James S. Santa Barbara Speck
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James S. Santa Barbara Speckengineering Degrees
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Applied Physics
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Engineering
James S. Santa Barbara Speck's Degrees
- PhD Electrical Engineering Stanford University
- Masters Electrical Engineering Stanford University
- Bachelors Electrical Engineering Stanford University
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(Suggest an Edit or Addition)James S. Santa Barbara Speck's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Prospects for LED lighting (2009) (1521)
- Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors (2000) (957)
- Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films (1996) (784)
- Strain-induced polarization in wurtzite III-nitride semipolar layers (2006) (641)
- Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors (2006) (624)
- Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop. (2013) (553)
- DOMAIN CONFIGURATIONS DUE TO MULTIPLE MISFIT RELAXATION MECHANISMS IN EPITAXIAL FERROELECTRIC THIN FILMS. I: THEORY (1994) (462)
- Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire (2002) (454)
- Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy (2000) (427)
- STRUCTURAL ORIGIN OF V-DEFECTS AND CORRELATION WITH LOCALIZED EXCITONIC CENTERS IN INGAN/GAN MULTIPLE QUANTUM WELLS (1998) (413)
- MOSAIC STRUCTURE IN EPITAXIAL THIN FILMS HAVING LARGE LATTICE MISMATCH (1997) (404)
- High-power AlGaN/GaN HEMTs for Ka-band applications (2005) (399)
- Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3 (1996) (386)
- POLARIZATION-INDUCED CHARGE AND ELECTRON MOBILITY IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY (1999) (379)
- Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy (1997) (350)
- Dislocation mediated surface morphology of GaN (1999) (348)
- Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays (2013) (324)
- Electrical characterization of GaN p-n junctions with and without threading dislocations (1998) (324)
- Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire (1995) (309)
- AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy (2001) (295)
- Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting (2013) (287)
- Realization of high tunability barium strontium titanate thin films by rf magnetron sputtering (1999) (280)
- Domain patterns in epitaxial rhombohedral ferroelectric films. I. Geometry and experiments (1998) (267)
- Dislocation generation in GaN heteroepitaxy (1998) (265)
- Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices (2012) (261)
- Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates (2002) (256)
- Analysis of reverse-bias leakage current mechanisms in GaN grown by molecular-beam epitaxy (2004) (254)
- Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition (1996) (252)
- High Power and High External Efficiency m-Plane InGaN Light Emitting Diodes (2007) (238)
- Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition (1998) (236)
- Nonpolar and Semipolar Group III Nitride-Based Materials (2009) (232)
- A GaN bulk crystal with improved structural quality grown by the ammonothermal method. (2007) (231)
- Nucleation layer evolution in metal‐organic chemical vapor deposition grown GaN (1996) (222)
- Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition (1998) (221)
- High-brightness polarized light-emitting diodes (2012) (215)
- High internal and external quantum efficiency InGaN/GaN solar cells (2011) (205)
- Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. II. Experimental verification and implications (1994) (204)
- Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode (2005) (204)
- Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates (2005) (203)
- N-polar GaN∕AlGaN∕GaN high electron mobility transistors (2007) (201)
- Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes (2007) (200)
- Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak (2004) (199)
- The Role of Threading Dislocations in the Physical Properties of GaN and its Alloys (1999) (199)
- Elastic energy release due to domain formation in the strained epitaxy of ferroelectric and ferroelastic films (1993) (194)
- Modeling of threading dislocation reduction in growing GaN layers (2000) (190)
- Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy (2003) (182)
- Correlated scanning Kelvin probe and conductive atomic force microscopy studies of dislocations in gallium nitride (2003) (181)
- Stress relaxation in mismatched layers due to threading dislocation inclination (2003) (180)
- A new high performance phase shifter using Ba/sub x/Sr/sub 1-x/TiO3 thin films (2002) (179)
- The role of high-temperature island coalescence in the development of stresses in GaN films (2001) (171)
- Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures (2003) (171)
- Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes (2008) (170)
- Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy (2000) (165)
- Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors (2001) (165)
- Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In 2 O 3 films (2013) (165)
- Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells (2012) (164)
- High-Power Blue-Violet Semipolar (202̄1̄) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm2 (2011) (163)
- Domain configurations due to multiple misfit relaxation mechanisms in epitaxial ferroelectric thin films. III. Interfacial defects and domain misorientations (1995) (162)
- Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates (2005) (162)
- Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors (2004) (161)
- Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys (2002) (160)
- Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates (2008) (159)
- Donors and deep acceptors in β-Ga2O3 (2018) (159)
- Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition (2004) (156)
- Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition (2007) (156)
- Threading dislocation reduction via laterally overgrown nonpolar (112̄0)a-plane GaN (2002) (154)
- Impact of thermal strain on the dielectric constant of sputtered barium strontium titanate thin films (2002) (153)
- In-polar InN grown by plasma-assisted molecular beam epitaxy (2006) (153)
- Structural and electronic properties of Ga2O3-Al2O3 alloys (2018) (152)
- Optical properties of InGaN quantum wells (1999) (149)
- N-polar GaN epitaxy and high electron mobility transistors (2013) (148)
- Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth (1999) (146)
- (Ga,Mn)As as a digital ferromagnetic heterostructure (2000) (144)
- Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon (2005) (143)
- Epitaxial growth of PbTiO 3 thin films on (001) SrTiO 3 from solution precursors (1995) (142)
- MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/V s at room temperature (2019) (136)
- Structural and morphological characteristics of planar (112̄0) a-plane gallium nitride grown by hydride vapor phase epitaxy (2003) (135)
- Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs (2007) (131)
- Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy (2011) (131)
- Measurement of polarization charge and conduction-band offset at InxGa1−xN/GaN heterojunction interfaces (2004) (130)
- Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films (2003) (129)
- A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN (2007) (128)
- The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior (2014) (126)
- Improved quality (112¯0)a-plane GaN with sidewall lateral epitaxial overgrowth (2006) (125)
- β-(AlxGa1−x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy (2015) (125)
- High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm (2011) (125)
- Ge doping of β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy (2017) (121)
- 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication. (2015) (121)
- Scaling laws for the reduction of threading dislocation densities in homogeneous buffer layers (1996) (121)
- Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact (2015) (121)
- Microstructural evolution of a-plane GaN grown on a-plane SiC by metalorganic chemical vapor deposition (2004) (121)
- Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques (2005) (119)
- Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes (2000) (118)
- The efficiency challenge of nitride light‐emitting diodes for lighting (2015) (118)
- High luminous flux from single crystal phosphor-converted laser-based white lighting system. (2016) (118)
- Defect reduction in nonpolar a-plane GaN films using in situ SiNx nanomask (2006) (116)
- Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth (2010) (116)
- Demonstration of Nonpolar GaN-Based Vertical-Cavity Surface-Emitting Lasers (2012) (115)
- GROWTH-RELATED STRESS AND SURFACE MORPHOLOGY IN HOMOEPITAXIAL SRTIO3 FILMS (1996) (113)
- Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy (2000) (111)
- Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3 modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy (2017) (111)
- Hydrogen passivation of deep levels in n–GaN (2000) (111)
- Role of inclined threading dislocations in stress relaxation in mismatched layers (2005) (109)
- Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells (2004) (106)
- Effect of threading dislocation density on Ni∕n-GaN Schottky diode I-V characteristics (2006) (106)
- Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers (2000) (105)
- Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy - eScholarship (2006) (105)
- Ge-Doped ${\beta }$ -Ga2O3 MOSFETs (2017) (104)
- Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure (2012) (104)
- Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy (2003) (104)
- Growth and characterization of N-polar InGaN/GaN multiquantum wells (2007) (103)
- Relative coherency strain and phase transformation history in epitaxial ferroelectric thin films (1996) (102)
- Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer (1999) (102)
- High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers (1999) (102)
- High power and high efficiency green light emitting diode on free‐standing semipolar (11$ \bar 2 $2) bulk GaN substrate (2007) (101)
- High electron mobility In2O3(001) and (111) thin films with nondegenerate electron concentration (2010) (101)
- Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures (2003) (98)
- High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (101̄1̄) Bulk GaN Substrates (2007) (97)
- Modeling cross-hatch surface morphology in growing mismatched layers (2002) (97)
- Basal Plane Stacking-Fault Related Anisotropy in X-ray Rocking Curve Widths of m-Plane GaN (2008) (97)
- 2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system. (2015) (97)
- Domain pattern formation in epitaxial rhombohedral ferroelectric films. II. Interfacial defects and energetics (1998) (97)
- BaSrTiO/sub 3/ interdigitated capacitors for distributed phase shifter applications (2000) (96)
- Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes (2007) (96)
- High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals (2010) (96)
- Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates (2009) (95)
- Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded InGaN∕GaN multi-quantum wells (2006) (95)
- β-Ga2O3 growth by plasma-assisted molecular beam epitaxya) (2010) (94)
- High Brightness Blue InGaN/GaN Light Emitting Diode on Nonpolar m-plane Bulk GaN Substrate (2007) (93)
- Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope (2002) (92)
- Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE (2004) (92)
- Threading dislocation reduction in strained layers (1999) (92)
- Ion implanted AlGaN-GaN HEMTs with nonalloyed Ohmic contacts (2005) (91)
- Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition (1998) (91)
- Anisotropic strain and phonon deformation potentials in GaN (2007) (90)
- Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction (2000) (90)
- In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction (2008) (90)
- In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN (2007) (90)
- Hybrid tunnel junction contacts to III–nitride light-emitting diodes (2016) (90)
- Pulsed laser deposition of oriented In2O3 on (001) InAs, MgO, and yttria‐stabilized zirconia (1993) (89)
- Microstructural development in sol-gel derived lead zirconate titanate thin films: The role of precursor stoichiometry and processing environment (1996) (89)
- High-Power, Low-Efficiency-Droop Semipolar (2021) Single-Quantum-Well Blue Light-Emitting Diodes (2012) (89)
- Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy (2014) (89)
- Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates (2005) (88)
- Microstructural instability in single-crystal thin films (1996) (88)
- High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate (2007) (87)
- Effect of nitridation on polarity, microstructure, and morphology of AlN films (2004) (87)
- Causes of incorrect carrier-type identification in van der Pauw–Hall measurements (2008) (87)
- Dislocation- and crystallographic-dependent photoelectrochemical wet etching of gallium nitride (2004) (87)
- Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy (2005) (86)
- HIGH MOBILITY TWO-DIMENSIONAL ELECTRON GAS IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (1999) (86)
- Size-independent peak efficiency of III-nitride micro-light-emitting-diodes using chemical treatment and sidewall passivation (2019) (85)
- Spatially-resolved spectroscopic measurements of Ec − 0.57 eV traps in AlGaN/GaN high electron mobility transistors (2013) (85)
- Crystallographic orientation of epitaxial BaTiO3 films: The role of thermal‐expansion mismatch with the substrate (1995) (84)
- Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN (1995) (84)
- Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy (2008) (84)
- AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm (2009) (84)
- Morphological and Structural Transitions in GaN Films Grown on Sapphire by Metal-Organic Chemical Vapor Deposition (1996) (84)
- Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer (2004) (83)
- CATHODOLUMINESCENCE MAPPING OF EPITAXIAL LATERAL OVERGROWTH IN GALLIUM NITRIDE (1999) (82)
- Growth and characterization of (111) and (001) oriented MgO films on (001) GaAs (1993) (82)
- Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy (2012) (81)
- Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition (2008) (81)
- LATERAL ORDERING OF QUANTUM DOTS BY PERIODIC SUBSURFACE STRESSORS (1999) (80)
- Double embedded photonic crystals for extraction of guided light in light-emitting diodes (2012) (79)
- Excitation wavelength dependence of terahertz emission from InN and InAs (2006) (79)
- AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes (2007) (79)
- Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy (2004) (79)
- Nonpolar InxGa1-xN/GaN(1(1)over-bar00) multiple quantum wells grown on gamma-LiAlO2(100) by plasma-assisted molecular-beam epitaxy (2003) (78)
- Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature (2006) (78)
- Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors (2011) (78)
- Effect of doping and polarization on carrier collection in InGaN quantum well solar cells (2011) (78)
- ELECTRICAL CHARACTERIZATION OF BATIO3 HETEROEPITAXIAL THIN FILMS BY HYDROTHERMAL SYNTHESIS (1999) (78)
- High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes (2011) (77)
- Characterization of blue-green m-plane InGaN light emitting diodes (2009) (77)
- High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy (2014) (77)
- Gallium vacancy complexes as a cause of Shockley-Read-Hall recombination in III-nitride light emitters (2016) (77)
- Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture (2015) (77)
- Controlled ordering and positioning of InAs self-assembled quantum dots (2000) (77)
- Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter (2020) (77)
- Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes (2017) (76)
- Low temperature/low pressure hydrothermal synthesis of barium titanate: Powder and heteroepitaxial thin films (1995) (76)
- Progress in the growth of nonpolar gallium nitride (2007) (75)
- Role of oxygen in the OFF-state degradation of AlGaN/GaN high electron mobility transistors (2011) (74)
- Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs (2013) (74)
- High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH3-based molecular beam epitaxy (2011) (74)
- Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN (2007) (74)
- Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN (2010) (73)
- High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates (2010) (73)
- Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates (2006) (72)
- Electron transport properties of antimony doped SnO2 single crystalline thin films grown by plasma-assisted molecular beam epitaxy (2009) (72)
- Composition determination of β-(AlxGa1−x)2O3 layers coherently grown on (010) β-Ga2O3 substrates by high-resolution X-ray diffraction (2016) (72)
- Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN (2005) (71)
- Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction (2015) (71)
- Stimulated Emission at Blue-Green (480 nm) and Green (514 nm) Wavelengths from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures (2008) (71)
- Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures (2005) (71)
- Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation (2006) (71)
- Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells (2012) (71)
- Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy (2007) (71)
- Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes (2011) (71)
- GaN HBT: toward an RF device (2001) (70)
- Improved growth rates and purity of basic ammonothermal GaN (2014) (70)
- Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (2018) (69)
- High-Modulation-Efficiency, Integrated Waveguide Modulator–Laser Diode at 448 nm (2016) (69)
- Chlorine-based dry etching of β-Ga2O3 (2016) (68)
- Theory of microstructure and mechanics of the ...a1/a2/a1/a2... domain pattern in epitaxial ferroelectric and ferroelastic films (1996) (68)
- Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition (2003) (68)
- Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes (2010) (68)
- Evaluation of threading dislocation densities in In- and N-face InN (2010) (67)
- Depletion of the In2O3(001) and (111) surface electron accumulation by an oxygen plasma surface treatment (2011) (67)
- Lattice Tilt and Misfit Dislocations in (1122) Semipolar GaN Heteroepitaxy (2010) (67)
- 444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer (2012) (67)
- High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates (2013) (66)
- Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes (2011) (65)
- Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire (2000) (65)
- Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors. (2017) (65)
- Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment (2006) (65)
- Green Semipolar (202̄1̄) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth (2013) (64)
- Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction (2016) (64)
- Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate (2005) (64)
- High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes (2010) (63)
- Optical waveguide simulations for the optimization of InGaN-based green laser diodes (2010) (63)
- High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels (2010) (63)
- High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy (2007) (63)
- Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth (2007) (63)
- Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition (2007) (62)
- Growth of high quality N-polar AlN(0001¯) on Si(111) by plasma assisted molecular beam epitaxy (2009) (61)
- Hole transport and photoluminescence in Mg-doped InN (2010) (61)
- Plasma-assisted molecular beam epitaxy and characterization of SnO2 (101) on r-plane sapphire (2008) (61)
- Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD (1998) (61)
- Lighting for the 21st century with laser diodes based on non-basal plane orientations of GaN (2015) (61)
- GaN quantum dot density control by rf-plasma molecular beam epitaxy (2004) (60)
- Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope (2003) (59)
- Enhancement-Mode N-Polar GaN MISFETs With Self-Aligned Source/Drain Regrowth (2011) (59)
- Many-electron effects on the dielectric function of cubic In 2 O 3 : Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift (2016) (59)
- Molecular-beam epitaxy of p-type m-plane GaN (2005) (59)
- Effects of Threading Dislocation Density on the Gate Leakage of AlGaN/GaN Heterostructures for High Electron Mobility Transistors (2011) (59)
- Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers (2017) (58)
- Atom probe analysis of AlN interlayers in AlGaN/AlN/GaN heterostructures (2013) (58)
- Molecular beam epitaxy for high-performance Ga-face GaN electron devices (2013) (58)
- Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching (2014) (58)
- An approach to threading dislocation ‘‘reaction kinetics’’ (1996) (58)
- Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy (2002) (57)
- Valence-band density of states and surface electron accumulation in epitaxial SnO2 films (2014) (57)
- High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration (2014) (57)
- The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN (2009) (57)
- AlGaN Channel High Electron Mobility Transistors: Device Performance and Power-Switching Figure of Merit (2008) (56)
- Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells (2012) (56)
- Modeling of Threading Dislocation Density Reduction in Heteroepitaxial Layers I. Geometry and Crystallography (1996) (56)
- Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact. (2016) (56)
- Growth of p-type and n-type m-plane GaN by molecular beam epitaxy (2006) (56)
- Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN (2002) (55)
- Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures (2012) (55)
- Effect of charged dislocation scattering on electrical and electrothermal transport in n-type InN (2011) (55)
- Characterization of an AlGaN/GaN two-dimensional electron gas structure (2000) (55)
- 1550-nm InGaAsP multi-quantum-well structures selectively grown on v-groove-patterned SOI substrates (2017) (55)
- In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN (2000) (55)
- Capture Kinetics of Electron Traps in MBE‐Grown n‐GaN (2001) (55)
- High-power blue laser diodes with indium tin oxide cladding on semipolar (202¯1¯) GaN substrates (2015) (54)
- Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation (2009) (54)
- Mechanisms of deformation and failure in carbon-matrix composites subject to tensile and shear loading (1995) (54)
- Rutile films grown by molecular beam epitaxy on GaN and AlGaN∕GaN (2005) (53)
- Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate (2011) (53)
- Ammonothermal growth of bulk GaN (2008) (53)
- Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth (2004) (53)
- Localized exciton dynamics in nonpolar (112¯0) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth (2005) (53)
- Critical Thickness for Onset of Plastic Relaxation in (1122) and (2021) Semipolar AlGaN Heterostructures (2010) (53)
- Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire (1998) (53)
- Blue-Green InGaN/GaN Laser Diodes on Miscut m-Plane GaN Substrate (2009) (53)
- Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers (2012) (53)
- Real-time X-ray scattering studies of surface structure during metalorganic chemical vapor deposition of GaN (1999) (53)
- Ammonothermal Growth of GaN on an over-1-inch Seed Crystal (2005) (52)
- GdN (1 1 1) heteroepitaxy on GaN (0 0 0 1) by N2 plasma and NH3 molecular beam epitaxy (2009) (52)
- Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors (2004) (52)
- Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates (2007) (52)
- Stability of (1100) m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition (2006) (52)
- Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment - eScholarship (2003) (51)
- Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures (2008) (51)
- Plasma-assisted molecular beam epitaxy of high quality In2O3(001) thin films on Y-stabilized ZrO2(001) using In as an auto surfactant (2009) (51)
- Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy (2011) (51)
- Impact of proton irradiation on deep level states in n-GaN (2013) (50)
- Higher efficiency InGaN laser diodes with an improved quantum well capping configuration (2002) (50)
- EFFECT OF LATTICE MISMATCH ON THE EPITAXY OF SOL-GEL LINBO3 THIN FILMS (1997) (50)
- High luminous efficacy green light-emitting diodes with AlGaN cap layer. (2016) (50)
- Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition (2008) (50)
- Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments. (2020) (50)
- Comparison of deep level incorporation in ammonia and rf‐plasma assisted molecular beam epitaxy n‐GaN films (2008) (50)
- Impact of Substrate Miscut on the Characteristic of m-plane InGaN/GaN Light Emitting Diodes (2007) (49)
- Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy (2006) (49)
- Uniformity and control of surface morphology during growth of GaN by molecular beam epitaxy (2005) (49)
- Domain Patterns in (111) Oriented Tetragonal Ferroelectric Films (1999) (48)
- AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates (2020) (48)
- Direct measurement of the polarization charge in AlGaN/GaN heterostructures using capacitance–voltage carrier profiling (2002) (48)
- n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy (2018) (48)
- Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well (2009) (48)
- Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy (2006) (48)
- Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition (2009) (47)
- Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3 (2019) (47)
- Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes (2011) (47)
- Synthesis and characterization of PbTiO 3 powders and heteroepitaxial thin films by hydrothermal synthesis (1999) (47)
- Effect of AlN nucleation layer growth conditions on buffer leakage in AlGaN∕GaN high electron mobility transistors grown by molecular beam epitaxy (MBE) (2005) (47)
- High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth. (2016) (47)
- Thermally enhanced blue light-emitting diode (2015) (47)
- Intercalation of hexagonal boron nitride with potassium (1989) (46)
- Mg-rich precipitates in the p-type doping of InGaN-based laser diodes (2002) (46)
- Ga adsorbate on "0001… GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction (2006) (46)
- Growth study and impurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition (2011) (46)
- Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy (2000) (46)
- Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film (2019) (46)
- Hydrothermal synthesis of heteroepitaxial Pb(Zr x Ti 1− x )O 3 thin films at 90–150 °C (1997) (46)
- Polarity inversion of N-face GaN using an aluminum oxide interlayer (2010) (45)
- Characterisation of Multiple Carrier Transport in Indium Nitride Grown by Molecular Beam Epitaxy (2006) (45)
- Comparison of InGaN/GaN light emitting diodes grown on m ‐plane and a ‐plane bulk GaN substrates (2008) (45)
- Pulsed laser deposition of epitaxial silicon/h‐Pr2O3/silicon heterostructures (1993) (45)
- Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors (2008) (45)
- Observation of growth modes during metal-organic chemical vapor deposition of GaN (1999) (45)
- Elastic fields of quantum dots in subsurface layers (2001) (45)
- p-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents (2010) (44)
- Schottky barrier height of Ni to β-(AlxGa1−x)2O3 with different compositions grown by plasma-assisted molecular beam epitaxy (2017) (44)
- Surface structure and chemical states of a-plane and c-plane InN films (2009) (44)
- Plasma-assisted molecular beam epitaxy of SnO2 on TiO2 (2008) (44)
- Plasma‐assisted molecular beam epitaxy of Sn‐doped In2O3: Sn incorporation, structural changes, doping limits, and compensation (2014) (44)
- Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes (2013) (44)
- Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (1122) Gallium Nitride Substrates (2008) (44)
- Study of the Au Schottky contact formation on oxygen plasma treated n-type SnO2 (101) thin films (2010) (44)
- Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC (2006) (43)
- Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells (2013) (43)
- High-brightness semipolar (2021¯) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications. (2016) (43)
- Misfit dislocation formation at heterointerfaces in (Al,In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates (2011) (43)
- Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates (2010) (43)
- Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5% (2004) (43)
- Polarity control during molecular beam epitaxy growth of Mg-doped GaN (2003) (42)
- Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication (2020) (42)
- Efficient Semipolar (11-22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11-22) GaN/Sapphire Templates. (2017) (42)
- Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH3 molecular beam epitaxy (2015) (42)
- Nonpolar a-plane p-type GaN and p-n Junction Diodes (2004) (42)
- Metal-oxide catalyzed epitaxy (MOCATAXY): the example of the O plasma-assisted molecular beam epitaxy of β-(AlxGa1−x)2O3/β-Ga2O3 heterostructures (2018) (41)
- Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures (2012) (41)
- Growth of gallium nitride via fluid transport in supercritical ammonia (2005) (41)
- ZrO2 gate dielectrics produced by ultraviolet ozone oxidation for GaN and AlGaN∕GaN transistors (2006) (41)
- m-Plane GaN-Based Blue Superluminescent Diodes Fabricated Using Selective Chemical Wet Etching (2009) (41)
- N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier (2008) (41)
- Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies (2013) (41)
- Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire (2005) (41)
- Nucleation of islands and continuous high-quality In2O3(001) films during plasma-assisted molecular beam epitaxy on Y-stabilized ZrO2(001) (2010) (41)
- A new X-band 180/spl deg/ high performance phase shifter using (Ba, Sr)TiO/sub 3/ thin films (2002) (41)
- Observation of columnar microstructure in lattice-matched InAlN/GaN grown by plasma assisted molecular beam epitaxy (2012) (41)
- Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy (2012) (41)
- Fracture toughness of chemically vapor-deposited diamond (1991) (41)
- GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy (2014) (40)
- Observation of crystallographic wing tilt in cantilever epitaxy of GaN on silicon carbide and silicon (111) substrates (2001) (40)
- Continuous evolution of Ga adlayer coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN (2005) (40)
- Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals (2015) (40)
- Influence of stoichiometry on the dielectric properties of sputtered strontium titanate thin films (2003) (40)
- Ga Adlayer Governed Surface Defect Evolution of (0001)GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy (2005) (40)
- Modeling crosshatch surface morphology in growing mismatched layers. Part II: Periodic boundary conditions and dislocation groups (2004) (40)
- Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy (2003) (40)
- Gallium nitride materials - progress, status, and potential roadblocks (2002) (40)
- Microstructural development of BaTiO 3 powders synthesized by aqueous methods (1996) (39)
- Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature (2010) (39)
- Impact of strain on free-exciton resonance energies in wurtzite AlN (2007) (39)
- Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates (2013) (39)
- Surface structured optical coatings with near-perfect broadband and wide-angle antireflective properties. (2014) (39)
- Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering (1998) (39)
- Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors (2001) (39)
- p‐type conduction in stacking‐fault‐free m ‐plane GaN (2007) (39)
- Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture (2016) (39)
- Modeling of twinning in epitaxial (001)-oriented La0.67Sr0.33MnO3 thin films (2005) (39)
- Low 1014 cm−3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD (2020) (39)
- Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN (2008) (39)
- Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding (2009) (39)
- Maskless lateral epitaxial overgrowth of high-aluminum-content AlxGa1−xN (2004) (39)
- Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy (2014) (38)
- Curvature and bow of bulk GaN substrates (2016) (38)
- Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices (2014) (38)
- Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells (2011) (38)
- Optical evidence for lack of polarization in (112¯0) oriented GaN∕(AlGa)N quantum structures (2005) (37)
- Schottky contacts to In2O3 (2014) (37)
- The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes (2012) (37)
- Impact of $\hbox{CF}_{4}$ Plasma Treatment on GaN (2007) (37)
- Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells (2015) (37)
- Development of Cross-Hatch Morphology During Growth of Lattice Mismatched Layers (2000) (37)
- GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition (2018) (36)
- Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals (2011) (36)
- Growth evolution in sidewall lateral epitaxial overgrowth (SLEO) (2007) (36)
- Effect of thermal strain on the ferroelectric phase transition in polycrystalline Ba0.5Sr0.5TiO3 thin films studied by Raman spectroscopy (2004) (36)
- Layer-by-layer growth of GaN induced by silicon (2000) (36)
- Quantitative observation and discrimination of AlGaN- and GaN-related deep levels in AlGaN∕GaN heterostructures using capacitance deep level optical spectroscopy (2006) (35)
- Access-Region Defect Spectroscopy of DC-Stressed N-Polar GaN MIS-HEMTs (2012) (35)
- Surface Structure of GaN(0001) in the Chemical Vapor Deposition Environment (1999) (35)
- Epitaxial Sb-doped SnO2 and Sn-doped In2O3 transparent conducting oxide contacts on GaN-based light emitting diodes (2016) (35)
- Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates (2005) (35)
- Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors (2011) (35)
- Let there be light--with gallium nitride: the 2014 Nobel Prize in Physics. (2014) (35)
- N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-art fT.LG product of 16.8 GHz-µm (2009) (35)
- Effects of growth temperature on Mg-doped GaN grown by ammonia molecular beam epitaxy (2012) (35)
- Growth regimes during homoepitaxial growth of GaN by ammonia molecular beam epitaxy (2012) (35)
- XPS study of Sb-/In-doping and surface pinning effects on the Fermi level in SnO2 (101) thin films (2011) (34)
- Growth of Bulk GaN Crystals by the Basic Ammonothermal Method (2007) (34)
- Atom probe tomography of nitride semiconductors (2017) (34)
- Effect of carrier gas and substrate misorientation on the structural and optical properties of m-plane InGaN/GaN light-emitting diodes (2010) (34)
- Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy (2012) (34)
- Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire (1996) (34)
- Next generation defect characterization in nitride HEMTs (2011) (34)
- Optical polarization characteristics of semipolar (3031) and (3031) InGaN/GaN light-emitting diodes. (2013) (33)
- Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy (2010) (33)
- Reduction in Thermal Droop Using Thick Single-Quantum-Well Structure in Semipolar (2021) Blue Light-Emitting Diodes (2012) (33)
- Non-Alloyed Schottky and Ohmic Contacts to As-Grown and Oxygen-Plasma Treated n-Type SnO2 (110) and (101) Thin Films (2009) (33)
- Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers (2012) (33)
- Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy (2010) (33)
- Characterization of individual threading dislocations in GaN using ballistic electron emission microscopy. (2001) (33)
- Optical properties of extended and localized states in m-plane InGaN quantum wells (2013) (33)
- High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy (2003) (33)
- Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz (2007) (33)
- Origin of electrons emitted into vacuum from InGaN light emitting diodes (2014) (33)
- Determination of Composition and Lattice Relaxation in Semipolar Ternary (In,Al,Ga)N Strained Layers from Symmetric X-ray Diffraction Measurements (2011) (33)
- Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition (2013) (33)
- Stress relaxation and critical thickness for misfit dislocation formation in (101¯0) and (3031¯) InGaN/GaN heteroepitaxy (2012) (32)
- Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source (2012) (32)
- High Power and High Efficiency Semipolar InGaN Light Emitting Diodes (2008) (32)
- Cracking of III-nitride layers with strain gradients (2006) (32)
- Mg acceptor doping of In2O3 and overcompensation by oxygen vacancies (2012) (32)
- Heteroepitaxial Growth of GaN on 6H‐SiC(0001) by Plasma‐Assisted Molecular Beam Epitaxy (2002) (32)
- Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well (2014) (31)
- Development of high performance green c-plane III-nitride light-emitting diodes. (2018) (31)
- Investigation of (110) SnO2 growth mechanisms on TiO2 substrates by plasma-assisted molecular beam epitaxy (2009) (31)
- Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs (2018) (31)
- Demonstration of high power blue-green light emitting diode on semipolar (1122) bulk GaN substrate (2007) (31)
- Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN (2009) (31)
- Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor (2012) (31)
- Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN (2015) (31)
- Growth and etching characteristics of (001) β-Ga2O3 by plasma-assisted molecular beam epitaxy (2017) (31)
- Phase shifters using (Ba,Sr)TiO/sub 3/ thin films on sapphire and glass substrates (2001) (31)
- Photoelectrochemical liftoff of LEDs grown on freestanding c-plane GaN substrates. (2016) (31)
- Electroluminescent measurement of the internal quantum efficiency of light emitting diodes (2009) (31)
- Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO2 on sapphire (2012) (31)
- Self-assembling quantum dot lattices through nucleation site engineering (2002) (31)
- Dynamic characteristics of 410 nm semipolar (202¯1¯) III-nitride laser diodes with a modulation bandwidth of over 5 GHz (2016) (30)
- Compensating vacancy defects in Sn- and Mg-doped In2O3 (2014) (30)
- Defect-mediated surface morphology of nonpolar m-plane GaN (2007) (30)
- High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes (2011) (30)
- High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy (2015) (30)
- Step-flow growth of ZnO(0 0 0 1) on GaN(0 0 0 1) by metalorganic chemical vapor epitaxy (2008) (29)
- Quasi-equilibrium crystal shapes and kinetic Wulff plots for gallium nitride grown by hydride vapor phase epitaxy (2013) (29)
- High-isolation BST-MEMS switches (2002) (29)
- Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy (2020) (29)
- Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition (2010) (29)
- High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes (2010) (29)
- Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures (2011) (29)
- Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $g_{m}$ , and 0.66- $\Omega\cdot \hbox{mm}$ $R_{\rm on}$ (2012) (29)
- Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance (2009) (29)
- Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy (2006) (29)
- The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy (2002) (29)
- LiNbO3 thin film growth on (0001)-GaN (2005) (29)
- Prospects for 100% wall-plug efficient III-nitride LEDs. (2018) (29)
- Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs (2017) (29)
- High Extraction Efficiency GaN-Based Photonic-Crystal Light-Emitting Diodes: Comparison of Extraction Lengths between Surface and Embedded Photonic Crystals (2010) (29)
- Hall and Seebeck measurement of ap-nlayer stack: Determining InN bulk hole transport properties in the presence of a strong surface electron accumulation layer (2012) (29)
- Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6 µm/h (2014) (29)
- Comparison of time‐resolved photoluminescence from InGaN single quantum wells grown on nonpolar and semipolar bulk GaN substrates (2009) (29)
- Modeling of Threading Dislocation Density Reduction in Heteroepitaxial Layers (1997) (29)
- Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC (2018) (28)
- Modeling and analysis for thermal management in gallium oxide field-effect transistors (2020) (28)
- Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm (2012) (28)
- High power N-face GaN high electron mobility transistors grown by molecular beam epitaxy with optimization of AlN nucleation (2009) (28)
- MICROSTRUCTURAL DEVELOPMENT OF BATIO3 HETEROEPITAXIAL THIN FILMS BY HYDROTHERMAL SYNTHESIS (1998) (28)
- Investigation of unintentional Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy (2019) (28)
- Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts (2015) (28)
- Atom Probe Tomography of Compound Semiconductors for Photovoltaic and Light-Emitting Device Applications (2012) (27)
- Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy (2015) (27)
- Modeling the extended defect evolution in lateral epitaxial overgrowth of GaN: Subgrain stability (2003) (27)
- Anisotropic etching of β-Ga2O3 using hot phosphoric acid (2019) (27)
- Phase selection of microcrystalline GaN synthesized in supercritical ammonia (2006) (27)
- Infrared absorption of hydrogen-related defects in ammonothermal GaN (2016) (27)
- Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy (2015) (27)
- InGaN/GaN Blue Laser Diode Grown on Semipolar (3031) Free-Standing GaN Substrates (2010) (27)
- Optical polarization of m ‐plane In‐GaN/GaN light‐emitting diodes characterized via confocal microscope (2008) (27)
- THz generation from InN films due to destructive interference between optical rectification and photocurrent surge (2009) (27)
- Polarization field screening in thick (0001) InGaN/GaN single quantum well light-emitting diodes (2016) (26)
- Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN (2011) (26)
- Enhanced terahertz radiation from high stacking fault density nonpolar GaN (2008) (26)
- Seeded growth of GaN by the basic ammonothermal method (2007) (26)
- Growth of epitaxial MgO films on Sb‐passivated (001)GaAs: Properties of the MgO/GaAs interface (1995) (26)
- Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures (2012) (26)
- Chip Shaping for Light Extraction Enhancement of Bulk c-Plane Light-Emitting Diodes (2012) (26)
- Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures (2016) (26)
- 384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer (2012) (26)
- Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques (2007) (26)
- High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells (2015) (26)
- Metal oxide catalyzed epitaxy (MOCATAXY) of β-Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy (2020) (26)
- Non‐polar‐oriented InGaN light‐emitting diodes for liquid‐crystal‐display backlighting (2008) (26)
- Basic ammonothermal GaN growth in molybdenum capsules (2016) (26)
- Step bunching on the vicinal GaN(0001) surface Phys. Rev. B: Rapid Communications 62 (2000) R10661. (2000) (25)
- N‐face high electron mobility transistors with a GaN‐spacer (2007) (25)
- Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W (2016) (25)
- Synthesis and Characterization of Highly Resistive Epitaxial Indium-Doped SnO2 (2010) (25)
- Observation of arsenic precipitates in GaInAs grown at low temperature on InP (1993) (25)
- Revisiting the origin of satellites in core-level photoemission of transparent conducting oxides: The case of n -doped SnO2 (2017) (25)
- N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates (2015) (25)
- Three dimensional simulation on the transport and quantum efficiency of UVC-LEDs with random alloy fluctuations (2018) (25)
- Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography (2017) (25)
- Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices (2012) (25)
- Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth (2008) (24)
- Anisotropy of the electron effective mass in rutile SnO2 determined by infrared ellipsometry (2014) (24)
- Surface, bulk, and interface electronic properties of nonpolar InN (2010) (24)
- Buried stressors in nitride semiconductors: Influence on electronic properties (2005) (24)
- Common Themes in ther Epitaxial Growth of Oxides on Semiconductors (1994) (24)
- Dopant activation and ultralow resistance ohmic contacts to Si-ion-implanted GaN using pressurized rapid thermal annealing (2004) (24)
- Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy (2011) (24)
- Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography (2013) (24)
- Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane (2013) (24)
- Hierarchical domain structures and in situ domain migration in the antiferroelectric ceramic PLSnZT (1993) (24)
- Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film (2017) (23)
- Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (1 12 2) Plane Gallium Nitrides (2009) (23)
- Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN (2001) (23)
- Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission (2012) (23)
- Suppressing void defects in long wavelength semipolar (202¯1¯) InGaN quantum wells by growth rate optimization (2013) (23)
- Electronic structure and effective masses of InN under pressure (2008) (23)
- Threading dislocation reduction mechanisms in low-temperature-grown GaAs (1999) (23)
- Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With $f_{T}$ of 275 GHz (2012) (23)
- Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment (2014) (23)
- Near-field investigation of spatial variations of (202̄1̄) InGaN quantum well emission spectra (2013) (23)
- Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN (2016) (23)
- Experimental Demonstration of III-Nitride Hot-Electron Transistor With GaN Base (2011) (23)
- High wall-plug efficiency blue III-nitride LEDs designed for low current density operation. (2017) (23)
- Reduced-droop green III–nitride light-emitting diodes utilizing GaN tunnel junction (2018) (23)
- In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN (2009) (23)
- Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy (2006) (23)
- Observation of impurity effects on the nucleation of arsenic precipitates in GaAs (1993) (22)
- AlGaN/AlN distributed bragg reflectors for deep ultraviolet wavelengths (2006) (22)
- Gallium adsorption onto (112̄0) gallium nitride surfaces (2004) (22)
- GaN‐based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization (2009) (22)
- Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (202¯1¯) III-nitride laser diodes with chemically assisted ion beam etched facets (2016) (22)
- Impact of CF 4 Plasma Treatment on GaN (2007) (22)
- RF Performance of Proton-Irradiated AlGaN/GaN HEMTs (2014) (22)
- Impact of carrier localization on radiative recombination times in semipolar (202¯1) plane InGaN/GaN quantum wells (2015) (22)
- Electrical and structural characterization of Mg-doped p-type Al0.69Ga0.31N films on SiC substrate (2007) (22)
- Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes (2004) (22)
- Photoelectrochemical Properties of Nonpolar and Semipolar GaN (2007) (22)
- High-Performance N-Face GaN Microwave MIS-HEMTs With > 70% Power-Added Efficiency (2009) (22)
- Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates (2010) (22)
- Optical properties of nonpolar a-plane GaN layers (2006) (22)
- Improvement of GaN-based laser diode facets by FIB polishing (1998) (22)
- Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy (2018) (22)
- Effect of p-doped overlayer thickness on RF-dispersion in GaN junction FETs (2002) (22)
- Electrical and optical properties of p-type InN (2011) (22)
- Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer (2010) (21)
- Growth of embedded photonic crystals for GaN-based optoelectronic devices (2009) (21)
- Semipolar ( 20 21 ¯ ) InGaN/GaN micro-photodetector for gigabit-per-second visible light communication (2019) (21)
- Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime (2014) (21)
- Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN∕GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth (2007) (21)
- Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide (2005) (21)
- Influence of Mg-doped barriers on semipolar (202¯1) multiple-quantum-well green light-emitting diodes (2011) (21)
- Calcium impurity as a source of non-radiative recombination in (In,Ga)N layers grown by molecular beam epitaxy (2016) (21)
- Current-induced spin polarization in gallium nitride (2008) (21)
- Nonpolar (11&1macr;0) a-Plane Gallium Nitride Thin Films Grown on (1&1macr;02) r-Plane Sapphire: Heteroepitaxy and Lateral Overgrowth (2002) (21)
- Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications (2016) (21)
- m-plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers (2009) (21)
- Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs (2019) (21)
- Metalorganic Chemical Vapor Deposition Conditions for Efficient Silicon Doping in High Al-Composition AlGaN Films (2005) (21)
- Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs (2012) (20)
- Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition (2019) (20)
- Study of interface barrier of SiNx/GaN interface for nitrogen-polar GaN based high electron mobility transistors (2008) (20)
- Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates (2013) (20)
- In vacancies in InN grown by plasma-assisted molecular beam epitaxy (2010) (20)
- True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy (2013) (20)
- Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN (2015) (20)
- Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications. (2018) (20)
- Anisotropy of tensile stresses and cracking in nonbasal plane AlxGa1−xN/GaN heterostructures (2010) (20)
- Investigation of the piezoelectric polarization in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy (2002) (19)
- Tunable Passive Integrated Circuits Using BST Thin Films (2002) (19)
- N-Polar GaN/AlN MIS-HEMT With $f_{\rm MAX}$ of 204 GHz for Ka-Band Applications (2011) (19)
- Plane Dependent Growth of GaN in Supercritical Basic Ammonia (2008) (19)
- Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia (2005) (19)
- High-performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates (2011) (19)
- Metalorganic chemical vapor deposition of Al2O3 using trimethylaluminum and O2 precursors: Growth mechanism and crystallinity (2014) (19)
- Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures (2007) (19)
- High responsivity A-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications (2009) (19)
- Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells (2006) (19)
- Status and perspectives of the ammonothermal growth of GaN substrates (2008) (19)
- Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells (2011) (19)
- Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure (2000) (19)
- AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate (2004) (19)
- Ordinary and extraordinary dielectric functions of rutile SnO2 up to 20 eV (2014) (19)
- Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes (2010) (19)
- Electroluminescence enhancement of (112¯2) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates (2011) (19)
- Correlation of a generation-recombination center with a deep level trap in GaN (2015) (18)
- Stability of materials in supercritical ammonia solutions (2016) (18)
- Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN (2002) (18)
- Dielectric function tensor (1.5 eV to 9.0 eV), anisotropy, and band to band transitions of monoclinic β-(AlxGa1–x)2O3 (x ≤ 0.21) films (2019) (18)
- Strain relaxation of InxGa1−xAs during lateral oxidation of underlying AlAs layers (1999) (18)
- Impact of Point Defects on the Luminescence Properties of (Al,Ga)N (2008) (18)
- Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics. (2020) (18)
- Cleaved GaN facets by wafer fusion of GaN to InP (1996) (18)
- Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy (2014) (18)
- Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition (2012) (18)
- Structural and electrical characterization of a‐plane GaN grown on a‐plane SiC (2003) (18)
- Electron transport in semiconducting SnO 2 : Intentional bulk donors and acceptors, the interface, and the surface - CORRIGENDUM (2012) (18)
- Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy (2019) (18)
- Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) (2002) (18)
- $f_{T}$ and $f_{\rm MAX}$ of 47 and 81 GHz , Respectively, on N-Polar GaN/AlN MIS-HEMT (2009) (18)
- Ultrafast dynamics of hole self-localization in β-Ga2O3 (2020) (18)
- Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes (2014) (18)
- Interwell carrier transport in InGaN/(In)GaN multiple quantum wells (2019) (18)
- Optical anisotropy of A‐ and M‐plane InN grown on free‐standing GaN substrates (2010) (18)
- Liquid Precursor Route for Hetero‐epitaxy of Zr(Y)O2 Thin Films on (001) Cubic Zirconia (1993) (18)
- Electrically pumped distributed feedback nitride lasers employing embedded dielectric gratings (1999) (18)
- Acidic ammonothermal growth of gallium nitride in a liner-free molybdenum alloy autoclave (2016) (18)
- Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates (2000) (18)
- Vertical β-Ga2O3 field plate Schottky barrier diode from metal-organic chemical vapor deposition (2021) (18)
- High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs (2016) (18)
- Growth diagram of N-face GaN (0001¯) grown at high rate by plasma-assisted molecular beam epitaxy (2014) (17)
- Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy (2008) (17)
- Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy (2016) (17)
- A new system for sodium flux growth of bulk GaN. Part I: System development (2016) (17)
- A theoretical model for threading dislocation reduction during selective area growth (1997) (17)
- Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition (2010) (17)
- Growth and fabrication of short-wavelength UV LEDs (2004) (17)
- 1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions (2011) (17)
- Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped β-Ga2O3 (2019) (17)
- Effect of Substrate Miscut on the Direct Growth of Semipolar (10-1-1) GaN on (100) MgAl2O4 by Metalorganic Chemical Vapor Deposition (2006) (16)
- On the solubility of gallium nitride in supercritical ammonia–sodium solutions (2016) (16)
- A new system for sodium flux growth of bulk GaN. Part II: in situ investigation of growth processes (2016) (16)
- X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE (2008) (16)
- Terahertz Radiation from Nonpolar InN Due to Drift in an Intrinsic In-Plane Electric Field (2010) (16)
- Etching of Ga-face and N-face GaN by Inductively Coupled Plasma (2006) (16)
- NH3-rich growth of InGaN and InGaN/GaN superlattices by NH3-based molecular beam epitaxy (2012) (16)
- Anomalous Output Conductance in N-Polar GaN High Electron Mobility Transistors (2012) (16)
- Self-Aligned Technology for N-Polar GaN/Al(Ga)N MIS-HEMTs (2011) (16)
- Diffuse x-ray scattering from statistically inhomogeneous distributions of threading dislocations beyond the ergodic hypothesis (2008) (16)
- Realization of high hole concentrations in Mg doped semipolar (101¯1¯) GaN (2006) (16)
- Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy (2009) (16)
- Substrate Reactivity and “Controlled Contamination” in Metalorganic Chemical Vapor Deposition of GaN on Sapphire (1998) (15)
- Stacking faults and interface roughening in semipolar (202¯1¯) single InGaN quantum wells for long wavelength emission (2014) (15)
- Cleaved and etched facet nitride laser diodes (1998) (15)
- Erratum: Nonpolar In x Ga 1-x N/GaN(11̄00) multiple quantum wells grown on γ-LiAlO 2 (100) by plasma-assisted molecular-beam epitaxy [Phys. Rev. B 67, 041306(R) (2003)] (2004) (15)
- Crystallization behavior of Li 1–5 x Ta 1+x O 3 glasses synthesized from liquid precursors (1996) (15)
- Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors (2016) (15)
- Onset of plastic relaxation in semipolar (112¯2) InxGa1−xN/GaN heterostructures (2014) (15)
- MOCVD Growth and Properties of InGaN/GaN Multi-Quantum Wells (1997) (15)
- High germanium doping of GaN films by ammonia molecular beam epitaxy (2019) (15)
- Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells (2015) (15)
- Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations (2010) (15)
- Metalorganic chemical vapor deposition grown n-InGaN/n-GaN tunnel junctions for micro-light-emitting diodes with very low forward voltage (2020) (15)
- Faceting control by the stoichiometry influence on the surface free energy of low-index bcc-In2O3 surfaces (2016) (15)
- Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz (2011) (15)
- Desorption behavior of antimony multilayer passivation on GaAs (001) (1997) (15)
- Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers (2018) (15)
- Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy (2008) (15)
- Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition (2003) (15)
- Control of crystallographic tilt in GaN grown on Si (111) by cantilever epitaxy (2002) (15)
- Critical thickness for the formation of misfit dislocations originating from prismatic slip in semipolar and nonpolar III-nitride heterostructures (2016) (15)
- Metalorganic chemical vapor deposition of ZnO(0001) thin films on GaN(0001) templates and ZnO(0001) substrates (2008) (14)
- H2O vapor assisted growth of β-Ga2O3 by MOCVD (2020) (14)
- Enhancing the Light Extraction Efficiency of Blue Semipolar (1011) Nitride-Based Light Emitting Diodes through Surface Patterning (2009) (14)
- Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells (2017) (14)
- Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode (2005) (14)
- Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence (2014) (14)
- Plasma‐assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades (2016) (14)
- Maskless Lateral Epitaxial Overgrowth of GaN on Sapphire (1999) (14)
- Stable vicinal step orientations in m-plane GaN (2015) (14)
- Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy (2006) (14)
- Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy (2012) (14)
- Influence of growth conditions and polarity on interface-related electron density in InN (2008) (14)
- Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation (2007) (14)
- Direct Measurement of Nanoscale Lateral Carrier Diffusion: Toward Scanning Diffusion Microscopy (2017) (14)
- A donor-like trap at the InGaN/GaN interface with net negative polarization and its possible consequence on internal quantum efficiency (2013) (14)
- Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication (2015) (14)
- 7.4-Gbit/s Visible-Light Communication Utilizing Wavelength-Selective Semipolar Micro-Photodetector (2020) (14)
- Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using A Two-Step Process (1998) (14)
- Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates (2006) (14)
- Calcium as a nonradiative recombination center in InGaN (2017) (14)
- Size-independent low voltage of InGaN micro-light-emitting diodes with epitaxial tunnel junctions using selective area growth by metalorganic chemical vapor deposition. (2020) (14)
- Disorder effects in nitride semiconductors: impact on fundamental and device properties (2020) (14)
- 2.5λ microcavity InGaN light-emitting diodes fabricated by a selective dry-etch thinning process (2007) (14)
- Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells (2013) (14)
- Reduction of carbon proximity effects by including AlGaN back barriers in HEMTs on free-standing GaN (2013) (14)
- Demonstration of low resistance ohmic contacts to p-type (202̄1̄) GaN (2015) (13)
- Semipolar InGaN-based superluminescent diodes for solid-state lighting and visible light communications (2017) (13)
- Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy (2001) (13)
- Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts (2016) (13)
- Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient (2007) (13)
- Lateral oxidation kinetics of AlAsSb and related alloys lattice matched to InP (2001) (13)
- Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202¯1) AlGaN/GaN buffer layers (2015) (13)
- High-power LEDs using Ga-doped ZnO current-spreading layers (2016) (13)
- Donors and deep acceptors in β-Ga 2 O 3 (2018) (13)
- Growth of coherent BGaN films using BBr3 gas as a boron source in plasma assisted molecular beam epitaxy (2017) (13)
- Size-independent peak external quantum efficiency (>2%) of InGaN red micro-light-emitting diodes with an emission wavelength over 600 nm (2021) (13)
- Comparison of the spectral and temporal emission characteristics of homoepitaxial and heteroepitaxial ZnO nanowires (2011) (13)
- Crystal quality and growth evolution of aluminum nitride on silicon carbide (2006) (13)
- Low damage dry etch for III-nitride light emitters (2015) (13)
- Blue and aquamarine stress-relaxed semipolar (112¯2) laser diodes (2013) (12)
- Demonstration of Electrically Injected Semipolar Laser Diode Grown on Low Cost and Scalable Sapphire Substrates. (2019) (12)
- Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy (2002) (12)
- Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method (2007) (12)
- State-of-the-art continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes (2010) (12)
- Computer simulation of threading dislocation density reduction in heteroepitaxial layers (1997) (12)
- Relaxation enhancing interlayers (REIs) in threading dislocation reduction (2000) (12)
- Intensity dependent time‐resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a‐plane and planar c‐plane GaN (2005) (12)
- New Atom Probe Tomography Reconstruction Algorithm for Multilayered Samples: Beyond the Hemispherical Constraint (2017) (12)
- Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition (2016) (12)
- GHz modulation bandwidth from single-longitudinal mode violet-blue VCSEL using nonpolar InGaN/GaN QWs (2016) (12)
- Demonstration of Distributed Bragg Reflectors for Deep Ultraviolet Applications (2007) (12)
- In situ studies of the effect of silicon on GaN growth modes (2000) (11)
- Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures (2012) (11)
- Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN (2013) (11)
- Dislocation reduction in GaN films through selective island growth of InGaN (2000) (11)
- Morphological evolution of InGaN/GaN light-emitting diodes grown on free-standing m-plane GaN substrates (2013) (11)
- Effect of nitrogen plasma power on defect levels in Ni/n-GaN Schottky diodes grown by molecular beam epitaxy (2010) (11)
- Cathodoluminescence study of deep ultraviolet quantum wells grown on maskless laterally epitaxial overgrown AlGaN (2004) (11)
- All-solid-state VUV frequency comb at 160 nm using high-harmonic generation in nonlinear femtosecond enhancement cavity. (2018) (11)
- Hall and Seebeck measurements estimate the thickness of a (buried) carrier system: Identifying interface electrons in In-doped SnO2 films (2015) (11)
- Electrically driven, polarized, phosphor-free white semipolar (20-21) InGaN light-emitting diodes grown on semipolar bulk GaN substrate. (2020) (11)
- InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays (2015) (11)
- Erratum: Many-electron effects on the dielectric function of cubic In2O3 : Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift [Phys. Rev. B 93 , 045203 (2016)] (2016) (11)
- Using tunnel junctions to grow monolithically integrated optically pumped semipolar III-nitride yellow quantum wells on top of electrically injected blue quantum wells. (2017) (11)
- Atom probe tomography studies of Al2O3 gate dielectrics on GaN (2014) (11)
- Erratum: “Impact of strain on free-exciton resonance energies in wurtzite AlN” [J. Appl. Phys. 102, 123707 (2007)] (2008) (11)
- Electrical and electrothermal transport in InN: The roles of defects (2009) (11)
- Polarization-Resolved Near-Field Spectroscopy of Localized States in m-Plane InxGa1−xN/GaN Quantum Wells (2017) (11)
- N-Polar GaN/AlN MIS-HEMT for Ka-Band Power Applications (2010) (10)
- Growth of AlN by the Chemical Vapor Reaction Process (2005) (10)
- 2.6 GHz high-speed visible light communication of 450 nm GaN laser diode by direct modulation (2015) (10)
- Capacitance-voltage profiling on polar III-nitride heterostructures (2012) (10)
- Compact ferroelectric reflection phase shifters at X-band (2003) (10)
- Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020) (10)
- Developments in AlGaN and UV-C LEDs grown on SiC (2018) (10)
- Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems (2018) (10)
- Effect of MBE Growth Conditions on Multiple Electron Transport in InN (2008) (10)
- Semipolar GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations (2018) (10)
- Compact Distributed Phase Shifters at X-Band Using BST (2003) (10)
- Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy (2001) (10)
- Distributed phase shifters using (Ba,Sr)TiO3 thin films on sapphire and glass substrates (2001) (10)
- High-temperature corrosion of Inconel®Alloy 718, Haynes®282®Alloy and CoWAlloy1&2 in supercritical ammonia/ammonium chloride solution (2018) (10)
- Dislocation Reduction in AlGaN/GaN Heterostructures on 4H-SiC by Molecular Beam Epitaxy in the Thermal Decomposition Regime (2008) (10)
- Growth of N-polar GaN by ammonia molecular beam epitaxy (2018) (10)
- Optical properties of GaN nanopillar and nanostripe arrays with embedded InGaN/GaN multi quantum wells (2007) (10)
- Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates (2021) (10)
- Impact of roughening density on the light extraction efficiency of thin-film flip-chip ultraviolet LEDs grown on SiC. (2019) (10)
- Transition between the 1×1 and surface structures of GaN in the vapor-phase environment (2000) (10)
- Measurement of gain current relations for InGaN multiple quantum wells (1998) (10)
- Strain compensated superlattices on m-plane gallium nitride by ammonia molecular beam epitaxy (2017) (10)
- Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes (1999) (10)
- Toward a physical understanding of the reliability-limiting EC-0.57 eV trap in GaN HEMTs (2014) (10)
- Growth of A1N by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates (2004) (10)
- Mg doping and diffusion in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy (2021) (10)
- Effect of the nucleation layer on stress during cantilever epitaxy of GaN on Si (111) (2002) (10)
- Electrical properties and interface abruptness of AlSiO gate dielectric grown on 000 1 ¯ N-polar and (0001) Ga-polar GaN (2019) (10)
- Observation of Mg-rich precipitates in the p-type doping of GaN-based laser diodes (2001) (10)
- Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes (2018) (10)
- Influence of well width fluctuations on recombination properties in semipolar InGaN quantum wells studied by time- and spatially-resolved near-field photoluminescence (2017) (10)
- Analysis of Vegard's law for lattice matching In x Al 1-x N to GaN by metalorganic chemical vapor deposition (2017) (10)
- Transparent conducting oxide clad limited area epitaxy semipolar III-nitride laser diodes (2016) (9)
- Estimation of Hot Electron Relaxation Time in GaN Using Hot Electron Transistors (2013) (9)
- Optical Properties of GaN/AlN(0001) Quantum Dots Grown by Plasma-Assisted Molecular Beam Epitaxy (2006) (9)
- Direct measurement of hot-carrier generation in a semiconductor barrier heterostructure: Identification of the dominant mechanism for thermal droop (2019) (9)
- p-GaN/AlGaN/GaN Enhancement-Mode HEMTs (2006) (9)
- High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy (2016) (9)
- Erratum: “Structural and electronic properties of Ga2O3-Al2O3 alloys” [Appl. Phys. Lett. 112, 242101 (2018)] (2019) (9)
- Erratum: “Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching” [Appl. Phys. Lett. 105, 031111 (2014)] (2014) (9)
- Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors (2009) (9)
- Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes (2010) (9)
- Extended defect structure of a-plane GaN produced by sidewall lateral epitaxial overgrowth (2011) (9)
- Vertical transport through AlGaN barriers in heterostructures grown by ammonia molecular beam epitaxy and metalorganic chemical vapor deposition (2017) (9)
- AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy (2012) (9)
- Smooth and selective photo-electrochemical etching of heavily doped GaN:Si using a mode-locked 355 nm microchip laser (2016) (9)
- Recent progress in nonpolar LEDs as polarized light emitters (2009) (9)
- Spatial correlation of the EC-0.57 eV trap state with edge dislocations in epitaxial n-type gallium nitride (2018) (9)
- Theoretical and experimental investigations of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder (2020) (9)
- Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films (2017) (9)
- Photoluminescence of a ‐plane GaN: comparison between MOCVD and HVPE grown layers (2006) (9)
- Barriers to carrier transport in multiple quantum well nitride-based c -plane green light emitting diodes (2020) (9)
- A New X Band 180' High Performance Phase Shifter using (Ba,Sr)Ti03 Thin Films (2002) (9)
- Continuous-wave operation of a InGaN laser diode with a photoelectrochemically etched current aperture (2015) (9)
- X-band power performance of N-face GaN MIS-HEMTs (2011) (9)
- Electron Microscopic Study of Domains in Relaxor Ferroelectrics (1991) (9)
- Efficient tunnel junction contacts for high-power semipolar III-nitride edge-emitting laser diodes. (2019) (9)
- Charge and Mobility Enhancements in In-Polar InAl(Ga)N/Al(Ga)N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy (2012) (9)
- Thermal management strategies for gallium oxide vertical trench-fin MOSFETs (2021) (9)
- Identification of Auger effect as the dominant mechanism for efficiency droop of LEDs (2014) (9)
- Dissipation-factor-based criterion for the validity of carrier-type identification by capacitance-voltage measurements (2009) (9)
- Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy (2000) (9)
- Demonstration of isotype GaN/AlN/GaN heterobarrier diodes by NH3-molecular beam epitaxy (2015) (8)
- 560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates. (2020) (8)
- Stress relaxation in semipolar and nonpolar III-nitride heterostructures by formation of misfit dislocations of various origin (2019) (8)
- Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes (2018) (8)
- Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs (2017) (8)
- Phonon modes in self-assembled GaN quantum dots (2008) (8)
- MBE-grown AlGaN/GaN HEMTs on SiC (2004) (8)
- Room-Temperature Continuous-Wave Electrically Driven Semipolar (202̅1) Blue Laser Diodes Heteroepitaxially Grown on a Sapphire Substrate (2020) (8)
- 444 nm InGaN light emitting diodes on low-defect-density GaN templates on patterned sapphire (2017) (8)
- Analysis of interface electronic structure in InxGa1−xN/GaN heterostructures (2004) (8)
- Propagation of Spontaneous Emission in Birefringent m-Axis Oriented Semipolar (1122) (Al,In,Ga)N Waveguide Structures (2010) (8)
- Germicidal ultraviolet LEDs: a review of applications and semiconductor technologies (2021) (8)
- Red InGaN micro-light-emitting diodes (>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact (2022) (8)
- Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy (2007) (8)
- Microscopic emission properties of nonpolar α-plane GaN grown by HVPE (2006) (8)
- Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure (2015) (8)
- Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia (2004) (8)
- Quadrupole mass spectrometry desorption analysis of Ga adsorbate on AlN (0001) (2006) (8)
- Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers (2007) (8)
- Anisotropic optical properties of highly doped rutile SnO2: Valence band contributions to the Burstein-Moss shift (2019) (8)
- In‐vacancies in Si‐doped InN (2010) (8)
- Tunable strontium titanate thin films for microwave devices (2001) (7)
- Intrinsic electronic properties of high-quality wurtzite InN (2016) (7)
- Coupling resistance between n-type surface accumulation layer and p-type bulk in InN:Mg thin films (2012) (7)
- Influence of the Structure Parameters on the Relaxation of Semipolar InGaN/GaN Multi Quantum Wells (2013) (7)
- A 3D simulation comparison of carrier transport in green and blue c-plane multi-quantum well nitride light emitting diodes (2020) (7)
- Suppression of relaxation in (202¯1) InGaN/GaN laser diodes using limited area epitaxy (2012) (7)
- Blue InGaN/GaN laser diodes grown on (33$ \bar 3 \bar 1 $) free‐standing GaN substrates (2011) (7)
- Improved synthesis of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy (2003) (7)
- Additive phase noise measurements of AlGaN/GaN HEMTs using a large signal network analyzer and a tunable monochromatic light source (2009) (7)
- Photoreflectance Studies of AlGaN/GaN Heterostructures Containing a Polarisation Induced 2DEG (2002) (7)
- Comparison of Polished and Dry Etched Semipolar $(11\bar{2}2)$ III-Nitride Laser Facets (2013) (7)
- Transport properties of two-dimensional electron gases induced by spontaneous and piezoelectric polarisation in AlGaN/GaN heterostructures (2001) (7)
- First Demonstration of a Periodically Loaded Line Phase Shifter Using BST Capacitors (1999) (7)
- Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy (2013) (7)
- Properties of near-field photoluminescence in green emitting single and multiple semipolar (202̄1) plane InGaN/GaN quantum wells (2016) (7)
- Polarity control and transport properties of Mg-doped (0001) InN by plasma-assisted molecular beam epitaxy (2013) (7)
- Crystallographic wing tilt in laterally overgrown GaN (2003) (7)
- Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy (2020) (7)
- III-nitride blue light-emitting diodes utilizing hybrid tunnel junction with low excess voltage (2020) (7)
- Fermi edge singularity observed in GaN/AlGaN heterointerfaces (2009) (7)
- Oxide Epitaxial Lift-Off (OELO) (1997) (7)
- Demonstration of high wall-plug efficiency III-nitride micro-light-emitting diodes with MOCVD-grown tunnel junction contacts using chemical treatments (2021) (7)
- Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors. (2020) (7)
- Defects in GaN based transistors (2014) (7)
- In situ characterization of GaN quantum dot growth with reflection high-energy electron diffraction and line-of-sight mass spectrometry (2006) (7)
- Impact of Surface Treatment on Interface States of ALD Al2O3/GaN Interfaces (2017) (7)
- Semipolar (202̅1̅) InGaN/GaN micro-photodetector for gigabit-per-second visible light communication (2019) (7)
- Atomic-scale nanofacet structure in semipolar and InGaN single quantum wells (2014) (7)
- Vacancy defects probed with positron annihilation spectroscopy in In‐polar InN grown by plasma‐assisted molecular beam epitaxy: Effects of growth conditions (2009) (6)
- Study of deleterious aging effects in GaN/AlGaN heterostructures (2003) (6)
- Comparative study of the pressure dependence of optical-phonon transverse-effective charges and linewidths in wurtzite InN (2018) (6)
- Thermal Management of β-Ga₂O₃ Current Aperture Vertical Electron Transistors (2021) (6)
- Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy (2001) (6)
- Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy (2008) (6)
- Effect of heavy Ga doping on defect structure of SnO2 layers (2014) (6)
- Phase partitioning and epitaxy of Zr(Al)O2 thin films on cubic zirconia substrates (1995) (6)
- Influences of indium fluctuation to the carrier transport, auger recombination, and efficiency droop (2013) (6)
- Characterization of InGaN quantum dots grown by metalorganic chemical vapor deposition (2019) (6)
- Growth of high-quality N-polar GaN on bulk GaN by plasma-assisted molecular beam epitaxy (2020) (6)
- Submicron-thick microcavity InGaN light emitting diodes (2008) (6)
- Optical properties and carrier dynamics in m ‐plane InGaN quantum wells (2014) (6)
- Characterization of a dielectric/GaN system using atom probe tomography (2013) (6)
- Growth and characterization of N‐polar GaN and AlGaN/GaN HEMTs on (111) silicon (2011) (6)
- Electrical Transport of an AlGaN/GaN Two-Dimensional Electron Gas (1999) (6)
- Surface Treatment for Leakage Reduction in AlGaN/GaN HEMTs (2007) (6)
- Growth of highly conductive Al-rich AlGaN:Si with low group-III vacancy concentration (2021) (6)
- Metalorganic chemical vapor deposition-grown tunnel junctions for low forward voltage InGaN light-emitting diodes: epitaxy optimization and light extraction simulation (2021) (6)
- Highly conductive epitaxial β-Ga2O3 and β-(Al x Ga1−x )2O3 films by MOCVD (2022) (6)
- Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy (2016) (6)
- Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment (2008) (6)
- Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions (2015) (6)
- Electronic properties of GaN induced by a subsurface stressor (2002) (6)
- On the optical polarization properties of semipolar ( 20 2 ¯ 1 ) and ( 20 2 ¯ 1 ¯ ) InGaN/GaN quantum wells (2018) (6)
- Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN “double miscut” substrates (2015) (6)
- Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN (2006) (6)
- Structural and optical properties of nonpolar m- and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions (2020) (6)
- High-temperature electroluminescence properties of InGaN red 40 × 40 μm2 micro-light-emitting diodes with a peak external quantum efficiency of 3.2% (2021) (6)
- Demonstration of high efficiency cascaded blue and green micro-light-emitting diodes with independent junction control (2021) (6)
- Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures (2001) (6)
- Growth kinetics of basic ammonothermal gallium nitride crystals (2018) (6)
- Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN/GaN Laser Diodes (2010) (5)
- N-polar GaN HEMTs with fmax > 300 GHz using high-aspect-ratio T-gate design (2011) (5)
- AlGaN/GaN HEMTs with Large Angle Implanted Nonalloyed Ohmic Contacts (2007) (5)
- Enhancement-mode m -plane AlGaN/GaN HFETs with regrown n+-GaN contact layer (2012) (5)
- Comparison of deep level spectra in p‐type and n‐type GaN grown by molecular beam epitaxy (2007) (5)
- Scaling behavior and velocity enhancement in self-aligned N-polar GaN/AlGaN HEMTs with maximum fT of 163 GHz (2011) (5)
- m-plane ( 101¯0) and ( 202¯1) GaN/AlxGa1–xN conduction band offsets measured by capacitance-voltage profiling (2014) (5)
- Effect of Sb composition on lateral oxidation rates in AlAs1−xSbx (2000) (5)
- AlGaN-Cladding-Free m-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers (2011) (5)
- Improved performance of long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1−xN buffer layers (2014) (5)
- Multiple carrier transport in N‐face indium nitride (2008) (5)
- Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers (2021) (5)
- Radiative and Nonradiative Exciton Lifetimes in GaN Grown by Molecular Beam Epitaxy (2001) (5)
- Compact Phase Shifter Design Using Barium Strontium Titanate Thin-Film Varactors (2003) (5)
- Investigation of oxygen and other impurities and their effect on the transparency of a Na flux grown GaN crystal (2019) (5)
- Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy (2007) (5)
- A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si (2005) (5)
- Modeling dislocation-related leakage currents in GaN p-n diodes (2019) (5)
- Realization of thin-film m-plane InGaN laser diode fabricated by epitaxial lateral overgrowth and mechanical separation from a reusable growth substrate. (2019) (5)
- Epitaxial growth of β-Ga2O3 on (110) substrate by plasma-assisted molecular beam epitaxy (2020) (5)
- Improved quality nonpolar a ‐plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO) (2008) (5)
- Progress Toward Viable Epitaxial Oxide Ferroelectric Waveguide Heterostructures on Gaas (1993) (5)
- Evaluation of GaN substrates grown in supercritical basic ammonia (2009) (5)
- Thin-Film Phase Shifters for Low-Cost Phased Arrays (2000) (5)
- Demonstration of ultra-small 5 × 5 μm2 607 nm InGaN amber micro-light-emitting diodes with an external quantum efficiency over 2% (2022) (5)
- Three-Dimensional Modeling of Minority-Carrier Lateral Diffusion Length Including Random Alloy Fluctuations in ( In , Ga ) N and ( Al , Ga ) N Single Quantum Wells (2021) (5)
- Crack formation in surface layers with strain gradients (2007) (5)
- Defect reduction in (11(2)over-bar0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy (2003) (5)
- High speed performance of III-nitride laser diode grown on (2021) semipolar plane for visible light communication (2016) (5)
- Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition (2017) (5)
- Chapter 4 – GaN Laser Diodes on Nonpolar and Semipolar Planes (2012) (5)
- Anomalous output conductance in N-polar GaN-based MIS-HEMTs (2011) (5)
- Superlattice hole injection layers for UV LEDs grown on SiC (2020) (5)
- Growth and Characterization of N-Polar GaN Films on Si(111) by Plasma Assisted Molecular Beam Epitaxy (2012) (5)
- Erratum: “AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy” [J. Appl. Phys. 90, 5196 (2001)] (2002) (4)
- Dependence of Electron Overflow on Emission Wavelength and Crystallographic Orientation in Single-Quantum-Well III–Nitride Light-Emitting Diodes (2013) (4)
- GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode (2016) (4)
- Development of efficient semipolar InGaN long wavelength light-emitting diodes and blue laser diodes grown on a high quality semipolar GaN/sapphire template (2020) (4)
- Peculiarities of Domain Patterns in Epitaxially Grown Ferroelectric Thin Films (2002) (4)
- High internal quantum efficiency of long wavelength InGaN quantum wells (2021) (4)
- T-gate technology for N-polar GaN-based self-aligned MIS-HEMTs with state-of-the-art fMAX of 127 GHz: Pathway towards scaling to 30nm GaN HEMTs (2010) (4)
- High-performance blue and green laser diodes based on nonpolar/semipolar GaN substrates (2011) (4)
- Band gap bowing for high In content InAlN films (2019) (4)
- Investigations of Chemical Vapor Deposition of GaN Using Synchrotron Radiation (2000) (4)
- MOCVD growth of AlGaN films for solar blind photodetectors (2004) (4)
- The efficiency challenge of nitride light-emitting diodes for lighting (Phys. Status Solidi A 5∕2015) (2015) (4)
- Thermal Performance of Violet and Blue Single-Quantum-Well Nonpolar m-Plane InGaN Light-Emitting Diodes (2013) (4)
- An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures (2018) (4)
- Recent Performance of Nonpolar and Semipolar GaN-Based Light Emitting Diodes and Laser Diodes (2007) (4)
- Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy (2020) (4)
- Quantitative correlation of hot electron emission to Auger recombination in the active region of c-plane blue III-N LEDs (2021) (4)
- Zinc oxide clad limited area epitaxy semipolar III-nitride laser diodes. (2018) (4)
- Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition (2020) (4)
- Low ON-resistance and high current GaN Vertical Electron Transistors with buried p-GaN layers (2014) (4)
- Observation of Long Transients in the Electrical Characterization of Thin Film BST Capacitors (2003) (4)
- Optical polarization anisotropy in strained A‐plane GaN films on R‐plane sapphire (2006) (4)
- Auger effect identified as main cause of efficiency droop in LEDs (2014) (4)
- Characterization of traps in AlGaN/GaN HEMTs with a combined large signal network analyzer/deep level optical spectrometer system (2009) (4)
- Atomic structure of prismatic stacking faults in nonpolar a-plane GaN epitaxial layers (2012) (4)
- Optical Dielectric Response of Gallium Nitride Studied by Variable Angle Spectroscopic Ellipsometry (1996) (4)
- Strain relaxation of InGaAs by lateral oxidation of AlAs (2000) (4)
- Modeling dislocation-related reverse bias leakage in GaN p–n diodes (2021) (4)
- Improvement in low energy ion‐induced damage with a low temperature GaAs capping layer (1996) (4)
- Antimony segregation in the oxidation of AlAsSb interlayers (2003) (3)
- Aluminum nitride grown on lens shaped patterned sapphire by hydride vapor phase epitaxy (2011) (3)
- Substrate Surface Treatments and “Controlled Contamination” in GaN / Sapphire MOCVD (1997) (3)
- Plasma-Assisted Molecular Beam Epitaxy 1 (2020) (3)
- Characterization of crystallographic properties and defects via X‐ray microdiffraction in GaN (0001) layers (2006) (3)
- Blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy (2003) (3)
- Effect of indium on the conductivity of poly‐crystalline GaN grown on high purity fused silica (2012) (3)
- InGaN/GaN laser diodes on semipolar (10) bulk GaN substrates (2008) (3)
- Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model (2014) (3)
- Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer (2022) (3)
- Erratum: ``(Ga,Mn)As as a digital ferromagnetic heterostructure'' [Appl. Phys. Lett. 77, 2379 (2000)] (2000) (3)
- Evaluation of intervalley energy of GaN conduction band by ultrafast pump-probe spectroscopy (Conference Presentation) (2017) (3)
- Antiphase boundaries and rotation domains in In2O3(001) films grown on yttria-stabilized zirconia (001) (2014) (3)
- Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel junction contacts grown by metalorganic chemical vapor deposition (2021) (3)
- Nitride semiconductors as terahertz sources based on spontaneous and piezoelectric polarization (2010) (3)
- Growth of In-doped ZnO films by metalorganic chemical vapor deposition on GaN(0001) templates (2009) (3)
- Progress in gallium nitride-based bipolar transistors (2001) (3)
- An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface (2020) (3)
- Electron-phonon scattering in β-Ga2O3 studied by ultrafast transmission spectroscopy (2021) (3)
- Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport (2020) (3)
- Homoepitaxial growth and characterization of ZnO(0001) thin films grown by metalorganic chemical vapor epitaxy (2009) (3)
- Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shaped Defects and Random Alloy Fluctuation in Quantum Wells (2021) (3)
- Trap-related delay analysis of self-aligned N-polar GaN/InAlN HEMTs with record extrinsic gm of 1105 mS/mm (2011) (3)
- Optical and electrical characterizations of micro-LEDs grown on lower defect density epitaxial layers (2021) (3)
- Polarization field crossover in semi‐polar InGaN/GaN single quantum wells (2010) (3)
- 47.1: Invited Paper: Progress in Green and Blue Laser Diodes and Their Application in Pico Projection Systems (2011) (3)
- Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition (2016) (3)
- β-Ga2O3 lateral transistors with high aspect ratio fin-shape channels (2020) (3)
- Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors (2009) (3)
- Erratum: “Asymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructures” [Appl. Phys. Lett. 101, 091601 (2012)] (2012) (3)
- Effect of indium on the physical vapor transport growth of AlN (2009) (3)
- Tunnel junctions in GaN/AlN for optoelectronic applications (2005) (3)
- Hybrid III-Nitride Tunnel Junctions for Low Excess Voltage Blue LEDs and UVC LEDs (2019) (3)
- Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions (2014) (3)
- Low-energy electro- and photo-emission spectroscopy of GaN materials and devices (2015) (3)
- Highly Conductive n-Al0.65Ga0.35N Grown by MOCVD Using Low V/III Ratio (2021) (3)
- Recent progress in InGaN-based laser diodes fabricated on nonpolar/semipolar substrates (2011) (3)
- Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy (2016) (3)
- Detection of carbon-related bandgap states in GaN using deep level optical spectroscopy (2003) (3)
- Oxide based compound semiconductor electronics (1997) (3)
- Semipolar III-nitride laser diodes for solid-state lighting (2019) (3)
- Study of surface roughness of lifted-off epitaxial lateral overgrown GaN layers for the n-DBR mirror of a III-nitride vertical-cavity surface emitting laser (2021) (3)
- MBE of transparent semiconducting oxides (2013) (3)
- Progress of InGaN-Based Red Micro-Light Emitting Diodes (2022) (3)
- Quantification of Ga surface coverages and their desorption kinetics on GaN (0001) and (000-1) surfaces (2005) (3)
- Observation of near field modal emission in InGaN multi-quantum well laser diodes by near field scanning optical microscopy (1998) (3)
- High gain semiconductor optical amplifier — Laser diode at visible wavelength (2016) (3)
- High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum (2017) (3)
- Enhanced external quantum efficiency of III-nitride micro-light-emitting diodes using vertical and transparent package (2021) (3)
- Scalable E-mode N-polar GaN MISFET devices and process with self-aligned source/drain regrowth (2010) (3)
- High-quality GaN on intentionally roughened c-sapphire (2003) (3)
- Intensity‐dependent photoluminescence studies of the electric field in N‐face and In‐face InN/InGaN multiple quantum wells (2008) (3)
- Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN (2019) (3)
- Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination (2020) (3)
- High speed devices (2009) (2)
- M ‐plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c ‐plane patterned templates (2008) (2)
- Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization‐doped 3D electron slabs in graded‐AlGaN (2003) (2)
- Bonding of nitride based LEDs on tin oxide templates for advanced optoelectronic devices (2011) (2)
- Fracture Toughness of Chemically Vapor‐Deposited Diamond. (1992) (2)
- Impact of growth pressure on defects in GaN grown by metalorganic chemical vapor deposition (2003) (2)
- HBT on LEO GaN (2000) (2)
- Electrical characterization of low defect density nonpolar (11 ¯ 2 0) a -plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO) (2008) (2)
- Molecular Beam Epitaxy of Nitrides for Advanced Electronic Materials (2015) (2)
- BBr3 as a boron source in plasma-assisted molecular beam epitaxy (2019) (2)
- Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN (2011) (2)
- N-polar GaN-based MIS-HEMTs for mixed signal applications (2010) (2)
- Ion implantation for unalloyed ohmic contacts to AlGaN/GaN HEMTs (2004) (2)
- Nanometer scale structural and compositional inhomogeneities of half-Heusler CoTi1-xFexSb thin films (2019) (2)
- Dislocation-Free GaN Nanowires (2003) (2)
- Wide bandgap oxides (2019) (2)
- Terahertz Emission from Indium Nitride Multiple Quantum Wells (2007) (2)
- Vertical transport in isotype InAlN/GaN dipole induced diodes grown by molecular beam epitaxy (2017) (2)
- Energy Release Due to Domain Formation in the Strained Epitaxy of Multivariant Films (1993) (2)
- Excitation Wavelength Dependence Of Terahertz Emission From Indium Nitride Thin Films (2007) (2)
- Gallium nitride based light emitting diodes (LEDs) for energy efficient lighting and displays (2013) (2)
- Optoelectronic properties of doped hydrothermal ZnO thin films (2017) (2)
- Cleaved Facets in Gan by Wafer Fusion of Gan to Inp (1996) (2)
- Structural and electrical properties of low-temperature-grown Al(As,Sb) (1997) (2)
- Characterization of traps in InAlN by optically and thermally stimulated deep level defect spectroscopies (2018) (2)
- Development of beta-(AlxGa1-x)2O3/Ga2O3 Heterostructures (2019) (2)
- Nonpolar and semipolar LEDs (2014) (2)
- Spontaneous formation of {1 1̄ 0 1} InGaN quantum wells on a (1 1 2̄ 2) GaN template and their electroluminescence characteristics (2009) (2)
- Impact of growth parameters on the background doping of GaN films grown by ammonia and plasma-assisted molecular beam epitaxy for high-voltage vertical power switches (2021) (2)
- High efficiency of III-nitride and AlGaInP micro-light-emitting diodes using atomic layer deposition (2021) (2)
- Effect of n‐AlGaN cleave assistance layers on the morphology of c ‐plane cleaved facets for m ‐plane InGaN/GaN laser diodes (2011) (2)
- Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited c -Plane and m -Plane ( In , Ga ) N Quantum Wells (2020) (2)
- GaN quantum dots: nanophotonics and nanophononics (2006) (2)
- Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells (2020) (2)
- Growth of InAs on diamond (001) by molecular beam epitaxy (1992) (2)
- Relation between Structural Parameters and the Effective Electron–Hole Separation in InGaN/GaN Quantum Wells (2001) (2)
- Highly efficient InGaN-based LED with pre-roughening backside of GaN substrate (2020) (2)
- Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting (2012) (2)
- Integrated photonic platform based on semipolar InGaN/GaN multiple section laser diodes (2017) (2)
- Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding (2005) (2)
- Nonpolar gallium nitride laser diodes are the next new blue (2007) (2)
- Demonstration of electrically pumped nitride distributed feedback lasers employing dielectric gratings (1999) (2)
- New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substrate (2021) (2)
- Distinguishing negatively-charged and highly conductive dislocations in gallium nitride using scanning Kelvin probe and conductive atomic force microscopy (2002) (2)
- Erratum: “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate” [Appl. Phys. Lett.98, 191903 (2011)] (2011) (2)
- Improved quality (11(2)over-bar0) a-plane GaN with sidewall lateral epitaxial overgrowth (2006) (2)
- InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs (2013) (2)
- Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films (2007) (1)
- Plasma‐assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016) (2016) (1)
- Erratum: “Morphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphire” [Appl. Phys. Lett. 73, 3090 (1998)] (1999) (1)
- Carbon-related Deep States in Compensated n-type and Semi-Insulating GaN:C and their Influence on Yellow Luminescence (2004) (1)
- Reactive removal of misfit dislocations from InGaAs on GaAs by lateral oxidation (2000) (1)
- <formula formulatype="inline"><tex Notation="TeX">$f_{T}$</tex></formula> and <formula formulatype="inline"><tex Notation="TeX">$f_{\rm MAX}$</tex></formula> of 47 and 81 <emphasis emphasistype="roman">GHz </emphasis>, Respectively, on N-Polar GaN/AlN MIS-HEMT (2009) (1)
- Ammonia Molecular Beam Epitaxy of III-Nitrides (2019) (1)
- Progress in nonpolar and semipolar GaN materials and devices (2011) (1)
- Study of percolation transport in the InGaN/AlGaN LEDs with random alloy fluctuation (2015) (1)
- Energy Savings Potential of GaN LEDs for Energy Efficient Lighting and Future Research Directions (2013) (1)
- Puzzle of non-surface related 2D electron gas in n-InN epitaxial samples (2019) (1)
- Effects of strain relaxation on the photoluminescence of semipolar InGaN (2012) (1)
- Publisher’s Note: “High optical polarization ratio from semipolar ((202¯1¯)) blue-green InGaN/GaN light-emitting diodes” [Appl. Phys. Lett. 99, 051109 (2011)] (2011) (1)
- AlGaN-GaN HEMTs and HBTs for microwave power (2000) (1)
- Publisher's Note: “Curvature and bow of bulk GaN substrates” [J. Appl. Phys. 120, 035104 (2016)] (2016) (1)
- Improved Vertical Carrier Transport for Green III-Nitride LEDs Using <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mo stretchy="false">(</mml:mo><mml:mi>In</mml:mi><mml:mo>,</mml:mo><mml:mi>Ga</mml:mi><mml:mo stretchy="false">)</mml:mo><mml:mrow><m (2022) (1)
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- Invited) Heteroepitaxial Lattice Mismatch Stress Relaxation in Nonpolar and Semipolar GaN by Dislocation Glide (2013) (1)
- High speed devices (2010) (1)
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- Progress in Nonpolar and Semipolar GaN-base Materials and Devices (2011) (1)
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- Interface roughness scattering in ultra-thin GaN channels in N-polar enhancement-mode GaN MISFETs (2011) (1)
- Defect Generation And Evolution In The Hydrothermal Growth Of Epitaxial BaTiO 3 Thin Films (1997) (1)
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- Demonstration of Low ON-Resistance CAVETS with Ammonia MBE Grown Active p-GaN Layer as the Current Blocking Layer for High Power Applications (2012) (1)
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- Molecular beam epitaxy of InGaN/GaN heterostructures for green luminescence (2000) (1)
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- Erratum: “High-quality InAsyP1−y step-graded buffer by molecular-beam epitaxy” [Appl. Phys. Lett. 82, 3212 (2003)] (2003) (1)
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- Impact of alloy composition and well width fluctuations on linewidth broadening and carrier lifetimes in semipolar InGaN quantum wells (Conference Presentation) (2018) (0)
- GaN High-Power Lasers for solid-state lighting (2019) (0)
- crystal growth of cuprates from hydroxide fluxes Thin for superconducting electronics. Precursor mechanisms, and superconducting phase strategies in the growth of TI Ba films by metal-organic chemical vapor deposition for an atmospheric oxyacetylene in using (2013) (0)
- Sn doping of [beta]-Ga2O3 grown by plasma-assisted molecular beam epitaxy (2021) (0)
- Light extraction from LEDs: a long battle (Conference Presentation) (2020) (0)
- INVESTIGATION OF NATIVE POINT DEFECTS IN Si-DOPED InN (2007) (0)
- Characterisation of Electron Transport in MBE Grown Indium Nitride (2006) (0)
- Epitaxial Growth, Doping, and Electron Transport of the Semiconducting Oxides In 2 O 3 , Ga 2 O 3 , and SnO 2 (2014) (0)
- Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy (2022) (0)
- Thermal Transport Across Al-(AlxGa1-x)2O3 and Al-Ga2O3 Interfaces (2021) (0)
- Low Noise Amplifiers Based on Lattice Engineered Substrates (2004) (0)
- Acousto-fluidic assembly of III-nitride micro-light-emitting diodes with magnetic alignment (2021) (0)
- Pulsed operation of (Al,Ga,In)N blue laser diodes (1998) (0)
- Observation of clamping of photoluminescence intensities from nonlinear degenerate electron gas in InN (2009) (0)
- Optoelectronic devices (2011) (0)
- Ballistic Electron Emission Microscopy Study of Individual Threading Dislocations in GaN (2001) (0)
- Vertical β-Ga2O3 Schottky diodes from metal-organic chemical vapor deposition with low on-resistance and high average breakdown field (2021) (0)
- Thermal stability, surface kinetics, and MBE growth diagrams for N- and In-face InN (2009) (0)
- Proceedings Symposium H, "GaN & Related Compounds". E-MRS Spring Meeting. (2002) (0)
- Defect Tolerance of Intersubband Transitions in Nonpolar GaN/(Al,Ga)N Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics (2021) (0)
- Elemental Quantification and Visualization of GaN Structures using APT and SIMS (2014) (0)
- Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation (2006) (0)
- Symposium L: GaN and Related Alloys (2003) (0)
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What Schools Are Affiliated With James S. Santa Barbara Speck?
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