Jun-ichi Nishizawa
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Japanese physicist
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Physics
Jun-ichi Nishizawa's Degrees
- Doctorate Electrical Engineering Tohoku University
Why Is Jun-ichi Nishizawa Influential?
(Suggest an Edit or Addition)According to Wikipedia, Jun-ichi Nishizawa was a Japanese engineer and inventor. He is known for his electronic inventions since the 1950s, including the PIN diode, static induction transistor, static induction thyristor, SIT/SITh. His inventions contributed to the development of internet technology and the information age.
Jun-ichi Nishizawa's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Field-effect transistor versus analog transistor (static induction transistor) (1975) (376)
- Molecular layer epitaxy (1985) (264)
- Tunable terahertz wave generation in the 3- to 7-THz region from GaP (2003) (207)
- On the Reaction Mechanism of GaAs MOCVD (1983) (174)
- Semiconductor Raman laser (1980) (129)
- An Optical Waveguide with the Optimum Distribution of the Refractive Index with Reference to Waveform Distortion (1968) (123)
- Frequency-tunable high-power terahertz wave generation from GaP (2003) (115)
- THz imaging of nucleobases and cancerous tissue using a GaP THz-wave generator (2005) (105)
- Ferroelectric PVDF cladding terahertz waveguide (2003) (103)
- Blue light emission from ZnSe p‐n junctions (1985) (101)
- Nearly perfect crystal growth of III–V compounds by the temperature difference method under controlled vapour pressure (1975) (91)
- Spectral measurement of terahertz vibrations of biomolecules using a GaP terahertz-wave generator with automatic scanning control (2003) (90)
- Low-threshold semiconductor Raman laser (1983) (82)
- Mechanism of surface reaction in GaAs layer growth (1987) (78)
- Photostimulated molecular layer epitaxy (1986) (77)
- Nonstoichiometry of Te-Doped GaAs (1974) (76)
- High-frequency high-power static induction transistor (1978) (74)
- Growth kinetic study in GaAs molecular layer epitaxy in TMG/AsH3 system (1988) (69)
- Frequency-tunable terahertz wave generation via excitation of phonon-polaritons in GaP (2003) (69)
- Low-frequency vibrational modes of riboflavin and related compounds (2005) (68)
- Molecular layer epitaxy of silicon (1990) (67)
- Gas-phase nucleation during the thermal decomposition of silane in hydrogen (1976) (64)
- Liquid phase epitaxy of GaP by a temperature difference method under controlled vapor pressure (1975) (63)
- Silicon molecular layer epitaxy (1990) (62)
- Characteristics of static induction transistors: Effects of series resistance (1978) (60)
- Epitaxial Growth with Light Irradiation (1968) (58)
- THz transmittance measurements of nucleobases and related molecules in the 0.4- to 5.8-THz region using a GaP THz wave generator (2005) (57)
- Minority‐carrier lifetime measurements of efficient GaAlAs p‐n heterojunctions (1977) (56)
- GaP THz wave generator and THz spectrometer using Cr:Forsterite lasers (2005) (53)
- Analysis of static characteristics of a bipolar-mode SIT (BSIT) (1982) (52)
- p-type conduction in ZnSe grown by temperature difference method under controlled vapor pressure (1986) (52)
- Properties of Sn-doped GaAs (1973) (52)
- Auger Characterization of Chemically Etched GaAs Surfaces (1977) (50)
- Continuous-Wave Frequency-Tunable Terahertz-Wave Generation From GaP (2006) (49)
- Characteristics of terahertz-wave generation from GaSe crystals (2004) (48)
- Stoichiometry of III-V compounds (1994) (46)
- Terahertz spectroscopy and solid-state density functional theory calculation of anthracene: effect of dispersion force on the vibrational modes. (2014) (46)
- STOICHIOMETRY-DEPENDENT DEEP LEVELS IN P-TYPE INP (1990) (45)
- Deposition Mechanism of GaAs Epitaxy (1987) (44)
- Quantitative evaluation of mefenamic acid polymorphs by terahertz-chemometrics. (2010) (43)
- Silicon epitaxial growth (1972) (43)
- GaAs TUNNETT Diodes (1978) (42)
- Mechanism of chemical vapor deposition of silicon (1978) (41)
- Impedance characteristics of double-hetero structure laser diodes (1979) (41)
- Analysis of vibrational spectra of solid-state adenine and adenosine in the terahertz region (2014) (40)
- A low-loss high-speed switching device: The 2500-V 300-A static induction thyristor (1985) (40)
- Ultrashallow, high doping of boron using molecular layer doping (1990) (40)
- Growth of Low Dislocation Density GaAs by As Pressure‐Controlled Czochralski Method (1984) (39)
- Gallium arsenide thin films by low‐temperature photochemical processes (1987) (39)
- Experimental study on current gain of BSIT (1986) (37)
- Ballistic and tunneling GaAs static induction transistors: nano-devices for THz electronics (2002) (34)
- Defect-free nucleation of silicon on {111} silicon surfaces (1974) (33)
- 240-325-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy (2003) (33)
- Anomalous Diffusion of Phosphorus into Silicon (1970) (33)
- 706-GHz GaAs CW fundamental-mode TUNNETT diodes fabricated with molecular layer epitaxy (2008) (32)
- Annealing of N-Type GaAs under Excess Arsenic Vapor (1969) (30)
- Doping in Molecular Layer Epitaxy (1989) (30)
- GENERAL PHYSICS: Nuclear, Atomic, and Molecular (PACS 01-361 2315 Depolarization effects in the active remote sensing of random media (1980) (30)
- Investigation of the interstitial site in As+-ion-implanted GaAs by means of a multidirectional and high-depth resolution RBS/channelling technique (1986) (30)
- A comparative study of THz spectra (2005) (29)
- Semiconductor Raman lasers (1994) (29)
- Layer growth in silicon epitaxy (1972) (28)
- The 2.45 GHz 36 W CW Si recessed gate type SIT with high gain and high voltage operation (2000) (27)
- Mode assignment of vibrational bands of 2-furoic acid in the terahertz frequency region (2010) (27)
- High-resolution GaP Terahertz Spectrometer and Its Application to Detect Defects in Gamma-irradiated Glucose Crystal (2008) (26)
- Terahertz-wave generation by GaP rib waveguides via collinear phase-matched difference-frequency mixing of near-infrared lasers (2009) (26)
- Terahertz-wave spectroscopy for precise histopathological imaging of tumor and non-tumor lesions in paraffin sections. (2011) (26)
- Amplitude modulation of diode laser light in millimeter-wave region (1968) (25)
- Efficiency of GaAlAs heterostructure red light‐emitting diodes (1983) (25)
- THz Generation From GaP Rod-Type Waveguides (2007) (25)
- Bipolar mode static induction transistor (BSIT)—High speed switching device (1978) (24)
- Investigation of passivation mechanism in silicon surfaces by electron spin resonance (1973) (24)
- SIT Image sensor: Design considerations and characteristics (1986) (24)
- Ideal static induction transistor implemented with molecular layer epitaxy (1994) (24)
- Static induction transistor image sensors (1979) (23)
- Characterization of Poly-Amorphous Indomethacin by Terahertz Spectroscopy (2012) (23)
- Submillimeter Wave Oscillation from GaAs Tunnett Diode (1979) (23)
- Semiconductor Raman amplifier for terahertz bandwidth optical communication (2002) (22)
- Perfect Crystal Growth of Silicon by Vapor Deposition (1975) (22)
- Raman gain and optical loss in GaP–AlGaP waveguides (2000) (22)
- Auger Analysis of Thermally Oxidized GaAs Surfaces (1977) (22)
- Anisotropy in the growth rates of silicon deposited by reduction of silicon tetrachloride (1975) (21)
- Photoexcitation Effects on the Growth Rate in the Vapor Phase Epitaxial Growth of GaAs (1985) (21)
- Alloy-diffused variable capacitance diode with large figure-of-merit (1961) (21)
- Kinetics of an Optical Wave Packet in a Lens‐like Medium (1967) (21)
- Photon Enhancement of Decomposition of AsH3 and TMG (1987) (21)
- Bipolar Mode Static Induction Transistor (1980) (20)
- Layer growth in GaAs epitaxy (1986) (20)
- Growth and electrical properties of PbTe bulk crystals grown by the Bridgman method under controlled tellurium or lead vapor pressure (1996) (20)
- Optimization of low temperature surface treatment of GaAs crystal (1996) (20)
- Deep levels in GaP (1973) (19)
- Terahertz dichroism of MBBA liquid crystal on rubbed substrate (2006) (19)
- Stoichiometry control for growth of III–V crystals (1990) (19)
- Balance Method for Experiments under Controlled Vapor Pressure (1980) (19)
- Very High Speed Static Induction Thyristor (1986) (19)
- Low Temperature Oxidation of Silicon Studied by Photosensitive ESR and Auger Electron Spectroscopy (1976) (19)
- Electrical characterization of Si-donor-related shallow and deep states in InGaAlP alloys grown by metalorganic chemical vapor deposition (1991) (19)
- Fabrication and characteristics of tapered waveguide semiconductor Raman lasers (1996) (19)
- Frequency Stabilized GaP Continuous-Wave Terahertz Signal Generator for High-Resolution Spectroscopy (2014) (19)
- Injection-induced modulation of laser light by the interaction of laser diodes (1975) (19)
- Enhancement of CW THz Wave Power Under Noncollinear Phase-Matching Conditions in Difference Frequency Generation (2009) (18)
- Molecular layer epitaxy of GaAs (1993) (18)
- Mechanism of crystal growth in the SiCl4-H2 system (1974) (18)
- Selective MLE growth of GaAs and surface treatment for ideal static induction transistor (ISIT) application (1994) (18)
- Observation of Nucleus Centers on Solution‐Grown Germanium Epitaxial Layers (1971) (18)
- Widely Frequency-Tunable Terahertz Wave Generation and Spectroscopic Application (2004) (18)
- The Lattice Misfit and Its Compensation in the Si‐Epitaxial Layer by Doping with Germanium and Carbon (1975) (18)
- Aspects of point defects in coherent terahertz-wave spectroscopy (2007) (17)
- Excitation photocapacitance study of EL2 in n-GaAs prepared by annealing under different arsenic vapor pressures (2005) (17)
- Propagation loss in a distributed beam waveguide (1965) (17)
- In situ observation of plasmas for dry etching by IR spectroscopy and probe methods (1982) (17)
- Bright Pure Green Emission from N-free GaP LED's (1980) (17)
- Low-loss high-speed switching devices, 2300-V 150-A static induction thyristor (1985) (17)
- Solid‐state self‐focusing surface waveguide (microguide) (1972) (16)
- Radiative recombination mechanisms in stoichiometry‐controlled GaP crystals (1990) (16)
- Deep Levels Studies of N-Free and N-Doped GaP Grown by TDM-CVP (1980) (16)
- (Invited) Recent Progress and Potential of SIT (1980) (15)
- Terahertz-wave absorption in GaP crystals with different carrier densities (2008) (15)
- Paramagnetic Resonance and Hall Coefficients in Fe‐Doped n‐Type GaP (1972) (15)
- Application of low-temperature area-selective regrowth for ultrashallow sidewall GaAs tunnel junctions (2002) (15)
- Spontaneous Raman scattering in [100], [110], and [11-2] directional GaP waveguides (2001) (15)
- Simple structured PMOSFET fabricated using molecular layer doping (1990) (15)
- Controlled vapor-pressure heat-treatment effect on deep levels in liquid-encapsulated czochralski-grown GaP crystals (2002) (14)
- Silicon alloy-diffused variable capacitance diode (1963) (14)
- Surface reaction of trimethylgallium on GaAs (1996) (14)
- Raman amplification in GaP-AlxGa1-xP waveguides for light frequency discrimination (1998) (14)
- Development of THz wave oscillation and its application to molecular sciences (2004) (14)
- Vibrational Mode Assignment in the Terahertz Frequency Region by Isotope Shift : Anthracene in Solid State (2013) (14)
- Liquid-phase epitaxy of GaSe and potential application for wide frequency-tunable coherent terahertz-wave generation (2008) (14)
- Heat treatment of gallium phosphide (1974) (13)
- Potential, field and carrier distribution in the channel of junction field-effect transistors (1970) (13)
- Contactless Measurement of Resistivity of Slices of Semiconductor Materials (1967) (13)
- Recombination lifetime in a semiconductor laser diode (1968) (13)
- Invited: Future Trend of Static Induction Transistor and Its Application for Integrated Circuits (1976) (13)
- A double-gate-type static-induction thyristor (1987) (13)
- Surface Orientation Effect of the Shadow of the Stacking Fault (1969) (13)
- Growth of In1-xGaxP Crystals from Solution (1971) (12)
- Growth and electrical properties of PbTe epitaxial layers grown by temperature difference method under controlled vapor pressure liquid phase epitaxy (1996) (12)
- Electroluminescence and lasing properties of highly Bi-doped PbTe epitaxial layers grown by temperature difference method under controlled vapor pressure (2003) (12)
- Reaction Mechanism of GaAs Vapor‐Phase Epitaxy (1986) (12)
- Photocapacitance study of deep levels due to nonstoichiometry in nitrogen‐free GaP light‐emitting diodes (1982) (12)
- Observation of anisotropic initial growth nucleation in liquid phase epitaxy of InP (2001) (12)
- Characteristics of time-gated raman amplification in GaP-AlGaP semiconductor waveguides (2003) (12)
- Coherent terahertz-wave generation from semiconductors and its applications in biological sciences (2008) (12)
- Effects of gate structure on static induction thyristor (1980) (12)
- Silicon vapor phase epitaxy (1982) (12)
- FREQUENCY-TUNABLE TERAHERTZ-WAVE GENERATION FROM GaP USING Cr:FORSTERITE LASERS (2005) (12)
- Screw‐Type Nucleus Centers in Silicon Epitaxial Growth (1971) (12)
- Turn-on Mechanism of a Microplasma (1968) (12)
- Millimeter Wave Oscillations from Tunnett Diodes (1974) (12)
- Observations of defects in LPE GaAs revealed by new chemical etchant (1979) (12)
- GaAs p+-n+-i(υ)-n+ Tunnett Diode (1980) (12)
- Characteristics of New Thyristors (1976) (11)
- Bulk oscillation by tunnel injection (1969) (11)
- Lasing properties of PbSnTe/PbTe double hetero mid-infrared laser diodes grown by temperature difference method under controlled vapor pressure liquid-phase epitaxy (2014) (11)
- Stoichiometry‐dependent deep levels in p‐GaAs prepared by annealing under excess arsenic vapor pressure (1991) (11)
- Stoichiometry‐dependent deep levels in n‐type InP prepared by annealing under controlled phosphorus vapor pressure (1996) (11)
- High speed and high density static induction transistor memory (1978) (11)
- Current amplification in nonhomogeneous‐base structure and static induction transistor structure (1985) (11)
- Self-limiting growth of GaAs with doping by molecular layer epitaxy using triethyl-gallium and AsH3 (2002) (11)
- Approaches to high performance SITL (1979) (11)
- Integrated logic - Static induction transistor logic (1977) (11)
- A design method for variable-capacitance diodes with an m-th power characteristic for a wide voltage range (1966) (11)
- Normally-off type high speed SI-Thyristor (1982) (11)
- Lateral optical confinement of the heterostructure semiconductor Raman laser (1987) (11)
- Temperature synchronized molecular layer epitaxy (1994) (11)
- EFFECTS OF ROUGHENING CLEAVED SURFACES ON THE CHARACTERISTICS OF GaAs INJECTION LASER DIODES (1965) (10)
- Static Induction Logic-A Simple Structure with Very Low Switching Energy and Very High Packing Density (1976) (10)
- Over 55kV//spl mu/s, dv/dt turn-off characteristics of 4kV-static induction thyristor for pulsed power applications (2004) (10)
- Growth and crystal properties of Tl-doped PbTe crystals grown by Bridgman method under Pb and Te vapor pressure (2001) (10)
- Low loss high gain 300 V-200 A class normally-off SIT module for DC motor control (1988) (10)
- Current-voltage characteristics and noise performance of a static induction transistor for video frequency (1988) (10)
- Electrical activation of Te and Se in GaAs at extremely heavy doping up to 5×1020cm−3 prepared by intermittent injection of TEG/AsH3 in ultra-high vacuum (2000) (10)
- Photosensitive Paramagnetic Resonance in Fe-Doped Gallium Phosphide (1969) (10)
- Compositional Dependence of Hardness in ZnSe1-xTex and BeyZn1-ySe1-xTex (2000) (10)
- Growth of Pb1-xSnxTe (x 0.12) epitaxial layers by temperature difference under controlled vapor pressure liquid-phase epitaxy (2000) (10)
- On structural impact of lamp annealing in device back-end processing (1986) (10)
- Stoichiometry control and point defects in compound semiconductors (2000) (10)
- 290-393 GHz CW fundamental-mode oscillation from GaAs TUNNETT diode (2005) (10)
- Consequence of a defect on the terahertz spectra of L-asparagine monohydrate (2007) (10)
- Mechanism of gallium arsenide MOCVD (1990) (10)
- Measurements of Lifetime in GaAs Diodes (1967) (10)
- Enhanced impurity incorporation by alternate Te and S doping in GaAs prepared by intermittent injection of triethylgallium and arsine in ultra high vacuum (2002) (10)
- Mid-infrared photoconductive properties of heavily Bi-doped PbTe p–n homojunction diode grown by liquid-phase epitaxy (2014) (10)
- The GaAs TUNNETT Diodes (1978) (10)
- Static Induction Transistor Logic (1977) (10)
- Buried‐heterostructure semiconductor Raman laser with threshold pump power less than 1 W (1989) (10)
- Passivation of GaAs surfaces by GaOxNy films and by multilayers (1979) (10)
- Effects of TMG/AsH3 ratio on GaAs molecular layer growth (1995) (10)
- Observation of screw dislocations in GaAs (1977) (9)
- Tapered waveguide semiconductor raman laser (1995) (9)
- Investigation of Boron Diffusion into Silicon Using a Liquid Boron Tribromide Source and Its Application to Buried-Gate-Type Static-Induction Thyristors (2005) (9)
- GaP Raman Terahertz high accuracy spectrometer and its application to detect organic and inorganic crystalline defects (2006) (9)
- Liquid phase epitaxial p-type ZnSe growth from a Se solution and fabrication of pn junctions with diffused n-type layers (1997) (9)
- Carrier injection by static induction mechanism in MLE-grown planar-doped barrier n/sup +/-i-p/sup +/-i-n/sup +/ structures (1997) (9)
- Deep levels in Te‐doped GaAs prepared by annealing under controlled arsenic vapor pressure (1991) (9)
- Site location of As+-ion-implanted GaAs by means of a multidirectional and high-depth-resolution Rutherford back-scattering/channelling technique (1986) (9)
- Observation of the solid-state formation of a TTF–CA complex by terahertz spectroscopy (2008) (9)
- Molecular layer epitaxy and its fundaments (1991) (9)
- Junction Field-Effect Devices (1982) (9)
- Photoinduced Paramagnetic Defects on Silicon Surface (1974) (9)
- A limitation of channel length in dynamic memories (1980) (9)
- Extension of frequencies from maser to laser (2009) (8)
- Semiconductor Raman laser pumped with a fundamental mode (1992) (8)
- A very high gain and a wide dynamic range static induction phototransistor (1985) (8)
- Electrons and holes in HgTe and Hg0.82Cd0.18Te with controlled deviations from stoichiometry (1975) (8)
- Two-line neuristor with active element in series and in parallel† (1969) (8)
- Frequency-Tunable Terahertz-Wave Generation from GaP Using Cr:Forsterite Lasers (2006) (8)
- The structure and maximal gain of CW-pumped GaP-AlGaP semiconductor Raman amplifier with tapers on both sides (2004) (8)
- Recent Progress and Potential of SIT (1979) (8)
- Light emission from tunnelling mode GaAs static induction transistor (1999) (8)
- Observation and control of surface reaction during Si molecular layer growth (2000) (8)
- Low-loss high speed switching device, 2500V–300A Static Induction Thyristor (1985) (8)
- Luminescence study of a deep level in N‐free GaP light‐emitting diodes (1982) (8)
- Te vapor pressure dependence of the pn junction properties of PbTe liquid phase epitaxial layers (1998) (8)
- Dislocation-free large area InP ELO layers by liquid phase epitaxy (2005) (8)
- Traveling solvent growth of ZnSe1−xTex and BeyZn1−ySe1−xTex using tellurium solution (2000) (8)
- Properties of Bi-doped PbTe layers grown by liquid phase epitaxy under controlled Te vapor pressure (2003) (8)
- Dielectric effects in the optically stimulated electron spin resonance in silicon (1977) (8)
- Correlation Field Splitting of Intramolecular Vibrations of Crystalline Tetracene in Terahertz Region (2005) (8)
- Fabrication and optical-switching results on the integrated light-triggered and quenched static induction thyristor (1986) (8)
- Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vacuum (2003) (7)
- Bipolar Mode Static Induction Transistor (BSIT) (1979) (7)
- Area-selective epitaxy and epitaxial lateral overgrowth of InP by liquid phase epitaxy on three integral axes (2002) (7)
- Surface reaction mechanism in Si and GaAs crystal growth (1992) (7)
- Avalanche induced dispersion in IMPATT diodes (1978) (7)
- Digital Etching of (001) InP Substrate by Intermittent Injection of Tertiarybutylphosphine in Ultrahigh Vacuum (1998) (7)
- Observation of Partial Dislocations of a Screw Type in Epitaxial Silicon Layers (1968) (7)
- A low impedance field effect transistor (1972) (7)
- Photocapacitance investigation of the ionized levels in n‐GaAs crystals and its association with the ‘‘photoquenching phenomenon’’ (1994) (7)
- Free exciton recombination in GaP and GaPAlxGa1 − xP layers grown by temperature difference method under controlled vapor pressure (1996) (7)
- Measurement of Hot Carrier Diffusion Constant in Semiconductors (1965) (7)
- Effects of Vapor Pressure on GaP LED's (1978) (7)
- Self-limiting growth conditions on (001) InP by alternate triethylindium and tertiarybutylphosphine supply in ultrahigh vacuum (1999) (7)
- Terahertz wave generation from GaSe crystals and effects of crystallinity (2008) (7)
- Stoichiometry of III–V compounds (1993) (7)
- Heteroepitaxy of GaP-AlxGa1−xP system by the Temperature Difference Method under Controlled Vapor Pressure (TDM-CVP) (1990) (7)
- Self-limiting growth of GaAs molecular layer epitaxy using triethyl-gallium (TEG) and AsH3 (2001) (7)
- InP single crystal growth by the horizontal Bridgman method under controlled phosphorus vapor pressure (2001) (7)
- Tunneling Spectroscopy in MS and MIS Tunnel Junctions of Degenerate n-Type Semiconductor (1975) (7)
- Fabrication and characteristics of GaP-AlGaP tapered waveguide semiconductor Raman amplifiers (2003) (7)
- The coherent interaction of externally generated 35‐GHz sound with the light in CdS (1977) (7)
- Functional integration of the light-triggered static induction thyristor and the static induction phototransistor (1986) (7)
- 60kHz, 100kW Static Induction (SI) thyristor type voltage-controlled series resonant inverter for induction heating (1987) (7)
- Semiconductor inductance diode (1960) (7)
- Area selective epitaxy of indium phosphide on silicon (100) substrates without buffer layers by liquid phase epitaxy (2007) (6)
- Fabrication and optical-switching results of the double-gate static-induction thyristor with the first planar-gate and the second buried-gate structure (1986) (6)
- High power static induction transistor (1978) (6)
- Backward and forward Raman scattering in highly efficient GaP Raman amplifier waveguides (2000) (6)
- Totally light controlled static induction thyristor (1985) (6)
- Development of TUNNETT Diode as Terahertz Device and Its Applications (2006) (6)
- Digital Etching of InP by Intermittent Injection of Trisdimethylaminophosphorus in Ultrahigh Vacuum (1999) (6)
- Monomolecular layer epitaxy of GaAs for ideal static induction transistor (1997) (6)
- Surface reaction mechanism in MOCVD (1996) (6)
- Focusing diffused waveguides (1973) (6)
- 200 GHz Tunnett Diodes (1977) (6)
- Characteristics of the epitaxial semiconductor raman laser (1986) (6)
- Lattice strain and misfit dislocation in GaAs-GaAlAsP heterojunction (1981) (6)
- Observation of the characteristic surface morphology of In1-xGaxP epitaxial layers with large lattice mismatch to the GaP substrate (1986) (6)
- Electroluminescence properties of PbTe pn junctions fabricated under controlled Te vapor pressures (1999) (6)
- Oscillation frequency control of 60 GHz-band TUNNETT diodes (2002) (6)
- Surface morphology of GaAs grown by vapor phase epitaxy (1979) (6)
- A Method to Avoid Dangers Caused by Fossil Fuels (2008) (6)
- X-ray multi-crystal diffractometry analysis of heavily Te-doped GaAs grown by intermittent injection of TEGa/AsH3 in ultra high vacuum (2000) (6)
- The operational characteristics of a static induction transistor(SIT) image sensor (1985) (6)
- Stoichiometry-dependent deep levels in Te-doped GaAs prepared by annealing under excess arsenic vapour pressure (1991) (6)
- Bright Yellow Luminescence from In1-xGaxP p-n Junctions (1972) (6)
- Sub-terahertz imaging for construction materials (2008) (6)
- Effect of stoichiometry on the dominant deep levels in liquid phase epitaxially grown n‐type Al0.3Ga0.7As doped with Te (1996) (6)
- Abnormal Impurity Distributions in High‐Purity Epitaxial Silicon Layers (1975) (6)
- ZnSe epitaxial growth by the temperature difference method under controlled vapor pressure (TDM-CVP) using Se solvent (1991) (5)
- The effect of nonstoichiometry and polarity of the (111) plane on microtwin formation in ion‐implanted GaAs (1988) (5)
- Low-loss high-power static induction thyristors for complementary circuits (1988) (5)
- Aspects of Silicon Epitaxy (1978) (5)
- CHAPTER 1 – The CW GaAs TUNNETT Diodes (1988) (5)
- PbSnTe double-hetero junction laser diode and its application to mid-infrared spectroscopic imaging (2008) (5)
- Calculation of the optimum vapor pressure for stoichiometry in PbTe and PbSnTe (2003) (5)
- U-grooved SIT CMOS technology with 3 fJ and 49 ps (7 mW, 350 fJ) operation (1990) (5)
- Ultra shallow sidewall GaAs tunnel junctions prepared by low-temperature area-selective epitaxial re-growth method (2005) (5)
- Adaptive optics instrumentation in submillimeter/terahertz spectroscopy with a flexible polyvinylidene fluoride cladding hollow waveguide. (2007) (5)
- Pioneering Work of THz Wave and Its Application for Molecular Sciences (2004) (5)
- Photoluminescence and Photocapacitance of Se Vapor-Pressure-Dependent Deep Levels in Ga-Diffused Layers Formed in p-Type ZnSe Substrates (2002) (5)
- A Cylindrical or Thin Film Waveguide with Focusing Properties at Optical Frequencies (1969) (5)
- High speed turn-on reverse conducting 4 kV static induction thyristors based on the buried gate type p-base n-emitter soft contact structure and anti-parallel diodes for solid-state power supplies in high energy accelerators (2006) (5)
- Characteristics of the high speed SI thyristor and its application as the 60kHz, 100kW and the efficiency of more than 90% inverter (1986) (5)
- CHAPTER 5 – SIT as Ballistic Device (1988) (5)
- Low-temperature deposition of Si thin layer by gas-source molecular beam epitaxy (2000) (5)
- Recent Progress in Low Temperature Photochemical Processes (1984) (5)
- Surface reactions and kinetic phenomena in molecular layer epitaxy of III–V semiconductor compounds (1997) (5)
- Self-limiting growth of InP by alternate trimethylindium and tertiarybutylphosphine supply in ultrahigh vacuum (1999) (5)
- ZnSe horizontal traveling solvent growth using selenium solution (2000) (5)
- Photoresponse of the Paramagnetic Resonance Signals of Fe in GaP (1969) (5)
- In1−xGaxP Bulk crystal growth and In1−xGaxPepitaxial growth on In1−xGaxP substrate by the temperature difference method under controlled vapor pressure (1986) (4)
- Semiconductor Raman laser with resonator film transparent to pump light (1991) (4)
- Investigation of Deep Levels in GaP Liquid Phase Epitaxial Layers on Substrates with Vapor Pressure Heat Treatment (1999) (4)
- Low-temperature deposition of SiO2 films using plasma-enhanced oxygen with reduction of oxygen-originated damage (2003) (4)
- Effects of AsH3 Surface Treatment for the Improvement of Ultrashallow Area-Selective Regrown GaAs Sidewall Tunnel Junction (2004) (4)
- Neuristor propagation in low impedance line (1970) (4)
- Terahertz vibrational spectra of metallocene (2006) (4)
- Se and Zn vapor pressure control in ZnSe single crystal growth by the sublimation method (2000) (4)
- Dislocation densities in InP single crystals grown under controlled phosphorus vapor pressure by the horizontal Bridgman method (2000) (4)
- Terahertz Wave Generation from GaP with Continuous Wave and Pulse Pumping in the 1–1.2 μm Region (2007) (4)
- In Situ Analyses of Photoexcitation Effects on GaCl3 (1987) (4)
- A very high sensitivity and very high speed light triggered and light quenched static induction thyristor (LTQSIThy) (1984) (4)
- Selective epitaxy of InP on Si(1 0 0) substrates prepared by liquid-phase epitaxy (2008) (4)
- Properties of Bi-doped PbTe epitaxial layers and pn junction diodes grown by TDM-CVP (2003) (4)
- Reaction mechanisms of mono-molecular layer growth using chemical adsorption (1996) (4)
- Comparative study of In/CdTe/Au Schottky- and p–n junction-diode detectors formed by backside laser irradiation doping (2021) (4)
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- Low-Temperature Formation of Thin-Gate SiO_2 Films by the Ultrahigh-Vacuum Chemical Vapor Deposition with Reduced Subcutaneous Oxidation Using Remote-Plasma-Activated Oxygen and Si_2H_6 : Surfaces, Interfaces, and Films (2001) (0)
- Coherent Terahertz-wave Generation from GaP waveguides (2006) (0)
- Preparation of widegap II - VI homojunction devices by stoichiometry control (1992) (0)
- High Speed Performance of SIT Logic (1979) (0)
- Compositional transition layers in heterostructure (1983) (0)
- The edge emitting semiconductor laser (1983) (0)
- Stimulated Raman gain spectroscopy of solutions by nanosecond pulsed and CW probe IR laser (2004) (0)
- Contributors, Dec. 1978 (1978) (0)
- Distributed-constant theory of the junction transistor (1959) (0)
- Compensation Effect of GaAs Junction Lasers (1968) (0)
- Development of the High-Resolution Scintillator Type Imager Using Si GRID Structures (2019) (0)
- Semiconductor devices for communication and broadcasting. (1990) (0)
- CsI:Tl scintillator detector into Si-MEMS grids (2016) (0)
- Nonstoichiometry of Compound Semiconductors (1976) (0)
- Light-emitting diode display arrangement (1979) (0)
- Self-limiting etching prior to self-limiting growth in ultra-high vacuum for obtaining clean interface (2001) (0)
- Atomic Layer Epitaxy (2001) (0)
- Persistent Photoconductivity of Low Temperature Grown AlGaAs Prepared by Intermittent Injection of (CH3)3Al/ (CH3)3Ga/AsH3. (2000) (0)
- GaP Raman Terahertz (GRT) Spectrometer using High Resolution Cr:forsterite Lasers (2006) (0)
- The semiconductor photodetector and method of operation (1984) (0)
- Development of terahertz electromagnetic wave generation based on nanometer films with atomic accuracy (2004) (0)
- CHARACTERISTICS OF STATIC INDUCTION (SI) THYRISTOR AT LIQUID NITROGEN (LN₂) TEMPERATURE (1989) (0)
- New method for thin film technology of Si and SiO2 using for tera-Hz transistor (2002) (0)
- Solid-photographing converter (1983) (0)
- Contents of Non-Radiative Deep Levels and its Relation to Crystallographic Quality (1977) (0)
- Science and Technology in 21st Century (1993) (0)
- Adsorbed Layers in the Process of Chemical Vapor Deposition (1991) (0)
- Molecular layer epitaxy for future devices (2000) (0)
- 半導体工学より見た結晶成長;半導体工学より見た結晶成長;Some Aspects about Crystal Growth on the Standpoint of Semiconductor Engineering (1979) (0)
- Future of Non-ferrous Metallurgy: Trends in the Development of Electronic Materials and Proposals to Non-ferrous Metallurgy@@@これからのエレクトロニクス材料と非鉄技術者への提言 (1988) (0)
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