Katsumi Kishino
#172,227
Most Influential Person Now
Engineer
Katsumi Kishino's AcademicInfluence.com Rankings
Katsumi Kishinoengineering Degrees
Engineering
#7823
World Rank
#9256
Historical Rank
Systems Engineering
#85
World Rank
#88
Historical Rank
Applied Physics
#2747
World Rank
#2795
Historical Rank
Download Badge
Engineering
Why Is Katsumi Kishino Influential?
(Suggest an Edit or Addition)According to Wikipedia, Katsumi Kishino is an engineer at Sophia University in Tokyo, Japan. He was named a Fellow of the Institute of Electrical and Electronics Engineers in 2016 for his contributions to III-V light emitter technology.
Katsumi Kishino's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- InGaN/GaN Multiple Quantum Disk Nanocolumn Light-Emitting Diodes Grown on (111) Si Substrate (2004) (346)
- Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate (2010) (338)
- Resonant cavity-enhanced (RCE) photodetectors (1991) (327)
- Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays (2009) (247)
- Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm (2002) (167)
- Ti-mask Selective-Area Growth of GaN by RF-Plasma-Assisted Molecular-Beam Epitaxy for Fabricating Regularly Arranged InGaN/GaN Nanocolumns (2008) (161)
- Wavelength variation of 1.6 µm wavelength buried heterostructure GaInAsP/InP lasers due to direct modulation (1982) (120)
- AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy (2002) (120)
- Selective-area growth of GaN nanocolumns on Si(111) substrates for application to nanocolumn emitters with systematic analysis of dislocation filtering effect of nanocolumns (2015) (111)
- InGaN/GaN nanocolumn LEDs emitting from blue to red (2007) (103)
- Monolithic Integration of InGaN-Based Nanocolumn Light-Emitting Diodes with Different Emission Colors (2012) (100)
- Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well (2010) (100)
- Self-organization of GaN/Al0.18Ga0.82N multi-layer nano-columns on (0 0 0 1) Al2O3 by RF molecular beam epitaxy for fabricating GaN quantum disks (1998) (93)
- Origin of high oscillator strength in green-emitting InGaN∕GaN nanocolumns (2006) (89)
- Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching (2010) (86)
- Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AlN multiple-quantum wells (2004) (84)
- Random laser action in GaN nanocolumns (2010) (77)
- Structural and optical properties of GaN nanocolumns grown on (0001) sapphire substrates by rf-plasma-assisted molecular-beam epitaxy (2007) (74)
- Two-dimensional light confinement in periodic InGaN/GaN nanocolumn arrays and optically pumped blue stimulated emission. (2009) (74)
- Resonant cavity enhanced AlGaAs/GaAs heterojunction phototransistors with an intermediate InGaAs layer in the collector (1990) (73)
- Enhanced carrier confinement effect by the multiquantum barrier in 660 nm GaInP/AlInP visible lasers (1991) (71)
- Selective-area growth of GaN nanocolumns on titanium-mask-patterned silicon (111) substrates by RF-plasma-assisted molecular-beam epitaxy (2008) (70)
- A theoretical study of resonant cavity‐enhanced photodectectors with Ge and Si active regions (1992) (66)
- GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide (1981) (60)
- Near-Infrared InGaN Nanocolumn Light-Emitting Diodes Operated at 1.46 µm (2012) (59)
- GaN/AlGaN nanocolumn ultraviolet light-emitting diodes grown on n-(111) Si by RF-plasma-assisted molecular beam epitaxy (2008) (59)
- Stimulated emission from GaN nanocolumns (2004) (52)
- Monolithic integration of four-colour InGaN-based nanocolumn LEDs (2015) (50)
- 600-nm-Range GaInP/AlInP Strained Quantum Well Lasers Grown by Gas Source Molecular Beam Epitaxy (1994) (49)
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm (1979) (48)
- Lattice parameters, deviations from Vegard’s rule, and E2 phonons in InAlN (2008) (48)
- Characterization of Overgrown GaN Layers on Nano-Columns Grown by RF-Molecular Beam Epitaxy (2001) (45)
- Ultraviolet GaN‐based nanocolumn light‐emitting diodes grown on n‐(111) Si substrates by rf‐plasma‐assisted molecular beam epitaxy (2008) (44)
- Dynamic spectral width of rapidly modulated 1.58 m GaInAsP/InP buried-heterostructure distributed-Bragg-reflector integrated-twin-guide lasers (1981) (40)
- Positive binding energy of a biexciton confined in a localization center formed in a single InxGa1-xN/GaN quantum disk (2009) (40)
- Selective-Area Growth of GaN Nanocolumns on Si(111) Substrates Using Nitrided Al Nanopatterns by RF-Plasma-Assisted Molecular-Beam Epitaxy (2008) (39)
- Monolithic Integration of Laser and Amplifier/Detector by Twin-Guide Structure (1978) (39)
- 1.5-1.6 μm GaInAsP/InP Integrated twin-guide lasers with first-order distributed Bragg reflectors (1980) (39)
- Optically Pumped Green (530–560 nm) Stimulated Emissions from InGaN/GaN Multiple-Quantum-Well Triangular-Lattice Nanocolumn Arrays (2011) (39)
- Dislocation reduction via selective-area growth of InN accompanied by lateral growth by rf-plasma-assisted molecular-beam epitaxy (2010) (38)
- Coupling coefficient in strongly coupled dielectric waveguides (1977) (38)
- Lasing Action on Whispering Gallery Mode of Self-Organized GaN Hexagonal Microdisk Crystal Fabricated by RF-Plasma-Assisted Molecular Beam Epitaxy (2011) (38)
- Growth and characterization of InGaN/GaN nanocolumn LED (2006) (38)
- Refractive indices measurement of (GaInP)m/(AlInP)n quasi‐quaternaries and GaInP/AlInP multiple quantum wells (1994) (37)
- Two-dimensional multicolor (RGBY) integrated nanocolumn micro-LEDs as a fundamental technology of micro-LED display (2019) (36)
- Wide bandgap over 3 eV and high p-doping BeZnTe grown on InP substrates by molecular beam epitaxy (2000) (35)
- Changes of lemon flavor components in an aqueous solution during UV irradiation (1997) (33)
- Directional radiation beam from yellow-emitting InGaN-based nanocolumn LEDs with ordered bottom-up nanocolumn array (2014) (32)
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with (100) Substrate in the Range of 1.2–1.5 µm (1978) (32)
- Yellow-green ZnCdSe/BeZnTe II-VI laser diodes grown on InP substrates (2002) (31)
- Improvement of Crystal Quality of RF-Plasma-Assisted Molecular Beam Epitaxy Grown Ga-Polarity GaN by High-Temperature Grown AlN Multiple Intermediate Layers (2000) (31)
- Growth of high-In-content InAlN nanocolumns on Si (1 1 1) by RF-plasma-assisted molecular-beam epitaxy (2007) (31)
- Intersubband relaxation dynamics inGaN∕AlNmultiple quantum wells studied by two-color pump-probe experiments (2005) (31)
- Green-Light Nanocolumn Light Emitting Diodes With Triangular-Lattice Uniform Arrays of InGaN-Based Nanocolumns (2014) (30)
- GaN/AlGaN Nanocolumn Ultraviolet Light-Emitting Diode Using Double-Layer Graphene as Substrate and Transparent Electrode. (2019) (30)
- Selective growth of GaN nanocolumns by Al thin layer on substrate (2007) (30)
- Molecular beam epitaxial growth of MgZnCdSe on (100) InP substrates (1995) (30)
- Room-temperature CW operation of 1.60 μm GaInAsP/InP buried-heterostructure integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide (1982) (29)
- Improved Molecular Beam Epitaxy for Fabricating AlGaN/GaN Heterojunction Devices (2002) (28)
- Overgrowth of GaN layer on GaN nano-columns by RF-molecular beam epitaxy (2002) (27)
- Fabrication and lasing properties of mesa substrate buried heterostructure GaInAsP/InP lasers at 1.3 µm wavelength (1980) (27)
- Wavelength demultiplexing heterojunction phototransistor (1990) (25)
- High structural quality InN∕In0.75Ga0.25N multiple quantum wells grown by molecular beam epitaxy (2006) (25)
- Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer (2016) (24)
- Volatile components of Chinese quince (Pseudocydonia sinensis Schneid) (1987) (24)
- Novel selective area growth (SAG) method for regularly arranged AlGaN nanocolumns using nanotemplates (2015) (23)
- AlGaN Resonant Tunneling Diodes Grown by rf-MBE (2001) (23)
- Mesa-substrate buried heterostructure GaInAsP/InP injection lasers (1979) (23)
- 2.6 μm/h High-Speed Growth of GaN by RF-Molecular Beam Epitaxy and Improvement of Crystal Quality by Migration Enhanced Epitaxy (1999) (22)
- Selective area growth of InGaN-based nanocolumn LED crystals on AlN/Si substrates useful for integrated μ-LED fabrication (2018) (22)
- 600‐nm wavelength range GaInP/AlInP quasi‐quaternary compounds and lasers prepared by gas‐source molecular‐beam epitaxy (1993) (21)
- GaAs-AlxGa1-xAs integrated twin-guide lasers with distributed Bragg reflectors (1977) (21)
- Low threshold current cw operation of gainasp/inp buried heterostructure distributed bragg-reflector integrated-twin-guide laser emitting at 1.5-1.6 μm (1981) (21)
- New 1.6 ?m wavelength GaInAsP/InP buried heterostructure lasers (1980) (20)
- High‐optical‐quality GaInP and GaInP/AlInP double heterostructure lasers grown on GaAs substrates by gas‐source molecular‐beam epitaxy (1989) (20)
- High speed growth of device quality GaN and InGaN by RF-MBE (1999) (20)
- 1.6 µm Wavelength Buried Heterostructure GaInAsP/InP Lasers (1980) (19)
- Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer (2018) (19)
- II-VI semiconductors on InP for green-yellow emitters (2002) (19)
- Refractive index measurements of MgZnCdSe II–VI compound semiconductors grown on InP substrates and fabrications of 500–600 nm range MgZnCdSe distributed Bragg reflectors (1997) (18)
- Continuous-Wave (CW) operation of GaInP-AlGaInP visible compressively strained multiple quantum-wire (CS-WQWR) lasers (1995) (18)
- Carrier-density dependence of photoluminescence from localized states in InGaN/GaN quantum wells in nanocolumns and a thin film (2015) (18)
- New-Type Photocathode for Polarized Electron Source with Distributed Bragg Reflector (1993) (18)
- Room temperature continuous wave operation of GaInP/AlInP visible-light laser with GaInP/AlInP superlattice confinement layer grown by gas source molecular beam epitaxy (1990) (18)
- 633 nm Red Emissions from InGaN Nanocolumn Light-Emitting Diode by Radio Frequency Plasma Assisted Molecular Beam Epitaxy (2013) (18)
- Formation of InGaN quantum dots in regularly arranged GaN nanocolumns grown by rf‐plasma‐assisted molecular‐beam epitaxy (2010) (18)
- Remarkable reduction of threshold current density by substrate misorientation effects in 660 nm visible light lasers with GaInP bulk active layers (1992) (17)
- Light localization characteristics in a random configuration of dielectric cylindrical columns (2010) (17)
- Growth of very large InN microcrystals by molecular beam epitaxy using epitaxial lateral overgrowth (2015) (17)
- Photopumped green lasing on BeZnSeTe double heterostructures grown on InP substrates (2009) (17)
- Response to “Comment on ‘AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy’ ” [Appl. Phys. Lett. 83, 3626 (2003)] (2003) (17)
- Shortest wavelength (607 nm) operations of GaInP/AlInP distributed Bragg reflector lasers (1992) (17)
- Characterization of ZnCdSeTe/MgZnSeTe materials for ZnTe‐based visible optical devices (2004) (16)
- Visible Light Emitting Diode with ZnCdSe/BeZnTe Superlattices as an Active Layer and MgSe/BeZnTe Superlattices as a p‐Cladding Layer (2002) (16)
- GaN nanocolumn arrays with diameter <30 nm prepared by two-step selective area growth (2015) (15)
- Selective Meltbacked Substrate Inner-Stripe AlGaAs/GaAs Lasers Operated under Room Temperature CW Condition (1983) (15)
- Axial-mode selectivities for various types of integrated twin-guide lasers (1977) (15)
- Growth study of self-assembled GaN nanocolumns on silica glass by plasma assisted molecular beam epitaxy (2017) (15)
- Well-arranged novel InGaN hexagonal nanoplates at the tops of nitrogen-polarity GaN nanocolumn arrays (2012) (15)
- Lasing Actions in GaN Tiny Hexagonal Nanoring Resonators (2010) (15)
- 1.6 µm wavelength GaInAsP/InP BH lasers (1981) (14)
- Growth and characterization of novel MgSe/ZnCdSe superlattice quasi-quaternaries on InP substrates (1998) (14)
- Near-field optical imaging of light localization in GaN nanocolumn system (2014) (14)
- ZnCdTe/ZnTe Light Emitting Diodes with CdSe n-Type Contact Layers Grown on ZnTe Substrates by Molecular Beam Epitaxy (2002) (14)
- Photoluminescence Behaviors of Orange-Light-Emitting InGaN-Based Nanocolumns Exhibiting High Internal Quantum Efficiency (17–22%) (2013) (13)
- Growth and Characterization of Nitrogen-Doped MgSe/ZnSeTe Superlattice Quasi-Quaternary on InP Substrates and Fabrication of Light Emitting Diodes (1999) (13)
- Long life operations over 5000 hours of BeZnSeTe/MgZnCdSe visible light emitting diodes on InP substrates (2006) (13)
- Photopumped Lasing Characteristics in Green-to-Yellow Range for BeZnSeTe II–VI Compound Quaternary Double Heterostructures Grown on InP Substrates (2011) (13)
- Gas source molecular beam epitaxial growth and characterization of 600–660 nm GaInP/AlInP double-heterostructure lasers (1993) (13)
- High-Quality GaN on AlN Multiple Intermediate Layer with Migration Enhanced Epitaxy by RF-Molecular Beam Epitaxy (2000) (13)
- Fabrication and lasing characteristics of 0.67 µm GaInAsP/AlGaAs visible lasers prepared by liquid phase epitaxy on (1987) (12)
- 0.67 µm Room-Temperature Operation of GaInAsP/AlGaAs Lasers on GaAs Prepared by LPE (1984) (12)
- Yellow light (576 nm) lasing emission of GaInP/AlInP multiple quantum well lasers prepared by gas-source-molecular-beam-epitaxy (1990) (12)
- Reduction of threading dislocations in migration enhanced epitaxy grown GaN with N-polarity by use of AlN multiple interlayer (2001) (12)
- Overgrowth of GaN on Be-doped coalesced GaN nanocolumn layer by rf-plasma-assisted molecular-beam epitaxy—Formation of high-quality GaN microcolumns (2009) (12)
- High-speed GaN growth and compositional control of GaN-AlGaN superlattice quasi-ternary compounds by RF-radical source molecular beam epitaxy (1998) (12)
- Quasi-Whispering Gallery Mode Lasing Action in an Asymmetric Hexagonal GaN Microdisk (2013) (11)
- Low (2.0 kA/cm/sup 2/) threshold current density operation of 629 nm GaInP/AlInP multiquantum well lasers grown by gas source molecular beam epitaxy on 15 degrees off (1991) (11)
- Growth and Characterization of ZnCdSe/BeZnTe II–VI Compound Type-II Superlattices on InP Substrates and Their Application for Visible Light Emitting Devices (2001) (11)
- Novel ZnCdSeMgZnCdSe compound system grown on InP substrates by MBE and theoretical investigation of 550–640 nm range ZnCdSeMgZnCdSe lasers (1996) (11)
- Surface Phonons Studied by Raman Scattering in GaN Nanostructures (2017) (11)
- Improved Responsivity of AlGaN-Based Resonant Cavity-Enhanced UV Photodetectors Grown on Sapphire by RF-MBE (2002) (11)
- Improvement of electrical property and surface morphology of GaN grown by RF-plasma assisted molecular beam epitaxy by introduction of multiple AlN intermediate layer (2001) (11)
- Resonant-Cavity-Enhanced UV Metal-Semiconductor-Metal (MSM) Photodetectors Based on AlGaN System (2001) (11)
- Low‐temperature photoluminescence studies of In‐rich InAlN nanocolumns (2012) (11)
- Growth and characterization of InGaN double heterostructures for optical devices at 1.5–1.7 mm communication wavelengths (2004) (10)
- Ultrafast intersubband relaxation dynamics at 1.55μm in GaN/AlN multiple quantum disk nanocolumns (2008) (10)
- Influence of GaN column diameter on structural properties for InGaN nanocolumns grown on top of GaN nanocolumns (2016) (10)
- Photoluminescence of exciton and biexciton in GaN nanocolumns (2008) (10)
- Raman Scattering in GaN Nanocolumns and GaN/AlN Multiple Quantum Disk Nanocolumns (2006) (10)
- Optical microresonant modes acting in thin hexagonal GaN microdisk (2014) (10)
- Characterization of N-doped MgZnSSe compound system grown on intentionally misoriented GaAs substrates by molecular beam epitaxy (1995) (9)
- Sensing operations based on hexagonal GaN microdisks acting as whispering-gallery mode optical microcavities. (2015) (9)
- Proposal of a novel BeZnSeTe quaternary for II‐VI middle range visible light emitting devices on InP substrates (2004) (9)
- Spectrally-broadened multimode lasing based on structurally graded InGaN nanocolumn photonic crystals suitable for reduction of speckle contrast (2016) (9)
- Intersubband Absorption at? ? 1.2-1.6 ?m in GaN/AlN Multiple Quantum Wells Grown by rf-Plasma Molecular Beam Epitaxy (2002) (9)
- Complex strain distribution in individual facetted InGaN/GaN nano-columnar heterostructures (2013) (9)
- 1.6 µm wavelength GaInAsP/InP lasers prepared by two-phase solution technique (1981) (9)
- Epitaxial lateral overgrowth of InN by rf-plasma-assisted molecular-beam epitaxy (2011) (9)
- Yellow‐green emitters based on beryllium‐chalcogenides on InP substrates (2004) (8)
- Single mode emission and non-stochastic laser system based on disordered point-sized structures: toward a tuneable random laser. (2011) (8)
- Fabrication and optical properties of regularly arranged GaN-based nanocolumns on Si substrate (2019) (8)
- ZnCdTe/ZnTe Light Emitting Diodes with MgSeTe/ZnTe Superlattice Layers Grown on ZnTe Substrates by Molecular Beam Epitaxy (2002) (8)
- Effect of Be-doping on InGaN/GaN nanocolumn light-emitting diode structures by rf-plasma-assisted molecular-beam epitaxy (2008) (8)
- 660 nm wavelength GaInAsP/AlGaAs distributed feedback lasers (1988) (8)
- Photoluminescence properties of selectively grown InN microcrystals (2012) (8)
- Effects of V/III supply ratio on improvement of crystal quality of zincblende GaN grown by gas source molecular beam epitaxy using RF-radical nitrogen source (1995) (8)
- Structural and optical properties of Eu-doped GaN nanocolumns on (111) Si substrates grown by RF-plasma-assisted molecular beam epitaxy (2016) (8)
- Room temperature continuous wave operation of 671 nm wavelength GaInAsP/AlGaAs VSIS lasers (1990) (8)
- Remarkable improvement in emission efficiency of ZnCdSe/Zn(S)Se LEDs by thermal annealing (1995) (8)
- Self‐Organized Eu‐Doped GaN Nanocolumn Light‐Emitting Diode Grown by RF‐Molecular‐Beam Epitaxy (2018) (8)
- Remarkable reduction of threshold current density of 670 nm GaInAsP/AlGaAs visible lasers by increasing Al content of AlGaAs cladding layers (1989) (7)
- Aging characteristics of II–VI yellow light emitting diodes with beryllium chalcogenide (BeZnSeTe) active layers on InP substrates (2004) (7)
- Yellow–green lasing operations of ZnCdTe/MgZnSeTe laser diodes on ZnTe substrates (2006) (7)
- Whispering gallery mode in periodic InGaN‐based hexagonal nanoring arrays grown by rf‐MBE using Ti‐mask selective‐area growth (2010) (7)
- Self-organization mechanism of GalnP quantum wires in (GaP)m/(lnP)m short-period binary superlattices for GalnP/AllnP multi-quantum-wire (MQWR) lasers (1996) (7)
- Column diameter dependence of the strain relaxation effect in GaN/AlGaN quantum wells on GaN nanocolumn arrays (2019) (7)
- Strained single quantum well (SSQW) GaInP/AlInP visible lasers fabricated by novel shutter control method in gas source molecular beam epitaxy (1992) (6)
- Stable-wavelength operation of Europium-doped GaN nanocolumn light-emitting diodes grown by rf-plasma-assisted molecular beam epitaxy (2017) (6)
- Novel II–VI Light Emitting Diodes Fabricated on InP Substrates Applying Wide‐Gap and Highly p‐Dopable BeZnTe for p‐Cladding Layers (2000) (6)
- Energy- and density-dependent dynamics of photoexcited carriers in InN films (2009) (6)
- Light confinement in hexagonal GaN nanodisk with whispering gallery mode (2014) (6)
- Photon correlation study of background suppressed single InGaN nanocolumns (2015) (6)
- Growth of high‐In‐content InGaN multiple quantum disk nanocolumns on Si(111) by RF plasma‐assisted molecular‐beam epitaxy (2006) (6)
- Compound Semiconductors 2001 (2002) (6)
- Room temperature operation of 1.55µm wavelength-range GaN/AlN quantum well intersubband photodetectors (2005) (6)
- Flip‐chip bonding and fabrication of well‐ordered nanocolumn arrays on sputter‐deposited AlN/Si (111) substrate (2015) (6)
- Stimulated emission on two-dimensional distributed feedback scheme in triangular GaN nanocolumn arrays (2010) (6)
- Refractive index measurements of BeZnTe and related superlattices on InP and application for waveguide analysis of MgZnCdSe/BeZnTe visible lasers (2002) (6)
- Enhancement of light emission and internal quantum efficiency in orange and red regions for regularly arrayed InGaN/GaN nanocolumns due to surface plasmon coupling (2017) (6)
- Effects of nonradiative recombination on the temperature characteristics of threshold current density in 670 nm GaInAsP-AlGaAs visible lasers (1991) (6)
- Cavity -Enhanced (RCE) Photodetectors (1991) (5)
- MEASUREMENT OF COUPLING COEFFICIENT AND COUPLING LENGTH OF GaAs/AlGaAs INTEGRATED TWIN-GUIDE INJECTION LASERS PREPARED BY LIQUID-PHASE-EPITAXY. (1979) (5)
- MBE growth of novel MgSe/ZnSeTe : : N II-VI compound superlattice quasi-quaternaries on InP substrates and application to light-emitting diodes (1999) (5)
- Investigation of p-side contact layers for II-VI compound semiconductor optical devices fabricated on InP substrates by MBE (2015) (5)
- Chapter 4 Dynamic Single-Mode Semiconductor Lasers with a Distributed Reflector (1985) (5)
- InGaN/GaN MQW and Mg-Doped GaN Growth Using a Shutter Control Method by RF-Molecular Beam Epitaxy (1999) (5)
- Hexagonal GaN microdisk with wurtzite/zinc-blende GaN crystal phase nano-heterostructures and high quality zinc-blende GaN crystal layer (2014) (5)
- Development of yellow‐green LEDs and LDs using MgZnCdSe‐BeZnTe superlattices on InP substrates by MBE (2004) (5)
- Evaluation of bandgap energy and carrier density of InN nanocolumns (2009) (5)
- Spatial emission distribution and carrier recombination dynamics in regularly arrayed InGaN/GaN quantum structure nanocolumns (2016) (5)
- Flavor deterioration in yogurt. (1998) (5)
- Regularly arranged Eu-doped GaN nanocolumns grown by RF-plasma-assisted molecular beam epitaxy through Ti-mask selective-area growth technique (2019) (5)
- The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene (2020) (5)
- First photopumped yellow–green lasing operation of BeZnSeTe/(MgSe/BeZnTe) doublehetero structures (DHs) grown on InP substrates (2009) (5)
- MgZnCdSe/BeZnTe Visible Light-Emitting Diode with Longer Device Lifetime over 1000 h (2002) (5)
- Thermally Engineered Flip-Chip InGaN/GaN Well-Ordered Nanocolumn Array LEDs (2015) (5)
- TP-B4 1.6-µm wavelength GaInAsP/InP BH lasers (1980) (4)
- Optical properties of InGaN/GaN nanocolumns in yellow‐to‐red region (2012) (4)
- Independent drive of integrated multicolor (RGBY) micro-LED array using regularly arrayed InGaN based nanocolumns (2017) (4)
- Crystal structure and optical properties of a high-density InGaN nanoumbrella array as a white light source without phosphors (2016) (4)
- Epitaxial growth of GaN with a high growth rate of 1.4 μm/h by RF-radical source molecular beam epitaxy (1998) (4)
- Selective growth of GaN nanocolumns on predeposited Al patterns by rf-plasma-assisted molecular-beam epitaxy (2008) (4)
- Analysis of threshold current density of CdZnSe/ZnSSe strained well lasers (1993) (4)
- Ti‐mask selective‐area growth of GaN nanorings by RF‐plasma‐assisted molecular‐beam epitaxy (2009) (4)
- Effect of ZnSeZnSSe superlattice buffer on improved emission efficiency of ZnCdSeMgZnSSe quantum wells for MgZnSSe-based blue/green lasers (1996) (4)
- 671 nm GaInAsP/AlGaAs Visible DFB Lasers with Ridge-Waveguide Structure Grown by LPE (1989) (4)
- Effect of structural properties on optical characteristics of InGaN/GaN nanocolumns fabricated by selective-area growth (2017) (3)
- Intersubband photonic devices by group-III nitrides (2007) (3)
- Optical properties of arrays of hexagonal GaN microdisks acting as whispering‐gallery‐mode‐type optical microcavities (2015) (3)
- Red‐Emitting InGaN‐Based Nanocolumn Light‐Emitting Diodes with Highly Directional Beam Profiles (2019) (3)
- Absorption Coefficient Measurements of MgZnCdSe II-VI Compounds on InP Substrates and Quantum Confined Stark Effect in ZnCdSe/MgZnCdSe Multiple Quantum Wells (1998) (3)
- Confinement of Optical Phonons Observed by Raman Scattering in GaN/AlN Multiple Quantum Disk Nanocolumns (2013) (3)
- Zn irradiation effects in MBE growth of MgSe/BeZnSeTe II VI compound superlattices on InP substrates (2007) (3)
- High p-type doping level of MgZnCdSe on InP substrates by inserting ZnTe thin layers (2006) (3)
- Erratum: Vertical GaN nanocolumns grown on graphene intermediated with a thin AlN buffer layer (Nanotechnology 30 015604) (2018) (3)
- Carrier density dependence of localized carrier recombination dynamics in orange-emitting InGaN/GaN nanocolumns (2020) (3)
- Quantum confined Stark effect in ZnCdSe/MgZnCdSe multiple quantum wells grown on InP substrates (1998) (3)
- High-quality cubic and hexagonal InN crystals studied by micro-Raman scattering and electron backscatter diffraction (2016) (3)
- Self-Organized GaN/AlN Superlattice Nanocolumn Crystals Grown by RF-MBE (2004) (3)
- Fundamental optical properties of InN grown by epitaxial lateral overgrowth method (2013) (3)
- Anderson localization of light in two-dimensional random arrays of semiconductor nanocolumns (2013) (3)
- Substrate misorientation effects in AlGaInP lasers and crystals grown by gas source molecular beam epitaxy (1993) (3)
- Single InGaN nanocolumn spectroscopy (2015) (3)
- Reduction of Defect Density of ZnCdSe on InP Substrates by Introducing BeZnTe Buffer Layers (2002) (3)
- Graphene-Based Transparent Conducting Substrates for GaN/AlGaN Nanocolumn Flip-Chip Ultraviolet Light-Emitting Diodes (2021) (3)
- Low threshold current density operation of GaInP-AlGaInP visible multiple quantum wire-like lasers (MQWR-LDs) under the room temperature pulsed condition (1995) (3)
- Two‐photon absorption induced anti‐Stokes emission in single InGaN/GAN quantum‐dot‐like objects (2013) (3)
- MBE growth of BeZnCdSe quaternaries, MgSe/BeZnCdSe superlattice and quantum well structures on InP substrates (2001) (2)
- Breakdown of the Selection Rule of Raman Spectra in a Single GaN Nanocolumn (2012) (2)
- CW Operation of 0.67 µm GaInAsP/AlGaAs Laser at 208 K Grown on GaAs Substrates by LPE (1985) (2)
- Shutter control method for control of Al contents in AlGaN quasi-ternary compounds grown by RF-MBE (1998) (2)
- Proposal of BeZnTe/ZnSeTe superlattice quasi-quaternaries on InP substrates for yellow/green light emitting devices (2013) (2)
- Ultrafast intersubband relaxation in GaN/AlN multiple quantum wells (2004) (2)
- Periodic Radiation Patterns and Circulating Direction of Lasing Light by Quasi Whispering Gallery Mode in Hexagonal GaN Microdisk (2016) (2)
- Investigation of yellow/green II‐VI compound semiconductor laser diode structures on InP substrates (2016) (2)
- Room temperature negative differential resistance in AlN/GaN double barrier resonant tunneling diodes grown by RF-plasma assisted molecular beam epitaxy (2002) (2)
- Room temperature CW operation of GaInP/AlGaInP multiple quantum wire visible lasers (MQWR-LD) (1994) (2)
- Excitation area dependence of lasing modes in thin hexagonal GaN microdisks (2015) (2)
- GaAs multiple‐quantum‐well reflector modulators with 4:1 contrast ratios on Si (1991) (2)
- 674 nm wavelength planar-buried-heterostructure GaInAsP/AlGaAs visible laser diodes grown on GaAs by LPE (1987) (2)
- 1.5–1.6 µm Wavelength (100) GalnAsP/InP DH Lasers (1979) (2)
- Suppression of Inversion Domains and Decrease of Threading Dislocations in Migration Enhanced Epitaxial GaN by RF-Molecular Beam Epitaxy (2000) (2)
- Low threshold operation of GaInP/AlInP quantum wire lasers produced by (GaP) m /(InP) m short period binary super-lattice active layers (1994) (2)
- Twin-Guide Laser with Narrow Radiation Angle (1978) (2)
- Investigation of p‐contact layers for BeZnSeTe/MgZnCdSe optical devices on InP substrates (2014) (2)
- Monolithically integrated green-to-orange color InGaN-based nanocolumn photonic crystal LEDs with directional radiation beam profiles (2021) (1)
- Anderson localization of light in a random configuration of nanocolumns (2009) (1)
- Novel ZnCdSe/BeZnTe type-II superlattice structure grown on InP substrates by MBE (2001) (1)
- Effect of (GaP)/sub m//(InP)/sub m/ short period binary superlattice period on quantum wire formation by strain induced lateral layer ordering in GaInP/AlInP multi-quantum-wire lasers (1995) (1)
- Strained SQW GaInP/AlInP visible lasers fabricated by a novel shutter control method in gas source molecular beam epitaxy (1992) (1)
- Highly efficient blue to red emissions of InGaN/GaN nano-disks integrated into GaN nanocolumns (2005) (1)
- Effects of Introduction of InGaN Quantum Structures on Structural and Optical Properties of InGaN Nanocolumns (2018) (1)
- Lasing operation of ZnTe based yellow-green laser diodes (2005) (1)
- Anderson localization of light in a random configuration of semiconductor nanocolumns (2011) (1)
- Substrate Misorientation, Multi‐Quantum‐Barrier, and Thermal Annealing Effects in MgZnSSe and ZnCdSe Compounds and Blue‐Green II‐VI Light Emitting Devices (1995) (1)
- Micromirror arrays to assess luminescent nano-objects. (2011) (1)
- Raman Scattering from a Surface Phonon in GaN Nanowalls and Regularly-Arrayed GaN Nanocolumns (2011) (1)
- Threshold reduction and CW operation of LPE grown GaInAsP/AlGaAs red-light injection lasers with the 670nm wavelength (1990) (1)
- Switching of whispering gallery mode in hexagonal GaN microdisk by change in condition of reflection surface (2015) (1)
- Raman Scattering from Interface Phonons in GaInP / AlInP Superlattice (1994) (1)
- All‐optical modulation using intersubband transitions at 1.55 μm in GaN/AlN multiple quantum well (2005) (1)
- Super High Output Power of 4.2W in AlGalnN-Based Blue-Violet Laser Diode Array (2002) (1)
- Photo-excited carrier relaxation dynamics in InN films (2009) (1)
- Biosensors based on GaN nanoring optical cavities (2016) (1)
- Microsensors based on a whispering gallery mode in AlGaN microdisks undercut by hydrogen-environment thermal etching. (2017) (1)
- Narrow dynamic-spectral-width rapidly modulated GaInAsP/InP BH-DBR-ITG lasers for 1.55-µm wideband single-mode fiber transmission (1982) (1)
- Exciton and biexciton properties in GaN nanocolumn: dependence on morphology and diameter (2009) (1)
- Second harmonic generation from photonic structured GaN nanowalls (2009) (1)
- Mechanism of Selective Area Growth by MBE (2019) (1)
- CHANGES IN LEMON FLAVOURING COMPONENTS DURING UV-IRRADIATION (1996) (1)
- Wide‐range visible luminescence of ZnCdSe/BeZnTe type‐II superlattices grown on InP substrates (2014) (1)
- Micro-Raman characterization of InGaN/GaN single quantum well nanocolumns on Si(111) substrate (2013) (1)
- Optically Pumped Lasing Action with Unusual Wavelength of Approximately 390 nm in Hexagonal GaN Microdisks Fabricated by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy (2013) (1)
- Step Flow Surface Morphology in Plasma Assisted Molecular Beam Epitaxy Grown GaN (2000) (0)
- Periodically arranged GaN nanocolumns for the application to visible nanocolumn emitters (2015) (0)
- Periodically arranged GaN nanocolumns for the application to visible nanocolumn emitters (2015) (0)
- Ultrafast Intersubband Relaxation Dynamics and Coherent Nonlinearity in Bulk and Waveguide structures of GaN/AlN Multiple Quantum Wells (2007) (0)
- Mode Selectivity and Amplification in Twin-Guide Lasers (1976) (0)
- Quasi-free standing GaN epitaxial layer grown on nano-columnar GaN by RF-plasma assisted molecular beam epitaxy (2000) (0)
- Selective area growth of GaN nanocolumns by RF-MBE for light emitting devices (2008) (0)
- Integrated Twin-Guide Laser (2018) (0)
- Fabricated Cluster Array Nanocolumn Photonic Crystals (2016) (0)
- Middle-range visible light emitting devices fabricated using BeZnSeTe/MgZnCdSe II-VI compounds on InP substrates (2004) (0)
- Lasing Action in a Micro Optical Cavity with Wurzite/Zinc-Blende GaN Crystal Phase Nano Hetero-Structures (2013) (0)
- 600nm Range GaInP/AlInP Strained Quantum Well Semiconductor Lasers Grown by GSMBE on Misorientation Substrates (1993) (0)
- Non-Polar GaN/AlN Superlattices on A-plane AlN (500nm) Buffer Layers Grown by RF-MBE (2004) (0)
- Second harmonic generation from photonic structured (2009) (0)
- Ultrafast intersubband relaxation dynamics and coherent nonlinearity in GaN/AlN multiple quantum wells (2006) (0)
- Investigation of n-side current injection structures for II-VI compound semiconductor optical devices on InP substrates (2017) (0)
- Analysis of device structures for II-VI compound semiconductor laser diodes on InP substrates (2016) (0)
- Evaluation of surface diffusion lengths during InGaN growth by rf-MBE (2016) (0)
- Analysis of Anderson localization of light in GaN nanocolumns (2011) (0)
- Ultrafast intersubband relaxation dynamics in GaN/AlN multiple quantum wells using two-color pump-probe technique (2005) (0)
- Structural and optical properties in InGaN/GaN single quantum wells on GaN nanocolumns (2017) (0)
- Examination of novel optical devices based on nitride microdisk array (2017) (0)
- Investigation of carrier transport phenomena by near-field excitation and observation (2017) (0)
- Effect of V/III ratio on structural and optical properties of Eu doped GaN nanocolumns grown by RF-MBE (2016) (0)
- Regularly arranged InGaN-based nanocolumns and related device technology (2011) (0)
- Randomness dependence and generation mechanism of stimulated emission in regularly arranged InGaN/GaN nanocolumns (2017) (0)
- Optical properties in InGaN/AlGaN quantum wells on regularly arrayed GaN nanocolumns (2017) (0)
- Study on mechanism of re-entrant RHEED oscillation observed during LT-MBE growth of GaAs (2002) (0)
- Lattice parameters and optical phonons (2008) (0)
- Enhanced light emission from regularly arrayed InGaN/GaN nanocolumns due to surface plasmon coupling (2017) (0)
- Light Localization and Stimulated Emission in InGaN/GaN Nanocolumns (2015) (0)
- Spin-polarized electron source with optoelectronic semiconductor layer with a split valence band (1993) (0)
- Green region stimulated emission in optically pumped InGaN/GaN MQW nanocolumn arrays of triangular lattice (2010) (0)
- Growth temperature dependence of InGaN/GaN multiple quantum wells nanocolumns (2016) (0)
- Fabrication of regularly arranged Eu doped GaN nanocolumns (2018) (0)
- Fabrication of InGaN:Eu/GaN quantum well on regularly arranged GaN nanocolumns (2017) (0)
- Triangle-lattice InGaN/GaN nanocolumn arrays exhibiting photonic crystal effect (Conference Presentation) (2017) (0)
- Formation of indium tin oxide transparent electrodes by magnetron sputtering for II‐VI compound semiconductor optical devices on InP substrates (2014) (0)
- Low threshold current GaInAsP/InP Integrated Twin Guide Lasers with Distributed Bragg Reflector emitting at 1.55µm (1982) (0)
- Luminescence Properties of Localized States in InGaN/GaN Multiple Quantum Wells (2016) (0)
- Investigation of the device pattern geometry for improving characteristics of well-ordered-nanocolumns flip-chip LEDs (2016) (0)
- Plasmonic Characteristics of triangular latticed Au/InGaN/GaN nanocolumns (2017) (0)
- Raman Scattering in GaN/AlN Multiple Quantum Disk Nanocolumns (2007) (0)
- High-quality InN grown by rf-plasma assisted molecular beam epitaxy as novel materials for optical communication (2003) (0)
- Influence of Fermi-pinning on electrical characteristics of regularly arranged GaN nanocolumns (2017) (0)
- Optically pumped lasing action around unusual wavelength of 390 nm in hexagonal GaN microdisks fabricated by rf-MBE (2012) (0)
- DISTRIBUTED BRAGG REFLECTOR INTEGRATED TWIN-GUIDE LASER IN THE 1. 5 mu M WAVELENGTH. (1982) (0)
- Mode-Controlled Galnasp-Inp Long Wavelength Lasers (1981) (0)
- Optical Property of Triangle-Shaped GaN Microdisk Array with Triangular Lattice (2014) (0)
- Proposal of BeZnSeTe/MgZnCdSe II–VI compound semiconductors on InP substrates for green laser diodes (2008) (0)
- Growth mechanisms and critical column diameter in InGaN nanocolumns (2016) (0)
- Spatiotemporal Imaging of Nonequilibrium Current During Impact Ionization Avalanche in n-GaAs (2002) (0)
- Investigation of ZnCdSe/BeZnTe hetero barriers on InP substrates using n-i-n diodes (2017) (0)
- Ordered InGaN/GaN nanocolumns on graphene (2016) (0)
- Crystal Growth and Characterization of II-VI Compound Light Emitting Diodes with Novel Superlattice Quasi-Quaternary Cladding Layers on InP Substrates (1998) (0)
- Yellow(576-nm) laser emission from (GaInP/AlInP)MQW/AlInP double heterostructure at 109 K (1990) (0)
- Twin-Guide Laser Monolithically Integrated with Amplifier or Detector (1978) (0)
- Application of indium tin oxide to the p‐cladding layers of yellow/green II‐VI compound semiconductor laser diode structures on InP substrates (2016) (0)
- Fabrication of GaN nano-columns and application for GaN quantum disk (1998) (0)
- Investigation of the hole injection structure for ZnCdSe/MgZnCdSe/MgZnSeTe visible optical devices on InP substrates (2017) (0)
- InGaN-based nanocolumns for green light emitters (2010) (0)
- Position control of GaN nanocolumns by selective area growth on patterned substrates (2008) (0)
- Preface on Special Issue on Semiconductor Green Laser (2010) (0)
- Molecular Beam Epitaxial Growth of GaN Nanocolumns and Related Nanocolumn Emitters (2017) (0)
- Comparison of surface plasmon polariton characteristics of Ag- and Au-based InGaN/GaN nanocolumn plasmonic crystals (2021) (0)
- Scanning near-field optical spectroscopy and carrier transport based analysis in mesoscopic regions for two-dimensional semiconductors (2022) (0)
- High Speed Growth and Micro / Quantum Structure Control of III-Nitrides for Device Application by RF - Radical Source Molecular Beam Epitaxy (1998) (0)
- Ultrafast intersubband relaxation at 1.55 /spl mu/m in GaN/AlN MQWs (2003) (0)
- GaN-based nanocolumn emitters and related technology (2008) (0)
- Artificial nanostructure devices of InAs produced by AFM oxidation S Sasa, A Nakashima, T Kita and M Inoue (2002) (0)
- Growth of self-organized GaN nanocolumn on dielectric DBR mirror (2016) (0)
- Electric Conduction in a Single GaN Nanocolumn (2012) (0)
- Rotation direction of WGM oscillation in hexagonal GaN microdisk (2018) (0)
- Eu concentration dependence of Eu doped GaN nanocolumns grown by RF-plasma-assisted molecular beam epitaxy (2016) (0)
- GaN nanocolumn light-emitters, growth, and optical characterization (2013) (0)
- Light Localization in a Random Configuration of Dielectric Nanocolumns (2010) (0)
- Substrate misorientation effects in 660-nm bulk GaInP active layer lasers grown by gas-source molecular beam epitaxy. (1992) (0)
- Selective area growth of GaN nanocolumns on graphene (2016) (0)
- Nonlinear susceptibility due to intersubband absorption saturation in GaN/AlN multiple quantum wells (2004) (0)
- High Speed InP-based Heterojunction Bipolar Transistors (2002) (0)
- Fabrication of nanocolumn resonators with dielectric multilayer mirror (2017) (0)
- Regularly Arrayed InGaN/GaN-Based Nanocolumns and the Application to Emitters (2015) (0)
- InN/InAlN Multiple Quantum Well Nanocolumns Grown on (111) Si Substrates by RF-Plasma Assisted Molecular Beam Epitaxy (2007) (0)
- Monolithic integration of InGaN-based nanocolumn array with different emission colors in microscopic area (2016) (0)
- Investigation of electrode materials for MgSe/ZnCdSe resonant tunneling diodes on InP substrates (2017) (0)
- Growth of InGaN/GaN Nanocolumns on Si Substrates with AlN Buffer Layers (2019) (0)
- Compound semiconductors 2001 : proceedings of the twenty-eighth international symposium on compound semiconductors held in Tokyo, Japan, 1-4 October 2001 (2002) (0)
- Nitride-based Nanocolumns and Applications (2011) (0)
- Emission Characteristics Based on Nanocolumn Photonic Crystal Effect of Orderly Arrayed InGaN/GaN Nanocolumns (2014) (0)
- Ultrafast relaxation and absorption saturation of intersubband transition in GaN/AIN MQWs (2003) (0)
- Investigation of biosensors based on whispering gallery mode in hexagonal GaN microdisk (2016) (0)
- Monolithic Integration of Malticolor (20 color) Emission Nanocolumn Clystal (2016) (0)
- Novel Nano-Heterostructure Materials and Related Devices (2007) (0)
- Fabrication of Light Emitting Device Based on Regularly Arranged AlGaN Nanocolumns. (2016) (0)
- Measurements of Electronic Transport Properties of Single-Walled Carbon Nanotubes Encapsulating Alkali-Metals and C 60 Fullerenes via Plasma Ion Irradiation New Advances in Carbon Nanotube: From New Growth Processes to Nanodevices (2005) (0)
- AlGaAs integrated twin-guide lasers with distributed Bragg reflectors (1977) (0)
- Analysis of Depth of Localized States on InGaN/GaN Regularly Arranged Nanocolumns (2016) (0)
- 630nm Wavelength GaInP/AlInP Multi-Quantum Well (MQW) Lasers Grown on Misorientation Substrates by Gas Source Molecular Beam Epitaxy (GSMBE) (1991) (0)
- Anderson localization of light in two-dimensional random media (2011) (0)
- Relationship between active layer structures and optical properties of GaInN/GaN selective area grown nanocolumn crystals (2020) (0)
- Ultrafast intersubband relaxation in GaN/AlN MQWs (Invited Paper) (2005) (0)
- Resonance characteristics of WGM luminescence in hexagonal GaN microdisk (2019) (0)
- Anomalous quantum confined Stark effects in vertically coupled InAs/GaAs self- assembled quantum dots W Sheng and J-P Leburton (2002) (0)
- Room temperature cw operation of 671-nm GaInAsP/AlGaAs red light injection lasers with VSIS structure grown by LPE (1990) (0)
- FEM deformation analysis of air-bridged lateral epitaxial grown GaN films A Ishibashi (2002) (0)
- InGaN-based nanocoumn emitters suitable for display applications (2014) (0)
- Photoexcited carrier relaxation dynamics of InN films and nanocolumns (2011) (0)
- Growth and Characterization of InN/InGaN multiple quantum wells by RF-MBE (2005) (0)
- The influence of AlN buffer layer on the growth of self-assembled GaN nanocolumns on graphene (2020) (0)
- Research Trends and Prospects of Blue and Ultraviolet Laser Diodes (1995) (0)
- Investigation of surface plasmon coupling around nanocolumn lateral surfaces toward plasmonic LEDs with high emission efficiencies (2019) (0)
- Exciton many-body effects in GaN Nanocolumns (2017) (0)
- Substrate Misorientation Effect on Self-Organization of Quantum-Wires in (GaP)m/(InP)m Short Period Binary Superlattices (1995) (0)
- Zn Induced Layer Disordering in GaInP/AlInP Visible Multi-Quantum Well Distributed Bragg Reflector Laser Diode (1993) (0)
- GaN nanocolumn arrays with diameter (2015) (0)
- Author Correction: Crystal structure and optical properties of a high-density InGaN nanoumbrella array as a white light source without phosphors (2021) (0)
- InGaN-based nanocolumn light emitters in visible wavelength range (2013) (0)
- Self-Organized GaN Nanocolumns Grown on Silica Glass by RF-Molecular Beam Epitaxy (2016) (0)
- Self-organized InGaN/GaN multiple quantum well nanocolumn light emitting diodes grown on (111) Si substrate (2004) (0)
- Epitaxial Growth of InN Films and InN Nano-Columns by RF-MBE (2003) (0)
- AlGaN Microdisks on Top of Supporting GaN Columns Fabricated using Hydrogen Environment Anisotropic Thermal Etching (2015) (0)
- Gain and spectral response of molecular beam epitaxially grown AlGaAs/GaAs heterojunction phototransistor with an intermediate InGaAS layer in the collector (1990) (0)
- Nanocolumn Light Emitters from Ultraviolet to Red and InGaN/GaN Nanocolumn Arrays (2009) (0)
- Photonic band characterization in InGaN/GaN nanocolumn arrays with triangular and honeycomb lattices by angle-resolved micro-photoluminescence measurements (2021) (0)
- Growth of Eu doped GaN nanocolumns grown by NH 3 molecular beam epitaxy (2017) (0)
- The influence of periodic potential by GaN nanocolumns on GaN/AlGaN 2D-electron gas (2017) (0)
- Formation of AlN Embedded Insulator for InGaN/GaN nanocolumn LEDs (2017) (0)
- Invited 600 nm Range GaInP / AlInP Strained Quantum Well Semiconductor Lasers Grown by GSMBE on Misorientation Substrates (2008) (0)
- Growth and properties of InAlN nanocolumns emitting in optical communication wavelengths (2008) (0)
- GalnP/AllnP quasi-quaternary crystals and 607-640-nm wavelength qyasiquaternary lasers grown by gas-source-molecular beam epitaxy (1993) (0)
- Ultrafast Intersubband Relaxation and Carrier Cooling in GaN/AlN multiple quantum wells (2004) (0)
- Micro-Raman characterization of InGaN/GaN single quantum well nanocolumns on Si(111) substrate (2013) (0)
- RESONANT-CAVITY DETECTOR SENSITIVE IN AT LEAST TWO WAVELENGTH BANDS (2017) (0)
- Influence of surface plasmon on photonic band structure in regularly arrayed InGaN/GaN nanocolumns (2018) (0)
- Optical properties of InxAl1−xN film and nanocolumns (2009) (0)
- GaN Nanocolumn Light Emitting Devices (2017) (0)
- High Directionality Radiation Nanocolumn LEDs with AlGaN Cladding Layer (2016) (0)
- MOVPE-Growth and Characterization of Metastable (GaIn)(NAs)/GaAs Heterostructures for 1.3 μη® Lasers (2002) (0)
- Oprical properties of self-organized Eu doped GaN nanocolumns grown by RF-MBE (2018) (0)
- Electroabsorption modulator based on intersubband transitions in (Al)(Ga)N step quantum wells considering intermixing (2005) (0)
- Emission color control in InGaN/GaN ordered nanocolumn arrays with high filling factor (2021) (0)
- Theoretical estimation of threshold current of cubic GaInN/GaN/AlGaN quantum well lasers (1997) (0)
- Photo-generated Carrier Dynamics of InGaN/GaN Nanocolumns (2013) (0)
- Design and fabrication of optical cavity by arranged GaN nanocolumns (2019) (0)
- Biosensing operations based on whispering-gallery-mode optical cavities in single 1.0-µm diameter hexagonal GaN microdisks grown by radio-frequency plasma-assisted molecular beam epitaxy (2016) (0)
- Ultrafast carrier relaxation dynamics in InN films (2009) (0)
- Red emission enhancement from InGaN using nanocolumn plasmonic crystals with honeycomb and kagome lattices (2019) (0)
- Modulation of PL recombination processes in N doped GaAs/Alo.33Gao.67As SQW by electric field K Onomitsu, A Kawaharazuka, T Okabe, T Makimoto, H Saito and Y Horikoshi (2002) (0)
- LO phonon replica and exciton many-body effects of GaN Nanocolumns (2016) (0)
- Substrate Misorientation Effect On Cubic And Hexagonal GaN Grown On GaAs By Molecular Beam Epitaxy Using RF-radical Nitrogen Source (1994) (0)
- Effect of Growth Condition on Well-Arranged InGaN/GaN Nanocolumns Grown by Selective Area Growth (SAG) of rf-Plasma-Assisted Molecular-Beam Epitaxy (2008) (0)
- Random Lasing and Distributed Feedback Lasing in InGaN/GaN Nanocolumn Arrays (2013) (0)
- Fabrication of MgSe/ZnCdSe II-VI compound semiconductor resonant tunneling diodes on InP substrate (2017) (0)
- Room Temperature CW Operation of 1.5-1.6μm Wavelength Range GaInAsP/InP Lasers (1980) (0)
- Ultraviolet to Red Emission Nano-LEDs Based on One-Dimensional III-V Nitride Nanocolumns Grown on (111) Conductive Si Substrates (2007) (0)
- Thick cubic GaN grown on GaAs by three-step growth (2002) (0)
- Emission color control for densely packed InGaN-based nanocolumns and demonstration of independent drive of multicolor (RGBY) micro-LED array (Conference Presentation) (2018) (0)
- Influence of structural properties on emission mechanisms in InGaN nanocolumns (2016) (0)
- InGaN-Based Nanocolumn Optical Devices (2021) (0)
- 0.67-µm GaInAsP/AIGaAs planar-buried-heterostructure lasers grown on GaAs substrates by LPE (1986) (0)
- Strain relaxation effect by nano-pattern etching in InGaN/GaN quantum well structures grown by rf-plasma assisted molecular beam epitaxy. (2008) (0)
- Raman scattering from surface phonons in GaN nanostructures (2013) (0)
This paper list is powered by the following services:
Other Resources About Katsumi Kishino
What Schools Are Affiliated With Katsumi Kishino?
Katsumi Kishino is affiliated with the following schools:
