Hideo Ohno
#29,924
Most Influential Person Now
Japanese physicist
Hideo Ohno's AcademicInfluence.com Rankings
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Physics
Hideo Ohno's Degrees
- Bachelors Physics University of Tokyo
- Masters Physics University of Tokyo
- PhD Physics University of Tokyo
Why Is Hideo Ohno Influential?
(Suggest an Edit or Addition)According to Wikipedia, Hideo Ohno is a Japanese physicist. He is the 22nd president of Tohoku University, succeeding Susumu Satomi in April 2018. Biography Ohno received B.S., M.S. and Ph.D. degrees from the University of Tokyo in 1977, 1979 and 1982. He spent one year as a visiting graduate student at Cornell University in 1979. He was a lecturer at the School of Engineering at Hokkaido University from 1982 to 1983, and an associate professor from 1983 to 1994. He was a visiting scientist at IBM T. J. Watson Research Center from 1988 to 1990.
Hideo Ohno's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. (2010) (2699)
- Electrical spin injection in a ferromagnetic semiconductor heterostructure (1999) (2028)
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs (1996) (1918)
- Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO (2004) (1915)
- Electric-field control of ferromagnetism (2000) (1679)
- Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature (2008) (1247)
- Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors (2000) (1210)
- Current-induced torques in magnetic materials. (2012) (877)
- Transport properties and origin of ferromagnetism in (Ga,Mn)As (1998) (813)
- Layer thickness dependence of the current-induced effective field vector in Ta|CoFeB|MgO. (2012) (703)
- Properties of ferromagnetic III–V semiconductors (1999) (675)
- Control of magnetism by electric fields. (2015) (666)
- Magnetization switching by spin-orbit torque in an antiferromagnet-ferromagnet bilayer system. (2015) (665)
- Dilute ferromagnetic semiconductors: Physics and spintronic structures (2013) (616)
- Current-induced domain-wall switching in a ferromagnetic semiconductor structure (2004) (586)
- Magnetization vector manipulation by electric fields (2008) (554)
- Spintronics based random access memory: a review (2017) (544)
- Semiconductor spintronics (2002) (543)
- Electrical Manipulation of Magnetization Reversal in a Ferromagnetic Semiconductor (2003) (538)
- Magnetic Tunnel Junctions for Spintronic Memories and Beyond (2007) (432)
- Electric-field effects on thickness dependent magnetic anisotropy of sputtered MgO/Co40Fe40B20/Ta structures (2010) (396)
- A spin-orbit torque switching scheme with collinear magnetic easy axis and current configuration. (2016) (391)
- Blue Light-Emitting Diode Based on ZnO (2005) (391)
- Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces (1986) (376)
- Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions (2008) (332)
- SPIN RELAXATION IN GAAS(110) QUANTUM WELLS (1999) (330)
- Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction (2012) (321)
- Interface control of the magnetic chirality in CoFeB/MgO heterostructures with heavy-metal underlayers (2014) (311)
- Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier (2007) (300)
- Quantitative characterization of the spin-orbit torque using harmonic Hall voltage measurements (2013) (299)
- Modeling and simulation of polycrystalline ZnO thin-film transistors (2003) (292)
- Spin-transfer torque RAM technology: Review and prospect (2012) (276)
- High Mobility Thin Film Transistors with Transparent ZnO Channels (2003) (267)
- Spin transport and spin torque in antiferromagnetic devices (2018) (263)
- A window on the future of spintronics. (2010) (242)
- Integer factorization using stochastic magnetic tunnel junctions (2019) (233)
- Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm (2014) (228)
- Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure (2012) (223)
- Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature (2005) (222)
- Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magn (2006) (207)
- Single-shot time-resolved measurements of nanosecond-scale spin-transfer induced switching: stochastic versus deterministic aspects. (2008) (205)
- Magnetic Circular Dichroism Studies of Carrier-Induced Ferromagnetism in ( Ga 1 − x Mn x ) As (1999) (204)
- Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions (2005) (192)
- 2Mb Spin-Transfer Torque RAM (SPRAM) with Bit-by-Bit Bidirectional Current Write and Parallelizing-Direction Current Read (2007) (190)
- Velocity of domain-wall motion induced by electrical current in the ferromagnetic semiconductor (Ga,Mn)As. (2006) (187)
- Experimental probing of the interplay between ferromagnetism and localization in (Ga, Mn)As (2009) (184)
- Effect of low-temperature annealing on (Ga,Mn)As trilayer structures (2003) (180)
- Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAs (1997) (179)
- Room-temperature ferromagnetism in zincblende CrSb grown by molecular-beam epitaxy (2001) (179)
- Giant tunnel magnetoresistance and high annealing stability in CoFeB∕MgO∕CoFeB magnetic tunnel junctions with synthetic pinned layer (2006) (161)
- Mott relation for anomalous Hall and Nernst effects in Ga1-xMnxAs ferromagnetic semiconductors. (2008) (153)
- Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO (2015) (147)
- Electric-field control of ferromagnetism in (Ga,Mn)As (2006) (141)
- A ferromagnetic III–V semiconductor: (Ga,Mn)As (2001) (139)
- Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions (2011) (133)
- Nonmetal-metal-nonmetal transition and large negative magnetoresistance in (Ga, Mn)As/GaAs (1997) (128)
- Antiferromagnetic p-d exchange in ferromagnetic Ga 1-x Mn x As epilayers (1999) (128)
- Current-induced domain wall motion in perpendicularly magnetized CoFeB nanowire (2011) (127)
- New III‐V diluted magnetic semiconductors (invited) (1991) (127)
- Current-induced effective field in perpendicularly magnetized Ta/CoFeB/MgO wire (2011) (127)
- Formation and current-induced motion of synthetic antiferromagnetic skyrmion bubbles (2019) (125)
- Analogue spin–orbit torque device for artificial-neural-network-based associative memory operation (2016) (125)
- Spontaneous splitting of ferromagnetic (Ga, Mn)As valence band observed by resonant tunneling spectroscopy (1998) (122)
- Current-driven magnetization reversal in a ferromagnetic semiconductor (Ga,Mn)As/GaAs/(Ga,Mn)As tunnel junction. (2004) (121)
- Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures (2000) (120)
- A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and `1'/`0' Dual-Array Equalized Reference Scheme (2010) (120)
- Current-Induced Magnetization Switching in MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layer (2006) (118)
- MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers (2009) (118)
- Optical manipulation of nuclear spin by a two-dimensional electron gas. (2000) (117)
- Domain Structure in CoFeB Thin Films With Perpendicular Magnetic Anisotropy (2011) (116)
- Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions (2017) (114)
- MgO/CoFeB/Ta/CoFeB/MgO Recording Structure in Magnetic Tunnel Junctions With Perpendicular Easy Axis (2013) (112)
- Magnetotransport properties of metallic (Ga,Mn)As films with compressive and tensile strain (2004) (111)
- Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers (2013) (111)
- Character of states near the Fermi level in (Ga,Mn)as : Impurity to valence band crossover (2007) (110)
- A multi-level-cell spin-transfer torque memory with series-stacked magnetotunnel junctions (2010) (105)
- Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier (2004) (105)
- Dependence of magnetic anisotropy on MgO thickness and buffer layer in Co20Fe60B20-MgO structure (2011) (103)
- Universality Classes for Domain Wall Motion in the Ferromagnetic Semiconductor (Ga,Mn)As (2007) (101)
- Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field (1999) (100)
- Artificial Neuron and Synapse Realized in an Antiferromagnet/Ferromagnet Heterostructure Using Dynamics of Spin–Orbit Torque Switching (2019) (100)
- Electric-field effects on magnetic anisotropy and damping constant in Ta/CoFeB/MgO investigated by ferromagnetic resonance (2014) (99)
- Dependence of Tunnel Magnetoresistance in MgO Based Magnetic Tunnel Junctions on Ar Pressure during MgO Sputtering (2005) (98)
- Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper (2013) (97)
- An Overview of Nonvolatile Emerging Memories— Spintronics for Working Memories (2016) (97)
- Arsenic stabilization of InP substrates for growth of GaxIn1−xAs layers by molecular beam epitaxy (1980) (96)
- Ferromagnetic III–V and II–VI Semiconductors (2003) (95)
- Toward Functional Spintronics (2001) (91)
- Electronic and microstructural properties of disorder‐induced gap states at compound semiconductor–insulator interfaces (1987) (91)
- 10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications (2014) (90)
- CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions (2012) (88)
- Standby-Power-Free Integrated Circuits Using MTJ-Based VLSI Computing (2016) (86)
- chapter 1 III-V Ferromagnetic Semiconductors (2002) (84)
- Magnetization switching in a CoFeB/MgO magnetic tunnel junction by combining spin-transfer torque and electric field-effect (2014) (83)
- Transmission electron microscopy investigation of CoFeB/MgO/CoFeB pseudospin valves annealed at different temperatures (2009) (83)
- MTJ-based nonvolatile logic-in-memory circuit, future prospects and issues (2009) (81)
- Current-Induced Magnetization Switching in MgO Barrier Magnetic Tunnel Junctions With CoFeB-Based Synthetic Ferrimagnetic Free Layers (2008) (81)
- A nondestructive analysis of the B diffusion in Ta–CoFeB–MgO–CoFeB–Ta magnetic tunnel junctions by hard x-ray photoemission (2010) (81)
- A 3.14 um2 4T-2MTJ-cell fully parallel TCAM based on nonvolatile logic-in-memory architecture (2012) (80)
- Anomalous temperature dependence of current-induced torques in CoFeB / MgO heterostructures with Ta-based underlayers (2014) (80)
- Atomic-Scale Structure and Local Chemistry of CoFeB-MgO Magnetic Tunnel Junctions. (2016) (79)
- Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field (2012) (79)
- Magnetic tunnel junction for nonvolatile CMOS logic (2010) (78)
- Magnetotransport properties of (Ga, Mn)Sb (2000) (78)
- GaInAs‐AlInAs structures grown by molecular beam epitaxy (1981) (77)
- On the origin and elimination of macroscopic defects in MBE films (1981) (77)
- Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells (2001) (75)
- Standby-Power-Free Compact Ternary Content-Addressable Memory Cell Chip Using Magnetic Tunnel Junction Devices (2009) (74)
- Direct-current voltages in (Ga,Mn)As structures induced by ferromagnetic resonance (2013) (74)
- Ferromagnetism of magnetic semiconductors--Zhang-Rice limit (2001) (73)
- Modeling of grain boundary barrier modulation in ZnO invisible thin film transistors (2004) (73)
- Molecular beam epitaxy of III–V diluted magnetic semiconductor (Ga,Mn)Sb (2000) (70)
- Electronic Properties and Modeling of Lattice-Mismatched and Regrown GaAs Interfaces Prepared by Metalorganic Vapor Phase Epitaxy (1988) (70)
- Domain-wall resistance in ferromagnetic (Ga,Mn)As. (2006) (70)
- Detection of single magnetic bead for biological applications using an InAs quantum-well micro-Hall sensor (2005) (70)
- A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating Scheme (2013) (69)
- Electric-field-induced magnetization switching in CoFeB/MgO magnetic tunnel junctions with high junction resistance (2016) (69)
- Spin-dependent tunneling and properties of ferromagnetic (Ga,Mn)As (invited) (1999) (67)
- InAs/AlSb quantum cascade lasers operating at 10 μm (2003) (67)
- Control of Fermi level pinning and recombination processes at GaAs surfaces by chemical and photochemical treatments (1988) (67)
- Magnetic moment of Mn in the ferromagnetic semiconductor (Ga0.98Mn0.02)As (2000) (66)
- Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating (2013) (65)
- Magnetic and transport properties of the ferromagnetic semiconductor heterostructures (In,Mn)As/(Ga,Al)Sb (1999) (65)
- Critical role of W deposition condition on spin-orbit torque induced magnetization switching in nanoscale W/CoFeB/MgO (2016) (65)
- Engineering magnetism in semiconductors (2006) (64)
- Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission (2012) (64)
- RECENT PROGRESS OF PERPENDICULAR ANISOTROPY MAGNETIC TUNNEL JUNCTIONS FOR NONVOLATILE VLSI (2012) (63)
- Spin-orbit torques in high-resistivity-W/CoFeB/MgO (2018) (63)
- Metal-insulator transition and magnetotransport in III-V compound diluted magnetic semiconductors (1999) (63)
- Device-size dependence of field-free spin-orbit torque induced magnetization switching in antiferromagnet/ferromagnet structures (2017) (63)
- Antiferromagnetism in hcp Iron-Manganese Alloys (1971) (62)
- Properties of Ga1−xMnxAs with high Mn composition (x>0.1) (2007) (62)
- Hall magnetometry on a single iron nanoparticle (2002) (62)
- PHASE TRANSITION IN THE NU = 2 BILAYER QUANTUM HALL STATE (1998) (62)
- Curie temperature versus hole concentration in field-effect structures of Ga 1 − x Mn x As (2010) (61)
- Observation of magnetic domain structure in a ferromagnetic semiconductor (Ga, Mn)As with a scanning Hall probe microscope (2000) (61)
- Perspective: Spintronic synapse for artificial neural network (2018) (60)
- Comprehensive study of CoFeB-MgO magnetic tunnel junction characteristics with single- and double-interface scaling down to 1X nm (2013) (59)
- Electron mobility exceeding 104 cm2/V s in an AlGaN–GaN heterostructure grown on a sapphire substrate (1999) (59)
- A self‐consistent computer simulation of compound semiconductor metal‐insulator‐semiconductor C‐V curves based on the disorder‐induced gap‐state model (1988) (58)
- 1Mb 4T-2MTJ nonvolatile STT-RAM for embedded memories using 32b fine-grained power gating technique with 1.0ns/200ps wake-up/power-off times (2012) (57)
- GaAs and In0.53Ga0.47As MIS Structures Having an Ultrathin Pseudomorphic Interface Control Layer of Si Prepared by MBE (1988) (57)
- High-Mobility Field-Effect Transistors Based on Single-Crystalline ZnO Channels (2005) (57)
- Spatially homogeneous ferromagnetism of (Ga, Mn)As. (2010) (57)
- Anomalous Hall effect in field-effect structures of (Ga,Mn)As. (2010) (56)
- Current induced effective magnetic field and magnetization reversal in uniaxial anisotropy (Ga,Mn)As (2010) (54)
- Six-input lookup table circuit with 62% fewer transistors using nonvolatile logic-in-memory architecture with series/parallel-connected magnetic tunnel junctions (2012) (54)
- Magnetic properties of (Al,Ga,Mn)As (2002) (54)
- Ferromagnetism in III-V and II-VI semiconductor structures (2000) (53)
- Magnetism of Co-doped ZnO epitaxially grown on a ZnO substrate (2012) (52)
- Highly-scalable disruptive reading scheme for Gb-scale SPRAM and beyond (2010) (52)
- Fabrication of a nonvolatile lookup-table circuit chip using magneto/semiconductor-hybrid structure for an immediate-power-up field programmable gate array (2009) (52)
- P-Type diluted magnetic III–V semiconductors (1991) (52)
- Fully parallel 6T-2MTJ nonvolatile TCAM with single-transistor-based self match-line discharge control (2011) (52)
- High-speed simulator including accurate MTJ models for spintronics integrated circuit design (2012) (51)
- Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions (2011) (51)
- Chiral-spin rotation of non-collinear antiferromagnet by spin–orbit torque (2021) (51)
- Electric field control of Skyrmions in magnetic nanodisks (2016) (50)
- In-plane magnetic field dependence of electric field-induced magnetization switching (2013) (50)
- Relaxation of photoinjected spins during drift transport in GaAs (2002) (50)
- INTEGRATED MICROMECHANICAL CANTILEVER MAGNETOMETRY OF GA1-XMNXAS (1999) (49)
- Tunnel magnetoresistance in MgO-barrier magnetic tunnel junctions with bcc-CoFe(B) and fcc-CoFe free layers (2006) (49)
- Tunnel magnetoresistance properties and film structures of double MgO barrier magnetic tunnel junctions (2010) (49)
- Intersubband transitions in ZnO multiple quantum wells (2008) (49)
- 3DAP analysis of (Ga,Mn)As diluted magnetic semiconductor thin film. (2009) (48)
- Double heterostructure Ga0.47In0.53As MESFETs by MBE (1980) (48)
- Nonvolatile Logic-in-Memory LSI Using Cycle-Based Power Gating and its Application to Motion-Vector Prediction (2015) (48)
- Surface morphologies of homoepitaxial ZnO on Zn- and O-polar substrates by plasma assisted molecular beam epitaxy (2006) (47)
- Hydrogenated amorphous silicon position sensitive detector (1985) (47)
- Electrical spin injection in ferromagnetic//nonmagnetic semiconductor heterostructures (2001) (45)
- Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers (2011) (45)
- New diluted magnetic semiconductors based on III–V compounds (1991) (45)
- 20-nm magnetic domain wall motion memory with ultralow-power operation (2013) (45)
- Spin relaxation in n-modulation doped GaAs/AlGaAs (110) quantum wells (2001) (44)
- A disturbance-free read scheme and a compact stochastic-spin-dynamics-based MTJ circuit model for Gb-scale SPRAM (2009) (44)
- Ferromagnetic III–V heterostructures (2000) (44)
- Two-barrier stability that allows low-power operation in current-induced domain-wall motion (2013) (44)
- Interlayer exchange in (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures (1998) (44)
- Transmission electron microscopy study on the effect of various capping layers on CoFeB/MgO/CoFeB pseudo spin valves annealed at different temperatures (2012) (43)
- Magnetophonon Resonance in a Two-Dimensional Electron System in the GaAs–AlxGa1-xAs Heterojunction Interface (1982) (43)
- Carrier Mobility Dependence of Electron Spin Relaxation in GaAs Quantum Wells (1999) (42)
- InAs self-organized quantum dashes grown on GaAs (211)B (1997) (42)
- Taking the Hall Effect for a Spin (2005) (41)
- Simulation of magnetization switching by electric-field manipulation of magnetic anisotropy (2010) (41)
- Tamm states in superlattices (1992) (40)
- Adiabatic spin-transfer-torque-induced domain wall creep in a magnetic metal (2015) (40)
- Antiferromagnetism of Dilute Cr Alloys with Co and Ni (1968) (40)
- An InAs-Based Intersubband Quantum Cascade Laser (2002) (40)
- Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy (2017) (40)
- Epitaxy of III-V diluted magnetic semiconductor materials (1990) (40)
- Electric field-induced ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction under dc bias voltages (2014) (40)
- Depinning probability of a magnetic domain wall in nanowires by spin-polarized currents (2013) (39)
- A Nonvolatile Associative Memory-Based Context-Driven Search Engine Using 90 nm CMOS/MTJ-Hybrid Logic-in-Memory Architecture (2014) (39)
- (Ga, Mn)As/GaAs Diluted Magnetic Semiconductor Superlattice Structures Prepared by Molecular Beam Epitaxy (1997) (39)
- Low-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As (1999) (39)
- Optical pump-probe measurements of local nuclear spin coherence in semiconductor quantum wells. (2006) (38)
- Fabrication of a 3000-6-input-LUTs embedded and block-level power-gated nonvolatile FPGA chip using p-MTJ-based logic-in-memory structure (2015) (37)
- Spin Polarization Dependent Far Infrared Absorption in Ga1-xMnxAs (2001) (37)
- Magnetization reversal induced by in-plane current in Ta/CoFeB/MgO structures with perpendicular magnetic easy axis (2014) (37)
- Light emission spectra of AlGaAs/GaAs multiquantum wells induced by scanning tunneling microscope (1998) (37)
- Nanosecond Random Telegraph Noise in In-Plane Magnetic Tunnel Junctions. (2021) (36)
- Direct imaging of gate-controlled persistent spin helix state in a modulation-doped GaAs/AlGaAs quantum well (2013) (36)
- Peculiar temperature dependence of electric-field effect on magnetic anisotropy in Co/Pd/MgO system (2016) (36)
- Antiferromagnetism in hcp Iron-Ruthenium and hcp Iron-Osmium Alloys (1971) (36)
- Memristive control of mutual spin Hall nano-oscillator synchronization for neuromorphic computing (2020) (36)
- Electron spin relaxation beyond D'yakonov–Perel’ interaction in GaAs/AlGaAs quantum wells (2000) (35)
- REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION OSCILLATIONS DURING GROWTH OF GAAS AT LOW TEMPERATURES UNDER HIGH AS OVERPRESSURE (1997) (35)
- Size Dependence of Magnetic Properties of Nanoscale CoFeB–MgO Magnetic Tunnel Junctions with Perpendicular Magnetic Easy Axis Observed by Ferromagnetic Resonance (2013) (35)
- Magnetotransport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time (2000) (35)
- III-V Ferromagnetic Semiconductors (2002) (35)
- Control of Magnetism by Electric Fields (2015) (34)
- Faraday rotation of ferromagnetic (Ga,Mn)As (1998) (34)
- Neuromorphic computing with antiferromagnetic spintronics (2020) (34)
- Magnetization switching schemes for nanoscale three-terminal spintronics devices (2017) (34)
- Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn)As∕n+-GaAs Esaki diode (2006) (33)
- Electric double layer transistor with a (Ga,Mn)As channel (2010) (33)
- Modulation of noise in submicron GaAs/AlGaAs hall devices by gating. (2004) (33)
- Magnetotransport measurements of current induced effective fields in Ta/CoFeB/MgO (2013) (33)
- Atomic layer epitaxy of GaAs using triethylgallium and arsine (1989) (33)
- Spin-orbit torque switching of an antiferromagnetic metallic heterostructure (2020) (33)
- Families of magnetic semiconductors — an overview (2019) (32)
- Temperature-dependent properties of CoFeB/MgO thin films: Experiments versus simulations (2018) (32)
- High-speed photoconductive detectors using GaInAs (1981) (32)
- Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors (2002) (32)
- A content addressable memory using magnetic domain wall motion cells (2011) (31)
- Electron density dependence of the spin Hall effect in GaAs probed by scanning Kerr rotation microscopy (2009) (31)
- Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs (2013) (31)
- Scaling magnetic tunnel junction down to single-digit nanometers—Challenges and prospects (2020) (30)
- Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions (2013) (30)
- Boron Composition Dependence of Magnetic Anisotropy and Tunnel Magnetoresistance in MgO/CoFe(B) Based Stack Structures (2012) (30)
- Decomposition of 1/f noise in Al(x)Ga(1-x)As/GaAs Hall devices. (2006) (30)
- InP MISFET's with Al 2 O 3 /Native Oxide double-layer gate insulators (1984) (30)
- Giant voltage-controlled modulation of spin Hall nano-oscillator damping (2020) (30)
- Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices (2017) (30)
- Spin-dependent phenomena in ferromagnetic/nonmagnetic III-V heterostructures (2001) (30)
- Optoelectronic devices based on type II polytype tunnel heterostructures (1992) (30)
- Valence band barrier at (Ga,Mn)As/GaAs interfaces (2002) (29)
- Correlation between Photoluminescence and Surface-State Density on GaAs Surfaces Subjected to Various Surface Treatments (1988) (29)
- Generalized scaling of spin qubit coherence in over 12,000 host materials (2021) (29)
- High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction (2012) (29)
- Perpendicular-anisotropy CoFeB-MgO based magnetic tunnel junctions scaling down to 1X nm (2014) (29)
- 10 nmf perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400°C high thermal tolerance by boron diffusion control (2015) (29)
- Current-Induced Effective Fields Detected by Magnetotrasport Measurements (2013) (29)
- Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory (2012) (28)
- Control of ferromagnetism in field-effect transistor of a magnetic semiconductor (2002) (28)
- Anodic Oxidation of Hydrogenated Amorphous Silicon and Properties of Oxide (1988) (28)
- A sub-ns three-terminal spin-orbit torque induced switching device (2016) (28)
- Strongly Anisotropic Hopping Conduction in (Ga, Mn)As/GaAs (1998) (28)
- A 47.14- $\mu\text{W}$ 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications (2019) (28)
- Restructuring of memory hierarchy in computing system with spintronics-based technologies (2012) (27)
- High-speed and reliable domain wall motion device: Material design for embedded memory and logic application (2012) (27)
- Electrically connected spin-torque oscillators array for 2.4 GHz WiFi band transmission and energy harvesting (2021) (27)
- Effects of carrier mass differences on the current‐voltage characteristics of resonant tunneling structures (1990) (27)
- Ferromagnetic III–V Semiconductors and Their Heterostructures (2002) (26)
- Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer (2013) (26)
- First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology (2019) (26)
- Domain Wall Motion Device for Nonvolatile Memory and Logic — Size Dependence of Device Properties (2014) (26)
- Growth and properties of (Ga,Mn)As films with high Mn concentration (2001) (26)
- Fabrication of a 99%-energy-less nonvolatile multi-functional CAM chip using hierarchical power gating for a massively-parallel full-text-search engine (2013) (26)
- Effect of exposure to group III alkyls on compound semiconductor surfaces observed by x-ray photoelectron spectroscopy (1989) (26)
- Effect of electric-field modulation of magnetic parameters on domain structure in MgO/CoFeB (2016) (25)
- Fluorescence extended x-ray absorption fine structure study on local structures around Mn atoms in thin (In, Mn)As layer and (In, Mn)As quantum dots (2001) (25)
- Current-Induced Domain Wall Motion in Perpendicularly Magnetized Co/Ni Nanowire under In-Plane Magnetic Fields (2012) (25)
- Effects of boron composition on tunneling magnetoresistance ratio and microstructure of CoFeB/MgO/CoFeB pseudo-spin-valve magnetic tunnel junctions (2012) (25)
- A 1.5nsec/2.1nsec random read/write cycle 1Mb STT-RAM using 6T2MTJ cell with background write for nonvolatile e-memories (2013) (24)
- Engineering Single-Shot All-Optical Switching of Ferromagnetic Materials. (2020) (24)
- Low Field Transport Properties of Two-Dimensional Electron Gas in Selectively Doped N-AlGaAs/GaInAs/GaAs Pseudomorphic Structures (1988) (24)
- Electric-Field Modulation of Damping Constant in a Ferromagnetic Semiconductor (Ga,Mn)As. (2015) (24)
- Co/Pt multilayer-based magnetic tunnel junctions with a CoFeB/Ta insertion layer (2014) (24)
- DC voltages in Py and Py/Pt under ferromagnetic resonance (2013) (24)
- Dependence of Magnetic Anisotropy in Co20Fe60B20 Free Layers on Capping Layers in MgO-Based Magnetic Tunnel Junctions with In-Plane Easy Axis (2012) (24)
- Vertical electric field tuning of the exciton fine structure splitting and photon correlation measurements of GaAs quantum dot (2010) (23)
- Low‐temperature mobility of two‐dimensional electron gas in selectively doped pseudomorphic N‐AlGaAs/GaInAs/GaAs structures (1989) (23)
- Semiconductor Spin Electronics (2001) (23)
- High-Performance Shape-Anisotropy Magnetic Tunnel Junctions down to 2.3 nm (2020) (23)
- Magnetic domain structure of a ferromagnetic semiconductor (Ga,Mn)As observed with scanning probe microscopes (2001) (23)
- A 600MHz MTJ-based nonvolatile latch making use of incubation time in MTJ switching (2011) (23)
- Zincblende CrSb/GaAs multilayer structures with room-temperature ferromagnetism (2003) (23)
- Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions (2006) (23)
- Effect of n+-GaAs thickness and doping density on spin injection of GaMnAs/n+-GaAs Esaki tunnel junction (2005) (23)
- Spin-transfer physics and the model of ferromagnetism in (Ga,Mn)As (2007) (23)
- Fermi level position, Coulomb gap, and Dresselhaus splitting in (Ga,Mn)As (2016) (23)
- CoFeB Thickness Dependence of Damping Constants for Single and Double CoFeB-MgO Interface Structures (2015) (23)
- Scalability Prospect of Three-Terminal Magnetic Domain-Wall Motion Device (2012) (23)
- Ferromagnetic Semiconductor Heterostructures for Spintronics (2007) (23)
- Magnetic circular dichroism in Mn 2p core absorption of Ga1−xMnxAs (2001) (23)
- Temperature dependence of energy barrier in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis (2015) (23)
- Design of a 270ps-access 7-transistor/2-magnetic-tunnel-junction cell circuit for a high-speed-search nonvolatile ternary content-addressable memory (2012) (22)
- Evidence for Ferromagnetic Clusters in the Colossal-Magnetoresistance Material EuB_{6}. (2018) (22)
- Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) films (2013) (22)
- Mid-infrared InAs∕AlGaSb superlattice quantum-cascade lasers (2005) (22)
- Magnetotransport properties of (Ga,Mn)As grown on GaAs (4 1 1)A substrates (2001) (22)
- Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayer Electrodes and an MgO Barrier (2009) (22)
- Local electronic structures of GaMnAs observed by cross-sectional scanning tunneling microscopy (2002) (22)
- Multipulse operation and optical detection of nuclear spin coherence in a GaAs/AlGaAs quantum well. (2008) (22)
- Growth of a (GaAs)n/(InAs)n Superlattice Semiconductor by Molecular Beam Epitaxy (1985) (22)
- Fabrication of a magnetic tunnel junction-based 240-tile nonvolatile field-programmable gate array chip skipping wasted write operations for greedy power-reduced logic applications (2013) (21)
- Ultrafast deposition of microcrystalline Si by thermal plasma chemical vapor deposition (2001) (21)
- A novel SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for higher immunity to read disturbance and reducing write-current dispersion (2007) (21)
- An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material (2008) (21)
- Ga0.47In0.53As metal-semiconductor-metal photodiodes using a lattice mismatched Al0.4Ga0.6As Schottky assist layer (1988) (21)
- Giant perpendicular magnetic anisotropy in Ir/Co/Pt multilayers (2019) (20)
- Spin-dependent scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures (2000) (20)
- Spin-torque switching window, thermal stability, and material parameters of MgO tunnel junctions (2011) (20)
- Thermal stability of a magnetic domain wall in nanowires (2015) (20)
- Growth of GaAs, InAs, and GaAs/InAs superlattice structures at low substrate temperature by MOVPE (1988) (20)
- A New AlGaAs/GaAs Heterojunction FET with Insulated Gate Structure (MISSFET) (1982) (20)
- Spin-orbit torque induced magnetization switching in Co/Pt multilayers (2017) (20)
- Electrical control of spin coherence in ZnO (2008) (19)
- A Computer Analysis of Effects of Annealing on InP Insulator-Semiconductor Interface Properties Using MIS C-V Curves (1988) (19)
- Damage Recovery by Reductive Chemistry after Methanol-Based Plasma Etch to Fabricate Magnetic Tunnel Junctions (2012) (19)
- Electric field control of thermal stability and magnetization switching in (Ga,Mn)As (2013) (19)
- Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric (2008) (19)
- Energy Efficient Control of Ultrafast Spin Current to Induce Single Femtosecond Pulse Switching of a Ferromagnet (2020) (19)
- Electric-field effect on spin-wave resonance in a nanoscale CoFeB/MgO magnetic tunnel junction (2017) (18)
- MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor pn junctions based on (Ga,Mn)As (2000) (18)
- Surfactant effect of Mn on the formation of self-organized InAs nanostructures (2000) (18)
- Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme (2011) (18)
- A Low Threshold Current Density InAs/AlGaSb Superlattice Quantum Cascade Laser Operating at 14 µm (2004) (18)
- Crystal orientation and anomalous Hall effect of sputter-deposited non-collinear antiferromagnetic Mn3Sn thin films (2019) (18)
- Hardware-Aware In Situ Learning Based on Stochastic Magnetic Tunnel Junctions (2021) (18)
- INTERSUBBAND ELECTROLUMINESCENCE IN INAS/GASB/ALSB TYPE-II CASCADE STRUCTURES (1999) (18)
- Current-Assisted Domain Wall Motion in Ferromagnetic Semiconductors (2006) (18)
- Strong anisotropic spin dynamics in narrow n-InGaAs/AlGaAs (110) quantum wells (2005) (18)
- Magnetic-field-angle dependence of coercivity in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis (2017) (18)
- Annealing temperature dependence of magnetic properties of CoFeB/MgO stacks on different buffer layers (2017) (17)
- Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin–orbit torque (2021) (17)
- Magnetization reversal in elongated Fe nanoparticles (2005) (17)
- Electronic Properties of a Photochemical Oxide-GaAs Interface (1987) (17)
- Gate control of dynamic nuclear polarization in GaAs quantum wells. (2005) (17)
- Tangential magnetoresistance of two‐dimensional electron gas at a selectively doped n‐GaAlAs/GaAs heterojunction interface grown by molecular beam epitaxy (1982) (17)
- Magnetic stray-field studies of a single Cobalt nanoelement as a component of the building blocks of artificial square spin ice (2016) (17)
- Impact of Tungsten Sputtering Condition on Magnetic and Transport Properties of Double-MgO Magnetic Tunneling Junction With CoFeB/W/CoFeB Free Layer (2017) (17)
- InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substrates (1998) (17)
- Improvement of Thermal Tolerance of CoFeB–MgO Perpendicular-Anisotropy Magnetic Tunnel Junctions by Controlling Boron Composition (2016) (16)
- Spintronics [Scanning the Issue] (2016) (16)
- Molecular beam epitaxy of GaSb with high concentration of Mn (2000) (16)
- Nanocluster building blocks of artificial square spin ice: Stray-field studies of thermal dynamics (2015) (16)
- 1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator for Improving Device Variation Tolerance (2015) (16)
- Spin-orbit torques and Dzyaloshinskii-Moriya interaction in PtMn/[Co/Ni] heterostructures (2017) (16)
- Low-temperature conduction and giant negative magnetoresistance in III–V-based diluted magnetic semiconductor: (Ga, Mn)As/GaAs (1998) (16)
- Ferromagnetism and heterostructures of III–V magnetic semiconductors (2000) (16)
- Bridging semiconductor and magnetism (2013) (16)
- CoNi Films with Perpendicular Magnetic Anisotropy Prepared by Alternate Monoatomic Layer Deposition (2013) (16)
- Mechanism of High Gain in GaAs Photoconductive Detectors under Low Excitation (1984) (16)
- Deep level characterization of AlGaAs and selectively doped N‐AlGaAs/GaAs heterojunctions (1985) (16)
- Growth and properties of (Ga, Mn) As: A new III–V diluted magnetic semiconductor (1997) (16)
- A 600-µW ultra-low-power associative processor for image pattern recognition employing magnetic tunnel junction-based nonvolatile memories with autonomic intelligent power-gating scheme (2016) (16)
- Microscopic identification of dopant atoms in Mn-doped GaAs layers (2002) (15)
- A 1.5nsec/2.1nsec random read/write cycle 1Mb STT-RAM using 6T2MTJ cell with background write for nonvolatile e-memories (2013) (15)
- Spin-orbit torque-induced switching of in-plane magnetized elliptic nanodot arrays with various easy-axis directions measured by differential planar Hall resistance (2019) (15)
- Electrical magnetization reversal in ferromagnetic III–V semiconductors (2006) (15)
- Spatial control of magnetic anisotropy for current induced domain wall injection in perpendicularly magnetized CoFeB|MgO nanostructures (2012) (15)
- Properties of Ga1−xMnxAs with high x (>0.1) (2008) (15)
- Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation (2017) (15)
- Magnetic and transport properties of Sb2Te3 doped with high concentration of Cr (2017) (15)
- Self‐limiting deposition of Ga on a GaAs surface by thermal decomposition of diethylgalliumchloride observed by x‐ray photoelectron spectroscopy (1989) (15)
- Intersubband absorption in n-doped InAs/AlSb multiple-quantum-well structures (2003) (15)
- Evaluation of energy barrier of CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis using retention time measurement (2017) (14)
- Process-induced damage and its recovery for a CoFeB–MgO magnetic tunnel junction with perpendicular magnetic easy axis (2014) (14)
- Deep Electron Traps in Undoped GaAs Grown by MOCVD (1984) (14)
- Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: a reflection high-energy electron diffraction study (1998) (14)
- Spintronics primitive gate with high error correction efficiency 6(Perror)2 for logic-in memory architecture (2012) (14)
- A power-gated MPU with 3-microsecond entry/exit delay using MTJ-based nonvolatile flip-flop (2013) (14)
- A hybrid CMOS/magnetic tunnel junction approach for nonvolatile integrated circuits (2006) (14)
- Design and Fabrication of a One-Transistor/One-Resistor Nonvolatile Binary Content-Addressable Memory Using Perpendicular Magnetic Tunnel Junction Devices with a Fine-Grained Power-Gating Scheme (2011) (14)
- Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20 nm (2017) (14)
- Temperature dependence of electroluminescence and I–V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions (2001) (14)
- Electric Field Effect on Magnetization of an Fe Ultrathin Film (2012) (14)
- Arsenic flux dependence of InAs nanostructure formation on GaAs (211)B surface (2000) (13)
- Epitaxy and properties of InMnAs/AlGaSb diluted magnetic III-V semiconductor heterostructures (1997) (13)
- Hysteretic dynamic nuclear polarization in GaAs/AlxGa1-xAs (110) quantum wells (2003) (13)
- Ferromagnetism Induced by Free Carriers in P-Type Structures of Diluted Magnetic Semiconductors (2000) (13)
- Electric-field induced nonlinear ferromagnetic resonance in a CoFeB/MgO magnetic tunnel junction (2015) (13)
- Fine-Grained Power-Gating Scheme of a Metal–Oxide–Semiconductor and Magnetic-Tunnel-Junction-Hybrid Bit-Serial Ternary Content-Addressable Memory (2010) (13)
- Magnetic Properties of CoFeB–MgO Stacks With Different Buffer-Layer Materials (Ta or Mo) (2016) (13)
- Implementation of a perpendicular MTJ-based read-disturb-tolerant 2T-2R nonvolatile TCAM based on a reversed current reading scheme (2012) (13)
- Giant Negative Magnetoresistance of (Ga,Mn)As/GaAs in the Vicinity of a Metal–Insulator Transition (1998) (13)
- Single-electron switching in AlxGa1-xAs/GaAs Hall devices (2006) (13)
- Tunnel magnetoresistance properties and annealing stability in perpendicular anisotropy MgO-based magnetic tunnel junctions with different stack structures (2011) (13)
- Magnetization dynamics of a CrO2 grain studied by micro-Hall magnetometry (2010) (13)
- Electric-field effect on magnetic anisotropy in Pt/Co/Pd/MgO structures deposited on GaAs and Si substrates (2017) (13)
- Hybrid Orbital Energy for Heterojunction Band Lineup (1986) (13)
- Visualizing Magnetic Structure in 3D Nanoscale Ni-Fe Gyroid Networks. (2020) (13)
- Ferromagnetic resonance in nanoscale CoFeB/MgO magnetic tunnel junctions (2015) (13)
- 12.1 An FPGA-Accelerated Fully Nonvolatile Microcontroller Unit for Sensor-Node Applications in 40nm CMOS/MTJ-Hybrid Technology Achieving 47.14μW Operation at 200MHz (2019) (13)
- Ferromagnetic semiconductor heterostructures (2004) (12)
- Electrically defined ferromagnetic nanodots. (2010) (12)
- Design of a Compact Nonvolatile Four-Input Logic Element Using a Magnetic Tunnel Junction and Metal–Oxide–Semiconductor Hybrid Structure (2012) (12)
- Tunnel Magnetoresistance Properties of Double MgO-Barrier Magnetic Tunnel Junctions With Different Free-Layer Alloy Compositions and Structures (2011) (12)
- Characterization of spin–orbit torque-controlled synapse device for artificial neural network applications (2018) (12)
- Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches (2014) (12)
- Dual-band photodetectors based on interband and intersubband transitions (2001) (12)
- Above room-temperature operation of InAs∕AlGaSb superlattice quantum cascade lasers emitting at 12μm (2007) (12)
- Magnetization Reversal by Field and Current Pulses in Elliptic CoFeB/MgO Tunnel Junctions With Perpendicular Easy Axis (2016) (12)
- Monte Carlo simulation of reentrant reflection high-energy electron diffraction intensity oscillation observed during low-temperature GaAs growth (1999) (12)
- Magnetic anisotropy in (Ga,Mn)As probed by magnetotransport measurements (2006) (12)
- A strong anisotropy of spin dephasing time of quasi-one dimensional electron gas in modulation-doped GaAs/AlGaAs wires (2013) (12)
- Spin-Pumping-Free Determination of Spin-Orbit Torque Efficiency from Spin-Torque Ferromagnetic Resonance (2019) (12)
- Theory of relaxation time of stochastic nanomagnets (2021) (12)
- Domain-wall-motion cell with perpendicular anisotropy wire and in-plane magnetic tunneling junctions (2012) (12)
- Submicrometer Hall Sensors for Superparamagnetic Nanoparticle Detection (2007) (12)
- Intersubband optical transitions in ZnO-based quantum wells grown by plasma-assisted molecular beam epitaxy (2009) (11)
- Magnetic anisotropy in a ferromagnetic (Ga,Mn)Sb thin film (2010) (11)
- CoFeB Inserted Perpendicular Magnetic Tunnel Junctions with CoFe/Pd Multilayers for High Tunnel Magnetoresistance Ratio (2009) (11)
- High-throughput synthesis and characterization of Mg1−xCaxO films as a lattice and valence-matched gate dielectric for ZnO based field effect transistors (2006) (11)
- Spin precession of holes in wurtzite GaN studied using the time-resolved Kerr rotation technique (2005) (11)
- A Common Energy Reference for DX Centers and EL2 Levels in III–V Compound Semiconductors (1986) (11)
- Low-current domain wall motion MRAM with perpendicularly magnetized CoFeB/MgO magnetic tunnel junction and underlying hard magnets (2013) (11)
- Electric-field effect on the easy cone angle of the easy-cone state in CoFeB/MgO investigated by ferromagnetic resonance (2018) (11)
- CoFeB/MgO based perpendicular magnetic tunnel junctions with stepped structure for symmetrizing different retention times of “0” and “1” information (2011) (11)
- Anodic oxide gate a-Si:H MOSFET (1983) (11)
- Stack Structure Dependence of Magnetic Properties of PtMn/[Co/Ni] Films for Spin-Orbit Torque Switching Device (2017) (11)
- SPRAM with large thermal stability for high immunity to read disturbance and long retention for high-temperature operation (2006) (11)
- Magnetic and Free-Layer Properties of MgO/(Co)FeB/MgO Structures: Dependence on CoFeB Composition (2017) (11)
- A computer simulation of the recombination process at compound semiconductor surfaces and hetero-interfaces (1990) (11)
- A two-transistor bootstrap type selective device for spin-transfer-torque magnetic tunnel junctions (2014) (11)
- Dependence of electron mobility on spacer thickness and electron density in modulation-doped Ga0.47In0.53As/Al0.48In0.52As heterojunctions (1983) (11)
- Design of an energy-efficient 2T-2MTJ nonvolatile TCAM based on a parallel-serial-combined search scheme (2014) (11)
- Photoluminescence Study of InAs Quantum Dots and Quantum Dashes Grown on GaAs(211)B (1997) (11)
- Damping constant in a free layer in nanoscale CoFeB/MgO magnetic tunnel junctions investigated by homodyne-detected ferromagnetic resonance (2016) (11)
- a-Si:H MIS position sensitive detector by anodic oxidation processes (1983) (11)
- Effect of spin Hall torque on current-induced precessional domain wall motion (2014) (11)
- Domain wall dynamics driven by spin transfer torque and the spin–orbit field (2012) (11)
- Spin injection from a ferromagnetic electrode into InAs surface inversion layer (2002) (11)
- Surface electrical breakdown with white-light emission on semi-insulating GaAs substrates (1984) (10)
- Ferromagnetic semiconductors for spintronics (2006) (10)
- Ion Beam Analysis of Molecular Beam Epitaxy InAlAs / InGaAs Layer Structures (1981) (10)
- Correlation of anomalous Hall effect with structural parameters and magnetic ordering in Mn3+xSn1−x thin films (2021) (10)
- Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations Under Field-Assistance-Free Condition (2020) (10)
- Direct measurement of current-induced fieldlike torque in magnetic tunnel junctions (2009) (10)
- Advances in spintronics devices for microelectronics — From spin-transfer torque to spin-orbit torque (2014) (10)
- Ferromagnetic (Ga, Mn)As and its heterostructures (1998) (10)
- Self-organized (In, Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates (1998) (10)
- Mobility dependence of electron spin relaxation time in n-type InGaAs/InAlAs multiple quantum wells (2000) (10)
- Challenge of MOS/MTJ-hybrid nonvolatile logic-in-memory architecture in dark-silicon era (2014) (10)
- Superlattice and multilayer structures based on ferromagnetic semiconductor (Ga,Mn)As (1998) (10)
- Magnetic domain-wall creep driven by field and current in Ta/CoFeB/MgO (2017) (10)
- Growth and properties of (Ga, Mn)As on Si (100) substrate (2002) (10)
- Control of ZnO (000$ \bar 1$)/Al2O3 (11$ \bar 2$0) surface morphologies using plasma‐assisted molecular beam epitaxy (2006) (10)
- Ferromagnetic semiconductors for spin electronics (2002) (10)
- Electric Field Effect on the Magnetic Properties of III–V Ferromagnetic Semiconductor (In,Mn)As and ((Al),Ga,Mn)As (2003) (10)
- Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing (2015) (10)
- Spin-dependent properties of ferromagnetic/nonmagnetic GaAs heterostructures (2001) (10)
- Studies on Static Noise Margin and Scalability for Low-Power and High-Density Nonvolatile SRAM using Spin-Transfer-Torque (STT) MTJs (2011) (10)
- Domain wall creep in (Ga,Mn)As (2010) (10)
- Time and spatial evolution of spin–orbit torque-induced magnetization switching in W/CoFeB/MgO structures with various sizes (2018) (9)
- Spin-transfer-torque magnetoresistive random access memory (STT-MRAM) technology (2014) (9)
- Hydrogenated amorphous carbon films deposited by low‐frequency plasma chemical vapor deposition at room temperature (1989) (9)
- Hall Effect and Magnetoresistance in P-Type Ferromagnetic Semiconductors (2003) (9)
- Coherent Manipulation of Nuclear Spins in Semiconductors with an Electric Field (2013) (9)
- Electrical Properties of Silicon Nitride (1991) (9)
- Monolithic Integration of GaAs Photoconductive Detectors and MESFETs with Distributed Coupling to Optical Fibers (1984) (9)
- Plasma process induced physical damages on multilayered magnetic films for magnetic domain wall motion (2014) (9)
- Power-gated 32 bit microprocessor with a power controller circuit activated by deep-sleep-mode instruction achieving ultra-low power operation (2015) (9)
- Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage (2020) (9)
- Design and fabrication of a perpendicular magnetic tunnel junction based nonvolatile programmable switch achieving 40% less area using shared-control transistor structure. (2014) (9)
- Electrical Resistivity of Chromium Alloys (1967) (9)
- Magnetization reversal of iron nanoparticles studied by submicron Hall magnetometry (2003) (8)
- InAs and (In,Mn)As nanostructures grown on GaAs(100), (211)B, and (311)B substrates (1999) (8)
- Reversal of domain wall chirality with ferromagnet thickness in W/(Co)FeB/MgO systems (2019) (8)
- Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer (2014) (8)
- Magnetic Anisotropy Modulation in Ta/ CoFeB/ MgO Structure by Electric Fields (2011) (8)
- Electron spin dynamics in InGaAs quantum wells (2004) (8)
- Schottky-Barrier Properties of Nearly-Ideal (n ≃1) Al Contacts on MBE- and Heat Cleaned-GaAs Surfaces (1981) (8)
- Electrical endurance of Co/Ni wire for magnetic domain wall motion device (2013) (8)
- Scalability and wide temperature range operation of spin-orbit torque switching devices using Co/Pt multilayer nanowires (2018) (8)
- Midgap states in metalorganic vapor phase epitaxy grown AlxGa1−xAs (1990) (8)
- InAs-based quantum cascade light emitting structures containing a double plasmon waveguide (2002) (8)
- Non-destructive characterization of electrical uniformity in semi-insulating GaAs substrates by microwave photoconductance technique (1984) (8)
- Current-driven magnetization reversal in exchange-biased spin-valve nanopillars (2005) (8)
- A compact low-power nonvolatile flip-flop using domain-wall-motion-device-based single-ended structure (2014) (8)
- Magnetotunneling spectroscopy of resonant tunneling diode using ferromagnetic (Ga,Mn)As (1998) (8)
- Influence of Substrate Temperature on the Growth of AlGaAs/GaAs Quantum Well Heterostructures by Organometallic Vapor Phase Epitaxy (1983) (8)
- ESR study of Mn doped II–VI and III–V DMS (1998) (8)
- Origin of variation of shift field via annealing at 400°C in a perpendicular-anisotropy magnetic tunnel junction with [Co/Pt]-multilayers based synthetic ferrimagnetic reference layer (2017) (8)
- Current-driven switching of exchange biased spin-valve giant magnetoresistive nanopillars using a conducting nanoprobe (2004) (8)
- Anomalous stability of ν = 1 bilayer quantum Hall state (1997) (8)
- Molecular‐beam epitaxy growth of GaAs/InAs structures on (001)InP by alternating III/V fluxes (1988) (8)
- InGaAs enhancement-mode MISFETs using double-layer gate insulator (1982) (8)
- Current-induced magnetization switching in a nano-scale CoFeB-MgO magnetic tunnel junction under in-plane magnetic field (2017) (7)
- A Ferromagnetic III-V Semiconductor: (Ga,Mn)As (2001) (7)
- A 1-Mb STT-MRAM with zero-array standby power and 1.5-ns quick wake-up by 8-b fine-grained power gating (2013) (7)
- Temperature dependence of in-plane magnetic anisotropy and anisotropic magnetoresistance in (Ga,Mn)As codoped with Li (2016) (7)
- Sigmoidal curves of stochastic magnetic tunnel junctions with perpendicular easy axis (2021) (7)
- Control of magnetization reversal in ferromagnetic semiconductors by electrical means (2004) (7)
- Material Stack Design With High Tolerance to Process-Induced Damage in Domain Wall Motion Device (2014) (7)
- Electric field dependence of intersubband transitions in single quantum wells (1997) (7)
- Hole concentration dependence of the Curie temperature of (Ga,Mn)Sb in a field-effect structure (2013) (7)
- MgO/CoFeB/Ta/CoFeB/MgO recording structure with low intrinsic critical current and high thermal stability (2014) (7)
- Electrical time-domain observation of magnetization switching induced by spin transfer in magnetic nanostructures (invited) (2008) (7)
- Preface to Special Topic: New Physics and Materials for Neuromorphic Computation (2018) (7)
- Current-Induced Magnetization Switching of CoFeB/Ta/[Co/Pd (Pt)]-Multilayers in Magnetic Tunnel Junctions With Perpendicular Anisotropy (2016) (7)
- Charge-discharge dynamics of disorder induced gap state continuum at compound semiconductor-insulator interfaces (1988) (7)
- Electrical and optical characteristics of InP enhancement mode metal/insulator/semiconductor field effect transistors with a novel anodic double-layer gate insulator (1983) (7)
- Effect of barrier width on the performance of quantum well infrared photodetector (2001) (7)
- TMR Design Methodology for SPin-Transfer Torque RAM (SPRAM) with Nonvolatile and SRAM Compatible Operations (2008) (7)
- Non-Destructive Determination of Cr Concentration Distribution in Cr Doped Semi-Insulating GaAs Substrates (1982) (7)
- Magnetoresistive Random Access Memory with Spin Transfer Torque Write (Spin RAM) - Present and Future - (2011) (7)
- Design of a Process-Variation-Aware Nonvolatile MTJ-Based Lookup-Table Circuit (2010) (7)
- Complementary 5T-4MTJ nonvolatile TCAM cell circuit with phase-selective parallel writing scheme (2014) (7)
- Photoemission Spectroscopy and X-ray Absorption Spectroscopy Studies of the Superconducting Pyrochlore Oxide Cd2Re2O7 (2006) (6)
- Anodic Oxidation for Enhancement of Fabrication Yield and Efficiency of Amorphous Silicon Solar Cells (1988) (6)
- Demonstration of Yield Improvement for On-Via MTJ Using a 2-Mbit 1T-1MTJ STT-MRAM Test Chip (2016) (6)
- (In,Ga)As gated-vertical quantum dot with an Al2O3 insulator (2007) (6)
- Double Free-Layer Magnetic Tunnel Junctions for Probabilistic Bits (2020) (6)
- In situ Auger electron spectroscopy of carbon transient behavior on GaAs surfaces exposed to trimethylgallium (1993) (6)
- Fabrication of a magnetic-tunnel-junction-based nonvolatile logic-in-memory LSI with content-aware write error masking scheme achieving 92% storage capacity and 79% power reduction (2017) (6)
- Dependence of magnetic properties of MgO/CoFeB/Ta stacks on CoFeB and Ta thicknesses (2015) (6)
- Free Carrier Profile Synthesis in MOCVD Grown GaAs by `Atomic-Plane' Doping (1984) (6)
- Magnetic Properties of the hcp Iron-Ruthenium Alloys (1968) (6)
- 32-Mb 2T1R SPRAM with localized bi-directional write driver and ‘1’/‘0’ dual-array equalized reference cell (2009) (6)
- Pulse-width and magnetic-field dependences of current-induced magnetization switching in a (Ga,Mn)As magnetic tunnel junction (2006) (6)
- Wide operational margin capability of 1 kbit spin-transfer-torque memory array chip with 1-PMOS and 1-bottom-pin-magnetic-tunnel-junction type cell (2014) (6)
- Domain wall resistance in perpendicularly magnetized (Ga,Mn)As (2007) (6)
- Thermally Activated Longitudinal Optical Phonon Scattering of a 3.8 THz GaAs Quantum Cascade Laser (2009) (6)
- Thermal conversion mechanism in semi‐insulating GaAs (1979) (6)
- Analysis of single-event upset of magnetic tunnel junction used in spintronic circuits caused by radiation-induced current (2014) (5)
- Free- and reference-layer magnetization modes versus in-plane magnetic field in a magnetic tunnel junction with perpendicular magnetic easy axis (2016) (5)
- Spin degree of freedom in ferromagnetic semiconductor heterostructures (2003) (5)
- Effect of substrate temperature on the properties of heavily Mn-doped GaAs (2007) (5)
- Temperature dependence of the energy barrier in X/1X nm shape-anisotropy magnetic tunnel junctions (2021) (5)
- Properties of (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As magnetic trilayer structures (2001) (5)
- Stack structure and temperature dependence of spin-orbit torques in heterostructures with antiferromagnetic PtMn (2019) (5)
- Observation of magnetic domain-wall dynamics transition in Co/Ni multilayered nanowires (2012) (5)
- Highly-scalable disruptive reading and restoring scheme for Gb-scale SPRAM and beyond (2011) (5)
- 2Mb SPRAM Design: Bi-Directional Current Write and Parallelizing-Direction Current Read Schemes Based on Spin-Transfer Torque Switching (2007) (5)
- Gate voltage dependence of nuclear spin relaxation in an impurity-doped semiconductor quantum well (2010) (5)
- Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact (2015) (5)
- Localized precessional mode of domain wall controlled by magnetic field and dc current (2015) (5)
- Write-error rate of nanoscale magnetic tunnel junctions in the precessional regime (2019) (5)
- Surface electrical breakdown and leakage current on semi-insulating InP (1985) (5)
- A 500ps/8.5ns Array Read/Write Latency 1Mb Twin 1T1MTJ STT-MRAM designed in 90nm CMOS/40nm MTJ Process with Novel Positive Feedback S/A Circuit (2014) (5)
- Electrical Curie temperature modulation in (Ga,Mn)As field-effect transistors with Mn composition from 0.027 to 0.200 (2008) (5)
- Multidomain Memristive Switching of Pt38Mn62/[Co/Ni]n Multilayers (2020) (5)
- SPRAM (SPin-transfer torque RAM) Technology for Green IT World (2008) (5)
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- Spin injection with three terminal device based on (Ga,Mn)As/n+-GaAs tunnel junction (2006) (5)
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- Mid-infrared intersubband electroluminescence in InAs/GaSb/AlSb type-II cascade structures (2000) (5)
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- Complex switching behavior of magnetostatically coupled single-domain nanomagnets probed by micro-Hall magnetometry (2020) (5)
- Non-linear variation of domain period under electric field in demagnetized CoFeB/MgO stacks with perpendicular easy axis (2018) (5)
- Mid-infrared intersubband electroluininescence in InAs/AlSb cascade structures (1999) (5)
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- Electrical Manipulation of Magnetization Reversal in a (2003) (4)
- Effect of GaAs Intermediary Layer Thickness on the Properties of (Ga,Mn)As Tri-Layer Structures (2006) (4)
- Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions (2007) (4)
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- Direct mapping of photoexcited local spins in a modulation-doped GaAs/AlGaAs wires (2013) (4)
- Chapter 5 Spintronic Properties of Ferromagnetic Semiconductors (2008) (4)
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- Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit (2009) (4)
- Current-induced domain wall motion in magnetic nanowires with various widths down to less than 20 nm (2016) (4)
- In-plane anisotropy of a nano-scaled magnetic tunnel junction with perpendicular magnetic easy axis (2015) (4)
- Temperature dependence of intrinsic critical current in perpendicular easy axis CoFeB/MgO magnetic tunnel junctions (2021) (4)
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- Making Nonmagnetic Semiconductors Ferromagnetic H (2010) (3)
- On the influence of nanometer-thin antiferromagnetic surface layer on ferromagnetic CrO2 (2012) (3)
- Spintronics - from materials through devices to circuits - (2006) (3)
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- Electric-field effects on magnetic properties of molecular beam epitaxially grown thin (Ga,Mn)Sb layers (2014) (3)
- Temperature dependence of ferromagnetic resonance spectra of permalloy on (Bi1−xSbx)2Te3 (2018) (3)
- Probing edge condition of nanoscale CoFeB/MgO magnetic tunnel junctions by spin-wave resonance (2020) (3)
- Band-tail shape and transport near the metal-insulator transition in Si-doped (2010) (3)
- Fabrication of a Standby-Power-Free TMR-based Nonvolatile Memory-in-Logic Circuit Chip with a Spin-Injection Write Scheme (2008) (3)
- Use of analog spintronics device in performing neuro-morphic computing functions (2017) (3)
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- Beyond MRAM: Nonvolatile Logic???in???Memory VLSI (2016) (2)
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- Challenge of MTJ-based nonvolatile logic-in-memory architecture for ultra low-power and highly dependable VLSI computing (2015) (2)
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- Electrical Electron Spin Injection with a p+-(Ga,Mn)As/n+-GaAs Tunnel Junction (2003) (2)
- GaAs and In_ Ga_ As MIS Structures Having an Ultrathin Pseudomorphic Interface Control Layer of Si Prepared by MBE : Surfaces, Interfaces and Films (1988) (2)
- Strain dependence of nuclear spin coherence in a (110)GaAs/AlGaAs quantum well (2014) (2)
- MAGNETOTRANSPORT AND MAGNETIC PROPERTIES OF (GA, MN)AS AND ITS HETEROSTRUCTURES (1998) (2)
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- Surface morphologies of III-V based magnetic semiconductor (Ga,Mn)As grown by molecular beam epitaxy (2000) (2)
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- Interlayer quantum coherence and anomalous stability of ν=1 bilayer quantum Hall state (1998) (2)
- Coherent magnetization reversal of a cylindrical nanomagnet in shape-anisotropy magnetic tunnel junctions (2021) (2)
- Stochastic behavior-considered VLSI CAD environment for MTJ/MOS-hybrid microprocessor design (2016) (2)
- Advancements in spintronics (2017) (2)
- Simultaneous lasing of interband and intersubband transitions in InAs∕AlSb quantum cascade laser structures (2008) (2)
- CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy for CMOS Logic Integration (2010) (2)
- Magnetotransport properties of all semiconductor (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As tri-layer structures (1998) (2)
- Studies on read-stability and write-ability of fast access STT-MRAMs (2014) (2)
- Experimental evaluation of simulated quantum annealing with MTJ-augmented p-bits (2022) (2)
- Fabrication and characterization of sub-micron scale hall devices from 2-dimensional electron gas at the heterostrutcure of GaAs/AlGaAs (2018) (2)
- Phase Transition in the n 5 2 Bilayer Quantum Hall State (1998) (2)
- A Compact and Ultra-Low-Power STT-MRAM-Based Associative Memory for Nearest Neighbor Search with Full Adaptivity of Template Data Format Employing Current-Mode Similarity Evaluation and Time-Domain Minimum Searching (2016) (2)
- Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits (2009) (2)
- Temperature dependence of lattice parameter of (Ga,Mn)As on GaAs substrate (2015) (2)
- Properties of Perpendicular-Anisotropy Magnetic Tunnel Junctions Fabricated over The Cu Via (2014) (2)
- Can ZnO Eat Market in Optoelectronic Applications (2000) (2)
- Semiconductors. Toward functional spintronics. (2001) (2)
- Giant tunneling magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junction with a synthetic ferrimagnetic pin layer annealed at and above 400ǬC (2006) (2)
- Influence of interface bonds and buffer materials on optical properties of InAs/AlSb quantum wells grown on GaAs substrates (2000) (2)
- X-ray diffraction study of InAs/AlSb interface bonds grown by molecular beam epitaxy (1999) (2)
- Publisher Correction: Spin transport and spin torque in antiferromagnetic devices (2019) (2)
- Spin-transfer switching in magnetic tunnel junctions with synthetic ferri-magnetic free layer (2010) (2)
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- Nanometer-thin L10-MnAl film with B2-CoAl underlayer for high-speed and high-density STT-MRAM: Structure and magnetic properties (2022) (2)
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- A Power-gated 32bit MPU with a Power Controller Circuit Activated by Deep-sleep-mode Instruction Achieving Ultra-low Power Operation (2014) (2)
- Kinetics and mechanism of atomic layer epitaxy of GaAs using trimethylgallium (1994) (2)
- Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits (2012) (2)
- MBE growth of InP using polycrystalline InP as phosphorus source (1990) (2)
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- Semiconductor spintronics using ferromagnetic semiconductor heterostructures (2002) (1)
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- Magnetic tunnel junction for magnetoresistive random access memory and beyond (2012) (1)
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- Properties of (Ga,Mn)As codoped with Li (2014) (1)
- High-resolution three-dimensional imaging of topological textures in single-diamond networks (2023) (1)
- Intersubband exchange interaction induced by optically excited electron spins in GaAs/AlGaAs quantum wells (2009) (1)
- Publisher’s Note: “Magnetization dynamics of a CrO2 grain studied by micro-Hall magnetometry” [Appl. Phys. Lett. 97, 042507 (2010)] (2010) (1)
- Electrical properties of the patterned Co/Cu/Co sub-micron dots using a probe contact (2004) (1)
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- Fast Switching Down to 3.5 ns in Sub-5-nm Magnetic Tunnel Junctions Achieved by Engineering Relaxation Time (2021) (1)
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- Detection of local electron and nuclear spin dynamics by time-resolved Kerr microscopy (2010) (1)
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- Characterisation of Al/AlInAs/GaInAs heterostructures (1981) (1)
- A few-electron vertical In0.56Ga0.44As quantum dot with an insulating gate (2007) (1)
- Demonstration of a Nonvolatile Processor Core Chip with Software-Controlled Three-Terminal MRAM Cells for Standby-Power Critical Applications (2013) (1)
- External-Field-Robust Stochastic Magnetic Tunnel Junctions Using a Free Layer with Synthetic Antiferromagnetic Coupling (2022) (1)
- Anodic oxidation of compound semiconductors and the electrical properties of interfaces. (1985) (1)
- Magnetic domain structures of (Ga,Mn)As investigated by scanning Hall probe microscopy (2000) (1)
- Carrier concentration in selectively doped n-AlGaAs/GaAs single heterojunctions (1990) (1)
- Spin-Polarized Current Injection in Ferromagnetic Semiconductor Heterostructure (2000) (1)
- Reflection electron diffraction intensity oscillation during molecular beam epitaxial growth of (GaAs)n/(InAs)n superlattice semiconductor (1986) (1)
- Adsorption of carbon-related species onto GaAs(001), (011), and (111) surfaces exposed to trimethylgallium (1994) (1)
- Three-terminal spintronics memory devices with perpendicular anisotropy (2015) (1)
- Vertical-Electrical-Field-Induced Control of the Exciton Fine Structure Splitting in GaAs Island Quantum Dots for the Generation of Polarization-Entangled Photons (2012) (1)
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- MTJ-based nonvolatile logic LSI for ultra low-power and highly dependable computing (2018) (1)
- Probabilistic computing based on spintronics technology (2020) (1)
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- Studies on Selective Devices for Spin-Transfer-Torque Magnetic Tunnel Junctions (2013) (0)
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- Spintronics-based Logic Integrated Circuits (2014) (0)
- International Symposium on X-ray Synchrotron Radiation and Advanced Science & Technology (1990) (0)
- CoFeB/MgO/CoFeB Magnetic Tunnel Junctions with Low Resistance-Area Product and High Magnetoresistance (2009) (0)
- Spin control and spin coherence in semiconductors (2001) (0)
- Spin-Polarised Electron Transport across an Abrupt or Partially Intermixed Fe/GaAs(001) Interface (2014) (0)
- Analog spin-orbit torque switching for neuromorphic application (2018) (0)
- High-resolution Photoemission Study of Cd2Re2O7 (2002) (0)
- MOCVD GROWTH AND TRANSPORT INVESTIGATION OF TWO-DIMENSIONAL ELECTRON GAS IN ALGAN/GAN HETEROSTRUCTURES ON SAPPHIRE SUBSTRATES (1999) (0)
- MEASUREMENT OF NANOSECOND-SCALE SPIN-TRANSFER TORQUE MAGNETIZATION SWITCHING (2009) (0)
- Electrical Control of the Magnetic Properties in (Ga,Mn)As Channel in Electric Double Layer Transistor (2009) (0)
- Strategy of STT-MRAM Cell Design and Its Power Gating Technique for Low-Voltage and Low-Power Cache Memories (2013) (0)
- A semiconductor GMR device [InAlAs-InAs] (2001) (0)
- Magnetic Properties of III–V Ferromagnetic Semiconductor (Ga,Mn)As (2002) (0)
- 2-2 Recent Trends for Spin-transfer Torque Magnetic Memories, which Break through the Limitation of Silicon Nonvolatile Technology(2. The Forefront of Non-volatile Memory Technology, Cutting-edge Device Technologies in Globally Competitive Fields) (2012) (0)
- Dependence of switching current on out-of-plane field in CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis at low temperature (2017) (0)
- Electric-field effect on domain structure in MgO/CoFeB/Ta (2016) (0)
- Current-Induced Torques in Magnetic Materials (2012) (0)
- Antiferromagnet/Ferromagnet Heterostructures for Artificial Neurons and Synapses (2019) (0)
- [JSAP Young Scientist Award Speech] Characterizing Analogue Spin-Orbit Torque Devices for Artificial Neural Networks (2017) (0)
- Electrical Control of Magnetism in Ferromagnetic Semiconductors for Spintronics (2004) (0)
- Surface Kinetics and Mechanism of Atomic Layer Epitaxy of GaAs Using Trimethylgallium (1999) (0)
- Magneto-transport properties of In0.56Ga0.44As gated-vertical quantum dot based on a metal-insulator-semiconductor structure (2007) (0)
- Spin-orbit torque switching and thermal stability of nanoscale Co/Pt multilayers over a wide range of temperature (2018) (0)
- Novel 2step Writing Method for STT-RAM to Improve Switching Probability and Write Speed (2011) (0)
- Electric‐Field Modulation of Curie Temperature in (Ga, Mn)As Field‐Effect Transistor Structures with Varying Channel Thickness and Mn Compositions (2010) (0)
- Electric-field effect on stiffness constant investigated by spin-wave resonance in nanoscale MgO/CoFeB magnetic tunnel junctions (2017) (0)
- Ferromagnetism and Heterostructures of III-V Magnetic Semiconductors (2000) (0)
- Extended harmonic Hall measurement of spin-orbit torque efficiencies in antiferromagnet/ferromagnet heterostructures (2018) (0)
- Latency 1 Mb Twin 1 T 1 MTJ STT-MRAM designed in 90 nm CMOS / 40 nm MTJ Process with Novel Positive Feedback S / A Circuit (2014) (0)
- Magnetic order in nanoscale gyroid networks (2023) (0)
- Erratum: “Evidence of a reduction reaction of oxidized iron/cobalt by boron atoms diffused toward naturally oxidized surface of CoFeB layer during annealing” [Appl. Phys. Lett. 106, 142407 (2015)] (2015) (0)
- Wide Operational Margin Capability of 1kbit STT-MRAM Array Chip with 1-PMOS and 1-Bottom-Pin-MTJ Type Cell (2013) (0)
- Above room-temperature operation of InAs/AlSb quantum cascade lasers (2007) (0)
- [Isamu Akasaki Award Speech] From AlInAs/GaInAs to Ferromagnetic Semiconductor GaMnAs (2015) (0)
- Growth and Electron Trap Characterization of GaAs by Molecular Beam Epitaxy (1985) (0)
- Al2O3/Native Oxide Double-Layer MIS Structure for InP MISFET IC's (1984) (0)
- 0 10 92 45 v 1 1 3 Se p 20 01 Ferromagnetism of magnetic semiconductors — Zhang-Rice limit (0)
- Thermal stability of non-collinear antiferromagnetic Mn3Sn nanodot (2023) (0)
- Current-induced domain wall motion in ferromagnetic semiconductors (2007) (0)
- Dielectric Breakdown in MgO-barrier Magnetic Tunnel Junctions with a CoFeB based Synthetic Ferrimagnetic Recording Layer (2009) (0)
- Spin-orbit torque induced switching of antiferromagnet/non-magnet metallic structure (2019) (0)
- Abstract for an Invited Paper for the MAR05 Meeting of The American Physical Society Electrical Control of Magnetization in Semiconductors1 (2005) (0)
- The World of Spintronics (2007) (0)
- Edge state of nanoscale magnetic tunnel junctions investigated by spin-wave resonance (2019) (0)
- Giant tunnel-magnetoresistance in rf-sputter deposited CoFeB/MgO/CoFeB magnetic tunnel junctions (2006) (0)
- Spin dependence of the interlayer tunneling in double quantum wells in the quantum Hall regime (1998) (0)
- Device Application of Spin Electronics (2016) (0)
- Definition of Terms (1964) (0)
- Ultra-high frequency tunability in low-current and low-field spin-torque oscillators based on perpendicular magnetic tunnel junctions (2016) (0)
- Title Modeling and simulation of polycrystalline ZnO thin-film transistors (2018) (0)
- Material parameters and thermal stability of synthetic ferrimagnet free layers in magnetic tunnel junction nanopillars (2012) (0)
- Electron spin splitting effect in AlSb/InAs/AlSb quantm wells (2008) (0)
- Fast-neutron tolerance of perpendicular-anisotropy magnetic tunnel junctions with double-interface recording structure (2017) (0)
- Time-resolved measurement of spin-transfer-torque-induced magnetization switching in CoFeB-MgO magnetic tunnel junctions with perpendicular easy axis (2017) (0)
- Write-error rate of perpendicular-anisotropy CoFeB/MgO-based magnetic tunnel junction with different junction diameters (2018) (0)
- 1 Ferromagnetic III-V Semiconductors and Their Heterostructures (0)
- Submicrometer Hall sensors for detection of magnetic nanoparticles in biomolecular sensing (2006) (0)
- Atomic Layer Epitaxy and Surface Kinetics of GaAs Using Trimethylgallium ( Nucleayion and Growth Kinetics) (1994) (0)
- Mid-infrared InAs-based quantum cascade lasers (2005) (0)
- Characterization of GaAs regrowth interfaces grown by metal‐organic vapor phase epitaxy (1988) (0)
- Kobe University Repository : Kernel タイトル Tit le Photoemission Spectroscopy and X-ray Absorpt ion Spectroscopy Studies of the Superconduct ing Pyrochlore Oxide Cd 2 Re 2 O 7 著者 (2018) (0)
- Current Development Status and Future Challenges of Spin Torque Transfer MRAM Technology (Invited) (2008) (0)
- Far infrared absorption spectra in ferromagnetic Ga1-x Mn x As (2001) (0)
- Spin Dependent Phenomena in Magnetic and Non-Magnetic III-V's (1998) (0)
- Dependence of TMR Ratio on CoFeB Ferromagnetic Electrode Thickness for MgO Barrier Magnetic Tunnel Junctions (2007) (0)
- Magnetic Field Dependence of Quadrupoar Splitting and Nuclear Spin Coherence in a (110) GaAs/AlGaAs Quantum Well (2010) (0)
- Determining the bandtail shape of highly Si-doped Al$_{0.3}$Ga$_{0.7}$As for investigation as a spin transport channel (2010) (0)
- Properties of perpendicular-anisotropy magnetic tunnel junctions prepared by different MTJ etching process (2013) (0)
- ν=1 bilayer quantum Hall state at arbitrary electron distribution in a double quantum well (1998) (0)
- Anomalous Hall Effect and Anomalous Nernst Effect in Ga1-xMnxAs (2007) (0)
- InAs/AlGaSb quantum cascade lasers (2005) (0)
- Fine-Grain Power-Gating Scheme of a CMOS/MTJ-Hybrid Bit-Serial Ternary Content-Addressable Memory (2009) (0)
- Fine structure in magnetospectrum of vertical quantum dot (2008) (0)
- Quantum Hall effect of twodimensional electron gas in Al y Ga1−y As/Ga1−x In x As/GaAs pseudomorphic structures (2014) (0)
- Helicity-dependent photocurrent in a (110) GaAs quantum well stack (2013) (0)
- Excitation density dependence of zero-field precession of high mobility two-dimensional electron spins in GaAs/AlGaAs quantum well (2019) (0)
- Power-Aware Bit-Serial Binary Content-Addressable Memory Using Magnetic-Tunnel-Junction-Based Fine-Grained Power-Gating Scheme (2010) (0)
- a-Si:H MIS POSITION SENSITIVE DETECTORS. (1983) (0)
- Spin-orbit torque induced magnetization switching in W/CoFeB/MgO (2016) (0)
- Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator (2008) (0)
- Trimethylgallium Supply without the Use of Bubbling in GaAs Growth by Metalorganic Vapor Phase Epitaxy (1988) (0)
- Temperature Super Plastic Bulk Metallic Glasses (2007) (0)
- Magnetization dynamics and related phenomena in semiconductors with ferromagnetism (2019) (0)
- C 2 SPIN-ORBIT TORQUE SWITCHING DEVICES FOR HIGH-SPEED MEMORIES AND ARTIFICIAL SYNAPSES (2017) (0)
- 反強磁性体/強磁性体構造における磁場に無関係なスピン‐軌道トルク誘起磁化スイッチングの素子大きさ依存性 (2017) (0)
- Dzyaloshinskii-Moriya interaction in an antiferromagnet/ferromagnet heterostructure (2018) (0)
- Optimization of CoFeB Capping Layer Thickness for Characterization of Leakage Spot in MgO Tunneling Barrier of Magnetic Tunnel Junction (2015) (0)
- Publisher's Note: “Observation of boron diffusion in an annealed Ta/CoFeB/MgO magnetic tunnel junction with standing-wave hard x-ray photoemission” [Appl. Phys. Lett. 101, 202402 (2012)] (2013) (0)
- Advancements in Spintronics | NIST (2017) (0)
- C-V Characteristics of ZnO Thin-Film Field Effect Transistor Structures Formed on Glass Substrates (2000) (0)
- Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions (2018) (0)
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