Kazumasa Hiramatsu

Kazumasa Hiramatsu's AcademicInfluence.com Rankings

Kazumasa Hiramatsu

Engineering

#6730

World Rank

#8070

Historical Rank

Materials Science

#395

World Rank

#399

Historical Rank

engineering Degrees

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Engineering

Kazumasa Hiramatsu's Degrees

PhD Materials Science University of Tokyo
Masters Materials Science University of Tokyo
Bachelors Materials Science University of Tokyo

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Kazumasa Hiramatsu's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) (1989) (1609)
Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE (1989) (591)
Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO) (2000) (358)
Selective growth of wurtzite GaN and AlxGa1-xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy (1994) (280)
Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy (1993) (270)
Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE (1991) (269)
Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III‐Nitrides: Effects of Reactor Pressure in MOVPE Growth (1999) (260)
Analysis of deep levels in n‐type GaN by transient capacitance methods (1994) (253)
The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer (1993) (236)
Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain (1992) (222)
Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate (1988) (217)
Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer (1992) (203)
Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED (1991) (201)
Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy (1993) (192)
Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing (2016) (176)
Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE (1990) (169)
Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer (1991) (166)
Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy (1995) (147)
Growth of single crystal GaN substrate using hydride vapor phase epitaxy (1990) (146)
Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire (2016) (143)
Deep levels in the upper band-gap region of lightly Mg-doped GaN (1996) (130)
Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy (1999) (125)
The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization (1997) (119)
Epitaxial lateral overgrowth techniques used in group III nitride epitaxy (2001) (108)
Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (11 2̄0) and (0001) Sapphire Substrates (1988) (107)
Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE (1991) (100)
Defect structure in selective area growth GaN pyramid on (111)Si substrate (2000) (83)
Electron beam effects on blue luminescence of zinc-doped GaN (1988) (81)
Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers (1994) (80)
Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy (1999) (80)
Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy (2013) (78)
The growth of thick GaN film on sapphire substrate by using ZnO buffer layer (1993) (75)
Vertical strain and doping gradients in thick GaN layers (1997) (75)
Preparation of AlxGa1-xN/GaN heterostructure by MOVPE (1990) (71)
Sharp band edge photoluminescence of high-purity CuInS2 single crystals (2001) (67)
The barrier height and interface effect of Au-n-GaN Schottky diode (1995) (61)
Formation of GaN Self-Organized Nanotips by Reactive Ion Etching (2001) (59)
Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films (2011) (58)
Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN (2011) (56)
Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy (1991) (53)
Selective Area Growth of GaN on Si Substrate Using SiO 2 Mask by Metalorganic Vapor Phase Epitaxy (1998) (53)
Photoluminescence of residual transition metal impurities in GaN (1995) (51)
The formation of crystalline defects and crystal growth mechanism in InxGa1−xN/GaN heterostructure grown by metalorganic vapor phase epitaxy (1998) (50)
High‐quality AlN epitaxial films on (0001)‐faced sapphire and 6H‐SiC substrate (2003) (49)
Metalorganic vapor phase epitaxy growth of (InxGa1-xN/GaN)n layered structures and reduction of indium droplets (1994) (48)
OPTICAL AND CRYSTALLINE PROPERTIES OF EPITAXIAL-LATERAL-OVERGROWN-GAN USING TUNGSTEN MASK BY HYDRIDE VAPOR PHASE EPITAXY (1999) (48)
Optical microscopy of electronic and structural properties of epitaxial laterally overgrown GaN (1999) (48)
Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams (2012) (47)
The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates (1994) (45)
Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells (2012) (42)
Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface (1996) (42)
MOVPE growth of GaN on a misoriented sapphire substrate (1991) (41)
MOVPE growth of thick homogeneous InGaN directly on sapphire substrate using AlN buffer layer (1997) (40)
Growth of Crack‐Free and High‐Quality AlGaN with High Al Content Using Epitaxial AlN (0001) Films on Sapphire (2002) (37)
A study on barrier height of AuAlxGa1 − xN Schottky diodes in the range 0 ≤ x ≤ 0.20 (1997) (37)
Hydride vapor-phase epitaxy growth of high-quality GaN bulk single crystal by epitaxial lateral overgrowth (1998) (36)
Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy (2017) (36)
Cross-sectional TEM study of microstructures in MOVPE GaN films grown on α-Al2O3 with a buffer layer of AlN (1991) (36)
The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPE (1996) (36)
Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle (2016) (35)
Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate (2012) (35)
Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy (2005) (35)
Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy (1998) (34)
Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets (2004) (34)
Dynamical study of the yellow luminescence band in GaN (1997) (32)
Reactor-pressure dependence of growth of a-plane GaN on r-plane sapphire by MOVPE (2008) (32)
Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy (1998) (31)
Zn related electroluminescent properties in MOVPE grown GaN (1988) (30)
Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier concentration of thick GaN samples (2000) (30)
The initial stage of LPE growth of InGaAsP on GaAs in the region of immiscibility (1986) (29)
Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition (2003) (28)
Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth (2001) (28)
The excitonic bandgap of GaN: Dependence on substrate (1997) (27)
Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy (2011) (27)
Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources (2013) (25)
Carrier-gas dependence of ELO GaN grown by hydride VPE (2002) (23)
Growth of Single Crystal AlxGa1-xN Films on Si Substrates by Metalorganic Vapor Phase Epitaxy (1993) (22)
TEM analysis of threading dislocations in crack‐free AlxGa1−xN grown on an AlN(0001) template (2003) (22)
Fabrication of high-crystallinity a-plane AlN films grown on r-plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions (2017) (22)
Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves (1999) (21)
Shallow donors in GaN: A magnetic double resonance investigation (1996) (21)
Characterization of GaN Based UV‐VUV Detectors in the Range 3.4–25 eV by Using Synchrotron Radiation (2001) (21)
Metalorganic vapor phase epitaxy growth and characteristics of Mg-doped GaN using GaN substrates (1994) (21)
Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE (2009) (20)
High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy (2014) (20)
Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction AlxGa1–xN multiple quantum wells grown by metalorganic vapor phase epitaxy (2015) (19)
High Quality GaN Grown by Facet‐Controlled ELO (FACELO) Technique (2002) (19)
Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns (2008) (19)
Fabrication of carbon nanotubes array and its field emission property (2003) (19)
Influence of off-cut angle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE (2009) (19)
Determination of Al molar fraction in AlxGa1-xN films by Raman scattering (2011) (18)
Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration (2014) (18)
Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy (2009) (18)
AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE (2012) (18)
Sub-micron fine structure of GaN by metalorganic vapor phase epitaxy (MOVPE) selective area growth (SAG) and buried structure by epitaxial lateral overgrowth (ELO) (1998) (18)
Photoluminescence study of Si-doped a-plane GaN grown by MOVPE (2009) (17)
Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy (1999) (17)
Selective Area Growth of GaN on Stripe‐Patterned (111)Si Substrate by Metalorganic Vapor Phase Epitaxy (1999) (17)
Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy (2000) (17)
Effect of strain on quantum efficiency of InAlN-based solar-blind photodiodes (2009) (17)
High temperature growth of AlN film by LP-HVPE (2007) (17)
Extraordinary Optical Transmission Exhibited by Surface Plasmon Polaritons in a Double-Layer Wire Grid Polarizer (2015) (16)
Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy (2009) (16)
Direct imaging of local strain relaxation along the side facets and the edges of hexagonal GaN pyramids by cathodoluminescence microscopy (1998) (16)
LPE Growth and Surface Morphology of InxGa1-xAsyP1-y (y≤0.01) on (100) GaAs (1984) (16)
Suppression of Crack Generation Using High-Compressive-Strain AlN/Sapphire Template for Hydride Vapor Phase Epitaxy of Thick AlN Film (2007) (16)
Local strain distribution of hexagonal GaN pyramids (1998) (16)
Field effect on thermal emission from the 0.40 eV electron level in InGaP (1993) (16)
Silicon concentration dependence of optical polarization in AlGaN epitaxial layers (2011) (15)
Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE (2009) (15)
MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer (2014) (15)
Control of AlN buffer/sapphire substrate interface for AlN growth (2011) (15)
Influence of growth interruption and Si doping on the structural and optical properties of AlxGaN/AlN (x>0.5) multiple quantum wells (2007) (14)
Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy (2000) (14)
Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectors in the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation (2001) (14)
Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substrates (2012) (14)
Fabrication of Binary Diffractive Lenses and the Application to LED Lighting for Controlling Luminosity Distribution (2013) (14)
A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high-AlN-mole-fraction AlxGa1−xN multiple quantum wells (2016) (14)
Effects of carrier gas ratio and growth temperature on MOVPE growth of AlN (2012) (14)
Deep levels in InxGa1-xAsyP1-y grown on (100) GaAs by LPE (1989) (14)
Detecting High-Refractive-Index Media Using Surface Plasmon Sensor with One-Dimensional Metal Diffraction Grating (2016) (14)
Characterization of mid-gap states in HVPE and MOVPE-grown n-type GaN (1998) (14)
Influence of growth conditions on al incorporation to AlxGa1- xN (x>0.4) grown by MOVPE (2007) (13)
High performance Schottky UV detectors (265-100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer (2003) (13)
Time-resolved microphotoluminescence of epitaxial laterally overgrown GaN (1999) (13)
Selective growth of carbon nanotubes on silicon protrusions (2004) (13)
Effect of Lattice Mismatch on Electric Properties near Heterointerface of InxGa1-xAsyP1-y(y<0.01)/(100) GaAs (1988) (13)
Behavior of Threading Dislocations in SAG‐GaN Grown by MOVPE (2000) (12)
GaN-based Schottky barrier photodetectors from near ultraviolet to vacuum ultraviolet (360-50 nm) (2003) (12)
Facets formation mechanism of GaN hexagonal pyramids on dot-patterns via selective MOVPE (1995) (12)
Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System (1985) (12)
Influence of Ambient Gas on the Epitaxial Lateral Overgrowth of GaN by Metalorganic Vapor Phase Epitaxy (1999) (11)
Selective Area Growth of GaN by MOVPE and HVPE (1997) (11)
Using surface-plasmon polariton at the GaP-Au interface in order to detect chemical species in high-refractive-index media (2015) (11)
Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer (2003) (11)
Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0 0 0 1) sapphire (2009) (11)
Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates (2001) (11)
Field Emission from GaN Self-Organized Nanotips (2002) (11)
Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy (2010) (11)
Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiscibility (1993) (11)
Epitaxial lateral overgrowth of GaN on selected-area Si(1 1 1) substrate with nitrided Si mask (2003) (10)
Antireflection Effect of Self-Organized GaN Nanotip Structure from Ultraviolet to Visible Region (2002) (10)
Electron microscopy analysis of microstructure of postannealed aluminum nitride template (2016) (10)
Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template (2013) (10)
HVPE growth of AlN on trench- patterned 6H-SiC substrates (2011) (10)
Cathodoluminescence of MOVPE-grown GaN layer on α-Al2O3 (1990) (10)
Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thick a-plane AlN films grown on r-plane sapphire substrates (2016) (10)
Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H2 and N2 (2002) (10)
Huge binding energy of localized biexcitons in Al-rich AlxGa1―xN ternary alloys (2011) (10)
Optical characterisation of GaN and related materials (1997) (10)
Gain Spectroscopy of HVPE-Grown GaN (1997) (10)
In-plane structural anisotropy and polarized Raman-active mode studies of nonpolar AlN grown on 6H-SiC by low-pressure hydride vapor phase epitaxy (2010) (9)
High quality GaN grown by raised-pressure HVPE (2002) (9)
AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy (2013) (9)
Binding energy of localized biexcitons in AlGaN-based quantum wells (2013) (9)
Selective-area growth of GaN on non- and semi-polar bulk GaN substrates (2014) (9)
Fabrication and Optical Characterization of Facet‐Controlled ELO (FACELO) GaN by LP‐MOVPE (2001) (9)
Observation of longitudinal-optic-phonon-plasmon-coupled mode in n-type AlGaN alloy films (2011) (9)
Growth of undoped and Zn-doped GaN nanowires (2009) (9)
Optical properties of MOVPE-grown a-plane GaN and AlGaN (2009) (9)
Fabrication of a binary diffractive lens for controlling the luminous intensity distribution of LED light (2009) (8)
Selective Area Etching of GaN and AlGaN by Thermally Chemical Reaction in Hydrogen Ambient (1997) (8)
Effect of lattice mismatch between epitaxial layer and substrate on immiscibility of InGaAsP/GaAs LPE layers (1988) (8)
X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO) (2003) (8)
Characterization of GaN based Schottky UV detectors in the vacuum UV (VUV) and the soft X‐ray (SX) region (10–100 nm) (2003) (8)
Blue emission from InGaN/GaN hexagonal pyramid structures (2007) (8)
Correlation between in-plane strain and optical polarization of Si-doped AlGaN epitaxial layers as a function of Al content and Si concentration (2012) (8)
Depth Profile of the Excitonic Luminescence in Gallium-Nitride Layers (1996) (7)
New dopant precursors for n-type and p-type GaN (1997) (7)
Raman scattering study of to phonon modes in InGaAsP/GaAs (1994) (7)
Growth of InGaP epitaxial layers by liquid phase electro-epitaxy (1991) (7)
Microscopic crystalline structure of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template (2015) (7)
In Situ Monitoring of GaN Reactive Ion Etching by Optical Emission Spectroscopy (2001) (7)
HVPE growth of thick AlN on trench‐patterned substrate (2011) (7)
Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE (2012) (7)
Growth of crack-free AlGaN on selective-area-growth GaN (2008) (7)
In-plane electric field induced by polarization and lateral photovoltaic effect in a-plane GaN (2009) (7)
Cathodoluminescence Study of Optical Inhomogeneity in Si-Doped AlGaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor-Phase Epitaxy (2013) (6)
a ‐plane AlN and AlGaN growth on r ‐plane sapphire by MOVPE (2010) (6)
High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells (2017) (6)
Fine Structure And Magnetooptics Of Excitonic Levels In Wurtzite GaN (1997) (6)
Microstructures of two-step facet-controlled ELO-GaN grown by MOVPE method—effect of mask geometry (2002) (6)
Vacuum ultraviolet ellipsometer using inclined detector as analyzer to measure stokes parameters and optical constants — With results for AlN optical constants (2014) (6)
Transient photoluminescence of aluminum‐rich (Al,Ga)N low‐dimensional structures (2014) (6)
Epitaxial lateral overgrowth of GaN structures : spatially resolved characterization by cathodoluminescence microscopy and micro-Raman spectroscopy (1999) (6)
Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen (111) (2010) (6)
Fabrication of thick AlN film by low pressure hydride vapor phase epitaxy (2006) (6)
Excitation mechanism of surface plasmon polaritons in a double-layer wire grid structure (2017) (6)
Photoluminescence and optical gain in highly excited GaN (1997) (6)
HVPE growth of c‐plane AlN on a‐plane sapphire using nitridation layer (2011) (6)
Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations (2016) (6)
Selective dynamical study of luminescences near the surface and the interface of epitaxial GaN (1995) (6)
Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates (2013) (6)
Properties of GaN grown on Si(111) substrates dependent on the thickness of 3C-SiC intermediate layers (2014) (6)
LPE growth of InGaP/InGaAsP multiple thin layers on (111)A GaAs substrates (1989) (6)
Recombination dynamics of localized excitons in AlxGa1-xN (0.37 (2011) (5)
Selective Area Growth of Semipolar (202̄1) and (202̄1̄) GaN Substrates by Metalorganic Vapor Phase Epitaxy (2013) (5)
Effect of surface pretreatment of r-plane sapphire substrates on the crystal quality of a-plane AlN (2016) (5)
Analysis of Disorder Scattering in Ga0.47In0.53As Using Gaussian Potential (1983) (5)
Distribution of Horizontal Dislocations in ELO-GaN (2002) (5)
Fabrication of Binary Diffractive Lens on Optical Films by Electron Beam Lithography (2011) (5)
Microstructural analysis of an epitaxial AlN thick film/trench-patterned template by three-dimensional reciprocal lattice space mapping technique (2016) (5)
Effects of initial conditions and growth temperature on the properties of nonpolar a ‐plane AlN grown by LP‐HVPE (2009) (5)
Variation of Surface Potentials of Si-Doped AlxGa1-xN (0 < x < 0.87) Grown on AlN/Sapphire Template by Metal–Organic Vapor Phase Epitaxy (2010) (5)
n‐type conductivity control of AlGaN with high Al mole fraction (2006) (5)
Fabrication of perfect plasmonic absorbers for blue and near-ultraviolet lights using double-layer wire-grid structures (2021) (5)
Excitation‐dependent carrier dynamics in Al‐rich AlGaN layers and multiple quantum wells (2015) (5)
Behaviour of anion vacancy in InxGa1-xAsyP1-y grown on (111)A and (100) GaAs (1990) (5)
Characterization of high-quality epitaxial AlN films grown by MOVPE (2001) (5)
GaN layer structures with buried tungsten nitrides (WNx) using epitaxial lateral overgrowth via MOVPE (2001) (5)
Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis (1985) (5)
Improved surface morphology of flow-modulated MOVPE grown AIN on sapphire using thin medium-temperature AIN buffer layer (2007) (5)
Si concentration dependence of structural inhomogeneities in Si-doped AlxGa1−xN/AlyGa1−yN multiple quantum well structures (x = 0.6) and its relationship with internal quantum efficiency (2014) (5)
Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions (2010) (5)
Strain control of GaN grown on 3C-SiC/Si substrate using AlGaN buffer layer (2012) (5)
Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via Metalorganic Vapor-Phase Epitaxy (MOVPE) (1998) (5)
Photoluminescence due to Inelastic Biexciton Scattering from an Al0.61Ga0.39N Ternary Alloy Epitaxial Layer at Room Temperature (2012) (5)
Influence of Si doping on the optical and structural properties of InGaN films (2006) (5)
Influence of etching condition on surface morphology of AlN and GaN layers (2004) (5)
Reduction of dislocation density of aluminium nitride buffer layer grown on sapphire substrate (2016) (4)
Observation of Midgap States in GaN with Optical-Isothermal Capacitance Transient Spectroscopy (1996) (4)
Evidence for moving of threading dislocations during the VPE growth in GaN thin layers (2011) (4)
HVPE homoepitaxy on freestanding AlN substrate with trench pattern (2015) (4)
Lattice-Mismatch-Induced Deep Level in InxGa1-xAsyP1-y (0≦y≦0.41) Grown on (100) GaAs (1989) (4)
Excitation and deexcitation dynamics of excitons in a GaN film based on the analysis of radiation from high-order states (2016) (4)
Study on the effects of AlN interlayer in thick GaN grown on 3C-SiC/Si substrates (2013) (4)
Fundamental Properties of Wide Bandgap Semiconductors (2007) (4)
Growth control of carbon nanotubes by plasma-enhanced chemical vapor deposition and reactive ion etching (2006) (4)
Improved optical properties using self-organized GaN nanotip structure (2003) (4)
Influence of Ge and Si on Reactive Ion Etching of GaN in Cl2 Plasma (2002) (4)
Synthesis of III‐nitride microcrystals using metal‐EDTA complexes (2007) (4)
Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask (2000) (3)
Surface thermal stability of free-standing GaN substrates (2015) (3)
Time-resolved micro-photoluminescence of epitaxial laterally overgrown GaN (2000) (3)
in Properties, Processing and Applications of Gallium Nitride and Related Semiconductors (1999) (3)
Time-resolved nonlinear luminescence of excitonic transitions in GaN (2004) (3)
Effects of Si doping in high-quality AlN grown by MOVPE on trench-patterned template (2013) (3)
Impact of the ZnO buffer on the optical properties of GaN: time resolved micro-photoluminescence (1999) (3)
Enhanced emission efficiency of InGaN films with Si doping (2006) (3)
Crack‐free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC intermediate layer (2014) (3)
Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular‐striped AlN/sapphire template (2014) (3)
TEM analysis of threading dislocations in ELO-GaN grown with controlled facet planes (2000) (3)
THM Growth of Bulk CuInTe2 Single Crystals from In Solution (2000) (2)
Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter (1988) (2)
Fabrication and characterization of a binary diffractive lens for controlling focal distribution. (2020) (2)
Review of Facet Controlled Epitaxial Lateral Overgrowth (FACELO) of GaN via Low Pressure Vapor Phase Epitaxy (2000) (2)
Reaction Route of GaN Powder Formation via Sintering Gallium Ethylenediamine Tetraacetic Acid Complexes in Ammonia (2007) (2)
Formation of horizontal dislocations in epitaxially lateral overgrown (ELO) GaN (2001) (2)
Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction (2018) (2)
Enhancement of blue emission from Mg‐doped GaN activated at low temperature in O2/N2 mixture (2006) (2)
Fabrication of GaN layer with Low Dislocation Density using Facet controlled ELO technique (2000) (2)
Growth characteristics of carbon nanotubes on nanotip-formed substrate (2006) (2)
Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0.61Ga0.39N Epitaxial Layer (2018) (2)
Growth and characterization of InGaAs bulk crystals grown by liquid phase electro-epitaxy (1993) (2)
Nanoindentation hardness and elastic modulus of AlGaN alloys (2013) (2)
Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (Elo) of GaN Using Tungsten Mask (1998) (2)
Fabrication of position-controlled InN nanocolumns by ECR-MBE (2009) (2)
Spatially resolved investigations of the excitonic luminescence in GaN (1997) (2)
Structural study of GaN grown on nonpolar bulk GaN substrates with trench patterns (2017) (2)
Effects of buffer layers and advanced technologies on heteroepitaxy of GaN (2001) (2)
Deep center scattering potential in InGaP (1994) (1)
Cathodoluminescence study on local high-energy emissions at dark spots in AlGaN/AlGaN multiple quantum wells (2018) (1)
A verification of immiscibility in InGaAsP quaternary alloys (1988) (1)
Growth Characteristics of Carbon Nanotubes on Oxidized Catalyst under Low-Pressure Condition (2012) (1)
Confinement-enhanced biexciton binding energy in AlGaN-based quantum wells (2017) (1)
Fabrication and optical characterization of a 2D metal periodic grating structure for cold filter application (2015) (1)
Electron microscope study of modulated structures and heterointerfaces in LPE-grown GaInAsP layers lattice-matched on GaAs (1989) (1)
Growth of high‐quality GaN on FACELO substrate by raised‐pressure HVPE (2003) (1)
Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer (2004) (1)
Improved surface morphology of flow‐modulated MOVPE grown AlN on sapphire using thin medium‐temperature AlN buffer layer (2008) (1)
Fabrication and characterization of UV Schottky detectors by using a freestanding GaN substrate (2004) (1)
MOVPE growth and n‐type conductivity control of high‐quality Si‐doped Al0.5Ga0.5N using epitaxial AlN as an underlying layer (2003) (1)
Study on the influence of different trench-patterned templates on the crystalline microstructure of AlN epitaxial films by X-ray microdiffraction (2017) (1)
Conductivity measurements on GaN grown by OMVPE and HVPE (1995) (1)
Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates (2017) (1)
Time-resolved microphotoluminescence of epitaxial laterally overgrown (1999) (1)
The Relationship between the Bending Direction and Burgers Vector of Threading Dislocations at a Coherent Heterointerface in AlGaN/AlN Layers (2007) (1)
Oxygen in InxGa1-xAsyP1-y Grown on GaAs (1992) (1)
Dependence of In mole fraction in InGaN on GaN facets (2007) (1)
Effect of Ge in Cl 2 Plasma for Reactive Ion Etching of GaN (2001) (1)
Influence of Ge and Si on Reactive Ion Etching of GaN in Cl_2 Plasma : Semiconductors (2002) (1)
Improved-Brooks Mobility Formula for Disorder Scattering in Semiconductor Alloys (1983) (1)
Thermal analysis of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia (2008) (1)
Corrigendum to “Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template” [J. Cryst. Growth 381 (2013) 37–42, doi: 10.1016/j.jcrysgro.2013.07.012] (2014) (1)
Electrical properties and electroluminescence of GaN:Mg blue Light Emitting Diodes (1998) (1)
Interaction of the dual effects triggered by AlN interlayers in thick GaN grown on 3C-SiC/Si substrates (2012) (1)
Antireflection structure of self-organized GaN nanotips (2002) (1)
Simulation of InGaP Liquid Phase Epitaxy Including Convection (2006) (1)
Spatio-time-resolved cathodoluminescence study on high AlN mole fraction AlxGa1−xN structures grown by metalorganic vapor phase epitaxy (2016) (1)
Improved optical properties of AlGaN using periodic structures (2008) (1)
Growth of carbon nanotubes on silicon nano-protrusions (2005) (1)
Fabrication and Optical Characterization of the Au Two-Dimensional Diffraction Grating Having Sub-Wavelength Structures (2016) (0)
Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE (2007) (0)
Effects of AlN buffer layer on growth of AlGaN multiple quantum wells (2016) (0)
Face-to-face annealing of AlN films grown by MOVPE (2017) (0)
AlN growth on Sapphire substrate by HVPE with RF heating system (2016) (0)
Temperature dependence of Stokes shifts of excitons and biexcitons in Al 0.61 Ga 0.39 N ternary alloy epitaxial layers (2016) (0)
Study on the Chemical Sensor Using Excitation of the Surface Plasmon Polariton with the GaP-Au Contact (2013) (0)
Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range. (2012) (0)
Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy (1993) (0)
Concentration of Deep Level in InxGa1-xAsyP1-y Grown on (100) GaAs by LPE (1989) (0)
Growth of High Quality c-plane AlN on a-plane Sapphire (2009) (0)
Optical Characterization of Japanese Papers LED Lighting System with Human SenSitivity for Application in the (2008) (0)
Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model (2007) (0)
Growth Characteristics of Graphene Film by Chemical Vapor Deposition Method Using Nozzle Gas Injection (2015) (0)
Symposium Y: GaN and Related Alloys (2004) (0)
A method and apparatus for growing gallium nitride from the vapor phase (1988) (0)
Thickness dependence of buffer layer on a-plane AlN grown on r-plane sapphire (2016) (0)
Annealing of sputtering AlN film and homoepitaxy on the AlN by HVPE (2017) (0)
Space control and optics properties evaluation of the Double-Layer 2D Metal Grating Structure (2016) (0)
Fabrication and characterization of a binary diffractive lens for controlling the focal length and depth of focus (2017) (0)
Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_ As_yP_ (y<0.01)/(100) GaAs : Optical Properties of Condensed Matter (1988) (0)
Effect of an AlN Buffer Layer on AlGaN/α-A1_2O_3 Heteroepitaxial Growth by MOVPE (1987) (0)
Self-organized GaN nanotips for cold cathode application (2002) (0)
Excitation processes of electron-exciton system by phonon absorption and emission (2016) (0)
Compositional Inhomogeneity of InGaAsP/GaAs LPE Layer by Precision X-Ray Diffractometry (1984) (0)
Growth of Single Crystal Al_xGa_ N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy (1993) (0)
In-depth microstrucutral analysis of an AlN thick film grown on a trench-patterned template using nanobeam X-ray diffraction (2017) (0)
Infrared absorption efficiency in AlAs/AlxGa1-xAs type-II multiple-quantum-well structure grown on (211) GaAs substrate (2000) (0)
Effects of the Schottky electrode structure in GaN based UV-VUV (50-360 nm) photodetector (2001) (0)
Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectorsin the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation : Semiconductors (2001) (0)
Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE (2000) (0)
Selective area growth of GaN using tungsten mask (1998) (0)
Polarization Inverted AlN Fabricated by Face to Face Annealing for QPM-SHG (2017) (0)
Final Report for AOARD Grant #114013 (FA2386-11-1-4013) “Investigation and characterization of defects in epitaxial films for ultraviolet light emitting devices using FUV time-resolved photoluminescence, time-resolved cathodoluminescence, and spatio-time-resolved cathodoluminescence excited using fe (2013) (0)
Detection of high-refractive index media by a surface plasmon sensor using a one-dimensional metal diffraction grating (2015) (0)
Coulomb blockade phenomena in Si MOSFETs with nano-scale channels fabricated by focused-ion beam implantation (1999) (0)
[Young Scientist Presentation Award Speech] Characterization of crystalline structure in nitride semiconductors by three-dimensional reciprocal space mapping using X-ray microdiffraction (2016) (0)
Epitaxial lateral overgrowth of GaN on trench patterned (10-10) bulk GaN substrates (2017) (0)
AlN deposition on Sapphire substrate by sputtering (2017) (0)
Considering the Origin of Surface Plasmon Polaritons for a Surface Plasmon Sensor with 1D Metal Grating Structure and Characterization of Sensitivity (2018) (0)
Measurement of the defect distribution of an InGaAsP/GaAs heterojunction diode by LBIC (1987) (0)
Surface treatment and homoepitaxial growth on AlN substrate (2014) (0)
MOVPE method of producing a buffer layer with a mixture of single crystal and amorphous state (1990) (0)
Selective Area Growth of III-Nitride and Their Application for Emitting Devices (2008) (0)
The excitation of the surface plasmon polariton with the GaP-Au contact and application to chemical sensors (2013) (0)
Facet-control in selective area growth (SAG) of a-plane GaN by MOVPE (2009) (0)
Deep level characterization of MOVPE-grown AlGaN with high Al compositions (2010) (0)
Optical Properties of Semiconductors with Nanotips Structure (2008) (0)
Spatially-resolved photoluminescence and Raman study on the GaN/substrate interface (1995) (0)
Raman scattering study of InGaN ternary alloys grown by MOVPE on (0001) sapphire substrates (2000) (0)
Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE (1999) (0)
Dependence of Double-layer Wire Grid Structure on the Period and Wavelength by Using Ag (2017) (0)
Characterization of III-nitride Based Schottky UV Detectors with Wide Detectable Wavelength Range (360–10 nm) using Synchrotron Radiation (2003) (0)
Atomic-steps formation of c-plane sapphire by air annealing for AlN growth (2016) (0)
Galliumnitridartige compound semiconductor light-emitting device and consisting thereof and processes for their manufacture. (1988) (0)
A designing strategy for achieving an overlap integral of electron and hole wavefunctions higher than 90% in AlGaN multiple quantum wells (2016) (0)
Effects of buffer layers in heteroepitaxy of gallium nitride (1999) (0)
THM Growth of Ternary and Multinary Chalcopyrite Semiconductors (2000) (0)
Erratum: “Observation of longitudinal-optic-phonon-plasmon-coupled mode in n-type AlGaN alloy films” [Appl. Phys. Lett. 99, 251904 (2011)] (2012) (0)
Study on AlN growth conditions for hydride vapor phase epitaxy (2015) (0)
Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices) (2010) (0)
Fabrication of AlGaN multiple quantum wells on sapphire with lattice‐relaxation layer (2015) (0)
Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth : Semiconductors (2001) (0)
Detecting High-refractive-index (n>1.5) Media using Surface Plasmon Sensor with One-dimensional Au Diffraction Grating on Glass Substrate (2016) (0)
The dependence of Surface Plasmon Sensor Using the One-Dimensional Metal Diffraction Grating on Its Period and the Incident Angle (2016) (0)
Epitaxial Growth of III-Nitrides with Low Dislocations (2002) (0)
Local Strain Distribution in AlN Thick Films Analyzed by X-Ray Microdiffraction (2014) (0)
TEM observation of GaN pyramid grown selectivel on Si using AlGaN (2000) (0)
Binding energy of biexcitons in AlGaN-based quantum wells -Dependence on alloy composition in ternary barrier layers- (2016) (0)
Dependence of Double-layer Wire Grid Structure on the Incident Angle by Using Ag (2017) (0)
Simulation of Liquid Phase Epitaxy considering two dimensional flow (2006) (0)
The Non-Propagation Mode of the Surface Plasmon Resonance in the Metal Grating Structure (2020) (0)
Stress analysis of a-plane GaN grown on r-plane sapphire substrates (2011) (0)
Microscopic crystalline structure of a thick AlN film grown on a trench-patterned SiC template by three dimensional reciprocal space mapping (2016) (0)
III-V semiconductors and process for its preparation (2001) (0)
Cathodoluminescence study on local emission around dislocations in AlGaN multiple quantum well structures (2018) (0)
Study of Plant Cultivation Using a Light-Emitting Diode Illumination System to Control the Spectral Irradiance Distribution (2017) (0)
Multilayer substrate group 3-5 nitride semiconductor, method for producing a self-supporting substrate of a group 3-5 nitride semiconductor and semiconductor element (2006) (0)
A study of deep levels in bulk CuInSe2 grown by THM METHOD (2000) (0)
Antireflection Effect of Self-OOrganized GaN Nanotip Structure from Ultraviolet to Visible Region : Semiconductors (2002) (0)
MOVPE growth of GaN and AlxGa1-xN and their luminescence and electrical properties (1991) (0)
MOVPE growth and characterization of AlGaN with high AlN molar fraction using epitaxial AlN/Sapphire substrate (2002) (0)
The controlling of transmittance and reflectance of a 2D metal periodic grating structure for cold filter application (2016) (0)
of the same gallium nitride single crystal substrate and method for producing (2004) (0)
The influence of Si doping to high Al mole fraction AlGaN (2005) (0)
High-temperature annealing of AlN on sapphire using face-to-face method (Conference Presentation) (2018) (0)
Temperature dependence of excitonic optical transitions in AlGaN-based quantum well structures (2017) (0)
Spatially resolved cathodoluminescence study of selected-area ELO-GaN grown on Si(111) substrates (2003) (0)
New buffer layer technique using underlying epitaxial AlN films for high-quality GaN growth (2001) (0)
Low-dislocation-density GaN and AlGaN using epitaxial-lateral-overgrowth methods (2004) (0)
Growth temperature dependence of buffer-layer on a-plane AlN grown on r-plane sapphire (2016) (0)
Schottky Barrier on n-Type Al0.14Ga0.86N Grown by Organometalic Vapor Phase Epitaxy (1995) (0)
Optical characterization of c -plane AlGaN multiple quantum wells with enhanced overlap integral of electron and hole wavefunctions by the quadratic compositional modulation (2017) (0)
Annealing Effects of CuInS2 Single Crystals Grown by Traveling Heater Method (2000) (0)
Effects of Buffer Layer in MOVPE Growth of GaN Film on Sapphire Substrate (1989) (0)
Optical Characterization of Japanese Papers for Application in the LED Lighting System with Human Sensitivity (2008) (0)
Fabrication of Polarization Control Devices using Metal Grating Structures (2021) (0)
Vapor phase epitaxial device composite semiconductors (1993) (0)
Control of height and density of GaN nano-structure and its antireflection and enhanced transmission properties (2003) (0)
Excitation mechanism of surface plasmon polaritons in a double-layer wire grid structure (2017) (0)
Study on design and fabrication of the plasmonic wave plate using Ag wire grid structure (2018) (0)
Nitride Semiconductor Surfaces. Epitaxial Growth and Dislocation Formation in Crystals of Nitride Semiconductors. (2000) (0)
Formation mechanism of Al‐depleted bands in MOVPE‐AlGaN layer on GaN template with trenches (2010) (0)
Spatio-time-resolved cathodoluminescence studies on the Si-doping effects in high AlN mole fraction AlxGa1−xN multiple quantum wells grown on an AlN template by metalorganic vapor phase epitaxy (2015) (0)
Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter (2001) (0)
The Sensitivity Evaluation of Surface Plasmon Sensor Using the One-Dimensional Metal Diffraction Grating (2017) (0)
Gallium nitride semiconductor Lumisneszenzdiode as well as methods for their preparation. (1988) (0)
cuum-ultra Violet Reflectance Spectroscopy of Strongly Correlated Electron System (2013) (0)
Fabrication and characterization of plasmonic band-stop filter using Ag grating (2020) (0)
Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H_2 and N_2(Semiconductors) (2002) (0)
Crystal Growth is the Ultimate Technology : Expecting the New Japanese Association for Crystal Growth (2006) (0)
Materials Science and Engineering B: Solid State Materials for Advanced Technology : Preface (2001) (0)
Fabrication of Schottky UV photodetector based on Al_ Ga_ N and its spectral responsivity (2003) (0)
Solution Growth of CuGaxIn1-xSe2 from CuSe Solutions (2000) (0)
Polarization Property of a Double-layer Wire Grid Polarizer and the Mechanism of Transmission (2015) (0)
Responsivity and electrical characteristics of GaN based Schottky barrier UV detectors with transparent electrode in the near UV and VUV region (2002) (0)
Fabrication of perfect plasmonic absorbers for blue and near-ultraviolet lights using double-layer wire-grid structures (2021) (0)
Raman scattering study of the immiscible region in InGaAsP grown by LPE on (100) and (111) GaAs (1996) (0)

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What Schools Are Affiliated With Kazumasa Hiramatsu?

Kazumasa Hiramatsu is affiliated with the following schools: