Joan Redwing
#64,528
Most Influential Person Now
Materials scientist
Joan Redwing's AcademicInfluence.com Rankings
Joan Redwingengineering Degrees
Engineering
#4569
World Rank
#5769
Historical Rank
Materials Science
#391
World Rank
#395
Historical Rank
Biomedical Engineering
#739
World Rank
#751
Historical Rank
Applied Physics
#2540
World Rank
#2581
Historical Rank
Download Badge
Engineering
Joan Redwing's Degrees
- PhD Materials Science and Engineering Stanford University
- Masters Materials Science and Engineering University of California, Berkeley
Why Is Joan Redwing Influential?
(Suggest an Edit or Addition)According to Wikipedia, Joan M. Redwing is an American materials scientist known for research on electronic and optoelectronic materials, including the processing of semiconductor thin films and nanomaterials by metalorganic chemical vapor deposition . Redwing is a distinguished professor of materials science and engineering and electrical engineering at Pennsylvania State University and director of the university's 2D Crystal Consortium research facility. She is a fellow of the American Association for the Advancement of Science, the American Physical Society, and the Materials Research Society.
Joan Redwing's Published Works
Published Works
- Two-dimensional gallium nitride realized via graphene encapsulation. (2016) (511)
- In situ epitaxial MgB2 thin films for superconducting electronics (2002) (383)
- Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition. (2015) (296)
- Bottom-up assembly of large-area nanowire resonator arrays. (2008) (294)
- Piezoelectric charge densities in AlGaN/GaN HFETs (1997) (273)
- High-field superconductivity in alloyed Mg B 2 thin films (2004) (213)
- Silicon nanowire array photelectrochemical cells. (2007) (194)
- Optical properties of Si-doped GaN (1997) (192)
- CRYSTALLOGRAPHIC WET CHEMICAL ETCHING OF GAN (1998) (191)
- The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes (1998) (185)
- Optical Properties of Rectangular Cross-sectional ZnS Nanowires (2004) (183)
- An optically pumped GaN–AlGaN vertical cavity surface emitting laser (1996) (177)
- Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire. (2018) (166)
- A roadmap for electronic grade 2D materials (2019) (157)
- Nanometer-scale modification and welding of silicon and metallic nanowires with a high-intensity electron beam. (2005) (152)
- High voltage (450 V) GaN Schottky rectifiers (1999) (150)
- Growth characteristics of silicon nanowires synthesized by vapor–liquid–solid growth in nanoporous alumina templates (2003) (150)
- Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction (2000) (148)
- AlGaN/GaN HEMTs grown on SiC substrates (1997) (148)
- p-GaN surface treatments for metal contacts (2000) (143)
- Diameter dependent growth rate and interfacial abruptness in vapor-liquid-solid Si/Si1-xGex heterostructure nanowires. (2008) (141)
- Measuring the specific contact resistance of contacts to semiconductor nanowires (2005) (140)
- Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors. (2018) (137)
- Schottky barrier engineering in III-V nitrides via the piezoelectric effect (1998) (137)
- Benchmarking monolayer MoS2 and WS2 field-effect transistors (2021) (127)
- Superconducting MgB2 thin films on silicon carbide substrates by hybrid physical–chemical vapor deposition (2003) (125)
- Use of phosphine as an n-type dopant source for vapor-liquid-solid growth of silicon nanowires. (2005) (125)
- Enhancement of the superconducting transition temperature of MgB2 by a strain-induced bond-stretching mode softening. (2004) (123)
- Structural and electrical properties of trimethylboron-doped silicon nanowires (2004) (123)
- Growth stresses and cracking in GaN films on (111) Si grown by metalorganic chemical vapor deposition. II. Graded AlGaN buffer layers (2005) (119)
- TWO-DIMENSIONAL ELECTRON GAS PROPERTIES OF ALGAN/GAN HETEROSTRUCTURES GROWN ON 6H-SIC AND SAPPHIRE SUBSTRATES (1996) (118)
- Trap characterization by gate-drain conductance and capacitance dispersion studies of an AlGaN/GaN heterostructure field-effect transistor (2000) (117)
- Enhanced conversion efficiencies for pillar array solar cells fabricated from crystalline silicon with short minority carrier diffusion lengths (2010) (114)
- Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition (2000) (109)
- Measurement of drift mobility in AlGaN/GaN heterostructure field-effect transistor (1999) (99)
- MgB2 thin films by hybrid physical–chemical vapor deposition (2007) (97)
- Electrochemical Investigation of the Gallium Nitride‐Aqueous Electrolyte Interface (1995) (95)
- Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition (2003) (95)
- Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates (1998) (91)
- Vapor–Liquid–Solid Growth of Silicon–Germanium Nanowires (2003) (91)
- Properties of MgB2 thin films with carbon doping (2004) (90)
- Fabrication and characterization of axially doped silicon nanowire tunnel field-effect transistors. (2010) (89)
- Lateral Versus Vertical Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Thermodynamic Insight into MoS2. (2016) (88)
- Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage (2001) (86)
- Radial junction silicon wire array solar cells fabricated by gold-catalyzed vapor-liquid-solid growth (2010) (85)
- Defect-Controlled Nucleation and Orientation of WSe2 on hBN: A Route to Single-Crystal Epitaxial Monolayers. (2019) (84)
- The impact of graphene properties on GaN and AlN nucleation (2015) (83)
- Properties of Si donors and persistent photoconductivity in AlGaN (1998) (83)
- THERMALLY STABLE PTSI SCHOTTKY CONTACT ON N-GAN (1997) (82)
- Stranski-Krastanow growth of germanium on silicon nanowires. (2005) (80)
- Effect of diborane on the microstructure of boron-doped silicon nanowires (2005) (80)
- Wafer-Scale Epitaxial Growth of Unidirectional WS2 Monolayers on Sapphire. (2021) (79)
- Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures (1998) (78)
- Diameter‐Controlled Synthesis of Silicon Nanowires Using Nanoporous Alumina Membranes (2005) (78)
- A low-power biomimetic collision detector based on an in-memory molybdenum disulfide photodetector (2020) (77)
- Intrinsic stresses in AlN layers grown by metal organic chemical vapor deposition on (0001) sapphire and (111) Si substrates (2004) (76)
- Critical current density and resistivity of MgB2 films (2003) (75)
- Template-directed vapor–liquid–solid growth of silicon nanowires (2002) (75)
- Evidence of compensating centers as origin of yellow luminescence in GaN (1997) (75)
- Bicrystalline Silicon Nanowires (2001) (74)
- Fabrication and electrical properties of si nanowires synthesized by Al catalyzed vapor-liquid-solid growth. (2009) (74)
- X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN (2003) (73)
- GaN Growth by Metallorganic Vapor Phase Epitaxy A Comparison of Modeling and Experimental Measurements (1997) (64)
- Interfacial reactions between nickel thin films and GaN (1997) (64)
- Tin-Catalyzed Plasma-Assisted Growth of Silicon Nanowires (2011) (59)
- Diameter-dependent composition of vapor-liquid-solid grown Si(1-x)Ge(x) nanowires. (2007) (58)
- Deep traps in high resistivity AlGaN films (1998) (57)
- Controlled synthesis of 2D transition metal dichalcogenides: from vertical to planar MoS2 (2017) (56)
- Lateral variations in threshold voltage of an AlxGa1−xN/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy (2001) (56)
- An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz (1999) (55)
- Ni and Ni silicide Schottky contacts on n-GaN (1998) (55)
- Considerations for Utilizing Sodium Chloride in Epitaxial Molybdenum Disulfide. (2018) (53)
- Carbon doping in metalorganic vapor phase epitaxy (1994) (52)
- Internal photoemission measurement of Schottky barrier height for Ni on AlGaN/GaN heterostructure (1998) (50)
- Large anisotropic normal-state magnetoresistance in clean MgB2 thin films. (2006) (49)
- Stochastic resonance in MoS2 photodetector (2020) (48)
- Correlation of growth stress and structural evolution during metalorganic chemical vapor deposition of GaN on (111) Si (2006) (47)
- Effect of damage by 2 MeV He ions on the normal and superconducting properties of magnesium diboride (2004) (47)
- Enhancement of flux pinning and high-field critical current density in carbon-alloyed Mg B 2 thin films (2006) (46)
- Al composition dependence of breakdown voltage in AlxGa1−xN Schottky rectifiers (2000) (46)
- Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si (2005) (45)
- The nature of catalyst particles and growth mechanisms of GaN nanowires grown by Ni-assisted metal–organic chemical vapor deposition (2009) (45)
- High critical current density and vortex pinning of epitaxialMgB2thin films (2003) (45)
- Microwave noise performance of AlGaN/GaN HEMTs (2000) (44)
- In situ stress measurements during the MOCVD growth of AlN buffer layers on (1 1 1) Si substrates (2004) (42)
- High Upper Critical Field and Irreversibility Field in MgB2 Coated-Conductor Fibers (2005) (42)
- Steady-state tensile stresses during the growth of polycrystalline films (2007) (40)
- Al 0.15 Ga 0.85 N/GaN heterostructures: Effective mass and scattering times (1998) (40)
- Room‐Temperature Active Modulation of Valley Dynamics in a Monolayer Semiconductor through Chiral Purcell Effects (2019) (40)
- Multi-scale modeling of gas-phase reactions in metal-organic chemical vapor deposition growth of WSe2 (2019) (39)
- Tensile stress generation and dislocation reduction in Si-doped AlxGa1−xN films (2009) (39)
- LASERS, OPTICS, AND OPTOELECTRONICS 397 Near-field optical spectroscopy using an incoherent light source (2000) (38)
- Modification of critical current density of MgB2 films irradiated with 200 MeV Ag ions (2004) (37)
- Formation of nickel germanide contacts to Ge nanowires (2010) (37)
- Dependence of penetration depth, microwave surface resistance and energy gap of MgB2 thin films on their normal-state resistivity (2004) (37)
- Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films (2016) (37)
- Effect of growth conditions on the composition and structure of Si1?xGex nanowires grown by vapor?liquid?solid growth (2006) (36)
- Nickel and nickel silicide Schottky barrier contacts to n-type silicon nanowires (2008) (35)
- Fabrication and characterisation of enhanced barrier AlGaN/GaN HFET (1999) (35)
- Effect of damage by 2 MeV He ions and annealing on Hc2 in MgB2 thin films (2005) (35)
- Structural and electrical properties of epitaxial Bi2Se3 thin films grown by hybrid physical-chemical vapor deposition (2012) (35)
- Facet roughness analysis for InGaN/GaN lasers with cleaved facets (1998) (35)
- Temperature-Dependent Properties of Nearly Ideal ZnO Schottky Diodes (2009) (35)
- Temperature dependence and current transport mechanisms in AlxGa1−xN Schottky rectifiers (2000) (34)
- Growth and Characterization of Unintentionally Doped GaSb Nanowires (2010) (34)
- Progress in the deposition of MgB2 thin films (2004) (34)
- Effect of disorder in MgB 2 thin films (2005) (33)
- In situ axially doped n-channel silicon nanowire field-effect transistors. (2008) (33)
- Oxidation of silicon nanowires for top-gated field effect transistors (2008) (33)
- SQUID magnetometer operating at 37K based on nanobridges in epitaxial MgB2 thin films (2005) (32)
- Metalorganic chemical vapor deposition of N-polar GaN films on vicinal SiC substrates using indium surfactants (2012) (31)
- Local electrode atom probe analysis of silicon nanowires grown with an aluminum catalyst (2012) (31)
- Effect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor deposition (2010) (31)
- Dislocation bending and tensile stress generation in GaN and AlGaN films (2012) (31)
- Multidimensional thermal analysis of an ultrawide bandgap AlGaN channel high electron mobility transistor (2019) (30)
- Schottky Diodes on MOCVD Grown AlGaN Films. (1998) (30)
- In situ stress measurements during MOCVD growth of AlGaN on SiC (2004) (29)
- Evolution of threading dislocations in MOCVD-grown GaN films on (1 1 1) Si substrates (2007) (29)
- Epitaxial Growth of Two-Dimensional Layered Transition Metal Dichalcogenides (2019) (29)
- Vapor-Liquid-Solid Growth of Semiconductor Nanowires (2015) (29)
- Chalcogen Precursor Effect on Cold-Wall Gas-Source Chemical Vapor Deposition Growth of WS2 (2018) (29)
- Planar MgB2 superconductor-normal metal-superconductor Josephson junctions fabricated using epitaxial MgB2∕TiB2 bilayers (2006) (28)
- A near‐field scanning optical microscopy study of the photoluminescence from GaN films (1996) (28)
- High-Jc MgB2 Josephson junctions with operating temperature up to 40 K (2010) (27)
- Fundamental limitations in transferred CVD graphene caused by Cu catalyst surface morphology (2020) (27)
- Upper critical fields up to 60 T in dirty magnesium diboride thin films (2004) (27)
- Light–matter coupling in large-area van der Waals superlattices (2021) (27)
- Suppression of the vapor–liquid–solid growth of silicon nanowires by antimony addition (2009) (27)
- Erratum: High-field superconductivity in alloyed Mg B2 thin films (Physical Review B- Condensed Matter and Materials Physics (2005) 71 (012504)) (2005) (27)
- In-plane x-ray diffraction for characterization of monolayer and few-layer transition metal dichalcogenide films (2018) (27)
- Surface morphology and thickness dependence of the properties of MgB2 thin films by hybrid physical–chemical vapor deposition (2010) (26)
- Substrate effects on GaN photoconductive detector performance (1999) (26)
- Terahertz surface impedance of epitaxial MgB2 thin film (2005) (26)
- Resistivity measurements of intentionally and unintentionally template-grown doped silicon nanowire arrays (2007) (25)
- In situ observation of coalescence-related tensile stresses during metalorganic chemical vapor deposition of GaN on sapphire (2005) (25)
- Vibrational and optical properties of GaN nanowires synthesized by Ni-assisted catalytic growth (2007) (25)
- In situ growth of MgB/sub 2/ thin films by hybrid physical-chemical vapor deposition (2003) (24)
- Scanning capacitance microscopy of AlGaN/GaN heterostructure field-effect transistor epitaxial layer structures (1999) (24)
- Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition (2008) (23)
- FDTD modeling of solar energy absorption in silicon branched nanowires. (2013) (23)
- In situ measurement of stress generation arising from dislocation inclination in AlxGa1−xN:Si thin films (2008) (22)
- High-field properties of carbon-doped MgB2 thin films by hybrid physical–chemical vapor deposition using different carbon sources (2011) (22)
- Scanning electron microscope studies of AlGaN films grown by organometallic vapor phase epitaxy (1998) (22)
- Electron scattering dependence of dendritic magnetic instability in superconducting MgB2 films (2004) (22)
- AlGaN/GaN heterostructure field-effect transistors (1999) (21)
- Effect of AlN buffer layers on the surface morphology and structural properties of N-polar GaN films grown on vicinal C-face SiC substrates (2013) (21)
- Understanding Interlayer Coupling in TMD-hBN Heterostructure by Raman Spectroscopy (2018) (21)
- Nanoscale disorder in high critical field, carbon-doped MgB2 hybrid physical-chemical vapor deposition thin films (2007) (21)
- Ultrafast Electrical Measurements of Isolated Silicon Nanowires and Nanocrystals. (2014) (21)
- Model development of GaN MOVPE growth chemistry for reactor design (2000) (20)
- Single wire radial junction photovoltaic devices fabricated using aluminum catalyzed silicon nanowires (2011) (20)
- Current limitation after pinch-off in AlGaN/GaN FETs (2000) (20)
- Effect of reactor pressure on catalyst composition and growth of GaSb nanowires (2010) (20)
- Characterization of rhenium Schottky contacts on n-type AlxGa1-xN (1999) (20)
- Photoelastic waveguides and the controlled introduction of strain in III‐V semiconductors by means of thin film technology (1995) (20)
- Effect of polarity on the growth of InN films by metalorganic chemical vapor deposition (2008) (19)
- Degradation of MgB/sub 2/ thin films in water (2005) (19)
- Phase Formation and Morphology in Nickel and Nickel/Gold Contacts to Gallium Nitride (1997) (18)
- Growth of Thick MgB2 Films by Impinging‐Jet Hybrid Physical‐Chemical Vapor Deposition (2008) (18)
- Thin Film Transistors Using Wafer-Scale Low-Temperature MOCVD WSe2 (2016) (18)
- Clean epitaxial MgB2 films fabricated by the ex situ annealing of chemical vapour deposition-grown B films in Mg vapour (2008) (17)
- MOVPE Growth of High Electron Mobility AlGaN/GaN Heterostructures (1995) (17)
- The effect of polarity on MOCVD growth of thick InGaN (2017) (17)
- Long Time-Constant Trap Effects in Nitride Heterostructure Field Effect Transistors (2000) (17)
- Fabrication of Cobalt Silicide Nanowire Contacts to Silicon Nanowires (2003) (17)
- Evolution of Threading Dislocation Density and Stress in GaN Films Grown on (111) Si Substrates by Metalorganic Chemical Vapor Deposition (2007) (17)
- Evolution of surface morphology and film stress during MOCVD growth of InN on sapphire substrates (2004) (16)
- Epitaxial growth of few-layer β-In2Se3 thin films by metalorganic chemical vapor deposition (2020) (16)
- Gate recessing of GaN MESFETs using photoelectrochemical wet etching (1999) (16)
- Effect of substrate on the growth and properties of thin 3R NbS2 films grown by chemical vapor deposition (2018) (16)
- Hexagonal Boron Nitride Crystal Growth from Iron, a Single Component Flux. (2021) (16)
- Charging effects in AlGaN/GaN heterostructures probed using scanning capacitance microscopy (2000) (15)
- Effect of Illumination on the Electrical Characteristics of AlGaN/GaN FETs (1999) (15)
- Monolayer MoS2 on sapphire: an azimuthal reflection high-energy electron diffraction perspective (2020) (15)
- Hexagonal Boron Nitride Single Crystal Growth from Solution with a Temperature Gradient (2020) (15)
- Crystallographic Wet Chemical Etching of p‐Type GaN (2000) (15)
- Raman scattering in pure and carbon-doped Mg B 2 films (2005) (15)
- Vapor—Liquid—Solid Growth of Silicon—Germanium Nanowires. (2004) (15)
- Locally defined quantum emission from epitaxial few-layer tungsten diselenide (2019) (15)
- Scalable Substitutional Re‐Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide (2020) (15)
- A simple reflectance method for estimation of the Al mole fraction of bulk AlGaN and AlGaN/GaN heterostructures (1999) (14)
- Gas phase equilibrium limitations on the vapor–liquid–solid growth of epitaxial silicon nanowires using SiCl 4 (2011) (14)
- Atomic layer deposition of ZnO on MoS2 and WSe2 (2019) (14)
- Modeling studies of the chemical vapor deposition of boron films from B2H6 (2007) (14)
- Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure (1997) (14)
- Transport and Reaction Behaviors of Precursors during Metalorganic Vapor Phase Epitaxy of Gallium Nitride (1999) (14)
- Multi-wafer batch synthesis of graphene on Cu films by quasi-static flow chemical vapor deposition (2019) (14)
- Sulfidation of 2D transition metals (Mo, W, Re, Nb, Ta): thermodynamics, processing, and characterization (2017) (14)
- The effect of pattern density and wire diameter on the growth rate of micron diameter silicon wires (2011) (13)
- All-in-one, bio-inspired, and low-power crypto engines for near-sensor security based on two-dimensional memtransistors (2022) (13)
- AlGaN/GaN MODFETs on semi-insulating SiC with 3 W/mm at 20 GHz (2000) (13)
- Nanoscale disorder in pure and doped MgB2 thin films (2010) (13)
- Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source (1994) (13)
- Influence of growth stress on the surface morphology of N-polar GaN films grown on vicinal C-face SiC substrates (2013) (13)
- Growth studies of erbium-doped GaAs deposited by metalorganic vapor phase epitaxy using novel cyclopentadienyl-based erbium sources (1994) (13)
- Properties of MgB2 films grown at various temperatures by hybrid physical–chemical vapour deposition (2008) (13)
- Aluminum-catalyzed silicon nanowires: Growth methods, properties, and applications (2016) (12)
- Controlled growth of SiNPs by plasma synthesis (2014) (12)
- SF6∕O2 plasma effects on silicon nitride passivation of AlGaN∕GaN high electron mobility transistors (2006) (12)
- Plasma Surface Pretreatment Effects on Silicon Nitride Passivation of AlGaN/GaN HEMTs (2007) (12)
- Growth and process modeling studies of nickel-catalyzed metalorganic chemical vapor deposition of GaN nanowires (2009) (12)
- Thermodynamic equilibrium limitations on the growth of SiC by halide chemical vapor deposition (2007) (12)
- Effect of Ge doping on growth stress and conductivity in AlxGa1-xN (2019) (11)
- High quality MgB2 thick films and large-area films fabricated by hybrid physical–chemical vapor deposition with a pocket heater (2008) (11)
- Thickness dependence of critical current density in MgB2 films fabricated by ex situ annealing of CVD-grown B films in Mg vapor (2008) (11)
- Synthesis, characterization and chemical stability of silicon dichalcogenides, Si(SexS1-x)(2) (2016) (11)
- Synthesis and properties of Si and SiGe/Si nanowires (2004) (11)
- Local electronic properties of AlGaN/GaN heterostructures probed by scanning capacitance microscopy (1999) (11)
- Optically pumped InGaN/GaN lasers with wet-etched facets (2000) (10)
- Modeling for Structural Engineering and Synthesis of Two-Dimensional WSe2 Using a Newly Developed ReaxFF Reactive Force Field (2020) (10)
- GaN-Based Gunn Diodes : Their Frequency and Power Performance and Experimental Considerations (2001) (10)
- Illuminating Invisible Grain Boundaries in Coalesced Single-Orientation WS2 Monolayer Films. (2020) (10)
- Carbon-doped MgB/sub 2/ thin films grown by hybrid physical-chemical vapor deposition (2005) (10)
- Effects of a compositionally graded buffer layer on stress evolution during GaN and AlxGa1-xN MOCVD on SiC substrates (2008) (10)
- Enhancement of superconducting transition temperature in MgB 2 by strain-induced bond-stretching mode softening (2004) (10)
- OPTICALLY PUMPED INGAN/GAN DOUBLE HETEROSTRUCTURE LASERS WITH CLEAVED FACETS (1998) (10)
- An Al Ga N/GaN Undoped Channel Heterostructure Field Effect Transistor with of 107 GHz (1999) (10)
- Realization and Characterization of Ultrathin GaAs‐on‐Insulator Structures (1999) (9)
- Study of silicon incorporation from SiH4 in GaAs layers grown by metalorganic vapor phase epitaxy using tertiarybutylarsine (1994) (9)
- Controlled synthesis of 2 D transition metal dichalcogenides : from vertical to planar MoS 2 (2016) (8)
- Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001) (1996) (8)
- Interface structures in MgB2 thin films on (0001) SiC (2004) (8)
- Controlling silicon crystallization in aluminum-induced crystallization via substrate plasma treatment (2017) (8)
- Top-gated field effect devices using oxidized silicon nanowires (2005) (8)
- Vapor-liquid-solid growth of ⟨110⟩ silicon nanowire arrays (2013) (8)
- Parametric study of micropillar array solar cells (2011) (8)
- Magneto-optical imaging studies of flux propagation in ultra-pure and carbon-doped MgB/sub 2/ thin films (2005) (8)
- Molecular Doping Control at a Topological Insulator Surface: F4-TCNQ on Bi2Se3 (2014) (8)
- Microwave and Terahertz Surface Resistance of MgB2 Thin Films (2007) (8)
- In situ stress measurements during direct MOCVD growth of GaN on SiC (2015) (8)
- Polycrystalline ${\rm MgB}_{2}$ Films on Flexible YSZ Substrates Grown by Hybrid Physical-Chemical Vapor Deposition (2007) (8)
- Deposition and Properties of Superconducting MgB2 Thin Films (2003) (8)
- GaN films studied by near-field scanning optical microscopy, atomic force microscopy and high resolution X-ray diffraction (1997) (7)
- The effect of controlled impurity incorporation on interfacial roughness in GaAs/AlxGa1−xAs superlattice structures grown by metalorganic vapor phase epitaxy (1994) (7)
- Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells (2010) (7)
- Interdependence of Electronic and Thermal Transport in AlxGa1–xN Channel HEMTs (2020) (7)
- Defect creation in WSe2 with a microsecond photoluminescence lifetime by focused ion beam irradiation. (2020) (7)
- Fabrication and Electrical Characterization of Silicon Nanowire Arrays (2004) (7)
- Active pixel sensor matrix based on monolayer MoS2 phototransistor array (2022) (7)
- Dual-Heater Reactor Design for Hybrid Physical-Chemical Vapor Deposition of ${\rm MgB}_{2}$ Thin Films (2007) (6)
- Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1−xN (2010) (6)
- Uniform p-type doping of silicon nanowires synthesized via vapor-liquid-solid growth with silicon tetrachloride (2017) (6)
- Prepassivation surface treatment effects on pulsed and dc I-V performance of AlGaN∕GaN high-electron-mobility transistors (2008) (6)
- Experimental Demonstration of Charge- Balanced GaN Super-Heterojunction Schottky Barrier Diode Capable of 2.8 kV Switching (2020) (6)
- Quantitative analysis of nanoscale electronic properties in an AlxGa1−xN/GaN heterostructure field-effect transistor structure (2001) (6)
- Substrate Modification during Chemical Vapor Deposition of hBN on Sapphire. (2021) (6)
- Silicon Micro/Nanowire Solar Cells (2016) (5)
- Lithography-free synthesis of freestanding gold nanoparticle arrays encapsulated within dielectric nanowires (2010) (5)
- Hybrid physical–chemical vapor deposition of Bi2Se3 films (2016) (5)
- Aluminum-Catalyzed Growth of ‹110› Silicon Nanowires (2015) (5)
- Heteroepitaxy of Highly Oriented GaN Films on Non‐Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum‐Induced Crystallization (2018) (5)
- In Situ Stress Measurements During GaN Growth on Ion-Implanted AlN/Si Substrates (2012) (5)
- Pre-passivation Plasma Surface Treatment Effects on Critical Device Electrical Parameters of AlGaN/GaN HEMTs (2008) (5)
- Nitride Based High Power Devices: Transport Properties, Linear Defects And Goals (1998) (5)
- The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si(111) substrates (2014) (5)
- Silicon nanowire growth on poly‐silicon‐on‐quartz substrates formed by aluminum‐induced crystallization (2013) (4)
- Group III-A Nitrides on Si: Stress and Microstructural Evolution (2016) (4)
- Inversion-mode Operation of Thermally-oxidized Modulation-doped Silicon Nanowire Field Effect Devices (2006) (4)
- Heteroepitaxial growth of GaN on vertical Si{110} sidewalls formed on trench-etched Si(001) substrates (2016) (4)
- Fabrication of Smooth GaN-Based Laser Facets (1998) (4)
- Strain‐induced band‐gap modulation in GaAs/AlGaAs quantum‐well structure using thin‐film stressors (1996) (4)
- A Roadmap for Electronic Grade 2-Dimensional Materials (2018) (4)
- Effect of c-Si doping density on heterojunction with intrinsic thin layer (HIT) radial junction solar cells (2013) (4)
- Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates (2011) (4)
- Seeding of silicon wire growth by out-diffused metal precipitates. (2011) (4)
- Carrier gas effects on aluminum-catalyzed nanowire growth (2016) (4)
- Atomic-Scale Probing of Defect-Assisted Ga Intercalation Through Graphene Using ReaxFF Molecular Dynamics Simulations (2021) (4)
- Theoretical modeling of edge-controlled growth kinetics and structural engineering of 2D-MoSe2 (2021) (4)
- In situ stress measurements during MOCVD growth of thick N-polar InGaN (2017) (4)
- Disorder dominated microwave conductance spectra of doped silicon nanowire arrays. (2008) (4)
- Controlled faceting and morphology for light trapping in aluminum-catalyzed silicon nanostructures (2016) (4)
- Formation of metal vacancy arrays in coalesced WS2 monolayer films (2020) (4)
- Orientation domain dispersions in wafer scale epitaxial monolayer WSe2 on sapphire (2021) (4)
- High-Density, Localized Quantum Emitters in Strained 2D Semiconductors. (2022) (4)
- Magnetotransport phenomena in Bi2Se3 thin film topological insulators grown by hybrid physical chemical vapor deposition (2015) (3)
- High density group IV semiconductor nanowire arrays fabricated in nanoporous alumina templates (2005) (3)
- Transport coefficients of AlGaN/GaN heterostructures (1998) (3)
- Raman Scattering from Si$_{1-x}$Ge$_{x}$ Alloy Nanowires (2007) (3)
- Study on Axial and Radial Heterostructures of Si-Ge and Si-SiGe Nanowires (2005) (3)
- Chemical vapor deposition of fine-grained equiaxed tungsten films (1991) (3)
- Preparation and Evaluation of Damage Free Surfaces on Silicon Carbide (2006) (3)
- Radial Junction Silicon Nanowire Photovoltaics With Heterojunction With Intrinsic Thin Layer (HIT) Structure (2016) (3)
- The effects of shell layer morphology and processing on the electrical and photovoltaic properties of silicon nanowire radial p+ - n+ junctions. (2015) (3)
- Wafer-scale epitaxial growth of single orientation WS2 monolayers on sapphire (2020) (3)
- Study of the growth mechanism and properties of InN films grown by MOCVD (2003) (3)
- Dislocation Distribution and Subgrain Structure of GaN Films Deposited on Sapphire by HVPE and MOVPE (1997) (3)
- Investigations of MgB/sub 2//MgO and MgB/sub 2//AlN heterostructures for Josephson devices (2005) (3)
- Measurement of the Al mole fraction of bulk AlGaN and AlGaN/GaN heterostructure by photoconductance method (1999) (3)
- Erratum: “Properties of MgB2 thin films with carbon doping” [Appl. Phys. Lett. 85, 2017 (2004)] (2006) (3)
- Heterogeneous Integration of Atomically Thin Semiconductors for Non-von Neumann CMOS. (2022) (3)
- The Chemistry of GaN Growth (2000) (3)
- MOVPE GaN Gas-Phase Chemistry for Reactor Design and Optimization (1996) (3)
- Study of Silicon Incorporation in GaAs Movpe Layers Grown With Tertiarybutylarsine (1993) (3)
- Comment on “Lasing Emission from an In0.1Ga0.9N Vertical Cavity Surface Emitting Laser” (1999) (3)
- Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate (2013) (3)
- Planar MgB$_{2}$ superconductor-normal metal-superconductor Josephson junctions (2006) (2)
- Low-temperature processed beta-phase In2Se3 ferroelectric semiconductor thin film transistors (2022) (2)
- Hydrostatic and uniaxial stress dependence and photo induced effects on the channel conductance of n-A1GaN/GaN heterostructures grown on sapphire substrates (1999) (2)
- Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices (2022) (2)
- X-Ray Diffraction Determination of Interface Roughness in GaAs/Al x Ga 1-x As Multilayers (1993) (2)
- Hardware implementation of Bayesian network based on two-dimensional memtransistors (2022) (2)
- Piezoelectric enhancement of Schottky barrier heights in GaN-AlGaN HFET structures (1998) (2)
- Influence of Impurities On Mechanisms of Growth in Movpe GaAs (1994) (2)
- Gas source chemical vapor deposition of hexagonal boron nitride on C-plane sapphire using B2H6 and NH3 (2021) (2)
- Persistent photoconductivity in AlGaN films Grown by mocvd (1998) (2)
- Influence of the Underlying Substrate on the Physical Vapor Deposition of Zn-Phthalocyanine on Graphene (2021) (2)
- Study on Chemical Vapor Deposition Growth and Transmission electron Microscopy MoS 2 /h-BN Heterostructure (2016) (2)
- Ti/Al ohmic contacts to n-type GaN nanowires (2011) (2)
- Light Emission Properties of GaN-Based Double Heterostructures and Quantum Wells (1995) (2)
- ${\rm MgB}_{2}/{\rm MgO/MgB}_{2}$ Josephson Junctions for High-Speed Circuits (2011) (2)
- Generation and Properties of Semi-Insulating SiC Substrates (2000) (2)
- Confocal Photoluminescence and Cathodoluminescence Studies of AlGaN (2003) (2)
- A computational framework for guiding the MOCVD-growth of wafer-scale 2D materials (2022) (2)
- MgB2 Films, Fibres and Heterostructures Grown by an Innovative Hybrid Physical-Chemical Vapor Deposition Technique (2006) (2)
- Modeling studies of an impinging jet reactor design for hybrid physical–chemical vapor deposition of superconducting MgB2 films (2009) (2)
- Cover Picture: Nanometer‐Scale Modification and Welding of Silicon and Metallic Nanowires with a High‐Intensity Electron Beam (Small 12/2005) (2005) (2)
- Axially-doped silicon nanowire field effect transistors for real-time sensing in physiologically relevant buffer solutions (2009) (2)
- Selective plating for junction delineation in silicon nanowires. (2007) (2)
- A ReaxFF Force Field for 2D-WS2 and Its Interaction with Sapphire (2021) (2)
- Temperature-Dependent RF Characteristics of Al₂O₃-Passivated WSe₂ MOSFETs (2020) (1)
- Gallium arsenate removal from waste waters (2005) (1)
- S/TEM Characterization of Vertical Heterostructures Formed by Mono- to Multi-layer Graphene and WSe2 (2021) (1)
- Electrical properties of p- and n-type silicon nanowires (2004) (1)
- Di ff usion-Controlled Epitaxy of Large Area Coalesced WSe 2 Monolayers on Sapphire (2018) (1)
- GaN growth on Si pillar arrays by metalorganic chemical vapor deposition (2013) (1)
- AlGaN/GaN High Electron Mobility Transistor Structure Design and Effects on Electrical Properties (1999) (1)
- Growth of Thick MgB2 Films by Impinging-Jet Hybrid Physical-Chemical Vapor Deposition. (2008) (1)
- Aluminum-Catalyzed Growth of Silicon Nanowires in High-Energy Growth Directions (2018) (1)
- Stress and Microstructure Evolution in Compositionally Graded Al 1-x Ga x N Buffer Layers for GaN Growth on Si (2005) (1)
- METHOD OF STUDY GALLIUM AND ARSENIC LOSSES IN TECHNOLOGY OF GALLIUM ARSENATE OBTAINED FROM WASTES (2005) (1)
- Quantification of Metal Atom Ordering in Engineered W1-xMoxS2 Monolayers (2022) (1)
- Bioinspired and Low-Power 2D Machine Vision with Adaptive Machine Learning and Forgetting. (2021) (1)
- Proceedings 2000 IEEE/CornelI Conference on High Performance Devices (2000) (1)
- Intrinsic mobility limits of a two-dimensional electron gas in AlGaN/GaN heterostructures (1996) (1)
- Ion-Implantation-Induced Damage Characteristics Within AlN and Si for GaN-on-Si Epitaxy (2013) (1)
- Growth Mechanisms and Size-Dependent Characteristics of Si and Si1-xGex Nanowires (2009) (1)
- Van der Waals epitaxy and composition control of layered SnSxSe2−x alloy thin films (2020) (1)
- Heteroepitaxy of Highly Oriented GaN Films on Non-Single Crystal Substrates Using a Si(111) Template Layer Formed by Aluminum-Induced Crystallization (Phys. Status Solidi RRL 3/2018) (2018) (1)
- GaN Heteroepitaxy on Strain-Engineered (111) Si/Si1−xGex (2019) (1)
- Epitaxial InGaN on nitridated Si(111) for photovoltaic applications (2012) (1)
- Two-dimensional materials-based probabilistic synapses and reconfigurable neurons for measuring inference uncertainty using Bayesian neural networks (2022) (1)
- InGaN Double-Heterostructures and Dh-Leds on Hvpe Gan-on-Sapphire Substrates (1997) (1)
- Diameter Dependence of Ge-doped Si Nanowires Fabricated via Vapor-Liquid-Solid Growth (2007) (1)
- Size Effects in the Vapor-Liquid Solid (VLS) Growth of Semiconductor Nanowires (2008) (1)
- Substrate effects on GaN photodetector performance (1997) (1)
- Graphene stabilization of two-dimensional gallium nitride (2015) (1)
- Growth-microstructure-thermal property relations in AlN thin films (2022) (1)
- Photoluminescence Induced by Substitutional Nitrogen in Single-Layer Tungsten Disulfide. (2022) (1)
- Degradation of Thin Films in Water (2005) (1)
- AlGaN Microwave Power HFETs on Insulating SiC Substrates (1999) (1)
- Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth (2007) (0)
- Surface treatment of p-GaN by KOH solution studied by synchrtron radiation core-level spectroscopy (1999) (0)
- Mocvd of Wse2 Crystals on Highly Crystalline Single- and Multi-Layer Cvd Graphene (2022) (0)
- GaN, AlN, InN and Related Materials (Materials Research Society Symposium Proceedings, vol 892) (2006) (0)
- Hybrid Physical-Chemical Vapor Deposition of MgB$_{2}$ Film on Flexible Dielectric and Metallic Substrates (2006) (0)
- AlGaN/GaN Heterostructures: Effective Mass (1997) (0)
- Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides (2007) (0)
- Tuning of the electronic and vibrational properties of epitaxial MoS2 through He-ion beam modification (2022) (0)
- Multiscale Modeling for MOCVD Synthesis and Characterization of Transition Metal Dichalcogenides (2020) (0)
- A modeling study of GaN growth by MOVPE (1995) (0)
- Clean Epitaxial MgB2 Films Fabricated by Ex Situ Annealing of CVD-Grown B Films in Mg Vapor (2008) (0)
- Parametric study of micropillar array solar cells | NIST (2011) (0)
- Metalorganic chemical vapor deposition of Bi2Se3 thin films for topological insulator applications (2014) (0)
- InGaN/GaN double-heterostructure LEDs on HVPE GaN-on-sapphire substrates (1998) (0)
- Chiral Metamaterials: Room‐Temperature Active Modulation of Valley Dynamics in a Monolayer Semiconductor through Chiral Purcell Effects (Adv. Mater. 49/2019) (2019) (0)
- Controlled Impurity Introduction In CVD: Chemical, Electrical, and Morphological Influences (1993) (0)
- (Invited) III-Nitrides for Vacuum Nanoelectronics (0)
- Heterostructures for Josephson Devices (2005) (0)
- Sodium chloride induced heterogeneities in epitaxial molybdenum disulfide (2018) (0)
- Universal disorder in the microwave conductance spectra of doped silicon nanowire arrays (2008) (0)
- Co-deposition of MoS2 films by reactive sputtering and formation of tree-like structures (2022) (0)
- Fabrication of axially-doped silicon nanowire tunnel FETs and characterization of tunneling current (2010) (0)
- CVD-based approach to the growth of epitaxial MgB2 thin films (2002) (0)
- Carbon-Doped Thin Films Grown by Hybrid Physical-Chemical Vapor Deposition (2005) (0)
- Interfacial Roughness in GaAs/A1GaAs Multilayers: Influence of Controlled Impurity Addition (1994) (0)
- Nanotextured solar cells using aluminum as a catalyst and dopant (2017) (0)
- Deep Levels In High Resistivity AlGaN Films Grown By MOCVD (1998) (0)
- Direct write of resistive lines on SiC (2003) (0)
- Carbon Doped MgB2 Thin Films using TMB (2007) (0)
- A Monolithic Stochastic Computing Architecture for Energy Efficient Arithmetic (2022) (0)
- Interface State Disorder Dominated Microwave Conductance in Silicon Nanowires (2009) (0)
- High-Performance Nanomechanical Oscillators Fabricated by Bottom-up Integration of Silicon Nanowires (2006) (0)
- High Aspect Ratio Semiconductor Heterojunction Solar Cells (2013) (0)
- Deterministic assembly of functionalized nanowire devices onto Si CMOS for multiplexed biosensor chips (2010) (0)
- UV and White Light LEDs (2014) (0)
- New Si CVD precursors: preparation and pre-screening (1995) (0)
- Mechanical Property Characterization for Nanowires (2006) (0)
- Effect of ion irradiation and annealing on scattering processes in MgB2 (2006) (0)
- The Effects of Different Ambient Environments on the Electrical Properties of Bi$_{2}$Se$_{3}$ Thin Films over Time (2013) (0)
- Study of wafer thickness scaling in n-type rear-emitter solar cells with different bulk lifetimes (2014) (0)
- Support for the 19th International Conference on Crystal Growth and Epitaxy (2021) (0)
- Hardware Acceleration of Bayesian Network based on Two-dimensional Memtransistors (2022) (0)
- Yellow photoluminescence in MOCVD-grown n-type GaN (1998) (0)
- Room Temperature Photonic Crystal Surface Emitting Laser with Synthesized Monolayer Tungsten Disulfide (2018) (0)
- (Invited) Epitaxial Growth of 2D Transition Metal Dichalcogenide Monolayers, Alloys and Heterostructures (2018) (0)
- Topological insulator properties of Bi$_{2}$Se$_{3}$ thin films grown by HPCVD (2014) (0)
- A Monolithic Stochastic Computing Architecture for Energy and Area E�cient Arithmetic (2022) (0)
- Benchmarking monolayer MoS2 and WS2 field-effect transistors (2021) (0)
- High Resolution X-ray Diffraction Analysis of Gallium Nitride/Silicon Carbide Heterostructures (1999) (0)
- (Invited) Epitaxial Growth of Transition Metal Dichalcogenide Monolayers for Large Area Device Applications (2022) (0)
- Atomic Structure of W1-xMoxS2 Alloys and Heterostructures (2018) (0)
- GaN Based Electronic Device and Sensors on Silicon (2014) (0)
- Luminescence Properties of Si-Doped GaN and Evidence of Compensating Defects As the Origin of the Yellow Luminescence (1997) (0)
- Epitaxial growth of wafer-scale transition metal dichalcogenide monolayers by metalorganic chemical vapor deposition (2022) (0)
- Small signal and power performance of AlGaN/GaN HFETs grown on s.i.SiC (2000) (0)
- Stimulated Emission from Single- and Multiple-Quantum-Well GaN-AlGaN Separate-Confinement Heterostructures (1996) (0)
- Ultraviolet-induced Photoluminescence Degradation and Enhancement in GaN (1998) (0)
- Interface State Disorder Dominated Microwave Conductance in (2008) (0)
- Light-driven C-H bond activation mediated by 2D transition metal dichalcogenides (2022) (0)
- 6. Structural Changes in Nanoporous MFI Zeolites Induced by Tetrachloroethene Adsorption: A Joint Experimental and Simulation Study (2011) (0)
- Effect of carbon doping on pinning force in MgB2 films (2005) (0)
- Growth of MgB$_{2}$ Films by an Impinging Jet HPCVD Reactor Design (2008) (0)
- Microwave Dissipation Spectra in Arrays of Silicon Nanowires (2007) (0)
- (Invited) Unidirectional Epitaxy of TMD Monolayers on Sapphire (2021) (0)
- Microwave Conductivity of Silicon Nanowire Arrays (2007) (0)
- Increasing superconducting transition temperature in MgB 2 by epitaxial tensile strain (2004) (0)
- Measurement of Al mole fraction of bulk AlGaN and AlGaN/GaN heterostructures by photoconductance and reflectance methods (1999) (0)
- Surface modification of 6H SiC by laser direct-write (2001) (0)
- Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires (2011) (0)
- Comparative Study of GaN Growth Process by MOVPE (1999) (0)
- High Resolution S/TEM Study of Defects in MOCVD Grown Mono to Few Layer WS2 (2018) (0)
- Photoelectrochemistry of Semiconductor Nanowire Arrays (2009) (0)
- Author Correction: A computational framework for guiding the MOCVD-growth of wafer-scale 2D materials (2022) (0)
- Effect of ion damage on the electrical properties of MgB2 (2005) (0)
- InGaN/GaN double heterostructure laser with cleaved facets (1998) (0)
- 16th International Conference on Metalorganic Vapor Phase Epitaxy (2013) (0)
- Anisotropic Magnetoresistance in Clean Epitaxial MgB2 Thin Films on SiC Substrates (2004) (0)
- Upper Critical Field of Carbon-doped MgB$_{2}$ Thin Films by HPCVD Using TMB (2010) (0)
- INHOMOGENEITIES AND DEFECTS IN GAN AND ALGAN EPYTAXIAL LAYERS STUDIED BY SEM (1998) (0)
- Ultrascaled Contacts to Monolayer MoS2 Field Effect Transistors. (2023) (0)
- Observation of Second-Harmonic Generation from Wurzite AlxGa1-xN Multilayers in Reflection Geometry (2007) (0)
- Characterization of rhenium Schottky contacts on n-type A1xGa1-xN at high temperatures (1999) (0)
- Scalable CMOS-BEOL compatible AlScN/2D Channel FE-FETs (2022) (0)
- Fabrication and Optical Pumping of Laser Cavities Made by Cleaving and Wet Chemical Etching (1997) (0)
- Upper Critical Field in C-Doped MgB2 Thin Films and Coated Fibers (2005) (0)
- Epitaxial growth of magnesium diboride thin films by hybrid physical-chemical vapor deposition (2004) (0)
- Upper critical field and anisotropy in carbon alloyed MgB$_2$ thin films (2006) (0)
- Cathodoluminescence spatially resolves optical transitions in thick group-III and N-polar InGaN films (2020) (0)
- Effects of Silicon Doping and Threading Dislocation Density on Stress Evolution in AlGaN Films (2012) (0)
- Nanotextured solar cells using aluminum as a catalyst and dopant (2016) (0)
- Zero bias conductance peak anomaly in topological insulator - superconductor junctions (2013) (0)
- Photoelastic Waveguides Formed by Interfacial Reactions on Semiconductor Heterostructures (1993) (0)
- Axially-doped n+-p−-n+ and p+-n−-p+ silicon nanowires: vapor-liquid-solid growth and field effect transistor characterization (2008) (0)
- Carbon-doped M9B2 thin films grown by hybrid physical-chemical vapor deposition (2005) (0)
- Clean Epitaxial MgB}$_{2}$\textbf{ Films Fabricated by \textit{Ex Situ} Annealing of CVD-Grown B Films in Mg Vapor (2008) (0)
- Hybrid Physical-Chemical Vapor Deposition of Bi$_{2}$Se$_{3}$ Thin films on Sapphire (2012) (0)
- Crystallographic orientation-dependent dynamics in individual silicon nanowires (2017) (0)
- (Invited) Wafer-Scale Epitaxy of Transition Metal Dichalcogenides By MOCVD (2020) (0)
- Toward a Mechanistic Understanding of the Formation of 2D-GaNx in Epitaxial Graphene. (2022) (0)
- Evolution of Threading Dislocations in GaN Films Grown on (111) Si Substrates with Various Buffer Layers (2006) (0)
- Thickness dependence of the properties of MgB$_{2}$ films grown by hybrid physical-chemical vapor deposition (2006) (0)
- Invited) Epitaxy of 2D Transition Metal Dichalcogenide Monolayers and Heterostructures (2018) (0)
- Development of Doped and Heterostructured Si-Ge Nanowires (2004) (0)
- III-V nitrides and silicon carbide (2002) (0)
- Effects of Pre-Metallization on the MOCVD Growth and Properties of Ge-doped AlGaN on AlN/Sapphire Templates (2022) (0)
- Correlation of Atomic Structure and Luminescence of Two-dimensional MoSe2/WSe2 In-plane Nanodot Heterostructures (2022) (0)
- Upper Critical Field and Anisotropy in Epitaxial C-Doped MgB2 Thin Films (2004) (0)
- Vapor-Liquid-Solid Growth of Si1-xGex and Ge/Si1-xGex Axial Heterostructured Nanowires (2010) (0)
This paper list is powered by the following services:
Other Resources About Joan Redwing
What Schools Are Affiliated With Joan Redwing?
Joan Redwing is affiliated with the following schools: