Jerry G. Fossum

Jerry G. Fossum's AcademicInfluence.com Rankings

Jerry G. Fossum

Engineering

#4434

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#5627

Historical Rank

Electrical Engineering

#1249

World Rank

#1339

Historical Rank

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Engineering

Why Is Jerry G. Fossum Influential?

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According to Wikipedia, Jerry G. Fossum is an American electrical engineer who is a Distinguished Professor Emeritus at the University of Florida College of Engineering. Early life and education Fossum is a native of Phoenix, Arizona. He earned a Bachelor of Science, Master of Science, and PhD in electrical engineering from the University of Arizona.

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Jerry G. Fossum's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's (1983) (633)
Anomalous leakage current in LPCVD PolySilicon MOSFET's (1985) (271)
Nanoscale FinFETs with gate-source/drain underlap (2005) (248)
Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's (1991) (238)
Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETs (2002) (228)
Short-channel effects in SOI MOSFETs (1989) (227)
Double-gate CMOS: symmetrical- versus asymmetrical-gate devices (2001) (202)
A physical model for the dependence of carrier lifetime on doping density in nondegenerate silicon (1982) (202)
Comparison of threshold-voltage shifts for uniaxial and biaxial tensile-stressed n-MOSFETs (2004) (198)
Application of the superposition principle to solar-cell analysis (1979) (197)
Quantum-mechanical effects on the threshold voltage of undoped double-gate MOSFETs (2005) (181)
Physical operation of back-surface-field silicon solar cells (1977) (165)
Computer-aided numerical analysis of silicon solar cells (1976) (164)
Carrier recombination and lifetime in highly doped silicon (1983) (154)
Physical insights regarding design and performance of independent-gate FinFETs (2005) (151)
Theory of grain-boundary and intragrain recombination currents in polysilicon p-n-junction solar cells (1980) (133)
Physical subthreshold MOSFET modeling applied to viable design of deep-submicrometer fully depleted SOI low-voltage CMOS technology (1995) (123)
Suppression of corner effects in triple-gate MOSFETs (2003) (123)
A physical short-channel model for the thin-film SOI MOSFET applicable to device and circuit CAD (1988) (120)
A process/physics-based compact model for nonclassical CMOS device and circuit design (2004) (107)
The ballistic nanotransistor: a simulation study (2000) (106)
Physical insights on design and modeling of nanoscale FinFETs (2003) (105)
Effects of grain boundaries on the channel conductance of SOl MOSFET's (1983) (104)
CMOS Vertical Multiple Independent Gate Field Effect Transistor (MIGFET) (2004) (100)
Scaling fully depleted SOI CMOS (2003) (100)
High‐efficiency p+‐n‐n+ back‐surface‐field silicon solar cells (1978) (94)
Current-voltage characteristics of thin-film SOI MOSFET's in strong inversion (1984) (90)
Modeling and Significance of Fringe Capacitance in Nonclassical CMOS Devices With Gate–Source/Drain Underlap (2006) (88)
On the feasibility of nanoscale triple-gate CMOS transistors (2005) (86)
Speed superiority of scaled double-gate CMOS (2002) (82)
A physical charge-based model for non-fully depleted SOI MOSFET's and its use in assessing floating-body effects in SOI CMOS circuits (1995) (79)
The importance of surface recombination and energy-bandgap arrowing in p-n-junction silicon solar cells (1979) (78)
Nanoscale FD/SOI CMOS: thick or thin BOX? (2005) (74)
On the threshold Voltage of strained-Si-Si/sub 1-x/Ge/sub x/ MOSFETs (2005) (71)
Generation-recombination transient effects in partially depleted SOI transistors: systematic experiments and simulations (1998) (70)
Dynamic floating-body instabilities in partially depleted SOI CMOS circuits (1994) (68)
Partitioned-charge-based modeling of bipolar transistors for non-quasi-static circuit simulation (1986) (67)
Physical DMOST modeling for high-voltage IC CAD (1990) (67)
An analytic model for minority-carrier transport in heavily doped regions of silicon devices (1981) (66)
Silicon-On-Insulator Technology and Devices XII (2003) (65)
Anomalous subthreshold current—Voltage characteristics of n-channel SOI MOSFET's (1987) (64)
Physics underlying the performance of back-surface-field solar cells (1980) (61)
New physical insights and models for high-voltage LDMOST IC CAD (1991) (60)
Energy-band distortion in highly doped silicon (1983) (60)
Physical compact modeling and analysis of velocity overshoot in extremely scaled CMOS devices and circuits (2001) (58)
Transient drain current and propagation delay in SOI CMOS (1984) (54)
Rigid band analysis of heavily doped semiconductor devices (1981) (53)
Potential improvement of polysilicon solar cells by grain boundary and intragrain diffusion of aluminum (1984) (52)
SOI design for competitive CMOS VLSI (1990) (52)
Pragmatic design of nanoscale multi-gate CMOS (2004) (52)
Performance projections of scaled CMOS devices and circuits with strained Si-on-SiGe channels (2003) (51)
Grasping SOI floating-body effects (1998) (49)
A charge-based large-signal bipolar transistor model for device and circuit simulation (1989) (48)
Threshold voltage and bulk inversion effects in nonclassical CMOS devices with undoped ultra-thin bodies (2007) (47)
A novel low cost 25μm thin exfoliated monocrystalline Si solar cell technology (2011) (46)
Bulk inversion in FinFETs and implied insights on effective gate width (2005) (43)
Design Optimization and Performance Projections of Double-Gate FinFETs With Gate–Source/Drain Underlap for SRAM Application (2007) (42)
Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs (2013) (42)
Physical noise modeling of SOI MOSFETs with analysis of the Lorentzian component in the low-frequency noise spectrum (2000) (39)
Silicon solar cell designs based on physical behavior in concentrated sunlight (1978) (39)
A charge-based large-signal model for thin-film SOI MOSFET's (1985) (38)
Physical modeling of temperature dependences of SOI CMOS devices and circuits including self-heating (1998) (36)
On the performance advantage of PD/SOI CMOS with floating bodies (2002) (36)
The ITFET: A Novel FinFET-Based Hybrid Device (2006) (36)
Physical insights on nanoscale multi-gate CMOS design (2007) (35)
Low-voltage transient bipolar effect induced by dynamic floating-body charging in PD/SOI MOSFETs (1995) (35)
Multiple independent gate field effect transistor (MIGFET) - multi-fin RF mixer architecture, three independent gates (MIGFET-T) operation and temperature characteristics (2005) (35)
GAAFET Versus Pragmatic FinFET at the 5nm Si-Based CMOS Technology Node (2017) (34)
Subthreshold behavior of thin-film LPCVD PolySilicon MOSFET's (1986) (33)
Low-voltage transient bipolar effect induced by dynamic floating-body charging in scaled PD/SOI MOSFETs (1996) (31)
Subthreshold kinks in fully depleted SOI MOSFET's (1995) (31)
Design Optimization of Radiation-Hardened CMOS Integrated Circuits (1975) (30)
Extremely scaled fully depleted SOI CMOS (2002) (29)
Realizing super-steep subthreshold slope with conventional FDSOI CMOS at low-bias voltages (2010) (29)
Scalable PD/SOI CMOS with floating bodies (1998) (29)
Extremely scaled double-gate CMOS performance projections, including GIDL-controlled off-state current (1999) (29)
Physical modeling of high-current transients for bipolar transistor circuit simulation (1987) (28)
SOI versus bulk-silicon nanoscale FinFETs (2010) (28)
Short-Channel Effects in Independent-Gate FinFETs (2007) (28)
A minority-carrier transport model for polysilicon contacts to silicon bipolar devices, including solar cells (1980) (28)
The dependence of open-circuit voltage on illumination level in p-n junction solar cells (1977) (28)
A high-low junction emitter structure for improving silicon solar cell efficiency (1978) (28)
On the Feasibility of Nanoscale Triple-Gate (2005) (27)
Analysis of minority-carrier transport in polysilicon devices (1982) (25)
A compact QM-based mobility model for nanoscale ultra-thin-body CMOS devices (2004) (24)
Physical insights on electron mobility in contemporary FinFETs (2006) (24)
Physical Insights on BJT-Based 1T DRAM Cells (2009) (24)
Charge-control analysis of the COMFET turn-off transient (1986) (24)
New Insights on “Capacitorless” Floating-Body DRAM Cells (2007) (23)
VB-6 Charge-based large-signal modeling of thin-film SOI MOSFET's (1984) (23)
Carrier Mobility/Transport in Undoped-UTB DG FinFETs (2007) (23)
Recent Upgrades and Applications of UFDG (2006) (23)
Emitter current suppression in a high‐low‐junction emitter solar cell using an oxide‐charge‐induced electron accumulation layer (1978) (23)
A Physical Model for Fringe Capacitance in Double-Gate MOSFETs With Non-Abrupt Source/Drain Junctions and Gate Underlap (2010) (22)
A Charge-Based Large-Signal Model for Thin-Film SOI MOSFET's (1985) (22)
Pictorial derivation of the influence of degeneracy and disorder on nondegenerate minority-carrier concentration and recombination current in heavily doped silicon (1981) (22)
Performance of n+-p silicon solar cells in concentrated sunlight (1977) (22)
Network representations of LIGBT structures for CAD of power integrated circuits (1988) (22)
Inverted T channel FET (ITFET) - Fabrication and characteristics of vertical-horizontal, thin body, multi-gate, multi-orientation devices, ITFET SRAM bit-cell operation. A novel technology for 45nm and beyond CMOS. (2005) (21)
Physical compact model for threshold voltage in short-channel double-gate devices (2003) (20)
Source/drain-doping engineering for optimal nanoscale FinFET design (2004) (20)
Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors (1979) (20)
A physical model for gate-to-body tunneling current and its effects on floating-body PD/SOI CMOS devices and circuits (2004) (20)
Nanoscale CMOS: potential nonclassical technologies versus a hypothetical bulk-silicon technology (2005) (19)
Significance of the channel—Charge partition in the transient MOSFET model (1986) (18)
Computer-aided performance assessment of fully depleted SOI CMOS VLSI circuits (1993) (18)
Static and dynamic latchup in the LIGBT (1988) (17)
SOI floating-body, device and circuit issues (1997) (17)
Extraordinarily high drive currents in asymmetrical double-gate MOSFETs (2000) (17)
Process/physics-based threshold voltage model for nano-scaled double-gate devices (2004) (16)
A comparative analysis of the dynamic behavior of BTG/SOI MOSFETs and circuits with distributed body resistance (1998) (16)
Compact non-local modeling of impact ionization in SOI MOSFETs for optimal CMOS device/circuit design (1996) (15)
Current-drive enhancement limited by carrier velocity saturation in deep-submicrometer fully depleted SOI MOSFETs (1993) (15)
Influence of the dopant density profile on minority-carrier current in shallow, heavily doped emitters of silicon bipolar devices (1985) (15)
Simplified energy-balance model for pragmatic multi-dimensional device simulation (1997) (15)
Mobility enhancement via volume inversion in double-gate MOSFETs (2003) (14)
Effects on the open-circuit voltage of grain boundaries within the junction space-charge region of polycrystalline solar cells (1980) (14)
Back-contact solar cells in thin crystalline silicon (2010) (14)
A Novel Two-Transistor Floating-Body/Gate Cell for Low-Power Nanoscale Embedded DRAM (2008) (13)
MMSPICE: A semi-numerical mixed-mode device/circuit simulator for advanced bipolar technology CAD (1990) (13)
Non-classical CMOS device design (2003) (13)
Insights on Design and Scalability of Thin-BOX FD/SOI CMOS (2010) (13)
On the Suitability of a High- $k$ Gate Dielectric in Nanoscale FinFET CMOS Technology (2008) (13)
SPICE Simulation of SOI MOSFET Integrated Circuits (1986) (13)
Optimal double-gate MOSFETs: symmetrical or asymmetrical gates? (1999) (13)
Demonstration of excitation‐dependent grain‐boundary recombination velocity in polycrystalline silicon (1984) (13)
The effect of body resistance on the breakdown characteristics of SOI MOSFET's (1994) (13)
Simulation-based assessment of 50 nm double-gate SOI CMOS performance (1998) (13)
A study of floating-body effects on inverter chain delay (1995) (12)
Limitations on the open‐circuit voltage imposed by P+ and N+ regions in silicon solar cells (1981) (12)
Development of high-efficiency P(+)-N-N(+) back-surface-field silicon solar cells (1978) (11)
A simple two-dimensional model for subthreshold channel-length modulation in short-channel MOSFETs (1993) (11)
Design considerations for silicon HLE solar cells (1978) (11)
High-voltage device modeling for SPICE simulation of HVIC's (1988) (11)
A unifying study of tandem-junction, front-surface-field, and interdigitated-back-contact solar cells (1980) (11)
Design issues and insights for low-voltage high-density SOI DRAM (1998) (10)
Floating-body kinks and dynamic effects in fully depleted SOI MOSFETs (1995) (10)
A Simplified Superior Floating-Body/Gate DRAM Cell (2009) (10)
Implementation of nonlocal model for impact-ionization current in bipolar circuit simulation and application to SiGe HBT design optimization (1995) (10)
Analysis and control of hysteresis in PD/SOI CMOS (1999) (10)
A bipolar device modeling technique applicable to computer-aided circuit analysis and design (1973) (10)
Threshold Voltage Adjustment in Nanoscale DG FinFETs Via Limited Source/Drain Dopants in the Channel (2009) (10)
Numerical simulation of temperature-dependent minority-hole transport in n+ silicon emitters (1986) (9)
Analysis and control of BJT latch in fully depleted floating-body submicron SOI MOSFETs (1990) (9)
Effective minority-carrier mobility in heavily doped silicon defined by trapping and energy-gap narrowing (1985) (8)
Subthreshold MOSFET conduction model and optimal scaling for deep-submicron fully depleted SOI CMOS (1993) (8)
Inverse base-width modulation and collector space-charge-region widening: degrading effects at high current densities in highly scaled BJT's (and HBT's) (1994) (8)
Anomalous Subthreshold Current-Voltage Characteristics of n-Channel (1987) (8)
Review of physics underlying recent improvements in silicon solar-cell performance (1980) (8)
Anomalous floating-body effects in SOI MOSFETs: Low-voltage CMOS? (2011) (7)
Systematic computer-aided three-dimensional modeling of integrated bipolar devices (1971) (7)
A physical SiGe-base HBT model for circuit simulation and design (1992) (6)
Performance Limitations of Deep-Submicron Fully Depleted Soi Mosfet's (1992) (6)
DICE: A Beneficial Short-Channel Effect in Nanoscale Double-Gate MOSFETs (2008) (6)
A pragmatic approach to integrated process/device/circuit simulation for IC technology development (1991) (6)
A physical model for the conductance of gated p-i-n switches (1985) (6)
Achieving the ballistic-limit current in Si MOSFETs (2003) (6)
A Novel Two-Transistor Floating-Body Memory Cell (2007) (6)
Physics-based compact modeling for nonclassical CMOS (2005) (5)
Strategies for the analysis of the effects of grain boundaries on the performance of polysilicon solar cells (1981) (5)
BiMOS modeling for reliable SOI circuit design (1996) (5)
A Floating-Body/Gate DRAM Cell Upgraded for Long Retention Time (2011) (5)
A Unified Process-Based Compact Model for Scaled PD/SOI and Bulk-Si MOSFETs (2002) (4)
Moderate inversion in SOI MOSFET's with grain boundaries (1983) (4)
Monitoring hot-electron-induced degradation of floating-body SOI MOSFETs (1990) (4)
A hybrid FinFET/SOI MOSFET (2005) (4)
Control of off-state current in scaled PD/SOI CMOS digital circuits (1998) (4)
Modeling impact ionization in advanced bipolar transistors for device/circuit simulation (1988) (4)
Dynamic effects in BTG/SOI MOSFETs and circuits due to distributed body resistance (1997) (4)
Dynamic data retention and implied design criteria for floating-body SOI DRAM (1996) (4)
A new approach to bipolar device modeling for CAD (1972) (4)
A novel compact model of quantum effects in scaled SOI and double-gate MOSFETs (2000) (4)
Multiple independent gate field effect transistors : Device, process, applications (2006) (4)
Remote plasma chemical vapor deposition for high-efficiency ultra-thin ∼25-microns crystalline Si solar cells (2013) (4)
A low cost kerfless thin crystalline Si solar cell technology (2012) (4)
Modeling issues for advanced bipolar device/circuit simulation (1989) (4)
Basic corrections to predictions of solar cell performance required by nonlinearities (1976) (4)
Model selection for SOI MOSFET circuit simulation (1988) (4)
Experimental Demonstration of the High-Performance Floating-Body/Gate DRAM Cell for Embedded Memories (2012) (4)
An analytic characterization of weak-inversion drift current in a long-channel MOSFET (1983) (4)
ITFET: Inverted T Channel FET, A Novel Device architecture and circuits based on the ITFET (2006) (3)
Kink-free SOI analog circuit design with floating-body/NFD MOSFETs (1997) (3)
Kink-free analog circuit design with floating-body NFD/SOI CMOS: a current-steering D-A converter (1997) (3)
Effects Of Grain Boundaries On Channel Conduction In Thin Film Polysilicon On Silicon-Dioxide Metal Oxide Semiconductor Field Effect Transistors (SOI MOSFETs) (1983) (3)
A Novel Low Cost 25µm Thin Exfoliated Monocrystalline Si Solar Cell Technology (2011) (3)
Effects of Grain Boundaries on the Current-Voltage Characteristics of SOI Mosfets (1984) (3)
Non-local modeling of impact ionization for optimal device/circuit design in fully depleted SOI CMOS technology (1993) (3)
Bulk inversion in FinFETs and the implied insignificance of the effective gate width (2004) (3)
Exfoliated ∼25μm Si foil for solar cells with improved light-trapping (2013) (3)
Physical Modeling Needed for Reliable SOI Circuit Design (Special Issue on SOI Devices and Their Process Technologies) (1997) (3)
Role of the bipolar transistor on the hot-carrier-degradation of SOI MOSFETs (1995) (3)
Physics underlying recent improvements in silicon solar-cell performance (1979) (2)
A model too hot to handle? [MOSFET model] (2002) (2)
Physics underlying improved efficiency of high-low-junction emitter silicon solar cells (1977) (2)
Non-quasi-static modeling/implementation of BJT current crowding for seminumerical mixed-mode device/circuit simulation (1992) (2)
Unique problems, and possible solutions, in fully depleted SOI CMOS VLSI circuits (1991) (2)
Viable deep-submicron FD/SOI CMOS design for low-voltage applications (1994) (2)
Analytic accounting for carrier velocity overshoot in advanced BJT's for circuit simulation (1993) (2)
Exploitation of volume inversion in optimal DG MOSFET design (2001) (2)
A model too hot to handle (2002) (2)
Influence of grain boundaries on recombination in polysilicon pn-junction solar cells (1980) (2)
Linear-region conductance of thin-film SOI MOSFET's with grain boundaries (1983) (2)
SOI design for submicron CMOS (1989) (2)
Significant time constants defined by high-current charge dynamics in advanced silicon-based bipolar transistors (1994) (2)
p+-n-n+ solar cells with hole diffusion lengths comparable with the base width: A simple analytic model (1981) (2)
Design optimization of silicon solar cells for concentrated-sunlight, high-temperature applications (1976) (2)
1995 IEEE INTERNATIONAL SO1 CONFERENCE PROCEEDINGS (1992) (2)
Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs: Unique features of UTB MOSFETs (2013) (2)
The effect of intrinsic body resistance on the breakdown characteristics of DBTS NFD SOI MOSFET's (1993) (2)
Subthreshold quantum-mechanical effects in undoped double-gate mosfets (2005) (1)
An insightful analysis of the hybrid insulated-gate bipolar transistor (1988) (1)
An ultra-fast floating-body/gate cell for embedded DRAM (2013) (1)
CMOS optimization for radiation hardness (1975) (1)
Physical models of thin film polycrystalline solar cells based on measured grain-boundary and electronic-parameter properties. Final report, September 18, 1978-December 31, 1979 (1979) (1)
Development of high-efficiency P/sup +/-N-N/sup +/ back-surface-field silicon solar cells (1978) (1)
Improvement of polysilicon solar cells by aluminum diffusion (1982) (1)
Correction to "Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors" (1979) (1)
Low-temperature off-state bipolar effect in floating-body PD/SOI MOSFETs (2000) (1)
Modeling and simulation of thin SOI MOSFET's: concepts, tools, and results (1993) (1)
Modeling of Saturation-Region Characteristics of Nanoscale Double-Gate MOSFETs (1)
Physical modeling of beneficial dynamic floating-body effects in non-fully depleted SOI CMOS circuits (1994) (1)
Floating-body problems and benefits in fully depleted SOI CMOS VLSI circuits (1991) (1)
TCAD-Based Assessment of the Lateral GAA Nanosheet Transistor for Future CMOS (2021) (1)
(Plenary) Physical Insights on the Design of UTB Devices, Including FinFETs (2015) (1)
Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs: Physical constants (2013) (1)
Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs: FinFETs (2013) (1)
IIB-3 analysis of the unique characteristics of the hybrid LIGT/DMOST (HIGT) (1987) (1)
Designing Reliable SOI CMOS Circuits with Floating-Body Effects (1998) (1)
A physical and computationally efficient methodology for statistical circuit simulation in bipolar technologies (1995) (1)
A SIMULATION-BASED PREVIEW OF EXTREMELY SCALED DOUBLE-GATE CMOS DEVICES AND CIRCUITS (2002) (0)
What is the killing advantage of multiple-gate SOI MOSFETs: electrostatics and scalability, transport or functionality ? (2009) (0)
IEEE 1988 Bipolar Circuits E Technology Meting MODELING IMPACT IONIZATION IN MVANCED BIPOLAR TRANSISTORS FOR DEVICE/CIRCUIT SIMULATION (1988) (0)
Numerical analysis of back-surface-field silicon solar cells (1975) (0)
Theoretical-Experimental Analysis of the Effects of Grain Boundaries on the Electrical Properties of SOI (Silicon-on-Insulator) MOSFETS. (1983) (0)
Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs: Introduction (2013) (0)
LP-HP nanoscale FinFET-CMOS design via source/drain engineering (2008) (0)
Improved high/low junction silicon solar cell. (1986) (0)
UFDC, and nanoscale FinFET-CMOS design and performance projections (2005) (0)
Silicon solar cell development for concentrator applications (1977) (0)
Polysilicon emitter design for scaled BiCMOS circuits (1992) (0)
Strained Si/SiGe channels: A new performance advantage for PD/SOI CMOS (2003) (0)
Kink-Free Analog Circuit Design with Floating-Body A Current-Steering D-A Converter (1997) (0)
Teaching Nanoelectronic Devices (2004) (0)
Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs: Planar fully depleted SOI MOSFETs (2013) (0)
Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs: References (2013) (0)
Multi-Gate Device Architectures for GaN based Power Switching Devices (2013) (0)
Physical models of thin film polycrystalline solar cells based on measured grain-boundary and electronic-parameter properties. Quarterly report (1979) (0)
VIB-7 implications of the temperature dependences of minority-hole mobility and bandgap narrowing in n+emitters (1985) (0)
Physical models for recombination currents in polycrystalline silicon p-n junction solar cells☆ (1980) (0)
UF “Compact” Models: A Historical Perspective (2011) (0)
Multiple transient effects in SOI transistors: Systematic measurements and simulation (1997) (0)
Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs: Symbols (2013) (0)
Characterization and performance of BSF, p/sup +/nn/sup +/, silicon concentrator solar cells (1979) (0)
Insights on Carrier Mobilities and Transport in Contemporary DG FinFETs (2006) (0)
Parameters for Point-Defect Diffusion and Recombination Mark E. Law. Member, IEEE (1991) (0)
Scaling floating-body DRAM: Rationale for a refined 2T Cell (2010) (0)
Simulation and assessment of non-quasi-static current crowding in scaled bipolar circuits (1991) (0)
Soista Initial Spice Initial Rise Fall Short-path Long-path Max Min Max Min Rise Fall Rise Fall (1999) (0)

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