Josef Lutz

Q: What Schools Are Affiliated With Josef Lutz

Josef Lutz is affiliated with the following schools: Chemnitz University of Technology, University of Stuttgart, Technische Universität Ilmenau, Technical University of Munich

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Josef Lutz

Engineering

#2655

World Rank

#3615

Historical Rank

Photonics

#93

World Rank

#94

Historical Rank

Materials Science

#510

World Rank

#518

Historical Rank

Electrical Engineering

#1005

World Rank

#1081

Historical Rank

engineering Degrees

Josef Lutz

Physics

#3729

World Rank

#5236

Historical Rank

physics Degrees

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Engineering
Physics

Josef Lutz's Degrees

PhD Physics Technical University of Munich
Masters Electrical Engineering Technical University of Munich

Why Is Josef Lutz Influential?

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According to Wikipedia, Josef Lutz is a German physicist and electrical engineer. Career Lutz grew up in a small village called Baldern in the southern part of Germany, his father was smith and farmer. In 1973, Lutz received his high-school diploma from the Theodor-Heuss-Gymnasium, Aalen. He studied Physics at the University of Stuttgart and received his Diploma in Physics in 1982. After his military service he joined Semikron Electronics in Nuremberg. The main focus of his work was on Gate turn-off thyristor and fast diodes. In 1999, he graduated as PhD in Electrical Engineering from the Technische Universität Ilmenau, Germany. Since August 2001, he has been Professor of the Chair of Power Electronics and Electromagnetic Compatibility at TU Chemnitz. He is senior member of IEEE, member of the board of directors of the PCIM Europe, member of the board of directors of the ZfM, of the International Steering Committee of the EPE, the Technical Committee of the ISPSD, the Program Committee of the ISPS, the Technical Program Committee of the CIPS and member of the Editorial Advisory Board of Microelectronics Reliability. In 2005, he was awarded with the degree of Honorable Professor by the North-Caucasus Federal University, Russia. Josef Lutz is among the top 1 percent of the world's most cited researchers in their field.

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Josef Lutz's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Model for Power Cycling lifetime of IGBT Modules - various factors influencing lifetime (2008) (503)
Semiconductor Power Devices: Physics, Characteristics, Reliability (2011) (396)
Semiconductor Power Devices (2011) (238)
Challenges Regarding Parallel Connection of SiC JFETs (2011) (110)
Power cycling with high temperature swing of discrete components based on different technologies (2004) (84)
On the destruction limit of Si power diodes during reverse recovery with dynamic avalanche (2003) (76)
Power cycling induced failure mechanisms in solder layers (2007) (70)
Double-sided low-temperature joining technique for power cycling capability at high temperature (2005) (68)
Power cycling methods for SiC MOSFETs (2017) (61)
Power cycling induced failure mechanisms in the viewpoint of rough temperature environment (2008) (60)
Power cycling capability of Modules with SiC-Diodes (2014) (58)
Power Cycling at High Temperature Swings of Modules with Low Temperature Joining Technique (2006) (48)
Dynamic avalanche and reliability of high voltage diodes (2003) (48)
On the Origin of Thermal Runaway in a Trench Power MOSFET (2011) (46)
The $\hbox{nn}^{+}$-Junction as the Key to Improved Ruggedness and Soft Recovery of Power Diodes (2009) (46)
Short circuit III in high power IGBTs (2009) (46)
Mechanical analysis of press-pack IGBTs (2012) (45)
Packaging and Reliability of Power Modules (2014) (44)
Surge Current Ruggedness of Silicon Carbide Schottky- and Merged-PiN-Schottky Diodes (2008) (43)
Possible failure modes in Press-Pack IGBTs (2015) (43)
Dynamic avalanche in bipolar power devices (2012) (42)
Influence of the clamping pressure on the electrical, thermal and mechanical behaviour of press-pack IGBTs (2013) (42)
Requirements in power cycling for precise lifetime estimation (2016) (40)
Short-circuit ruggedness of high-voltage IGBTs (2012) (36)
A Novel Diode Structure with Controlled Injection of Backside Holes (CIBH) (2006) (35)
On the formation of stationary destructive cathode-side filaments in p+-n−-n+ diodes (2009) (34)
Fast recovery diodes - reverse recovery behaviour and dynamic avalanche (2004) (34)
Cathode-Side Current Filaments in High-Voltage Power Diodes Beyond the SOA Limit (2013) (33)
IGBT-Modules: Design for reliability (2009) (31)
Determination of parameters of radiation induced traps in silicon (2002) (30)
Difference in Device Temperature Determination Using p-n-Junction Forward Voltage and Gate Threshold Voltage (2019) (29)
Power cycling reliability results of GaN HEMT devices (2018) (29)
The CIBH Diode - Great Improvement for Ruggedness and Softness of High Voltage Diodes (2008) (28)
Thermal impedance spectroscopy of power modules (2011) (28)
IMPATT oscillations in fast recovery diodes due to temporarily charged radiation-induced deep levels (1998) (28)
Irradiation-Induced Deep Levels in Silicon for Power Device Tailoring (2006) (28)
Packaging and Reliability of Power Devices (2010) (26)
Stable dynamic avalanche in Si power diodes (1999) (26)
Some aspects on ruggedness of SiC power devices (2014) (26)
Influence of buffer structures on static and dynamic ruggedness of high voltage FWDs (2005) (23)
Determination of the thermal and electrical contact resistance in press-pack IGBTs (2013) (23)
Dynamic self-clamping at short-circuit turn-off of high-voltage IGBTs (2013) (23)
The influence of turn-off dead time on the reverse-recovery behaviour of synchronous rectifiers in automotive DC/DC-converters (2009) (23)
Influence of thermal cross-couplings on power cycling lifetime of IGBT power modules (2012) (22)
The plasma extraction transit-time oscillation in bipolar power Devices-Mechanism,EMC effects, and prevention (2006) (22)
Shubnikov-de Haas oscillations and negative magnetoresistance under hot-electron conditions in Si/SiGe heterostructures (1994) (21)
Compensation and doping effects in heavily helium-radiated silicon for power device applications (2006) (20)
Charge-Carrier Plasma Dynamics During the Reverse-Recovery Period in $\hbox{p}^{+}$-$\hbox{n}^{-}$ - $\hbox{n}^{+}$ Diodes (2008) (19)
A first loss evaluation using a vertical SiC-JFET and a conventional Si-IGBT in the bidirectional matrix converter switch topology (2005) (19)
Electro - Thermal Simulations and Experimental Results on the Surge Current Capability of 1200 V SiC MPS Diodes (2014) (19)
Possibilities and limits of axial lifetime control by radiation induced centers in fast recovery diodes (2004) (19)
Various structures of 1200V SiC MPS diode models and their simulated surge current behavior in comparison to measurement (2016) (19)
Breakdown of gate oxide of 1.2 kV SiC-MOSFETs under high temperature and high gate voltage (2016) (18)
First power cycling results of improved packaging technologies for hybrid electrical vehicle applications (2010) (18)
Experimental Investigation of Linear Cumulative Damage Theory With Power Cycling Test (2019) (17)
Integration of supercapacitors as transient energy buffer in automotive power nets (2007) (17)
Methods for virtual junction temperature measurement respecting internal semiconductor processes (2015) (16)
Approach of a physically based lifetime model for solder layers in power modules (2013) (16)
Passive turn-on process of IGBTs in Matrix converter applications (2009) (15)
A simplified algorithm for predicting power cycling lifetime in Direct Drive wind power systems (2012) (15)
Destruction behavior of power diodes beyond the SOA limit (2012) (15)
Time resolved measurements of the energy relaxation in the 2DEG of AlGaAs/GaAs (1993) (15)
Effects of negative differential resistance in high power devices and some relations to DMOS structures (2010) (14)
The influence of asymmetries on the parallel connection of IGBT chips under short-circuit condition (2011) (14)
Improving the accuracy of junction temperature measurement with the square-root-t method (2013) (13)
Ruggedness analysis of 3.3 kV high voltage diodes considering various buffer structures and edge terminations (2008) (13)
Modular converter for fuel cell systems with buffer storage (2005) (13)
Filament-induced thermomigration of an aluminum drop at the cathode-side of high-voltage power diodes (2011) (13)
Reliability and reliability investigation of wide-bandgap power devices (2018) (13)
Power cycling tests at high temperatures with IGBT power modules for hybrid electrical vehicle applications (2010) (13)
Investigation of the avalanche ruggedness of SiC MPS diodes under repetitive unclamped-inductive-switching stress (2019) (12)
Application of carrier lifetime control by irradiation to 1.2kV NPT IGBTs (2004) (12)
Repetitive surge current test of SiC MPS diode with load in bipolar regime (2018) (12)
Thermal impedance spectroscopy of power modules during power cycling (2011) (12)
Observation of current filaments in IGBTs with thermoreflectance microscopy (2018) (12)
Effects of different buffer structures on the avalanche behaviour of high voltage diodes under high reverse current conditions (2006) (11)
Influence of parasitic inductances on transient current sharing in parallel connected synchronous rectifiers and Schottky-barrier diodes (2007) (11)
Dynamic avalanche in Si power diodes and impact ionization at the nn + junction (2000) (11)
Transient avalanche oscillation of IGBTs under high current (2014) (11)
Analysis of a p+p-n-n+ diode structure (2008) (11)
Unified view on energy and electrical failure of the short-circuit operation of IGBTs (2018) (10)
Power cycling results of high power IGBT modules close to 50 Hz heating process (2019) (10)
Ruggedness of 1200 V SiC MPS diodes (2015) (10)
Internal processes in power semiconductors at virtual junction temperature measurement (2016) (9)
Requirements for MOSFETs in Fuel Cell Power Conditioning Applications (2006) (9)
Optimization of diodes using the SPEED concept and CIBH (2011) (9)
Proportional Driver for SiC BJT's in electric vehicle inverter application (2014) (9)
Power cycling capability of silicon low-voltage MOSFETs under different operation conditions (2019) (9)
Efficiency and lifetime of an active power filter with SiC-MOSFETs for aerospace application (2014) (8)
Surge current capability of IGBTs (2012) (8)
Validity of power cycling lifetime models for modules and extension to low temperature swings (2020) (8)
Measurement of a complete HV IGBT I-V-characteristic up to the breakdown point (2013) (8)
Study of Polycrystalline and Amorphous LPCVD Silicon Films by Atomic Force Microscopy (1997) (8)
Design and evaluation of state of the art rectifiers dedicated for a 46 kW E-ECS aerospace application with respect to power density and reliability (2011) (8)
Design and Evaluation of Gate Drivers of SiC MOSFET (2015) (8)
Physical phenomena in Si power diodes operating at high carrier injection levels and high temperature (2000) (8)
Reliability of discrete power semiconductor packages and systems — D2Pak and CanPAK in comparison (2013) (7)
Applying device simulation for lifetime-controlled devices (2002) (7)
Investigation of the bipolar degradation of SiC MOSFET body diodes and the influence of current density (2021) (7)
Study on power cycling test with different control strategies (2018) (7)
Ruggedness of high voltage diodes under very hard Commutation Conditons (2007) (7)
Influence of Lateral Temperature Gradients on the Failure Modes at Power Cycling (2021) (7)
Temperature Influence on the Accuracy of the Transient Dual Interface Method for the Junction-to-Case Thermal Resistance Measurement (2021) (7)
A new diode structure with Inverse injection Dependency of Emitter Efficiency (IDEE) (2010) (7)
Reliability and Reliability Testing (2018) (7)
Electro-Thermal Simulation of Current Filamentation in 3.3-kV Silicon p+- n-- n+Diodes with Differenth Edge Terminations (2006) (6)
Effects of metallisation and bondfeets in 3.3 kV free-wheeling diodes at surge current conditions (2008) (6)
Investigation of Ton Dependency of Al-Clad Cu Bond Wires Under Power Cycling Tests (2018) (6)
Correction of Delay-Time-Induced Maximum Junction Temperature Offset During Electrothermal Characterization of IGBT Devices (2021) (6)
Liquid cooling methods for power electronics in an automotive environment (2011) (6)
The influence of bulk parameters on the switching behavior of FWDs for traction application (2004) (6)
High-Current Power Cycling Test-Bench for Short Load Pulse Duration and First Results (2016) (6)
The Influence of the Gate Driver and Common-Source Inductance on the Short-Circuit Behavior of IGBT Modules and Protection (2020) (6)
Seebeck difference - temperature sensors integrated into smart power technologies (2009) (6)
Measurement Error Caused by the Square Root t Method Applied to IGBT Devices during Power Cycling Test (2020) (5)
Scaling of temperature sensors for smart power MOSFETs (2008) (5)
A novel Injection Enhanced Floating Emitter (IEFE) IGBT structure improving the ruggedness against short-circuit and thermal destruction (2017) (5)
Power cycling test with power generated by an adjustable part of switching losses (2017) (5)
Switching ruggedness and surge-current capability of diodes using the self-adjusting p emitter efficiency diode concept (2014) (5)
Packaging of Power Devices (2018) (5)
Temperature Dependent Properties of Different Lifetime Killing Technologies on Example of Fast Power Diodes (2001) (5)
Influence of the base contact on the electrical characteristics of SiC BJTs (2007) (5)
Analysis of dynamic impatt oscillations caused by radiation induced deep centres with local and homogenous vertical distribution (2004) (5)
Three-phase voltage source inverter using SiC MOSFETs — Design and Optimization (2015) (5)
MOS Transistors and Field Controlled Wide Bandgap Devices (2018) (4)
Using the on-state-Vbe,sat-voltage for temperature estimation of SiC-BJTs during normal operation (2015) (4)
Simulation and Experimental Results of Irradiated Power Diodes (1999) (4)
Power Device-Induced Oscillations and Electromagnetic Disturbances (2010) (4)
Thyristors and IGBTs with integrated self-protection functions (2007) (4)
Optimization of the selenium field-stop profile with respect to softness and robustness (2014) (4)
N-type doping of silicon by proton implantation (2011) (4)
A diode structure with anode side buried p doped layers for damping of dynamic avalanche (2007) (3)
Gallium arsenide semiconductor parameters extracted from pin diode measurements and simulations (2016) (3)
Stable and unstable dynamic avalanche in fast Silicon Power Diodes (2001) (3)
IGBTs conducting diode-like surge currents (2014) (3)
Simulation of current crowding in inverse diodes of low-voltage Si MOSFETs at power cycling (2019) (3)
The Trade-Off between Surge-Current Capability and Reverse-Recovery Behaviour of High-Voltage Power Diodes (2010) (3)
Irradiation-induced deep levels in silicon (2004) (3)
Effects of inorganic encapsulation on power cycling lifetime of aluminum bond wires (2018) (3)
Structure and electrical resistivity of liquid Ni-Ge alloys (1996) (3)
Current filament behavior in IGBTs of different voltage classes investigated by measurements and simulations (2020) (3)
Destructive Mechanisms in Power Devices (2010) (3)
IGBTs working in the NDR region of their I-V characteristics (2015) (3)
Improving the short circuit ruggedness of IGBTs (2016) (2)
PT-IGBT and freewheeling diode for 3.3 kV using lifetime control techniques and low-efficiency emitters (2002) (2)
Power Semiconductor Devices – Key Components for Efficient Electrical Energy Conversion Systems (2010) (2)
Temperature determination of SiC MPS diodes during surge current event with measurement and simulation (2019) (2)
High-Frequency Dephasing and Hot Electron Effects in Quasi-1D Wires (1991) (2)
18.14 GaAs pin Diode Devices and Technology for High Power applications at 600V and above (2013) (2)
Analysis of the plastic deformation in aluminium metallizations of Al2O3-based DAB substrates (2013) (2)
Specific aspects regarding evaluation of power cycling tests with SiC devices (2020) (2)
Power Devices – Future Trends, Future Requirements (2006) (2)
Surge Current Behaviour of Different IGBT Designs (2015) (2)
Al modification as indicator of current filaments in IGBTs under repetitive SC operation (2019) (2)
Doping Effects in Heavily Helium-Radiated Silicon (2004) (2)
On the way to a New Generation of Production Passenger Car-Integrated Liquid Hydrogen Storage Systems (2006) (2)
Evaluation of the submodel technique for FEM simulations of power electronic housings under power cycling conditions (2013) (1)
Thermomechanical behaviour of inverse diode in SiC MOSFETs under surge current stress (2020) (1)
Topologies for inverter like operation of power cycling tests (2016) (1)
Measurements and simulations of the turn-off behaviour of diodes with deep energy levels of Se implanted in Si (2013) (1)
Microwave Studies of Quasi-One Dimensional Wires (1991) (1)
High-Frequency Quantum Transport (1991) (1)
Power Electronic Systems (2010) (1)
A Clamping Circuit for Short Circuit Ruggedness Improvement of Discrete IGBT Devices based on the di/dt Feedback of Emitter Stray Inductance (2019) (1)
Study on the IGBT Short Circuit Type II Behavior Considering the Plasma Effect (2023) (1)
Investigation of the current collapse behaviour in GaN power HEMTs with highly adjustable pulse and measurement concept (2020) (1)
Gate Oxide Reliability of 1.2 kV and 6.5 kV SiC MOSFETs under Stair-Shaped Increase of Positive and Negative Gate Bias (2021) (1)
The influence of field- and diffusion-current components on the charge-carrier plasma dynamics during turn-off process of p+-n--n+ diodes (2008) (1)
Structure and Switching Behavior Optimization of fast 4.5 kV Press-Pack Diodes (2019) (1)
Objections against the current limits for microwave radiation (2007) (1)
The Evolution of the Universe in the Light of Modern Microscopic and High‐Energy Physics (2006) (1)
Semiconductor Power Devices as Key Technology for a Future Sustainable Society (2017) (1)
Influence of different test strategies on the power cycling test results of 6.5 kV SiC MOSFETs (2021) (1)
A NovelDiodeStructure with Controlled Injection ofBackside Holes(CIBH) (2006) (0)
Gate voltage overdrive for short term peak current control of igbt switches (2016) (0)
A study of the interacting electron system in stressed (001) Si MOSFETs (1996) (0)
Interaction effects in the many-valley system of Si MOSFET's (1997) (0)
Infulence of small emitter and contact non-uniformities on the current filamentation in 3.3-kV p+ - n- -n+ silicon diodes (2006) (0)
High resolution spectroscopy of the 13Σg+ (b) ← 13Σu+ (x) transition of Na2 (1996) (0)
3.3 kV IGBT and diode chipset using lifetime control techniques and low-efficiency emitters (2002) (0)
A diode structure withanodeside buried pdoped layers fordampingofdynamic avalanche (2007) (0)
Packaging and Modules with SiC MOSFETs and Related Reliability Aspects (2019) (0)
EMC Problems due to Transit-Time Oscillations in Bipolar Power Devices (2004) (0)
Modular converter forfuel cell systemswithbuffer storage (2005) (0)
AFM Study of Oxygen Precipitates in Single Crystal Silicon (2017) (0)
Investigation of repetitive short-circuit operation of 1200 V IGBTs in the IC-VCE phase space (2019) (0)
Introduction to Power Device Technology (2018) (0)
Determination of parameters with high impact on fatigue of new Interconnect Technologies (2015) (0)
Investigation of deep levels in SiC-Schottky diodes with frequency resolved admittance spectroscopy (2015) (0)
Power Cycling Results of Discrete Gallium Nitride Gate Injection Transistors (2021) (0)
High-speed power diode and manufacture therefor (1994) (0)
Influence of power cycling ageing on the current and voltage transitions during hard switching of IGBT devices (2021) (0)
A process for producing a buried n-type doped semiconductor region in a semiconductor body and semiconductor component (2004) (0)
STUDY OF THE CONSTRUCTION, FABRICATION, AND MOUNTING OF THE SATURNE ELECTROMAGNET (1959) (0)
A bipolar semiconductor device and method of manufacturing a semiconductor diode (2009) (0)
Impact of Bond Wire Configuration on the Power Cycling Capability of Discrete SiC-MOSFET Devices (2022) (0)
Frequency-Dependent Description of the Thermal Energy Inputs in Each Layer of a Semiconductor by Using Bode Diagrams (2013) (0)
Integrated Power Electronic Systems (2018) (0)
High resolution spectroscopy of the 132 ; ( b ) 13 Zu + ( x ) transition of Na 2 (0)
Semiconductor device with optimized edge termination (2011) (0)
Parameters of radiation-induced centers for simulation of irradiated power devices (2002) (0)
Quantum Hall Effect and Related Magneto-transport in Silicon (001) MOSFETs Under Uniaxial Stress (1989) (0)
Compact PIN-Diode Model including Dynamic Avalanche and Lifetime Control in MATLAB (2016) (0)
SiC Reliability Aspects (2021) (0)
Comparison of Zth measurement of direct oil dual cooled power modules and water cooled modules (2019) (0)
TA-B7 resonant impact ionization in Ga1-xAlxSb p-i-n avalanche photodiodes (1980) (0)
Requirements forMOSFETs inFuelCellPower Conditioning Applications (2006) (0)
Power semiconductor component for blocking voltages over 2000V (2002) (0)
High-speed power diode (1995) (0)
Short Introduction to Power Device Technology (2010) (0)
Reliability aspects of 3D integrated power devices (2021) (0)
PowerCycling atHighTemperature Swings of Modules withLowTemperature Joining Technique (2006) (0)

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What Schools Are Affiliated With Josef Lutz?

Josef Lutz is affiliated with the following schools:

Josef Lutz's Academic­Influence.com Rankings

Josef Lutz's Degrees

Why Is Josef Lutz Influential?

Josef Lutz's Published Works

Published Works

Other Resources About Josef Lutz

What Schools Are Affiliated With Josef Lutz?

Josef Lutz's AcademicInfluence.com Rankings