James Logan Merz
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James Logan Merzchemistry Degrees
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(Suggest an Edit or Addition)James Logan Merz's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Formation of self‐assembling CdSe quantum dots on ZnSe by molecular beam epitaxy (1996) (306)
- Optical Properties of Substitutional Donors in ZnSe (1972) (223)
- Time‐resolved optical characterization of InGaAs/GaAs quantum dots (1994) (181)
- Study of zone-folding effects on phonons in alternating monolayers of GaAs-AlAs (1978) (172)
- Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb (1996) (157)
- Pair Spectra and the Shallow Acceptors in ZnSe (1973) (146)
- Pair Spectra and "Edge Emission" in Zinc Selenide (1969) (145)
- Quantum-dot cellular automata : computing with coupled quantum dots (1999) (144)
- Laser-induced noninvasive vascular injury models in mice generate platelet- and coagulation-dependent thrombi. (2001) (140)
- Visible luminescence from semiconductor quantum dots in large ensembles (1995) (133)
- Molecular‐beam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs (1994) (127)
- Quantum-dot cellular automata: Review and recent experiments (invited) (1999) (127)
- Selective excitation of the photoluminescence and the energy levels of ultrasmall InGaAs/GaAs quantum dots (1994) (117)
- Structural and optical properties of self‐assembled InGaAs quantum dots (1994) (115)
- Temperature effects on the radiative recombination in self-assembled quantum dots (1996) (104)
- Quantum-Dot Cellular Automata: Line and Majority Logic Gate (1999) (103)
- Investigation of reactive ion etching induced damage in GaAs–AlGaAs quantum well structures (1988) (100)
- Isoelectronic Oxygen Trap in ZnTe (1968) (88)
- Molecular‐beam‐epitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation (1986) (80)
- New photoluminescence effects of carrier confinement at an AlGaAs/GaAs heterojunction interface (1985) (79)
- Near-field magnetophotoluminescence spectroscopy of composition fluctuations in InGaAsN. (2001) (78)
- Dynamics of ripening of self-assembled II-VI semiconductor quantum dots (1998) (74)
- Ordering effects in Raman spectra of coherently strained GaAs 1 − x N x (1997) (74)
- GaSb/AlSb multiquantum well structures: molecular beam epitaxial growth and narrow-well photoluminescence (1983) (73)
- Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum‐well ridge‐waveguide lasers (1994) (73)
- Self-electro-optic device based on a superlattice asymmetric Fabry-Perot modulator with an on/off ratio >~ 100:1 (1990) (70)
- Beam divergence of the emission from double-heterostructure injection lasers (1973) (69)
- GaAs Double Heterostructure Lasers Fabricated by Wet Chemical Etching (1976) (66)
- Staggered‐lineup heterojunctions as sources of tunable below‐gap radiation: Experimental verification (1984) (63)
- ASYMMETRIC STARK SHIFT IN ALXIN1-XAS/ALVGA1-YAS SELF-ASSEMBLED DOTS (1998) (61)
- Study of intensity pulsations in proton‐bombarded stripe‐geometry double‐heterostructure AlxGa1−xAs lasers (1979) (60)
- Excitonic Molecule Bound to the Isoelectronic Nitrogen Trap in GaP (1969) (60)
- Status of point defects in HgCdTe (1985) (58)
- Selective etching characteristics of HF for AlxGa1-xAs/GaAs (1985) (57)
- Volmer–Weber and Stranski–Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm (2000) (56)
- Excited-state radiative lifetimes in self-assembled quantum dots obtained from state-filling spectroscopy (1999) (55)
- Effects of carrier confinement in graded AlGaAs/GaAs heterojunctions (1984) (54)
- Normally‐off high‐contrast asymmetric Fabry–Perot reflection modulator using Wannier–Stark localization in a superlattice (1990) (54)
- GaAs integrated optical circuits by wet chemical etching (1979) (54)
- Taper couplers for GaAs−AlxGa1−xAs waveguide layers produced by liquid phase and molecular beam epitaxy (1975) (48)
- Low temperature photoluminescence of detector-grade HgI2☆ (1983) (48)
- Exciton droplets in zero dimensional systems in a magnetic field (1997) (47)
- Simultaneous achievement of low insertion loss, high contrast and low operating voltage in asymmetric Fabry-Perot reflection modulator (1991) (45)
- Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers (1991) (45)
- Experimental determination of Auger capture coefficients in self-assembled quantum dots (2000) (39)
- Experimental demonstration of quantum-dot cellular automata (1998) (38)
- Practical issues in the realization of quantum-dot cellular automata (1996) (38)
- Raman scattering and zone‐folding effects for alternating monolayers of GaAs‐AlAs (1977) (37)
- Nonselective etching of GaAs/AlGaAs double heterostructure laser facets by Cl2 reactive ion etching in a load‐locked system (1987) (37)
- Local optical spectroscopy of self-assembled quantum dots using a near-field optical fiber probe to induce a localized strain field (1998) (35)
- Dry etch induced damage in GaAs investigated using Raman scattering spectroscopy (1989) (35)
- Characterization of recombination processes in multiple narrow asymmetric coupled quantum wells based on the dependence of photoluminescence on laser intensity (1992) (34)
- Effect of dislocation scattering on the transport properties of InN grown on GaN substrates by molecular beam epitaxy (2006) (34)
- Focused ion beam channeling effects and ultimate sizes of GaAlAs/GaAs nanostructures (1990) (33)
- Integrated GaAs‐AlxGa1−xAs injection lasers and detectors with etched reflectors (1977) (32)
- Nanoindentation and near-field spectroscopy of single semiconductor quantum dots (2004) (31)
- Rapid thermal alloyed ohmic contact on inp (1987) (31)
- Implantation enhanced interdiffusion in GaAs/GaAlAs quantum structures (1989) (31)
- Angled etching of GaAs/AlGaAs by conventional Cl2 reactive ion etching (1988) (31)
- Spectroscopic characterization of the evolution of self-assembled CdSe quantum dots (1998) (30)
- Reduced quantum efficiency of a near‐surface quantum well (1993) (29)
- Influence of N interstitials on the electronic properties of GaAsN alloys (2009) (29)
- Shallow N acceptor in N+‐implanted ZnSe (1982) (29)
- Preparation and Optical Properties of AlxGa1−xP (1968) (29)
- Order–disorder transition in epitaxial ZnSnP2 (1999) (28)
- Laser beam heating and transformation of a GaAs‐AlAs multiple‐quantum‐well structure (1984) (27)
- Loss measurements in GaAs and AlxGa1−xAs dielectric waveguides between 1.1 eV and the energy gap (1976) (27)
- Comparison of optical losses in dielectric-apertured vertical-cavity lasers (1996) (26)
- Electric‐field‐induced absorption changes in triangular quantum wells grown by pulsed‐beam molecular‐beam‐epitaxy technique (1990) (26)
- Quantum-dot cellular automata (1999) (25)
- Continuous‐wave photoluminescence excitation spectra of multiple narrow‐stepped quantum wells: Evidence for saturation of interface traps (1992) (25)
- Folded‐cavity transverse junction stripe surface‐emitting laser (1989) (24)
- Observation of excitation transfer among neighboring quantum dots (2001) (24)
- Luminescence efficiency of near‐surface quantum wells before and after ion‐gun hydrogenation (1993) (23)
- COMMENT ON: DYNAMICS OF RIPENING OF SELF-ASSEMBLED II-VI SEMICONDUCTOR QUANTUM DOTS (1999) (23)
- Effect of layer thickness variations on the performance of asymmetric Fabry–Perot reflection modulators (1992) (23)
- Electrically Pumped CdZnSe/ZnSe Blue-Green Vertical-Cavity Surface-Emitting Lasers (1995) (23)
- Open tube diffusion of Zn into AlGaAs and GaAs (1983) (23)
- IMPLANTATION OF Bi INTO GaP. II. CHANNELING STUDIES. (1970) (23)
- Photoluminescence of Ion‐Implanted Oxygen in ZnTe (1971) (23)
- Electron‐beam‐induced current investigations of cw laser‐annealed silicon (1980) (22)
- Luminescence study of rapid lamp annealing of Si‐implanted InP (1985) (22)
- Analysis and optimization of graded‐index separate‐confinement heterostructure waveguides for quantum well lasers (1991) (22)
- Temperature‐dependent threshold and modulation characteristics in InGaAs/GaAs quantum‐well ridge‐waveguide lasers (1995) (22)
- Quantum-dot cellular automata: introduction and experimental overview (2001) (22)
- Fabrication of high-aspect-ratio InP-based vertical-cavity laser mirrors using CH4/H2/O2/Ar reactive ion etching (1997) (22)
- Optical spectra of wide band gap BexZn1−xSe alloys (1999) (21)
- Laser beam heating and high temperature band‐to‐band luminescence of GaAs and InP (1983) (21)
- Saturable optical absorption of the deep Te-complex center in Al 0.4 Ga 0.6 As (1979) (21)
- Spectroscopic characterization of band discontinuity in free‐standing CdZnS/ZnS strained layer superlattices (1994) (20)
- Making quantum wires and boxes for optoelectronic devices (1991) (20)
- Ultralow threshold strained InGaAs-GaAs quantum well lasers by impurity-induced disordering (1991) (20)
- High-spatial-resolution near-field photoluminescence and imaging of whispering-gallery modes in semiconductor microdisks with embedded quantum dots (2008) (20)
- A functional cell for quantum-dot cellular automata (1998) (19)
- 1.0-mA-threshold uncoated lasers by impurity-induced disordering (1993) (19)
- Suppression of higher-order transverse modes in vertical-cavity lasers by impurity-induced disordering (1995) (19)
- Low Loss AlxGa1-xAs Waveguides Grown by Molecular Beam Epitaxy (1976) (19)
- Radiative recombination in doped AlGaAs/GaAs heterostructures (1990) (19)
- PHOTOLUMINESCENCE OF OXYGEN IN ZnTe INTRODUCED BY ION IMPLANTATION. (1969) (19)
- State-filling and magneto-photoluminescence of excited states in InGaAs/GaAs self-assembled quantum dots☆ (1997) (18)
- Iron redistribution and compensation mechanisms in semi‐insulating Si‐implanted InP (1989) (18)
- Fabrication of low-threshold InGaAs/GaAs ridge waveguide lasers by using in situ monitored reactive ion etching (1991) (17)
- Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells (2009) (17)
- Optically addressed spatial light modulators by MBE-grown nipi MQW structures. (1989) (17)
- Lasing of whispering-gallery modes in asymmetric waveguide GaInP micro-disks with InP quantum dots (2009) (17)
- Gratings for integrated optics by electron lithography. (1974) (17)
- Effect of Uniaxial Stress on the Binding to Isoelectronic Impurities in GaP (1972) (17)
- Implantation of Bi into GaP III. Hot-Implant Behavior (1971) (17)
- Ga–In intermixing, intrinsic doping, and Wigner localization in the emission spectra of self-organized InP/GaInP quantum dots (2016) (17)
- Optical study of GaAs/GaAlAs quantum structures processed by high energy focused ion beam implantation (1990) (17)
- Luminescence and optical absorption of implanted nitrogen in GaP (1971) (17)
- Measuring linear polarization of photoluminescence and photoluminescence excitation using a photoelastic modulation technique (1992) (16)
- Infrared spectroscopy of ZnSiN2 single-crystalline films on r-sapphire (2000) (16)
- Excitonic molecule bound to the isoelectronic trap nitrogen in gallium phosphide (1969) (16)
- Control of Wigner localization and electron cavity effects in near-field emission spectra of In(Ga)P/GaInP quantum-dot structures (2018) (16)
- Low‐threshold high‐efficiency high‐yield impurity‐induced layer disordering laser by self‐aligned Si‐Zn diffusion (1990) (16)
- Very-low-threshold, strained In/sub y/Ga/sub 1-y/As-GaAs quantum-well lasers defined by impurity-induced disordering (1991) (16)
- Near-field magneto-photoluminescence of quantum-dot-like composition fluctuations in GaAsN and InGaAsN alloys (2004) (15)
- Electronically active defects in cw beam‐annealed Si. II. Deep‐level transient spectroscopy (1984) (15)
- The effects of V/III ratio and growth temperature on the electrical and optical properties of InP grown by low-pressure metalorganic chemical vapor deposition (1984) (15)
- Radical beam/ion beam etching of GaAs (1988) (15)
- Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy (1986) (15)
- Surface photovoltage and modulation spectroscopy of E- and E+ transitions in GaNAs layers (2014) (15)
- Band‐to‐band luminescence of ion‐implanted InP after rapid lamp annealing (1984) (15)
- ion implantation of bismuth into GaP. I. photoluminescence (1970) (15)
- Effect of V/III variation on the optical properties of GaAs and AlxGa1−xAs grown by metalorganic chemical vapor deposition (1983) (15)
- Lasing of whispering‐gallery modes in GaInP waveguide micro‐discs and rings with InP quantum dots (2011) (15)
- Luminescence investigation of copper diffusion into cadmium telluride (1986) (14)
- Scalable etched-pillar, AlAs-oxide defined vertical cavity lasers (1996) (14)
- Photoluminescence study of lateral carrier confinement and compositional intermixing in (Al,Ga)Sb lateral superlattices (1992) (14)
- Effect of rapid thermal annealing for the compositional disordering of Si‐implanted AlGaAs/GaAs superlattices (1987) (14)
- Interaction mechanisms of near‐surface quantum wells with oxidized and H‐passivated AlGaAs surfaces (1994) (14)
- Nuclear microanalysis of oxygen concentration in liquid‐phase epitaxial gallium phosphide (1973) (14)
- Closed-tube diffusion of silicon in GaAs from sputtered silicon film (1986) (13)
- Low-voltage superlattice asymmetric Fabry-Perot reflection modulator (1991) (13)
- Lasing characteristics of a continuous‐wave operated folded‐cavity surface‐emitting laser (1990) (13)
- O-dimensional-induced optical properties in self-assembled quantum dots (1994) (13)
- Low‐threshold InGaAs/GaAs strained‐layer ridge waveguide surface emitting lasers with two 45° angle etched internal total reflection mirrors (1991) (13)
- Quantum-memory effects in the emission of quantum-dot microcavities. (2014) (12)
- Near‐field scanning optical microscopy of colloidal CdSe nanowires (2010) (12)
- Laterally injected low-threshold lasers by impurity-induced disordering (1991) (12)
- Luminescence study of copper‐implanted and rapid‐thermal‐annealed cadmium telluride (1988) (12)
- Deep levels in ion‐implanted Si after beam annealing (1982) (12)
- Optically controlled reflection modulator using GaAs-AlGaAs n-i-p-i/multiple-quantum-well structures. (1989) (12)
- GaAs double-heterostructure photodetectors (1977) (12)
- Low‐threshold InGaAs/GaAs strained layer single quantum well lasers with simple ridge waveguide structure (1991) (11)
- Study of tunneling transport of carriers in structures with an InGaN/GaN active region (2010) (11)
- Luminescence investigations of laser‐annealed Si (1981) (10)
- Design and fabrication of ridge waveguide folded-cavity in-plane surface-emitting lasers (1992) (10)
- Self-organized growth, ripening, and optical properties of wide-bandgap II–VI quantum dots (1998) (10)
- Luminescence spectroscopy of InAs self-assembled quantum dots (1997) (10)
- Behavior of SiNx films as masks for Zn diffusion (1987) (10)
- Flash annealing of copper and krypton ion implants in cadmium telluride (1985) (10)
- Effects of growth temperature on optical and deep level spectroscopy of high‐quality InP grown by metalorganic chemical vapor deposition (1985) (10)
- Wigner molecules and charged excitons in near-field magnetophotoluminescence spectra of self-organized InP/GaInP quantum dots (2017) (10)
- Optical properties of disordered GaAs/(Al,Ga)As distributed Bragg reflectors (1994) (10)
- Monolithically integrated transverse-junction-stripe laser with an external waveguide in GaAs/AlGaAs (1989) (9)
- Selective Zn diffusion in n-GaAs with a sputtered Si mask at 650°C (1986) (9)
- Luminescence study of rapid thermal annealing of ion implantation damage in cadmium telluride (1986) (9)
- Long‐term and thermal stability of hydrogen ion‐passivated AlGaAs/GaAs near‐surface quantum wells (1995) (9)
- Disordering of CdZnSe/ZnSe Strained Layer Superlattices by Ion Implantation (1995) (9)
- Influence of Si–N complexes on the electronic properties of GaAsN alloys (2009) (9)
- Molecular States of Electrons: Emission of Single Molecules in Self-Organized InP/GaInP Quantum Dots (2012) (9)
- Application of thin silicon films to closed‐tube Si and Zn diffusion in GaAs and AlxGa1−xAs (1988) (9)
- The effect of band-tails on the design of GaAs/AlGaAs bipolar transistor carrier-injected optical modulator/switch (1989) (9)
- Study of surface stoichiometry and luminescence efficiency of near‐surface quantum wells treated by hydrogen ions and atomic hydrogen (1994) (9)
- Donor-acceptor pair lines in ZnSe: An addendum (1974) (8)
- Photoinduced intersubband absorption in barrier doped multi-quantum-wells (1990) (8)
- Quasi-ordering of composition fluctuations and their interaction with lattice imperfections in an optical spectra of dilute nitride alloys (2016) (8)
- Study of hydrogenation on near‐surface strained and unstrained quantum wells (1994) (8)
- Alternate‐monolayer single‐crystal GaAs‐AlAs optical waveguides (1977) (8)
- Growth and characterizations of InP self-assembled quantum dots embedded in InAIP grown on GaAs substrates (2001) (8)
- Optical properties of quantum structures fabricated by focused Ga+ ion beam implantation (1991) (8)
- Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks (1992) (8)
- Analysis and optimization of quantum‐well thickness for GaAs/AlGaAs and InGaAs/GaAs/AlGaAs quantum‐well lasers (1992) (8)
- Rapid Thermal Annealing And Solid Phase Epitaxy Of Ion Implanted InP (1986) (8)
- Fabrication and optical properties of photonic crystals based on opal-GaP and opal-GaPN composites (2003) (8)
- The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed (2006) (8)
- Optically pumped CdZnSe/ZnSe blue‐green vertical cavity surface emitting lasers (1995) (8)
- The Use of Semiconductors Doped with Isoelectronic Traps in Scintillation Counting (1968) (8)
- Use of independently controlled Cl radical and Ar ion beams for anisotropic chemically enhanced etching of GaAs (1988) (8)
- Low temperature photoluminescence of HgI2 (1981) (8)
- Magneto-luminescence study of quantum wire arrays in (Al,Ga)As serpentine superlattice structures (1993) (8)
- Effect of growth temperature on the photoluminescent spectra of undoped AlGaAs grown by metalorganic-chemical vapor deposition (1983) (7)
- Highly selective reactive ion etch process for InP‐based device fabrication using methane/hydrogen/argon (1993) (7)
- Correlation of Rutherford Backscattering and Electrical Measurements on Si Implanted InP Following Rapid Thermal and Furnace Annealing (1985) (7)
- Effects of impurity‐free and impurity‐induced disordering on the optical properties of GaAs/(Al,Ga)As distributed Bragg reflectors (1994) (7)
- Rapid Thermal Anneal and Furnace Anneal of Silicon and Beryimlum Implanted Gallium Arsenide (1985) (7)
- Silicon diffusion into AlxGa1−xAs (x=0–0.4) from a sputtered silicon film (1987) (7)
- Study of temperature dependent hydrogenation on near‐surface strained quantum wells (1993) (7)
- Molecular Beam Epitaxial Growth of (Al,Ga)As Tilted Superlattices on Vicinal GaAs (110) (1991) (7)
- The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes (2010) (7)
- Asymmetric Fabry–Perot reflection modulators using red‐ and blue‐shifted electroabsorption effects (1990) (7)
- Observation of increased photoluminescence decay time in strain-induced quantum-well dots (1993) (7)
- Self‐aligned Si‐Zn diffusion into GaAs and AlGaAs (1988) (7)
- Optical confinement in ZnSe-based quantum well structure using impurity induced disordering (1994) (6)
- Dual Beam Laser: A Gaas Double-Cavity Laser with Branching Output Waveguides (1978) (6)
- Raman Scattering as a Temperature Frobe for Laser Heating of Si (1982) (6)
- A tunable quantum well infrared detector based on photon-assisted resonant tunnelling (1990) (6)
- Vertical cavity lasers with Zn impurity-induced disordering (IID) defined active regions (1996) (6)
- Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys (2003) (6)
- Magneto-optical properties of InAs monolayers and InyAl1−yAs self-assembled quantum dots in Ga(Al)As matrices (1996) (6)
- Many-body effects in highly acceptor-doped GaAs/Al x Ga 1-x As quantum wells (1998) (6)
- Impurity-induced disordering of AIGalnAs quantum wells by low temperature Zn diffusion (1996) (5)
- High-efficiency vertical-cavity lasers and modulators (1991) (5)
- Luminescence anisotropy of InGaP layers grown by liquid phase epitaxy (2004) (5)
- Electronically active defects in cw beam‐annealed Si. I. Electron‐beam‐induced current (1984) (5)
- Effects of bond relaxation on the martensitic transition and optical phonons in spontaneously ordered GaInP 2 (2003) (5)
- Impurity induced disordering of CdZnSe/ZnSe strained layer superlattices by germanium diffusion (1993) (5)
- II-VI heterostructures obtained by encapsulation of colloidal CdSe nanowires by molecular beam epitaxy deposition of ZnSe (2011) (5)
- Low-threshold lasers fabricated by alignment-free impurity induced disordering (1993) (5)
- Anomalous magnetophotoluminescence as a result of level repulsion in arrays of quantum dots (1997) (5)
- Effect of ion induced damage on carrier lifetimes in strained CdZnSe/ZnSe quantum wells (2000) (5)
- Low‐threshold InGaAs/GaAs/AlGaAs quantum‐well laser with an intracavity optical modulator by impurity‐induced disordering (1993) (5)
- A photoconductivity study of the excitons in doped and undoped {GaAs}/{AlGaAs} quantum wells (1990) (5)
- Effect of hydrogen passivation on Be‐doped AlGaAs/GaAs quantum wells (1996) (5)
- Characterization of GaAs/AlGaAs heterojunctions by optical detection of cyclotron resonance (1990) (5)
- The Optoelectronics Joint Research Laboratory: Light Shed on Cooperative Research in Japan. (1986) (5)
- Observation of a martensitic transition in the Raman spectra of spontaneously ordered GaInP alloys (1998) (5)
- Dynamics of free and bound excitons in center-doped GaAs/AsGaAs quantum wells (1991) (4)
- Unique top-driven low-threshold lasers by impurity-induced disordering (1993) (4)
- Photoluminescence blueshift induced by reactive ion etching of strained CdZnSe/ZnSe quantum well structures (1996) (4)
- A new quasiparticle bound to the isoelectronic trap nitrogen in GaP: A rebuttal (1970) (4)
- Passivation of InGaAs/InP surface quantum wells by ion‐gun hydrogenation (1994) (4)
- Novel approaches in 2 and 3 dimensional confinement structures : processing and properties (1990) (4)
- Optical measurements of single CdTe self-assembled quantum dots grown on ZnTe/GaSb (2011) (4)
- cw laser‐annealing behavior of Se+‐implanted InP investigated by ellipsometry (1983) (4)
- Photoluminescence of AlGaAs:Ge and GaAs:Ge and Sn grown by liquid‐phase epitaxy (1985) (4)
- Impact ionization of free and bound excitons in AlGaAs/GaAs quantum wells (1992) (4)
- Temporal cross-section for carrier capture by self-assembled quantum dots (2000) (4)
- Implantation induced changes in quantum well structures (1993) (4)
- Exciton localisation in InGaAsN and GaAsSbN observed by near-field magnetoluminescence and scanning optical microscopy (NSOM) (2004) (4)
- Characterization of 2D-photonic crystal nanocavities by polarization-dependent photoluminescence (2005) (4)
- Fabrication and characterization of ZnSe/GaAs heterostructure bipolar transistors grown by molecular beam epitaxy (1992) (4)
- Sputtered silicon as a new etching mask for GaAs devices (1986) (3)
- Enhanced exciton binding energy in InAs monolayers grown on (311)A GaAs substrates (1996) (3)
- Hot-Carrier Effects on Optical Properties of GaAs/Al x Gai 1-x As Quantum Wells (1989) (3)
- The use of III-V compounds for integrated optical circuits (1982) (3)
- The shallow Si donor confined in a {GaAs}/{AlGaAs} quantum well (1992) (3)
- Vibration Study of Nitrogen Incorporation in InGaAsN Alloys (2001) (3)
- CW Laser Annealing of InP (1984) (3)
- MEASUREMENT OF FIELD-INDUCED REFRACTIVE INDEX VARIATION IN GAAS/ALGAAS SUPERLATTICE USING MONOLITHIC FABRY-PEROT ETALON (1991) (3)
- Non-Radiative Recombination via Deep Level Defects in Undoped GaAs/AlGaAs Quantum Wells (1993) (3)
- Self-assembled growth of II-VI quantum dots (1997) (3)
- Single dot near‐field spectroscopy for photonic crystal microcavities (2005) (3)
- Effects of a hot two-dimensional electron gas on optical properties of modulation-doped GaAs/AlGaAs heterostructures (1992) (3)
- Quantum Hall regime in emission spectra of single self-organized InP/GaInP quantum dots (2010) (3)
- Monolithic Integration Of Optical Sources And Detectors (1981) (3)
- Quenched-In Defects in CW Laser-Annealed Si (1981) (3)
- Focused Ion Beam Implantation of GaAs-GaAlAs Quantum Well Structures (1988) (3)
- Anisotropy control in the reactive ion etching of InP using oxygen in methane/hydrogen/argon (1994) (3)
- Fresnel analysis of effective mirror reflectivity in folded-cavity in-plane surface-emitting lasers (1993) (3)
- Spectroscopic study of radiative recombinations in GaAs/AlGaAs heterostructures (1991) (2)
- Optical studies of acceptor centre doped GaAsAlGaAs quantum wells (1996) (2)
- Spatially selective excitation of shallow acceptors in GaAs/AlxGa1−xAs quantum wells (1990) (2)
- Integrated Optoelectronic Devices For High-Speed Ic Interconnects (1984) (2)
- Optical and transport studies of highly acceptor doped GaAs/AlGaAs quantum wells (1996) (2)
- Temperature dependent effects on luminescence polarization and recombination lifetime in serpentine superlattice quantum wire arrays (1995) (2)
- Ion induced damage in strained CdZnSe/ZnSe quantum well structures (1997) (2)
- Picosecond Dynamics of Exciton Capture, Emission and Recombination at Shallow Impurities in Center-Doped AlGaAs/GaAs Quantum Wells (1992) (2)
- Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy (2018) (2)
- Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk (2017) (2)
- Comparison of cw laser‐annealed and electron‐beam annealed Si (1981) (2)
- Spectroscopic Studies of the Effect of Confinement on Defect States in GaAs/AlGaAs Quantum Wells (1991) (2)
- Very low‐voltage MBE‐grown asymmetric Fabry‐Perot reflection modulator based on superlattice Wannier‐Stark localization (2008) (2)
- Photoinduced intersubband absorption in n-type well- and barrier-doped quantum wells (1992) (2)
- Recent Results on ZnSe-Based Vertical-Cavity Surface Emitting Lasers Operating in the Blue (1995) (2)
- Infrared reflectivity spectroscopy of optical phonons in short-period AlGaN/GaN superlattices (2007) (2)
- Near-field scanning magneto-optical spectroscopy of Wigner molecules (2016) (2)
- Demonstration of strong saturation of traps in multiple, narrow, slightly asymmetric coupled quantum wells (1993) (2)
- Comment on ``Phonon modes in spontaneously ordered GaInP 2 studied by micro-Raman scattering measurements'' (2001) (2)
- Temperature dependence of exciton-capture at impurities in GaAs/AlxGa(1-x) As quantum wells (1993) (2)
- Mechanical Interaction in Near-Field Spectroscopy of single Semiconductor Quantum Dots. (2002) (2)
- Time Resolved Measurements of Radiative Recombination in GaAs/AIGaAs Heterostructures (1989) (2)
- Wigner Localization and Whispering Gallery Modes of Electrons in Quantum Dots (2018) (2)
- High-temperature pulsed operation of InGaAsP/InP surface emitting lasers (1991) (2)
- Quantum Wires and Dots Made by Man and by God: A Peek into the Optics Toolbox! (1995) (2)
- Reduced threshold bottom emitting vertical cavity lasers by AlAs oxidation (1995) (2)
- Self-Assembled CdTe Quantum Dots Grown on ZnTe/GaSb (2010) (2)
- Photonics For Integrated Circuits And Communications (1985) (2)
- Intrinsic two-hole transitions demonstrating the localization effects due to interface roughness (1991) (2)
- Effects of localization on optical spectra for shallow acceptors in center-doped GaAs/AlGaAs multiple quantum wells (1992) (2)
- Disordering induced by impurity diffusion in ZnSe‐based superlattices and optical waveguides fabricated by disordering (1993) (2)
- Disorder Induced IR Anomaly in Hexagonal AlGaN Short-Period Superlattices and Alloys (1999) (1)
- omparison of Optical Losses i ec tric- Apertured Vertical- Cavity (1996) (1)
- Lasing of InP/AlInAs quantum dots in AlInAs microdisk cavity (2016) (1)
- Electrochemical Profiling of Ion‐Implanted InP (1987) (1)
- Effect of Si Implantation and Rapid Thermal Annealing on GaAs/AlGaAs Superlattice Disordering. (1986) (1)
- Two electron transitions of the exciton bound at the Si Donor confined in GaAs/AlxGa1-xAs quantum wells (1994) (1)
- The characteristics of photoluminescence at GaAs/AlGaAs interface (1988) (1)
- Luminescence enhancement of InGaAs/InP surface quantum wells by room‐temperature ion‐gun hydrogenation (1994) (1)
- Evidence for cw saturation of interface traps in multiple narrow stepped quantum wells (1992) (1)
- Processing And Performance Of Guided-Wave Devices In GaAs/AℓGaAs (1984) (1)
- Decay Measurements of Free and Bound Exciton Recombination in Doped GaAs/GaAIAs Quantum Wells (1989) (1)
- Selective Double Diffusion of Zn and Si into GaAs Using Sputtered Si Masks (1986) (1)
- Shake-up intersubband transitions observed in GaAs/AlGaAs quantum wells (1995) (1)
- Strong Photon-Exciton Coupling in the Near-Field Luminescence of Semiconductor Quantum Dots (2000) (1)
- Low temperature impurity-induced disordering of AlGaInAs/InP quantum wells for long wavelength optoelectronic applications (1995) (1)
- Reactive ion etcher self-bias voltage regulator (1993) (1)
- Radiative recombination in modulation-doped GaAs/AlGaAs heterostructures in the presence of an electric field (1993) (1)
- Lateral Coupling of Self-Assembled Quantum Dots Studied by Near-Field Spectroscopy (1999) (1)
- Summary Abstract: Growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation (1986) (1)
- Some evidences of ordering in InGaP layers grown by liquid phase epitaxy (2003) (1)
- III-V Heterostructure Devices For Integrated Optics (1979) (1)
- Excitons Bound at Shallow Impurities in GaAs/AlGaAs Quantum Wells with Varying Doping Level (1992) (1)
- Dispersion in Bound Exciton Binding Energy via Coupling to Interface Localization Potentials in GaAs/AIGaAs Quantum Wells (1993) (1)
- Quantum-dot-like composition fluctuations in near-field magneto-photoluminescence spectra of InGaAsN alloys (2002) (1)
- High-contrast Self-linearized Optical Modulation Of A Seed Based On A Normally-on Asymmetric Fabry-Perot Modulator With Record Combined Characteristics (1992) (1)
- Optical Detection of Cyclotron Resonance in Serpentine Superlattice Quantum-Wire Arrays (1993) (1)
- Optical spectroscopy of MBE grown quantum wells at various acceptor doping levels (1997) (1)
- Photoluminescence Properties of Graded Composition MgxZn1−xSe Crystals (1989) (1)
- Loss measurement in p‐type GaAs dielectric waveguides using Raman scattering (1979) (1)
- Ion-Implantation Getiering of Impurities in CdTe (1989) (1)
- Self-selective formation of organic masks for methane/hydrogen reactive ion etching of InP (1992) (1)
- Luminescence polarization anisotropy in (Al,Ga)As serpentine quantum wire arrays (1992) (1)
- Polarization anisotropy in the photoluminescence from InGaP layers grown by liquid phase epitaxy (2004) (1)
- Effects of bond relaxation on the martensitic transition and optical phonons effects of in spontaneously ordered GaInP2 (2003) (1)
- Impurity induced disordering of OMVPE-grown ZnSe/ZnS strained layer superlattices by germanium diffusion (1994) (1)
- Interaction of hydrogen ions with oxidized GaAs(100) and AlAs(100) surfaces (1996) (1)
- Near-Field Scanning Optical Microscopy of Phase Separation Effects in Dilute Nitride Alloys. (2004) (1)
- Spectroscopy studies of highly acceptor doped GaAs/AlGaAs quantum wells (1995) (1)
- Raman Scattering and Luminescence Study of Rapid Annealing and Laser Irradiation Effects in Ion Implanted InP (1983) (1)
- Exciton-capture mechanism at impurities in GaAs/AlxGa(1−x)As quantum wells (1994) (1)
- Luminescence of Si-Implanted InP After Rapid Thermal Annealing (1984) (1)
- VIA-1 staggered-lineup heterojunctions as sources of tunable below-gap radiation: Experimental verification (1984) (1)
- Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells (1993) (0)
- Optoelectronics in the People's Republic of China. (1986) (0)
- Observation of higher confined exciton states in serpentine superlattices by linear polarized excitation spectroscopy (1993) (0)
- Intrinsic Luminescence of GaAs/AIGaAs Heterojunctions in a Transverse Electric Field (1989) (0)
- Photoinduced intersubband absorption in n-doped quantum wells (1992) (0)
- Evaluation of the etch depth dependence of three‐dimensional confinement in strain‐induced quantum well dot structures (1992) (0)
- Impurity Induced Disordering for Improved Vertical Cavity Lasers (1995) (0)
- Novel excitonic transitions in n-type GaAs/AlGaAs quantum wells (1995) (0)
- Luminescence Study for Band Discontinuity in Free-Standing CdZnS/ZnS Strained Layer Multi-Quantum Wells (1993) (0)
- ORDERED VERSUS DISORDERED InGaP LAYERS GROWN BY LIQUID PHASE EPITAXY (2001) (0)
- VIA-5 deep levels in ion-implanted Si after beam annealing (1981) (0)
- Summary Abstract: Selective‐area epitaxy of GaAs through silicon dioxide windows by molecular beam epitaxy (1986) (0)
- Strained Ingaas-gaas Quantum Well Lasers By Impurity-induced Disordering With Very Low Threshold and Moderate Blue-shift (1991) (0)
- WP-B1 optical absorption and saturation of the deep Te-complex center in AlxGa1-xAs (1978) (0)
- Evidence for strong saturation of interface traps in multiple narrow slightly asymmetric coupled quantum wells (1992) (0)
- Effects of dopants on disordering of AlGaAs-GaAs superlattice by zinc diffusion (1986) (0)
- Hydrogen ion treatments of oxidized GaAs(100) and AlGaAs(100) surfaces: surface stoichiometry and electronic properties (1996) (0)
- Novel processing techniques for optoelectonic devices and their integration (1992) (0)
- Optical Investigations of the Recombination Processes in Laser-Annealed and Thermally-Annealed Semiconductors. (1981) (0)
- tudy of the Surface Cleaning Effects to the InGaAs Quantum Well Wires by Atomic Force Microscopy and Photoluminescence Spectroscopy (1992) (0)
- Non-Radiative Recombination in Irradiated GaAs/AlGaAs Multiple Quantum Wells (1995) (0)
- The electronic structure of a shallow acceptor and its bound exciton confined in GaAs/AlGaAs quantum wells (1993) (0)
- P-type Conduction in Bulk ZnSe by Nitrogen Ion-Implantation (1991) (0)
- Novel processing techniques for optoelectronic devices and their integration (Invited Paper) (1992) (0)
- Long lived photoexcited electron-hole pairs in modulation doped GaAs/AlGaAs quantum wells studied by intersubband spectroscopy (1994) (0)
- Radiative processes in quantum-confined structures (1991) (0)
- Photoconductivity investigation of the excitonic Auger recombination in GaAs/AlGaAs quantum wells (1994) (0)
- rder Transverse Modes in Vertical-Cavity Lasers by Impurity-Induce Disordering (1995) (0)
- The Effects of Confinement on the Be-Acceptor in Narrow GaAs/AlGaAs Quantum Wells (1990) (0)
- Infrastructure Needs for R&D and Education (2000) (0)
- Low-Voltage Superlattice Asymmetric (1991) (0)
- Excitons in strain-induced quantum-well wires and dots (1992) (0)
- Optical Properties of Self-Organizing Quantum-Dot Structures (1994) (0)
- The Effect of Implantation and Annealing Conditions on the Fe Profile in Semi-Insulating InP. (1986) (0)
- The Interaction of Photoexcited e-h Pairs with a two Dimensional Electron Gas Studied by Intersubband Spectroscopy (1994) (0)
- High Performance Fabry-perot Transverse Optical Modulators (1990) (0)
- Nano-optical emission of single colloidal CdSe nanowires (2015) (0)
- Mode Conversion and Radiation Loss Caused by Refractive-Index Fluctuations in an Asymmetric Slab Waveguide (1977) (0)
- Effects of Confinement on the Optical Properties of a Shallow Acceptor and its Bound Exciton in Narrow GaAs/AIGaAs Quantum Wells (1989) (0)
- Laterally-injected high-performance lasers by impurity-induced disordering (1992) (0)
- Low Threshold Ingaas-GaAs Quantum Well Lasers Fabricated By Impurity Induced Disordering Using A Novel Self-aligned Processing Technique (1992) (0)
- Design And Fabrication Of AlGaAs/GaAs Phase Couplers For Optical Integrated Circuit Applications (1985) (0)
- Design And Fabrication Of In-plane Ridge Waveguide Surface Emitting Lasers With Two Dry Etched 45/spl deg/ Total Reflection Mirrors (1991) (0)
- Photoluminescence Study of Li-implantation into ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy (1991) (0)
- Optoelectronic Integrated Circuit Technology and Design (1989) (0)
- Opto-electronic integrated-circuit technology and design. Annual report, July 1988-July 1989 (1989) (0)
- Local Strain Effects in Near-Field Spectra of Single Semiconductor Quantum Dots. (2002) (0)
- Magneto-optics of dense electron plasmas in modulation-doped GaInAs/AlInAs single quantum wells (1994) (0)
- high -speed IC interconnects (2017) (0)
- Optical Spectroscopy of Shallow Impurity States in Semiconductor Quantum Wells (1993) (0)
- into a passive waveguide contiguous with the active layer, formed by growing an (2015) (0)
- Near-field photoluminescence spectroscopy of localized states in InGaAsN alloys (2001) (0)
- High Performance Laser By Impurity Induced Disordering Using Self-aligned Si-Zn Diffusion (1990) (0)
- Recent Progress in Quantized Electronic Structures (1993) (0)
- Tunable Quantum-Well Infrared Detector (1989) (0)
- Time-resolved spectroscopy of InGaAs/ GaAs quantum dots (1994) (0)
- Sputtered SiNx film for self‐aligned Si‐Zn diffusion into GaAs and AlGaAs (1995) (0)
- Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence [photoluminescence] spectra of InGaAsN alloys (2003) (0)
- Near-surface quantum wells in GaAs: recovery of emission efficiency via surface passivation by hydrogen and stability effects (1993) (0)
- Magnetic field perturbation of a shallow acceptor and its bound exciton confined in GaAs/AlGaAs quantum wells. (1995) (0)
- Epitaxial Growth of GaAs-AIGaAs Quantum Wire Superlattices on Vicinal Surfaces. (1991) (0)
- Dynamical studies of the radiative recombination process in a modulation doped GaAs/AlGaAs heterostructure (1998) (0)
- Low-threshold Ingas/gaas Strained-layer Surface Emitting Lasers With Two 45/spl deg/ Angle Etched Total Reflection Mirrors (1991) (0)
- Transient tunneling currents in near-surface quantum wells (1995) (0)
- GROWTH AND IN-SITU PROCESSING OF LOW DIMENSIONAL QUANTUM STRUCTURES (1993) (0)
- Optical Spectroscopy of Defects in GaAs/AlGaAs Multiple Quantum Wells. (1993) (0)
- The Effect Of Bandtailing On The Performance Of GaAs/AlGaAs Optical Modulators And Switches Operated By Free Carrier Injection (1988) (0)
- Use of band luminescence as a temperature probe tor laser-beam heating of GaAs (1982) (0)
- CdZnSe/ZnSe strained layer superlattices disordered by germanium diffusion (1994) (0)
- Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures (2017) (0)
- Magnetooptical Studies of Acceptors Confined in Gaas/Algaas Quantum-Wells (1993) (0)
- GaAs-Al/x/Ga/1-x/As heterostructure devices for integrated optics (1976) (0)
- The electronic structure of the acceptor and its bound exciton in a GaAs/AlGaAs QW (1995) (0)
- Investigation of Bi-Exciton Formation in Doped GaAsAlxGa(1-x)as Quantum Wells (1993) (0)
- Low Threshold and Low Divergence Blue Vertical-Cavity Surface-Emitting Laser Diodes (1995) (0)
- Near-Field Magneto-Photoluminescence of Singe Self-Organized Quantum Dots. (2003) (0)
- Self-aligned Si-Zn Diffusion For Impurity-induced Disordering Lasers: Extremely Low Threshold And High Yield (1991) (0)
- Future trends in optoelectronics, both integrated and otherwise (1982) (0)
- Novel Monolithic Integration Of InGaAs-QW Laser And Intracavity Electroabsorption Modulator By Impurity-induced Disordering (1992) (0)
- Disordering of Hetero-Interface in (Cd, Zn) (S, Se) Strained Layer Superlattice Structure (1994) (0)
- Unique top-driven lasers having record-high performance by Self-Aligned Si-Zn Diffusion (1992) (0)
- Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy (2018) (0)
- Effects of a pseudomorphic InGaAs layer on focused ion‐beam modulation doped GaAs–AlGaAs quantum well structures (1992) (0)
- Minority-carrier investigations of beam-annealed and thermally-annealed semiconductors (1986) (0)
- Optical study of strained quantum well wires (1992) (0)
- Wigner Localization and Whispering Gallery Modes of Electrons in Quantum Dots (2018) (0)
- A Folded-Cavity TJS Surface Emitting Laser (1989) (0)
- Raman Scattering And Luminescence Study Of Laser Beam Induced Effects In GaAs-AlAs Multiple Quantum Well Structures (1984) (0)
- Observation of photoluminescence saturation in multiple narrow asymmetric coupled quantum wells (1992) (0)
- Optoelectronic studies of an electrically tunable infrared detector (1990) (0)
- Electron microscopy and defect/impurity spectroscopy of CW beam-annealed semiconductors (2020) (0)
- Continuous wave laser annealing of InP (1981) (0)
- Use Of III-V Compounds For Integrated Optical Circuits (1981) (0)
- VA-6 sputtered Si masks for GaAs etching and diffusion (1986) (0)
- Fe-related defect centers in Si resulting from CW laser annealing (1983) (0)
- Lasing in microdisks with an active region based on lattice-matched InP/AlInAs nanostructures (2017) (0)
- An optical device with double heterostructure (1975) (0)
- GaAs/AlGaAs Double-Heterojunction Bipolar Transistor Carrier-Injected Optical Intensity Modulator (1989) (0)
- Demonstration of blue vertical-cavity surface-emitting laser diode (1995) (0)
- Observation of a Martensitic Transition in the Raman Spectra of Ordered GaInP (1998) (0)
- Optical Diagnostics of Semiconductors (1995) (0)
- The use of near-field magneto-luminescence to study phase separation and localization in compound semiconductors (2006) (0)
- Theoretical and Experimental Study of the Radiative Decay Process in a Modulation Doped GaAs/AlGaAs Heterointerface (1997) (0)
- Conductance transient characterization of reactive ion etched HEMT gate recesses (1994) (0)
- Near-field photoluminescence spectroscopy of InGaN quantum dots (2005) (0)
- Implementation of a polarization modulation technique in a photoluminescence and photoluminescence excitation measurement setup (1992) (0)
- Self-electro-optic Effect Device Based On An Asymmetric Fabry-perot Modulator Using Wannier-stark Localization In Superlattice (1990) (0)
- Direct Observation of Lateral Coupling Between Self-Assembled Quantum Dots (1998) (0)
- Beic Investigation of Defects Induced in Cw Beam-Annealed Si (1980) (0)
- Annealing and Morphology Transformation Effects in MOCVD Grown of Self-Organized InAlAs-AlGaAs Quantum Dots (1999) (0)
- 1.0-mA-threshold lasers by impurity-Induced disordering (1993) (0)
- Investigation of InP Processing Techniques for Device Applications (1990) (0)
- The D- bound exciton observed in GaAs/AlGaAs quantum wells (1996) (0)
- Design and fabrication of AlGaAs/GaAs phase couplers for optical integrated-circuit applications (1985) (0)
- Disordering of CdZnSe/ZnSe Strained Layer Superlattices by Si Ion-Implantation and Low-Temperature Annealing (1994) (0)
- Localization of non-equilibrium carriers in deep InGaN quantum dots and its impact on the device performance (2006) (0)
- Apparent Microcavity Effect in the Near-Field Photoluminescence of a Single Quantum Dot (2000) (0)
- Structural and optical characteristics of InGaP layers grown on GaAs substrates by LPE technique (2004) (0)
- High Performance Quantum Well Asymmetric Fabry-Perot Reflection Modulators: Effect of Layer Thickness Variations (1991) (0)
- IIb-2 GaAs integrated lasers and detectors fabricated by wet chemical etching (1977) (0)
- INVESTIGATIONS OF InGaN/GaN AND InGaN/InGaN QDS GROWN IN A WIDE PRESSURE MOCVD REACTOR (2007) (0)
- Raman Scattering Technique to Evaluate Losses in GaAs Dielectric Waveguides (1975) (0)
- Monolithically Integrated Transverse Junction Stripe Lasers with Rib Waveguides in GaAs/AlGaAs (1988) (0)
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What Schools Are Affiliated With James Logan Merz?
James Logan Merz is affiliated with the following schools:
