Herbert Zirath
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Engineering
Herbert Zirath's Degrees
- PhD Electrical Engineering Chalmers University of Technology
- Masters Electrical Engineering Chalmers University of Technology
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(Suggest an Edit or Addition)Herbert Zirath's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Science and technology roadmap for graphene, related two-dimensional crystals, and hybrid systems. (2015) (2112)
- A new empirical nonlinear model for HEMT and MESFET devices (1992) (484)
- The Odin satellite - I. Radiometer design and test (2003) (171)
- Design of Varactor-Based Tunable Matching Networks for Dynamic Load Modulation of High Power Amplifiers (2009) (159)
- Accurate small-signal modeling of HFET's for millimeter-wave applications (1996) (157)
- A comprehensive analysis of IMD behavior in RF CMOS power amplifiers (2004) (147)
- Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model (2002) (139)
- Highly integrated 60 GHz transmitter and receiver MMICs in a GaAs pHEMT technology (2005) (136)
- Design of a Highly Efficient 2–4-GHz Octave Bandwidth GaN-HEMT Power Amplifier (2010) (135)
- Cryogenic wide-band ultra-low-noise IF amplifiers operating at ultra-low DC power (2003) (133)
- An empirical-table based FET model (1999) (130)
- Investigation on 3-D-Printing Technologies for Millimeter- Wave and Terahertz Applications (2017) (130)
- Metallic 3-D Printed Antennas for Millimeter- and Submillimeter Wave Applications (2016) (120)
- High gain active microstrip antenna for 60-GHz WLAN/WPAN applications (2006) (113)
- On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs (2005) (102)
- Metallic 3-D Printed Rectangular Waveguides for Millimeter-Wave Applications (2016) (101)
- I/Q Imbalance Compensation Using a Nonlinear Modeling Approach (2009) (100)
- Calculation of the Performance of Communication Systems From Measured Oscillator Phase Noise (2013) (96)
- Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs (2006) (95)
- Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz (2012) (94)
- 60 GHz Single-Chip Front-End MMICs and Systems for Multi-Gb/s Wireless Communication (2007) (92)
- A $D$-Band 48-Gbit/s 64-QAM/QPSK Direct-Conversion I/Q Transceiver Chipset (2016) (90)
- Single-Chip 220-GHz Active Heterodyne Receiver and Transmitter MMICs With On-Chip Integrated Antenna (2011) (86)
- Development of 60-GHz front-end circuits for a high-data-rate communication system (2004) (82)
- Room-temperature and 50 GHz operation of a functional nanomaterial (2001) (78)
- 90 nm CMOS MMIC amplifier (2004) (75)
- $W$ -Band Low-Profile Monopulse Slot Array Antenna Based on Gap Waveguide Corporate-Feed Network (2018) (69)
- Fabrication and characterization of field-plated buried-gate SiC MESFETs (2006) (68)
- Operation of InGaAs/InP-Based Ballistic Rectifiers at Room Temperature and Frequencies up to 50 GHz (2001) (66)
- Validation of a nonlinear transistor model by power spectrum characteristics of HEMT's and MESFET's (1995) (66)
- Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers (2006) (64)
- A 220 GHz Single-Chip Receiver MMIC With Integrated Antenna (2008) (63)
- 3D printed iris bandpass filters for millimetre-wave applications (2015) (61)
- Fully integrated 60-GHz single-ended resistive mixer in 90-nm CMOS technology (2006) (60)
- Single-Chip Frequency Multiplier Chains for Millimeter-Wave Signal Generation (2009) (59)
- L-band LDMOS power amplifiers based on an inverse class-F architecture (2005) (57)
- InP DHBT Distributed Amplifiers With Up to 235-GHz Bandwidth (2015) (55)
- Balanced Colpitt oscillator MMICs designed for ultra-low phase noise (2005) (52)
- High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material (2005) (52)
- High-Efficiency LDMOS Power-Amplifier Design at 1 GHz Using an Optimized Transistor Model (2009) (52)
- Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs (2007) (48)
- Lumped-element quadrature power splitters using mixed right/left-handed transmission lines (2005) (47)
- Integration of a 140 GHz Packaged LTCC Grid Array Antenna With an InP Detector (2015) (45)
- 1 W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOS transistor (2002) (44)
- A new empirical nonlinear model for HEMT-devices (1992) (44)
- A Metallic 3-D Printed E-Band Radio Front End (2016) (44)
- Implementation Challenges and Opportunities in Beyond-5G and 6G Communication (2021) (43)
- Experimental Investigation of the Accuracy of an Ultrawideband Time-Domain Microwave-Tomographic System (2011) (42)
- A subharmonically pumped resistive dual-HEMT-mixer (1991) (42)
- Characteristics of Schottky diodes with microcluster interface (1983) (42)
- High-Gain Graphene Transistors with a Thin AlOx Top-Gate Oxide (2017) (40)
- Accuracy Evaluation of Ultrawideband Time Domain Systems for Microwave Imaging (2011) (39)
- An LDMOS VHF class E power amplifier using a high Q novel variable inductor (1999) (39)
- 40 and 60 GHz frequency doublers in 90-nm CMOS (2004) (38)
- High Efficiency LDMOS Current Mode Class-D Power amplifier at 1 GHz (2006) (38)
- A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications (2011) (38)
- Development of a Time Domain Microwave System for Medical Diagnostics (2014) (37)
- 4H-silicon carbide Schottky barrier diodes for microwave applications (2003) (37)
- Attempt of the metallic 3D printing technology for millimeter-wave antenna implementations (2015) (36)
- Design of Low Phase-Noise Oscillators and Wideband VCOs in InGaP HBT Technology (2012) (35)
- High-purity 60-GHz-band single-chip x 8 multipliers in pHEMT and mHEMT technology (2006) (35)
- High-purity 60-GHz-band single-chip /spl times/8 multipliers in pHEMT and mHEMT technology (2006) (34)
- Broad-Band Noise Mechanisms and Noise Measurements of Metal Semiconductor Junctions (1986) (34)
- A General Statistical Equivalent-Circuit-Based De-Embedding Procedure for High-Frequency Measurements (2008) (34)
- Design and Characterization of $H$-Band (220–325 $~$GHz) Amplifiers in a 250-nm InP DHBT Technology (2014) (34)
- An SiC MESFET-Based MMIC Process (2006) (34)
- High field effect mobility in Si face 4H-SiC MOSFET transistors (2004) (33)
- High output power, broadband 28-56 GHz MMIC frequency doubler (2000) (32)
- An Energy Efficient 56 Gbps PAM-4 VCSEL Transmitter Enabled by a 100 Gbps Driver in 0.25 μm InP DHBT Technology (2016) (32)
- A broadband differential cascode power amplifier in 45 nm CMOS for high-speed 60 GHz system-on-chip (2010) (31)
- Compact Integrated Full-Duplex Gap Waveguide-Based Radio Front End For Multi-Gbit/s Point-to-Point Backhaul Links at E-Band (2019) (31)
- On the performance of low-noise low-DC-power-consumption cryogenic amplifiers (2002) (30)
- Temperature-Variable Characteristics and Noise in Metal--Semiconductor Junctions (1986) (29)
- Novel Air-Filled Waveguide Transmission Line Based on Multilayer Thin Metal Plates (2019) (28)
- A W-band MMIC Resistive Mixer Based on Epitaxial Graphene FET (2017) (28)
- High‐frequency noise and current‐voltage characteristics of mm‐wave platinum n–n+–GaAs Schottky barrier diodes (1986) (27)
- Estimation of Phase Noise for QPSK Modulation over AWGN Channels (2003) (27)
- C-band linear resistive wide bandgap FET mixers (2003) (27)
- Impact of pad and gate parasitics on small-signal and noise modeling of 0.35 /spl mu/m gate length MOS transistors (2002) (27)
- Graphene FET Gigabit ON–OFF Keying Demodulator at 96 GHz (2016) (27)
- A novel single device balanced resistive HEMT mixer (1995) (26)
- Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication (2017) (26)
- An 1 GHz class E LDMOS power amplifier (2003) (26)
- A 220 GHz (G-Band) Microstrip MMIC Single-Ended Resistive Mixer (2008) (25)
- An 1 GHz Class E LDMOS Power Amplifier (2003) (25)
- Accurate Phase-Noise Prediction for a Balanced Colpitts GaN HEMT MMIC Oscillator (2013) (25)
- A millimeterwave subharmonically pumped resistive mixer based on a heterostructure field effect transistor technology (1992) (24)
- Does LO Noise Floor Limit Performance in Multi-Gigabit Millimeter-Wave Communication? (2017) (24)
- A $D$ -Band Packaged Antenna on Organic Substrate With High Fault Tolerance for Mass Production (2016) (24)
- Influence of White LO Noise on Wideband Communication (2018) (23)
- A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC (2013) (23)
- Design of highly efficient, high output power, L-band class D.1 RF power amplifiers using GaN MESFET devices (2007) (23)
- Growth of Fe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVD (2006) (23)
- Characterization of switched mode LDMOS and GaN power amplifiers for optimal use in polar transmitter architectures (2008) (23)
- A High Power-Efficiency D-Band Frequency Tripler MMIC With Gain Up to 7 dB (2014) (23)
- A Highly Integrated Chipset for 40 Gbps Wireless D-Band Communication Based on a 250 nm InP DHBT Technology (2014) (23)
- Low Phase Noise GaN HEMT Oscillators With Excellent Figures of Merit (2014) (23)
- Millimeter Wave E-Plane Transition From Waveguide to Microstrip Line With Large Substrate Size Related to MMIC Integration (2016) (22)
- An Image Reject Mixer for High-Speed E-Band (71-76, 81-86 GHz) Wireless Communication (2009) (22)
- A 40 GHz integrated quasi optical slot HFET mixer (1994) (22)
- 340 GHz Integrated Receiver in 250 nm InP DHBT Technology (2012) (22)
- Analysis and Design of Millimeter-Wave FET-Based Image Reject Mixers (2007) (22)
- Analog MMICs for millimeter-wave applications based on a commercial 0.14-/spl mu/m pHEMT technology (2001) (21)
- pHEMT and mHEMT ultra wideband millimeterwave balanced resistive mixers (2004) (21)
- Molecular beam epitaxy growth and characterization of InxGa1 − xAs (0.57 ⩽ x ⩽ 1) on GaAs using InAlAs graded buffer (1997) (21)
- Low-Resistance Si/Ti/Al/Ni/Au Multilayer Ohmic Contact to Undoped AlGaN/GaN Heterostructures (2004) (21)
- A balanced millimeter wave doubler based on pseudomorphic HEMTs (1992) (21)
- Evaluation of a GaN HEMT transistor for load- and supply-modulation applications using intrinsic waveform measurements (2010) (20)
- A linear 70-95 GHz differential IQ modulator for E-band wireless communication (2010) (20)
- DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx (2007) (20)
- CMOS large signal model for CAD (2003) (20)
- A 45-dB variable-gain low-noise MMIC amplifier (2006) (19)
- Accurate Modeling of GaN HEMT RF Behavior Using an Effective Trapping Potential (2018) (19)
- A balanced W-band HFET doubler (1993) (19)
- A high voltage mm-wave stacked HEMT power amplifier in 0.1 µm InGaAs technology (2015) (19)
- Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0001) layers (2015) (19)
- High Channel Mobility 4H-SiC MOSFETs (2006) (18)
- Q-, V-, and W-band power amplifiers utilizing coupled lines for impedance matching (2008) (18)
- An F-band resistive mixer based on heterostructure field effect transistor technology (1993) (18)
- A Load Modulated High Efficiency Power Amplifier (2006) (18)
- InP DHBT wideband amplifiers with up to 235 GHz bandwidth (2014) (18)
- A new extraction method for the two-parameter FET temperature noise model (1998) (18)
- InP DHBT Amplifier Modules Operating Between 150–300 GHz Using Membrane Technology (2015) (17)
- MMIC-Based Components for MM-Wave Instrumentation (2010) (17)
- A highly efficient 3.5 GHz inverse class-F GaN HEMT power amplifier (2010) (17)
- 60 GHz Broadband MS-to-CPW Hot-Via Flip Chip Interconnects (2007) (17)
- Hot-electron noise generation in gallium-arsenide Schottky-barrier diodes (1983) (17)
- Single-Chip 60 GHz Transmitter and Receiver MMICs in a GaAs mHEMT Technology (2006) (17)
- Hydrodynamic Simulations of Unitraveling-Carrier Photodiodes (2007) (17)
- Evaluation of an InAlN/AlN/GaN HEMT with Ta-based ohmic contacts and PECVD SiN passivation (2014) (17)
- Fully Integrated D-Band Direct Carrier Quadrature (I/Q) Modulator and Demodulator Circuits in InP DHBT Technology (2015) (17)
- Spectrum Efficient D-band Communication Link for Real-time Multi-gigabit Wireless Transmission (2018) (16)
- A Millimeter Wave Quantum Well Diode Oscillator (1988) (16)
- Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier (2019) (16)
- A W-band subharmonically pumped resistive mixer based on pseudomorphic heterostructure field effect transistor technology (1993) (16)
- 4-8 GHz Low Noise Amplifiers using metamorphic HEMT Technology (2006) (16)
- CMOS MMICs for microwave and millimeter wave applications (2004) (16)
- 60 GHz MMIC double balanced Gilbert mixer in mHEMT technology with integrated RF, LO and IF baluns (2006) (16)
- Novel Low-Loss Millimeter-Wave Transition From Waveguide-to-Microstrip Line Suitable for MMIC Integration and Packaging (2017) (16)
- Resistive SiC-MESFET mixer (2002) (15)
- Ultra-broadband common collector-cascode 4-cell distributed amplifier in 250nm InP HBT technology with over 200 GHz bandwidth (2017) (15)
- Broadband $Gm$ -Boosted Differential HBT Doublers With Transformer Balun (2011) (15)
- Monolithically Integrated 200-GHz Double-Slot Antenna and Resistive Mixers in a GaAs-mHEMT MMIC Process (2011) (15)
- Intermodulation distortion behavior in LDMOS transistor amplifiers (2002) (15)
- New empirical nonlinear model for HEMT devices (1992) (15)
- A HFET millimeterwave resistive mixer (1992) (15)
- Phase-Noise Analysis of an X-Band Ultra-Low Phase-Noise GaN HEMT Based Cavity Oscillator (2015) (14)
- A 60 GHz MMIC pHEMT image reject mixer with integrated ultra wideband IF hybrid and 30 dB of image rejection ratio (2005) (14)
- Silicon Taper Based $D$ -Band Chip to Waveguide Interconnect for Millimeter-Wave Systems (2017) (14)
- A monolithically integrated F-band resistive InAlAs/InGaAs/InP HFET mixer (1995) (14)
- A compact V-band planar wideband bandpass filter based on Liquid Crystal Polymer substrates (2008) (14)
- Toward Industrial Exploitation of THz Frequencies: Integration of SiGe MMICs in Silicon-Micromachined Waveguide Systems (2019) (14)
- A Novel FPGA-Based 2.5Gbps D-QPSK Modem for High Capacity Microwave Radios (2010) (14)
- Time alignment in a dynamic load modulation transmitter architecture (2009) (13)
- Low phase-noise balanced Colpitt InGaP-GaAs HBT VCOs with wide frequency tuning range and small VCO-gain variation (2007) (13)
- A MMIC GaN HEMT Voltage-Controlled-Oscillator with High Tuning Linearity and Low Phase Noise (2015) (13)
- A 100–145 GHz area-efficient power amplifier in a 130 nm SiGe technology (2017) (13)
- An Efficiency Optimized Controlling Scheme for Dynamic Load Modulation of Power Amplifiers (2008) (13)
- Transmission electron microscopy assessment of the Si enhancement of Ti/Al/Ni/Au Ohmic contacts to undoped AlGaN/GaN heterostructures (2006) (13)
- A new FET frequency multiplier (1998) (13)
- A Cryogenic Millimeter-wave Schottky-diode Mixer (1983) (13)
- Integrated front-ends up to 200 GHz (2011) (13)
- Design, Fabrication, and Characterization of Novel Vertical Coaxial Transitions for Flip-Chip Interconnects (2009) (13)
- Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs (2008) (13)
- 90-nm CMOS for microwave power applications (2003) (12)
- System Considerations for Hardware Parameters in a 60 GHz WLAN (2000) (12)
- Optimization of SiC MESFET for High Power and High Frequency Applications (2011) (12)
- A high efficient LDMOS power amplifier based on an inverse class F architecture (2004) (12)
- A general parameter extraction method for transistor noise models with correlation (1999) (12)
- Development of 60 GHz front end circuits for high data rate communication systems in Sweden and Europe (2003) (12)
- A Resistive HEMT-Mixer with Very Low LO-Power Requirements and Low Intermodulation (1991) (12)
- A Low Noise Integrated 0.3-16 GHz Differential Amplifier for Balanced Ultra Wideband Antennas (2010) (12)
- An E-Band(71–76, 81–86 GHz) balanced frequency tripler for high-speed communications (2009) (12)
- System implications in designing a 60 GHz WLAN RF front end (2001) (12)
- A high spectral purity GaAs PHEMT MMIC balanced frequency quadrupler (2003) (12)
- An X-Band Low Phase Noise AlGaN-GaN-HEMT MMIC Push-Push Oscillator (2011) (12)
- Cryogenic 0.5–13 GHz low noise amplifier with 3 K mid-band noise temperature (2012) (12)
- High gain graphene field effect transistors for wideband amplifiers (2014) (11)
- InP HEMT-based, cryogenic, wideband LNAs for 4-8 GHz operating at very low DC-power (2002) (11)
- A direct conversion quadrature transmitter with digital interface in 45 nm CMOS for high-speed 60 GHz communications (2011) (11)
- Integrated receivers up to 220 GHz utilizing GaAs-mHEMT technology (2009) (11)
- A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs (2018) (11)
- Fabrication and Characterization of Reactively Sputtered TaN Thin-Film Resistors for Millimeter Wave Applications (2004) (11)
- Investigation of the Scalability of 4H-SiC MESFETs for High Frequency Applications (2003) (11)
- Validation of a nonlinear HEMT model by power spectrum characteristics (1994) (11)
- mm-Wave noise modeling in advanced SiGe and InP HBTs (2015) (11)
- An FPGA-based 5 Gbit/s D-QPSK modem for E-band point-to-point radios (2011) (11)
- An integrated millimeterwave BCB patch antenna HEMT receiver (1994) (11)
- Noise Measurements and Noise Mechanisms in Microwave Mixer Diodes (1984) (11)
- 8-PSK Upconverting Transmitter Using $E$ -Band Frequency Sextupler (2018) (11)
- Design, Fabrication, and Reliability of Low-Cost Flip-Chip-On-Board Package for Commercial Applications up to 50 GHz (2012) (11)
- A QFN packaged grid array antenna in low dielectric constant LTCC for D-band applications (2016) (11)
- An $E$ -Band Analog Predistorter and Power Amplifier MMIC Chipset (2018) (11)
- CMOS Large Signal and RF Noise Model for CAD (2006) (10)
- Microwave silicon carbide Schottky diodes (2001) (10)
- The influence of the gate leakage current and the gate resistance on the noise and gain performances of 90-nm CMOS for micro- and millimeter-wave frequencies (2004) (10)
- Experimental Demonstration of Spectrally Efficient Frequency Division Multiplexing Transmissions at E-Band (2019) (10)
- A W- and G-band MMIC source using InP HBT technology (2012) (10)
- 10 Gbps 16QAM transmission over a 70/80 GHz (E-band) radio test-bed (2012) (10)
- A x2 coupled Colpitt VCO with ultra low phase noise (2004) (10)
- A Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer Layers (2001) (10)
- Design and characterisation of singly balanced silicon carbide Schottky diode high-level mixer (2001) (10)
- Suppression of Parasitic Substrate Modes in Multilayer Integrated Circuits (2015) (10)
- A Compact Cascode Power Amplifier in 45-nm CMOS for 60-GHz Wireless Systems (2009) (10)
- Single-crystal metal-semiconductor microjunctions prepared by molecular beam epitaxy (1982) (10)
- A 110-to-147 GHz Frequency Sixtupler in a 130 nm Sige Bicmos Technology (2018) (9)
- W-Band Graphene-Based Six-Port Receiver (2018) (9)
- 140-220 GHz imaging front-end based on 250nm InP/InGaAs/InP DHBT process (2013) (9)
- Low Power Single-Ended Active Frequency Doubler for a 60 GHz-Band Application (2002) (9)
- Influence of the calibration kit on the estimation of parasitic effects in HEMT devices at microwave frequencies (2002) (9)
- Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies (2015) (9)
- A 110–170-GHz Multi-Mode Transconductance Mixer in 250-nm InP DHBT Technology (2015) (9)
- A D-Band Keyable High Efficiency Frequency Quadrupler (2014) (9)
- Cryogenic 2-4 GHz ultra low noise amplifier (2004) (9)
- A balanced InGaP-GaAs Colpitt-VCO MMIC with ultra-low phase noise (2004) (9)
- A direct carrier I/Q modulator for high-speed communication at D-band using 130nm SiGe BiCMOS technology (2017) (8)
- A Hardware Efficient Implementation of a Digital Baseband Receiver for High-Capacity Millimeter-Wave Radios (2015) (8)
- High frequency graphene transistors: can a beauty become a cash cow? (2015) (8)
- Fabrication, Characterization, and Modeling of SiC MESFETs (2000) (8)
- A D-Band Frequency Sixtupler MMIC With Very Low DC Power Consumption (2016) (8)
- A single-chip 53 GHz radiometer front-end MMIC for geostationary atmospheric measurements (2008) (8)
- DC and RF performance of 0.15/spl mu/m gate length In/sub 0.70/Al/sub 0.30/As/ln/sub 0.80/Ga/sub 0.20/As HFETs on GaAs substrate (1995) (8)
- A $V$ -Band Stacked HEMT Power Amplifier With 25-dBm Saturated Output Power in 0.1- $\mu \text{m}$ InGaAs Technology (2016) (8)
- A non-galvanic D-band MMIC-to-waveguide transition using eWLB packaging technology (2017) (8)
- An Empirical High-Frequency Large-Signal Model for High-Voltage LDMOS Transistors (1998) (8)
- Differential common base TIA with 56 dB Ohm gain and 45 GHz bandwidth in 130 nm SiGe (2017) (8)
- H-band MMIC amplifiers in 250 nm InP DHBT (2012) (8)
- On the performance of different HEMT cryogenic mixers (1997) (8)
- A G-band (140 - 220 GHz) microstrip MMIC mixer operating in both resistive and drain-pumped mode (2008) (8)
- Accurate Determination of the Series Resistance of mm-Wave Schottky-Diodes (1985) (8)
- Gm-boosted balanced Colpitts compared to conventional balanced Colpitts and cross-coupled VCOs in InGaP HBT technology (2010) (8)
- A 60 GHz MMIC dual-quadrature mixer in pHEMT technology for ultra wideband IF signals and high LO to RF isolation (2005) (8)
- Design and Fabrication of 4H-SiC RF MOSFETs (2007) (8)
- Investigation of device low frequency noise in 28 GHz MMIC VCO (2000) (8)
- Design and Fabrication of 0/1-Level RF-Via Interconnect for RF-MEMS Packaging Applications (2010) (8)
- Characterization of SiC MESFETs on Conducting Substrates (2000) (7)
- A 14 Gbps On-/Off- Keying Modulator in GaAs HBT Technology (2012) (7)
- A Synchronous Baseband Receiver for High-Data-Rate Millimeter-Wave Communication Systems (2019) (7)
- A high purity 60 GHz-band single chip X8 multiplier with low phase noise (2005) (7)
- A low noise 2-20 GHz feedback MMIC-amplifier (2000) (7)
- Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition (2011) (7)
- Broadband 7 GHz VCO in mHEMT technology (2005) (7)
- Characteristics of Millimeter-Wave Schottky Diodes with Microcluster Interface (1983) (7)
- Transformer-Based Broadband High-Linearity HBT ${ Gm}$-Boosted Transconductance Mixers (2014) (7)
- Power Characteristics of High Voltage LDMOS Transistors (2000) (7)
- Design and Performance Evaluation of a Time Domain Microwave Imaging System (2013) (7)
- A 100–140 GHz SiGe-BiCMOS sub-harmonic down-converter mixer (2017) (7)
- Performance Evaluation of a Time-Domain Microwave System for Medical Diagnostics (2019) (7)
- Initial growth of GaN on α-Al2O3(0001) by molecular beam epitaxy (2002) (7)
- A millimeter wave monolithic VCO with an integrated HEMT as a varactor (2001) (7)
- An LC VCO for High Power Millimeter-Wave Signal Generation (2013) (7)
- Temperature variable noise and electrical characteristics of Au-Ga-As Schottky barrier millimeter-wave mixer diodes (1988) (7)
- Nongalvanic Generic Packaging Solution Demonstrated in a Fully Integrated D-Band Receiver (2020) (7)
- Design of Flip-Chip Interconnect Using Epoxy-Based Underfill Up to $V$ -Band Frequencies With Excellent Reliability (2010) (7)
- Comparison between Si-LDMOS and GaN-based microwave power transistors (2002) (7)
- Design and Analysis of a Wideband Gilbert Cell VGA in 0.25- $\mu {\rm m}$ InP DHBT Technology With DC-40-GHz Frequency Response (2017) (7)
- Statistical estimation of small-signal FET model parameters and their covariance (2004) (7)
- 60 GHz broadband 0=1-level RF-via interconnect for RF-MEMS packaging (2007) (7)
- High-power-density 4H-SiC RF MOSFETs (2006) (6)
- On the performance of low DC power consumption cryogenic amplifiers (2000) (6)
- Noise in Microwave and Millimeter-Wave Pt-GaAs Schottky Diodes (1984) (6)
- An active millimeter wave MMIC frequency doubler with high spectral purity and low power consumption (1999) (6)
- Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy (2005) (6)
- Influence of Large-Aspect-Ratio Surface Roughness on Electrical Characteristics of AlGaN/AlN/GaN HFETs (2012) (6)
- An NLOS-capable 60 GHz MIMO demonstrator: System concept & performance (2011) (6)
- Integration of components in a 50-nm pseudomorphic In0.65Ga0.35As-In0.40Al0.60As-InP HEMT MMIC technology (2006) (6)
- Demonstration of +100-GHz Interconnects in eWLB Packaging Technology (2019) (6)
- MMIC-based nonlinear circuits for millimeter wave applications with low power dissipation (2001) (6)
- Microwave performance of a Ga0.20In0.80P/Ga0.47In0.53As/InP HFET grown with MOVPE (1995) (6)
- Compact Integration of Sub-Harmonic Resistive Mixer with Differential Double Slot Antenna in G-Band Using 50nm InP-HEMT MMIC Process (2012) (6)
- A 115–155 GHz quadrature up-converting MMIC mixer in InP DHBT technology (2013) (6)
- A new mixer for sensor applications (1998) (6)
- A balanced FET FMCW radar transceiver with improved AM noise performance (2002) (6)
- A 140 GHz Transmitter with an Integrated Chip-to-Waveguide Transition Using 130nm SiGe BiCMOS Process (2018) (6)
- InP HEMTs and HBVs for Low Noise and Ultra-High Speed:Device and Circuit Research at Chalmers University of Technology (2003) (6)
- A Cost-effective D-band Multi-layer Rectangular Waveguide Transmission Line Based on Glide-Symmetric EBG Structure (2018) (5)
- A Fundamental Upconverting Gilbert Mixer for 100 GHz Wireless Applications (2010) (5)
- A millimeterwave AllnAs-GaInAs HFET-based subharmonically pumped mixer (1995) (5)
- A LO-rejecting balanced upconverter for communication systems (1996) (5)
- OFDM Radar Range Accuracy Enhancement Using Fractional Fourier Transformation and Phase Analysis Techniques (2020) (5)
- Accuracy evaluation of time domain measurement systems for microwave tomography (2009) (5)
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- A method to lower VCO phase noise by using HBT darlington pair (2012) (5)
- A broadband 60-to-120 GHz single-chip MMIC multiplier chain (2009) (5)
- RF-MEMS Tuned GaN HEMT based Cavity Oscillator for X-band (2017) (5)
- High gain active microstrip antenna for 60 GHz WLAN (2005) (5)
- Single-Chip 24-GHz Synthesizer for a Radar Application (2006) (5)
- Enhanced Mobility in InAlN/AlN/GaN HEMTs Using a GaN Interlayer (2019) (5)
- Flip chip assembly of a 40-60 GHz GaAs microstrip amplifier (2004) (5)
- A High-Speed Power Detector for $D$-Band Communication (2014) (5)
- A new millimeter-wave MMIC mixer for sensor applications (2000) (5)
- Design, processing and characterization of delta-doped channel AlGaAs/InGaAs/GaAs HFETs (2000) (5)
- CMOS devices and circuits for microwave and millimetre wave applications (2005) (5)
- Analog MMICs for millimeterwave applications based on a commercial 0.14 /spl mu/m PHEMT technology (2000) (5)
- A DIRECT EXTRACTION FORMULA FOR THE FET TEMPERATURE NOISE MODEL (1997) (5)
- Dual-input nonlinear modeling for I/Q modulator distortion compensation (2009) (5)
- 24 GHz InGaP-GaAs HBT push-push VCO with broadband tuning range (2009) (5)
- Multi-functional D-band I/Q modulator/demodulator MMICs in SiGe BiCMOS technology (2018) (5)
- A +14.2 dBm, 90–140 GHz Wideband Frequency Tripler in 250-nm InP DHBT Technology (2018) (5)
- High Frequency Measurements and Simulations of SiC MESFETs up to 250°C (2004) (5)
- Regenerative GaAs MMIC Frequency Dividers for 28 and 14 GHz (2000) (5)
- Cryogenic low noise amplifiers in an InP HEMT MMIC process (2015) (5)
- A room temperature HEMT process for AlGaN/GaN heterostructure characterization (2009) (5)
- Multifunction low noise millimeterwave MMICs for remote sensing (2012) (5)
- Realization of Ultra Wideband Bandpass Filter based on LCP Substrate for Wireless Application (2007) (4)
- On the performance of different types of MESFET‐mixers (1991) (4)
- Balanced active frequency multipliers in D and G bands using 250nm InP DHBT technology (2017) (4)
- Evaluation of high efficiency PAs for use in supply- and load-modulation transmitters (2009) (4)
- Compensation of transmitter distortion using a nonlinear modeling approach (2008) (4)
- Compact Low-Loss Chip-to-Waveguide and Chip-to-Chip Packaging Concept Using EBG Structures (2021) (4)
- Linearity improvement using a modified derivative superposition method in cascaded stages amplifier (2012) (4)
- RF characterization of Josephson flux-flow transistors: design, modeling, and on-wafer measurement (1995) (4)
- Low-cost D-band Waveguide Transition on LCP Substrate (2018) (4)
- High linearity MMIC power amplifier design with controlled junction temperature (2014) (4)
- A 60 GHz compact single-chip sub-harmonically pumped receiver MMIC (2007) (4)
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- Waveguide Bandpass Filters for Millimeter-Wave Radiometers (2013) (4)
- CMOS devices and circuits for microwave and millimeter wave applications (2006) (4)
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- An E-band Compact Frequency Division Duplex Radio Front-end Based on Gap Waveguide Technology (2019) (4)
- A novel high purity, highly efficient, broadband MMIC frequency multiplier implemented in metamorphic HEMT technology (2006) (4)
- Design and characterization of a negative resistance Common Emitter InP Double Heterojunction Bipolar Transistor subcircuit for millimeter wave and submillimeter wave applications (2014) (4)
- An algebraic method for noise parameter analysis of temperature noise models (1998) (4)
- 20 GHz Power Amplifier Design in 130 nm CMOS (2008) (3)
- Microwave based diagnostics and treatment in practice (2013) (3)
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- Coded Pilot Assisted Baseband Receiver for High Data Rate Millimeter-Wave Communications (2020) (3)
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- Reduction of the Feedback Capacitance of HFETs by Changing Transistor Layout and Using Via Holes for Source Grounding (1994) (3)
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- SiC MESFET with a Double Gate Recess (2006) (2)
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- A novel gate process for InP based HEMTs with gate length from 0.06 to 0.2 /spl mu/m (1999) (2)
- InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance (2005) (2)
- Cryogenic 1.5-4.5 GHz ultra low noise amplifier (2003) (2)
- Modeling and design of Resistive Millimeterwave HEMT-Mixers (1997) (2)
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- Harmonic distortion analysis of InP HBTs with 650 GHz fmax for high data rate communication systems (2017) (2)
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- Tunable Equalizer for 64 GBPS Data Communication Systems in 130NM SiGe (2018) (2)
- Development of a 210 GHz near-field measurement radar system based on an antenna-integrated MMIC receiver front-end and an ultra-compact HBV transmitter source module (2008) (2)
- Experimental verification of phase noise robust spiral constellation for THz and optical communication (2017) (2)
- A high purity 60 GHz single chip X8 multiplier with low phase noise (2005) (2)
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- G-band Frequency Converters in 130-nm InP DHBT Technology (2021) (2)
- 4 W highly linear and reliable GaN power amplifier for C-band applications (2015) (2)
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- The influence of composition and unintentional doping on the two-dimensional electron gas density in AlGaN/GaN heterostructures (2004) (2)
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- EuMIC01 : Focussed Session: Integrated 60 GHz Circuits and Systems for High-speed Communication (2008) (0)
- Feasibility study concerning an active millimeterwave sensor. Project phase MMS2.1 (1994) (0)
- Material characterization and device performance of In0.7Al0.3As/InAs/In0.8Ga0.2As HFET structures fabricated on GaAs (1996) (0)
- Implementation of MSM-detectors in a commercial GaAs PHEMT process (2003) (0)
- Ultra wideband linear mixers for high datarate communication and remote sensing systems based on mHEMT, pHEMT, and CMOS MMIC technologies (2007) (0)
- A balanced InGaP-GaAs Colp ultra-low phase (2004) (0)
- Study of Cavity Resonances in Quasi-Optical Grid Amplifier with Hard-Walled Waveguide Section (2003) (0)
- Quantum behavior as well as room-temperature and 50 GHz operations of novel nonlinear devices and nanomaterials (2002) (0)
- Progress report on developing metamaterial EBG-based gap waveguide components and packaging solutions between 1 GHz and several 100 Ghz (2011) (0)
- A NEW MlLLlMETER-WAVE MMlC MlXER FOR SENSOR APPLlCATlONS (2000) (0)
- A compact ultra‐wideband bandpass filter with ultra‐fine conductor trace based on liquid crystal polymer substrates (2009) (0)
- Integrated microstrip array antenna and amplifier at 60 GHz (2005) (0)
- Microwave performance and reliability evaluation of MOCVD‐grown AlInAs/GaInAs/InP‐based HEMTs (1999) (0)
- Small-Signal Model and Microwave Noise Performance of the 0.35μm n and p Type MOSFETs, Scaling Down (2000) (0)
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What Schools Are Affiliated With Herbert Zirath?
Herbert Zirath is affiliated with the following schools: