Jerzy Langer
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Polish physicist
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Physics
Jerzy Langer's Degrees
- PhD Physics University of Warsaw
Why Is Jerzy Langer Influential?
(Suggest an Edit or Addition)According to Wikipedia, Jerzy Marian Langer is a Polish physicist specializing in condensed matter physics. He is a professor at the Institute of Physics of the Polish Academy of Sciences. Langer is currently an Ambassador for the European Innovation Council for the years 2021-2027.
Jerzy Langer's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Shallow versus deep In donors in CdF2 crystals (1977) (77)
- Surface Recombination in Semiconductors (1995) (66)
- Shallow Donor States in Semiconducting CdF2 (1974) (57)
- Recombination processes in erbium-doped MBE silicon (1993) (54)
- CdF2:In: A novel material for optically written storage of information (1995) (52)
- Optical properties of transition metal impurities in CdSe. I. Crystal‐field spectra (1971) (49)
- Energy structure and recombination for ZnS bulk crystals doped with Tb, Er and Eu (1985) (37)
- Deep-shallow transformation of bistable centers in semiconducting CdF2 crystals (1996) (36)
- Energy Transfer Between Shallow Centers and RE Ion Core: Er3+ Ion in Silicon, (2000) (31)
- Temperature dependence of the Schottky barrier in Al/AlGaAs metal‐semiconductor junctions (1993) (30)
- Donor gettering in GaAs by rare‐earth elements (1988) (28)
- Direct spectral probing of energy storage in Si:Er by a free-electron laser (1999) (28)
- Optical properties of transition metal impurities in CdSe II. Photoionization spectra (1971) (27)
- Comments on the theory of photoionization of transition metal impurities in semiconductors (1971) (25)
- Gd3+ and Tb3+ luminescence quenching by the Auger effect in CdF2 crystals (1984) (25)
- Lasing in Rare-Earth-Doped Semiconductors: Hopes and Facts (1999) (22)
- Nature of the charge transfer states of the trigonal and tetragonal Eu3+ centers in CdF2 crystals (1979) (21)
- Lattice relaxation, radiative and non-radiative deexcitation at localized defects (1983) (21)
- Semiconducting CdF2 : Mn—A new material for efficient blue‐green electroluminescence (1979) (20)
- Determination of the CdF2 valence band structure by photoemission measurement (1979) (19)
- On the determination of thermal ionization energy of deep centers from ESR data (1983) (18)
- UNIVERSALITY OF THE BOND-BREAKING MECHANISM IN DEFECT BISTABILITY : OBSERVATION OF OPEN VOLUME IN THE DEEP STATES OF IN AND GA IN CDF2 (1999) (17)
- Multicoloured electroluminescence in CdF2 (1979) (17)
- Determination of the barrier height in metal-CdF2 Schottky diodes (1978) (16)
- Excitonic mechanism of luminescence excitation of rare-earths and transition metals in solids (1991) (16)
- Gallium: a second bistable impurity center in CdF2 (1988) (16)
- Thermoluminescence and photochromism of CdF2: Eu (1975) (15)
- Direct observation of localized impurity excited states degenerate with conduction band (CdF2: Eu) (1981) (15)
- Large defect-lattice relaxation phenomena in solids (1980) (15)
- Localized center luminescence quenching by the auger effect (1988) (14)
- Room-temperature holographic grating recording in CdF2:Ga (1997) (13)
- Evidence for two channel excitation of luminescence in CdF2:Mn (1974) (13)
- Holographic Recording with the Use of Bistable Centers in CdF_{2} (1995) (12)
- Alloy broadening of the near-gap luminescence and the natural band offset in semiconductor alloys (1992) (12)
- A method of excitation profiling in high‐field electroluminescence (1981) (11)
- Ytterbium as a probe of the local lattice environment in GaxIn(1−x)P crystals (1989) (11)
- Where the metal-semiconductor junction emits light (1981) (10)
- Role of Shallow Bound States in Emission Processes of Rare‐Earth Doped Semiconductors (1998) (10)
- TUNNELING-ASSISTED AUTOIONIZATION OF THE LOCALIZED IMPURITIES IN NANOSTRUCTURES (1999) (9)
- Ga1−xAlxAs purification during its liquid phase epitaxial growth in the presence of Yb (1989) (9)
- Near infrared properties of CdF2:ScF3 (1973) (8)
- Spatial profiling of a luminescence impact excitation in an MS junction (1981) (8)
- Optical detection of electron transfer through interfaces in CaF2:Eu–CdF2 SLs (2000) (8)
- On a direct connection of the transition metal impurity levels to the band edge discontinuities in semiconductor heterojunctions (1985) (8)
- Electrical and Optical Properties of Erbium in MBE Silicon and Si/Ge Alloys (1991) (7)
- Spectroscopy of GaAs and InP Grown in the Presence of Rare Earth Elements (1986) (7)
- Minority-carrier confinement by doping barriers (1991) (6)
- Band offsets in heterostructures (1986) (5)
- Use of Bistable Centers in CdF2 in Holographic Recording (1995) (5)
- Emission Patterns of Tb Doped ZnS Bulk Crystals (1984) (5)
- Influence of electric field on electron emission from DX(Te) centres in Al0.55Ga0.45As (1991) (5)
- Implantation of rare-earth atoms into Si and III-V compounds (1993) (4)
- Ionization Energies of Rare Earth Impurities in III-V and II-VI Semiconductor Compounds (1993) (4)
- Defects and Schottky Barrier Formation: A Positive Proof for Epitaxial Al on AlGaAs Schottky Diodes (1992) (4)
- Auger Effect in Semiconductors: Why Does It Matter for Electroluminescence? (1989) (4)
- Environmental Effects in DX (Te) Centers in GaAlAs (1986) (4)
- Pressure Dependence of the Schottky Barrier Heights in Al/AlGaAs Junctions (1993) (4)
- Photoinduced metastable lattice dilation of CdF2:In crystals (1997) (3)
- Resonance effects in energy transfer in CdF 2 :Er, Yb crystals (1982) (3)
- Nonradiative energy‐transfer processes in Cd1−xMnxF2 crystals (1992) (3)
- Entropy of delocalization for centers with large lattice relaxation―Ga, In and Eu donors in CdF2 (1988) (3)
- Shallow donors in CdF2crystals and the semiconductor-insulator transition in mixed Cdx1MexF2fluorites (1983) (3)
- Use of Bistable Centers in CdF_{2} for Holographic Recording (1997) (3)
- Auger effect at localized impurities in semiconductors (1983) (3)
- Equivalent Quantum States in dn and d5+n Electronic Configurations (1973) (3)
- Negative-U Aspects of DX-Center in Alx-Ga1-xAs (1991) (2)
- Erbium Doped Gallium Arsenide a Self-Organising Low Dimensional System (1993) (2)
- Photoinduced Magnetism in CdF2 with Bistable Donors: The Clue for the Negative U? (1997) (2)
- Evidence on a bond-breaking relaxation in the bistable centers In and Ga in CdF2 (1999) (1)
- Enlarging Europe through science and education (2000) (1)
- Nonradiative processes involving rare-earth impurities in nanostructures (2001) (1)
- Semiconductors: Rare Earth Impurities (2001) (1)
- Can External Perturbation Measurements Provide a Critical Test of Models of the Schottky Barrier Formation? (1993) (1)
- Persistent Photoluminescence of DX-Centers in Ga1-xAlxAs:Si (1991) (1)
- BISTABLE NATURE OF DX CENTERS IN AlGaAs (1990) (1)
- LIGHT-INDUCED GRATINGS IN CdMnTeSe:In CRYSTALS (1997) (1)
- Test for the Impurity Wavefunction Modelling from the Alloy Broadening of the Impurity-Related Luminescence (1993) (1)
- Screening of the Coulomb Interaction and Transition Metal Energy Levels Pinning to the Semiconductor Neutrality Level (1991) (1)
- Schottky diodes as a possible supplementary method for ionic transport investigations in semiconducting ionic solids — application to n-CdF2 (1983) (0)
- Photostriction of CdF_{2}:In Crystals (1997) (0)
- Deep Level Point Imperfections in Semiconductors (1987) (0)
- POINT DEFECTS AND RECOMBINATION IN SEMICONDUCTORS (1989) (0)
- Lattice Relaxation of In Donors in CdF2 (1997) (0)
- IMPURITY WAVE FUNCTION AND ALLOY BROADENING OF IMPURITY-RELATED LUMINESCENCE (1993) (0)
- Relaxation of the lattice due to photoionization of different deep impurities (1993) (0)
- Tracking recombination processes in Si : Er with a free-electron laser (2000) (0)
- Wroclaw—A Phoenix City with the Innovation Gene (2019) (0)
- Influence of Yb on quality of GaAs layers (1988) (0)
- Spectroscopic Probing of Defect-Related Energy Storage in Silicon Doped with Erbium, (1999) (0)
- Image holography in CdF2:Ga crystals (1998) (0)
- Report of the Gordon Research Conference on Point Defects, Line Defects, and Interfaces in Semiconductors Held in Plymouth, New Hampshire (1992) (0)
- Environmental effects in the intracentre emission of Yb3+ ions in GaxIn(1−x)P crystals (1990) (0)
- Alloy Broadening of the Acceptor-Related Near-Gap Luminescence in Semiconductor Alloys (1993) (0)
- Nonequivalence of alloying and hydrostatic pressure influence on properties of the Dx centers in GaAlAs (1988) (0)
- DX-Like Centres in Semiconductors: Metastability, Bistability and Negative U (1991) (0)
- Heuristic Approach to Band-Edge Discontinuities in Heterostructures (1986) (0)
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