Jim Plummer
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Canadian American electrical engineering professor
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Jim Plummerengineering Degrees
Engineering
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Electrical Engineering
#330
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#373
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Engineering
Jim Plummer's Degrees
- PhD Electrical Engineering Stanford University
Why Is Jim Plummer Influential?
(Suggest an Edit or Addition)According to Wikipedia, James D. Plummer is a Canadian-born electrical engineer. He is the John M. Fluke Professor of Electrical Engineering at Stanford University, and from 1999 to 2014 served as Frederick Emmons Terman Dean of the School of Engineering.
Jim Plummer's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Point defects and dopant diffusion in silicon (1989) (1163)
- Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces (1980) (762)
- Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's (1997) (538)
- I-MOS: a novel semiconductor device with a subthreshold slope lower than kT/q (2002) (344)
- Thermal oxidation of silicon in dry oxygen growth-rate enhancement in the thin regime. I: Experimental results (1985) (279)
- Activation and diffusion studies of ion-implanted p and n dopants in germanium (2003) (253)
- Impact ionization MOS (I-MOS)-Part I: device and circuit simulations (2005) (253)
- Chemistry of Si‐SiO2 interface trap annealing (1988) (245)
- VLSI Process modeling—SUPREM III (1983) (211)
- High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates (2004) (198)
- Modeling of the on-resistance of LDMOS, VDMOS, and VMOS power transistors (1980) (194)
- Silicon VLSI Technology (2008) (190)
- Material and process limits in silicon VLSI technology (2001) (176)
- Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon (1999) (146)
- Thermal Oxidation of Silicon in Dry Oxygen: Growth‐Rate Enhancement in the Thin Regime II . Physical Mechanisms (1985) (144)
- Gettering of gold in silicon: A tool for understanding the properties of silicon interstitials (1987) (143)
- Impact ionization MOS (I-MOS)-Part II: experimental results (2005) (139)
- Physics, technology, and modeling of polysilicon emitter contacts for VLSI bipolar transistors (1986) (139)
- Physical processes associated with the deactivation of dopants in laser annealed silicon (2002) (128)
- Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels I . Theory (1979) (110)
- SELF-DIFFUSION IN SILICON : SIMILARITY BETWEEN THE PROPERTIES OF NATIVE POINT DEFECTS (1999) (108)
- Integrated silicon-PVF2acoustic transducer arrays (1979) (101)
- Critical thickness enhancement of epitaxial SiGe films grown on small structures (2005) (97)
- A High-Resolution Low-Power Incremental $\Sigma\Delta$ ADC With Extended Range for Biosensor Arrays (2010) (97)
- Monolithic 3D Integrated Circuits (2007) (92)
- Substrate current at cryogenic temperatures: Measurements and a two-dimensional model for CMOS technology (1987) (87)
- Microstructure of thermal hillocks on blanket Al thin films (2000) (85)
- Arsenic deactivation enhanced diffusion: A time, temperature, and concentration study (1998) (81)
- Transient diffusion of low‐concentration B in Si due to 29Si implantation damage (1990) (76)
- Non-ideal base current in bipolar transistors at low temperatures (1987) (76)
- P-Channel Germanium FinFET Based on Rapid Melt Growth (2007) (75)
- Thermal stability of dopants in laser annealed silicon (2002) (74)
- Thermal oxidation of silicon in dry oxygen (1983) (73)
- Universal Mobility-Field Curves for Electrons and Holes in MOS Inversion Layers (1987) (72)
- Thermal Oxidation of Heavily Phosphorus‐Doped Silicon (1978) (71)
- A simple model for threshold voltage of surrounding-gate MOSFET's (1998) (70)
- Species and dose dependence of ion implantation damage induced transient enhanced diffusion (1996) (67)
- Integration of Germanium-on-Insulator and Silicon MOSFETs on a Silicon Substrate (2006) (66)
- Point‐defect generation during oxidation of silicon in dry oxygen. I. Theory (1986) (63)
- Avalanche breakdown in high-voltage D-MOS devices (1976) (61)
- Measurement of silicon interstitial diffusivity (1985) (60)
- On the Generation of High-Frequency Acoustic Energy with Polyvinylidene Fluoride (1980) (60)
- Vacancy generation resulting from electrical deactivation of arsenic (1995) (59)
- Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels II . Comparison with Experiment and Discussion (1979) (58)
- Analytical relationship for the oxidation of silicon in dry oxygen in the thin‐film regime (1987) (58)
- Impact of lateral source/drain abruptness on device performance (2002) (57)
- Time Resolved Annealing of Interface Traps in Polysilicon Gate Metal‐Oxide‐Silicon Capacitors (1987) (57)
- A Novel Depletion-IMOS (DIMOS) Device With Improved Reliability and Reduced Operating Voltage (2009) (56)
- Structure and morphology of polycrystalline silicon‐single crystal silicon interfaces (1985) (55)
- Observation of phosphorus pile‐up at the SiO2‐Si interface (1978) (55)
- Short-channel effects in MOSFET's at liquid-Nitrogen temperature (1986) (53)
- A multi-enzyme model for Pyrosequencing. (2004) (53)
- Film stress‐related vacancy supersaturation in silicon under low‐pressure chemical vapor deposited silicon nitride films (1988) (52)
- Silicon VLSI Technology: Fundamentals, Practice, and Modeling (2020) (51)
- Parasitic bipolar gain in fully depleted n-channel SOI MOSFET's (1994) (51)
- High-Performance Gate-All-Around GeOI p-MOSFETs Fabricated by Rapid Melt Growth Using Plasma Nitridation and ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric and Self-Aligned NiGe Contacts (2008) (51)
- Electrical deactivation of arsenic as a source of point defects (1994) (50)
- Insulated-gate planar thyristors: I—Structure and basic operation (1980) (50)
- Optimization of silicon bipolar transistors for high current gain at low temperatures (1988) (49)
- Study of the effect of grain boundary migration on hillock formation in Al thin films (2001) (48)
- Characterization of arsenic dose loss at the Si/SiO2 interface (2000) (47)
- Si‐SiO2 interface trap production by low‐temperature thermal processing (1987) (45)
- Fluorine interaction with point defects, boron, and arsenic in ion-implanted Si (2002) (44)
- Physical mechanisms responsible for short channel effects in MOS devices (1981) (42)
- A High-Resolution Low-Power Oversampling ADC with Extended-Range for Bio-Sensor Arrays (2007) (42)
- A simple EEPROM cell using twin polysilicon thin film transistors (1994) (42)
- Influence of dislocation loops created by amorphizing implants on point defect and boron diffusion in silicon (1996) (42)
- Negative Differential Resistance Circuit Design and Memory Applications (2009) (42)
- Active Power Device Selection in High- and Very-High-Frequency Power Converters (2018) (41)
- Lateral IGBT in thin SOI for high voltage, high speed power IC (1998) (41)
- A comparative study of dopant activation in boron, BF/sub 2/, arsenic, and phosphorus implanted silicon (2002) (41)
- Point‐defect generation during oxidation of silicon in dry oxygen. II. Comparison to experiment (1986) (39)
- TEMPERATURE AND TIME DEPENDENCE OF B AND P DIFFUSION IN SI DURING SURFACE OXIDATION (1990) (39)
- A new integrated pixel detector for high energy physics (1991) (39)
- PIN detector arrays and integrated readout circuitry on high-resistivity float-zone silicon (1994) (39)
- Characterization of surface mobility on the sidewalls of dry-etched trenches (1988) (38)
- Modeling uphill diffusion of Mg implants in GaAs using suprem‐iv (1992) (38)
- Two-dimensional transmit/receive ceramic piezoelectric arrays: Construction and performance (1978) (37)
- Rapid Melt Growth of Germanium Crystals with Self-Aligned Microcrucibles on Si Substrates (2005) (36)
- Double-well model of dielectric relaxation current (2004) (35)
- Model for bulk effects on Si interstitial diffusivity in silicon (1987) (35)
- Calculation of the fractional interstitial component of boron diffusion and segregation coefficient of boron in Si0.8Ge0.2 (1996) (35)
- 0.18 um dual Vt MOSFET process and energy-delay measurement (1996) (34)
- Charge Trapping in High-$k$Gate Stacks Due to the Bilayer Structure Itself (2006) (33)
- Integrated Electronics for a Reading Aid for the Blind (1969) (33)
- Modeling the diffusion of grown‐in Be in molecular beam epitaxy GaAs (1995) (32)
- A prototype monolithic pixel detector (1994) (32)
- The dose, energy, and time dependence of silicon self‐implantation induced transient enhanced diffusion at 750 °C (1996) (32)
- CMOS technology scaling for low voltage low power applications (1994) (31)
- Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles (2003) (31)
- Applied bias slewing in transient Wigner function simulation of resonant tunneling diodes (1997) (31)
- Metastable boron active concentrations in Si using flash assisted solid phase epitaxy (2004) (31)
- Kinetics of the Thermal Oxidation of Silicon in O 2 / H 2 O and O 2 / Cl2 Mixtures (1978) (31)
- MOS electronics for a portable reading aid for the blind (1972) (30)
- Device physics and technology of complementary silicon MESFET's for VLSI applications (1991) (30)
- A study of silicon interstitial kinetics using silicon membranes: Applications to 2D dopant diffusion (1987) (30)
- First beam test results from a monolithic silicon pixel detector (1993) (30)
- An Acoustic Image Sensor Using a Transmit-Receive Array (1974) (29)
- Small geometry depleted base bipolar transistors (BSIT)—VLSI devices? (1981) (29)
- Experimental evidence for a dual vacancy–interstitial mechanism of self-diffusion in silicon (1998) (29)
- Demonstration of a p-channel BICFET in the Ge/sub x/Si/sub 1-x//Si system (1989) (28)
- A novel thyristor-based SRAM cell (T-RAM) for high-speed, low-voltage, giga-scale memories (1999) (28)
- Elimination of bipolar-induced breakdown in fully-depleted SOI MOSFETs (1992) (27)
- SOI LIGBT devices with a dual P-well implant for improved latching characteristics (1993) (26)
- Heating mechanisms of LDMOS and LIGBT in ultrathin SOI (1997) (26)
- Spatial temperature profiles due to nonuniform self-heating in LDMOS's in thin SOI (1997) (26)
- Low resistance, low-leakage ultrashallow p/sup +/-junction formation using millisecond flash anneals (2005) (25)
- Modeling of Surrounding Gate MOSFETs With Bulk Trap States (2007) (25)
- An ultrasonic imaging system for realtime cardiac imaging (1974) (24)
- Modeling the suppression of boron transient enhanced diffusion in silicon by substitutional carbon incorporation (2001) (24)
- Creep-controlled Diffusional Hillock Formation in Blanket Aluminum Thin Films as a Mechanism of Stress Relaxation (2000) (24)
- Sub-quarter-micrometer CMOS on ultrathin (400 AA) SOI (1992) (23)
- Extended defects of ion-implanted GaAs (1991) (22)
- Simulation and modelling of a new silicon X-ray drift detector design for synchrotron radiation applications (1996) (22)
- Optimization of bipolar transistors for low temperature operation (1987) (22)
- MOSFETs and high-speed photodetectors on Ge-on-insulator substrates fabricated using rapid melt growth (2004) (22)
- Electrical performance and physics of isolation region structures for VLSI (1984) (22)
- Silicon interstitial generation by argon implantation (1985) (22)
- Effect of buried Si‐SiO2 interfaces on oxidation and implant‐enhanced dopant diffusion in thin silicon‐on‐insulator films (1994) (22)
- Dopant deactivation in heavily Sb doped Si (001): A high-resolution x-ray diffraction and transmission electron microscopy study (2002) (21)
- An eight-terminal Kelvin-tapped bipolar transistor for extracting parasitic series resistances (1991) (20)
- Output Capacitance Loss Characterization of Silicon Carbide Schottky Diodes (2019) (20)
- Evolution of the crystallographic position of As impurities in heavily doped Si crystals as their electrical activity changes (1996) (20)
- A semiclassical model of dielectric relaxation in glasses (2006) (20)
- Design requirements for integrated biosensor arrays (2005) (20)
- A low-temperature NMOS technology with Cesium-implanted load devices (1987) (20)
- Modeling the diffusion of implanted Be in GaAs (1995) (19)
- Vertical, fully-depleted, surrounding gate MOSFETs on sub-0.1 /spl mu/m thick silicon pillars (1996) (19)
- Rapid thermal annealing of interface states in aluminum gate metal‐oxide‐silicon capacitors (1985) (19)
- Arsenic deactivation enhanced diffusion and the reverse short-channel effect (1997) (18)
- Process physics determining 2-D impurity profiles in VLSI devices (1986) (18)
- Fast switching LIGBT devices fabricated in SOI substrates (1992) (18)
- Oxidation-enhanced diffusion of boron and phosphorus in heavily doped layers in silicon (1994) (18)
- Vacancy supersaturation in Si under SiO2 caused by SiO formation during annealing in Ar (1989) (18)
- Merged BiCMOS logic to extend the CMOS/BiCMOS performance crossover below 2.5-V supply (1991) (17)
- Formation of 0.1 µm N+/P and P+/N junctions by doped silicide technology (1985) (16)
- A MOS-controlled triac device (1978) (16)
- Study on hydrogenation of polysilicon thin film transistors by ion implantation (1995) (16)
- Diffusion modeling of zinc implanted into GaAs (1997) (16)
- Electrical and structural properties of polycrystalline silicon (2000) (16)
- Monolithic Silicon-PVF2 Piezoelectric Arrays for Ultrasonic Imaging (1980) (16)
- Suppression of Al-Ga interdiffusion by a WNx film on an AlxGa1-xAs/AlAs superlattice structure (1991) (16)
- State-of-the-art in two-dimensional ultrasonic transducer array technology. (1976) (16)
- A vertical submicron polysilicon thin-film transistor using a low temperature process (1994) (16)
- Silicon Orientation Effects in the Initial Regime of Wet Oxidation (2002) (16)
- A 3-D sidewall flash EPROM cell and memory array (1993) (15)
- An implantable ion sensor transducer (1981) (15)
- A novel pillar DRAM cell for 4 Gbit and beyond (1998) (15)
- A Comparison of the Diffusion Behavior of Ion‐Implanted Sn, Ge, and Si in Gallium Arsenide (1991) (15)
- Dispersion of MOS capacitance-voltage characteristics resulting from the random channel dopant ion distribution (1994) (15)
- Characterization of cesium diffusion in silicon dioxide films using backscattering spectrometry (1987) (15)
- Two Reaction Model of Interface Trap Annealing (1986) (14)
- Doping and damage dose dependence of implant induced transient enhanced diffusion below the amorphization threshold (1994) (14)
- Suppression of the floating-body effect using SiGe layers in vertical surrounding-gate MOSFETs (2001) (14)
- Tradeoff between threshold voltage and breakdown in high-voltage double-diffused MOS transistors (1978) (14)
- Silicon self-diffusion under extrinsic conditions (2001) (13)
- Effects of stress on the electrical activation of implanted Si in GaAs (1989) (13)
- ${C}_{\textsf{OSS}}$ Measurements for Superjunction MOSFETs: Limitations and Opportunities (2019) (13)
- Computer Aided Design of Integrated Circuit Fabrication Processes for VLSI Devices (1981) (13)
- Impact of processing parameters on base current in polysilicon contacted bipolar transistors (1985) (13)
- A Density Metric for Semiconductor Technology [Point of View] (2020) (13)
- Problems with metal-oxide high-/spl kappa/ dielectrics due to 1/t dielectric relaxation current in amorphous materials (2003) (13)
- Optimization of quarter micron MOSFETs for low voltage/low power applications (1995) (12)
- Silicon interstitial absorption during thermal oxidation at 900 °C by extended defects formed via silicon implantation (1993) (12)
- Surface and bulk point defect generation in Czochralski and float zone type silicon wafers (1996) (12)
- Single-Crystal GaAs and GaSb on Insulator on Bulk Si Substrates Based on Rapid Melt Growth (2010) (12)
- Considerations for Active Power Device Selection in High- and Very-High-Frequency Power Converters (2019) (12)
- Performance of the 3-D PENCIL flash EPROM cell and memory array (1995) (12)
- An Investigation into the Causes of COSS Losses in GaN-on-Si HEMTs (2019) (12)
- From DRAM to SRAM with a novel sige-based negative differential resistance (NDR) device (2005) (12)
- Enhanced diffusion by electrical deactivation of arsenic and its implications for bipolar devices (1996) (11)
- High Quality Single-Crystal Laterally Graded SiGe on Insulator by Rapid Melt Growth (2010) (11)
- TPM 9.2: MBiCMOS: A Device and Circuit Technique Scalable to the Sub-micron, Sub-2V Regime (1991) (11)
- Performance of a monolithic pixel detector (1993) (11)
- Substrate current in N-channel and P-channel MOSFETs between 77K and 300K: Characterization and simulation (1985) (11)
- Lattice compression of Si crystals and crystallographic position of As impurities measured with x-ray standing wave spectroscopy (1999) (11)
- Quantitative Modeling of Si / SiO2 Interface Fixed Charge I . Experimental Results (1987) (10)
- A Study of the Deactivation of High Concentration, Laser Annealed Dopant Profiles in Silicon (2001) (10)
- Kinetics of high concentration arsenic deactivation at moderate to low temperatures (1992) (10)
- Low-Temperature Monolithic Three-Layer 3-D Process for FPGA (2013) (10)
- A modified lightly doped drain structure for VLSI MOSFET's (1986) (10)
- Atomic-scale diffusion mechanisms via intermediate species (2002) (10)
- Ultra low energy arsenic implant limits on sheet resistance and junction depth (2000) (10)
- Hall measurements of bilayer structures (2003) (10)
- Dependence of Fully Depleted Soimosfet Breakdown Voltage on Film Thickness and Channel Length (1992) (10)
- Si incorporation from the seed into Ge stripes crystallized using rapid melt growth (2014) (9)
- BTBT Transistor Scaling: Can they be Competitive with MOSFETs? (2008) (9)
- Challenges for predictive process simulation in sub 0.1 μm silicon devices (1995) (9)
- Enhanced Sb diffusion in Si under thermal Si3N4 films during annealing in Ar (1988) (9)
- A Comparative Study of Dopant Activation in Boron, BF , Arsenic, and Phosphorus Implanted Silicon (2002) (9)
- A virtual factory-based environment for semiconductor device development (1992) (9)
- Single-crystal metal growth on amorphous insulating substrates (2018) (9)
- A new structure for controlling dark current due to surface generation in drift detectors (1998) (8)
- Validation of two-dimensional implant and diffusion profiles using novel scanning capacitance microscope sample preparation and deconvolution techniques (1998) (8)
- Astronomical observations with normal incidence multilayer optics III: selection of multilayer bandpasses (1994) (8)
- A 3-D sidewall flash EPROM cell and memory array (1993) (8)
- Experimental determination of the temperature dependence of argon annealed fixed oxide charge at the Si/SiO2 interface (1984) (8)
- Performance of the multilayer-coated mirrors for the MultiSpectral Solar Telescope Array (1994) (8)
- The Influence of Amorphizing Implants on Boron Diffusion in Silicon (1997) (8)
- Measurement and reduction of interface states at the recrystallized silicon‐underlying insulator interface (1985) (8)
- Characterization of Bipolar Transistors with Polysilicon Emitter Contacts (1984) (8)
- Implant Enhanced Diffusion of Boron in Silicon Germanium (1995) (8)
- A DI/JI-compatible monolithic high-voltage multiplexer (1986) (8)
- Species, dose and energy dependence of implant induced transient enhanced diffusion (1993) (8)
- Modeling dopant redistribution in SiO2/WSi2/Si structure (1986) (8)
- Low temperature CMOS devices and technology (1986) (8)
- Modified LDD device structures for VLSI (1985) (7)
- Increased hot-carrier effects using SiGe layers in vertical surrounding-gate MOSFETs (2001) (7)
- Optimal device architecture and hetero-integration scheme for III–V CMOS (2013) (7)
- Dynamics of Arsenic dose loss at the SiO2 interface during TED (1998) (7)
- Characterization of interface topography of the buried Si‐SiO2 interface in silicon‐on‐insulator material by atomic force microscopy (1994) (7)
- Range distribution of implanted cesium ions in silicon dioxide films (1988) (7)
- Process and Device Modeling for VLSI Structures (1984) (7)
- Effect of interconnection delay on liquid nitrogen temperature CMOS circuit performance (1987) (7)
- Quantitative Modeling of Si / SiO2 Interface Fixed Charge II . Physical Modeling (1987) (7)
- Insulated-gate planar thyristors: II—Quantitative modeling (1980) (7)
- Silicon Epitaxy and Oxidation (1977) (7)
- A model for mobility degradation in highly doped arsenic layers (1996) (7)
- The Influence of Point Defects on Two Dimensional Diffusion Kinetics (1986) (7)
- Physical Modeling of Backside Gettering (1984) (7)
- Programmable Factory For Adaptable IC Manufacturing (1993) (6)
- Small- and Large-Signal Dynamic Output Capacitance and Energy Loss in GaN-on-Si Power HEMTs (2021) (6)
- Nonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structures (1999) (6)
- Monolithic MOS high voltage integrated circuits (1980) (6)
- Computer-Aided Engineering of Semiconductor Integrated Circuits. (1978) (6)
- Measurement of substrate current in SOI MOSFETs (1994) (6)
- Improved MOS device performance through the enhanced oxidation of heavily doped n+silicon (1979) (6)
- Novel very high IE structures based on the directed BBHE mechanism for ultralow-power flash memories (2005) (6)
- A novel DC measurement method for the accurate extraction of bipolar resistive parasitics (1990) (6)
- A physics based approach to ultra-shallow p/sup +/-junction formation at the 32 nm node (2002) (6)
- Diffuse x-ray scattering and transmission electron microscopy study of defects in antimony-implanted silicon (2004) (6)
- The Local Structure of Antimony in High Dose Antimony Implants in Silicon by XAFS and SIMS (2002) (5)
- High mobility Si1-xGex PMOS transistors to 5K (1994) (5)
- Characterization of surface mobility in MOS structures containing interfacial cesium ions (1989) (5)
- Oxidation enhanced dopant diffusion in separation by implantation by oxygen silicon‐on‐insulator material (1994) (5)
- Characterization of Profiling Techniques for Ultralow Energy Arsenic Implants (2001) (5)
- An Improved Wedge-Type Backing for Piezoelectric Transducers (1979) (5)
- Origins of Soft-Switching Coss Losses in SiC Power MOSFETs and Diodes for Resonant Converter Applications (2021) (5)
- Kinetic Studies of Silicon - Silicon Dioxide Interface Trap Annealing Using Rapid Thermal Processing (1985) (5)
- A vertical high voltage termination structure for high-resistivity silicon detectors (1997) (5)
- Second generation monolithic full-depletion radiation sensor with integrated CMOS circuitry (2010) (5)
- Effect of oxygen precipitation on phosphorus diffusion in Czochralski silicon (1988) (5)
- IIA-6 a comparison of buried channel and surface channel MOSFETs for VLSI (1982) (5)
- The field assisted turn-off thyristor: A regenerative device with voltage controlled turn-off (1992) (5)
- Carrier profiling via scanning tunneling spectroscopy: Comparison with scanning capacitance microscopy (2004) (5)
- High voltage monolithic MOS driver arrays (1971) (4)
- Efficient numerical simulation of the high-frequency MOS capacitance (1987) (4)
- Rapid Melt Growth of Single Crystal InGaAs on Si Substrates (2016) (4)
- Defects and Diffusion issues for the Manufacturing of Semiconductors in the 21st Century (1997) (4)
- The effect of background doping and dose on diffusion of ion‐implanted tin in gallium arsenide (1990) (4)
- Process Dependence of the Metal Semiconductor Work Function Difference (1987) (4)
- Device physics and optimization of conductivity-modulated power MOSFETs (1988) (4)
- Complementary silicon MESFETs for VLSI (1986) (4)
- A new device structure and process flow for a low-leakage p-i-n diode-based integrated detector array (1991) (4)
- The effect of interconnection resistance on the performance enhancement of liquid-nitrogen-cooled CMOS circuits (1989) (4)
- SUPREM 3.5, process modeling of gallium arsenide (1987) (4)
- Ge/sub x/Si/sub 1-x//silicon inversion-base transistors: experimental demonstration (1992) (4)
- MBiCMOS: A Device And Circuit Technique Scalable To The Sub-micron, Sub-211 Regime (1991) (4)
- MOS electronics for a reading aid for the blind (1970) (4)
- Thermal Oxidation: Kinetics, Charges, Physical Models, and Interaction with Other Processes in VLSI Devices (1983) (3)
- Nitrogen-doped poly spacer local oxidation (1997) (3)
- Retarded diffusion of Sb in a high concentration As background during silicon oxidation (1992) (3)
- THERMAL OXIDATION OF HEAVILY PHOSPHORUS-DOPED SILICON (1978) (3)
- A novel trench-injector power device with low ON resistance and high switching speed (1988) (3)
- Surface potential fluctuations in MOS devices induced by the random distribution of channel dopant ions (1988) (3)
- Device implications of enhanced diffusion caused by the electrical deactivation of arsenic (1994) (3)
- Characterization of transient process phenomena using a temperature-tolerant metallurgy (1984) (3)
- Mechanism of solid phase crystallization of prepatterned nanoscale α-Si pillars (2007) (3)
- A low-light-level self-scanned MOS image sensor (1972) (3)
- Localised impurity induced layer disordering for lithographic control of the lateral oxidation of AlAs (1997) (3)
- Cross sectional Tem Sample Preparation Using E-Beam Lithography and Reactive ion Etching (1997) (3)
- Thermionic emission probability for semiconductor-insulator interfaces (1987) (3)
- Process and device modeling (1990) (3)
- Modeling stress effects on thin oxide growth kinetics (1997) (3)
- The complementary insulated-gate bipolar transistor (CIGBT)-a new power switching device (1990) (3)
- Thermal instability of Schottky diode barrier heights modified by inert ion sputter-etching damage (1986) (3)
- Single-crystalline Si on insulator in confined structures fabricated by two-step metal-induced crystallization of amorphous Si (2002) (3)
- Modeling Activation of Implanted Si in GaAs (1991) (3)
- Ni/sub 2/Si and NiSi formation by low temperature soak and spike RTPs (2005) (3)
- A physical investigation of large-signal dynamic output capacitance and energy loss in GaN-on-Si power HEMTs at high-frequency applications (2020) (3)
- Pseudo-MOS Operation of Ultra-Narrow Polycrystalline Silicon Wires: Electrical Characterization and Memory Effects (2000) (2)
- On H Passivation of Si Donors in GaAs Annealed with Plasma‐ Enhanced Chemical Vapor Deposited Silicon Nitride Caps (1991) (2)
- Circuit approaches to increasing IGBT switching speed (1988) (2)
- TA-A7 modeling of small-geometry depleted-base bipolar structures (1980) (2)
- SiGe heterojunctions in epitaxial vertical surrounding-gate MOSFETs (2000) (2)
- Modeling and fabrication of vertical pillar MOSFETs made in recrystallized Si (2000) (2)
- Statistical Retardation Delay of I-MOS and Its Measurement Using TDR (2011) (2)
- Fabrication of p-channel BICFET in the Ge/sub x/Si/sub 1-x//Si system (1988) (2)
- A closed-form analysis of f/sub T/ for the bipolar transistor down to liquid nitrogen temperature (1989) (2)
- Transparent Probe Test Structure for Electrical and Physical Characterization of Defects in Thin Films (2000) (2)
- Reduction of lateral phosphorus diffusion in CMOS n-wells (1990) (2)
- A Comprehensive Model for Carbon Suppression of Boron Transient Enhanced Diffusion (2001) (2)
- Characterization of arsenic dose loss at the Si/SiO/sub 2/ interface using high resolution X-ray photoelectron spectrometry (1998) (2)
- Ge/sub x/Si/sub 1-x//silicon inversion-base transistors: theory of operation (1992) (2)
- Astronomical observations with normal incidence multilayer optics IV: selection of spectral lines (1994) (2)
- A Cardiac Dynamics Visualization System (1973) (2)
- Advanced heterojunction Ge/sub x/Si/sub 1-x//Si bipolar devices (1989) (2)
- Use of Low Temperature Si MBE Growth Techniques for High Performance SiGe/Si Electronics (1992) (1)
- Device Physics and Technology of Complementary Silicon Kenneth P. MESFET's for VLSI Applications (1991) (1)
- Atomistic modeling of B activation and deactivation for ultra-shallow junction formation (2003) (1)
- WP-B3 an advanced 34-element monolithic silicon-PVF2piezoelectric array for ultrasonic imaging (1979) (1)
- A PHYSICAL MODEL FOR THE OBSERVED DEPENDENCE OF THE METAL-SEMICONDUCTOR WORK FUNCTION DIFFERENCE ON SUBSTRATE ORIENTATION (1988) (1)
- Kinetics of boron activation (2000) (1)
- Activation and deactivation of high concentration arsenic with some evidence of precipitation (1992) (1)
- The use of laser annealing to reduce parasitic series resistances in MOS devices (2002) (1)
- Miniaturized DNA Analysis Devices (2002) (1)
- Novel Methods For Ultrashallow Low Resistance Junction Formation (2006) (1)
- Implications of Oxidation Models on the Point Defect Behavior in the Silicon Substrate (1988) (1)
- Experimental Study of Self-Diffusion in Silicon Using Isotopically Enriched Structures (1999) (1)
- A Comparative Study of Dose Loss and Diffusion for B 11 and BF 2 Implants (2000) (1)
- The Superlattice Diffusion Probe: A Tool for Modeling Diffusion in III-V Semiconductors (1991) (1)
- Ge,Sil - ,/Silicon Inversion-Base Transistors: Experimental Demonstration (1992) (1)
- A self-aligned split-gate flash EEPROM cell with 3-D pillar structure (1999) (1)
- Design and analysis of a new conductivity-modulated power MOSFET (1993) (1)
- Fabrication, Characterization and Optimization of Posfet (PVF2-Silicon) Piezoelectric Transducers for Low Frequency (100 Hz to 500 kHz) Underwater Acoustic Applications. (1979) (1)
- Diffusional Hillock formation in Al thin films contolled by creep (1999) (1)
- Diffusion of Ion-Implanted Tin in Gallium Arsenide (1989) (1)
- Tool Integration for Power Device Modeling Including 3D Aspects (1992) (1)
- A Fast Turn-Around Facility for Very Large Scale Integration (VLSI) (1981) (1)
- High performance fully and partially depleted poly-Si surrounding gate transistors (1999) (1)
- Efficient kinetic Monte Carlo simulation of annealing in semiconductor materials (2003) (1)
- Summary Abstract: Current problems in silicon oxidation (1983) (0)
- Defects at Electrode-Oxide and Electrode-Silicon Interfaces in VHSI Device Structures. (1984) (0)
- What Does Self-Diffusion Tell Us about Ultra Shallow Junctions? (2000) (0)
- Models of Fabrication Processes, Devices, Circuits, and Systems for Computer-Aided Design of VLSI (1979) (0)
- Silicon-based Devices and Technology for the Nanoscale Era (2004) (0)
- Solid-State Imaging and Biomedical Applications Chairman (1979) (0)
- Hydrogen Passivation in Plasma-Etched Polycrystalline Silicon Resistors (1999) (0)
- VIB-6 measurement of submicron potential barriers in depleted base transistors (1981) (0)
- The use of 2D effects in LOCOS structures to improve device isolation (1982) (0)
- Dielectric Isolation of Silicon Through SEG/ELO In Trenches (1989) (0)
- An Electronically Addressed Bulk Acoustic Wave Fourier Transform Device (1979) (0)
- SUPREM III - Process Simulation Toward VLSI (1983) (0)
- SESSION XVI: LSI DESIGN, TESTING AND INTERFACING (1976) (0)
- Trench Isolation Technology and Device Physics (1983) (0)
- Sub Tenth Micron CMOS Devices - A Demonstration of the Virtual Factory Approach to New Structure Design. (1995) (0)
- A Diffraction‐Based Transmission Electron Microscope Technique for Measuring Average Grain Size (1999) (0)
- Localized intermixing of AlAs and GaAs layers for lithographic control of the lateral oxidation of AlAs (1998) (0)
- Thermal Oxidation Kinetics and Locos Isolation in Soi Materials (1992) (0)
- Geometry-driven charge accumulation in electrokinetic flows through laminates (2010) (0)
- A new MOSFET output conductance measurement technique (1993) (0)
- FIRSTDIRECT BETA MEASUREMENT FOR PARASITIC LATERtu, BIPOLAR TRANSISTORS IN FULLYDEPLEXED SO1 MOSFETs (1992) (0)
- WP-A6 thermal oxidation of heavily doped silicon: Physical modeling and device applications (1978) (0)
- Process Sensitivity of Depleted Base Bipolar Transistors (BSIT) (1981) (0)
- A Comparison of Implant Enhanced Dopant Diffusion in Bulk and SOI Material (1994) (0)
- AC characterization and modelling of the Ge/sub x/Si/sub 1-x//Si BICFET (1992) (0)
- On electronkinetically driven flows in swelling clays (2008) (0)
- Proceedings of the second Symposium on Process Physics and Modeling in Semiconductor Technology (1988) (0)
- Session 15 solid-state imaging and biomedical applications (1979) (0)
- KINETICS OF THE THERMAL OXIDATION OF SILICON IN OXYGEN WATER AND OXYGEN CHLORINE MIXTURES (1978) (0)
- Breakdown voltage of submicron MOSFETs in fully depleted SOI (1993) (0)
- Two-dimensional Dopant Diffusion Study using Scanning Capacitance Microscopy (1999) (0)
- Geometry-Driven Charge Accumulation in Electrokinetic Flows between Thin, Closely Spaced Laminates (2012) (0)
- Design and characterization of SiGe TFT devices and process using Stanford's test chip design environment (1997) (0)
- Simulation Of Multilayer Structures For VLSI Using The SUPREM-III Process Simulation Program (2007) (0)
- Solid Modeling-based Parametric Operations For Device Design (1993) (0)
- Computational Science: An Engineering Perspective (2007) (0)
- On a Novel Technique for the Electrical Characterization of Polycrystalline Silicon (2000) (0)
- Gettering of Metal Precipitates (1987) (0)
- Gettering in Low Temperature VLSI Processes (1985) (0)
- IVB-4 Characterization and two-dimensional simulation of impact ionization current in MOSFET's between 77 and 300 K (1985) (0)
- Morphological Studies of Polysilicon Emitter Contacts (1984) (0)
- High mobility Sil , , Gex PMOS transistors to 5 (2016) (0)
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