Kazuyoshi Torii
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Japanese mangaka
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Why Is Kazuyoshi Torii Influential?
(Suggest an Edit or Addition)According to Wikipedia, Kazuyoshi Torii was a Japanese manga artist and university professor. Life and career Born in Kamata, a defunct village today part of Okazaki, Torii started his career as an assistant of Fujio Akatsuka. He made his official debut as a mangaka in 1968 in Weekly Shōnen Sunday with the manga Kuchinashi Inu . He is best known for the provoking, taboo-free serializated manga . The manga debuted in Weekly Shōnen Jump and sold over 10 million copies.
Kazuyoshi Torii's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Rutile-type TiO2 thin film for high-k gate insulator (2003) (214)
- First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics (2005) (139)
- Oxygen Vacancy Induced Substantial Threshold Voltage Shifts in the Hf-based High-K MISFET with p+poly-Si Gates -A Theoretical Approach (2004) (125)
- Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm (2006) (125)
- Electrode‐induced degradation of Pb(ZrxTi1−x)O3 (PZT) polarization hysteresis characteristics in Pt/PZT/Pt ferroelectric thin‐film capacitors (1996) (118)
- Impact of threshold voltage fluctuation due to random telegraph noise on scaled-down SRAM (2008) (84)
- Smallest Vth variability achieved by intrinsic silicon on thin BOX (SOTB) CMOS with single metal gate (2008) (75)
- Analytical quantum mechanical model for accumulation capacitance of MOS structures (2002) (73)
- Cross-point phase change memory with 4F2 cell size driven by low-contact-resistivity poly-Si diode (2006) (69)
- Statistical measurement of random telegraph noise and its impact in scaled-down high-κ/metal-gate MOSFETs (2012) (66)
- Physical model of BTI, TDDB and SILC in HfO/sub 2/-based high-k gate dielectrics (2004) (64)
- Remote-charge-scattering limited mobility in field-effect transistors with SiO2 and Al2O3∕SiO2 gate stacks (2005) (63)
- Comprehensive study on vth variability in silicon on Thin BOX (SOTB) CMOS with small random-dopant fluctuation: Finding a way to further reduce variation (2008) (54)
- Effective Electron Mobility Reduced by Remote Charge Scattering in High-κ Gate Stacks (2002) (53)
- Electro-Luminescence from Ultra-Thin Silicon (2006) (48)
- Evaluation methodology for random telegraph noise effects in SRAM arrays (2011) (47)
- Hydrogen-related Degradation and Recovery Phenomena in Pb(Zr,Ti)O_3 Capacitors with a Platinum Electrode (1997) (47)
- Pt/PbZrxTi1−xO3 interfacial reaction and Schottky barrier formation studied by x-ray photoelectron spectroscopy: Effect of H2 and O2 annealing (1999) (46)
- Oxygen-vacancy-induced threshold voltage shifts in Hf-related high-k gate stacks (2006) (45)
- Improved theory for remote-charge-scattering-limited mobility in metal–oxide–semiconductor transistors (2002) (44)
- Single-Target Sputtring Process for Lead Zirconate Titanate Thin Films with Precise Composition Control (1991) (43)
- Suppression of stress-induced voiding in copper interconnects (2002) (41)
- Effects of remote-surface-roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics (2004) (40)
- Physics in Fermi level pinning at the polySi/Hf-based high-k oxide interface (2004) (38)
- Si emission from the SiO2/Si interface during the growth of SiO2 in the HfO2/SiO2/Si structure (2006) (37)
- Silicon light-emitting transistor for on-chip optical interconnection (2006) (32)
- Reduction of random telegraph noise in High-к / metal-gate stacks for 22 nm generation FETs (2009) (32)
- Reduction of current leakage in chemical-vapor deposited Ta2O5 thin-films by oxygen-radical annealing [DRAM dielectric] (1996) (29)
- Understanding short-term BTI behavior through comprehensive observation of gate-voltage dependence of RTN in highly scaled high-κ / metal-gate pFETs (2011) (27)
- 1.5-V Operating fully-depleted amorphous oxide thin film transistors achieved by 63-mV/dec subthreshold slope (2008) (26)
- Impact of HK / MG stacks and future device scaling on RTN (2011) (26)
- Strain-Imaging Observation of Pb(Zr, Ti)O3 Thin Films (1995) (23)
- Selective Dry Etching of HfO2 in CF4 and Cl2/HBr-Based Chemistries (2004) (21)
- Effect of Hf Sources, Oxidizing Agents, and NH3/Ar Plasma on the Properties of HfAlOx Films Prepared by Atomic Layer Deposition (2004) (21)
- Effect of interfacial oxide on electron mobility in metal insulator semiconductor field effect transistors with Al 2 O 3 gate dielectrics (2003) (21)
- Voltage and temperature dependence of random telegraph noise in highly scaled HKMG ETSOI nFETs and its impact on logic delay uncertainty (2012) (21)
- Annealing properties of open volumes in HfSiOx and HfAlOx gate dielectrics studied using monoenergetic positron beams (2005) (20)
- Band Engineering of Ru/Rutile-TiO2/Ru Capacitors by Doping Cobalt to Suppress Leakage Current (2011) (19)
- Preparation of Lead Zirconate Titanate Thin Films by Reactive Evaporation ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS) (1994) (19)
- Ultra-thin titanium oxide film with a rutile-type structure (2003) (19)
- Role of Nitrogen Atoms in Reduction of Electron Charge Traps in Hf-Based High- $\kappa$ Dielectrics (2007) (18)
- Low voltage (Vdd∼0.6 V) SRAM operation achieved by reduced threshold voltage variability in SOTB (silicon on thin BOX) (2006) (18)
- Electron Trap Characteristics of Silicon Rich Silicon Nitride Thin Films (2007) (18)
- Process and properties of Pt/Pb(Zr, Ti)O3/Pt integrated ferroelectric capacitors (1997) (18)
- Oxide TFT Rectifier Achieving 13.56-MHz Wireless Operation (2012) (17)
- Self-Aligned Fabrication Process of Electrode for Organic Thin-Film Transistors on Flexible Substrate Using Photosensitive Self-Assembled Monolayers (2007) (17)
- Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces - guiding principles for gate metal selection (2005) (16)
- Highly Oxidation-Resistant TiN Barrier Layers for Ferroelectric Capacitors (1997) (16)
- Built-in interface in high-κ gate stacks (2003) (16)
- The mechanism of mobility degradation in MISFETs with Al/sub 2/O/sub 3/ gate dielectric (2002) (16)
- Isotopic labeling study of the oxygen diffusion in HfO2∕SiO2∕Si (2007) (15)
- Pt/TiN electrodes for stacked memory with polysilicon plug utilizing PZT films (1996) (14)
- Hysteretic drain-current behavior due to random telegraph noise in Scaled-down FETs with high-κ/metal-gate stacks (2010) (14)
- Unique behavior of F-centers in high-k Hf-based oxides (2006) (14)
- Inversion Electron Mobility Affected by Phase Separation in High-Permittivity Gate Dielectrics (2003) (13)
- Physics of Metal/High-k Interfaces (2006) (13)
- Properties of ultra-thin lead zirconate titanate thin films prepared by ozone jet reactive evaporation (1997) (13)
- Impact of backside Cu contamination in the 3D integration process (2006) (12)
- A thermally-stable sub-0.9nm EOT TaSix/HfSiON gate stack with high electron mobility, suitable for gate-first fabrciation of hp45 LOP devices (2005) (12)
- Dielectric Properties of RF-Magnetron-Sputtered (Ba, Pb)(Zr, Ti)O3 Thin Films (1992) (12)
- Analysis and control of surface degenerated layers grown on thin Pb(Zr, Ti)O3 films (1997) (12)
- An ultra-thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond (2002) (12)
- Electron trapping characteristics and scalability of HfO2 as a trapping layer in SONOS-type flash memories (2008) (11)
- Interface reaction of poly-Si/high-k insulator systems studied by hard X-ray photoemission spectroscopy (2005) (11)
- A new insight into the dynamic fluctuation mechanism of stress-induced leakage current (2008) (11)
- Dielectric breakdown mechanism of HfSiON/SiO/sub 2/ gate dielectric (2004) (11)
- Concerning the influence of pattern symmetry on CD-SEM local overlay measurements for double patterning of complex shapes (2010) (10)
- Fabrication of High-Mobility Nitrided Hafnium Silicate Gate Dielectrics with Sub-1-nm Equivalent Oxide Thickness Using Plasma Nitridation and High-Temperature Postnitridation Annealing (2006) (10)
- Impact of Rapid Thermal O2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100) (2004) (9)
- Enhancement of Drain Current in Planar MOSFETs by Dopant Profile Engineering Using Nonmelt Laser Spike Annealing (2007) (9)
- Freezing of polarization in a Pb(Zr,Ti)O3 film observed by strain imaging (1998) (8)
- Application of XPS time-dependent measurement to the analysis of charge trapping phenomena in HfAlOx films (2004) (8)
- Strain-imaging observation of the polarization freezing of the domains under the electrode of a Pb(Zr, Ti)O3 film (1999) (8)
- Critical dimension scanning electron microscope local overlay measurement and its application for double patterning of complex shapes (2011) (8)
- MECHANISM OF TIN BARRIER-METAL OXIDATION IN A FERROELECTRIC RANDOM ACCESS MEMORY (1998) (8)
- Reliability issues of silicon LSIs facing 100-nm technology node (2002) (8)
- Proposal of new HfSiON CMOS fabrication process (HAMDAMA) for low standby power device (2004) (7)
- Spatial signature in local overlay measurements: what CD-SEM can tell us and optical measurements can not (2010) (7)
- Scalability of TiN/HfAlO/TiN MIM DRAM capacitor to 0.7-nm-EOT and beyond (2009) (7)
- Origin of Drivability Enhancement in Scaled pMOSFETs with 45/spl deg/ Rotated <100> Channels (2006) (7)
- Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams (2004) (7)
- Nitrogen profile engineering in the interfacial SiON in a HfAlO/SiON gate dielectric by NO Re-oxidation (2006) (7)
- CD-SEM metrology of spike detection on sub-40 nm contact holes (2010) (7)
- Ta/sub 2/O/sub 5/ capacitors' dielectric material for giga-bit DRAMs (1995) (7)
- Mobility Reduction due to Remote Charge Scattering in Al2O3/SiO2 Gate-Stacked MISFETs (2002) (6)
- Improvement in the uniformity and the thermal stability of Hf-silicate gate dielectric by plasma-nitridation (2003) (6)
- Fixed charge-induced mobility degradation and its recovery in MISFETs with Al2O3 gate dielectric (2001) (5)
- Improvement of interfacial layer reliability by incorporation of deuterium into HfAlOx formed by D/sub 2/O-ALD (2005) (5)
- Orientation control in PZT/Pt/TiN multilayers with various Si and SiO2 underlayers for high performance ferroelectric memories (2000) (5)
- In-situ HfSiON/SiO2 gate dielectric fabrication using hot wall batch system (2003) (5)
- Novel Laser Annealing Process for Advanced Complementary Metal Oxide Semiconductor Devices with Suppressed Polycrystalline Silicon Gate Depletion and Ultra shallow Junctions (2007) (5)
- Fabrication and properties of one-mask-patterned ferroelectric integrated capacitors (1997) (5)
- Size and top electrode-edge effects on fatigue in Pb(Zr,Ti)O3 capacitors with Pt-electrodes (2001) (5)
- Effects of Hf sources, oxidizing agents, and NH3 radicals on properties of HfAlOx films prepared by atomic layer deposition (2003) (4)
- Robust 130 mn-node Cu dual damascene technology with low-k barrier SiCN (2001) (4)
- Depletion-free poly-Si gate high-k CMOSFETs (2004) (4)
- Metal Schottky Source/Drain Technology for Ultrathin Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors (2011) (4)
- SiN-capped HfSiON gate stacks with improved bias temperature instabilities for 65 nm-node low-standby-power transistors (2004) (4)
- Role of ozone in reactive coevaporation of lead zirconate titanate thin films (1998) (4)
- Band Engineering of Rutile TiO2 by Cobalt Doping in Ru/Rutile-TiO2/Ru Capacitor aiming 40-nm DRAM and Beyond (2009) (4)
- Thermal Instability of Poly-Si Gate Al2O3 MOSFETs (2004) (4)
- Transient Capacitance in Metal-Oxide-Semiconductor Structures with Stacked Gate Dielectrics (2004) (3)
- Determination of Time to Breakdown of 0.8-1.2 nm EOT HfSiON Gate Dielectrics with Poly-Si and Metal Gate Electrodes (2006) (3)
- Effects of Thin Film Interference on Junction Activation during Sub-Millisecond Annealing (2007) (3)
- Texture control of Pb(Zr, Ti)O3thin films (1999) (3)
- Mechanism of state transition of a defect causing random-telegraph-noise-induced fluctuation in stress-induced leakage current of SiO2 films (2014) (3)
- Advanced oxynitride gate dielectrics for CMOS applications (2003) (3)
- Theoretical Studies on the Physical Properties of Poly-Si and Metal Gates/HfO2 Related High-k Dielectrics Interfaces (2006) (3)
- Physical and Electrical Properties of HfAlOx Films Prepared by Atomic Layer Deposition Using NH3/Ar Plasma (2004) (3)
- Oxide TFT rectifier achieving 13.56-MHz wireless operation with DC output up to 12 V (2010) (3)
- The role of nitrogen incorporation in Hf-based high-k dielectrics: reduction in electron charge traps (2005) (3)
- Theoretical Screening of Candidate Materials for DRAM Capacitors and Experimental Demonstration of a Cubic-Hafnia MIM Capacitor (2010) (3)
- Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs (2005) (3)
- Improvement in NBTI by catalytic-CVD silicon nitride for hp-65nm technology (2005) (3)
- Reduction of CV Hysteresis in Metal/High-k MISFETs Using Flash Lamp Post Deposition Annealing (2004) (2)
- Nitrided Hafnium Silicate Film Formation by Sequential Process Using a Hot Wall Batch System and Its Application to MOS Transistor (2003) (2)
- CxFET: A novel steep subthreshold swing CMOS featuring a tunnel-injection bipolar transistor and MOSFET device complex (2010) (2)
- Thermally and Chemically Robust, Non-Reflowable Low-k Spin-on Glass (k = 2.4) for Gap-Filling Technology in Sub-50-nm Memory Devices (2006) (2)
- Si/Si1−xGex nanopillar superlattice solar cell: A novel nanostructured solar cell for overcoming the Shockley-Queisser limit (2011) (2)
- Order-Disorder Kinetics of Cu_3Au Studied by X-Ray Diffraction (1990) (2)
- Gate-last MISFET structures and process for high-k and metal gate MISFETs characterization (2004) (2)
- Dielectric breakdown Characteristics of poly-Si/HfAlOx/SiON gate stack (2004) (2)
- A scalable single-transistor/single-capacitor memory cell structure characterized by an angled-capacitor layout for megabit FeRAMs (1998) (2)
- Accurate evaluation of mobility in high gate-leakage-current MOSFETs by using a transmission-line model (2004) (2)
- Area-Selective Post-Deposition Annealing Process Using Flash Lamp and Si Photoenergy Absorber for Metal/High-k Gate Metal–Insulator–Semiconductor Field-Effect Transistors with NiSi Source/Drain (2006) (2)
- Stimulated Emission in Silicon Fin Light-Emitting Diode (2010) (2)
- Three Dimentional Effects on Submicrometer Diagonal MOSFETs (1989) (2)
- Quantitative understanding of mobility degradation due to remote charge scattering (2001) (2)
- New Theory of Effective Workfunctions at Metal/High-k Dielectric Interfaces -Application to Metal/High-k HfO2 and La2O3 Dielectric Interfaces (2006) (2)
- Charge trapping by oxygen-related defects in HfO/sub 2/-based high-k gate dielectrics [MOSFETs] (2005) (2)
- Extendibility of High Mobility HfSiON Gate Dielectrics (2005) (2)
- High-Quality CVD SiO2 Interfacial Layer Prepared by Cyclic Deposition with O2 Plasma Treatment (2006) (2)
- Effect of Purge Time on the Properties of HfO 2 Films Prepared by Atomic Layer Deposition (2004) (1)
- Interface Reaction of High-k Gate Stack Structures Observed by High-Resolution RBS (2007) (1)
- Highly Accurate Composition Analysis of (Pb,Zr)TiO3 Using a Scanning Electron Microscope/Energy Dispersive X-Ray Spectrometer (2000) (1)
- Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks (2003) (1)
- Ni-Salicided Poly-Si/poly-SiGe-Layered Gate Technology for 65-nm-node CMOSFETs (2004) (1)
- Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates (2012) (1)
- High-κ /Oxynitride Gate Dielectric - Searching for Serendipitous Materials - (2003) (1)
- A high performance 0.12 /spl mu/m CMOS with manufacturable 0.18 /spl mu/m technology (2001) (1)
- Physical and Electrical Properties of Al 2 O 3 , HfO 2 , and their Alloy Films Prepared by Atomic Layer Deposition for 65nm CMOS Gate Dielectric (2002) (1)
- Effective Electron Mobility Reduced by Remote Charge Scattering in High-K Gate Stacks : Short Note (2002) (1)
- State Transition of a Defect Causing Random-Telegraph-Noise Fluctuation in Stress-Induced Leakage Current of Thin SiO2 Films in a Metal–Oxide–Silicon Structure (2013) (1)
- Improved performance of FETs with HfAlOx gate dielectrics using optimized poly-SiGe gate electrodes (2003) (1)
- Light-Emitting Transistor Based on Ultra-Thin Silicon (2007) (1)
- Nitrogen profile engineering in the interfacial SiON for HfAlOx gate dielectric (2004) (1)
- 65nm-node Low-Standby-Power FETs with HfAlOx Gate Dielectric (2004) (1)
- Ultra-thin fatigue free lead zirconate titanate thin films for gigabit DRAMs (1995) (1)
- Extensive studies for effects of nitrogen incorporation into Hf-based high-k gate dielectrics (2006) (0)
- Low-Shrinkage Spin-On Glass for Low Parasitic Capacitance Gap-Filling Process in Advanced Memory Devices (2012) (0)
- Oxidation process of HfO/sub 2//SiO/sub 2//Si structures observed by high-resolution RBS (2006) (0)
- A Novel Laser Annealing Process for Advanced CMOS with Suppressed Gate Depletion and Ultr a-shallow Junctions (2006) (0)
- New findings in nano-scale interface physics and their relations to nano-CMOS technologies (2006) (0)
- Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation (2003) (0)
- Quantum Mechanical Analysis of Accumulation Layers in MOS Structures (2001) (0)
- Quantum Confined Ultra-Thin Silicon Light-Emitting Transistor for On-Chip Optical Interconnection (2007) (0)
- Single-Target Sputtering Process for PZT Thin Films with Precise Composition Control (1991) (0)
- Area Selective Flash Lamp Post-Deposition Annealing of High-k Film Using Si Photo Absorber for Metal Gate MISFETs with NiSi Source/Drain (2005) (0)
- Point defects in thin HfAlO x films probed by monoenergetic positron beams (2003) (0)
- Intrinsic Effect of a Nitrogen Atom on Hf-based High-k Gate Dielectrics -A First Principles Study (2005) (0)
- Selective Dry Etching of HfO2 in CF4, Cl2 and HBr Based Chemistry (2003) (0)
- A HfAlOx Gate Dielectric FET Technology Compatible with a Conventional Poly-Si Gate CMOS Process (2003) (0)
- Dry Etching Damage In Pt/Pb(Zr, Ti)O/sub 3//Pt Capacitors Patterned By A Single Photolithography Process Step (1997) (0)
- 8.5 charge-induced mobility degradation and its recovery in MISFETs with A1,0, gate dielectric (2001) (0)
- IMPACT OFTHRESHOLD VOLTAGEFLUCTUATION DUE TO RANDOMTELEGRAPH NOISE ONSCALED-DOWNSRAM (2008) (0)
- Process and Properties of One-mask Patterned Ferroelectric Integrated Capacitor (1997) (0)
- Impact of oxygen-enriched SiN interface on Al/sub 2/O/sub 3/ gate stack. An innovative solution to low-power CMOS (2003) (0)
- A TiO 2 Gate Insulator of a Lnm Equivalent Oxide Thickness Deposited by Electron-Beam Evaporation (2008) (0)
- Self-Aligned Fabrication Process of Organic Thin-Film-Transistors on the Flexible Substrate Using Photo-Sensitive Self-Assembled Monolayers (2006) (0)
- New type steep-S device using the bipolar action (2012) (0)
- The Suppression of the Interfacial Reaction between HfAlOx/Interfacial Layers during Post Deposition Annealing (2005) (0)
- Morphology and Formation Process of Lanthanum Phosphate Synthesized by the Hydrolysis of Trimethyl Phosphate. (1997) (0)
- High-resolution RBS analysis of Si-dielectrics interfaces (2006) (0)
- Time-dependent dielectric breakdown of HfAlOx/SiON gate dielectric (2004) (0)
- Asymmetric Distribution of Charge Trap in HfO2-Based High-k Gate Dielectrics (2006) (0)
- Stucy on Carrier Trapping Phenomena in HfAlOx Film by using XPS Time-Dependent Measurement (2004) (0)
- HfSiON Gate Dielectrics for hp45 Node and Beyond (2006) (0)
- Analysis of statistical variation in NBTI degradation of HfO2/SiO2 FETs (2010) (0)
- Characterization of Charge Trapping and Dielectric Breakdown of HfAlOx/SiON Dielectric Gate Stack (2006) (0)
- SYNTHESIS OF RARE EARTH PHOSPHATES BY A NEW HOMOGENEOUS PRECIPITATION USING HYDROLYSIS OF PHOSPHORUS OXYCHLORIDE (1996) (0)
- Plenary session (2021) (0)
- Metal Schottky S/D Technology of Ultra Thin SOTB (Silicon on Thin Box) MOSFET (2010) (0)
- A TiO2 Gate Insulator of a 1-nm Equivalent Oxide Thickness Deposited by Electron-Beam Evaporation (1999) (0)
- Searching for a Scerendipitous High-K Materials (2003) (0)
- Electrical characterization of HfAlOx/SiON dielectric gate capacitors (2004) (0)
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