James F. Gibbons

Q: What Schools Are Affiliated With James F. Gibbons

James F. Gibbons is affiliated with the following schools: University of California, Berkeley, Northwestern University, Stanford University

James F. Gibbons's AcademicInfluence.com Rankings

James F. Gibbons

Physics

#3879

World Rank

#5425

Historical Rank

#1354

USA Rank

physics Degrees

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Physics

James F. Gibbons's Degrees

PhD Physics Stanford University
Masters Physics Stanford University
Bachelors Physics Stanford University

Why Is James F. Gibbons Influential?

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According to Wikipedia, James F. Gibbons is an American electrical engineer and academic administrator. He is credited with starting the semiconductor device fabrication laboratory at Stanford University that enabled the semiconductor industry and created Silicon Valley.

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James F. Gibbons's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Ion implantation in semiconductors—Part II: Damage production and annealing (1972) (632)
Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method (2004) (475)
Switching properties of thin Nio films (1964) (458)
Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors (1996) (440)
Ultra-high-yield growth of vertical single-walled carbon nanotubes: Hidden roles of hydrogen and oxygen. (2005) (406)
Electron mobility enhancement in strained-Si n-type metal-oxide-semiconductor field-effect transistors (1994) (362)
Fabrication and analysis of deep submicron strained-Si n-MOSFET's (2000) (355)
Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beam (1980) (254)
Stoichiometric disturbances in ion implanted compound semiconductors (1981) (231)
cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties (1978) (201)
Ion implantation in semiconductors—Part I: Range distribution theory and experiments (1968) (200)
Projected range statistics: Semiconductors and related materials (1975) (195)
Limited reaction processing: Silicon epitaxy (1985) (186)
Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and model (1984) (171)
Strain dependence of the performance enhancement in strained-Si n-MOSFETs (1994) (157)
Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing (1989) (153)
Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors (1989) (153)
Physical and electrical properties of laser‐annealed ion‐implanted silicon (1978) (152)
Estimation of impurity profiles in ion‐implanted amorphous targets using joined half‐Gaussian distributions (1973) (151)
Epitaxial regrowth of intrinsic, 31P‐doped and compensated (31P+11B‐doped) amorphous Si (1982) (129)
NMOS and PMOS transistors fabricated in strained silicon/relaxed silicon-germanium structures (1992) (121)
An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targets (1980) (116)
The solid solubility and thermal behavior of metastable concentrations of As in Si (1980) (116)
Tutored videotape instruction: a new use of electronics media in education. (1977) (114)
One-gate-wide CMOS Inverter on laser-recrystallized polysilicon (1980) (112)
Displacement criterion for amorphization of silicon during ion implantation (1981) (107)
Thin film MOSFET's fabricated in laser-annealed polycrystalline silicon (1979) (105)
Enhanced hole mobilities in surface-channel strained-Si p-MOSFETs (1995) (105)
A laser‐scanning apparatus for annealing of ion‐implantation damage in semiconductors (1978) (105)
Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areas (1990) (102)
Measurement of high-field carrier drift velocities in silicon by a time-of-flight technique (1967) (98)
Effects of strain on boron diffusion in Si and Si1−xGex (1995) (97)
Constant‐capacitance DLTS measurement of defect‐density profiles in semiconductors (1979) (86)
Diffusion and electrical properties of silicon‐doped gallium arsenide (1985) (86)
Transconductance enhancement in deep submicron strained Si n-MOSFETs (1998) (85)
Solid solubility of As in Si as determined by ion implantation and cw laser annealing (1979) (82)
Comparison of boron diffusion in Si and strained Si1-xGex epitaxial layers (1993) (80)
Transistors and Active Circuits (1961) (78)
Enhanced diffusion in Si and Ge by light ion implantation (1972) (77)
A 14% efficient nonaqueous semiconductor/liquid junction solar cell (1984) (77)
The use of beam shaping to achieve large-grain cw laser-recrystallized polysilicon on amorphous substrates (1981) (71)
Projected range statistics. Semiconductors and related materials. 2nd edition (1975) (70)
cw laser recrystallization of 〈100〉 Si on amorphous substrates (1979) (68)
Recoil range distributions in multilayered targets (1981) (67)
Computer modeling of the temperature rise and carrier concentration induced in silicon by nanosecond laser pulses (1982) (65)
Small-geometry, high-performance, Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors (1989) (60)
Substitutional carbon incorporation in epitaxial Si1−yCy layers grown by chemical vapor deposition (1997) (59)
DIFFUSIVITY OF ELECTRONS AND HOLES IN SILICON (1969) (58)
Growth of GeSi/Si strained‐layer superlattices using limited reaction processing (1987) (57)
Scanning‐electron‐beam annealing of arsenic‐implanted silicon (1979) (56)
Observation of phosphorus pile‐up at the SiO2‐Si interface (1978) (55)
Limited reaction processing: Growth of Si1-xGex/Si for heterojunction bipolar transistor applications (1990) (54)
Arc lamp zone melting and recrystallization of Si films on oxidized silicon substrates (1982) (54)
Calculation of carrier and lattice temperatures induced in Si by picosecond laser pulses (1982) (53)
Laser and electron-beam solid interactions and materials processing : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A. (1981) (49)
Properties of ion implanted silicon, sulfur, and carbon in gallium arsenide (1970) (49)
Use of a scanning cw Kr laser to obtain diffusion-free annealing of B-implanted silicon (1978) (48)
A monolithic integrated circuit fabricated in laser-annealed polysilicon (1980) (47)
Silicon-on-insulator m.o.s.f.e.t.s fabricated on laser-annealed polysilicon on SiO2 (1979) (46)
Open‐tube Zn diffusion in GaAs using diethylzinc and trimethylarsenic: Experiment and model (1988) (44)
Growth of GaAs by metalorganic chemical vapor deposition using thermally decomposed trimethylarsenic (1987) (44)
Periodic Dependence of the Electronic Stopping Cross Section for Energetic Heavy Ions in Solids (1968) (44)
Admittance spectroscopy measurements of band offsets in Si/Si1−xGex/Si heterostructures (1992) (43)
n-Type silicon photoelectrochemistry in methanol: Design of a 10.1% efficient semiconductor/liquid junction solar cell. (1983) (41)
Metastable As‐concentrations in Si achieved by ion implantation and rapid thermal annealing (1981) (40)
Thin, highly doped layers of epitaxial silicon deposited by limited reaction processing (1986) (39)
Impurity distribution profiles in ion-implanted silicon (1968) (38)
Electronic defect levels in self‐implanted cw laser‐annealed silicon (1979) (37)
A critique of the theory of p-n-p-n devices (1964) (36)
Damage calculation and measurement for GaAs amorphized by Si implantation (1986) (36)
ION‐BOMBARDMENT‐ENHANCED ETCHING OF SILICON (1969) (35)
Electrical and material quality of Si/sub 1-x/Ge/sub x//Si p-N heterojunctions produced by limited reaction processing (1989) (35)
A lateral silicon-on-insulator bipolar transistor with a self-aligned base contact (1987) (35)
Stoichiometric disturbances in ion implanted GaAs and redistribution of Cr during annealing (1981) (34)
Ion‐implanted selenium profiles in GaAs as measured by secondary ion mass spectrometry (1978) (34)
Multilayered encapsulation of GaAs (1978) (33)
Electronic Properties of As‐ and P‐Implanted Cadmium Telluride (1980) (33)
Growth of alternating 〈100〉/〈111〉‐oriented II‐VI regions for quasi‐phase‐matched nonlinear optical devices on GaAs substrates (1994) (33)
Physical Principles of Avalanche Transistor Pulse Circuits (1959) (33)
Boron Diffusion in Si and Si 1−x Ge x (1995) (32)
Rapid thermal annealing of Si‐implanted GaAs with trimethylarsenic overpressure (1987) (32)
Effect of oxygen on minority‐carrier lifetime and recombination currents in Si1−xGex heterostructure devices (1991) (32)
Thermal stability of Si/Si1−xGex/Si heterojunction bipolar transistor structures grown by limited reaction processing (1989) (32)
Calculation of solid‐phase reaction rates induced by a scanning cw laser (1980) (32)
Silicide formation using a scanning cw laser beam (1980) (31)
RADIATION-ENHANCED DIFFUSION OF BORON IN SILICON. (1969) (31)
Capacitance-Voltage Characteristics of p-Si/SiGeC Mos Capacitors (1995) (30)
Photovoltaic properties of CdTe p‐n junctions produced by ion implantation (1978) (29)
Low-frequency noise figure and its application to the measurement of certain transistor parameters (1962) (27)
Measurement of the conduction band offsets in Si/Si1−x−yGexCy and Si/Si1−yCy heterostructures using metal-oxide-semiconductor capacitors (1999) (27)
A double‐layered encapsulant for annealing ion‐implanted GaAs up to 1100 °C (1977) (26)
IMPLANTATION PROFILES FOR 40-kev PHOSPHORUS IONS IN SILICON SINGLE-CRYSTAL SUBSTRATES (1966) (26)
Effects of Si thermal oxidation on B diffusion in Si and strained Si1−xGex layers (1995) (26)
Rapid Thermal Annealing of As in Si (1985) (26)
Evaluation of the valence band discontinuity of Si/Si/sub 1-x/Ge/sub x//Si heterostructures by application of admittance spectroscopy to MOS capacitors (1998) (26)
A STUDY OF DIFFUSED LAYERS OF ARSENIC AND ANTIMONY IN SILICON USING THE ION‐SCATTERING TECHNIQUE (1970) (26)
Deep levels in scanned electron‐beam annealed silicon (1980) (25)
The rate of cw laser induced solid phase epitaxial regrowth of amorphous silicon (1981) (25)
A study of the mechanism of cw laser annealing of arsenic‐implanted silicon (1979) (25)
Metastable 75As concentrations formed by scanned cw e‐beam annealing of 75As‐implanted silicon (1979) (25)
Epitaxial alignment of arsenic implanted polycrystalline silicon films on 〈100〉 silicon obtained by rapid thermal annealing (1987) (25)
Thermal pulse annealing of boron‐implanted HgCdTe (1982) (25)
Limited reaction processing: Growth of III‐V epitaxial layers by rapid thermal metalorganic chemical vapor deposition (1986) (25)
Minority‐carrier properties of thin epitaxial silicon films fabricated by limited reaction processing (1986) (25)
Charges at a laser-recrystallized-polycrystalline-silicon/insulator interface (1980) (24)
Ring oscillators fabricated in laser-annealed silicon-on-insulator (1980) (23)
Crystal structure and thermal oxidation of laser‐recrystallized polycrystalline silicon (1980) (23)
Solid‐phase epitaxial regrowth of ion‐implanted layers in GaAs (1981) (23)
The effect of free‐carrier absorption on the annealing of ion‐implanted silicon by pulsed lasers (1979) (22)
Calculation of Channeling Effects During Ion Implantation Using the Boltzmann Transport Equation (1985) (22)
Comparison of Si/Si1−x−yGexCy and Si/Si1−yCy heterojunctions grown by rapid thermal chemical vapor deposition (1998) (22)
Defect luminescence in cw laser‐annealed silicon (1979) (22)
Electron‐beam‐induced current investigations of cw laser‐annealed silicon (1980) (22)
Resistivity reduction in heavily doped polycrystalline silicon using cw‐laser and pulsed‐laser annealing (1981) (21)
A multiple pass application of the Boltzmann transport equation for calculating ion implantation profiles at low energies (1983) (21)
The doping of semiconductors by ion bombardment (1965) (21)
Admittance spectroscopy analysis of the conduction band offsets in Si/Si1−x−yGexCy and Si/Si1−yCy heterostructures (1999) (21)
Lateral Uniformity of n+/p Junctions Formed by Arsenic Diffusion from Epitaxially Aligned Polycrystalline Silicon on Silicon (1988) (20)
Accelerated Active Life Test of GaAs FET and a New Failure Mode (1980) (19)
Ion‐implanted Se in GaAs (1980) (19)
Lateral Epitaxial Recrystallization of Deposited Silicon Films on Silicon Dioxide (1981) (19)
Limited reaction processing: In-situ metal—oxide—semiconductor capacitors (1986) (19)
The effects of degeneracy on doping efficiency for n−type implants in GaAs (1975) (18)
CONDUCTIVITY AND HALL MOBILITY OF ION‐IMPLANTED SILICON IN SEMI‐INSULATING GALLIUM ARSENIDE (1969) (18)
Recoil oxygen implants and thermal redistribution of oxygen in through‐oxide arsenic‐implanted Si (1981) (18)
Solid solubility of selenium in GaAs as measured by secondary ion mass spectrometry (1978) (18)
Temperature rise induced in Si by continuous xenon arc lamp radiation (1982) (18)
Papers on carrier drift velocities in silicon at high electric field strengths (1967) (17)
In-situ epitaxial silicon—oxide-doped polysilicon structures for MOS field-effect transistors (1986) (17)
Electrical characterization of in-situ epitaxially grown Si p-n junctions fabricated using limited reaction processing (1988) (17)
Study of the enhanced solubility and lattice location of gold impurities in a heavily phosphorus−diffused layer of silicon (1975) (16)
Ion implantation of sulfur in Cr-doped InP at room temperature (1980) (16)
Analysis of ion implanted diamond (1971) (15)
Fast diffusion of elevated‐temperature ion‐implanted Se in GaAs as measured by secondary ion mass spectrometry (1978) (15)
MOS measurement of oxygen recoils from As implantation into silicon dioxide (1976) (15)
Annealing of Hg1−xCdxTe: Hg loss rates and annealing of ion implantation damage (1983) (15)
STATISTICAL RANGE DISTRIBUTION OF IONS IN SINGLE AND MULTIPLE ELEMENT SUBSTRATES (1966) (15)
Metal–oxide–semiconductor capacitance–voltage characteristics and band offsets for Si1−yCy/Si heterostructures (1998) (15)
New model for boron diffusion in silicon (1976) (15)
Oxidation kinetics of laser formed MoSi2 on polycrystalline silicon (1983) (14)
cw laser assisted diffusion and activation of tin in GaAs from a SnO2/SiO2 source (1981) (14)
Two‐Dimensional Ion Implantation Profiles from One‐Dimensional Projections (1985) (14)
Investigation of the oxidation properties of cw laser formed WSi2 (1982) (14)
Secondary ion mass spectrometry of hyper-abrupt doping transitions fabricated by limited reaction processing (1987) (14)
Control of implant-damage-enhanced boron diffusion in epitaxially grown n-Si/p-Si1-xGex/n-Si heterojunction bipolar transistors (1995) (14)
The effect of oxygen on the thermal stability of Si1−xGex strained layers (1991) (14)
Precipitation of impurities in GaAs amorphized by ion implantation (1988) (13)
Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors fabricated by limited reaction processing (1988) (13)
An Analysis of the Modes of Operation of a Simple Transistor Oscillator (1961) (13)
Stacked MOSFET's in a single film of laser-recrystallized PolySilicon (1982) (13)
A three-dimensional folded dynamic RAM in beam-recrystallized polysilicon (1984) (13)
(Invited) Applications of Scanning CW Lasers and Electron Beams in Silicon Technology (1980) (13)
Computer Aided Design of Integrated Circuit Fabrication Processes for VLSI Devices (1981) (13)
LASER-INDUCED EXPLOSIVE RADIAL CRYSTALLIZATION OF DEPOSITED Ge AND Si THIN FILMS (1980) (13)
High frequency Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors (1989) (12)
Characterization of p-N Si/sub 1-x/Ge/sub x//Si heterojunctions grown by limited reaction processing (1988) (12)
Growth of GeSi/Si Strained-layer Superlattices Using Limited Reaction Processing (1986) (12)
Interface charges beneath laser-annealed insulators on silicon (1980) (12)
Historical perspectives on ion implantation (1987) (12)
Thermal diffusion of tin in GaAs from a spin‐on SnO2/SiO2 source (1980) (11)
Graphical analysis of the I-V characteristics of generalized p-n-p-n devices (1967) (11)
7.2% efficient polycrystalline silicon photoelectrode (1984) (11)
Correlation of the Photoelectrochemistry of the Amorphous Hydrogenated Silicon/Methanol Interface with Bulk Semiconductor Properties (1984) (11)
Use of Rutherford backscattering and channeling in the study of (Hg,Cd)Te (1982) (10)
Thermal Pulse Diffusion of Zn in GaAs from an Elemental Source (1984) (10)
cw laser annealing of Nb3Al and Nb3Si (1981) (10)
Electronic Defects in Silicon after Transient Isothermal Annealing (1983) (10)
Acceptor profiles obtained by diffusive redistribution of implanted impurities during annealing (1973) (10)
Use of Transistor-Simulated Inductance as an Interstate Element in Broadband Amplifiers (1968) (10)
Tutored Videotape Instruction. (1977) (9)
Resistivity changes in laser‐annealed polycrystalline silicon during thermal annealing (1979) (9)
Effects of impurities on the oxidation of MoSi2 on silicon (1984) (9)
Dependence of misfit dislocation velocities upon growth technique and oxygen content in strained GexSi1-x/Si(100) heterostructures (1991) (9)
Vertical bipolar transistors in laser-recrystallized polysilicon (1985) (9)
Electrical and structural properties of diodes fabricated in thick, selectively deposited Si/Si/sub 1-x/Ge/sub x/ epitaxial layers (1992) (9)
Monolayer surface doping of GaAs from a plated zinc source (1984) (8)
Electrical characteristics of diodes fabricated in selective Si/Si1−xGex epitaxial layers (1992) (8)
Rapid annealing of silicon with a scanning cw Hg lamp (1982) (8)
Range-Energy Relations for Protons in Heavy Substrates (1973) (8)
Epitaxial Growth of Si l-x Ge x /Si Heterostructures by Limited Reaction Processing for Minority Carrier Device Applications (1989) (8)
Chapter 10 – Solid Phase Regrowth (1982) (8)
Measurement and reduction of interface states at the recrystallized silicon‐underlying insulator interface (1985) (8)
USE OF CHARACTERISTIC X RAYS TO MONITOR ANNEALING OF ION‐IMPLANTED DIAMOND (1969) (7)
Control of zinc diffusivity in GaAs0.6P0.4 by multiple implantation (1977) (7)
On the effectiveness of dislocation loops as sites for the adsorption of implanted ions (1970) (7)
Deep levels and impurities at growth‐interrupted interfaces: Temperature‐ and gas‐switched metalorganic chemical vapor deposition of GaAs with tertiarybutylarsenic (1990) (7)
Regrowth of Amorphized Compound Semiconductors (1985) (7)
CW LASER-INDUCED REACTIONS FOR SILICIDE FORMATION (1980) (7)
Computer-Aided Engineering of Semiconductor Integrated Circuits. (1978) (6)
A folding principle for generating three-dimensional MOSFET device structures in beam-recrystallized polysilicon films (1982) (6)
Limited Reaction Processing of Silicon: Oxidation and Epitaxy (1985) (6)
High‐temperature scanning cw laser‐induced diffusion of arsenic and phosphorus in silicon (1980) (6)
Rutherford backscattering analysis of thermal-pulse annealed Hg1−xCdxTe (1983) (6)
Onset of Misfit Dislocation Generation in As-Grown and Annealed Sil-XGex/Si Films (1988) (6)
LPE Growth of Silicon from Poly Si/Si Structure Using CW Argon Laser (1981) (6)
Characteristics of Surface-Channel Strained Si 1-y C y n -MOSFETS (1998) (6)
Electrical Characterization of Polysilicon-to-Silicon Interfaces (1987) (6)
Theory of transient build-up in avalanche transistors (1959) (6)
Computation of Third Central Moments for Projected Range Distributions of Common Ion-Implanted Dopants in Silicon (1973) (6)
Beam Processing of Silicon With a Scanning CW Hg Lamp (1982) (6)
Hg loss rate limitation in HgCdTe thermal processing (1985) (6)
Thin Single Crystal Silicon on Oxide by Lateral Solid Phase Epitaxy of Amorphous Silicon and Silicon Germanium (2000) (5)
Evidence of real-space hot-electron transfer in high mobility, strained-Si multilayer MOSFETs (1993) (5)
Effective gettering of gold in silicon at 900 °C by low‐current corona discharge (1985) (5)
Electrical activation of beryllium in preamorphized gallium arsenide (1990) (5)
OBSERVATION OF LOCALIZED RADIATION DAMAGE IN SILICON. (1969) (5)
Threshold current for p-n junction lasers (1963) (5)
Limited Reaction Processing: Silicon and III–V Materials (1987) (5)
The Depth Resolution of Dynamic Sims: Experiments and Calculations (1986) (5)
Silver recoil yield resulting from krypton implantation (1981) (5)
Limited Reaction Processing (1986) (4)
Temperature and scaling behavior of Strained-Si N-MOSFETs (1993) (4)
Reduced Process Sensitivity of Polysilicon Emitter Contacts for VLSI Bipolar Transistors (1987) (4)
A COMPARISON OF ION-IMPLANTATION-INDUCED DEEP LEVELS IN SCANNED ELECTRON-BEAM-ANNEALED AND CW LASER-ANNEALED SILICON (1980) (4)
Growth and Processing of Relaxed Si1-xGex/Strained Si Structures for MOS Applications (1993) (4)
Effect of band alignment and density of states on the collector current in p-Si/n-Si/sub 1-y/C/sub y//p-Si HBTs (2003) (4)
cw‐laser annealed solar cells (1982) (4)
Nonalloyed ohmic contacts to n-GaAs by CW laser-assisted diffusion from a SnO2/SiO2source (1981) (3)
Impurity Redistribution Studies on Laser-Formed Silicides (1982) (3)
Chapter 3 Applications of CW Beam Processing to Ion Implanted Crystalline Silicon (1984) (3)
Chapter 7 CW Beam Processing of Gallium Arsenide (1984) (3)
Cw Laser-Recrystallized Polysilicon as A Device-Worthy Material (1980) (3)
Diffusion of Si in GaAs From a Thin Si Film by Pulsed Laser Irradiation (1981) (3)
Epitaxial Growth And Electronic Characterization Of Carboncontaining Silicon-Based Heterostructures (1998) (3)
Importance of inter-valley phonon scattering on mobility enhancement in strained Si MOSFETs (1996) (3)
Amorphous‐crystalline transition of arsenic‐implanted silicon caused by multiple‐pulsed ruby laser (1979) (3)
Application of limited reaction processing to atomic layer epitaxy: Growth of cadmium telluride using diisopropyl telluride and dimethyl cadmium (1994) (3)
Thermal annealing of microcracks produced by backside laser irradiation of silicon (1982) (3)
The Effect of Oxygen on the Thermal Stability of Si 1−x Ge x Strained Layers Grown by Limited Reaction Processing (1991) (3)
Device Applications of Rapid Thermal Processing (1983) (3)
Calculation of Carrier and Lattice Temperatures Induced in Si and GaAs By Picosecond Laser Pulses (1981) (3)
Abrupt Phosphorus Profiles in Si Effects of Temperature and Substitutional Carbon on Phosphorus Autodoping (2003) (3)
Line-source E beam crystallization of Si on silicon nitride layers (1981) (3)
The Effects of Non-Gaussian Range Statistics on Energy Deposition Profiles (1975) (3)
TP-A5 nonalloyed ohmic contacts to n-GaAs by CW laser-assisted diffusion from a SnO 2 /SiO 2 source (1980) (2)
Computer Model of the Temperature and Carrier Concentration Induced in Si by Nanosecond and Picosecond Laser Pulses (1980) (2)
MODELLING OF SOLID-PHASE THIN-FILM REACTIONS INDUCED BY A SCANNING CW LASER (1980) (2)
BOOK AND FILM REVIEWS: Physical Electronics and Circuit Models of Transistors (1966) (2)
Application of the Boltzmann Transport Equation to Ion Implantation in Semiconductors and Multilayer Targets (1984) (2)
Hot electron studies of lattice damage created in silicon by implantation of 2.8 MeV protons (1970) (2)
Orientation Patterning of II-VI Semiconductor Films for Quasi-phasematched Nonlinear Devices (1993) (2)
Electrical breakdown phenomena in gold-doped silicon (1962) (2)
Surface Temperatures Produced In Silicon Using Large Diameter Scanning Cw Sources (1981) (2)
Application of the Boltzmann Transport Equation to the Calculation of Range Profiles and Recoil Implantation in Multilayered Media (1977) (2)
The Effects of Ion-Implanted Ga, As, and P on the Subsequent Diffusion of Ion-Implanted Zn in GaAs0.6P0.4 (1975) (2)
Thermal Pulse Annealing of Hg 1−x Cd x Te (1982) (2)
A seeded-channel silicon-on-insulator (SOI) MOS technology (1985) (2)
A Theoretical Approach to the Calculation of Impurity Profiles for Annealed, Ion Implanted B in Si (1977) (2)
Chapter 6 Metal-Silicon Reactions and Silicide Formation (1984) (2)
Erratum: ‘‘Effects of strain on boron diffusion in Si and Si1−xGex’’ [Appl. Phys. Lett. 66, 580 (1995)] (1995) (2)
Super-saturated transistor switches (1961) (2)
PHYSICAL PROPERTIES OF ION-IMPLANTED SEM-ANNEALED SILICON (1980) (1)
Maine Yankee startup and initial operation (1973) (1)
Classroom experiments for the teaching of physical insight in electrical engineering (1971) (1)
Chapter 1 Beam Processing of Silicon (1984) (1)
CW beam processing of silicon and other semiconductors (1984) (1)
The 1/f Noise on Surface‐Doped Germanium Filaments (1962) (1)
Micrometre-gate m.e.s.f.e.t.s on laser-annealed polysilicon (1980) (1)
IIIB-3 Limited reaction processing: In-situ epitaxial silicon thin-oxide polysilicon layers for MOS transistors (1986) (1)
A program for education of minority group students in electrical engineering (1971) (1)
Deep electronic levels at growth interrupted interfaces in low‐temperature‐grown GaAs and the pressure dependence of these levels (1992) (1)
PROPERTIES OF MOSFETS FABRICATED IN LASER-ANNEALED POLYSILICON FILMS (1980) (1)
APPLICATION OF CW BEAM PROCESSING TO SEMICONDUCTOR DEVICE FABRICATION (1980) (1)
Ion Implantation of as in CdTe: Electrical Characteristics and Radiation Damage (1975) (1)
Enhanced-Mobility Deep Submicron Strained-Si n-MOSFETs (1998) (1)
Application of Quantized Trapped Flux in a Superconducting Memory (1963) (1)
ADVANCED BONUS CORE DEVELOPMENT PROGRAM. Final Report. (1966) (1)
Charge control of field effect transistors (1966) (1)
Characterization of Laser Induced Backside Damage for Gettering Purposes (1981) (1)
Novel epitaxial p-Si/n-Si/sub 1-y/C/sub y//p-Si heterojunction bipolar transistors (2000) (1)
Beam Annealing of Ion-Implanted Silicon (1983) (1)
Effect of Band Alignment and Density of States on the Collector Current in p-Si/n-Si C /p-Si HBTs (2003) (1)
Chapter 2 Temperature Distributions and Solid Phase Reaction Rates Produced by Scanning CW Beams (1984) (1)
Electron Physics Research. (1969) (1)
The Relationship between Stanford and Silicon Valley: a Dean's Perspective (2000) (1)
System 80: combustion engineering's standard 3800-MWt PWR (1974) (1)
Off-Campus Higher Education Engineering Instruction Using Videotape. Final Report. (1976) (1)
Chapter 5 Beam Recrystallized Polycrystalline Silicon: Properties, Applications, and Techniques (1984) (1)
Circuit Simulation Of Three-Dimensional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Device Structures In Beam-Recrystallized Polysilicon Films (1983) (1)
Characterization of Arsenic Implanted Epitaxially Aligned Polysilicon-on-Silicon Films (1987) (1)
CW Laser Annealing of Low Dose Implants in GaAs (1980) (1)
Etching Technique for Characterization of Epitaxial Alignment of Arsenic Implanted Polycrystalline Silicon Films on Silicon (1988) (1)
Silicon Valley: Startups, Strategies, and the Stanford Connection. (1994) (1)
Grain Enlargment in Polysilicon on Insulating Substrates Induced by Q-Switched Nd:Yag Laser Irradiation (1981) (0)
Ion Implantation and Laser Processing of III-V Compound Semiconductors with Applications to the Fabrication of Microwave Devices (1981) (0)
DESIGN AND FABRICATION OF THE BONUS REACTOR PRESSURE VESSEL. Supplement 2 (1962) (0)
Epitaxial Alignment of as Implanted Polysilicon Emitters (1987) (0)
Heater for semiconductor wafer or substrate (1991) (0)
ADVANCED BONUS CORE DEVELOPMENT PROGRAM. Quarterly Progress Report No. 4, August-November 1964 (1964) (0)
ADVANCED BONUS CORE DEVELOPMENT PROGRAM. Quarterly Progress Report No. 1, November 1963-January 1964 (1964) (0)
WP-A2 Micro-meter gate-length MESFET's on laser-annealed PolySilicon (1980) (0)
V-3 control of zinc diffusion in GaAs 0.6 P 0.4 by ion implantation (1975) (0)
The Extraction of Minority Carrier Lifetime from the Current-Voltage Characteristics of Si/Si 1−x Ge x Devices (1991) (0)
The use of ion implantation for the control of impurity diffusion in 3-5 compound semiconductors (1975) (0)
Applications of Scanning CW Lasers and Electron Beams in Silicon Technology : A-3: LASER ANNEALING/SOS DEVICES (1980) (0)
A Seeded Channel Approach to Silicon-On-Insulator Technology (1985) (0)
United States Patent to Gibbons 54 SEMICONDUCTOR (2017) (0)
Annealing of ion‐implanted Si using scanned laser and electron beams (2008) (0)
Integrated circuit physics and technology (1981) (0)
VB-2 a three-dimensional merged vertical bipolar-MOS device in recrystallized silicon (1985) (0)
The Origins and Development of the Silicon Valley Startup Model (2009) (0)
Deep levels in ion‐implanted, CW laser‐annealed silicon (2008) (0)
ADVANCED BONUS CORE DEVELOPMENT PROGRAM. Quarterly Progress Report No. 7, June-September 1965 (1965) (0)
Epitaxial growth and processing of Si1-xGex/Si for heterojunction bipolar transistors using rapid thermal techniques (1992) (0)
Device applications of beam crystallized silicon-on-insulators (1982) (0)
Discussion Group 2. Speculation and enterprise as factors in planning for repetitive production (1948) (0)
Minority carrier transport parameters in n-Si/p+-Si/sub 1-x/Ge/sub x//n-Si HBTs using A.C. and D.C. measurements (1994) (0)
Vertical Bipolar Transistors and a Merged 3–D Vertical Bipolar—Mos Device in Recrystallized Polysilicon (1985) (0)
Ion implantation in cadmium telluride (1976) (0)
CW laser annealing of A15 superconductors (1981) (0)
DESIGN AND FABRICATION OF THE BONUS REACTOR PRESSURE VESSEL. SUPPLEMENT 3 (1963) (0)
Effect of Temperature on Phosphorus Release from Anoxic Western Lake Erie Sediments by Kenneth (2015) (0)
Boltzmann Transport Equation Analysis of Ion Implantation Range and Damage Distributions (1985) (0)
Growth and Analysis of Polycrystalline Carbon for Mos Applications (1996) (0)
Element in Broadband Amplifiers (1968) (0)
A graphical analysis of the I-V characteristics of pnpn devices (1966) (0)
Annealing of ion-implanted Si using a scanned CW laser system (1980) (0)
Implantation-Controlled Diffusion of Impurities in Compound Semiconductors with Application to the Fabrication of Microwave Devices. (1978) (0)
Laser and electron beam processing of semiconductors (1985) (0)
Annealing of ion implanted silicon using scanned laser and electron beams (1979) (0)
Ion beam analysis of beam processing operations (1981) (0)
Laser and Electron Beam Processing of Semiconductors: CW Beam Processing of Ion Implanted Silicon (1980) (0)
Making Ultrathin Solar Cells (1991) (0)
Oxygen recoil during implantation of as into SiO 2 films (1975) (0)
Rapid Thermal Processing of 3-5 Compound Semiconductors with Application to the Fabrication of Microwave Devices (1988) (0)
WP-A5 oxidation studies of WSi2and PdSi formed by scanned laser-beam reaction (1980) (0)
Transistor amplifier performance (1956) (0)
United States Patent ( 19 ) Gibbons 54 PROCESS FOR HIGH TEMPERATURE SURFACE REACTIONS IN SEMCONDUCTOR MATERAL (2017) (0)
Fabrication and Measurement of Silicon Concentrator Solar Cells (1978) (0)
TP-A5 nonalloyed ohmic contacts to n-GaAs by CW laser-assisted diffusion from a SnO<inf>2</inf>/SiO<inf>2</inf>source (1980) (0)
Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates (1981) (0)
Introduction to Semiconductor Physics and Physical Electronics and Circuit Models of Transistors (1967) (0)
The diffusion of ion−implanted boron in silicon dioxide (2008) (0)
PROTON-ENHANCED DIFFUSION OF As IN Si FROM A DOPED POLYCRYSTALLINE SOURCE (DOPOS) (1973) (0)
IDGH FREQUENCY Si/Sh_xGex HETEROJUNCTION BIPOLAR TRANSISTORS (1989) (0)
APPLICATIONS OF SCANNING CW LASER AND ELECTRON BEAMS IN SEMICONDUCTOR PROCESSING (1979) (0)
Strain Engineering of Silicon-Based Heterostructures : Materials and Devices (1998) (0)
Abstract: Ion implantation and proton−enhanced diffusion in semiconductors (1975) (0)
Encapsulation and Annealing of Sulfur and Selenium Implanted Gallium Arsenide (1978) (0)
Evening Panel Session (November 16, 1983) Soi Technologies for Integrated Circuits (1983) (0)
TA-A2 sheet resistivity reduction in polycrystalline silicon by pulsed laser and CW laser annealing (1979) (0)
APPLICATIONS OF CW BEAM PROCESSING TO ION IMPLANTED CRYSTALLINE SILICON (1985) (0)
LPE GROWTH OF SILICON FROM POLYSILICON/SILICON STRUCTURE USING CW ARGON LASER (1981) (0)
ADVANCED BONUS CORE DEVELOPMENT PROGRAM. Quarterly Progress Report No. 2, February-April 1964 (1964) (0)
METAL-SILICON REACTIONS AND SILICIDE FORMATION (1985) (0)
ELECTRON BEAM - PN JUNCTION ACTIVE DEVICES AND MEASUREMENTS. (1967) (0)
Applications Of Scanning Continuous Wave (CW) And Pulsed Lasers In Silicon Technology (1980) (0)
Laser and Electron Beam Processing of Semiconductors: CW Beam- Recrystallized Polysilicon as a Device-Worthy Material (1980) (0)
WP-A2 the use of a scanned continuous laser beam for annealing of ion implantation damage in silicon (1978) (0)
Laser alloying of Au‐Ge ohmic contacts on GaAs (2008) (0)
Change in editorial board (1964) (0)
Dopant Control and Diffusion at the Si/Si1-xGex Interface for High-Speed Heterojunction Bipolar Transistors (1994) (0)
Circuit Simulation of Three-Dimensional Device in Beam-Recrystallized Polysilicon Films (1983) (0)
RESEARCH AND DEVELOPMENT OF MICROWAVE TUBES AND DEVICES. (1966) (0)
Limited reaction processing for semiconductor device fabrication (1987) (0)
Thin Film Reaction Induced by CW Scanned Laser and E-Beam (1983) (0)
Limited Reaction Processing: Heterostructure and Novel Device Fabrication. (1996) (0)
THERMAL PULSE DIFFUSION OF ZINC IN GALLIUM ARSENIDE FROM AN ELEMENTAL SOURCE (1984) (0)
Rapid Thermal Processing-Based Heteroepitaxy: Material and Device Challenges (1995) (0)
Erratum: Epitaxial alignment of arsenic‐implanted polycrystalline silicon films on 〈100〉 silicon obtained by rapid thermal annealing [Appl. Phys. Lett. 50, 751 (1987)] (1987) (0)
Fabrication of GaAs MESFET's with non-alloyed ohmic contacts (1981) (0)
Limited Reaction Processing: Growth of III-V Epitaxial Layers by Rapid Thermal Metalorganic Chemical Vapor Deposition (1987) (0)
Recrystallization of 75As implanted silicon by a free running ruby laser (2008) (0)
ADVANCED BONUS CORE DEVELOPMENT PROGRAM. Quarterly Progress Report No. 5, December 1964-February 1965 (1965) (0)
Anomalous Local Oxidation and Recrystallization of Vacuum‐Deposited Amorphous Silicon by CW Laser Irradiation (1982) (0)
Polymer Films on Electrodes. XVI. In Situ Ellipsometric Measurements of Polybipyrazine, Polyaniline, and Polyvinylferrocene Films (2009) (0)
Charges at a Laser- ecrystallized- Polycryst line-Silicon I Insulator Interface (1980) (0)
Erratum: Thermal pulse annealing of boron‐implanted HgCdTe [Appl. Phys. Lett. 41, 750 (1982)] (1983) (0)
DESIGN AND FABRICATION OF THE BONUS REACTOR PRESSURE VESSEL. SUPPLEMENT 1 (1962) (0)
Limited reaction processing; Flexible thermal budgeting (2008) (0)
A 14 o / o efficient nonaqueous semiconductor / liquid junction solar cell (2002) (0)
ADVANCED BONUS CORE DEVELOPMENT PROGRAM. Quarterly Progress Report No. 3, May-July 1964 (1964) (0)
Semiconductor electronics / by James F. Gibbons (1966) (0)
ADVANCED BONUS CORE THERMAL CYCLE TEST REPORT (1965) (0)
Effect of grown-in biaxial strain on deep level defects in Si1−yCy/Si epitaxial heterostructures (1999) (0)
Limited Reaction Processing: Growth of Si-Ge/Si for Heterojunction Bipolar Transistor Applications (1989) (0)
ELECTRONIC PROPERTIES OF ARSENIC- AND PHOSPHORUS-IMPLANTED CADMIUM TELLURIDE (1980) (0)
MA-3 applications of scanning CW laser and electron beams for silicon device processing (1979) (0)
EPITAXIAL VAPOR GROWTH OF III-V COMPOUNDS. (1963) (0)
A Shining Beacon [People] (2021) (0)

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