Jingyu Lin
#41,938
Most Influential Person Now
Physicist, Nano-Photonics researcher
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Physics
Jingyu Lin's Degrees
- PhD Physics Stanford University
- Masters Physics Stanford University
Why Is Jingyu Lin Influential?
(Suggest an Edit or Addition)According to Wikipedia, Jingyu Lin is a Chinese-American physicist and engineer working in the field of wide bandgap semiconductors and photonic devices. She is a co-inventor of MicroLED. In 2000, the husband-wife research team led by Hongxing Jiang and Jingyu Lin proposed and realized the operation of the first MicroLED and passive driving MicroLEDmicrodisplay. In 2009, their team and colleagues at III-N Technology, Inc. and Texas Tech University realized and patented the first active driving MicroLED microdisplay in VGA format by heterogeneously integrating MicroLED array with Si CMOS active-matrix driver. MicroLED display market is expected to hit US$24,307.4 Million by 2027.
Jingyu Lin's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Deep ultraviolet photoluminescence of water-soluble self-passivated graphene quantum dots. (2012) (1379)
- Room-temperature ferromagnetism in carbon-doped ZnO. (2007) (638)
- Deep ultraviolet to near-infrared emission and photoresponse in layered N-doped graphene quantum dots. (2014) (400)
- InGaN/GaN multiple quantum well solar cells with long operating wavelengths (2009) (348)
- III-nitride blue and ultraviolet photonic crystal light emitting diodes (2004) (327)
- Unique optical properties of AlGaN alloys and related ultraviolet emitters (2004) (299)
- Band structure and fundamental optical transitions in wurtzite AlN (2003) (291)
- Mg acceptor level in AlN probed by deep ultraviolet photoluminescence (2003) (246)
- III-Nitride full-scale high-resolution microdisplays (2011) (236)
- Structural phase behavior in II–VI semiconductor nanoparticles (1995) (214)
- InGaN/GaN multiple quantum well concentrator solar cells (2010) (188)
- Fundamental optical transitions in GaN (1996) (169)
- Temperature and compositional dependence of the energy band gap of AlGaN alloys (2005) (165)
- Epitaxially grown semiconducting hexagonal boron nitride as a deep ultraviolet photonic material (2011) (163)
- Nitride deep-ultraviolet light-emitting diodes with microlens array (2005) (161)
- 200nm deep ultraviolet photodetectors based on AlN (2006) (159)
- GaN microdisk light emitting diodes (2000) (158)
- Optical and electrical properties of Mg-doped p-type AlxGa1−xN (2002) (150)
- Deep impurity transitions involving cation vacancies and complexes in AlGaN alloys (2005) (149)
- Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction (2000) (148)
- Nitride micro-LEDs and beyond--a decade progress review. (2013) (142)
- Enhanced light extraction in III-nitride ultraviolet photonic crystal light-emitting diodes (2004) (139)
- Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys (2009) (138)
- Ferromagnetism in ZnO Nanowires Derived from Electro‐deposition on AAO Template and Subsequent Oxidation (2008) (138)
- Metastability and persistent photoconductivity in Mg‐doped p‐type GaN (1996) (136)
- Structure and Photoluminescence Study of TiO2 Nanoneedle Texture along Vertically Aligned Carbon Nanofiber Arrays (2008) (134)
- Nature of Mg impurities in GaN (1996) (131)
- III-nitride photonic crystals (2003) (131)
- Hydrogen generation by solar water splitting using p-InGaN photoelectrochemical cells (2010) (128)
- Correlation between optoelectronic and structural properties and epilayer thickness of AlN (2007) (120)
- Time-resolved photoluminescence studies of AlxGa1−xN alloys (2000) (119)
- Photoluminescence studies of impurity transitions in AlGaN alloys (2006) (117)
- Carbon-doped ZnO: A New Class of Room Temperature Dilute Magnetic Semiconductor (2006) (117)
- Mechanisms of band‐edge emission in Mg‐doped p‐type GaN (1996) (116)
- Dielectric strength, optical absorption, and deep ultraviolet detectors of hexagonal boron nitride epilayers (2012) (116)
- InGaN/GaN quantum well interconnected microdisk light emitting diodes (2000) (115)
- Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping (2003) (113)
- Order parameter of MgB(2): a fully gapped superconductor. (2001) (112)
- Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys (2005) (109)
- Correlation between optical and electrical properties of Mg-doped AlN epilayers (2006) (107)
- Thermoelectric properties of InxGa1−xN alloys (2008) (107)
- Persistent photoconductivity in a two-dimensional electron gas system formed by an AlGaN/GaN heterostructure (1997) (106)
- Polarization of III-nitride blue and ultraviolet light-emitting diodes (2005) (106)
- Hexagonal boron nitride for deep ultraviolet photonic devices (2014) (105)
- Hexagonal boron nitride epitaxial layers as neutron detector materials (2011) (105)
- Transport properties of highly conductive n-type Al-rich AlxGa1−xN(x⩾0.7) (2004) (102)
- III-nitride micro-emitter arrays: development and applications (2008) (99)
- Time-resolved photoluminescence studies of InGaN epilayers (1996) (92)
- Time-resolved photoluminescence studies of InxGa1−xAs1−yNy (2000) (92)
- Effects of tensile and compressive strain on the luminescence properties of AlInGaN/InGaN quantum well structures (2000) (91)
- Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells (1998) (91)
- Nature of deep center emissions in GaN (2010) (91)
- Thermoelectric properties of quaternary Heusler alloysFe2VAl1−xSix (2007) (90)
- Optical and electrical properties of Al-rich AlGaN alloys (2001) (90)
- Direct hydrogen gas generation by using InGaN epilayers as working electrodes (2008) (89)
- Recent developments of wide-bandgap semiconductor based UV sensors (2009) (89)
- Band-edge photoluminescence of AlN epilayers (2002) (88)
- A study of the Au/Ni ohmic contact on p-GaN (2000) (86)
- Deep ultraviolet picosecond time-resolved photoluminescence studies of AlN epilayers (2003) (85)
- AlxGa1−xN/GaN band offsets determined by deep-level emission (2001) (83)
- Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes (1997) (82)
- Epitaxial growth and demonstration of hexagonal BN/AlGaN p-n junctions for deep ultraviolet photonics (2012) (81)
- AlGaN-based ultraviolet light-emitting diodes grown on AlN epilayers (2004) (80)
- GaN-based waveguide devices for long-wavelength optical communications (2003) (77)
- Band-edge exciton states in AlN single crystals and epitaxial layers (2004) (76)
- Electrical and optical properties of p-type InGaN (2009) (74)
- Achieving highly conductive AlGaN alloys with high Al contents (2002) (71)
- A Simplified Method of Making Flexible Blue LEDs on a Plastic Substrate (2015) (71)
- The origin of deep-level impurity transitions in hexagonal boron nitride (2015) (69)
- Development of microLED (2020) (67)
- Two-dimensional excitons in three-dimensional hexagonal boron nitride (2013) (67)
- Optical modes within III-nitride multiple quantum well microdisk cavities (1998) (67)
- Exciton localization in AlGaN alloys (2006) (66)
- Growth of III-nitride photonic structures on large area silicon substrates (2006) (65)
- Electroluminescent properties of erbium-doped III-N light-emitting diodes (2004) (65)
- Excitonic recombination in GaN grown by molecular beam epitaxy (1995) (64)
- Optical properties of AlN and GaN in elevated temperatures (2004) (64)
- Realization of highly efficient hexagonal boron nitride neutron detectors (2016) (64)
- Memory characteristics of Co nanocrystal memory device with HfO (2007) (61)
- Fabrication of n-type nickel doped B5C1+δ homojunction and heterojunction diodes (1997) (61)
- Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition (2006) (60)
- III-nitride ultraviolet light-emitting diodes with delta doping (2003) (59)
- Single phase InxGa1−xN(0.25≤x≤0.63) alloys synthesized by metal organic chemical vapor deposition (2008) (59)
- OPTICAL RESONANCE MODES IN GAN PYRAMID MICROCAVITIES (1999) (59)
- Optical transitions in GaN/AlxGa1−xN multiple quantum wells grown by molecular beam epitaxy (1996) (57)
- Room temperature intrinsic optical transition in GaN epilayers: The band-to-band versus excitonic transitions (1997) (57)
- Exciton-phonon interaction in InGaN/GaN and GaN/AlGaN multiple quantum wells (1997) (55)
- Properties of Co-, Cr-, or Mn-implanted AlN (2003) (54)
- The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates (2009) (54)
- Effects of well thickness and Si doping on the optical properties of GaN/AlGaN multiple quantum wells (1997) (54)
- Characterization of AlN metal-semiconductor-metal diodes in the spectral range of 44–360nm: Photoemission assessments (2008) (53)
- Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy (2015) (53)
- Photoluminescence studies of band‐edge transitions in GaN epitaxial layers grown by plasma‐assisted molecular beam epitaxy (1996) (53)
- Suppression of thermal conductivity in InxGa1−xN alloys by nanometer-scale disorder (2013) (51)
- Unique nanostructures in NiCo alloy nanowires (2009) (50)
- Review—hexagonal boron nitride epilayers: Growth, optical properties and device applications (2017) (50)
- Linewidths of excitonic luminescence transitions in AlGaN alloys (2001) (49)
- Optical resonance modes in InGaN/GaN multiple-quantum-well microring cavities (1999) (49)
- Neutral‐donor‐bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition (1995) (49)
- Optical properties of GaN pyramids (1999) (49)
- The origins of leaky characteristics of Schottky diodes on p-GaN (2003) (48)
- Comparison of optical transitions in InGaN quantum well structures and microdisks (2001) (47)
- Hexagonal boron nitride thin film thermal neutron detectors with high energy resolution of the reaction products (2015) (47)
- Size dependence of III-nitride microdisk light-emitting diode characteristics (2001) (47)
- Fabrication and characterization of solid-state thermal neutron detectors based on hexagonal boron nitride epilayers (2014) (47)
- Erbium-Doped GaN Optical Amplifiers Operating at 1.54 Micrometers (2009) (46)
- Band-edge transitions in hexagonal boron nitride epilayers (2012) (46)
- Free excitonic transitions in GaN, grown by metal‐organic chemical‐vapor deposition (1996) (46)
- Ultraviolet photoluminescence from Gd-implanted AlN epilayers (2006) (45)
- Antisite disorder driven spontaneous exchange bias effect in La2−xSrxCoMnO6 (0 ⩽ x ⩽ 1) (2015) (45)
- Nitride microlens arrays for blue and ultraviolet wavelength applications (2003) (45)
- Ultrafast photoinduced mechanical strain in epitaxial BiFeO3 thin films (2012) (45)
- Ultraviolet photoluminescence from ferromagnetic Fe-doped AlN nanorods (2007) (44)
- Growth and photoluminescence studies of Al-rich AlN∕AlxGa1−xN quantum wells (2006) (44)
- The origins of near band-edge transitions in hexagonal boron nitride epilayers (2016) (43)
- High mobility InN epilayers grown on AlN epilayer templates (2008) (43)
- 1.54 μm emitters based on erbium doped InGaN p-i-n junctions (2010) (43)
- Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells (2012) (43)
- Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors (2007) (42)
- AlN avalanche photodetectors (2007) (42)
- Annealing of dry etch damage in metallized and bare (-201) Ga2O3 (2017) (42)
- Growth and optical properties of InxAlyGa1−x−yN quaternary alloys (2001) (41)
- Excitation dynamics of the 1.54μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition (2007) (41)
- Photoluminescence studies of Si-doped AlN epilayers (2003) (41)
- High quality AlN for deep UV photodetectors (2009) (41)
- Nature of optical transitions involving cation vacancies and complexes in AlN and AlGaN (2012) (41)
- Silicon doping dependence of highly conductive n-type Al0.7Ga0.3N (2004) (41)
- Origin of the significantly enhanced optical transitions in layered boron nitride (2012) (41)
- Persistent photoconductivity in Ga1−xInxNyAs1−y (1999) (40)
- Origin of background electron concentration in InxGa1-xN alloys (2011) (40)
- Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates (2014) (40)
- Effects of plasma treatment on the Ohmic characteristics of Ti∕Al∕Ti∕Au contacts to n-AlGaN (2006) (40)
- Excitonic luminescence linewidths in AlGaN alloys with high aluminum concentrations (2002) (40)
- Band structure of superlattice with graded interfaces (1987) (40)
- Determination of energy-band offsets between GaN and AlN using excitonic luminescence transition in AlGaN alloys (2006) (40)
- Correlation between biaxial stress and free exciton transition in AlN epilayers (2007) (39)
- The incorporation of Nickel and Phosphorus dopants into Boron-Carbon alloy thin films (1998) (39)
- Effects of the Wave Function Localization in AlInGaN Quaternary Alloys (2007) (39)
- Two-dimensional electron gas in AlGaN/GaN heterostructures (1997) (38)
- Colossal electroresistance and colossal magnetoresistance in spinel multiferroic CdCr2S4 (2010) (38)
- Comparative analysis of specific heat of YNi$_{2}$B$_{2}$C using nodal and two-gap models (2005) (38)
- Photoresponsivity of ultraviolet detectors based on InxAlyGa1−x−yN quaternary alloys (2000) (38)
- Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector (1998) (36)
- Using double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devices (2007) (36)
- Cluster size and composition variations in yellow and red light-emitting InGaN thin films upon thermal annealing (2004) (36)
- Erbium-Doped AlInGaN Alloys as High-Temperature Thermoelectric Materials (2011) (36)
- NMR study of the ternary carbidesM2AlC(M=Ti,V,Cr) (2006) (36)
- Well-width dependence of the quantum efficiencies of GaN/AlxGa1−xN multiple quantum wells (2000) (36)
- Large-Scale Growth of High-Quality Hexagonal Boron Nitride Crystals at Atmospheric Pressure from an Fe–Cr Flux (2017) (35)
- AlGaN∕GaN∕AlN quantum-well field-effect transistors with highly resistive AlN epilayers (2006) (35)
- Evolution of phase separation in In-rich InGaN alloys (2010) (35)
- Dynamics of a band‐edge transition in GaN grown by molecular beam epitaxy (1995) (35)
- Hexagonal boron nitride and 6H-SiC heterostructures (2013) (35)
- Large-scale growth of ultrathin MgO nanowires and evaluate their field emission properties (2009) (35)
- Optical properties of the nitrogen vacancy in AlN epilayers (2004) (35)
- Magnetic field dependence of low-temperature specific heat of the spinel oxide superconductor LiTi2O4 (2004) (35)
- Hexagonal boron nitride neutron detectors with high detection efficiencies (2018) (34)
- Electrical transport properties of Si-doped hexagonal boron nitride epilayers (2013) (34)
- Photoluminescence properties of AlN homoepilayers with different orientations (2008) (34)
- Unintentionally doped n-type Al0.67Ga0.33N epilayers (2005) (34)
- Si-Doped High Al-Content AlGaN Epilayers with Improved Quality and Conductivity Using Indium as a Surfactant (2008) (34)
- Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes (2002) (34)
- Layer-structured hexagonal (BN)C semiconductor alloys with tunable optical and electrical properties (2014) (34)
- Persistent photoconductivity in II‐VI and III‐V semiconductor alloys and a novel infrared detector (1991) (33)
- Optical properties of GaN/AlGaN multiple quantum well microdisks (1997) (33)
- Temperature-Dependent Photoluminescence and Electron Field Emission Properties of AIN Nanotip Arrays (2009) (32)
- Effects of tensile, compressive, and zero strain on localized states in AlInGaN/InGaN quantum-well structures (2002) (32)
- Growth and photoluminescence studies of Zn-doped AlN epilayers (2006) (32)
- Growth and deep ultraviolet picosecond time-resolved photoluminescence studies of AlN/GaN multiple quantum wells (2001) (32)
- Thermoelectric Properties of In0.3Ga0.7N Alloys (2009) (31)
- Mg acceptor level in InN epilayers probed by photoluminescence (2007) (31)
- Full-scale self-emissive blue and green microdisplays based on GaN micro-LED arrays (2012) (31)
- Probing carbon impurities in hexagonal boron nitride epilayers (2017) (31)
- Realizing InGaN monolithic solar-photoelectrochemical cells for artificial photosynthesis (2014) (30)
- Origin and roles of oxygen impurities in hexagonal boron nitride epilayers (2018) (30)
- Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition (2007) (30)
- Metamagnetic behaviour and effect of field cooling on sharp magnetization jumps in multiferroic Y2CoMnO6 (2014) (30)
- Time-resolved photoluminescence studies of an ionized donor-bound exciton in GaN (1999) (29)
- Bandgap and exciton binding energies of hexagonal boron nitride probed by photocurrent excitation spectroscopy (2016) (29)
- Characterization of bulk hexagonal boron nitride single crystals grown by the metal flux technique (2014) (28)
- III-nitride-based planar lightwave circuits for long wavelength optical communications (2005) (28)
- Effective mass of two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterojunction (2001) (27)
- Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers (2010) (27)
- MOCVD growth of GaBN on 6H-SiC (0001) substrates (2000) (27)
- Optical transitions in Pr-implanted GaN (1999) (27)
- Toward achieving flexible and high sensitivity hexagonal boron nitride neutron detectors (2017) (26)
- Dry etching techniques for active devices based on hexagonal boron nitride epilayers (2013) (25)
- Transition metal ion implantation into AlGaN (2003) (25)
- Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31 (2003) (25)
- Mode spacing ``anomaly'' in InGaN blue lasers (1999) (25)
- Probing the relationship between structural and optical properties of Si-doped AlN (2010) (24)
- Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers (2009) (24)
- Synthesis and properties of Cd1−xMnxS diluted magnetic semiconductor ultrafine particles (1997) (24)
- Acceptor-bound exciton recombination dynamics in p-type GaN (1995) (23)
- Probing exciton-phonon interaction in AlN epilayers by photoluminescence (2009) (23)
- Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors (2016) (23)
- Current-injected 1.54μm light emitting diodes based on erbium-doped GaN (2008) (23)
- Three‐step growth method for high quality AlN epilayers (2012) (23)
- Collective effects of interface roughness and alloy disorder in InxGa1−xN/GaN multiple quantum wells (1998) (23)
- Localized vibrational modes of carbon-hydrogen complexes in GaN (1999) (22)
- Electrical and optical properties of Mg doped Al$_{0.7}$Ga$_{0.3}$N Alloys (2005) (22)
- Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells. (2013) (22)
- III-Nitride Quantum Devices—Microphotonics (2003) (21)
- Anomalous magnetic ordering in b-axis-oriented orthorhombic HoMnO3 thin films (2008) (21)
- Sublimation growth of aluminum nitride crystals (2006) (21)
- Charge carrier transport properties in layer structured hexagonal boron nitride (2014) (21)
- Time-resolved electroluminescence studies of III-nitride ultraviolet photonic-crystal light-emitting diodes (2004) (20)
- Acceptor-bound exciton transition in Mg-doped AlN epilayer (2004) (20)
- Excitation mechanisms of Er optical centers in GaN epilayers (2015) (20)
- High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors (2012) (20)
- Nature of exciton transitions in hexagonal boron nitride (2016) (20)
- Layer number dependent optical properties of multilayer hexagonal BN epilayers (2017) (20)
- Transport properties of CrO2 (110) films grown on TiO2 buffered Si substrates by chemical vapor deposition (2002) (19)
- Thermally stable Schottky contacts on n-type GaN using ZrB 2 (2006) (19)
- Quantum well intermixing in GaInNAs'GaAs structures (2003) (19)
- Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys (2014) (19)
- Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength (2010) (19)
- Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er (2008) (18)
- Beryllium acceptor binding energy in AlN (2008) (18)
- Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides. (2013) (18)
- Crystal field analysis of rare-earth ions energy levels in GaN (2014) (18)
- Fabrication and optical studies of AlGaN/GaN quantum-well waveguides (2001) (18)
- Strong green luminescence in quaternary InAlGaN thin films (2003) (17)
- Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes (2014) (17)
- Growth and optical studies of two-dimensional electron gas of Al-rich AlGaN/GaN heterostructures (2002) (17)
- Pressure effects on the transition temperature of superconducting MgCxNi3 (2003) (17)
- Surface chemical and electronic properties of plasma‐treated n‐type Al0.5Ga0.5N (2007) (17)
- Carbon-rich hexagonal (BN)C alloys (2015) (17)
- AlGaN and InAlGaN alloys : epitaxial growth optical and electrical properties, and applications (2002) (16)
- Photonic properties of erbium doped InGaN alloys grown on Si (001) substrates (2011) (16)
- High sensitivity hexagonal boron nitride lateral neutron detectors (2019) (16)
- Propagation properties of light in AlGaN/GaN quantum-well waveguides (2001) (16)
- Semiconducting hexagonal boron nitride for deep ultraviolet photonics (2012) (16)
- Effects of double layer AlN buffer layers on properties of Si-doped AlxGa1−xN for improved performance of deep ultraviolet light emitting diodes (2013) (16)
- Ab initio study of F- and Cl-functionalized single wall carbon nanotubes (2006) (16)
- High efficiency hexagonal boron nitride neutron detectors with 1 cm2 detection areas (2020) (15)
- Effects of alloy disorder on the transport properties of AlxGa1−xN epilayers probed by persistent photoconductivity (2000) (15)
- Plasma heating in highly excited GaN/AlGaN multiple quantum wells (1998) (15)
- Barrier-width dependence of quantum efficiencies of GaN/AlxGa1−xN multiple quantum wells (2000) (14)
- Metallic percolation in La0.67Ca0.33MnO3 thin films (2003) (14)
- Formation energy of optically active Er3+ centers in Er doped GaN (2012) (14)
- SiO2/TiO2 distributed Bragg reflector near 1.5 μm fabricated by e-beam evaporation (2013) (14)
- The influence of lanthanum doping position in ultra-thin HfO2 films for high-k gate dielectrics (2010) (14)
- Temperature dependence of the energy bandgap of two-dimensional hexagonal boron nitride probed by excitonic photoluminescence (2014) (14)
- Stability and local electronic properties ofAl3M(M=Zr,Hf): An NMR study (2005) (13)
- Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures (2015) (13)
- Surfactant effects of gallium on quality of AlN epilayers grown via metal-organic chemical-vapour deposition on SiC substrates (2012) (13)
- Bonding anisotropy in multiferroic TbMnO3 probed by polarization dependent x-ray absorption spectroscopy (2009) (13)
- AlN MSM and Schottky photodetectors (2008) (13)
- Formation and dissolution of microcrystalline graphite in carbon-implanted GaN (2000) (13)
- Photoluminescence quantum efficiency of Er optical centers in GaN epilayers (2016) (13)
- Magnetostructural coupling and multiferroic properties in the spin-frustrated system Ni1-xZnxCr2O4 (2016) (13)
- Optical properties of a high-quality insulating GaN epilayer (1999) (13)
- Valence band structure of AlN probed by photoluminescence (2008) (12)
- Enhanced magnetization in erbium doped GaN thin films due to strain induced electric fields (2011) (12)
- Persistent photoconductivity in InxAlyGa1−x−yN quaternary alloys (2003) (12)
- An improved planar-gate triode with CNTs field emitters by electrophoretic deposition (2011) (12)
- Near infrared photonic devices based on Er-doped GaN and InGaN (2011) (12)
- Photoluminescence properties of erbium doped InGaN epilayers (2009) (12)
- Room-Temperature Lasing Action in GaN Quantum Wells in the Infrared 1.5 μm Region (2018) (12)
- Bulk AlN crystal growth by direct heating of the source using microwaves (2004) (12)
- Delta-doped AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with high breakdown voltages (2002) (12)
- Toward the realization of erbium-doped GaN bulk crystals as a gain medium for high energy lasers (2016) (12)
- Deep Ultraviolet Photoluminescence Studies of AlN Photonic Crystals (2006) (11)
- Effects of e-beam deposited gate dielectric layers with atmospheric pressure plasma treatment for IGZO thin-film transistors (2016) (11)
- Optical excitation cross section of erbium in GaN. (2013) (11)
- Fabrication and properties of film-under-gate field emission arrays with SnO2 emitters for flat lamp (2010) (11)
- Effects of electron mass anisotropy on Hall factors in 6H‐SiC (1996) (11)
- Optimizing growth conditions for GaN/AlxGa1−xN multiple quantum well structures (2000) (11)
- Effects of surface recombination on the charge collection in h-BN neutron detectors (2019) (11)
- Low‐temperature epitaxial growth and photoluminescence characterization of GaN (1994) (11)
- Lateral charge carrier transport properties of B-10 enriched hexagonal BN thick epilayers (2019) (11)
- Birefringence of GaN/AlGaN optical waveguides (2003) (10)
- Dynamics of Hydrides on Hydrogen-Terminated Silicon (111)−(1×1) Surface (1999) (10)
- Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition (2011) (10)
- Time-Resolved Photoluminescence Studies of In x Ga 1−x As 1−y N y (1999) (10)
- Refractive index of erbium doped GaN thin films (2014) (9)
- Near-field optical study of AlGaN/GaN quantum-well waveguide (2004) (9)
- Evidence for bistable defects in 6H-SiC (1994) (9)
- Dynamics of localized excitons in InGaN/GaN quantum wells (1998) (9)
- Effects of rapid thermal annealing on the structural properties of TiO2 nanotubes (2011) (9)
- Enhancement of 1.5 μm emission under 980 nm resonant excitation in Er and Yb co-doped GaN epilayers (2016) (9)
- Optical properties of GaN/AlN multiple quantum wells (2004) (9)
- Steady‐state temperature profiles in thermally thin substrates induced by arbitrarily shaped laser beams (1989) (9)
- Optical transitions in InGaN/AlGaN single quantum wells (1997) (9)
- Thermoelectric Properties of In_x_Ga_1-x_N Alloys (2008) (9)
- Effects of an Ag overlayer on the magnetic properties of ultrathin Co/Cu(111) films (2001) (8)
- Hyperspectral Nonlinear Optical Light Generation from a Monolithic GaN Microcavity (2017) (8)
- Thermoelectric properties of quaternary Heusler alloys Fe (2007) (8)
- Stable field emission from planar-gate electron source with MWNTs by electrophoretic deposition (2012) (8)
- Synthesis and properties of Cd/sub 1-x/Mn/sub x/S diluted magnetic semiconductor nanoparticles (1994) (8)
- Nonmagnetic impurity perturbation to the quasi-two-dimensional quantum helimagnet LiCu2O2 (2010) (8)
- Free nucleation of aluminum nitride single crystals in HPBN crucible by sublimation (2005) (8)
- Annealing behavior of luminescence from erbium-implanted GaN films (2001) (8)
- Growth and fabrication of GaN/Er:GaN/GaN core-cladding planar waveguides (2019) (8)
- Hexagonal boron nitride: Epitaxial growth and device applications (2020) (8)
- Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy (2006) (8)
- Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys (2009) (8)
- Structural properties of ZnO grown on GaN/sapphire templates : The transition from nanorods to thin films (2007) (8)
- Studies of field-induced nonequilibrium electron transport in an InxGa1−xN (x≅0.6) epilayer grown on GaN (2003) (8)
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- Effects of surface recombination on the charge collection in h-BN neutron detectors (2019) (0)
- Structure and superconductivity of Y (Ba1−xRx)2Cu3O7−δ (R=La, Pr, and Nd) (1996) (0)
- Direct observations of the band alignment of LaAlO3/SrTiO3 using scanning tunneling microscopy (2012) (0)
- The influence of physical and electrical properties in HfO2 thin film with different lanthanum doping position (2011) (0)
- Optical Reflectance of bulk AlN Crystals and AlN epitaxial films (2005) (0)
- Quantum Efficiency Studies of GaN/AlxGa1-xN MQWs With Different Well Thicknesses (2000) (0)
- Photoluminescence studies of bandedge transitions in GaN epitaxial layers grown by plasmaassisted molecular beam epitaxy (2012) (0)
- Band structure and infrared optical transitions inErN (2020) (0)
- Growth and Characterization of High In-Content InGaN Alloys (2002) (0)
- Growth and Optical Properties of Al rich AlN/AlGaN Quantum Wells (2006) (0)
- Structure and Spin-Glass Properties of Cd,,Mn, ,S Diluted Magnetic Semiconductor Quantum Dots (1995) (0)
- Optica l propertie s of GaN pyramids (1999) (0)
- Current-Injected 1.54 Micrometers Light Emitting Diodes Based on Erbium-Doped (2008) (0)
- Optical Properties of Na x CoO₂ Thin Films and Single Crystal (2007) (0)
- Stresses experienced by AlN films grown on sapphire (2005) (0)
- Achieving p-InxGa1-xN alloys with high In contents (2010) (0)
- X-ray Absorption Spectroscopic on the Phase Transition of Cd2Re2O7 (2006) (0)
- Microwave properties of a Y 0 . 7 Ca 0 . 3 Ba 2 Cu 3 O 7 d microstrip ring resonator with various hole concentrations (2004) (0)
- Two different behavior patterns of photoluminescence depending on Mg doping rate in p-type GaN epilayers (2014) (0)
- Epitaxial Growth and Time-Resolved Photoluminescence Studies ofAlN Epilayers (2003) (0)
- Growth and properties of hexagonal boron nitride (h-BN) based alloys and quantum wells (2020) (0)
- A novel NO2 gas sensor based on Hall effect operating at room temperature (2016) (0)
- Optical properties of AlN epilayers probed by polarization resolved photoluminescence (2008) (0)
- III-Nitrides on Si Substrates (2016) (0)
- The Effect of MOCVD Growth Parameters on the Photolumenescence Intensity of InN/GaN Multi-layers (2002) (0)
- Some Properties of Ultra Thin Oxides Grown in Afterglow Oxygen Plasma (1992) (0)
- Anisotropic magnetic and calorimetric properties of the incommensurate modulated Bi2Sr2PrCu2O8+δ single crystal (1997) (0)
- AlxGa 1 À xN Õ GaN band offsets determined by deep-level emission (2014) (0)
- Improvements on Electrical Properties of Ultra-Thin Silicon Oxides Grown by Microwave Afterglow Oxygen Plasma (1994) (0)
- Fabrication and Characterization of InxAlyGa1−x−yN Ultraviolet Detectors (2000) (0)
- Effects of unique band structure of h-BN probed by photocurrent excitation spectroscopy (2022) (0)
- Wide Bandgap III-Nitride Micro- and Nano-Photonics (2008) (0)
- In Situ FTIR Spectroscopic and Kinetic Studies of Cu Surface Reduction by Using Formic Acid Treatment with Pt Catalysts (2015) (0)
- Effects of polarity on material's quality of Al-rich AlGaN alloys (2007) (0)
- Charge collection and trapping mechanisms in hexagonal boron nitride epilayers (2021) (0)
- 1.54 Micrometer Emitters Based on Erbium Doped InGaN P-I-N Junctions (2010) (0)
- Mercury cadmium tellurium photodetectors fabricated by liquid phase epitaxy and double boron implantation for fiber optic communication (1994) (0)
- Carrier Dynamics in III--Nitrides Studied by Time-Resolved Photoluminescence (2004) (0)
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