Hermann Grimmeiss
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Swedish physicist
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Physics
Hermann Grimmeiss's Degrees
- PhD Physics Uppsala University
- Masters Physics Uppsala University
Why Is Hermann Grimmeiss Influential?
(Suggest an Edit or Addition)According to Wikipedia, Hermann Grimmeiss , is a German-Swedish physicist. He became the first professor of solid-state physics at Lund University in 1965, and he held his post until his retirement in 1996. He became an important part of the Department of Physics and focused his research on electrical and photoelectric studies of semiconductor defects.
Hermann Grimmeiss's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Complex nature of gold-related deep levels in silicon (1980) (196)
- Deep level transient spectroscopy evaluation of nonexponential transients in semiconductor alloys (1983) (175)
- High-resolution studies of sulfur- and selenium-related donor centers in silicon (1984) (174)
- Deep Level Impurities in Semiconductors (1977) (157)
- Spectral distribution of photoionization cross sections by photoconductivity measurements (1975) (114)
- Ultrathin SimGen strained layer superlattices-a step towards Si optoelectronics (1992) (113)
- Tellurium donors in silicon (1981) (91)
- Enhanced Band-Gap Luminescence in Strain-Symmetrized (Si) m (Ge) n Superlattices (1993) (86)
- Electrical and optical properties of deep levels in MOVPE grown GaAs (1981) (82)
- Deep sulfur‐related centers in silicon (1980) (73)
- Fundamentals of junction measurements in the study of deep energy levels in semiconductors (1981) (73)
- Photo-ionization of deep impurity levels in semiconductors with non-parabolic bands (1975) (69)
- Optical properties of gold acceptor and donor levels in silicon (1974) (66)
- Electronic properties of selenium‐doped silicon (1980) (64)
- Electrical properties of Fe in GaAs (1983) (62)
- Shallow acceptors and p‐type ZnSe (1979) (61)
- Electroluminescence at room temperature of a SinGem strained-layer superlattice (1993) (57)
- Low‐Temperature Luminescence of GaN (1970) (56)
- Thermal activation energy of the gold−acceptor level in silicon (1975) (53)
- p‐n Photovoltaic Effect in Cadmium Sulfide (1962) (51)
- Identification of deep centers in ZnSe (1977) (45)
- Alloying mechanisms in MOVPE GaAs1-xPx (1983) (41)
- Thermal and optical generation current in reverse‐biased gold‐doped silicon p+n junctions without the depletion approximation (1973) (41)
- Multivalley spin splitting of 1 s states for sulfur, selenium, and tellurium donors in silicon (1982) (40)
- Excited states at deep centers in Si:S and Si:Se (1981) (40)
- Dynamics of capture from free‐carrier tails in depletion regions and its consequences in junction experiments (1984) (40)
- Some optical properties of Cu in GaP (1973) (39)
- Capture from free‐carrier tails in the depletion region of junction barriers (1980) (39)
- Direct Evidence for Random-Alloy Splitting of Cu Levels in Ga As 1 − x P x (1984) (39)
- Electronic properties of native deep-level defects in liquid-phase epitaxial GaAs (1984) (36)
- Determination of optical ionization cross sections in GaP using charge storage and impurity photovoltaic effect (1971) (33)
- Electric and optical properties of the ’’Cu‐red’’ center in ZnSe (1979) (32)
- Photoionization cross sections in platinum‐doped silicon (1977) (31)
- Dislocation-related luminescence properties of silicon (1998) (30)
- Temperature dependence of the refractive index of AIAs and AIP (1971) (29)
- Investigations of Mn‐doped ZnSe by photocapacitance and photocurrent techniques (1976) (29)
- Thermal‐ and optical‐excitation processes in GaP : Cu (1978) (28)
- Efficiency of recombination radiation in GaP (1964) (27)
- Capture, emission and recombination at a deep level via an excited state (1980) (27)
- Metastable state of EL2 in theGaAs1−xPxalloy system (1984) (27)
- Charge‐Carrier Capture and Its Effect on Transition Capacitance in GaP–Cu Diodes (1969) (27)
- Analysis ofp−nLuminescence in Zn-Doped GaP (1961) (27)
- Silicon-germanium—a promise into the future? (1999) (25)
- Vibronic states of silicon-silicon dioxide interface traps (1989) (25)
- Photocapacitance studies of CdS:Cu (1981) (24)
- Some Properties of p‐n Junctions in GaP (1961) (23)
- Temperature dependence of the gold acceptor energy level in silicon (1974) (23)
- Characterization of silver‐related deep levels in silicon (1987) (22)
- Diffusion of tellurium dopant in silicon (1982) (22)
- Optical properties of sulfur‐doped silicon (1976) (22)
- Band-to-band transitions in strain-symmetrized, short-period Si/Ge superlattices (1992) (21)
- Optical investigations of Zn, Hg and Li doped GaN (1974) (21)
- Room‐temperature photoluminescence of GemSinGem structures (1995) (19)
- Properties of deep Cu levels in GaP (1978) (19)
- Chemical identification of deep energy levels in Si:Se (1980) (19)
- Sonoluminescence and acoustically driven optical phenomena in solids and solid–gas interfaces (1999) (16)
- Dislocation Related Electroluminescence at Room Temperature in Plastically Deformed Silicon (1995) (16)
- Light emitting diodes - How it started (2006) (15)
- A deep centre with excited states in MOVPE GaP grown under high phosphorus pressure (1984) (15)
- A steady‐state constant capacitance method for the characterization of deep energy levels in semiconductors (1980) (15)
- Photo- and electroluminescence in short-period Si/Ge superlattice structures (1994) (15)
- Line spectrum of the interstitial iron donor in silicon (1988) (15)
- Impurities in semiconductors (2004) (14)
- Photothermal investigations of magnesium-related donors in silicon (1986) (14)
- Low-Dimensional Structures in Semiconductors (1991) (14)
- Effects of stoichiometry on deep levels in MOVPE GaP (1988) (13)
- Evidence that the 0.635‐eV luminescence band in semi‐insulating GaAs is not EL2 related (1984) (13)
- Optical characterization of deep energy levels in semiconductors (1982) (13)
- Optical and thermal properties of Fe in GaP (1983) (13)
- Field-independence of thermal emission rate in Au-doped silicon (1972) (12)
- Photocapacitance measurements of the energy levels in ZnSe: Mn (1972) (12)
- p-n-junction photovoltaic effect in zinc-doped GaP (1962) (12)
- Electronic properties of iron-doped GaAs1-xPx (1985) (12)
- EPR identification of a trigonal FeIn defect in silicon (1989) (12)
- Simple method for determining photo-ionization cross sections (1970) (12)
- Correlation of electrical and optical properties of the vanadium-related C level in silicon (1997) (11)
- Deep energy levels in ZnSxSe1−x alloys (1984) (11)
- Optical properties of iron doped AlxGa1−xAs alloys (1984) (10)
- Identification of the Iron-Boron Line Spectrum in Silicon (1993) (10)
- Mid-gap level in SiGe alloys (1990) (10)
- Electrical and optical properties of molybdenum and tungsten related defects in silicon (1991) (9)
- LETTER TO THE EDITOR: The influence of manganese doping on the self-activated centre in ZnS (1988) (9)
- Neutral interstitial iron center in silicon studied by Zeeman spectroscopy (1998) (9)
- Optical study of diffusion limitation in MBE growth of SiGe quantum wells (1995) (9)
- Absorption studies of beryllium-doped silicon (1986) (9)
- Photoluminescence studies of relaxation processes in strained Si1−xGex/Si epilayers (1995) (8)
- Spectral dependence of photo-ionization cross sections in GaP:Cu, O (1971) (8)
- The Origin and Efficiency of Dislocation Luminescence in Si and its Possible Application in Optoelectronics (1999) (8)
- Deep level junction spectroscopy of II VI compounds (1982) (8)
- Electrical and optical characterization of niobium-related centres in silicon (1993) (8)
- Photoionization of electrons and holes at oxygen donors in gallium phosphide (1973) (8)
- Final-state effects in the excitation spectra of deep impurities in semiconductors (1980) (7)
- Photoelectronic properties of semiconductors. By Richard H. Bube, Cambridge University Press, Cambridge 1992, 318 pp., paperback, £ 17.95, ISBN 0-521-40681-1 (1993) (7)
- Electrical and optical properties of the neutral nickel acceptor in gallium phosphide (1984) (7)
- Configuration coordinate diagram for the E4 defect in electron‐irradiated GaP (1985) (7)
- Fourier photo‐admittance spectroscopy (1982) (7)
- Transient current measurements for the characterization of deep defects in semiconductors (1992) (7)
- Electronic Defect Characterization (1985) (6)
- Nickel Related Deep Levels in Germanium (1992) (6)
- Storage Effects in Photoconducting GaPCu (1968) (6)
- Copper deep acceptors in GaAs1-xPx alloy system (1985) (6)
- Temperature dependence of optical properties of the deep sulfur center in silicon (1996) (6)
- The iodine donor in ZnSxSe1−x alloys (1988) (6)
- Composition dependence and random alloy effects for Cu and Fe in the semiconductor alloy AlGaAs (1983) (6)
- Identification of hole transitions at the neutral interstitial manganese center in silicon (1989) (6)
- Optical studies on the electric field dependence of excited donor states in silicon (1988) (5)
- Hydrogen-like excited states of a deep donor in germanium (1985) (5)
- Acoustically pumped stimulated emission in GaAs/AlGaAs quantum wells (2003) (5)
- Electrical characterization of SiGe heterostructure bipolar transistors (1992) (5)
- Visible Light-Emitting Diodes - The Formative Years (2008) (5)
- Advances in Light emitting Materials (2008) (5)
- Optical and electrical characterization of Si/Ge superlattices (1992) (5)
- High-resolution absorption measurements in gold doped Si/Ge alloys (1991) (5)
- Electrical and optical properties of MOVPE grown GaAs1−xPx (1983) (5)
- Photoconductivity of AIN Single Crystals in the Extrinsic Energy Region (1975) (5)
- Origins of the Photovoltaic Effect in Vapor‐Deposited CdS Layers (1962) (5)
- High-Resolution Spectroscopy of Point Defects in Silicon (1989) (4)
- Low-dimensional structures in semiconductors : from basic physics to applications (1991) (4)
- Charge transfer state of novel molecular complex C26H18Te2·C60·CS2 detected in single crystals by photoluminescence and ESR (2000) (4)
- Identification of the neutral charge state of platinum in silicon (1988) (4)
- The localisation of donor electrons in multivalley split 1s states for group V and VI donors in silicon (1982) (4)
- Chalcogenides in Silicon (1982) (4)
- Photo-admittance spectroscopy (1983) (4)
- TSC measurements and their correlation with photocurrent techniques (1978) (4)
- Difficulties in Doping SiGe Alloys with Transition Metal Point Defects (1994) (4)
- Electron capture cross-section in copper doped CdS (1980) (4)
- Characterization of the valence band offset in p-Si/Si1−xGex/Si by space charge spectroscopy (1994) (4)
- Transition Metal Excited States in Silicon (1987) (4)
- ORGANOMETALLIC EPITAXIAL GROWTH OF GaAs1-xPx (1982) (4)
- Formation and Defect Structure of FeIn Pairs in Silicon (1991) (3)
- Special issue - Current trends in nanoscience - From materials to application - Proceedings of Symposium A, E-MRS spring meeting 2003 - June 10-13, 2003, Strasbourg, France - Preface (2003) (3)
- Persistent decrease of dark conductivity due to illumination in AlGaAs/GaAs modulation‐doped heterostructures (1993) (3)
- Deep Energy Levels in Semiconductors (1985) (3)
- Defect spectroscopy in semiconductors (1992) (3)
- Gold in silicon and other analogous donors and acceptors (1995) (3)
- The Mechanisms and Application of Dislocation Related Radiation for Silicon Based Light Sources (1995) (3)
- The incorporation of Cu in Cd In2S4 photoconductors (1961) (3)
- ERRATUM: Si1 - x - yGexCy: A New Material for Future Microelectronics? (1997) (3)
- Interband Photo- and Electroluminescence from Short-Period Si/Ge Superlattices (1994) (3)
- Deep level spectroscopy in semicounductors by optical excitation (1980) (3)
- Electrical field dependence of the emission properties of DX-related centres in AlGaAs (1994) (3)
- Optical anisotropy of SiGe superlattices (1996) (3)
- The excitation spectrum of the trigonal and the orthorhombic FeIn centres in silicon (1996) (3)
- Symmetries of Hydrogen-Associated Centers in Silicon (1991) (2)
- Transition-Metal Acceptor Pairs in Silicon (1992) (2)
- Electrical and optical properties of ruthenium‐related defects in silicon (1995) (2)
- The next twenty years (2003) (2)
- Electrical and Optical Properties of Titanium, Vanadium, Molybdenum, and Tungsten Related Defects in Silicon (1992) (2)
- The electron capture cross section of Se+ in silicon (1988) (2)
- DEEP ACCEPTORLIKE STATES IN SI DOPED MOLECULAR-BEAM-EPITAXIAL-GROWN ALXGA1-XAS (1996) (2)
- ODMR Investigations of A - Centres in CdTe (1992) (2)
- Process induced midgap level in SiGe alloys (1990) (2)
- Excited states at deep centers in silicon and II VI compounds (1981) (2)
- Excited State Spectroscopy of Deep Defects in Silicon (1989) (2)
- Current Trends in Nanoscience: From Materials to Applications (2006) (2)
- Magnesium-related luminescence in silicon (1998) (2)
- Characterization of Si n Ge m Strained Layer Superlattice P-N Junctions (1993) (2)
- Off-Axis Motions and Distortions in Acceptor-H Complexes from Uniaxial Stress Studies (1991) (2)
- Electronic defect characterization in silicon (1990) (2)
- Heterostructures in Semiconductors (1996) (2)
- Local Auger effects at point defects in silicon (1988) (2)
- Deep levels in uniformly Si doped GaAs/AlxGa1−xAs quantum wells and superlattices (1996) (2)
- Future Material Systems: Requirements and Applications (2008) (1)
- METASTABLE STATES OF SI DONORS IN ALXGA1-XAS (1996) (1)
- Special issue - Current trends in nanotechnologies: From materials to systems - Proceedings of Symposium S, EMRS Spring Meeting 2001, Strasbourg, France, June 5-8, 2001 - Preface (2002) (1)
- Weak E ⊗ E Jahn-Teller effect of a Au-related deep center in silicon (1991) (1)
- The Gold Center in Silicon (1992) (1)
- Spectroscopy on Transition-Metal Defects in Silicon (1992) (1)
- Heterostructures in semiconductors : proceedings of Nobel Symposium 99, Arild, Sweden, June 4-8, 1996 (1996) (1)
- Paramagnetic Resonance of Sn in AlGaAs (1992) (1)
- Electrical and optical defect spectroscopy of compound semiconductors (1991) (1)
- Acoustically driven emission of light in granular and layered semiconductors: recent advances and future prospects (2002) (1)
- Electron Paramagnetic Resonance Studies of Defects in Indium-Doped Silicon (1991) (1)
- Photoexcited and Metastable States of DX Centers in Si Doped Alx Ga1-x As (1993) (1)
- SiGe: a promise into reality? (1995) (1)
- Electrical and Optical Properties of Titanium, Molybdenum and Tungsten Related Defects in Silicon (1992) (1)
- Optical anisotropies in strained Si/SiGe systems (1996) (1)
- Photothermal Ionization Spectroscopy (1991) (1)
- The Excited 5T1 State of the Feio -Center in Silicon (1993) (1)
- Characterization and Optical Studies of Short-Period SimGen Superlattices (1991) (1)
- Photo-Ionization Selection Rules for Deep Oxygen States in GaP (1974) (1)
- Electrical and Optical Properties of 3D- and 4D-Transition Metal Related Centers in Silicon (1993) (1)
- AN ELECTRON PARAMAGNETIC RESONANCE INVESTIGATION OF IRON-INDIUM (1990) (1)
- Electron capture properties of multi-DX levels in Si doped AlGaAs (1997) (1)
- Excellence in European universities (2004) (1)
- Fano resonances in sulfur, selenium and tellurium doped silicon (1983) (1)
- Today’s Mainstream Microelectronics - A Result of Technological, Market and Human Enterprise (2008) (1)
- E-MRS Announces Call for Symposia Topics for 2005 and 2006 (2006) (0)
- EL2 in GaAs — Re-Evaluation of Optical Data (1985) (0)
- Spectroscopic studies of point defects in silicon and germanium (1988) (0)
- Photocapacitance Measurements of the Energy Levels in ZnSe:Mn (1972) (0)
- The Magnesium Related Luminescence in Silicon and its Quenching due to the Presence of Dislocations (1997) (0)
- Deep Centers in Forward Based GaAs/AlGaAs Quantum Wells and Superlattices (1993) (0)
- On the determination of the photo-ionization energy and the concentration of defects created by nuclear radiation in silicon diodes (1975) (0)
- A semiconductor device with a semiconductor body comprising a controlled injectierecombinatiestralingsbron. (1964) (0)
- Alloy fluctuations in Si1-xGex crystals (2001) (0)
- P-N LUMINESCENCE AND PHOTOVOLTAIC EFFECTS IN GaP ** (1960) (0)
- Persistent Decrease of Dark Conductivity due to Illumination in AlGaAs/GaAs Modulation-Doped Heterostructures (1993) (0)
- The influence of the RC product on capture cross section measurements in semiconductors (1988) (0)
- On the preparation and the luminescence of anti-stokes--phosphors of Y$sub 2$O$sub 3$ and La$sub 2$O$sub 3$ activated by erbium (1973) (0)
- Advances in electronic materials : special topic volume with invited papers only (2009) (0)
- A Reevaluation of Electric-Field Enhanced Emission Measurements for Use in Type and Charge State Determination of Point Defects (1992) (0)
- A process for producing a barrier layer in an n-type Cadmiumsulfidkoerper (1962) (0)
- An Electron Paramagnetic Resonance Investigation of Iron-Indium Pairs in Silicon (1989) (0)
- Determination of the Np and pP heterojunction quality in AlxGa1-xAs LPE-grown double heterostructures from the capacitance measurements (2016) (0)
- Photoexcited states of DX centers in Si doped AlxGa1−xAs (1996) (0)
- Intrinsic Optical and Electrical Properties of Strain-Adjusted Short-Period Si m Ge n Superlattices (1993) (0)
- Superlattices Based on Group IV Elemental Semiconductors(Si, Ge, α-Sn) (1993) (0)
- Excitation Spectrum of the Interstitial Iron Donor in Silicon (1991) (0)
- Defect Spectroscopy in Compound Semiconductors (1991) (0)
- European Research Policy: 25 Years Development (2008) (0)
- Vibronic Interaction of a Gold-Related Center in Silicon (1992) (0)
- Characterization of MBE Grown Si/Si1-xGex/Si Structures Using n+p-Diodes (1993) (0)
- Gettering and deffect engineering in semiconductor technology : GADEST '99 : proceedings of the 8th International Autumn Meeting : Höör, Schweden, September 25-28 1999 (1999) (0)
- Characterization of Valence Band Offsets in P-SI/SIGE/SI by Space Charge Spectroscopy (1993) (0)
- Unusual Behaviour of the Indium Hyperfine Interaction of FeIn Pairs in Silicon (1990) (0)
- The Electronic Structure of Interstitial Iron in Silicon (1989) (0)
- Photocapacitance studies of short-period Si/Ge superlattices (1992) (0)
- Pressure dependence of the Pb centre measured by voltage transient spectroscopy (2017) (0)
- A semiconductor device, especially photo-sensitive device (1960) (0)
- Defects in High-Mobility Semiconductor Systems. (1987) (0)
- ERRATUM: Si 1 - x - y Ge x C y : A New Material for Future Microelectronics? (1997) (0)
- Microwave absorption from superconducting crystals of the Tl-Ca-Ba-Cu-O system (1990) (0)
- Photo-Thermal Ionization Spectroscopy of Point Defects in Semiconductors (1989) (0)
- PHOTO-EDSR in Plastically Deformed p-Si (1995) (0)
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