Hongxing Jiang
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Nano-Photonics researcher
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Hongxing Jiangengineering Degrees
Engineering
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#2227
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Applied Physics
#617
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#637
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Electrical Engineering
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#816
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Engineering
Hongxing Jiang's Degrees
- Bachelors Electrical Engineering Tsinghua University
Why Is Hongxing Jiang Influential?
(Suggest an Edit or Addition)According to Wikipedia, Hongxing Jiang is a Chinese-American physicist and engineer working in the field of wide bandgap semiconductors and photonic devices. He is an original inventor of MicroLED. In 2000, the research team led by Hongxing Jiang and Jingyu Lin realized the operation of the first MicroLED and passive driving MicroLED microdisplay. In 2009, he and his colleagues at III-N Technology, Inc. and Texas Tech University patented and realized the first active driving high-resolution and video-capable microLED microdisplay in VGA format via heterogeneous integration of MicroLED array with CMOS active-matrix driver and the work was published in the following years. MicroLEDdisplay market expected to hit USD 24,307.4 million by 2027.
Hongxing Jiang's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Giant magnetoresistance in nonmultilayer magnetic systems. (1992) (1385)
- Deep ultraviolet photoluminescence of water-soluble self-passivated graphene quantum dots. (2012) (1379)
- Two-dimensional electronic excitations in self-assembled conjugated polymer nanocrystals (2000) (541)
- Deep ultraviolet to near-infrared emission and photoresponse in layered N-doped graphene quantum dots. (2014) (400)
- InGaN/GaN multiple quantum well solar cells with long operating wavelengths (2009) (348)
- III-nitride blue and ultraviolet photonic crystal light emitting diodes (2004) (327)
- Unique optical properties of AlGaN alloys and related ultraviolet emitters (2004) (299)
- Band structure and fundamental optical transitions in wurtzite AlN (2003) (291)
- Oscillatory superconducting transition temperature in Nb/Gd multilayers. (1995) (262)
- Time dependent theory for random lasers (2000) (259)
- Mg acceptor level in AlN probed by deep ultraviolet photoluminescence (2003) (246)
- III-Nitride full-scale high-resolution microdisplays (2011) (236)
- Structural phase behavior in II–VI semiconductor nanoparticles (1995) (214)
- High-resolution angle-resolved photoemission study of the Fermi surface and the normal-state electronic structure of Bi2Sr2CaCu2O8. (1990) (202)
- Quantum liquid versus electron solid around nu =1/5 Landau-level filling. (1990) (199)
- Giant superconducting anisotropy in Bi2Sr2Ca1Cu2O8+ delta. (1989) (198)
- Extraordinary Hall effect and giant magnetoresistance in the granular Co-Ag system. (1992) (194)
- InGaN/GaN multiple quantum well concentrator solar cells (2010) (188)
- Fundamental optical transitions in GaN (1996) (169)
- Temperature and compositional dependence of the energy band gap of AlGaN alloys (2005) (165)
- Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material (2011) (163)
- Nitride deep-ultraviolet light-emitting diodes with microlens array (2005) (161)
- Zero resistance at 107 K in the (Bi,Pb)-Ca-Sr-Cu oxide system. (1988) (161)
- 200nm deep ultraviolet photodetectors based on AlN (2006) (159)
- GaN microdisk light emitting diodes (2000) (158)
- Giant magnetoresistance in the granular Co-Ag system. (1992) (153)
- Optical and electrical properties of Mg-doped p-type AlxGa1−xN (2002) (150)
- Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys (2005) (149)
- Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction (2000) (148)
- Nitride micro-LEDs and beyond--a decade progress review. (2013) (142)
- Enhanced light extraction in III-nitride ultraviolet photonic crystal light-emitting diodes (2004) (139)
- Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys (2009) (138)
- Metastability and persistent photoconductivity in Mg‐doped p‐type GaN (1996) (136)
- Structure and Photoluminescence Study of TiO2 Nanoneedle Texture along Vertically Aligned Carbon Nanofiber Arrays (2008) (134)
- Nature of Mg impurities in GaN (1996) (131)
- III-nitride photonic crystals (2003) (131)
- Magnetic-field-driven destruction of quantum Hall states in a double quantum well. (1990) (131)
- Nucleation and initial growth phase of diamond thin films on (100) silicon. (1994) (128)
- Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells (2010) (128)
- Correlation between optoelectronic and structural properties and epilayer thickness of AlN (2007) (120)
- Time-resolved photoluminescence studies of AlxGa1−xN alloys (2000) (119)
- Photoluminescence studies of impurity transitions in AlGaN alloys (2006) (117)
- Mechanisms of band‐edge emission in Mg‐doped p‐type GaN (1996) (116)
- Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers (2012) (116)
- InGaN/GaN quantum well interconnected microdisk light emitting diodes (2000) (115)
- Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping (2003) (113)
- Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys (2005) (109)
- Thermoelectric properties of InxGa1−xN alloys (2008) (107)
- Correlation between optical and electrical properties of Mg-doped AlN epilayers (2006) (107)
- Persistent photoconductivity in a two-dimensional electron gas system formed by an AlGaN/GaN heterostructure (1997) (106)
- Polarization of III-nitride blue and ultraviolet light-emitting diodes (2005) (106)
- Hexagonal boron nitride for deep ultraviolet photonic devices (2014) (105)
- Hexagonal boron nitride epitaxial layers as neutron detector materials (2011) (105)
- Transport properties of highly conductive n-type Al-rich AlxGa1−xN(x⩾0.7) (2004) (102)
- III-nitride micro-emitter arrays: development and applications (2008) (99)
- Time-resolved photoluminescence studies of InGaN epilayers (1996) (92)
- Time-resolved photoluminescence studies of InxGa1−xAs1−yNy (2000) (92)
- Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures (2000) (91)
- Nature of deep center emissions in GaN (2010) (91)
- Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells (1998) (91)
- Optical and electrical properties of Al-rich AlGaN alloys (2001) (90)
- Recent developments of wide-bandgap semiconductor based UV sensors (2009) (89)
- Direct hydrogen gas generation by using InGaN epilayers as working electrodes (2008) (89)
- Band-edge photoluminescence of AlN epilayers (2002) (88)
- Synchrotron x-ray study of orientational order in single crystal C60 at room temperature. (1992) (88)
- A study of the Au/Ni ohmic contact on p-GaN (2000) (86)
- Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers (2003) (85)
- Polytypoid structure of Pb-modified Bi-Ca-Sr-Cu-O superconductor. (1988) (84)
- AlxGa1−xN/GaN band offsets determined by deep-level emission (2001) (83)
- Simulation study of reaction fronts. (1990) (82)
- Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes (1997) (82)
- Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics (2012) (81)
- AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers (2004) (80)
- GaN-based waveguide devices for long-wavelength optical communications (2003) (77)
- Anomalous transport properties in superconducting Nd1.85Ce0.15CuO4+/- delta. (1994) (77)
- Magnetotransport studies of the insulating phase around nu =1/5 Landau-level filling. (1991) (76)
- Band-edge exciton states in AlN single crystals and epitaxial layers (2004) (76)
- Thermodynamic signature of a two-dimensional metal-insulator transition (1999) (74)
- Electrical and optical properties of p-type InGaN (2009) (74)
- A Simplified Method of Making Flexible Blue LEDs on a Plastic Substrate (2015) (71)
- Achieving highly conductive AlGaN alloys with high Al contents (2002) (71)
- The origin of deep-level impurity transitions in hexagonal boron nitride (2015) (69)
- Development of microLED (2020) (67)
- Optical modes within III-nitride multiple quantum well microdisk cavities (1998) (67)
- Two-dimensional excitons in three-dimensional hexagonal boron nitride (2013) (67)
- Exciton localization in AlGaN alloys (2006) (66)
- Responses of soil respiration and its temperature/moisture sensitivity to precipitation in three sub (2013) (66)
- Electroluminescent properties of erbium-doped III-N light-emitting diodes (2004) (65)
- Growth of III-nitride photonic structures on large area silicon substrates (2006) (65)
- Optical properties of AlN and GaN in elevated temperatures (2004) (64)
- Excitonic recombination in GaN grown by molecular beam epitaxy (1995) (64)
- Realization of highly efficient hexagonal boron nitride neutron detectors (2016) (64)
- Fabrication of n-type nickel doped B5C1+δ homojunction and heterojunction diodes (1997) (61)
- Evidence of a Bose-glass transition in superconducting YBa2Cu3O7 single crystals with columnar defects. (1994) (61)
- Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition (2006) (60)
- Single phase InxGa1−xN(0.25≤x≤0.63) alloys synthesized by metal organic chemical vapor deposition (2008) (59)
- III-nitride ultraviolet light-emitting diodes with delta doping (2003) (59)
- OPTICAL RESONANCE MODES IN GAN PYRAMID MICROCAVITIES (1999) (59)
- Local atomic order and individual pair displacements of Fe46.5Ni53.5 and Fe22.5Ni77.5 from diffuse x-ray scattering studies. (1996) (59)
- Optical transitions in GaN/AlxGa1−xN multiple quantum wells grown by molecular beam epitaxy (1996) (57)
- Room temperature intrinsic optical transition in GaN epilayers: The band-to-band versus excitonic transitions (1997) (57)
- Transport anomalies in the lowest Landau level of two-dimensional electrons at half-filling. (1989) (55)
- Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells (1997) (55)
- Properties of Co-, Cr-, or Mn-implanted AlN (2003) (54)
- Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells (1997) (54)
- The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates (2009) (54)
- Fragmentation clusters formed in supercritical expansions of 4He. (1992) (54)
- Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360nm: Photoemission assessments (2008) (53)
- Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy (2015) (53)
- Photoluminescence studies of band‐edge transitions in GaN epitaxial layers grown by plasma‐assisted molecular beam epitaxy (1996) (53)
- Observation of ultrahigh critical current densities in high-Tc superconducting bridge constrictions. (1991) (52)
- Geometric structure and surface vibrations of Cu(001) determined by medium-energy ion scattering. (1991) (52)
- Suppression of thermal conductivity in InxGa1−xN alloys by nanometer-scale disorder (2013) (51)
- III-Nitride Semiconductors: Optical Properties I (2002) (51)
- Mechanism of enhanced luminescence in InxAlyGa1−x−yN quaternary epilayers (2002) (51)
- Heteroepitaxial diamond films on silicon (001): Interface structure and crystallographic relations between film and substrate. (1995) (50)
- Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications (2017) (50)
- Optical properties of GaN pyramids (1999) (49)
- Linewidths of excitonic luminescence transitions in AlGaN alloys (2001) (49)
- Optical resonance modes in InGaN/GaN multiple-quantum-well microring cavities (1999) (49)
- Neutral‐donor‐bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition (1995) (49)
- The origins of leaky characteristics of Schottky diodes on p-GaN (2003) (48)
- Comparison of optical transitions in InGaN quantum well structures and microdisks (2001) (47)
- Size dependence of III-nitride microdisk light-emitting diode characteristics (2001) (47)
- Effect of a crystal field on phase transitions in a spin-1 transverse Ising model. (2000) (47)
- Magnetic ordering of Sm in Sm2CuO4. (1992) (47)
- Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers (2014) (47)
- Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products (2015) (47)
- Band-edge transitions in hexagonal boron nitride epilayers (2012) (46)
- Erbium-Doped GaN Optical Amplifiers Operating at 1.54 Micrometers (2009) (46)
- Free excitonic transitions in GaN, grown by metal‐organic chemical‐vapor deposition (1996) (46)
- High-brightness organic double-quantum-well electroluminescent devices (2000) (45)
- Transport and localization in Nd2-xCexCuO4-y crystals at low doping. (1992) (45)
- Nitride microlens arrays for blue and ultraviolet wavelength applications (2003) (45)
- Ultraviolet photoluminescence from Gd-implanted AlN epilayers (2006) (45)
- Growth and photoluminescence studies of Al-rich AlN∕AlxGa1−xN quantum wells (2006) (44)
- Ultraviolet photoluminescence from ferromagnetic Fe-doped AlN nanorods (2007) (44)
- The origins of near band-edge transitions in hexagonal boron nitride epilayers (2016) (43)
- Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells (2012) (43)
- 1.54 μm emitters based on erbium doped InGaN p-i-n junctions (2010) (43)
- High mobility InN epilayers grown on AlN epilayer templates (2008) (43)
- Effect of well number on organic multiple-quantum-well electroluminescent device characteristics (1998) (42)
- Electron attachment to helium microdroplets: Creation induced magic? (1993) (42)
- AlN avalanche photodetectors (2007) (42)
- Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors (2007) (42)
- Annealing of dry etch damage in metallized and bare (-201) Ga2O3 (2017) (42)
- Origin of the significantly enhanced optical transitions in layered boron nitride (2012) (41)
- Photoluminescence studies of Si-doped AlN epilayers (2003) (41)
- Excitation dynamics of the 1.54μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition (2007) (41)
- Growth and optical properties of InxAlyGa1−x−yN quaternary alloys (2001) (41)
- Nature of optical transitions involving cation vacancies and complexes in AlN and AlGaN (2012) (41)
- Silicon doping dependence of highly conductive n-type Al0.7Ga0.3N (2004) (41)
- High quality AlN for deep UV photodetectors (2009) (41)
- Effects of plasma treatment on the Ohmic characteristics of Ti∕Al∕Ti∕Au contacts to n-AlGaN (2006) (40)
- Band structure of superlattice with graded interfaces (1987) (40)
- Excitonic luminescence linewidths in AlGaN alloys with high aluminum concentrations (2002) (40)
- Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates (2014) (40)
- Origin of background electron concentration in InxGa1-xN alloys (2011) (40)
- Determination of energy-band offsets between GaN and AlN using excitonic luminescence transition in AlGaN alloys (2006) (40)
- Persistent photoconductivity in Ga1−xInxNyAs1−y (1999) (40)
- Superconducting transition in Nb/Gd/Nb trilayers. (1996) (39)
- Correlation between biaxial stress and free exciton transition in AlN epilayers (2007) (39)
- Atomistic calculation of oxygen diffusivity in crystalline silicon. (1995) (39)
- Effects of the Wave Function Localization in AlInGaN Quaternary Alloys (2007) (39)
- The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films (1998) (39)
- Direct local epitaxy of diamond on Si(100) and surface-roughening-induced crystal misorientation (2000) (38)
- Photoresponsivity of ultraviolet detectors based on InxAlyGa1−x−yN quaternary alloys (2000) (38)
- Two-dimensional electron gas in AlGaN/GaN heterostructures (1997) (38)
- Collective plasmon excitations in graphene tubules. (1996) (37)
- Erbium-Doped AlInGaN Alloys as High-Temperature Thermoelectric Materials (2011) (36)
- Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector (1998) (36)
- Well-width dependence of the quantum efficiencies of GaN/AlxGa1−xN multiple quantum wells (2000) (36)
- Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing (2004) (36)
- Critical fluctuations and pinning effects on the vortex transport in superconducting Y-Ba-Cu-O single crystals. (1993) (35)
- Large-Scale Growth of High-Quality Hexagonal Boron Nitride Crystals at Atmospheric Pressure from an Fe–Cr Flux (2017) (35)
- Dynamics of a band‐edge transition in GaN grown by molecular beam epitaxy (1995) (35)
- Evolution of phase separation in In-rich InGaN alloys (2010) (35)
- Photoemission studies of the high-Tc superconductor Ba2YCu3O9- delta. (1987) (35)
- AlGaN∕GaN∕AlN quantum-well field-effect transistors with highly resistive AlN epilayers (2006) (35)
- Optical properties of the nitrogen vacancy in AlN epilayers (2004) (35)
- Possible origin of anisotropic resistive hysteresis in the vortex state of untwinned YBa2Cu3O7 single crystals. (1995) (35)
- Hexagonal boron nitride and 6H-SiC heterostructures (2013) (35)
- Threshold-field-ionization photoelectron spectroscopy and delayed forced autoionization of HCl. (1991) (34)
- Hexagonal boron nitride neutron detectors with high detection efficiencies (2018) (34)
- Si-Doped High Al-Content AlGaN Epilayers with Improved Quality and Conductivity Using Indium as a Surfactant (2008) (34)
- Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes (2002) (34)
- Unintentionally doped n-type Al0.67Ga0.33N epilayers (2005) (34)
- Electrical transport properties of Si-doped hexagonal boron nitride epilayers (2013) (34)
- Photoluminescence properties of AlN homoepilayers with different orientations (2008) (34)
- Layer-structured hexagonal (BN)C semiconductor alloys with tunable optical and electrical properties (2014) (34)
- Structure and magnetic properties of NdFeB thin films with Cr, Mo, Nb, Ta, Ti, and V buffer layers (2000) (33)
- Magnetothermal transport properties of granular Co-Ag solids. (1993) (33)
- Charge transfer from potassium into the t1g band of C60. (1994) (33)
- Optical properties of GaN/AlGaN multiple quantum well microdisks (1997) (33)
- Universality, critical dynamics, and vortex diffusion in amorphous Mo3Si films and YBa2Cu3O7 single crystals. (1993) (33)
- Effects of dimensional crossover on flux pinning in a model high-Tc superconductor: YBa2Cu3O7- delta /(PrxY1-x)Ba2Cu3O7- delta superlattices. (1992) (33)
- Persistent photoconductivity in II‐VI and III‐V semiconductor alloys and a novel infrared detector (1991) (33)
- High-order harmonic generation in atomic hydrogen at 248 nm: Dipole-moment versus acceleration spectrum. (1992) (33)
- Growth and photoluminescence studies of Zn-doped AlN epilayers (2006) (32)
- Growth and deep ultraviolet picosecond time-resolved photoluminescence studies of AlN/GaN multiple quantum wells (2001) (32)
- Temperature-Dependent Photoluminescence and Electron Field Emission Properties of AIN Nanotip Arrays (2009) (32)
- Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures (2002) (32)
- Experimental evidence for room-temperature intermetallic compound formation at the Pd/Al interface. (1989) (31)
- Thermoelectric Properties of In0.3Ga0.7N Alloys (2009) (31)
- Probing carbon impurities in hexagonal boron nitride epilayers (2017) (31)
- Structure determination of metastable epitaxial Cu layers on Ag(001) by glancing-incidence x-ray-absorption fine structure. (1991) (31)
- Full-scale self-emissive blue and green microdisplays based on GaN micro-LED arrays (2012) (31)
- Mg acceptor level in InN epilayers probed by photoluminescence (2007) (31)
- Magnetic anisotropy of high-Tc superconductors. (1990) (30)
- Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis (2014) (30)
- Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition (2007) (30)
- Origin and roles of oxygen impurities in hexagonal boron nitride epilayers (2018) (30)
- Effect of d-wave energy-gap symmetry on Raman shifts. (1993) (30)
- Bandgap and exciton binding energies of hexagonal boron nitride probed by photocurrent excitation spectroscopy (2016) (29)
- Time-resolved photoluminescence studies of an ionized donor-bound exciton in GaN (1999) (29)
- Diffuse x-ray scattering study of an oxygen-disordered tetragonal YBa2(Cu0.955Al0.045)3O7 crystal. (1991) (29)
- Oxygen-nickel bond length in Ni(111)-p(2 x 2)O determined by electron-energy-loss fine-structure spectroscopy. (1990) (29)
- Type-I-type-II transition of GaAs/AlAs short-period superlattices investigated by photoluminescence spectroscopy under hydrostatic pressure. (1989) (29)
- Resonant Raman scattering by crystal-violet molecules adsorbed on a smooth gold surface: Evidence for a charge-transfer excitation. (1986) (28)
- III-nitride-based planar lightwave circuits for long wavelength optical communications (2005) (28)
- Characterization of bulk hexagonal boron nitride single crystals grown by the metal flux technique (2014) (28)
- Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers (2010) (27)
- Optical transitions in Pr-implanted GaN (1999) (27)
- Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction (2001) (27)
- Imaginary part of the infrared conductivity of a dx2-y2 superconductor. (1996) (27)
- Coercitivity and its temperature dependence in NdFeB thin films with Cr, Mo, Ti, or Ta buffer layers (2000) (27)
- Strong-perturbation theory for impurities in semiconductors. (1987) (27)
- MOCVD growth of GaBN on 6H-SiC (0001) substrates (2000) (27)
- Variable-range hopping and positive magnetoresistance in insulating Y1-xPrxBa2Cu3O7 crystals. (1994) (26)
- Fate of the Delocalized States in a Vanishing Magnetic Field. (1995) (26)
- Toward achieving flexible and high sensitivity hexagonal boron nitride neutron detectors (2017) (26)
- Bonn potential and sd-shell nuclei. (1992) (25)
- Conduction properties of a new two-dimensional sliding charge-density wave. (1989) (25)
- Dry etching techniques for active devices based on hexagonal boron nitride epilayers (2013) (25)
- Thermoelectric power of Nd2-xCexCuO4 crystals. (1992) (25)
- Mode spacing ``anomaly'' in InGaN blue lasers (1999) (25)
- Transition metal ion implantation into AlGaN (2003) (25)
- Magnetic resonance of heavy-fermion superconductors and high-Tc superconductors. (1989) (25)
- Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31 (2003) (25)
- Upper-critical-field-temperature phase diagram of alkali-metal-intercalated C60 superconductors. (1992) (24)
- Wide bandgap light emitting materials and devices (2007) (24)
- Probing the relationship between structural and optical properties of Si-doped AlN (2010) (24)
- Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers (2009) (24)
- Synthesis and properties of Cd1−xMnxS diluted magnetic semiconductor ultrafine particles (1997) (24)
- Geometric structure of p(2 x 2)-S/Cu(001) determined by medium-energy ion scattering. (1990) (24)
- Surface conductivity for Au or Ag on Si(111). (1996) (24)
- Acceptor-bound exciton recombination dynamics in p-type GaN (1995) (23)
- Probing exciton-phonon interaction in AlN epilayers by photoluminescence (2009) (23)
- Study of the 18F(p, alpha )15O reaction at astrophysical energies using a 18F beam. (1995) (23)
- Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors (2016) (23)
- Collective effects of interface roughness and alloy disorder in InxGa1−xN/GaN multiple quantum wells (1998) (23)
- Current-injected 1.54μm light emitting diodes based on erbium-doped GaN (2008) (23)
- Three‐step growth method for high quality AlN epilayers (2012) (23)
- Meson exchange current contribution to K+-nucleus scattering. (1992) (22)
- Electrical and optical properties of Mg doped Al$_{0.7}$Ga$_{0.3}$N Alloys (2005) (22)
- Localized vibrational modes of carbon-hydrogen complexes in GaN (1999) (22)
- Scaling of vortex transport properties in high-temperature superconductors. (1992) (22)
- Vortex-solid melting and depinning in superconducting Y-Ba-Cu-O single crystals irradiated by 3-MeV protons. (1993) (22)
- Thermal and disorder fluctuations in anisotropic superconducting Nd1.85Ce0.15CuO4-x epitaxial films. (1992) (22)
- Strong-field effects of the one-dimensional hydrogen atom in momentum space. (1992) (21)
- III-Nitride Quantum Devices—Microphotonics (2003) (21)
- Charge carrier transport properties in layer structured hexagonal boron nitride (2014) (21)
- Sublimation growth of aluminum nitride crystals (2006) (21)
- High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors (2012) (20)
- Ion channeling in (Bi1.7Pb0.3)Sr2CaCu2Ox single crystals. (1990) (20)
- Time-resolved electroluminescence studies of III-nitride ultraviolet photonic-crystal light-emitting diodes (2004) (20)
- Step profiles predicted with the modified point-ion model for eight face-centered- and body-centered-cubic surfaces. (1987) (20)
- Boson structure in the quasiparticle density of states of superconductors with nodes in the gap. (1993) (20)
- Acceptor-bound exciton transition in Mg-doped AlN epilayer (2004) (20)
- Layer number dependent optical properties of multilayer hexagonal BN epilayers (2017) (20)
- Nature of exciton transitions in hexagonal boron nitride (2016) (20)
- Two-photon detachment of the negative chlorine ion. (1988) (20)
- Critical scaling of frequency-dependent magnetic susceptibility in YBa2Cu3O7 single crystals near the vortex-glass transition. (1994) (20)
- Excitation mechanisms of Er optical centers in GaN epilayers (2015) (20)
- Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength (2010) (19)
- Thermally stable Schottky contacts on n-type GaN using ZrB 2 (2006) (19)
- Dynamics of exciton transfer between the bound and the continuum states in GaAs-AlxGa1-xAs multiple quantum wells. (1990) (19)
- Diffusion quantum Monte Carlo calculation of the binding energy of positronium hydroxide. (1996) (19)
- Target dependence of K+-nucleus total cross sections. (1995) (19)
- Hall-effect studies of Y1-xPrxBa2Cu3O7 crystals. (1992) (19)
- Quantum well intermixing in GaInNAs'GaAs structures (2003) (19)
- Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys (2014) (19)
- Simulated healing of crystal surfaces. (1989) (18)
- Beryllium acceptor binding energy in AlN (2008) (18)
- Lattice relaxed impurity and persistent photoconductivity in nitrogen doped 6H-SiC (1992) (18)
- Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er (2008) (18)
- Crystal field analysis of rare-earth ions energy levels in GaN (2014) (18)
- Disorder-tuned transition between a quantum Hall liquid and Hall insulator. (1995) (18)
- Fabrication and optical studies of AlGaN/GaN quantum-well waveguides (2001) (18)
- Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides. (2013) (18)
- Effective-field renormalization-group study for the transverse Ising model in a quantum-spin system. (1989) (17)
- Strong green luminescence in quaternary InAlGaN thin films (2003) (17)
- Growth and optical studies of two-dimensional electron gas of Al-rich AlGaN/GaN heterostructures (2002) (17)
- Surface chemical and electronic properties of plasma‐treated n‐type Al0.5Ga0.5N (2007) (17)
- Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes (2014) (17)
- Carbon-rich hexagonal (BN)C alloys (2015) (17)
- Zone-folding effect on optical phonon in GaN'Al 0.2 Ga 0.8 N superlattices (2001) (17)
- Universal critical scaling of ac-vortex-transport properties in superconducting Y-Ba-Cu-O single crystals: From 1 to 90 kOe. (1993) (17)
- Surface effects in metal microclusters. (1987) (17)
- Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates (2011) (16)
- Propagation properties of light in AlGaN/GaN quantum-well waveguides (2001) (16)
- Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes (2013) (16)
- AlGaN and InAlGaN alloys : epitaxial growth optical and electrical properties, and applications (2002) (16)
- Excitonic transitions in GaAs-AlxGa1-xAs multiple quantum wells affected by interface roughness. (1989) (16)
- Giant discrete resistance fluctuations observed in normal-metal tunnel junctions. (1990) (16)
- Photomodulated transmission spectroscopy of the intersubband transitions in strained In1-xGaxAs/GaAs multiple quantum wells under hydrostatic pressure. (1991) (16)
- High sensitivity hexagonal boron nitride lateral neutron detectors (2019) (16)
- Semiconducting hexagonal boron nitride for deep ultraviolet photonics (2012) (16)
- Rayleigh mode in amorphous hydrogenated carbon films. (1991) (15)
- Effects of alloy disorder on the transport properties of AlxGa1−xN epilayers probed by persistent photoconductivity (2000) (15)
- Evidence for d-wave superconductivity in YBa2Cu3O7- delta from far-infrared conductivity. (1995) (15)
- Surface thermodynamic properties of a semi-infinite Ising ferromagnet in the presence of a surface transverse field. (1991) (15)
- Plasma heating in highly excited GaN/AlGaN multiple quantum wells (1998) (15)
- Contributions to zero-field splitting from spin triplets of 3d4 and 3d6 ions in tetragonal symmetry. (1994) (15)
- Donors and excitons in triangular GaAs-Ga1-xAlxAs quantum wells. (1994) (15)
- High efficiency hexagonal boron nitride neutron detectors with 1 cm2 detection areas (2020) (15)
- Adsorption of atomic hydrogen on Si(100)-2 x 1 at 400 K. (1993) (14)
- SiO2/TiO2 distributed Bragg reflector near 1.5 μm fabricated by e-beam evaporation (2013) (14)
- Temperature dependence of the energy bandgap of two-dimensional hexagonal boron nitride probed by excitonic photoluminescence (2014) (14)
- Temperature dependence of third-order elastic constants of potassium manganese fluoride. (1988) (14)
- Barrier-width dependence of quantum efficiencies of GaN/AlxGa1−xN multiple quantum wells (2000) (14)
- Strong-coupling effects in d-wave superconductors. (1993) (14)
- Formation energy of optically active Er3+ centers in Er doped GaN (2012) (14)
- Structural and electronic properties of Rh overlayers on Mo(110). (1990) (14)
- Magnetoresistivity of thin films of the electron-doped high-Tc superconductor Nd1.85Ce0.15CuO4+/- delta. (1996) (13)
- Universality and phase diagram around half-filled Landau levels. (1996) (13)
- Evidence of thermal nucleation of two-dimensional point vortices in single-crystal Nd1.85Ce0.15Cu2O4-y superconductors. (1994) (13)
- Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures (2015) (13)
- Ring diagram nuclear matter calculations using Bonn and V14 potentials. (1988) (13)
- Measurements of surface impedance, London penetration depth, and coherence length in Y-Ba-Cu-O films at microwave frequencies. (1994) (13)
- Astrophysical reaction rate for the 18F(p, alpha )15O reaction. (1996) (13)
- Optical properties of a high-quality insulating GaN epilayer (1999) (13)
- Photoluminescence quantum efficiency of Er optical centers in GaN epilayers (2016) (13)
- Formation and dissolution of microcrystalline graphite in carbon-implanted GaN (2000) (13)
- Surfactant effects of gallium on quality of AlN epilayers grown via metal-organic chemical-vapour deposition on SiC substrates (2012) (13)
- AlN MSM and Schottky photodetectors (2008) (13)
- Toward the realization of erbium-doped GaN bulk crystals as a gain medium for high energy lasers (2016) (12)
- Transition-matrix theory for two-photon ionization of rare-gas atoms and isoelectronic ions with application to argon. (1987) (12)
- Charge redistribution in AuZn: An x-ray-absorption near-edge-structure study. (1994) (12)
- Persistent photoconductivity in InxAlyGa1−x−yN quaternary alloys (2003) (12)
- Photoluminescence properties of erbium doped InGaN epilayers (2009) (12)
- Hard magnetic properties of rapidly annealed NdFeB thin films on Nb and V buffer layers (2001) (12)
- Enhanced magnetization in erbium doped GaN thin films due to strain induced electric fields (2011) (12)
- Growth and thermal stability of Ag or Au films on Nb(110). (1988) (12)
- Delta-doped AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with high breakdown voltages (2002) (12)
- Bulk AlN crystal growth by direct heating of the source using microwaves (2004) (12)
- Spin-1 and mixed-spin Ising model in a transverse field. (1990) (12)
- Room-Temperature Lasing Action in GaN Quantum Wells in the Infrared 1.5 μm Region (2018) (12)
- Valence band structure of AlN probed by photoluminescence (2008) (12)
- Direct observation of domains and discommensurations in Mn-Si-Al octagonal quasicrystal by transmission electron microscopy. (1991) (12)
- Near infrared photonic devices based on Er-doped GaN and InGaN (2011) (12)
- Effects of electron mass anisotropy on Hall factors in 6H‐SiC (1996) (11)
- Impurity effects on NMR and the Knight shift in a D-wave superconductor. (1994) (11)
- Lateral charge carrier transport properties of B-10 enriched hexagonal BN thick epilayers (2019) (11)
- Effects of surface recombination on the charge collection in h-BN neutron detectors (2019) (11)
- Raman electronic continuum in a dx2-y2 superconductor: Inelastic scattering. (1996) (11)
- Absolute elastic differential cross sections of electrons scattered by 3 (2)P3/2 sodium. (1990) (11)
- Long-time behavior of the cluster size distribution in joint coagulation processes. (1989) (11)
- Optical excitation cross section of erbium in GaN. (2013) (11)
- Anomalous behavior of the angular-dependent magnetic relaxation in single-crystal Bi2Sr2CaCu2Oy. (1990) (11)
- Low‐temperature epitaxial growth and photoluminescence characterization of GaN (1994) (11)
- Optimizing growth conditions for GaN/AlxGa1−xN multiple quantum well structures (2000) (11)
- Spin-density relaxation in superfluid 3He-A1. (1989) (11)
- Deep Ultraviolet Photoluminescence Studies of AlN Photonic Crystals (2006) (11)
- High-frequency stabilization and high-order harmonic generation of an excited Morse oscillator under intense fields. (1993) (11)
- Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition (2011) (10)
- Critical-current characteristics of c-axis-oriented (Bi,Pb)2Sr2Ca2Cu3Ox silver-sheathed tapes from 10 K to Tc0. (1995) (10)
- Birefringence of GaN/AlGaN optical waveguides (2003) (10)
- Penetration depth in layered high-Tc superconductors. (1992) (10)
- Erratum: X-ray crystal-truncation-rod analysis of untwinned YBa2Cu3O7- delta single crystals: The growth-termination plane (1992) (10)
- Time-Resolved Photoluminescence Studies of In x Ga 1−x As 1−y N y (1999) (10)
- Critical property and universality in the generalized Smoluchovski coagulation equation. (1990) (10)
- Properties and structure of the F-doped (Bi,Pb)-Sr-Ca-Cu-O superconductor. (1994) (10)
- Absolute cross sections for low-energy scattering of electrons by excited sodium. (1992) (10)
- Simulated growth of wetting films with a conserved order parameter. (1989) (10)
- Absolute small-angle electron excitation cross sections for the resonant transition in sodium. (1990) (10)
- Near-field optical study of AlGaN/GaN quantum-well waveguide (2004) (9)
- Evidence for bistable defects in 6H-SiC (1994) (9)
- Contribution of meson exchange currents to pion double charge exchange at low energies. (1990) (9)
- Thermoelectric Properties of In_x_Ga_1-x_N Alloys (2008) (9)
- Microscopic structure and energy transfer of vacancy-related defect pairs with Erbium in wide-gap semiconductors (2011) (9)
- Refractive index of erbium doped GaN thin films (2014) (9)
- The influence of anneal time on exchange-coupling in Nd/sub 2/Fe/sub 14/B/alpha-Fe films (2001) (9)
- Enhancement of 1.5 μm emission under 980 nm resonant excitation in Er and Yb co-doped GaN epilayers (2016) (9)
- Dynamics of localized excitons in InGaN/GaN quantum wells (1998) (9)
- Optical properties of GaN/AlN multiple quantum wells (2004) (9)
- Raman scattering from TO phonons in (GaAs)n/(AlAs)n superlattices. (1988) (9)
- Optical transitions in InGaN/AlGaN single quantum wells (1997) (9)
- Quantum nucleation and thermal activation of vortex rings in high-Tc superconductors. (1992) (9)
- Superelastic electron scattering by polarized excited sodium. (1995) (9)
- Strength of tensor force and s-d-shell effective interactions. (1989) (8)
- Hyperspectral Nonlinear Optical Light Generation from a Monolithic GaN Microcavity (2017) (8)
- Observation of electronic Raman scattering from Mg-doped wurtzite GaN (2000) (8)
- Achieving conductive high Al-content AlGaN alloys for deep UV photonics (2007) (8)
- Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy (2006) (8)
- Studies of field-induced nonequilibrium electron transport in an InxGa1−xN (x≅0.6) epilayer grown on GaN (2003) (8)
- Synthesis and properties of Cd/sub 1-x/Mn/sub x/S diluted magnetic semiconductor nanoparticles (1994) (8)
- Annealing behavior of luminescence from erbium-implanted GaN films (2001) (8)
- Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys (2009) (8)
- High-Quality Al-Rich AlGaN Alloys (2012) (8)
- Electronic, steric, and dilution effects on the magnetic properties of Sm2-xMxCuO4-y (M=Ce, Y, La, and Sr): Implications for magnetic pair breaking. (1992) (8)
- Free nucleation of aluminum nitride single crystals in HPBN crucible by sublimation (2005) (8)
- Hexagonal boron nitride: Epitaxial growth and device applications (2020) (8)
- Growth and fabrication of GaN/Er:GaN/GaN core-cladding planar waveguides (2019) (8)
- Evaporation residue, fission cross sections, and linear momentum transfer for 14N induced reactions from 35A to 155A MeV. (1996) (8)
- Anisotropic index of refraction and structural properties of hexagonal boron nitride epilayers probed by spectroscopic ellipsometry (2020) (8)
- Discommensurate microstructures in phason-strained octagonal quasicrystal phases of Mo-Cr-Ni. (1992) (8)
- Collapse of ring diagrams and nuclear-matter phase transitions. (1988) (8)
- Microwave vortex dissipation of superconducting Nd-Ce-Cu-O epitaxial films in high magnetic fields. (1993) (7)
- Observation of a D- triplet transition in GaAs/AlxGa1-xAs multiple quantum wells. (1996) (7)
- Dynamical Monte Carlo study of crystal growth in a solid-on-solid model. (1989) (7)
- Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride (2017) (7)
- Photoemission studies of the metal-nonmetal transition of sodium on solid ammonia. (1989) (7)
- Optical and magneto-optical properties of erbium doped InGaN and GaN epilayers (2011) (7)
- Observation of optical gain in Er-Doped GaN epilayers (2020) (7)
- Effect of fractons in superconductors with fractal structure. (1994) (7)
- Minimal model of spontaneous T-invariance violation with an invisible axion. (1988) (7)
- Relaxation of spin-glass magnetization in Cd1-xMnxTe diluted magnetic semiconductors. (1994) (7)
- Second-harmonic signal through the orientational phase transition in fullerene films. (1994) (7)
- Elastic constants of WC-a-C:H composite films studied by Brillouin spectroscopy. (1994) (7)
- Asymmetric current-voltage characteristics in type-II superconductors. (1994) (7)
- DX centers in Al0.34Ga0.66As amorphous thin films (1993) (7)
- Precession of Kepler’s orbit (1985) (7)
- Observation of a nondivergent Hall coefficient for a localized two-dimensional electron gas. (1993) (7)
- Semiconductor superlattices with periodic disorder (1988) (7)
- Reflected second-harmonic generation at a silver surface. (1991) (7)
- Surface emission of InxGa1−xN epilayers under strong optical excitation (1997) (7)
- Material Properties of GaN in the Context of Electron Devices (1998) (7)
- Comparative Analysis of Temperature-dependent Raman Spectra of GaN and GaN/Mg Films (2006) (7)
- Er-Doped GaN and InxGa1-xN for Optical Communications (2010) (6)
- Optical properties of Pr implanted GaN epilayers and AlxGa1−xN alloys (2001) (6)
- Direct momentum-space calculations for the resonant multiphoton processes of a hydrogen atom under intense laser pulses. (1996) (6)
- Spin-phonon renormalization of the excitation energy in a dilute two-dimensional antiferromagnet. (1994) (6)
- Excitation cross section of erbium-doped GaN waveguides under 980 nm optical pumping (2014) (6)
- Measurement of thermal-energy charge-transfer rate coefficient of Mo6+ and argon. (1992) (6)
- Exciton localization in corrugated GaAs/AlAs superlattices grown on (311) GaAs substrates. (1995) (6)
- Transport properties of a two-dimensional electron system at even-denominator fillings of the lowest Landau level. (1992) (6)
- Raman scattering by LO phonons in (GaAs)n1/(AlAs)n2 ultrathin-layer superlattices. (1991) (5)
- Advances in III-nitride micro-size light emitters (2001) (5)
- Probing of local alloy disorder in InGaN using Er3+ ions (2014) (5)
- Critical thickness of hexagonal GaBN/BN heterostructures (2019) (5)
- Magnetic properties of thin film and granular Dy50Fe50 as a function of size (2000) (5)
- Optical and electrical characteristics of organic electroluminescent devices with multiple-quantum-well structure (1999) (5)
- Epitaxial growth and time-resolved photoluminescence studies of AIN epilayers (2003) (5)
- Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition (2015) (5)
- Erbium doped GaN synthesized by hydride vapor-phase epitaxy (2015) (5)
- Simulation of irreversible diffusion-dominated reactions. (1990) (5)
- Relaxation of excitons in corrugated GaAs/AlAs superlattices. (1994) (5)
- Phonon structure in anisotropic layered superconductors. (1992) (5)
- Optoelectronic properties of hexagonal boron nitride epilayers (2013) (5)
- Optical properties of GaN/Er:GaN/GaN core–cladding planar waveguides (2019) (5)
- Optical conductivity of a layered superconductor. (1996) (5)
- Hexagonal boron nitride and 6 H-SiC heterostructures (2013) (5)
- Pressure dependence of the optical absorption edge of Cd1-xMnxSe. (1989) (5)
- Pinning and the mixed-state thermomagnetic transport properties of YBa2Cu3O7- delta. (1996) (5)
- Deep bandtail states picosecond intensity-dependent carrier dynamics of GaN epilayer under high excitation (2005) (5)
- Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride epitaxial layers (2012) (5)
- Nonlinear optical spectroscopy in GaAs: Magnetic freezeout of excitons. (1993) (5)
- Excitation and emission mechanisms of Er:GaN gain medium in 1.5 μm region (2017) (5)
- Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology (2020) (5)
- Mechanism of photoluminescence in GaN/Al0.2Ga0.8N superlattices (2001) (4)
- Metastable Giant Moments in Gd-Implanted GaN, Si, and Sapphire (2011) (4)
- Non-Equilibrium Acceptor Concentration in GaN:Mg Grown by Metalorganic Chemical Vapor Deposition (2003) (4)
- Synthesis and photoluminescence properties of hexagonal BGaN alloys and quantum wells (2018) (4)
- Time-Resolved Photoluminescence Studies of Indium-Rich InGaN Alloys (2005) (4)
- Probing the surface oxidation process in hexagonal boron nitride epilayers (2020) (4)
- Investigation of the electronic structure in Cu-Au I using x-ray-photoelectron spectroscopy. (1991) (4)
- High-efficiency and high-sensitivity thermal neutron detectors based on hexagonal BN epilayers (2017) (4)
- Resonant excitation cross-sections of erbium in freestanding GaN bulk crystals (2018) (4)
- Simulations of low-temperature annealing of crystal surfaces. (1996) (4)
- Simulated growth of wetting layers. (1987) (4)
- Influence of defect site transitions on discrete resistance fluctuations in normal-metal tunnel junctions. (1991) (4)
- Current injection 154 µm light-emitting devices based on Er-doped GaN/AlGaN multiple quantum wells (2016) (4)
- X-ray diffraction analysis of the defect structure in AlxGa1 − xN films grown by metalorganic chemical vapor deposition (2004) (4)
- Band structure of a periodic potential with two wells and two barriers per period (1987) (4)
- Nuclear Recoil Quenching Factor Measurement for HPGe Detector Using Monoenergetic Neutron Beam (2009) (4)
- Absence of a Kosterlitz-Thouless transition in ultrathin YBa2Cu3O7- delta films. (1996) (3)
- AIN Epitaxial Layers for UV Photonics (2005) (3)
- Interfaces driven by quenched random fields. (1992) (3)
- Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition (2015) (3)
- Oxygen dependence of the transport properties of Nd1.78Ce0.22CuO4+/- delta. (1996) (3)
- Measurement of the Al mole fraction of bulk AlGaN and AlGaN/GaN heterostructure by photoconductance method (1999) (3)
- Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities (1998) (3)
- Quantum contribution to Henry's law of adsorption. (1986) (3)
- Optical transitions and recombination lifetimes in GaN and InGaN epilayers, and InGaN/GaN and GaN/AlGaN multiple quantum wells (1996) (3)
- Phonon self-energy in a d-wave superconductor with retardation, finite temperature, and impurities. (1994) (3)
- Structure and spin-glass properties of Cd/sub 0.5/Mn/sub 0.5/S diluted magnetic semiconductor quantum dots (1995) (3)
- 1.54 μm emitter and optical amplifier based on Er doped InGaN/GaN (2010) (3)
- Anisotropic normal-state magnetothermopower of superconducting Nd1.85Ce0.15CuO4 crystals. (1993) (3)
- MOVPE growth of GaN and LED on (111) MgAl2O4 (1998) (3)
- Role of single-particle spectrum in the ring-diagram approach for nuclear matter. (1991) (3)
- LO-phonon-assisted tunneling in asymmetric double-well structures with thick barriers. (1992) (3)
- Single-particle spectrum and ring-diagram nuclear matter calculations: A reply to a Comment. (1989) (3)
- High-Resolution Group III Nitride Microdisplays (2011) (3)
- 多層六方晶系窒化ホウ素(BN)エピタクシー層の層数に依存する光学的性質 (2017) (3)
- Semiconduct or lasers: Expanding into blue and green (2011) (3)
- Comprehensive description of the dynamical screening of the internal electric fields of AlGaN / GaN quantum wells in time-resolved photoluminescence experiments (2014) (3)
- Nitride MicroLEDs and Beyond - A Decade Progress Review (2012) (3)
- Band structure and infrared optical transitions in ErN (2020) (3)
- Mg-doped Al-rich AlGaN alloys for deep UV emitters (2004) (3)
- Synthesis and optical characterization of erbium-doped III-N double heterostructures (2003) (3)
- Uncertainties in the two-nucleon potential and nuclear matter predictions. (1990) (3)
- (Invited) InGaN/GaN Multiple Quantum Well Solar Cells for Energy and Hydrogen Generation (2015) (3)
- Dynamics of bound-exciton energy transformation to edge-luminescence centers in CdS (1990) (3)
- Electrical transport properties of hexagonal boron nitride epilayers (2021) (3)
- Missing-row surface reconstruction of Au(113) induced by adsorbed calcium atoms. (1992) (3)
- Growth and optical properties of a‐plane AlN and Al rich AlN/AlxGa1–xN quantum wells grown on r‐plane sapphire substrates (2008) (3)
- 1/z expansion for the Ising and Heisenberg models in an external field. (1993) (3)
- Studies of a lattice model for adsorption and wetting in oil-water-surfactant mixtures. (1988) (2)
- Studies on H-terminated Si(100) surfaces by second-harmonic generation. (1994) (2)
- Measurement of the RLT, RL, and RT response functions for the 4He(e,e'p)3H reaction at large missing momentum. (1993) (2)
- GaN Light-Emitting Triodes for High-Efficiency Hole Injection (2006) (2)
- Thermal neutron detectors based on hexagonal boron nitride epilayers (2016) (2)
- Path-dependent conductivity in the regime of floating delocalized states. (1995) (2)
- MOCVD growth of Er-doped III-N and optical-magnetic characterization (2016) (2)
- Thermoelectric Properties of Er-doped InGaN Alloys for High Temperature Applications (2011) (2)
- Temperature dependence studies of Er optical centers in GaN epilayers grown by MOCVD (2017) (2)
- Noninteger conductance steps in a gapped double electron waveguide. (1995) (2)
- Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence (1998) (2)
- AlN: Properties and Applications (2011) (2)
- Charge collection in h-BN neutron detectors at elevated temperatures (2021) (2)
- Nitride Microlens Arrays for Blue and UV Wavelength Applications (2003) (2)
- Dynamics and spatial distribution of edge luminescence generators in CDS from time-resolved excitation spectroscopy (1988) (2)
- Interface broadening and Raman scattering in Si1-xGex/Si superlattices. (1996) (2)
- Correlation of excitation spectroscopy of edge luminescence and persistent photoconductivity in CDS (1988) (2)
- LASERS, OPTICS, AND OPTOELECTRONICS 061101 Direct modulation of excited state quantum dot lasers (3 pages) (2009) (2)
- Time-resolved photoluminescence studies of Al x Ga 1 x N alloys (2014) (2)
- BAND STRUCTURE OF NON-IDEAL SEMICONDUCTOR SUPERLATTICES (1987) (2)
- Metastability and persistent photoconductivity in Mgdoped ptype (2014) (2)
- Comparison of two methods for calculating finite-temperature ring diagrams. (1989) (2)
- The 44Ti(alpha,p) reaction and its implication on the 44Ti yield in supernovae (2000) (2)
- Carrier dynamics in AlN and GaN epilayers at the elevated temperatures (2005) (2)
- Simulation studies of the interface width of a growing solid. (1992) (2)
- Thermoelectric Properties of In 0 . 3 Ga 0 . 7 N Alloys (2009) (2)
- Deep UV time-resolved PL studies of AlN epilayers (2003) (2)
- III-Nitride Photonic Crystals for Blue and UV Emitters (2003) (2)
- Choice of finite-temperature single-particle potential and preservation of thermodynamic relations. (1989) (2)
- Surface chemical and electronic properties of plasma-treated n-type Al 0 . 5 Ga 0 (2007) (2)
- III-nitride blue and UV photonic-crystal light-emitting diodes (2004) (2)
- Transient characteristics of AlxGa1−xN/GaN heterojunction field-effect transistors (2000) (1)
- Experimental and theoretical study of refractive indices ofwurtzite GaN thin film from visible to infrared (2001) (1)
- Time-resolved photoluminescence studies of Si- and Mg-doped AlN epilayers (2004) (1)
- Exciton-polariton propagation in AlGaN/GaN quantum-well waveguides probe by time-resolved photoluminescence (2002) (1)
- Delta-doped AlGaN/GaN Heterostructure Field-Effect Transistors with Incorporation of AlN Epilayers (2003) (1)
- Growth and Characterization of B x Ga l-x N on 6H-SiC (0001) by MOVPE (1998) (1)
- Field-induced non-equilibrium electron transport in an In0.4Ga0.6N epilayer grown on GaN studied by subpicosecond Raman spectroscopy (2004) (1)
- Growth and Characterization of BxGa1−xN on 6H-SiC (0001) by Movpe (1999) (1)
- Recent advances in III-nitride UV materials and Devices (2004) (1)
- Mechanisms of bandedge emission in Mgdoped ptype GaN (2014) (1)
- Photoluminescence Properties Of Gan/AlGaN Multiple Quantum Well Microdisks (1997) (1)
- LASERS, OPTICS, AND OPTOELECTRONICS 1805 Terahertz-sideband generation in a semiconductor optical amplifier D. S. Citrin, S. Hughes 1808 Electroluminescence at silicon band gap energy from mechanically pressed indium-tin-oxide'Si contact (2001) (1)
- Photoluminescence from Gd-implanted AlN and GaN Epilayers (2006) (1)
- Response of alpha particles in hexagonal boron nitride neutron detectors (2017) (1)
- Recent advances in III-nitride ultraviolet photonic materials and devices (2003) (1)
- Growth and Photoluminescence Studies of A-Plane AlN/Al_x_Ga_1-x_N (2007) (1)
- High Mobility InN epilayers grown on AlN templates by MOCVD (2008) (1)
- Beryllium Doped p-type GaN Grown by Metal-Organic Chemical Vapor Deposition (1987) (1)
- Electroluminescence from Er doped III-nitride light emitters synthesized by metal organic chemical vapor deposition (2007) (1)
- Growth and optoelectronic properties of III-nitride quaternary alloys (2001) (1)
- Time-resolved photoluminescence studies of Al-rich AlGaN alloys (2002) (1)
- Persistent photoconductivity in Cd0.7Zn0.3Se mixed crystals (1990) (1)
- Luminescence from Erbium-Doped Gallium Nitride Thin Films (1998) (1)
- Correlation between sheet carrier density-mobility product and persistent photoconductivity in AlGaN/GaN modulation doped heterostructures (1999) (1)
- 1.54 Micrometer Emitter and Optical Amplifier Based on Er Doped InGaN/GaN (2010) (1)
- Photoemission study of the growth and modification of the Al/Ta(110) interface. (1989) (1)
- Thermal conductivity of a layered superconductor. (1993) (1)
- Internal friction and Young's modulus in the Bi(Pb)-Sr-Ca-Cu-O superconductor. (1990) (1)
- Polarization dependence of the frequency-domain four-wave-mixing response of excitons in GaAs. (1995) (1)
- Effect of fractons and magnons on the resistivity of dilute ferromagnets. (1993) (1)
- Surface relaxation below the roughening temperature. (1995) (1)
- Scattering of electrons off fractons in the normal state of high-Tc superconductors. (1993) (1)
- Security-Aware Periodic-Write Scheduling for Mission-Critical Embedded Storage System (2009) (1)
- Simulated equilibrium and nonequilibrium interfaces in a lattice model. (1988) (1)
- On Saussure＇s linguistic theory (2009) (1)
- Jiang and Kojima reply. (1989) (1)
- Pion-nucleus scattering and baryon resonances in the nuclear medium. (1995) (1)
- Magnetic relaxation and 4He coverage in superfluid 3He-A1. (1992) (1)
- Quantum-electrodynamic theory of vortex oscillations in type-II superconductors. (1992) (1)
- Time-resolved photoluminescence studies of Mg-doped AlN epilayers (2006) (1)
- Well-width dependence of the quantum efficiencies of GaN / Al x Ga 1 x N multiple quantum (2014) (1)
- III-nitride deep ultraviolet micro- and nano-photonics (2006) (1)
- p-Type AlN nanowires and AlN nanowire light emitting diodes on Si (2015) (1)
- Boron nitride neutron detector with the ability for detecting both thermal and fast neutrons (2022) (1)
- Mechanism of enhanced luminescence in InAlGaN quaternary alloys (2002) (1)
- III-nitride nanostructures for energy generation (2010) (1)
- Band structure and ultraviolet optical transitions in ErN (2021) (1)
- Properties And Band Structure Of Short-Period Compensated N-I-P-I Doping Superlattices (1988) (1)
- Polarization-resolved Er emission in Er doped GaN bulk crystals (2020) (1)
- Erbium-doped GaN bulk crystals as a gain medium for eye-safe high energy lasers (2018) (1)
- Erbium energy levels in GaN grown by hydride vapor phase epitaxy (2020) (1)
- Wetting and adsorption at three-phase coexistence in oil-water-surfactant mixtures: Results of a lattice model. (1988) (0)
- Relativistic ring-diagram nuclear matter calculations. (1993) (0)
- Neutron Emission Double-Differential Cross-Section （DDX） Measurement of Natural Iron at 8.17 MeV Neutrons (2007) (0)
- Charge collection and trapping mechanisms in hexagonal boron nitride epilayers (2021) (0)
- Erratum: Magnetic resonance of heavy-fermion superconductors and high-Tc superconductors (1991) (0)
- Thermal annealing effects on the optical properties of high‐indium InGaN epi‐layers (2003) (0)
- Probing the bandgap and effects of t-BN domains in h-BN neutron detectors (2022) (0)
- Effects of polarity on material's quality of Al-rich AlGaN alloys (2007) (0)
- Microstructure of Er optical centers in the large-bandgap semiconductor GaN (2015) (0)
- AlInGaN Bandgap and Doping Engineering for Visible Laser (2010) (0)
- Wide Bandgap III-Nitride Micro- and Nano-Photonics (2008) (0)
- Epitaxial Growth and Time-Resolved Photoluminescence Studies ofAlN Epilayers (2003) (0)
- 1.54 Micrometer Emitters Based on Erbium Doped InGaN P-I-N Junctions (2010) (0)
- MOVPE growth of GaN and LED on ( 1 1 1 ) MgAl 2 O 4 (1998) (0)
- Telecommunication-Wavelength Lasing in Er-doped GaN Multiple Quantum Wells at Room Temperature (2018) (0)
- Rare Earth doped GaN for photonic devices (2017) (0)
- III-nitrate ultraviolet photonic materials: epitaxial growth, optical and electrical properties, and applications (2003) (0)
- New Perspectives about the Role of Cobalt in Hydrodesulfurization Catalysis (2004) (0)
- Fabrication and Optical Recombination in III-Nitride Microstructures and Devices (2003) (0)
- Optical resonant modes in InGaN MQW/GaN micro-cone☆ (2002) (0)
- 2011 8 : 00 AM-11 : 00 AM — Session A 12 GERA DMP : Focus Session : Electricity-to-Light Conversion : Solid State Lighting (2011) (0)
- Recent ROB developments on wide bandgap based UV sensors (2009) (0)
- 1.54 $\mu$m emitters based on monolithic integration of Er doped GaN with nitride emitters (2008) (0)
- Effects of polarization field on optical transitions and selection rules in Er doped GaN (2022) (0)
- Al rich AlN/AlGaN Quantum Wells (2006) (0)
- High qaulity Al-rich AlGaN alloys (invited) (2012) (0)
- Electronic Raman Scattering from Mg-Doped Wurtzite GaN (1999) (0)
- Optical properties of AlN epilayers probed by polarization resolved photoluminescence (2008) (0)
- Polarization Properties of III-Nitride Blue and UV Light-Emitting Diodes (2005) (0)
- Ultrafast phenomena in semiconductors VI : 21, 24-25 January, 2002, San Jose, USA (2002) (0)
- Optical properties of InGaN multiple quantum well microdisks (1999) (0)
- Stresses experienced by AlN films grown on sapphire (2005) (0)
- Charge Carrier Transport Properties in Layered Structure of Hexagonal Boron Nitride ($h$-BN) and Thermal Neutron Detection Based on $h$-BN (2015) (0)
- Current-Injected 1.54 Micrometers Light Emitting Diodes Based on Erbium-Doped (2008) (0)
- Structure and Spin-Glass Properties of Cd,,Mn, ,S Diluted Magnetic Semiconductor Quantum Dots (1995) (0)
- III–Nitride Microcavity Light Emitters (2007) (0)
- Optical Reflectance of bulk AlN Crystals and AlN epitaxial films (2005) (0)
- Optically pumped lasing from Er-doped GaN epilayers in the infrared region (2019) (0)
- Optimizing GaN/AlGaN multiple quantum well structures by time-resolved photoluminescence (2001) (0)
- Magnetic-field-induced resonance in four-wave mixing in GaAs. (1994) (0)
- Optical and magnetic properties of Tm-doped doped AlGaN alloys (2009) (0)
- Spectroscopic characterization of Er optical center in multiple quantum wells AlN/GaN:Er (2016) (0)
- Two different behavior patterns of photoluminescence depending on Mg doping rate in p-type GaN epilayers (2014) (0)
- Nonlinear optical effects in semi-polar GaN micro-cavity emitter (2017) (0)
- Single phase In$_{x}$Ga$_{1-x}$N (0.25 $\le $ x $\le $ 0.63) alloys synthesized by MOCVD. (2008) (0)
- Optical and Electrical Properties of III-Nitrides and Related Materials (2016) (0)
- Well Thickness And Doping Effects, And Room Temperature emission mechanisms in InGaN/GaN And GaN/AlGaN Multiple Quantum Wells (1997) (0)
- The ground state of a particle under the influence of a uniformly charged sphere (1986) (0)
- Dynamics of Localized Excitons in GaInN/GaN Quantum Wells (1998) (0)
- Time-resolved measurement of temperature dependent carrier dynamics in self-organized InGaAs quantum dots (2002) (0)
- Defect Reduction in AlxGa1-xN Films Grown by Metal Organic Chemical Vapor Deposition (2003) (0)
- Piezoelectric effects on the dynamics of optical transitions in GaN/AlxGa1-xN multiple quantum wells (1999) (0)
- Radiative and nonradiative tunneling in GaN/InGaN single quantum well light emitting diodes (2002) (0)
- AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) with the Delta-Doped Barrier Layer (2002) (0)
- III-Nitride Micro-Emitter Arrays (2008) (0)
- Advances in III-nitride microstructures fund micro-size emitters (2003) (0)
- Visible and Infrared Emission from Er-doped III-N Light Emitting Diodes (2005) (0)
- Growth and properties of hexagonal boron nitride (h-BN) based alloys and quantum wells (2020) (0)
- Fabrication and Optical Studies of AlGaN/GaN Quantum Well Wave-guides (2001) (0)
- Optica l propertie s of a high-qualit y insulatin g GaN epilayer (1999) (0)
- Carrier Dynamics in III-N Quantum Wells and Microdisks Under High Excitation Conditions (1998) (0)
- Persistent Photoconductivity in p-Type GaN Epilayers and n-Type AlGaN/GaN Heterostructures (1996) (0)
- Localize d vibrationa l mode s of carbon-hydroge n complexe s in GaN (1999) (0)
- Insulator-gated AlGaN/GaN heterostructure field effect transistors (2003) (0)
- Mechanisms of bandedge emission in Mgdoped ptype (2012) (0)
- Growth and Fabrication of III-Nitride Deep Ultraviolet Emitters (2005) (0)
- Persistent photocondnctivitp and related critical phenomena in Zn 0 3 cdQ 7 se (0)
- UV/Blue III-Nitride Micro-Cavity Photonic Devices (2001) (0)
- Carrier Dynamics in III--Nitrides Studied by Time-Resolved Photoluminescence (2004) (0)
- Impurities and conductivity control in Al-rich AlGaN alloys (2011) (0)
- Growth and Transport Properties of Al-rich Si-doped n-type AlGaN alloys (2002) (0)
- Hexagonal boron nitride epilayers for deep UV photonics (2017) (0)
- Excitation Intensity Dependence of Free-exciton Transitions in GaN Grown by Low-pressure Metalorganic Chemical Vapor Deposition (1998) (0)
- Anisotropic optical and structural properties of hexagonal boron nitride epilayers probed by optical ellipsometry (2020) (0)
- Development of nitride microLEDs and displays (2021) (0)
- Hexagonal boron nitride for deep UV photonics (2015) (0)
- Formation energy and optical excitation mechanisms of Er in GaN semi-bulk crystals (2022) (0)
- Thermoelectrical properties of InGaN (2007) (0)
- Valence band structure of AIN probed by photoluminescence (2008) (0)
- How we made the microLED (2023) (0)
- AlxGa 1 À xN Õ GaN band offsets determined by deep-level emission (2014) (0)
- Dynamics of a bandedge transition in GaN grown by molecular beam epitaxy (2014) (0)
- Development of Micro-LEDs and Applications (2019) (0)
- Dynamics of fundamental optical transitions in group III nitrides (1998) (0)
- Optical Properties of Mg-GaN, GaN/AlGaN SCH structures, and GaN on ZnO Substrates (1995) (0)
- Electrical and Optical Porperties of Mg-Doped Al_.7_Ga_.3_N Alloys (2005) (0)
- III-nitrides show promise for telecom wavelengths : Materials and packaging (2003) (0)
- Realizing GaN/Er:GaN/GaN core-cladding planar waveguide gain medium via hydride vapor phase epitaxy (2020) (0)
- Fabrication and Characterization of InxAlyGa1−x−yN Ultraviolet Detectors (2000) (0)
- Compositional changes in erbium-implanted GaN films due to annealing (2003) (0)
- Optical and magneto-optical properties of neodymium and erbium doped gallium nitride epilayers (2011) (0)
- Chapter 6 – Persistent photoconductivity in III-nitrides (2000) (0)
- Polarization Properties of AlGaN Alloys (2004) (0)
- Optical Properties of Pr Implanted AlxGa1-xN Alloys (2000) (0)
- Relaxation of magnetization in Cd1−xMnxTe diluted magnetic semiconductors under illumination (1994) (0)
- Optica l transition s in Pr-implante d GaN (1999) (0)
- Toward High Efficiency at High Temperatures: Recent Progress and Prospects on InGaN-Based Solar Cells (2022) (0)
- ITT-Nitride Ultraviolet Photonic Materials — Epitaxial Growth , Optical and Electrical Properties , and Applications (2003) (0)
- Abstract Submitted for the MAR11 Meeting of The American Physical Society Structural and Optical properties of Si-doped AlN SASHIKANTH (2012) (0)
- Symposium G : GaN and Related Alloys – G11.1 LUMINESCENCE FROM ERBIUM-DOPED GALLIUM NITRIDE THIN FILMS (1998) (0)
- Effects of growth interruption on the optical and the structural properties of InGaN / GaN quantum wells grown by metalorganic chemical vapor deposition (2014) (0)
- Current Injection Emitters at 1.54 µm Based on Erbium Doped GaN p-i-n Structures (2012) (0)
- Metal-insulator transition in semiconductor alloys probed by persistent photoconducfivity (2011) (0)
- Optical and optoelectronic properties of hexagonal boron nitride epilayers (2014) (0)
- Realization of all-crystalline GaN/Er:GaN/GaN core-cladding optical fiber structures (2022) (0)
- Synthesis and properties of hexagonal GaBN/BN heterostructure and quantum wells. 6.3.6 (2020) (0)
- Transient characteristics of Al x Ga 1 x N / GaN heterojunction field-effect transistors (2014) (0)
- Development of µLED and µLED displays (2022) (0)
- Toward achieving cost-effective hexagonal BN semi-bulk crystals and BN neutron detectors via halide vapor phase epitaxy (2023) (0)
- Magneto-Optical Studies of Rare Earth Doped III-V Nitrides (2012) (0)
- Synthesis and Properties of Cd1JWi@ Diluted Magnetic Semiconductor Nanoparticles (1994) (0)
- Hydrogen Generation and Photoelectrochemical Effect of InGaN alloys (2011) (0)
- III-Nitrides on Si Substrates (2016) (0)
- Magnetic doping of III-V nitrides and novel room temperature sensing applications (2003) (0)
- Lifetime distribution of spontaneous emission from quantum dots in three-dimensional woodpile photonic crystals (2012) (0)
- Investigation of The Electrical and Chemical Properties of Plasma-Treated AlGaN (2006) (0)
- MOCVD grown hexagonal BN epilayers for DUV photonics (2013) (0)
- Switching Characteristics of AlxGa1-xN/GaN Heterojunction Field-effect Transistors (2000) (0)
- North-Holland, Amsterdam DYNAMICS AND SPATIAL DISTRIBUTION OF EDGE LUMINESCENCEG[NERATORS IN CDS FROM TIME-RESOLVED EXCITATION SPECTROSCOPY (2002) (0)
- High Al-content AlGaN Alloys for Deep UV Laser Applications (2008) (0)
- A conductive AFM study of carbon-rich hexagonal (BN)C semiconductor alloys (2022) (0)
- 200 Nanometer Deep Ultraviolet Photodetectors basen on AlN (2011) (0)
- Erbium Doped GaN Lasers by Optical Pumping (2016) (0)
- Optical excitation of Er centers in GaN epilayers grown by MOCVD (2016) (0)
- Synthesis and characterization of ferromagnetic AlN and AlGaN layers (2003) (0)
- Subpicosecond Raman studies of nonequilibrium electron transport in an In0.4Ga0.6N epilayer grown on GaN (2004) (0)
- Dynamics of Optical Recombination in GaN and AlxGal-xN (1999) (0)
- Surface Dependent Magnetic Phase Transition in Cd_1-xMn_xS Nanoparticles (1997) (0)
- Effects of unique band structure of h-BN probed by photocurrent excitation spectroscopy (2022) (0)
- Rare earth-doped III-N light emitting diodes (2004) (0)
- Technical Progress Report for "Optical and Electrical Properties of III-Nitrides and Related Materials" (2008) (0)
- Band structure and infrared optical transitions inErN (2020) (0)
- Quantum Efficiency Studies of GaN/AlxGa1-xN MQWs With Different Well Thicknesses (2000) (0)
- Room-temperature Telecommunication Wavelength Lasing from GaN Multiple-quantum Wells (2018) (0)
- Photoluminescence studies of bandedge transitions in GaN epitaxial layers grown by plasmaassisted molecular beam epitaxy (2012) (0)
- Growth and Characterization of High In-Content InGaN Alloys (2002) (0)
- Exciton localization dynamics in AlxGa1-xN alloys (2000) (0)
- (Invited) Basic Properties of h-BN Epilayers (2016) (0)
- Time-Resolved Photoluminescence Studies of InGaN/AlGaN Multiple Quantum Wells (1997) (0)
- Achieving p-InxGa1-xN alloys with high In contents (2010) (0)
- Layer-structured hexagonal boron nitride carbon semiconductor alloys for deep UV photonics (2015) (0)
- Thermal Stability and Tribological Properties of Fluorinated Amorphous Carbon Thin Films Doped With Nitrogen (2012) (0)
- Neutral donor-acceptor-pair recombination under a uniform electric field. (1988) (0)
- Glozman, Johnson, and Jiang reply. (1995) (0)
- Scattering of electrons from fractons and magnons in dilute two-dimensional antiferromagnets: Temperature-dependent resistivity in high-Tc cuprates. (1992) (0)
- Calculation of the superconducting parameter for hcp transition metals. (1991) (0)
- Quantum circuit theory and measurements on Y-Ba-Cu-O grain-boundary weak-link bridges. (1994) (0)
- Calculated lattice distortions at an isolated step on body-centered-cubic {100} surfaces. (1988) (0)
- Second harmonic spectroscopy of two-dimensional Si nanocrystal layers (2002) (0)
- Electric-field-induced exciton-linewidth broadening in short-period GaAs/GaxAl1-xAs superlattices. (1993) (0)
- X-ray crystal-truncation-rod analysis of untwinned YBa2Cu3O7- delta single crystals: The growth-termination plane. (1992) (0)
- Simulation study of roughening in disordered systems. (1990) (0)
- Zuo et al. reply. (1994) (0)
- Relativistic momentum-space optical model and meson-deuteron scattering. (1995) (0)
- Effect of fractons on the exciton dynamics in dilute magnets. (1995) (0)
- Reliability-aware mapping and links voltage assignment for energy-efficient networks-on-chip (2014) (0)
- Optical properties of III-nitride microcavities (1999) (0)
- Transport properties of Nd1.85Ce0.15CuO4+ delta crystals before and after reduction. (1993) (0)
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