Jerry Tersoff
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Most Influential Person Now
American physicist
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Physics
Jerry Tersoff's Degrees
- PhD Physics University of California, Berkeley
Why Is Jerry Tersoff Influential?
(Suggest an Edit or Addition)According to Wikipedia, Jerry Tersoff is a Research Staff Member at the IBM Thomas J. Watson Research Center. His work spans diverse topics in the theoretical understanding of surfaces, interfaces, electronic materials, epitaxial growth, and nanoscale devices. Throughout his career, his work has emphasized the use of simple models to understand complex behavior.
Jerry Tersoff's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Modeling solid-state chemistry: Interatomic potentials for multicomponent systems. (1989) (3209)
- Theory of the scanning tunneling microscope. (1985) (3124)
- New empirical approach for the structure and energy of covalent systems. (1988) (2693)
- Theory and Application for the Scanning Tunneling Microscope (1983) (1867)
- Empirical interatomic potential for carbon, with application to amorphous carbon. (1988) (1471)
- Empirical interatomic potential for silicon with improved elastic properties. (1988) (1202)
- New empirical model for the structural properties of silicon. (1986) (1072)
- Self-organization in growth of quantum dot superlattices. (1996) (1002)
- Carbon nanotubes as schottky barrier transistors. (2002) (943)
- Electrically Induced Optical Emission from a Carbon Nanotube FET (2003) (781)
- Schottky Barrier Heights and the Continuum of Gap States (1984) (697)
- Ambipolar electrical transport in semiconducting single-wall carbon nanotubes. (2001) (693)
- Shape transition in growth of strained islands: Spontaneous formation of quantum wires. (1993) (675)
- Competing relaxation mechanisms in strained layers. (1994) (644)
- Coarsening of Self-Assembled Ge Quantum Dots on Si(001) (1998) (546)
- Germanium Nanowire Growth Below the Eutectic Temperature (2007) (535)
- Structure and electronic transport in graphene wrinkles. (2012) (532)
- Scaling of excitons in carbon nanotubes. (2004) (493)
- Atom-selective imaging of the GaAs(110) surface. (1987) (444)
- Radial deformation of carbon nanotubes by van der Waals forces (1993) (438)
- Scanning tunneling microscopy (1987) (418)
- Structural properties of a carbon-nanotube crystal. (1994) (389)
- High-density integration of carbon nanotubes via chemical self-assembly. (2012) (317)
- Role of fermi-level pinning in nanotube schottky diodes (2000) (317)
- Sawtooth faceting in silicon nanowires. (2005) (311)
- Formation of Compositionally Abrupt Axial Heterojunctions in Silicon-Germanium Nanowires (2009) (298)
- Theory of semiconductor heterojunctions: The role of quantum dipoles (1984) (292)
- Dislocations and strain relief in compositionally graded layers (1993) (289)
- Critical island size for layer-by-layer growth. (1994) (286)
- Schottky barriers and semiconductor band structures. (1985) (280)
- Interface dynamics and crystal phase switching in GaAs nanowires (2016) (265)
- Diameter-independent kinetics in the vapor-liquid-solid growth of Si nanowires. (2006) (261)
- Electron-phonon interaction and transport in semiconducting carbon nanotubes. (2005) (251)
- Step-bunching instability of vicinal surfaces under stress. (1995) (243)
- Novel Length Scales in Nanotube Devices (1999) (234)
- Radiative lifetime of excitons in carbon nanotubes. (2005) (230)
- Chemical order in amorphous silicon carbide. (1994) (206)
- Kinetics of Individual Nucleation Events Observed in Nanoscale Vapor-Liquid-Solid Growth (2008) (196)
- Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films. (1996) (190)
- Band lineups at II-VI heterojunctions: Failure of the common-anion rule. (1986) (190)
- Surface-confined alloy formation in immiscible systems. (1995) (188)
- Negative-curvature fullerene analog of C60. (1992) (186)
- Cyclic growth of strain-relaxed islands. (1994) (184)
- Structure and energetics of the Si- SiO2 interface (1999) (181)
- Equilibrium alloy properties by direct simulation: Oscillatory segregation at the Si-Ge(100) 2 x 1 surface. (1989) (177)
- An off-normal fibre-like texture in thin films on single-crystal substrates (2003) (176)
- Drain voltage scaling in carbon nanotube transistors (2003) (172)
- SHAPE TRANSITION IN GROWTH OF STRAINED ISLANDS (1999) (169)
- Strain distributions and their influence on electronic structures of WSe2–MoS2 laterally strained heterojunctions (2018) (168)
- End-bonded contacts for carbon nanotube transistors with low, size-independent resistance (2015) (162)
- Carbon nanotube transistors scaled to a 40-nanometer footprint (2017) (159)
- Erratum: Modeling solid-state chemistry: Interatomic potentials for multicomponent systems (1990) (158)
- Carbon nanotube complementary wrap-gate transistors. (2013) (157)
- Atomic-scale transport in epitaxial graphene. (2012) (156)
- Periodically changing morphology of the growth interface in Si, Ge, and GaP nanowires. (2011) (154)
- Effect of exciton-phonon coupling in the calculated optical absorption of carbon nanotubes. (2005) (152)
- Approaching the ideal elastic strain limit in silicon nanowires (2016) (146)
- Contact resistance of carbon nanotubes (1999) (139)
- Carbon defects and defect reactions in silicon. (1990) (138)
- In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I. {Si(001) }/{Ge} (1996) (135)
- Running Droplets of Gallium from Evaporation of Gallium Arsenide (2009) (134)
- Nonuniform composition profile in In0.5Ga0.5As alloy quantum dots (2000) (134)
- Mobile ambipolar domain in carbon-nanotube infrared emitters. (2004) (132)
- Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors (2003) (131)
- Morphological instability theory for strained alloy film growth: The effect of compositional stresses and species-dependent surface mobilities on ripple formation during epitaxial film deposition (2001) (130)
- Barrierless formation and faceting of SiGe islands on Si(001). (2002) (129)
- Structure, growth kinetics, and ledge flow during vapor-solid-solid growth of copper-catalyzed silicon nanowires. (2010) (129)
- Energies of fullerenes. (1992) (125)
- Anomalous corrugations in scanning tunneling microscopy: Imaging of individual states. (1986) (124)
- Magnetic and electronic properties of Ni films, surfaces, and interfaces (1982) (120)
- Elementary processes in nanowire growth. (2011) (119)
- EQUILIBRIUM SHAPES AND PROPERTIES OF EPITAXIALLY STRAINED ISLANDS (1997) (119)
- Enhanced solubility of impurities and enhanced diffusion near crystal surfaces. (1995) (116)
- Visualizing band offsets and edge states in bilayer–monolayer transition metal dichalcogenides lateral heterojunction (2015) (116)
- From droplets to nanowires: dynamics of vapor-liquid-solid growth. (2009) (116)
- Stress-induced layer-by-layer growth of Ge on Si(100). (1991) (113)
- ENHANCED NUCLEATION AND ENRICHMENT OF STRAINED-ALLOY QUANTUM DOTS (1998) (104)
- Tight‐binding theory of heterojunction band lineups and interface dipoles (1986) (103)
- Origin of apparent critical thickness for island formation in heteroepitaxy. (2004) (102)
- Surface-stress-induced order in SiGe alloy films. (1990) (99)
- Stable Self-Catalyzed Growth of III-V Nanowires. (2015) (99)
- SELF-ORGANIZATION OF STEPS IN GROWTH OF STRAINED FILMS ON VICINAL SUBSTRATES (1998) (99)
- Bonding and structure of CoSi2 and NiSi2 (1983) (94)
- Properties of a continuous-random-network model for amorphous systems (1998) (93)
- Calculation of Schottky barrier heights from semiconductor band structures (1986) (91)
- ADATOM DENSITIES ON GAAS : EVIDENCE FOR NEAR-EQUILIBRIUM GROWTH (1997) (90)
- Coarsening, mixing, and motion: the complex evolution of epitaxial islands. (2007) (89)
- Nucleation of dislocations in SiGe layers grown on (001)Si (1994) (86)
- Negative differential resistance in nanotube devices (2000) (86)
- Atomic-Scale Variability and Control of III-V Nanowire Growth Kinetics (2014) (85)
- Deformation and scattering in graphene over substrate steps. (2012) (80)
- Lateral motion of SiGe islands driven by surface-mediated alloying. (2005) (79)
- Step-flow kinetics in nanowire growth. (2010) (76)
- Kinetic evolution and equilibrium morphology of strained islands. (2005) (76)
- Electronic structure and local atomic configurations of flat and stepped (111) surfaces of Ni and Cu (1981) (75)
- Low-frequency noise in nanoscale ballistic transistors. (2007) (73)
- Facet formation in strained Si1−x Gex films (1994) (72)
- Multiple functionality in nanotube transistors. (2002) (71)
- Electrostatic engineering of nanotube transistors for improved performance (2003) (71)
- Recent models of Schottky barrier formation (1985) (69)
- Interaction of threading and misfit dislocations in a strained epitaxial layer (1996) (67)
- Nature of the step-height transition on vicinal Si(001) surfaces. (1991) (67)
- Transition-metal impurities in semiconductors-their connection with band lineups and Schottky barriers. (1987) (66)
- Tunneling microscopy study of the graphite surface in air and water. (1986) (66)
- Dielectric response of semiconducting carbon nanotubes (2002) (65)
- Stress-Driven Alloy Decomposition during Step-Flow Growth. (1996) (64)
- Formation of metastable liquid catalyst during subeutectic growth of germanium nanowires. (2010) (64)
- Local equilibrium and global relaxation of strained SiGe/Si(001) layers (2006) (62)
- Summary Abstract: Failure of the common anion rule for lattice‐matched heterojunctions (1986) (62)
- Enhanced instability of strained alloy films due to compositional stresses (2000) (61)
- Quantum Statistics for Distinguishable Particles (1983) (60)
- Missing dimers and strain relief in Ge films on Si(100). (1992) (59)
- Self-organized growth of alloy superlattices (1999) (57)
- Glassy quasithermal distribution of local geometries and defects in quenched amorphous silicon. (1988) (56)
- Nonlifetime effects in photoemission linewidths (1983) (55)
- Nonlinear screening in multilayer graphene systems. (2011) (55)
- Stresses and first-order dislocation energetics in equilibrium Stranski-Krastanow islands (2001) (54)
- Structural properties of sp3-bonded hydrogenated amorphous carbon. (1991) (53)
- Origins and characteristics of the threshold voltage variability of quasiballistic single-walled carbon nanotube field-effect transistors. (2015) (51)
- Phase coexistence during surface phase transitions. (2001) (51)
- Mobility in semiconducting carbon nanotubes at finite carrier density. (2005) (50)
- Determination of size effects during the phase transition of a nanoscale Au-Si eutectic. (2009) (50)
- Sinuous step instability on the Si(001) surface. (1992) (49)
- Microscopic dynamics of silicon oxidation. (2002) (49)
- Prepyramid-to-pyramid transition of SiGe islands on Si(001) (2003) (48)
- Geometrical frustration in nanowire growth. (2011) (48)
- Measurement of the activation barrier to nucleation of dislocations in thin films. (1993) (48)
- Phase diagram of vicinal Si(001) surfaces. (1991) (48)
- Shape oscillations in growth of small crystals. (1993) (48)
- Valence force model for phonons in graphene and carbon nanotubes (2009) (47)
- Elastic properties of a network model of glasses. (1992) (45)
- The formation of disilicides from bilayers of Ni/Co and Co/Ni on silicon: Phase separation and solid solution (1986) (44)
- Surface Stress and Thermodynamic Nanoscale Size Selection (2002) (44)
- Heterojunction band lineups in Si-Ge alloys using spatially resolved electron-energy-loss spectroscopy. (1993) (44)
- Step energies and roughening of strained layers. (1995) (43)
- Phonon-mediated interlayer conductance in twisted graphene bilayers. (2012) (43)
- Morphology evolution during the growth of strained-layer superlattices (2000) (42)
- Investigating the lateral motion of SiGe islands by selective chemical etching (2006) (42)
- Stationary pulses of light in an atomic medium (42)
- Relaxation mechanism of Ge islands/Si(001) at low temperature (1995) (42)
- Nanotechnology: A barrier falls (2003) (41)
- Decomposition controlled by surface morphology during langmuir evaporation of GaAs. (2010) (41)
- Device modeling of long-channel nanotube electro-optical emitter (2004) (41)
- Method for the calculation of scanning tunneling microscope images and spectra. (1989) (41)
- Atomic scale calculations in materials science (1989) (40)
- Tip-dependent corrugation of graphite in scanning tunneling microscopy. (1990) (39)
- Oscillatory segregation at a metal alloy surface: Relation to ordered bulk phases. (1990) (38)
- Role of tip electronic structure in scanning tunneling microscope images. (1990) (36)
- ALLOY DECOMPOSITION DURING GROWTH DUE TO MOBILITY DIFFERENCES (1998) (36)
- Origin of quantum ring formation during droplet epitaxy. (2013) (35)
- Dislocation energetics in epitaxial strained islands (2000) (34)
- Anomalous smoothing preceding island formation during growth on patterned substrates. (2012) (32)
- Random-telegraph-signal noise and device variability in ballistic nanotube transistors. (2007) (31)
- Coherent Plasmon and Phonon-Plasmon Resonances in Carbon Nanotubes. (2017) (31)
- Stabilization of strained alloy film growth by a difference in atomic mobilities (2000) (30)
- Kinetic surface segregation and the evolution of nanostructures (2003) (30)
- Atomic scale studies of epitaxial growth processes using X-ray techniques (1996) (29)
- Growth pathways in ultralow temperature Ge nucleation from Au. (2012) (29)
- Adatom concentration on GaAs(001) during MBE annealing (1996) (28)
- Asymmetry and shape transitions of epitaxially strained islands on vicinal surfaces (2010) (28)
- Dynamically stable growth of strained-layer superlattices (2000) (27)
- Multiplicity of steady modes of nanowire growth. (2012) (27)
- Positioning of strained islands by interaction with surface nanogrooves. (2008) (25)
- Electromigration forces on ions in carbon nanotubes. (2005) (25)
- Growth kinetics of CoSi2 and Ge islands observed with in situ transmission electron microscopy (1999) (25)
- Self-assembly of ordered graphene nanodot arrays (2017) (25)
- Congruent evaporation temperature of GaAs(001) controlled by As flux (2010) (24)
- Atomic Resolution in Situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires. (2016) (24)
- Sample-dependent resolution in scanning tunneling microscopy. (1989) (24)
- Erratum: Dislocations and strain relief in compositionally graded layers [Appl. Phys. Lett. 62, 693 (1993)] (1994) (24)
- Metastable crystalline AuGe catalysts formed during isothermal germanium nanowire growth. (2012) (23)
- Competing step instabilities at surfaces under stress (2003) (23)
- Jumping-catalyst dynamics in nanowire growth. (2014) (23)
- Resistivity of the solid solutions (Co‐Ni)Si2 (1986) (22)
- Self-assembled superlattice by spinodal decomposition during growth. (2005) (22)
- Some properties of ReSi2 (1988) (22)
- Surface Crystallization of Liquid Au–Si and Its Impact on Catalysis (2018) (21)
- PRESENCE AND ABSENCE OF MAGNETISM IN THIN Ni FILMS (1982) (20)
- THEORY OF SCANNING TUNNELING MICROSCOPY (1993) (20)
- In situ transmission electron microscopy observations of the formation of self‐assembled Ge islands on Si (1998) (20)
- Conductance through multilayer graphene films. (2011) (20)
- Three-dimensional isocompositional profiles of buried SiGe/Si(001) Islands (2007) (20)
- Influence of supersaturation on surface structure. (2002) (20)
- Spinodal decomposition during step-flow growth (1997) (20)
- Effect of curvature and stress on reaction rates at solid interfaces (1998) (20)
- Reference levels for heterojunctions and Schottky barriers. (1986) (19)
- Shaping site-controlled uniform arrays of SiGe/Si(001) islands by in situ annealing (2009) (18)
- Self-organized quantum-wire lattice via step flow growth of a short-period superlattice. (2004) (18)
- Carbon nanotube deformation and collapse under metal contacts. (2014) (17)
- The Role of Surface Passivation in Controlling Ge Nanowire Faceting. (2015) (16)
- CONTINUUM THEORY FOR STRAINED EPITAXIAL ISLANDS (1997) (14)
- Existence of shallow facets at the base of strained epitaxial islands (2002) (14)
- Surface Stress and Self-Organization of Steps (1998) (14)
- High-brightness lasing at submicrometer enabled by droop-free fin light-emitting diodes (LEDs) (2020) (14)
- Scaling of Device Variability and Subthreshold Swing in Ballistic Carbon Nanotube Transistors (2015) (14)
- Wetting transition for carbon nanotube arrays under metal contacts. (2015) (14)
- Stress-induced roughening in epitaxial growth (1996) (13)
- Forces on charged defects in semiconductor heterostructures. (1990) (13)
- Stability of Solid State Reaction Fronts (1998) (13)
- Strain and the interpretation of band-lineup measurements. (1987) (13)
- Reading the footprints of strained islands (2006) (13)
- Au transport in catalyst coarsening and Si nanowire formation. (2014) (13)
- Ga droplet surface dynamics during Langmuir evaporation of GaAs (2011) (13)
- Interaction of helium with a corrugated surface. (1985) (13)
- Band Structure and Contact Resistance of Carbon Nanotubes Deformed by a Metal Contact. (2017) (12)
- Calculation of temperature effects on the equilibrium crystal shape of Si near (100). (1994) (12)
- Instability wavelength in strained-alloy epitaxy (2000) (12)
- Sensitivity of helium diffraction to surface geometry. (1985) (12)
- Ostwald Ripening of Self-Assembled Germanium Islands on Silicon(100) (1998) (12)
- Vapor-Liquid-Solid Etch of Semiconductor Surface Channels by Running Gold Nanodroplets. (2015) (11)
- Facet growth under stress: the limits of strained-layer stability. (2001) (11)
- Time evolution of the Ga droplet size distribution during Langmuir evaporation of GaAs(001) (2010) (10)
- Evolution of buried semiconductor nanostructures and origin of stepped surface mounds during capping (2006) (10)
- Core-level satellite structure in photoemission spectra of transition metals (1979) (10)
- Schottky-to-Ohmic crossover in carbon nanotube transistor contacts. (2013) (10)
- Symmetry breaking in shape transitions of epitaxial quantum dots (2013) (10)
- Electron-phonon effects and transport in carbon nanotubes (2004) (10)
- Facet Growth under Stress (2001) (10)
- Equilibrium Shapes of Small Strained Islands (1995) (9)
- ‘‘Pinning’’ of energy levels of transition‐metal impurities (1987) (9)
- Equilibrium phase diagrams for the elongation of epitaxial quantum dots into hut-shaped clusters and quantum wires (2014) (9)
- Interface magnetization: Cu films on Ni(100) (1982) (8)
- Optimal Thickness for Charge Transfer in Multilayer Graphene Electrodes (2014) (8)
- Evidence for a large valence-band offset at HgTe-CdTe heterojunctions. (1989) (7)
- The stability of triangular 'droplet' phases on Si(111) (2002) (7)
- Growth kinetics of Si and Ge nanowires (2009) (7)
- Island growth of Ge on Si(001) and CoSi2 on Si(111) studied with UHV electron microscopy (1999) (7)
- Suppression of intermixing in strain-relaxed epitaxial layers. (2010) (6)
- Equilibrium Shapes of Islands in Epitaxially Strained Solid Films (1998) (6)
- Equilibrium crystal shape of silicon near (001). (1993) (6)
- Nanotechnology: Less is more (2001) (6)
- Summary Abstract: Structure analysis of the GaAs(110) surface by scanning tunneling microscopy (1988) (6)
- Erratum: Morphology evolution during the growth of strained-layer superlattices [Phys. Rev. B62, 8397 (2000)] (2003) (6)
- CALCULATION OF MAGNETIZATION IN ORDERED Ni-Cu ALLOYS (1982) (6)
- Theory of Scanning Tunneling Microscopy and Spectroscopy (1990) (5)
- Structure of the silicon–oxide interface (2001) (5)
- Self-organized epitaxial growth of low-dimensional structures (1998) (4)
- Strain-driven mound formation of substrate under epitaxial nanoparticles. (2015) (4)
- Kinetic effects in heteroepitaxial growth (2002) (4)
- Novel GaAs surface phases via direct control of chemical potential (2016) (4)
- LeGoues, Mooney, and Tersoff reply. (1994) (4)
- Surface morphology and alloy ordering in epitaxial growth of SiGe. (1993) (4)
- Chemically induced grain boundary migration in doped polycrystalline silicon films (1988) (3)
- Response to “Comment on ‘Contact resistance of carbon nanotubes’ ” [Appl. Phys. Lett. 75, 4028 (1999)] (1999) (3)
- Exciton-phonon effects in carbon nanotube optical absorption (2004) (3)
- Chip-Scale Droop-Free Fin Light-Emitting Diodes Using Facet-Selective Contacts. (2021) (3)
- The Theory of Schottky Barriers: Controversy or Consensus? (1989) (3)
- Mapping the surface phase diagram of GaAs(001) using droplet epitaxy (2019) (3)
- Reversible Decomposition of Single-Crystal Methylammonium Lead Iodide Perovskite Nanorods (2020) (2)
- Electroluminescence in Carbon Nanotubes (2005) (2)
- (Invited) Fabrication and Properties of Abrupt Si-Ge Heterojunction Nanowire Structures (2010) (2)
- Tuning the Doping of Epitaxial Graphene on a Conventional Semiconductor via Substrate Surface Reconstruction. (2020) (2)
- SELF-ORGANIZED ISLAND ARRAYS IN SiGe/Si MULTILAYERS (1998) (2)
- Erratum: Novel Length Scales in Nanotube Devices [Phys. Rev. Lett. 83, 5174 (1999)] (2002) (2)
- Grinstein et al. Reply (1999) (2)
- 1 – THEORY OF SCANNING TUNNELING MICROSCOPY (1993) (2)
- Atomic Scale Calculations in Materials Science: Symposium Held November 28 - December 1, 1988, Boston, Massachusetts, U.S.A. (1989) (1)
- Structure and Energetics of the Interface Between Si and Amorphous SiO2 (2001) (1)
- Thermal Carrier Injection into Ambipolar Carbon Nanotube Field Effect Transistors (2003) (1)
- sp ↔ d charge transfer at transition- and noble-metal surfaces: A reply (1982) (1)
- Simultaneous Ge Nanowire Growth Using Solid and Liquid Au Catalysts (2007) (1)
- Electronic and Magnetic Properties of Transition-Metal Surfaces, Interfaces and Overlayers (1985) (1)
- Publisher’s Note: Phonon-Mediated Interlayer Conductance in Twisted Graphene Bilayers [Phys. Rev. Lett.109, 236604 (2012)] (2012) (1)
- Simple linear response model for predicting energy band alignment of two-dimensional vertical heterostructures (2020) (1)
- High Brightness Lasing at Sub-micron Enabled by Droop-Free Fin Light-Emitting Diodes. (2020) (1)
- Growth of SiGe epitaxial quantum dots on patterned Si (001) surfaces by in situ annealing of initially conformal layers (2018) (1)
- Resolution in Scanning Tunneling Microscopy (1988) (0)
- Unusual Germanium Nanowire Crystal Structures Formed During Low Temperature Catalytic Growth (2012) (0)
- Technologically relevant, in theory (2011) (0)
- Enhanced Impurity Solubility and Diffusion Near Surfaces (1995) (0)
- Heterojunction band offsets in GE-SI alloys from EELS (1992) (0)
- Final Report for Contract N00014-84-C-0396 (IBM Corporation) (1992) (0)
- Some properties of ReSi (1988) (0)
- Effect of Catalyst Composition on Si Nanowire Growth Kinetics (2009) (0)
- Core-Level Satellites Structure in Photoemission Spectra of Transient Metals | NIST (1979) (0)
- ELECTRONIC MAGNETIC AND CHEMICAL PROPERTIES OF FILMS, SURFACES AND ALLOYS (1982) (0)
- CALCULATION OF ELECTRONIC AND MAGNETIC PROPERTIES OF Ni FILMS ON Cu (100) (1981) (0)
- Visualizing Anisotropic Strain and Electronic Structures in WSe$_{\mathrm{2}}$-MoS$_{\mathrm{2}}$ Lateral Heterojunctions (2017) (0)
- Screening and electrostatic doping in multilayer graphene systems (2012) (0)
- Erratum: Self-assembly of ordered graphene nanodot arrays (2017) (0)
- “Pinning” of Transition-Metal Impurity Levels (1988) (0)
- Theoretical Aspects of Scanning Tunneling Microscopy (1990) (0)
- Visualizing Anisotropic Strain and Electronic Structures in WSe 2 -MoS 2 Lateral Heterojunctions (2017) (0)
- MORPHOLOGICAL INSTABILITY IN STRAINED ALLOY FILMS (2002) (0)
- Role of Stress in the Self-Assembly of Nanostructures (1995) (0)
- Phase Transformations in Nanoscale Si-Au, Ge-Au and SiGe-Au Systems (2010) (0)
- Metal selection criteria for enhancing electrical conductance of metal-graphene junctions (2011) (0)
- Island growth from a surface instability in the GeSi system (2018) (0)
- Self-assembly of ordered graphene nanodot arrays (2017) (0)
- New Insights into the Nanowire Nucleation and Growth Kinetics (2008) (0)
- Si and Ge Nanowire Growth Mechanisms Observed using In Situ Microscopy (2006) (0)
- Structural control during the growth of Si, Ge and hybrid nanowires (2006) (0)
- Step bunching and ordering induced by step-edge barriers (2000) (0)
- Fast pit filling and 3D island formation during Ge deposition on pit-patterned Si(001) substrates (2012) (0)
- Nanofabrication of Quantum Wires and Quantum Wells by Self-Organizing Step Flow Growth (1997) (0)
- Invited) Microscopic Modeling of Contact Resistance in Carbon Nanotubes (2013) (0)
- Self-Organized Step Flow Growth of Quantum-Wire Superlattice in Strain-compensated Multilayer Film (2004) (0)
- Calculated Properties of Carbon Defects in Silicon (1990) (0)
- A pr 2 00 4 Scaling of excitons in carbon nanotubes (0)
- Improving step bunch ordering by tuning the interplay between thermodynamic and kinetic factors (2007) (0)
- Growth and surface structure of silicon nanowires observed in real time in the electron microscope (2005) (0)
- 0 20 54 45 v 1 2 1 M ay 2 00 2 Multiple Functionality in Nanotube Transistors (2021) (0)
- 28p-WB-4 Dynamics and Pattern Formation in Step-Flow Growth (1997) (0)
- Numerical simulations of VLS heteroepitaxial nanowire growth (2009) (0)
- Erratum: Self-assembly of ordered graphene nanodot arrays (2017) (0)
- Exciton radiative lifetime in carbon nanotubes (2006) (0)
- Modeling the complex evolution of self-assembled quantum dots (2008) (0)
- Tersoffet al. Reply: Comparison of Continuum and Step Models for SiGe Islands: (2003) (0)
- Correction to “Reversible Decomposition of Single-Crystal Methylammonium Lead Iodide Perovskite Nanorods” (2021) (0)
- Unified View of Schottky Barrier Formation (1985) (0)
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