John Condon Bean

John Condon Bean's AcademicInfluence.com Rankings

John Condon Bean

Physics

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Physics

John Condon Bean's Degrees

PhD Materials Science and Engineering Stanford University

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John Condon Bean's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures (1985) (1487)
GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy (1984) (578)
Band alignments of coherently strained GexSi1−x/Si heterostructures on 〈001〉 GeySi1−y substrates (1986) (290)
Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained‐layer heterostructures [Appl. Phys. Lett. 47, 322 (1985)] (1986) (271)
Measurement of the band gap of GexSi1−x/Si strained‐layer heterostructures (1985) (260)
Modulation doping in GexSi1−x/Si strained layer heterostructures (1984) (257)
Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductors (1980) (227)
Raman scattering from GexSi1−x/Si strained‐layer superlattices (1984) (212)
Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxy (1984) (195)
Silicon-based semiconductor heterostructures: column IV bandgap engineering (1992) (185)
GexSi1−x strained‐layer superlattice waveguide photodetectors operating near 1.3 μm (1986) (183)
Misfit dislocations in lattice-mismatched epitaxial films (1992) (175)
Growth of single‐crystal CoSi2 on Si(111) (1982) (166)
New infrared detector on a silicon chip (1984) (163)
Dependence of residual damage on temperature during Ar+ sputter cleaning of silicon (1977) (154)
Dislocation nucleation near the critical thickness in GeSi/Si strained layers (1989) (137)
Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET's (1986) (135)
Stability of semiconductor strained‐layer superlattices (1986) (133)
Silicon/metal silicide heterostructures grown by molecular beam epitaxy (1980) (132)
Avalanche gain in GexSi1-x/Si infrared waveguide detectors (1986) (127)
Mechanism of organization of three-dimensional islands in SiGe/Si multilayers (1997) (120)
Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100) (1984) (118)
Direct observation of potential distribution across Si/Si p-n junctions using off-axis electron holography (1994) (113)
In situ observations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructures (1988) (113)
Strained-Layer Epitaxy of Germanium-Silicon Alloys (1985) (106)
Acceptor dopants in silicon molecular‐beam epitaxy (1977) (103)
Direct determination of atomic structure at the epitaxial cobalt disilicide on (111) Si interface by ultrahigh resolution electron microscopy (1982) (102)
Nucleation of misfit dislocations in strained-layer epitaxy in the GexSi1−x/Si system (1989) (100)
Interpretation of dislocation propagation velocities in strained GexSi1−x/Si(100) heterostructures by the diffusive kink pair model (1991) (99)
GexSi1−x strained‐layer heterostructure bipolar transistors (1988) (87)
A phenomenological description of strain relaxation in GexSi1−x/Si(100) heterostructures (1989) (86)
Variation in misfit dislocation behavior as a function of strain in the GeSi/Si system (1989) (84)
Enhanced strain relaxation in Si/GexSi1−x/Si heterostructures via point‐defect concentrations introduced by ion implantation (1990) (78)
Silicon MBE apparatus for uniform high-rate deposition on standard format wafers (1982) (75)
Broadband (8-14 μm), normal incidence, pseudomorphic GexSi1-x/Si strained-layer infrared photodetector operating between 20 and 77 K (1992) (71)
Elastic relaxation in transmission electron microscopy of strained‐layer superlattices (1985) (70)
A monolayer of C60 tethered to the surface of an inorganic substrate : assembly and structure (1993) (68)
Ge0.6Si0.4 rib waveguide avalanche photodetectors for 1.3 μm operation (1986) (68)
Germanium silicon : physics and materials (1999) (67)
Arbitrary doping profiles produced by Sb‐doped Si MBE (1978) (67)
Evidence for void interconnection in evaporated amorphous silicon from epitaxial crystallization measurements (1980) (64)
Waveguide infrared photodetectors on a silicon chip (1986) (62)
An efficient method for cleaning Ge(100) surface (1994) (61)
Epitaxial laser crystallization of thin‐film amorphous silicon (1978) (60)
Silicon Molecular Beam Epitaxy (1988) (60)
Self-organized nanostructures in Si1-xGex films on Si(001) (1998) (59)
The Effects of Nucleation and Growth on Epitaxy in the CoSi2/Si System (1982) (58)
Strain relaxation phenomena in GexSi1−x/Si strained structures (1989) (58)
SILICON MOLECULAR BEAM EPITAXY: 1984-1986 (1987) (57)
Growth of GexSi1−x alloys on Si(110) surfaces (1991) (55)
Role of strained layer superlattices in misfit dislocation reduction in growth of epitaxial Ge0.5Si0.5 alloys on Si(100) substrates (1989) (53)
Picosecond transient photocurrents in amorphous silicon (1981) (50)
Hydrogen surface coverage: Raising the silicon epitaxial growth temperature (1989) (49)
Substrate and doping effects upon laser‐induced epitaxy of amorphous silicon (1979) (48)
Microscopic Defects and Infrared Absorption in Cadmium Telluride (1975) (45)
Quantitative analysis of strain relaxation in GexSi1−x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1−x alloys (1992) (43)
Growth of thin silicon films on sapphire and spinel by molecular beam epitaxy (1980) (43)
Observation of a (5 × 5) leed pattern from GexSi1−x(111) alloys (1984) (41)
Changes in electrical device characteristics during the in situ formation of dislocations (1993) (41)
High-speed polysilicon resonant-cavity photodiode with SiO/sub 2/-Si Bragg reflectors (1997) (41)
New insights into the microscopic motion of dislocations in covalently bonded semiconductors by in‐situ transmission electron microscope observations of misfit dislocations in thin strained epitaxial layers (1993) (40)
Short-wavelength, high-speed, Si-based resonant-cavity photodetector (1996) (40)
X‐ray topography of the coherency breakdown in GexSi1−x/Si(100) (1988) (39)
Modulation doping in Ge(x)Si(1-x)/Si strained layer heterostructures: Effects of alloy layer thickness, doping setback, and cladding layer dopant concentration (1985) (38)
Bragg diffraction by amorphous silicon (1987) (38)
Thermal stability of Si/GexSi1−x/Si heterostructures (1989) (37)
Effect of the surface upon misfit dislocation velocities during the growth and annealing of SiGe/Si (001) heterostructures (1998) (36)
Luminescent p‐GaAs grown by zinc ion doped MBE (1979) (36)
Nanowell device for the electrical characterization of metal–molecule–metal junctions (2005) (35)
Improvement in heteroepitaxial film quality by a novel substrate patterning geometry (1992) (35)
First optically active molecular electronic wires. (2006) (35)
High photoconductive gain in GexSi1−x/Si strained-layer superlattice detectors operating at λ-1.3 μm (1986) (35)
Structure imaging of commensurate GexSi1−x/Si(100) interfaces and superlattices (1985) (33)
Designing CMOS/molecular memories while considering device parameter variations (2007) (33)
Effect of structure and impurities on the epitaxial regrowth of amorphous silicon (1980) (33)
Growth of quantum fortress structures in Si1−xGex/Si via combinatorial deposition (2003) (32)
Recent developments in the strained layer epitaxy of germanium-silicon alloys (1986) (32)
Si/SiO2 resonant cavity photodetector (1996) (30)
In-situ transmission electron microscopy studies of the interaction between dislocations in strained SiGe/Si (001) heterostructures (2000) (29)
Detection and measurement of local distortions in a semiconductor layered structure by convergent-beam electron diffraction (1987) (29)
Misfit dislocation propagation kinetics in GexSi1−x/Ge(100) heterostructures (1994) (29)
Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition (1987) (28)
Improved minority‐carrier lifetime in Si/SiGe heterojunction bipolar transistors grown by molecular beam epitaxy (1990) (27)
Design approaches for hybrid CMOS/molecular memory based on experimental device data (2006) (27)
The Growth of Novel Silicon Materials (1986) (26)
Power loss by two‐dimensional holes in coherently strained Ge0.2Si0.8/Si heterostructures: Evidence for weak screening (1986) (26)
Kinematical simulation of high‐resolution x‐ray diffraction curves of GexSi1−x/Si strained‐layer superlattices: A structural assessment (1988) (26)
Silicon MBE: From strained-layer epitaxy to device application (1984) (24)
Normal incidence hole intersubband quantum well infrared photodetectors in pseudomorphic GexSi1 − x/Si (1992) (24)
The Nucleation and Propagation of Misfit Dislocations aear the Critical Thickness in Ge-Si Strained Epilayers (1987) (24)
Study of the room temperature molecular memory observed from a nanowell device (2005) (24)
Recent developments in silicon molecular beam epitaxy (1983) (23)
Low threshold, optically pumped, room‐temperature laser oscillation at 0.88 μm from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Ge‐coated Si substrates (1986) (23)
Ge0.2Si0.8/Si Bragg‐reflector mirrors for optoelectronic device applications (1993) (22)
Ion beam induced epitaxial crystallization of GexSi1−x/Si structures (1989) (22)
Vectorially oriented membrane protein monolayers: profile structures via x-ray interferometry/holography. (1994) (21)
MEASUREMENT OF THE BANDGAP OF GexSi1−x/Si STRAINED-LAYER HETEROSTRUCTURES (1985) (21)
Precision placement of heteroepitaxial semiconductor quantum dots (2003) (20)
High-reflectivity Bragg mirrors for optoelectronic applications (1995) (20)
Observation of gas absorption in evaporated amorphous silicon films using secondary ion mass spectrometry (1981) (20)
Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy (1988) (19)
Nonequilibrium incorporation of impurities during rapid solidification (1980) (18)
Tetragonal and monoclinic forms of GexSi1−x epitaxial layers (1989) (18)
Design and fabrication of asymmetric strained layer mirrors for optoelectronic applications (1993) (17)
The electrical behavior of nitro oligo(phenylene ethynylene)’s in pure and mixed monolayers (2006) (16)
Patterned silicon molecular beam epitaxy with submicron lateral resolution (1982) (16)
Evidence for a real‐space transfer of hot holes in strained GeSi/Si heterostructures (1990) (16)
Effects of molecular environments on the electrical switching with memory of nitro-containing OPEs (2006) (15)
Trapping of oxygen at homoepitaxial Si‐Si interfaces (1986) (15)
EFFECT OF HYDROSTATIC PRESSURE ON THE RAMAN SPECTRUM OF GENSIM MULTIPLE QUANTUM WELLS WITH N 4 AND M7 (1998) (15)
A DLTS study of the gap states of amorphous Si1−xHx alloys (1980) (14)
Dopant passivation and work function tuning through attachment of heterogeneous organic monolayers on silicon in ultrahigh vacuum (2011) (13)
Observation of electron and hole traps in hydrogenated amorphous silicon by voltage- and laser-excited deep level transient spectroscopy (1980) (13)
Ge-Si/Si infra-red, zone-folded superlattice detectors (1988) (13)
Enhanced Diffusion in Boron Implanted Silicon (1985) (13)
From porous Si to patterned Si substrate: Can misfit strain energy in a continuous heteroepitaxial film be reduced? (1990) (12)
In situ reflectance monitoring of InP/InGaAsP films grown by metalorganic vapor phase epitaxy (1996) (12)
Asymmetric dual GeSi/Si Bragg mirror and photodetector operating at 632 and 780 nm (1994) (11)
High-reflectivity GeSi/Si asymmetric Bragg reflector at 0.8 mu m (1994) (11)
Propagation of Dislocations Through GeSi/Si Strained Layers and Superlattices (1988) (11)
Silicon molecular beam epitaxy: Highlights of recent work (1990) (11)
Profile and in-plane structures of self-assembled monolayers on germanium/silicon multilayer substrates by high-resolution x-ray diffraction employing x-ray interferometry/holography (1993) (10)
Tribochemical Reactions of Silicon: An In Situ Infrared Spectroscopy Characterization (1998) (10)
Growth of GexSi1−X/Si Alloys on Si (100), (110) and (111) Surfaces (1991) (9)
Summary Abstract: Observation and properties of the Ge(111)‐7×7 surface from Si(111)/Ge structures (1985) (9)
Dependence of misfit dislocation velocities upon growth technique and oxygen content in strained GexSi1-x/Si(100) heterostructures (1991) (9)
Fabrication and Characterization of Interconnected Nanowell Molecular Electronic Devices in Crossbar Architecture (2009) (9)
Technological Prospects for Germanium Silicide Epitaxy (1988) (9)
Chapter 8 – Epitaxy of Deposited Si (1982) (9)
Heteroepitaxy of GexSi1−x on porous Si substrates (1990) (9)
Silicon molecular beam epitaxy as a VLSI processing technique (1981) (9)
LIQUID AND SOLID PHASE REGROWTH OF Si BY LASER IRRADIATION AND THERMALLY ASSISTED FLASH ANNEALING. (1980) (8)
Photoemission measurement of equilibrium segregation at GeSi surfaces (1994) (8)
INFRARED ABSORPTION OF GE EPITAXIAL FILMS ON A GAAS SUBSTRATE (1996) (8)
Vectorially-oriented monolayers of cytochrome oxidase : Fabrication and profile structures (1997) (8)
Optical properties of strained GeSi superlattices grown on (001)Ge (1989) (8)
The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed (2006) (8)
Molecular Beam Epitaxy of Ge x Si 1-x /(Si, Ge) Strained-Layer Heterostructures and Superlattices (1984) (8)
In situ transmission electron microscopy measurements of the electrical and structural properties of strained layer GeSi/Si p–n junctions (1992) (8)
Profile Structures of Macromolecular Monolayers on Solid Substrates By X-Ray Interferometry/Holography (1991) (7)
A Raman scattering study of GexSi1−x/Si strained‐layer superlattices (1985) (7)
The formation and decomposition of water and hydrogen on Gex Si1−x(100)2 × 1 (1986) (7)
Creation of web-based interactive virtual experiments on microelectronics for early engineering students (2002) (7)
Theory of reflectivity of an asymmetric mirror. (1996) (7)
Vectorially oriented monolayers of detergent-solubilized Ca(2+) -ATPase from sarcoplasmic reticulum. (1996) (7)
X-ray interferometry/holography for the unambiguous determination of the profile structures of single Langmuir-Blodgett monolayers (1993) (7)
In Situ Observations of Misfit Dislocations in Lattice-Mismatched Epitaxial Semiconductor Heterostructures (1994) (7)
Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography (2006) (7)
Systematic studies of SiGe∕Si islands nucleated via separate in situ or ex situ Ga+ focused ion beam-guided growth techniques (2006) (6)
Vectorially oriented monolayers of the cytochrome c/cytochrome oxidase bimolecular complex. (1998) (6)
CHAPTER 4 - Growth of Doped Silicon Layers by Molecular Beam Epitaxy (1981) (6)
Kinetic Barriers to Strain Relaxation in Ge x Si 1-x /Si Epitaxy (1989) (6)
Vapor phase deposition of oligo"phenylene ethynylene… molecules for use in molecular electronic devices (2007) (6)
Room temperature electroabsorption in a Ge/sub x/Si/sub 1-x/ PIN photodiode (1994) (6)
Summary Abstract: Evidence for a piezoelectric effect in coherently strained Ge0.2Si0.8 alloys on Si (001) (1987) (6)
PDF) Engines Of Creation The Coming Era Nanotechnology K Eric Drexler (PDF) The Fences Between Us Diary Of Piper Davis Seattle Washington 1941 Dear America (2016) (5)
The Roles of Stress, Geometry and Orientation on Misfit Dislocations Kinetics and Energetics in Epitaxial Strained Layers. (1991) (5)
Analysis of the Three-Dimensional Nanoscale Relationship of Ge Quantum Dots in a Si Matrix Using Focused Ion Beam Tomography. (2004) (5)
Localised strain characterisation in semiconductor structures using electron diffraction contrast imaging (1995) (5)
Tetragonal Strain in MBE Ge x Si 1-x Films Grown on (100) Si Observed by Ion Channeling and X-Ray Diffraction (1983) (5)
STRUCTURAL STUDY OF THE ANNEALING OF ALKYLSILOXANE SELF-ASSEMBLED MONOLAYERS ON SILICON BY HIGH-RESOLUTION X-RAY DIFFRACTION (1995) (5)
Materials genomics of thin film strain relaxation by misfit dislocations (2015) (5)
Ge x Si 1−x /Si Heterostructures: Physics and Device Applications (1987) (5)
The Creation of Web-Based Interactive Virtual Experiments on Microelectronics and Nanoscience for Early Engineering Students (2002) (5)
1.3µm Operation of GexSi1-x/Si strained-layer superlattice avalanche photodetectors (1985) (5)
Conditions for self-assembly of quantum fortresses and analysis of their possible use as quantum cellular automata (2005) (5)
Comment on “Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy” [Appl. Phys. Lett. 71, 3543 (1997)] (1999) (4)
New photoluminescence defect at 1.0192 eV in silicon molecular beam epitaxy layers ascribed to Cu (1987) (4)
Raman spectroscopic analysis of the CaF2Si heterostructure interface (1984) (4)
Misfit dislocations in strained layer epitaxy: I. Energetics (1992) (4)
Chapter 1 Principles and Concepts of Strained-Layer Epitaxy (1990) (4)
Piezoreflectance of strained Si/Ge superlattices grown on Ge(001) (1992) (4)
Epitaxial Si-Ge etch stop layers with ethylene diamine pyrocatechol for bonded and etchback silicon-on-lnsulator (1994) (4)
Addition reaction and characterization of chlorotris(triphenylphosphine)iridium(I) on silicon(1 1 1) surfaces (2009) (4)
Recent Advances in Picosecond Optoelectronics (1980) (4)
Stress-Driven Morphological Changes of SiGe Films and SiGe/Si Multilayers Grown on Vicinal Si(001) Substrates (1997) (4)
Experimental and Theoretical Analysis of Strain Relaxation in Ge x Si 1-x /Si(100) Heteroepitaxy (1989) (4)
Dynamic observations of relaxation processes in semiconductor heterostructures (1991) (4)
Microstructural Evolution and Stress Relaxation in Sputtered Tungsten Films (1993) (3)
Current gain enhancement in bipolar transistors by low‐energy ion beam modification of the polycrystalline silicon emitter (1991) (3)
Chapter 1 - Growth Techniques and Procedures (1998) (3)
Characterization of Different Length Scales and Periodicities inGe/Si Microstructures by Raman Spectroscopy: Theory and Experiment (1996) (3)
Interface Morphology of Gen / Si Quantum Wells Studied with Raman Spectroscopy and High Resolution X-Ray Diffraction (1997) (3)
Automatic process control for artificially layered structures (1987) (3)
Picosecond Photoconductivity in Amorphous Silicon (1980) (3)
Misfit Dislocations in Strained Layer Epitaxy (1993) (3)
Solid Phase Epitaxy of Ge x Si 1-x Alloys on [100] Si (1989) (2)
Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system (2004) (2)
Changes in Electronic Device Properties During the Formation of Dislocations (1992) (2)
In-Situ TEM Studies of the Interaction Between Dislocations in SiGe Heterostructures (1999) (2)
Space-charge behavior of “Thin-MOS” diodes with MBE-grown silicon films (1984) (2)
Extended-spectral-range Fourier transform infrared-attenuated total reflection spectroscopy on Si surfaces using a novel Si coated Ge attenuated total reflection prism (1997) (2)
Strain Relaxation Mechanisms in Lattice Mismatched Epitaxy (1990) (2)
Summary Abstract: Silicon MBE (1981) (2)
SiGe/Si resonant cavity photodetector (1994) (2)
Compositional modulations in GexSi1−x heteroepitaxial layers (1989) (2)
Structural changes caused by H2 adsorption on the Si(111)7 × 7 surface (1990) (2)
Misfit dislocations in strained layer epitaxy: II. Kinetics (1992) (2)
Heteronucleation onto Si Surfaces (1987) (2)
Quantum mechanical modeling of the charge distribution Si/Si/sub 1-x/Ge/sub x/Si p-channel MOSFET (1994) (2)
On the cross-over between 2-dimensional and 3-dimensional growth in Si/Gen/Si quantum wells (1998) (2)
Electronic excitations on GexSi1−x(100)(2×1) (1986) (2)
Study of MBE growth of GexSi1−x on {111} vicinal surfaces of Si substrates (1985) (2)
Enhancement of Lateral Solid Phase Epitaxial Growth of Si on SiO2 with 31P Implantation (1987) (1)
Optical Properties of Ordered Ge-Si Atomic-Layer Superlattices (1987) (1)
Interfacial Structure and Stability in Ge x Si 1−x /Si Strained Layers. (1984) (1)
Changes in electrical device characteristics during the formation of dislocations in situ in the TEM (1993) (1)
Reading Rhetorically, 4th Edition (2014) (1)
Summary Abstract: Bridging the gap between solid–solid and solid–vacuum interfaces: A study of buried Si/αSi interfaces (1987) (1)
Systematic studies of SiGe/Si islands nucleated via separate in situ, or ex situ, Ga+ focused ion beam-guided growth techniques (2003) (1)
"We're Not in Kansas Anymore" - A Hands-on Introduction to the New World of Nanoscience and Technology (2005) (1)
Dislocation Nucleation in GeSi/Si(100) Strained Epilayers (1988) (1)
Low temperature photoluminescence in ultra-thin germanium quantum wells (1999) (1)
Induced crystallization as a nonlithographic pattern transfer technique for nanofabrication (2001) (1)
Order-Disorder Transitions In Strained Semiconductor Systems (1986) (1)
Strain Relief Mechanisms in The Growth of Ge x Si 1−x /Si(110) Heterostructures (1992) (1)
Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, U.S.A. (1991) (1)
Techniques for the Growth of Crystalline Films by Molecular Beam Deposition (1993) (1)
Ion Implantation of as in CdTe: Electrical Characteristics and Radiation Damage (1975) (1)
Resonant-cavity photodetectors: performance and functionality (1997) (1)
Hydrogenation of molecular beam epitaxial Ge0.36Si0.64 on Si (1989) (1)
Pseudomorphic p-GexSi1-x/Si quantum-well infrared photodetectors for normal incidence operation between 20K and 77K (1992) (1)
Quantum-dot Cellular Automata (QCA) - Logic Gates (2006) (1)
E1-like optical transitions in ge/si heterostructures studied by electroreflectance and photoreflectance (1994) (0)
Simple equipment tolerant reflectometry for monitoring of molecular beam epitaxy and metalorganic chemical vapor deposition growth (1996) (0)
Apparatus and method of deposition by molecular jet on more substrates (1982) (0)
1.3μm Avalanche Photodiodes Formed by Waveguiding in GexSi1-x, Strained Layer Superlattice (1986) (0)
The Formation and Decomposition of Water and Hydrogen on Gex Si1-x (100)2x1 (1986) (0)
Silicon-Based Semiconductor Heterostructures (2018) (0)
Fabrication of a MOSFET within a Microprocessor (2005) (0)
Heavy Phosphorus Implantation of Ge 0.83 Si 0.17 Epitaxial Layers (1985) (0)
Quantum-dot Cellular Automata (QCA) - Memory Cells (2006) (0)
Semiconductor device comprising epitaxial much-layer mirror (1993) (0)
TP-A7 silicon-nickel silicide heterostructures grown by molecular-beam epitaxy (1980) (0)
Resonant-cavity photodetectors for optical communications (1995) (0)
Surface Studies of Silicon with a High Resolution Transmission Electron Microscope (1985) (0)
Surface science lettersObservation of a (5 × 5) leed pattern from GexSi1−x(111) alloys (1984) (0)
Hybrid Mole Computer Using Vapor Phase Assembly (2006) (0)
Picosecond time‐resolved photoconductivity in amorphous silicon (2008) (0)
Quantitative Experimental Determination of The Effect of Dislocation - Dislocation Interactions on Strain Relaxation in Lattice Mismatched Heterostructures (1998) (0)
VB-5 GexSi1-x/Si waveguide photodetectors for 1.3-µm single-mode optical-fiber communications (1986) (0)
Trapping of Oxygen at Homoepitaxial Si-Si Interfaces Grown by Molecular Beam Epitaxy (1985) (0)
Scanning Probe Microscope Operation (2005) (0)
On interfaces and the phonon and electron confinement in Ge/Si multiple quantum wells (1996) (0)
Use of reflectance spectroscopy for in-situ monitoring of InP/InGaAsP films grown by MOVPE (1996) (0)
Electronic Excitations on Semiconductor (100) Surfaces (1985) (0)
Component comprising semiconductor (1992) (0)
Shape Resonances in OH Groups Chemisorbed on the (100)Surface of Ge-Si Alloys (1985) (0)
How Semiconductors and Transistors Work (2005) (0)
In-Situ Electron Microscope Studies of Misfit Dislocation Introduction into GexSi1-x/Si Heterostructures (1989) (0)
Stress Relaxation in Sputtered W Films and W/GeSi/Si Heterostructures (1993) (0)
A systematic study of novel self-assembled surface structures in SiGe/Si (2003) (0)
LATTICE RELAXATION IN THIN COMPOSITIONALLY-MODULATED SEMICONDUCTOR FILMS. (1985) (0)
On the Challenges and Opportunities of Sensing Materials Growth Within Production Deposition Tools (2000) (0)
Laser induced epitaxy of amorphous deposited silicon (2008) (0)
SILICON MOLECULAR BEAM EPITAXY : A COMPREHENSIVE BIBLIOGRAPHY 1962-82 (1982) (0)
Molecular Beam Epitaxy of Silicon Materials: A Bibliography 1962—1985 (2018) (0)
STRAIN RELAXATION PHENOMENA IN Ge x Si 1 − x /Si STRAINED STRUCTURES (1989) (0)
Electronic excitations on Ge x Si 1 - x (100)(2 × 1) (1986) (0)
Evidence for interface terraces in Ge/Si quantum wells obtained by Raman scattering (1996) (0)
Making an integrated circuit (IC) (2016) (0)
The application of silicon molecular beam epitaxy to VLSI (2008) (0)
Development of Induced Crystallization as a Pattern Transfer Mechanism for Nanofabrication (2000) (0)
Room Temperature Elec troabsorption in a Ge,Sil - PIN Photodiode (1994) (0)
Heteroepitaxial strains and interface structure of Ge–Si alloy layers on Si (100) (2020) (0)
Dual Symmetric And Asymmetric Mirrors (1994) (0)
Transmission Electron Microscopy of Strained-Layer Superlattices (1984) (0)
Subject, including a mismatched in lattice layers semiconductor heterostructure (1992) (0)
Formation Of Stacking Fault Tetrahedra During Epitaxial Growth of Silicon and Germanium-Silicon Layers on {111} Silicon Substrates (1985) (0)
Scanning Probe Microscope Piezoelectric Crystals (2005) (0)
X-Ray Diffraction Studies of Annealed SiGe/Si SLS (1988) (0)
Electrical Properties of Si/SiGe Structures Grown by Low Temperature Epitaxy (1989) (0)
substrates apparatus and method for molecular beam precipitation on a variety (1982) (0)
Industrial Application: Possible Approaches (2018) (0)
Annealing of amorphous silicon with CW infrared lasers (1979) (0)
Ion implantation in cadmium telluride (1976) (0)

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What Schools Are Affiliated With John Condon Bean?

John Condon Bean is affiliated with the following schools:

Stevens Institute of Technology
University of Virginia