John George Simmons

John George Simmons's AcademicInfluence.com Rankings

John George Simmons

Physics

#2023

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#3046

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Physics

John George Simmons's Degrees

PhD Physics University of California, Berkeley
Masters Physics Stanford University

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John George Simmons's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film (1963) (3473)
Electric Tunnel Effect between Dissimilar Electrodes Separated by a Thin Insulating Film (1963) (812)
Poole-Frenkel Effect and Schottky Effect in Metal-Insulator-Metal Systems (1967) (661)
New conduction and reversible memory phenomena in thin insulating films (1967) (493)
Conduction in thin dielectric films (1971) (448)
Nonequilibrium Steady-State Statistics and Associated Effects for Insulators and Semiconductors Containing an Arbitrary Distribution of Traps (1971) (380)
Theory of Isothermal Currents and the Direct Determination of Trap Parameters in Semiconductors and Insulators Containing Arbitrary Trap Distributions (1973) (364)
Generalized Thermal J‐V Characteristic for the Electric Tunnel Effect (1964) (247)
Potential Barriers and Emission‐Limited Current Flow Between Closely Spaced Parallel Metal Electrodes (1964) (224)
Richardson-Schottky Effect in Solids (1965) (222)
Low‐Voltage Current‐Voltage Relationship of Tunnel Junctions (1963) (214)
High-Field Isothermal Currents and Thermally Stimulated Currents in Insulators Having Discrete Trapping Levels (1972) (203)
Alternating Current Electrical Properties of Highly Doped Insulating Films (1970) (152)
Electrical Properties of Evaporated Molybdenum Oxide Films (1970) (136)
Thermally Stimulated Currents in Semiconductors and Insulators Having Arbitrary Trap Distributions (1973) (134)
A new double‐heterostructure optoelectronic switching device using molecular‐beam epitaxy (1986) (127)
Transition from Electrode-Limited to Bulk-Limited Conduction Processes in Metal-Insulator-Metal Systems (1968) (111)
Basic equations for statistics, recombination processes, and photoconductivity in amorphous insulators and semiconductors (1972) (100)
Space‐Charge Effects on Emission‐Limited Current Flow in Insulators (1967) (94)
Multicolor voltage-tunable quantum-well infrared photodetector (1993) (88)
Forming process in evaporated SiO thin films (1967) (87)
Theory of photoconductivity in amorphous semiconductors containing relatively narrow trap bands (1974) (86)
Intrinsic Fields in Thin Insulating Films between Dissimilar Electrodes (1963) (84)
Theory of transient emission current in MOS devices and the direct determination interface trap parameters (1974) (82)
The bipolar inversion channel field-effect transistor (BICFET)—A new field-effect solid-state device: Theory and structures (1985) (74)
Theory of switching in p-n-insulator (tunnel)-metal devices: Part I: Punchthrough mode (1979) (65)
Theory of dynamic charge current and capacitance characteristics in MIS systems containing distributed surface traps (1973) (65)
Theory of switching phenomena in metal/semi-insulator/n-p+ silicon devices (1977) (56)
Theory of metallic contacts on high resistivity solids (II) deep traps (1971) (55)
Theory of non-steady-state interfacial thermal currents in MOS devices, and the direct determination of interfacial trap parameters (1974) (54)
Series resistance and its effect on the maximum output power of 1.5 μm strained-layer multiple-quantum-well ridge waveguide InGaAsP lasers (2000) (53)
Optically induced switching in a p-channel double heterostructure optoelectronic switch (1986) (51)
Potential Barrier Shape Determination in Tunnel Junctions (1963) (50)
Theory of metallic contacts on high resistivity solids—I. Shallow traps (1971) (49)
Dielectric Relaxation and Its Effect on the Isothermal Electrical Characteristics of Defect Insulators (1972) (49)
Theory of dynamic charge and capacitance characteristics in MIS systems containing discrete surface traps (1973) (48)
New thin-film resistive memory (1967) (44)
Stimulated-Dielectric-Relaxation Currents in Thin Film Al-CeF3-Al Samples (1972) (44)
Ledistor—a three‐terminal double heterostructure optoelectronic switch (1987) (44)
Dielectric Relaxation and Its Effect on the Thermal Electric Characteristics of Insulators (1972) (44)
Coherent Scattering of Hot Electrons in Gold Films (1966) (43)
Determination of the energy distribution of interface traps in MIS systems using non-steady-state techniques (1974) (42)
Concepts of gain at an oxide-semiconductor interface and their application to the TETRAN ― a tunnel emitter transistor ― and to the MIS switching device (1986) (41)
Theory of electron conduction in the double-heterostructure optoelectronic switch (DOES) (1987) (40)
Identification of volatile products in low pressure hydrocarbon electron cyclotron resonance reactive ion etching of InP and GaAs (1993) (40)
ac electrical properties and I‐V characteristics of MoO3 film under dc bias (1972) (36)
Experimental studies of switching in metal semi-insulating n-p+ silicon devices (1977) (36)
Determination of active-region leakage currents in ridge-waveguide strained-layer quantum-well lasers by varying the ridge width (1998) (36)
DC conduction in thin films (1971) (35)
A hot electron, cold cathode, emitter (1967) (35)
Theory and analyses of the ac characteristics of defect thin‐film insulators (1976) (33)
Isothermal-Dielectric-Relaxation Currents in Thin-Film Al-CeF3-Al Samples (1973) (31)
Noise and photoconductive gain in AlGaAs/GaAs quantum well intersubband infrared photodetectors (1994) (29)
Range of validity of the WKB tunnel probability, and comparison of experimental data and theory (1969) (29)
Incorporation of electric-field penetration of the electrodes in the theory of electron tunnelling through a dielectric layer (1967) (29)
Determination of the defect nature of MoO3 films using dielectric‐relaxation currents (1972) (28)
Generalized theory of conduction in schottky barriers (1983) (27)
Theory of switching in p-n-insulator (tunnel)-metal devices—II: Avalanche mode (1980) (26)
InP/InGaAsP double-heterostructure optoelectronic switch (1993) (25)
Theory of steady state photoconductivity in amorphous semiconductors (1972) (25)
Low temperature radio frequency sputter deposition of TiN thin films using optical emission spectroscopy as process monitor (1994) (25)
Thermal Bulk Emission and Generation Statistics and Associated Phenomena in Metal-Insulator-Semiconductor Devices under Non-Steady-State Conditions (1973) (24)
Growth and characterization of silicon nitride films produced by remote microwave plasma chemical vapor deposition (1991) (24)
On-die diffractive alignment structures for packaging of microlens arrays with 2-D optoelectronic device arrays (1996) (24)
Experimental realization of an n-channel double heterostructure optoelectronic switch (1986) (24)
Photoconductivity and the determination of trapping parameters in amorphous semiconductors (1974) (23)
Si/SiGe digital optoelectronic switch (1991) (23)
Figure of merit for integrated bipolar transistors (1986) (23)
4 x 4 vertical-cavity surface-emitting laser (VCSEL) and metal-semiconductor-metal (MSM) optical backplane demonstrator system. (1996) (23)
Non-steady-state bulk-generation processes in pulsed metal-insulator-semiconductor capacitors☆ (1976) (23)
OBSERVATIONS ON COHERENT ELECTRON SCATTERING IN THIN‐FILM, COLD CATHODES (1967) (23)
Optoelectronic dynamic random access memory cell utilizing a three‐terminal N‐channel self‐aligned double‐heterostructure optoelectronic switch (1989) (22)
An investigation into the temperature sensitivity of strained and unstrained multiple quantum-well, long wavelength lasers: new insight and methods of characterization (1995) (22)
Heterojunction field-effect transistor (HFET) (1986) (21)
Alternating Current Electrical Properties of Evaporated Molybdenum Oxide Films (1969) (21)
Dielectric-Relaxation Currents in Insulators (1972) (21)
Non-equilibrium response of MOS devices to a linear voltage ramp—I. Bulk discrete traps (1977) (20)
Low dark current dual band infrared photodetector using thin AlAs barriers and Γ‐X mixed intersubband transition in GaAs quantum wells (1994) (20)
Effect of temperature and voltage sweep rate on C ƒ- V characteristics of MIS capacitors (1974) (20)
Surface-generation statistics and associated thermal currents in metal-oxide-semiconductor structures (1975) (20)
The determination of the energy distribution of interface traps in metal-nitride-oxide-silicon (memory) devices using non-steady-state techniques (1976) (20)
Potential barrier attenuation due to electric field penetration of the electrodes (1965) (19)
Band gap modification in Ne+-ion implanted In1−xGaxAs/InP and InAsyP1−y/InP quantum well structures (1997) (19)
A thin film, cold cathode, alpha-numeric display panel (1968) (19)
Effect of Deep Traps on the Barrier Heights of Metal-Insulator-Metal Tunnel Junctions (1969) (19)
Optoelectronic transient response of the self‐aligned double‐heterostructure optoelectronic switch (1988) (19)
A Description of MOS Internodal Capacitances for Transient Simulations (1982) (19)
Strain-induced performance improvements in long-wavelength, multiple-quantum-well, ridge-waveguide lasers with all quaternary active regions (1992) (19)
Effects of bulk trapping on the memory characteristics of thick-oxide MNOS variable-threshold capacitors (1974) (19)
Characteristics of three-terminal metal-tunnel if oxide-n/p+ devices (1979) (18)
TEMPERATURE CHARACTERISTICS OF BeO TUNNELING STRUCTURES (1963) (18)
Switching phenomena in metal-insulator-n/p+ structures: theory, experiment and applications (1978) (18)
Optoelectronic transient response of an n‐channel double heterostructure optoelectronic switch (1988) (17)
Trapping, emission and generation in MNOS memory devices (1974) (17)
Demonstration of a p-channel GaAs/AlGaAs BICFET (1988) (17)
Experimental study of implantation‐induced disordering in InGaAsP strained multiple‐quantum‐well heterostructures (1994) (16)
Very high-transconductance heterojunction field-effect transistor (HFET) (1987) (16)
An analytical treatment of the performance of submicrometer FET logic (1985) (16)
High‐speed integrated heterojunction field‐effect transistor photodetector: A gated photodetector (1987) (16)
Long wavelength infrared photocurrent study of Si‐SiGe heterostructures (1992) (16)
Room temperature electron cyclotron resonance chemical vapor deposition of high quality TiN (1995) (15)
InGaAs/InP quantum wires grown by gas source molecular beam epitaxy onto V‐grooved InP substrates with (111)A facet sidewalls (1995) (15)
Characteristics of metal/tunnel-oxide/N/P+ silicon switching devices—I: Effects of device geometry and fabrication processes (1981) (15)
Band-gap blue shift by impurity-free vacancy diffusion in 1.5-μm-strained InGaAsP/InP multiple quantum-well laser structure (1997) (15)
Nonsteady‐state techniques for determining the energy distribution of interface traps in MNOS (memory) devices (1975) (15)
Maximum operating power of 1.3 μm strained layer multiple quantum well InGaAsP lasers (1999) (14)
Fabrication of high sensitivity thin-film indium antimonide magnetoresistors (1975) (14)
High-power and high-temperature operation of InGaAsP/InP multiple quantum well lasers (1999) (14)
Well number, length, and temperature dependence of efficiency and loss in InGaAsP-InP compressively strained MQW ridge waveguide lasers at 1.3 /spl mu/m (1997) (14)
Novel infrared detector concept utilizing controlled epitaxial doping profiles (1992) (14)
Wet Chemical Etching for V‐grooves into InP Substrates (1998) (14)
Image Force in Metal-Oxide-Metal Tunnel Junctions (1969) (14)
Small-signal model and high-frequency performance of the BICFET (1985) (13)
Determination of energy density distribution and capture cross-section of interface states in the metal-nitride-oxide-semiconductor (MNOS) structure (1982) (13)
Very low dark current InGaP/GaAs MSM-photodetector using semi-transparent and opaque contacts (1996) (13)
Three-terminal Si/SiGe digital optoelectronic switch (1992) (13)
Sulfur Passivation of InP/InGaAs Metal‐Semiconductor‐Metal Photodetectors (1999) (13)
Transient isothermal generation at the silicon-silicon oxide interface and the direct determination of interface trap distribution☆ (1976) (13)
Electrical properties of thin‐film Al‐CeF3‐Al capacitors (1975) (12)
An n-channel BICFET in the GaAs/AlGaAs material system (1989) (12)
Characteristics of metal/tunnel-oxide/n/p+ silicon switching devices—II: Two-dimensional effects in oxide-isolated structures (1982) (12)
High performance InPInGaAs-BASED MSM photodetector operating at 1.3-1.5 μm (1996) (12)
Optical and electrical oscillations in double-heterojunction negative differential resistance devices (1993) (12)
Capacitance-voltage and current-voltage characteristics of tunnel MOS structures (1976) (12)
Ion implantation induced compositional intermixing in the InGaAs/InP MQW system for wavelength shifted waveguides (1995) (12)
A review of the techniques used to determine trap parameters in the MNOS structure (1977) (11)
Intermixing of InGaAsP/InGaAsP quantum-well structures using dielectric films (2001) (11)
The Scientific 100: A Ranking of the Most Influential Scientists, Past and Present (2000) (11)
Experimental investigations of the effect of the mode-hopping on the noise properties of InGaAsP Fabry-Perot multiple-quantum-well laser diodes (2003) (11)
The contribution of lateral current spreading to the temperature sensitivity of strained-layer, multiple-quantum-well, long wavelength, ridge waveguide lasers (1995) (11)
A p-channel BICFET in the InGaAs/InAlAs material system (1988) (11)
Applications of amorphous semiconductors in electronic devices (1970) (10)
The theory of photoconductivity in defect insulators containing discrete trap levels (1975) (10)
Ridge waveguide quantum-well wavelength division demultiplexing detector with four channels (1992) (10)
Non-steady-state phenomena in defect thin-film metal-insulator-metal systems containing Schottky barriers (1975) (10)
THEORY OF ISOTHERMAL CURRENT AND THE DIRECT DETERMINATION OF TRAP PARAMETERS IN SEMICONDUCTORS AND INSULATIONS CONTAINING ARBITRARY (1973) (10)
The effect of varying barrier height on the operational characteristics of 1.3-/spl mu/m strained-layer MQW lasers (1998) (10)
Molecular beam epitaxial growth of quantum wires on V-grooved InP substrates with (1 1 1) sidewalls (1997) (9)
Low‐temperature electron cyclotron resonance chemical vapor deposition of very low resistivity TiN for InP metallization using metalorganic precursors (1995) (9)
Electrical switching speed of the double-heterostructure optoelectronic switch (1987) (9)
Theory of photoconductivity in amorphous semiconductors containing slowly-varying trap distributions (1973) (8)
Superlinearity and sensitization in defect photoconductors (1976) (8)
Integrated Thin-Film Circuits (1961) (8)
The dependence of the maximum operating temperature of long wavelength semiconductor lasers on physical and material device parameters (1995) (8)
Optical and Electrical Characteristics of InGaAsP MQW BH DFB Laser Diodes (2002) (8)
Non‐steady‐state studies on MOS devices subject to a linear voltage ramp (1979) (8)
Note on the barrier heights in Al-Al2O3-Al tunnel junctions (1965) (8)
Determination of bulk trap parameters using thermal dielectric relaxation techniques (1974) (8)
A relationship for temperature dependence of threshold current for 1.3-μm compressively strained-layer multiple-quantum-well lasers (1997) (7)
Growth and characterization of GaAsSb metamorphic samples on an InP substrate (2006) (7)
Temperature sensitivity of strained multiple quantum well long-wavelength semiconductor lasers: root cause analysis and the effects of varying device structure (1997) (7)
Strained layer (1.5 /spl mu/m) InP/InGaAsP lasing opto-electronic switch (LOES) (1994) (7)
Maximum operating temperature of the 1.3 μm strained layer multiple quantum well InGaAsP lasers (1998) (7)
New methods of defect-enhanced quantum well intermixing and demonstrated integrated distributed-feedback laser modulator (2000) (7)
On Tantraporn's determination of the electron effective mass in Al2O3 (1965) (7)
The Effect of the Native Oxide on Mask Undercutting of V‐Grooves Etched into (100) InP Surfaces Using an SiN x Mask (1995) (7)
Experimental and theoretical electrical characteristics of metal-SIPOS-n-p+ structures (1987) (6)
Quantitative compositional analysis of quantum well intermixing using a low temperature MBE-grown InP cap layer (2006) (6)
Interpretation of non-equilibrium measurements on MOS devices using the linear voltage ramp technique (1981) (6)
Interface state charge in thin-oxide m.i.s.t. devices (1979) (6)
Photoconductivity characteristics of defect insulators (1975) (6)
Quantitative analysis of compositional changes in InGaAs∕InGaAsP quantum wells on GaAs induced by intermixing with a low temperature grown InGaP cap layer (2006) (6)
Analytical expressions for tunnel currents in metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures in a two-band model (1980) (6)
Transient emission and generation currents in Metal-Insulator-Semiconductor capacitors☆ (1975) (6)
Comparison of quantum well intermixing in GaAs structures using a low temperature grown epitaxial layer or a SiO2 cap (2006) (5)
High resistivity in n-type InP by He+ bombardment at 300 and 60 K (1995) (5)
A new heterostructure FET (1986) (5)
Effect of gold recombination centers on the states at the oxide/silicon interface (1978) (5)
Experimental Study on the Intrinsic Response, Optical and Electrical Parameters of 1.55-$muhboxm$DFB BH Laser Diodes During Aging Tests (2005) (5)
Defect solids: Carrier densities, conductivity, and Fermi levels (1977) (5)
Implantation isolation in n-type InP bombarded with He + and B + (1995) (5)
Experimental technique for determining surface potential as a function of gate voltage of a MOS capacitor (1980) (5)
Digital optical metal insulator silicon thyristor (o.m.i.s.t.) (1978) (5)
Determination of the switching criterion for metal/tunnel-oxide/N/P+silicon switching devices (1981) (5)
Number and length on the temperature sensitivity of the threshold current in InGaAsP-InP MQW lasers (1998) (5)
Molecular-beam epitaxially grown InP/InGaAsP heterostructure for inversion-channel devices (1993) (5)
Electrical and optical properties of the four-terminal double-heterostructure opto-electronic switch (1993) (5)
Gold traps in 〈100〉 silicon-silicon dioxide interfaces (1979) (5)
Thermal behavior of tensile-strain InGaAsP-InP lasers with varying ridgewidth (1997) (5)
Frequency response of bulk traps in the metal-oxide-silicon structure under strong-inversion conditions (1977) (5)
and Optical Properties of the Three-Terminal Double-Heterostructure Optoelectronic Switch (1990) (4)
The platinum doped MOST: A memory storage element (1981) (4)
New heterostructure junction field-effect transistor (HJFET) (1986) (4)
Comparison of quantum well infrared photodetectors grown on different molecular beam epitaxial systems (1993) (4)
Quantum well intermixing of a quantum well structure grown on an InAsP metamorphic pseudosubstrate on InP (2009) (4)
Experimental response of MOS devices to a fast linear voltage ramp (1978) (4)
Regular and periodic peaks in device current, capacitance, and intersubband photocurrent from a multiple‐double‐well (1994) (4)
Equilibrium and non-equilibrium response of an m.o.s. system containing interface traps to a linear voltage ramp (1979) (4)
The silicon heterostructure switch: developments and experimental evaluation (1988) (4)
High‐resistivity regions in n‐type InGaAsP produced by ion bombardment at different temperatures (1994) (4)
Summary Abstract: Double heterostructure optoelectronic switching devices using molecular beam epitaxy (1986) (3)
Multiple Cathode Sputtering System (1961) (3)
Heterostructure complementary technology (1987) (3)
New insight into the temperature sensitivity of the threshold current of long wavelength semiconductor lasers (1994) (3)
Determination of bulk‐trap parameters in MIS structures (1974) (3)
Volatile products and endpoint detection in reactive ion etching of III-V compounds with a broad beam ECR source (1995) (3)
Realization of an n-channel GaAs/AlGaAs bistable transistor (BISFET) (1993) (3)
Demonstration of a DFB laser with an integrated electro-absorption modulator produced using a novel quantum-well intermixing technique (2001) (3)
Effect of charged-centre scattering on the mobility of photo-excited carriers in defect photoconductors (1973) (3)
The morphology of {InP}/{InGaAs} grown by molecular beam epitaxy onto V-grooved InP substrates (1997) (3)
Theory of the metal-insulator-semiconductor thyristor (1980) (3)
Effects of Electron Cyclotron Resonance Power and Cavity Dimensions in Plasma Etching of III–V Compounds (1995) (3)
Dynamic switch logic — A new concept for digital optical logic using DOES devices (1985) (3)
High-resistivity regions in n-type InGaAsP produced by 4He+ ion bombardment at 80 and 300 K (1993) (3)
Space‐charge generation properties of gold in MOS structures (1979) (3)
A new ultra-high-speed heterojunction transistor (1987) (3)
Nonequilibrium response of MOS devices to linearly varying voltages (1978) (3)
Comparison of Quantum Well Interdiffusion on Group III, Group V, and Combined Groups III and V Sublattices in GaAs-Based Structures (2008) (3)
Small-signal response of bulk traps in MNOS devices☆ (1977) (2)
Inversion-channel Si/SiGe heterojunction field-effect transistor (1992) (2)
A comparison of minimum propagation delay and unity power transfer frequency of submicron MOSFETs (1988) (2)
Bistable field effect transistor (BISFET): a novel heterostructure device (1993) (2)
Contactless Electroreflectance Study of InxGa1-xAs/InP Multiple Quantum Well Structures Including the Observation of Surface/Interface Electric Fields (1996) (2)
High-responsivity InGaAs/InP-based MSM photodetector operating at 1.3-μm wavelength (1996) (2)
High Temperature Substrate Holder (1963) (2)
Optoelectronic integration of a GaAs/AlGaAs bistable field effect transistor (BISFET) and LED (1994) (2)
Direct measurement of hot hole distribution in an SiGe unipolar transistor structure (1993) (2)
The determination of interfacial and bulk properties of gold in m.o.s. structures using quasiequilibrium and non-steady-state linear voltage-ramp techniques (1979) (2)
Demonstration of a Si/SiGe optoelectronic reset-set flip-flop based on an inversion-channel heterostructure (1993) (2)
Thermionic emission and tunneling in a strained InGaAsP 1.3 um multiple quantum well laser structure (1994) (2)
Optical and electrical low-frequency noise of ridge waveguide InGaAsP/InP MQW lasers (2001) (2)
GaAs/AlGaAs inversion channel devices for an integrated opto-electronic technology (1988) (2)
Novel high-speed integrated heterostructure transistors, photodetectors, and optoelectronic circuits (1988) (2)
Exact analytical and approximate analyses of Bragg reflectors with nonrectangular index profiles. (1992) (2)
Observation of separate electron and hole escape rates in unbiased strained InGaAsP multiple quantum well laser structures (1993) (2)
Thermal Stability of Reactively Sputtered TiN on InP as a Diffusion Barrier (1992) (2)
Characterization of InGaAs/Inp Epitaxial Layers Grown Over V-Groove Patterned Inp Substrates Using Gas Source Molecular Beam Epitaxy (1993) (2)
Carrier lifetimes in strained InGaAsP multiple-quantum-well laser structures (1992) (2)
Electrical properties of p‐type InGaAsP and InGaAs irradiated with He+ and N+ (1995) (1)
Modelling of optical pumping in split-electrode semiconductor lasers (1999) (1)
Schottky contacts to GaxIn1−xP barrier enhancement layers on InP and InGaAs (1996) (1)
Sulfur Passivation of InP/InGaAs Metal‐Semiconductor‐Metal Photodetectors. (1999) (1)
Growth of InGaAs/InP structures by gas source molecular beam epitaxy on SiO2-patterned substrates for optoelectronic applications (1997) (1)
Quasistatic and nonequilibrium phenomena in m.o.s. structures under the influence of a constant gate-current bias (1980) (1)
OntheOptical andElectrical Noise Cross-Correlation Measurements forQuality Evaluation ofLaserDiodes (2005) (1)
IIIA-2 a new double heterostructure opto-electronic switch—DOES (1985) (1)
Multicolor voltage tunable quantum well infrared photodetector (1993) (1)
Optical and electrical low-frequency noise and their correlation in InGaAsP MQW lasers (2000) (1)
Polyimide passivated semitransparent In0.49Ga0.51P/GasAs MSM photodetector operating at 840 nm wavelength (1999) (1)
Electrical characterization of rf sputtered TiN thin films on III–V semiconductors (1992) (1)
Analogue Integrated Circuits (1986) (1)
On the theory and analyses of the ac characteristics of defect thin films (1976) (1)
Efficient analysis of strongly absorbing inhomogeneous planar waveguides using exact transfer matrices for linearly, exponentially, and parabolically graded media (1994) (1)
Quantum hydrodynamic equations for nanostructures with spatially varying effective mass (1993) (1)
Direct measurement of the inter-diffusion in quantum wells enhanced by group V intermixing for InP- based structures (2006) (1)
A three-color voltage tunable quantum well intersubband photodetector for long wavelength infrared (1994) (1)
On transconductance in the p-channel Si/SiGe heteroj unction field effect transistor (1992) (1)
Demonstration of high performance heterojunction field effect transistor in InAlAs/InGaAs/InAlGaAs/InP material system (1991) (1)
Quasistatic response of an MOS system to a constant gate-current bias (1981) (1)
Steady-state and non-steady-state current flow in thin-film Al-Ce F 3 -Al samples (1975) (1)
Steady-State and Non-Steady-State Characterization of MOS Devices (1979) (1)
Modelling of self-sustained pulsations in non-uniformly pumped semiconductor lasers (1998) (1)
Conduction in amorphous thin films of silicon nitride under non-uniform electric fields (2017) (1)
Non-Steady-State Measurements on Variable-Threshold MNOS Transistors (1972) (1)
Theory of switching in p-n-insulator (tunnel)-metal devices: thick-tunnel oxides and indirect tunnel effects (1980) (1)
Multiple‐Heater Turret for Vapor Deposition (1962) (1)
High Resistivity in N-Type InP and InGaAsP by He + Ion Induced Amorphization. (1993) (1)
OPTICAL AND ELECTRICAL NOISE OF RIDGE WAVEGUIDE InGaAsP/InP F-P AND DFB MQW LASERS (2001) (0)
Numerical Simulation of Auger-Induced Hot Electron Transport in InGaAsP/InP Double Heterojunction Laser Diodes: Hydrodynamics versus Drift and Diffusion (1993) (0)
High energy He+ bombardment of n-type InP (1996) (0)
Regular and periodic peaks in device current, capacitance, and intersubband photocurrent from a multiple double-well structure (1994) (0)
Insight into criteria for design optimisation of bistable field effect transistor (BISFET) (1994) (0)
Performance and advantages of BICFETs versus HBTs (1988) (0)
Use of a Small Lattice Mis-Matched Metamorphic Substrate to Extend the Wavelength Range of a Broadband, Polarization Insensitive Semiconductor Optical Amplifier (2004) (0)
Optical and electrical noise and quality of degraded strained-layer DFB laser (2002) (0)
Interfacial effects in MIS systems (1972) (0)
The Stability of Reactively Sputtered WN x Thin Films on III-V Semiconductors (1994) (0)
Reliability and intrinsic response of directly modulated MQW BH lasers (2004) (0)
An Opto-Electronic Dynamic Random Access Memory (DRAM) Cell Utilizing a Three Terminal N-Channel Self-Aligned DOES Device (1989) (0)
Spontaneous oscillations in the InP-InGaAsP lasing optoelectronic switch (LOES) (1995) (0)
A four-channel ridge wave-guide quantum well wavelength division demultiplexing detector and its optimization (1992) (0)
The bistable field effect transistor (BISFET): a novel optoelectronic switching device (1993) (0)
A Unique Capability of Quantum Well Infrared Photodetectors: Multicolor and Multiband Response (1995) (0)
Modeling and characteristics of bistable optoelectronic switches and heterojunction field effect transistors in molecular‐beam epitaxially grown SiGe/Si (1993) (0)
Electrical switching in the three terminal double heterostructure opto-electronic switching device—Active layer contact (1988) (0)
On the optical and electrical noise cross-correlation measurements for quality evaluation of laser diodes (2005) (0)
Optical and electrical low-frequency noise and their correlation measurements in InGaAsP MQW lasers (2000) (0)
Refractory Metal Contacts to N-Type InP and InGaAs (1993) (0)
15th National Vacuum Symposium of the American Vacuum Society and Symposium of the Thin Film Division, 29 October–1 November 1968, Pittsburgh (1969) (0)
Hydrocarbon Ecr Reactive Ion Etching of III-V Semiconductors with Sims Plasma Probe Diagnostics (1993) (0)
Remarks on “comments on ‘generalized theory of conduction in Schottky barriers‘” (1984) (0)
Series resistance and its effect on the maximum output power of 1.5 /spl mu/m strained-layer multiple-quantum-well ridge waveguide InGaAsP lasers (1998) (0)
Heating effect on light-current characteristics of multiple quantum well lasers (1998) (0)
Optical bistability in the GaAs/AlGaAs bistable field effect transistor (1992) (0)
Optical and electrical low-frequency noise and their correlation in InGaAsP MQW lasers (2000) (0)
IMPLEMENTATION OF A HYDRODYNAMIC TRANSIENT MODEL FOR SIMULATING HIGH SPEED PHOTODETECTORS (1992) (0)
Numerical drift‐diffusion simulation of Auger hot electron transport in Ingaasp/Inp double heterojunction laser diodes (1994) (0)
Hole trapping in a virtual type-II heterojunction for improved characteristic temperature of InGaAsP lasers (1994) (0)
Evolution of composition modulations in InGaAs/InGaAsP quantum well structures due to quantum well intermixing (2005) (0)
The effects of blocking the lateral current flow in multiple-quantum-well ridge waveguide lasers (1996) (0)
Photoconductive techniques (1977) (0)
A three-terminal N-channel InGaAsP–InP-based double heterostructure optoelectronic switch (DOES) (1996) (0)
Conduction processes in dielectric films (1965) (0)
The Non-Equilibrium Linear Voltage Ramp Technique as a Diagnostic Tool for the MOS Structure (1981) (0)
Composition variation of InGaAsP grown on (111)B faceted V-groove InP substrates by gas source molecular beam epitaxy (1996) (0)

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What Schools Are Affiliated With John George Simmons?

John George Simmons is affiliated with the following schools:

McMaster University