James J. Coleman

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James J. Coleman is affiliated with the following schools: Stanford University, University of Texas at Dallas, University of Illinois Urbana-Champaign, University of Texas at Arlington

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James J. Coleman

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According to Wikipedia, James J. Coleman is an electrical engineer who worked at Bell Labs, Rockwell International, and the University of Illinois, Urbana. He is best known for his work on semiconductor lasers, materials and devices including strained-layer indium gallium arsenide lasers and selective area epitaxy. Coleman is a Fellow of the IEEE and a member of the US National Academy of Engineering.

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James J. Coleman's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Disorder of an AlAs‐GaAs superlattice by impurity diffusion (1981) (542)
GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies (2010) (512)
Disorder of an AlAs‐GaAs superlattice by silicon implantation (1982) (152)
IR‐red GaAs‐AlAs superlattice laser monolithically integrated in a yellow‐gap cavity (1981) (148)
Epitaxial growth of three-dimensionally architectured optoelectronic devices. (2011) (116)
Microdisk lasers vertically coupled to output waveguides (2002) (109)
Characterization of InGaAs‐GaAs strained‐layer lasers with quantum wells near the critical thickness (1989) (89)
Semiconductor quantum dots (2016) (84)
The incorporation of arsenic in GaN by metalorganic chemical vapor deposition (1998) (80)
Two-dimensional transient simulation of an idealized high electron mobility transistor (1985) (80)
Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers (1986) (80)
Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN (1997) (79)
High‐energy (Visible‐red) stimulated emission in GaAs (1981) (76)
Measurement of the carrier dependence of differential gain, refractive index, and linewidth enhancem (1990) (76)
New ultrafast switching mechanism in semiconductor heterostructures (1986) (75)
Implantation disordering of AlxGa1−xAs superlattices (1985) (75)
A distributed feedback ridge waveguide quantum well heterostructure laser (1991) (74)
Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy (1997) (74)
InGaAs-GaAs Strained Layer Quantum Well Buried Heterostructure Lasers (λ> 1 μm) by Metalorganic Chemical Vapor Deposition (1989) (73)
Metalorganic chemical vapor deposition (1988) (71)
Selective enhancement of 1540 nm Er3+ emission centers in Er-implanted GaN by Mg codoping (2000) (66)
Anomalous length dependence of threshold for thin quantum well AlGaAs diode lasers (1986) (66)
Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits (1997) (64)
Alloy clustering in AlxGa1-xAs-GaAs quantum-well heterostructures (1980) (63)
Electric field directed assembly of an InGaAs LED onto silicon circuitry (2000) (62)
Ballistic-phonon heat conduction at the nanoscale as revealed by time-resolved x-ray diffraction and time-domain thermoreflectance (2007) (60)
The dynamics of electron‐hole collection in quantum well heterostructures (1982) (59)
GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching (2013) (54)
Dependence of threshold current density on quantum well composition for strained-layer InGaAs-GaAs lasers by metalorganic chemical vapor deposition (1989) (52)
Metalorganic chemical vapor deposition for optoelectronic devices (1997) (52)
Transient capacitance spectroscopy on large quantum well heterostructures (1983) (51)
Semiconductor Quantum Dot Lasers: A Tutorial (2011) (50)
Pulsed room‐temperature operation of In1−xGaxP1−zAsz double heterojunction lasers at high energy (6470 Å, 1.916 eV) (1976) (50)
Y-Branch Surface-Etched Distributed Bragg Reflector Lasers at 850 nm for Optical Heterodyning (2007) (49)
Time‐dependent study of low energy electron beam irradiation of Mg‐doped GaN grown by metalorganic chemical vapor deposition (1996) (49)
GaN epitaxial lateral overgrowth and optical characterization (1998) (47)
Carrier recombination rates in strained-layer InGaAs-GaAs quantum wells (1991) (45)
Two-dimensional numerical analysis of the high electron mobility transistor (1984) (44)
Low-threshold narrow-linewidth InGaAs-GaAs ridge-waveguide DBR lasers with first-order surface gratings (1997) (44)
Impurity states are the origin of yellow-band emission in GaN structures produced by epitaxial lateral overgrowth (1999) (44)
Modeling of quantum-well lasers for computer-aided analysis of optoelectronic integrated circuits (1990) (43)
Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition (1997) (42)
Strained-layer InGaAs quantum-well heterostructure lasers (2000) (42)
Induced disorder of AlAs-AlGaAs-GaAs quantum-well heterostructures (1982) (41)
Viable strained-layer laser at λ=1100 nm (1990) (41)
Impurity‐induced disorder‐delineated optical waveguides in GaAs‐AlGaAs superlattices (1987) (41)
Impurity induced disordered quantum well heterostructure stripe geometry lasers by MeV oxygen implantation (1989) (37)
Room-temperature operation of patterned quantum-dot lasers fabricated by electron beam lithography and selective area metal-organic chemical vapor deposition (2005) (37)
Very narrow linewidth asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers (1996) (37)
InGaAs/GaAs 3D architecture formation by strain-induced self-rolling with lithographically defined rectangular stripe arrays (2008) (36)
Limitations of the direct‐indirect transition on In1−xGaxP1−zAsz heterojunctions (1977) (35)
Absorption measurements at high pressure on AlAs‐AlxGa1−xAs‐GaAs superlattices (1982) (35)
Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure quantum-well lasers by three-step selective-area metalorganic chemical vapor deposition (1994) (35)
Metallization to asymmetric cladding separate confinement heterostructure lasers (1995) (35)
High-power phase-locked InGaAs strained-layer quantum well heterostructure periodic laser array (1988) (34)
Single‐longitudinal‐mode metalorganic chemical‐vapor‐deposition self‐aligned GaAlAs‐GaAs double‐heterostructure lasers (1980) (34)
Growth, characterization, and modeling of ternary InGaAs-GaAs quantum wells by selective-area metalorganic chemical vapor deposition (1995) (33)
A Narrow-Linewidth, Yb Fiber-Amplifier-Based Upper Atmospheric Doppler Temperature Lidar (2009) (33)
Dual-wavelength InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers with tunable mode separation (2000) (33)
The growth and characterization of metalorganic chemical vapor deposition (MO-CVD) quantum well transport structures (1981) (32)
The effect of interface arsenic domains on the electrical properties of GaAs MOS structures (1978) (31)
High energy AlxGa1−xAs (0⩽x⩽0.1) quantum‐well heterostructure laser operation (1982) (31)
High density patterned quantum dot arrays fabricated by electron beam lithography and wet chemical etching (2008) (31)
Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate (1999) (31)
Photoluminescence and photoluminescence excitation spectroscopy of multiple Nd 3 + sites in Nd-implanted GaN (1998) (31)
Characteristics of GaN stripes grown by selective-area metalorganic chemical vapor deposition (1997) (30)
Optimization and characterization of index-guided visible AlGaAs/GaAs graded barrier quantum well laser diodes (1987) (29)
Epitaxy of InAs quantum dots on self-organized two-dimensional InAs islands by atmospheric pressure metalorganic chemical vapor deposition (2001) (29)
Effect of composition and pressure on the nitrogen isoelectronic trap in GaAs 1-x P x (1976) (29)
The exciton in recombination in AlxGa1−xAs-GaAs quantum-well heterostructures (1980) (29)
Band discontinuities in GaAs/AlxGa1−xAs heterojunction photodiodes (1987) (29)
A Novel Ordered Nanopore Array Diode Laser (2008) (27)
InGaAs-AlGaAs-GaAs strained-layer quantum-well heterostructure square ring lasers (1995) (27)
Laser beam heating and transformation of a GaAs‐AlAs multiple‐quantum‐well structure (1984) (27)
A strained-layer InGaAs-GaAs asymmetric cladding gain-coupled DFB laser with titanium surface gratings by metalorganic chemical vapor deposition (1997) (27)
A new method of fabricating gallium arsenide MOS devices (1978) (27)
Antiguiding in narrow stripe gain‐guided InGaAs‐GaAs strained‐layer lasers (1991) (27)
Characterization and determination of the band‐gap discontinuity of the InxGa1−xAs/GaAs pseudomorphic quantum well (1991) (27)
Conditions for uniform growth of GaAs by metalorganic chemical vapor deposition in a vertical reactor (1985) (27)
Effect of e‐beam irradiation on a p‐n junction GaN light emitting diode (1996) (26)
Photoluminescence and stimulated emission in Si‐ and Ge‐disordered AlxGa1−xAs‐GaAs superlattices (1985) (26)
Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth (2004) (26)
Complementary self-aligned laser by metalorganic chemical vapour deposition (1985) (26)
Theoretical and experimental analysis of the switching mechanism in heterostructure hot-electron diodes (1987) (25)
In/sub x/Ga/sub 1-x/As-Al/sub y/Ga/sub 1-y/As-GaAs strained-layer quantum-well heterostructure circular ring lasers (1992) (25)
High‐barrier cluster‐free AlxGa1−xAs‐AlAs‐GaAs quantum‐well heterostructure laser (1981) (25)
Room‐temperature switching and negative differential resistance in the heterostructure hot‐electron diode (1988) (25)
Wavelength tuning in strained layer InGaAs-GaAs-AlGaAs quantum well lasers by selective-area MOCVD (1994) (25)
Luminescence, laser, and carrier‐lifetime behavior of constant‐temperature LPE In1−x Gax P (x=0.52) grown on (100) GaAs (1974) (25)
Luminescence studies of GaN grown on GaN and GaN/AlN buffer layers by metalorganic chemical vapor deposition (1996) (25)
Strained-layer quantum well heterostructure lasers (1992) (24)
Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot (2011) (24)
Application of selective chemical reaction concept for controlling the properties of oxides on GaAs (1979) (24)
Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy (1994) (23)
High performance laser with nanopatterned active layer by selective area epitaxy (2005) (23)
Induced phonon‐sideband laser operation of large‐quantum‐well AlxGa1−xAs‐GaAs heterostructures (Lz ∼200–500 Å) (1980) (23)
Liquid phase epitaxial (LPE) grown junction In1-xGaxP (x∼0.63) laser of wavelength λ∼5900 Å (2.10 eV, 77°K) (1974) (23)
Structural analysis of Au-Ni-Ge and Au-Ag-Ge alloyed ohmic contacts on modulation-doped AlGaAs-GaAs heterostructures (1986) (23)
A dual-wavelength source with monolithically integrated electroabsorption modulators and Y-junction coupler by selective-area MOCVD (1997) (23)
Selective growth of InAs quantum dots by metalorganic chemical vapor deposition (2002) (23)
Temperature-dependent factors contributing to T0 in graded-index separate-confinement-heterostructure single quantum well lasers (1987) (23)
MQW wavelength-tunable DBR lasers with monolithically integrated external cavity electroabsorption modulators with low-driving voltages fabricated by selective-area MOCVD (1996) (22)
Two-dimensional rectangular lattice distributed feedback lasers: A coupled-mode analysis of TE guided modes (1995) (22)
Excitation mechanisms of multiple Er3+ sites in Er-implanted GaN (1998) (22)
Scaling the Aspect Ratio of Nanoscale Closely Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport (2017) (22)
High power Yb-doped fiber laser-based LIDAR for space weather (2008) (22)
Twelve-channel strained-layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array for WDM applications by selective-area MOCVD (1994) (22)
Monolithic integration of a strained-layer InGaAs-GaAs-AlGaAs quantum-well laser with a passive waveguide by selective-area MOCVD (1993) (22)
Narrow Linewidth Surface-Etched DBR Lasers: Fundamental Design Aspects and Applications (2013) (21)
CMOS Compatible Catalyst for MacEtch: Titanium Nitride Assisted Chemical Etching in Vapor Phase for High Aspect Ratio Silicon Nanostructures. (2019) (21)
Self-Anchored Catalyst Interface Enables Ordered Via Array Formation from Submicrometer to Millimeter Scale for Polycrystalline and Single-Crystalline Silicon. (2018) (21)
Depressed index cladding graded barrier separate confinement single quantum well heterostructure laser (1991) (21)
Liquid phase epitaxial In1-xGaxP1-zAsz/GaAs1-yPyheterojunction lasers (1975) (21)
Effect of confining layer aluminum composition on AlGaAs‐GaAs‐InGaAs strained‐layer quantum well heterostructure lasers (1990) (21)
Threshold current density in strained layer In/sub x/Ga/sub 1-x/As-GaAs quantum-well heterostructure lasers (1992) (21)
Narrow-linewidth asymmetric cladding distributed Bragg reflector semiconductor lasers at 850 nm (2006) (20)
Dual-wavelength asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers (1999) (20)
Index of refraction of AlAs‐GaAs superlattices (1983) (20)
Ridge waveguide distributed Bragg reflector InGaAs/GaAs quantum well lasers (1994) (20)
Spatially resolved band-edge emission from partially coalesced GaN pyramids prepared by epitaxial lateral overgrowth (2000) (20)
Damage and lattice strain in ion‐irradiated AlAs (1994) (20)
X-ray diffraction and channeling-Rutherford backscattering spectrometry studies of ion implantation damage in AlxGa1−xAs (1998) (19)
Patterned quantum dot molecule laser fabricated by electron beam lithography and wet chemical etching (2010) (19)
Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructures (1980) (19)
Absorption and stimulated emission in an AlAs-GaAs superlattice (1981) (19)
A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition (1994) (19)
Zinc contamination and misplaced p-n junctions in InP-GaInPAs D.H. lasers (1978) (19)
Continuous room‐temperature photopumped laser operation of modulation‐doped AlxGa1−xAs/GaAs superlattices (1981) (18)
Single-interface enhanced mobility structures by metalorganic chemical vapour deposition (1981) (18)
Convergent-beam electron diffraction study of strain modulation in GaAs/InGaAs superlattices grown by metal-organic chemical vapour deposition (1988) (18)
Characterization of an InGaAs-GaAs-AlGaAs strained-layer distributed-feedback ridge-waveguide quantum-well heterostructure laser (1992) (18)
An Analytical Model for the Ordered Nanopore Array Diode Laser (2009) (17)
Interface structure of GaAs/AlAs semiconductor superlattices prepared by MOCVD (1984) (17)
High pressure measurements on AlxGa1−xAs‐GaAs (x = 0.5 and 1) superlattices and quantum well heterostructure lasers (1982) (17)
Wavelength tunable two-pad ridge waveguide distributed Bragg reflector InGaAs-GaAs quantum well lasers (1994) (17)
Absorption, stimulated emission, and clustering in AlAs‐AlxGa1−xAs‐GaAs superlattices (1981) (17)
Strained layer InGaAs channel negative-resistance field-effect transistor (1989) (17)
Ethyldimethylindium for the growth of InGaAs‐GaAs strained‐layer lasers by metalorganic chemical vapor deposition (1989) (17)
Curved waveguides for spatial mode filters in semiconductor lasers (2004) (17)
Yellow In1−xGaxP1−zAsz double‐heterojunction lasers (1976) (17)
Optical properties of reactive ion etched corner reflector strained-layer InGaAs-GaAs-AlGaAs quantum-well lasers (1993) (17)
Homogeneous or inhomogeneous line broadening in a semiconductor laser: Observations on In1−xGaxP1−zAsz double heterojunctions in an external grating cavity (1976) (17)
Melt removal and planar growth of In1−xGaxP1−zAsz heterojunctions (1976) (16)
Internal loss, modal characteristics, and bend loss of asymmetric cladding ridge waveguide lasers at 850 nm (2008) (16)
DEPTH DEPENDENCE OF ION IMPLANTATION DAMAGE IN ALXGA1-XAS/GAAS HETEROSTRUCTURES (1996) (16)
Holonyak et al. Respond (1981) (15)
InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE (1997) (15)
Interface characterization of (In,Ga)As/AlGaAs layers grown by metalorganic chemical vapor deposition (1991) (15)
A new buffer layer for MOCVD growth of GaN on sapphire (1995) (15)
III-V heterostructure interfaces by metalorganic chemical vapor deposition (1986) (15)
Wavelength-tunable asymmetric cladding ridge-waveguide distributed Bragg reflector lasers with very narrow linewidth (1996) (15)
Device-quality epitaxial AlAs by metalorganic-chemical vapor deposition (1981) (15)
Theoretical and experimental investigations of the heterostructure hot electron diode (1988) (14)
Quenching of stimulated phonon emission in AlxGa1−xAs-GaAs quantum-well heterostructures (1981) (14)
Strained-Layer InGaAs-GaAs-AIGaAs Buried-Heterostructure Lasers with Nonabsorbing Mirrors by Selective-Area MOCVD (1995) (14)
Deep-level transient spectroscopy studies of defects in GaAs-AlGaAs superlattices (1986) (14)
Characterization of mismatched InAsGaAs heterostructures grown by metalorganic chemical vapor deposition (1988) (14)
Widely tunable 850-nm metal-filled asymmetric cladding distributed Bragg reflector lasers (2006) (14)
Distributed feedback strained layer quantum well heterostructure 980 nm laser fabricated by two-step metalorganic chemical vapor deposition (1993) (14)
Perturbation of Au-assisted planar GaAs nanowire growth by p-type dopant impurities (2013) (14)
Index Dispersion above the Fundamental Band Edge in Nitrogen-Doped GaAs 1-y P y (y=0.38, E N Γ ) (1974) (14)
Advances in semiconductor lasers (2012) (14)
S‐bend loss in disorder‐delineated GaAs heterostructure laser waveguides with native and blue shifted active regions (1990) (13)
Controlled barrier height InP Schottky diodes prepared by sulfur diffusion (1977) (13)
InGaAs-GaAs-AlGaAs strained-layer distributed feedback ridge waveguide quantum well heterostructure laser array (1991) (13)
Effects of material growth technique and Mg doping on Er3+ photoluminescence in Er-implanted GaN (2001) (13)
Metalorganic chemical vapor deposition of InGaAs-GaAs-AlGaAs strained-layer quantum well lasers (1991) (13)
Reliable InGaAs quantum well lasers at 1.1 mu m (1991) (13)
High power continuous operation of laser diodes at 1064 nm (1991) (13)
Temperature dependence of ion-beam mixing in III-V semiconductors (1995) (13)
Heterojunction laser operation of N‐free and N‐doped GaAs1−yPy (y=0.42–0.43, λ∼6200 Å, 77 °K) near the direct‐indirect transition (y∼yc?0.46) (1975) (13)
Zn diffusion and disordering of an AlAs-GaAs superlattice along its layers (1982) (13)
Compositional disordering and the formation of semi-insulating layers in AlAs-GaAs superlattices by MeV oxygen implantation (1989) (13)
Differential gain in bulk and quantum well diode lasers (1991) (13)
Nonplanar index‐guided quantum well heterostructure periodic laser array (1988) (12)
Single and tunable dual-wavelength operation of an InGaAs-GaAs ridge waveguide distributed Bragg reflector laser (2000) (12)
Phonon contribution to metalorganic chemical vapor deposited Alx Ga1−xAs‐GaAs quantum‐well heterostructure laser operation (1981) (12)
Temperature dependence of ion beam mixing in GaAs, AlAs, and GaAs/AlAs/GaAs (1993) (12)
Direct Study of the Nature of Nitrogen Bound States in GaAs 1-x P x :N (1976) (12)
Ensemble Monte Carlo simulation of real space transfer (NERFET/CHINT) devices (1988) (12)
Chemical characterization of (In,Ga)As/(Al,Ga)As strained interfaces grown by metalorganic chemical vapor deposition (1992) (12)
Resonant enhancement (?) of the recombination probability at the nitrogen-trap, Γ-band edge crossover in GaAs1-xPx: N(EN = EΓ, x ≡ xN) (1975) (12)
Use of tertiarybutylarsine in atomic layer epitaxy and laser‐assisted atomic layer epitaxy of device quality GaAs (1992) (12)
Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD (1995) (12)
High‐efficiency, low‐threshold, Zn‐diffused narrow stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition (1982) (12)
An asymmetric cladding gain-coupled DFB laser with oxide defined metal surface grating by MOCVD (1997) (12)
Directed self-assembly of InAs quantum dots on nano-oxide templates (2011) (12)
Size fluctuations and high‐energy laser operation of AlxGa1−xAs‐AlAs‐GaAs quantum‐well heterostructures (1981) (11)
Convergent beam electron diffraction study of lattice distortion in InGaAs/GaAs strained‐layer superlattices grown by metalorganic chemical vapor deposition (1990) (11)
Microwave frequency operation of the heterostructure hot-electron diode (1988) (11)
Self-aligned high-quality total internal reflection mirrors (1995) (11)
Electroabsorption in single quantum well GaAs laser structures (1989) (11)
Phonon contribution to double‐heterojunction laser operation (1980) (11)
Electrically injected InGaAs/GaAs photonic crystal membrane light emitting microcavity with spatially localized gain (2008) (11)
Wavelength switching in narrow oxide stripe InGaAs-GaAs-AlGaAs strained-layer quantum well heterostructure lasers (1991) (11)
Effect of compositionally graded and superlattice buffer layers on the device performance of graded barrier quantum well heterostructure laser diodes (1987) (10)
Interface characteristics of As superlattices grown by MOCVD (1985) (10)
High pressure experiments on AlxGa1-xAs-GaAs quantum-well heterostructure lasers (1982) (10)
Low-loss semiconductor waveguide bends. (1988) (10)
Site-selective photoluminescence excitation and photoluminescence spectroscopy of Er-implanted wurtzite GaN (1997) (10)
Predicting diode laser performance (1991) (10)
Polarization-independent one-dimensional grating coupler design on hybrid silicon/LNOI platform. (2020) (10)
In1−xGaxP1−zAsz double‐heterojunction‐laser operation (77 °K, yellow) in an external grating cavity (1976) (10)
Dynamics of heterostructure hot‐electron diodes (1989) (10)
Dual-channel strained-layer in GaAs-GaAs-AlGaAs WDM source with integrated coupler by selective-area MOCVD (1994) (10)
Be doping of liquid-phase-epitaxial InP (1979) (10)
Arsenic and gallium distribution coefficients in liquid‐phase epitaxial GaxIn1−xPyAs1−y (1978) (9)
Broadband emission from InGaAs-GaAs-AlGaAs LED with integrated absorber by selective-area MOCVD (1995) (9)
Temperature dependence of photoluminescence spectra from multiple Er3+ sites in Er-implanted undoped and Mg-doped GaN (2001) (9)
Annealing studies of photoluminescence spectra from multiple Er3+ centers in er-implanted GaN (1999) (9)
A parametric analysis of the density of states and intraband energy gaps in an ordered nanopore array diode laser (2009) (9)
900-mW high brightness buried ridge lasers by selective area epitaxy (2002) (9)
On the amorphization process in Al0.6Ga0.4As/GaAs heterostructures (1998) (9)
Physical and electrical properties of plasma-grown oxide on Ga 0.64Al0.36As (1977) (8)
Scattering loss and effective index step of asymmetric cladding surface-etched distributed Bragg reflector lasers at 850 nm (2007) (8)
Experimental gain characteristics and barrier lasing in strained‐layer InGaAs‐GaAs‐AlGaAs quantum well heterostructure lasers (1994) (8)
Investigation of effective-medium approximation, alloy, average-composition, and graded-composition models for interface analysis by spectroscopic ellipsometry (2007) (8)
High‐power nonplanar quantum well heterostructure periodic laser arrays (1988) (8)
MQW wavelength-tunable DBR lasers with monolithically integrated external-cavity electroabsorption modulators with low-driving-voltages fabricated by selective-area MOCVD (1996) (8)
Low drive voltage GaAs quantum well electroabsorption modulators obtained with a displaced junction (1994) (8)
InGaAs-GaAs quantum-well lasers with monolithically integrated intracavity electroabsorption modulators by selective-area MOCVD (1996) (8)
Surface acoustic wave properties of aluminum gallium arsenide (1989) (8)
Metalorganic Chemical Vapor Deposition of Iii–V Semiconductors (1989) (8)
Four wavelength distributed feedback ridge waveguide quantum‐well heterostructure laser array (1992) (8)
Strained-layer InGaAs-GaAs-AlGaAs lasers with monolithically integrated photodiodes by selective-area MOCVD (1995) (8)
MQW DBR lasers with monolithically integrated external-cavity electroabsorption modulators fabricated without modification of the active region (1997) (7)
Bending loss in optical waveguides for nonplanar laser array applications (1992) (7)
Growth, characterization and modeling of InxGa1−xP stripes by selective-area MOCVD (1996) (7)
650-mW single lateral mode power from tapered and flared buried ridge laser (2002) (7)
Experimental verification of reduced intersubband scattering in ordered nanopore lattices (2011) (7)
Ultraviolet laser‐assisted metalorganic chemical vapor deposition of GaAs (1989) (7)
Metal-organic chemical vapor deposition (1985) (7)
Strained layer AlGaAs-GaAs-InGaAs real-space transferred electron devices (1990) (7)
Nanoscale selective area epitaxy for optoelectronic devices (2007) (7)
Time-resolved photoluminescence of lithographically defined quantum dots fabricated by electron beam lithography and wet chemical etching (2011) (7)
Thickness monitoring of GaAs growth by surface photoabsorption in metalorganic chemical vapor deposition (1998) (7)
Selective Area Masked Growth (Nano to Micro) (2015) (7)
A corner reflector InGaAs-GaAs strained layer single quantum well coupled laser array (1994) (7)
Monolayer epitaxy of GaAs at 650 °C by metal–organic chemical‐vapor deposition with surface photoabsorption monitoring (1996) (7)
Two-dimensional transient simulation of the high electron mobility transistor (1984) (7)
Optical characteristics of high-power nonplanar periodic laser arrays (1989) (7)
High pressure measurements on photopumped low threshold AlxGa1−xAs quantum well lasers (1983) (7)
Effect of p-contact metallization on the performance of gain-coupled DFBs with oxide-defined surface gratings (1998) (7)
Lateral-mode discrimination in ridge waveguides by misaligned total internal reflection mirrors (1995) (7)
Spectral and threshold performance of patterned quantum dot lasers (2006) (7)
A single spectral mode wide stripe laser with very narrow linewidth (2011) (7)
Asymmetric cladding InGaAs-GaAs-AlGaAs ridge waveguide distributed Bragg reflector lasers with operating wavelengths of 915-935 nm (1997) (7)
Near- and far-field observations of transient behavior in pulsed graded barrier quantum well lasers (1986) (6)
A strained-layer InGaAs-GaAs buried heterostructure circular ring laser with integrated Y-coupled passive waveguide by selective-area metalorganic chemical vapor deposition (1994) (6)
Heterojunction laser operation of GaAs1−xPx : N on NN‐pair (ENN) and A‐line (EN) transitions near the direct (Γ) band edge (1975) (6)
Ion implantation in Al/sub x/Ga/sub 1-x/As: damage structures and amorphization mechanisms (1998) (6)
Introduction to the special issue on strained-layer optoelectronic materials and devices (1994) (6)
Novel design for high-power single-lateral-mode lasers (2001) (6)
Performance characteristics of a narrow-linewidth distributed-Bragg reflector laser for optical remote sensing systems (1996) (6)
Carrier density distribution in modulation doped GaAs-AlxGa1−xAs quantum well heterostructures (1983) (6)
Asymmetric cladding-ridge waveguide laser by selective-area MOCVD (1995) (6)
Nonplanar quantum well heterostructure window laser (1989) (6)
Observation of the upper branch (N′Γ) of the nitrogen isoelectronic trap in GaAs1−yPy (1977) (6)
An InGaAs-GaAs strained layer single quantum-well ring laser with a reactive ion-etched tetragonal cavity (1995) (6)
Phase‐locked shallow mesa graded barrier quantum well laser arrays (1986) (6)
A self-consistent model of a nonplanar quantum-well periodic laser array (1991) (6)
Characterization of Electrical and Optical Loss MOCVD Regrown in Interfaces Layer lnGaAs-GaAs Quantum Well Heterostructure Lasers (1992) (6)
Novel design for high power single lateral mode lasers (2001) (6)
Structural and compositional analyses of heterostructures grown by MOCVD (1985) (6)
High power single lateral mode buried ridge laser incorporating a curved waveguide for spatial filtering (2001) (5)
Patterned InGaAs quantum dots by selective area MOCVD (2005) (5)
Complementary self‐aligned laser arrays by metalorganic chemical vapor deposition (1986) (5)
Losses in semiconductor waveguide S bends fabricated by impurity-induced layer disordering. (1988) (5)
Integrated optical pulse shapers for high-bandwidth data packet encoding (1995) (5)
Wide-Stripe Distributed Bragg Grating Lasers With Very Narrow Spectral Linewidth (2011) (5)
Curved Waveguide Array Diode Lasers for High-Brightness Applications (2008) (5)
The role of the InGaAs surface in selective area epitaxy of quantum dots by indium segregation (2004) (5)
Aluminum-free strained-layer lasers emitting at 1.14 μm on low-composition InGaAs:n substrates by metalorganic chemical vapor deposition (1997) (5)
Characteristics of step‐graded separate confinement quantum well lasers with direct and indirect barriers (1990) (5)
Modal properties of depressed cladding semiconductor waveguides and lasers (1994) (5)
An all-diode-pumped master oscillator power amplifier for water vapor DIAL systems (1996) (5)
Controlled Zn diffusion for low threshold narrow stripe GaAlAs/GaAs DH lasers (1981) (5)
Loss in heterostructure waveguide bends formed on a patterned substrate (1989) (5)
Liquid phase epitaxial In/sub 1-x/Ga/sub x/P/sub 1-z/As/sub z/GaAs/sub 1-y/ P/sub y/ heterojunction lasers (1975) (5)
Ion implantation damage in Al0.6Ga0.4As/GaAs heterostructures (1995) (4)
InGaAs-GaAs strained layer quantum well heterostructure lasers (1989) (4)
InGaAs-GaAs-AlGaAs strained-layer quantum well lasers by metal-organic chemical vapour deposition (1990) (4)
Bandstructure Engineering With a 2-D Patterned Quantum Well Superlattice (2011) (4)
Narrow spectral linewidth surface grating DBR diode lasers (2012) (4)
High power single lateral mode diode lasers (2003) (4)
Quantum dots fabricated in InP/InGaAs by free Cl2 gas etching and metalorganic chemical vapor deposition regrowth (1996) (4)
InAs quantum dot selective area epitaxy using InGaAs thin films (2000) (4)
Nano on nano (2003) (4)
Depth profiles of strain in In0.10Ga0.90As/GaAs multiquantum well structures obtained by variable‐pump wavelength photoluminescence (1993) (4)
An asymmetric cladding gain-coupled DFB laser with oxide defined metal surface grating by MOCVD (1997) (4)
Strained-layer InGaAs-GaAs-InGaP buried-heterostructure quantum-well lasers on a low-composition InGaAs substrate by selective-area MOCVD (1998) (4)
p‐channel negative resistance field‐effect transistor (1990) (4)
Fabrication of InGaAs quantum dots by metal organic chemical vapor deposition and selective area epitaxy (2004) (4)
Pressure study of the N Γ and N X bound-state interaction in nitrogen-doped GaAs 1-x P x (1976) (4)
Anisotropic Damage Production at ION Irradiated GaAs/AlAs Interfaces (1991) (4)
Pressure study of the external quantum efficiency of N‐doped GaAs1−xPx light‐emitting diodes (1976) (3)
Integrated photonic devices by selective-area MOCVD (1997) (3)
Surface emitting lasers by selective area epitaxy for optical clock distribution (2002) (3)
Introduction to the issue on nanostructures and quantum dots (2000) (3)
Compositional variation of microstructure in ion-implanted Al x Ga 1− x As (2000) (3)
MeV implantation masking using an aluminum gallium arsenide metal liftoff layer (1989) (3)
Highly uniform periodic inverse quantum dots arrays (2011) (3)
Laser Assisted Atomic Layer Epitaxy-A Vehicle to Optoelectronic Integration (1991) (3)
Quantum well heterostructure lasers (1994) (3)
High-power pulsed operation of an optimized nonplanar corrugated substrate periodic laser diode array (1990) (3)
Photoluminescence quenching spectroscopy of trap-mediated Er 3+ excitation mechanisms in Er-implanted GaN (1997) (3)
Low-temperature laser photochemical vapor deposition of GaAs (1989) (3)
MP-B2 single longitudinal mode MOCVD GaAlAs-GaAs self-aligned structure lasers (1980) (3)
InGaAs‐GaAs‐AlGaAs gain‐guided arrays operating in the in‐phase fundamental array mode (1990) (3)
Selective MOCVD growth of InGaAs/GaAs and InGaAs/InP quantum dots employing diblock copolymer nanopatterning (2009) (3)
Dual-channel strained-layer InGaAs-GaAs-AlGaAs WDM source with integrated coupler by selective-area MOCVD (1994) (3)
Index‐guided operation in narrow stripe InGaAs‐GaAs strained‐layer quantum well heterostructure lasers by MeV oxygen implantation (1991) (3)
Gunn oscillation in GaAs optically triggered by 1.06 µm radiation (1981) (3)
Low threshold InGaAs-AlGaAs-GaAs strained-layer quantum well heterostructure square ring lasers (1993) (3)
Scaling Challenges in High Power Photonic Crystal Surface-Emitting Lasers (2022) (3)
Inhomogeneity in the fabrication of InGaAs/GaAs quantum wire arrays by selective-area metalorganic chemical vapor deposition (1996) (3)
Phase separation in In0.3Ga0.7As epitaxial layers (1993) (3)
Operational and design considerations for broad area graded barrier quantum well heterostructure lasers grown by metalorganic chemical vapor deposition for high power applications (1988) (3)
Lateral inhomogeneity in InGaAs-GaAs quantum wire arrays by selective-area metalorganic chemical vapor deposition (1996) (2)
The effect of various buffer-layer structures on the material quality and dislocation density of high composition AlxGa1-xAs laser material grown by metalorganic chemical vapor deposition (1988) (2)
Damage and lattice strain in ion-irradiated Al xGa 1-xAs (1994) (2)
Surface photoabsorption monitoring of the growth of GaAs and InGaAs at 650°C by MOCVD (1997) (2)
Diode Laser Arrays: Strained layer quantum well heterostructure laser arrays (1994) (2)
Insitu Observation of the Formation Dynamics of Nanohelices (2006) (2)
A novel separate lateral confinement quantum well heterostructure laser (2001) (2)
Candidate laser transmitters for the remote sensing of atmospheric water vapor from the surface of Mars (1997) (2)
Effect of design variations on the threshold current density of AlxGa1−xAs separate confinement heterostructure single quantum well lasers (1992) (2)
Intrinsic parameter and modal characteristics of asymmetric cladding ridge waveguide lasers (2006) (2)
Development of stacked multiple bandgap solar cells (1979) (2)
Development of high-brightness high-power fiber laser pump sources (2004) (2)
DISORDER OF AlAs/GaAs SUPERLATTICES BY THE IMPLANTATION AND DIFFUSION OF IMPURITIES. (1983) (2)
A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition (1994) (2)
The engineering research center for compound semiconductor microelectronics (1993) (2)
Stacking and layer disordering of AlxGa1−xAs‐GaAs quantum well heterostructures (1986) (2)
Evolution of Coherent InAs Quantum Dots Above the Coherent Critical Thickness Window by Metalorganic Chemical Vapor Deposition (2001) (2)
A Quantum-Well Laser Model for Circuit Simulation (1989) (2)
Wavelength tunable asymmetric cladding ridge waveguide distributed Bragg reflector lasers (1995) (2)
Growth mechanisms of GaAsP/GaAs heterostructures by metalorganic chemical vapour deposition (1985) (2)
High power 0.98 /spl mu/m InGaAs-GaAs strained layer buried heterostructure lasers (1990) (2)
Decimated Photonic Crystal Defect Cavity Lasers (2011) (2)
Dual wavelength gain guided broad area semiconductor lasers (2010) (2)
Growth , Characterization and Modeling of In • Stripes by Selective-Area MOCVD (2)
High power single lateral mode buried ridge laser with frustrated total internal reflection for spatial filtering (2002) (2)
Phase locked narrow zinc diffused stripe laser arrays (1986) (2)
Selected papers on semiconductor diode lasers (1992) (2)
InGaAs-GaAs strained-layer quantum well heterostructure lasers (1990) (2)
Intersubband selection and sum rules in a patterned inverse quantum dot array (2009) (2)
Electrically Injected Photonic Crystal Light Emitters with Spatially Localized Gain (2006) (2)
Room temperature operation of patterned InGaAs quantum dot lasers fabricated by electron beats lithography and selective area epitaxy (2004) (2)
Observation of apparent inelastic tunneling between Landau levels in superlattices (1989) (2)
A novel separate lateral confinement quantum-well heterostructure laser (2002) (2)
The distributed Bragg pulse shaper: demonstration and model (1999) (1)
Quantum well laser structure (1981) (1)
Threshold and spectral characteristics of quantum dot lasers fabricated by selective area epitaxy (2005) (1)
Distributed Bragg Reflector Lasers (1999) (1)
Optimal Annealing Conditions of InGaAs Films for Selective Area Epitaxy of Quantum Dots by Indium Segregation (2003) (1)
Semiconductor quantum dot devices (2010) (1)
InGaAs-GaAs strained layer lasers: physics and reliability (1991) (1)
Multiple quantum well mixing and index-guided quantum well heterostructure lasers by MeV ion implantation (1991) (1)
InGaAs/GaAs/AlGaAs strained-layer quantum well square ring lasers (1994) (1)
Monolithic Multicolor Solar Conversion (1980) (1)
Selectively grown quantum well active layer in a photonic crystal optical microcavity (2005) (1)
Phase-locked ridge waveguide InGaAs-GaAs-AlGaAs strained-layer quantum well heterostructure laser arrays (1991) (1)
Three-Dimensional Quantization from an Ordered Nanopore Array Diode Laser (2007) (1)
Low-temperature electroluminescence from an ordered nanopore array diode laser (2009) (1)
Performance of ridge waveguide lasers fabricated from highly strained InGaAs-GaAs-AlGaAs quantum wells (1992) (1)
Y-Branch Surface Etched Distributed Bragg Reflector Lasers at 850nm for Optical Heterodyning (2007) (1)
Chapter 8 – STRAINED LAYER QUANTUM WELL HETEROSTRUCTURE LASERS (1993) (1)
Demonstration of a free-space optical interconnect in a CMOS chip (1995) (1)
Integrated optoelectronic devices by selective-area epitaxy (1997) (1)
Temperature Dependence of Carbon Incorporation in Al x Ga 1-x As Grown by Metalorganic Chemical Vapor Deposition (MOCVD) (1994) (1)
High-power InGaAs-GaAs 1064 nm strained-layer lasers by metalorganic chemical vapor deposition (MOCVD) (1993) (1)
IIIA-6 GaAlAs/GaAs MOCVD selective epitaxy for monolithic optical device integration with comples GaAs IC's (1982) (1)
I-2 pulsed room temperature operation of In1-x-GaxP1-zAszdouble heterojunction lasers at high energy (6470 A, 1.916 eV) (1976) (1)
Quantum dot device (2011) (1)
Strained layer quantum well heterostructure lasers (1990) (1)
Ultrafast optical properties of lithographically defined quantum dot amplifiers (2014) (1)
Selective growth of an InGaAs QW active layer in a photonic crystal optical microcavity (2003) (1)
Selective area epitaxy for photonic integrated circuits and advanced devices (2002) (1)
Analysis of interface layers by spectroscopic ellipsometry (2008) (1)
Temperature dependence of ion beam mixing of InGaAs marker layers in GaAs (1993) (1)
Integrated strained-layer photonic devices by selective area epitaxy (1996) (1)
MOCVD OF III-V COMPOUND EPITAXIAL LAYERS. (1986) (1)
Narrowing the linewidth of 852nm diode lasers (2006) (1)
STACKED MULTIPLE-BANDGAP SOLAR CELLS PREPARED BY CVD TECHNIQUES. (1980) (1)
Iso-electronic impurity-induced disordering : AlxGa1-xAs-GaAs/In (1991) (1)
Interface analysis of an AlGaAs multilayer system by using spectroscopic ellipsometry (2006) (1)
On the incorporation of arsenic (As) in GaN films by conventional MOCVD (1997) (1)
Surface emitting lasers for optical clock distribution by selective area epitaxy (2002) (1)
InAs quantum dot growth by APMOCVD (1999) (1)
Reduced scattering rate in nanopore structures (2010) (1)
Reliability of strained-layer InGaAs quantum well heterostructure lasers (1992) (1)
Ion beam mixing characteristics of MOCVD grown InGaAs/GaAs superlattices (1994) (1)
Breaking through the barriers [semiconductor lasers] (1998) (1)
Strained-layer InGaAs-GaAs-AlGaAs buried heterostructure lasers by three-step selective-area metalorganic chemical vapor deposition (1993) (1)
Fabrication and simulation of nanopore optoelectronic devices (2010) (1)
Indium transients in the growth of InGaAs by metal-organic chemical vapor deposition (1988) (1)
Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy (1994) (1)
Experimental determination of the carrier dependence of differential gain, refractive index, and linewidth enhancement factor in strained-layer quantum well lasers (1990) (1)
Strained Layer In GaAs-GaAs Quantum Well Heterostructure Lasers (1990) (0)
Introduction to the issue on optoelectronic materials and processing (1997) (0)
Monolithic serial InGaAs-GaAs-AlGaAs laser diode arrays (1994) (0)
Patterned quantum dot lasers fabricated using electron beam lithography and selective area epitaxial growth (2005) (0)
Announcing a special issue of the IEEE journal of quantum electronics on quantum well heterostructures and superlattices (1987) (0)
Advances in quantum well heterostructure lasers: strained-layer buried heterostructure lasers by selective-area epitaxy (1994) (0)
GaAlAs/GaAs Avalanche Photodetectors (1981) (0)
Drive Voltage Reduction of a GaAs Quantum Well Electroabsorption Waveguide Modulator Obtained with a Displaced p-n Junction (1994) (0)
Illinois Nano EP Seminar Series Spring 2010 - Lecture 8: Quantum Dot and Nanopore Lasers (2011) (0)
Microstructure evolution in low-temperature, ion-implanted Al xGa 1-xAs (1999) (0)
Reactive ion etched corner reflector strained layer InGaAs-GaAs-AlGaAs quantum well lasers (1993) (0)
Deep Level Studies in GaAs-Ga0.5Al0.5As Superlattices Grown by MOCVD (1991) (0)
Nanometer-scale selective epitaxy of InAs quantum dots via indium segregation (2003) (0)
Bandstructure engineering with a two-dimensional patterned quantum dot lattice (2010) (0)
Threshold andSpectral Characteristics ofPatterned QuantumDotLasers Fabricated bySelective AreaEpitaxy (2005) (0)
Lasers with Monolithically Integrated avity Electroabsorption Modulators without Modification of the Active Region (1997) (0)
Controlled Zn Diffusion for LOW Narrow Stripe GaAlAs/GaAs D (1981) (0)
Gain and Loss in Active Waveguides Based on Lithographically Defined Quantum Dots (2014) (0)
Two-Dimensional Hi (1984) (0)
I-3 observations of inhomogeneous or homogeneous line broadening in In1-xGaxP1-zAszdouble heterojunctions operated in external grating cavities (1976) (0)
Monolithic integration of MQW DBR lasers with external cavity electroabsorption modulators without modification of the active region (1997) (0)
Monolithic integration of MQW wavelength tunable DBR lasers with external cavity electroabsorption modulators by selective-area MOCVD (1997) (0)
Visible-Light Laser Oscillation in Indirect- AlxGal -xAs (77 K) (2015) (0)
Patterned quantum dot and nanopore lasers (2010) (0)
Low-threshold narrow-linewidth lnGaAsGaAs ridge-waveguide DBR lasers with first-order surface gratings (1997) (0)
VA-3 Index-guided complementary self-aligned laser arrays by MOCVD (1986) (0)
Asymmetric cladding lnGaAs-GaAs-AiGaAs ridge waveguide distributed Bragg reflector lasers with operating wavelengths of 915 nm-935 nm (1997) (0)
Development of Advanced Laser Diode Sources (1998) (0)
IIIA-8 IR-red GaAs-AlAs superlattice laser monolithically integrated in a yellow-gap cavity (1981) (0)
Narrow linewidth operation in broad area laser diodes (2011) (0)
Broad Area Distributed Gain, Distributed Index Profile GaAlAs Semiconductor Laser Diodes (1991) (0)
High Brightness Lasers using an In-Phase, Coherently Coupled, Output Waveguide Array (2007) (0)
Approaches for electrical injection into photonic crystal nanocavities (2010) (0)
IIIA-1 liquid phase epitaxial (LPE) grown junction In 1-x Ga x P (x ∼ 0.63) laser of wavelength λ ∼ 5900 Å (2.10 eV, 77 K) (1974) (0)
GaN: From selective area to epitaxial lateral overgrowth (1999) (0)
Lasers with nanopatterned active regions (2008) (0)
Physics and applications of intersubband transitions in patterned inverse quantum dot arrays (2008) (0)
Photoluminescence and photoluminescence excitation spectroscopy of in situ Er-doped and Er-implanted GaN films grown by hydride vapor phase epitaxy (1999) (0)
Photocurrent density enhancement of a III-V inverse quantum dot intermediate band gap photovoltaic device (2015) (0)
W-Shaped Diffused Stripe (WDS) GaAs/GaAIAs Double Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition (1982) (0)
WIDE STRIPE SINGLE AND DUAL WAVELENGTH MODE SEMICONDUCTOR DIODE LASERS (2011) (0)
Threshold current density in strained-layer In x Ga 1-x As-GaAs QW Heterostructure Lasers (1992) (0)
Thermal Stability of InGaAs Quantum Dots Under Large Temperature Transients (2004) (0)
InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE (1997) (0)
Towards Attojoule Operation of Semiconductor Quantum well Lasers (2020) (0)
Patterned nanostructure lasers by MOCVD (2014) (0)
Carrier recombination rates in GaAs/AlGaAs and strained InGaAs/GaAs quantum wells under high levels of excitation (1990) (0)
Low-threshold LPE In/sub 1-x'/Ga/sub x'/As/sub z'//In/sub 1-x/Ga/sub x/P/ sub 1-z/As/sub z//In/sub 1-x'/Ga/sub x'/P/sub 1-z'/As/sub z'/ yellow double-heterojunction laser diodes (J<10$sup 4$ A/cm$sup 2$, lambdaapprox. =5850 A, 77 degreeK) (1975) (0)
S trained-Layer Quantum-Well Heterostructure Circular Ring Lasers (1992) (0)
Trap-mediated, site-selective excitation of photoluminescence from multiple Er/sup 3+/ sites in Er-implanted GaN (1998) (0)
INDEX-GUIDED AlGaAs/GaAs VISIBLE GRADED BARRIER QUANTUM WELL LASER DIODES. (1987) (0)
Special Issue Dedication: James J. Coleman (2012) (0)
Metalorganic vapor phase epitaxy of quantum dots (2001) (0)
Time-Resolved Diffraction Studies of Nanoscale Thermal Transport (2007) (0)
Temperature Dependence of Compositional Disordering of Gaas-Alas Superlattices During Mev Kr Irradiation (1990) (0)
Disorder delineated semiconductor waveguides (1990) (0)
Ultra-Fast Optical Signal Encoding and Analysis for Communications and Data Fusion Networks (2000) (0)
InGaAs quantum dot lasers by selective area MOCVD growth (2005) (0)
The Influence Of In On The Performance Of (Al)GaAs Single Quantum Well Lasers (1989) (0)
Anomalous threshold characteristics of thin quantum-well AlGaAs diode lasers (1986) (0)
Narrow Diffused Stripe GaAs/GaAIAs Lasers For High Speed Integrated Optical Transmitters (1982) (0)
In-phase operation of high power, nonplanar periodic laser arrays (1990) (0)
Carrier recombination rates in GaAs and InGaAs quantum-well lasers (1990) (0)
Narrow perpendicular divergence angle QW lasers (1992) (0)
Laser assisted CVD and MOCVD growth of semiconductor films (1989) (0)
Multiple long-wavelength VCSEL arrays for low-cost WDM (1998) (0)
InGaAs/GaAs quantum-well lasers with monolithically integrated intracavity electroabsorption modulators by selective-area MOCVD (1995) (0)
Anniversary workshop speakers: Forty years of ISLC: Laser diode materials, growth, structures, and performance (2016) (0)
S-bend Loss of Depressed Cladding Semiconductor Laser Waveguides (1994) (0)
Session 19 Quantum electronics and compound semiconductor devices — Lasers and heterostructures (1984) (0)
Patterned semiconductor inverted quantum dot photonic devices (2016) (0)
Nanopores and quantum dots by selective area metalorganic chemical vapor deposition (2012) (0)
Zhengping Jiang Quantum Transport in RTD and Atomistic Modeling of Nanostructures Master of Science in Electrical and Computer Engineering (1997) (0)
Characterization of as-grown and ion-implanted GaN by photoluminescence and photoluminescence excitation spectroscopy (1997) (0)
InGaAs-GaAs Strained Layer Well Coupled Laser Array (1994) (0)
III-As pillar arrays by metal-assisted chemical etching for photonic applications (2013) (0)
Analysis of scattering loss and effective index step in asymmetric cladding surface etched distributed bragg reflector lasers (2006) (0)
Dual channel WDM source with monolithically integrated electroabsorption modulators and Y-junction coupler by selective-area MOCVD (1996) (0)
Engineered Quantum Dots for Lasers (2007) (0)
Curved and frustrated index guides for spatial mode control in high power diode lasers (2002) (0)
Very Narrow Linewidth Asy Cladding; InGaAs-GaAs Ridge (1996) (0)
Zhengping Jiang Quantum Transport in RTD and Atomistic Modeling of Nanostructures Master of Science in Electrical and Computer Engineering (1997) (0)
Directed assembly of optoelectronic components using electric fields (1999) (0)
Differential Gain Measurements For Bulk And Quantum Well GRINSCH Lasers (1990) (0)
VIA-1 the switching mechanism in the heterostructure hot-electron diode (1987) (0)
Semiconductor lasers: A choice structure for lightwave communications (1985) (0)
Nanostructure patterned active regions for semiconductor diode lasers (2008) (0)
Microstructure evolution in low-temperature, ion-implanted Al{sub x}Ga{sub 1-x}As. (1999) (0)
Ion damage studies in GaAs/Al{sub 0.6}Ga{sub 0.4}As/GaAs heterostructures (1993) (0)
Indium-Gallium Phosphide-Arsenide - Gallium Arsenide-Phosphide Single Heterojunction Lasers (1975) (0)
Strained layer quantum well lasers (1991) (0)
Room Temperature, CW, Single Mode Laser. (1980) (0)
Amorphization mechanisms in Al{sub x}Ga{sub 1{minus}x}As (1997) (0)
InAs quantum dot and nanowhisker formation by metalorganic chemical vapor deposition in porous materials (2003) (0)
InGaAs strained-layer lasers: a technology survey (1990) (0)
Hot electron deep level transient spectroscopy (1985) (0)
Gain and recovery dynamics of lithographically-defined quantum dot amplifiers (2013) (0)
Ion Damage Production in GaAs/Al 0.6 Ga 0.4 As Heterostructures (1994) (0)
ROOM-TEMPERATURE VISIBLE In//1// minus //xGa//xP//1// minus //z(x less than equivalent to 1, z similar 0. 6) HETEROJUNCTION LASERS. (1976) (0)
Introduction to the Special Issue on Semiconductor Photonic Materials (2008) (0)
InGaAs/GaAs strained-layer quantum well heterostructure phase-locked arrays operating in the in-phase fundamental array mode (1990) (0)
GROWTH AND CHARACTERIZATION OF InP minus Ga//xIn//1// minus //xP//yAs//1// minus //y HETEROSTRUCTURE LASERS. (1979) (0)
Broad Area Graded Barrier Quantum Well Heterostructure Lasers By Metalorganic Chemical Vapor Deposition For High Power Applications (1988) (0)
Asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers with simultaneous, dual-wavelength operation (1999) (0)
QUANTUM WELL LASER STRUCTURE (Invited) (1981) (0)
Spectral Linewidth of MQW DFB Lasers with Intensity-Modulated TM-Polarized Light Injection (1992) (0)
The ordered nanopore array diode laser: Comparing analysis with experiment (2008) (0)
Novel Engineered Compound Semiconductor Heterostructures for Advanced Electronic and Optoelectronic Integrated Circuit Applications. (1996) (0)
1.14 /spl mu/m strained-layer InGaAs-GaAs-InGaP SQW lasers on ternary In/sub 0.03/Ga/sub 0.97/As substrates by metalorganic chemical vapor deposition (1996) (0)
Heterojunction laser operation of GaAs/sub 1-x/P/sub x/:N on NN-pair E/sub NN/ and A-line E/sub N/ transitions near the direct (GAMMA) band edge (1975) (0)
Semiconductor quantum well lasers with nanoscale resonant periodic active layers (2013) (0)
850 nm asymmetric cladding surface etched DBR lasers with narrow spectral linewidth (2006) (0)
Broadband emission from an InGaAs-GaAs-AIGaAs LED with an integrated absorber by selective-area MOCVD (1995) (0)
QUANTUM DOT DEVICES (2011) (0)
Tunable narrow linewidth distributed Bragg reflector lasers (1998) (0)
Semiconductor superlattic photodetectors (1985) (0)
Polarization dependent photoluminescence of elliptical quantum dots defined by lithographic patterning (2011) (0)
Monolithic integration of strained-layer InGaAs/GaAs/AlGaAs lasers with photodiodes by selective-area MOCVD (1995) (0)
Amorphization mechanisms in Al{sub x}Ga{sub 1-x}As. (1997) (0)
Amorphization Mechanisms in Al x Ga 1-x As (1996) (0)
Index-Guided AIGaAs/GaAs Visible Graded Barrier Quantum Well Laser Diodes (1987) (0)
Site-controlled, high density InAs quantum dots by nanoscale selective area epitaxy (2010) (0)
Semiconductor superlattice photodetectors (1986) (0)
MP-B8 phonon contribution to quantum-well and to double-heterostructure laser operation (1980) (0)
s-GaAs Quantum-Well Lasers with Monolithidly Integrated ntracavity Electroab sorption ulators by Selective-Area MOCVD (1996) (0)
Three dimensional confinement in inverted quantum dot nanopore lasers (2012) (0)
Fabrication and characterization of InGaAs-GaAs quantum wire arrays by selective-area metalorganic chemical vapor deposition (1997) (0)
The growth of ultra-thin layer superlattices by metalorganic chemical vapor deposition (1986) (0)
Ion damage studies in GaAs/Al0.6Ga0.4As/GaAs heterostructures (1993) (0)
Nanometer-scale Dots Selective Epitaxy of InAs Quantum via Indium Segregation (2003) (0)
Quantum well heterestrueture lasers (1983) (0)
Semiconductor Laser Diode Arrays by MOCVD (Metalorganic Chemical Vapor Deposition) (1987) (0)
Laser devices by selective-area epitaxy (1997) (0)
Optical heterodyning of narrow-linewidth surface etched distributed Bragg reflector laser diodes (2006) (0)
Novel Engineered Compound Semiconductor Heterostructures for Advanced Electronics Applications (1992) (0)
Site-Selective Photoluminescence Spectroscopy of Er-Implanted Wurtzite Gan Under Various Annealing Conditions (1998) (0)
PHOTOLUMINESCENCE CHARACTERIZATION OF PATTERNED QUANTUM DOTS AND INVERSE QUANTUM DOTS BY AKASH GARG THESIS Submitted in partial fulfillment of the requirements for the degree of Master of Science in Electrical and Computer Engineering (2010) (0)

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