J. W. Coburn
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Physics
J. W. Coburn's Degrees
- PhD Physics Stanford University
- Masters Physics University of California, Berkeley
- Bachelors Physics University of California, Berkeley
Why Is J. W. Coburn Influential?
(Suggest an Edit or Addition)J. W. Coburn's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Optical emission spectroscopy of reactive plasmas: A method for correlating emission intensities to reactive particle density (1980) (768)
- Ion- and electron-assisted gas-surface chemistry—An important effect in plasma etching (1979) (634)
- Plasma etching—A discussion of mechanisms (1979) (450)
- Positive‐ion bombardment of substrates in rf diode glow discharge sputtering (1972) (383)
- Surface Science Aspects of Etching Reactions (1992) (373)
- Plasma potentials of 13.56-MHz rf argon glow discharges in a planar system (1985) (347)
- The etching of silicon with XeF2 vapor (1979) (271)
- Surface processes in plasma-assisted etching environments (1983) (215)
- Ion‐surface interactions in plasma etching (1977) (172)
- Frequency dependence of ion bombardment of grounded surfaces in rf argon glow discharges in a planar system (1985) (165)
- Plasma-assisted etching (1982) (165)
- Conductance considerations in the reactive ion etching of high aspect ratio features (1989) (160)
- PLASMA DIAGNOSTICS OF AN rf-SPUTTERING GLOW DISCHARGE. (1971) (143)
- The recombination of chlorine atoms at surfaces (1998) (134)
- Ion-enhanced gas-surface chemistry: The influence of the mass of the incident ion (1981) (132)
- Sputtering in the surface analysis of solids: A discussion of some problems (1976) (124)
- A System for Determining the Mass and Energy of Particles Incident on a Substrate in a Planar Diode Sputtering System (1970) (116)
- Some chemical aspects of the fluorocarbon plasma etching of silicon and its compounds (1979) (114)
- Glow‐discharge mass spectrometry—Technique for determining elemental composition profiles in solids (1974) (97)
- A New Technique for the Elemental Analysis of Thin Surface Layers of Solids (1971) (97)
- Appearance potential mass spectrometry: Discrimination of dissociative ionization products (2000) (96)
- Plasma etching A ’’pseudo‐black‐box’’ approach (1977) (91)
- Plasma‐assisted etching mechanisms: The implications of reaction probability and halogen coverage (1985) (91)
- The influence of ion sputtering on the elemental analysis of solid surfaces (1979) (88)
- Plasma–surface interactions (2003) (79)
- Mass spectrometric detection of reactive neutral species: Beam-to-background ratio (1999) (79)
- In situ Auger electron spectroscopy of Si and SiO2 surfaces plasma etched in CF4‐H2 glow discharges (1979) (77)
- Techniques for elemental composition profiling in thin films (1973) (75)
- Recombination coefficients of O and N radicals on stainless steel (2000) (69)
- Heterogeneous recombination of atomic bromine and fluorine (1999) (66)
- Influence of the altered layer on depth profiling measurements (1976) (62)
- Plasma Sources in Analytical Mass Spectrometry (1981) (60)
- Measurements of neutral and ion composition, neutral temperature, and electron energy distribution function in a CF4 inductively coupled plasma (2001) (60)
- Plasma-Assisted Etching in Microfabrication (1983) (60)
- Dependence of F atom density on pressure and flow rate in CF4 glow discharges as determined by emission spectroscopy (1981) (59)
- Plasma etching - a discussion of mechanisms (1981) (55)
- Plasma chemistry of fluorocarbons as related to plasma etching and plasma polymerization (1980) (50)
- A Study of the Neutral Species rf Sputtered from Oxide Targets (1974) (49)
- Diagnostics of an r.f. sputtering glow discharge - correlation between atomic absorption and mass spectrometry (1975) (48)
- Surface processing with partially ionized plasmas (1991) (45)
- Pressure Considerations Associated with Ion Sampling from Glow Discharges (1971) (42)
- Surface-science aspects of plasma-assisted etching (1994) (41)
- Elemental Composition Profiling in Thin Films by Glowdischarge Mass Spectrometry: Depth Resolution (1975) (41)
- A mass spectrometric study of neutral−sputtered species in an rf glow discharge sputtering system (1975) (39)
- Electron‐beam effects in depth profiling measurements with Auger electron spectroscopy (1975) (37)
- Molecular‐beam study of gas‐surface chemistry in the ion‐assisted etching of silicon with atomic and molecular hydrogen and chlorine (1990) (37)
- An XPS and Auger investigation of CF+3 ion bombardment of silicon (1979) (35)
- Etching of ruthenium coatings in O2- and Cl2-containing plasmas (2006) (33)
- Mass spectrometric studies of positive ions in r.f. glow discharges (1989) (33)
- Effect of ion bombardment on the plasma‐assisted etching and deposition of plasma perfluoropolymer thin films (1987) (33)
- Heteronuclear and homonuclear surface abstraction reactions of Cl, Br, and F (1999) (33)
- Ion-beam-assisted etching of Si with fluorine at low temperatures (1994) (31)
- Role of ions in reactive ion etching (1994) (31)
- Ion‐assisted etching of Si with Cl2: The effect of flux ratio (1994) (31)
- Fundamental beam studies of radical enhanced atomic layer deposition of TiN (2003) (27)
- Quartz crystal microbalance simulation of the directionality of Si etching in CF4 glow discharges (1986) (24)
- The role of energetic ion bombardment in silicon-fluorine chemistry (1987) (22)
- The dissociative electronic desorption of carbon monoxide from tungsten (1968) (22)
- Plasma-assisted etching of tungsten films: A quartz-crystal microbalance study (1988) (18)
- Surface loss coefficients of CFx and F radicals on stainless steel (2000) (17)
- Vacuum beam studies of photoresist etching kinetics (2000) (15)
- Plasma and Reactive Ion Etching (2001) (15)
- Vacuum beam studies of fluorocarbon radicals and argon ions on Si and SiO2 surfacesa) (2004) (14)
- Plasma potentials in supported discharges and their influence on the purity of sputter‐deposited films (1983) (14)
- Argon and oxygen ion chemistry effects in photoresist etching (2002) (14)
- Abstract: Mechanisms in plasma etching (1978) (13)
- F2 adsorption on Si observed with SIMS and QCM (1982) (13)
- Dual atom beam studies of etching and related surface chemistries (1992) (13)
- Ion‐induced volatilization (IIV): A method for quantitative measurement of the amounts of perfluoropolyether lubricant on a particulate disk surface and in the media porosity (1986) (12)
- Role of oxygen in ion-enhanced etching of poly-Si and WSix with chlorine (1998) (12)
- Chlorine‐enhanced F‐atom etching of silicon (1994) (12)
- Etching of silicon and silicon dioxide by halofluorocarbon plasmas (1989) (12)
- The formation of complexes of the type X2+⋅R in rf rare gas glow discharges (1976) (11)
- Summary Abstract: Diagnostics in plasma processing (1986) (10)
- Abstract: Etching in reactive plasmas (1979) (9)
- Magnetic field control of reactive plasma etching (1979) (9)
- C4F8 dissociation in an inductively coupled plasma (2003) (8)
- Some Fundamental Aspects of Plasma-Assisted Etching (2000) (8)
- A method for increasing the etch‐rate ratio of oxides to nonoxides in inert‐gas ion milling processes (1980) (8)
- Abstract: Some chemical aspects of the fluorocarbon plasma etching of silicon and its compounds (1979) (7)
- Deuterium and fluorine radical reaction kinetics on photoresist (2002) (7)
- Sputter Deposition of EuO Thin Films (1971) (6)
- Mechanisms in Plasma-assisted Etching (1988) (6)
- Fluorine atom subsurface diffusion and reaction in photoresist (2003) (6)
- Abstract: Composition profiling—a comparison of surface analysis techniques vs methods involving the detection of sputtered species (1975) (5)
- Physical and chemical mechanisms in the ion-enhanced etching of silicon (1984) (5)
- H atom reactions with GaAs 〈001〉 (1990) (4)
- Summary Abstract: Ion‐enhanced gas‐surface chemistry (1982) (4)
- On the effect of low-energy ion bombardment on polystyrene and polymethylmethacrylate etch rates in rf plasmas (1989) (4)
- Summary Abstract: Surface processes in plasma-assisted etching environments (1983) (3)
- Mass-Spectrometric Observation of Gaseous Species Evolved in a Vacuum System by Solid-State Electrolysis (1971) (3)
- The Role of Ions in Reactive Ion Etching with Low Density Plasmas (1997) (3)
- Etching Reactions at Solid Surfaces (1984) (3)
- Quartz Crystal Microbalances for Plasma-Assisted Etching Studies and Applications (1984) (3)
- Quartz Crystal Microbalance Studies of the Plasma-Assisted Etching of Polyimide and Tungsten Thin Films (1986) (3)
- Fundamental beam studies of deuterium and fluorine radical reaction kinetics on surfaces (2003) (3)
- Mass Spectrometric Studies of Ions Produced in Halofluorocarbon Plasma Etching of Silicon and Silicon Dioxide (1988) (2)
- Comparison of Model and Experiment for Ar/O$_{2}$ Inductively Coupled Plasmas (2005) (2)
- Summary Abstract: Plasma potentials of 13.56 MHz rf argon glow discharges in a planar system (1985) (2)
- A sims study of ion-assisted etching mechanisms; adsorbed fluorine on Si removed by ion bombardment (1982) (1)
- Plasma-assisted etching: Ion-assisted surface chemistry (1985) (1)
- Tetraf luoromethane Injected into a dc Argon Glow Discharge (1976) (1)
- Reactive Gas Glow Discharges (1991) (1)
- Summary Abstract: Plasma–surface interactions in dry processing (1981) (1)
- Atomic and Molecular Beam Studies of Etching and Related Surface Chemistries (1992) (0)
- 1 – Quartz Crystal Microbalances for Studies of Plasma-Surface Interactions (1989) (0)
- Beam Studies of Etching Si and WSi x with Chlorine and Oxygen (1996) (0)
- Surface Science Aspects of Etching and Wall Reactions in High Density Plasmas (1997) (0)
- THE EVOLUTION OF PLASMA ETCHING IN INTEGRATED CIRCUIT MANUFACTURING (2002) (0)
- Abstract: A Discussion of Some Techniques for Obtaining Elemental Composition Profiles (1973) (0)
- Plasma‐assisted etching: ion‐assisted surface chemistry (2008) (0)
- Etch By-Products in Plasma Etching (2002) (0)
- MASS SPECTROMETRIC STUDIES OF POSITE IONS IN RF GLOW DISCHARGES (1988) (0)
- Experimental and modeling studies of fluorocarbon plasmas. (1997) (0)
- Pressure Considerations Associated with Ion Sampling from Low-Pressure Glow Discharges (1972) (0)
- The Influence of Ion Bombardment on Etching Reactions (1985) (0)
- Abstract: Positive Ion Bombardment of Substrates in r.f. Glow Discharge Sputtering (1973) (0)
- Plasma processing : symposium held April 15-18, 1986, Palo Alto, California, U.S.A. (1986) (0)
- Diagnostics and Modeling of an Inductively Coupled Plasma (2000) (0)
- Paper X(iv) Properties of polymeric liquid lubricant films adsorbed on patterned gold and silicon surfaces under high vacuum (1987) (0)
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