James W. Corbett

Q: What Schools Are Affiliated With James W. Corbett

James W. Corbett is affiliated with the following schools: University of California, Berkeley, Yale University, University at Albany, SUNY, University of Missouri

James W. Corbett's AcademicInfluence.com Rankings

James W. Corbett

Physics

#3730

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#5237

Historical Rank

#1324

USA Rank

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Physics

James W. Corbett's Degrees

PhD Physics University of California, Berkeley
Masters Physics University of California, Berkeley
Bachelors Physics University of California, Berkeley

Why Is James W. Corbett Influential?

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According to Wikipedia, James William Corbett was a solid-state physicist. He received his bachelor's degree from the University of Missouri and his Ph.D. from Yale University in 1955. Beginning in 1955 he was a research associate at the General Electric Research Laboratory in Schenectady, New York. During the 1960s as an adjunct professor at Rensselaer Polytechnic Institute, he was a co-founder and director of Rensselaer's Joint Laboratories for Advanced Materials. His 1966 book Electron Radiation Damage in Semiconductors and Metals was highly esteemed. In 1968 he joined the faculty of the University at Albany, SUNY. For the academic year 1975–1976 he was a Guggenheim Fellow. He was an associate editor of the Elsevier journal Materials Letters.

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James W. Corbett's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Radiation effects in semiconductors (1971) (800)
Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-A Center (1961) (525)
DEFECTS IN IRRADIATED SILICON: ELECTRON PARAMAGNETIC RESONANCE OF THE DIVACANCY (1965) (510)
Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-E Center (1964) (507)
Hydrogen in crystalline semiconductors (1987) (496)
Hydrogen interactions with defects in crystalline solids (1992) (418)
Electron Radiation Damage in Semiconductors and Metals. (1966) (261)
Defect energy levels in boron-doped silicon irradiated with 1-MeV electrons (1977) (255)
1.8-, 3.3-, and 3.9-mu Bands in Irradiated Silicon: Correlations with the Divacancy (1966) (245)
DEFECTS IN IRRADIATED SILICON. II. INFRARED ABSORPTION OF THE Si-A CENTER (1961) (244)
PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON (1965) (197)
EPR studies of defects in electron-irradiated silicon: A triplet state of vacancy-oxygen complexes (1976) (195)
NEW OXYGEN INFRARED BANDS IN ANNEALED IRRADIATED SILICON (1964) (183)
The configuration and diffusion of isolated oxygen in silicon and germanium (1964) (183)
A new mechanism for interstistitial migration (1972) (179)
Enhanced diffusion mechanisms (1978) (172)
Ion-induced defects in semiconductors (1981) (160)
Recovery of Electron-Irradiated Copper. I. Close Pair Recovery (1959) (155)
SPIN RESONANCE IN ELECTRON IRRADIATED SILICON (1959) (153)
RECOVERY OF ELECTRON-IRRADIATED COPPER. II. INTERSTITIAL MIGRATION (1959) (145)
EPR studies in neutron-irradiated silicon: a negative charge state of a nonplanar five-vacancy cluster (V$sub 5$$sup -$) (1973) (139)
Oxygen in Silicon (1991) (136)
EPR study of neutron-irradiated silicon: A positive charge state of the 〈 100 〉 split di-interstitial (1976) (122)
Atomic and Molecular Hydrogen in the Si Lattice (1983) (111)
SILICON DIVACANCY AND ITS DIRECT PRODUCTION BY ELECTRON IRRADIATION (1961) (97)
EPR study of defects in neutron-irradiated silicon: Quenched-in alignment under 〈 110 〉 -uniaxial stress (1974) (97)
Vibrational and Electronic Structure of Hydrogen-Related Defects in Silicon Calculated by the Extended Hückel Theory (1977) (94)
EPR of a thermally induced defect in silicon (1977) (88)
Theoretical studies on the core structure of the 450 °C oxygen thermal donors in silicon (1992) (75)
Models for the Hydrogen-Related Defect—Impurity Complexes and SiH Infrared Bands in Crystalline Silicon (1982) (74)
ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN IRRADIATED SILICON (1961) (73)
Properties of the Interstitial in the Diamond-Type Lattice (1971) (68)
HYDROGEN DIFFUSION IN CRYSTALLINE SEMICONDUCTORS (1991) (67)
Carbon Interstitial in the Diamond Lattice (1973) (66)
EPR of a carbon‐oxygen‐divacancy complex in irradiated silicon (1977) (61)
Infrared absorption of silicon irradiated by protons (1978) (58)
Diffusion of oxygen in silicon (1982) (56)
A quenched‐in defect in boron‐doped silicon (1977) (55)
Carbon interstitial in electron-irradiated silicon☆ (1977) (51)
Diffusion-Controlled Reaction Kinetics (1972) (50)
Defect distribution near the surface of electron‐irradiated silicon (1978) (49)
Defects in laser damaged silicon observed by DLTS (1978) (47)
ELECTRON IRRADIATION OF COPPER NEAR 10 K (1956) (46)
The self-trapping of hydrogen in semiconductors (1988) (42)
New epr spectra in neutron-irradiated silicon (II) (1972) (41)
EPR measurements in ion-implanted diamond (1974) (40)
Self‐Diffusion in Liquid Argon (1956) (40)
Passivation in silicon (1988) (39)
Hydrogen Incorporation in Crystalline Semiconductors (1992) (37)
Carbon‐oxygen complexes as nuclei for the precipitation of oxygen in Czochralski silicon (1982) (36)
Kinetic model for hydrogen reactions in boron‐doped silicon (1993) (33)
The mechanism of the enhancement of divacancy production by oxygen during electron irradiation of silicon. II. Computer modeling (1983) (33)
EPR Observation of an Au-Fe Complex in Silicon: I. Experimental Data (1981) (32)
Generation of divacancies in tin-doped silicon (1987) (31)
Defect Creation in Semiconductors (1975) (30)
On the Diffusion of Oxygen Dimer in a Silicon Crystal (1987) (29)
Materials Research Society Symposia Proceedings. Volume 59. Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon Held in Boston, Massachusetts on 2-5 December 1985, (1986) (27)
Charge-State Effects in Displacement Damage Invited Paper (1971) (26)
Photo-EPR experiments on defects in irradiated silicon (1976) (26)
LOW-TEMPERATURE RECOVERY IN IRRADIATED COPPER (1965) (25)
Configurations and Properties of Hydrogen in Crystalline Semiconductors (1991) (25)
Positron lifetimes in GaAs (1979) (24)
A transient capacitance study of radiation-induced defects in aluminum-doped silicon (1980) (24)
Semi-empirical calculations of hydrogen defects in silicon (1978) (23)
Oxygen-vibrational bands in irradiated silicon☆ (1977) (23)
Quenched‐in defects in flashlamp‐annealed silicon (1986) (22)
Correlation between the observed infrared stretching frequency and the bond character of the Si–H bond (1982) (21)
Hydrogen complexes and their vibrations in undoped crystalline silicon (1991) (21)
Growth of the 889 cm−1 infrared band in annealed electron‐irradiated silicon (1985) (21)
The mechanism of the enhancement in divacancy production by oxgyen during electron irradiation of silicon. I. Experimental (1982) (20)
EPR evidence of the self-interstitials in neutron-irradiated silicon (1974) (20)
Semi-Empirical Calculations for Stacking Faults in Diamond-Type Lattices (1975) (20)
Reactive ion etching of SiGe alloys using CF2Cl2 (1992) (19)
Ultraviolet effects on the chemical composition and optical properties of interstellar grains. (1972) (19)
Defects in Q‐switched laser annealed silicon (1983) (19)
Radiation damage, defects and surfaces☆ (1979) (18)
On the thermal donors in silicon (1984) (18)
Ionization enhanced diffusion (1973) (18)
High-Temperature Ion Implantation in Diamond (1978) (18)
Silicon-interstitial-oxygen-interstitial complex as a model of the 450 °C oxygen thermal donor in silicon (1991) (18)
RADIATION-INDUCED VOIDS IN METALS. Proceedings of the 1971 International Conference Held at Albany, New York, June 9--11, 1971. (1972) (17)
Electrolytical method for hydrogenation of silicon (1981) (17)
On the kinetics of thermal donor formation in silicon (1986) (17)
Thermal Diffusion in Krypton and Argon (1956) (16)
Threshold Measurements and the Production of Radiation Damage in the Noble Metals (1960) (15)
Hydrogen-related vibrations in crystalline silicon (1989) (15)
Diffusion behavior of implanted iron in fused silica glass (1988) (15)
Selective dry etching of silicon with respect to germanium (1990) (15)
Structure of the (1 1 1) hydrogen platelet in silicon (1991) (15)
Hydrogen in Silicon (1987) (14)
Photodegradation in silicon (1980) (14)
Impurity-Concentration Profile for an Exponentially Decaying Diffusion Coefficient in Irradiation Enhanced Diffusion (1976) (14)
The role of carbon in the precipitation of oxygen in silicon (1981) (14)
Defect creation in electronic materials (1974) (14)
The neutral divacancy in silicon (1982) (14)
Reactive ion etching of SiGe alloys using fluorine‐containing plasmas* (1993) (14)
Early Stages of Oxygen Clustering and Its Influence on Electrical Behavior of Silicon (1982) (14)
A study of the annealing of the 830 cm-1 IR band observed in electron-irradiated silicon (1986) (13)
Electron paramagnetic resonance in diamond implanted at various energies and temperatures (1974) (13)
ENERGY DEPENDENCE OF RECOVERY IN IRRADIATED COPPER (1959) (13)
DISCRETE RECOVERY SPECTRUM BELOW 65 K IN IRRADIATED COPPER (1958) (13)
Cluster Computations Related to Silicon Thermal Donors (1985) (12)
EPR Observation of an Au-Fe Complex in Silicon. II. Electronic Structure (1982) (12)
Semi‐Empirical LCAO Band Structures for Different Crystalline Phases of Tellurium (1973) (12)
Calculations on the properties of helium in silicon (1979) (12)
Ionization‐enhanced diffusion: Ion implantation in semiconductors (1973) (12)
Changes in the Creation of Point Defects Related to the Formation of Porous Silicon (1995) (12)
PERFORMANCE OF A HOT-WIRE THERMAL DIFFUSION COLUMN (1956) (11)
RADIATION DAMAGE IN SILICON AND GERMANIUM. (1970) (11)
The new shallow thermal donor series in silicon (1986) (11)
Correlated-Uncorrelated Reaction Kinetics in a Discrete Lattice (1968) (11)
Stress-induced alignment of anisotropic defects in crystals (1961) (10)
Hydrogen on Semiconductor Surfaces (1986) (10)
Report to the American Physical Society by the study group on physics problems relating to energy technologies: Radiation effects on materials (1975) (10)
Perturbation model for the thermal-donor energy spectrum in silicon (1986) (10)
Deep levels in electron irradiated edge‐defined film‐fed growth ribbon silicon (1981) (10)
Investigation of the electrical degradation of silicon Schottky contacts due to mercury contamination (1989) (9)
An in situ transmission electron microscopy study of electron‐beam‐induced amorphous‐to‐crystalline transformation of Al2O3 films on silicon (1993) (9)
Effects of deuterium plasmas on silicon near‐surface properties (1989) (9)
Correlated diffusion-controlled kinetics (1971) (9)
Iron‐vacancy‐oxygen complex in silicon (1988) (9)
ALPHA-PARTICLE BOMBARDMENT OF A$sup 36$ AND A$sup 4$$sup 0$ (1956) (9)
Electron paramagnetic resonance of free and bound holes in diamond (1972) (8)
Studies of implanted iron in silicon by channeling and Rutherford backscattering (1986) (8)
Semi-empirical lcao band structure calculation on the transition of diamond into the metallic state under pressure (1973) (8)
Morphology Change of Oxygen Precipitates in Cz-Si Wafers during Two-Step Heat-Treatment (1992) (8)
Ionization effects in damage production in semiconductors (1976) (8)
Radiation-Enhanced Oxygen-Related Thermal Donor Formation in Neutron-Transmutation-Doped Floating-Zone Silicon (1985) (8)
Simultaneous defect production and diffusion-limited recovery (1969) (8)
Semi-Empirical Tight Binding Calculations for the Energy Bands of the Diamond and Zincblende Type Semiconductors (1984) (8)
Jahn-Teller distortions for carbon interstitialcy configurations in diamond (1976) (7)
The effect of spatial correlations on steady-state nucleation kinetics in dense fluid systems (1977) (7)
Diffusion of Hydrogen in Semiconductors (1992) (7)
The Effect of Spatial Correlations on the Steady State Nucleation ofVoids (1978) (7)
The Low-Temperature Metal-Organic Chemical Vapor Deposition (Ltmocvd) Route to Amorphous Silicon Semiconductors (1990) (7)
Hydrogen in Semiconductors: Crystal growth and device processing (1992) (6)
Endor of a dislocation center in a deformed silicon (1978) (6)
Ionization effects on impurity and defect migration in semiconductors (1975) (6)
Semi-Empirical LCAO Calculations for Tellurium Crystals with Vacancies† (1974) (6)
Electron irradiation induced crystallization of amorphous Al2O3 films on silicon substrates (1993) (6)
Radiation effects in semiconductors, 1976 : invited and contributed papers from the International Conference on Radiation Effects in Semiconductors held in Dubrovnik, 6-9 September 1976 (1977) (6)
One- and Two-Oxygen Defects in Silicon - A Theoretical Study (1991) (5)
Paired temperature spectroscopy: a novel method to characterise traps in semiconductors (1986) (5)
Orientation dependence of oxygen thermal donors in silicon under stress (1987) (5)
Correlated Recovery Kinetics (1972) (5)
Response of Anisotropic Defects in Solids to Stress (1963) (5)
On the Core of the Thermal Donors in Silicon (1985) (5)
States of hydrogen in crystalline semiconductors (1989) (5)
Embrittlement of materials: Si(H) as a model system (1989) (5)
Paired temperature spectroscopy (PATS) for gap states in ordered and disordered semiconductors. I: Theoretical analysis (1987) (5)
Defect Aggregates In Silicon (1985) (4)
MNDO Calculation on Molecular Clusters Chosen to Model the Bonding of Oxygen in Silicon (1985) (4)
Etching silicon surfaces with hydrogen atoms (1988) (4)
A quantitative investigation of divacancy production enhancement by interstitial oxygen in electron-irradiated silicon (1983) (4)
Renormalization-group calculation of defects in solids (1978) (4)
Inflimne of Dopant type and Conceintrtion on Hydrogen Diffusion in Silicon (1988) (4)
Study of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior (1989) (4)
Techniques for Studying Ion Implantation In Diamond (1975) (4)
Characterization of impurities and defects by electron paramagnetic resonance and related techniques (1983) (4)
Electron paramagnetic resonance studies in neutron-irradiated silicon (1982) (4)
The fractal character of impurity eigenstates in a solid (1988) (4)
The gettering of copper by keV implantation of germanium into silicon (1995) (4)
Hydrogen Diffusion and Complex Formation in Silicon (1989) (4)
Unified model for the thermal donor energy spectra In silicon and germanium (1986) (4)
Impurity concentration profile in irradiation enhanced diffusion experiments (1974) (4)
Depletion of interstitial oxygen in silicon and the thermal donor model (1987) (4)
Electron paramagnetic resonance in low-temperature electron-irradiated diamond (1977) (3)
Studies of Oxygen Thermal Donor Formation Under Stress (1985) (3)
A theorem concerning ionization and relaxation energies (1974) (3)
Chaos and Stability in Defect Processes in Semiconductors (1992) (3)
Computation of Structure, Stability and Gap States for Core Models of the Oxygen Thermal Donors in Silicon (1991) (3)
Theoretical Studies on the Structure for the Core of Oxygen Thermal Donors in Silicon (1992) (3)
Defect states in carbon and oxygen implanted p‐type silicon (1990) (3)
Semi‐Empirical Calculations of the Configuration and Electronic Structure of Lithium‐Related Defects in Silicon (1980) (3)
An EPR Study on High Energy Ion Implanted Silicon (1975) (3)
Shallow Impurity Passivation by Atomic Hydrogen (1992) (3)
Effects of radiation on gold diffusion in silicon (1976) (3)
Chapter 4 Hydrogen Passivation of Damage Centers in Semiconductors (1991) (3)
On the Complex of the Oxygen Interstitial and the Silicon Interstitial in Silicon (1984) (3)
Electron Paramagnetic Resonance in Semiconductors (1980) (3)
Formation Kinetics of Thermal Donors in Silicon (1985) (3)
On the nature of IR absorption peaks introduced by the absorbed hydrogen on Si surface (1983) (3)
The tellurium band gap as a function of lattice parameteres (1973) (3)
Impact of Defects Formed in Neutron Transmutation Doping of Silicon on Device Performance (1981) (3)
Dose-rate dependence of the stress in Ar+ ion-implanted silicon (1992) (3)
Self-interstitial complexes in silicon (1994) (2)
EPR Studies on Quenched-In-Defects in Silicon, (1979) (2)
An EPR study of optical absorption of the oxygen-vacancy pair in electron-irradiated silicon (1976) (2)
Recoil‐ and field‐enhanced diffusion (1977) (2)
Hydrogen and the Mechanical Properties of Semiconductors (1992) (2)
Hydrogen-Related Defects in Semiconductors (1992) (2)
ANALYSIS OF MINE-DROP SIGNATURES FOR RISE-TIME, AMPLITUDE, AND FREQUENCY CHARACTERISTICS (1953) (2)
The diffusion and electronic structure of hydrogen in silicon (1988) (2)
Paired temperature spectroscopy (PATS) for gap states in ordered and disordered semiconductors: II. Experimental applications (1987) (2)
Interaction of Point Defects with Hydrogen in Germanium (1983) (2)
Inversion of chalcogen defect levels in silicon - An MNDO study. [modified neglect of diatomic overlap (1985) (2)
Electron irradiation effects in edge-defined film-fed growth ribbon silicon (1983) (2)
Comments on thermal donor states in silicon and germanium (1986) (2)
Citation Index misleading (1976) (2)
ON THE INTERPRETATION OF RADIATION EFFECTS IN THE NOBLE METALS (1958) (2)
Ion Implantation Induced Sheet Stress due to Defects in Thin (100) Silicon Films (1992) (2)
A Unified Treatment of The Thermal Donor Hierarchies in Silicon and Germanium (1985) (2)
Study of Amorphization Process in Silicon Irradiated by Different Ions Using In Situ Stress-Measurement and TEM Techniques (1991) (2)
Non-equilibrium phase transitions during ion-beam-induced amorphization-crystallization of semiconductors (1993) (1)
Evolution of point defects during swirl formation in semiconductors (1993) (1)
Microscopic Properties of Hydrogen-Related Complexes in Silicon from Vibrational Spectroscopy (1992) (1)
Collision Cascades and Fractals (1987) (1)
The principle of reactive independence in radiation and photo experiments (1974) (1)
New traps for H0 in p-type Si (1991) (1)
Comparison of an Extended Interstitial with a Split Interstitial in Silicon (1984) (1)
Temperature Dependence of Ion-Beam-Induced In-Plane Stress in Silicon (1992) (1)
New Traps for H0 in Boron- and Phosphorus-Doped Si (1992) (1)
An orientation-dependent defect in ion-implanted silicon☆ (1974) (1)
Passivation of Deep Levels by Hydrogen (1992) (1)
High-energy electron-induced damage production at room temperature in aluminum-doped silicon (1979) (1)
The vacancy in cubic tetrahedrally coordinated materials (1981) (1)
Defects in semiconductors II : symposium held November 1982 in Boston, Massachusetts, U.S.A. (1983) (1)
Defects in Silicon: Fundamentals (1992) (0)
Don’t forget Prometheus (1989) (0)
Studies of disorder induced by ion implantation into silicon using in situ stress measurement technique (1993) (0)
Amorphization-Crystallization of Semiconductors during Ion Implantation as a Non-Equilibrium Phase Transitions (1992) (0)
A New Photoluminescent Center in Mercury-Doped Silicon (1993) (0)
Interactions, Stability and Dimensionality in the Problem of Defect Transformation in Semiconductors under Irradiation (1992) (0)
The Microscopic Characteristics of Impurity-Hydrogen Complexes in III-V Semiconductors (1992) (0)
Hydrogen, and Semiconductor Surfaces and Surface Layers (1992) (0)
Photoluminescence Study of Hydrogen-Related Defects in Silicon (1993) (0)
The Effects of High and Low Dose Hydrogen Ion Implantations on Al/n-Si Schottky Diodes (1987) (0)
Fractal dimension of ion cascades in matter (1988) (0)
Theory of reaction kinetics. Progress report. (1973) (0)
A metastable model for interstitial oxygen depletion in silicon (1988) (0)
Theoretical Studies of the Chemistry and Physics of Oxygen in Silicon (1988) (0)
Effects of defect recombination centers on radiation damage in solar cells (1977) (0)
Calculation of Hydrogen Related Vibrations in Crystalline Silicon (1992) (0)
On anelastic loss processes (1964) (0)
Some Recent Books on Solar Cells (1977) (0)
The End Of The Tale and Other Stories (1987) (0)
Electronic Structure of Point Defects in Semiconductor Alloys (1991) (0)
Solution manuals and students (1985) (0)
Studies of oxygen-related and carbon-related defects in high-efficiency solar cells (1985) (0)
Diffusion Dans Les Semiconducteurs du Groupe IV (Diffusion in Semiconductors of Group IV) (1976) (0)
DLTS Measurememts oll Hydrogen Implanted Germamluln (2002) (0)
Sign of the principal g values of deep impurity and radiation induced defects in silicon and diamond (1974) (0)
The status of defect studies pertinent to radiation damage in silicon solar cells (1977) (0)
Vacancies and {V,Hn} Complexes in Si: Stable Structures, Relative Stability, and Diffusion Properties (1993) (0)
Prevalence of Hydrogen Incorporation and Device Applications (1992) (0)
A Sheet Stress Measurement Technique Using Thin Films to Measure Stresses in Inert-Gas Implanted Silicon (1992) (0)
Resonance Studies Pertinent to Hydrogen in Semiconductors (1992) (0)
Inactivation of implanted impurities during buried Si3N4 layer formation (1991) (0)
A New Method for Measuring Ion Implantation Amorphous Dose In Situ (1991) (0)
Oxygen and carbon in silicon (1985) (0)
Amorphization of Semiconductors under Irradiation (1992) (0)
On the diffusion of oxygen in a silicon crystal (1988) (0)
Effect of Multiple Trapping on Hydrogen Diffusion in Silicon (1992) (0)
Theory of reaction kinetics. Final report, 1 June 1974--31 May 1975 (1975) (0)
Studies of oxygen- and carbon-related defects in high-efficiency silicon solar cells (1984) (0)
EPR and transient capacitance studies on electron-irradiated silicon solar cells (1977) (0)
Long-Range Correlations and Hydrogen Diffusion in Silicon (1992) (0)
Transformations Produced by Ion Implantation in Ion-Beam Amorphized Semiconductors (1992) (0)
Anomalies in the Properties of Defects in Irradiated Semiconductors (1992) (0)
Radiation Damage, Defects and the Amorphous State in Irradiated Semiconductors (1992) (0)
Instabilities and nonlinearities in defect recombination processes (1990) (0)
LCAO--MO calculations on the self-interstitial and Frenkel pairs in tellurium (1975) (0)
Modeling of radiation damage in silicon solar cells (1980) (0)
Studies of Radiation Damage in Semiconductors (1972) (0)
Molecular Theory of Nucleation (1973) (0)

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