Jan Evans-Freeman
#87,249
Most Influential Person Now
New Zealand engineering professor
Jan Evans-Freeman's AcademicInfluence.com Rankings
Jan Evans-Freemanengineering Degrees
Engineering
#5543
World Rank
#6804
Historical Rank
Applied Physics
#3705
World Rank
#3841
Historical Rank
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Engineering
Jan Evans-Freeman's Degrees
- PhD Engineering University of Auckland
Why Is Jan Evans-Freeman Influential?
(Suggest an Edit or Addition)According to Wikipedia, Jan H. Evans-Freeman was the pro-vice-chancellor of the University of Canterbury College of Engineering between 2009 until 2021, and is an English-New Zealand professor of engineering. She is now the pro-vice-chancellor of sustainability at the University of Canterbury After obtaining a Ph.D. at the University of Manchester she moved to Sheffield Hallam University and then University of Canterbury in 2009. As well as her academic roles, she holds a number of industry roles.
Jan Evans-Freeman's Published Works
Published Works
- LAPLACE-TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY STUDIES OF THE G4 GOLD-HYDROGEN COMPLEX IN SILICON (1998) (28)
- Current transport mechanisms and deep level transient spectroscopy of Au/n-Si Schottky barrier diodes (2011) (26)
- Hydrogen reactions with electron irradiation damage in silicon (1999) (22)
- High resolution electrical studies of vacancy-rich and interstitial-rich regions in ion-implanted silicon (2003) (20)
- Optical and AFM study of electrostatically assembled films of CdS and ZnS colloid nanoparticles (2008) (17)
- Gold-hydrogen Complexes in Silicon (1999) (16)
- Strong luminescence from erbium in Si/Si1–xGex/Si quantum well structures (1997) (14)
- The Role of Two-Dimensional Self-Interstitial Diffusion in Void Lattice Formation and Other Defect Phenomena in Metals (1987) (14)
- Luminescence from erbium implanted silicon–germanium quantum wells (1998) (13)
- Electrical characterization and DLTS analysis of a gold/n-type gallium nitride Schottky diode (2014) (12)
- High-resolution DLTS Studies of Vacancy-related Defects in Irradiated and in Ion-implanted n-type Silicon (2000) (11)
- High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon (2002) (11)
- Synthesis and Characterisation of Hydroxyapatite and Fluorapatite (2001) (11)
- Infrared photoreflectance of InAs (1997) (11)
- Erbium-doped Si1-xGex/Si structures for light emitting diodes (2000) (9)
- Carbon-related centres in irradiated SiGe alloys (2003) (8)
- Effect of doping on electronic states in B-doped polycrystalline CVD diamond films (2012) (7)
- Cell Attachment and Proliferation on Hydroxyapatite and Ion Substituted Hydroxyapatites (2002) (7)
- High resolution Laplace DLTS studies of defects in ion-implanted silicon (2002) (7)
- Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements (2012) (7)
- Deep electronic states associated with a metastable hole trap in n-type GaN (2007) (6)
- Effect of dislocations on the photoluminescence decay of 1.54 μm emission from erbium-doped silicon (2001) (6)
- Defect reactions associated with the dissociation of the phosphorus–vacancy pair in silicon (2001) (6)
- Vacancy-related defects in ion implanted and electron irradiated silicon (2000) (6)
- A comparison of the photoluminescence decay of erbium in silicon and silicon-germanium (2001) (6)
- High resolution minority carrier transient spectroscopy of defects in Si and Si/SiGe quantum wells (2001) (6)
- Chapter 7 – Erbium in silicon and silicon-germanium (2001) (5)
- Loss measurements of ER-doped silicon-on-insulator waveguides (2003) (5)
- Optical and electrical activity of defects in rare earth implanted Si (2006) (5)
- Rare earth doping of photonic materials: Mechanisms and devices (2008) (5)
- Erbium Related Defects in Gallium Arsenide (1997) (4)
- Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particles (2012) (4)
- The use of electron back-scattered diffraction to study the regrowth of amorphised silicon-based heterostructures (2001) (4)
- Nitrogen-Doped Silicon: Mechanical, Transport and Electrical Properties (2006) (4)
- Application of DLTS and Laplace-DLTS to defect characterization in high-resistivity semiconductors (2007) (4)
- Ni∕Al0.2Ga0.8N interfacial reaction and Schottky contact formation using high quality epitaxial layers (2008) (3)
- Characterisation of defects in p-GaN by admittance spectroscopy (2012) (3)
- High resolution Laplace deep level transient spectroscopy studies of electron and hole traps in n‐type GaN (2008) (3)
- High resolution minority carrier transient spectroscopy of Si/SiGe/Si quantum wells (2002) (3)
- Erbium in silicon–germanium quantum wells (1998) (2)
- Annealing studies of cluster defects in ion-implanted silicon using high resolution DLTS (2006) (2)
- High resolution deep level transient spectroscopy applied to extended defects in silicon (2005) (2)
- Dipole potential barrier simulation model for studying polar polymers (2007) (2)
- Characterisation of an SiO2/Si Interface with Slow Positrons (1992) (2)
- High resolution Laplace deep level transient spectroscopy of p‐type polycrystalline diamond (2008) (2)
- Structural and electrical characteristics of Ag/Al0.2Ga0.8N and Ag/Al0.3Ga0.7N Schottky contacts: an XPS study (2006) (1)
- High resolution DLTS of hydrogen reactions with defects in erbium-implanted silicon (2001) (1)
- High resolution deep level transient spectroscopy and process-induced defects in silicon (2004) (1)
- High resolution Laplace Deep Level Transient Spectroscopy studies of shallow and deep levels in n-GaN (2008) (1)
- Role of oxygen on the implantation related residual defects in silicon (2000) (1)
- Deep electronic states in ion-implanted Si (2006) (0)
- High resolution Deep Level Transient Spectroscopy of p-n diodes formed from p-type polycrystalline diamond on n-type silicon. (2008) (0)
- Proceedings of the Frontiers of Condensed Matter V (FCM 2010) (2012) (0)
- HIGH RESOLUTION LAPLACE DEEP LEVEL TRANSIENT SPECTROSCOPY A NEW TOOL TO STUDY IMPLANT DAMAGE IN SILICON (2002) (0)
- Optical properties of electrostatically assembled films of CdS and ZnS colloid nanoparticles (2006) (0)
- Proceedings of the 26th International Conference on Defects in Semiconductors (ICDS-26) (2012) (0)
- PREFACE: Workshop on `The Physics of Group IV Materials', 7 10 April 2003, Exeter (2003) (0)
- Positron Beam Measurements on Hydrogen Implanted Silicon (1992) (0)
- Separation of dislocation- and erbium-related photoluminescence by time resolved studies (2001) (0)
- The effect of hole confinement on photoluminescence from Er in SiGe/Si quantum wells (2008) (0)
- Laplace Deep Level Transient Spectroscopy of ultra shallow implanted junctions in Si (2008) (0)
- Coordination Action on Defects Relevant to Engineering Silicon-Based Devices (2005) (0)
- Point and Extended Defects in Ion Implanted Silicon (2009) (0)
- Light Emission From Erbium Doped Si1-x XGe1Heterostructures (1998) (0)
- High Resolution Deep Level Transient Spectroscopy of Hydrogen Interactions with Ion Implantation-Induced Defects in Silicon (2003) (0)
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Jan Evans-Freeman is affiliated with the following schools: