John Murray Gibson

John Murray Gibson's AcademicInfluence.com Rankings

John Murray Gibson

Chemistry

#3330

World Rank

#4342

Historical Rank

Nanotechnology

#105

World Rank

#105

Historical Rank

Physical Chemistry

#442

World Rank

#492

Historical Rank

chemistry Degrees

John Murray Gibson

Engineering

#4928

World Rank

#6154

Historical Rank

Materials Science

#254

World Rank

#257

Historical Rank

Applied Physics

#1316

World Rank

#1345

Historical Rank

engineering Degrees

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Chemistry
Engineering

John Murray Gibson's Degrees

PhD Materials Science Stanford University
Bachelors Chemistry California Institute of Technology

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John Murray Gibson's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Exceptionally high Young's modulus observed for individual carbon nanotubes (1996) (5042)
Mesotaxy: single-crystal growth of buried CoSi2 layers (1987) (373)
Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi 2 Epitaxial Structures (1983) (259)
Bonding structure in nitrogen doped ultrananocrystalline diamond (2003) (234)
Interpretation of the Raman spectra of ultrananocrystalline diamond (2005) (225)
Morphology and electronic structure in nitrogen-doped ultrananocrystalline diamond (2002) (185)
On elastic relaxation and long wavelength microstructures in spinodally decomposed InxGa1-x.AsyP1-y epitaxial layers (1985) (179)
Variable Coherence Microscopy: a Rich Source of Structural Information from Disordered Materials (1996) (177)
Fluctuation microscopy: a probe of medium range order (2005) (167)
Growth of single‐crystal CoSi2 on Si(111) (1982) (166)
Diminished Medium-Range Order Observed in Annealed Amorphous Germanium (1997) (145)
Transistor action in Si/CoSi2/Si heterostructures (1985) (144)
Paracrystallites found in evaporated amorphous tetrahedral semiconductors (1998) (142)
High quality Si‐on‐SiO2 films by large dose oxygen implantation and lamp annealing (1986) (141)
Self-limiting oxidation of copper (1998) (136)
Stability of semiconductor strained‐layer superlattices (1986) (133)
Study of thermally oxidized yttrium films on silicon (1987) (130)
Growth of single crystal epitaxial silicides on silicon by the use of template layers (1983) (125)
New approach to projection-electron lithography with demonstrated 0.1 μm linewidth (1990) (120)
The effects of elastic relaxation on transmission electron microscopy studies of thinned composition-modulated materials (1986) (113)
Layered structures, epitaxy, and interfaces (1985) (112)
Control of a natural permeable CoSi2 base transistor (1986) (103)
Direct determination of atomic structure at the epitaxial cobalt disilicide on (111) Si interface by ultrahigh resolution electron microscopy (1982) (102)
Coherence and multiple scattering in “Z-contrast” images (1993) (99)
Burrowing of Co Nanoparticles on Clean Cu and Ag Surfaces (1999) (96)
Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy (1997) (94)
Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy (1998) (89)
Absence of an abrupt phase change from polycrystalline to amorphous in silicon with deposition temperature. (2001) (86)
Structure and physical properties of paracrystalline atomistic models of amorphous silicon (2001) (85)
Microstructure in the incommensurate and the commensurate charge-density-wave states of 2 H -Ta Se 2 : A direct observation by electron microscopy (1982) (85)
``Contact epitaxy'' observed in supported nanoparticles (1998) (80)
Design of an ultrahigh‐vacuum specimen environment for high‐resolution transmission electron microscopy (1989) (77)
Oxygen surface diffusion in three-dimensional Cu2O growth on Cu(001) thin films (1997) (74)
Liquid phase growth of epitaxial Ni and Co silicides (1983) (73)
In situ study of the molecular beam epitaxy of CoSi2 on (111) Si by transmission electron microscopy and diffraction (1987) (72)
Elastic relaxation in transmission electron microscopy of strained‐layer superlattices (1985) (70)
Measurement of thermodynamic parameters of graphite by pulsed-laser melting and ion channeling (1984) (68)
Substantial crystalline topology in amorphous silicon. (2010) (68)
STEM-based mass spectroscopy of supported Re clusters (1997) (67)
Direct Evidence for 1 nm Pores in “Dry”Thermal SiO2 from High Resolution Transmission Electron Microscopy (1980) (64)
Structural disorder induced in hydrogenated amorphous silicon by light soaking (1998) (64)
Observation of interfacial atomic steps during silicon oxidation (1989) (60)
The Homogeneous Nucleation Mechanism of Cu2O on Cu(001) (1998) (59)
The effect of elastic relaxation on the local structure of lattice-modulated thin films (1984) (59)
The Effects of Nucleation and Growth on Epitaxy in the CoSi2/Si System (1982) (58)
Projection electron-beam lithography: A new approach (1991) (57)
Reading and Writing with Electron Beams (1997) (55)
Layered structures and epitaxy (1986) (54)
Diffusion and precipitation in amorphous Si (1985) (53)
Study of single-electron excitations by electron microscopy I. Image contrast from delocalized excitations (1978) (52)
Direct Observation of Charge-Density-Wave Discommensurations and Dislocations in 2 H -Ta Se 2 (1981) (52)
Dynamic observations of interface motion during the oxidation of silicon (1994) (51)
In-situ observations of classical grain growth mechanisms during sintering of copper nanoparticles on (001) copper (1997) (51)
Hydrogen surface coverage: Raising the silicon epitaxial growth temperature (1989) (49)
Single crystal silicide silicon interfaces: Structures and barrier heights (1985) (45)
Plan‐view transmission electron diffraction measurement of roughness at buried Si/SiO2 interfaces (1989) (43)
In-situ transmission electron microscopy of NiSi2 formation by molecular beam epitaxy (1989) (42)
Fluctuation microscopy studies of medium-range ordering in amorphous diamond-like carbon films (2004) (41)
Stochastic scattering in charged particle projection systems: A nearest neighbor approach (1995) (39)
Direct measurement of strain in a Ge island on Si(001) (1999) (38)
Comparison of conductivity produced in polymers and carbon films by pyrolysis and high energy ion irradiation (1984) (36)
In situ transmission electron microscopy of AlN growth by nitridation of (0001) α-Al2O3 (1998) (36)
Growth of strained-layer semiconductor-metal-semiconductor heterostructures (1986) (36)
Interfaces in Crystalline Materials and Surfaces and Interfaces of Solid Materials (1996) (35)
Expitaxial metal–semiconductor structures and their properties (1986) (35)
Increasing medium-range order in amorphous silicon with low-energy ion bombardment (2003) (35)
Dome-to-pyramid shape transition in Ge/Si islands due to strain relaxation by interdiffusion (2000) (35)
Sintering of silver and copper nanoparticles on (001) copper observed by in-situ ultrahigh vacuum transmission electron microscopy (1998) (35)
GaAs avalanche photodiodes and the effect of rapid thermal annealing on crystalline quality of GaAs grown on Si by molecular‐beam epitaxy (1987) (34)
High Resolution Transmission Electron Microscopy (1991) (34)
Trace oxygen effects on copper nanoparticle size and morphology (1996) (34)
Structure imaging of commensurate GexSi1−x/Si(100) interfaces and superlattices (1985) (33)
A quantitative measure of medium-range order in amorphous materials from transmission electron micrographs (2003) (32)
Analysis of epitaxial fluoride‐semiconductor interfaces (1983) (32)
Increased medium-range order in amorphous silicon with increased substrate temperature (2000) (32)
Schläfli cluster topological analysis of medium range order in paracrystalline amorphous semiconductor models (2000) (30)
Observation of two-dimensional ordering in ion-damaged graphite during post-implantation annealing (1984) (30)
Epitaxial growth of alkaline earth fluorides on semiconductors (1983) (28)
Connecting small-angle diffraction with real-space images by quantitative transmission electron microscopy of amorphous thin-films (1998) (28)
Characterization of GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition (1987) (28)
Mask fabrication for projection electron-beam lithography incorporating the SCALPEL technique (1991) (26)
Implantation temperature dependence of electrical activation, solubility, and diffusion of implanted Te, Cd, and Sn in GaAs (1989) (26)
Synthesis of Buried Silicon Compounds Using Ion Implantation (1987) (25)
Dramatic effect of postoxidation annealing on (100) Si/SiO2 roughness (1997) (25)
Fluctuation X‐ray microscopy: a novel approach for the structural study of disordered materials (2007) (24)
‘‘Coreless defects’’ and the continuity of epitaxial NiSi2/Si(100) thin films (1988) (24)
Observations of structural order in ion-implanted amorphous silicon. (2001) (23)
Evolution of coherent islands during strained-layer Volmer-Weber growth of Si on Ge(111) (2000) (23)
Breakdown of the weak-phase object approximation in amorphous objects and measurement of high-resolution electron optical parameters (1994) (23)
High-angle annular dark-field imaging of self-assembled Ge islands on Si(0 0 1). (2001) (23)
Post‐Growth Annealing Treatments of Epitaxial CaF2 on Si(100) (1986) (22)
Uniqueness of Surface Images (1984) (22)
Initial Stages of Epitaxial Growth (1987) (20)
Nucleation of single-crystal CoSi2 with oxide-mediated epitaxy (1999) (20)
Channeling effects from impurity atoms in the high-angle annular detector of the stem (1988) (20)
In situ ultra-high vacuum transmission electron microscopy studies of nanocrystalline copper (1995) (20)
High resolution electron microscopy of interfaces between epitaxial thin films and semiconductors (1984) (20)
Atomic scale structure of interfaces (1990) (19)
Impurity-suppressed sintering in copper nanophase materials (1998) (19)
Thermally poled silica samples are structurally heterogeneous: Electron diffraction evidence of partial crystallization (2001) (18)
Transmission electron microscopy of semiconductor quantum dots (2000) (18)
Burrowing of nanoparticles on clean metal substrates: Surface smoothing on a nanoscale (2001) (18)
Improving Signal-to-Noise Limits in High Resolution Transmission Electron Microscopy (1986) (18)
Evidence for a stable Si(111)7 × 7: O reconstruction from quantitative transmission electron diffraction (1990) (17)
Imaging of defects and recrystallization studies in ion implanted graphite (1985) (17)
Rutherford backscattering/channeling and transmission electron microscopy analysis of epitaxial BaF2 films on Ge and InP (1983) (17)
Structural Studies of Metal-Semiconductor Interfaces with High-Resolution Electron Microscopy (1982) (17)
Solving Amorphous Structures—Two Pairs Beat One (2012) (16)
The oblate morphology of supported PtRu5 on carbon black (2003) (16)
Quantitative analysis of annealing-induced structure disordering in ion-implanted amorphous silicon (2002) (15)
Trapping of oxygen at homoepitaxial Si‐Si interfaces (1986) (15)
Electron-optical design for the SCALPEL proof-of-concept tool (1995) (15)
An analytical model of stochastic interaction effects in projection systems using a nearest‐neighbor approach (1994) (15)
Ultrahigh-Resolution Electron Microscopy of Charge-Density Waves in2H-TaSe2below 100 K (1983) (15)
Surface roughness of nitrided (0001) Al2O3 and AlN epilayers grown on (0001) Al2O3 by reactive molecular beam epitaxy (1997) (15)
Reduced Subboundary Misalignment in SOI Films Scanned at Low Velocities (1985) (14)
Imaging subsurface strain at atomic steps on Si(111) (1993) (14)
The Formation of Thin Layers and Double Heterostructures of Epitaxial Silicides (1986) (14)
Structural and electrical properties of lattice‐matched Ca0.44Sr0.56F2/GaAs structures grown by molecular beam epitaxy (1986) (14)
High-resolution electron microscopy of interfaces and surfaces (1987) (14)
Activation characteristics and defect structure in Si‐implanted GaAs‐on‐Si (1987) (14)
Kinematic analysis of transmission electron diffraction data from Si(111)-7 × 7 (1994) (14)
The Limited Role of Surface Defects as Nucleation Sites for Cu2 O on Cu(001) (1999) (13)
Anomalous Desorption of Copper Oxide Observed by In Situ Transmission Electron Microscopy (1997) (13)
The Role of Hydrogen in Silicon Microcrystallization (1989) (13)
Method for detecting subtle spatial structures by fluctuation microscopy (1999) (13)
A new surface science in situ transmission and reflection electron microscope (1998) (13)
Examination of a Polycrystalline Thin-Film Model to Explore the Relation between Probe Size and Structural Correlation Length in Fluctuation Electron Microscopy (2012) (13)
Diffraction microscopy for disordered tetrahedral networks. (2004) (12)
Crystallography and Interfaces of Epitaxial Fluorite Metals and Insulators on Semiconductors (1983) (12)
The Growth and Characterization of Epitaxial Fluoride Films on Semiconductors (1983) (12)
Mesotaxy: Formation of Buried Single-Crystal CoSi 2 Layers by Implantation (1986) (12)
Fluctuation microscopy – a tool for examining medium-range order in noncrystalline systems (2005) (11)
Viewing the Seeds of Crystallization (2009) (11)
Epitaxial growth of BaF2 on semiconductor substrates (1983) (11)
Understanding the limits of pair-distribution functions for nanoscale correlation function measurement (2007) (10)
Novel interactions of supported clusters: contact epitaxy (1999) (10)
Experimental methods and data analysis for fluctuation microscopy (1999) (10)
Nanostructures and Microstructure Correlation With Physical Properties of Semiconductors: 20-21 March 1990, San Diego, California (1990) (10)
The Electronic Properties of Epitaxial Calcium Fluoride-Silicon Structures (1985) (10)
Probing medium-range structural correlations by fluctuation microscopy (2007) (10)
Evidence for partial solid-state regrowth during pulsed-laser annealing (1980) (9)
In-Situ Observation Of Aln Formation During Nitridation Of Sapphire By Ultrahigh Vacuum Transmission Electron Microscopy (1997) (9)
Summary Abstract: Epitaxial growth of BaF2 on Ge and InP (1983) (9)
Optimal thickness for Si interlayer as diffusion barrier at the Si 3 N 4 /GaAs interface: A transmission electron microscopy study (1995) (9)
Comparative fluctuation microscopy study of medium-range order in hydrogenated amorphous silicon deposited by various methods (2000) (8)
Growth of Single Crystal type A and type B Co x Ni 1-x Si 2 Layers on Si(111) (1987) (8)
Fluctuation microscopy analysis of amorphous silicon models. (2017) (7)
The Role of Lattice Mismatch in Growth of Epitaxial Cubic Silicides on Silicon (1984) (7)
Visualization of Dynamic Near-Surface Processes (1994) (7)
Erratum to “coherence and multiple scattering in ‘Z-contrast’ images” [ultramicroscopy 52 (1993) 31–53] (1994) (7)
Reconstruction of hetero-interfaces in MBE : CoSi2(001) on Si(001) (1990) (7)
Roughness at Si/SiO2 interfaces and silicon oxidation (1999) (7)
Thermal Stress During Zone-Melting-Recrystallization of Silicon on Insulator Films: The Origin of Subboundaries and In-Plane Orientation of SOI (1985) (6)
Electrical Properties of Epitaxial Silicide-Silicon Interfaces (1985) (6)
The Growth of Epitaxial NiSi 2 Single Crystals on Silicon by the Use of Template Layers (1982) (6)
Experimental Evidence of a Gaussian Roughness at Si ( 111 ) / SiO 2 Interfaces (1998) (6)
Mössbauer effect of 73 Ge in laser-processed Si and Ge crystals (1983) (6)
Interface and precipitation effects in solid phase epitaxy of Sb implanted amorphous Si (1985) (6)
Mesotaxy: Single-Crystal Growth of Buried Silicide Layers (1987) (6)
Control of medium range order in amorphous silicon via ion and neutral bombardment (2001) (5)
Thermodynamics of Paracrystalline Silicon (2000) (5)
Enhanced crystallinity of microcrystalline silicon thin films using deuterium in reactive magnetron sputter deposition at 230 °C (1998) (5)
The Etching of Silicon by Oxygen Observed by in situ Tem (1991) (5)
Investigations of amorphous structures. (1978) (4)
High Energy Transmission Electron Diffraction From Surface Monolayers During Silicon Oxidation (1990) (4)
The Structure of Ion-Implanted Amorphous Silicon (1998) (4)
Surface morphology and optical characterization of GaN grown on α-Al2O3 (0001) by radio-frequency-assisted molecular beam epitaxy (1997) (4)
Structure of ion implanted graphite fibers (1984) (4)
Quantitative characterization of self-assembled coherent islands (2003) (4)
Laboratory setup for projection electron lithography and a Monte Carlo simulation of scattering mask transmission (1993) (4)
Stability of supported organometallic clusters probed by a mass-sensitive TEM technique (1996) (4)
The Surface Kinetics of the Initial Oxidation Stages of Copper as Investigated by In Situ Ultra-High Vacuum Transmission Electron Microscopy (2001) (4)
Electron Transport Through Epitaxial Metal/Semiconductor Heterostructures (1986) (4)
Observation of dislocation‐mediated layer‐by‐layer interface growth (1994) (4)
Effect of Postoxidation Annealing on Si / SiO2 Interface Roughness (1999) (3)
Defocus as an ineffective means of changing spot size for fluctuation microscopy (2009) (3)
Ion-implanted amorphous silicon studied by variable coherence TEM (1999) (3)
Medium-Range Order Structures of Amorphous Diamond-Like Carbon Films (2001) (3)
Silicon oxidation studied by in-situ tem (1989) (3)
Cluster 'contact epitaxy'- direct evidence for novel particle: substrate interactions (1999) (3)
Improved Soi Films By High Dose Oxygen Implantation and Lamp Annealing (1985) (3)
Simple energy spike model for paracrystalline silicon in ion implantation (2004) (3)
Sintering of sputtered copper nanoparticles on (001) copper substrates (1996) (3)
Sub-Boundary Formation and Suppression in Silicon films Recrystallized by Scanned Zone Melting (1983) (3)
In-Situ UHV Tem Investigations of the Initial Oxidation Stage of Copper Thin Films (1997) (3)
A Solid‐State Thin Film Cell for In Situ Transmission Electron Microscopy of Electrodeposited Silver on Gold (1989) (3)
Nano-electromechanical Oscillators (NEMOs) for RF Technologies (2004) (3)
A simple liquid-He-cooled specimen stage for an ultra-high resolution transmission electron microscope (1983) (2)
DIRECT MEASUREMENTS OF SURFACE STRESS USING TRANSMISSION ELECTRON MICROSCOPY (1997) (2)
Detection of interstitial impurities using a high angle annular detector in the stem (1981) (2)
Structural changes caused by H2 adsorption on the Si(111)7 × 7 surface (1990) (2)
Beam transit effects in single molecule coherent diffraction. (2008) (2)
Correlation of Electrical Properties with Structure Imaging of Semiconductor Interfaces (1986) (2)
Medium-Range Ordering in Amorphous Diamond-like Carbon Films after Thermal Annealing (2004) (2)
Changes in the Medium Range Order of α-Si:H Thin Films Observed by Variable Coherence Tem (1998) (2)
Precipitation Phenomena Associated with Ultra-High Be Doping in Ga 0.47 In 0.53 P Layers grown by MBE (1989) (2)
Structural Evolution of the Silicon/Oxide Interface During Passive and Active Oxidation (2001) (2)
Strain in Coherent Ge Quantum Islands on Si Measured by Transmission Electron Microscopy (1999) (2)
Microstructural Characterization of High Dose Oxygen Implanted Silicon (1987) (2)
ATOMIC STRUCTURE AND PROPERTIES OF EPITAXIAL THIN-FILM SEMICONDUCTOR INTERFACES (1985) (2)
Topological signatures of medium range order in amorphous semiconductor models (2000) (2)
In-Situ Transmission Electron Microscopy of the Formation of Metal-Semiconductor Contacts (1990) (2)
Fluctuation X-ray Microscopy for Measuring Medium-Range Order (2004) (2)
Transmission Electron Microscopy and Diffraction from Semiconductor Interfaces and Surfaces (1988) (2)
Direct observations of the sintering of silver nanoparticles on single crystal copper by in-situ uhv tem (1997) (2)
Silicon Surface Morphology and the Reaction of Silicon with Oxygen (1992) (2)
Patterning of dispenser cathode surfaces to a controlled porosity (1989) (2)
Alignment and registration schemes for projection electron lithography (1991) (2)
Studies of Ordering in Small Particles (1995) (2)
Diminished Medium-Range Order on Annealing Amorphous Semiconductors (1997) (1)
READING AND WRITING WITH ELECTRON BEAMS Reaching to smaller and smaller scales, modern electron beams are used for studying atomic arrangements inside solids and for imprinting tiny patterns on semiconductor chips. (1997) (1)
Sintering and oxidation using a novel ultrahigh vacuum transmission electron microscope with in situ magnetron sputtering (1998) (1)
Tools for probing `atomic' action [electron microscopes] (1985) (1)
Materials Research Society Symposia Proceedings. Volume 37. Layered Structures, Epitaxy, and Interfaces Held on November 26-30, 1984 at Boston, Massachusetts, (1985) (1)
The Use of Fresnel Contrast to Study the Initial Stages of The in situ Oxidation of Silicon (1989) (1)
Interfacial Structure and Stability in Ge x Si 1−x /Si Strained Layers. (1984) (1)
Surface Kinetics of the Initial Oxidation Stages of Cu(001) Thin Film, as Studied by In Situ Ultra-High Vacuum Transmission Electron Microscopy (1998) (1)
In Situ Uhv-Tem Oxidation And Reduction Of Metals (1999) (1)
Fluctuation Microscopy Studies of Medium-range Order Structures in Amorphous Tetrahedral Semiconductors (2000) (1)
Reactive epitaxy of Co nanoparticles on (111)Si. (2001) (1)
Metastable Phases and the Molecular Beam Epitaxy of Metal Silicides (1987) (1)
Reconfigurable Antennas Using Liquid Crystalline Elastomers (2018) (1)
Epitaxial Growth of BaF 2 on Semiconductor Substrates (1982) (1)
Optimized design for the scattering with angular limitation in projection electron-beam lithography based electron projection system (2000) (1)
Materials Research Society Symposia Proceedings. Volume 56. Layered Structures and Epitaxy held in Boston, Massachusetts on 2-4 December 1985, (1986) (1)
ELASTIC RELAXATION IN COMPOSITIONALLY-MODULATED THIN FOILS. (1985) (1)
In-Situ Transmission Electron Microscopy Studies of the Oxidation of Si (111) 7X7 (1989) (1)
Microstructures of AlN Buffer Layers for the Growth of GaN on (0001) Al2O3 (1996) (1)
Interdiffusion-assisted dislocation migration in GaAs/Ga1-xAlxAs layers on Si(001) (1991) (1)
The Effect of Different Oxidizing Atmospheres on the Initial Kinetics of Copper Oxidation as Studied In Situ UHV-TEM (1999) (1)
Transmission Electron Microscopy Of Surface And Interfacial Steps (1997) (1)
Electron Beam Induced Current Studies of Nickel Silicide/Silicon Schottky Barrier Heights (1985) (1)
Molecular Hydrogen Adsorption onto the Si(111) 7 × 7 Surface (1988) (1)
Microstructure of beam‐annealed silicon (1981) (1)
A Damage Model for Disordered Structures in Ion Irradiated Silicon (2000) (1)
An Automated and Rapid Process for Determining Number of Atoms in Supported Ultra-Small Metal Clusters (1999) (1)
Rapid and Semi-automated Method for Analysis of the Number of Atoms of Ultra-small Platinum Clusters on Carbon (2000) (1)
Liquid Phase Growth of Epitaxial Ni and Co Silicides by Pulsed Laser Irradiation (1983) (1)
Summary Abstract: Bridging the gap between solid–solid and solid–vacuum interfaces: A study of buried Si/αSi interfaces (1987) (1)
A Novel Stem-Based Mass Spectroscopic Technique: Applications to Catalytic Materials (1996) (1)
Two-Dimensional Ordering of Ion Damaged Graphite (1983) (1)
A Uhv Tem Study of the in Situ Growth of Ultra-Thin Films of CoSi2 ON Si (100). (1988) (1)
Characterization of medium-range order in self-assembled organic-inorganic hybrid by fluctuation X-ray microscopy (2006) (0)
Growth and Characterization of High Quality Epitaxial GaN on ZnO(0001) by Reactive Molecular Epitaxy (1997) (0)
Fluctuation Microscopy Studies of Amorphous Diamond-Like Carbon Films (2000) (0)
LATTICE RELAXATION IN THIN COMPOSITIONALLY-MODULATED SEMICONDUCTOR FILMS. (1985) (0)
Nano-Sized Catalytic Materials Investigated by a STEM-Based Mass Spectroscopic Technique (1997) (0)
In-Situ Studies of Silicon Oxidation (1989) (0)
Defects at interfaces and surfaces studied by transmission electron microscopy (1987) (0)
Manufacturing device comprising a lithographic process. (1990) (0)
Process for manufacturing a heterostructure comprising a heteroepitaxial material has multiple components (1983) (0)
145. Hall measurements of metallic carrier densities in ion irradiated amorphous carbon films (1984) (0)
Problem Solving with the Electron Microscope Chairs (2001) (0)
Structural studies on small areas using stem (1980) (0)
Layered structures and epitaxy : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A. (1986) (0)
Tools for probing `atomic¿ action: Device designers need sophisticated ways to examine the advanced structures they have created (1985) (0)
In-Situ Transmission Elecron Microscopy (TEM) Study of the Sintering of Sputtered Copper Nanoparticles on (001) Copper (1997) (0)
Summary of Discussion on Instrumental Requirements for the Evaluation of Advanced Semiconductor Materials by Electron Microscopy (1989) (0)
In situ TEM of silicon oxidation (1992) (0)
Reactive Cluster Epitaxy: CoSi 2 Nanoparticles on (111) Si (2000) (0)
Molecular Beam Epitaxy, Semiconductors (2003) (0)
Transmission Electron Microscopy of In-Situ Deposited Films on Silicon (1989) (0)
Microstructures of AlN buffer layers for the growth of GaN on (0001) Al{sub 2}O{sub 3} (1997) (0)
Manufacture of a device including lithography process (1993) (0)
Fluctuation microscopy: a technique for revealing atomic correlations in structurally noisy (disordered) materials (2003) (0)
Quantitative High Resolution Transmission Electron Microscopy - The Role of Space Charge in Blurring Images (1996) (0)
Nucleation and Growth of Ultrathin Epitaxial Metal Silicides on Silicon (1987) (0)
Nano-sized metal clusters investigated by a STEM-based mass spectroscopic technique (2022) (0)
In-situ transmission electron microscopy of the oxidation and etching of silicon (1992) (0)
In-Situ Transmission Electron Microscopy of Thin Film Growth (1997) (0)
In-Situ Study of the Oxide Mediated Epitaxy of CoSi 2 on Si (1999) (0)
In-Situ UHV TEM Investigations of the Initial Stages of Cu(001) Oxidation (1997) (0)
Three Dimensional Ultra-Small Pt Clusters on Carbon As Studied by A Novel Stem Technique (1998) (0)
In-Situ Studies of Growth, Defects and Reconstruction at Epitaxial Silicide/Silicon Interfaces (1990) (0)
FABRICATION OF NANOSTRUCTURE ARRAYS USING PROJECTION ELECTRON-BEAM LITHOGRAPHY (1992) (0)
LBL-34392 ' Dynamic Observations of During the Oxidation Interface Motion of . Silicon (2013) (0)
Kinetic Investigations of the Initial Oxidation Stage of Copper by In-Situ UHV-TEM (1996) (0)
Materials Research Society Symposium Proceedings. Volume 448. Control of Semiconductor Surfaces and Interfaces. December 2-5, 1996, Boston, Massachusetts. (1996) (0)
Dramatic Effect of Annealing on Si(100)-SiO(2) Roughness (1998) (0)
Medium-range order in hydrogenated amorphous silicon measured by fluctuation microscopy (2000) (0)
In-situ TEM Study of the Sintering of Metal Nanoparticles with a Bulk (001) Copper Substrate] (1997) (0)
Fluctuation Microscopy: A New Class of Microscopy Techniques for Probing Medium Range Order in Amorphous Materials (1998) (0)
Characterization of medium-range order in organic-inorganic hybrid nanomaterials by fluctuation x-ray microscopy. (2006) (0)
Post-Growth Annealing Treatments of Epitaxial CaF2on Si(l00). (1986) (0)
Initial stages of epitaxial growth : symposium held April 22-24, 1987, Anaheim, California, U.S.A. (1987) (0)
Techniques for the Study of the Initial Stages of Electrocrystallization Using TEM (1987) (0)
Epitaxial metal-semiconductor structures and their properties (1986) (0)
Trapping of Oxygen at Homoepitaxial Si-Si Interfaces Grown by Molecular Beam Epitaxy (1985) (0)
Interdiffusion-assisted dislocation migrationin GaAs/GaAlAs layers grown on (001)Si (1991) (0)
Characterization of Medium-Range Order in Noncrystalline Systems by Fluctuation X-ray Microscopy (2007) (0)
Glimpsing order within the disarray (2008) (0)
The value of water-soluble contrast radiology in the management of acute small bowel obstruction. (1993) (0)
Correction of the field curvature in SCALPEL projection systems (2000) (0)
Local Measurements of Surfaces Stress (1995) (0)
Transmission Electron Microscopy of Strained-Layer Superlattices (1984) (0)
Atomic scale structure of interfaces : symposium held November 27-29, 1989, Boston Massachusetts, U.S.A. (1990) (0)
Statistics of partially coherent dark-field images of amorphous materials (2022) (0)
Identification of shape transitions in coherent Ge/Si islands using transmission electron microscopy (1999) (0)
In-Situ Studies of the MBE Growth of CoSi 2 on Si (111) in a UHV Transmission Electron Microscope (1987) (0)
In-Situ Transmission Electron Microscopy of the Etching of Silicon (111) Surfaces by Oxygen (1991) (0)
Epitaxial CoSi2 on Si(100) by oxide-mediated epitaxy (2000) (0)
Interface structure during silicon oxidation (1990) (0)
Kinetic Investigations of the Initial Oxidation Stage of Cu (1997) (0)
A Novel Method for Study of Roughness at Buried Interfaces by Plan View Tem: Si/SiO 2 (1989) (0)
Shape Reversal of Ge/Si Domes to Pyramids Via Si-Ge Intermixing and Strain Reduction (1999) (0)
Reconstruction of (100) Silicon/Disilicide Interfaces (1989) (0)
Characterization of medium-range order in disordered materials by fluctuation x-ray microscopy (2007) (0)
Heteroepitaxy and Initial Stages of Metal Oxidation. (1998) (0)
The Raft-Like Structure of Supported PtRu 5 (1997) (0)
In-Situ Transmission Electron Microscopy Study of Roughness during Silicon Oxidation and Silicidation (1993) (0)
Structure of Amorphous Solids Studied by Phase-Contrast TEM (1996) (0)
SEMICONDUCTOR INTERFACES AND SURFACES (1988) (0)
In-Situ Transmission Elecron Microscopy (TEM) Study of the Nitridation of Basal Plane Sapphire by Reactive Molecular Beam Epitaxy (RMBE) (1997) (0)
In-situ TEM study of the sintering of copper nanoparticles on (001) copper (2022) (0)
Growth of AIN on (0001) α-Al2O3 using a novel ultrahigh vacuum transmission electron microscope with in-situ MBE (2022) (0)
Surface smoothing upon deposition of nanoparticles on single crystalline substrates (1999) (0)
A method of manufacturing a heterostructure (1983) (0)
The effect of processing conditions on the structure of buried interfaces between silicon and silicon dioxide (1996) (0)
Preparation of Ultrafine Supported Clusters for Electron Microscopy Studies (1995) (0)
In-situ transmission electron microscopy studies of the initial oxidation stage of Cu(001) (2022) (0)
Surface Studies of Silicon with a High Resolution Transmission Electron Microscope (1985) (0)
Layered structures, epitaxy, and interfaces : symposium held November 26-30, 1984, Boston, Massachusetts, U.S.A. (1985) (0)
Nanomaterials research in Chicago - the center for nanoscale materials at Argonne National Laboratory. (2001) (0)
Characterization of M edium-R ange O rder in N oncrystalline S ystems by F luctuation X-ray M icroscopy (2005) (0)
Experimental Evidence of a Gaussian Roughness at Si s 111 dy SiO 2 Interfaces (1998) (0)
Transmission electron microscopy of modulated structures (1986) (0)
Fluctuation Microscopy with Electrons or X-Rays: Insight into Medium-Range Order (2004) (0)

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