Jerry Woodall

Q: What Schools Are Affiliated With Jerry Woodall

Jerry Woodall is affiliated with the following schools: University of California, Berkeley, University of California, Davis, Stanford University, Purdue University, Cornell University

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Jerry Woodall

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#1767

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#2534

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#41

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#42

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#236

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#239

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#31

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Jerry Woodall

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#3585

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#3765

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#1335

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#20

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#3281

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#600

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Engineering
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Jerry Woodall's Degrees

PhD Electrical Engineering Stanford University
Masters Electrical Engineering Stanford University
Bachelors Electrical Engineering University of California, Berkeley

Why Is Jerry Woodall Influential?

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According to Wikipedia, Jerry M. Woodall is a professor of electrical and computer engineering at the University of California, Davis who is widely known for his revolutionary work on LEDs and semiconductors. Over the course of his career, he has published close to 400 scientific articles and his work has directly contributed to the development of major technologies that are used around the world, such as TVs, optical fibers, and mobile phones. Woodall currently holds over 80 U.S. patents for a variety of inventions and has received prestigious awards from IBM, NASA, and the U.S. President for his contributions to science, technology, and humanity.

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Jerry Woodall's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Structure of GaAs(001) ( 2 × 4 ) − c ( 2 × 8 ) Determined by Scanning Tunneling Microscopy (1988) (400)
Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy (1990) (389)
Macroelectronics: Perspectives on Technology and Applications (2005) (326)
Schottky barriers: An effective work function model (1981) (301)
Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area (1989) (291)
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures (1990) (232)
Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers (1998) (208)
Unpinned (100) GaAs surfaces in air using photochemistry (1986) (203)
Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers (1988) (191)
The effect of fluorescent wavelength shifting on solar cell spectral response (1979) (184)
An In0.15Ga0.85As/GaAs pseudomorphic single quantum well HEMT (1985) (178)
Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy (1981) (176)
Liquid phase-enabled reaction of Al-Ga and Al-Ga-In-Sn alloys with water (2011) (176)
Carrier lifetime versus anneal in low temperature growth GaAs (1993) (161)
Structure and recombination in InGaAs/GaAs heterostructures (1988) (150)
EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1‐xAlxAs p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY (1967) (137)
Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers (1991) (133)
GaAs metallization: Some problems and trends (1981) (123)
Effective barrier heights of mixed phase contacts: Size effects (1982) (118)
Fermi-Level Pinning by Misfit Dislocations at GaAs Interfaces (1983) (117)
A new concept for solar energy thermal conversion (1975) (115)
Low-Temperature Grown III-V Materials (1995) (110)
High‐efficiency Ga1−xAlxAs–GaAs solar cells (1972) (110)
Lattice contraction due to carbon doping of GaAs grown by metalorganic molecular beam epitaxy (1990) (106)
An isothermal etchback‐regrowth method for high‐efficiency Ga1−xAlxAs‐GaAs solar cells (1977) (101)
EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°K (1966) (98)
Photon recycling in semiconductor lasers (1974) (97)
Photoreflectance study of the surface Fermi level at (001) n‐ and p‐type GaAs surfaces (1992) (85)
Size dependence of ’’effective’’ barrier heights of mixed‐phase contacts (1982) (84)
Elimination of interface defects in mismatched epilayers by a reduction in growth area (1988) (81)
GaAsGaAlAs heterojunction transistor for high frequency operation (1972) (80)
Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces (1991) (80)
Substrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAs (1991) (78)
High efficiency and low threshold current strained V‐groove quantum‐wire lasers (1994) (74)
Cross‐sectional imaging and spectroscopy of GaAs doping superlattices by scanning tunneling microscopy (1992) (74)
Ga/sub 1-x/Al/sub x//As--GaAs p-p-n heterojunction solar cells (1973) (72)
Photoassisted Electrolysis of Water by Visible Irradiation of a p-Type Gallium Phosphide Electrode (1977) (68)
1.3- mu m P-i-N photodetector using GaAs with As precipitates (GaAs:As) (1991) (66)
Molecular beam epitaxy of nonstoichiometric semiconductors and multiphase material systems (1996) (64)
Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric (2007) (64)
Photoelectrolysis of Water with Semiconductor Materials (1977) (64)
BAND STRUCTURE AND DIRECT TRANSITION ELECTROLUMINESCENCE IN THE In1−xGaxP ALLOYS (1968) (63)
Highly carbon-doped p-type Ga0.5In0.5As and Ga0.5In0.5P by carbon tetrachloride in gas-source molecular beam epitaxy (1991) (62)
High carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs (1991) (60)
Photoreflectance of GaAs and Ga0.82Al0.18As at elevated temperatures up to 600 °C (1988) (60)
Static and dynamic characterization of large-area high-current-density SiC Schottky diodes (1998) (59)
GHz bandwidth GaAs light-emitting diodes (1999) (55)
Formation of two‐dimensional arsenic‐precipitate arrays in GaAs (1992) (54)
Dependence of the photoreflectance of semi-insulating GaAs on temperature and pump chopping frequency (1988) (54)
Low‐resistance nonalloyed ohmic contacts to Si‐doped molecular beam epitaxial GaAs (1985) (54)
Superconducting InGaAs junction field‐effect transistors with Nb electrodes (1989) (54)
Improved photoluminescence of organometallic vapor phase epitaxial AlGaAs using a new gettering technique on the arsine source (1983) (53)
Novel low‐resistance ohmic contact to n‐type GaAs using Cu3Ge (1994) (53)
A new technique for gettering oxygen and moisture from gases used in semiconductor processing (1982) (50)
Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well (1991) (50)
Summary Abstract: Are they really Schottky barriers after all? (1982) (49)
Silicon diffusion at polycrystalline‐Si/GaAs interfaces (1985) (49)
Characterization of photochemically unpinned GaAs (1988) (49)
GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitates (1991) (48)
Contact reactions in Pd/GaAs junctions (1979) (48)
Arsenic cluster dynamics in doped GaAs (1992) (48)
Arsenic precipitates in Al0.3Ga0.7As/GaAs multiple superlattice and quantum well structures (1992) (47)
High-speed 1.3 mu m GaInAs detectors fabricated on GaAs substrates (1988) (47)
Temperature‐dependent chemical and electronic structure of reconstructed GaAs (100) surfaces (1992) (46)
A dual-metal-trench Schottky pinch-rectifier in 4H-SiC (1998) (45)
Incoherent interface of InAs grown directly on GaP(001) (1996) (43)
Crossover from tunneling to metallic behavior in superconductor-semiconductor contacts (1990) (43)
LVM spectroscopy of carbon and carbon-hydrogen pairs in GaAs grown by MOMBE (1991) (42)
Proximate capless annealing of GaAs using a controlled‐excess As vapor pressure source (1981) (41)
Phonon shifts and strains in strain‐layered (Ga1−xInx)As (1987) (40)
Use of nonstoichiometry to form GaAs tunnel junctions (1997) (40)
Enhanced electro‐optic properties of low‐temperature‐growth GaAs and AlGaAs (1993) (39)
Self-forming InAs/GaP quantum dots by direct island growth (1998) (38)
Solar Blind Photodetectors Enabled by Nanotextured β-Ga2O3 Films Grown via Oxidation of GaAs Substrates (2017) (38)
The (001) surface of molecular‐beam epitaxially grown GaAs studied by scanning tunneling microscopy (1988) (38)
Summary Abstract: The MBE growth of GaAs free of oval defects (1984) (37)
Ultrafast‐lifetime quantum wells with sharp exciton spectra (1995) (37)
Volatile metal‐oxide incorporation in layers of GaAs, Ga1−xAlxAs and related compounds grown by molecular beam epitaxy (1981) (36)
Local bonding and electronic structure obtained from electron energy loss scattering (1987) (36)
Liquid Phase Epitaxial Growth of Ga1 − x Al x As1 (1969) (36)
Digital communications above 1 Gb/s using 890-nm surface-emitting light-emitting diodes (2001) (36)
Unpinned Schottky barrier formation at metal–GaAs interfaces (1988) (35)
Effects of N2, O2, and H2O on GaAs passivated by photowashing or coating with Na2S⋅9H2O (1988) (35)
Band bending and interface states for metals on GaAs (1988) (35)
InP/InGaAs heterojunction bipolar transistors grown by gas-source molecular beam epitaxy with carbon-doped base (1992) (34)
Arsenic precipitate accumulation and depletion zones at AlGaAs/GaAs heterojunctions grown at low substrate temperature by molecular beam epitaxy (1992) (34)
Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1−xP (1991) (33)
Photoemission spectroscopy of GaAs:As photodiodes (1992) (33)
Fermi level pinning and chemical interactions at metal–InxGa1−xAs(100) interfaces (1986) (32)
Low‐temperature formation of metal/molecular‐beam epitaxy‐GaAs(100) interfaces: Approaching ideal chemical and electronic limits (1989) (32)
Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure (1992) (31)
Solution grown Ga1−xAlxAs superlattice structures (1972) (31)
In situ photoreflectance study of the effects of sputter/annealing on the Fermi level at (001) n‐ and p‐type GaAs surfaces (1991) (31)
Absence of Fermi level pinning at metal‐InxGa1−xAs(100) interfaces (1986) (30)
Photoelectrochemical passivation of GaAs surfaces (1983) (30)
Outlooks for GaAs terrestrial photovoltaics (1975) (30)
Optical emission properties of semi‐insulating GaAs grown at low temperatures by molecular beam epitaxy (1992) (29)
Tunneling spectroscopy of midgap states induced by arsenic precipitates in low-temperature-grown GaAs (1993) (29)
Carbon doping of GaP, GaInP, and AlInP in metalorganic molecular beam epitaxy using methyl and ethyl precursors (1991) (28)
Nature of band bending at semiconductor surfaces by contactless electroreflectance (1992) (28)
Guided self-assembly of Au nanocluster arrays electronically coupled to semiconductor device layers (2000) (28)
Solar absorbing surfaces of anodized dendritic tungsten (1978) (27)
Enhanced diffusion in nonstoichiometric quantum wells and the decay of supersaturated vacancy concentrations (1996) (27)
GaAs, AlGaAs, and InGaAs epilayers containing As clusters: semimetal/semiconductor composites (1993) (27)
Effect of defect density on the electrical characteristics of n-type GaN Schottky contacts (1999) (27)
High‐density optical storage based on nanometer‐size arsenic clusters in low‐temperature‐growth GaAs (1992) (26)
Defective Heterojunction Models (1986) (26)
Gas-source molecular beam epitaxial growth, characterization, and light-emitting diode application of InxGa1-xP on GaP(100) (1993) (26)
Photoluminescent properties of GaAs–GaAlAs, GaAs–oxide, and GaAs–ZnS heterojunctions (1979) (25)
THE ROLE OF EXCESS ARSENIC IN INTERFACE MIXING IN LOW-TEMPERATURE-GROWN ALAS/GAAS SUPERLATTICES (1995) (25)
Experimental observation of a minority electron mobility enhancement in degenerately doped p‐type GaAs (1993) (25)
High resolution x‐ray diffraction analysis of annealed low‐temperature gallium arsenide (1992) (25)
III-V Compounds and Alloys: An Update (1980) (24)
Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctions (1983) (24)
Simulation assisted design of a gallium phosphide n–p photovoltaic junction (2010) (24)
Isothermal Solution Mixing Growth of Thin Ga1 − x Al x As Layers (1971) (24)
Air stabilized (001) p‐type GaAs fabricated by molecular beam epitaxy with reduced surface state density (1994) (24)
Precipitation in Fe‐ or Ni‐implanted and annealed GaAs (1994) (24)
Inhibited oxidation in low‐temperature grown GaAs surface layers observed by photoelectron spectroscopy (1996) (24)
Stability of a low-temperature grown GaAs surface layer following air exposure using tunneling microscopy (1996) (23)
Electromodulation study of GaAs with excess arsenic (1992) (23)
Electric field distributions in a molecular‐beam epitaxy Ga0.83Al0.17As/GaAs/GaAs structure using photoreflectance (1989) (23)
InP/InGaAs double heterojunction bipolar transistors incorporating carbon-doped bases and superlattice graded base-collector junctions (1993) (22)
Photoluminescent characterization of GaAs solar cells (1979) (22)
Volatile metal oxide incorporation in layers of GaAs and Ga1−xAlxAs grown by molecular beam epitaxy (1981) (22)
The Effect of Growth Orientation on the Crystal Perfection of Horizontal Bridgman Grown GaAs (1971) (22)
Recent Results on Splitting Water with Aluminum Alloys (2008) (21)
Microstructure characterization of Cu3Ge/n‐type GaAs ohmic contacts (1994) (21)
Cross‐sectional scanning tunneling microscopy of epitaxial GaAs structures (1993) (21)
The formation of Ga1−xAlxAs layers on the surface of GaAs during continual dissolution into Ga‐Al‐As solutions (1979) (20)
Voltage‐controlled photoetching of GaAs (1981) (20)
Photoreflectance study of Fermi level changes in photowashed GaAs (1990) (20)
Gallium arsenide deep-level optical emitter for fibre optics (2003) (20)
An ohmic nanocontact to GaAs (1999) (19)
Experimental comparison of strained quantum‐wire and quantum‐well laser characteristics (1994) (19)
Effect of iso-electronic dopants on the dislocation density of GaAs (1988) (19)
ERRATA: EFFICIENT ELECTROLUMINESCENCE FROM InP DIODES GROWN BY LIQUID‐PHASE EPITAXY (1970) (19)
Arsenic‐ and metal‐induced GaAs interface states by low‐energy cathodoluminescence spectroscopy (1988) (19)
The Science and Technology of Al-Ga Alloys as a Material for Energy Storage, Transport and Splitting Water (2007) (18)
Studies of GaAs–oxide interfaces with and without Si interlayer (1990) (18)
Temperature Dependence of Quantized States in Strained-Layer In0.21Ga0.79As/GaAs Single Quantum Well (1994) (18)
Arsenic cluster engineering for excitonic electro‐optics (1993) (18)
Ga/1-x/Al/x/As LED structures grown on GaP substrates. (1972) (18)
Results of a gallium phosphide photovoltaic junction with an AR coating under concentration of natural sunlight (2011) (18)
Ohmic nanocontacts to GaAs using undoped and p-doped layers of low-temperature-grown GaAs (2000) (18)
Indirect transitions, free and impurity-bound excitons in gallium phosphide: A revisit with modulation and photoluminescence spectroscopy (1997) (17)
Electrical and microstructural characteristics of Ge/Cu ohmic contacts to n -type GaAs (1997) (17)
Optical characterization of compound semiconductor alloys (1974) (17)
Elevated temperature low energy ion cleaning of GaAs (1983) (17)
Metal/(100) GaAs interface: Case for a metal‐insulator‐semiconductor‐like structure (1990) (17)
Evidence for misfit dislocation-related carrier accumulation at the InAs/GaP heterointerface (1998) (17)
MAGNETIC AND MAGNETORESISTANCE MEASUREMENTS ON IRON-BASED NANOCLUSTERS IN IN0.53GA0.47AS (1997) (17)
n‐InAs/GaAs heterostructure superconducting weak links with Nb electrodes (1986) (16)
Oxide Passivation of Photochemically Unpinned GaAs (1988) (15)
Incorporation of Excess Arsenic in GaAs and AlGaAs Epilayers Grown at Low Substrate Temperatures by Molecular Beam Epitaxy (1991) (15)
Structure and chemical composition of water‐grown oxides of GaAs (1990) (15)
Photoluminescence Excitation Spectroscopy for In-Line Optical Characterization of Crystalline Solar Cells (2013) (15)
Low‐resistivity p‐type ZnSe through surface Fermi level engineering (1991) (15)
Efficient Green Electroluminescence from GaP p‐n Junctions Grown by Liquid‐Phase Epitaxy (1968) (15)
Quasi-direct UV/blue GaP avalanche photodetectors (2004) (15)
A quantitative conduction model for a low-resistance nonalloyed ohmic contact structure utilizing low-temperature-grown GaAs (2000) (15)
Electrical and structural properties of Be‐ and Si‐doped low‐temperature‐grown GaAs (1995) (15)
Interface states and Schottky barrier formation at metal/GaAs junctions (1989) (14)
Investigation of interface intermixing and roughening in low‐temperature‐grown AlAs/GaAs multiple quantum wells during thermal annealing by chemical lattice imaging and x‐ray diffraction (1995) (14)
Uniaxial stress study of the quantum transitions in a strained layer (001) In0.21Ga0.79As/GaAs single quantum well (1992) (14)
Operation and device applications of a valved‐phosphorus cracker in solid‐source molecular‐beam epitaxy (1995) (14)
Electrochemical capacitance voltage profiling of the narrow band gap semiconductor InAs (2000) (14)
LPE growth of GaAs-Ga/1-x/Al/x/As solar cells (1977) (14)
Optical gain and losses of epitaxial and diffused GaAs injection lasers (1965) (14)
Photoreflectance study of electric field distributions in semiconductors heterostructures grown on semi-insulating substrates (1990) (13)
Transport properties of a superconductor-semiconductor ohmic contact (1987) (13)
Reflection anisotropy spectroscopy study of the near surface electric field in low-temperature grown GaAs (001) (1997) (13)
Cu3Ge ohmic contacts to n-type GaAs (1996) (13)
Increased range of Fermi‐level stabilization energy at metal/melt‐grown GaAs(100) interfaces (1991) (13)
Raman scattering characterization of Ga1−xAlxAs/GaAs heterojunctions: Epilayer and interface (1982) (13)
Inhomogeneous and wide range of barrier heights at metal/molecular-beam epitaxy GaAs(100) interfaces observed with electrical measurements (1992) (12)
Abstract: Electrical properties of the Ga–GaAs interface immersed in electrolytic solutions (1978) (12)
Improved GaAs solar cells with very thin junctions (1976) (12)
Conformal antireflective coatings on a textured tungsten surface (1978) (12)
Valence‐band‐edge shift due to doping in p+ GaAs (1991) (12)
The Polycrystalline‐Si Contact to GaAs (1986) (12)
The continuing drama of the semiconductor interface (1993) (11)
Controlled low barrier height n+‐InGaAs/n‐GaAs pseudomorphic heterojunction Schottky diodes (1985) (11)
Contacts to GaAs Devices (1987) (11)
Behavior of a new ordered structural dopant source in InAs/(001) GaP heterostructures (1999) (11)
Gallium oxide nanowires for UV detection with enhanced growth and material properties (2020) (11)
High-efficiency Ga1-xAlxAs-GaAs solar cells (1990) (11)
Scanning Tunneling Microscopy and Spectroscopy of Arsenic Antisite Defects in GaAs (1993) (11)
Temporal and spectral characteristics of back-illuminated InGaAs metal-semiconductor-metal photodetectors (1996) (10)
Low surface recombination velocity and contact resistance using p+/p carbon‐doped GaAs structures (1990) (10)
Temperature-dependent transport properties of InAs films grown on lattice-mismatched GaP (2000) (10)
The compensation and depletion behavior of iron doped GaAs grown by molecular beam epitaxy (1996) (10)
Semiconductor heterostructure weak links for Josephson and superconducting FET applications (1987) (10)
Continuous stimulated emission from GaAs diodes at 77°K (1963) (10)
Structural analysis of as-deposited and annealed low-temperature gallium arsenide (1993) (10)
Two-dimensional arsenic-precipitate structures in GaAs (1993) (10)
SOME EFFECTS OF Zn DIFFUSION ON Mn‐DOPED GaAs (1966) (10)
The frequency behavior of InGaAs-AlInAs metal-semiconductor-metal photodetectors at low bias voltages for data communication applications (1992) (9)
Interface and contact structures for nanoelectronic devices using assemblies of metallic nanoclusters, conjugated organic molecules and chemically stable semiconductor layers (2000) (9)
The Electrical and Optical Properties of GaAs with as Precipitates (GaAs:As) (1991) (9)
Temperature‐dependent composition, ordering, and band bending at GaP(100) surfaces (1993) (9)
Reduced reverse bias current in Al–GaAs and In0.75Ga0.25As–GaAs junctions containing an interfacial arsenic layer (1987) (9)
Strategies for improving flow rate control of hydrogen generated by Al-rich alloys for on-board applications (2019) (9)
Nanoelectronic device applications of a chemically stable GaAs structure (1999) (9)
Gallium-arsenide deep-level tunnel diode with record negative conductance and record peak current density (2004) (9)
Technique for producing ’’good’’ GaAs solar cells using poor‐quality substrates (1975) (9)
Intensity and spatial modulation of spontaneous emission in GaAs by field aperture selecting transport (2003) (8)
Surface and interface states for GaAs(100) (1×1) and (4×2)‐c(8×2) reconstructions (1992) (8)
Electrical characteristics and thermal stability of W, WSiN, and Nb contacts to p- and n-type GaN (1999) (8)
Comparative study of minority electron properties in p+‐GaAs doped with beryllium and carbon (1992) (8)
Metal-insulator-semiconductor structure on low-temperature grown GaAs (2006) (8)
Molecular beam epitaxy of high‐quality, nonstoichiometric multiple quantum wells (1996) (8)
Use of annealed low‐temperature grown GaAs as a selective photoetch‐stop layer (1996) (8)
Masked, anisotropic thermal etching and regrowth for in situ patterning of compound semiconductors (1987) (8)
Temperature‐dependent formation of interface states and Schottky barriers at metal/molecular‐beam epitaxy GaAs(100) junctions (1990) (8)
PHOTOCONDUCTIVELY SWITCHED ANTENNAS FOR MEASURING TARGET RESONANCES (1994) (8)
Superparamagnetic behavior of Fe3GaAs precipitates in GaAs (1997) (8)
VIA-8 high-performance GaInAs interdigitated-metal-semiconductor-metal (IMSM) 1.3-µm photodetector grown on a GaAs substrate (1987) (7)
Electronic structure of metal/semiconductor interfaces from cathodoluminescence and soft X-ray photoemission spectroscopies (1993) (7)
High voltage GaInP/GaAs dual-material Schottky rectifiers (1997) (7)
Cross-Sectional Scanning Tunneling Microscopy of III-V Semiconductor Structures (1994) (7)
Si diffusion and segregation in low-temperature grown GaAs (1993) (7)
Extreme radiation hardness and light-weighted thin-film indium phosphide solar cell and its computer simulation (2003) (7)
A hybrid epitaxy method for InAs on GaP (2004) (7)
Growth and transport properties of thin Bi films on InP(110) (1996) (7)
Oxidation of GaAs substrates to enable β-Ga2O3 films for sensors and optoelectronic devices (2017) (7)
Magnesium gallate spinel: a substrate for the direct liquid‐phase epitaxial growth of (Ga,Al)As (1972) (7)
Reflection anisotropy spectroscopy study of the near-surface electric fields in undoped, n- and p-doped low-temperature grown GaAs (001) (1998) (7)
Metal/GaAs interface chemical and electronic properties: GaAs orientation dependence (1990) (7)
Photomodulation study of partially strained InxGa1-xAs layers (1993) (7)
Electrical properties of metal-diamond-like-nanocomposite (Me-DLN) contacts to 6H SiC (1997) (6)
High‐frequency operation of heavily carbon‐doped Ga0.51In0.49P/GaAs surface‐emitting light‐emitting diodes grown by metalorganic molecular beam epitaxy (1991) (6)
SiC Power Electronic Devices, MOSFETs and Rectifiers (1999) (6)
Pulse laser deposition fabricated InP/Al-ZnO heterojunction solar cells with efficiency enhanced by an i-ZnO interlayer (2015) (6)
Nondestructive characterization of Ga1−xAlxAs–GaAs interfaces using nuclear profiling (1981) (6)
Novel GaAs photodetector with gain for long wavelength detection (1995) (6)
Study on the liquid phase-derived activation mechanism in Al-rich alloy hydrolysis reaction for hydrogen production (2022) (6)
Fermi level pinning at epitaxial Si on GaAs(100) interfaces (1991) (6)
Nonalloyed ohmic contacts to heavily Be‐doped GaP and InxGa1−xP (1996) (6)
IVA-7 a new high purity Si doping source for MBE grown GaAs devices (1983) (5)
n+ InGaAs/nGaAs heterojunction Schottky diodes with low barriers controlled by band offset and doping level (1985) (5)
A New Technique for Terminating Liquid Phase Epitaxial Growth (1972) (5)
Electrical characteristics of nearly relaxed InAs/GaP heterojunctions (1997) (5)
Mechanism of Hydrogen Generation via Water Reaction with Aluminum Alloys (2010) (5)
Contactless electromodulation for in situ characterization of semiconductor processing (1993) (5)
Design Guidelines for True Green LEDs and High Efficiency Photovoltaics Using ZnSe/GaAs Digital Alloys (2010) (5)
Stimulated emission from Ga 1-x Al x As diodes at 77°K (1968) (5)
Interface studies of molecular beam epitaxy (MBE) grown ZnSe–GaAs heterovalent structures (2020) (5)
Base recombination of high performance InGaAs/InP HBT's (1993) (4)
Summary Abstract: Surface treatment and interface properties: What really matters? (1984) (4)
Photodiode characteristics and band alignment parameters of epitaxial Al0.5Ga0.5P (2009) (4)
Surface Fermi level engineering: Or there is more to Schottky barriers than just making diodes and field effect transistor gates (1991) (4)
Photoemission spectroscopy of Al0.27Ga0.73As:As photodiodes (1993) (4)
Field-effect transistors on molecular beam epitaxy GaP (2007) (4)
Characterization of strain at Ga1−xAlxAs–GaAs interfaces using electrolyte electroreflectance (1980) (4)
Semiconductor Device research Using Non-Lattice Matched Structures (1988) (4)
Layered Growth of Lattice-Mismatched GaxIn1−xP on GaP Substrates by Liquid Phase Epitaxy (2014) (4)
An isothermal etchback-regrowth method for high-efficiency Ga1−xAlxAsGaAs solar cells☆ (1990) (4)
Chemical and electronic properties of Al/[vicinal GaAs(100)] and Au/[vicinal GaAs(100)] interfaces (1992) (4)
Spontaneous delamination via compressive buckling facilitates large‐scale β‐Ga2O3 thin film transfer from reusable GaAs substrates (2017) (4)
Correlation of interface chemistry, barrier height, and step density for Al on vicinal GaAs(100) surfaces (1991) (4)
Characterization of planar antennas fabricated on GaAs epilayers containing As clusters for picosecond short-pulse applications (1993) (3)
Digital communications using 890-nm surface-emitting light-emitting diodes above 1 Gbit/s (2000) (3)
Metal contacts to III‐V semiconductors (1986) (3)
Gallium-arsenide deep-level PIN tunnel diode with very negative conductance (2003) (3)
Growth temperature dependence of transport properties of InAs epilayers grown on GaP (2000) (3)
InGaP/GaAs/InGaP double‐heterojunction bipolar transistors grown by solid‐source molecular‐beam epitaxy with a valved phosphorus cracker (1996) (3)
Graphitized carbon on GaAs(100) substrates (2011) (3)
Comment on ‘‘Mechanism responsible for the semi‐insulating properties of low‐temperature‐growth GaAs’’ [Appl. Phys. Lett. 65, 3002 (1994)] (1995) (3)
Efficient electroluminescence from GaAs diodes at 300° K (1966) (3)
Is the ‘Finite Bias Anomaly’ in planar GaAs-superconductor junctions caused by point-contact-like structures? (1999) (3)
Dopant Fluctuations and Quantum Effects in Sub-0.1um CMOS (1997) (3)
MBE Growth and Properties of Fe Films on Lattice-Matched InxGa1−xAs Films (1987) (3)
Development of ZnO-InP heterojunction solar cells for thin film photovoltaics (2014) (3)
InP/InGaAs single heterojunction bipolar transistors grown by solid‐source molecular beam epitaxy using a phosphorus valved cracker (1996) (3)
Influence of Silver as a Catalyst on the Growth of β-Ga2O3 Nanowires on GaAs (2020) (3)
Contactless Electromodulation Characterization of Compound Semiconductor Surfaces and Device Structures (1993) (3)
Efficient electroluminescence from epitaxially grown Ga 1-x Al x As p-n junctions (1967) (3)
Hall Effect Studies of AlGaAs Grown by Liquid-Phase Epitaxy for Tandem Solar Cell Applications (2014) (2)
V-6 a method for the prevention of the formation of dark-line and dark-spot defects in GaAlAs double heterostructure lasers (1976) (2)
Faster Materials versus Nanoscaled Si and SiGe: A Fork in the Roadmap? (2004) (2)
Low-temperature grown GaAs tunnel junctions (1997) (2)
Electromodulation of semiconductors and semiconductor microstructures utilizing a new contactless technique (1992) (2)
Design and modeling of a high efficiency hybrid photovoltaic-photothermal concentrator (PVPTC) system (2013) (2)
Improved contacts to semi‐insulating GaAs photoconductive switches using a graded layer of InGaAs (1990) (2)
Magnetoacoustoelectric Effects in InP (1971) (2)
Optimization of solar cells for air mass zero operation and study of solar cells at high temperatures, phase 4 (1977) (2)
Chemically Stable Semiconductor Surface Layers Using Low-Temperature Grown GaAs (1996) (2)
X-Ray and Raman Studies of MeV Ion Implanted GaInAs/GaAs (1987) (2)
A resistive-gate In/sub 0.53/Ga/sub 0.47/As/InP heterostructure CCD (1991) (2)
The Formation and Cathodoluminescence Activity of Buffer Layer Edge Dislocations in In 0.12 Ga 0.88 As/GaAs Heterostructures (1987) (2)
Heavy Be doping of GaP and InxGa1−xP (1996) (2)
Metal-mirror-based resonant-cavity enhanced light-emitting diodes by the use of a tunnel diode contact (2001) (2)
A 2DEG/low-temperature-grown GaAs dual channel heterostructure transistor (1995) (2)
X-ray and Raman studies of MeV ion-bombarded GaInAs/GaAs (1989) (2)
Summary Abstract: Unpinned (100) GaAs surfaces in air using photochemistry (1986) (2)
Gallium Phosphide Solar Cell Structures with Improved Quantum Efficiencies (2019) (2)
InAs/GaP/InGaP high-temperature power Schottky rectifier (2004) (2)
Physics and Applications of Metallic Arsenic Clusters in GaAs Based Layer Structures (1993) (2)
GaP-based MIS Capacitors Using a SiN Gate Dielectric (2003) (2)
Effect of semiconductor growth method and bulk doping on fermi level stabilization for aluminum and gold contacts on n- and p-GaAs(100) (1993) (2)
Basic research needs and opportunities in thin films and coatings (1982) (2)
Aluminum: a safe, economical, high energy density material for energy storage, transport and splitting water to make hydrogen on demand (2009) (2)
203 mu A threshold current strained V-groove lasers (1992) (2)
Hole dominated transport in InGaAs metal semiconductor metal photodetectors (1995) (2)
Control of As diffusion using ultrathin metal passivating layers at GaAs(100) surfaces (1993) (2)
Characterization Of Planar Antenna Fabricated An GaAs Epilayers Containing As Clusters For Picosecond Short-pulse Applications (1993) (2)
Defect Structures in GaP/Si (1995) (2)
Correlation of defect profiles with carrier profiles of InAs epilayers on GaP (2001) (2)
Impact of surface processing on Al/GaAs(100) interface states (1992) (2)
The electronic properties and control of semiconductor interfaces (1990) (1)
Phonon Shifts and Strains in Strained-Layer (Ga 1−x In x )As (1987) (1)
The Effects of Interfacial Reactions in the Formation of Ohmic Contacts to GaAs (1994) (1)
40 Years of Heterojunctions: No End in Sight (2008) (1)
Electrical Properties of MetaI-Diamond-Like-Nanocomposite ( Me-DLN ) Contacts to 6 H SiC (2007) (1)
Processing and reconstruction effects on Al-GaAs(100) barrier heights (1993) (1)
Solar cell structures (1973) (1)
Cross-Sectional Scanning Tunneling Microscopy of GaAs Doping Superlattices: Pinned vs. Unpinned Surfaces (1993) (1)
Deep levels and band bending at GaP(100) and (110) surfaces (1994) (1)
Base recombination in high performance InGaAs/InP HBTs (1993) (1)
Molecular beam epitaxy approach to the graphitization of GaAs(100) surfaces (2011) (1)
High-density optical storage using arsenic nanoclusters in GaAs and AlGaAs (1992) (1)
Optical signal routing using emission packet positioning of semiconductor heterostructure (2005) (1)
Non-Silicon MOSFET Technology: A Long Time Coming (2010) (1)
Comment on arsenic precipitate coarsening in GaAs epilayers (1993) (1)
Molecular beam epitaxy growth of InAs and In0.8Ga0.2As channel materials on GaAs substrate for metal oxide semiconductor field effect transistor applications (2008) (1)
Photoluminescence excitation spectroscopy of p-GaAs surfaces and AlGaAs/GaAs interfaces supported by numerical modeling (2012) (1)
Microstructural and Electrical Characterization of Misfit Dislocations at the InAs/GaP Heterointerface (1997) (1)
Heterogeneous integration of semiconductor materials: basic issues, current progress, and future prospects (2012) (1)
Transport properties and applications of unstrained In0.75Ga0.25As/Al0.6Ga0.4As heterojunctions (1990) (1)
Direct measurement of proton straggling in GaAlAs for nuclear profiling (1984) (1)
Optimization of solar cells for air mass zero operation and a study of solar cells at high temperatures, phase 2. Final report, 20 January 1975--1 March 1976 (1976) (1)
PfFP Lecture 6: Gravity, Force and Space I (2011) (0)
n-lnAs / GaAs heterostructure superconducting weak Hnks with Nb electrodes (2001) (0)
PfFP Lecture 16: Electricity and Magnetism III (2011) (0)
High Bandwidth Devices : Faster Materials versus Nanoscaled Si and SiGe (2004) (0)
Pseudomorphic GaInAs/GaAs single quantum well structures with high electron mobility (1986) (0)
Novel light emitting device with ultrafast color switching (2002) (0)
Solubility-limit activation of Si doping at MBE GaAs pn junctions observed by cross-sectional scanning tunneling microscopy (1993) (0)
PfFP Lecture 38: The Course in Review (2011) (0)
Electron injection laser. Final report, 1 January--30 June 1968 (1968) (0)
PfFP Lecture 4: Atoms and Heat I (2011) (0)
PfFP Lecture 17: Waves, Earthquakes, and Music I (2011) (0)
A process for the manufacture of semiconductor heterostructures (1977) (0)
InP/lnGaAs DOUBLE HETEROJUNCTION 6 I POLAR TRANS ISTO RS I NCO R PO RAT1 NG CARBON-DOPED BASES AND SUPER LAlTl CE GRADED BASE-CO LLECTO R JUNCTIONS (1993) (0)
Cathodoluminescence of Ingaas-GaAs Single Heterostructures (1986) (0)
Unique Defect-Induced Donor Structure at the Lattice Mismatched InAs/GaP Heterointerface (1998) (0)
PfFP Lecture 5: Atoms and Heat II (2011) (0)
PfFP Lecture 32: Relativity I (2011) (0)
Characterization of terahertz optoelectronic behavior of GaAs epilayers containing arsenic precipitates (1992) (0)
Solid Al Alloys - A Safe, High Energy Density Material for Storage, Transport, and Generation of Hydrogen on Demand - Invited (2009) (0)
PfFP Lecture 15: Electricity and Magnetism II (2011) (0)
Metal-insulator-metal junction structures with adjustable barrier heights and producing method. (1991) (0)
Compound Semiconductor Surfaces and Interfaces: Whence Fermi Level Pinning? (1984) (0)
Proposal of ZnSe/GaAs digital alloys for high band gap solar cells and true green LEDs (2009) (0)
Liquid phase-enabled reaction of Al e Ga and Al e Ga e In e Sn alloys with water (2011) (0)
Self-assembly based approaches for metal/molecule/semiconductor nanoelectronic circuits (1999) (0)
PfFP Lecture 23: Invisible Light I (2011) (0)
Contactless electromodulation for the characterization of semiconductor surfaces/interfaces (1994) (0)
Si-Based Heterojunctions and Strained Si : Growth , Characterization and Applications (2004) (0)
Anomalous Diffusion in Low-temperature-grown AlAs/GaAs Heterostructures (1996) (0)
Moving past 2.0eV: Engineered ZnSe-GaAs alloys for multijunction solar cells (2010) (0)
PfFP Lecture 25: Invisible Light III (2011) (0)
In situ grown single crystal aluminum as a nonalloyed ohmic contact to n-ZnSe by molecular beam epitaxy (2020) (0)
PfFP Lecture 9: Nuclei and Radioactivity I (2011) (0)
Unpinned GaAs Surfaces by Photochemistry (1987) (0)
PfFP Lecture 1: Energy and Power I (2011) (0)
QDs and Nanowires: What About Surface Fermi Level Pinning? (2006) (0)
PfFP Lecture 30: Quantum Physics II (2011) (0)
PfFP Lecture 39: Future of Nuclear Energy in the US - Debate (2011) (0)
PfFP Lecture 29: Quantum Physics I (2011) (0)
New Electronic Properties of Metal / III-V Compound Semiconductor Interfaces (1989) (0)
The Polycrystalline-Si Contact to GaAs. (1986) (0)
PfFP Lecture 37: The Universe III (2011) (0)
GaAs see the light (photodetectors) (1991) (0)
InGaAs superconducting JFETs with Nb electrodes (1989) (0)
PfFP Lecture 36: The Universe II (2011) (0)
Sharp quantum-confined exciton spectra and electroabsorption in low-temperature-growth AlAs/GaAs multiple quantum wells (1995) (0)
Efficient drift dominated photodiodes using defected materials (2005) (0)
Process-Dependent Electronic Structure at Metallized GaAs Contacts (1992) (0)
Improved High-Energy Response of AlGaAs/GaAs Solar Cells Using a Low-Cost Technology (2016) (0)
Semimetal/semiconductor composites for optoelectronic applications (1994) (0)
Photodetector heterojunction and toothed Schottky barrier. (1988) (0)
MICROWAVE OSCILLATIONS IN BULK SEMICONDUCTORS. (1966) (0)
GaAs epilayers containing arsenic clusters: A metal/semiconductor composite (1993) (0)
Sequential Operation of Three Distinct Misfit Dislocation Introduction Mechanisms in an Epitaxial Bilayer Film (1999) (0)
Improved photovoltaic devices, using transparent contacts (1975) (0)
Surface Fermi Level Engineering - Or There's More To Schottky Barriers Than Just The Arguments Among Physicists (1991) (0)
Photomodulation study of partially s t r a i n ed I n xG a, -xAs I aye r s (1993) (0)
Electro-optical semiconductor device. (1987) (0)
Growth and Characterization of InxGa1−xP(x≤0.38) on GaP(1OO) with a Linearly Graded Buffer Layer by Gas-Source Molecular Beam Epitaxy (1992) (0)
Non-alloyed ohmic contact on GaAs at nanometer scale (1999) (0)
Cathodoluminescence and Photoluminescence Spectroscopy Study of Low Temperature Molecular Beam Epitaxy GaAs (1991) (0)
Splitting any kind of water with global-scale, earth-abundant, light, recyclable metals to make hydrogen, heat, and potable water on demand (2012) (0)
Readers Illuminate Issues of Solid-State Lighting (2002) (0)
High Quality Epitaxially-grown InAs on GaP Substrates (2005) (0)
PfFP Lecture 26: Climate Change I (2011) (0)
ELECTRON INJECTION LASER. (1968) (0)
Minority carrier confinement thin film solar cell (1975) (0)
Anodization improves GaAs solar cell performance (1977) (0)
PfFP Lecture 14: Electricity and Magnetism I (2011) (0)
Electronic properties of semiconductor interfaces (1987) (0)
Solid-State Optical Routing Device Utilizing Minority Carrier Drift (2003) (0)
Superparamagnetic behavior of Fe 3GaAs precipitates in GaAs (1997) (0)
Reliable contacts to two-dimensional conduction layers (2000) (0)
AlGaAs solar cells grown by liquid phase epitaxy for dual junction solar cells based on c-Si bottom sub-cell (2014) (0)
Oxide Passivation of Photochemically Unpinned GaAs service (2005) (0)
Transport properties of InAs layers grown on GaP substrate by MBE (1999) (0)
Epitaxial Graphene on GaAs Substrates (2010) (0)
PfFP Lecture 19: Waves, Earthquakes, and Music III (2011) (0)
Low-resistance contacts for GaAlAs/GaAs cells (1977) (0)
Optical signal routing device designed with compound semiconductor heterostructure (2004) (0)
Photo-Enhanced Etching of n - (2004) (0)
PfFP Lecture 35: The Universe I (2011) (0)
Development of electroluminescent diode nd: yag lasers suitable for space use. GaAlAs diode development (1972) (0)
InGaP = GaAs heterojunction power Schottky rectifiers (2000) (0)
Ohmic contact to GaAs semiconductor (1980) (0)
Resonant tunneling IR detectors (1990) (0)
Pulse laser deposition fabricated InP/Al-ZnO heterojunction solar cells with efficiency enhanced by an i-ZnO interlayer (2015) (0)
The optimization of Ga (1-x)Al (x)As-GaAs solar cells for air mass zero operation and a study of Ga (1-x)Al (x)As-GaAs solar cells at high temperatures, phase 1 (1976) (0)
TP-A3 capless annealing of GaAs using a controlled excess as vapor pressure source (1980) (0)
PfFP Lecture 24: Invisible Light II (2011) (0)
A nanoscale ohmic contact for nanoelectronic devices (1999) (0)
Bipolar transistor with materialverschiedenem semiconductor junction and process for its manufacture (1972) (0)
Epitaxial growth of Ga1-xAlxAs on GaP (1976) (0)
VB-8 heterostructure semiconductor-superconductor weak links (1986) (0)
IVA-7 surface layer impurity accumulation due to evaporation of GaAs during annealing (1981) (0)
Giving Talks and Posters That People Would Actually Like to See (2006) (0)
PfFP Lecture 31: Quantum Physics III (2011) (0)
Erratum: ‘‘Incoherent interface of InAs grown directly on GaP (001)’’ [Appl. Phys. Lett. 69, 981 (1996)] (1996) (0)
1965–1975: A miracle decade for DRC (2017) (0)
Summary Abstract: Epitaxy: Its role in compound semiconductor device technology (1982) (0)
PfFP Lecture 3: Energy and Power III (2011) (0)
Smcon diffusion at po~ycrystamne-SilGaAs interfaces (2001) (0)
Growth and Characterization of Single Crystalline InN Grown on GaN by RF Sputtering for Robust Schottky Contacts (2016) (0)
Ultrafast lifetime engineering in metal/ semiconductor composites (1994) (0)
PfFP Lecture 2: Energy and Power II (2011) (0)
A process for the production of light emitting diodes (1975) (0)
PfFP Lecture 13: Chain Reactions, Nuclear Reactors and Atomic Bombs III (2011) (0)
Effect of Iso-Electronic GaAs Dopants on the Dislocation Density of (1988) (0)
oral and Spectral Characteristics o B ack-Illu nated InGaAs emiconductor-Metal Photodetectors (1996) (0)
Materials Research Society Symposium Proceedings. Volume 448. Control of Semiconductor Surfaces and Interfaces. December 2-5, 1996, Boston, Massachusetts. (1996) (0)
WA-B2 improved high-energy response of Ga1-xAlxAs-GaAs solar cells using fluorescent capping layers (1978) (0)
Surface finish of a compound semiconductor. (1988) (0)
PfFP Lecture 28: Climate Change III (2011) (0)
Two-dimensionalarsenic-precipitatestructuresin GaAs (0)
Radiant energy converters (1975) (0)
Ballistic transport and Andreev resonances in Nb/In superconducting contacts to InAs and LTG-GaAs (1999) (0)
PfFP Lecture 27: Climate Change II - Debate (2011) (0)
Light-emitting diode (2019) (0)
PfFP Lecture 8: Gravity, Force and Space III (2011) (0)
Physics for Future Presidents (2011) (0)
Magnetic and Magnetoresistance measurements on Fe_3GaAs Precipitates in GaAs (1996) (0)
PfFP Lecture 18: Waves, Earthquakes, and Music II (2011) (0)
On the strain relaxation and misfit dislocation introduction mechanisms in highly lattice mismatched InAs/GaP epitaxy (1999) (0)
Transistor à conduction ballistique (1983) (0)
effect transistors with Nb electrodes (2001) (0)
Electrical and structural properties of Be-and Si-doped low-temperature-grown (1999) (0)
Of a light emitting diode and an optically coupled with the photodetector existing semiconductor device (1974) (0)
A high performance photodetector using a novel drift dominated structure in defected materials (2004) (0)
Cluster Engineering for Photoconductive Switches (1995) (0)
Diffusion length improvements in GaAs associated with Zn diffusion during Ga/1-x/Al/x/As growth (1975) (0)
PfFP Lecture 7: Gravity, Force and Space II (2011) (0)
PfFP Lecture 22: Light III (2011) (0)
Temperature dependence of the 11H photoreflectance lineshape in an (001) In0.21Ga0.79As/GaAs single quantum well (1992) (0)
InAs/InGaP/GaAs heterojunction power Schottky rectifiers (2006) (0)
Influence of Deep States on Gaas-Metal and Cdte-Metal Interface Formation (1988) (0)
Simpler process produces more-efficient solar cell (1977) (0)

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