Karl Hess
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Most Influential Person Now
Austrian physicist
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Physics
Karl Hess 's Degrees
- PhD Physics University of Vienna
Why Is Karl Hess Influential?
(Suggest an Edit or Addition)According to Wikipedia, Karl Hess is the Swanlund Professor Emeritus in the Department of Electrical and Computer Engineering at the University of Illinois at Urbana–Champaign . He helped to establish the Beckman Institute for Advanced Science and Technology at UIUC.
Karl Hess 's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Disorder of an AlAs‐GaAs superlattice by impurity diffusion (1981) (542)
- Theory for a quantum modulated transistor (1989) (307)
- Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing (1996) (303)
- Monte Carlo Device Simulation: Full Band and Beyond (1991) (284)
- Band-structure-dependent transport and impact ionization in GaAs (1981) (274)
- Negative differential resistance through real‐space electron transfer (1979) (269)
- Advanced Theory of Semiconductor Devices (1999) (263)
- On the possibility of transistor action based on quantum interference phenomena (1989) (228)
- Impurity and phonon scattering in layered structures (1979) (227)
- Impact ionisation in multilayered heterojunction structures (1980) (225)
- High field transport in GaAs, InP and InAs (1984) (222)
- Electric field enhanced emission from non‐Coulombic traps in semiconductors (1981) (204)
- Simulation of carrier transport and nonlinearities in quantum-well laser diodes (1998) (197)
- Impact ionization of electrons in silicon (steady state) (1983) (183)
- High purity GaAs prepared from trimethylgallium and arsine (1981) (171)
- Thresholds of impact ionization in semiconductors (1992) (169)
- Giant isotope effect in hot electron degradation of metal oxide silicon devices (1998) (136)
- Experimental determination of impact ionization coefficients in (1983) (132)
- Remote polar phonon scattering in silicon inversion layers (1979) (112)
- Theory of high-field transport of holes in GaAs and InP (1984) (105)
- Tunneling through ultrathin SiO2 gate oxides from microscopic models (2001) (102)
- Temperature dependence of threshold current for quantum‐well AlxGa1−xAs‐GaAs heterostructure laser diodes (1980) (101)
- Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability (1997) (84)
- Nonlocal and nonlinear transport in semiconductors: Real-space transfer effects (1995) (83)
- Reliability scaling issues for nanoscale devices (2003) (82)
- Two-dimensional transient simulation of an idealized high electron mobility transistor (1985) (80)
- New ultrafast switching mechanism in semiconductor heterostructures (1986) (75)
- Theory of hot electron emission from silicon into silicon dioxide (1983) (72)
- Coupled Monte Carlo-drift diffusion analysis of hot-electron effects in MOSFETs (1989) (72)
- A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport silicon (1994) (72)
- Temperature dependence of threshold current for a quantum-well heterostructure laser (1980) (72)
- Calculation of the electron velocity distribution in high electron mobility transistors using an ensemble Monte Carlo method (1985) (67)
- Monte Carlo simulation of impact ionization in GaAs including quantum effects (1983) (65)
- Theory of the velocity-field relation in AlGaAs (1988) (64)
- Alloy clustering in AlxGa1-xAs-GaAs quantum-well heterostructures (1980) (63)
- Monte Carlo simulation of real‐space electron transfer in GaAs‐AlGaAs heterostructures (1980) (63)
- Impact ionization across the conduction‐band‐edge discontinuity of quantum‐well heterostructures (1986) (63)
- Revisiting the analytic theory of p-n junction impedance: improvements guided by computer simulation leading to a new equivalent circuit (1999) (63)
- Measurements of hot-electron conduction and real-space transfer in GaAs-AlxGa1-xAs heterojunction layers (1981) (62)
- Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers (2005) (60)
- Phonon‐assisted recombination and stimulated emission in quantum‐well AlxGa1−xAs‐GaAs heterostructures (1980) (59)
- The dynamics of electron‐hole collection in quantum well heterostructures (1982) (59)
- Temperature dependence of electrical and optical modulation responses of quantum-well lasers (1999) (57)
- Physics of real‐space transfer transistors (1989) (57)
- Simulation of electronic properties and capacitance of quantum dots (1995) (57)
- Theory and applications of near ballistic transport in semiconductors (1988) (57)
- Ballistic electron transport in semiconductors (1981) (56)
- MOSFET degradation kinetics and its simulation (2003) (54)
- Hot carriers in silicon surface inversion layers (1974) (54)
- Demonstration of a new oscillator based on real‐space transfer in heterojunctions (1982) (54)
- Investigation of transient electronic transport in GaAs following high energy injection (1982) (53)
- Impurity induced disordering of strained GaP‐GaAs1−xPx(x∼0.6) superlattices (1983) (53)
- Transient capacitance spectroscopy on large quantum well heterostructures (1983) (51)
- Theory of channel hot-carrier degradation in MOSFETs (1999) (48)
- Magnitude of the threshold energy for hot electron damage in metal–oxide–semiconductor field effect transistors by hydrogen desorption (1999) (47)
- Real-space electron transfer by thermionic emission in GaAsAlxGa1−xAs heterostructures: Analytical model for large layer widths (1980) (47)
- Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime (1998) (46)
- Warm and hot carriers in silicon surface-inversion layers (1974) (46)
- Experimental and theoretical electron mobility of modulation doped AlxGa1−xAs/GaAs heterostructures grown by molecular beam epitaxy (1981) (44)
- Two-dimensional numerical analysis of the high electron mobility transistor (1984) (44)
- Possibility of a metallic field-effect transistor (2004) (43)
- Field dependence of mobility in Al0.2Ga0.8As/GaAs heterojunctions at very low fields (1981) (42)
- Theory of electron impact ionization including a potential step: Application to GaAs-AlGaAs (1985) (41)
- The effects of a multiple carrier model of interface trap generation on lifetime extraction for MOSFETs (2002) (39)
- Monte Carlo calculations of electron transport in GaAs/AlGaAs superlattices (1985) (39)
- NUMERICAL SIMULATION OF SHELL-FILLING EFFECTS IN CIRCULAR QUANTUM DOTS (1997) (38)
- Real space transfer: Generalized approach to transport in confined geometries (1988) (37)
- Effects of the spatial nonuniformity of optical transverse modes on the modulation response of vertical-cavity surface-emitting lasers (2003) (37)
- Simulating the modulation response of VCSELs: the effects of diffusion capacitance and spatial hole-burning (2002) (36)
- Energie-Relaxation warmer Ladungsträger in Germanium und Silizium (1969) (36)
- Application of high pressure deuterium annealing for improving the hot carrier reliability of CMOS transistors (2000) (36)
- Absorption measurements at high pressure on AlAs‐AlxGa1−xAs‐GaAs superlattices (1982) (35)
- An analytical evaluation of GaAs grown with commercial and repurified trimethylgallium (1982) (35)
- Electron and hole impact ionization coefficients in (100) and in (111) Si (1985) (35)
- Numerical simulation of vertical cavity surface emitting lasers. (1998) (33)
- Calculation of warm electron transport in AlGaAs/GaAs single heterostructures using a Monte Carlo method (1986) (33)
- Monte Carlo simulation of hot electron transport in Si using a unified pseudopotential description of the crystal (1992) (32)
- Phonon-assisted recombination and stimulated emission in multiple quantum-well Mo-CVD AlxGa1-xAs-GaAs heterostructures (Lz∽50Å, E1-1' -2× h̵ωLO⪅h̵ω (1979) (32)
- Momentum and energy relaxation of warm carriers in semiconductors (1970) (31)
- High energy AlxGa1−xAs (0⩽x⩽0.1) quantum‐well heterostructure laser operation (1982) (31)
- Scaling properties of high electron mobility transistors (1986) (30)
- Severe gain suppression due to dynamic carrier heating in quantum well lasers (1997) (30)
- Self-consistent Green’s function approach to the analysis of dielectrically apertured vertical-cavity surface-emitting lasers (1998) (30)
- Transient electronic transport in InP under the condition of high-energy electron injection (1983) (30)
- Ultrahigh vacuum–scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: implications for complementary metal oxide semiconductor technology (1998) (29)
- The exciton in recombination in AlxGa1−xAs-GaAs quantum-well heterostructures (1980) (29)
- Numerical simulation of mesoscopic systems with open boundaries using the multidimensional time‐dependent Schrödinger equation (1991) (29)
- Improvement of hot carrier reliability with deuterium anneals for manufacturing multilevel metal/dielectric MOS systems (1998) (28)
- The physics of determining chip reliability (2001) (28)
- Monte Carlo modeling of femtosecond relaxation processes in AlGaAs/GaAs quantum wells (1988) (26)
- Approaching the quantum limit (1992) (26)
- The use of in situ laser interferometry for MOCVD process control (1998) (26)
- Fast switching and storage in GaAs—AlxGa1-xAs heterojunction layers (1982) (26)
- Wide-band modulation of 1.3 mu m InGaAsP buried crescent lasers with iron- and cobalt-doped semi-insulating current blocking layers (1989) (25)
- Theoretical and experimental analysis of the switching mechanism in heterostructure hot-electron diodes (1987) (25)
- Room‐temperature switching and negative differential resistance in the heterostructure hot‐electron diode (1988) (25)
- Simulation of high‐field transport in GaAs using a Monte Carlo method and pseudopotential band structures (1981) (24)
- Non−Ohmic electron conduction in silicon surface inversion layers at low temperatures (1975) (24)
- Current Transport in Modulation-Doped AlxGa1-xAs/GaAs Heterojunction Structures at Moderate Field Strengths (1982) (24)
- Physics of the enhancement of impact ionization in multiquantum well structures (1987) (24)
- Theoretical analysis of gain saturation coefficients in InGaAs/AlGaAs strained layer quantum well lasers (1992) (24)
- Integrated safety system for MOCVD laboratory (1986) (23)
- Theoretical and experimental investigation of the dynamics of pulsed laser annealing of amorphous silicon (1981) (23)
- Induced phonon‐sideband laser operation of large‐quantum‐well AlxGa1−xAs‐GaAs heterostructures (Lz ∼200–500 Å) (1980) (23)
- Theory of resonant scattering in semiconductors due to impurity central‐cell potentials (1982) (23)
- Nonlocality of the electron ionization coefficient in n-MOSFETs: an analytic approach (1988) (22)
- Semi-insulating InP grown by low pressure MOCVD (1987) (22)
- Electron transport in heterostructure hot‐electron diodes (1988) (22)
- A Multi-Carrier Model for Interface Trap Generation (2002) (21)
- First-principles Monte Carlo simulation of transport in Si (1994) (21)
- A simple model for the index of refraction of GaAs–AlAs superlattices and heterostructure layers: Contributions of the states around Γ (1983) (21)
- Phenomenological Physics of Hot Carriers in Semiconductors (1980) (21)
- Secondary ion mass spectroscopy characterization of the deuterium sintering process for enhanced-lifetime complementary metal-oxide-semiconductor transistors (1998) (20)
- Review of experimental aspects of hot electron transport in MOS structures (1978) (20)
- Index of refraction of AlAs‐GaAs superlattices (1983) (20)
- Impact ionization: beyond the Golden Rule (1992) (20)
- Computational electronics : semiconductor transport and device simulation (1991) (20)
- High‐speed and high‐power 1.3‐μm InGaAsP buried crescent injection lasers with semi‐insulating current blocking layers (1987) (20)
- Hot electrons in layered semiconductors (1980) (20)
- A carrier temperature model simulation of a double-drift IMPATT diode (1981) (19)
- Monte Carlo simulations of hot‐electron spectroscopy in planar‐doped barrier transistors (1986) (19)
- Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructures (1980) (19)
- Hot-carrier effects in high magnetic fields in silicon inversion layers at low temperatures:pchannel (1977) (19)
- Ensemble Monte Carlo simulations of femtosecond energy relaxation of photoexcited electrons in bulk GaAs (1988) (18)
- Tunneling‐assisted impact ionization for a superlattice (1987) (18)
- Analytical theory of semiconductor p-n junctions and the transition between depletion and quasineutral region (2000) (18)
- Continuous room‐temperature photopumped laser operation of modulation‐doped AlxGa1−xAs/GaAs superlattices (1981) (18)
- Ensemble Monte Carlo Simulation of a Velocity-Modulation Field Effect Transistor (VMT) (1987) (18)
- Simulations of electron impact ionization rate in GaAs in nonuniform electric fields (1986) (18)
- Effect of background doping on the electron mobility of (Al,Ga)As/GaAs heterostructures (1981) (18)
- Simulation of carrier capture in semiconductor quantum wells: Bridging the gap from quantum to classical transport (1997) (18)
- Hot electrons in short-gate charge-coupled devices (1978) (17)
- Time dependence of current at high electric fields in AlxGa1-xAs-GaAs heterojunction layers (1981) (17)
- Stimulated emission in a degenerately doped GaAs quantum well (1982) (17)
- Low threshold photopumped AlxGa1−xAs quantum‐well heterostructure lasers (1983) (17)
- Simplified device equations and transport coefficients for GaAs device modeling (1987) (17)
- Ab initio study of semiconducting carbon nanotubes adsorbed on the Si(100) surface: Diameter- and registration-dependent atomic configurations and electronic properties (2005) (17)
- A full-band Monte Carlo model for silicon nanoscale devices with a quantum mechanical correction of the potential (2000) (17)
- High pressure measurements on AlxGa1−xAs‐GaAs (x = 0.5 and 1) superlattices and quantum well heterostructure lasers (1982) (17)
- Absorption, stimulated emission, and clustering in AlAs‐AlxGa1−xAs‐GaAs superlattices (1981) (17)
- Hall effect and mobility in heterojunction layers (1982) (16)
- Aspects of High-Field Transport in Semiconductor Heterolayers and Semiconductor Devices (1982) (16)
- Two-dimensional simulation of quantum well lasers (1990) (16)
- A theory of enhanced impact ionization due to the gate field and mobility degradation in the inversion layer of MOSFET's (1986) (16)
- Barrier height fluctuations in very small devices due to the discreteness of the dopants (1987) (15)
- Free excitons in InP in high magnetic fields (1977) (15)
- Many-Body Terms in van der Waals Cohesion Energy of Nanotubes (2002) (15)
- Theory of steady‐state high‐field hole transport in GaSb and AlxGa1−xSb: The impact ionization resonance (1985) (15)
- Clustering in molecular‐beam epitaxial AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers (1981) (15)
- The effects of V/III ratio and growth temperature on the electrical and optical properties of InP grown by low-pressure metalorganic chemical vapor deposition (1984) (15)
- Low‐threshold and wide‐bandwidth 1.3 μm InGaAsP buried crescent injection lasers with semi‐insulating current confinement layers (1987) (15)
- Effect of localized vibrations on the Si surface concentrations of H and D (1998) (15)
- Energy relaxation of warm holes in p-type tellurium (1969) (15)
- Hot Carriers in Semiconductors (2011) (15)
- Effect of carrier charge imbalance on the threshold current in diode lasers with thin intrinsic quantum wells (1994) (14)
- Numerical simulation of wide band‐gap AlGaN/InGaN light‐emitting diodes for output power characteristics and emission spectra (1996) (14)
- Quenching of stimulated phonon emission in AlxGa1−xAs-GaAs quantum-well heterostructures (1981) (14)
- Alloy clustering and its effect on impact ionization in ternary III–V compounds (1982) (14)
- Theoretical and experimental investigations of the heterostructure hot electron diode (1988) (14)
- Comment on the use of the electron temperature concept for nonlinear transport problems in semiconductor p-n junctions (1986) (14)
- Electron transfer between adjacent channels simulated by ensemble Monte Carlo methods (1987) (14)
- Calculation of hot electron distributions in silicon by means of an evolutionary algorithm (1996) (14)
- Deep-level transient spectroscopy studies of defects in GaAs-AlGaAs superlattices (1986) (14)
- Diffusion capacitance and laser diodes (2004) (13)
- Effective-mass enhancement and nonparabolicity in thin GaAs quantum wells (2000) (13)
- Time‐dependent ensemble Monte Carlo simulation for planar‐doped GaAs structures (1985) (13)
- Simulation of biological ionic channels by technology computer-aided design (2000) (13)
- Resonant electron tunneling through defects in ultrathin SiO2 gate oxides in MOSFETs (2002) (13)
- Monte Carlo Investigation of Transient Hole Transport in GaAs (1984) (13)
- Piezo-Urbach rule for acoustoelectric domains in GaAs (1974) (13)
- Nonlinear electronic transport and device performance of HEMTs (2001) (13)
- Ensemble Monte Carlo simulation of real space transfer (NERFET/CHINT) devices (1988) (12)
- Theory of high‐field transport of holes in Al0.45Ga0.55As (1986) (12)
- Phonon contribution to metalorganic chemical vapor deposited Alx Ga1−xAs‐GaAs quantum‐well heterostructure laser operation (1981) (12)
- Harmonic mixing and energy relaxation of warm electrons in n-GaAs at low temperatures (1971) (12)
- BAND-STRUCTURE DEPENDENT IMPACT IONIZATION IN SILICON AND GALLIUM ARSENIDE (1981) (12)
- Energy exchange in single-particle electron-electron scattering (1999) (12)
- General model of the transverse dielectric constant of GaAs-AlAs superlattices (1985) (12)
- Simulation of Transport over Heterojunctions (2007) (12)
- The effect of deuterium passivation at different steps of CMOS processing on lifetime improvements of CMOS transistors (1999) (12)
- Deuterium post metal annealing of MOSFETs for improved hot carrier reliability (1996) (12)
- Hydrogen and hot electron defect creation at the Si(100)/SiO2interface of metal-oxide-semiconductor field effect transistors (2000) (12)
- Phonon contribution to double‐heterojunction laser operation (1980) (11)
- Two-dimensional simulator for semiconductor lasers (1989) (11)
- Deep level transient spectroscopy for diodes with large leakage currents. (1979) (11)
- Coupling the electronic and optical problems in semiconductor quantum well laser simulations (1994) (11)
- Influence of defects on elastic gate tunneling currents through ultrathin SiO2gate oxides: predictions from microscopic models (2000) (11)
- Microwave frequency operation of the heterostructure hot-electron diode (1988) (11)
- Impact ionization in InP and GaAs (1985) (11)
- Electron transport in AlGaAs/GaAs tunneling hot electron transfer amplifiers (1988) (11)
- Monte Carlo study of electron heating and enhanced thermionic emission by hot phonons in heterolayers (1988) (11)
- Phonon-enhanced Landauer resistance (1994) (11)
- Size fluctuations and high‐energy laser operation of AlxGa1−xAs‐AlAs‐GaAs quantum‐well heterostructures (1981) (11)
- An alternative interpretation of hot electron interface degradation in NMOSFETs: isotope results irreconcilable with major defect generation by holes? (1999) (11)
- Comment on "Effect of collisional broadening on Monte Carlo simulations of high-field transport in semiconductor devices" (1981) (11)
- Low threshold 1.51 μm InGaAsP buried crescent injection lasers with semi‐insulating current confinement layer (1986) (11)
- Orientation dependence of ballistic electron transport and impact ionisation (1980) (10)
- Scattering Mechanisms for Semiconductor Transport Calculations (1991) (10)
- Growth and characterization of Ga1−xInxAs by low pressure metalorganic chemical vapor deposition (1984) (10)
- A new technique to quantify deuterium passivation of interface traps in MOS devices (2001) (10)
- Dynamics of heterostructure hot‐electron diodes (1989) (10)
- Resonant tunneling in a GaAs1−xPx-GaAs strained-layer quantum-well heterostructure (1984) (10)
- Neutron transmutation doping of high‐purity InP (1987) (10)
- Lattice Temperature Model and Temperature Effects in Oxide-Confined VCSEL’s (2004) (10)
- The current-voltage characteristics of field-effect transistors with short channels (1976) (10)
- Effects of growth temperature on optical and deep level spectroscopy of high‐quality InP grown by metalorganic chemical vapor deposition (1985) (10)
- LPE HgCdTe on sapphire status and advancements (2001) (10)
- High pressure experiments on AlxGa1-xAs-GaAs quantum-well heterostructure lasers (1982) (10)
- LATERAL TRANSPORT IN SUPERLATTICES (1981) (9)
- Deformation potentials of superlattices and interfaces (1981) (9)
- Tight-binding investigation of electron tunneling through ultrathin SiO2gate oxides (2000) (9)
- Dynamic characteristics of semi-insulating current blocking layers: application to modulation performance of 1.3-μm InGaAsP lasers (1988) (9)
- New effects of structure in momentum and real space on nonlinear transport across heterojunction band discontinuities (1987) (9)
- Superconductor Images of Electron Devide Physics (1990) (9)
- Kinetic study on replacement of hydrogen by deuterium at (100)Si/SiO2 interfaces (2001) (9)
- Inclusion of Bandstructure and Many-Body Effects in a Quantum Well Laser Simulator (1998) (9)
- Deuterium passivation of interface traps in MOS devices (2001) (9)
- Ensemble Monte Carlo simulation of sub-0.1μm gate length GaAs MESFETs (1989) (9)
- Effects of band bending on real space transfer in GaAs–AlxGa1−xAs layered heterostructures (1983) (9)
- Monte Carlo simulation of Si and GaAs avalanche electron emitting diodes (1989) (9)
- Ensemble Monte Carlo simulations of femtosecond thermalization of low-energy photoexcited electrons in GaAs quantum wells (1987) (8)
- A new technique for the calculation of real-time path integrals and applications to electron transport (1987) (8)
- Ensemble Monte Carlo simulation of semiclassical nonlinear electron transport across heterojunction band discontinuities (1988) (8)
- Clustering and phonon effects in AlxGa1−xAsGaAs quantum-well heterostructure lasers grown by molecular beam epitaxy (1981) (8)
- SELF-CONSISTENT CALCULATION OF THE MODULATION RESPONSE FOR QUANTUM WELL LASER DIODES (1994) (8)
- Transient electronic transport in staircase heterostructures (1983) (8)
- Reply to ’’Comment on ’Simulation of high‐field transport in GaAs using a Monte Carlo method and pseudopotential band structures’ and on ’Band‐structure dependent transport and impact ionization in GaAs’ ’’ (1982) (8)
- Fully coupled electrical and optical simulation of VCSELs (2000) (8)
- The ultimate limits of CCD performance imposed by hot electron effects (1979) (8)
- Principles of Metallic Field Effect Transistor (METFET) (2004) (8)
- Field‐induced anisotropic distribution functions and semiconductor transport equations with tensor‐form coefficients (1990) (8)
- Electron transport in heterojunctions and superlattices (1983) (8)
- Improved algorithm for modeling collision broadening through a sequence of scattering events in semiclassical Monte Carlo (2000) (7)
- The effect of carrier capture on the modulation bandwidth of quantum well lasers (1993) (7)
- Two-dimensional transient simulation of the high electron mobility transistor (1984) (7)
- Principles of hot electron thermionic emission (real space transfer) in semicoductor heterolayers and device applications (1985) (7)
- Mechanism for hot-carrier-induced interface trap generation in MOS transistors (1999) (7)
- Monte Carlo simulation of reflecting contact behavior on ballistic device speed (1983) (7)
- Non-ohmic microwave conductivity in semiconductor posts (1969) (7)
- Improved effective index method for oxide-confined VCSEL mode analysis (2002) (7)
- Transient simulation of AlGaAs/GaAs/AlGaAs and AlGaAs/InGaAs/AlGaAs hot-electron transistors (1989) (7)
- Microwave absorption by bunched carriers in acoustoelectric domains (1973) (7)
- Resonant-wavelength control and optical-confinement analysis for graded SCH VCSELs using a self-consistent effective-index method (2003) (7)
- Simulation of a long term memory device with a full bandstructure Monte Carlo approach (1995) (7)
- Ionized impurity scattering in semiconductors: InSb doped by neutron irradiation (1976) (7)
- Ballistic electron transport across collector barriers in AlGaAs/GaAs hot‐electron transistors (1988) (7)
- Energy loss of warm and hot carriers in surface inversion layers of polar semiconductors (1976) (7)
- Single‐electron Coulomb exclusion on the atomic level (1994) (7)
- Γ-X phonon-assisted thermionic currents in the GaAs/AlxGa1-xAs interface system (1993) (7)
- Determination of the energy relaxation time in GaSb from microwave harmonic mixing and transport phenomena (1972) (6)
- Effect of uniaxial stress on energy loss and scattering mechanism in p-type silicon (1972) (6)
- Quasi-three-dimensional simulation of carrier dynamics in quantum well DFB lasers (1998) (6)
- Criteria for transistor action based on quantum interference phenomena (1989) (6)
- Deformation potentials of bulk semiconductors (1981) (6)
- Femtosecond studies of intervalley scattering in GaAs and AlXGa1−XAs (1989) (6)
- Band-structure dependence of impact ionization rate in GaAs (1986) (6)
- VIB-3 accurate analysis of impact ionization effects in submicrometer MOSFET devices (1987) (6)
- Carrier density distribution in modulation doped GaAs-AlxGa1−xAs quantum well heterostructures (1983) (6)
- Simulating spatial and spectral hole burning and the modulation response of quantum well laser diodes (1995) (6)
- The charge-handling capacity of buried-channel structures under hot-electron conditions (1980) (6)
- Boltzmann Transport Equation (1988) (6)
- The electrical turn-on characteristics of vertical-cavity surface-emitting lasers (2003) (6)
- Energy-diffusion equation for an electron gas interacting with polar optical phonons (1982) (6)
- Intersubband dynamics in modulation doped quantum wells (1989) (6)
- Stimulated emission in strained GaAs1−xPx‐GaAs1−yPy superlattices (1983) (6)
- 1.3 μm InGaAsP buried crescent lasers with cobalt‐doped semi‐insulating current blocking layers grown by metalorganic chemical vapor deposition (1988) (5)
- Resonance impact ionization in superlattices (1982) (5)
- Dipole scattering at the SiSiO2 interface (1975) (5)
- Comments on the plasma annealing model to explain the dynamics of pulsed laser annealing of ion‐implanted silicon (1982) (5)
- Calculation of high-field diffusivity by a many-particle Monte Carlo simulation including a complete band structure for GaAs (1984) (5)
- Hydrogen-related extrinsic oxide trap generation in thin gate oxide film during negative-bias temperature instability stress (2004) (5)
- Transient transport and transferred electron behavior in gallium arsenide under the condition of high-energy electron injection (1983) (5)
- Simulation of carrier capture in quantum well lasers due to strong inelastic scattering (1995) (5)
- Application of a New Multi-Scale Approach to Transport in a GaAs/AlAs Heterojunction Structure (1993) (5)
- Magnetoresistance of n-silicon inversion layers in the ohmic and in the hot-electron range (1976) (5)
- Mode development in the cadmium sulphide acousto-electric oscillator (1971) (5)
- Si‐Si pair diffusion and correlation in AlxGa1−xAs and GaAs (1985) (5)
- High field transient transport in modulation doped heterostructures (1986) (4)
- Insights into MOCVD process control as revealed by laser interferometry (1999) (4)
- An Application of the Recombination and Generation Theory by Shockley, Read and Hall to Biological Ion Channels (2005) (4)
- Hot electron diffusion in fine line semiconductor devices (1982) (4)
- Fundamental connection between hydrogen/deuterium desorption at silicon surfaces in ultrahigh vacuum and at oxide/silicon interfaces in metal–oxide–semiconductor devices (2001) (4)
- On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal–oxide–semiconductor field-effect transistors (2001) (4)
- Theoretical analysis of gain saturation coefficients in InP‐based strained‐layer quantum‐well lasers (1993) (4)
- Theory of collision broadening through a sequence of scattering events with applications to semiclassical Monte Carlo (1999) (4)
- Monte Carlo Modeling of Transient Recharging Processes in Quantum-Well Infrared Photodetectors (2000) (4)
- The Coupled Optoelectronic Problems of Quantum Well Laser Operation (1998) (4)
- Active cavity modes for VCSEL simulation (1999) (4)
- Gain Calculation in a Quantum Well Laser Simulator Using an Eight Band k.p Model (1998) (4)
- Electronic transport in semiconductors at high energy (1991) (4)
- Impact of Scaling on CMOS Chip Failure Rate, and Design Rules for Hot Carrier Reliability (2001) (4)
- Deuterium pressure dependence of characteristics and hot-carrier reliability of CMOS devices (2001) (4)
- High frequency hot electron conductivity and admittance in Si and Ge (1975) (4)
- Zipping of graphene edge as a mechanism for NT nucleation (2002) (4)
- Observation of a two‐dimensional electron gas in a GaAs1−yPy–GaAs (y=0.25) strained layer superlattice (1983) (4)
- Spectral Hole Burning and Carrier-Carrier Interaction in Semiconductor Quantum Well Lasers: A Monte Carlo Investigation (1996) (4)
- The effect of reflecting contacts on high-field transport (1987) (3)
- Hot electrons in semiconductor heterostructures and superlattices (1985) (3)
- The roles of carrier transport in determining the modulation of semiconductor quantum well lasers (1994) (3)
- Corrections to the Capacitance between Two Electrodes Due to the Presence of Quantum Confined System (1998) (3)
- Nonlinear Solution for Single-Mode Operated Acousto-Electric Oscillators (1972) (3)
- Conductance modulation of metallic carbon nanotubes by remote charged rings (2005) (3)
- Inelastic hot-electron Bloch scattering from quantum-confined systems (1989) (3)
- Laser reflectance monitoring of the nucleation and growth of CdTe on basal plane sapphire substrates for focal plane arrays (1997) (3)
- Thresholds of Impact Ionization in Semiconductors 6 (3)
- 7 – QUANTUM-WELL HETEROSTRUCTURE LASERS (1985) (3)
- Photosensitive Coulomb blockade in semiconductor p‐n tunnel diodes (1993) (3)
- Electron transport in GaAs/AlxGa1−xAs heterojunctions at low temperatures (1988) (3)
- Scaling and transport properties of high electron mobility transistors (1986) (3)
- Theory and Modeling of Lasing Modes in Vertical Cavity Surface Emitting Lasers (1998) (3)
- Tunneling through Thin Oxides—New Insights from Microscopic Calculations (2002) (3)
- Addendum: “Effective-mass enhancement and nonparabolicity in thin GaAs quantum wells” [J. Appl. Phys. 88, 6945 (2000)] (2002) (3)
- High-Field Effects (1999) (2)
- Interelectronic collisions and electron-optical phonon interactions in polar semiconductors: A criterion for the electron temperature model (1983) (2)
- The engineering research center for compound semiconductor microelectronics (1993) (2)
- Non-Ohmic Phonon-Assisted Landauer Resistance (1995) (2)
- Quantum Ray Tracing: A New Approach to Quantum Transport in Mesoscopic Systems (1991) (2)
- Impurity-band tails in superlattices (1983) (2)
- Absorption measurements at high pressure (0–10kbar) on strained superlattices (1983) (2)
- MONTE CARLO SIMULATION OF HOT ELECTRONS IN SILICON P-I-N COLD CATHODES (1990) (2)
- Hydrogen-related defect creation at the Si(100)–SiO2interface of metal-oxide-semiconductor field effect transistors during hot electron stress (2000) (2)
- Wavelet based electronic structure calculations (1999) (2)
- DISORDER OF AlAs/GaAs SUPERLATTICES BY THE IMPLANTATION AND DIFFUSION OF IMPURITIES. (1983) (2)
- Fabrication of lateral superlattices using multilayer resist techniques (1992) (2)
- Theoretical analysis of gain saturation coefficients in InGaAs/AlGaAs strained layer quantum well lasers (SL-QWLs) (1992) (2)
- Energy relaxation to acoustic phonons in surface inversion layers (1978) (2)
- VIA-2 lack of orientation dependence of impact ionization coefficients in InP (1983) (2)
- High Speed 1.31µm InGaAsP Lasers With Semi-Insulating Current-Blocking Layers: Experiment And Modeling (1989) (2)
- Negative differential resistance in (100) n-channel silicon inversion layers (1978) (2)
- Multi-level metal CMOS manufacturing with deuterium for improved hot carrier reliability (1998) (2)
- Simulation of Si-MOSFETs with the Mutation Operator Monte Carlo Method (1998) (2)
- Simulating Electronic Transport in Semiconductor Nanostructures (1996) (2)
- Calculation of the high energy tail of the electron distribution in Si-MOSFETs with an evolutionary algorithm (1997) (2)
- Simulation of spontaneous emission in apertured microcavities (2000) (2)
- On the magnetoresistance of silicon surface inversion layers (1975) (2)
- Energy diffusion equation for an electron gas interacting with polar optical phonons: Non-parabolic case (1983) (2)
- Shell-Filling Effects in Circular Quantum Dots (1998) (2)
- Numerical study of 2-D Quantum Dots (1993) (2)
- A thorough study of hydrogen-related gate oxide degradation in deep submicron MOSFET's with deuterium treatment process (2006) (2)
- Hot carrier effects in conventional injection and tunneling injection quantum well laser diodes (1997) (2)
- Simulating the effect of spatial hole burning on the modulation responses of VCSELs (2002) (2)
- Trapping Noise in Charge Coupled Devices (1979) (2)
- Modeling Nano-Structure Devices (1993) (2)
- Hot‐electron magnetoresistance in n‐silicon inversion layers) (1975) (2)
- Hierarchy of Full Band Structure Models for Monte Carlo Simulation (1998) (1)
- Infrared absorption by acoustoelectric domains in ZnO (1973) (1)
- International Conference on Hot Carriers in Semiconductors (9th) Held in Chicago, Illinois on 31 July - 4 August 1995. (1996) (1)
- Erratum: Numerical simulation of mesoscopic systems with open boundaries using the multidimensional time-dependent Schrödinger equation (Journal of Applied Physics (1991) 69 (7153)) (1992) (1)
- Transient Response in Mesoscopic Devices (1991) (1)
- DYNAMICS OF ELECTRON TRANSFER BETWEEN TWO ADJACENT CHANNELS AS CALCULATED BY AN ENSEMBLE MONTE CARLO METHOD (1987) (1)
- Monte Carlo simulation of Gunn domain dynamics in power GaAs MESFETs with a recessed gate structure (1990) (1)
- Application of the deuterium sintering process to improve the device design rule in reducing plasma induced damages (1999) (1)
- Real space transfer noise in buried-channel devices (1981) (1)
- A Statistical Model for Intrinsic Failures in Nanometer Chip Technology and Use of Short-Time Tests for Reliability (2001) (1)
- POSSIBILITY OF OFF-RESONANCE LASING IN VERTICAL CAVITY SURFACE EMITTING LASERS (1995) (1)
- Surface and Interfaces in Mesoscopic Devices. (1996) (1)
- Theoretical Study of Gain Saturation Coefficients in InGaAs/InGaAsP Strained Layer Quantum Well Lasers (1993) (1)
- Effects of field fluctuation on impact ionization rates in semiconductor devices due to the discreteness and distribution of dopants (1987) (1)
- Hot-carrier-induced oxide charge trapping and interface trap creation in metal–oxide–semiconductor devices studied by hydrogen/deuterium isotope effect (2001) (1)
- Deuterium Sintering of CMOS Technology for Improved Hot Carrier Reliability (1998) (1)
- Anharmonic linewidth of absorption by localized vibrations of H and D adatoms on the surface of Si (2000) (1)
- Influence of the second harmonic on the acousto-electric gain in piezoelectric semiconductors (1971) (1)
- The self-consistent simulation of the modulation responses of quantum well lasers (1993) (1)
- Quantum well laser operation at low temperature in strong magnetic fields (1983) (1)
- Ion Channel Simulations Using the TR-PNP Model and the Excess Chemical Potential Approach (2005) (1)
- Deuterium isotope effect for AC and DC hot-carrier degradation of MOS transistors: a comparison study (2001) (1)
- Simulation of Carrier Transport and Hot Phonon Effects in Quantum Well Laser Diodes (1998) (1)
- VIB-9 high energy injection and transient electron transport in gallium arsenide (1982) (1)
- Quasi 3—D Simulation of Quantum Well DFB Lasers (1998) (1)
- Anisotropic impurity scattering in electrically quantized inversion layers (1975) (1)
- Modeling electronics at the nanoscale (2002) (1)
- A TWO-PARTICLE MODEL OF ELECTRON-ELECTRON INTERACTIONS IN QUANTUM STRUCTURES (1992) (1)
- Room at the Bottom, Plenty of Tyranny at the Top (2012) (1)
- Field Assisted Impact Ionization in Semiconductors (1991) (1)
- The effect of reflecting contacts on high field transport (1988) (1)
- High Frequency Characteristics Of 1.3 µm Lasers (1989) (0)
- Frequency dependent microwave absorption in acoustoelectric domains in ZnO (1976) (0)
- Hot electron transport in MOS structures (1978) (0)
- Simulations of nonlinear transport in AlGaAs/GaAs single well heterostructures (1988) (0)
- A Numerical Method for the Calculation of Transient Response in Mesoscopic Devices (1991) (0)
- Physics of realspace transfer transistors (2013) (0)
- VIA-1 the switching mechanism in the heterostructure hot-electron diode (1987) (0)
- High-speed 1.3-µm buried crescent injection lasers with semi-insulating current blocking layers (1988) (0)
- DEUTERIUM TREATMENT FOR IMPROVED HOT CARRIER RELIABILITY OF INTEGRATED CIRCUIT TRANSISTORS (1996) (0)
- Numerical simulation of capacitance spectroscopy for multiple vertically stacked quantum dots (2002) (0)
- Science: The Process of Understanding the Natural World and Its Possibilities (2013) (0)
- Hot Electron Effects of Importance for Micron and Submicron Devices. (1981) (0)
- Determination of the Activation Energy for Replacing Hydrogen with Deuterium at the Oxide/Silicon Interface in MOS Devices (2001) (0)
- Hot electron deep level transient spectroscopy (1985) (0)
- An application of Shockley's recombination and generation theory to biological ion channels (2004) (0)
- Ion Trapping and Release Using Computational Electronics Methods (2006) (0)
- Deuterium passivation in CMOS technology (2005) (0)
- Appendix B: The One Band Approximation (2000) (0)
- Computational, Experimental and Engineering Foundations of Ionic Channels as Miniaturized Sensors, Devices and Systems (2003) (0)
- Simulation of Electronic Transport in Semiconductor Heterolayer Devices (1992) (0)
- Superlattices and NiPi structures in new forms of cascade solar cells. Semiannual Report, 23 October 1985-22 April 1986 (1986) (0)
- Multi-Scale Approach to Semiconductor Device Simulation Combining Semi-Classical and Quantum Regions (1998) (0)
- Toward Nanotube Device Modeling (2002) (0)
- IVB-6 impact ionization coefficients in 〈100〉 and 〈111〉 silicon (1984) (0)
- Electronic Structure Calculations Using An Adaptive Wavelet Basis (1998) (0)
- I-3 nonlinear transport in submicron structures (1981) (0)
- Appendix A: Tunneling and the Golden Rule (2000) (0)
- Ensemble Monte Carlo simulation of velocity modulation transistors (VMT) and real space transfer (NERFET, CHINT) devices (1988) (0)
- A Brief Review of the Relevant Basic Equations of Physics (2000) (0)
- Non Stationary Transport in MODFET’s and Heterojuction Devices (1987) (0)
- Electronic Transport in III-V Semiconductors and their Lattice Matched Heterojunctions (1992) (0)
- Effect of low temperature deuterium annealing on plasma process induced damage (1999) (0)
- Simulations of the Gramicidin A Channel by Using the TR-PNP Model (2006) (0)
- Erratum: ‘‘Barrier height fluctuations in very small devices due to the discreteness of the dopants’’ [J. Appl. Phys. 61, 5178 (1987)] (1987) (0)
- IVA-4 high field transport in GaAs-AlxGa1-xAs heterojunction layers (1981) (0)
- UHV-STM Nanofabrication and Semiconductor Interface Characterization: Transitions to CMOS Technology (1997) (0)
- Energy loss to bound hydrogen at the Si surface (1999) (0)
- Approaches to Quantum Transport in Semiconductor Nanostructures (1991) (0)
- Monte Carlo Simulations Of Femtosecond Spectroscopy In Semiconductors (1988) (0)
- Session 26 Solid state devices — Modeling and MOS devices (1981) (0)
- Effect of local vibrations on the H and D atom densities at a Si surface (1999) (0)
- Comment on "Effect of Collisional Broadening on Monte Carlo Simulations of High-Field Semiconductor Transport in (1981) (0)
- Thin polycrystalline films of indium phosphide on low-cost substrates. Final report, September 30, 1976-March 31, 1978 (1978) (0)
- A Jet-Stream Solution for the Current in Planar-Doped-Barrier Devices (1984) (0)
- IIA-1 scaling and transient properties of high electron mobility transistors (1986) (0)
- Anharmonic Lifetime of H and D on the Si Surface (2000) (0)
- Phonon energy dependence of scattering in quasi‐two‐dimensional electron gases at low temperature (1987) (0)
- Electronic Transport in Semiconductor Heterostructures and in Mesoscopic Systems (1998) (0)
- Computer-aided analysis of semiconductor lasers-MINILASE (1990) (0)
- Mathematics: The Study of Quantity, Structure, Space, and Change (2013) (0)
- Appendix E: The Power Balance Equation from the Method of Moments (2000) (0)
- III. 2 - Monte Carlo Simulation of GaAs–Al x Ga 1 − x as Field-Effect Transistors (1992) (0)
- STEM in Our Daily Lives (2013) (0)
- Ion Implantation Defects in Silicon and the Performance of Micron and Submicron Devices. (1983) (0)
- Isotope Effect in the Equilibrium between the Silicon Surface and the Gas Phase of Hydrogen or Deuterium (1999) (0)
- Appendix F: The SelfConsistent Potential at a Heterojunction (Quantum Case) (2000) (0)
- Monte Carlo simulations of femtosecond relaxation of photoexcited electrons in AlGaAs/GaAs quantum wells (1987) (0)
- Session 25 Solid-state devices — High speed III-V devices (1982) (0)
- Scanning tunneling microscope-based nanolithography for electronic device fabrication (1993) (0)
- A Special Issue on Foundations of Computational and Theoretical Nanoscience (2011) (0)
- DesCArtES: Distributed Center for Advanced Electronics Simulations (1999) (0)
- Semiconductor superlattice photodetectors (1986) (0)
- MP-B8 phonon contribution to quantum-well and to double-heterostructure laser operation (1980) (0)
- InGaPAs by Metalorganic Chemical Vapor Deposition. (1983) (0)
- Numerical Study of Minority Carrier Induced Diffusion Capacitance in VCSELs Using Minilase (2002) (0)
- High speed 1.3µm InGaAsP Buried Crescent Injection Lasers With Semi-Insulating Current Confinement Layer (1987) (0)
- A new paradigm for examining MOSFET failure modes (2002) (0)
- High energy diffusion equation for polar semiconductors (1983) (0)
- Electronic Transport in Semiconductors at High Energies: Effects of the Energy Band Structure (1993) (0)
- Simulation of Nonlinear Gain and the Modulation of Quantum Well Laser Diodes (1998) (0)
- Semiconductor superlattic photodetectors (1985) (0)
- Thermionic Current in Direct-Indirect Energy-Gap GaAs/Al x Ga 1-x As Interfaces (1993) (0)
- New Approach to Hot Electron Effects in Si-MOSFETs Based on an Evolutionary Algorithm Using a Monte Carlo Like Mutation Operator (1998) (0)
- Computational electronics. Semiconductor transport and device simulation. Kluver Academic Publishers. Boston, Dordrecht, London, 1991. 268 Seiten, zahlreiche Abbildungen und Tabellen. Preis: Dfl. 162.00, US $ 75.00. ISBN 0–7923–9088–1 (1991) (0)
- LPE-GROWTH OF HIGH PURITY Ga0.47In0.53As- AND Ga0.31In0.69As0.69P0.31- LAYERS LATTICE MATCHED TO InP (1982) (0)
- Channel Hot Electron Degradation-Delay in MOS Transistors Due to Deuterium Anneal (2000) (0)
- Engineering and Technology: Math and Science Meet Creativity and Design (2013) (0)
- Semi-insulating cobalt doped indium phosphide grown by MOCVD (1988) (0)
- Multi-Scale Approach to Semiconductor Device Simulation. (1995) (0)
- Self-consistent simulation of VCSELs using MINILASE (1999) (0)
- Numerical Approaches to Transport in Mesoscopic Systems (1992) (0)
- Quantum Mechanics for Nanoscience and Nanotechnology (2006) (0)
- Energy and momentum relaxation of charge carriers in Ge and Si under uniaxial stress (1978) (0)
- \emph{Ab initio} study of semiconducting carbon nanotubes adsorbed on the Si(100) surface: diameter- and registration-dependent atomic configurations and electronic properties (2006) (0)
- COUPLING CLASSICAL CARRIER TRANSPORT, C A P T U R E , A N D SIZE QUANTIZATION IN A QUANTUM WELL LASER SIMULATOR (2007) (0)
- The Heterojunction Barrier and Related Transport Problems (2000) (0)
- Modulation Performance Of 1.3 and 1.51 µm InGaAsP Buried Crescent Injection Lasers With Semi-Insulating Current Confinement Layer (1987) (0)
- Multiscale Approach to Device Simulation Combining Semiclassical and Quantum Regions (2001) (0)
- High field transport of free carriers at the Si-SiO2 interface (1983) (0)
- Computational electronic: semiconductor transport and device simulation / K. Hess (1991) (0)
- Appendix D: Hall Effect and Magnetoresistance for Small Magnetic Fields (2000) (0)
- Optical simulation of oxide-confined vertical cavity surface emitting lasers (1998) (0)
- ELECTRON TRANSPORT IN GaAs/Al x Ga 1-x As HETEROJUNCTIONS AT LOW TEMPERATURES (1988) (0)
- VIA-4 impact ionization across the band-edge discontinuity for a superlattice photomultiplier (1986) (0)
- Proceedings of the Conference on Surfaces and Interfaces in Mesoscopic Devices (SIMD) 1999, v27 n5/6, May/Jun 2000 (2000) (0)
- Manufacturing multilevel metal CMOS with deuterium anneals for improved hot-carrier reliablility (1998) (0)
- Monte Carlo simulation of InGaAs/AlGaAs/GaAs real-space transfer transistors (1992) (0)
- Multi-Scale Approach to Semiconductor Device Simulation 6. AUTHOR(S) (1995) (0)
- 1983 Index IEEE Electron Device Letters VOI. EDL-4 (1983) (0)
- Phonon Generation in Nanowires and Non-ohmic Phonon-Assisted Landauer Resistance (1996) (0)
- BAND-STRUCTURE DEPENDENT IMPACT 10 NIZATI 0 N IN SILICON AND GALLIUM ARSENIDE < © (2016) (0)
- Future Semiconductor Devices and Their Simulation (2000) (0)
- Transport properties of field-effect transistors (1977) (0)
- The Theory of Energy Bands in Crystals (2000) (0)
- Some More Advanced STEM Problems (2013) (0)
- Semiconductor heterostructures and new forms of devices (1986) (0)
- The Symmetry of the Crystal Lattice (2000) (0)
- Thin polycrystalline films of indium phosphide on low-cost substrates. Quarterly report No. 3, April 3--July 2, 1977 (1977) (0)
- Effect of Localized Vibrations on the Si Surface Concentrations of Hydrogen or Deuterium (1998) (0)
- Thin polycrystalline films of indium phosphide on low-cost substrates. Quarterly report No. 1, September 30, 1976--January 1, 1977 (1977) (0)
- Appendix G: Diffusive Transport and Thermionic Emission in Schottky Barrier Transport (2000) (0)
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