John D. Cressler
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American academic
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Engineering
John D. Cressler's Degrees
- PhD Electrical Engineering Stanford University
- Masters Electrical Engineering Stanford University
Why Is John D. Cressler Influential?
(Suggest an Edit or Addition)According to Wikipedia, John D. Cressler is an American academic and author, currently the Regents Professor and holder of the Schlumberger Chair in Electronics at Georgia Tech. Early life and education John D. Cressler was born in 1961 and grew up in Georgia. He received his B.S. in physics from Georgia Tech in 1984, and his Ph.D. in applied physics from Columbia University in 1990. From 1984 to 1992, he was on the research staff at the IBM Thomas J. Watson Research Center, and from 1992 to 2002 he served on faculty at Auburn University. In 2002, he joined the faculty at Georgia Tech, and is currently Schlumberger Chair Professor of Electronics, in the School of Electrical and Computer Engineering.
John D. Cressler's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- SiGe HBT technology: a new contender for Si-based RF and microwave circuit applications (1998) (463)
- Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits (1995) (362)
- On the Potential of SiGe HBTs for Extreme Environment Electronics (2005) (225)
- Si/SiGe epitaxial-base transistors. II. Process integration and analog applications (1995) (208)
- Record maximum oscillation frequency in C-face epitaxial graphene transistors. (2013) (158)
- Silicon Heterostructure Handbook : Materials, Fabrication, Devices, Circuits and Applications of SiGe and Si Strained-Layer Epitaxy (2005) (150)
- Reconfigurable RFICs in Si-based technologies for a compact intelligent RF front-end (2005) (148)
- Extreme Environment Electronics (2012) (145)
- Radiation Effects in SiGe Technology (2013) (117)
- Half-terahertz operation of SiGe HBTs (2006) (115)
- Multiple-Bit Upset in 130 nm CMOS Technology (2006) (108)
- On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. I. Transistor DC design considerations (1993) (107)
- Design and fabrication of planar guard ring termination for high-voltage SiC diodes (2000) (102)
- Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST) (2005) (95)
- A unified approach to RF and microwave noise parameter modeling in bipolar transistors (2001) (91)
- A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology (1999) (88)
- RF linearity characteristics of SiGe HBTs (2001) (83)
- Low-frequency noise in UHV/CVD epitaxial Si and SiGe bipolar transistors (1996) (78)
- A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs (2003) (78)
- Sources of Phase Error and Design Considerations for Silicon-Based Monolithic High-Pass/Low-Pass Microwave Phase Shifters (2006) (76)
- Optimization of SiGe HBTs for operation at high current densities (1999) (74)
- Ionizing radiation tolerance of high-performance SiGe HBT's grown by UHV/CVD (1995) (74)
- Optimization of SiGe HBT technology for high speed analog and mixed-signal applications (1993) (73)
- An investigation of the origins of the variable proton tolerance in multiple SiGe HBT BiCMOS technology generations (2002) (72)
- On the Analysis and Design of Low-Loss Single-Pole Double-Throw W-Band Switches Utilizing Saturated SiGe HBTs (2014) (71)
- On the low-temperature static and dynamic properties of high-performance silicon bipolar transistors (1989) (69)
- Silicon-Germanium as an Enabling Technology for Extreme Environment Electronics (2010) (69)
- The analysis of UWB SiGe HBT LNA for its noise, linearity, and minimum group delay variation (2006) (68)
- A Silicon-Germanium Receiver for X-Band Transmit/Receive Radar Modules (2008) (67)
- Heavy-ion broad-beam and microprobe studies of single-event upsets in 0.20-/spl mu/m SiGe heterojunction bipolar transistors and circuits (2003) (66)
- Emerging SiGe HBT reliability issues for mixed-signal circuit applications (2004) (65)
- Analysis and design of an ultra-wideband low-noise amplifier using resistive feedback in SiGe HBT technology (2006) (64)
- An X-band SiGe LNA with 1.36 dB mean noise figure for monolithic phased array transmit/receive radar modules (2006) (64)
- A high performance epitaxial SiGe-base ECL BiCMOS technology (1992) (63)
- A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors (2002) (60)
- 73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters (1992) (60)
- On the profile design and optimization of epitaxial Si- and SiGe-base bipolar technology for 77 K applications. II. Circuit performance issues (1993) (59)
- Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBT's (1997) (59)
- Design of single and multiple zone junction termination extension structures for SiC power devices (2001) (59)
- Neutron radiation tolerance of advanced UHV/CVD SiGe HBT BiCMOS technology (1997) (58)
- On the Performance Limits of Cryogenically Operated SiGe HBTs and Its Relation to Scaling for Terahertz Speeds (2009) (54)
- Hot electron and hot hole degradation of UHV/CVD SiGe HBT's (2000) (54)
- A 5 GHz 0.95 dB NF Highly Linear Cascode Floating-Body LNA in 180 nm SOI CMOS Technology (2012) (54)
- Simulation of SEE-induced charge collection in UHV/CVD SiGe HBTs (2000) (53)
- An investigation of the spatial location of proton-induced traps in SiGe HBTs (1998) (53)
- Cryogenic operation of third-generation, 200-GHz peak-f/sub T/, silicon-germanium heterojunction bipolar transistors (2005) (52)
- SiGe HBT technology: device and application issues (1995) (52)
- Application of RHBD Techniques to SEU Hardening of Third-Generation SiGe HBT Logic Circuits (2006) (51)
- An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs (2006) (51)
- Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's (1999) (51)
- Neutral base recombination and its influence on the temperature dependence of Early voltage and current gain-Early voltage product in UHV/CVD SiGe heterojunction bipolar transistors (1997) (50)
- A 0.8 THz $f_{\rm MAX}$ SiGe HBT Operating at 4.3 K (2014) (50)
- The revolution in SiGe: Impact on device electronics (2004) (49)
- Transistor noise in SiGe HBT RF technology (2000) (48)
- An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs (2007) (47)
- Substrate Engineering Concepts to Mitigate Charge Collection in Deep Trench Isolation Technologies (2006) (47)
- An SEU hardening approach for high-speed SiGe HBT digital logic (2003) (47)
- Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 /spl mu/m SiGe BiCMOS technology (1999) (47)
- Reliability of SiGe HBTs for Power Amplifiers—Part I: Large-Signal RF Performance and Operating Limits (2009) (47)
- Low-frequency noise characteristics of UHV/CVD epitaxial Si- and SiGe-base bipolar transistors (1996) (46)
- A D-Band Micromachined End-Fire Antenna in 130-nm SiGe BiCMOS Technology (2015) (46)
- Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology (1990) (46)
- Investigation of single-event transients in voltage-controlled oscillators (2003) (45)
- A comparison of gamma and proton radiation effects in 200 GHz SiGe HBTs (2005) (45)
- Proton tolerance of fourth-generation 350 GHz UHV/CVD SiGe HBTs (2004) (45)
- A Comparison of the Degradation in RF Performance Due to Device Interconnects in Advanced SiGe HBT and CMOS Technologies (2015) (44)
- Sub-1-K Operation of SiGe Transistors and Circuits (2009) (44)
- Re-engineering silicon: Si-Ge heterojunction bipolar technology (1995) (44)
- A 94 GHz, 1.4 dB Insertion Loss Single-Pole Double-Throw Switch Using Reverse-Saturated SiGe HBTs (2014) (44)
- A 2 mW, Sub-2 dB Noise Figure, SiGe Low-Noise Amplifier For X-band High-Altitude or Space-based Radar Applications (2007) (44)
- Operation of SiGe heterojunction bipolar transistors in the liquid-helium temperature regime (1995) (43)
- Proton radiation effects in 4H-SiC diodes and MOS capacitors (2004) (42)
- Anomalous dose rate effects in gamma irradiated SiGe heterojunction bipolar transistors (1999) (41)
- Noise parameter optimization of UHV/CVD SiGe HBT's for RF and microwave applications (1999) (41)
- 3-D simulation of heavy-ion induced charge collection in SiGe HBTs (2003) (40)
- An 8-bit, 12 GSample/sec SiGe track-and-hold amplifier (2005) (40)
- A 3-10 GHz SiGe resistive feedback low noise amplifier for UWB applications (2005) (39)
- The effects of proton irradiation on the RF performance of SiGe HBTs (1999) (39)
- Modeling of single-event effects in circuit-hardened high-speed SiGe HBT logic (2001) (39)
- A New Self-Healing Methodology for RF Amplifier Circuits Based on Oscillation Principles (2009) (39)
- A comparison of SEU tolerance in high-speed SiGe HBT digital logic designed with multiple circuit architectures (2002) (39)
- Proton radiation response of SiGe HBT analog and RF circuits and passives (2001) (39)
- Predictive Physics-Based TCAD Modeling of the Mixed-Mode Degradation Mechanism in SiGe HBTs (2012) (39)
- The Effects of Irradiation Temperature on the Proton Response of SiGe HBTs (2006) (38)
- 50-GHz self-aligned silicon bipolar transistors with ion-implanted base profiles (1990) (38)
- Laser-Induced Current Transients in Silicon-Germanium HBTs (2008) (38)
- 5 bit, silicon-based, X-band phase shifter using a hybrid pi/t high-pass/low-pass topology (2008) (38)
- A low-power ka-band Voltage-controlled oscillator implemented in 200-GHz SiGe HBT technology (2005) (37)
- A submicrometer high-performance bipolar technology (1989) (37)
- Noise modeling and SiGe profile design tradeoffs for RF applications [HBTs] (2000) (37)
- A Low-Loss and High Isolation D-Band SPDT Switch Utilizing Deep-Saturated SiGe HBTs (2014) (37)
- A Lightweight Organic X-Band Active Receiving Phased Array With Integrated SiGe Amplifiers and Phase Shifters (2011) (36)
- A SiGe D-Band Low-Noise Amplifier Utilizing Gain-Boosting Technique (2015) (35)
- SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers (2008) (35)
- A Low-Power,$X$-Band SiGe HBT Low-Noise Amplifier for Near-Space Radar Applications (2006) (35)
- Current gain rolloff in graded-base SiGe heterojunction bipolar transistors (1993) (35)
- Heavy Ion Microbeam- and Broadbeam-Induced Transients in SiGe HBTs (2009) (35)
- Reliability of SiGe HBTs for Power Amplifiers—Part II: Underlying Physics and Damage Modeling (2009) (35)
- The effects of high-dose gamma irradiation on high-voltage 4H-SiC Schottky diodes and the SiC-SiO/sub 2/ interface (2001) (35)
- An 8–16 GHz SiGe Low Noise Amplifier With Performance Tuning Capability for Mitigation of Radiation-Induced Performance Loss (2012) (34)
- CMOS reliability issues for emerging cryogenic Lunar electronics applications (2006) (34)
- Temperature-Dependence of Off-State Drain Leakage in X-Ray Irradiated 130 nm CMOS Devices (2006) (33)
- 1/f noise in proton-irradiated SiGe HBTs (2001) (33)
- A High Performance 0.25/spl mu/m CMOS (1993) (33)
- A 5-bit, 18 GS/sec SiGe HBT track-and-hold amplifier (2005) (32)
- A Ka-Band Electronically Tunable Ferroelectric Filter (2009) (32)
- A 1.8-3.1 dB noise figure (3-10 GHz) SiGe HBT LNA for UWB applications (2006) (32)
- Large-Signal Reliability Analysis of SiGe HBT Cascode Driver Amplifiers (2015) (32)
- A High-Gain, Two-Stage, X-Band SiGe Power Amplifier (2007) (32)
- A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies (2000) (32)
- Design and Analysis of a Low Loss, Wideband Digital Step Attenuator With Minimized Amplitude and Phase Variations (2018) (32)
- A very low power SiGe LNA for UWB application (2005) (31)
- A high-power, low-loss W-band SPDT switch using SiGe PIN diodes (2014) (31)
- A novel self-healing methodology for RF Amplifier circuits based on oscillation principles (2012) (31)
- Base-profile optimization for minimum noise figure in advanced UHV/CVD SiGe HBT's (1998) (31)
- Proton tolerance of third-generation, 0.12 /spl mu/m 185 GHz SiGe HBTs (2003) (31)
- Evaluation of the radiation tolerance of several generations of SiGe heterojunction bipolar transistors under radiation exposure (2007) (31)
- Ionizing radiation tolerance and low-frequency noise degradation in UHV/CVD SiGe HBT's (1995) (31)
- A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations (2007) (31)
- An 850 mW X-Band SiGe power amplifier (2008) (31)
- SiGe BiCMOS Technology: An IC Design Platform for Extreme Environment Electronics Applications (2007) (31)
- A High-Slew Rate SiGe BiCMOS Operational Amplifier for Operation Down to Deep Cryogenic Temperatures (2006) (30)
- Impact of geometrical scaling on low-frequency noise in SiGe HBTs (2003) (30)
- Silicon germanium heterojunction bipolar technology: the next leap in silicon? (1994) (30)
- Single Event Transient Response of SiGe Voltage References and Its Impact on the Performance of Analog and Mixed-Signal Circuits (2009) (30)
- The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors (2002) (30)
- A 40 GS/s SiGe track-and-hold amplifier (2008) (30)
- Quantifying neutral base recombination and the effects of collector-base junction traps in UHV/CVD SiGe HBTs (1998) (30)
- Sub-30-ps ECL circuit operation at liquid-nitrogen temperature using self-aligned epitaxial SiGe-base bipolar transistors (1991) (29)
- The influence of Ge grading on the bias and temperature characteristics of SiGe HBTs for precision analog circuits (2000) (29)
- Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs (2014) (29)
- Impact of proton irradiation on the static and dynamic characteristics of high-voltage 4H-SiC JBS switching diodes (2003) (29)
- Geometry and bias current optimization for SiGe HBT cascode low-noise amplifiers (2002) (29)
- A high-speed complementary silicon bipolar technology with 12-fJ power-delay product (1993) (29)
- Damage mechanisms in impact-ionization-induced mixed-mode reliability degradation of SiGe HBTs (2005) (29)
- On the high-temperature (to 300/spl deg/C) characteristics of SiGe HBTs (2004) (29)
- A 200 mm SiGe-HBT technology for wireless and mixed-signal applications (1994) (29)
- Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology (2012) (28)
- An epitaxial emitter-cap SiGe-base bipolar technology optimized for liquid-nitrogen temperature operation (1994) (28)
- Proton and gamma radiation effects in a new first-generation SiGe HBT technology (2006) (28)
- Single Event Upset Mechanisms for Low-Energy-Deposition Events in SiGe HBTs (2008) (27)
- Noise-gain tradeoff in RF SiGe HBTs (2001) (27)
- On the Frequency Limits of SiGe HBTs for TeraHertz Applications (2007) (27)
- Proton Tolerance of SiGe Precision Voltage References for Extreme Temperature Range Electronics (2006) (27)
- High-low polysilicon-emitter SiGe-base bipolar transistors (1993) (27)
- Comparison of Shunt and Series/Shunt nMOS Single-Pole Double-Throw Switches for X-Band Phased Array T/R Modules (2007) (27)
- The effects of operating bias conditions on the proton tolerance of SiGe HBTs (2003) (27)
- A Class-E Tuned W-Band SiGe Power Amplifier With 40.4% Power-Added Efficiency at 93 GHz (2015) (26)
- A Brief History of the Field (2017) (26)
- Correlation of low-frequency noise and emitter-base reverse-bias stress in epitaxial Si- and SiGe-base bipolar transistors (1995) (26)
- Design of Digital Circuits Using Inverse-Mode Cascode SiGe HBTs for Single Event Upset Mitigation (2010) (26)
- A 28-GHz SiGe up-conversion mixer using a series-connected triplet for higher dynamic range and improved IF port return loss (2006) (26)
- The effects of radiation on 1/f noise in complementary (npn+pnp) SiGe HBTs (2004) (26)
- Direct current characterization of depletion-mode 6HSiC MOSFETs from 294 to 723 K (1996) (26)
- A 6–20 GHz Adaptive SiGe Image Reject Mixer for a Self-Healing Receiver (2012) (26)
- The Application of RHBD to n-MOSFETs Intended for Use in Cryogenic-Temperature Radiation Environments (2007) (25)
- SiGe BiCMOS Precision Voltage References for Extreme Temperature Range Electronics (2006) (25)
- Compact Modeling of Mutual Thermal Coupling for the Optimal Design of SiGe HBT Power Amplifiers (2009) (25)
- Design and On-Wafer Characterization of $G$ -Band SiGe HBT Low-Noise Amplifiers (2016) (25)
- Single-Event Response of the SiGe HBT Operating in Inverse-Mode (2012) (25)
- A Novel Device Architecture for SEU Mitigation: The Inverse-Mode Cascode SiGe HBT (2009) (25)
- A True Time Delay-based SiGe Bi-directional T/R Chipset for Large-Scale Wideband Timed Array Antennas (2018) (24)
- An inductorless Ka-band SiGe HBT ring oscillator (2005) (24)
- Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit From 16–300 K (2010) (24)
- A new approach to designing electronic systems for operation in extreme environments: Part II - The SiGe remote electronics unit (2012) (23)
- The Effects of Scaling and Bias Configuration on Operating-Voltage Constraints in SiGe HBTs for Mixed-Signal Circuits (2007) (23)
- SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices (2007) (23)
- A retrospective on the SiGe HBT: What we do know, what we don't know, and what we would like to know better (2013) (23)
- Evaluation of the Radiation Tolerance of SiGe Heterojunction Bipolar Transistors Under 24-GeV Proton Exposure (2006) (23)
- 3-D Simulation of SEU Hardening of SiGe HBTs Using Shared Dummy Collector (2007) (23)
- Theoretical Analysis of a Low Dispersion SiGe LNA for Ultra-Wideband Applications (2006) (23)
- Novel in-situ doped polysilicon emitter process with buried diffusion source (BDS) (1991) (23)
- Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs (2017) (22)
- An X-band to Ka-band SPDT switch using 200 nm SiGe HBTs (2012) (22)
- Low phase noise and high output power 367 GHz and 154 GHz signal sources in 130 nm SiGe HBT technology (2014) (22)
- Proton tolerance of advanced SiGe HBTs fabricated on different substrate materials (2004) (22)
- A D-band (110 to 170 GHz) SPDT switch in 32 nm CMOS SOI (2015) (22)
- Evidence for Non-Equilibrium Base Transport in Si and SiGe Bipolar Transistors at Cryogenic Temperatures (1996) (22)
- Proton radiation effects in 0.35 /spl mu/m partially depleted SOI MOSFETs fabricated on UNIBOND (2002) (22)
- Reconciling 3-D Mixed-Mode Simulations and Measured Single-Event Transients in SiGe HBTs (2010) (22)
- A 12-Bit Cryogenic and Radiation-Tolerant Digital-to-Analog Converter for Aerospace Extreme Environment Applications (2008) (21)
- A low-power, 10GS/s track-and-hold amplifier in SiGe BiCMOS technology (2005) (21)
- A highly-efficient 138–170 GHz SiGe HBT frequency doubler for power-constrained applications (2016) (21)
- Electrical probing of surface and bulk traps in proton-irradiated gate-assisted lateral PNP transistors (1998) (21)
- The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI (2009) (21)
- A 27 GHz 20 ps PNP technology (1989) (21)
- Low-loss, wideband SPDT switches and switched-line phase shifter in 180-nm RF CMOS on SOI technology (2014) (21)
- Impact of Scaling on the Inverse-Mode Operation of SiGe HBTs (2007) (21)
- Active-inductor-based low-power broadband harmonic VCO in SiGe technology for wideband and multi-standard applications (2005) (20)
- Characterization and profile optimization of SiGe pFETs on silicon-on-sapphire (1999) (20)
- Best practices to ensure the stability of sige HBT cascode low noise amplifiers (2012) (20)
- A High-Linearity 5-bit, X-band SiGe HBT Phase Shifter (2006) (20)
- Operation of SiGe HBTs Down to 70 mK (2017) (20)
- Simulation of a new back junction approach for reducing charge collection in 200 GHz SiGe HBTs (2005) (20)
- An Investigation of Single-Event Effects and Potential SEU Mitigation Strategies in Fourth-Generation, 90 nm SiGe BiCMOS (2013) (20)
- Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems (2014) (20)
- Sub-30ps ECL circuits using high-f/sub T/ Si and SiGe epitaxial base SEEW transistors (1990) (20)
- Proton tolerance of multiple-threshold voltage and multiple-breakdown voltage CMOS device design points in a 0.18 /spl mu/m system-on-a-chip CMOS technology (2003) (19)
- Reliability issues associated with operating voltage constraints in advanced SiGe HBTs (2005) (19)
- Application of advanced 200 GHz Si–Ge HBTs for high dose radiation environments (2010) (19)
- Evaluation of silicon-germanium (SiGe) bipolar technologies for use in an upgraded atlas detector (2009) (19)
- A New Current-Sweep Method for Assessing the Mixed-Mode Damage Spectrum of SiGe HBTs (2007) (19)
- A Theory of Single-Event Transient Response in Cross-Coupled Negative Resistance Oscillators (2010) (19)
- The Effects of Proton and X-Ray Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI (2007) (19)
- Optimizing Inverse-Mode SiGe HBTs for Immunity to Heavy-Ion-Induced Single-Event Upset (2009) (19)
- Issues and Opportunities for Complementary SiGe HBT Technology (2006) (19)
- Application of a Pelletron accelerator to study total dose radiation effects on 50 GHz SiGe HBTs (2012) (19)
- The Effects of X-Ray and Proton Irradiation on a 200 GHz/90 GHz Complementary $(npn + pnp)$ SiGe:C HBT Technology (2007) (19)
- Cryogenic performance of a 200 GHz SiGe HBT technology (2003) (19)
- A channel resistance derivative method for effective channel length extraction in LDD MOSFETs (2000) (19)
- Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution (2009) (18)
- The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs (2002) (18)
- Proton radiation response of monolithic Millimeter-wave transceiver building blocks implemented in 200 GHz SiGe technology (2004) (18)
- Trade-Offs Between RF Performance and Total-Dose Tolerance in 45-nm RF-CMOS (2011) (18)
- Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGe HBTs (2006) (18)
- Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX (2001) (18)
- MM-wave transceivers using SiGe HBT technology (2004) (18)
- Experimental Validation of an Equivalent LET Approach for Correlating Heavy-Ion and Laser-Induced Charge Deposition (2018) (18)
- A Comparison of the Effects of X-Ray and Proton Irradiation on the Performance of SiGe Precision Voltage References (2007) (18)
- Bias- and Temperature-Dependent Accumulated Stress Modeling of Mixed-Mode Damage in SiGe HBTs (2015) (18)
- On Common–Base Avalanche Instabilities in SiGe HBTs (2008) (18)
- Hole confinement and its impact on low-frequency noise in SiGe pFETs on sapphire (1997) (18)
- Evaluating the Influence of Various Body-Contacting Schemes on Single Event Transients in 45-nm SOI CMOS (2010) (18)
- Single crystal emitter gap for epitaxial Si- and SiGe-base transistors (1991) (18)
- An investigation of the damage mechanisms in impact ionization-induced "mixed-mode" reliability stressing of scaled SiGe HBTs (2003) (18)
- Injection-induced bandgap narrowing and its effects on the low-temperature operation of silicon bipolar transistors (1989) (17)
- Fully Integrated Switch-LNA Front-End IC Design in CMOS: A Systematic Approach for WLAN (2011) (17)
- A Monolithic 24 GHz, 20 dBm, 14% PAE SiGe HBT Power Amplifier (2006) (17)
- Design and Optimization of Superjunction Collectors for Use in High-Speed SiGe HBTs (2011) (17)
- The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs (2017) (17)
- Evaluation of Enhanced Low Dose Rate Sensitivity in Fourth-Generation SiGe HBTs (2014) (17)
- A two-channel, ultra-low-power, SiGe BiCMOS receiver front-end for X-band phased array radars (2009) (17)
- Proton-induced SEU in SiGe digital logic at cryogenic temperatures (2007) (17)
- Reliability studies on NPN RF power transistors under swift heavy ion irradiation (2012) (17)
- A 7-bit, 18 GHz SiGe HBT comparator for medium resolution A/D conversion (2005) (17)
- The design and optimization of high-performance, double-poly self-aligned p-n-p technology (1991) (17)
- SiGe profile design tradeoffs for RF circuit applications (1999) (17)
- Numerical simulation of SiGe HBT's at cryogenic temperatures (1994) (17)
- On the High-Temperature (to 300 C) Characteristics (2004) (17)
- A new "mixed-mode" base current degradation mechanism in bipolar transistors (2002) (16)
- SiGe HBT compact modeling for extreme temperatures (2007) (16)
- Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBTs (1996) (16)
- Accurate Modeling of Single-Event Transients in a SiGe Voltage Reference Circuit (2011) (16)
- A Review of NASA's Radiation-Hardened Electronics for Space Environments Project (2008) (16)
- Assessing reliability issues in cryogenically-operated SiGe HBTs (2005) (16)
- Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs (2009) (16)
- Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors (2007) (16)
- Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology (2014) (16)
- On the RF Properties of Weakly Saturated SiGe HBTs and Their Potential Use in Ultralow-Voltage Circuits (2011) (16)
- A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs (2002) (16)
- Use of electron-beam irradiation to study performance degradation of bipolar transistors after reverse-bias stress (1991) (16)
- The impact of substrate bias on proton damage in 130 nm CMOS technology (2005) (16)
- Enhancing the Speed of SiGe HBTs Using fT-Doubler Techniques (2008) (16)
- X-ray radiation effects in multilayer epitaxial graphene (2011) (16)
- 73ps si bipolar ECL circuits (1986) (16)
- SiGe HBT reliability issues associated with operation in extreme environments (2006) (16)
- A high gain, W-band SiGe LNA with sub-4.0 dB noise figure (2014) (16)
- A 314 GHz, fully-integrated SiGe transmitter and receiver with integrated antenna (2014) (15)
- On the Transient Response of a Complementary (npn $+$ pnp) SiGe HBT BiCMOS Technology (2014) (15)
- A 0.32-THz SiGe Imaging Array With Polarization Diversity (2018) (15)
- Partial-SOI isolation structure for reduced bipolar transistor parasitics (1992) (15)
- On the consistent modeling of band-gap narrowing for accurate device-level simulation of scaled SiGe HBTs (2003) (15)
- An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits (2014) (15)
- Intermodulation characteristics of UHV/CVD SiGe HBTs (1999) (15)
- Modeling and characterization of SiGe HBT low-frequency noise figures-of-merit for RFIC applications (2002) (15)
- Understanding Radiation- and Hot Carrier-Induced Damage Processes in SiGe HBTs Using Mixed-Mode Electrical Stress (2007) (15)
- Development of a multilayer organic packaging technique for a fully embedded T/R module (2011) (15)
- The impact of bandgap offset distribution between conduction and valence bands in Si-based graded bandgap HBT's (1999) (15)
- Analysis and design of a 3–26 GHz low-noise amplifier in SiGe HBT technology (2012) (15)
- High-performance bipolar technology for improved ECL power delay (1991) (15)
- Low-frequency noise in UHV/CVD Si- and SiGe-base bipolar transistors (1995) (15)
- The impact of gamma irradiation on SiGe HBTs operating at cryogenic temperatures (2003) (15)
- Three-dimensional Simulation of heavy-ion induced charge collection in SiGe HBTs on SOI (2004) (15)
- The effects of proton irradiation on SiGe:C HBTs (2001) (15)
- A monolithic, wide-temperature, charge amplification channel for extreme environments (2010) (15)
- Reconfigurable RFICs for frequency-agile VCOs in Si-based technology for multi-standard applications (2004) (15)
- SEU Error Signature Analysis of Gbit/s SiGe Logic Circuits Using a Pulsed Laser Microprobe (2006) (15)
- A SiGe BiCMOS instrumentation channel for extreme environment applications (2008) (15)
- The Effects of Proton Irradiation on 90 nm Strained Si CMOS on SOI Devices (2006) (15)
- Impact of Technology Scaling in sub-100 nm nMOSFETs on Total-Dose Radiation Response and Hot-Carrier Reliability (2014) (14)
- The operation of 0.35 μm partially depleted SOI CMOS technology in extreme environments (2003) (14)
- Single Event Transient Hardness of a New Complementary (npn $+$ pnp) SiGe HBT Technology on Thick-Film SOI (2010) (14)
- Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs (2005) (14)
- Miniaturized Data Acquisition System for Extreme Temperature Environments (2008) (14)
- An Investigation of Negative Differential Resistance and Novel Collector–Current Kink Effects in SiGe HBTs Operating at Cryogenic Temperatures (2007) (14)
- An investigation of low-frequency noise in complementary SiGe HBTs (2006) (14)
- A Comparison of Field and Current-Driven Hot-Carrier Reliability in NPN SiGe HBTs (2015) (14)
- A Highly Efficient X-Band Inverse Class-F SiGe HBT Cascode Power Amplifier With Harmonic-Tuned Wilkinson Power Combiner (2018) (14)
- Collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBTs (1998) (14)
- Silicon Heterostructure Devices (2007) (14)
- An investigation of proton energy effects in SiGe HBT technology (2002) (14)
- A 32 GSample/sec SiGe HBT comparator for ultra-high-speed analog-to-digital conversion (2005) (14)
- An Ultra-Thin, High-Power, and Multilayer Organic Antenna Array With T/R Functionality in the $X$-Band (2012) (14)
- A New Analytical Method for Robust Extraction of the Small-Signal Equivalent Circuit for SiGe HBTs Operating at Cryogenic Temperatures (2008) (14)
- Addressing challenges in device-circuit modeling for extreme environments of space (2007) (14)
- Applications of heavy ion microprobe for single event effects analysis (2007) (14)
- A 0.3–15 GHz SiGe LNA With >1 THz Gain-Bandwidth Product (2017) (14)
- Modeling mixed-mode DC and RF stress in SiGe HBT power amplifiers (2008) (14)
- A Physics-Based Circuit Aging Model for Mixed-Mode Degradation in SiGe HBTs (2016) (14)
- On the large-signal robustness of SiGe HBT LNAs for high-frequency wireless applications (2010) (14)
- A scaled 0.25- mu m bipolar technology using full e-beam lithography (1992) (14)
- Influence of Interface Traps on the Temperature Sensitivity of MOSFET Drain-Current Variations (2010) (14)
- Using SiGe HBT technology for extreme environment electronics (2005) (14)
- A Monolithic 5-Bit SiGe BiCMOS Receiver for X-Band Phased-Array Radar Systems (2007) (13)
- Evaluating the Effects of Single Event Transients in FET-Based Single-Pole Double-Throw RF Switches (2014) (13)
- Silicon-Germanium as an Enabling IC Technology for Extreme Environment Electronics (2008) (13)
- Impact of profile scaling on high-injection barrier effects in advanced UHV/CVD SiGe HBTs (1996) (13)
- Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs (2019) (13)
- Lifetime Studies of 130 nm nMOS Transistors Intended for Long-Duration, Cryogenic High-Energy Physics Experiments (2011) (13)
- High Performance Complementary Bipolar Technology (1993) (13)
- Potential Limitations on Integrated Silicon Photonic Waveguides Operating in a Heavy Ion Environment (2018) (13)
- Large-Signal Performance, Linearity, and Reliability Characteristics of Aggressively-Biased Cascode SiGe HBTs for Power Amplifier Applications (2007) (13)
- 3-D Mixed-Mode Simulation of Single Event Transients in SiGe HBT Emitter Followers and Resultant Hardening Guidelines (2008) (13)
- A new approach to designing electronic systems for operation in extreme environments: Part I - The SiGe Remote Sensor Interface (2012) (13)
- A 1.0 V, 10–22 GHz, 4 mW LNA Utilizing Weakly Saturated SiGe HBTs for Single-Chip, Low-Power, Remote Sensing Applications (2014) (13)
- A 3–20 GHz SiGe HBT ultra-wideband LNA with gain and return loss control for multiband wireless applications (2010) (13)
- X-Ray Irradiation and Bias Effects in Fully-Depleted and Partially-Depleted SiGe HBTs Fabricated on CMOS-Compatible SOI (2006) (13)
- Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI (2005) (13)
- Electron beam damage of advanced silicon bipolar transistors and circuits (1988) (13)
- An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier (2016) (13)
- An investigation of electron and oxygen ion damage in Si npn RF power transistors (2009) (13)
- An Investigation of Single Event Transient Response in 45-nm and 32-nm SOI RF-CMOS Devices and Circuits (2013) (13)
- Scaling the silicon bipolar transistor for sub-100-ps ECL circuit operation at liquid nitrogen temperature (1990) (13)
- Packaging Effects of Multiple X-Band SiGe LNAs Embedded in an Organic LCP Substrate (2012) (13)
- Comparison and optimization of edge termination techniques for SiC power devices (2001) (13)
- Organic wafer-scale packaging for X-band SiGe low noise amplifier (2009) (13)
- A Compact Highly Efficient High-Power Ka-band SiGe HBT Cascode Frequency Doubler With Four-Way Input Transformer Balun (2018) (13)
- Substrate bias effects in vertical SiGe HBTs fabricated on CMOS-compatible thin film SOI (2005) (12)
- Fabrication of SiGe HBT BiCMOS Technology (2007) (12)
- Operation of SiGe bipolar technology at cryogenic temperatures (1994) (12)
- Developments in Radiation-Hardened Electronics Applicable to the Vision for Space Exploration (2007) (12)
- Junction Isolation Single Event Radiation Hardening of a 200 GHz SiGe:C HBT Technology Without Deep Trench Isolation (2009) (12)
- A comparison of npn and pnp profile design tradeoffs for complementary SiGe HBT Technology (2000) (12)
- Comparison of current gain and low-frequency noise degradation by hot electrons and hot holes under reverse EB stress in UHV/CVD SiGe HBTs (1998) (12)
- A SiGe 8–18-GHz Receiver With Built-In-Testing Capability for Self-Healing Applications (2014) (12)
- High‐Performance, Radiation‐Hardened Electronics for Space and Lunar Environments (2008) (12)
- A wide bandwidth sige broadband amplifier for 100 Gb/s Ethernet applications (2009) (12)
- Tunneling, Current Gain, and Transconductance in Silicon-Germanium Heterojunction Bipolar Transistors Operating at Millikelvin Temperatures (2017) (12)
- Re-Examining TID Hardness Assurance Test Protocols for SiGe HBTs (2009) (12)
- A Low-Loss Broadband Quadrature Signal Generation Network for High Image Rejection at Millimeter-Wave Frequencies (2018) (12)
- A 34–110 GHz wideband, asymmetric, broadside-coupled Marchand balun in 180 nm SiGe BiCMOS technology (2014) (12)
- Hole confinement and low-frequency noise in SiGe pFETs on silicon-on-sapphire (1999) (12)
- Temperature Scalable Modeling of SiGe HBT DC Currents Down to 43K (2006) (12)
- Cryogenic RF Small-Signal Modeling and Parameter Extraction of SiGe HBTs (2009) (12)
- Emerging application opportunities for SiGe technology (2008) (12)
- Electron-beam damage of self-aligned silicon bipolar transistors and circuits (1991) (12)
- 50 MeV Li3+ ion irradiation effects on advanced 200 GHz SiGe HBTs (2011) (11)
- A SiGe-BiCMOS Wideband (2–22 GHz) Active Power Divider/Combiner Circuit Supporting Bidirectional Operation (2016) (11)
- Performance of the SiGe HBT 8HP and 8WL technologies after high dose/fluence radiation exposure (2008) (11)
- High gain, high linearity, L-band SiGe low noise amplifier with fully-integrated matching network (2010) (11)
- A Compact, Wideband Lumped-Element Wilkinson Power Divider/Combiner Using Symmetric Inductors with Embedded Capacitors (2016) (11)
- An Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Pairs for SET-Mitigated RF Mixers (2016) (11)
- A High-Linearity, X-Band, SiGe Low-Noise Amplifier for Improved Dynamic Range in Next-Generation Radar and Wireless Systems (2009) (11)
- De-embedding transmission lines using a full-wave EM-simulated pad model (2010) (11)
- Collector Transport in SiGe HBTs Operating at Cryogenic Temperatures (2018) (11)
- Highly Linear High-Power 802.11ac/ax WLAN SiGe HBT Power Amplifiers With a Compact 2nd-Harmonic-Shorted Four-Way Transformer and a Thermally Compensating Dynamic Bias Circuit (2020) (11)
- Proton response of low-frequency noise in 0.20 μm 90 GHz fT UHV/CVD SiGe HBTs (2003) (11)
- A 6th order Butterworth SC low pass filter for cryogenic applications from −180°c to 120°c (2009) (11)
- Total Ionizing Dose Response of Triple-Well FET-Based Wideband, High-Isolation RF Switches in a 130 nm SiGe BiCMOS Technology (2013) (11)
- On the Temperature Dependence of Majority Carrier Transport in Heavily Arsenic-Doped Polycrystalline Silicon Thin Films (1989) (11)
- Silicon bipolar transistor: a viable candidate for high speed applications at liquid nitrogen temperature (1990) (11)
- Establishing best-practice modeling approaches for understanding single-event transients in Gb/s SiGe digital logic (2011) (11)
- A 5-6 GHz SiGe HBT monolithic active isolator for improving reverse isolation in wireless systems (2005) (11)
- Impact of deep trench isolation on advanced SiGe HBT reliability in radiation environments (2009) (11)
- A simple 4-port parasitic de-embedding methodology for high-frequency characterization of SiGe HBTs (2003) (11)
- Nuclear microbeam studies of silicon–germanium heterojunction bipolar transistors (HBTs) (2010) (11)
- W-band SiGe power amplifiers (2014) (11)
- The design and electrical characteristics of high-performance single-poly ion-implanted bipolar transistors (1989) (11)
- An Active Bi-Directional SiGe DPDT Switch With Multi-Octave Bandwidth (2016) (11)
- Noise performance of 0.35-/spl mu/m SOI CMOS devices and micropower preamplifier from 77-400 K (2004) (10)
- A SiGe-BiCMOS Wideband Active Bidirectional Digital Step Attenuator With Bandwidth Tuning and Equalization (2018) (10)
- Failure mechanisms in CMOS-based RF switches subjected to RF stress (2009) (10)
- A Mechanism Versus SEU Impact Analysis of Collector Charge Collection in SiGe HBT Current Mode Logic (2009) (10)
- A broadband, millimeter wave, asymmetrical Marchand balun in 180 nm SiGe BiCMOS technology (2012) (10)
- Modeling of temperature dependent IC-VBE characteristics of SiGe HBTs from 43–400K (2008) (10)
- Cryogenic Small Signal Operation of 0.18 μm MOSFETs (2007) (10)
- Mixed-mode stress degradation mechanisms in pnp SiGe HBTs (2009) (10)
- Impact of Total Ionizing Dose on a 4th Generation, 90 nm SiGe HBT Gaussian Pulse Generator (2014) (10)
- An Investigation of DC and RF Safe Operating Area of n-p-n $+$ p-n-p SiGe HBTs on SOI (2011) (10)
- The effects of mechanical planar biaxial strain in Si/SiGe HBT BiCMOS technology (2005) (10)
- Using saturated SiGe HBTs to realize ultra-low voltage/power X-band low noise amplifiers (2011) (10)
- A 60-GHz SiGe Radiometer Calibration Switch Utilizing a Coupled Avalanche Noise Source (2020) (10)
- On the design and implementation of transmission lines in commercial SiGe HBT BiCMOS processes (2004) (10)
- The Impact of Technology Node Scaling on nMOS SPDT RF Switches (2008) (10)
- A K-Band nMOS SPDT Switch and Phase Shifter Implemented in 130nm SiGe BiCMOS Technology (2009) (10)
- Neutral base recombination in advanced SiGe HBTs and its impact on the temperature characteristics of precision analog circuits (1995) (10)
- Exploration Technology Developments Program's Radiation Hardened Electronics for Space Environments (RHESE) Project Overview (2008) (10)
- CMOS Device Reliability for Emerging Cryogenic Space Electronics Applications (2005) (10)
- Co-design of a SiGe BiCMOS X-band, asymmetric, low insertion loss, high power handling SPDT Switch and an Ultra Low Noise LNA for next-generation T/R modules (2016) (10)
- Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 K (2009) (10)
- Hot-Carrier Degradation in Silicon-Germanium Heterojunction Bipolar Transistors (2015) (9)
- A New Wideband, Low Insertion Loss, High Linearity SiGe RF Switch (2020) (9)
- Hot-Carrier-Damage-Induced Current Gain Enhancement (CGE) Effects in SiGe HBTs (2018) (9)
- Design and Layout Techniques for the Optimization of nMOS SPDT Series-Shunt Switches in a 130nm SiGe BiCMOS Technology (2007) (9)
- A D-Band SiGe Power Amplifier Using a Four-Way Coupled-Line Wilkinson Combiner (2021) (9)
- On the Radiation Tolerance of SiGe HBT and CMOS-Based Phase Shifters for Space-Based, Phased-Array Antenna Systems (2008) (9)
- SiGe Profile Optimization for Improved Cryogenic Operation at High Injection (2006) (9)
- An X-Band SiGe Single-MMIC Transmit / Receive Module for Radar Applications (2007) (9)
- A Novel Circuit-Level SEU Hardening Technique for High-Speed SiGe HBT Logic Circuits (2007) (9)
- Optimization of SiGe HBT RF Switches for Single-Event Transient Mitigation (2015) (9)
- Total Ionizing Dose Effects in 70-GHz Bandwidth Photodiodes in a SiGe Integrated Photonics Platform (2019) (9)
- Common-base intermodulation characteristics of advanced SiGe HBTs (2008) (9)
- Implementation of a low cost, lightweight X-band antenna with integrated SiGe RF electronics (2010) (9)
- Low-frequency noise and phase noise behavior of advanced SiGe HBTs (2001) (9)
- A Physics-Based Trap-Assisted Tunneling Current Model for Cryogenic Temperature Compact Modeling of SiGe HBTs (2010) (9)
- Single-Event Effects in a W-Band (75-110 GHz) Radar Down-Conversion Mixer Implemented in 90 nm, 300 GHz SiGe HBT Technology (2015) (9)
- Cryogenic characterization of a ferroelectric field-effect-transistor (2020) (9)
- Physical Differences in Hot Carrier Degradation of Oxide Interfaces in Complementary (n-p-n+p-n-p) SiGe HBTs (2017) (9)
- Single event upset test results on a prescaler fabricated in IBM's 5HP silicon germanium heterojunction bipolar transistors BiCMOS technology (2001) (9)
- Optimization of SiGe bandgap-based circuits for up to 300 °C operation (2011) (9)
- New Approach for Pulsed-Laser Testing That Mimics Heavy-Ion Charge Deposition Profiles (2020) (9)
- 35 GHz/35 psec ECL pnp technology (1990) (9)
- Charge Collection and SEU in SiGe HBT Current Mode Logic Operating at Cryogenic Temperatures (2010) (9)
- Bipolar Transistors (2007) (9)
- Impact of proton irradiation on the RF performance of 0.12 /spl mu/m CMOS technology [MOSFET devices] (2005) (9)
- The design of SiGe HBT LNA for IMT-2000 mobile application (2002) (8)
- The Future of Electronics (2017) (8)
- A low power 1.8–2.6 dB noise figure, SiGe HBT wideband LNA for multiband wireless applications (2009) (8)
- On the Application of Inverse-Mode SiGe HBTs in RF Receivers for the Mitigation of Single-Event Transients (2017) (8)
- The effects of reverse-bias emitter-base stress on the cryogenic operation of advanced UHV/CVD Si- and SiGe-base bipolar transistors (1996) (8)
- A high-linearity inverse-mode SiGe BiCMOS RF switch (2010) (8)
- A 26 ps self-aligned epitaxial silicon base bipolar technology (1990) (8)
- An X-band inverse class-F SiGe HBT cascode power amplifier With harmonic-tuned output transformer (2017) (8)
- 4H-SiC Power-Switching Devices for Extreme-Environment Applications (2004) (8)
- The effect of carbon content on the minority carrier lifetime in lattice-matched p+-Si/p-SiGeC/n-Si/n+-Si diodes (2000) (8)
- A novel device structure using a shared-subcollector, cascoded inverse-mode SiGe HBT for enhanced radiation tolerance (2009) (8)
- Impact of Source/Drain contact and gate finger spacing on the RF reliability of 45-nm RF nMOSFETs (2011) (8)
- Radiation response of SiGe BiCMOS mixed-signal circuits intended for emerging lunar applications (2007) (8)
- Comparing RF linearity of npn and pnp SiGe HBTs (2009) (8)
- Extraction of a lumped element, equivalent circuit model for via interconnections in 3-D packages using a single via structure with embedded capacitors (2010) (8)
- Radiation-induced back-channel leakage in SiGe CMOS on silicon-on-sapphire (SOS) technology (1999) (8)
- Wide temperature range compact modeling of SiGe HBTs for space applications (2011) (8)
- Operating Voltage Constraints in 45-nm SOI nMOSFETs and Cascode Cores (2013) (8)
- A lightweight X-band organic antenna array with integrated SiGe amplifier (2010) (8)
- A UWB SiGe LNA for multi-band applications with self-healing based on DC extraction of device characteristics (2011) (8)
- Demonstration of Deep (80μm) RIE Etching of SiC for MEMS and MMIC Applications (2000) (8)
- Device-to-circuit interactions in SiGe technology: Challenges and opportunities (2014) (8)
- Novel Total Dose and Heavy-Ion Charge Collection Phenomena in a New SiGe HBT on >Thin-Film SOI Technology (2008) (8)
- Assessing the High-Temperature Capabilities of SiGe HBTs Fabricated on CMOS-compatible Thin-film SOI (2007) (8)
- Proton Tolerance of a Third-Generation , 0 . 12 μ m 185 GHz SiGe HBT Technology (2003) (8)
- Proton Tolerance of a Third-Generation , 0 . 12 μ m 185 GHz SiGe HBT Technology (2003) (8)
- A sub-50 ps single poly planar bipolar technology (1988) (8)
- Modeling of Bandgap Narrowing for Consistent Simulation of SiGe HBTs Across a Wide Temperature Range (2007) (8)
- The effects of proton irradiation on the performance of mm-wave transmission lines implemented in SiGe technology (2004) (7)
- An Investigation on the Optimization and Scaling of Complementary SiGe HBTs (2013) (7)
- A large-signal RF reliability study of complementary SiGe HBTs on SOI intended for use in wireless applications (2010) (7)
- On the scaling limits of low-frequency noise in SiGe HBTs (2003) (7)
- Submicrometer Si and Si-Ge epitaxial-base double-poly self-aligned bipolar transistors (1991) (7)
- Accurate AC transistor characterization to 110 GHz using a new four-port self-calibrated extraction technique (2004) (7)
- The Impact of Non-Ohmic Polysilicon Emitter Resistance on Bipolar Transistor Performance (1986) (7)
- Using proton irradiation to probe the origins of low-frequency noise variations in SiGe HBTs (2003) (7)
- A low-power and ultra-compact W-band transmitter front-end in 90 nm SiGe BiCMOS technology (2014) (7)
- The effect of 63 MeV hydrogen ion irradiation on 65 GHz UHV/CVD SiGe HBT BiCMOS technology (2011) (7)
- Sub-15 ps gate delay with new AC-coupled active pull-down ECL circuit (1991) (7)
- A 70 MHz - 4.1 GHz 5th-Order Elliptic gm-C Low-Pass Filter in Complementary SiGe Technology (2006) (7)
- Integrated silicon-germanium electronics for CubeSat-based radiometers (2013) (7)
- High-performance W-band LNA and SPDT switch in 0.13µm SiGe HBT technology (2015) (7)
- An Investigation of Total Ionizing Dose Damage on a Pulse Generator Intended for Space-Based Impulse Radio UWB Transceivers (2013) (7)
- Silicon Earth: Introduction to Microelectronics and Nanotechnology, Second Edition (2018) (7)
- On the potential of using SiGe HBTs on SOI to support emerging applications up to 300°C (2015) (7)
- A compact, transformer-based 60 GHz SPDT RF switch utilizing diode-connected SiGe HBTs (2013) (7)
- Wide-tuning range, amplitude-locked test signal source for self-healing, mixed-signal electronic systems (2011) (7)
- A V-Band SiGe Image-Reject Receiver Front-End for Atmospheric Remote Sensing (2018) (7)
- A compact 21 GHz inductorless differential quadrature ring oscillator implemented in SiGe HBT technology (2005) (7)
- Single-Event Transient Response of Comparator Pre-Amplifiers in a Complementary SiGe Technology (2017) (7)
- Impact of proton irradiation on the RF performance of 65 nm SOI CMOS technology (2008) (7)
- A $Ka$ -Band SiGe Bootstrapped Gilbert Frequency Doubler With 26.2% PAE (2018) (7)
- Operating SOI CMOS technology in extreme environments (2003) (7)
- TCAD modeling of accumulated damage during time-dependent mixed-mode stress (2013) (7)
- Impact of body tie and Source/Drain contact spacing on the hot carrier reliability of 45-nm RF-CMOS (2010) (7)
- An adaptive, wideband SiGe image reject mixer for a self-healing receiver (2011) (7)
- On the suitability of SiGe HBTs for high-temperature (to 300/spl deg/) electronics (2004) (7)
- A design methodology to achieve low input impedance and non-constant gain-bandwidth product in TIAs for optical communication (2013) (7)
- The effects of layout variation on the thermal characteristics of SiGe HBTs (2005) (7)
- Electrical and microstructural investigation of polysilicon emitter contacts for high-performance bipolar VLSI (1987) (7)
- Systematic linearity analysis of RFICs using a two-port lumped-nonlinear-source model (2005) (6)
- Non-TMR SEU-Hardening Techniques for SiGe HBT Shift Registers and Clock Buffers (2009) (6)
- Performance and reliability of SiGe devices and circuits for high-temperature applications (2009) (6)
- The effects of proton irradiation on the operating voltage constraints of SiGe HBTs (2005) (6)
- Design of a 250-Gbit/s SiGe HBT Electrooptic Modulator (2011) (6)
- A Comprehensive Understanding of the Efficacy of N-Ring SEE Hardening Methodologies in SiGe HBTs (2010) (6)
- Total Ionizing Dose Effects on a High-Voltage (>30V) Complementary SiGe on SOI Technology (2017) (6)
- A Study of Total Dose Mitigation Approaches for Charge Pumps in Phase-Locked Loop Applications (2011) (6)
- Effect of Ge profile on the frequency response of a SiGe pFET on sapphire technology (1997) (6)
- A New Negative-Differential-Resistance Effect in 350 GHz SiGe HBTs Operating at Cryogenic Temperatures (2005) (6)
- In situ investigation of 75 MeV boron and 100 MeV oxygen ion irradiation effects on 50 GHz silicon–germanium heterojunction bipolar transistors (2013) (6)
- Geometry-dependent low-frequency noise variations in 120 GHz f/sub T/ SiGe HBTs (2003) (6)
- SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients (2018) (6)
- The Use of Inverse-Mode SiGe HBTs as Active Gain Stages in Low-Noise Amplifiers for the Mitigation of Single-Event Transients (2017) (6)
- A 2-D numerical simulation methodology for noise figure optimization in UHV/CVD SiGe HBT's (1998) (6)
- Cryogenic matching performance of 90 nm MOSFETs (2009) (6)
- On the optimization and design of SiGe HBT cascode low-noise amplifiers (2005) (6)
- Profile Design Issues and Optimization of Epitaxial Si and SiGe-Base Bipolar Transistors and Circuits for 77K Applications (1991) (6)
- Epitaxial-base double-poly self-aligned bipolar transistors (1990) (6)
- A low power Ka-band SiGe HBT VCO using line inductors (2004) (6)
- An Electrostatic Discharge Protection Circuit Technique for the Mitigation of Single-Event Transients in SiGe BiCMOS Technology (2018) (6)
- Device Design Issues for a High-Performance Bipolar Technology with Si or SiGe Epitaxial Base (1991) (6)
- An Investigation of the Large-Signal RF Safe-Operating-Area on Aggressively-Biased Cascode SiGe HBTs for Power Amplifier Applications (2009) (6)
- Using SiGe technology in extreme environments (2007) (6)
- On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology (2015) (6)
- Enhanced low-temperature corner current-carrying inherent to shallow trench isolation (STI) (1999) (6)
- A comparison of 100 MeV oxygen ion and 60Co gamma irradiation effects on advanced 200 GHz SiGe heterojunction bipolar transistors (2015) (6)
- An investigation of fT and fmax degradation due to device interconnects in 0.5 THz SiGe HBT technology (2014) (6)
- An Exploration of Substrate Coupling at K-Band Between a SiGe HBT Power Amplifier and a SiGe HBT Voltage-Controlled-Oscillator (2007) (6)
- Measurement and Modeling of Carrier Transport Parameters Applicable to SiGe BiCMOS Technology Operating in Extreme Environments (2010) (6)
- Low-frequency noise in buried-channel SiGe n-MODFETs (2009) (6)
- Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis (2017) (6)
- Systematic analysis of RF distortion in SiGe HBT's (2001) (6)
- Noise performance of 0.35-/spl mu/m SOI CMOS devices and micropower preamplifier following 63-MeV, 1-mrad (Si) proton irradiation (2004) (6)
- Student Paper Base Current Degradation Mechanisms in NPN SiGe HBTs Subjected to High Current Stress (2013) (6)
- A 10 Mbps SiGe BiCMOS Transceiver for Operation Down to Cryogenic Temperatures (2007) (6)
- Low-temperature operation of silicon bipolar ECL circuits (1989) (6)
- An epitaxial emitter cap, SiGe-base bipolar technology with 22 ps ECL gate delay at liquid nitrogen temperature (1992) (6)
- A lightweight, 64-element, organic phased array with integrated transmit-receive SiGe circuitry in the X band (2011) (6)
- A comparison of npn vs. pnp SiGe HBT oscillator phase noise performance in a complementary SiGe platform (2010) (6)
- Measurement and Modeling of Silicon Heterestructure Devices (2007) (6)
- SiGe HBT CML Ring Oscillator With 2.3-ps Gate Delay at Cryogenic Temperatures (2010) (6)
- Integrated Silicon Photonics for Enabling Next-Generation Space Systems (2021) (6)
- Evaluation of Two SiGe HBT Technologies for the ATLAS sLHC Upgrade (2008) (5)
- Low-frequency noise variation in scaled SiGe HBTs (2002) (5)
- Micronimbus: A cubesat temperature profilometer for the earth's atmosphere using a single-chip 60 GHZ sige radiometer (2017) (5)
- Next Generation of Automotive Radar with Leading-Edge Advances in SiGe Devices and Glass Panel Embedding (GPE) (2018) (5)
- Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs (2001) (5)
- AC-coupled complementary push-pull ECL circuit with 34 fJ power-delay product (1993) (5)
- ff ects of Radiation on 1 / f Noise in Complementary ( npn + pnp ) SiGe HBTs (2004) (5)
- Event driven mixed signal modeling techniques for System-in-Package functional verification (2010) (5)
- The Effects of Proton Irradiation on the Performance of High-Voltage n-MOSFETs Implemented in a Low-Voltage SiGe BiCMOS Platform (2008) (5)
- 4.4 A Highly Linear High-Power 802.11ac/ax WLAN SiGe HBT Power Amplifier Using a Compact 2nd-Harmonic-Shorting Four-Way Transformer and Integrated Thermal Sensors (2019) (5)
- Themixed-Mode Damage Spectrum of Sige HBTs (2007) (5)
- SiGe Technology as a Millimeter-Wave Platform: Scaling Issues, Reliability Physics, Circuit Performance, and New Opportunities (2016) (5)
- A New Device Phenomenon in Cryogenically-Operated SiGe HBTs (2006) (5)
- Frequency- and amplitude-tunable X-to-Ku band SiGe ring oscillators for multiband BIST applications (2010) (5)
- A W-band integrated silicon-germanium loop-back and front-end transmit-receive switch for Built-in-self-test (2015) (5)
- Investigation of Single-Event Transients in (2003) (5)
- Radiation-Hardened Electronics for Space Environments (RHESE) (2007) (5)
- Utilizing SiGe HBT Power Detectors for Sensing Single-Event Transients in RF Circuits (2018) (5)
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- Using Bessel beams and two-photon absorption to predict radiation effects in microelectronics. (2019) (5)
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- Test synopsis of : The E ff ects of Radiation Type on the Tolerance of High-Power 4 H-SiC Diodes (2004) (0)
- Total-Ionizing-Dose Response of SiGe HBTs at Elevated Temperatures (2022) (0)
- A Warm Welcome to Two New T-ED Editors (2014) (0)
- Semiconductor Device Technologies for Extreme Environments (2012) (0)
- The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology (2019) (0)
- Miracle Workers—A Round of Much Deserved Applause for the T-ED and EDL Staff (2012) (0)
- Bipolar Junction Transistor (2014) (0)
- Silicon-Germanium (SiGe) Technology for Distributed Architecture in Extreme Temperature Environments (2007) (0)
- EX-OFFICIO MEMBERS (Only includes Standing Committee Vice-Presidents, Technical Committee Chairs and Publication Editors-in-Chief, unless already listed above) (2009) (0)
- Localized Excitation of Silicon Photonic Waveguides for Measurement of Free-Carrier Lifetime and Surface Recombination Velocity (2021) (0)
- Advanced bipolar technology for the 1990s (1991) (0)
- Primer on MOSFETs (2012) (0)
- Probing proton damage in SOI CMOS technology by using lateral bipolar action (2003) (0)
- Improved noise models for high-speed SIGE HBT RF circuit design (2003) (0)
- Properties of Silicon and Germanium: Properties of Silicon and Germanium (2007) (0)
- Impact of Device Layout on Thermal Parameters and RF Performance of 90-nm SiGe HBTs (2023) (0)
- Modeling Transient Loss Due to Ionizing Particles in Silicon Photonic Waveguides (2022) (0)
- Recent Results on SEU Hardening of SiGe HBT Logic Circuits (2006) (0)
- PHYSICAL UNDERSTANDING OF STRAINED-SILICON AND SILICON GERMANIUM FETS FOR RF AND MIXED-SIGNAL APPLICATIONS (2008) (0)
- Widget Deconstruction #1: Smartphone (2017) (0)
- Innumerable Biographies: A Brief History of the Field (2017) (0)
- Probing the Magnetodynamics of Magnetic Tunnel Junctions with the Aid of SiGe HBTs (2018) (0)
- A Comparison of Hot Carrier and 50 MeV Li3+ Ion Induced Degradation in the Electrical Characteristics of Advanced 200 GHz SiGe HBT (2014) (0)
- Properties of Silicon (2015) (0)
- AM/PM Nonlinearities in SiGe HBTs (2009) (0)
- High Bitrate Circuits (0)
- Bricks and Mortar: Micro/Nanoelectronics Fabrication (2017) (0)
- Overview: Optoelectronic Components (2005) (0)
- SiGe Based Low Temperature Electronics for Lunar Surface Applications (2012) (0)
- Overview: Fabrication of SiGe HBT BiCMOS Technology (2005) (0)
- MicroNimbus: A Single-Chip 60 GHz SiGe Radiometer for Spaceborne Remote Sensing (2019) (0)
- Conference Co-Chairs (2004) (0)
- SiGe Based Low Temperature Electronics for Lunar Applications (2011) (0)
- A Matter of Scale (2017) (0)
- Cryogenic temperature non-scaling of linear resistance in n-MOSFETs exhibiting reverse short-channel effect (2000) (0)
- A 5-GHz Injection-Locked Delay Cell with 10–25 ns Adjustable Group-Delay in a 130-nm SiGe BiCMOS Technology (2022) (0)
- The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs (2023) (0)
- Electronics for Extreme Environments (2001) (0)
- Planetary Temperature Ranges and Radiation Levels (2012) (0)
- Real-World Extreme Environment Applications (2012) (0)
- A 117–155-GHz SiGe HBT $D$-Band Subharmonic Mixer Utilizing a Novel 180$^{\circ}$ Hybrid Coupler (2023) (0)
- An investigation of the temperature dependent linearity of weakly-saturated, electrically-matched SiGe NPN and PNP HBTs (2014) (0)
- Properties of Silicon and Germanium (2007) (0)
- Heavy Ion Microbeam- and Broadbeam-Induced Current Transients in SiGe HBTs (2009) (0)
- The Generalized Moll–Ross Relations (2005) (0)
- A 110–145-GHz SiGe HBT D-Band Vector Modulator Phase Shifter Utilizing Differential Quadrature Delay Lines (2023) (0)
- Interfacing SiGe Technology with Nanoscale Magnetic Tunnel Junctions (2018) (0)
- A SiGe Remote Electronics Unit (2012) (0)
- A Compact, Low Loss, and Broadband Two-Section Lumped-Element Wilkinson Power Combiner Using 130 nm SiGe HBT BiCMOS Technology (2022) (0)
- Anomalous low-frequency noise behavior in 210 GHz SiGe HBTs (2005) (0)
- A Millimeter-Wave Linear Lo SiGe HBT Technology with (2004) (0)
- UHF Micro-Transceiver Development Project (2012) (0)
- Down-Hole Instrumentation Package for Energy Well Drilling (2012) (0)
- The Big Picture (2018) (0)
- Overview: Circuits and Applications (2005) (0)
- BCTM 2008 Table of Contents (2008) (0)
- An investigation on dose rate effect of 60Co gamma radiation on 200 GHz SiGe HBTs (2020) (0)
- An LCP package model for use in chip/package co-design of an X-band SiGe Low Noise Amplifier (2009) (0)
- A Wide Locking-Range, Low Phase-Noise and High Output Power D-Band SiGe PLL (2020) (0)
- Cryogenic Total-Ionizing-Dose Response of 4th-Generation SiGe HBTs Using 1-MeV Electrons for Europa-Surface Applications (2023) (0)
- Physics of Temperature and Temperature’s Role in Carrier Transport (2012) (0)
- Overview: Heterostructure FETs (2005) (0)
- Device and Circuit Reliability in Extreme Environments (2012) (0)
- Single Event Transients (SETs) in RF Circuits (2006) (0)
- Project 21-0041 / ?Strategic Radiation Hardening of Advanced Radio Frequency Integrated Circuits?. (2021) (0)
- Silicon-Germanium Electronics and Photonics for Space Systems (2022) (0)
- Single-Event Transients in a Commercially Available, Integrated Germanium Photodiode for Silicon Photonic Systems (2022) (0)
- Primer on Si and SiGe Bipolar Transistors (2012) (0)
- High-Speed Single-Event Current Transient Measurements in SiGe HBTs (2009) (0)
- Dynamic Behavior of Breakdown Mechanisms in SiGe HBTs (2021) (0)
- Overview: Other Heterostructure Devices (2005) (0)
- Circuit Design for Extreme Environments (2012) (0)
- Verification of Analog and Mixed-Signal Systems (2012) (0)
- An Efficient Wideband 94 GHz On-Chip Air-Cavity Backed Planar Inverted-F Antenna (2021) (0)
- Substrate engineering concepts for radiation-induced charge collection mitigation in deep trench isolation technologies. (2006) (0)
- Electron impact-ionization effects in UHV/CVD SiGe HBT's in the temperature range of 300 to 83 K (1998) (0)
- DESIGN OF WIDEBAND SILICON-GERMANIUM RF FRONT END CIRCUITS FOR BROADBAND COMMUNICATIONS SYSTEMS (2019) (0)
- 4 Low-Frequency Noise (2018) (0)
- Environments and Prediction Tools (2012) (0)
- An Anniversary to Celebrate (2013) (0)
- Impact of the non-ideal temperature dependence of IC-VBE on ultra-wide temperature range SiGe HBT bandgap reference circuits (2010) (0)
- Examples of Extreme Environment Circuit Designs (2012) (0)
- The Propagation of Extended SET Tails in RF Amplifiers Using 45-nm CMOS on PDSOI (2022) (0)
- New Subject Category on Emerging Technologies and Devices (2013) (0)
- Non-TMR SEU-hardening techniques for SiGe HBT shift registers and clock buffers (2009) (0)
- 3 Second-Order Effects (2018) (0)
- Voltage-Controlled Oscillator Utilizing Inverse-Mode SiGe-HBT Biasing Circuit for the Mitigation of Single-Event Effects (2022) (0)
- Extraction of collector-base resistance of UHV/CVD SiGe HBTs operating at low temperatures (1998) (0)
- Heavy Ion Current Transients in SiGe HBTs (2009) (0)
- SPIRIT - A Bipolar/BiCMOS Isolation Technology For High-Performance VLSI (1993) (0)
- SIGE HBT cryogenic digital amplifier characterization (2007) (0)
- A comparison of 100 MeV oxygen ion and 60Co gamma irradiation effects on advanced 200 GHz SiGe heterojunction bipolar transistors (2015) (0)
- Performance vs. Reliability Tradeoffs of Medium Breakdown and High Performance Cascode Amplifier Cells (2022) (0)
- 2014IEEENuclearandSpaceRadiationEffects ConferenceAwards CommentsbytheChairman I (2014) (0)
- A Grab-Bag Glossary of Useful Techno-Geek Terms and Acronyms (2015) (0)
- Radiation Effects On Emerging Electronic Materials And Devices (2010) (0)
- Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam (2020) (0)
- Using Temperature to Explore the Scaling Limits of SiGe HBTs (2012) (0)
- Cryogenic Electronics for High-Energy Physics Experiments (2012) (0)
- Direct Parameter Extraction Of Base and Emitter Resistances For SiGe HBTs Using DC Data Only (2010) (0)
- Response of Integrated Silicon Microwave pin Diodes to X-Ray and Fast-Neutron Irradiation (2021) (0)
- A SiGe HBT D-Band LNA Utilizing Asymmetric Broadside Coupled Lines (2023) (0)
- Epitaxial Graphene on SiC for Ultra-high Frequency Transistors (2013) (0)
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