Jasprit Singh

Jasprit Singh's AcademicInfluence.com Rankings

Jasprit Singh

Physics

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Physics

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Jasprit Singh's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Physics of Semiconductors and Their Heterostructures (1992) (577)
Electronic and Optoelectronic Properties of Semiconductor Structures (2007) (353)
Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study (1997) (290)
Role of strain and growth conditions on the growth front profile of InxGa1−xAs on GaAs during the pseudomorphic growth regime (1988) (223)
Semiconductor Device Physics and Design (2007) (191)
Semiconductor Devices: Basic Principles (2000) (176)
Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers (2003) (175)
Role of interface roughness and alloy disorder in photoluminescence in quantum‐well structures (1985) (174)
Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor (1999) (174)
Theory of photoluminescence line shape due to interfacial quality in quantum well structures (1984) (134)
Semiconductor Optoelectronics: Physics and Technology (1995) (128)
Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting (2009) (112)
Evidence for spin splitting in InxGa1-xAs/In0.52Al0.48As heterostructures as B0 (1989) (111)
Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies (2000) (99)
Optoelectronics: An Introduction to Materials and Devices (1996) (86)
Semiconductor Devices: An Introduction. (1994) (80)
Comparison of the k⋅p and direct diagonalization approaches to the electronic structure of InAs/GaAs quantum dots (2000) (77)
Influence of disorder on the electronic structure of amorphous silicon (1981) (76)
p‐type arsenic doping of CdTe and HgTe/CdTe superlattices grown by photoassisted and conventional molecular‐beam epitaxy (1990) (66)
Band structure and charge control studies of n‐ and p‐type pseudomorphic modulation‐doped field‐effect transistors (1989) (61)
Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxy (1987) (59)
Quantum mechanical theory of linewidths of localized radiative transitions in semiconductor alloys (1986) (55)
Role of kinetics and thermodynamics in alloy clustering and surface quality in InAlAs grown by molecular‐beam epitaxy: Consequences for optical and transport properties (1986) (55)
Nonequilibrium distribution in quantum dots lasers and influence on laser spectral output (1999) (54)
Effect of spectral broadening and electron‐hole scattering on carrier relaxation in GaAs quantum dots (1994) (53)
Transient study of self-heating effects in AlGaN/GaN HFETs: Consequence of carrier velocities, temperature, and device performance (2007) (52)
Determination of interfacial quality of GaAs-GaAlAs multi-quantum well structures using photoluminescence spectroscopy (1985) (51)
Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors (2004) (49)
Quantum Mechanics: Fundamentals and Applications to Technology (1996) (48)
Gate Leakage Suppression and Contact Engineering in Nitride Heterostructures (2003) (47)
Design of high electron mobility devices with composite nitride channels (2003) (45)
Coupled GaAs/AlGaAs quantum-well electroabsorption modulators for low-electric-field optical modulation (1989) (45)
Observation of Phonon Bottleneck in Quantum Dot Electronic Relaxation (2001) (44)
Theoretical investigations of the nature of the normal and inverted GaAs–AlGaAs structures grown by molecular beam epitaxy (1984) (42)
Examination of tunnel junctions in the AlGaN/GaN system: Consequences of polarization charge (2000) (42)
Theoretical studies of the intrinsic quality of GaAs/AlGaAs interfaces grown by MBE: Role of kinetic processes (1985) (41)
Calculation of electron and hole impact ionization coefficients in SiGe alloys (1996) (39)
Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs (2014) (38)
Determination of the microscopic quality of InGaAs‐InAlAs interfaces by photoluminescence—Role of interrupted molecular beam epitaxial growth (1986) (38)
A new method for solving the ground‐state problem in arbitrary quantum wells: Application to electron‐hole quasi‐bound levels in quantum wells under high electric field (1986) (37)
Absorption and photoluminescence studies of the temperature dependence of exciton life time in lattice-matched and strained quantum well systems (1987) (37)
Monte Carlo studies of ohmic hole mobility in silicon and germanium: Examination of the optical phonon deformation potential (1994) (35)
Carrier velocity-field characteristics and alloy scattering potential in Si1-xGex/Si (1993) (35)
Field‐dependent linewidths and photoluminescence energies in GaAs‐AlGaAs multiquantum well modulators (1986) (35)
Comparative study of the growth processes of GaAs, AlGaAs, InGaAs, and InAlAs lattice matched and nonlattice matched semiconductors using high‐energy electron diffraction (1987) (34)
A study of strain‐related effects in the molecular‐beam epitaxy growth of InxGa1−xAs on GaAs using reflection high‐energy electron diffraction (1987) (31)
The effect of inhibited growth kinetics on GaInAs and AlInAs alloy and interface quality (1989) (30)
Enhancement in excitonic absorption due to overlap in heavy‐hole and light‐hole excitons in GaAs/InAlGaAs quantum well structures (1987) (28)
Surface orientation dependent surface kinetics and interface roughening in molecular beam epitaxial growth of III–V semiconductors: A Monte Carlo study (1983) (28)
A study of novel growth approaches to influence the growth mechanism and interface quality in heterostructures grown by molecular beam epitaxy (1986) (27)
Theoretical study of GaN growth: A Monte Carlo approach (1994) (27)
Summary Abstract: Material properties and clustering in molecular‐beam epitaxial In0.52Al0.48As and In1−x−yGaxAlyAs (1987) (26)
Role of numerical simulations in the semiconductor heterostructure technology using molecular beam epitaxy (1986) (26)
Excitonic photoluminescence linewidths in AlGaAs grown by molecular beam epitaxy (1986) (24)
In‐plane hole effective masses in InxGa1−xAs/Al0.15Ga0.85As modulation‐doped heterostructures (1989) (24)
The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−x As/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes (1990) (24)
Self-assembled quantum dots: A study of strain energy and intersubband transitions (2002) (23)
Conduction band spectra in self-assembled InAs/GaAs dots: A comparison of effective mass and an eight-band approach (1997) (23)
Linear electro-optic effect due to the built-in electric field in InGaN/GaN quantum wells (1999) (23)
Capacitance‐voltage measurements in amorphous Schottky barriers (1980) (22)
Radiative and non-radiative inter-subband transition in self assembled quantum dots (1998) (22)
Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x>0.53) HEMTs (1989) (21)
Study of excitons in an arbitrarily shaped GaAs/Al0.3Ga0.7As single quantum well in the presence of static transverse electric field (1987) (20)
A study of the role of dislocation density, indium composition on the radiative efficiency in InGaN/GaN polar and nonpolar light-emitting diodes using drift-diffusion coupled with a Monte Carlo method (2010) (20)
System requirements and feasibility studies for optical modulators based on GaAs/AlGaAs multiquantum well structures for optical processing (1988) (20)
Examination of LiNbO3/nitride heterostructures (2003) (19)
Study of the low‐temperature line broadening mechanisms for excitonic transitions in GaAs/AlGaAs modulator structures (1986) (19)
Intersubband absorption in annealed InAs/GaAs quantum dots: a case for polarization-sensitive infrared detection (2003) (19)
Monte Carlo studies on the well‐width dependence of carrier capture time in graded‐index separate confinement heterostructure quantum well laser structures (1993) (18)
Role of arsenic (As2, As) in controlling the quality of GaAs grown by MBE: Theoretical studies (1984) (18)
Theoretical investigation of hole transport in strained III‐V semiconductors: Application to GaAs (1988) (18)
Suppression of defect propagation in semiconductors by pseudomorphic layers (1993) (18)
Strain tensor and electron and hole spectra in self-assembled InGaAs/GaAs and SiGe/Si quantum dots (1998) (17)
Variation of Hg incorporation in molecular‐beam epitaxially grown HgCdTe structures due to growth front roughness and misoriented substrates: Role of kink sites (1989) (17)
Theoretical study on threshold energy and impact ionization coefficient for electrons in Si1−xGex (1994) (17)
Determination of microscopic structural quality of molecular beam epitaxial grown GaAs/AlGaAs interface by high‐resolution photoluminescence spectroscopy (1985) (17)
Effect of structural disorder on electronic states in GaAs/AlGaAs quantum wires (1991) (16)
Theoretical formalism to understand the role of strain in the tailoring of hole masses in p‐type InxGa1−xAs (on GaAs substrates) and In0.53+xGa0.47−xAs (on InP substrates) modulation‐doped field‐effect transistors (1987) (16)
Theory of polarization dependent intersubband transitions in p-type SiGe/Si self-assembled quantum dots (2004) (16)
Inclusion of spin-orbit coupling into tight binding bandstructure calculations for bulk and superlattice semiconductors (1987) (15)
Modern physics for engineers (1999) (15)
Current–voltage characteristics of polar heterostructure junctions (2002) (15)
Effect of image charges in the drain delay of AlGaN∕GaN high electron mobility transistors (2008) (15)
Realization of in-situ sub two-dimensional quantum structures by strained layer growth phenomena in the InxGa1- xAs/GaAs system (1996) (15)
Direct measurement of the Hall factor for holes in relaxed Si1−xGex (0 (1994) (15)
Prediction of kinetically controlled surface roughening: A Monte Carlo computer-simulation study (1983) (14)
Refractive index and electro‐optic effect in compressive and tensile strained quantum wells (1991) (14)
Study of charge control and gate tunneling in a ferroelectric-oxide-silicon field effect transistor: Comparison with a conventional metal-oxide-silicon structure (2001) (13)
Initial stages of GaN/GaAs(100) growth by metalorganic chemical vapor deposition (1996) (13)
High-resolution photoluminescence studies of GaAs/GaAlAs multi-quantum-well structures grown by molecular beam epitaxy (1986) (13)
Low temperature silicon epitaxy using supersonic molecular beams (1995) (13)
Role of thin multiquantum wells in controlling intrinsic interface quality in molecular beam epitaxially grown heterostructures (1985) (13)
Use of cation‐stabilized conditions to improve compatibility of CdTe and HgTe molecular beam epitaxy (1989) (12)
Polarization effects and transport in AlGaN/GaN system (2000) (12)
Growth and properties of In0.52Al0.48As/In0.53Ga0.47As, GaAS: In and InGaAs/GaAs multilayers (1987) (11)
Low‐temperature photoluminescence in AlxGa1−xAs grown by molecular beam epitaxy (1985) (11)
Laser induced impact ionization in semiconductors: A Monte Carlo study for silicon (1996) (11)
Spatial and spectral characteristics of spontaneous emission from semiconductor quantum wells in microscopic cylindrical cavities (1995) (10)
Electron and hole impact ionization coefficients in GaAs/Al0.45Ga0.55As/Al0.3Ga0.7As coupled well systems (1991) (10)
Reduction of Be out‐diffusion from heavily doped GaAs:Be layers by pseudomorphic InxGa1−xAs barrier layers (1994) (9)
Role of bias conditions in the hot carrier degradation of AlGaN/GaN high electron mobility transistors (2013) (9)
Photovoltaic spectra of undoped GaAsAl0.25Ga0.75As multiple quantum well structures: Correlation with photoluminescence (1986) (9)
Monte Carlo studies of two dimensional transport in GaN/AlGaN transistors: Comparison with transport in AlGaAs/GaAs channels (2001) (9)
Studies of carrier relaxation in low dimensional structures (1996) (9)
Smart Electronic Materials: Contents (2005) (9)
The tailoring of impact ionization phenomenon using pseudomorphic structures-applications to InGaAlAs on GaAs and InP substrates (1992) (9)
Strained layer epitaxy of InGaAs by MBE and migration enhanced epitaxy — comparison of growth modes and surface quality (1991) (8)
Study of carrier dynamics and radiative efficiency in InGaN/GaN LEDs with Monte Carlo method (2011) (8)
Theoretical studies of polarization dependent electro-optical modulation in lattice matched and strained multi-quantum well structures (1987) (8)
Field Effect Transistors (2008) (8)
Smart Electronic Materials: Fundamentals and Applications (2005) (8)
Analytical closed form expressions for the effective band edges in shallow quantum wells (1994) (8)
Optimum separate confinement structure for midinfrared HgCdTe heterostructure lasers (1992) (8)
Epitaxial growth and characterization of GaAs/Al/GaAs heterostructures (1990) (8)
Monte Carlo calculation of electron relaxation times in perfect and disordered quantum wire laser structures (1993) (8)
Role of resonant laser enhanced surface kinetics in the low substrate temperature molecular beam epitaxial growth of compound semiconductors: A Monte Carlo study (1985) (7)
Molecular beam epitaxial growth and luminescence of InxGa1−xAs/InxAl1−xAs multiquantum wells on GaAs (1987) (7)
Adatom migration effects during molecular beam epitaxial growth of InGaAs/GaAs quantum wells on patterned substrates with vertical sidewalls: Blue shift in luminescence spectra (1996) (7)
Strain Induced Band Structure Modifications in Semiconductor Heterostructures and Consequences for Electronic and Optical Devices (1991) (6)
A model for high‐field transport in alloys: Application to In0.53Ga0.47As (1985) (6)
Coherent tunneling of mixed state hole wave packets in coupled quantum well structures (1991) (6)
Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature (1996) (6)
Steady‐state performance of microcavity surface‐emitting lasers with quantum confinement of electrons and photons (1994) (5)
Dependence of pseudomorphic semiconductor band gap on substrate orientation (1991) (5)
Asymmetric interface roughness in semiconductors grown by molecular‐beam epitaxy (1987) (5)
Theory of photoluminescence in quantum wells in the presence of transverse electric field: Monte Carlo approach (1986) (5)
Effect of the lifting of Kramer's degeneracy on excitonic linewidths in quantum well optical modulators (1988) (5)
Issues in molecular‐beam epitaxy kinetics of compound semiconductor based heterostructures (1988) (5)
Mid-IR HgCdTe double heterostructure lasers (1992) (5)
Summary Abstract: Theoretical studies of alloy clustering and interface roughness in InAs, GaAs, and AlAs based heterostructures grown by molecular beam epitaxy (1986) (5)
Impurity scattering effects on electron transport in short GaAs channels (1985) (5)
Polarization dependence of the absorption coefficient for an array of strained quantum wires (1995) (4)
Tunneling and subband levels in GaAs quantum well with direct and indirect AlxGa1−xAs barriers (1991) (4)
Channel effective mass and interfacial effects in Si and SiGe metal-oxide- semiconductor field effect transistor: A charge control model study (1998) (4)
Electronic properties of pseudomorphic {InGaAs}/{AlGaAs} (on GaAs) and {InGaAs}/{InAlAs} (on InP) Modfet structures (1988) (4)
Anisotropic high-field diffusion of holes in silicon (1995) (4)
Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption (2008) (4)
A self‐consistent approach to spectral hole burning in quantum wire lasers (1993) (3)
Laser cavity mirror imperfections and reflectivity: A time‐dependent numerical approach (1995) (3)
Characterization of high‐quality pseudomorphic InGaAs/GaAs quantum wells by luminescence and reflectance techniques (1992) (3)
Large blueshift in the photoluminescence of pseudomorphic InGaAs/GaAs quantum wells grown in patterned (100) GaAs grooves and ridges with vertical sidewalls (1996) (3)
Effect of coherent strain on hydrogenic acceptor levels in InyGa1−yAs/AlxGa1−xAs quantum well structures (1990) (3)
Effects of non‐uniform charge injection on gain, threshold current, and linewidth enhancement factor for a 1.55 μm InP‐based multiple quantum well laser (1996) (3)
Implementation of neural networks using quantum well based excitonic devices-device requirement studies (1988) (3)
Study of ferroelectric-thin-film thickness effects on metal-ferroelectric-SiO2–Si transistors (2002) (3)
Spectral linewidth in microcavity surface‐emitting lasers (1994) (3)
High power laser semiconductor interactions: A Monte Carlo study for silicon (1997) (3)
Growth phenomena and characteristics of strained InxGa1-xAs on GaAs (1989) (3)
AlGaN/GaN Heterostructure Transit-Time Devices: A Novel Device Concept for Submillimeter-Wave Sources (2005) (3)
Lateral and Vertical Charge Transport in Polar Nitride Heterostructures (2008) (3)
Field Effect Transistors: MOSFET (2008) (3)
Quantum Mechanics (1996) (2)
Negative differential resistance of GaAs/Al/sub x/Ga/sub 1-x/As multiquantum well structures under high power photoexcitation: structure optimisation for an oscillator (1992) (2)
Electro-optic effect in strained and lattice matched multiquantum well structures-role of excitonic resonances (1990) (2)
Structural Properties of Semiconductors (2008) (2)
Acceptor level energies as a probe for the effect of strain on valence band structure in molecular‐beam epitaxy grown strained semiconductors (1992) (2)
Summary Abstract: Optical properties of AlxGa1−xAs grown by molecular beam epitaxy (1986) (2)
Optoelectronic properties of (001) and (111) lattice-matched and strained quantum wire lasers—comparison with quantum well lasers (1994) (2)
Formation of misfit and threading dislocations in molecular‐beam epitaxy grown strained layer epitaxy: Role of growth modes (1987) (2)
Electronic and Optoelectronic Properties of Semiconductor Structures: INTRODUCTION (2003) (2)
Dynamic instabilities in the power spectrum of deeply modulated semiconductor lasers (1994) (2)
Electronic and Optoelectronic Properties of Semiconductor Structures: OPTICAL PROPERTIES OF SEMICONDUCTORS (2003) (2)
Growth and characterization of GaAs/Al/GaAs heterostructures (1990) (2)
Electronic levels in semiconductors (2008) (2)
Appendix A: Fermi Golden Rule (2007) (2)
Use of Kubo formalism to study transport beyond the Born approximation: Application to low-temperature transport in Si metal–oxide–semiconductor field-effect transistors (1998) (2)
Comparison of mode suppression and large signal modulation between lattice matched and strained InGaAs/AlGaAs quantum well lasers (1991) (2)
Electron intersubband energy level spacing in self-organized In0.4Ga0.6As/GaAs quantum dot lasers from temperature-dependent modulation measurements (1999) (2)
Importance of Electron-Hole Scattering for Hot Carrier Relaxation in Low Dimensional Quatum Stuctures (1996) (1)
Appendix B: Important Mathematical Functions (2007) (1)
Electronic and Optoelectronic Properties of Semiconductor Structures: VELOCITY-FIELD RELATIONS IN SEMICONDUCTORS (2003) (1)
Two-Dimensional Pattern Matching And Associative Memory Using A Simple Optoelectronic Architecture (1990) (1)
The Engineering Of Optical Absorption Coefficients In Strained Multiquantum Well Systems (1988) (1)
Optoelectronic Device Applications of Self-Organized In(Ga,Al)As/Ga(Al)As Quantum Dots (2000) (1)
Carrier relaxation in quantum wires: consequences for quantum wire laser performance (1994) (1)
Hot hole relaxation in the SiGe system (1996) (1)
The effect of strain on hot‐electron and hole longitudinal diffusion and noise in Si and Si0.9Ge0.1 (1995) (1)
Electronic and Optoelectronic Properties of Semiconductor Structures: DEFECT AND CARRIER–CARRIER SCATTERING (2003) (1)
Design of composite channels for optimized transport in nitride devices (2003) (1)
Role of interface roughness on lateral transport in InGaN/GaN LEDs: diffusion length, dislocation spacing, and radiative efficiency (2010) (1)
Theoretical optimization of quantum wire array lasers for low threshold current density and high modulation frequency (1993) (1)
Room temperature intra-band lasing in quantum dot arrays placed in high photon density cavities—a theoretical study (1996) (1)
Photocurrent and intrinsic modulation speeds in P-I(MQW)-N GaAs/AlGaAs stark effect modulators (1990) (1)
The Mathematical Formulation of Quantum Mechanics (2007) (1)
Consequences of Strain and Growth Kinetics on Growth Modes and Dislocation Formation in Strained Layer Epitaxy (1990) (1)
Role of strain on threshold current, modal purity and Auger processes in strained quantum well lasers (1990) (1)
Electric‐field dependence of acceptor‐level binding energies in strained SiGe and InGaAs quantum‐well structures (1992) (1)
Velocity Overshoot Effects and Scaling Issues (2005) (1)
Anisotropic high‐field transverse differential mobility of holes in silicon (1995) (1)
Charge transport in materials (2008) (1)
STARK-EFFECT IN QUANTUM WELLS - RAMAN-SCATTERING BY INTERSUBBAND TRANSITIONS (1987) (1)
A Theoretical Study of Self Assembled InAs/GaAs and InAs/GaP/GaAs Quantum Dots: Effects of Strain Balancing (2002) (1)
Junctions in Semiconductors: P-N Diodes (2008) (1)
Free carrier absorption as a probe of carrier dynamics: A Monte Carlo based study for silicon (1997) (1)
The use of Kubo formula to examine low temperature transport limited by interface roughness and phonons in metal–oxide–semiconductor field effect transistors (1999) (0)
Valley selective tunneling transistor based on valley discontinuities in AlGaAs heterostructures (1989) (0)
Smart Electronic Materials: DEFECT SCATTERING AND MOBILITY (2005) (0)
Time‐dependent formalism for interband tunneling application to the InxGa1−xAs system (1993) (0)
A Study of Photocurrent in Multiquantum Well Optical Modulators: Application to All-Optical Device (1988) (0)
Optoelectronic MQW Devices and Systems for Application in Optically Controlled Millimeter-Wave Oscillators. (1996) (0)
Numerical simulation of the dynamic response of self-assembled In 0.4Ga0.6As/GaAs quantum dot lasers (1998) (0)
Smart Electronic Materials: Titles in the series (2005) (0)
roposal for a High-speed Ino.52Alo.48As/Ino.53Gao.47A~ MODFET with an aAs), Superlattice Channel (1986) (0)
Nonrandom alloying in Ino . 52 Aloo 4 sAsllnP grown by molecular beam epitaxy (2001) (0)
Smart Electronic Materials: PREFACE (2005) (0)
Tunneling of Particles (2007) (0)
Smart Electronic Materials: STRUCTURAL PROPERTIES (2005) (0)
A Low-power High Gain Optoelectronic Switch based on Quantum Stark Effect and its use in logic operations (1992) (0)
Electronic and Optoelectronic Properties of Semiconductor Structures: BANDSTRUCTURE MODIFICATIONS (2003) (0)
Carrier dynamics in In(Ga)As/Ga(Al)As self-organized quantum dots (2002) (0)
Electronic and Optoelectronic Properties of Semiconductor Structures: SEMICONDUCTORS IN MAGNETIC FIELDS (2003) (0)
Scattering and Collisions (2007) (0)
Particles that Make up our World (2007) (0)
Modeling of Junction Temperature and Current Flow in High Power InGaN/GaN Light Emission Diodes Using Finite Element Methods (2009) (0)
Strained semiconductors and heterostructures: synthesis and applications (1991) (0)
Theory of lateral bandgap variation achievable by strain engineering in patterned substrate strain epitaxy (1990) (0)
Interface roughness, Localization and Radiative Efficiency in InGaN/GaN light emitters (2001) (0)
Appendix C: Density Matrix Description (2007) (0)
Smart Electronic Materials: IMPORTANT PROPERTIES OF SEMICONDUCTORS (2005) (0)
GaAs/AlGaAs based multiquantum well device for learning and decision making in optical neuro-computers (1990) (0)
Identical Particles and Second Quantization (2007) (0)
Electronic and Optoelectronic Properties of Semiconductor Structures: IMPORTANT PROPERTIES OF SEMICONDUCTORS (2003) (0)
A high-speed multiquantum well-based optical header reader for fiber network packet switching (1994) (0)
Monte Carlo study of noise scaling in AlGaN / GaN HFETs (2005) (0)
Particles in Attractive Potentials (2007) (0)
A Theoretical Study of Structural Disorder and Photoluminescence Linewidth in InGaAs/GaAs Self Assembled Quantum Dots (2001) (0)
As ( on GaAs substrates ) and InO . S 3 + XGa 0 . 47 _ xAs ( on InP substrates ) modulation . . doped field . . effect transistors (2001) (0)
The Comparative Study of the Electro-optic Effects in the GaAs/AlGaAs and InGaAs/InAlAs Systems (1987) (0)
Ferroelectric charge injection mosfet devices (2001) (0)
P–N DIODE: A SUMMARY (2005) (0)
Epitaxial Growth and Characterization of Si(1-x)Ge(x) Materials and Devices (1997) (0)
Temporal Response Of Diodes and Bipolar Transistors (2008) (0)
COHERENCE, DISORDER, AND MESOSCOPIC SYSTEMS (2003) (0)
Bipolar Junction Transistors (2008) (0)
Monte Carlo studies of two dimensional transport in GaN Õ AlGaN transistors : Comparison with transport in AlGaAs Õ GaAs channels (2000) (0)
The Tunneling Problem (2007) (0)
Effect of strain on Auger processes in GaAs and InP based quantum well-lasers - applications for improved threshold current and time response (1991) (0)
ARSORPTION AND PHOTOLUMINESCENCE STUDIES OF THE TEMPERATURE DEPENDI:N(~'E ()I< ESCITON LIFE TIME IN I,ATTICE-MATCHED AND STRAWED QUANTW WELL S1'S'I'F:SIS (1987) (0)
TRANSPORT: GENERAL FORMALISM (2003) (0)
Smart Electronic Materials: MAGNETIC EFFECTS IN SOLIDS (2005) (0)
Piezoelectric and Spontaneous Polarization Effects in Nitride Heterostructure Optoelectronics (1999) (0)
Far .. inirared absorption spectra measured in InAsl Al o . ss Ga O • 64 Sb quantum wens (1990) (0)
How does phonon generation influence AlGaN/GaN HFETs?- Transient and steady state studies (2006) (0)
Tailoring of hole band structure using biaxial strain for low-threshold, high modal purity multiquantum-well lasers (1990) (0)
Smart Electronic Materials: FERMI GOLDEN RULE (2005) (0)
Particles in Periodic Potentials (2007) (0)
Electronic and Optoelectronic Properties of Semiconductor Structures: STRUCTURAL PROPERTIES OF SEMICONDUCTORS (2003) (0)
Wavelength selective detection using excitonic resonances in GaAs/AlGaAs P-I-(MQW)-N structures (1990) (0)
A Jolt for Classical Physics (2007) (0)
Theoretical study on optimum barrier height of GaAs/AlxGa1−xAs multiple quantum well modulator: Inhomogeneous broadening effects (1993) (0)
Integrated MQW HBT Optical Switching and Thresholding Applications (1990) (0)
Temperature invariance of quantum well modulators using a feedback circuit based on quantum confined stark effect (1992) (0)
Summary Abstract: A comparative study of photovoltaic and photoluminescence spectra of undoped GaAs–Al0.25Ga0.75As multiple quantum well structures grown by molecular beam epitaxy (1986) (0)
Semiconductor microcavity light-emitting structures (1995) (0)
Approximation Methods: Time‐Independent Problems (2007) (0)
Quantum Mechanics and the Universe (2007) (0)
Appendix B: Boltzmann Transport Theory (2007) (0)
Polarization dependent inter-subband transitions in n-type InGaAs/GaAs and p-type SiGe/Ge self assembled dots: theoretical studies (2003) (0)
Quantum Transport of an Electron Wave Packet Across a Heterostructure Discontinuity: Applications in the GaAs/Al sub x Ga sub 1-xAs Heterosystem, (1992) (0)
Appendix A: Modern Classical Physics: A Review (2007) (0)
Coherent Transport and Mesoscopic Devices (2008) (0)
Collisions and Scattering (2007) (0)
Carrier relaxation in quantum well, quantum wire and quantum dot laser structures: consequences for gain compression and high-speed performance (1994) (0)
Electronic and Optoelectronic Properties of Semiconductor Structures: LATTICE VIBRATIONS: PHONON SCATTERING (2003) (0)
Electronic and Optoelectronic Properties of Semiconductor Structures: SEMICONDUCTOR BANDSTRUCTURE (2003) (0)
Electronic and Optoelectronic Properties of Semiconductor Structures: EXCITONIC EFFECTS AND MODULATION OF OPTICAL PROPERTIES (2003) (0)
Multispectral InGaAs/GaAs/AlGaAs laser arrays by MBE growth on patterned substrates (1997) (0)
Classical View of the Universe (2007) (0)
STRAIN IN SEMICONDUCTORS (2003) (0)
Temperature-dependent transparency conditions and spatial degeneracy in self-organized quantum dots (2003) (0)
Smart Electronic Materials: LATTICE VIBRATIONS AND PHONONS (2005) (0)
Smart Electronic Materials: ELECTRONIC LEVELS IN SOLIDS (2005) (0)
Theoretical and experimental studies on large-bandwidth 1.55-μm integrated InP-based strained MQW laser-modulators (1997) (0)
Particles in Simple Potentials (2007) (0)
Lasers for large modulation bandwidth and low-threshold applications (1994) (0)
Physical Symmetries and Conservation Laws (2007) (0)
Smart Electronic Materials: CHARGE TRANSPORT IN MATERIALS (2005) (0)
A Study of Charge Control and Gate Tunneling in a Ferroelectric-Oxide-Silicon Field Effect Transistor (2001) (0)
In-Situ RHEED Studies To Understand The Dislocation Formation Process In Growth Of InGaAs on GaAs (1988) (0)
Theoretical studies of impact ionisation in pseudomorphic structures of InGaAlAs on GaAs and InP substrates (1991) (0)
Smart Electronic Materials: INTRODUCTION (2005) (0)
Smart Electronic Materials: QUANTUM MECHANICS AND ELECTRONIC LEVELS (2005) (0)
Appendix C: Quantum Interference Devices (2007) (0)
Long-wavelength In(Ga)As/GaAs quantum dot electroluminescent devices (2001) (0)
Special Theory of Relativity (2007) (0)
Smart Electronic Materials: OPTICAL MODULATION AND SWITCHING (2005) (0)
FY9l AASERT III-V Modulation and Switching Devices for Optical Systems Applications. (1991) (0)
Time‐Dependent Problems: Approximation Methods (2007) (0)
Smart Electronic Materials: DIELECTRIC RESPONSE: POLARIZATION EFFECTS (2005) (0)
Quantum Transport of an Electron Wavepacket across a Heterostructure Discontinuity – Applications in the GaAs/AlGaAs Heterostructure (1991) (0)
Electric field effects on intersubband transitions in quantum well structures (1987) (0)
Particles in Spherically Symmetric Potentials (2007) (0)
Quantum-well excitonic devices for optical computing (1991) (0)
Electronic and Optoelectronic Properties of Semiconductor Structures: QUANTUM MECHANICS: USEFUL CONCEPTS (2003) (0)
Smart Electronic Materials: LIGHT ABSORPTION AND EMISSION (2005) (0)

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