Ingolf Lindau
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(Suggest an Edit or Addition)According to Wikipedia, Evert Ingolf Lindau is a Swedish physicist and professor emeritus at Lund University and Stanford University and a member of the Royal Swedish Academy of Sciences. Biography Lindau was awarded his PhD in 1971 at Chalmers University of Technology with his dissertation about photoemission and optical absorption studies of the band structure. After the dissertation, he began working at the Silicon Valley-based company Varian Associates in Palo Alto between 1971 and 1972 before he was employed at Stanford University in 1972. In 1973 he obtained the first X-ray photoemission spectra of the 4f levels of gold. In 1980 he became a professor at Stanford University for his research in electrical engineering and photonics. During his professorships he took a sabbatical at Lund University between 1988 and 1989, where he worked at MAX Lab to expand its research facility. After his sabbatical ended he return to Lund University to become a professor for his research in synchrotron light physics. In 1991, Lindau succeeded Bengt Forkman as director of the Max Lab. As a director, he was in charge of the creation of the second accelerator for synchrotron radiation research in MAX Lab.
Ingolf Lindau's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Atomic subshell photoionization cross sections and asymmetry parameters: 1 ⩽ Z ⩽ 103 (1985) (3380)
- New and unified model for Schottky barrier and III–V insulator interface states formation (1979) (751)
- Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States (1980) (583)
- Unified defect model and beyond (1980) (521)
- The probing depth in photoemission and auger-electron spectroscopy (1974) (325)
- The advanced unified defect model for Schottky barrier formation (1988) (279)
- Beamline I311 at MAX-LAB: A VUV/soft X-ray undulator beamline for high resolution electron spectroscopy (2001) (179)
- UPS studies of the bonding of H2, O2, CO, C2H4 and C2H2 on Fe and Cu☆ (1976) (156)
- Chemisorption and oxidation studies of the (110) surfaces of GaAs, GaSb, and InP (1978) (136)
- Photoelectron spectroscopic determination of the structure of (Cs,O) activated GaAs (110) surfaces (1983) (135)
- Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiation (1978) (132)
- Electron-spectroscopic studies of the early stages of the oxidation of Si (1979) (129)
- Photoemission studies of the silicon-gold interface (1979) (127)
- Electronic structure of ZnO(0001) studied by angle-resolved photoelectron spectroscopy (1997) (113)
- Synchrotron radiation studies of electronic structure and surface chemistry of GaAs, GaSb, and InP (1976) (112)
- Photoemission studies of high-temperature superconductors (1989) (111)
- Vacuum ultraviolet photoelectron spectroscopy of (NH4)2S‐treated GaAs (100) surfaces (1989) (104)
- The surface electronic structure of 3–5 compounds and the mechanism of Fermi level pinning by oxygen (passivation) and metals (Schottky barriers)☆ (1979) (97)
- X-ray photoemission spectroscopy (1974) (93)
- On the Fermi level pinning behavior of metal/III–V semiconductor interfaces (1986) (91)
- Photoemission and photon‐stimulated ion desorption studies of diamond(111): Hydrogen (1982) (80)
- Surface and interface states on GaAs(110): Effects of atomic and electronic rearrangements (1977) (79)
- Resonant Photoemission Studies of Mixed-Valence, Reduced-Moment, and Antiferromagnetic Cerium Compounds (1981) (79)
- Surface mixed valence in Sm and SmB/sub 6/ (1980) (79)
- Resonant valence-band satellites and polar fluctuations in nickel and its compounds (1982) (79)
- Fundamental studies of III–V surfaces and the (III–V)-oxide interface (1979) (76)
- Oxidation of Nb as studied by the uv-photoemission technique (1974) (75)
- New phenomena in Schottky barrier formation on III–V compounds (1978) (73)
- Electronic structure of the quenched superconductivity materials Y1−xPrxBa2Cu3O7−δ☆ (1989) (72)
- Extended-x-ray-absorption-fine-structure studies of low- Z atoms in solids and on surfaces: Studies of Si 3 N 4 , Si O 2 , and oxygen on Si(111) (1979) (69)
- Photoemission studies of clean and oxidized Cs (1983) (67)
- Interaction of oxygen with silicon d‐metal interfaces: A photoemission investigation (1982) (65)
- Photoemission studies of the interaction of oxygen with GaAs(110) (1982) (64)
- Giant enhancement of the valence band photoemission intensity in γ-Ce (1978) (62)
- Photoemission from Yb: Valence-change-induced Fano resonance (1980) (61)
- Formation of surface states on the (111) surface of diamond (1981) (60)
- Investigation of the mechanism for Schottky barrier formation by group III metals on GaAs(110) (1979) (60)
- Oxidation properties of GaAs(110) surfaces (1976) (59)
- Photoemission of gold in the energy range 30-300 eV using synchrotron radiation (1976) (59)
- Development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compounds (1982) (57)
- The temperature dependence of the interaction of oxygen with Pd(111); A study by photoemission and auger spectroscopy (1983) (55)
- Photoemission study of the adsorption of Cu on Pt(111) (1983) (55)
- CeRu/sub 2/ and CeCo/sub 2/ superconductors with 4f electrons (1982) (54)
- Determination of the oxygen binding site on GaAs(110) using soft-x-ray-photoemission spectroscopy (1975) (54)
- Photoemission studies of the surface states and oxidation of group IV semiconductors (1977) (54)
- Valence band studies of clean and oxygen exposed GaAs(100) surfaces (1978) (53)
- Column III and V elements on GaAs (110): Bonding and adatom‐adatom interaction (1980) (53)
- Compound formation and bonding configuration at the Si-Cu interface (1983) (51)
- In situ scanning tunneling microscopy studies of the underpotential deposition of lead on Au(111) (1989) (50)
- Experimental Verification of Optically Excited Longitudinal Plasmons (1971) (49)
- Surface 4d-->4f Photon Absorption and Surface Mixed Valence in Sm Metal (1978) (48)
- Experimental evidence for excitation of longitudinal plasmons by photons (1970) (48)
- Band gap variation and lattice, surface, and interface ‘‘instabilities’’ in Hg1−xCdxTe and related compounds (1983) (47)
- Cooper-minimum effects in the photoionization cross sections of 4 d and 5 d electrons in solid compounds (1983) (46)
- Models of column III and V elements on GaAs (110): Application to MBE (1981) (46)
- Electronic structure of the diamond (111) 1×1 surface: Valence‐band structure, band bending, and band gap states (1980) (45)
- Photoemission study of WC(0001) (1984) (45)
- Photoemission studies of the initial stages of oxidation of GaSb and InP (1979) (45)
- Oscillations in the compositional depth profile of Cu/Ni alloys: A study by UPS (1978) (45)
- Effect of low‐intensity laser radiation during oxidation of the GaAs(110) surface (1982) (45)
- Influence of acceptor and donor adsorbates (CO, K, NH3) on Pt surface core-level shifts (1983) (44)
- Schottky barriers on atomically clean n‐InP (110) (1985) (44)
- Image processing of multispectral x-ray photoelectron spectroscopy images (1989) (44)
- Semiconductor surface physics research in the Space Shuttle orbit (1977) (43)
- Si–Pd and Si–Pt interfaces (1980) (43)
- The advanced unified defect model and its applications (1988) (43)
- The Si(111)/Cu interface studied with surface sensitive techniques (1983) (40)
- Handbook on Synchrotron Radiation, Volume 2 (1989) (40)
- A New Retarding Field Electron Spectrometer with Differential Output (1973) (39)
- Nature of the valence states in silicon transition metal interfaces (1981) (39)
- Schottky barrier formation on iii-v semiconductor surfaces: A critical evaluation (1986) (39)
- Bonding of antimony on GaAs(110): A prototypical system for adsorption of column-V elements on III-V compounds (1983) (37)
- Si(111)-Pt interface at room temperature: A synchrotron radiation photoemission study (1982) (36)
- Carbon 1s studies of diamond(111): Surface shifts, hydrogenation, and electron escape lengths (1984) (35)
- CO chemisorption on Cu adlayers on Pt(111) (1983) (35)
- Fermi level pinning during oxidation of atomically clean n‐InP(110) (1986) (35)
- Synchrotron radiation as a new tool within photon‐beam technology (1975) (35)
- Surface structure of Bi2Sr2CaCu2O8+δ high‐temperature superconductors studied using low‐energy electron diffraction (1988) (35)
- Photoemission study of the surface electronic structure of Bi‐Ca‐Sr‐Cu‐O superconductors modified by Ne sputtering, Ag deposition, and heat treatment (1988) (34)
- Dominance of Atomic States in a Solid: Selective Breakdown of the Virtual Crystal Approximation in a Semiconductor Alloy, Hg 1-x Cd x Te (1982) (34)
- Photoemission studies of the oxidation of Cs. Identification of the multiplet structures of oxygen species (1982) (34)
- Systematics on the electron states of silicon d‐metal interfaces (1980) (34)
- SACLA hard-X-ray compact FEL (2012) (33)
- From synchrotron radiation to I-V measurements of GaAs Schottky barrier formation (1990) (32)
- New Fermi energy pinning behavior of Au on GaAs (110) suggesting increased Schottky‐barrier heights on n‐type GaAs (1981) (31)
- Photoemission study of the interaction of Al with a GaAs (110) surface (1979) (31)
- Some Photoemission Properties of Cu, Ag, Au and Ni (1971) (30)
- Solid-state effects on the valence-band 4d-photoionization cross sections at the Cooper minimum (1983) (30)
- Experimental results examining various models of Schottky barrier formation on GaAs (1985) (30)
- Core level photoelectron microscopy (1990) (29)
- Resonant photoemission in CeAl, Ce Si 2 , and La Si 2 (1982) (29)
- Electronic structure of single crystal C60 (1992) (29)
- Measurement of Subshell Photoionization Cross Sections of Ba near the4dThreshold (1981) (28)
- Differential Relaxation Effects and Multielectron Excitation for Molecularly Chemisorbed CO on Platinum (1977) (28)
- Systematics of interfacial chemical reactions on InP(110) (1984) (28)
- Photoemission study of Au overlayers on Pd(111) and the formation of a Pd-Au(111) alloy surface (1983) (27)
- An angle-resolved photoemission study of the chemisorption of chalcogens on Cu(100) (1980) (27)
- Bonding of Al and Ga to GaAs(110) (1980) (27)
- Evidence for a new type of metal-semiconductor interaction on GaSb (1978) (27)
- Exploiting energy‐dependent photoemission in Si d‐metal interfaces: The Si(111)–Pd case (1981) (26)
- Core level photoelectron microscopy with synchrotron radiation (invited) (1989) (26)
- Oxygen adsorption on the GaAs(110) surface (1980) (25)
- Characterization of the Pd/a‐Al2O3 supported cluster system (1990) (24)
- An angle-resolved photoemission study of the chemisorption of chalcogens on Cu(100) III. Cu(100) + p(2 x 2)S (1983) (24)
- Photoemission studies of the energy dependence of the bulk plasmon loss intensity in Si and Al (1979) (24)
- Photoemission investigation of the temperature effect on Si–Au interfaces (1980) (24)
- Chemical bonding, adatom-adatom interaction, and replacement reaction of column-3 metals on GaAs(110) (1983) (24)
- Surface segregation and surface electronic structure of PtCu alloys: Dependence on atomic coordination (1981) (23)
- Core-level photoemission of the Cs-O adlayer of NEA GaAs cathodes (1978) (23)
- First spectroscopic investigation of the Yb/Si interface at room temperature (1983) (23)
- Electronic structure of different Pt-Cu surfaces (1983) (23)
- Photoemission studies of the effect of temperature on the Au–GaAs(110) interface (1983) (22)
- Similarities in chemical intermixing at the Cu/InP and Cu/Si interfaces (1983) (22)
- Soft x‐ray core level photoemission study of the Cs/InP interface formation (1988) (22)
- Photoemission study of diamond (100) surface (1993) (22)
- New phenomenon in the absorption of oxygen on silicon (1978) (22)
- UPS and LEED studies of GaAs (110) and (111) As surfaces (1978) (22)
- Surface science lettersChemical reaction at the Ge(111)-Ag and Si(111)-Ag interfaces for small Ag coverages (1981) (21)
- The Constant-thickness Zone Plate as a Variational Solution (1984) (21)
- High Resolution x-Ray Spectroscopy Using Synchrotron Radiation: Source Characteristics and Optical Systems (1977) (21)
- Determination of the escape depth of photoemitted electrons in gold in the energy range 25–75 eV by use of synchrotron radiation (1976) (21)
- Photoemission studies of the electronic structure of III–V semiconductor surfaces (1977) (21)
- Abstract: Adsorption of oxygen on Cu(100)−A study by angularly resolved ultraviolet photoemission spectroscopy (ARUPS) (1978) (20)
- Morphological study of Ag, In, Sb, and Bi overlayers on GaAs(100) (1990) (20)
- Oxidation of Si(111), 7×7 and 2×1: A comparison (1981) (20)
- Studies of Surface Electronic Structure and Surface Chemistry Using Synchrotron Radiation (1977) (20)
- The energy dependence of the 4d photoionization cross-section of In and Sb (1976) (20)
- Photoemission studies of the Au–InP(110) interface (1983) (20)
- Oxygen sorption and excitonic effects on GaAs surfaces (1977) (19)
- Photoemission investigation on the oxidation of Si(111)Ag interfaces and its relation to the interface structure (1982) (19)
- L-edge x-ray absorption resonances in palladium silicides and palladium metal (1983) (19)
- Extended X-ray absorption fine structure in photoelectron emission (1984) (19)
- Fermi energy pinning behavior and chemical reactivity of the Pd/GaAs (110) interface (1984) (19)
- Oxidation of ordered and disordered GaAs(110) (1979) (19)
- Ultraviolet-photoemission studies of beta-brass (1971) (19)
- Electronic structure of ceramics and thin‐film samples of high Tc Bi2Sr2CaCu2O8+δ superconductors: Effects of Ar+ sputtering, O2 exposure, and Rb deposition (1988) (19)
- Ge-Ag interface at room temperature: An energy-dependent photoemission study (1982) (19)
- Determination of the decay channel of the 4d. -->. 4f resonance in Tm (1981) (18)
- Electron escape depth variation in thin SiO2 films measured with variable photon energy (1984) (18)
- Electronic properties of metal-rich Au-Si compounds and interfaces (1982) (18)
- Ag-InP(110) interface: Photoemission studies of interfacial reactions and Schottky-barrier formation (1984) (18)
- High resolution electron energy analyser at ultrahigh vacuum conditions (1971) (18)
- Schottky barrier formation and intermixing of noble metals on GaAs(110) (1983) (18)
- Superconductivity, magnetism and valence fluctuations in rare earth-transition metal borides (1985) (18)
- Photoemission studies of room-temperature oxidized Ga surfaces☆ (1982) (18)
- Electron spectroscopy study of the heavy Fermion compound URu2Si2 (1987) (17)
- Optical Plasma-Resonance Absorption in Thin Films of Silver and Some Silver Alloys (1970) (17)
- Photoemission of adsorbed CO and H2O on Pt: Valence band studies (1981) (17)
- Chemical reaction at the annealed Si/Yb interface (1983) (17)
- Energy dependence of3d,4d,5d, and4fphotoionization partial cross sections (1979) (17)
- Valance-Band photoemission intensities in thorium dioxide (1989) (17)
- High Schottky barriers on and thermally induced processes at the Au– GaAs(110) interface (1982) (17)
- Diffusion of Ag and Hg at the Ag/(Hg, Cd)Te interface (1986) (16)
- Soft-x-ray resonant-photoemission study of mixed-valence TmSe (1984) (16)
- Chemical reactions at the noble and near‐noble metal/InP interfaces: Comparison to Si and GaAs (1984) (16)
- Room temperature stability of cleaved Hg1−xCdxTe (1982) (16)
- Small area photoemission and photoabsorption measurements using a photoelectron microscope (1990) (16)
- Reversibility of Fermi level pinning (1988) (16)
- Physics of, and science with, the x-ray free-electron laser : 19th Advanced ICFA Beam Dynamics Workshop, Arcidosso, Italy, 10-15 September 2000 (2001) (16)
- Comparative uptake kinetics of N2O and O2 chemisorption on GaAs(110) (1987) (15)
- Order-disorder effects in GaAs(110)-oxygen interaction: A LEED-ups analysis (1979) (15)
- The diamond (111) surface: A dilemma resolved (1983) (15)
- The interaction of thin Au and Al overlayers with the GaAs(110) surface (1980) (15)
- EXAFS studies of the bonding geometry of oxygen on Si(111) using electron yield detection (1979) (15)
- Early work with synchrotron radiation at stanford. (1997) (15)
- Summary Abstract: The silicon/gadolinium interface at room temperature (1985) (15)
- Chemical and electrical properties at the annealed Ti/GaAs(110) interface (1988) (15)
- Noble metal interactions with the InP(110) surface (1984) (15)
- Synchrotron radiation studies of CO and H 2 O adsorbed on Pt (1981) (14)
- Abrupt interfaces on InP(110): Cases of Sb and Sn (1989) (14)
- Photoelectron branching ratio in the 5d subshell of Pt, Au and Pb measured with synchrotron radiation (1980) (14)
- Photoemission core level shifts in Gd silicides (1991) (14)
- Photoemission investigation of Sb/GaAs(110) interfaces (1988) (14)
- AES sputter profiles of anodic oxide films on (Hg,Cd)Te (1982) (14)
- Photoenhancement mechanism for oxygen chemisorption on GaAs(110) using visible light (1988) (14)
- Low energy electron loss spectroscopy of Si–Ge interfaces (1981) (14)
- Aluminum Schottky barrier formation on arsenic capped and heat cleaned MBE GaAs(100) (1984) (14)
- Intermixing at the early stage of the Si(111)/Ag interface growth (1982) (14)
- Lack of temperature dependence of Fermi level pinning at the Cu/InP(110) interface: A comparison with Cu/GaAs and other systems (1988) (14)
- A photoemission study of the Si(111)/Gd interface: A comparison with the bulk silicides (1987) (13)
- Do the Au 5d-bands narrow at the surface: Comparison with Au alloys (1977) (13)
- Synchrotron radiation study of the photoionization cross sections for the whole valence band of 2H-MoS2 (1986) (13)
- Possible oxygen chemisorption configurations on the Si(lll) 2×1 surface (1981) (13)
- Relationship of heat of chemisorption to π‐ and σ‐level shifts as measured by photoemission (1976) (13)
- Resonant enhancement of rare-earth valence-band photoemission at3dabsorption edges (1984) (13)
- EVIDENCE OF PSEUDOGAP RELATED CORE LEVEL SHIFTS IN BI2SR2CA1-XYXCU2O8+DELTA (1997) (13)
- Synchrotron radiation studies of the effect of thermal treatment on the Si(111)-Yb interfaces (1986) (13)
- Interaction of Al overlayers with the InP(110) surface (1984) (13)
- Summary Abstract: The Si(111)/Mo interface as studied with synchrotron radiation photoemission and Auger electron spectroscopies (1982) (13)
- Kinetic study of Schottky barrier formation of In on GaAs(110) surface (1986) (12)
- A comparison between X-ray absorption spectroscopy and Bremsstrahlung Isochromat Spectroscopy: The empty states of Pd−Al alloys and Pd2Si (1985) (12)
- Surface and bulk 4f-photoemission spectra of CeIn 3 and CeSn 3 (1997) (12)
- Pd2Si surfaces thermally enriched in silicon: Evidence of new Si:Pd bonds (1981) (12)
- The unified model for Schottky barrier formation and MOS interface states in 3–5 compounds☆ (1981) (12)
- Chemical and electronic properties of the Pt/GaAs(110) interface (1987) (12)
- Electron beam induced Hg desorption and the electronic structure of the Hg depleted surface of Hg1−xCdxTe (1986) (12)
- Oxygen chemisorption on GaAs(110): Surface or subsurface growth? (1986) (12)
- CeB 6 and CeCu 6 single crystals probed by resonant photoemission spectroscopy: A comparison between the two electronic structures (1997) (12)
- Band bending at Al, In, Ag, and Pt interfaces with CdTe and ZnTe (110) (1990) (11)
- Electronlike Fermi surface in bismuth cuprates determined by ARPES: Bulk versus surface photoemission (2000) (11)
- An All Wiggler and Undulator Synchrotron Radiation Source (1983) (11)
- The intrinsic linewidth of the 4f levels in gold as determined by photoemission (1975) (11)
- Photoemission studies of the Cu-InP(110) interface (1983) (11)
- Surface core level shifts on InP(110) (1989) (11)
- Room temperature exchange reaction at the Al–InP(110) interface: Soft x‐ray photoemission studies (1983) (11)
- Metal cluster formation on GaAs(110): A temperature dependence study (1989) (11)
- CdTe and ZnTe metal interface formation and Fermi-level pinning (1989) (11)
- Comparative study of activated oxygen uptake on HgTe, Hg0.69Cd0.31Te, and CdTe (1985) (11)
- Evidence of palladium phosphide formation at the Pd/InP(110) interface (1983) (11)
- Photoemission studies of clean and oxidized Nb and Nb3Sn (1982) (11)
- Absence of band-gap surface states on clean amorphous silicon (1981) (11)
- Polarisation-dependent X-ray absorption in high- and low-Tc Bi2Sr2Can-1CunO4+2n superconductors (1993) (11)
- Valence-band and resonance-photoemission study of La{sub 2}CuO{sub 4+x} single crystals (1997) (11)
- The energy dependence of photoelectron peak intensities, Part I: Experimental methods (1985) (10)
- Synchrotron-based imaging with a magnetic projection photoelectron microscope (1991) (10)
- Chemical reaction and anion trapping at the Yb/GaAs(110) interface (1986) (10)
- Surface studies of the tungsten dispenser cathode (1982) (10)
- Temperature‐dependent pinning at the Al/n‐GaAs(110) interface (1986) (10)
- Surface extended x‐ray adsorption fine structure studies of the Si(001) 2×1–Sb interface (1991) (10)
- Cr on GaAs (110): The effect of electronegativity on the Schottky barrier height (1985) (10)
- Comparative studies of oxygen adsorption on GaAs(110) surfaces with ultrathin aluminum and cesium overlayers (1979) (10)
- From small-area to imaging photoabsorption spectroscopy (1990) (10)
- Magnetic behaviour of ultra-thin iron overlayers on palladium (111) (1982) (10)
- CO chemisorption on PtCu surfaces. I: CO on (1×3) Pt0.98Cu0.02(110) (1983) (10)
- Nature of the valence band states in Bi sub 2 (Ca, Sr, La) sub 3 Cu sub 2 O sub 8 (1990) (10)
- Low‐temperature alkali metal/III–V interfaces: A study of metallization and Fermi level movement (1989) (10)
- The interaction of Ag, In and Al overlayers with InP (110): surface and diode studies of the effect of indium interlayers (1986) (9)
- Optical transitions between conduction bands in copper studied by photoemission (1971) (9)
- ELECTRONIC-STRUCTURE OF NIO(1 0 0) WITH ADSORBED NA (1993) (9)
- Autoionization decay following a strong 5 p -hole- 5 d -electron interaction in fcc Yb metal (1984) (9)
- SURFACE AND INTERFACES OF HGCDTE. WHAT CAN WE LEARN FROM 3-5'S? WHAT IS UNIQUE WITH HGCDTE? (1982) (9)
- Photoemission study of Tm metal (1981) (9)
- Initial stages of oxide formation on HgCdTe exposed to activated oxygen (1983) (9)
- The interaction of Pd with the InP(110) surface (1984) (9)
- Evidence for two pinning mechanisms with noble metals on InP(110) (1989) (9)
- Temperature control of morphology and barrier formation at the In/GaAs(110) interface (1989) (9)
- Photoemission studies of mixed valence in Yb3Si3, YbSi and Yb5Si3: Equivalent versus inequivalent Yb sites (1987) (9)
- Photoemission from the Si/La interface (1988) (9)
- Comments on UPS studies of oxygen chemisorbed on group VIII transition metal surfaces (1978) (8)
- Investigation of In contacts on atomically clean GaAs(110) surfaces (1990) (8)
- Metal-dielectric transition in Ba0.6K0.4BiO3-y single crystals studied by scanning photoelectron microscopy (1997) (8)
- Photoemission as a Tool to Study Solids and Surfaces (1980) (8)
- Electronic structure of the La1 + xBa2 - xCu3O7 + δ system studied by photoelectron spectroscopy (1989) (8)
- Surface science lettersSurface segregation and surface electronic interactions in PtCu (1982) (8)
- Strong 5p hole-5d electron interaction in the electron emission processes for Eu and Yb metals (1985) (7)
- The reactive Cr/InP and Mn/InP interfaces (1985) (7)
- An exploratory study of the reactive Ni-GaAs (1 1 0) interface (1984) (7)
- Ultraviolet photoemission spectroscopy of surfaces and surface sorption (1976) (7)
- Observation of characteristic energy losses in UV photoemission spectra from Li and Al (1971) (7)
- Detailed x-ray photoemission study of the valence band of Cu, Ag and Au (1972) (7)
- Summary Abstract: Adsorption of Cs on the GaAs(110) surface (1988) (7)
- Summary Abstract: Natural band lineups in II—VI compound semiconductors and their alloys: A study using core level photoemission measurement in the alloy (1988) (7)
- Systematics of metal contacts to Hg1−xCdxTe (1987) (7)
- Core photoemission study of the early formation stage of Si(111)−Ba interface (1985) (7)
- Resonance of 4f partial photoionization cross section of Yb and Eu near the 5p threshold (1984) (7)
- CO chemisorption on PtCu surfacesIII. CO on PtCu(111) (1983) (7)
- A photoemission spectroscopy and X-ray absorption study of Bi(2)Sr(2)CaCu(2)O(8) single crystal with adsorbed Cs: On the origin of states affected by electron doping and evidence for spatially resolved electron doping (1996) (7)
- Experimental confirmation of finer details in the photoemission spectra of cesiated copper (1971) (7)
- The Si/GaAs (110) heterojunction: Strain, disorder, and valence‐band discontinuity (1987) (7)
- Interaction of overlayers of Al and Rb with single‐crystalline surfaces of Bi2Sr2CaCu2O8 (1990) (7)
- Intrinsic surface binding energy shifts in Yb metal (1984) (7)
- The Si/GaAs(110) heterojunction discontinuity: Amorphous versus crystalline overlayers (1987) (7)
- Design of an ultralow coverage metal evaporator based on a geometric factor (1986) (7)
- A Study of Spear as a Dedicated Source of Synchrotron Radiation (1977) (6)
- Chemical reaction and Schottky barrier formation at the Ti/InP(110) and Sn/InP(110) interfaces: Reactive versus nonreactive cases (1987) (6)
- A study of the electronic properties of cleaved InP surfaces induced by oxygen exposure (1986) (6)
- Oxygen adsorption and the surface electronic structure of GaAs (110) (1978) (6)
- A photoemission study of clean and oxidized Nb3Sn (1982) (6)
- Photoemission spectroscopy of ordered overlayers on GaP (110) (1990) (6)
- Surface science lettersChemisorption-induced Pt 4f surface core level shifts (1982) (6)
- Scanning tunneling microscopy of x‐ray optics (1988) (6)
- Valence-band densities of state in NiAs (1987) (6)
- Role of Hg bonding in metal/Hg1−xCdxTe interface formation (1986) (6)
- Fermi-level pinning at the interfaces of Sb, Sn, and Ge on GaAs(110) surfaces (1989) (6)
- ELECTRONIC STRUCTURE OF CESE PROBED BY RESONANT PHOTOEMISSION SPECTROSCOPY: A TEST CASE FOR THE SINGLE-IMPURITY ANDERSON HAMILTONIAN (1998) (6)
- Interfacial chemistry of metals on CdTe and ZnTe (110) (1990) (6)
- Summary Abstract: Surface composition of a thin Au film on Si surface (1988) (6)
- Chemical reaction at the In on GaAs(110) interface (1986) (6)
- Surface Heating in a Lacquer-Coated Mirror Irradiated with Undulator Light (1986) (5)
- Angle resolved photoemission on NiO: on the nature of the valence band (1995) (5)
- Oxidation studies of impregnated dispenser cathodes (1982) (5)
- Bonding of column 3 and 5 atoms on GaAs (110) (1981) (5)
- ELECTRON SPECTROSCOPY STUDY OF THE HEAVY FERMION COMPOUND U2Zns7 (1986) (5)
- Yb valence in Yb1-xCaxAl2 pseudobinary alloys via Yb LIII X-ray absorption spectroscopy (1990) (5)
- Surface and bulk 4f photoemission spectra of CeIr 2 (1999) (5)
- UPS study of the electronic structure of Hg1−xCdx Te: Breakdown of the virtual crystal approximation (1982) (5)
- Photoemission studies of As and its room-temperature oxidation (1982) (5)
- Chemical reactions at the Si/GaAs(110) and Si/InP(110) interfaces: Effects on valence‐band discontinuity measurements (1988) (5)
- Surface and bulk valence in Yb3Si5 (1985) (5)
- Surface electronic structure of the organic superconductor κ-(ET)2Cu(NCS)2 studied via photoemission microscopy (2004) (5)
- Low temperature properties of CeIr3B2 and Ulr3B2 (1985) (5)
- Design process and modeling studies of SSRL beam line wunder (1984) (5)
- The interface investigated by means of electron spectroscopies (1985) (5)
- Solid-state effects on the asymmetry parameter and on the partial photoionization cross section of ag4d valence-band at the cooper minimum (1988) (5)
- A Unified Approach To The Theory And Design Of Optimum Transmission Diffraction Systems In The Soft X-Ray Range (1984) (5)
- Photoemission study of the reactive Pd/InP(110) interface (1986) (5)
- Reply to "Oxidation properties of GaAs (110) surfaces" by R. Ludeke (1977) (5)
- Derivation of the optical constants of gold from transmission diffraction measurements in the 280-640-eV range (1984) (5)
- Synchrotron radiation research: Recent developments (1978) (5)
- Reactive germanium/transition metal interfaces investigated with synchrotron radiation photoemission: Ge/Ni and Ge/Pd (1981) (5)
- Direct transition and matrix element effects in the ultraviolet-photoemission-spectroscopy spectra of Cu-Ni (110) (1980) (4)
- Comparative study of Fermi energy pinning and adatom bond character: Antimony versus the column 3 elements (Al, Ga, In) on GaAs (110) and GaSb (110) (1985) (4)
- Photoemission from some metals and semiconductors in the energy range 5–350 eV (1976) (4)
- Unique band bending at the Sb/InP(110) interface (1989) (4)
- The energy-dependence of the Au 4f photoionization cross-section (1980) (4)
- Electronic and structural properties of the Cu - Bi2CaSr2Cu2O8 interface (1991) (4)
- An angle-resolved photoemission study of the chemisorption of chalcogens on Cu(100): I. The clean surface (1980) (4)
- Photoemission study of the electronic structure (Pr0.2La0.8)(Ba1.875La0.125)Cu3O7−gd (1989) (4)
- SSRL beam line wunder: Design and planning (1983) (4)
- Photoemission studies of a clean and oxidized niobium-aluminum alloy using synchrotron radiation (1983) (4)
- Co chemisorption on PtCu surfaces II. (1 × 1)-CO/Pt0.98Cu0.02(110) (1983) (4)
- Annealing Ag on GaAs: Interplay between cluster formation and Fermi level unpinning (1989) (4)
- Resonant photoemission at the 5p threshold in La, Pr, Sm and Tb (1986) (4)
- Surface degradation of InxGa1−xN thin films by sputter-anneal processing: A scanning photoemission microscope study (2003) (4)
- The effect of surface oxygen on the intermixing and Schottky barrier at GaAs(110)–Au interfaces (1983) (4)
- Applications of transmission X-ray optics (1986) (4)
- Semiconductor surface core level shifts by use of selected overlayers (1990) (4)
- Photoemission studies of Si(1 1 1)-Yb interfaces: What can be learned from Yb mixed valence (1986) (4)
- Summary Abstract: Temperature effects at the Sb/GaAs(110) interface (1988) (4)
- X-ray absorption spectroscopy of platinum silicides: The L2,3 and M2,3 edges of platinum (1986) (4)
- Temperature effects on morphology, reaction, and Fermi level movement at Ga/InP(110) interface (1989) (3)
- Summary Abstract: Chemical reaction at the In on GaAs (110) interface: A synchrotron radiation photoemission study (1987) (3)
- Auger analysis of Si sputtered with Ar+ ions in an F2 ambient (1989) (3)
- Chemical Reaction at the Ni/Inp (110) and Ni/GaAs (110) Interfaces * (1983) (3)
- Interfacial properties of metal overlayers on III–V compounds (1987) (3)
- Yb mean valence in chemically compressed Yb1-xScxAl2 pseudobinary alloys: An X-ray absorption spectroscopy investigation (1990) (3)
- Changes in O2 and CO surface chemistry with increasing carbon concentration on W(100) (1985) (3)
- Reply to “surface photovoltage measurements and Fermi level pinning: comments on ‘development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compounds’” (1982) (3)
- The electronic structure of Bi2.0Sr1.8La0.3Ca0.8Cu2.1O8+δ superconductors studied using ultraviolet and X-ray photoelectron spectroscopy (1989) (3)
- Summary Abstract: Angle‐resolved photoemission results from WC(0001) (1982) (3)
- Photoemission Studies Of The CU-GaAs(ll0) Interface Formation * (1983) (3)
- FRONTIERS IN SURFACE AND INTERFACE ANALYSIS. (1977) (3)
- In situ Scanning Tunneling Microscopy Studies of the Underpotential Deposition of Lead on Au(111). (1989) (3)
- X-ray absorption study of oxygen in the high-Tc superconductor Bi2Sr2CaCu2O8 near the interfaces to Cu, Ag and Au (1996) (3)
- Bonding characteristics of the √3°√3 Ag/Si interface identified by the energy dependence of the photoionization cross section (1987) (3)
- Photoemission study of the Bi2CaSr2Cu2O8 superconductor with Cu, Ag and Au overlayers (1993) (3)
- An Investigation Of The Cause Of Initial Band Bending Of A Cleaved Clean n-GaAs(llO) Surface (1985) (3)
- On the aspects of GaAs initial stage band bending (1990) (3)
- Summary Abstract: Cation bonds in Hg1−xCdxTe (1982) (3)
- Unusual low-temperature behavior of Fermi level movement at the Sb/GaAs interface (1988) (3)
- Erratum: New and unified model for Schottky barrier and III–V insulator interface states formation [J. Vac. Sci. Technol. 16, 1422 (1979)] (1980) (3)
- Chemisorption-induced Pt 4f surface core level shifts (1982) (3)
- Angle resolved photoemission study of the alloy scattering effect in Hg1−xCdxTe (1987) (3)
- Summary Abstract: Activated oxygen uptake on HgTe, CdTe, and Hg0.69Cd0.31Te (1984) (3)
- International Conference on Insertion Devices for Synchrotron Sources, Stanford, CA, October 27-30, 1985, Proceedings. Volume 582 (1986) (3)
- Erratum: Microscopic metal clusters and schottky-barrier formation (1987) (3)
- Angle‐resolved photoemission studies of oxide formation on Cu(100) (1982) (2)
- Summary Abstract: Oxidation study of the Si(111) surface with an ordered Ag overlayer (1986) (2)
- The nature of the 7×7 reconstruction of Si(111): As revealed by changes in oxygen sorption from 2 × 1 to 7×7☆ (1981) (2)
- Variational design of zone plates for the VUV and soft X-ray ranges (1983) (2)
- Angle-resolved photoemission study of NiO and CoO (1989) (2)
- Disruption, Metallization, and Electrical Properties of Metal GaAs and InP Semiconductor Interfaces (1989) (2)
- Summary Abstract: Metal core level shifts induced by CO chemisorption (1982) (2)
- Comparison of Low Intensity Laser Enhancement of Oxygen Chemisorption on GaAs Using O 2 and N 2 O (1986) (2)
- Condensed matter physics using a coherent X-ray source (1997) (2)
- Surface electronic structure of CeCo2, CeRh2 and CeRh3 probed by valence band resonant photoemission spectroscopy (1995) (2)
- Summary Abstract: Ni and Pd Schottky barriers on GaAs(110) (1985) (2)
- Fine structure details in the LMM Auger spectra of germanium (1973) (2)
- Resonant photoemission study of Ba 1 − x K x BiO 3 single crystals (1997) (2)
- O KVV Auger emission versus resonant photoemission at the O K edge of high-Tc superconductors (1998) (2)
- Kinetic effects in the overgrowth of Gd on Si: A photoemission study (1989) (2)
- Off-Axis Radial Properties Of Undulator Light (1986) (2)
- Use of temperature to study the nature of interface states and Fermi level pinning with metals on GaAs(110) (1989) (2)
- Summary Abstract: Unusual interfacial kinetics and Schottky barrier formation of thallium on the GaAs(110) surface (1984) (2)
- Photoemission spectromicroscopy study of a Bi2Sr2CaCu2O8+Φ single crystal (2002) (2)
- Chemical reaction at the Ge(111)-Ag and Si(111)-Ag interfaces for small Ag coverages (1981) (2)
- Growth Mode And Initial Stage Schottky Barrier Formation At The In/GaAs Interface: A Photoemission Study (1988) (2)
- Ultraviolet-photoemission studies of niobium (1974) (2)
- Erratum: ``Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2×1-Sb'' [Phys. Rev. Lett. 65, 3417 (1990)] (1991) (2)
- Unusual behavior of Hgl−xCdxTe and its explanation☆ (1983) (2)
- Optical corrections in measurements of photoionization cross sections from solids in the soft X-ray range (1986) (2)
- Electronic structure of Pb sub 2 Sr sub 2 PrCu sub 3 O sub 8 as studied by resonant photoemission spectroscopy (1989) (2)
- Photoemission studies of the room‐temperature Si/Hg1−xCdxTe, Si/HgTe, and Si/CdTe interfaces (1987) (2)
- Electron Spectroscopy of Heavy-Fermion Materials (1990) (2)
- Photoelectron spectroscopy in the energy region 30 to 800 eV using synchrotron radiation (1979) (2)
- Design And Modeling Considerations For SSRL Beam Line Wunder (1984) (2)
- Photoelectron Spectroscopy of the Si/Eu Interface Using Synchrotron Radiation (1985) (1)
- Photoemission studies of alloys (1974) (1)
- Surface and bulk 4f electronic structure of CeIn3 and CeSn3 (1998) (1)
- Structural studies of metal-semiconductor interfaces by means of surface extended X-ray absorption edge fine structure☆ (1983) (1)
- Introducing two new Main Editors of Journal of Synchrotron Radiation (2021) (1)
- Photoelectron escape depth in Bi2Sr2CaCu2O8+x (2003) (1)
- Synchrotron Radiation Research: A Survey of Recent Developments (1977) (1)
- Resonant photoemission study of La1−xSrxMnO3 single crystals (2005) (1)
- 12th X-ray Absorption Fine Structure International Conference (XAFS12) (2005) (1)
- Surface and electronic structure of Bi‐Ca‐Sr‐Cu‐O superconductors studied by LEED, UPS and XPS (2008) (1)
- Resonance Effects in the Valence-Band Spectra of Yb2O3 (1981) (1)
- Photoemission Studies of the Ag/InP(110) Interface: Interfacial Reactions and Schottky Barrier Formation (1983) (1)
- Valence band resonant photoemission spectroscopy on Ce compounds at Ce 3d-4f and 4d-4f thresholds: surface vs. bulk electronic structure (1995) (1)
- Exploiting photon energy dependence in photoemission from Si(111)-Mo interface (1983) (1)
- Photoemission and Photoelectron Spectra (2004) (1)
- The Diamond (111) Surface: A Dilemma Resolved | NIST (1983) (1)
- Properties, Sources, and Research Applications of Synchrotron Radiation (1977) (1)
- A high yield LiF monochromator system for inverse photoemission spectroscopy (1990) (1)
- IVa-6 studies of Si/SiO2interfaces by Auger sputter profiling and photoelectron spectroscopy using synchrotron radiation (1977) (1)
- Synchrotron radiation instrumentation : proceedings of the International Conference on X-ray and VUV Synchrotron Radiation Instrumentation, Stanford University, CA, July 29-August 2, 1985 (1986) (1)
- Optical constants of thin films by transmission diffraction measurements (1982) (1)
- Absence of core-exciton-induced resonant photoemission from InP(110) (1984) (1)
- The Ge/Au interface investigated with photoemission at the cooper minimum (1983) (1)
- Interrelation Between Hg1-xCdxTe Interfaces, Defects, Oxidation, Band Structure, And The Strength Of The Hg-Te Bond (1983) (1)
- Lack of solid state effects in the Cr3d photoionization cross section (1988) (1)
- Phase separation in the Ge:As system studied by X-ray photoemission (1973) (1)
- STUDIES OF Si/SiO//2 INTERFACES BY AUGER SPUTTER PROFILING AND PHOTOELECTRON SPECTROSCOPY USING SYNCHROTRON RADIATION. (1977) (1)
- Linac coherent light source at SSRL/SLAC: source characteristics and scientific opportunities (2000) (1)
- Experimental Verification of Many-Electron Effects in the 4d, 5s, and 5p Partial Photoionization Cross Sections of Cs (1978) (1)
- Resonant photoemission from the Ni–GaAs(110) interface (1989) (1)
- Abstract: Bonding states of oxygen on silicon (1978) (1)
- Summary Abstract: Structure of ordered Sb overlayers on GaAs(110) (1982) (1)
- Experimental determination of the bonding of column 3 and 5 elements on GaAs (1982) (1)
- Surface Composition of Copper-Nickel Alloys (1980) (1)
- Investigation of interface states and fermi level pinning mechanisms with metals on InP(110) surfaces (1990) (1)
- Photoemission Cross Sections (1992) (1)
- Summary Abstract: Photoemission study of the annealed Au/Si interface (1986) (1)
- Studies of interfacial structure in WC multilayers (1986) (1)
- New considerations of 3-5 MOS and other device considerations (1981) (1)
- Summary Abstract: Bonding at the K/Si(100)2×1 interface: A surface extended x‐ray absorption fine‐structure study (1988) (1)
- The energy dependence of the 4d partial photoionization cross section in metallic Ag and in Ag atoms on Si at the cooper minimum and near the 4d threshold (1989) (1)
- Photoemission Study Of The Surface Chemistry And The Electronic Structure Of Copper Oxide Superconducting Thin Films (1988) (1)
- Valence band ARPES study of La1–xSrxMnO3 single crystals (2004) (1)
- The Stanford XFEL project - LCLS (1999) (1)
- Photoemission Study of the Electronic Structure of Copper Oxide Superconductors (1987) (1)
- Summary Abstract: Binding energy shifts from alloying at metal/II–VI compound semiconductor interfaces (1987) (1)
- A New Method for Measuring Thin‐Tilm Optical Constants Using Transmission Gratings in the Soft X‐ray Range (2008) (0)
- Yb valence behaviour in mixed-valent Y1-xYbx alloy synthesized at high pressure (2008) (0)
- Semiconductor Electrodes, 62. Photoluminescence and Electroluminescence from Manganese-Doped ZnS and CVD ZnS Electrodes (1989) (0)
- WP-B5 the mechanism of Schottky-barrier pinning on III-V semiconductors (1978) (0)
- Investigation of PMMA resist residues using photoelectron microscopy (2002) (0)
- Optimum zone plates for the soft X-ray range (1984) (0)
- PHOTOELECTRON SPECTROSCOPY FOR VALENCE BAND OF SILVER AND GOLD FILMS ON GALLIUM ARSENIDE (1983) (0)
- Angle-resolved photoemission spectroscopy study of Bi2Sr2CaCu2−xNixO8+δ: states near the zone center (2001) (0)
- Antimony on Diamond: A Comparison to Sb/Si and Sb/Ge (1992) (0)
- The Oxidation Behavior of the √3×√3 Ag and Au/Si(111) Surfaces at Room Temperature Studied by Photoemission (1985) (0)
- Photoemission studies of clean and oxygen-covered Pt 6(111) × (100)☆ (1980) (0)
- EXAFS study of quasicrystalline Ti41.5Zr41.5Ni17 (2008) (0)
- High Quality Fraunhofer Diffraction Spectra Taken at SSRL in the Soft X‐Ray Range (2008) (0)
- Summary Abstract: Photoemission studies on thulium (1981) (0)
- Electronic structure of Sm surface studied by synchrotron-radiation-excited-photoelectron spectroscopies (1979) (0)
- Spectroscopic evidence of two‐dimensional character of the 90 K Bi2(Sr,La,Ca)3Cu2O8 superconductors (1989) (0)
- Fundamental and Practical Studies of Metal Contacts on Mercury Zinc Telluride (1989) (0)
- Comparative uptake kinetics of N 2 O and O 2 chemisorption on GaAs(110) (1987) (0)
- Surface electronic structure of Zn(0001) studied by angle resolved photoelectron spectroscopy (1996) (0)
- Physics of Metal Overlayers on Semiconductors (1988) (0)
- Studies of Surfaces and Interfaces on III-V Compounds Using UV (Ultraviolet) and Soft X-Ray Excitation. (1982) (0)
- HAXPES at the Dawn of the Synchrotron Radiation Age (2016) (0)
- Novel Approaches to Passivation of Si for VHSIC - Based on Fundamental Studies. (1985) (0)
- Fundamental Studies of the Morphology, Chemistry, and Electrical Properties of Metals on GaAs and other III-V Semiconductor Compounds (1992) (0)
- Surface segregation and surface electronic interactions in PtCu (1982) (0)
- Electronic structure of the quenched superconductivity materials Y/sub 1-x/Pr/sub x/Ba/sub 2/Cu/sub 3/O/sub 7-delta/ (1988) (0)
- The Use of Soft X-Ray Photoemission Spectroscopy to Study the Adsorption of Oxygen on the (110) Surface of Gallium Arsenide and Gallium Antimonide (1978) (0)
- Workshop report on new directions in soft x-ray photoabsorption (1984) (0)
- Photoemission and Photoelectron Spectroscopy (2009) (0)
- Determination of the surface and bulk 4f spectral functions in CeIr compounds (1996) (0)
- Beam line and associated work. Final report, 1 July 1982-30 September 1985 (1986) (0)
- Photoelectron spectromicroscopy study of Bi2Sr2CaCu2O8+x single crystal (2002) (0)
- Report of the working group on physics of, and physics with, high energy density beams (1999) (0)
- Electronic structure of single crystalline Bi2(Sr,Ca,La)3Cu2O8 (1989) (0)
- Study of the electronic surface states of III-V compounds and silicon. Final technical progress report 1 Oct 78-30 Sep 82. [HgCdTe] (1982) (0)
- The Electronic and Atomic Structure of Diamond Surface and Effects of Hydrogen Termination (1981) (0)
- High resolution LMM Auger spectra of germanium (1973) (0)
- Aluminum and gold deposition on cleaved single crystals of Bi2CaSr2Cu2O8 superconductor (2008) (0)
- Scanning photoelectron microscopy study of as-grown and heat-treated chemical vapor deposition boron-doped diamond films (2002) (0)
- Electronic structure of the quenched superconductivity of materials Y(sub 1-x)Pr(sub x)Ba2Cu3O(sub 7-delta) (1988) (0)
- Electronic structure of hard superconductors. Final report (1974) (0)
- Electron Spectroscopy Studies of High Temperature Superconductors: Y1−xPrxBa2Cu3O7−δ (1989) (0)
- An open-access future for Journal of Synchrotron Radiation – Editorial from the Main Editors and IUCr Journals Editor-in-Chief (2021) (0)
- The Si(111)-7×7/Eu interface investigated by means of electron spectroscopies (1985) (0)
- Synchrotron Stories from Stanford—From a Parking Lot to First Beam (2015) (0)
- Anisotropy of the electronic structure of low-dimensional Sr(Ca)CuO2 single crystals studied by scanning photoelectron spectromicroscopy (2002) (0)
- Research and development of HgZnTe as an infrared material (1989) (0)
- Interaction of Thin Ga Overlayer with InP(110): a Photoemission Study (1988) (0)
- Surface science lettersPhotoemission investigation on the oxidation of Si(111)-Ag interfaces and its relation to the interface structure (1982) (0)
- Observation of a Fermi Edge like Feature and Beam Induced Damage of the Organic Superconductor κ-(ET)_2Cu(SCN)_2. (2001) (0)
- CO chemisorption on PtCu surfaces (1983) (0)
- Electron spectroscopy study of the heavy fermion compound U/sub 2/Zn/sub 17/ (1986) (0)
- Concluding remarks - international conference on the formation of semiconductor interfaces (1986) (0)
- Electron spectroscopy studies of high temperature superconductors: Y/sub 1/minus/x/Pr/sub x/Ba/sub 2/Cu/sub 3/O/sub 7/minus/delta/ (1989) (0)
- Anisotropy of the electronic structure of low-dimensional Sr(Ca)CuO single crystals studied by scanning photoelectron (2002) (0)
- Beam Line and Associated Work: Operational Phase 1985-1987 (1988) (0)
- Canonically Blazed Transmission Gratings: Analysis and Modelling Results (2008) (0)
- Zone Plate Designs For The Soft X-Ray Range (1984) (0)
- CORE-LEVEL PHOTOEMISSION AND X-RAY ABSORPTION STUDY OF NA-COVERED AND OXYGEN-DEFICIENT BA0.6K0.4BIO3-Y SINGLE CRYSTALS (1998) (0)
- Free electron lasers applied to VUV and soft X-ray physics of semiconductors (1985) (0)
- Beam Line and Associated Work. (1986) (0)
- Epitaxial Growth and Dopant Incorporation in Diamond: Surface/Interface Studies based on Synchrotron Radiation (1992) (0)
- Photoemission EXAFS on outer core levels (1984) (0)
- Band bending at low‐temperature metal/III–V semiconductor interfaces: The overshoot phenomenon (1991) (0)
- Research and development of HgZnTe as an infrared material. Final Technical report, 2 August 1988-2 February 1989 (1989) (0)
- SSRL Beam Line Wunder (1983) (0)
- Photoemission Study of Single Crystal C 60 (1992) (0)
- Electronic structure of single crystal C 6 o (2002) (0)
- Transition from Schottky Limit to Bardeen Limit in the Schottky Barrier Formation of al on n- and p-GaAs(110) Interfaces (1986) (0)
- Studies of Surfaces and Interfaces on III-V Compounds Using UV and Soft X-ray Excitation (1981) (0)
- Very Strong Lattice Coupling in Diamond at Photon Energies up to 1.5 eV above the Bandgap (1985) (0)
- An Extended Maximization Technique for Measuring Optical Constants Using Transmission Gratings in the Soft X‐ray Range (2008) (0)
- Phase-Space Performances Of Optimized And Conventional Synchrotron Radiation Grazing Incidence Mirrors (1982) (0)
- Many‐Electron Effects in Photoelectron Core Spectra (2008) (0)
- Surface core level shifts on InP(110): Use of Sb overlayers (1989) (0)
- Quantative photoelectron spectromicroscopy for investigation of PMMA resist residues (2002) (0)
- William Edward Spicer (2005) (0)
- X-Ray Lithography On Beam Line III-IV (3°) At SSRL (1983) (0)
- International Conference on Insertion Devices for Synchrotron Sources Held in Stanford, California on 27-30 October 1985, (1985) (0)
- Erratum: Surface segregation and surface electronic structure of PtCu alloys: Dependence on atomic coordination [J. Vac. Sci. Technol. 18, 533 (1981)] (1982) (0)
- Electronic Structure of Hard Superconductors. (1974) (0)
- Surface sensitive photoemission EXAFS: A new structural tool (1984) (0)
- IVA-5 mechanisms of Schottky barrier formation and the production of large (>1.1 eV) barriers with Au on n-type GaAs (1981) (0)
- ELECTRON SPECTROSCOPY STUDY OF THE HEAVY FERMION COMPOUND U 2 Zn 17 (1987) (0)
- Study of the Electronic Surface State of III-V Compounds (1976) (0)
- Clustering of Metals on Semiconductors Surfaces: Relation to Metallicity, Surface Diffusion, Growth Modes and Schottky Barriers (1992) (0)
- Studies of Interfacial Chemistry between Metals and Their Effect on Electronic Systems (1986) (0)
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