Jack. Washburn
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Physics
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(Suggest an Edit or Addition)Jack. Washburn's Published Works
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Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Formation Mechanism of Nanotubes in GaN (1997) (282)
- Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN (1996) (269)
- Some observations on the amorphous to crystalline transformation in silicon (1982) (224)
- Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy (1985) (166)
- Effect of Si doping on the dislocation structure of GaN grown on the A‐face of sapphire (1996) (143)
- Stress-induced movement of crystal boundaries (1953) (139)
- Electron microscope observations of deformed magnesium oxide (1960) (139)
- Ni, Pd, and Pt on GaAs: A comparative study of interfacial structures, compositions, and reacted film morphologies (1987) (136)
- Microstructure of Ti/Al ohmic contacts for n-AlGaN (1998) (127)
- MECHANISM OF SOLID STATE PRESSURE WELDING (1975) (117)
- STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON (1963) (115)
- Diffusion‐Induced Dislocations in Silicon (1964) (114)
- A comparative study of phase stability and film morphology in thin‐film M/GaAs systems (M=Co, Rh, Ir, Ni, Pd, and Pt) (1987) (103)
- Structure and composition of NixGaAs (1985) (92)
- Impurity diffusion and gettering in silicon (1985) (91)
- RECENT OBSERVATIONS ON THE MOTION OF SMALL ANGLE DISLOCATION BOUNDARIES (1954) (91)
- PRECIPITATION IN HIGH PURITY SILICON SINGLE CRYSTALS. (1971) (83)
- Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition (1999) (82)
- Structural characterization of bulk GaN crystals grown under high hydrostatic pressure (1996) (75)
- Crystal structure of κ-In2Se3 (2002) (74)
- Initial stages of the Pd−GaAs reaction: formation and decomposition of ternary phases (1986) (71)
- Electron microscopy characterization of GaN films grown by molecular-beam epitaxy on sapphire and SiC (1995) (62)
- Deformation behaviour and shape memory effect of near equi-atomic NiTi alloy (1977) (61)
- Characteristics of GaAs/AlGaAs MODFETs grown directly on (1984) (60)
- A new technique for observing the amorphous to crystalline transformation in thin surface layers on silicon wafers (1980) (59)
- Ion beam synthesis of cubic FeSi2 (1993) (57)
- Dislocation formation mechanism in strained InxGa1−xAs islands grown on GaAs(001) substrates (1996) (56)
- Self-climb of dislocation loops in magnesium oxide (1972) (56)
- Synthesis of GaN by N ion implantation in GaAs (001) (1995) (53)
- Stacking Faults in Epitaxial Silicon (1962) (53)
- Microstructure of annealed low-temperature-grown GaAs layers (1991) (52)
- On the shrinkage of rod‐shaped defects in boron‐ion‐implanted silicon (1977) (52)
- High resolution transmission electron microscopy study of Se+‐implanted and annealed GaAs: Mechanisms of amorphization and recrystallization (1984) (50)
- Phase formation in the Pd‐InP system (1988) (50)
- Transmission electron microscope investigation of the growth of copper precipitate colonies in silicon (1973) (50)
- Direct observations of interactions between imperfect loops and moving dislocations in aluminium (1964) (49)
- Ni‐InP reaction: Formation of amorphous and crystalline ternary phases (1987) (48)
- Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy (1987) (47)
- Rapid thermal annealing of low-temperature GaAs layers (1995) (46)
- Schottky and Ohmic Au contacts on GaAs: Microscopic and electrical investigation (1986) (45)
- Spontaneous Ordering in Bulk GaN:Mg Samples (1999) (44)
- The stacking-fault energy in the Ag-In series (1966) (43)
- Near‐surface defects formed during rapid thermal annealing of preamorphized and BF+2‐implanted silicon (1984) (42)
- Self diffusion in magnesium oxide (1973) (42)
- Direct evidence of arsenic clustering in high dose arsenic‐implanted silicon (1984) (41)
- On the origins of structural defects in BF 2+-implanted and rapid-thermally-annealed silicon: Conditions for defect-free regrowth (1985) (40)
- Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Al ohmic contacts to n-AlGaN/GaN (2001) (40)
- The formation of a continuous amorphous layer by room .. temperature implantation of boron into silicon (1988) (39)
- PRECIPITATION OF VACANCIES IN METALS (1963) (39)
- Low‐temperature ion‐induced epitaxial growth of α‐FeSi2 and cubic FeSi2 in Si (1993) (38)
- Diffusion‐Induced Defects in Silicon. II (1967) (38)
- Radiation‐Induced Precipitation in Silicon During High‐Voltage Electron Microscope Observation (1971) (37)
- INTERSECTION CROSS SLIP (1965) (37)
- Ordering in bulk GaN : Mg samples: defects caused by Mg doping (1999) (37)
- High Resolution Observations of Copper Vacancy Ordering in Chalcocite (Cu2S) and the Transformation to Djurleite (Cu1.97 to 1.94S) (1982) (36)
- EFFECT OF INITIAL DISLOCATION DENSITY ON THE STRESS–STRAIN CURVE AND ON SURFACE INDICATION OF SLIP IN COPPER (1967) (36)
- Precipitate Colonies in Silicon (1972) (36)
- The initiation of plastic flow in copper (1964) (35)
- Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies (2001) (35)
- Electron microscopy and strength of crystals : proceedings of the first Berkeley International Materials Conference, "the impact of transmission electron microscopy on theories of the strength of crystals" held at the University of California, Berkeley, July 5-8, 1961 (1963) (35)
- Characterization of surface faceting on (110)GaAs/GaAs grown by molecular beam epitaxy (1988) (35)
- Formation of coherent twins in YBa 2 Cu 3 O 7–δ superconductors (1989) (35)
- Structural Defects in Heteroepitaxial and Homoepitaxial GaN (1995) (33)
- On the stability of the dislocation substructure in quenched aluminium (1960) (33)
- Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix (1998) (33)
- Recrystallization of buried amorphous layers and associated electrical effects in P+-implanted Si (1982) (33)
- The crystalline to amorphous transformation in silicon (1983) (32)
- A three-stage model for the development of secondary defects in ion-implanted silicon (1978) (32)
- Kinking in Zinc Single-Crystal Tension Specimens (1952) (31)
- Direct observation of dislocations in magnesium oxide (1960) (31)
- Climb kinetics of dislocation loops in aluminium (1968) (30)
- Tensile Behavior of Lithium Fluoride (1962) (29)
- Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers (1993) (29)
- Morphological transition of InAs islands on GaAs(001) upon deposition of a GaAs capping layer (1994) (28)
- Strain hardening of latent slip systems in zinc crystals (1954) (28)
- High resolution structural characterization of the amorphous‐crystalline interface in Se+‐implanted GaAs (1984) (28)
- Transmission electron microscopy of threading dislocations in ZnO films grown on sapphire (2001) (27)
- Morphology of Au/GaAs interfaces (1986) (27)
- In/GaAs reaction: Effect of an intervening oxide layer (1986) (27)
- Ternary phases in the Pd-GaAs system: Implications for shallow contacts to GaAs (1985) (27)
- Plastic Deformation of Cuprous Oxide (1968) (27)
- DIRECT DISLOCATION VELOCITY MEASUREMENT IN SILICON BY X-RAY TOPOGRAPHY (1970) (26)
- On the climb of dislocations in boron‐ion‐implanted silicon (1977) (26)
- Reduction of threading dislocation density in GaN using an intermediate temperature interlayer (2000) (26)
- Steady-state thermally annealed GaAs with room-temperature-implanted Si (1980) (25)
- Cross‐section transmission electron microscopy study of carbon‐implanted layers in silicon (1990) (25)
- Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy (1997) (25)
- Preyield Plastic Deformation in Copper Polycrystals (1969) (24)
- Stress-induced movement of twin boundaries in zinc (1967) (24)
- Stress releasing mechanisms in In0.2Ga0.8As layers grown on misoriented GaAs [001] substrate (1993) (23)
- Substitutional placement of phosphorus in ion implanted silicon by recrystallizing amorphous/crystalline interface (1983) (23)
- Defects formed from excess vacancies in aluminum (1965) (23)
- TRANSMISSION ELECTRON MICROSCOPY AND RUTHERFORD BACKSCATTERING STUDIES OF DIFFERENT DAMAGE STRUCTURES IN p+ IMPLANTED Si (1980) (22)
- Nano-Tubes in GaN (1996) (22)
- The MEVVA ion source for high current metal ion implantation (1987) (22)
- The effect of recoiled oxygen on damage regrowth and electrical properties of through-oxide implanted Si (1983) (21)
- Effect on electrical properties of segregation of implanted P+ at defect sites in Si (1980) (21)
- Damage Produced by Moving Dislocations in MgO (1962) (21)
- Convergent Beam Electron Diffraction and Transmission Electron Microscopy Study of Interfacial Defects in Gallium Nitride Homoepitaxial Films (1997) (20)
- SCHOTTKY BARRIER INSTABILITIES DUE TO CONTAMINATION (1988) (20)
- Ge/Si heterostructures grown by Sn-surfactant-mediated molecular beam epitaxy (1995) (20)
- Some new results in the characterization of defects in phosphorus ion-implanted silicon (1975) (19)
- On precipitation of phosphorous in ion implanted silicon (1972) (19)
- Study of high quality GaN grown by OMVPE using an intermediate layer (2000) (18)
- Coarsening and phase transition of FeSi2 precipitates in Si (1994) (17)
- Inversion boundaries in GaAs grown on Si (1988) (17)
- Tem/Hrem Analysis of Defects in GaN Epitaxial Layers Grown by MOVPE on SiC and Sapphire (1997) (17)
- Recrystallization of amorphous gallium arsenide by ion beams (1984) (16)
- Possible dislocation multiplication source in (001) semiconductor epitaxy (1990) (16)
- Structural analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN (2000) (16)
- The nature and habit planes of defects in P+ ion-implanted silicon (1974) (16)
- TEM Study of Defects in Laterally Overgrown GaN Layers (1998) (16)
- Comparison between structural properties of bulk GaN grown in liquid Ga under high N pressure and GaN grown by other methods (2002) (16)
- Aging of Schottky diodes formed on air-exposed and atomically clean GaAs surfaces: An electrical study (1988) (15)
- Decoration of flux pinning positions in YBa2Cu3O7−δ superconductors (1988) (15)
- Transition thickness of semiconductor heteroepitaxy (2000) (15)
- CRYSTALLOGRAPHIC RELATIONSHIPS BETWEEN GaAs, As AND Ga2O3 AT THE GaAs-THERMAL OXIDE INTERFACE (1985) (15)
- Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy (1986) (15)
- Influence of Jog Concentration on the Conservative Motion of Dislocations in Copper (1966) (15)
- Nucleation and evolution of misfit dislocations in ZnSe/GaAs (001) heterostructures grown by low‐pressure organometallic vapor phase epitaxy (1996) (15)
- On the use of convergent-beam electron diffraction for identification of antiphase boundaries in GaAs grown on Si (1988) (15)
- Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer (2001) (14)
- Structure and electrical properties of TiN/GaAs Schottky contacts (1988) (14)
- Phase Formation Sequence In The Pd-Gaas System (1985) (14)
- Stability of dislocation loops near a free surface (1972) (14)
- The formation of extrinsic-intrinsic faulting (1967) (14)
- Defect formation in epitaxial crystal growth (1991) (13)
- Pulsed electron beam induced recrystallization and damage in GaAs (1979) (13)
- On the formation of dislocation substructure during growth of a crystal from its melt (1958) (13)
- On the mechanism of the shape memory effect in Ni-Ti alloy (1976) (13)
- THE STRUCTURE OF GaAs/Si(211) HETEROEPITAXIAL LAYERS (1987) (12)
- Influence of microstructure on electrical properties of diluted GaNxAs1−x formed by nitrogen implantation (2001) (12)
- Effect of Si Doping on The Structure of Gan (1996) (12)
- Anomalies in annealed LT-GaAs samples (1993) (12)
- Interaction of Au with GaSb and its Impact on the Formation of Ohmic Contacts (1995) (12)
- Defect control during solid phase epitaxial growth of SiGe alloy layers (1993) (12)
- Structural, electrical, and optical studies of GaAs implanted with MeV As or Ga Ions (1997) (12)
- Effect of vacancy clusters on yielding and strain hardening of copper (1963) (11)
- On the possibility of nucleating loops with burgers vector (DC′) by the clustering of interstitials (1975) (11)
- Molecular beam epitaxy of InAs and its interaction with a GaAs overlayer on vicinal GaAs (001) substrates (1994) (11)
- Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions (1994) (11)
- Role of Dopants and Impurities on Pinhole Formation; Defects Formed At Ingan/Gan And AlGaN/GaN Quantum Wells (1997) (11)
- Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates (1993) (11)
- Dynamic Annealing Phenomena and the Origin of RTA-Induced “Hairpin” Dislocations (1984) (10)
- Relationship between Tc and electronegativity differences in compound superconductors (1991) (10)
- Identification of interstitial‐ and vacancy‐type dislocation loops in ion‐implanted silicon (1974) (10)
- Sequential phase formation by ion-induced epitaxy in fe-implanted si(001) (1995) (10)
- Twin formation in As precipitates in low-temperature GaAs during high-temperature annealing (1998) (10)
- Interfacial defects and morphology of InGaAs epitaxial layers grown on tilted GaAs substrates (1993) (10)
- Interface morphology and phase distribution in the Cu2−xS/CdS heterojunction: A transmission electron microscope investigation (1984) (9)
- Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts (1989) (9)
- Determination of the predominant type of stacking fault in cobalt by nuclear magnetic resonance and electron microscopy (1964) (9)
- Solid-state reaction in Pd/ZnSe thin film contacts (1995) (9)
- Effect of Thermal History on the Dislocation Substructure near the Surfaces of a Lithium Fluoride Crystal (1960) (9)
- Extrinsic-Intrinsic Stacking-Fault Pairs in Epitaxial Silicon (1963) (9)
- SOME OBSERVATIONS ON THE WORK HARDENING OF METALS FUNDAMENTAL STUDIES RELATED TO THE ORIGIN AND NATURE OF CREEP OF METALS. Technical Report 8 (1953) (8)
- Transmission electron microscopy and Rutherford backscattering studies of single and double discrete buried damage layers in P+ implanted Si on subsequent laser annealing (1981) (8)
- Nanotubes and Pinholes in GaN and their Formation Mechanism (1997) (8)
- Materials Research Society Symposia Proceedings. Volume 36. Impurity Diffusion and Gettering in Silicon Held on November 27-30, 1984 at Boston, Massachusetts, (1985) (8)
- Tem Structure Characterization Of Ti/Al and Ti/Al/Ni/Au Ohmic Contacts For n-GaN (1996) (8)
- Stability of the Work‐Hardened State in fcc Metals (1966) (8)
- Metallurgy of Al–Ni–Ge ohmic contact formation on n‐GaAs (1995) (8)
- A Field ion Microscope Investigation of 10 MeV Proton Damage in Iridium (1969) (7)
- Observations of pretransformation lattice instability in near‐equiatomic NiTi alloy (1978) (7)
- STACKING FAULTS IN QUENCHED ALUMINUM (1963) (7)
- Microstructure and optical properties of black chrome before and after exposure to high temperatures (1979) (7)
- Schottky barrier contacts on defect‐free GaAs (110) (1990) (7)
- REGROWTH BEHAVIOR OF THREE DIFFERENT DAMAGE STRUCTURES IN P+ IMPLANTED AND SUBSEQUENTLY LASER ANNEALED Si (1980) (7)
- Polarity of GaN (1998) (7)
- New Al-Ni-Ge contacts on GaAs: Their structure and electrical properties (1988) (7)
- Mechanism for nearly ohmic behavior in annealed Au/n-GaAs Schottky diodes (1989) (7)
- DISLOCATION DIPOLES IN MgO (1966) (7)
- Ion-beam-induced simultaneous epitaxial growth of α- and cubic FeSi2 in Si (100) at 320°C (1993) (6)
- Recrystallization of high energy As‐implanted GaAs studied by transmission electron microscopy (1996) (6)
- Interfacial reaction behavior of Pt, Pd, and Ni on ZnSe (1997) (6)
- Annealing of stacking-fault tetrahedra in gold (1967) (6)
- Fatigue Deformation of Magnesium Oxide (1963) (5)
- Formation and Effects of Secondary Defects in Ion implanted Silicon (1980) (5)
- Experimental Observations Concerning the Collapse of Dislocation Loops During Annealing (1956) (5)
- Nonconservative formation of 〈100〉 misfit dislocation arrays at In0.2Ga0.8As/GaAs(001) interfaces during post‐growth annealing (1993) (5)
- Phase Formation in the Pt/InP Thin Film System (1989) (5)
- Nucleation of misfit dislocations in In0.2Ga0.8As epilayers grown on GaAs substrates (1995) (5)
- Ordering in InGaAs/InAlAs layers (1993) (5)
- The Structure and Electrical Properties of Au Contacts to GaAs (1985) (5)
- INTERACTION BETWEEN PRISMATIC AND GLISSILE DISLOCATIONS (1962) (5)
- Indexing of diffracting planes using the Kikuchi pattern (1974) (5)
- TEM study of Mg-doped bulk GaN crystals (1999) (5)
- Electron microscopic studies of micro-erosion in brittle solids (1973) (5)
- Direct evidence of presence of both interstitial and vacancy dislocation loops in plastically deformed and subsequently annealed magnesium oxide (1972) (5)
- Comparison Between Ion-Beam and Thermal-Annealing Induced Solid Phase Epitaxy in Fe-Implanted Si (1993) (5)
- On the nature of the long‐term degradation of cadmium sulfide solar cells (1974) (5)
- COMPUTER SIMULATION OF THE CONTRAST OF SMALL DISLOCATION LOOPS IN FIELD-ION IMAGES OF F.C.C. CRYSTALS (1976) (4)
- Al-based thermal oxides in vertical cavity surface emitting lasers (1997) (4)
- The structure of Al/GaAs interfaces (1986) (4)
- Annealing behavior of Au(Te)/n-GaAs contacts (1993) (4)
- Structural and photoluminescence studies of Er implanted Be doped and undoped low-temperature grown GaAs (1999) (4)
- High resolution electron microscopy studies of native oxide on silicon (1983) (4)
- The role of the multi buffer layer technique on the structural quality of GaN (2000) (4)
- Atomic Scale Analysis of InGaN Multi-Quantum Wells (1999) (4)
- Effects of Al2O3 cap on the structural and electrical properties of Au/Te/Au contacts on an n‐type GaAs substrate (1993) (4)
- Structural characterization of self-organized nanostructures (1998) (4)
- Morphology of Al—Ni—Ge ohmic contacts to n-GaAs as a function of contact composition (1994) (4)
- Transmission electron microscopy and photoluminescence studies of Er implanted low-temperature grown GaAs:Be (1998) (4)
- Atomic Structure Of Grain Boundaries And Interfaces In Iiinitrides Epitaxial Systems (1997) (4)
- Effect of oxygen on chromium-structural defects interaction in ion-implanted gallium arsenide (1982) (4)
- Evolution of Cubic FeSi 2 in Si upon Thermal Annealing (1993) (3)
- Dislocation Etch Pits on {110} Planes of Magnesium Oxide (1966) (3)
- ON MeV He+ DECHANNELING FROM SECONDARY DEFECTS IN Si (1981) (3)
- Megavolt Bioron and Arsenic Implantation into Silicon (1983) (3)
- Subthreshold displacement damage in copper-aluminum alloys during electron irradiation (1976) (3)
- GROWTH OF SLIP BANDS AND THE NUCLEATION OF CRACKS IN MAGNESIUM OXIDE (1960) (3)
- High‐temperature stability of Nb/GaAs and NbN/GaAs interfaces (1988) (3)
- Mechanism of Solid State Pressure Welding Study establishes a rational basis for atom-to-atom bonding that supports neither the film theory nor the dif fusion principle (1975) (3)
- The Influence of Current Stressing on the Structure of Ag Contacts to GaAs (1987) (3)
- ON THE ORIENTATION OF PERFECT PRISMATIC DISLOCATION LOOPS IN PURE ALUMINUM (1964) (3)
- Structural characterization of encapsulated Au/Zn/Au ohmic contacts to p‐type GaAs (1993) (3)
- Effect Of Heating Rate End Annealing Temperature On Twin Formation In As+ Implanted (lll) Silicon (1984) (3)
- On the comparison of transmission electron microscopy and channeled Rutherford backscattering techniques to evaluate the multilayer subsurface damage structures (1980) (3)
- Ductile ceramics — A high temperature possibility (1958) (3)
- HETEROEPITAXY OF GaAs ON Si: METHODS TO DECREASE THE DEFECT DENSITY IN THE EPILAYER (1989) (3)
- High Resolution Observations of Copper Vacancy Ordering in Chalcocite (Cu2S) and the Transformation to Djurleite (Cu 1.97 to 1.94 S (1982) (3)
- Liquid Helium Field‐Ion Microscope for Radiation Damage Investigations (1968) (3)
- Observation of Stoichiometry Changes Beneath Metal Contacts on GaAs (1986) (3)
- Amorphization of Silicon by Boron Ion Implantation (1986) (2)
- Differences and similarities between structural properties of GaN grown by different growth methods (2002) (2)
- THE FORMATION OF AMORPHOUS SILICON BY LIGHT ION DAMAGE (1985) (2)
- Comparison of Pd/Inp and Pd/GaAs Thin-Film Systems for Device Metallization (1989) (2)
- Epitaxial Phase Formation of FeSi 2 in an Fe-Implanted Si by Ion Irradiation and Rapid Thermal Annealing (1992) (2)
- Crystal structure of kappa-In2Se3 (2002) (2)
- Oxidation Of Singular And Vicinal Surfaces Of Silicon: The Structure Of Si-Si02 Interface (1984) (2)
- HIGH-VOLTAGE ELECTRON MICROSCOPY STUDY OF SLIP BAND GROWTH IN COPPER. (1970) (2)
- Chapter 9 Structural Defects in Epitaxial III/V Layers (1993) (2)
- TRANSIENT ANNEALING OF IMPLANTED GaAs BY A PULSED ELECTRON BEAM (1980) (2)
- Mechanisms of generation and atomic structure of defects in III-nitrides epitaxial systems for device applications (1998) (1)
- FUNDAMENTAL STUDIES RELATED TO THE ORIGIN AND NATURE OF CREEP OF METALS FIFTH TECHNICAL REPORT ON RECOVERY IN SINGLE CRYSTALS OF ZINC. Technical Report No. 5 (1952) (1)
- DISLOCATION CONFIGURATIONS IN DEFORMED MAGNESIUM OXIDE (1965) (1)
- High Resolution Transmission Electron Microscopy Study of Se + Implanted and Annealed GaAs (1983) (1)
- TEM/HREM of Ti/Al and WNi/Ti/Al ohmic contacts for n-AlGaN (1998) (1)
- Damage and in-situ annealing during ion implantation (1982) (1)
- Influence of the amorphous-crystalline interface morphology on dislocation nucleation in pre-amorphized silicon (1984) (1)
- Megavolt electron irradiation induced regrowth of amorphous zones in silicon (1983) (1)
- Effect of N/Ga Flux Ratio in GaN Buffer Layer Growth by MBE on (0001) Sapphire on Defect Formation in the GaN Main Layer (1999) (1)
- TEM investigation of titanium-silicide Schottky contacts on GaAs (1985) (1)
- DEFECTS FORMED AT THE InGaAs/GaAs INTERFACE (1994) (1)
- Regrowth of Implanted–Amorphous Si (1986) (1)
- Comparison between structural properties of bulk GaN grown under high N pressure and GaN grown by other methods (2002) (1)
- TEM combined with AlxGa1−xAs As marker layers as a technique for the study of GaAs MBE growth (1985) (1)
- Transmission electron microscopy analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN (2002) (1)
- Investigation of the Interface Integrity of the Thermally Stable Wn/GaAs Schottky Contacts (1989) (1)
- Metallurgical and Electrical Properties of Capped Au-based Metallizations on GaAs (1993) (1)
- THE INFLUENCE OF POINT DEFECTS ON THE MECHANICAL PROPERTIES OF LITHIUM FLUORIDE. Technical Report No. 1 (1960) (1)
- Surface faceting of (110) GaAs: Analysis and elimination (1986) (1)
- Interaction of A1 2 O 3 -CAPPED Au/Zn/Au and Au/Te/Au Contacts With (001)GaAs Substrates (1992) (1)
- A macro-resonance-cell description for high-Tc oxide superconductors (1989) (1)
- Chemical and structural characterization of thermally degraded black chrome (1980) (1)
- Structural characterization of thin Ni films deposited on (001) ZnSe (1997) (1)
- DISLOCATION SUBSTRUCTURES IN DEFORMED AND RECOVERED MOLYBDENUM (1961) (1)
- The atomic structure of Si‐SiO2 interfaces suggesting a ledge mechanism of silicon oxidation (1984) (1)
- CLUSTERING OF VACANCIES AND HARDENING (1963) (1)
- Effect of stoichiometry on defect distribution in cubic GaN grown on GaAs by plasma-assisted MBE (1996) (1)
- Erratum: Structure and Origin of Stacking Faults in Epitaxial Silicon (1963) (1)
- Screw Dislocations in GaN (2002) (1)
- Reorientation of Misfit Dislocations During Annealing in InGaAs/GaAs(001) Interfaces (1993) (1)
- Suppression of Defect Propagation in Heteroepitaxial Structures by Strained Layer Superlattices (1989) (0)
- Crystal defects in silicon solar cells—II. Transmission electron microscopy (1963) (0)
- ROD-LIKE DEFECTS IN ION IMPLANTED SILICON (2013) (0)
- Effects Of Damage-Impurity Interaction On Electrical Properties of Se+-Implanted GaAs (1980) (0)
- Effects of structural defects on the activation of sulfur donors in GaNxAs1−x formed by N implantation (2001) (0)
- FUNDAMENTAL STUDIES RELATED TO THE ORIGIN AND NATUftE OF CREEP OF METALS Eleventh Technical Report Effect of the Structure of Dislocation Boundries on Yield Strength (2009) (0)
- STRUCTURE AND RELIABILITY OF METAL CONTACTS TO GaAs (1991) (0)
- Screw Dislocations in MBE GaN Layers Grown on Top of HVPE Layers: Are They Different? (2002) (0)
- Research on Cu/sub x/S/(Cd,Zn)S photovoltaic solar energy converters. Final report, March 1977-September 1979 (1980) (0)
- Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin AlxGa1-xN Layers Grown by MOCVD. (1999) (0)
- High Resolution Study of the Relationship Between Misfit Accommodation and Growth of CU 2-x S in Cds (1983) (0)
- A Macro-Resonance-Cell Description for High-T{sub c} Oxide A Macro-Resonance-Cell Description for High-C{sub c} Oxide Superconductors (2017) (0)
- Structure and Electronic Properties of Misfit Dislocations in ZnSe/GaAs(001) Heterojunctions (1994) (0)
- Lattice imaging of antiphase boundaries in GaAs grown on Si (1988) (0)
- TEM combined with Al/sub x/Ga/sub 1-x/ as marker layers as a technique for the study of GaAs MBE growth (1985) (0)
- ON THE STABILITY OF THE WORK HARDENED STATE (1966) (0)
- TEM investigation of polar-on-nonpolar epitaxy: GaAs-AlGaAs on (100) Ge (1984) (0)
- DIRECT EVIDENCE OF Cr-STRUCTURAL DEFECT-OXYGEN INTERACTION IN ION-IMPLANTED GaAs (1981) (0)
- Thin film alloys on semiconductor substrates (1990) (0)
- A COOPERATIVE GLIDE THEORY OF YIELDING AND SLIP BAND FORMATION (1966) (0)
- HIGH RESOLUTION STUDY OF THE CHALCOCITE (Cu2S)-DJURLEITE (Cu1.97S) TRANSFORMATION IN Cu2-xS THIN FILMS (1982) (0)
- High resolution TEM studies of defects near Si-SiO/sub 2 interface (1983) (0)
- , Formation of Coherent Twins in YB~Cu 3 0 7 _ 0 Superconductors (2013) (0)
- Boron precipitates in ion implanted silicon (1975) (0)
- Transmission electron microscopy analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN (Eighth Conference on Frontiers of Electron Microscopy in Materials Science) (2002) (0)
- TEM studies of P/sup +/ implanted and subsequently laser annealed Si (1979) (0)
- Twinning of As precipitates in low-temperature GaAs during high temperature annealing (1998) (0)
- Structure of the Si-GaAs Interface: Polar on Nonpolar Epitaxy (1985) (0)
- ON THE NATURE OF THE DISLOCATION SUB-STRUCTURE IN DEFORMED COPPER (1962) (0)
- Electrical and Structural Properties of Ti Contacts on an Atomically Clean N-Type GaAs Surface (1992) (0)
- MIJ-NSR Volume 1, Article 42 (1998) (0)
- High-resolution study of the chalcocite (Cu/sub 2/S)-djurleite (Cu/sub 1 97/S) transformation in Cu/sub 2-x/S thin films (1982) (0)
- Reducing Dislocation Density by Sequential Implantation of Ge and C in Si (1993) (0)
- Compositional nonuniformities and strain relaxation at misoriented InxGa(1−x)As/GaAs interfaces (1993) (0)
- Impurity diffusion and gettering in silicon : symposium held November 27-30, 1984, Boston, Massachusetts, U.S.A. (1985) (0)
- Summary Abstract: Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy (1986) (0)
- Some considerations in the splitting of interstitial frank loops formed by irradiation (1975) (0)
- Investigation of the Interface of the Thermally Stable WN/GaAs Schottky Contacts (1989) (0)
- Effect of the doping and the Al content on the microstructure and morphology of thin Al{sub x}Ga{sub 1{minus}x}N layers grown by MOCVD[Metal Organic Chemical Vapor Deposition] (2000) (0)
- ON THE MECHANISM OF MARTENSITE TRANSFORMATION IN NEAR EQUIATOMIC NiTi ALLOY (1977) (0)
- Lawrence Berkeley National Laboratory Recent Work Title Defect Formation in Epitaxial Crystal Growth Permalink (2013) (0)
- ANNEALING OF INTERSTITIAL LOOPS IN ARSENIC IMPLANTED SILICON (1983) (0)
- EFFECTS OF IMPURITIES AND IMPERFECTIONS ON MECHANICAL PROPERTIES OF METALS. TECHNICAL REPORT NO. 13 (1954) (0)
- Materials study of silicon-on-lnsulator material by TEM (1991) (0)
- HIGH RESOLUTION OBSERVATIONS OF COPPER VACANCY ORDERING IN CHALCOCITE ( Cu 2 S ) AND THE TRANSFORMATION TO DJURLEITE ( Cu 1 97194 S ) (2012) (0)
- Lawrence Berkeley National Laboratory Recent Work Title Defect Formation in Epitaxial Crystal Growth Permalink (2013) (0)
- TENSILE BEHAVIOR OF LITHIUM FLUORIDE. Fourth Technical Report (1961) (0)
- Characterization Of Single Crystal Cu2S/CdS Heterojunctions By High Resolution Electron Microscopy (1984) (0)
- CLIMB OF 1/3 DISLOCATIONS IN GOLD (1969) (0)
- THE MEASUREMENT OF THE ABSOLUTE ENERGY OF LOW ANGLE DISLOCATION BOUNDARIES IN ZINC (1956) (0)
- Interaction of prismatic and glissile dislocations (1962) (0)
- Structural and photoluminescence analysis of Er implanted LT-GaAs (1998) (0)
- Materials and Molecular Research Division annual report 1975. [Summaries of research activities at Lawrence Berkeley Laboratory, University of California] (1975) (0)
- Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin AlxGa1−xN Layers Grown by MOCVD (2000) (0)
- PLASTIC DEFORMATION OP CUPROUS OXIDE (1967) (0)
- DIRECT OBSERVATION OF RADIATION INDUCED PRECIPITATION IN HIGH VOLTAGE ELECTRON MICROSCOPE (1975) (0)
- DIRECT OBSERVATIONS OF DISLOCATION CLIMB (1972) (0)
- Correlation Between the Microstructures and the Electrical Properties of Ni/Au/Te/Au Contacts on n-GaAs (1994) (0)
- FUNDAMENTAL STUDIES RELATED TO THE ORIGIN AND NATURE OF CREEP OF METALS SIXTH TECHNICAL REPORT ON EFFECT OF STRESS ON INITIAL CREEP RATE OF ZINC SINGLE CRYSTALS (1952) (0)
- EFFECT OF INITIAL DISLOCATION DENSITY ON SINGLE SLIP STRAIN HARDENING OF COPPER (1967) (0)
- DIFFUSION INDUCED DEFECTS IN TRANSISTORS - PART II (1966) (0)
- Dislocation core in GaN (2002) (0)
- Mg Segregation, Difficulties of P-Doping in GaN (1999) (0)
- DUCTILE CERAMICS RESEARCH. Final Report (1962) (0)
- Center for Advanced Materials, Annual Report, 1989, Electronic Materials (1990) (0)
- Thin Film Ag/YBCO Multistructures for Metal Contact Applications (1992) (0)
- Structural and Photoluminescence Studies of Er Implanted Lt-GaAs:Be (1998) (0)
- OXYGEN VACANCIES AND TWIN BOUNDARIES IN YBA[SUB]2 CU[SUB]3 O[SUB]7-DELTA SUPERCONDUCTORS (1988) (0)
- Recent results on (Cd,Zn)S single-crystal film growth and Cu/sub x/S-(Cd, Zn)S heterojunctions (1977) (0)
- Electron microscopy of reactions on compound semiconductor surfaces (1985) (0)
- LOW TEMPERATURE CREEP OF ZINC SINGLE CRYSTALS (1954) (0)
- Dislocations in Semiconductors: Glide and Climb (2001) (0)
- Low ‐ temperature ion ‐ induced epitaxial growth of α ‐ FeSi 2 and cubic FeSi 2 in (2016) (0)
- Characterization of RF sputtered ZnO piezoelectric films using transmission electron microscope (1975) (0)
- On the dynamic nature of microscopy specimens at lattice resolution (1989) (0)
- Transient annealing of GaAs by electron and laser beams (1979) (0)
- Investigation of misfit dislocation configurations in MBE-grown InGaAs layers on misaligned GaAs (001) substrates (1992) (0)
- TEM AND RBS STUDIES OF SINGLE AND DOUBLE DISCRETE BURIED DAMAGE LAYERS IN P+-IMPLANTED Si ON SUBSEQUENT LASER ANNEALING (1980) (0)
- FUNDAMENTAL STUDIES RELATED TO THE ORIGIN AND NATURE OF CREEP OF METALS. TECHNICAL REPORT NO. 10. STRAIN HARDENING OF LATENT SLIP SYSTEM IN ZINC CRYSTALS (1954) (0)
- Cu/sub x/S-(Cd,Zn)S photovoltaic solar energy converters. Quarterly report No. 2, July--September 1977 (1977) (0)
- TEM Study of High Quality GaN Grown by OMVPE Using an Intermediate Layer (2000) (0)
- Influence of Mg and In on defect formation in GaN: bulk and MOCVD grown samples (2000) (0)
- A correlation between T(sub 3) and electronegativity difference in high-temperature superconductors (1990) (0)
- DEFORMATION PROCESSES IN MATERIALS. Final Report (1962) (0)
- Atomic Structure of Twinned As Precipitates in Lt-GaAs (1998) (0)
- Lawrence Berkeley National Laboratory Recent Work Title Investigation of Misfit Dislocation Configurations in MBE-Grown InGaAs Layers on Misaligned GAAs ( 001 ) Substrates Permalink (2013) (0)
- A RAPID METHOD FOR DISTINGUISHING VACANCY AND INTERSTITIAL LOOPS IN ION IMPLANTED CRYSTALS (1972) (0)
- Origins of structural defects in BF/sub 2//sup +/-implanted and rapid-thermally-annealed silicon: conditions for defect-free regrowth (1984) (0)
- DEFORMATION PROCESSES IN MATERIALS. PART I. FACTORS AFFECTING THE INITIATION OF PLASTIC FLOW IN METALS. PART II. SUMMARY STATEMENT OF OBJECTIVES AND ACCOMPLISHMENTS (1962) (0)
- Tem/Hrem Structural Characterization of Directionally Solidified Gaas-Cras Eutectic Crystals (1995) (0)
- CLIMB OF PRISMATIC LOOPS IN Cu-Al ALLOYS DURING IRRADIATION IN THE HVEM (1975) (0)
- DUCTILE CERAMICS RESEARCH (1962) (0)
- MOBILITY OF PRISMATIC DISLOCATION HALF-LOOPS IN COPPER (1971) (0)
- Crystal structure of κ-In 2 Se (2002) (0)
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What Schools Are Affiliated With Jack. Washburn?
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