Jasprit Singh
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Physics
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(Suggest an Edit or Addition)Jasprit Singh's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Physics of Semiconductors and Their Heterostructures (1992) (577)
- Electronic and Optoelectronic Properties of Semiconductor Structures (2007) (353)
- Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study (1997) (290)
- Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime (1988) (223)
- Semiconductor Device Physics and Design (2007) (191)
- Semiconductor Devices: Basic Principles (2000) (176)
- Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers (2003) (175)
- Role of interface roughness and alloy disorder in photoluminescence in quantum‐well structures (1985) (174)
- Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor (1999) (174)
- Theory of photoluminescence line shape due to interfacial quality in quantum well structures (1984) (134)
- Semiconductor Optoelectronics: Physics and Technology (1995) (128)
- Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting (2009) (112)
- Evidence for spin splitting in InxGa1-xAs/In0.52Al0.48As heterostructures as B0 (1989) (111)
- Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies (2000) (99)
- Optoelectronics: An Introduction to Materials and Devices (1996) (86)
- Semiconductor Devices: An Introduction. (1994) (80)
- Comparison of the k⋅p and direct diagonalization approaches to the electronic structure of InAs/GaAs quantum dots (2000) (77)
- Influence of disorder on the electronic structure of amorphous silicon (1981) (76)
- p‐type arsenic doping of CdTe and HgTe/CdTe superlattices grown by photoassisted and conventional molecular‐beam epitaxy (1990) (66)
- Band structure and charge control studies of n‐ and p‐type pseudomorphic modulation‐doped field‐effect transistors (1989) (61)
- Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy (1987) (59)
- Quantum mechanical theory of linewidths of localized radiative transitions in semiconductor alloys (1986) (55)
- Role of kinetics and thermodynamics in alloy clustering and surface quality in InAlAs grown by molecular‐beam epitaxy: Consequences for optical and transport properties (1986) (55)
- Nonequilibrium distribution in quantum dots lasers and influence on laser spectral output (1999) (54)
- Effect of spectral broadening and electron‐hole scattering on carrier relaxation in GaAs quantum dots (1994) (53)
- Transient study of self-heating effects in AlGaN/GaN HFETs: Consequence of carrier velocities, temperature, and device performance (2007) (52)
- Determination of interfacial quality of GaAs-GaAlAs multi-quantum well structures using photoluminescence spectroscopy (1985) (51)
- Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors (2004) (49)
- Quantum Mechanics: Fundamentals and Applications to Technology (1996) (48)
- Gate Leakage Suppression and Contact Engineering in Nitride Heterostructures (2003) (47)
- Design of high electron mobility devices with composite nitride channels (2003) (45)
- Coupled GaAs/AlGaAs quantum-well electroabsorption modulators for low-electric-field optical modulation (1989) (45)
- Observation of Phonon Bottleneck in Quantum Dot Electronic Relaxation (2001) (44)
- Theoretical investigations of the nature of the normal and inverted GaAs–AlGaAs structures grown by molecular beam epitaxy (1984) (42)
- Examination of tunnel junctions in the AlGaN/GaN system: Consequences of polarization charge (2000) (42)
- Theoretical studies of the intrinsic quality of GaAs/AlGaAs interfaces grown by MBE: Role of kinetic processes (1985) (41)
- Calculation of electron and hole impact ionization coefficients in SiGe alloys (1996) (39)
- Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs (2014) (38)
- Determination of the microscopic quality of InGaAs‐InAlAs interfaces by photoluminescence—Role of interrupted molecular beam epitaxial growth (1986) (38)
- A new method for solving the ground‐state problem in arbitrary quantum wells: Application to electron‐hole quasi‐bound levels in quantum wells under high electric field (1986) (37)
- Absorption and photoluminescence studies of the temperature dependence of exciton life time in lattice-matched and strained quantum well systems (1987) (37)
- Monte Carlo studies of ohmic hole mobility in silicon and germanium: Examination of the optical phonon deformation potential (1994) (35)
- Carrier velocity-field characteristics and alloy scattering potential in Si1-xGex/Si (1993) (35)
- Field‐dependent linewidths and photoluminescence energies in GaAs‐AlGaAs multiquantum well modulators (1986) (35)
- Comparative study of the growth processes of GaAs, AlGaAs, InGaAs, and InAlAs lattice matched and nonlattice matched semiconductors using high‐energy electron diffraction (1987) (34)
- A study of strain‐related effects in the molecular‐beam epitaxy growth of InxGa1−xAs on GaAs using reflection high‐energy electron diffraction (1987) (31)
- The effect of inhibited growth kinetics on GaInAs and AlInAs alloy and interface quality (1989) (30)
- Enhancement in excitonic absorption due to overlap in heavy‐hole and light‐hole excitons in GaAs/InAlGaAs quantum well structures (1987) (28)
- Surface orientation dependent surface kinetics and interface roughening in molecular beam epitaxial growth of III–V semiconductors: A Monte Carlo study (1983) (28)
- A study of novel growth approaches to influence the growth mechanism and interface quality in heterostructures grown by molecular beam epitaxy (1986) (27)
- Theoretical study of GaN growth: A Monte Carlo approach (1994) (27)
- Summary Abstract: Material properties and clustering in molecular‐beam epitaxial In0.52Al0.48As and In1−x−yGaxAlyAs (1987) (26)
- Role of numerical simulations in the semiconductor heterostructure technology using molecular beam epitaxy (1986) (26)
- Excitonic photoluminescence linewidths in AlGaAs grown by molecular beam epitaxy (1986) (24)
- In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures (1989) (24)
- The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−x As/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes (1990) (24)
- Self-assembled quantum dots: A study of strain energy and intersubband transitions (2002) (23)
- Conduction band spectra in self-assembled InAs/GaAs dots: A comparison of effective mass and an eight-band approach (1997) (23)
- Linear electro-optic effect due to the built-in electric field in InGaN/GaN quantum wells (1999) (23)
- Capacitance‐voltage measurements in amorphous Schottky barriers (1980) (22)
- Radiative and non-radiative inter-subband transition in self assembled quantum dots (1998) (22)
- Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x>0.53) HEMTs (1989) (21)
- Study of excitons in an arbitrarily shaped GaAs/Al0.3Ga0.7As single quantum well in the presence of static transverse electric field (1987) (20)
- A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method (2010) (20)
- System requirements and feasibility studies for optical modulators based on GaAs/AlGaAs multiquantum well structures for optical processing (1988) (20)
- Examination of LiNbO3/nitride heterostructures (2003) (19)
- Study of the low‐temperature line broadening mechanisms for excitonic transitions in GaAs/AlGaAs modulator structures (1986) (19)
- Intersubband absorption in annealed InAs/GaAs quantum dots: a case for polarization-sensitive infrared detection (2003) (19)
- Monte Carlo studies on the well‐width dependence of carrier capture time in graded‐index separate confinement heterostructure quantum well laser structures (1993) (18)
- Role of arsenic (As2, As) in controlling the quality of GaAs grown by MBE: Theoretical studies (1984) (18)
- Theoretical investigation of hole transport in strained III‐V semiconductors: Application to GaAs (1988) (18)
- Suppression of defect propagation in semiconductors by pseudomorphic layers (1993) (18)
- Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots (1998) (17)
- Variation of Hg incorporation in molecular‐beam epitaxially grown HgCdTe structures due to growth front roughness and misoriented substrates: Role of kink sites (1989) (17)
- Theoretical study on threshold energy and impact ionization coefficient for electrons in Si1−xGex (1994) (17)
- Determination of microscopic structural quality of molecular beam epitaxial grown GaAs/AlGaAs interface by high‐resolution photoluminescence spectroscopy (1985) (17)
- Effect of structural disorder on electronic states in GaAs/AlGaAs quantum wires (1991) (16)
- Theoretical formalism to understand the role of strain in the tailoring of hole masses in p‐type InxGa1−xAs (on GaAs substrates) and In0.53+xGa0.47−xAs (on InP substrates) modulation‐doped field‐effect transistors (1987) (16)
- Theory of polarization dependent intersubband transitions in p-type SiGe/Si self-assembled quantum dots (2004) (16)
- Inclusion of spin-orbit coupling into tight binding bandstructure calculations for bulk and superlattice semiconductors (1987) (15)
- Modern physics for engineers (1999) (15)
- Current–voltage characteristics of polar heterostructure junctions (2002) (15)
- Effect of image charges in the drain delay of AlGaN∕GaN high electron mobility transistors (2008) (15)
- Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the InxGa1- xAs/GaAs system (1996) (15)
- Direct measurement of the Hall factor for holes in relaxed Si1−xGex (0 (1994) (15)
- Prediction of kinetically controlled surface roughening: A Monte Carlo computer-simulation study (1983) (14)
- Refractive index and electro‐optic effect in compressive and tensile strained quantum wells (1991) (14)
- Study of charge control and gate tunneling in a ferroelectric-oxide-silicon field effect transistor: Comparison with a conventional metal-oxide-silicon structure (2001) (13)
- Initial stages of GaN/GaAs(100) growth by metalorganic chemical vapor deposition (1996) (13)
- High-resolution photoluminescence studies of GaAs/GaAlAs multi-quantum-well structures grown by molecular beam epitaxy (1986) (13)
- Low temperature silicon epitaxy using supersonic molecular beams (1995) (13)
- Role of thin multiquantum wells in controlling intrinsic interface quality in molecular beam epitaxially grown heterostructures (1985) (13)
- Use of cation‐stabilized conditions to improve compatibility of CdTe and HgTe molecular beam epitaxy (1989) (12)
- Polarization effects and transport in AlGaN/GaN system (2000) (12)
- Growth and properties of In0.52Al0.48As/In0.53Ga0.47As, GaAS: In and InGaAs/GaAs multilayers (1987) (11)
- Low‐temperature photoluminescence in AlxGa1−xAs grown by molecular beam epitaxy (1985) (11)
- Laser induced impact ionization in semiconductors: A Monte Carlo study for silicon (1996) (11)
- Spatial and spectral characteristics of spontaneous emission from semiconductor quantum wells in microscopic cylindrical cavities (1995) (10)
- Electron and hole impact ionization coefficients in GaAs/Al0.45Ga0.55As/Al0.3Ga0.7As coupled well systems (1991) (10)
- Reduction of Be out‐diffusion from heavily doped GaAs:Be layers by pseudomorphic InxGa1−xAs barrier layers (1994) (9)
- Role of bias conditions in the hot carrier degradation of AlGaN/GaN high electron mobility transistors (2013) (9)
- Photovoltaic spectra of undoped GaAsAl0.25Ga0.75As multiple quantum well structures: Correlation with photoluminescence (1986) (9)
- Monte Carlo studies of two dimensional transport in GaN/AlGaN transistors: Comparison with transport in AlGaAs/GaAs channels (2001) (9)
- Studies of carrier relaxation in low dimensional structures (1996) (9)
- Smart Electronic Materials: Contents (2005) (9)
- The tailoring of impact ionization phenomenon using pseudomorphic structures-applications to InGaAlAs on GaAs and InP substrates (1992) (9)
- Strained layer epitaxy of InGaAs by MBE and migration enhanced epitaxy — comparison of growth modes and surface quality (1991) (8)
- Study of carrier dynamics and radiative efficiency in InGaN/GaN LEDs with Monte Carlo method (2011) (8)
- Theoretical studies of polarization dependent electro-optical modulation in lattice matched and strained multi-quantum well structures (1987) (8)
- Field Effect Transistors (2008) (8)
- Smart Electronic Materials: Fundamentals and Applications (2005) (8)
- Analytical closed form expressions for the effective band edges in shallow quantum wells (1994) (8)
- Optimum separate confinement structure for midinfrared HgCdTe heterostructure lasers (1992) (8)
- Epitaxial growth and characterization of GaAs/Al/GaAs heterostructures (1990) (8)
- Monte Carlo calculation of electron relaxation times in perfect and disordered quantum wire laser structures (1993) (8)
- Role of resonant laser enhanced surface kinetics in the low substrate temperature molecular beam epitaxial growth of compound semiconductors: A Monte Carlo study (1985) (7)
- Molecular beam epitaxial growth and luminescence of InxGa1−xAs/InxAl1−xAs multiquantum wells on GaAs (1987) (7)
- Adatom migration effects during molecular beam epitaxial growth of InGaAs/GaAs quantum wells on patterned substrates with vertical sidewalls: Blue shift in luminescence spectra (1996) (7)
- Strain Induced Band Structure Modifications in Semiconductor Heterostructures and Consequences for Electronic and Optical Devices (1991) (6)
- A model for high‐field transport in alloys: Application to In0.53Ga0.47As (1985) (6)
- Coherent tunneling of mixed state hole wave packets in coupled quantum well structures (1991) (6)
- Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature (1996) (6)
- Steady‐state performance of microcavity surface‐emitting lasers with quantum confinement of electrons and photons (1994) (5)
- Dependence of pseudomorphic semiconductor band gap on substrate orientation (1991) (5)
- Asymmetric interface roughness in semiconductors grown by molecular‐beam epitaxy (1987) (5)
- Theory of photoluminescence in quantum wells in the presence of transverse electric field: Monte Carlo approach (1986) (5)
- Effect of the lifting of Kramer's degeneracy on excitonic linewidths in quantum well optical modulators (1988) (5)
- Issues in molecular‐beam epitaxy kinetics of compound semiconductor based heterostructures (1988) (5)
- Mid-IR HgCdTe double heterostructure lasers (1992) (5)
- Summary Abstract: Theoretical studies of alloy clustering and interface roughness in InAs, GaAs, and AlAs based heterostructures grown by molecular beam epitaxy (1986) (5)
- Impurity scattering effects on electron transport in short GaAs channels (1985) (5)
- Polarization dependence of the absorption coefficient for an array of strained quantum wires (1995) (4)
- Tunneling and subband levels in GaAs quantum well with direct and indirect AlxGa1−xAs barriers (1991) (4)
- Channel effective mass and interfacial effects in Si and SiGe metal-oxide- semiconductor field effect transistor: A charge control model study (1998) (4)
- Electronic properties of pseudomorphic {InGaAs}/{AlGaAs} (on GaAs) and {InGaAs}/{InAlAs} (on InP) Modfet structures (1988) (4)
- Anisotropic high-field diffusion of holes in silicon (1995) (4)
- Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption (2008) (4)
- A self‐consistent approach to spectral hole burning in quantum wire lasers (1993) (3)
- Laser cavity mirror imperfections and reflectivity: A time‐dependent numerical approach (1995) (3)
- Characterization of high‐quality pseudomorphic InGaAs/GaAs quantum wells by luminescence and reflectance techniques (1992) (3)
- Large blueshift in the photoluminescence of pseudomorphic InGaAs/GaAs quantum wells grown in patterned (100) GaAs grooves and ridges with vertical sidewalls (1996) (3)
- Effect of coherent strain on hydrogenic acceptor levels in InyGa1−yAs/AlxGa1−xAs quantum well structures (1990) (3)
- Effects of non‐uniform charge injection on gain, threshold current, and linewidth enhancement factor for a 1.55 μm InP‐based multiple quantum well laser (1996) (3)
- Implementation of neural networks using quantum well based excitonic devices-device requirement studies (1988) (3)
- Study of ferroelectric-thin-film thickness effects on metal-ferroelectric-SiO2–Si transistors (2002) (3)
- Spectral linewidth in microcavity surface‐emitting lasers (1994) (3)
- High power laser semiconductor interactions: A Monte Carlo study for silicon (1997) (3)
- Growth phenomena and characteristics of strained InxGa1-xAs on GaAs (1989) (3)
- AlGaN/GaN Heterostructure Transit-Time Devices: A Novel Device Concept for Submillimeter-Wave Sources (2005) (3)
- Lateral and Vertical Charge Transport in Polar Nitride Heterostructures (2008) (3)
- Field Effect Transistors: MOSFET (2008) (3)
- Quantum Mechanics (1996) (2)
- Negative differential resistance of GaAs/Al/sub x/Ga/sub 1-x/As multiquantum well structures under high power photoexcitation: structure optimisation for an oscillator (1992) (2)
- Electro-optic effect in strained and lattice matched multiquantum well structures-role of excitonic resonances (1990) (2)
- Structural Properties of Semiconductors (2008) (2)
- Acceptor level energies as a probe for the effect of strain on valence band structure in molecular‐beam epitaxy grown strained semiconductors (1992) (2)
- Summary Abstract: Optical properties of AlxGa1−xAs grown by molecular beam epitaxy (1986) (2)
- Optoelectronic properties of (001) and (111) lattice-matched and strained quantum wire lasers—comparison with quantum well lasers (1994) (2)
- Formation of misfit and threading dislocations in molecular‐beam epitaxy grown strained layer epitaxy: Role of growth modes (1987) (2)
- Electronic and Optoelectronic Properties of Semiconductor Structures: INTRODUCTION (2003) (2)
- Dynamic instabilities in the power spectrum of deeply modulated semiconductor lasers (1994) (2)
- Electronic and Optoelectronic Properties of Semiconductor Structures: OPTICAL PROPERTIES OF SEMICONDUCTORS (2003) (2)
- Growth and characterization of GaAs/Al/GaAs heterostructures (1990) (2)
- Electronic levels in semiconductors (2008) (2)
- Appendix A: Fermi Golden Rule (2007) (2)
- Use of Kubo formalism to study transport beyond the Born approximation: Application to low-temperature transport in Si metal–oxide–semiconductor field-effect transistors (1998) (2)
- Comparison of mode suppression and large signal modulation between lattice matched and strained InGaAs/AlGaAs quantum well lasers (1991) (2)
- Electron intersubband energy level spacing in self-organized In0.4Ga0.6As/GaAs quantum dot lasers from temperature-dependent modulation measurements (1999) (2)
- Importance of Electron-Hole Scattering for Hot Carrier Relaxation in Low Dimensional Quatum Stuctures (1996) (1)
- Appendix B: Important Mathematical Functions (2007) (1)
- Electronic and Optoelectronic Properties of Semiconductor Structures: VELOCITY-FIELD RELATIONS IN SEMICONDUCTORS (2003) (1)
- Two-Dimensional Pattern Matching And Associative Memory Using A Simple Optoelectronic Architecture (1990) (1)
- The Engineering Of Optical Absorption Coefficients In Strained Multiquantum Well Systems (1988) (1)
- Optoelectronic Device Applications of Self-Organized In(Ga,Al)As/Ga(Al)As Quantum Dots (2000) (1)
- Carrier relaxation in quantum wires: consequences for quantum wire laser performance (1994) (1)
- Hot hole relaxation in the SiGe system (1996) (1)
- The effect of strain on hot‐electron and hole longitudinal diffusion and noise in Si and Si0.9Ge0.1 (1995) (1)
- Electronic and Optoelectronic Properties of Semiconductor Structures: DEFECT AND CARRIER–CARRIER SCATTERING (2003) (1)
- Design of composite channels for optimized transport in nitride devices (2003) (1)
- Role of interface roughness on lateral transport in InGaN/GaN LEDs: diffusion length, dislocation spacing, and radiative efficiency (2010) (1)
- Theoretical optimization of quantum wire array lasers for low threshold current density and high modulation frequency (1993) (1)
- Room temperature intra-band lasing in quantum dot arrays placed in high photon density cavities—a theoretical study (1996) (1)
- Photocurrent and intrinsic modulation speeds in P-I(MQW)-N GaAs/AlGaAs stark effect modulators (1990) (1)
- The Mathematical Formulation of Quantum Mechanics (2007) (1)
- Consequences of Strain and Growth Kinetics on Growth Modes and Dislocation Formation in Strained Layer Epitaxy (1990) (1)
- Role of strain on threshold current, modal purity and Auger processes in strained quantum well lasers (1990) (1)
- Electric‐field dependence of acceptor‐level binding energies in strained SiGe and InGaAs quantum‐well structures (1992) (1)
- Velocity Overshoot Effects and Scaling Issues (2005) (1)
- Anisotropic high‐field transverse differential mobility of holes in silicon (1995) (1)
- Charge transport in materials (2008) (1)
- STARK-EFFECT IN QUANTUM WELLS - RAMAN-SCATTERING BY INTERSUBBAND TRANSITIONS (1987) (1)
- A Theoretical Study of Self Assembled InAs/GaAs and InAs/GaP/GaAs Quantum Dots: Effects of Strain Balancing (2002) (1)
- Junctions in Semiconductors: P-N Diodes (2008) (1)
- Free carrier absorption as a probe of carrier dynamics: A Monte Carlo based study for silicon (1997) (1)
- The use of Kubo formula to examine low temperature transport limited by interface roughness and phonons in metal–oxide–semiconductor field effect transistors (1999) (0)
- Valley selective tunneling transistor based on valley discontinuities in AlGaAs heterostructures (1989) (0)
- Smart Electronic Materials: DEFECT SCATTERING AND MOBILITY (2005) (0)
- Time‐dependent formalism for interband tunneling application to the InxGa1−xAs system (1993) (0)
- A Study of Photocurrent in Multiquantum Well Optical Modulators: Application to All-Optical Device (1988) (0)
- Optoelectronic MQW Devices and Systems for Application in Optically Controlled Millimeter-Wave Oscillators. (1996) (0)
- Numerical simulation of the dynamic response of self-assembled In 0.4Ga0.6As/GaAs quantum dot lasers (1998) (0)
- Smart Electronic Materials: Titles in the series (2005) (0)
- roposal for a High-speed Ino.52Alo.48As/Ino.53Gao.47A~ MODFET with an aAs), Superlattice Channel (1986) (0)
- Nonrandom alloying in Ino . 52 Aloo 4 sAsllnP grown by molecular beam epitaxy (2001) (0)
- Smart Electronic Materials: PREFACE (2005) (0)
- Tunneling of Particles (2007) (0)
- Smart Electronic Materials: STRUCTURAL PROPERTIES (2005) (0)
- A Low-power High Gain Optoelectronic Switch based on Quantum Stark Effect and its use in logic operations (1992) (0)
- Electronic and Optoelectronic Properties of Semiconductor Structures: BANDSTRUCTURE MODIFICATIONS (2003) (0)
- Carrier dynamics in In(Ga)As/Ga(Al)As self-organized quantum dots (2002) (0)
- Electronic and Optoelectronic Properties of Semiconductor Structures: SEMICONDUCTORS IN MAGNETIC FIELDS (2003) (0)
- Scattering and Collisions (2007) (0)
- Particles that Make up our World (2007) (0)
- Modeling of Junction Temperature and Current Flow in High Power InGaN/GaN Light Emission Diodes Using Finite Element Methods (2009) (0)
- Strained semiconductors and heterostructures: synthesis and applications (1991) (0)
- Theory of lateral bandgap variation achievable by strain engineering in patterned substrate strain epitaxy (1990) (0)
- Interface roughness, Localization and Radiative Efficiency in InGaN/GaN light emitters (2001) (0)
- Appendix C: Density Matrix Description (2007) (0)
- Smart Electronic Materials: IMPORTANT PROPERTIES OF SEMICONDUCTORS (2005) (0)
- GaAs/AlGaAs based multiquantum well device for learning and decision making in optical neuro-computers (1990) (0)
- Identical Particles and Second Quantization (2007) (0)
- Electronic and Optoelectronic Properties of Semiconductor Structures: IMPORTANT PROPERTIES OF SEMICONDUCTORS (2003) (0)
- A high-speed multiquantum well-based optical header reader for fiber network packet switching (1994) (0)
- Monte Carlo study of noise scaling in AlGaN / GaN HFETs (2005) (0)
- Particles in Attractive Potentials (2007) (0)
- A Theoretical Study of Structural Disorder and Photoluminescence Linewidth in InGaAs/GaAs Self Assembled Quantum Dots (2001) (0)
- As ( on GaAs substrates ) and InO . S 3 + XGa 0 . 47 _ xAs ( on InP substrates ) modulation . . doped field . . effect transistors (2001) (0)
- The Comparative Study of the Electro-optic Effects in the GaAs/AlGaAs and InGaAs/InAlAs Systems (1987) (0)
- Ferroelectric charge injection mosfet devices (2001) (0)
- P–N DIODE: A SUMMARY (2005) (0)
- Epitaxial Growth and Characterization of Si(1-x)Ge(x) Materials and Devices (1997) (0)
- Temporal Response Of Diodes and Bipolar Transistors (2008) (0)
- COHERENCE, DISORDER, AND MESOSCOPIC SYSTEMS (2003) (0)
- Bipolar Junction Transistors (2008) (0)
- Monte Carlo studies of two dimensional transport in GaN Õ AlGaN transistors : Comparison with transport in AlGaAs Õ GaAs channels (2000) (0)
- The Tunneling Problem (2007) (0)
- Effect of strain on Auger processes in GaAs and InP based quantum well-lasers - applications for improved threshold current and time response (1991) (0)
- ARSORPTION AND PHOTOLUMINESCENCE STUDIES OF THE TEMPERATURE DEPENDI:N(~'E ()I< ESCITON LIFE TIME IN I,ATTICE-MATCHED AND STRAWED QUANTW WELL S1'S'I'F:SIS (1987) (0)
- TRANSPORT: GENERAL FORMALISM (2003) (0)
- Smart Electronic Materials: MAGNETIC EFFECTS IN SOLIDS (2005) (0)
- Piezoelectric and Spontaneous Polarization Effects in Nitride Heterostructure Optoelectronics (1999) (0)
- Far .. inirared absorption spectra measured in InAsl Al o . ss Ga O • 64 Sb quantum wens (1990) (0)
- How does phonon generation influence AlGaN/GaN HFETs?- Transient and steady state studies (2006) (0)
- Tailoring of hole band structure using biaxial strain for low-threshold, high modal purity multiquantum-well lasers (1990) (0)
- Smart Electronic Materials: FERMI GOLDEN RULE (2005) (0)
- Particles in Periodic Potentials (2007) (0)
- Electronic and Optoelectronic Properties of Semiconductor Structures: STRUCTURAL PROPERTIES OF SEMICONDUCTORS (2003) (0)
- Wavelength selective detection using excitonic resonances in GaAs/AlGaAs P-I-(MQW)-N structures (1990) (0)
- A Jolt for Classical Physics (2007) (0)
- Theoretical study on optimum barrier height of GaAs/AlxGa1−xAs multiple quantum well modulator: Inhomogeneous broadening effects (1993) (0)
- Integrated MQW HBT Optical Switching and Thresholding Applications (1990) (0)
- Temperature invariance of quantum well modulators using a feedback circuit based on quantum confined stark effect (1992) (0)
- Summary Abstract: A comparative study of photovoltaic and photoluminescence spectra of undoped GaAs–Al0.25Ga0.75As multiple quantum well structures grown by molecular beam epitaxy (1986) (0)
- Semiconductor microcavity light-emitting structures (1995) (0)
- Approximation Methods: Time‐Independent Problems (2007) (0)
- Quantum Mechanics and the Universe (2007) (0)
- Appendix B: Boltzmann Transport Theory (2007) (0)
- Polarization dependent inter-subband transitions in n-type InGaAs/GaAs and p-type SiGe/Ge self assembled dots: theoretical studies (2003) (0)
- Quantum Transport of an Electron Wave Packet Across a Heterostructure Discontinuity: Applications in the GaAs/Al sub x Ga sub 1-xAs Heterosystem, (1992) (0)
- Appendix A: Modern Classical Physics: A Review (2007) (0)
- Coherent Transport and Mesoscopic Devices (2008) (0)
- Collisions and Scattering (2007) (0)
- Carrier relaxation in quantum well, quantum wire and quantum dot laser structures: consequences for gain compression and high-speed performance (1994) (0)
- Electronic and Optoelectronic Properties of Semiconductor Structures: LATTICE VIBRATIONS: PHONON SCATTERING (2003) (0)
- Electronic and Optoelectronic Properties of Semiconductor Structures: SEMICONDUCTOR BANDSTRUCTURE (2003) (0)
- Electronic and Optoelectronic Properties of Semiconductor Structures: EXCITONIC EFFECTS AND MODULATION OF OPTICAL PROPERTIES (2003) (0)
- Multispectral InGaAs/GaAs/AlGaAs laser arrays by MBE growth on patterned substrates (1997) (0)
- Classical View of the Universe (2007) (0)
- STRAIN IN SEMICONDUCTORS (2003) (0)
- Temperature-dependent transparency conditions and spatial degeneracy in self-organized quantum dots (2003) (0)
- Smart Electronic Materials: LATTICE VIBRATIONS AND PHONONS (2005) (0)
- Smart Electronic Materials: ELECTRONIC LEVELS IN SOLIDS (2005) (0)
- Theoretical and experimental studies on large-bandwidth 1.55-μm integrated InP-based strained MQW laser-modulators (1997) (0)
- Particles in Simple Potentials (2007) (0)
- Lasers for large modulation bandwidth and low-threshold applications (1994) (0)
- Physical Symmetries and Conservation Laws (2007) (0)
- Smart Electronic Materials: CHARGE TRANSPORT IN MATERIALS (2005) (0)
- A Study of Charge Control and Gate Tunneling in a Ferroelectric-Oxide-Silicon Field Effect Transistor (2001) (0)
- In-Situ RHEED Studies To Understand The Dislocation Formation Process In Growth Of InGaAs on GaAs (1988) (0)
- Theoretical studies of impact ionisation in pseudomorphic structures of InGaAlAs on GaAs and InP substrates (1991) (0)
- Smart Electronic Materials: INTRODUCTION (2005) (0)
- Smart Electronic Materials: QUANTUM MECHANICS AND ELECTRONIC LEVELS (2005) (0)
- Appendix C: Quantum Interference Devices (2007) (0)
- Long-wavelength In(Ga)As/GaAs quantum dot electroluminescent devices (2001) (0)
- Special Theory of Relativity (2007) (0)
- Smart Electronic Materials: OPTICAL MODULATION AND SWITCHING (2005) (0)
- FY9l AASERT III-V Modulation and Switching Devices for Optical Systems Applications. (1991) (0)
- Time‐Dependent Problems: Approximation Methods (2007) (0)
- Smart Electronic Materials: DIELECTRIC RESPONSE: POLARIZATION EFFECTS (2005) (0)
- Quantum Transport of an Electron Wavepacket across a Heterostructure Discontinuity – Applications in the GaAs/AlGaAs Heterostructure (1991) (0)
- Electric field effects on intersubband transitions in quantum well structures (1987) (0)
- Particles in Spherically Symmetric Potentials (2007) (0)
- Quantum-well excitonic devices for optical computing (1991) (0)
- Electronic and Optoelectronic Properties of Semiconductor Structures: QUANTUM MECHANICS: USEFUL CONCEPTS (2003) (0)
- Smart Electronic Materials: LIGHT ABSORPTION AND EMISSION (2005) (0)
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