Jack. Washburn

Jack. Washburn's AcademicInfluence.com Rankings

Jack. Washburn

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Jack. Washburn's Published Works

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Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Formation Mechanism of Nanotubes in GaN (1997) (282)
Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN (1996) (269)
Some observations on the amorphous to crystalline transformation in silicon (1982) (224)
Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy (1985) (166)
Effect of Si doping on the dislocation structure of GaN grown on the A‐face of sapphire (1996) (143)
Stress-induced movement of crystal boundaries (1953) (139)
Electron microscope observations of deformed magnesium oxide (1960) (139)
Ni, Pd, and Pt on GaAs: A comparative study of interfacial structures, compositions, and reacted film morphologies (1987) (136)
Microstructure of Ti/Al ohmic contacts for n-AlGaN (1998) (127)
MECHANISM OF SOLID STATE PRESSURE WELDING (1975) (117)
STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON (1963) (115)
Diffusion‐Induced Dislocations in Silicon (1964) (114)
A comparative study of phase stability and film morphology in thin‐film M/GaAs systems (M=Co, Rh, Ir, Ni, Pd, and Pt) (1987) (103)
Structure and composition of NixGaAs (1985) (92)
Impurity diffusion and gettering in silicon (1985) (91)
RECENT OBSERVATIONS ON THE MOTION OF SMALL ANGLE DISLOCATION BOUNDARIES (1954) (91)
PRECIPITATION IN HIGH PURITY SILICON SINGLE CRYSTALS. (1971) (83)
Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition (1999) (82)
Structural characterization of bulk GaN crystals grown under high hydrostatic pressure (1996) (75)
Crystal structure of κ-In2Se3 (2002) (74)
Initial stages of the Pd−GaAs reaction: formation and decomposition of ternary phases (1986) (71)
Electron microscopy characterization of GaN films grown by molecular-beam epitaxy on sapphire and SiC (1995) (62)
Deformation behaviour and shape memory effect of near equi-atomic NiTi alloy (1977) (61)
Characteristics of GaAs/AlGaAs MODFETs grown directly on (1984) (60)
A new technique for observing the amorphous to crystalline transformation in thin surface layers on silicon wafers (1980) (59)
Ion beam synthesis of cubic FeSi2 (1993) (57)
Dislocation formation mechanism in strained InxGa1−xAs islands grown on GaAs(001) substrates (1996) (56)
Self-climb of dislocation loops in magnesium oxide (1972) (56)
Synthesis of GaN by N ion implantation in GaAs (001) (1995) (53)
Stacking Faults in Epitaxial Silicon (1962) (53)
Microstructure of annealed low-temperature-grown GaAs layers (1991) (52)
On the shrinkage of rod‐shaped defects in boron‐ion‐implanted silicon (1977) (52)
High resolution transmission electron microscopy study of Se+‐implanted and annealed GaAs: Mechanisms of amorphization and recrystallization (1984) (50)
Phase formation in the Pd‐InP system (1988) (50)
Transmission electron microscope investigation of the growth of copper precipitate colonies in silicon (1973) (50)
Direct observations of interactions between imperfect loops and moving dislocations in aluminium (1964) (49)
Ni‐InP reaction: Formation of amorphous and crystalline ternary phases (1987) (48)
Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy (1987) (47)
Rapid thermal annealing of low-temperature GaAs layers (1995) (46)
Schottky and Ohmic Au contacts on GaAs: Microscopic and electrical investigation (1986) (45)
Spontaneous Ordering in Bulk GaN:Mg Samples (1999) (44)
The stacking-fault energy in the Ag-In series (1966) (43)
Near‐surface defects formed during rapid thermal annealing of preamorphized and BF+2‐implanted silicon (1984) (42)
Self diffusion in magnesium oxide (1973) (42)
Direct evidence of arsenic clustering in high dose arsenic‐implanted silicon (1984) (41)
On the origins of structural defects in BF 2+-implanted and rapid-thermally-annealed silicon: Conditions for defect-free regrowth (1985) (40)
Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Al ohmic contacts to n-AlGaN/GaN (2001) (40)
The formation of a continuous amorphous layer by room .. temperature implantation of boron into silicon (1988) (39)
PRECIPITATION OF VACANCIES IN METALS (1963) (39)
Low‐temperature ion‐induced epitaxial growth of α‐FeSi2 and cubic FeSi2 in Si (1993) (38)
Diffusion‐Induced Defects in Silicon. II (1967) (38)
Radiation‐Induced Precipitation in Silicon During High‐Voltage Electron Microscope Observation (1971) (37)
INTERSECTION CROSS SLIP (1965) (37)
Ordering in bulk GaN : Mg samples: defects caused by Mg doping (1999) (37)
High Resolution Observations of Copper Vacancy Ordering in Chalcocite (Cu2S) and the Transformation to Djurleite (Cu1.97 to 1.94S) (1982) (36)
EFFECT OF INITIAL DISLOCATION DENSITY ON THE STRESS–STRAIN CURVE AND ON SURFACE INDICATION OF SLIP IN COPPER (1967) (36)
Precipitate Colonies in Silicon (1972) (36)
The initiation of plastic flow in copper (1964) (35)
Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies (2001) (35)
Electron microscopy and strength of crystals : proceedings of the first Berkeley International Materials Conference, "the impact of transmission electron microscopy on theories of the strength of crystals" held at the University of California, Berkeley, July 5-8, 1961 (1963) (35)
Characterization of surface faceting on (110)GaAs/GaAs grown by molecular beam epitaxy (1988) (35)
Formation of coherent twins in YBa 2 Cu 3 O 7–δ superconductors (1989) (35)
Structural Defects in Heteroepitaxial and Homoepitaxial GaN (1995) (33)
On the stability of the dislocation substructure in quenched aluminium (1960) (33)
Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix (1998) (33)
Recrystallization of buried amorphous layers and associated electrical effects in P+-implanted Si (1982) (33)
The crystalline to amorphous transformation in silicon (1983) (32)
A three-stage model for the development of secondary defects in ion-implanted silicon (1978) (32)
Kinking in Zinc Single-Crystal Tension Specimens (1952) (31)
Direct observation of dislocations in magnesium oxide (1960) (31)
Climb kinetics of dislocation loops in aluminium (1968) (30)
Tensile Behavior of Lithium Fluoride (1962) (29)
Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers (1993) (29)
Morphological transition of InAs islands on GaAs(001) upon deposition of a GaAs capping layer (1994) (28)
Strain hardening of latent slip systems in zinc crystals (1954) (28)
High resolution structural characterization of the amorphous‐crystalline interface in Se+‐implanted GaAs (1984) (28)
Transmission electron microscopy of threading dislocations in ZnO films grown on sapphire (2001) (27)
Morphology of Au/GaAs interfaces (1986) (27)
In/GaAs reaction: Effect of an intervening oxide layer (1986) (27)
Ternary phases in the Pd-GaAs system: Implications for shallow contacts to GaAs (1985) (27)
Plastic Deformation of Cuprous Oxide (1968) (27)
DIRECT DISLOCATION VELOCITY MEASUREMENT IN SILICON BY X-RAY TOPOGRAPHY (1970) (26)
On the climb of dislocations in boron‐ion‐implanted silicon (1977) (26)
Reduction of threading dislocation density in GaN using an intermediate temperature interlayer (2000) (26)
Steady-state thermally annealed GaAs with room-temperature-implanted Si (1980) (25)
Cross‐section transmission electron microscopy study of carbon‐implanted layers in silicon (1990) (25)
Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy (1997) (25)
Preyield Plastic Deformation in Copper Polycrystals (1969) (24)
Stress-induced movement of twin boundaries in zinc (1967) (24)
Stress releasing mechanisms in In0.2Ga0.8As layers grown on misoriented GaAs [001] substrate (1993) (23)
Substitutional placement of phosphorus in ion implanted silicon by recrystallizing amorphous/crystalline interface (1983) (23)
Defects formed from excess vacancies in aluminum (1965) (23)
TRANSMISSION ELECTRON MICROSCOPY AND RUTHERFORD BACKSCATTERING STUDIES OF DIFFERENT DAMAGE STRUCTURES IN p+ IMPLANTED Si (1980) (22)
Nano-Tubes in GaN (1996) (22)
The MEVVA ion source for high current metal ion implantation (1987) (22)
The effect of recoiled oxygen on damage regrowth and electrical properties of through-oxide implanted Si (1983) (21)
Effect on electrical properties of segregation of implanted P+ at defect sites in Si (1980) (21)
Damage Produced by Moving Dislocations in MgO (1962) (21)
Convergent Beam Electron Diffraction and Transmission Electron Microscopy Study of Interfacial Defects in Gallium Nitride Homoepitaxial Films (1997) (20)
SCHOTTKY BARRIER INSTABILITIES DUE TO CONTAMINATION (1988) (20)
Ge/Si heterostructures grown by Sn-surfactant-mediated molecular beam epitaxy (1995) (20)
Some new results in the characterization of defects in phosphorus ion-implanted silicon (1975) (19)
On precipitation of phosphorous in ion implanted silicon (1972) (19)
Study of high quality GaN grown by OMVPE using an intermediate layer (2000) (18)
Coarsening and phase transition of FeSi2 precipitates in Si (1994) (17)
Inversion boundaries in GaAs grown on Si (1988) (17)
Tem/Hrem Analysis of Defects in GaN Epitaxial Layers Grown by MOVPE on SiC and Sapphire (1997) (17)
Recrystallization of amorphous gallium arsenide by ion beams (1984) (16)
Possible dislocation multiplication source in (001) semiconductor epitaxy (1990) (16)
Structural analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN (2000) (16)
The nature and habit planes of defects in P+ ion-implanted silicon (1974) (16)
TEM Study of Defects in Laterally Overgrown GaN Layers (1998) (16)
Comparison between structural properties of bulk GaN grown in liquid Ga under high N pressure and GaN grown by other methods (2002) (16)
Aging of Schottky diodes formed on air-exposed and atomically clean GaAs surfaces: An electrical study (1988) (15)
Decoration of flux pinning positions in YBa2Cu3O7−δ superconductors (1988) (15)
Transition thickness of semiconductor heteroepitaxy (2000) (15)
CRYSTALLOGRAPHIC RELATIONSHIPS BETWEEN GaAs, As AND Ga2O3 AT THE GaAs-THERMAL OXIDE INTERFACE (1985) (15)
Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy (1986) (15)
Influence of Jog Concentration on the Conservative Motion of Dislocations in Copper (1966) (15)
Nucleation and evolution of misfit dislocations in ZnSe/GaAs (001) heterostructures grown by low‐pressure organometallic vapor phase epitaxy (1996) (15)
On the use of convergent-beam electron diffraction for identification of antiphase boundaries in GaAs grown on Si (1988) (15)
Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer (2001) (14)
Structure and electrical properties of TiN/GaAs Schottky contacts (1988) (14)
Phase Formation Sequence In The Pd-Gaas System (1985) (14)
Stability of dislocation loops near a free surface (1972) (14)
The formation of extrinsic-intrinsic faulting (1967) (14)
Defect formation in epitaxial crystal growth (1991) (13)
Pulsed electron beam induced recrystallization and damage in GaAs (1979) (13)
On the formation of dislocation substructure during growth of a crystal from its melt (1958) (13)
On the mechanism of the shape memory effect in Ni-Ti alloy (1976) (13)
THE STRUCTURE OF GaAs/Si(211) HETEROEPITAXIAL LAYERS (1987) (12)
Influence of microstructure on electrical properties of diluted GaNxAs1−x formed by nitrogen implantation (2001) (12)
Effect of Si Doping on The Structure of Gan (1996) (12)
Anomalies in annealed LT-GaAs samples (1993) (12)
Interaction of Au with GaSb and its Impact on the Formation of Ohmic Contacts (1995) (12)
Defect control during solid phase epitaxial growth of SiGe alloy layers (1993) (12)
Structural, electrical, and optical studies of GaAs implanted with MeV As or Ga Ions (1997) (12)
Effect of vacancy clusters on yielding and strain hardening of copper (1963) (11)
On the possibility of nucleating loops with burgers vector (DC′) by the clustering of interstitials (1975) (11)
Molecular beam epitaxy of InAs and its interaction with a GaAs overlayer on vicinal GaAs (001) substrates (1994) (11)
Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions (1994) (11)
Role of Dopants and Impurities on Pinhole Formation; Defects Formed At Ingan/Gan And AlGaN/GaN Quantum Wells (1997) (11)
Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates (1993) (11)
Dynamic Annealing Phenomena and the Origin of RTA-Induced “Hairpin” Dislocations (1984) (10)
Relationship between Tc and electronegativity differences in compound superconductors (1991) (10)
Identification of interstitial‐ and vacancy‐type dislocation loops in ion‐implanted silicon (1974) (10)
Sequential phase formation by ion-induced epitaxy in fe-implanted si(001) (1995) (10)
Twin formation in As precipitates in low-temperature GaAs during high-temperature annealing (1998) (10)
Interfacial defects and morphology of InGaAs epitaxial layers grown on tilted GaAs substrates (1993) (10)
Interface morphology and phase distribution in the Cu2−xS/CdS heterojunction: A transmission electron microscope investigation (1984) (9)
Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts (1989) (9)
Determination of the predominant type of stacking fault in cobalt by nuclear magnetic resonance and electron microscopy (1964) (9)
Solid-state reaction in Pd/ZnSe thin film contacts (1995) (9)
Effect of Thermal History on the Dislocation Substructure near the Surfaces of a Lithium Fluoride Crystal (1960) (9)
Extrinsic-Intrinsic Stacking-Fault Pairs in Epitaxial Silicon (1963) (9)
SOME OBSERVATIONS ON THE WORK HARDENING OF METALS FUNDAMENTAL STUDIES RELATED TO THE ORIGIN AND NATURE OF CREEP OF METALS. Technical Report 8 (1953) (8)
Transmission electron microscopy and Rutherford backscattering studies of single and double discrete buried damage layers in P+ implanted Si on subsequent laser annealing (1981) (8)
Nanotubes and Pinholes in GaN and their Formation Mechanism (1997) (8)
Materials Research Society Symposia Proceedings. Volume 36. Impurity Diffusion and Gettering in Silicon Held on November 27-30, 1984 at Boston, Massachusetts, (1985) (8)
Tem Structure Characterization Of Ti/Al and Ti/Al/Ni/Au Ohmic Contacts For n-GaN (1996) (8)
Stability of the Work‐Hardened State in fcc Metals (1966) (8)
Metallurgy of Al–Ni–Ge ohmic contact formation on n‐GaAs (1995) (8)
A Field ion Microscope Investigation of 10 MeV Proton Damage in Iridium (1969) (7)
Observations of pretransformation lattice instability in near‐equiatomic NiTi alloy (1978) (7)
STACKING FAULTS IN QUENCHED ALUMINUM (1963) (7)
Microstructure and optical properties of black chrome before and after exposure to high temperatures (1979) (7)
Schottky barrier contacts on defect‐free GaAs (110) (1990) (7)
REGROWTH BEHAVIOR OF THREE DIFFERENT DAMAGE STRUCTURES IN P+ IMPLANTED AND SUBSEQUENTLY LASER ANNEALED Si (1980) (7)
Polarity of GaN (1998) (7)
New Al-Ni-Ge contacts on GaAs: Their structure and electrical properties (1988) (7)
Mechanism for nearly ohmic behavior in annealed Au/n-GaAs Schottky diodes (1989) (7)
DISLOCATION DIPOLES IN MgO (1966) (7)
Ion-beam-induced simultaneous epitaxial growth of α- and cubic FeSi2 in Si (100) at 320°C (1993) (6)
Recrystallization of high energy As‐implanted GaAs studied by transmission electron microscopy (1996) (6)
Interfacial reaction behavior of Pt, Pd, and Ni on ZnSe (1997) (6)
Annealing of stacking-fault tetrahedra in gold (1967) (6)
Fatigue Deformation of Magnesium Oxide (1963) (5)
Formation and Effects of Secondary Defects in Ion implanted Silicon (1980) (5)
Experimental Observations Concerning the Collapse of Dislocation Loops During Annealing (1956) (5)
Nonconservative formation of 〈100〉 misfit dislocation arrays at In0.2Ga0.8As/GaAs(001) interfaces during post‐growth annealing (1993) (5)
Phase Formation in the Pt/InP Thin Film System (1989) (5)
Nucleation of misfit dislocations in In0.2Ga0.8As epilayers grown on GaAs substrates (1995) (5)
Ordering in InGaAs/InAlAs layers (1993) (5)
The Structure and Electrical Properties of Au Contacts to GaAs (1985) (5)
INTERACTION BETWEEN PRISMATIC AND GLISSILE DISLOCATIONS (1962) (5)
Indexing of diffracting planes using the Kikuchi pattern (1974) (5)
TEM study of Mg-doped bulk GaN crystals (1999) (5)
Electron microscopic studies of micro-erosion in brittle solids (1973) (5)
Direct evidence of presence of both interstitial and vacancy dislocation loops in plastically deformed and subsequently annealed magnesium oxide (1972) (5)
Comparison Between Ion-Beam and Thermal-Annealing Induced Solid Phase Epitaxy in Fe-Implanted Si (1993) (5)
On the nature of the long‐term degradation of cadmium sulfide solar cells (1974) (5)
COMPUTER SIMULATION OF THE CONTRAST OF SMALL DISLOCATION LOOPS IN FIELD-ION IMAGES OF F.C.C. CRYSTALS (1976) (4)
Al-based thermal oxides in vertical cavity surface emitting lasers (1997) (4)
The structure of Al/GaAs interfaces (1986) (4)
Annealing behavior of Au(Te)/n-GaAs contacts (1993) (4)
Structural and photoluminescence studies of Er implanted Be doped and undoped low-temperature grown GaAs (1999) (4)
High resolution electron microscopy studies of native oxide on silicon (1983) (4)
The role of the multi buffer layer technique on the structural quality of GaN (2000) (4)
Atomic Scale Analysis of InGaN Multi-Quantum Wells (1999) (4)
Effects of Al2O3 cap on the structural and electrical properties of Au/Te/Au contacts on an n‐type GaAs substrate (1993) (4)
Structural characterization of self-organized nanostructures (1998) (4)
Morphology of Al—Ni—Ge ohmic contacts to n-GaAs as a function of contact composition (1994) (4)
Transmission electron microscopy and photoluminescence studies of Er implanted low-temperature grown GaAs:Be (1998) (4)
Atomic Structure Of Grain Boundaries And Interfaces In Iiinitrides Epitaxial Systems (1997) (4)
Effect of oxygen on chromium-structural defects interaction in ion-implanted gallium arsenide (1982) (4)
Evolution of Cubic FeSi 2 in Si upon Thermal Annealing (1993) (3)
Dislocation Etch Pits on {110} Planes of Magnesium Oxide (1966) (3)
ON MeV He+ DECHANNELING FROM SECONDARY DEFECTS IN Si (1981) (3)
Megavolt Bioron and Arsenic Implantation into Silicon (1983) (3)
Subthreshold displacement damage in copper-aluminum alloys during electron irradiation (1976) (3)
GROWTH OF SLIP BANDS AND THE NUCLEATION OF CRACKS IN MAGNESIUM OXIDE (1960) (3)
High‐temperature stability of Nb/GaAs and NbN/GaAs interfaces (1988) (3)
Mechanism of Solid State Pressure Welding Study establishes a rational basis for atom-to-atom bonding that supports neither the film theory nor the dif fusion principle (1975) (3)
The Influence of Current Stressing on the Structure of Ag Contacts to GaAs (1987) (3)
ON THE ORIENTATION OF PERFECT PRISMATIC DISLOCATION LOOPS IN PURE ALUMINUM (1964) (3)
Structural characterization of encapsulated Au/Zn/Au ohmic contacts to p‐type GaAs (1993) (3)
Effect Of Heating Rate End Annealing Temperature On Twin Formation In As+ Implanted (lll) Silicon (1984) (3)
On the comparison of transmission electron microscopy and channeled Rutherford backscattering techniques to evaluate the multilayer subsurface damage structures (1980) (3)
Ductile ceramics — A high temperature possibility (1958) (3)
HETEROEPITAXY OF GaAs ON Si: METHODS TO DECREASE THE DEFECT DENSITY IN THE EPILAYER (1989) (3)
High Resolution Observations of Copper Vacancy Ordering in Chalcocite (Cu2S) and the Transformation to Djurleite (Cu 1.97 to 1.94 S (1982) (3)
Liquid Helium Field‐Ion Microscope for Radiation Damage Investigations (1968) (3)
Observation of Stoichiometry Changes Beneath Metal Contacts on GaAs (1986) (3)
Amorphization of Silicon by Boron Ion Implantation (1986) (2)
Differences and similarities between structural properties of GaN grown by different growth methods (2002) (2)
THE FORMATION OF AMORPHOUS SILICON BY LIGHT ION DAMAGE (1985) (2)
Comparison of Pd/Inp and Pd/GaAs Thin-Film Systems for Device Metallization (1989) (2)
Epitaxial Phase Formation of FeSi 2 in an Fe-Implanted Si by Ion Irradiation and Rapid Thermal Annealing (1992) (2)
Crystal structure of kappa-In2Se3 (2002) (2)
Oxidation Of Singular And Vicinal Surfaces Of Silicon: The Structure Of Si-Si02 Interface (1984) (2)
HIGH-VOLTAGE ELECTRON MICROSCOPY STUDY OF SLIP BAND GROWTH IN COPPER. (1970) (2)
Chapter 9 Structural Defects in Epitaxial III/V Layers (1993) (2)
TRANSIENT ANNEALING OF IMPLANTED GaAs BY A PULSED ELECTRON BEAM (1980) (2)
Mechanisms of generation and atomic structure of defects in III-nitrides epitaxial systems for device applications (1998) (1)
FUNDAMENTAL STUDIES RELATED TO THE ORIGIN AND NATURE OF CREEP OF METALS FIFTH TECHNICAL REPORT ON RECOVERY IN SINGLE CRYSTALS OF ZINC. Technical Report No. 5 (1952) (1)
DISLOCATION CONFIGURATIONS IN DEFORMED MAGNESIUM OXIDE (1965) (1)
High Resolution Transmission Electron Microscopy Study of Se + Implanted and Annealed GaAs (1983) (1)
TEM/HREM of Ti/Al and WNi/Ti/Al ohmic contacts for n-AlGaN (1998) (1)
Damage and in-situ annealing during ion implantation (1982) (1)
Influence of the amorphous-crystalline interface morphology on dislocation nucleation in pre-amorphized silicon (1984) (1)
Megavolt electron irradiation induced regrowth of amorphous zones in silicon (1983) (1)
Effect of N/Ga Flux Ratio in GaN Buffer Layer Growth by MBE on (0001) Sapphire on Defect Formation in the GaN Main Layer (1999) (1)
TEM investigation of titanium-silicide Schottky contacts on GaAs (1985) (1)
DEFECTS FORMED AT THE InGaAs/GaAs INTERFACE (1994) (1)
Regrowth of Implanted–Amorphous Si (1986) (1)
Comparison between structural properties of bulk GaN grown under high N pressure and GaN grown by other methods (2002) (1)
TEM combined with AlxGa1−xAs As marker layers as a technique for the study of GaAs MBE growth (1985) (1)
Transmission electron microscopy analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN (2002) (1)
Investigation of the Interface Integrity of the Thermally Stable Wn/GaAs Schottky Contacts (1989) (1)
Metallurgical and Electrical Properties of Capped Au-based Metallizations on GaAs (1993) (1)
THE INFLUENCE OF POINT DEFECTS ON THE MECHANICAL PROPERTIES OF LITHIUM FLUORIDE. Technical Report No. 1 (1960) (1)
Surface faceting of (110) GaAs: Analysis and elimination (1986) (1)
Interaction of A1 2 O 3 -CAPPED Au/Zn/Au and Au/Te/Au Contacts With (001)GaAs Substrates (1992) (1)
A macro-resonance-cell description for high-Tc oxide superconductors (1989) (1)
Chemical and structural characterization of thermally degraded black chrome (1980) (1)
Structural characterization of thin Ni films deposited on (001) ZnSe (1997) (1)
DISLOCATION SUBSTRUCTURES IN DEFORMED AND RECOVERED MOLYBDENUM (1961) (1)
The atomic structure of Si‐SiO2 interfaces suggesting a ledge mechanism of silicon oxidation (1984) (1)
CLUSTERING OF VACANCIES AND HARDENING (1963) (1)
Effect of stoichiometry on defect distribution in cubic GaN grown on GaAs by plasma-assisted MBE (1996) (1)
Erratum: Structure and Origin of Stacking Faults in Epitaxial Silicon (1963) (1)
Screw Dislocations in GaN (2002) (1)
Reorientation of Misfit Dislocations During Annealing in InGaAs/GaAs(001) Interfaces (1993) (1)
Suppression of Defect Propagation in Heteroepitaxial Structures by Strained Layer Superlattices (1989) (0)
Crystal defects in silicon solar cells—II. Transmission electron microscopy (1963) (0)
ROD-LIKE DEFECTS IN ION IMPLANTED SILICON (2013) (0)
Effects Of Damage-Impurity Interaction On Electrical Properties of Se+-Implanted GaAs (1980) (0)
Effects of structural defects on the activation of sulfur donors in GaNxAs1−x formed by N implantation (2001) (0)
FUNDAMENTAL STUDIES RELATED TO THE ORIGIN AND NATUftE OF CREEP OF METALS Eleventh Technical Report Effect of the Structure of Dislocation Boundries on Yield Strength (2009) (0)
STRUCTURE AND RELIABILITY OF METAL CONTACTS TO GaAs (1991) (0)
Screw Dislocations in MBE GaN Layers Grown on Top of HVPE Layers: Are They Different? (2002) (0)
Research on Cu/sub x/S/(Cd,Zn)S photovoltaic solar energy converters. Final report, March 1977-September 1979 (1980) (0)
Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin AlxGa1-xN Layers Grown by MOCVD. (1999) (0)
High Resolution Study of the Relationship Between Misfit Accommodation and Growth of CU 2-x S in Cds (1983) (0)
A Macro-Resonance-Cell Description for High-T{sub c} Oxide A Macro-Resonance-Cell Description for High-C{sub c} Oxide Superconductors (2017) (0)
Structure and Electronic Properties of Misfit Dislocations in ZnSe/GaAs(001) Heterojunctions (1994) (0)
Lattice imaging of antiphase boundaries in GaAs grown on Si (1988) (0)
TEM combined with Al/sub x/Ga/sub 1-x/ as marker layers as a technique for the study of GaAs MBE growth (1985) (0)
ON THE STABILITY OF THE WORK HARDENED STATE (1966) (0)
TEM investigation of polar-on-nonpolar epitaxy: GaAs-AlGaAs on (100) Ge (1984) (0)
DIRECT EVIDENCE OF Cr-STRUCTURAL DEFECT-OXYGEN INTERACTION IN ION-IMPLANTED GaAs (1981) (0)
Thin film alloys on semiconductor substrates (1990) (0)
A COOPERATIVE GLIDE THEORY OF YIELDING AND SLIP BAND FORMATION (1966) (0)
HIGH RESOLUTION STUDY OF THE CHALCOCITE (Cu2S)-DJURLEITE (Cu1.97S) TRANSFORMATION IN Cu2-xS THIN FILMS (1982) (0)
High resolution TEM studies of defects near Si-SiO/sub 2 interface (1983) (0)
, Formation of Coherent Twins in YB~Cu 3 0 7 _ 0 Superconductors (2013) (0)
Boron precipitates in ion implanted silicon (1975) (0)
Transmission electron microscopy analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN (Eighth Conference on Frontiers of Electron Microscopy in Materials Science) (2002) (0)
TEM studies of P/sup +/ implanted and subsequently laser annealed Si (1979) (0)
Twinning of As precipitates in low-temperature GaAs during high temperature annealing (1998) (0)
Structure of the Si-GaAs Interface: Polar on Nonpolar Epitaxy (1985) (0)
ON THE NATURE OF THE DISLOCATION SUB-STRUCTURE IN DEFORMED COPPER (1962) (0)
Electrical and Structural Properties of Ti Contacts on an Atomically Clean N-Type GaAs Surface (1992) (0)
MIJ-NSR Volume 1, Article 42 (1998) (0)
High-resolution study of the chalcocite (Cu/sub 2/S)-djurleite (Cu/sub 1 97/S) transformation in Cu/sub 2-x/S thin films (1982) (0)
Reducing Dislocation Density by Sequential Implantation of Ge and C in Si (1993) (0)
Compositional nonuniformities and strain relaxation at misoriented InxGa(1−x)As/GaAs interfaces (1993) (0)
Impurity diffusion and gettering in silicon : symposium held November 27-30, 1984, Boston, Massachusetts, U.S.A. (1985) (0)
Summary Abstract: Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy (1986) (0)
Some considerations in the splitting of interstitial frank loops formed by irradiation (1975) (0)
Investigation of the Interface of the Thermally Stable WN/GaAs Schottky Contacts (1989) (0)
Effect of the doping and the Al content on the microstructure and morphology of thin Al{sub x}Ga{sub 1{minus}x}N layers grown by MOCVD[Metal Organic Chemical Vapor Deposition] (2000) (0)
ON THE MECHANISM OF MARTENSITE TRANSFORMATION IN NEAR EQUIATOMIC NiTi ALLOY (1977) (0)
Lawrence Berkeley National Laboratory Recent Work Title Defect Formation in Epitaxial Crystal Growth Permalink (2013) (0)
ANNEALING OF INTERSTITIAL LOOPS IN ARSENIC IMPLANTED SILICON (1983) (0)
EFFECTS OF IMPURITIES AND IMPERFECTIONS ON MECHANICAL PROPERTIES OF METALS. TECHNICAL REPORT NO. 13 (1954) (0)
Materials study of silicon-on-lnsulator material by TEM (1991) (0)
HIGH RESOLUTION OBSERVATIONS OF COPPER VACANCY ORDERING IN CHALCOCITE ( Cu 2 S ) AND THE TRANSFORMATION TO DJURLEITE ( Cu 1 97194 S ) (2012) (0)
Lawrence Berkeley National Laboratory Recent Work Title Defect Formation in Epitaxial Crystal Growth Permalink (2013) (0)
TENSILE BEHAVIOR OF LITHIUM FLUORIDE. Fourth Technical Report (1961) (0)
Characterization Of Single Crystal Cu2S/CdS Heterojunctions By High Resolution Electron Microscopy (1984) (0)
CLIMB OF 1/3 DISLOCATIONS IN GOLD (1969) (0)
THE MEASUREMENT OF THE ABSOLUTE ENERGY OF LOW ANGLE DISLOCATION BOUNDARIES IN ZINC (1956) (0)
Interaction of prismatic and glissile dislocations (1962) (0)
Structural and photoluminescence analysis of Er implanted LT-GaAs (1998) (0)
Materials and Molecular Research Division annual report 1975. [Summaries of research activities at Lawrence Berkeley Laboratory, University of California] (1975) (0)
Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin AlxGa1−xN Layers Grown by MOCVD (2000) (0)
PLASTIC DEFORMATION OP CUPROUS OXIDE (1967) (0)
DIRECT OBSERVATION OF RADIATION INDUCED PRECIPITATION IN HIGH VOLTAGE ELECTRON MICROSCOPE (1975) (0)
DIRECT OBSERVATIONS OF DISLOCATION CLIMB (1972) (0)
Correlation Between the Microstructures and the Electrical Properties of Ni/Au/Te/Au Contacts on n-GaAs (1994) (0)
FUNDAMENTAL STUDIES RELATED TO THE ORIGIN AND NATURE OF CREEP OF METALS SIXTH TECHNICAL REPORT ON EFFECT OF STRESS ON INITIAL CREEP RATE OF ZINC SINGLE CRYSTALS (1952) (0)
EFFECT OF INITIAL DISLOCATION DENSITY ON SINGLE SLIP STRAIN HARDENING OF COPPER (1967) (0)
DIFFUSION INDUCED DEFECTS IN TRANSISTORS - PART II (1966) (0)
Dislocation core in GaN (2002) (0)
Mg Segregation, Difficulties of P-Doping in GaN (1999) (0)
DUCTILE CERAMICS RESEARCH. Final Report (1962) (0)
Center for Advanced Materials, Annual Report, 1989, Electronic Materials (1990) (0)
Thin Film Ag/YBCO Multistructures for Metal Contact Applications (1992) (0)
Structural and Photoluminescence Studies of Er Implanted Lt-GaAs:Be (1998) (0)
OXYGEN VACANCIES AND TWIN BOUNDARIES IN YBA[SUB]2 CU[SUB]3 O[SUB]7-DELTA SUPERCONDUCTORS (1988) (0)
Recent results on (Cd,Zn)S single-crystal film growth and Cu/sub x/S-(Cd, Zn)S heterojunctions (1977) (0)
Electron microscopy of reactions on compound semiconductor surfaces (1985) (0)
LOW TEMPERATURE CREEP OF ZINC SINGLE CRYSTALS (1954) (0)
Dislocations in Semiconductors: Glide and Climb (2001) (0)
Low ‐ temperature ion ‐ induced epitaxial growth of α ‐ FeSi 2 and cubic FeSi 2 in (2016) (0)
Characterization of RF sputtered ZnO piezoelectric films using transmission electron microscope (1975) (0)
On the dynamic nature of microscopy specimens at lattice resolution (1989) (0)
Transient annealing of GaAs by electron and laser beams (1979) (0)
Investigation of misfit dislocation configurations in MBE-grown InGaAs layers on misaligned GaAs (001) substrates (1992) (0)
TEM AND RBS STUDIES OF SINGLE AND DOUBLE DISCRETE BURIED DAMAGE LAYERS IN P+-IMPLANTED Si ON SUBSEQUENT LASER ANNEALING (1980) (0)
FUNDAMENTAL STUDIES RELATED TO THE ORIGIN AND NATURE OF CREEP OF METALS. TECHNICAL REPORT NO. 10. STRAIN HARDENING OF LATENT SLIP SYSTEM IN ZINC CRYSTALS (1954) (0)
Cu/sub x/S-(Cd,Zn)S photovoltaic solar energy converters. Quarterly report No. 2, July--September 1977 (1977) (0)
TEM Study of High Quality GaN Grown by OMVPE Using an Intermediate Layer (2000) (0)
Influence of Mg and In on defect formation in GaN: bulk and MOCVD grown samples (2000) (0)
A correlation between T(sub 3) and electronegativity difference in high-temperature superconductors (1990) (0)
DEFORMATION PROCESSES IN MATERIALS. Final Report (1962) (0)
Atomic Structure of Twinned As Precipitates in Lt-GaAs (1998) (0)
Lawrence Berkeley National Laboratory Recent Work Title Investigation of Misfit Dislocation Configurations in MBE-Grown InGaAs Layers on Misaligned GAAs ( 001 ) Substrates Permalink (2013) (0)
A RAPID METHOD FOR DISTINGUISHING VACANCY AND INTERSTITIAL LOOPS IN ION IMPLANTED CRYSTALS (1972) (0)
Origins of structural defects in BF/sub 2//sup +/-implanted and rapid-thermally-annealed silicon: conditions for defect-free regrowth (1984) (0)
DEFORMATION PROCESSES IN MATERIALS. PART I. FACTORS AFFECTING THE INITIATION OF PLASTIC FLOW IN METALS. PART II. SUMMARY STATEMENT OF OBJECTIVES AND ACCOMPLISHMENTS (1962) (0)
Tem/Hrem Structural Characterization of Directionally Solidified Gaas-Cras Eutectic Crystals (1995) (0)
CLIMB OF PRISMATIC LOOPS IN Cu-Al ALLOYS DURING IRRADIATION IN THE HVEM (1975) (0)
DUCTILE CERAMICS RESEARCH (1962) (0)
MOBILITY OF PRISMATIC DISLOCATION HALF-LOOPS IN COPPER (1971) (0)
Crystal structure of κ-In 2 Se (2002) (0)

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