Ilesanmi Adesida

Q: What Schools Are Affiliated With Ilesanmi Adesida

Ilesanmi Adesida is affiliated with the following schools: University of California, Berkeley, University of Lagos, Stanford University, Cornell University, University of Illinois Urbana-Champaign

Ilesanmi Adesida's AcademicInfluence.com Rankings

Ilesanmi Adesida

Engineering

#352

World Rank

#624

Historical Rank

#158

USA Rank

Electrical Engineering

#202

World Rank

#232

Historical Rank

#89

USA Rank

Applied Physics

#2123

World Rank

#2162

Historical Rank

#204

USA Rank

engineering Degrees

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Engineering

Ilesanmi Adesida's Degrees

PhD Electrical Engineering Stanford University
Masters Electrical Engineering Stanford University
Bachelors Electrical Engineering University of Lagos

Why Is Ilesanmi Adesida Influential?

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According to Wikipedia, Ilesanmi Adesida is a Nigerian American physicist of Yoruba descent. He has been the provost at Nazarbayev University in Astana, Kazakhstan, from September 2016. Adesida is also the Donald Biggar Willett Professor Emeritus of Engineering at the University of Illinois at Urbana-Champaign; he retired from Illinois in 2016. In May 2012, the board of trustees of the University of Illinois selected Adesida to be the next vice chancellor for academic affairs and provost of the Urbana campus, a position he held from August 15, 2012 to August 31, 2015. Other positions that Adesida held at Illinois included dean of the college of engineering, director of the Center for Nanoscale Science and Technology, director of the Micro and Nanotechnology Laboratory, professor of materials science and engineering, professor of electrical and computer engineering, professor of the Beckman Institute for Advanced Science and Technology, and professor of the Coordinated Science Laboratory. In 2006, Adesida was elected as a member into the National Academy of Engineering for contributions to the nanometer-scale processing of semiconductor structures and applications in high performance electronic and optoelectronic devices. Adesida was also a member of the board of Fluor Corporation from 2007 to 2011.

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Ilesanmi Adesida's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Transfer printing by kinetic control of adhesion to an elastomeric stamp (2006) (802)
AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise (2001) (218)
Recessed-gate enhancement-mode GaN HEMT with high threshold voltage (2005) (213)
Gallium nitride whiskers formed by selective photoenhanced wet etching of dislocations (1998) (212)
AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz (2002) (190)
Highly anisotropic photoenhanced wet etching of n-type GaN (1997) (185)
Schottky barrier properties of various metals on n-type GaN (1996) (183)
Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa) (1993) (161)
Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching (1999) (137)
High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures (1999) (136)
Smooth n-type GaN surfaces by photoenhanced wet etching (1998) (134)
Buckled and Wavy Ribbons of GaAs for High‐Performance Electronics on Elastomeric Substrates (2006) (131)
A comparative study of surface passivation on AlGaN/GaN HEMTs (2002) (129)
Thermally-stable low-resistance Ti/Al/Mo/Au multilayer ohmic contacts on n–GaN (2002) (127)
DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates (1998) (120)
The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-Type GaN (1998) (113)
Formation of low resistance nonalloyed Al/Pt ohmic contacts on n-type ZnO epitaxial layer (2003) (111)
Differences in the reaction kinetics and contact formation mechanisms of annealed Ti∕Al∕Mo∕Au Ohmic contacts on n-GaN and AlGaN∕GaN epilayers (2007) (103)
Traps in AlGaN/GaN/SiC heterostructures studied by deep level transient spectroscopy (2005) (103)
In-plane bandgap control in porous GaN through electroless wet chemical etching (2002) (98)
Bendable GaN high electron mobility transistors on plastic substrates (2006) (97)
Comparative study of Ti∕Al∕Mo∕Au, Mo∕Al∕Mo∕Au, and V∕Al∕Mo∕Au ohmic contacts to AlGaN∕GaN heterostructures (2004) (92)
High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate (2003) (86)
Radiolysis and resolution limits of inorganic halide resists (1985) (86)
Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes (1997) (85)
High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor (1998) (83)
Nanometer-period gratings in hydrogen silsesquioxane fabricated by electron beam lithography (2003) (83)
Plasma-Etching-Enhanced Deep Centers in n-GaN Grown by Metalorganic Chemical-Vapor Deposition (2003) (82)
DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration (2003) (82)
Properties of R.F. magnetron sputtered cadmiumtinoxide and indiumtinoxide thin films (2005) (81)
Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope (2003) (79)
AlGaN / GaN HEMTs on SiC with over 100 GHz fT and Low Microwave Noise (2001) (78)
60Co gamma radiation effects on DC, RF, and pulsed I–V characteristics of AlGaN/GaN HEMTs (2004) (77)
Low resistance Ti'Pt'Au ohmic contacts to p-type GaN (2000) (77)
Characteristics of chemically assisted ion beam etching of gallium nitride (1994) (77)
A low gate bias model extraction technique for AlGaN/GaN HEMTs (2006) (76)
Dislocation-induced nonuniform interfacial reactions of Ti∕Al∕Mo∕Au ohmic contacts on AlGaN∕GaN heterostructure (2005) (74)
Formation mechanism of Ohmic contacts on AlGaN∕GaN heterostructure: Electrical and microstructural characterizations (2008) (74)
A study of electron penetration in solids using a direct Monte Carlo approach (1980) (73)
Use of multimode interference couplers to broaden the passband of wavelength-dispersive integrated WDM filters (1996) (73)
AlF3—A new very high resolution electron beam resist (1984) (72)
Printed arrays of aligned GaAs wires for flexible transistors, diodes, and circuits on plastic substrates. (2006) (70)
Bendable GaAs metal-semiconductor field-effect transistors formed with printed GaAs wire arrays on plastic substrates (2005) (70)
Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP (1998) (67)
Gigahertz operation in flexible transistors on plastic substrates (2006) (66)
Improved Efficiency-Bandwidth Product of Modified Uni-Traveling Carrier Photodiode Structures Using an Undoped Photo-Absorption Layer (2005) (66)
Surface-state origin for the blueshifted emission in anodically etched porous silicon carbide (2004) (66)
Study of chemically assisted ion beam etching of GaN using HCl gas (1995) (63)
Reactive ion etching of gallium nitride using hydrogen bromide plasmas (1994) (59)
Growth of GaN on porous SiC and GaN substrates (2003) (59)
Characterization of chemically assisted ion beam etching of InP (1994) (57)
Microwave noise characteristics of AlGaN/GaN HEMTs on SiC substrates for broad-band low-noise amplifiers (2004) (57)
Inductively coupled plasma reactive ion etching of ZnO using BCl 3 -based plasmas (2003) (56)
Effect of H2 on the etch profile of InP/InGaAsP alloys in Cl2/Ar/H2 inductively coupled plasma reactive ion etching chemistries for photonic device fabrication (2002) (56)
Characterisation of Pd Schottky barrier on n-type GaN (1996) (54)
High speed p-type SiGe modulation-doped field-effect transistors (1996) (53)
Structural and spectroscopic characterization of porous silicon carbide formed by Pt-assisted electroless chemical etching (2003) (53)
Ion beam exposure profiles in PMMA–computer simulation (1981) (52)
The role of barrier layer on Ohmic performance of Ti∕Al-based contact metallizations on AlGaN∕GaN heterostructures (2006) (51)
Deep level characteristics in n-GaN with inductively coupled plasma damage (2008) (50)
Comparative study of thermally cured and electron-beam-exposed hydrogen silsesquioxane resists (2008) (50)
AlGaN-GaN heterostructure FETs with offset gate design (1997) (50)
Broad-area photoelectrochemical etching of GaN (1997) (50)
High temperature characteristics of Pd Schottky contacts on n-type GaN (1996) (49)
Direct contact mechanism of Ohmic metallization to AlGaN/GaN heterostructures via Ohmic area recess etching (2009) (49)
Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching (2002) (49)
Processing dependent behavior of soft imprint lithography on the 1-10-nm scale (2006) (49)
Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures (2014) (49)
Mechanism of Nonalloyed Al Ohmic Contacts to n-Type ZnO:Al Epitaxial Layer (2004) (48)
A MODFET-based optoelectronic integrated circuit receiver for optical interconnects (1993) (46)
Low resistance Ti/Al/Mo/Au ohmic contacts for AlGaN/GaN heterostructure field effect transistors (2002) (46)
Polarisation-independent InP arrayed waveguide filter using square cross-section waveguides (1996) (45)
Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures (1997) (45)
Microwave noise performance of AlGaN/GaN HEMTs (2000) (44)
Morphology evolution and luminescence properties of porous GaN generated via Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire (2003) (44)
A 70-GHz f/sub T/ low operating bias self-aligned p-type SiGe MODFET (1996) (44)
A photon detector with very high gain at low bias and at room temperature (2007) (44)
Characterization of Pd/Ni/Au ohmic contacts on p-GaN (2005) (43)
Monte Carlo simulation of ion beam penetration in solids (1982) (42)
A high-speed ITO-InAlAs-InGaAs Schottky-barrier photodetector (1997) (42)
The effects of molecular weight on the exposure characteristics of poly(methylmethacrylate) developed at low temperatures (2008) (42)
High rate etching of AlN using BCl3/Cl2/Ar inductively coupled plasma (2002) (42)
0.3-μm gate-length enhancement mode InAlAs/InGaAs/InP high-electron mobility transistor (1997) (41)
Field-plated 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs with varying field-plate length (2006) (41)
Ohmic contact formation mechanism of Ta∕Al∕Mo∕Au and Ti∕Al∕Mo∕Au metallizations on AlGaN∕GaN HEMTs (2005) (40)
Investigation of surface treatment schemes on n-type GaN and Al0.20Ga0.80N (2005) (40)
Inductively-coupled-plasma reactive ion etching of ZnO using BCl3-based plasmas and effect of the plasma treatment on Ti/Au ohmic contacts to ZnO (2004) (40)
Anatomy-performance correlation in Ti-based contact metallizations on AlGaN/GaN heterostructures (2007) (40)
InAlAs/InGaAs/InP MODFET's with uniform threshold voltage obtained by selective wet gate recess (1992) (39)
Ohmic contacts to n-type GaN using Pd/Al metallization (1996) (39)
High-Rate Dry Etching of ZnO in BCl3/CH4/H2 Plasmas (2003) (38)
Ion bombardment of resists (1983) (37)
A comparative study of metal-semiconductor-metal photodetectors on GaAs with indium-tin-oxide and Ti/Au electrodes (1992) (37)
Sub-Poissonian shot noise of a high internal gain injection photon detector. (2008) (37)
High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates (1997) (37)
The fabrication of suspended micromechanical structures from bulk 6H-SiC using an ICP-RIE system (2006) (36)
Properties of metamorphic materials and device structures on GaAs substrates (2002) (35)
Dry and Wet Etching for Group III – Nitrides (1998) (34)
A 1.45-W/mm, 30-GHz InP-channel power HEMT (1992) (34)
InGaAs metal-semiconductor-metal photodetectors with engineered Schottky barrier heights (1996) (34)
Etching of indium tin oxide in methane/hydrogen plasmas (1991) (33)
Modeling of InGaAs MSM photodetector for circuit-level simulation (1996) (33)
Plasma-induced damage study for n-GaN using inductively coupled plasma reactive ion etching (2001) (33)
DC, RF, and microwave noise performances of AlGaN/GaN HEMTs on sapphire substrates (2002) (33)
High precision temperature‐ and energy‐dependent refractive index of GaAs determined from excitation of optical waveguide eigenmodes (1990) (33)
Nanostructure fabrication in InP and related compounds (1990) (32)
Chemically assisted ion beam etching of GaAs, Ti, and Mo (1983) (32)
Long-wavelength In/sub 0.53/Ga/sub 0.47/As metamorphic p-i-n photodiodes on GaAs substrates (2001) (31)
Self-Aligned AlGaN/GaN High Electron Mobility Transistors (2004) (30)
15 GHz monolithic MODFET-MSM integrated photoreceiver operating at 1.55 mu m wavelength (1995) (30)
Metamorphic graded bandgap InGaAs-InGaAlAs-InAlAs double heterojunction p-i-I-n photodiodes (2002) (30)
High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz (2003) (29)
Ultralow resistance Si-containing Ti∕Al∕Mo∕Au Ohmic contacts with large processing window for AlGaN∕GaN heterostructures (2006) (29)
Fabrication and characterization of an InAlAs/InGaAs/InP ring oscillator using integrated enhancement- and depletion-mode high-electron mobility transistors (1997) (29)
AlGaN/InGaN HEMTs for RF current collapse suppression (2004) (28)
Low-resistance Pt'Pd'Au ohmic contacts to p-type AlGaN (2004) (28)
Etching characteristics of AlxGa1−xAs in (NH4)2Sx solutions (1992) (27)
High-Power-Density 0.25 µm Gate-Length AlGaN/GaN High-Electron-Mobility Transistors on Semi-Insulating 6H–SiC Substrates (2006) (27)
Characterisation of iridium Schottky contacts on n-AlxGa1−xN (2003) (27)
A strained-layer InGaAs-GaAs asymmetric cladding gain-coupled DFB laser with titanium surface gratings by metalorganic chemical vapor deposition (1997) (27)
Application of indium-tin-oxide with improved transmittance at 1.3 mu m for MSM photodetectors (1993) (27)
Effects of developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense silicon nanowire fabrication (2007) (26)
Chemically assisted ion beam etching of gallium nitride (1995) (26)
Selective Wet Etching Characteristics of Lattice‐Matched InGaAs / InAlAs / InP (1992) (26)
0.33- mu m gate-length millimeter-wave InP-channel HEMTs with high f/sub 1/ and f/sub max/ (1991) (25)
Characterization of Au and Al segregation layer in post-annealed thin Ti∕Al∕Mo∕Au Ohmic contacts to n‐GaN (2005) (25)
0.25 $\mu\hbox{m}$ Self-Aligned AlGaN/GaN High Electron Mobility Transistors (2008) (25)
Dry etching of GaN using chemically assisted Ion beam etching with HCI and H2/Cl2 (1996) (25)
DC and microwave performance of recessed-gate GaN MESFETs using ICP-RIE (2002) (25)
Mo/Al/Mo/Au Ohmic contact scheme for AlxGa1-xN/GaN high electron mobility transistors annealed at 500 °C (2006) (24)
ALD AI/sub 2/O/sub 3/ passivated MBE-grown AIGaN/GaN HEMTs on 6H-SiC (2007) (24)
Gate-controlled negative differential resistance in drain current characteristics of AlGaAs/InGaAs/GaAs pseudomorphic MODFETs (1989) (24)
High performance InP/InAlAs/GaAsSb/InP double heterojunction bipolar transistors (2006) (24)
Reactive ion etching for submicron structures of refractory metal silicides and polycides (1983) (24)
Dry development of ion beam exposed PMMA resist (1982) (24)
Integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors for high-speed circuit applications (1998) (23)
Characterization of GaAs/AlxGa1−xAs selective reactive ion etching in SiCl4/SiF4 plasmas (1990) (23)
High resolution electron‐beam lithography on thin films (1979) (23)
Microwave electronics device applications of AlGaN/GaN heterostructures (1999) (23)
Fabrication of apertures, slots, and grooves at the 8–80 nm scale in silicon and metal films (1983) (23)
18.5-GHz bandwidth monolithic MSM/MODFET photoreceiver for 1.55-μm wavelength communication systems (1996) (23)
Single step lithography for double-recessed gate pseudomorphic high electron mobility transistors (1997) (22)
High-speed MSM/HEMT and p-i-n/HEMT monolithic photoreceivers (2002) (22)
Recessed 0.25 μm gate AlGaN/GaN HEMTs on SiC with high gate-drain breakdown voltage using ICP-RIE (2001) (22)
0.15 μm gate-length AlGaN/GaN HEMTs with varying gate recess length (2003) (22)
Metamorphic heterojunction bipolar transistors and P–I–N photodiodes on GaAs substrates prepared by molecular beam epitaxy (2001) (22)
AlGaN/GaN heterostructure field-effect transistors (1999) (21)
Dark current suppression in GaAs metal-semiconductor-metal photodetectors (1996) (21)
Scanning tunneling microscope stimulated oxidation of silicon (100) surfaces (1994) (21)
Noninterfacial-nitride formation ohmic contact mechanism in Si-containing Ti∕Al∕Mo∕Au metallizations on AlGaN∕GaN heterostructures (2005) (20)
Characterization of rhenium Schottky contacts on n-type AlxGa1-xN (1999) (20)
Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors (2008) (20)
Inductively coupled plasma-induced damage in AlGaN/GaN HEMTs (2002) (20)
Selective reactive ion etching of InGaAs/InAlAs heterostructures in HBr plasma (1993) (20)
Thermally stable Ge/Ag/Ni Ohmic contact for InAlAs/InGaAs/InP HEMTs (2006) (20)
Study of the Electrical and Structural Characteristics of Al/Pt Ohmic Contacts on n-Type ZnO Epitaxial Layer (2004) (20)
Ultra-High Aspect Ratio InP Junctionless FinFETs by a Novel Wet Etching Method (2016) (19)
Breakdown Voltage Enhancement of AlGaN/GaN High-Electron-Mobility Transistors via Selective-Area Growth for Ohmic Contacts over Ion Implantation (2010) (19)
Polarization-independent InP-arrayed waveguide filter using square cross-section waveguides (1996) (19)
DC and RF performance of 0.25 μm p-type SiGe MODFET (1996) (19)
InAlAs/InGaAs heterostructure FET's processed with selective reactive-ion-etching gate-recess technology (1993) (19)
Fabrication of triangular nanochannels using the collapse of hydrogen silsesquioxane resists (2008) (19)
High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers (1997) (19)
Short‐period gratings for long‐wavelength optical devices (1989) (19)
Measurements of thermally induced nanometer-scale diffusion depth of Pt∕Ti∕Pt∕Au gate metallization on InAlAs∕InGaAs high-electron-mobility transistors (2005) (19)
A comparative study of Cl2 and HCl gases for the chemically assisted ion beam etching of InP (1995) (18)
Fabrication of nanowires with high aspect ratios utilized by dry etching with SF6: C4F8 and self-limiting thermal oxidation on Si substrate (2010) (18)
Compact polarisation independent InP reflective arrayed waveguide grating filter (1996) (18)
Resist exposure with light ions (1983) (18)
Selective reactive ion etching for short‐gate‐length GaAs/AlGaAs/InGaAs pseudomorphic modulation‐doped field‐effect transistors (1989) (18)
Inductively coupled plasma reactive ion etching of AlxGa1−xN for application in laser facet formation (1999) (18)
Characterization of ionic transport at the nanoscale (2006) (18)
Thermal stability of rhenium Schottky contacts on n-type AlxGa1−xN (2002) (17)
Design, fabrication, and performance of high-speed monolithically integrated InAlAs/InGaAs/InP MSM/HEMT photoreceivers (1997) (17)
Ion beam lithography at nanometer dimensions (1985) (17)
Etched cavity InGaAsP-InP waveguide Fabry-Perot filter tunable by current injection (1999) (17)
High performance 0.1 /spl mu/m gate-length p-type SiGe MODFET's and MOS-MODFET's (2000) (17)
Schottky barrier heights of Ni, Pt, Pd, and Au on n-type GaN (1995) (17)
Gate recessing of GaN MESFETs using photoelectrochemical wet etching (1999) (16)
The range of light ions in polymeric resists (1984) (16)
Chemically assisted ion beam etching for submicron structures (1983) (16)
p-Type SiGe transistors with low gate leakage using SiN gate dielectric (1999) (16)
Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure (2011) (16)
Ohmic contacts to n + -GaN capped AlGaN /AlN/GaN high electron mobility transistors (2007) (16)
High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm (2002) (16)
Metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on GaAs substrate with f/sub T/ over 200 GHz (1999) (16)
0.15-$muhboxm$-Gate InAlAs/InGaAs/InP E-HEMTs Utilizing Ir/Ti/Pt/Au Gate Structure (2006) (16)
The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs (2004) (15)
A high-performance AlGaAs/InGaAs/GaAs pseudomorphic MODFET-based monolithic optoelectronic receiver (1992) (15)
Extraordinary electroconductance in metal-semiconductor hybrid structures. (2006) (15)
Characterization of sidewall roughness of InP/InGaAsP etched using inductively coupled plasma for low loss optical waveguide applications (2003) (15)
Accumulation of fluorine in CF4 plasma-treated AlGaN∕GaN heterostructure interface: An experimental investigation (2009) (15)
InAlAs/InGaAs high electron mobility transistors on low temperature InAlAs buffer layers by metalorganic chemical vapor deposition (1995) (15)
A comparative study of integrated photoreceivers using MSM/HEMT and PIN/HEMT technologies (1998) (15)
Reactive ion etching for submicron structures (1981) (15)
On the Source of Jitter in a Room-Temperature Nanoinjection Photon Detector at 1.55 $\mu \hbox{m}$ (2008) (15)
Low-Damage Etching of Silicon Carbide in Cl2-Based Plasmas (2002) (15)
High performance 0.35 /spl mu/m gate-length monolithic enhancement/depletion-mode metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on GaAs substrates (2001) (15)
InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE (1997) (15)
Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes (2009) (15)
Process for enhancement/depletion-mode GaAs/InGaAs/AlGaAs pseudomorphic MODFETs using selective wet gate recessing (1992) (14)
High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W/mm at 10 GHz (2003) (14)
Low resistance ohmic contact to p-type GaN using Pd/Ir/Au multilayer scheme (2005) (14)
EVIDENCE OF CRYSTALLOGRAPHIC ETCHING IN (100)GaAs USING SiCl//4 REACTIVE ION ETCHING. (1985) (14)
Delay time analysis for short gate-length GaAs MESFETs (1995) (14)
Fine line lithography using ion beams (1985) (14)
Effects of salty-developer temperature on electron-beam-exposed hydrogen silsesquioxane resist for ultradense pattern transfer (2010) (14)
Parasitic capacitance effect on programming performance of phase change random access memory devices (2010) (13)
Study of fluorine bombardment on the electrical properties of AlGaN∕GaN heterostructures (2007) (13)
Structural and electronic effects of argon sputtering and reactive ion etching on In0.53Ga0.47As and In0.52Al0.48As studied by inelastic light scattering (1995) (13)
Monte Carlo simulation of electron penetration through thin films of PMMA (1978) (13)
Short-channel effects in sub-100 nm GaAs MESFETs (1991) (13)
Characteristics of GaAs/AlGaAs-doped channel MISFET's at cryogenic temperatures (1990) (13)
Interfacial reaction effect on the ohmic properties of a Pt/Pd/Au contact on p-type GaN (2004) (13)
Ohmic contacts on n-type Al0.59Ga0.41N for solar blind detectors (2002) (13)
Compact arrayed waveguide grating multifrequency laser using bulk active material (1997) (13)
The impact of a large bandgap drift region in long-wavelength metamorphic photodiodes (2001) (13)
Structural modification in reactive‐ion‐etched i‐InP and n+‐InP studied by Raman scattering (1993) (13)
AlGaN/GaN HEMT‐based fully monolithic X‐band low noise amplifier (2005) (12)
Dry etching of using chemically assisted ion beam etching (1997) (12)
Effect of recoil atoms on resolution in ion-beam lithography (1983) (12)
First-layer Si metallizations for thermally stable and smooth Ohmic contacts for AlGaN∕GaN high electron mobility transistors (2007) (12)
Utilization of an electron beam resist process to examine the effects of asymmetric gate recess on the device characteristics of AlGaAs/InGaAs PHEMTs (1997) (12)
Submicron modulation‐doped field‐effect transistor/metal–semiconductor–metal‐based optoelectronic integrated circuit receiver fabricated by direct‐write electron‐beam lithography (1992) (12)
Temperature-dependence of a GaN-based HEMT monolithic X- band low noise amplifier (2004) (12)
Anisotropic Etching of InP and InGaAs by Using an Inductively Coupled Plasma in Cl2/N2 and Cl2/Ar Mixtures at Low Bias Power (2007) (12)
Orientation dependent reactive ion etching of GaAs in SiCl4 (1984) (12)
PROFILE FORMATION IN CAIBE. (1984) (12)
Phonon‐electron interactions in the two‐dimensional electron gas in InGaAs‐InAlAs modulation‐doped field‐effect transistor structures studied by Raman scattering (1993) (11)
Substrate thickness considerations in electron beam lithography (1980) (11)
MOVPE-grown InAlAs/InGaAs/InP MODFETs with very high fT (1993) (11)
Microwave noise performances of AlGaN/GaN HEMTS on semi-insulating 6H-SiC substrates (2004) (11)
Dependence of DC and RF characteristics on gate length for high current AlGaN/GaN HFETs (1997) (11)
Low-noise performance of monolithically integrated 12-Gb/s p-i-n/HEMT photoreceiver for long-wavelength transmission systems (1998) (11)
A Reliable Low Gate Bias Model Extraction Procedure for AlGaN/GaN HEMTs (2006) (11)
Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{SiN}_{x}$ Dielectric Layer (2009) (10)
Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs∕InGaAs high electron mobility transistors (2006) (10)
Ultradense gold nanostructures fabricated using hydrogen silsesquioxane resist and applications for surface-enhanced Raman spectroscopy (2009) (10)
Submicrometer p-type SiGe modulation-doped field-effect transistors for high speed applications (1997) (10)
Effect of mask thickness on the nanoscale sidewall roughness and optical scattering losses of deep-etched InP∕InGaAsP high mesa waveguides (2005) (10)
Ion Beam Etching of Silicon, Refractory Metals, and Refractory Metal Silicides Using a Chemistry Assisted Technique (1984) (10)
Field-plated 0.25 μm gate-length AlGaN/GaN hemts on 6H-SiC with power density of 9.1 W/mm at 18 GHz (2005) (10)
Iridium Schottky contact on In0.52Al0.48As (2005) (10)
A 10 GHz Bandwidth Pseudomorphic GaAs/InGaAs/AIGaAs MODFET-Based OEIC Receiver (1992) (10)
Fabrication of nanostructures in AlGaSb/InAs using electron‐beam lithography and chemically assisted ion‐beam etching (1994) (10)
Fabrication of sub‐100‐nm T gates with SiN passivation layer (1991) (9)
Electrical and structural investigations of Ag-based Ohmic contacts for InAlAs∕InGaAs∕InP high electron mobility transistors (2006) (9)
Cryogenic temperature performance of modulation-doped field-effect transistors (1989) (9)
Reactive sputtering of Al2O3 on AlGaN/GaN heterostructure field-effect transistor (2008) (9)
DC and RF characterization of short-gate-length InGaAs/InAlAs MODFETs (1989) (9)
Photoelectrochemical etching of GaN (1997) (9)
Characteristics of selective reactive ion etching of InGaAs/InAlAs heterostructures using HBr plasma (1993) (9)
Progress in GaAs-Based Metamorphic Technology (2001) (9)
Plasma Processing of III-V Materials (2000) (9)
Profile control by chemically assisted ion‐beam and reactive ion beam etching (1983) (9)
Characterization of selective reactive ion etching effects on delta-doped GaAs/AlGaAs MODFET layers (1993) (9)
InGaAs metal-semiconductor-metal photodetectors with a hybrid combination of transparent and opaque electrodes (1997) (8)
Millimeter-wave high-power 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs on SiC substrates (2003) (8)
Fabrication of InP‐based wavelength division multiplexing arrayed waveguide filters using chemically assisted ion beam etching (1996) (8)
High-transconductance p-type SiGe modulation-doped field-effect transistor (1995) (8)
Study of the evolution of nanoscale roughness from the line edge of exposed resist to the sidewall of deep-etched InP/InGaAsP heterostructures (2004) (8)
High performance enhancement mode high electron mobility transistors (E-HEMTs) lattice matched to InP (1996) (8)
Multilayer resist process for asymmetric gate recess in field‐effect transistors (1993) (8)
Transient phase change effect during the crystallization process in phase change memory devices (2009) (8)
EXPOSURE AND DEVELOPMENT SIMULATIONS FOR NANOMETER ELECTRON BEAM LITHOGRAPHY. (1983) (8)
High-speed digital and analog performance of low-noise integrated MSM-HEMT photoreceivers (1997) (8)
Si-induced enhancement of ohmic performance of Ti/Al/Mo/Au metallisation for AlGaN/GaN HEMTs (2005) (8)
0.23 μm gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPE (1991) (7)
Effects of reactive ion etching on GaAs/AlGaAs heterostmctures (1991) (7)
Transport measurements and analytical modeling of extraordinary electrical conductance in Ti-GaAs metal-semiconductor hybrid structures (2009) (7)
Fabrication of InP/InGaAs quantum wires by free Cl2 (1995) (7)
Selective reactive ion etching in SiCl4/SiF4 plasmas for gate recess in GaAs/AlGaAs modulation‐doped field effect transistors (1993) (7)
Doped multichannel AlAs0.56Sb0.44/In0.53Ga0.47As field effect transistors (1999) (7)
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 µm (1997) (7)
Nonequilibrium Green’s function method for a quantum Hall device in a magnetic field (2003) (7)
DC, RF, and Microwave Noise Performances of (2002) (7)
High-performance AlGaN/GaN high electron mobility transistors on SiC (2002) (6)
Comparative Studies on Low-Resistance Pd-Based Ohmic Contacts on p-GaAsSb (2007) (6)
Alignment signals from silicon tapered steps for electron beam lithography (1982) (6)
Enhancement-mode InP-based HEMT devices and applications (1998) (6)
0.25 [micro sign]m gate-length, MBE-grown AlGaN/GaN HEMTs with high current and high fT (2001) (6)
Suppression of modal birefringence in InP-InGaAsP waveguides through use of compensated tensile strain (1997) (6)
160 GHz enhancement-mode InAlAs/InGaAs/InP high electron mobility transistor (1996) (6)
Ti/Pt/Au ohmic contacts on p-type GaN/Al/sub x/Ga/sub 1-x/N superlattices (2000) (6)
Low-frequency noise in AlGaN-GaN doped-channel heterostructure field effect transistors grown on insulating SiC substrates (1998) (6)
Enhancement-mode In0.52Al0.48As/ In0.53Ga0.47As/InP HEMT utilising Ir/Ti/Pt/Au gate (2005) (6)
Metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate with fT over 200 GHz (1999) (6)
Ion-beam processing effects on the thermal conductivity of n-GaN/sapphire (0001) (2002) (6)
Electron energy dissipation in layered media (1979) (6)
DC and RF characteristics of doped multichannel AlAs/sub 0.56/Sb/sub 0.44//In/sub 0.53/Ga/sub 0.47/As field effect transistors with variable gate-lengths (2001) (5)
Low-resistance Pd/Ir/Au ohmic contacts on p-GaAsSb (2004) (5)
Etching of InP in methane-based plasmas (1990) (5)
Wavelength dependent characteristics of high-speed metamorphic photodiodes (2003) (5)
Long wavelength metal-semiconductor-metal photodetectors with Ti/Au and indium-tin-oxide electrodes (1994) (5)
Comparative study of self-aligned and nonself-aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors with nanometer gate lengths (2000) (5)
Monolithic integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors (1996) (5)
High performance 0.25 μm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz (2003) (5)
Dependence of current-gain cutoff frequency on gate length in submicron GaInAs/AlInAs MODFETs (1989) (5)
Four-layer resist process for asymmetric gate recess (1996) (5)
Dry etching for submicron structures (1984) (5)
Photoluminescence studies of sidewall properties of dry-etched InGaAs/InP quantum wires (1994) (5)
Loss in heterostructure waveguide bends formed on a patterned substrate (1989) (5)
High performance 0.15 /spl mu/m recessed gate AlGaN/GaN HEMTs on sapphire (2001) (5)
Long wavelength metamorphic double heterojunction In0.53Ga0.47As/InAlGaAs/In0.52Al0.48As photodiodes on GaAs substrates (2001) (5)
High-frequency metamorphic p-i-n photodiodes and high-electron mobility transistor transimpedance amplifiers: Candidates for fiber-optic communications (2002) (5)
A bio-inspired single photon detector with suppressed noise and low jitter (2008) (4)
Sputter‐induced formation of an electron accumulation layer in In0.52Al0.48As (1994) (4)
Monte Carlo simulation of registration signals for electron beam microfabrication (1980) (4)
High temperature annealed Ge=Ag=Ni ohmic contact for InAlAs=InGaAs HEMTs (2005) (4)
Photo-injected carrier distributions in metal-semiconductor-metal photodetectors imaged by photoluminescence microscopy (1994) (4)
Growth and characterization of n-type GaAs/AlGaAs quantum well infrared photodetector on GaAs-on-Si substrate (1998) (4)
Quantum dots fabricated in InP/InGaAs by free Cl2 gas etching and metalorganic chemical vapor deposition regrowth (1996) (4)
0.32 mu m gate length InP-channel MODFETs with f/sub t/ above 90 GHz (1993) (4)
Inside Front Cover: Buckled and Wavy Ribbons of GaAs for High‐Performance Electronics on Elastomeric Substrates (Adv. Mater. 21/2006) (2006) (4)
Application of Indium-Tin-Oxide with Improved Transmittance at 1.3 pm for (1993) (4)
Depth distribution of reactive ion etching‐induced damage in InAlAs/InGaAs heterostructures evaluated by Hall measurements (1994) (4)
Electrical characteristics of Ir/Au and Pd/Ir/Au ohmic contacts on p-InGaAs (2004) (4)
High Performance Recessed Gate AlGaN/GaN HEMTs on Sapphire (2003) (4)
0.13 /spl mu/m gate-length In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As metamorphic HEMTs on GaAs substrate (2000) (4)
High performance 0.15 /spl mu/m self-aligned SiGe p-MOS-MODFET's with SiN gate dielectric (1999) (4)
VERY HIGH RESOLUTION ION BEAM LITHOGRAPHY. (1983) (4)
Long-wavelength metal-semiconductor-metal photodetectors with transparent and opaque electrodes (1995) (4)
Selective wet etching for InGaAs/InAlAs/InP heterostructure field-effect transistors (1992) (4)
InP-based HEMTs for high speed, low power circuit applications (1998) (3)
OMVPE-grown InAlAs/InGaAs/InP MODFET's with performance comparable to those grown by MBE (1992) (3)
P-i-n photodiodes in metamorphic InAlAs-InGaAs-GaAs for long wavelength applications (2000) (3)
Recessed-gate GaN MESFET using ICP-RIE for high temperature microwave applications (2000) (3)
Impulse Response of Metal-Semiconductor-Metal Photodetectors Using a Conformal Mapping Technique and Extracted Circuit Parameters (1997) (3)
Enhancement-Mode High Electron Mobility Transistors Lattice-Matched to InP Substrates Utilizing Ti/Pt/Au Metallization (2005) (3)
Wideband AlGaN-GaN HEMTs on SiC for low noise applications (2000) (3)
RF microcoils patterned using microlithographic techniques for use as microsensors in NMR (1993) (3)
Nanofabrication on electron beam resist using scanning tunneling microscopy (1994) (3)
0 33-pm Gate-Length Millimeter-Wave InP-Channel HEMT's with High ft (1991) (3)
Inhomogeneity in the fabrication of InGaAs/GaAs quantum wire arrays by selective-area metalorganic chemical vapor deposition (1996) (3)
Conductance quantization and zero bias peak in a gated quantum wire (2005) (3)
Field-plated AlGaN/GaN HEMTs with power density of 9.1 W/mm at 18 GHz (2005) (3)
Fabrication of parallel quantum wires in GaAs/AlGaAs heterostructures using AlAs etch stop layers (1993) (3)
Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures (1990) (3)
Highly selective etching of InGaAs on InAlAs in HBr plasma (1993) (3)
Germanium selenide as a negative inorganic resist for ion beam microfabrication (1983) (3)
Nanoporous Silicon Carbide for Nanoelectromechanical Systems Applications (2003) (3)
Schottky barrier characteristics and interfacial reactions of Ti on n-In0.52Al0.48As (2007) (3)
Oscillatory conductance in a double-bend quantum dot device (1994) (3)
Reactive ion etching‐induced damage in InAlAs/InGaAs heterostructure field‐effect transistors processed in HBr plasma (1994) (2)
Advanced submicron research and technology development at the national submicron facility (1983) (2)
Low loss high mesa optical waveguides based on InGaAsP/InP heterostructures. (2006) (2)
Micro-Racetrack Notch Filters Based on InGaAsP/InP High Mesa Optical Waveguides (2006) (2)
DC and RF Characteristics of Doped Multichannel AlAs Sb /In Ga As Field Effect Transistors with Variable Gate-Lengths (2001) (2)
Effects of Rapid Thermal Annealing on the Device Characteristics of Quantum Well Infrared Photodetectors (1997) (2)
Photoluminescence of Wet- and Dry-Etched Gallium Nitride (1997) (2)
0.13 μm gate-length In0.52Al0.48As/In0.53Ga0.47As metamorphic HEMTs on GaAs substrate (2000) (2)
Investigation of surface roughness of poly(methylmethacrylate) developed at reduced temperatures (2009) (2)
Short-Channel AlGaN/GaN Field-Plated High-Electron-Mobility Transistors for X-Band High Power Operation (2008) (2)
High transconductance enhancement-mode (2001) (2)
High-speed MSM-HEMT and PIN-HEMT monolithic photoreceivers (1999) (2)
Poisson modeling of ultraconfined AlGaAs-GaAs semiconductor devices with selective doping (1990) (2)
GaN heterostructure field effect transistors (1998) (2)
Metamorphic double heterojunction InGaAs-InGaAlAs-InAlAs photodiodes on GaAs substrates for 40 Gbit/s long wavelength optical fiber communication (2001) (2)
Elevated-Temperature Annealing Effects on AlGaN/GaN Heterostructures (2011) (2)
Monolithic integration of InAlAs/InGaAs enhancement and depletion (E/D)-mode metamorphic HEMTs on GaAs substrate (2001) (2)
High performance 0.25 /spl mu/m gate-length doped-channel AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates (1997) (2)
Effect of diffraction and interference in submicron metal-semiconductor-metal photodetectors (1998) (2)
0.2 mm T-gate InAlAs/InGaAs MODFET with f T = 170 GHz (1990) (2)
Fabrication and characterization of In0.52Al0.48As/In0.53Ga0.47As E/D-HEMTs on InP substrates (2006) (2)
The engineering research center for compound semiconductor microelectronics (1993) (2)
Fabrication of lateral superlattices using multilayer resist techniques (1992) (2)
Processes and Device Technologies for AlGaN/GaN High Electron Mobility Transistors (2006) (2)
Application of the Ag-Based Ohmic Contact to the Realization of Thermally-Stable InAlAs/InGaAs/InP High Electron Mobility Transistors (2006) (2)
GaN electronics with high electron mobility transistors (2004) (1)
Fabrication and transport study of finite lateral superlattices (1997) (1)
Fabrication and characterization of a 83 MHz high temperature /spl beta/-SiC MESFET operational amplifier with an AlN isolation layer on (1996) (1)
Selective Reactive ION Etching Effects on GaAs/AlGaAs Modfets (1991) (1)
Characteristics of Ti/Pt/Au Ohmic Contacts on p-type GaN/AlxGa1-xN Superlattices (1999) (1)
Development Characteristics of Ga+ Exposed PMMA and Associated Lithographic Resolution Limits (1983) (1)
Proceedings, 2000 IEEE/Cornell Conference on High Performance Devices August 7,8 & 9, 2000, Cornell University, Ithaca, New York (2000) (1)
Dc and Microwave Characteristics of High Transconductance AlGaN/GaN Heterostructure Field Effect Transistors on Sic Substrates (1997) (1)
Fabrication and characterization of short gate-length InAℓAs/InGaAs/InP MODFETS (1989) (1)
Ring oscillator using InAlAs/InGaAs/InP enhancement/depletion-mode high electron mobility transistor direct-coupled FET logic inverters (1997) (1)
Self-assembled monolayers of Lewis bases: effects on surface and interfacial electronic properties in III-V optical semiconductors (1994) (1)
Direct‐current and radio‐frequency properties of InAlAs/InGaAs pseudomorphic modulation doped field effect transistors with graded channels (1990) (1)
Extraordinary Electroconductance in In-GaAs hybrid thin film structures (2007) (1)
Monolithnic integration of In0.53Ga0.47As photodiodes and In0.53Ga0.47As/In0.52Al0.48As HEMTs on GaAs substrates for long wavelength OEIC applications (2002) (1)
Isoelectronic In Doping in p-GaN and its Effects on InGaN Light-Emitting Diodes (2004) (1)
MSMMODFET Photoreceiver for 1.55-pm Wavelength Communication Systems (1996) (1)
Nanolithography and nanofabrication using hydrogen silsesquioxane resists (2009) (1)
Erratum: Monte Carlo simulation of registration signals for electron beam microfabrication[App. Phys. Lett. 36, 6, 672 (1981)] (1981) (1)
A laterally tunable quantum dot transistor (1994) (1)
AlGaN/GaN HEMTs on sapphire (2002) (1)
Fabrication of quantum nanostructures for the measurement of thermoelectric phenomena (1996) (1)
Plasma-induced effects on the thermal conductivity of hydride vapor phase epitaxy grown n-GaN/Sapphire (0001) (2000) (1)
Inductively coupled plasma reactive ion etching of ZrO2:H solid electrolyte film in BCl3-based plasmas (2005) (1)
Submicrometer‐gate GaAs FET fabrication using masked ion beam/optical hybrid lithography (1983) (1)
TRANSIENT PHASE CHANGE ANALYSIS OF SCALING IN PHASE CHANGE DEVICES (2010) (1)
Process development for the realization of thermally-reliable enhancement-mode InAlAs/InGaAs/InP HEMTs with excellent DC and RF performance (2006) (1)
0.33/spl mu/m Millimeter Wave Inp-Channel Hemts with High F/sub T/ and F/sub MAX/ (1991) (1)
Advances in Gallium Nitride-based Electronics (2007) (1)
Gallium Nitride for Electronics (2005) (1)
A 15 GHz bandwidth lattice-matched InAlAs/InGaAs/InP HEMT-based OEIC photoreceiver (1995) (0)
Photoluminescence imaging of carrier distributions in metal-semi conductor-metal photodetectors (1993) (0)
Novel HEMT processing technologies and their circuit applications (1999) (0)
Indium-Phosphide-based Mutation-Designed Materials and Waveguides for Photonic Applications (2005) (0)
[Illinois] CNST 2012: Opening Remarks (2013) (0)
III-V nitrides and silicon carbide (1996) (0)
The Impact of InAlAs Spacer Layer on DC Characteristics of InP/InAlAs/GaAsSb/InP DHBTs (2005) (0)
DRY PROCESSING: NEW TECHNIQUES FOR ETCHING SUBMICROMETER STRUCTURES. (1983) (0)
[Illinois] CNST 2012: Welcome Remarks (2013) (0)
Special Issue Papers on III-V Nitride and SiC Materials and Devices (2000) (0)
Special Issue Papers on III-V Nitrides and Silicon Carbon (2001) (0)
NIRT: Self-Aligned and Self-Limited Quantum Dot Nanoswitches (2002) (0)
REACTIVE ION ETCHING OF SILICON AND TANTALUM SILICIDE FOR SUBMICRON STRUCTURES. (1985) (0)
Fabrication and characterization of InAlAs/InGaAs striped‐channel modulation‐doped field effect transistors (1994) (0)
Tolerance of InP polarisation-independent arrayed waveguide filters using square waveguide cores (1997) (0)
Thermally-stable gate technologies for InAlAs/InGaAs/InP HEMTs (2006) (0)
Zero bias conductance peak in a gated quantum wire (2005) (0)
LIMITATIONS DUE TO ELECTRON SCATTERING IN ELECTRON BEAM LITHOGRAPHY. (1980) (0)
Processing of InP and related compounds at nanometer dimensions (1992) (0)
High rate etching of silicon carbide (1999) (0)
Disorder-Induced Resonant Tunneling in Planar Quantum Dot Nanostructures (2021) (0)
Etching for GaN laser facets and material characterization (1998) (0)
Nanometer-scale gaps in hydrogen silsesquioxane resist for T-gate fabrication (2007) (0)
High performance wide-bandgap photonic and eleetronic devices grown by MBE (2003) (0)
Thermopower study in a double bend quantum structure (2002) (0)
Characterization of rhenium Schottky contacts on n-type A1xGa1-xN at high temperatures (1999) (0)
Engineering the Schottky barrier heights in InGaAs metal-semiconductor-metal photodetectors (1997) (0)
Fabrication and characterization of InGaAs-GaAs quantum wire arrays by selective-area metalorganic chemical vapor deposition (1997) (0)
Engineering Education for the 21st Century (2016) (0)
Effects of reactive ion etching on the electrical properties of n-GaN surfaces (1995) (0)
Proceedings of the Symposium on III-V Nitrides and Silicon (1996) (0)
Performance study of InGaAs/InAlAs/InP MODFETs on heterostructures grown by OMVPE and MBE (1992) (0)
Compound semiconductors: Illinois contributions and perspective (2008) (0)
Transport study in high mobility GaAs/AlGaAs lateral superlattices (1997) (0)
plasmas and effect of the plasma treatment on TiyAu ohmic contacts to ZnO (2004) (0)
Photoluminescence of InGaAs/InP quantum dots (1994) (0)
Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector (1998) (0)
Opto-Electronics: Receivers (2015) (0)
Processing of Epitaxial Heterostructure Devices (2000) (0)
Papers from the 38th International-Symposium on Electron, Ion, and Photon Beams - Preface (1994) (0)
0.33pm MILLIMETER WAVE InP-C HEMTS WITH HIGH FT AND Fm. (1991) (0)
Enhancement-mode InAlAs/InGaAs/InP HEMTs with Ir-based gate metallization (2005) (0)
DELAY TIME ANALYSIS FOR SHORT GATE-LENGTH (1995) (0)
Device And Fabrication Issues of High Performance Si/Sige Fets (1998) (0)
Characteristics of Ti/Pt/Au ohmic contacts on p-type GaN/Al xGa1-xN superlattices (2000) (0)
Fabrication and Characterization of Capless In0.52Al0.48As/In0.53Ga0.47As HEMTs (2006) (0)
Surface Engineering for Compliant Epitaxy (2001) (0)
Photoelectrochemical etching of GaN for materials characterization and device fabrication (1999) (0)
MASKED ION BEAM LITHOGRAPHY FOR SUBMICRON-GATE GaAs FET FABRICATION. (1983) (0)
DC Characteristics of Nanometer-Gatelength GaAS Mesfets (1991) (0)
Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies (2006) (0)
Nanoscale Detectors: Proof of Concept (1998) (0)
InP-Hemt-Based Digital Circuit Technology (1998) (0)
DRY ETCHING OF MATERIALS USED IN VLSI CIRCUITS. (1983) (0)
Photoluminescence characterization of InGaAs/InP quantum dots (1994) (0)
Technology for Non-Recessed Short Gate Length E-Mode AlGaN/GaN High-Electron Mobility Transistors (2008) (0)
AlGaAs/InGaAs PHEMTs with asymmetrically recessed gates achieved through a four layer resist process (1997) (0)
Indium-phosphide-based microresonator modulators and wavelength multiplexers (2004) (0)
Processing Technologies for Al(x)Ga(1-x)N Photodetector Arrays (2002) (0)
Frequency response of AlInAs/GaInAs/InP modulation-doped field-effect transistors at cryogenic temperatures (1988) (0)
CHARACTERIZATION OF REACTIVE ION BEAM AND ION BEAM ASSISTED ETCHING USING DIRECT ION MASS ANALYSIS AND EMISSION SPECTROSCOPY. (1984) (0)
Critical roles of CF$_{4}$ and SiCl$_{4}$ plasma treatments on AlGaN/GaN transistor performance (2008) (0)
Nanoscale detectors: Proof of concept. Final progress report (1998) (0)
Conductance studies in a double-bend quantum structure (1996) (0)
High performance submicron-gate SiGe p-type modulation-doped field-effect transistors (1995) (0)
Analytical XTEM Study of Ir/InAlAs Interfacial Reaction for InP-based High Electron Mobility Transistors (HEMTs) Gate Technology (2006) (0)
Processing of indium-tin-oxide for high speed metal-semiconductor-metal photodetectors (1992) (0)
STUDY OF ALIGNMENT SIGNALS FOR ELECTRON LITHOGRAPHY. (1980) (0)
Investigation of GaSb/InAs type II superlattices for infrared photodetectors (1996) (0)
FABRICATION OF NANOMETER SCALE STRUCTURES. (1984) (0)
DIRECT MEASUREMENTS OF THE RANGE OF SECONDARY ELECTRONS IN LOW ATOMIC NUMBER MATERIALS. (1984) (0)
aAs Metal-S emiconductor- otodetectors with Thin Absorption Layers (1997) (0)
Processing for Highly Efficient AlGaN/GaN Emitters (2009) (0)
Long wavelength shifting and broadening of quantum well infrared photodetector response via rapid thermal annealing (1996) (0)
Long-wavelength metamorphic InGaAs detectors on GaAs substrates (2003) (0)
InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE (1997) (0)
Methods and Mechanisms for Ohmic Contacts on AlGaN/GaN HEMTs (2006) (0)
Special issue on III-IV nitrides and silicon carbide (2000) (0)
High performance polarization-independent WDM filtering using an InP reflective arrayed waveguide grating (1996) (0)
h Speed P-Type SiGe Modulation- Field-Effect Transistors (1996) (0)
AlAs/sub 0.56/Sb/sub 0.44//In/sub 0.53/Ga/sub 0.47/As doped multi-channel field effect transistors (1999) (0)
High-performance 0.15 μm-gatelength OMVPE-grown InAlAs/InGaAs MODFETS (1993) (0)
Monolithic integration of In/sub 0.53/Ga/sub 0.47/As photodiodes and In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As HEMTs on GaAs substrates for long wavelength OEIC applications (2002) (0)
Electron beam scattering in an organic specimen (1978) (0)
Acquisition of Equipment for Research in Nanobiomedical Technologies (2008) (0)
A Wide Bandwidth Monolithic Long Wavelength MODFET/ MSM Photoreceiver (1995) (0)

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