Kazumasa Hiramatsu
#158,479
Most Influential Person Now
Kazumasa Hiramatsu's AcademicInfluence.com Rankings
Kazumasa Hiramatsuengineering Degrees
Engineering
#6730
World Rank
#8070
Historical Rank
Materials Science
#395
World Rank
#399
Historical Rank

Download Badge
Engineering
Kazumasa Hiramatsu's Degrees
- PhD Materials Science University of Tokyo
- Masters Materials Science University of Tokyo
- Bachelors Materials Science University of Tokyo
Why Is Kazumasa Hiramatsu Influential?
(Suggest an Edit or Addition)Kazumasa Hiramatsu's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) (1989) (1609)
- Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE (1989) (591)
- Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO) (2000) (358)
- Selective growth of wurtzite GaN and AlxGa1-xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy (1994) (280)
- Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy (1993) (270)
- Growth mechanism of GaN grown on sapphire with A1N buffer layer by MOVPE (1991) (269)
- Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III‐Nitrides: Effects of Reactor Pressure in MOVPE Growth (1999) (260)
- Analysis of deep levels in n‐type GaN by transient capacitance methods (1994) (253)
- The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer (1993) (236)
- Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain (1992) (222)
- Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate (1988) (217)
- Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer (1992) (203)
- Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED (1991) (201)
- Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy (1993) (192)
- Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing (2016) (176)
- Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE (1990) (169)
- Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer (1991) (166)
- Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase Epitaxy (1995) (147)
- Growth of single crystal GaN substrate using hydride vapor phase epitaxy (1990) (146)
- Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire (2016) (143)
- Deep levels in the upper band-gap region of lightly Mg-doped GaN (1996) (130)
- Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy (1999) (125)
- The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization (1997) (119)
- Epitaxial lateral overgrowth techniques used in group III nitride epitaxy (2001) (108)
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (11 2̄0) and (0001) Sapphire Substrates (1988) (107)
- Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPE (1991) (100)
- Defect structure in selective area growth GaN pyramid on (111)Si substrate (2000) (83)
- Electron beam effects on blue luminescence of zinc-doped GaN (1988) (81)
- Infrared luminescence of residual iron deep level acceptors in gallium nitride (GaN) epitaxial layers (1994) (80)
- Effects of Reactor Pressure on Epitaxial Lateral Overgrowth of GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy (1999) (80)
- Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy (2013) (78)
- The growth of thick GaN film on sapphire substrate by using ZnO buffer layer (1993) (75)
- Vertical strain and doping gradients in thick GaN layers (1997) (75)
- Preparation of AlxGa1-xN/GaN heterostructure by MOVPE (1990) (71)
- Sharp band edge photoluminescence of high-purity CuInS2 single crystals (2001) (67)
- The barrier height and interface effect of Au-n-GaN Schottky diode (1995) (61)
- Formation of GaN Self-Organized Nanotips by Reactive Ion Etching (2001) (59)
- Raman Scattering Spectroscopy of Residual Stresses in Epitaxial AlN Films (2011) (58)
- Fabrication of Deep-Ultraviolet-Light-Source Tube Using Si-Doped AlGaN (2011) (56)
- Growth of Si-doped AlxGa1–xN on (0001) sapphire substrate by metalorganic vapor phase epitaxy (1991) (53)
- Selective Area Growth of GaN on Si Substrate Using SiO 2 Mask by Metalorganic Vapor Phase Epitaxy (1998) (53)
- Photoluminescence of residual transition metal impurities in GaN (1995) (51)
- The formation of crystalline defects and crystal growth mechanism in InxGa1−xN/GaN heterostructure grown by metalorganic vapor phase epitaxy (1998) (50)
- High‐quality AlN epitaxial films on (0001)‐faced sapphire and 6H‐SiC substrate (2003) (49)
- Metalorganic vapor phase epitaxy growth of (InxGa1-xN/GaN)n layered structures and reduction of indium droplets (1994) (48)
- OPTICAL AND CRYSTALLINE PROPERTIES OF EPITAXIAL-LATERAL-OVERGROWN-GAN USING TUNGSTEN MASK BY HYDRIDE VAPOR PHASE EPITAXY (1999) (48)
- Optical microscopy of electronic and structural properties of epitaxial laterally overgrown GaN (1999) (48)
- Native cation vacancies in Si-doped AlGaN studied by monoenergetic positron beams (2012) (47)
- The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates (1994) (45)
- Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells (2012) (42)
- Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface (1996) (42)
- MOVPE growth of GaN on a misoriented sapphire substrate (1991) (41)
- MOVPE growth of thick homogeneous InGaN directly on sapphire substrate using AlN buffer layer (1997) (40)
- Growth of Crack‐Free and High‐Quality AlGaN with High Al Content Using Epitaxial AlN (0001) Films on Sapphire (2002) (37)
- A study on barrier height of AuAlxGa1 − xN Schottky diodes in the range 0 ≤ x ≤ 0.20 (1997) (37)
- Hydride vapor-phase epitaxy growth of high-quality GaN bulk single crystal by epitaxial lateral overgrowth (1998) (36)
- Effect of thermal annealing on AlN films grown on sputtered AlN templates by metalorganic vapor phase epitaxy (2017) (36)
- Cross-sectional TEM study of microstructures in MOVPE GaN films grown on α-Al2O3 with a buffer layer of AlN (1991) (36)
- The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPE (1996) (36)
- Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle (2016) (35)
- Microstructure of AlN Grown on a Nucleation Layer on a Sapphire Substrate (2012) (35)
- Growth of Thick AlN Layer by Hydride Vapor Phase Epitaxy (2005) (35)
- Hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy (1998) (34)
- Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets (2004) (34)
- Dynamical study of the yellow luminescence band in GaN (1997) (32)
- Reactor-pressure dependence of growth of a-plane GaN on r-plane sapphire by MOVPE (2008) (32)
- Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy (1998) (31)
- Zn related electroluminescent properties in MOVPE grown GaN (1988) (30)
- Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier concentration of thick GaN samples (2000) (30)
- The initial stage of LPE growth of InGaAsP on GaAs in the region of immiscibility (1986) (29)
- Photoluminescence of Mg-doped GaN grown by metalorganic chemical vapor deposition (2003) (28)
- Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth (2001) (28)
- The excitonic bandgap of GaN: Dependence on substrate (1997) (27)
- Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy (2011) (27)
- Growth and Characterization of AlGaN Multiple Quantum Wells for Electron-Beam Target for Deep-Ultraviolet Light Sources (2013) (25)
- Carrier-gas dependence of ELO GaN grown by hydride VPE (2002) (23)
- Growth of Single Crystal AlxGa1-xN Films on Si Substrates by Metalorganic Vapor Phase Epitaxy (1993) (22)
- TEM analysis of threading dislocations in crack‐free AlxGa1−xN grown on an AlN(0001) template (2003) (22)
- Fabrication of high-crystallinity a-plane AlN films grown on r-plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions (2017) (22)
- Crystal Orientation Fluctuation of Epitaxial-Lateral-Overgrown GaN with W Mask and SiO2 Mask Observed by Transmission Electron Diffraction and X-Ray Rocking Curves (1999) (21)
- Shallow donors in GaN: A magnetic double resonance investigation (1996) (21)
- Characterization of GaN Based UV‐VUV Detectors in the Range 3.4–25 eV by Using Synchrotron Radiation (2001) (21)
- Metalorganic vapor phase epitaxy growth and characteristics of Mg-doped GaN using GaN substrates (1994) (21)
- Effects of initial stages on the crystal quality of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE (2009) (20)
- High-quality AlN growth on 6H-SiC substrate using three dimensional nucleation by low-pressure hydride vapor phase epitaxy (2014) (20)
- Reduction in the concentration of cation vacancies by proper Si-doping in the well layers of high AlN mole fraction AlxGa1–xN multiple quantum wells grown by metalorganic vapor phase epitaxy (2015) (19)
- High Quality GaN Grown by Facet‐Controlled ELO (FACELO) Technique (2002) (19)
- Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns (2008) (19)
- Fabrication of carbon nanotubes array and its field emission property (2003) (19)
- Influence of off-cut angle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE (2009) (19)
- Determination of Al molar fraction in AlxGa1-xN films by Raman scattering (2011) (18)
- Inhomogeneous distribution of defect-related emission in Si-doped AlGaN epitaxial layers with different Al content and Si concentration (2014) (18)
- Nitridating r-plane sapphire to improve crystal qualities and surface morphologies of a-plane GaN grown by metalorganic vapor phase epitaxy (2009) (18)
- AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPE (2012) (18)
- Sub-micron fine structure of GaN by metalorganic vapor phase epitaxy (MOVPE) selective area growth (SAG) and buried structure by epitaxial lateral overgrowth (ELO) (1998) (18)
- Photoluminescence study of Si-doped a-plane GaN grown by MOVPE (2009) (17)
- Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy (1999) (17)
- Selective Area Growth of GaN on Stripe‐Patterned (111)Si Substrate by Metalorganic Vapor Phase Epitaxy (1999) (17)
- Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy (2000) (17)
- Effect of strain on quantum efficiency of InAlN-based solar-blind photodiodes (2009) (17)
- High temperature growth of AlN film by LP-HVPE (2007) (17)
- Extraordinary Optical Transmission Exhibited by Surface Plasmon Polaritons in a Double-Layer Wire Grid Polarizer (2015) (16)
- Effects of Substrate Plane on the Growth of High Quality AlN by Hydride Vapor Phase Epitaxy (2009) (16)
- Direct imaging of local strain relaxation along the side facets and the edges of hexagonal GaN pyramids by cathodoluminescence microscopy (1998) (16)
- LPE Growth and Surface Morphology of InxGa1-xAsyP1-y (y≤0.01) on (100) GaAs (1984) (16)
- Suppression of Crack Generation Using High-Compressive-Strain AlN/Sapphire Template for Hydride Vapor Phase Epitaxy of Thick AlN Film (2007) (16)
- Local strain distribution of hexagonal GaN pyramids (1998) (16)
- Field effect on thermal emission from the 0.40 eV electron level in InGaP (1993) (16)
- Silicon concentration dependence of optical polarization in AlGaN epitaxial layers (2011) (15)
- Structural and electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE (2009) (15)
- MOVPE growth of GaN on Si substrate with 3C-SiC buffer layer (2014) (15)
- Control of AlN buffer/sapphire substrate interface for AlN growth (2011) (15)
- Influence of growth interruption and Si doping on the structural and optical properties of AlxGaN/AlN (x>0.5) multiple quantum wells (2007) (14)
- Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy (2000) (14)
- Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectors in the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation (2001) (14)
- Orientation dependence of polarized Raman spectroscopy for nonpolar, semi-polar, and polar bulk GaN substrates (2012) (14)
- Fabrication of Binary Diffractive Lenses and the Application to LED Lighting for Controlling Luminosity Distribution (2013) (14)
- A design strategy for achieving more than 90% of the overlap integral of electron and hole wavefunctions in high-AlN-mole-fraction AlxGa1−xN multiple quantum wells (2016) (14)
- Effects of carrier gas ratio and growth temperature on MOVPE growth of AlN (2012) (14)
- Deep levels in InxGa1-xAsyP1-y grown on (100) GaAs by LPE (1989) (14)
- Detecting High-Refractive-Index Media Using Surface Plasmon Sensor with One-Dimensional Metal Diffraction Grating (2016) (14)
- Characterization of mid-gap states in HVPE and MOVPE-grown n-type GaN (1998) (14)
- Influence of growth conditions on al incorporation to AlxGa1- xN (x>0.4) grown by MOVPE (2007) (13)
- High performance Schottky UV detectors (265-100 nm) using n-Al0.5Ga0.5N on AlN epitaxial layer (2003) (13)
- Time-resolved microphotoluminescence of epitaxial laterally overgrown GaN (1999) (13)
- Selective growth of carbon nanotubes on silicon protrusions (2004) (13)
- Effect of Lattice Mismatch on Electric Properties near Heterointerface of InxGa1-xAsyP1-y(y<0.01)/(100) GaAs (1988) (13)
- Behavior of Threading Dislocations in SAG‐GaN Grown by MOVPE (2000) (12)
- GaN-based Schottky barrier photodetectors from near ultraviolet to vacuum ultraviolet (360-50 nm) (2003) (12)
- Facets formation mechanism of GaN hexagonal pyramids on dot-patterns via selective MOVPE (1995) (12)
- Analysis of Compositional Variation at Initial Transient Time in LPE Growth of InGaAsP/GaAs System (1985) (12)
- Influence of Ambient Gas on the Epitaxial Lateral Overgrowth of GaN by Metalorganic Vapor Phase Epitaxy (1999) (11)
- Selective Area Growth of GaN by MOVPE and HVPE (1997) (11)
- Using surface-plasmon polariton at the GaP-Au interface in order to detect chemical species in high-refractive-index media (2015) (11)
- Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer (2003) (11)
- Mobility enhancement of 2DEG in MOVPE-grown AlGaN/AlN/GaN HEMT structure using vicinal (0 0 0 1) sapphire (2009) (11)
- Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates (2001) (11)
- Field Emission from GaN Self-Organized Nanotips (2002) (11)
- Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal–Organic Vapor Phase Epitaxy (2010) (11)
- Raman Scattering of InGaAsP Lattice-Matched to GaAs in the Region of Immiscibility (1993) (11)
- Epitaxial lateral overgrowth of GaN on selected-area Si(1 1 1) substrate with nitrided Si mask (2003) (10)
- Antireflection Effect of Self-Organized GaN Nanotip Structure from Ultraviolet to Visible Region (2002) (10)
- Electron microscopy analysis of microstructure of postannealed aluminum nitride template (2016) (10)
- Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template (2013) (10)
- HVPE growth of AlN on trench- patterned 6H-SiC substrates (2011) (10)
- Cathodoluminescence of MOVPE-grown GaN layer on α-Al2O3 (1990) (10)
- Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thick a-plane AlN films grown on r-plane sapphire substrates (2016) (10)
- Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H2 and N2 (2002) (10)
- Huge binding energy of localized biexcitons in Al-rich AlxGa1―xN ternary alloys (2011) (10)
- Optical characterisation of GaN and related materials (1997) (10)
- Gain Spectroscopy of HVPE-Grown GaN (1997) (10)
- In-plane structural anisotropy and polarized Raman-active mode studies of nonpolar AlN grown on 6H-SiC by low-pressure hydride vapor phase epitaxy (2010) (9)
- High quality GaN grown by raised-pressure HVPE (2002) (9)
- AlN Grown on a- and n-Plane Sapphire Substrates by Low-Pressure Hydride Vapor Phase Epitaxy (2013) (9)
- Binding energy of localized biexcitons in AlGaN-based quantum wells (2013) (9)
- Selective-area growth of GaN on non- and semi-polar bulk GaN substrates (2014) (9)
- Fabrication and Optical Characterization of Facet‐Controlled ELO (FACELO) GaN by LP‐MOVPE (2001) (9)
- Observation of longitudinal-optic-phonon-plasmon-coupled mode in n-type AlGaN alloy films (2011) (9)
- Growth of undoped and Zn-doped GaN nanowires (2009) (9)
- Optical properties of MOVPE-grown a-plane GaN and AlGaN (2009) (9)
- Fabrication of a binary diffractive lens for controlling the luminous intensity distribution of LED light (2009) (8)
- Selective Area Etching of GaN and AlGaN by Thermally Chemical Reaction in Hydrogen Ambient (1997) (8)
- Effect of lattice mismatch between epitaxial layer and substrate on immiscibility of InGaAsP/GaAs LPE layers (1988) (8)
- X-Ray Analysis of Twist and Tilt of GaN Prepared by Facet-Controlled Epitaxial Lateral Overgrowth (FACELO) (2003) (8)
- Characterization of GaN based Schottky UV detectors in the vacuum UV (VUV) and the soft X‐ray (SX) region (10–100 nm) (2003) (8)
- Blue emission from InGaN/GaN hexagonal pyramid structures (2007) (8)
- Correlation between in-plane strain and optical polarization of Si-doped AlGaN epitaxial layers as a function of Al content and Si concentration (2012) (8)
- Depth Profile of the Excitonic Luminescence in Gallium-Nitride Layers (1996) (7)
- New dopant precursors for n-type and p-type GaN (1997) (7)
- Raman scattering study of to phonon modes in InGaAsP/GaAs (1994) (7)
- Growth of InGaP epitaxial layers by liquid phase electro-epitaxy (1991) (7)
- Microscopic crystalline structure of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template (2015) (7)
- In Situ Monitoring of GaN Reactive Ion Etching by Optical Emission Spectroscopy (2001) (7)
- HVPE growth of thick AlN on trench‐patterned substrate (2011) (7)
- Fabrication of crack-free thick AlN film on a-plane sapphire by low-pressure HVPE (2012) (7)
- Growth of crack-free AlGaN on selective-area-growth GaN (2008) (7)
- In-plane electric field induced by polarization and lateral photovoltaic effect in a-plane GaN (2009) (7)
- Cathodoluminescence Study of Optical Inhomogeneity in Si-Doped AlGaN Epitaxial Layers Grown by Low-Pressure Metalorganic Vapor-Phase Epitaxy (2013) (6)
- a ‐plane AlN and AlGaN growth on r ‐plane sapphire by MOVPE (2010) (6)
- High-temperature photoluminescence and photoluminescence excitation spectroscopy of Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells (2017) (6)
- Fine Structure And Magnetooptics Of Excitonic Levels In Wurtzite GaN (1997) (6)
- Microstructures of two-step facet-controlled ELO-GaN grown by MOVPE method—effect of mask geometry (2002) (6)
- Vacuum ultraviolet ellipsometer using inclined detector as analyzer to measure stokes parameters and optical constants — With results for AlN optical constants (2014) (6)
- Transient photoluminescence of aluminum‐rich (Al,Ga)N low‐dimensional structures (2014) (6)
- Epitaxial lateral overgrowth of GaN structures : spatially resolved characterization by cathodoluminescence microscopy and micro-Raman spectroscopy (1999) (6)
- Study of High-Quality and Crack-Free GaN Growth on 3C-SiC/Separation by Implanted Oxygen (111) (2010) (6)
- Fabrication of thick AlN film by low pressure hydride vapor phase epitaxy (2006) (6)
- Excitation mechanism of surface plasmon polaritons in a double-layer wire grid structure (2017) (6)
- Photoluminescence and optical gain in highly excited GaN (1997) (6)
- HVPE growth of c‐plane AlN on a‐plane sapphire using nitridation layer (2011) (6)
- Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations (2016) (6)
- Selective dynamical study of luminescences near the surface and the interface of epitaxial GaN (1995) (6)
- Realization of Maskless Epitaxial Lateral Overgrowth of GaN on 3C-SiC/Si Substrates (2013) (6)
- Properties of GaN grown on Si(111) substrates dependent on the thickness of 3C-SiC intermediate layers (2014) (6)
- LPE growth of InGaP/InGaAsP multiple thin layers on (111)A GaAs substrates (1989) (6)
- Recombination dynamics of localized excitons in AlxGa1-xN (0.37 (2011) (5)
- Selective Area Growth of Semipolar (202̄1) and (202̄1̄) GaN Substrates by Metalorganic Vapor Phase Epitaxy (2013) (5)
- Effect of surface pretreatment of r-plane sapphire substrates on the crystal quality of a-plane AlN (2016) (5)
- Analysis of Disorder Scattering in Ga0.47In0.53As Using Gaussian Potential (1983) (5)
- Distribution of Horizontal Dislocations in ELO-GaN (2002) (5)
- Fabrication of Binary Diffractive Lens on Optical Films by Electron Beam Lithography (2011) (5)
- Microstructural analysis of an epitaxial AlN thick film/trench-patterned template by three-dimensional reciprocal lattice space mapping technique (2016) (5)
- Effects of initial conditions and growth temperature on the properties of nonpolar a ‐plane AlN grown by LP‐HVPE (2009) (5)
- Variation of Surface Potentials of Si-Doped AlxGa1-xN (0 < x < 0.87) Grown on AlN/Sapphire Template by Metal–Organic Vapor Phase Epitaxy (2010) (5)
- n‐type conductivity control of AlGaN with high Al mole fraction (2006) (5)
- Fabrication of perfect plasmonic absorbers for blue and near-ultraviolet lights using double-layer wire-grid structures (2021) (5)
- Excitation‐dependent carrier dynamics in Al‐rich AlGaN layers and multiple quantum wells (2015) (5)
- Behaviour of anion vacancy in InxGa1-xAsyP1-y grown on (111)A and (100) GaAs (1990) (5)
- Characterization of high-quality epitaxial AlN films grown by MOVPE (2001) (5)
- GaN layer structures with buried tungsten nitrides (WNx) using epitaxial lateral overgrowth via MOVPE (2001) (5)
- Characterization of Interface Instability in InGaAsP LPE Growth on GaAs by Fourier Analysis (1985) (5)
- Improved surface morphology of flow-modulated MOVPE grown AIN on sapphire using thin medium-temperature AIN buffer layer (2007) (5)
- Si concentration dependence of structural inhomogeneities in Si-doped AlxGa1−xN/AlyGa1−yN multiple quantum well structures (x = 0.6) and its relationship with internal quantum efficiency (2014) (5)
- Effects of the AlN Interlayer on the Distribution and Mobility of Two-Dimensional Electron Gas in AlGaN/AlN/GaN Heterojunctions (2010) (5)
- Strain control of GaN grown on 3C-SiC/Si substrate using AlGaN buffer layer (2012) (5)
- Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN Via Metalorganic Vapor-Phase Epitaxy (MOVPE) (1998) (5)
- Photoluminescence due to Inelastic Biexciton Scattering from an Al0.61Ga0.39N Ternary Alloy Epitaxial Layer at Room Temperature (2012) (5)
- Influence of Si doping on the optical and structural properties of InGaN films (2006) (5)
- Influence of etching condition on surface morphology of AlN and GaN layers (2004) (5)
- Reduction of dislocation density of aluminium nitride buffer layer grown on sapphire substrate (2016) (4)
- Observation of Midgap States in GaN with Optical-Isothermal Capacitance Transient Spectroscopy (1996) (4)
- Evidence for moving of threading dislocations during the VPE growth in GaN thin layers (2011) (4)
- HVPE homoepitaxy on freestanding AlN substrate with trench pattern (2015) (4)
- Lattice-Mismatch-Induced Deep Level in InxGa1-xAsyP1-y (0≦y≦0.41) Grown on (100) GaAs (1989) (4)
- Excitation and deexcitation dynamics of excitons in a GaN film based on the analysis of radiation from high-order states (2016) (4)
- Study on the effects of AlN interlayer in thick GaN grown on 3C-SiC/Si substrates (2013) (4)
- Fundamental Properties of Wide Bandgap Semiconductors (2007) (4)
- Growth control of carbon nanotubes by plasma-enhanced chemical vapor deposition and reactive ion etching (2006) (4)
- Improved optical properties using self-organized GaN nanotip structure (2003) (4)
- Influence of Ge and Si on Reactive Ion Etching of GaN in Cl2 Plasma (2002) (4)
- Synthesis of III‐nitride microcrystals using metal‐EDTA complexes (2007) (4)
- Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask (2000) (3)
- Surface thermal stability of free-standing GaN substrates (2015) (3)
- Time-resolved micro-photoluminescence of epitaxial laterally overgrown GaN (2000) (3)
- in Properties, Processing and Applications of Gallium Nitride and Related Semiconductors (1999) (3)
- Time-resolved nonlinear luminescence of excitonic transitions in GaN (2004) (3)
- Effects of Si doping in high-quality AlN grown by MOVPE on trench-patterned template (2013) (3)
- Impact of the ZnO buffer on the optical properties of GaN: time resolved micro-photoluminescence (1999) (3)
- Enhanced emission efficiency of InGaN films with Si doping (2006) (3)
- Crack‐free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC intermediate layer (2014) (3)
- Anisotropic crystalline morphology of epitaxial thick AlN films grown on triangular‐striped AlN/sapphire template (2014) (3)
- TEM analysis of threading dislocations in ELO-GaN grown with controlled facet planes (2000) (3)
- THM Growth of Bulk CuInTe2 Single Crystals from In Solution (2000) (2)
- Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates : Condensed Matter (1988) (2)
- Fabrication and characterization of a binary diffractive lens for controlling focal distribution. (2020) (2)
- Review of Facet Controlled Epitaxial Lateral Overgrowth (FACELO) of GaN via Low Pressure Vapor Phase Epitaxy (2000) (2)
- Reaction Route of GaN Powder Formation via Sintering Gallium Ethylenediamine Tetraacetic Acid Complexes in Ammonia (2007) (2)
- Formation of horizontal dislocations in epitaxially lateral overgrown (ELO) GaN (2001) (2)
- Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction (2018) (2)
- Enhancement of blue emission from Mg‐doped GaN activated at low temperature in O2/N2 mixture (2006) (2)
- Fabrication of GaN layer with Low Dislocation Density using Facet controlled ELO technique (2000) (2)
- Growth characteristics of carbon nanotubes on nanotip-formed substrate (2006) (2)
- Temperature Dependence of Stokes Shifts of Excitons and Biexcitons in Al0.61Ga0.39N Epitaxial Layer (2018) (2)
- Growth and characterization of InGaAs bulk crystals grown by liquid phase electro-epitaxy (1993) (2)
- Nanoindentation hardness and elastic modulus of AlGaN alloys (2013) (2)
- Selective Area Growth (SAG) and Epitaxial Lateral Overgrowth (Elo) of GaN Using Tungsten Mask (1998) (2)
- Fabrication of position-controlled InN nanocolumns by ECR-MBE (2009) (2)
- Spatially resolved investigations of the excitonic luminescence in GaN (1997) (2)
- Structural study of GaN grown on nonpolar bulk GaN substrates with trench patterns (2017) (2)
- Effects of buffer layers and advanced technologies on heteroepitaxy of GaN (2001) (2)
- Deep center scattering potential in InGaP (1994) (1)
- Cathodoluminescence study on local high-energy emissions at dark spots in AlGaN/AlGaN multiple quantum wells (2018) (1)
- A verification of immiscibility in InGaAsP quaternary alloys (1988) (1)
- Growth Characteristics of Carbon Nanotubes on Oxidized Catalyst under Low-Pressure Condition (2012) (1)
- Confinement-enhanced biexciton binding energy in AlGaN-based quantum wells (2017) (1)
- Fabrication and optical characterization of a 2D metal periodic grating structure for cold filter application (2015) (1)
- Electron microscope study of modulated structures and heterointerfaces in LPE-grown GaInAsP layers lattice-matched on GaAs (1989) (1)
- Growth of high‐quality GaN on FACELO substrate by raised‐pressure HVPE (2003) (1)
- Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer (2004) (1)
- Improved surface morphology of flow‐modulated MOVPE grown AlN on sapphire using thin medium‐temperature AlN buffer layer (2008) (1)
- Fabrication and characterization of UV Schottky detectors by using a freestanding GaN substrate (2004) (1)
- MOVPE growth and n‐type conductivity control of high‐quality Si‐doped Al0.5Ga0.5N using epitaxial AlN as an underlying layer (2003) (1)
- Study on the influence of different trench-patterned templates on the crystalline microstructure of AlN epitaxial films by X-ray microdiffraction (2017) (1)
- Conductivity measurements on GaN grown by OMVPE and HVPE (1995) (1)
- Selective area growth of GaN on trench-patterned nonpolar bulk GaN substrates (2017) (1)
- Time-resolved microphotoluminescence of epitaxial laterally overgrown (1999) (1)
- The Relationship between the Bending Direction and Burgers Vector of Threading Dislocations at a Coherent Heterointerface in AlGaN/AlN Layers (2007) (1)
- Oxygen in InxGa1-xAsyP1-y Grown on GaAs (1992) (1)
- Dependence of In mole fraction in InGaN on GaN facets (2007) (1)
- Effect of Ge in Cl 2 Plasma for Reactive Ion Etching of GaN (2001) (1)
- Influence of Ge and Si on Reactive Ion Etching of GaN in Cl_2 Plasma : Semiconductors (2002) (1)
- Improved-Brooks Mobility Formula for Disorder Scattering in Semiconductor Alloys (1983) (1)
- Thermal analysis of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia (2008) (1)
- Corrigendum to “Cross-sectional X-ray microdiffraction study of a thick AlN film grown on a trench-patterned AlN/α-Al2O3 template” [J. Cryst. Growth 381 (2013) 37–42, doi: 10.1016/j.jcrysgro.2013.07.012] (2014) (1)
- Electrical properties and electroluminescence of GaN:Mg blue Light Emitting Diodes (1998) (1)
- Interaction of the dual effects triggered by AlN interlayers in thick GaN grown on 3C-SiC/Si substrates (2012) (1)
- Antireflection structure of self-organized GaN nanotips (2002) (1)
- Simulation of InGaP Liquid Phase Epitaxy Including Convection (2006) (1)
- Spatio-time-resolved cathodoluminescence study on high AlN mole fraction AlxGa1−xN structures grown by metalorganic vapor phase epitaxy (2016) (1)
- Improved optical properties of AlGaN using periodic structures (2008) (1)
- Growth of carbon nanotubes on silicon nano-protrusions (2005) (1)
- Fabrication and Optical Characterization of the Au Two-Dimensional Diffraction Grating Having Sub-Wavelength Structures (2016) (0)
- Structural and optical properties of Si-doped AlGaN/AlN multiple quantum wells grown by MOVPE (2007) (0)
- Effects of AlN buffer layer on growth of AlGaN multiple quantum wells (2016) (0)
- Face-to-face annealing of AlN films grown by MOVPE (2017) (0)
- AlN growth on Sapphire substrate by HVPE with RF heating system (2016) (0)
- Temperature dependence of Stokes shifts of excitons and biexcitons in Al 0.61 Ga 0.39 N ternary alloy epitaxial layers (2016) (0)
- Study on the Chemical Sensor Using Excitation of the Surface Plasmon Polariton with the GaP-Au Contact (2013) (0)
- Time-resolved photoluminescence of high-aluminum-content (Al,Ga)N quantum wells and epilayers emitting in the 215-255 nm range. (2012) (0)
- Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy (1993) (0)
- Concentration of Deep Level in InxGa1-xAsyP1-y Grown on (100) GaAs by LPE (1989) (0)
- Growth of High Quality c-plane AlN on a-plane Sapphire (2009) (0)
- Optical Characterization of Japanese Papers LED Lighting System with Human SenSitivity for Application in the (2008) (0)
- Simulation of Compositional Variation in Liquid Phase Epitaxy InGaP Using a Two Dimensional Model (2007) (0)
- Growth Characteristics of Graphene Film by Chemical Vapor Deposition Method Using Nozzle Gas Injection (2015) (0)
- Symposium Y: GaN and Related Alloys (2004) (0)
- A method and apparatus for growing gallium nitride from the vapor phase (1988) (0)
- Thickness dependence of buffer layer on a-plane AlN grown on r-plane sapphire (2016) (0)
- Annealing of sputtering AlN film and homoepitaxy on the AlN by HVPE (2017) (0)
- Space control and optics properties evaluation of the Double-Layer 2D Metal Grating Structure (2016) (0)
- Fabrication and characterization of a binary diffractive lens for controlling the focal length and depth of focus (2017) (0)
- Effect of Lattice Mismatch on Electric Properties near Heterointerface of In_xGa_ As_yP_ (y<0.01)/(100) GaAs : Optical Properties of Condensed Matter (1988) (0)
- Effect of an AlN Buffer Layer on AlGaN/α-A1_2O_3 Heteroepitaxial Growth by MOVPE (1987) (0)
- Self-organized GaN nanotips for cold cathode application (2002) (0)
- Excitation processes of electron-exciton system by phonon absorption and emission (2016) (0)
- Compositional Inhomogeneity of InGaAsP/GaAs LPE Layer by Precision X-Ray Diffractometry (1984) (0)
- Growth of Single Crystal Al_xGa_ N Films on Si Substrates by Metalorganic Vapor Phase Epitaxy (1993) (0)
- In-depth microstrucutral analysis of an AlN thick film grown on a trench-patterned template using nanobeam X-ray diffraction (2017) (0)
- Infrared absorption efficiency in AlAs/AlxGa1-xAs type-II multiple-quantum-well structure grown on (211) GaAs substrate (2000) (0)
- Effects of the Schottky electrode structure in GaN based UV-VUV (50-360 nm) photodetector (2001) (0)
- Characterization of GaN-Based Schottky Barrier Ultraviolet (UV) Detectorsin the UV and Vacuum Ultraviolet (VUV) Region Using Synchrotron Radiation : Semiconductors (2001) (0)
- Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE (2000) (0)
- Selective area growth of GaN using tungsten mask (1998) (0)
- Polarization Inverted AlN Fabricated by Face to Face Annealing for QPM-SHG (2017) (0)
- Final Report for AOARD Grant #114013 (FA2386-11-1-4013) “Investigation and characterization of defects in epitaxial films for ultraviolet light emitting devices using FUV time-resolved photoluminescence, time-resolved cathodoluminescence, and spatio-time-resolved cathodoluminescence excited using fe (2013) (0)
- Detection of high-refractive index media by a surface plasmon sensor using a one-dimensional metal diffraction grating (2015) (0)
- Coulomb blockade phenomena in Si MOSFETs with nano-scale channels fabricated by focused-ion beam implantation (1999) (0)
- [Young Scientist Presentation Award Speech] Characterization of crystalline structure in nitride semiconductors by three-dimensional reciprocal space mapping using X-ray microdiffraction (2016) (0)
- Epitaxial lateral overgrowth of GaN on trench patterned (10-10) bulk GaN substrates (2017) (0)
- AlN deposition on Sapphire substrate by sputtering (2017) (0)
- Considering the Origin of Surface Plasmon Polaritons for a Surface Plasmon Sensor with 1D Metal Grating Structure and Characterization of Sensitivity (2018) (0)
- Measurement of the defect distribution of an InGaAsP/GaAs heterojunction diode by LBIC (1987) (0)
- Surface treatment and homoepitaxial growth on AlN substrate (2014) (0)
- MOVPE method of producing a buffer layer with a mixture of single crystal and amorphous state (1990) (0)
- Selective Area Growth of III-Nitride and Their Application for Emitting Devices (2008) (0)
- The excitation of the surface plasmon polariton with the GaP-Au contact and application to chemical sensors (2013) (0)
- Facet-control in selective area growth (SAG) of a-plane GaN by MOVPE (2009) (0)
- Deep level characterization of MOVPE-grown AlGaN with high Al compositions (2010) (0)
- Optical Properties of Semiconductors with Nanotips Structure (2008) (0)
- Spatially-resolved photoluminescence and Raman study on the GaN/substrate interface (1995) (0)
- Raman scattering study of InGaN ternary alloys grown by MOVPE on (0001) sapphire substrates (2000) (0)
- Fabrication of GaN with Buried Tungsten (W) Structures Using Epitaxial Lateral Overgrowth (ELO) via LP-MOVPE (1999) (0)
- Dependence of Double-layer Wire Grid Structure on the Period and Wavelength by Using Ag (2017) (0)
- Characterization of III-nitride Based Schottky UV Detectors with Wide Detectable Wavelength Range (360–10 nm) using Synchrotron Radiation (2003) (0)
- Atomic-steps formation of c-plane sapphire by air annealing for AlN growth (2016) (0)
- Galliumnitridartige compound semiconductor light-emitting device and consisting thereof and processes for their manufacture. (1988) (0)
- A designing strategy for achieving an overlap integral of electron and hole wavefunctions higher than 90% in AlGaN multiple quantum wells (2016) (0)
- Effects of buffer layers in heteroepitaxy of gallium nitride (1999) (0)
- THM Growth of Ternary and Multinary Chalcopyrite Semiconductors (2000) (0)
- Erratum: “Observation of longitudinal-optic-phonon-plasmon-coupled mode in n-type AlGaN alloy films” [Appl. Phys. Lett. 99, 251904 (2011)] (2012) (0)
- Study on AlN growth conditions for hydride vapor phase epitaxy (2015) (0)
- Characterization of deep electron levels of AlGaN grown by MOVPE(Session 6B : Wide Bandgap Materials and Devices, Power Devices) (2010) (0)
- Fabrication of AlGaN multiple quantum wells on sapphire with lattice‐relaxation layer (2015) (0)
- Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth : Semiconductors (2001) (0)
- Detecting High-refractive-index (n>1.5) Media using Surface Plasmon Sensor with One-dimensional Au Diffraction Grating on Glass Substrate (2016) (0)
- The dependence of Surface Plasmon Sensor Using the One-Dimensional Metal Diffraction Grating on Its Period and the Incident Angle (2016) (0)
- Epitaxial Growth of III-Nitrides with Low Dislocations (2002) (0)
- Local Strain Distribution in AlN Thick Films Analyzed by X-Ray Microdiffraction (2014) (0)
- TEM observation of GaN pyramid grown selectivel on Si using AlGaN (2000) (0)
- Binding energy of biexcitons in AlGaN-based quantum wells -Dependence on alloy composition in ternary barrier layers- (2016) (0)
- Dependence of Double-layer Wire Grid Structure on the Incident Angle by Using Ag (2017) (0)
- Simulation of Liquid Phase Epitaxy considering two dimensional flow (2006) (0)
- The Non-Propagation Mode of the Surface Plasmon Resonance in the Metal Grating Structure (2020) (0)
- Stress analysis of a-plane GaN grown on r-plane sapphire substrates (2011) (0)
- Microscopic crystalline structure of a thick AlN film grown on a trench-patterned SiC template by three dimensional reciprocal space mapping (2016) (0)
- III-V semiconductors and process for its preparation (2001) (0)
- Cathodoluminescence study on local emission around dislocations in AlGaN multiple quantum well structures (2018) (0)
- Study of Plant Cultivation Using a Light-Emitting Diode Illumination System to Control the Spectral Irradiance Distribution (2017) (0)
- Multilayer substrate group 3-5 nitride semiconductor, method for producing a self-supporting substrate of a group 3-5 nitride semiconductor and semiconductor element (2006) (0)
- A study of deep levels in bulk CuInSe2 grown by THM METHOD (2000) (0)
- Antireflection Effect of Self-OOrganized GaN Nanotip Structure from Ultraviolet to Visible Region : Semiconductors (2002) (0)
- MOVPE growth of GaN and AlxGa1-xN and their luminescence and electrical properties (1991) (0)
- MOVPE growth and characterization of AlGaN with high AlN molar fraction using epitaxial AlN/Sapphire substrate (2002) (0)
- The controlling of transmittance and reflectance of a 2D metal periodic grating structure for cold filter application (2016) (0)
- of the same gallium nitride single crystal substrate and method for producing (2004) (0)
- The influence of Si doping to high Al mole fraction AlGaN (2005) (0)
- High-temperature annealing of AlN on sapphire using face-to-face method (Conference Presentation) (2018) (0)
- Temperature dependence of excitonic optical transitions in AlGaN-based quantum well structures (2017) (0)
- Spatially resolved cathodoluminescence study of selected-area ELO-GaN grown on Si(111) substrates (2003) (0)
- New buffer layer technique using underlying epitaxial AlN films for high-quality GaN growth (2001) (0)
- Low-dislocation-density GaN and AlGaN using epitaxial-lateral-overgrowth methods (2004) (0)
- Growth temperature dependence of buffer-layer on a-plane AlN grown on r-plane sapphire (2016) (0)
- Schottky Barrier on n-Type Al0.14Ga0.86N Grown by Organometalic Vapor Phase Epitaxy (1995) (0)
- Optical characterization of c -plane AlGaN multiple quantum wells with enhanced overlap integral of electron and hole wavefunctions by the quadratic compositional modulation (2017) (0)
- Annealing Effects of CuInS2 Single Crystals Grown by Traveling Heater Method (2000) (0)
- Effects of Buffer Layer in MOVPE Growth of GaN Film on Sapphire Substrate (1989) (0)
- Optical Characterization of Japanese Papers for Application in the LED Lighting System with Human Sensitivity (2008) (0)
- Fabrication of Polarization Control Devices using Metal Grating Structures (2021) (0)
- Vapor phase epitaxial device composite semiconductors (1993) (0)
- Control of height and density of GaN nano-structure and its antireflection and enhanced transmission properties (2003) (0)
- Excitation mechanism of surface plasmon polaritons in a double-layer wire grid structure (2017) (0)
- Study on design and fabrication of the plasmonic wave plate using Ag wire grid structure (2018) (0)
- Nitride Semiconductor Surfaces. Epitaxial Growth and Dislocation Formation in Crystals of Nitride Semiconductors. (2000) (0)
- Formation mechanism of Al‐depleted bands in MOVPE‐AlGaN layer on GaN template with trenches (2010) (0)
- Spatio-time-resolved cathodoluminescence studies on the Si-doping effects in high AlN mole fraction AlxGa1−xN multiple quantum wells grown on an AlN template by metalorganic vapor phase epitaxy (2015) (0)
- Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter (2001) (0)
- The Sensitivity Evaluation of Surface Plasmon Sensor Using the One-Dimensional Metal Diffraction Grating (2017) (0)
- Gallium nitride semiconductor Lumisneszenzdiode as well as methods for their preparation. (1988) (0)
- cuum-ultra Violet Reflectance Spectroscopy of Strongly Correlated Electron System (2013) (0)
- Fabrication and characterization of plasmonic band-stop filter using Ag grating (2020) (0)
- Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H_2 and N_2(Semiconductors) (2002) (0)
- Crystal Growth is the Ultimate Technology : Expecting the New Japanese Association for Crystal Growth (2006) (0)
- Materials Science and Engineering B: Solid State Materials for Advanced Technology : Preface (2001) (0)
- Fabrication of Schottky UV photodetector based on Al_ Ga_ N and its spectral responsivity (2003) (0)
- Solution Growth of CuGaxIn1-xSe2 from CuSe Solutions (2000) (0)
- Polarization Property of a Double-layer Wire Grid Polarizer and the Mechanism of Transmission (2015) (0)
- Responsivity and electrical characteristics of GaN based Schottky barrier UV detectors with transparent electrode in the near UV and VUV region (2002) (0)
- Fabrication of perfect plasmonic absorbers for blue and near-ultraviolet lights using double-layer wire-grid structures (2021) (0)
- Raman scattering study of the immiscible region in InGaAsP grown by LPE on (100) and (111) GaAs (1996) (0)
This paper list is powered by the following services:
What Schools Are Affiliated With Kazumasa Hiramatsu?
Kazumasa Hiramatsu is affiliated with the following schools: