Electronic properties and far infrared spectroscopy of InAs/AlSb quantum wells (1992) (12)
- Molecular beam epitaxial growth of InAs on a TlBaCaCuO superconducting film (1990) (12)
- THE STRUCTURE OF GaAs/Si(211) HETEROEPITAXIAL LAYERS (1987) (12)
- Simple rate equation model for hypothetical doubly stimulated emission of both photons and phonons in quantum-well lasers (1981) (11)
- Band-structure instability in long-period one-dimensional superlattices under strong population inversion (1977) (11)
- Al(As,Sb) heterobarriers on InAs: growth, structural properties and electrical transport (1998) (11)
- In situ YBa2Cu3O7−x superconductor films on GaAs/AlAs superlattices (1991) (11)
- Collective effects in the intersubband resonance of InAs/AlSb quantum wells (1996) (11)
- Current-voltage characteristics of semiconductor-coupled superconducting weak links with large electrode separations (1998) (10)
- Theory of Heterojunctions: A Critical Review (1985) (10)
- Speculations about future directions (2002) (10)
- Capacitance-voltage profiling on polar III-nitride heterostructures (2012) (10)
- Electronic interactions at superconductor-semiconductor interfaces (1994) (10)
- Semiconductor heterojunctions at the Conference on the Physics and Chemistry of Semiconductor Interfaces: A device physicist’s perspective (1993) (9)
- Alternating copolymers of butadiene and propylene: Properties and characterization† (1982) (9)
- Effect of a parasitic series resistance on the performance of bulk negative conductivity amplifiers (1966) (9)
- Rotational slip in III‐V heterostructures grown by molecular‐beam epitaxy (1988) (9)
- Nano-Whatever: Do We Really Know Where We Are Heading? (2009) (9)
- Control of dislocations in GaAs grown on Si(211) by molecular beam epitaxy (1987) (9)
- On the derivation of ℏ ⋅ d k/dt=F, the k‐space form of Newton’s law for Bloch waves (1986) (9)
- Critique of two recent theories of heterojunction lineups (1983) (8)
- AlAsSb-based distributed Bragg reflectors using InAlGaAs as high-index layer (1999) (7)
- Luminescence of GaAs/(Al,Ga)As superlattices grown on Si substrates, containing a high density of threading dislocations: strong effect of the superlattice period (1988) (7)
- Slow Gunn domains with field‐independent trapping (1972) (7)
- ELECTRICAL AND OPTICAL PROPERTIES OF HEAVILY N-DOPED GASB-ALSB MULTIQUANTUM WELL STRUCTURES FOR INFRARED PHOTODETECTOR APPLICATIONS (1994) (7)
- Giant third-order nonlinear susceptibilities for in-plane far-infrared excitation of single InAs quantum wells (1994) (6)
- Design and analysis of InAs/AlSb ballistic constrictions for high temperature operation and low gate leakage (1993) (6)
- Surface morphology of GaSb grown on (1 1 1)B GaAs by molecular beam epitaxy (1999) (6)
- TRANSVERSE NEGATIVE DIFFERENTIAL MOBILITIES FOR HOT ELECTRONS AND DOMAIN FORMATION IN GERMANIUM (1968) (6)
- On the group velocity of Bloch waves (1975) (6)
- The Double-Heterostructure Concept: How It Got Started (2013) (6)
- Growth and characterization of serpentine superlattices in the GaSb‐AlSb system (1993) (6)
- How Incorrect Is the Classical Partition Function for the Ideal Gas (1980) (6)
- Electron Transport in InAs/AlSb Quantum Wells: Interface Sequencing Effects (1989) (6)
- Design of cathode doping notches to achieve uniform fields in transferred-electron devices (1977) (6)
- Superconductivity and the Josephson effect in a periodic array of NbInAsNb junctions (1996) (5)
- Nano‐whatever: Do we really know where we are heading? (2005) (5)
- Direct-indirect band gap crossover in two-dimensional GaSb/AlSb-quantum-well-structures (1987) (5)
- Electronic Properties of Dislocations in Heavily Dislocated Quantum well Structures: Doping Effects (1989) (5)
- Enhanced T 0 values in GaSb/AlSb multiquantum well heterostructures (1987) (5)
- On the interface structure in InAs/AlSb quantum wells grown by molecular‐beam epitaxy (1993) (5)
- Landau and spin levels in InAs quantum wells resolved with in-plane and parallel magnetic fields (1998) (5)
- m-plane ( 101¯0) and ( 202¯1) GaN/AlxGa1–xN conduction band offsets measured by capacitance-voltage profiling (2014) (5)
- Interstitial potential differences, electronegativity differences, and effective ionic charges in zinc-blende-type semiconductors (1977) (5)
- Quasiparticle dynamics in ballistic weak links under weak voltage bias: an elementary treatment (1998) (4)
- Hot carrier relaxation and recombination in GaSb/AlSb quantum wells (1988) (4)
- “Quasi-direct” narrow GaSb-AlSb (100) quantum wells (1993) (4)
- Anisotropic magnetotransport in an antiwire array inserted in a GaAs heterostructure (1991) (4)
- Novel approaches in 2 and 3 dimensional confinement structures : processing and properties (1990) (4)
- Scattering mechanisms in InAs-AlSb quantum wells (1998) (4)
- Observation of phase separation in (Ge2)x(GaAs)1−x alloys grown by molecular beam epitaxy (1984) (4)
- UNIVERSAL RELATION BETWEEN BAND RENORMALIZATION AND CARRIER DENSITY IN TWO-DIMENSIONAL ELECTRON-HOLE PLASMAS (1987) (4)
- Optical spectroscopy on Eo+Δo transitions in GaSbAlSb quantum wells (1987) (3)
- Verification of Direct-Indirect Cross-Over in GaSb/AlSb MQW's by Time Resolved Spectroscopy (1987) (3)
- Comments on "Generalized proof of Shockley's positive conductance theorem" (1971) (3)
- The rise of the laser. Interview by Joerg Heber. (2010) (3)
- Computer simulation of InP transferred-electron amplifiers for Ka-band (1977) (3)
- Cyclotron resonance of electron-hole systems in InAs/GaSb/AlSb (1996) (3)
- Heterojunction Devices (1992) (3)
- THE DRIFT TRANSISTOR (1991) (3)
- E0+Δ0 transitions in GaSb/AlSb quantum wells (1987) (3)
- Magnetotransport in lateral periodic potentials formed by surface‐layer‐induced modulation in InAs‐AlSb quantum wells (1993) (3)
- Subcubic power dependence of third-harmonic generation for in-plane, far-infrared excitation of InAs quantum wells (1994) (3)
- Peierls instability in a nearly-free-electron model, including nonlinear screening (1976) (3)
- Rebuttal to "Response to 'critique of two recent theories of heterojunction lineups'" (1983) (2)
- Far-infrared studies of induced superconductivity in quantum wells (1996) (2)
- Summary Abstract: Protection of an interrupted molecular‐beam‐epitaxially‐grown surface by a thin epitaxial layer of InAs (1985) (2)
- Structural and electrical properties of low-temperature-grown Al(As,Sb) (1997) (2)
- Book-Review - Thermal Physics - 3RD.ED. (1981) (2)
- On the magnetoresistance anisotropy of a 2-dimensional electron gas with large half-integer filling factors (1999) (2)
- Preparation and some Properties of Mg2Ge Single Crystals and of Mg2Ge p‐n Junctions (1965) (2)
- Supercurrent flow through a semiconductor: the transport properties of superconductor–semiconductor hybrid structures (1998) (2)
- Recombination in multiple QWS under high excitation conditions (1991) (2)
- Midinfrared studies of the contact region at superconductor–semiconductor interfaces (2000) (2)
- Summary Abstract: MBE growth of GaAs and GaP on Si(211) (1985) (2)
- AlSb/InAs/AlSb quantum wells (1990) (2)
- Summary Abstract: Growth of device‐quality GaAs and (Al,Ga)As on (211)‐oriented silicon substrates, with thin (0.1 μm) superlattice buffer layers (1986) (2)
- Improved charge control and the frequency performance in InAs/AlSb HFET's (1993) (2)
- Heterostructure Device Physics: Band Discontinuities as Device Design Parameters (1985) (2)
- MA-2 current problems in heterojunction devices and their physics (1978) (1)
- Lateral potential modulation in InAs/AlSb quantum wells by wet etching (1994) (1)
- Auger recombination in GaSbAlSb multi quantum well heterostructures (1988) (1)
- Far-infrared harmonic generation from semiconductor heterostructures (1993) (1)
- Induced superconductivity in InAs quantum wells with superconducting contacts (1997) (1)
- IIIA-5 AlGaAs/GaAs heterostructure bipolar transistor with nonalloyed graded-gap ohmic contacts to the base and emitter (1986) (1)
- Wave Packet Dynamics in a Biased Finite-Length Superlattice (2003) (1)
- Design considerations in electrically-pumped, single-epitaxial VCSELs at 1.55 /spl mu/m with Sb-based mirrors (1999) (1)
- Luminescence polarization anisotropy in (Al,Ga)As serpentine quantum wire arrays (1992) (1)
- Nonequilibrium supercurrents in mesoscopic Nb-InAs-Nb junctions (1999) (1)
- From electron tubes to nanostructures: 60 years of electron device research (2002) (1)
- Heterostructures for Everything: Device Principles of the 1980's? (1980) (1)
- Negative bulk mobility devices - what next? (1974) (1)
- Imaging and local transport measurements of GaSb self-assembled quantum dots on GaAs (1998) (1)
- Regular periodic “explosions” of electron—hole drops under steady-state illumination and microwave heating (1976) (1)
- Defining Scientific Misconduct (2002) (1)
- Growth Of Quantum Wire Superlattices And Tilted Superlattices By Molecular Beam Epitaxy (1988) (1)
- 1.55-/spl mu/m, InP-lattice-matched VCSELs operating at RT under CW (2000) (1)
- Hole accumulation in (In)GaSb/AlSb quantum wells induced by the Fermi-level pinning of an InAs surface (1995) (1)
- Devices for the Future: A Peek into the Next Century (1994) (1)
- VIA-1 staggered-lineup heterojunctions as sources of tunable below-gap radiation: Experimental verification (1984) (1)
- AISb--InAs-AlSb P-n-P transistors with low turn-on voltage, narrow bases, and low base resistance (1992) (1)
- Induced superconductivity and residual resistance in InAs quantum wells contacted with superconducting Nb electrodes (1998) (1)
- Considerations regarding the use of semiconductor heterojunctions for laser operation (1964) (1)
- Subcritically doped bulk negative conductivity diodes (1966) (1)
- Summary Abstract: Growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation (1986) (1)
- Low-temperature (4.2–9K) transport along InAs-AlSb quantum wells with δ-doped barriers and superconducting niobium electrodes (1993) (1)
- Photoinduced absorption within the valence Γ and the conduction L-subband manifolds in undoped GaSb/AlSb superlattices (1994) (1)
- TP-A4 C-V profiling through n-n heterojunctions (1979) (0)
- SOLID STATE MICROWAVE AND POWER DEVICES. VOLUME 1. INTEGRATED AMPLIFIER. (1964) (0)
- Superconductor-Semiconductor Devices (1996) (0)
- Self-inflicted weirdness (2012) (0)
- Activation of murine microglial cells by muramyl dipeptide alone and in combination with Toll-like receptor agonists (2014) (0)
- Direct-to-indirect band gap conversion by application of electric field in the GaSbAlSb quantum well system (1988) (0)
- Summary Abstract: Properties of (Ge2)x(GaAs)1−x alloys grown by molecular beam epitaxy (1985) (0)
- Research of MBE growth and properties of semiconductors hetero-interfaces with unusual band lineups (1987) (0)
- SOLID STATE MICROWAVE AND POWER DEVICES. VOLUME 2. MAGNESIUM GERMANIDE. (1964) (0)
- Research on Semiconductor Heterostructures. (1986) (0)
- InAs-AISb Quantum Wells Having Both High and High Concentrations (1993) (0)
- Microwave interactions in bulk semiconductors: A survey (1960) (0)
- Epitaxial Growth of GaAs-AIGaAs Quantum Wire Superlattices on Vicinal Surfaces. (1991) (0)
- The Effect of Band Filling on the Width of the Minigaps on Long-Period One-Dimensional Superlattices. (1974) (0)
- How the Double-Heterostructure Laser Idea got started (2007) (0)
- A Self-Aligned AlGaAs/GaAs Heterostructure Bipolar Transistor With Non Alloyed Graded-Gap Ohmic Contacts To The Base And Emitter (1987) (0)
- Semiconducting and Superconducting Physics and Devices in theInAs/AlSb Materials System (1999) (0)
- The Peierls Instability Including Non-Linear Screening. (1975) (0)
- Research on GaSb/AlSb Multi-Quantum Well Superlattices. (1985) (0)
- The quality of the mechanical properties of laser welded points between commercial pure titanium rings , for creating a net for surgical applications (2015) (0)
- Development of a Planar Heterojunction Bipolar Transistor for Very High Speed Logic. (1986) (0)
- Nanostructures for Enhanced Electron/Hole Conversion (2009) (0)
- Statistical Mechanics and Thermodynamics (2019) (0)
- Spin phenomena in intersubband transitions (1996) (0)
- Molecular beam epitaxial growth and electronic properties of GaP-on-Si (211) heterostructures, and of related systems (1990) (0)
- Suppression of Defect Propagation in Heteroepitaxial Structures by Strained Layer Superlattices (1989) (0)
- WKB connection rules from the harmonic oscillator (1975) (0)
- Molecular-Beam Epitaxial Growth and Device Potential of Polar/Nonpolar Semiconductor Heterostructures. (1985) (0)
- The double heterostructure (2012) (0)
- Nucleation and propagation of accumulation and depletion layers in the Gunn effect (1965) (0)
- TEMPERATURE AND MAGNETIC FIELD INDUCED BANDSTRUCTURE REVERSAL IN GaSb/AlSb QUANTUM WELLS (1987) (0)
- Intersubband absorption in Nb-clad InAs quantum wells (2000) (0)
- Plenary session (2011) (0)
- Order-Disorder Phase Transition of the Iodine Sublattice in Tetrathiofulvalene Iodide (n Approx.=0.7) in a Strong Electric Field, (1981) (0)
- Evolution Of The Band Gaps And Band Edges Of Quaternary Ga1−yInyAsxSb1−x/InAs Alloys As A Function of Composition (2005) (0)
- ↵ ect of dopamine and its agonist pramipexole on oligodendrocytes in culture and in the cuprizone mouse model (2014) (0)
- News in Brief: Clarification (2005) (0)
- Normal-incidence quantum-well infrared photodetectors utilizing ellipsoidal valley intersubband transitions in n-type GaSb-AlSb multiquantum wells (1993) (0)
- Herbert Kroemer on Nanotechnology: Speculations about future directions (2008) (0)
- Theory of Hall effect isolators for tunnel diode amplifiers (1963) (0)
- More on Bell Labs (1977) (0)
- A possible tunnel diode power oscillator using a Hall effect isolator (1965) (0)
- Nonlinear optical absorption in intrinsic stark effect superlattices (1991) (0)
- AC Non-equilibrium Supercurrents: The Unusually Strong Half-integer Shapiro Step in Mesoscopic SNS Junctions (1998) (0)
- Structural Properties of InAs/AlSb Superlattices (1995) (0)
- Impact Ionization by Subterahertz illumination in InAs quantum wells (1996) (0)
- 1.55 /spl mu/m room temperature electrically pumped operation of fully lattice-matched Sb-based vertical cavity surface emitting lasers (1999) (0)
- uctance in InAs-A1Sb Quantum Well eterostructure Fie d-Effect Transistors (1995) (0)
- P-N junctions in Mg 2 Ge (1964) (0)
- UNIVERSITY of CALIFORNIA Santa Barbara Nonequilibrium dynamics in mesoscopic superconductor-semiconductor-superconductor junctions A dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy in Physics (1999) (0)
- Density Dependent Transport in Quantum Well Coupled Josephson Junctions (2000) (0)
- News in Brief: Correction (2005) (0)
- 1.55 /spl mu/m, double-intracavity contacted, InP-lattice-matched VCSELs (2000) (0)
- Infrared spectroscopy of lateral-density-modulated 2DES in InAs/AlSb quantum wells (1994) (0)
- Defects in GaP film grown on Si(211) by molecular beam epitaxy (1986) (0)
- Evolution of the bandgap and band-edge energies of the lattice-matched Ga In As Sb (2015) (0)
- New Kinds of Quantum Wells (1990) (0)
- Theory of Heterojunction Discontinuities. (1976) (0)
- Optical characterization of ligand-induced staining of olfactory receptor neurons in Xenopus laevis (2015) (0)
- SUPPRESSIO OF DEFECT PROPAGATION IN HETEROEPITAXIAL STRUCTURES BY STRAINED LAYER SUPERLATTICES (2013) (0)
- All that Glitters isn’t Silicon (1996) (0)
- Improved Charge Control Performance in InAs/AlSb-Based Heterostructure Field-Effect Transistors (1994) (0)
- Band Edge Energies and Band Gaps of Quaternary GaInAsSb Alloys (2007) (0)
- Biography of Herbert Kroemer (2008) (0)
- SUBSTRUCTURED P-N TUNNEL JUNCTION FOR MICROWAVE GENERATION. (1964) (0)
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