J. E. Greene
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American materials scientist
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Mathematics
J. E. Greene's Degrees
- PhD Materials Science and Engineering Stanford University
Why Is J. E. Greene Influential?
(Suggest an Edit or Addition)According to Wikipedia, Joseph "Joe" E. Greene, known in his professional writing as J. E. Greene was an American materials scientist, specializing in thin films, crystal growth, surface science, and advanced surface engineering. His research and scientific contributions in these areas have been described as "pioneering" and "seminal" and that his work "revolutionized the hard-coating industry".
J. E. Greene's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Microstructural evolution during film growth (2003) (1328)
- Growth of single-crystal TiN/VN strained-layer superlattices with extremely high mechanical hardness (1987) (657)
- Oxidation of metastable single‐phase polycrystalline Ti0.5Al0.5N films: Kinetics and mechanisms (1990) (481)
- Size-dependent melting point depression of nanostructures: Nanocalorimetric measurements (2000) (383)
- Heteroepitaxial wurtzite and zinc‐blende structure GaN grown by reactive‐ion molecular‐beam epitaxy: Growth kinetics, microstructure, and properties (1993) (353)
- Development of preferred orientation in polycrystalline TiN layers grown by ultrahigh vacuum reactive magnetron sputtering (1995) (342)
- Pathways of atomistic processes on TiN(001) and (111) surfaces during film growth: An ab initio study (2003) (316)
- Microstructure modification of TiN by ion bombardment during reactive sputter deposition (1989) (279)
- Nanoindentation studies of single‐crystal (001)‐, (011)‐, and (111)‐oriented TiN layers on MgO (1996) (225)
- High‐flux low‐energy (≂20 eV) N+2 ion irradiation during TiN deposition by reactive magnetron sputtering: Effects on microstructure and preferred orientation (1995) (223)
- Microstructure and physical properties of polycrystalline metastable Ti0.5Al0.5N alloys grown by d.c. magnetron sputter deposition (1987) (210)
- Growth of poly- and single-crystal ScN on MgO(001): Role of low-energy N2+ irradiation in determining texture, microstructure evolution, and mechanical properties (1998) (208)
- Polycrystalline TiN films deposited by reactive bias magnetron sputtering: Effects of ion bombardment on resputtering rates, film composition, and microstructure (1992) (205)
- Average energy deposited per atom : a universal parameter for describing ion-assisted film growth ? (1993) (193)
- Crystal growth and microstructure of polycrystalline Ti1−xAlxN alloy films deposited by ultra-high-vacuum dual-target magnetron sputtering (1993) (188)
- Growth and properties of single crystal TiN films deposited by reactive magnetron sputtering (1985) (176)
- Synthesis of metastable epitaxial zinc‐blende‐structure AlN by solid‐state reaction (1992) (171)
- Use of an externally applied axial magnetic field to control ion/neutral flux ratios incident at the substrate during magnetron sputter deposition (1992) (170)
- Self-organized nanocolumnar structure in superhard TiB2 thin films (2005) (170)
- Mass and energy resolved detection of ions and neutral sputtered species incident at the substrate during reactive magnetron sputtering of Ti in mixed Ar+N2 mixtures (1994) (164)
- Review Article: Tracing the recorded history of thin-film sputter deposition: From the 1800s to 2017 (2017) (154)
- Reactive magnetron sputter deposited CNx: Effects of N2 pressure and growth temperature on film composition, bonding, and microstructure (1996) (153)
- Low‐energy (∼100 eV) ion irradiation during growth of TiN deposited by reactive magnetron sputtering: Effects of ion flux on film microstructure (1991) (149)
- Microstructures of TiN films grown by various physical vapour deposition techniques (1991) (149)
- Effects of high‐flux low‐energy (20–100 eV) ion irradiation during deposition on the microstructure and preferred orientation of Ti0.5Al0.5N alloys grown by ultra‐high‐vacuum reactive magnetron sputtering (1993) (147)
- Vacancy hardening in single-crystal TiNx(001) layers (2003) (137)
- Defect structure and phase transitions in epitaxial metastable cubic Ti0.5Al0.5N alloys grown on MgO(001) by ultra‐high‐vacuum magnetron sputter deposition (1991) (136)
- Interface structure in superhard TiN-SiN nanolaminates and nanocomposites : film growth experiments and ab initio calculations (2007) (135)
- Ion surface interactions during vapor phase crystal growth by sputtering, MBE, and plasma-enhanced CVD: Applications to semiconductors (1982) (128)
- Thermal desorption of ultraviolet–ozone oxidized Ge(001) for substrate cleaning (1993) (122)
- Si molecular beam Epitaxy: A model for temperature dependent incorporation probabilities and depth distributions of dopants exhibiting strong surface segregation (1985) (119)
- Electronic structure of ScN determined using optical spectroscopy, photoemission, and ab initio calculations (2001) (119)
- Laser‐induced plasmas for primary ion deposition of epitaxial Ge and Si films (1985) (118)
- Dense fully 111-textured TiN diffusion barriers: Enhanced lifetime through microstructure control during layer growth (1999) (118)
- Growth of single-crystal CrN on MgO(001): Effects of low-energy ion-irradiation on surface morphological evolution and physical properties (2002) (117)
- Low-temperature growth and critical epitaxial thicknesses of fully strained metastable Ge1−xSnx (x≲0.26) alloys on Ge(001)2×1 (1998) (114)
- A review of metal-ion-flux-controlled growth of metastable TiAlN by HIPIMS/DCMS co-sputtering (2014) (112)
- p‐type zinc‐blende GaN on GaAs substrates (1993) (111)
- Growth of epitaxial TiN films deposited on MgO(100) by reactive magnetron sputtering: The role of low-energy ion irradiation during deposition (1988) (111)
- Sputter Deposition Processes (2010) (109)
- Microstructure and electronic properties of the refractory semiconductor ScN grown on MgO(001) by ultra-high-vacuum reactive magnetron sputter deposition (1998) (109)
- Role of Tin+ and Aln+ ion irradiation (n = 1, 2) during Ti1-xAlxN alloy film growth in a hybrid HIPIMS/magnetron mode (2012) (109)
- Role of Tin+ and Aln+ ion irradiation (n = 1, 2) during Ti1-xAlxN alloy film growth in a hybrid HIPIMS/magnetron mode (2012) (109)
- Band gap in epitaxial NaCl-structure CrN(001) layers (2002) (107)
- Ion-assisted growth of Ti1−xAlxN/Ti1−yNbyN multilayers by combined cathodic-arc/magnetron-sputter deposition (1997) (107)
- Growth, surface morphology, and electrical resistivity of fully strained substoichiometric epitaxial TiNx (0.67⩽x<1.0) layers on MgO(001) (2004) (105)
- Fully dense, non-faceted 111-textured high power impulse magnetron sputtering TiN films grown in the absence of substrate heating and bias (2010) (102)
- Formation of polyhedral N2 bubbles during reactive sputter deposition of epitaxial TiN(100) films (1989) (101)
- Low‐energy ion irradiation during film growth for reducing defect densities in epitaxial TiN(100) films deposited by reactive‐magnetron sputtering (1987) (98)
- Phase composition and microstructure of polycrystalline and epitaxial TaNx layers grown on oxidized Si(001) and MgO(001) by reactive magnetron sputter deposition (2002) (97)
- Toughness enhancement in hard ceramic thin films by alloy design (2013) (97)
- Indium overlayers on clean Si(100)2×1: Surface structure, nucleation, and growth (1986) (97)
- Optical spectroscopy for diagnostics and process control during glow discharge etching and sputter deposition (1978) (90)
- Development of preferred orientation in polycrystalline NaCl-structure δ-TaN layers grown by reactive magnetron sputtering: Role of low-energy ion surface interactions (2002) (86)
- Metal versus rare-gas ion irradiation during Ti1−xAlxN film growth by hybrid high power pulsed magnetron/dc magnetron co-sputtering using synchronized pulsed substrate bias (2012) (86)
- Residual compressive stress in sputter-deposited TiC films on steel substrates (1981) (84)
- Mechanisms and kinetics of Si atomic‐layer epitaxy on Si(001)2×1 from Si2H6 (1991) (84)
- The interaction of Sb4 molecular beams with Si(100) surfaces: modulated-beam mass spectrometry and thermally stimulated desorption studies (1986) (83)
- Mechanisms of reactive sputtering of indium I: Growth of InN in mixed Ar-N2 discharges (1980) (82)
- Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part 2 (1983) (82)
- Epitaxial and polycrystalline HfNx (0.8⩽x⩽1.5) layers on MgO(001): Film growth and physical properties (2005) (81)
- Diffusion enhancement due to low‐energy ion bombardment during sputter etching and deposition (1980) (80)
- Epitaxial NaCl structure d-TaNx(001): Electronic transport properties, elastic modulus, and hardness versus N/Ta ratio (2001) (80)
- Low‐temperature growth of polycrystalline Si and Ge films by ultraviolet laser photodissociation of silane and germane (1982) (80)
- Epitaxial Sc1−xTixN(001): Optical and electronic transport properties (2001) (79)
- Si(001)2×1 gas‐source molecular‐beam epitaxy from Si2H6: Growth kinetics and boron doping (1994) (77)
- Multiscale Modeling of Thin-Film Deposition: Applications to Si Device Processing (2001) (76)
- Growth and physical properties of epitaxial HfN layers on MgO(001) (2004) (75)
- Growth and phase stability of epitaxial metastable InSb1−xBix films on GaAs. I. Crystal growth (1980) (75)
- Morphology of epitaxial TiN(001) grown by magnetron sputtering (1997) (73)
- Bendable bulk metallic glass: Effects of a thin, adhesive, strong, and ductile coating (2012) (72)
- Transmission electron microscopy studies of microstructural evolution, defect structure, and phase transitions in polycrystalline and epitaxial Ti1-xAlxN and TiN films grown by reactive magnetron sputter deposition (1991) (72)
- Microstructure evolution in TiN films reactively sputter deposited on multiphase substrates (1986) (71)
- Adsorption of tri-methyl aluminum molecules on silicon (1988) (71)
- Microstructural evolution and Poisson ratio of epitaxial ScN grown on TiN(001)/MgO(001) by ultrahigh vacuum reactive magnetron sputter deposition (1999) (67)
- Selection of metal ion irradiation for controlling Ti1-xAlxN alloy growth via hybrid HIPIMS/magnetron co-sputtering (2012) (66)
- Elastic constants of single-crystal Ti Nx (001) (0.67≤x≤1.0) determined as a function of x by picosecond ultrasonic measurements (2005) (65)
- Ar and excess N incorporation in epitaxial TiN films grown by reactive bias sputtering in mixed Ar/N2 and pure N2 discharges (1989) (65)
- Dynamic and structural stability of cubic vanadium nitride (2015) (64)
- Adsorption and thermal dissociation of disilane (Si2H6) on Si(100)2×1 (1990) (64)
- Growth of single-crystal metastable Ge1-xSnx alloys on Ge(100) and GaAs(100) substrates (1987) (62)
- Paradigm shift in thin-film growth by magnetron sputtering: From gas-ion to metal-ion irradiation of the growing film (2019) (62)
- GROWTH OF EPITAXIAL ALN(0001) ON SI(111) BY REACTIVE MAGNETRON SPUTTER-DEPOSITION (1995) (62)
- Vacancy-induced toughening in hard single-crystal V0.5Mo0.5Nx/MgO(0 0 1) thin films (2014) (61)
- Incorporation of accelerated low-energy (50-500 eV) In + ions in Si(100) films during growth by molecular-beam epitaxy (1989) (60)
- F-enhanced morphological and thermal stability of NiSi films on BF2+-implanted Si(001) (2002) (59)
- Strain-free, single-phase metastable Ti0.38Al0.62N alloys with high hardness: metal-ion energy vs. momentum effects during film growth by hybrid high-power pulsed/dc magnetron cosputtering (2014) (59)
- Growth and physical properties of epitaxial metastable cubic TaN(001) (1999) (58)
- Growth of GaN(0001)1×1 on Al2O3(0001) by gas‐source molecular beam epitaxy (1992) (57)
- Impulse stimulated ``explosive'' crystallization of sputter deposited amorphous (In,Ga)Sb films (1978) (56)
- Thermally induced self-hardening of nanocrystalline Ti–B–N thin films (2006) (54)
- Growth and optical properties of single-crystal metastable (GaAs)1-xGex alloys (1982) (54)
- Microstructural and microchemical characterization of hard coatings (1986) (53)
- Laser‐induced chemical vapor deposition of polycrystalline Si from SiCl4 (1980) (52)
- Stress development during deposition of CNx thin films (1998) (51)
- Effects of phase stability, lattice ordering, and electron density on plastic deformation in cubic TiWN pseudobinary transition-metal nitride alloys (2016) (51)
- Ge(001) gas‐source molecular beam epitaxy on Ge(001)2×1 and Si(001)2×1 from Ge2H6: Growth kinetics and surface roughening (1995) (50)
- Epitaxial Ti1-xWxN alloys grown on MgO(001) by ultrahigh vacuum reactive magnetron sputtering: Electronic properties and long-range cation ordering (2003) (50)
- Surface segregation model for Sn‐doped GaAs grown by molecular beam epitaxy (1982) (50)
- Compositionally modulated sputtered InSb/GaSb superlattices: Crystal growth and interlayer diffusion (1979) (50)
- Growth of High-Resistivity Wurtzite and Zincblende Structure Single Crystal Gan by Reactive-Ion Molecular Beam Epitaxy (1989) (49)
- Growth of single‐crystal metastable semiconducting (GaSb)1−xGex films (1981) (49)
- Raman scattering from TiNx (0.67 ≤ x ≤ 1.00) single crystals grown on MgO(001) (2011) (49)
- Mechanisms of reactive sputtering of indium III: A general phenomenological model for reactive sputtering (1980) (49)
- Control of Ti1−xSixN nanostructure via tunable metal-ion momentum transfer during HIPIMS/DCMS co-deposition (2015) (48)
- Thin Film Nucleation, Growth, and Microstructural Evolution: An Atomic Scale View (2010) (48)
- Molecular beam epitaxy of GaN(0001) utilizing NH3 and/or NH+x ions: Growth kinetics and defect structure (1995) (48)
- Improving the high-temperature oxidation resistance of TiB2 thin films by alloying with Al (2020) (48)
- Model calculations for accelerated As ion doping of Si during molecular beam epitaxy (1983) (48)
- Thermal and photostimulated reactions on Si2H6‐adsorbed Si(100)2×1 surfaces: Mechanisms of Si film growth by atomic‐layer epitaxy (1989) (47)
- TiN(001) and TiN(111) island coarsening kinetics: in-situ scanning tunneling microscopy studies (2001) (47)
- A review of the intrinsic ductility and toughness of hard transition-metal nitride alloy thin films (2019) (47)
- Ab initio and classical molecular dynamics simulations of N2 desorption from TiN(001) surfaces (2014) (47)
- Glow‐discharge optical spectroscopy for the analysis of thin films (1973) (47)
- Interfacial reactions in single-crystal-TiN (100)/Al/polycrystalline-TiN multilayer thin films (1992) (47)
- Mechanism for epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy (2003) (46)
- Effect of growth rate on the spatial distributions of dome-shaped Ge islands on Si(001) (2002) (46)
- Vibrational modes in epitaxial Ti 1 − x Sc x N ( 001 ) layers: An ab initio calculation and Raman spectroscopy study (2001) (46)
- Nucleation and initial growth of In deposited on Si3N4 using low‐energy (≤300 eV) accelerated beams in ultrahigh vacuum (1987) (45)
- Elastic constants, Poisson ratios, and the elastic anisotropy of VN(001), (011), and (111) epitaxial layers grown by reactive magnetron sputter deposition (2014) (44)
- Structural and electrical characteristics of InSb thin films grown by rf sputtering (1976) (44)
- Low‐temperature Si(001) epitaxy using low‐energy (〈E 〉≂18 eV) Si atoms (1994) (44)
- Epitaxial growth of metastable δ-TaN layers on MgO(001) using low-energy, high-flux ion irradiation during ultrahigh vacuum reactive magnetron sputtering (2002) (43)
- Nucleation kinetics during homoepitaxial growth of TiN(001) by reactive magnetron sputtering (2004) (43)
- Physical properties of epitaxial ZrN/MgO(001) layers grown by reactive magnetron sputtering (2013) (43)
- Absolute orientation-dependent anisotropic TiN(111) island step energies and stiffnesses from shape fluctuation analyses (2003) (42)
- Indium incorporation during the growth of (100)Si by molecular beam epitaxy: Surface segregation and reconstruction (1984) (42)
- Novel strategy for low-temperature, high-rate growth of dense, hard, and stress-free refractory ceramic thin films (2014) (42)
- Interfacial chemistry effects on the adhesion of sputter-deposited TiC films to steel substrates (1982) (42)
- Sn-mediated Ge∕Ge(001) growth by low-temperature molecular-beam epitaxy: Surface smoothening and enhanced epitaxial thickness (2005) (42)
- Direct evidence for an order/disorder phase transition at x≂0.3 in single‐crystal metastable (GaSb)(1−x)(Ge2)x alloys: High‐resolution x‐ray diffraction measurements (1986) (42)
- Modeling of dopant incorporation, segregation, and ion/surface interaction effects during semiconductor film growth by molecular beam epitaxy and plasma-based techniques (1985) (42)
- Effect of WN content on toughness enhancement in V1–xWxN/MgO(001) thin films (2014) (41)
- Dynamics of Ti, N, and TiNx (x=1-3) admolecule transport on TiN(001) surfaces (2012) (41)
- The effect of substrate bias on the electrical and optical properties of In2O3 films grown by RF sputtering (1978) (40)
- Determining absolute orientation-dependent step energies: a general theory for the Wulff-construction and for anisotropic two-dimensional island shape fluctuations (2003) (40)
- Absolute orientation-dependent TiN(0 0 1) step energies from two-dimensional equilibrium island shape and coarsening measurements on epitaxial TiN(0 0 1) layers (2002) (40)
- Epitaxial growth of In1−xGaxSb thin films by multitarget rf sputtering (1976) (39)
- Effects of high-flux low-energy ion bombardment on the low-temperature growth morphology of TiN(001) epitaxial layers (2000) (39)
- Electrical properties of Si films doped with 200‐eV In+ ions during growth by molecular‐beam epitaxy (1989) (39)
- Raman scattering from fully strained Ge1−xSnx(x⩽0.22) alloys grown on Ge(001)2×1 by low-temperature molecular beam epitaxy (1998) (38)
- Nucleation kinetics versus nitrogen partial pressure during homoepitaxial growth of stoichiometric TiN(0 0 1): A scanning tunneling microscopy study (2005) (38)
- Nitrogen-doped bcc-Cr films: Combining ceramic hardness with metallic toughness and conductivity (2016) (38)
- Mechanisms of reactive sputtering of indium II: Growth of indium oxynitride in mixed N2-O2 discharges (1980) (38)
- Photoluminescence studies of Si(100) doped with low-energy (100-1000 eV) B+ ions during molecular beam epitaxy (1989) (37)
- Interfacial reactions in epitaxial Al/Ti1−xAlxN (0≤x≤0.2) model diffusion‐barrier structures (1993) (37)
- Ti adatom diffusion on TiN(001): Ab initio and classical molecular dynamics simulations (2014) (36)
- Evolution of surface roughness in epitaxial Si0.7Ge0.3(001) as a function of growth temperature (200-600 °C) and Si(001) substrate miscut (1996) (36)
- Epitaxial growth of Ni on MgO(002)1×1: surface interaction vs. multidomain strain relief (1999) (36)
- Growth of metastable InSb1−xBix thin films by multitarget sputtering (1978) (36)
- In situ high-temperature scanning tunneling microscopy studies of two-dimensional TiN island coarsening kinetics on TiN (0 0 1) (2003) (35)
- Glow Discharge Optical Spectroscopy for Monitoring Sputter Deposited Film Thickness (1973) (35)
- Two-dimensional island dynamics: Role of step energy anisotropy (2006) (35)
- Multitarget sputtering using decoupled plasmas (1976) (35)
- Controlling the B/Ti ratio of TiBx thin films grown by high-power impulse magnetron sputtering (2018) (35)
- W deposition and titanium fluoride formation during WF6 reduction by Ti: Reaction path and mechanisms (1999) (35)
- Elastic properties and plastic deformation of TiC- and VC-based pseudobinary alloys (2018) (34)
- Adsorption and desorption kinetics of In on Si(100) (1989) (34)
- Design and characterization of a compact two‐target ultrahigh vacuum magnetron sputter deposition system: Application to the growth of epitaxial Ti1−xAlxN alloys and TiN/Ti1−xAlxN superlattices (1993) (34)
- Adaptive hard and tough mechanical response in single-crystal B1 VNx ceramics via control of anion vacancies (2020) (34)
- Strategy for simultaneously increasing both hardness and toughness in ZrB2-rich Zr1−xTaxBythin films (2019) (33)
- Origin of compositional variations in sputter‐deposited TixW1−x diffusion barrier layers (1995) (33)
- Electronic structure of the SiN x /TiN interface: A model system for superhard nanocomposites (2011) (33)
- The role of ion/surface interactions and photo-induced reactions during film growth from the vapor phase (1987) (33)
- Mechanisms of Al film growth by ultraviolet laser photolysis of trimethylaluminum (1986) (32)
- Processing and characterization of materials using ion beams (1989) (32)
- Controlling the boron-to-titanium ratio in magnetron-sputter-deposited TiBx thin films (2017) (32)
- Ab Initio Molecular Dynamics Simulations of Nitrogen/VN(001) Surface Reactions: Vacancy-Catalyzed N2 Dissociative Chemisorption, N Adatom Migration, and N2 Desorption (2016) (32)
- Raman scattering from epitaxial TaNx (0.94 ≤x≤ 1.37) layers grown on MgO(001) (2007) (32)
- UV‐laser photolysis of trimethylaluminum for Al film growth (1985) (32)
- Ar incorporation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N2 discharges (1988) (32)
- Morphological and electrical properties of rf sputtered Y2O3‐doped ZrO2 thin films (1976) (32)
- High mobility GaAs-AlxGa1-xAs single period modulation-doped heterojunctions (1981) (31)
- In situ scanning tunneling microscopy studies of the evolution of surface morphology and microstructure in epitaxial TiN(001) grown by ultra-high-vacuum reactive magnetron sputtering (1997) (31)
- Glow discharge optical spectroscopy for microvolume elemental analysis (1974) (31)
- Growth of metastable Ge1−xSnx/Ge strained layer superlattices on Ge(001)2×1 by temperature‐modulated molecular beam epitaxy (1995) (31)
- N and Ti adatom dynamics on stoichiometric polar TiN(111) surfaces (2016) (31)
- A review of the present understanding of the role of ion/surface interactions and photo-induced reactions during vapor-phase crystal growth (1986) (31)
- Formation and morphological evolution of self-similar 3D nanostructures on weakly interacting substrates (2018) (30)
- Effect of Al substitution on Ti, Al, and N adatom dynamics on TiN(001), (011), and (111) surfaces (2014) (30)
- A technique for detecting critical loads in the scratch test for thin film adhesion (1974) (30)
- Surface mass transport and island nucleation during growth of Ge on laser textured Si(001) (2002) (30)
- B‐doped Si(001) grown by gas‐source molecular‐beam epitaxy from Si2H6 and B2H6:B incorporation and electrical properties (1995) (29)
- Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy (1988) (29)
- Reactive ion etching of GaAs in CCl2F2 (1981) (29)
- Kinetics of Si1−xGex(001) growth on Si(001)2×1 by gas-source molecular-beam epitaxy from Si2H6 and Ge2H6 (1998) (29)
- CoSi2/Si1−xGex/Si(001) heterostructures formed through different reaction routes: Silicidation‐induced strain relaxation, defect formation, and interlayer diffusion (1995) (29)
- Adsorption and dissociation of Si2H6 on Ge(001)2 × 1 (1993) (29)
- Gas‐phase transport of WF6 through annular nanopipes in TiN during chemical vapor deposition of W on TiN/Ti/SiO2 structures for integrated circuit fabrication (1996) (29)
- Ion‐bombardment‐enhanced diffusion during the growth of sputtered superlattice thin films (1978) (29)
- Effects of B doping on hydrogen desorption from Si(001) during gas‐source molecular‐beam epitaxy from Si2H6 and B2H6 (1996) (29)
- Influence of Ar sputtering pressure on the adhesion of TiC films to steel substrates (1975) (28)
- Tracing the 5000-year recorded history of inorganic thin films from ∼3000 BC to the early 1900s AD (2014) (28)
- Effects of incident N atom kinetic energy on TiN/TiN(001) film growth dynamics: A molecular dynamics investigation (2017) (28)
- Phonon and electron contributions to the thermal conductivity of VNx epitaxial layers (2017) (28)
- Electrically active and inactive b lattice sites in ultrahighly b doped si(001): An x-ray near-edge absorption fine-structure and high-resolution diffraction study (1999) (28)
- Strategy for tuning the average charge state of metal ions incident at the growing film during HIPIMS deposition (2015) (28)
- Ultraviolet ozone induced oxidation of epitaxial Si1−xGex(111) (1993) (28)
- Growth and physical properties of epitaxial CeN layers on MgO(001) (2003) (28)
- Auger and X-ray photoelectron spectroscopy studies of preferential sputtering in Y2O3-doped ZrO2 films (1979) (28)
- The nature of the transition region formed between dc-bases rf sputtered TiC films and steel substrates (1978) (28)
- Ti and N adatom descent pathways to the terrace from atop two-dimensional TiN/TiN(001) islands (2014) (28)
- Ultrahigh B doping ({<=}10{sup 22} cm{sup -3}) during Si(001) gas-source molecular-beam epitaxy: B incorporation, electrical activation, and hole transport (2000) (28)
- Configurational disorder effects on adatom mobilities on Ti1−xAlxN(001) surfaces from first principles (2012) (27)
- Critical epitaxial thicknesses for low‐temperature (20–100 °C) Ge(001)2×1 growth by molecular‐beam epitaxy (1993) (27)
- Reactive sputtering in the ABSTM system (1993) (27)
- Effects of H coverage on Ge segregation during Si1−xGex gas-source molecular beam epitaxy (1997) (26)
- Raman scattering from crystalline and amorphous (GaSb)1-xGex semiconducting films (1983) (26)
- A low‐energy, ultrahigh vacuum, solid‐metal ion source for accelerated‐ion doping during molecular beam epitaxy (1984) (26)
- 3D-to-2D Morphology Manipulation of Sputter-Deposited Nanoscale Silver Films on Weakly Interacting Substrates via Selective Nitrogen Deployment for Multifunctional Metal Contacts (2020) (26)
- Growth of single crystal GaAs and metastable (GaSb)1−xGexAlloys by sputter deposition: Ion-surface interaction effects (1982) (26)
- Electro-erosion of metal surfaces (1974) (25)
- Pathways for hydrogen desorption from Si 1 − x Ge x ( 001 ) during gas-source molecular-beam epitaxy and ultrahigh-vacuum chemical vapor deposition (1998) (25)
- Growth of high quality epitaxial Ge films on (100)Si by sputter deposition (1982) (25)
- Al capping layers for nondestructive x-ray photoelectron spectroscopy analyses of transition-metal nitride thin films (2015) (25)
- Large-scale molecular dynamics simulations of TiN/TiN(001) epitaxial film growth (2016) (25)
- Growth and phase stability of epitaxial metastable InSb1−xBix films on GaAs. II. Phase stability (1980) (25)
- Molecular dynamics and quasidynamic simulations of low-energy particle bombardment effects during vapour-phase crystal growth: 10–50 eV Si and In atoms incident on (2 × 1)-terminated Si(001) (1996) (24)
- Low-temperature growth of dense and hard Ti0.41Al0.51Ta0.08N films via hybrid HIPIMS/DC magnetron co-sputtering with synchronized metal-ion irradiation (2017) (24)
- Adhesion of sputter-deposited carbide films to steel substrates (1976) (24)
- Reactive ion etching of GaAs in CCl4−xFx (x=0, 2, 4) and mixed CCl4−xFx/Ar discharges (1983) (24)
- Electron/phonon coupling in group-IV transition-metal and rare-earth nitrides (2013) (24)
- Combined steered arc-unbalanced magnetron grown niobium coatings for decorative and corrosion resistance applications (1996) (24)
- Self-organized anisotropic (Zr1−xSix)Ny nanocomposites grown by reactive sputter deposition (2015) (24)
- Epitaxial CrN(001) Grown and Analyzed In situ by XPS and UPS. I. Analysis of As-deposited Layers (2000) (24)
- Tracing the 4000 year history of organic thin films: From monolayers on liquids to multilayers on solidsa) (2015) (23)
- Epitaxial VN(001) Grown and Analyzed In situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers (2000) (23)
- Time evolution of ion fluxes incident at the substrate plane during reactive high-power impulse magnetron sputtering of groups IVb and VIb transition metals in Ar/N2 (2018) (23)
- Development of 111 texture in Al films grown on SiO2/Si(001) by ultrahigh‐vacuum primary‐ion deposition (1996) (23)
- Recent developments in surface science and engineering, thin films, nanoscience, biomaterials, plasma science, and vacuum technology (2018) (23)
- Gas rarefaction effects during high power pulsed magnetron sputtering of groups IVb and VIb transition metals in Ar (2017) (23)
- Real-time control of AlN incorporation in epitaxial Hf1 − xAlxN using high-flux, low-energy (10–40 eV) ion bombardment during reactive magnetron sputter deposition from a Hf0.7Al0.3 alloy target (2011) (23)
- Growth of high‐quality epitaxial GaAs films by sputter deposition (1980) (22)
- Growth and physical properties of epitaxial metastable Hf1 − xAlxN alloys deposited on MgO(001) by ultrahigh vacuum reactive magnetron sputtering (2007) (22)
- Single-phase polycrystalline Ti1−xWxN alloys (0⩽x⩽0.7) grown by UHV reactive magnetron sputtering: microstructure and physical properties (1994) (22)
- A model for the low‐temperature growth of epitaxial Ge and Si films from GeH2 and SiH2 radicals produced by UV photolysis of GeH4 and SiH4 (1986) (22)
- Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics (1997) (22)
- B‐doped fully strained Si1−xGex layers grown on Si(001) by gas‐source molecular beam epitaxy from Si2H6, Ge2H6, and B2H6: Charge transport properties (1996) (22)
- Growth and thermal stability of single crystal metastable semiconducting (GaSb),1−xGex films (1981) (21)
- Fracture-resistant thin-film metallic glass: Ultra-high plasticity at room temperature (2016) (21)
- Growth, nanostructure, and optical properties of epitaxial VNx/MgO(001) (0.80 ≤ x ≤ 1.00) layers deposited by reactive magnetron sputtering (2016) (21)
- Morphology and microstructure of epitaxial Cu(001) films grown by primary ion deposition on Si and Ge substrates (1996) (21)
- Metal-induced crystallization of R.F. sputtered a-Si thin films☆ (1976) (21)
- Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited wurtzite-structure AIN(0001) blocking layer (2001) (21)
- Effect of off stoichiometry on Raman scattering from epitaxial and polycrystalline HfNx (0.85≤x≤ 1.50) grown on MgO(001) (2008) (21)
- Surface segregation and growth‐mode transitions during the initial stages of Si growth on Ge(001)2×1 by cyclic gas‐source molecular beam epitaxy from Si2H6 (1994) (21)
- Enhanced Ti0.84Ta0.16N diffusion barriers, grown by a hybrid sputtering technique with no substrate heating, between Si(001) wafers and Cu overlayers (2018) (20)
- LEEM study of island decay on Si(110) (2004) (20)
- Sputtering of metal alloys containing second‐phase precipitates (1978) (20)
- V0.5Mo0.5Nx/MgO(001): Composition, nanostructure, and mechanical properties as a function of film growth temperature (2017) (20)
- Mechanisms of excimer laser cleaning of air‐exposed Si(100) surfaces studied by Auger electron spectroscopy, electron energy‐loss spectroscopy, reflection high‐energy electron diffraction, and secondary‐ion mass spectrometry (1991) (20)
- Refractive indices of zincblende structure β‐GaN(001) in the subband‐gap region (0.7–3.3 eV) (1996) (20)
- Electronic structure of the Si(001)2 × 1:H surface and pathway for H2 desorption (1995) (20)
- X-ray Photoelectron Spectroscopy Analyses of the Electronic Structure of Polycrystalline Ti1-xAlxN Thin Films with 0 ≤ x ≤ 0.96 (2014) (20)
- Phosphorus incorporation during Si(001):P gas-source molecular beam epitaxy: Effects on growth kinetics and surface morphology (2008) (19)
- Modification of elemental incorporation probabilities by ion bombardment during growth of III–V compound and metastable films (1980) (19)
- Si incorporation in Ti1 − xSixN films grown on TiN(001) and (001)-faceted TiN(111) columns (2014) (19)
- Reptation: a mechanism for cluster migration on (111) face-centered-cubic metal surfaces (1999) (19)
- Effects of surface vibrations on interlayer mass transport: Ab initio molecular dynamics investigation of Ti adatom descent pathways and rates from TiN/TiN(001) islands (2017) (19)
- Epitaxial Si(001) grown at 80–750 °C by ion‐beam sputter deposition: Crystal growth, doping, and electronic properties (1996) (19)
- Thermodynamics of the homogeneous and heterogeneous decomposition of trimethylaluminum, monomethylaluminum, and dimethylaluminumhydride: Effects of scavengers and ultraviolet‐laser photolysis (1991) (19)
- GaSb-Ge pseudobinary phase diagram (1982) (19)
- Growth, microstructure, and strain relaxation in low‐temperature epitaxial Si1−xGex alloys deposited on Si(001) from hyperthermal beams (1996) (18)
- Raman scattering from epitaxial HfN layers grown on MgO(001) (2006) (18)
- Interfacial reaction pathways and kinetics during annealing of epitaxial Al/TiN(001) model diffusion barrier systems (2001) (18)
- Semiconductor crystal growth by sputter deposition (1981) (18)
- Directed sputter deposition of AlCu: Film microstructure and microchemistry (1994) (18)
- Electronic properties of epitaxial TiN/VN(001) superlattices (1991) (18)
- Effect of steady-state hydrogen coverage on the evolution of crosshatch morphology during Si1−xGex/Si(001) growth from hydride precursors (2003) (17)
- Evolution of nanoscale texture in ultrathin TiN films (2001) (17)
- Phase transformations in ion‐mixed metastable (GaSb)1−x(Ge2)x semiconducting alloys (1984) (17)
- Where is the unpaired transition metal in substoichiometric diboride line compounds? (2020) (17)
- High temperature metal-induced crystallization of r.f. sputtered amorphous Si thin films (1976) (17)
- Interlayer diffusion in InSb/GaSb superlattice structure grown by multitarget rf sputtering (1977) (17)
- Age hardening in superhard ZrB2-rich Zr1-xTaxBy thin films (2021) (17)
- Control of the metal/gas ion ratio incident at the substrate plane during high-power impulse magnetron sputtering of transition metals in Ar (2017) (17)
- Measurement of boron impurity profiles in Si using glow discharge optical spectroscopy (1974) (16)
- Room temperature oxidation enhancement of porous Si(001) using ultraviolet–ozone exposure (1996) (16)
- Si incorporation probabilities and depth distributions in Ga1−xAlxAs films grown by molecular‐beam epitaxy (1986) (16)
- Growth of In1−xGaxSb and In1−xAlxSb films by mulsti target R.F. sputtering (1976) (16)
- Decomposition of hexafluoroacetylacetonate Cu(I) vinyltrimethylsilane on, and diffusion of Cu into single crystal and polycrystalline titanium nitride (1993) (16)
- Epitaxial V0.6W0.4N/MgO(001): Evidence for ordering on the cation sublattice (2013) (16)
- Growth, structure, and physical properties of single‐phase metastable fcc Cu1−xCrx solid solutions (1988) (16)
- Dynamics of 3D-island growth on weakly-interacting substrates (2019) (16)
- In situ X-ray Photoelectron, Ultraviolet Photoelectron, and Auger Electron Spectroscopy Spectra from First-Row Transition-Metal Nitrides: ScN, TiN, VN, and CrN (2000) (16)
- Mechanisms of the reactive‐ and chemical‐sputter deposition of TiO2 from Ti and TiC targets in mixed Ar+O2 discharges (1979) (16)
- Time‐resolved spectroscopic studies of the ultraviolet‐laser photolysis of Al alkyls for film growth (1987) (15)
- Microstructure evolution in amorphous Ge/Si multilayers grown by magnetron sputter deposition (1997) (15)
- Glow discharge optical spectroscopy as an analytical depth profiling technique (1975) (15)
- Self-organized lamellar structured tantalum–nitride by UHV unbalanced-magnetron sputtering (2005) (15)
- Low-energy ion irradiation during film growth: Kinetic pathways leading to enhanced adatom migration rates (2005) (15)
- Synchrotron x-ray diffraction and transmission electron microscopy studies of interfacial reaction paths and kinetics during annealing of fully-002-textured Al/TiN bilayers (2001) (15)
- Ultraviolet‐laser photolysis of disilane (1989) (15)
- C incorporation in epitaxial Ge1-yCy layers grown on Ge(001): An ab initio study (2000) (15)
- Fully strained low-temperature epitaxy of TiN/MgO(001) layers using high-flux, low-energy ion irradiation during reactive magnetron sputter deposition (2010) (15)
- DOPANT INCORPORATION KINETICS AND ABRUPT PROFILES DURING SILICON MOLECULAR BEAM EPITAXY (1989) (15)
- Growth of single‐crystal metastable (GaAs)1−x(Si2)x alloys on GaAs and (GaAs)1−x(Si2)x/GaAs strained‐layer superlattices (1989) (15)
- TiNx (0.6<x<1.2): Atomic arrangements, Electronic structure and recent results on crystal growth and physical properties of epitaxial layers (2008) (15)
- Temperature dependent formation of surface undulations in explosively crystallized films (1985) (15)
- Low temperature (Ts/Tm < 0.1) epitaxial growth of HfN/MgO(001) via reactive HiPIMS with metal-ion synchronized substrate bias (2018) (15)
- Kinetic pathways leading to layer-by-layer growth from hyperthermal atoms : A Multibillion time step molecular dynamics study (2007) (15)
- In-situ high-temperature scanning-tunneling-microscopy studies of two-dimensional island-decay kinetics on atomically smooth TiN(001) (2000) (14)
- Ge(011)-c(8×10) surface structure and hydrogen desorption pathways: a temperature-programmed desorption and scanning tunneling microscopy study (2000) (14)
- Al/TixW1−x metal/diffusion-barrier bilayers: Interfacial reaction pathways and kinetics during annealing (1997) (14)
- Ion bombardment effects on elemental incorporation probabilities during sputter deposition of GaSb and InSb (1979) (14)
- Magnitude of reward and acquisition of a black-white discrimination habit. (1953) (14)
- Dopant depth distributions as a function of growth temperature in In‐doped (100)Si grown by molecular beam epitaxy (1985) (14)
- Arsenic incorporation during Si(001):As gas-source molecular-beam epitaxy from Si2H6 and AsH3: Effects on film-growth kinetics (2000) (14)
- High-power impulse magnetron sputter deposition of TiBx thin films: Effects of pressure and growth temperature (2019) (14)
- Growth and electrical properties of sputter‐deposited single‐crystal GaSb films on GaAs substrates (1979) (14)
- Multifunctional ZrB2-rich Zr1-xCrxBy thin films with enhanced mechanical, oxidation, and corrosion properties (2020) (14)
- Reactively evaporated photoconductive PbO: Phase transformations induced by water vapor (1980) (14)
- Structure of the Si(011)-(16 × 2) surface and hydrogen desorption kinetics investigated using temperature-programmed desorption (1997) (13)
- Metastable (GaSb)(1-x)(Sn2)x alloys: Crystal growth and phase stability of single crystal and polycrystalline layers (1986) (13)
- Growth of CoSi 2 on SiÑ001Ö by reactive deposition epitaxy (2005) (13)
- Adatom-induced diffusion of two-dimensional close-packed Pt7 clusters on Pt(111) (1996) (13)
- Growth and mechanical properties of 111-oriented V0.5Mo0.5Nx/Al2O3(0001) thin films (2018) (13)
- Growth and mechanical properties of 111-oriented V0.5Mo0.5Nx/Al2O3(0001) thin films (2018) (13)
- Laser‐assisted chemical vapor deposition of Si: Low‐temperature (<600 °C) growth of epitaxial and polycrystalline layers (1985) (13)
- Dopant redistribution during the solid-phase growth of CrSi2 on Si(100) (1988) (13)
- Strained layer instabilities on vicinal surfaces: Ge0.8Si0.2 epitaxy on laser textured Si(001) (2004) (13)
- Coherent diffraction patterns of individual dislocation strain fields (2005) (13)
- Enhanced cluster mobilities on Pt(111) during film growth from the vapor phase (1998) (13)
- Interfacial reaction pathways and kinetics during annealing of 111-textured Al/TiN bilayers: A synchrotron x-ray diffraction and transmission electron microscopy study (2001) (12)
- Mechanisms of epitaxial GaAs crystal growth by sputter deposition: Role of ion/surface interactions (1983) (12)
- Defect ordering in epitaxial α‐GaN(0001) (1994) (12)
- Cross-Cultural Study of Relationships among Four Dimensions of Time Perspective (1971) (12)
- Morphology and microstructure of tensile-strained SiGe(001) thin epitaxial films (1998) (12)
- Growth of homoepitaxial Ge(001)2×1 by ultrahigh vacuum ion beam sputter deposition (1993) (12)
- The dynamics of TiNx (x = 1–3) admolecule interlayer and intralayer transport on TiN/TiN(001) islands (2015) (12)
- C lattice site distributions in metastable Ge1−yCy alloys grown on Ge(001) by molecular-beam epitaxy (2002) (12)
- Study of the Electro-Erosion Phenomenon of Fe and Zn (1973) (12)
- Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent Si0.7Ge0.3 layers on Si(001) (2002) (11)
- Carbon incorporation pathways and lattice sites in Si1−yCy alloys grown on Si(001) by molecular-beam epitaxy (2002) (11)
- Concentration transient analysis of antimony surface segregation during Si(001) molecular beam epitaxy (1991) (11)
- Growth of Si1−xGex(011) on Si(011)16×2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions (1999) (11)
- Influence of ion bombardment on the interaction of Sb with the Si(100) surface (1987) (11)
- Cluster diffusion and surface morphological transitions on Pt (111) via reptation and concerted motion (2000) (11)
- Growth of dense, hard yet low-stress Ti0.40Al0.27W0.33N nanocomposite films with rotating substrate and no external substrate heating (2020) (11)
- Energy and mass‐resolved detection of neutral and ion species using modulated‐pole‐bias quadrupole mass spectroscopy (1990) (11)
- B incorporation in Ge(001) grown by gas‐source molecular‐beam epitaxy from Ge2H6 and B2H6 (1995) (11)
- Hybrid surface roughening modes during low-temperature heteroepitaxy: Growth of fully-strained metastable Ge{sub 1-x}Sn{sub x} alloys on Ge(001)2x1 (1999) (10)
- Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular-beam epitaxy (2003) (10)
- Self-organized columnar Zr0.7Ta0.3B1.5 core/shell-nanostructure thin films (2020) (10)
- Summary Abstract: Growth of Si and Ge thin films by laser‐induced chemical vapor deposition (1982) (10)
- Molecular dynamics and quasidynamics simulations of low-energy ion/surface interactions leading to decreased epitaxial temperatures and increased dopant incorporation probabilities during Si MBE (1991) (10)
- Summary Abstract: Thermal and accelerated (≤200 eV) In doping of Si(100) layers during molecular beam epitaxy (1986) (10)
- C incorporation and segregation during Si1−yCy/Si(001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3 (2002) (10)
- Physics of Film Growth from the Vapor Phase (1993) (10)
- Generalization of an avoidance response to varying intensities of sound. (1954) (10)
- Ge(001):B gas-source molecular beam epitaxy: B surface segregation, hydrogen desorption, and film growth kinetics (1999) (10)
- Directed nanostructural evolution in Ti0.8Ce0.2N layers grown as a function of low-energy, high-flux ion irradiation (2004) (10)
- Plasmas in Deposition Processes (2010) (10)
- Organic thin films: From monolayers on liquids to multilayers on solids (2014) (10)
- Enhanced diffusion and precipitation in Cu: In alloys due to low energy ion bombardment (1981) (10)
- Abstract: Characterization of InN, In2O3, and In oxy‐nitride semiconducting thin films using XPS electron energy loss spectra (1979) (10)
- Epitaxial Ge/GaAs heterostructures by scanned cw laser annealing of a‐Ge layers on GaAs (1981) (10)
- Growth and physical properties of amorphous and single crystal ZnGeAs2 layers deposited on (100)GaAs by sputter deposition in excess Zn and As4 (1984) (10)
- Epitaxial (GaAs)1−x(Si2)x metastable alloys on GaAs(001) and (GaAs)1−x(Si2)x /GaAs strained‐layer superlattices: Crystal growth, spinodal decomposition, and antiphase domains (1994) (9)
- Epitaxial growth of CoSi2 on Si(001) by reactive deposition epitaxy: Island growth and coalescence (2006) (9)
- Phase‐selective chemical vapor deposition of boron carbide by nucleation control on patterned substrates (1989) (9)
- Roughening rates of strained-layer instabilities. (2005) (9)
- Atomic-Level Control during Film Growth under Highly Kinetically Constrained Conditions: H Mediation and Ultrahigh Doping during Si 1–X Ge x Gas-Source Epitaxy (2001) (9)
- Quantitative C lattice site distributions in epitaxial Ge1−yCy/Ge(001) layers (2001) (9)
- Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ rapid thermal annealing (2003) (9)
- Si1−yCy/Si(001) gas-source molecular beam epitaxy from Si2H6 and CH3SiH3: Surface reaction paths and growth kinetics (2003) (9)
- Direct measurements of strain depth profiles in Ge/Si(001) nanostructures (2003) (9)
- Compositional depth profiles of chemiplated Cu2S/(Zn,Cd)S heterojunction solar cells (1983) (9)
- Role of fast sputtered particles during sputter deposition: Growth of epitaxial Ge{sub 0.99}C{sub 0.01}/Ge(001) (2000) (9)
- Incorporation probabilities and depth distributions of aluminum co-evaporated during Si(100) molecular beam epitaxy (1990) (9)
- Novel hard, tough HfAlSiN multilayers, defined by alternating Si bond structure, deposited using modulated high-flux, low-energy ion irradiation of the growing film (2015) (8)
- Self-organized superlattice formation during crystal growth from continuous beam fluxes. (2003) (8)
- Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy (1997) (8)
- Determination of the valence electronic structure of condensed trimethylaluminum by photoelectron spectroscopy and molecular‐orbital calculations (1988) (8)
- Ion‐plated lead oxide, an x‐ray sensitive photoconductor (1977) (8)
- Formation of flat, relaxed Si1-xGex alloys on Si(001) without buffer layers (2006) (8)
- The influence of pressure and magnetic field on the deposition of epitaxial TiBx thin films from DC magnetron sputtering (2020) (8)
- Crystal growth and electronic properties of ultrahigh vacuum ion‐beam sputter deposited Sb‐doped Si(001)2×1 (1994) (8)
- Si(011)16×2 gas-source molecular beam epitaxy: Growth kinetics (2000) (8)
- SEMICONDUCTOR THIN FILMS GROWN BY LASER PHOTOLYSIS. (1982) (8)
- Electromigration in epitaxial Cu(001) lines (2002) (8)
- Directed self-assembly of Ge nanostructures on very high index, highly anisotropic Si(hkl) surfaces. (2005) (8)
- Epitaxial metastable Ge1−yCy (y⩽0.02) alloys grown on Ge(001) from hyperthermal beams: C incorporation and lattice sites (2000) (8)
- Sputter-cleaned Epitaxial VxMo(1-x)Ny/MgO(001) Thin Films Analyzed by X-ray Photoelectron Spectroscopy: 2. Single-crystal V0.47Mo0.53N0.92 (2013) (8)
- Structure and physical properties of polycrystalline hexagonal Ta2N films deposited by reactive sputtering (1991) (8)
- Incorporation of in by recoil implantation during MBE growth of Si(100) (1989) (8)
- Cubic-structure Al-rich TiAlSiN thin films grown by hybrid high-power impulse magnetron co-sputtering with synchronized Al+ irradiation (2020) (7)
- Low-Energy Ion/Surface Interactions during Film Growth from the Vapor Phase: Effects on Nucleation and Growth Kinetics, Defect Structure, and Elemental Incorporation Probabilities (1990) (7)
- Chapter 4 Properties of coated and modified surfaces (1985) (7)
- Arsenic-doped Si(001) gas-source molecular-beam epitaxy: Growth kinetics and transport properties (1999) (7)
- Si2H6 adsorption and dissociation pathways on Ge(001)2 ×1: mechanisms for heterogeneous atomic layer epitaxy (1993) (7)
- Si(001) epitaxy from hyperthermal beams: Crystal growth, doping, and electronic properties (1997) (7)
- Orientation-dependent mobilities from analyses of two-dimensional TiN(111) island decay kinetics (2006) (7)
- Si(113) hydrogen desorption kinetics: A temperature programmed desorption study (2001) (7)
- Phase selective deposition of boron achieved by crystallization control (1991) (6)
- Ultra-highly doped Si1−xGex(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics (2001) (6)
- Determination of absolute orientation-dependent TiN(001) and TiN(111) step energies (2004) (6)
- Sputter-cleaned Epitaxial VxMo(1-x)Ny/MgO(001) Thin Films Analyzed by X-ray Photoelectron Spectroscopy: 3. Polycrystalline V0.49Mo0.51N1.02 (2013) (6)
- Growth of single‐crystal metastable InSb1−xBix and (GaSb)1−xGex semiconducting films (1980) (6)
- rf-sputtered amorphous Si/crystalline Si junctions (1974) (6)
- Reaction paths and kinetics of aluminide formation in Al/epitaxial-W(001) model diffusion barrier systems (1995) (6)
- Photoluminescence from Si(001) films doped with 100-1000 eV B + ions during deposition by molecular beam epitaxy (1995) (6)
- The Role of Low-Energy Ion/Surface Interactions During Crystal Growth From the Vapor Phase (1987) (6)
- Growth and microstructure of epitaxial 45°-rotated bcc W layers on NaCl-structure MgO(001) substrates and TiN(001) buffer layers (1992) (6)
- Determination of concentrations and ionization energies of imperfections in degenerate InSb films (1979) (6)
- Destabilization and diffusion of two-dimensional close-packed Pt clusters on Pt(111) during film growth from the vapor phase (1998) (6)
- Enhanced intra- and interlayer mass transport on Pt(111) via 5–50 eV Pt atom impacts on two-dimensional Pt clusters (2006) (6)
- Low energy ion bombardment enhanced diffusion, segregation, and phase transformations in Cu:In alloys (1982) (6)
- Reflection thermal diffuse x-ray scattering for quantitative determination of phonon dispersion relations (2015) (5)
- Growth and physical properties of ZnGeAs2 (1983) (5)
- A Comparison of Auger Electron Spectra from Stoichiometric Epitaxial TiN(001) After (1) UHV Cleaving and (2) Ar+ Sputter Etching (2000) (5)
- Epitaxial and polycrystalline HfN (2005) (5)
- Single phase polycrystalline metastable (GaSb)1−xGex alloys from annealing of amorphous mixtures: Ion mixing effects during deposition (1982) (5)
- Growth of photovoltaic semiconductors (1993) (5)
- Ureteric stone extraction by a new double-balloon catheter: an experimental study. (1983) (5)
- Summary Abstract: The role of low‐energy ion bombardment during the growth of epitaxial TiN(100) films by reactive magnetron sputtering: Defect formation and annihilation (1987) (5)
- Corrosion Resistant TiTaN and TiTaAlN Thin Films Grown by Hybrid HiPIMS/DCMS Using Synchronized Pulsed Substrate Bias with No External Substrate Heating (2019) (5)
- Molecular Dynamics Simulations of Low-Energy Ion/Surface Interactions During Vapor Phase Crystal Growth: 10 eV Si Incident on Si(001)2×1 (1989) (5)
- Xps, Ups, and Hreels Studies of Excimer-Laser-Induced Dissociation of Al2(Ch3) Adsorbed on Si(100) Surfaces (1987) (5)
- Summary Abstract: Polycrystalline CdS films with large photoconductive gain grown by reactive sputtering (1981) (5)
- Hydrogen desorption kinetics and Ge2H6 reactive sticking probabilities on Ge-adsorbed Si(0 1 1) (2002) (5)
- Self-hardening of Nanocrystalline Ti-B-N Thin Films (2006) (5)
- Effects of Sb doping on Si(001) surface roughening and epitaxial thickness at low growth temperatures (100–300 °C) (1995) (4)
- Local strain relaxation in Si0.7Ge0.3 on Si(001) induced by Ga+ irradiation (1998) (4)
- Hybrid surface roughening modes during low-temperature heteroepitaxy : Growth of fully-strained metastable Ge 1 2 x Sn x alloys on Ge „ 001 ... 2 3 1 (1999) (4)
- CoSi2 growth on Si(001) by reactive deposition epitaxy: Effects of high-flux, low-energy ion irradiation (2006) (4)
- Influence of the Si evaporation source on the incorporation of In during Si molecular‐beam epitaxy growth: A comparative study of magnetically and electrostatically‐focused electron‐gun evaporators (1989) (4)
- A Review of Recent Results on Single Crystal Metastable Semiconducfors: Crystal Growth, Phase Stability, and Physical Properties (1984) (4)
- Abstract: Surface studies of Y2O3 doped CeO2 and ZrO2 thin films (1978) (4)
- Ion-assisted low-temperature (≤ 150 °C) epitaxial growth of TiN on Cu by reactive magnetron sputter deposition (1996) (4)
- Abstract: Optical spectroscopy for glow discharge sputtering diagnostics and process control (1978) (3)
- TiN film growth on misoriented TiN grains with simultaneous low-energy bombardment: Restructuring leading to epitaxy (2019) (3)
- Epitaxial metastable (GaSb)1-x(Ge(2-y)Sn2y)x quarternary alloys on GaAs(100): 1085 Crystal growth, structure, and raman scattering (1988) (3)
- A multiaperture ion source with adjustable optics to provide well‐collimated, high‐current‐density, low‐ to medium‐energy ion beams (1989) (3)
- Ge surface segregation during Si1−xGex(011) gas-source molecular beam epitaxy from Si2H6 and Ge2H6 (2001) (3)
- Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy (2011) (3)
- Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition (2011) (3)
- PRIMARY AND SECONDARY ION DEPOSITION OF EPITAXIAL SEMICONDUCTOR FILMS FROM LASER-INDUCED PLASMAS. (1983) (3)
- The Si3N4/TiN Interface: 6. Si/TiN(001) Grown and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy (2012) (3)
- Transitioning from the art to the science of thin films: 1964 to 2003 (2003) (3)
- Optical information storage using explosive crystallization in amorphous films (1983) (3)
- Aluminide formation in polycrystalline Al/W metal/barrier thin-film bilayers: Reaction paths and kinetics (1997) (3)
- Time‐resolved spectroscopic studies of the ultraviolet‐laser photolysis of aluminum bromide for Al film growth (1993) (3)
- Summary Abstract: Metastable face‐centered‐cubic Cu1−xCrx alloys (0 (1988) (3)
- Texture of Al thin films deposited by magnetron sputtering onto epitaxial W(001) (2000) (2)
- Copper CVD Reactions of Cu(I)(hfae)(vtms) Adsorbed on TiN (1992) (2)
- Summary Abstract: Photostimulated reactions in Al2(CH3)6: Gas phase and adsorbed layer photolysis (1986) (2)
- Summary Abstract: Si incorporation and segregation in Ga1−xAlxAs(100) films grown by molecular beam epitaxy (1986) (2)
- Basic research needs and opportunities in thin films and coatings (1982) (2)
- Growth of Germanium on Porous Silicon (001) (1996) (2)
- The Si3N4/TiN Interface: 4. Si3N4/TiN(001) Grown with a −250 V Substrate Bias and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy (2012) (2)
- Mechanical properties of VMoNO as a function of oxygen concentration: Toward development of hard and tough refractory oxynitrides (2019) (2)
- Summary Abstract: Growth of high quality epitaxial GaAs films by sputter deposition (1981) (2)
- Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation (2001) (2)
- Channeling-induced asymmetric distortion of depth profiles from polycrystalline-TiN/Ti/TiN(001) trilayers during secondary ion mass spectrometry (2000) (2)
- Summary abstract: Growth of metastable Cu1-xCrx solid solutions by ion mixing during deposition (1983) (2)
- The transient current behavior of metal/amorphous Si/p−Si diodes (1975) (2)
- Elastic properties and plastic deformation of TiC- and VC-based alloys (2018) (2)
- B incorporation and hole transport in fully strained heteroepitaxial Si1 − xGex grown on Si(0 0 1) by gas-source MBE from Si2H6, Ge2H6, and B2H6 (1997) (2)
- Electronic Structure of Adsorbed Trimethylaluminum on Clean Si(100) Surfaces (1988) (2)
- The Si3N4/TiN Interface: An Introduction to a Series of Ultrathin Films Grown and Analyzed In situ using X-ray Photoelectron Spectroscopy (2012) (2)
- Effect of growth temperature on photoluminescence from ion-beam-doped molecular beam epitaxial Si:As (1990) (2)
- Summary Abstract: Model calculations for thermal and accelerated beam doping in semiconductor films grown by molecular beam epitaxy (1984) (2)
- Effects of configurational disorder on adatom mobilities on TiAlN(001) surfaces (2012) (2)
- The near-infrared counterpart to SWIFT J1842.5-1124 (2008) (2)
- Crystal growth and controlled doping of epitaxial Ge films on (100)GaAs by sputter deposition (1983) (2)
- Epitaxial Sc 1¿x Ti x NÑ001Ö: Optical and electronic transport properties (2001) (2)
- Epitaxial VN(001) Grown and Analyzed In situ by AES After (1) Deposition and (2) Ar+ Sputter Etching (2000) (2)
- Erratum to: "Absolute orientation-dependent TiN( 0 0 1 ) step energies from two-dimensional equilibrium island shape and coarsening measurements on epitaxial TiN( 0 0 1 ) layers" [Surf. Sci. 513 (2002) 468-474] (2003) (2)
- Properties of coated and modified surfaces (1985) (2)
- The Si3N4/TiN Interface: 7. Ti/TiN(001) Grown and Analyzed In situ using X-ray Photoelectron Spectroscopy (2012) (1)
- Motivations of a murderer. (1948) (1)
- Raman Scattering from Metastable (Gasb)1-xGe2x Alloys (1985) (1)
- Ion-beam doping during molecular beam epitaxy (1989) (1)
- Experimental and Model Studies of Dopant Segregation During Growth of Silicon Films by Molecular Beam Epitaxy (1991) (1)
- Preparation and Structure of Cu-W Multilayers (1988) (1)
- UV Photostimulated Si Atomic-Layer Epitaxy (1991) (1)
- Improving the optical and crystal properties of ZnO nanotubes via a metallic glass quantum dot underlayer (2019) (1)
- Quantitative compositional depth profiling of Si1−x−yGexCy thin films by simultaneous elastic recoil detection and Rutherford backscattering spectrometry (1998) (1)
- Ethnicity as an Input Variable to Equity Theory (1976) (1)
- Processing and Characterization of Materials Using Ion Beams, Symposium held in Boston, Massachusetts on November 28 - December 2, 1988. Materials Research Society Symposium Proceedings. Volume 128. (1988) (0)
- Electronic Structure of Cubic Transition-Metal Nitrides (2002) (0)
- Controlled intra- and interlayer mass transport during low-energy Pt(111) homoepitaxy (2006) (0)
- Low-Energy Accelerated-Ion Doping of Si during Molecular Beam Epitaxy: Incorporation Probabilities, Depth Distributions, and Electrical Properties (1990) (0)
- ACCELERATED-ION BEAM DOPING DURING SI GROWTH BY MOLECULAR BEAM EPITAXY AND ION-ENCHANCED IN FILM DEPOSITION USING A LOW-ENERGY (40-300 EV) IN ION SOURCE. (1986) (0)
- magnetron sputter deposition (2001) (0)
- Growth and Properties of Amorphous Hf1−x−yAlxSiyN (0≤x≤0.2; 0≤y≤0.2) and a-Hf0.6Al0.2Si0.2N/nc-HfN Multilayers by DC Reactive Magnetron Sputtering from a Single Hf0.60Al0.20Si0.20 Target (2012) (0)
- Hf-Al-Si-N multilayers deposited by reactive magnetron sputtering from a single Hf0.6Al0.2Si0.2 target using high-flux, low-energy modulated substrate bias : film growth and properties (2014) (0)
- Laser-Induced Photodissociation of A12(CH3)6: Gas-Phase and Adsorbed Layer Dissociation Mechanisms for A1 Film Growth (1989) (0)
- Indium Ion Doping During Si Molecular Beam Epitaxy (1987) (0)
- Morphological and electrical properties of rf sputtered Y$sub 2$O$sub 3$- doped ZrO$sub 2$ thin films (1976) (0)
- Processing and characterization of materials using ion beams : symposium held November 28-December 2, 1988, Boston, Massachusetts, U.S.A. (1989) (0)
- Switching and Negative Resistance Behavior of Ag/aSi/Ag Thin Film Structures (1974) (0)
- The Role of Low-Energy Ion/Surface Interactions During Crystal Growth from the Vapor Phase: Effects on Microchemistry and Microstructure (1989) (0)
- “SiNx 1x5/TiN(001) surface reconstructions studied by scanning tunneling microscopy and ab initio calculations (2008) (0)
- Electron Energy-Loss Spectroscopy and Reflection High-Energy Electron Diffraction Studies of the Adsorption and Pyrolysis of Si2H6 on Si (100)2x1 (1989) (0)
- Publisher’s Note: “Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular-beam epitaxy” [Appl. Phys. Lett. 82, 4247 (2003)] (2003) (0)
- Microstructure and mechanical properties of : V0.5Mo0.5Nx(111)/Al2O3(0001) thin films (2014) (0)
- B-doped Si(001)2 × 1 gas-source molecular-beam epitaxy from Si2H6 and B2H6 (1995) (0)
- REVIEW OF ION SURFACE INTERACTIONS DURING CRYSTAL GROWTH FROM THE VAPOR PHASE. (1983) (0)
- An Investigation of the Effects of Reward and Punishment on Visual Perception (1959) (0)
- Physical Aging Behavior in Amorphous Pen Film as Measured by Creep | NIST (1998) (0)
- The Effect of Substrate Bias on the Electrical and Optical Properties of ln2O3 Films Grown by RF Sputtering (1978) (0)
- Sputter-deposited a-Si:H for p-i-n photodiodes (2013) (0)
- Abstract: Alloy sputtering (1977) (0)
- Local strain relaxation in Si 0 . 7 Ge 0 . 3 on Si „ 001 ... induced by Ga 1 irradiation (1998) (0)
- Enhanced Ti0.84Ta0.16N diffusion barriers, grown by a hybrid sputtering technique with no substrate heating, between Si(001) wafers and Cu overlayers (2018) (0)
- Growth of Si on Ge(001)2×l by gas-source molecular beam epitaxy (1993) (0)
- STATE EX REL. HENNING V. CAPLAN, 1968-NMSC-123, 79 N.M. 376, 443 P.2d 869 (S. Ct. 1968) STATE of New Mexico ex rel. Margherita M. HENNING, Petitioner, vs. (2012) (0)
- TACT 2011 International Thin Films Conference Taiwan Association for Coating and Thin Film Technology (2011) (0)
- Epitaxial Ge/GaAs Heterostructures by Scanned CW Laser Annealing of a-GE Layers on GaAS (1981) (0)
- Crystal orientation by cleavage plane reflected laser beam (1972) (0)
- Preface for the Festschrift Honoring Dr. Steve Rossnagel (2020) (0)
- Ge Segregation and Surface Roughening During Si Growth on Ge(001)2×l by Gas-Source Molecular Beam Epitaxy from Si 2 H 6 (1992) (0)
- Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha (2004) (0)
- Low Energy Si Bombardment Effects on Epitaxial Si Growth (1992) (0)
- Low-temperature growth of polycrystalline Si and Ge films by photolytic laser-induced CVD (1982) (0)
- Psycho-Social Adjustment in an Indian Boarding School, September 1, 1964 - August 31, 1965. Progress Report. (1965) (0)
- V0.5Mo0.5Nx/MgO(001) layers grown at 100-900 °C : composition, nanostructure, and mechanical properties (2014) (0)
- Mechanism of Si Laser Atomic Layer Bpitaxy Using the Adsorption and Thermally-induced Reactions of SizIIo on Si (0)
- Abstract: Reactively evaporated photoconductive PbO: crystal phase transformations induced by water vapor (1979) (0)
- Tracing the 5000-year recorded history of inorganic thin films from similar to 3000 BC to the early 1900s AD (2015) (0)
- ION/SURFACE AND PHOTON/SURFACE INTERACTIONS DURING VAPOR PHASE CRYSTAL GROWTH. (1984) (0)
- The effect of plasma-surface interactions on the structure formation of vapour deposited TiC/a-C:H nanocomposite films (2012) (0)
- Defect ordering in epitaxial aGaN ( QQ 01 ) (1999) (0)
- Laser-induced photodissociation of Al/sub 2/(CH/sub 3/)/sub 6/: Gas-phase and adsorbed layer dissociation mechanisms for Al film growth (1988) (0)
- Epitaxy of Si and Si₁_xGex(001) by ultrahigh vacuum ion - beam sputter deposition (1998) (0)
- Composition Analysis of Heterojunctions by Means of Electron and Optical Spectroscopies (1980) (0)
- Impulse stimulated crystallization in amorphous semiconductor films (1980) (0)
- Quantitative C lattice site distributions in epitaxial Ge 1 À yCy Õ Ge „ 001 ... layers (2001) (0)
- Abstract: Epitaxial growth of In1−xGaxSb thin films by multitarget rf sputtering (1977) (0)
- Abstract: Glow discharge optical spectroscopy for monitoring sputter deposition (1974) (0)
- Mechanism of Si Laser Atomic Layer Epitaxy Using the Adsorption and Thermally-induced Reactions of Si2H6 on Si(100) 2x1 (1989) (0)
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