Jan-Eric Sundgren
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Swedish engineer
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Why Is Jan-Eric Sundgren Influential?
(Suggest an Edit or Addition)According to Wikipedia, Jan-Eric Sundgren , is a Swedish engineer who served as senior vice president at Volvo Group from 2006 until 2013. Prior to that, he was a professor of physics at Linköping University, and served as rector at Chalmers University of Technology from 1998 until 2006.
Jan-Eric Sundgren's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Structure and properties of TiN coatings (1985) (799)
- Growth of single-crystal TiN/VN strained-layer superlattices with extremely high mechanical hardness (1987) (657)
- Oxidation of metastable single‐phase polycrystalline Ti0.5Al0.5N films: Kinetics and mechanisms (1990) (481)
- Thin films: Stresses and mechanical properties VI (1997) (450)
- Role of nitrogen in the formation of hard and elastic CN x thin films by reactive magnetron sputtering (1999) (426)
- Development of preferred orientation in polycrystalline TiN layers grown by ultrahigh vacuum reactive magnetron sputtering (1995) (342)
- Microstructure modification of TiN by ion bombardment during reactive sputter deposition (1989) (279)
- Mechanisms of reactive sputtering of titanium nitride and titanium carbide II: Morphology and structure (1983) (252)
- Nanoindentation studies of single‐crystal (001)‐, (011)‐, and (111)‐oriented TiN layers on MgO (1996) (225)
- High‐flux low‐energy (≂20 eV) N+2 ion irradiation during TiN deposition by reactive magnetron sputtering: Effects on microstructure and preferred orientation (1995) (223)
- Microstructure and physical properties of polycrystalline metastable Ti0.5Al0.5N alloys grown by d.c. magnetron sputter deposition (1987) (210)
- Growth of poly- and single-crystal ScN on MgO(001): Role of low-energy N2+ irradiation in determining texture, microstructure evolution, and mechanical properties (1998) (208)
- Polycrystalline TiN films deposited by reactive bias magnetron sputtering: Effects of ion bombardment on resputtering rates, film composition, and microstructure (1992) (205)
- Structural and mechanical properties of carbon nitride CNx (0.2⩽x⩽0.35) films (1996) (204)
- Average energy deposited per atom : a universal parameter for describing ion-assisted film growth ? (1993) (193)
- Crystal growth and microstructure of polycrystalline Ti1−xAlxN alloy films deposited by ultra-high-vacuum dual-target magnetron sputtering (1993) (188)
- Growth and properties of single crystal TiN films deposited by reactive magnetron sputtering (1985) (176)
- Mechanisms of reactive sputtering of titanium nitride and titanium carbide I: Influence of process parameters on film composition (1983) (171)
- Synthesis of metastable epitaxial zinc‐blende‐structure AlN by solid‐state reaction (1992) (171)
- Reactive magnetron sputter deposited CNx: Effects of N2 pressure and growth temperature on film composition, bonding, and microstructure (1996) (153)
- Growth, microstructure, and mechanical properties of arc evaporated TiCxN1-x (0 <= x <= 1) films (2000) (149)
- Microstructures of TiN films grown by various physical vapour deposition techniques (1991) (149)
- Influence of residual stresses on the mechanical properties of TiCxN1-x (x = 0, 0.15, 0.45) thin films deposited by arc evaporation (2000) (149)
- Effects of high‐flux low‐energy (20–100 eV) ion irradiation during deposition on the microstructure and preferred orientation of Ti0.5Al0.5N alloys grown by ultra‐high‐vacuum reactive magnetron sputtering (1993) (147)
- Ion induced stress generation in arc‐evaporated TiN films (1995) (140)
- REACTIVE MAGNETRON SPUTTER-DEPOSITION OF CNX FILMS ON SI(001) SUBSTRATES - FILM GROWTH, MICROSTRUCTURE AND MECHANICAL-PROPERTIES (1994) (137)
- Defect structure and phase transitions in epitaxial metastable cubic Ti0.5Al0.5N alloys grown on MgO(001) by ultra‐high‐vacuum magnetron sputter deposition (1991) (136)
- Electronic structure of carbon nitride thin films studied by X-ray spectroscopy techniques (2005) (135)
- Fullerene-like Carbon Nitride: A Resilient Coating Material (2003) (133)
- CARBON NITRIDE NANOTUBULITE - DENSELY-PACKED AND WELL-ALIGNED TUBULAR NANOSTRUCTURES (1999) (119)
- Mechanisms of reactive sputtering of titanium nitride and titanium carbide III: Influence of substrate bias on composition and structure (1983) (116)
- Low-temperature growth and critical epitaxial thicknesses of fully strained metastable Ge1−xSnx (x≲0.26) alloys on Ge(001)2×1 (1998) (114)
- Growth of epitaxial TiN films deposited on MgO(100) by reactive magnetron sputtering: The role of low-energy ion irradiation during deposition (1988) (111)
- Microstructure and electronic properties of the refractory semiconductor ScN grown on MgO(001) by ultra-high-vacuum reactive magnetron sputter deposition (1998) (109)
- Nitrogen bonding structure in carbon nitride thin films studied by soft x-ray spectroscopy (2001) (106)
- Formation of polyhedral N2 bubbles during reactive sputter deposition of epitaxial TiN(100) films (1989) (101)
- Effect of Chemical Sputtering on the Growth and Structural Evolution of Magnetron Sputtered CNx Thin Films (2001) (100)
- Kinetics of nitride formation on titanium targets during reactive sputtering (1983) (99)
- Low‐energy ion irradiation during film growth for reducing defect densities in epitaxial TiN(100) films deposited by reactive‐magnetron sputtering (1987) (98)
- Indium overlayers on clean Si(100)2×1: Surface structure, nucleation, and growth (1986) (97)
- Mechanical and tribological properties of CNx films deposited by reactive magnetron sputtering (2001) (95)
- Microstructural investigation of droplets in arc-evaporated TiN films (1994) (84)
- Effects of substrate temperature and substrate material on the structure of reactively sputtered TiN films (1984) (79)
- Influence of plasma parameters on the growth and properties of magnetron sputtered CNx thin films (2000) (77)
- NITROGEN 1S ELECTRON BINDING ENERGY ASSIGNMENT IN CARBON NITRIDE THIN FILMS WITH DIFFERENT STRUCTURES (1997) (76)
- Transmission electron microscopy studies of microstructural evolution, defect structure, and phase transitions in polycrystalline and epitaxial Ti1-xAlxN and TiN films grown by reactive magnetron sputter deposition (1991) (72)
- Cross-section preparation for TEM of film-substrate combinations with a large difference in sputtering yields (1986) (72)
- Microstructure evolution in TiN films reactively sputter deposited on multiphase substrates (1986) (71)
- Adsorption of tri-methyl aluminum molecules on silicon (1988) (71)
- Structural macro-defects in 6H-SiC wafers (1993) (70)
- Hydrogen uptake in alumina thin films synthesized from an aluminum plasma stream in an oxygen ambient (1999) (67)
- Ar and excess N incorporation in epitaxial TiN films grown by reactive bias sputtering in mixed Ar/N2 and pure N2 discharges (1989) (65)
- GROWTH OF EPITAXIAL ALN(0001) ON SI(111) BY REACTIVE MAGNETRON SPUTTER-DEPOSITION (1995) (62)
- Incorporation of accelerated low-energy (50-500 eV) In + ions in Si(100) films during growth by molecular-beam epitaxy (1989) (60)
- Residual stresses and fracture properties of magnetron sputtered Ti films on Si microelements (1993) (58)
- Electrical and optical properties of CNx(0⩽x⩽0.25) films deposited by reactive magnetron sputtering (2001) (57)
- Influence of an external axial magnetic field on the plasma characteristics and deposition conditions during direct current planar magnetron sputtering (1994) (56)
- Yttrium oxide inclusions in YBa2Cu3Ox thin films: Enhanced flux pinning and relation to copper oxide surface particles (1992) (55)
- Comparison of magnetron sputter deposition conditions in neon, argon, krypton, and xenon discharges (1993) (55)
- Microstructural and microchemical characterization of hard coatings (1986) (53)
- Stress development during deposition of CNx thin films (1998) (51)
- Growth of CN x H y films by reactive magnetron sputtering of carbon in Ar/NH 3 discharges (1996) (49)
- Reactive deposition of tin films using an unbalanced magnetron (1989) (49)
- Interfacial reactions in single-crystal-TiN (100)/Al/polycrystalline-TiN multilayer thin films (1992) (47)
- Growth, structural characterization and properties of hard and wear-protective layered materials (1990) (45)
- Nucleation and initial growth of In deposited on Si3N4 using low‐energy (≤300 eV) accelerated beams in ultrahigh vacuum (1987) (45)
- Influence of substrate bias on composition and structure of reactively r.f.-sputtered TiC films☆ (1981) (45)
- Titanium deposition onto ion-bombarded and plasma-treated polydimethylsiloxane: Surface modification, interface and adhesion (1986) (45)
- Growth of 3CSiC on on-axis Si(100) substrates by chemical vapor deposition (1995) (45)
- Growth of epitaxial 3C‐SiC films on (111) silicon substrates at 850 °C by reactive magnetron sputtering (1993) (44)
- Thermal stability of carbon nitride thin films (2001) (44)
- Reactively magnetron sputtered Hf‐N films. I. Composition and structure (1985) (44)
- Growth, structure, and mechanical properties of CNxHy films deposited by dc magnetron sputtering in N2/Ar/H2 discharges (2000) (43)
- A low-energy metal-ion source for primary ion deposition and accelerated ion doping during molecular-beam epitaxy (1987) (43)
- Indium incorporation during the growth of (100)Si by molecular beam epitaxy: Surface segregation and reconstruction (1984) (42)
- Composition, structure, and dielectric tunability of epitaxial SrTiO3 thin films grown by radio frequency magnetron sputtering (1999) (39)
- The microstructure of reactively sputtered Ti-N films (1983) (39)
- Electrical properties of Si films doped with 200‐eV In+ ions during growth by molecular‐beam epitaxy (1989) (39)
- Chapter 5 – LOW-ENERGY ION/SURFACE INTERACTIONS DURING FILM GROWTH FROM THE VAPOR PHASE (1989) (38)
- Structure of reactively magnetron sputtered Hf‐N films (1984) (37)
- Interfacial reactions in epitaxial Al/Ti1−xAlxN (0≤x≤0.2) model diffusion‐barrier structures (1993) (37)
- Reactive magnetron sputtering of CNx thin films at different substrate bias (1997) (37)
- Epitaxial growth of Ni on MgO(002)1×1: surface interaction vs. multidomain strain relief (1999) (36)
- Growth of high-quality 3C-SiC epitaxial films on off-axis Si(001) substrates at 850 °C by reactive magnetron sputtering (1994) (35)
- Adsorption and desorption kinetics of In on Si(100) (1989) (34)
- Design and characterization of a compact two‐target ultrahigh vacuum magnetron sputter deposition system: Application to the growth of epitaxial Ti1−xAlxN alloys and TiN/Ti1−xAlxN superlattices (1993) (34)
- The role of ion/surface interactions and photo-induced reactions during film growth from the vapor phase (1987) (33)
- Epitaxial growth of Al on Si by thermal evaporation in ultra-high vacuum: growth on Si(100)2 × 1 single and double domain surfaces at room temperature (1990) (33)
- Ar incorporation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N2 discharges (1988) (32)
- A review of the present understanding of the role of ion/surface interactions and photo-induced reactions during vapor-phase crystal growth (1986) (31)
- Measurement of the lattice parameters in the individual layers of single‐crystal superlattices (1995) (31)
- Growth of metastable Ge1−xSnx/Ge strained layer superlattices on Ge(001)2×1 by temperature‐modulated molecular beam epitaxy (1995) (31)
- Interfacial void formation during vapor phase growth of 3C-SiC on Si(0 0 1) and Si(1 1 1) substrates. Characterization by transmission electron microscopy (1997) (30)
- Microstructure of amorphous C:H and metal-containing C:H films deposited on steel substrates (1993) (29)
- Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy (1988) (29)
- Target presputtering effects on stoichiometry and deposition rate of Y‐Ba‐Cu‐O thin films grown by dc magnetron sputtering (1988) (28)
- Epitaxial growth of ZrN on Si(100) (1988) (27)
- Composition and structure of epitaxial β-SiC films grown by reactive magnetron sputtering on Si(100) substrates (1992) (26)
- The microstructure of reactively sputtered Ti-N films containing the Ti2N phase (1985) (26)
- Growth and structural characterization of single-crystal (001) oriented MoV superlattices (1990) (25)
- Growth of TaC thin films by reactive direct current magnetron sputtering: Composition and structure (1990) (23)
- Growth of CNx/BN:C multilayer films by magnetron sputtering (2000) (22)
- Mg–Ti–spinel formation by interfacial solid-state reaction at the TiN/MgO interface (1989) (22)
- Grazing incidence x‐ray diffraction studies of the initial growth of Pd on MgO(001) (1996) (21)
- Morphology and microstructure of epitaxial Cu(001) films grown by primary ion deposition on Si and Ge substrates (1996) (21)
- Corrosion behaviour of monocrystalline titanium nitride (1997) (20)
- Initial growth of Pd on MgO(0 0 1) (1998) (20)
- Reptation: a mechanism for cluster migration on (111) face-centered-cubic metal surfaces (1999) (19)
- Structure and surface morphology of epitaxial Ni films grown on MgO(111) substrates : growth of high quality single domain films (1999) (19)
- Asymmetric interface broadening in epitaxial Mo/W (001) superlattices grown by magnetron sputtering (1998) (19)
- Electronic properties of epitaxial TiN/VN(001) superlattices (1991) (18)
- Growth and characterization of 3C-SiC films on Si substrates by reactive magnetron sputtering; effects of CH4 partial pressure on the crystalline quality, structure and stoichiometry (1995) (17)
- Growth, structure, and physical properties of single‐phase metastable fcc Cu1−xCrx solid solutions (1988) (16)
- Anisotropies in magnetron sputtered carbon nitride thin films (2001) (16)
- In situ scanning tunneling microscopic and spectroscopic investigation of magnetron-sputtered C and CN thin films (2000) (16)
- Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering (1996) (16)
- TiNx (0.6<x<1.2): Atomic arrangements, Electronic structure and recent results on crystal growth and physical properties of epitaxial layers (2008) (15)
- Ion irradiation effects during growth of Mo/V(001) superlattices by dual-target magnetron sputtering (1992) (15)
- Growth, electrical properties and reciprocal lattice mapping characterization of heavily B-doped, highly strained silicon-molecular beam epitaxial structures (1994) (15)
- Microstructure evolution in amorphous Ge/Si multilayers grown by magnetron sputter deposition (1997) (15)
- Characterization of carbon nitride thin films deposited by reactive d.c. magnetron sputtering on various substrate materials (1998) (15)
- DOPANT INCORPORATION KINETICS AND ABRUPT PROFILES DURING SILICON MOLECULAR BEAM EPITAXY (1989) (15)
- Texture Evolution in Si/SiC Layered Structures Deposited on Si(001) by Chemical Vapor Deposition (1998) (15)
- Microstructure of Nitride and Carbide Coatings Prepared by Physical Vapor Deposition Methods (1984) (14)
- Structure evolution of epitaxial Pd grown on MgO(001): a comparison between sputtering and electron-beam evaporation (1999) (14)
- Effect of substrate bias on the protective properties of TiN films grown by reactive magnetron sputtering onto Cu substrates (1989) (14)
- Study Of Ion Mixing During Auger Depth Profiling Of Ge-Si Multilayer System. Ii. Low Ion Energy (0.2-2 Kev) Range (1995) (14)
- Dopant depth distributions as a function of growth temperature in In‐doped (100)Si grown by molecular beam epitaxy (1985) (14)
- Chemical bonding, structure, and hardness of carbon nitride thin films (2000) (13)
- Enhanced cluster mobilities on Pt(111) during film growth from the vapor phase (1998) (13)
- Adatom-induced diffusion of two-dimensional close-packed Pt7 clusters on Pt(111) (1996) (13)
- Ion beam-sputtered and magnetron-sputtered thin films on cytoskeletons: A high-resolution tem study (1989) (13)
- Metastable (GaSb)(1-x)(Sn2)x alloys: Crystal growth and phase stability of single crystal and polycrystalline layers (1986) (13)
- ANNEALING INDUCED INTERDIFFUSION AND CRYSTALLIZATION IN SPUTTERED AMORPHOUS SI/GE MULTILAYERS (1997) (12)
- Relation between electrical activation and the B-induced strain in Si determined by reciprocal lattice mapping (1994) (12)
- Concentration transient analysis of antimony surface segregation during Si(001) molecular beam epitaxy (1991) (11)
- Epitaxial growth of Al on Si (100) and Si (111) by evaporation in uhv (1990) (11)
- Time-resolved measurements of the formation of single-domain epitaxial Ni films on MgO(111) substrates using in-situ RHEED analysis (1999) (11)
- Structural characterization of oxide layers thermally grown on 3C-SiC films (1995) (11)
- Ion energy distributions in reactive arc evaporation discharges used for deposition of TiN films (1997) (11)
- Cluster diffusion and surface morphological transitions on Pt (111) via reptation and concerted motion (2000) (11)
- Hardness and Deformation Mechanisms of Highly Elastic Carbon Nitride Thin Films as Studied By Nanoindentation (1996) (10)
- Summary Abstract: Thermal and accelerated (≤200 eV) In doping of Si(100) layers during molecular beam epitaxy (1986) (10)
- Chemical bonding in carbon nitride films studied by X-ray spectroscopies (2001) (10)
- Template-synthesized BN : C nanoboxes (2000) (10)
- Hydrogen Uptake in Mo/V Multi Layered Single-Crystal Superlattices — The Role of Charge Transfer at Interfaces* (1993) (9)
- Real time measurements of surface growth evolution in magnetron sputtered single crystal Mo/V superlattices using in situ reflection high energy electron diffraction analysis (1999) (9)
- Incorporation probabilities and depth distributions of aluminum co-evaporated during Si(100) molecular beam epitaxy (1990) (9)
- Growth of Ge/Si Amorphous Superlattices by Dual-Target DC Magnetron Sputtering (1992) (9)
- N1s Electron Binding Energies of CN_x Thin Films Grown by Magnetron Sputtering at Different Temperature (2009) (9)
- Fabrication and characterization of MOS devices on 3CSiC films grown by reactive magnetron sputtering on Si(111) substrates (1996) (8)
- Summary Abstract: Structure and properties of nitride thin films grown by magnetron sputter deposition: Effects of ion irradiation during growth (1988) (8)
- Determination of the valence electronic structure of condensed trimethylaluminum by photoelectron spectroscopy and molecular‐orbital calculations (1988) (8)
- Incorporation of in by recoil implantation during MBE growth of Si(100) (1989) (8)
- 3C-SIC/SI/3C-SIC EPITAXIAL TRILAYER FILMS DEPOSITED ON SI(111) SUBSTRATES BY REACTIVE MAGNETRON SPUTTERING (1995) (8)
- Epitaxial growth of UHV magnetron sputtered Mo thin films on MgO(001) substrates, oxygen segregation and surface reconstructions (1999) (8)
- Au schottky barrier diodes on β-SiC thin films deposited on silicon substrates by reactive magnetron sputtering technique (1991) (7)
- Growth, Structure and Properties of Hard Nitride Based Coatings and Multilayers (1995) (7)
- Characterization of Magnetron Sputter CN x Thin Films (1998) (7)
- Electron energy distribution function in DC magnetron axially symmetric discharges: evidence of spatial anisotropy (1994) (7)
- Low-Energy Ion/Surface Interactions during Film Growth from the Vapor Phase: Effects on Nucleation and Growth Kinetics, Defect Structure, and Elemental Incorporation Probabilities (1990) (7)
- The orientation dependence of the hydrogen distribution within Mo/V (110) and (001) multilayered artificial superlattices (1997) (7)
- Defects in amorphous and solid phase epitaxial silicon (1994) (7)
- Heterojunction diodes in 3C-SiC/Si system grown by reactive magnetron sputtering: Effects of growth temperature on diode rectification and breakdown (1996) (6)
- Structure evolution in Ag/Ni multilayers grown by ultra high vacuum DC magnetron sputtering (1999) (6)
- The effect of oxygen and substrate temperature on the growth of Ti thin films on stainless‐steel substrates (1983) (6)
- Gas porosity formation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N2 discharges (1993) (6)
- The Role of Low-Energy Ion/Surface Interactions During Crystal Growth From the Vapor Phase (1987) (6)
- Destabilization and diffusion of two-dimensional close-packed Pt clusters on Pt(111) during film growth from the vapor phase (1998) (6)
- Spectroscopic study of CNx films grown by magnetron sputter deposition (1999) (6)
- Xps, Ups, and Hreels Studies of Excimer-Laser-Induced Dissociation of Al2(Ch3) Adsorbed on Si(100) Surfaces (1987) (5)
- Reactive UHV Sputtering and Structural Characterization of Epitaxial AlN/6H-SiC(0001) Thin Films (1997) (5)
- Strain characterization of Ge1−xSix and heavily B-doped Ge layers on Ge(001) by two-dimensional reciprocal space mapping (1996) (5)
- Formation of Defects During Ion-Assisted Growth of Thin Films from the Vapor Phase (1992) (5)
- Surface Segregation of Boron During Si-MBE Growth (1991) (5)
- Low energy ion mixing in Si-Ge multilayer system (1994) (5)
- A comparison of AES and RBS analysis of the composition of reactively sputtered TiSix films (1983) (5)
- Summary Abstract: The role of low‐energy ion bombardment during the growth of epitaxial TiN(100) films by reactive magnetron sputtering: Defect formation and annihilation (1987) (5)
- Structure and properties of carbon nitride films deposited by magnetron sputtering (1999) (4)
- The effect of substrate temperature on the structure and hardness of magnetron sputtering deposited carbon nitride films (1999) (4)
- Compositional information from amorphous Si-Ge multilayers using high-resolution electron microscopy imaging and direct digital recording (1996) (4)
- Growth and ellipsometric studies of periodic and cantor aperiodic amorphous Ge/Si superlattices (1994) (4)
- Photoconductivity of single-crystal 3C-SiC films excited by ultrashort light pulses (1992) (4)
- Ion-assisted film growth: modification of structure and chemistry (1990) (4)
- Ion-assisted low-temperature (≤ 150 °C) epitaxial growth of TiN on Cu by reactive magnetron sputter deposition (1996) (4)
- Influence of the Si evaporation source on the incorporation of In during Si molecular‐beam epitaxy growth: A comparative study of magnetically and electrostatically‐focused electron‐gun evaporators (1989) (4)
- Ambipolar diffusion in strained Si1−xGex(100) layers grown by molecular beam epitaxy (1991) (4)
- Summary Abstract: Metastable face‐centered‐cubic Cu1−xCrx alloys (0 (1988) (3)
- Extended energy loss fine structure analysis of hard and elastic carbon nitride thin films (1997) (3)
- Stress in Ag/Ni Multilayers: A Comparison of Specimen-Curvature and X-Ray Diffraction Methods (1997) (3)
- Enhanced magnetic moment of V in Mo/V multilayers (1995) (3)
- Correlation between structure and hardness of magnetron sputtering deposited CNx films (1999) (3)
- Amorphous Ge/Si Multilayer Structures as Models for Optical Memories (1992) (2)
- Structural and mechanical properties of composite films of iron particles in an oxide matrix (1978) (2)
- Characterisation of ion-implanted pn-junction diodes in β-SiC films grown on (100) silicon substrates by reactive magnetron sputtering (1992) (2)
- Summary Abstract: Hard coatings (1985) (2)
- Structure and Surface Morphology of Epitaxial Ni Films on MgO(111) and (001) Substrates: Growth of High Quality Single Domain Films (1998) (2)
- The effect of oxygen on the grain boundary and void structure of titanium films (1984) (2)
- Characterization of interfaces between hydrogenated amorphous carbon films and steel substrates using high resolution cross-sectional transmission electron microscopy (1993) (2)
- More global treaties (1994) (2)
- Experimental and Model Studies of Dopant Segregation During Growth of Silicon Films by Molecular Beam Epitaxy (1991) (1)
- Thermal Stability Characterization of Doped Layers and Heterostructures Grown by Si-MBE (1993) (1)
- Internal Stress In Sputtered Silver Nickel Thin Films And Multilayers: Sputtering Pressure And Thickness Effects (1999) (1)
- Metastable Hard Coatings (1997) (1)
- Properties of MOS Structure Fabricated on 3C-SiC Grown by Reactive Magnetron Sputtering. (1994) (1)
- Influence of Experimental Parameters on Reactive Magnetron Sputtering CN_x Thin Films (2009) (1)
- Ion-beam doping during molecular beam epitaxy (1989) (1)
- Hydrogen uptake of Mo/V superlattices (1993) (1)
- Growth, structure and properties of TiN coatings on steel substrates (2008) (1)
- An X-ray study of generalized Cantor superlattices (1994) (1)
- Physics of Glow Discharge Plasmas and Plasma/Surface Interactions During Thin Film Growth (1991) (0)
- Low-Energy Ion Irradiation Effects During Nucleation and Film Growth. (1987) (0)
- Indium Ion Doping During Si Molecular Beam Epitaxy (1987) (0)
- ACCELERATED-ION BEAM DOPING DURING SI GROWTH BY MOLECULAR BEAM EPITAXY AND ION-ENCHANCED IN FILM DEPOSITION USING A LOW-ENERGY (40-300 EV) IN ION SOURCE. (1986) (0)
- Growth of artificial structures, superlattices and metastable phases by PVD techniques (Invited) (1992) (0)
- Critical barriers to sustainable energy systems in perspective (2005) (0)
- The Role of Low-Energy Ion/Surface Interactions During Crystal Growth from the Vapor Phase: Effects on Microchemistry and Microstructure (1989) (0)
- TiN THIN FILMS: DEFECT GENERATION, RESIDUAL STRESSES AND HARDNESS (2000) (0)
- The Role of Ion/Surface Interactions During Film Growth from the Vapor Phase (1988) (0)
- Product design for resource efficiency: Background paper (2014) (0)
- Low-Energy Accelerated-Ion Doping of Si during Molecular Beam Epitaxy: Incorporation Probabilities, Depth Distributions, and Electrical Properties (1990) (0)
- Temperature Dependence of Ag/Ni Multilayer Microstructure Studied by in Situ X-Ray Diffraction (1999) (0)
- Reactive Magnetron Sputtering of CNx Thin Films on β-Si3N4 Substrates (1998) (0)
- Virtual Tools for Sustainable Manufacturing (2016) (0)
- Growth, Structure and Properties of Thin Films and Superlattice Structures (1991) (0)
- High Resolution Electron Microscopy Studies of Magnetron Sputtered Leek-Like CNx Films (1998) (0)
- The Materials Science Graduate Days (2013) (0)
- On the structure of iron particles in granular iron films (1979) (0)
- Stoichiometry and Deposition Rate of DC Magnetron Sputtered Y-Ba-Cu-O Thin Films as a Function of Target Presputtering Time (1988) (0)
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