Kei May Lau

Q: What Schools Are Affiliated With Kei May Lau

Kei May Lau is affiliated with the following schools: Rice University, University of California, Berkeley, Chinese University of Hong Kong, University of Massachusetts Amherst, Hong Kong University of Science and Technology, University of Massachusetts

Kei May Lau's AcademicInfluence.com Rankings

Kei May Lau

Engineering

#4261

World Rank

#5447

Historical Rank

Electrical Engineering

#1549

World Rank

#1644

Historical Rank

Applied Physics

#2235

World Rank

#2274

Historical Rank

engineering Degrees

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Engineering

Kei May Lau's Degrees

PhD Electrical Engineering University of California, Berkeley
Masters Electrical Engineering University of California, Berkeley
Bachelors Electrical Engineering University of California, Berkeley

Why Is Kei May Lau Influential?

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According to Wikipedia, Kei May Lau is a semiconductor engineer whose research topics have included high-electron-mobility transistors, light-emitting diodes, and laser diodes. She is Fang Professor of Engineering and Director of the Photonics Technology Center in the Hong Kong University of Science and Technology Department of Electronic & Computer Engineering.

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Kei May Lau's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment (2005) (525)
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode (2006) (451)
Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology. (2015) (159)
Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon (2015) (133)
AlGaN-GaN double-channel HEMTs (2005) (110)
ELASTIC ANISOTROPY FACTORS FOR ORTHORHOMBIC, TETRAGONAL, AND HEXAGONAL CRYSTALS (1998) (110)
1.3 μm Submilliamp Threshold Quantum Dot Micro-lasers on Si (2017) (110)
Nanoscale epitaxial lateral overgrowth of GaN-based light-emitting diodes on a SiO2 nanorod-array patterned sapphire template (2008) (110)
Optical cross-talk reduction in a quantum-dot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold (2017) (108)
GaN-based LED micro-displays for wearable applications (2015) (103)
High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits (2007) (101)
Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon. (2016) (100)
Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si. (2017) (95)
AlGaN/GaN/InGaN/GaN DH-HEMTs with an InGaN notch for enhanced carrier confinement (2006) (86)
Enhancement-Mode$hboxSi_3hboxN_4hbox/AlGaN/GaN$MISHFETs (2006) (85)
Normally Off AlGaN/GaN Low-Density Drain HEMT (LDD-HEMT) With Enhanced Breakdown Voltage and Reduced Current Collapse (2007) (85)
Monolithic LED Microdisplay on Active Matrix Substrate Using Flip-Chip Technology (2009) (79)
Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using$hboxCF_4$Plasma Treatment (2006) (78)
Comparison of blue and green InGaN/GaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy (2005) (76)
Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics (2017) (75)
Fully Vertical GaN p-i-n Diodes Using GaN-on-Si Epilayers (2016) (72)
Patterned substrate epitaxy surface shapes (1991) (69)
360 PPI Flip-Chip Mounted Active Matrix Addressable Light Emitting Diode on Silicon (LEDoS) Micro-Displays (2013) (65)
Mechanical characterization of suspended GaN microstructures fabricated by GaN-on-patterned-silicon technique (2006) (64)
Monolithic Integration of AlGaN/GaN HEMT on LED by MOCVD (2014) (63)
GaN-based blue light-emitting diodes grown and fabricated on patterned sapphire substrates by metalorganic vapor-phase epitaxy (2004) (62)
DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs (2007) (61)
A Novel BLU-Free Full-Color LED Projector Using LED on Silicon Micro-Displays (2013) (60)
Monolithically Integrated InGaN/GaN Light-emitting Diodes, Photodetectors and Waveguides on Si Substrate (2018) (60)
High-performance III-nitride blue LEDs grown and fabricated on patterned Si substrates (2007) (59)
Continuous-Wave Optically Pumped 1.55 μm InAs/InAlGaAs Quantum Dot Microdisk Lasers Epitaxially Grown on Silicon (2017) (55)
Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates (2016) (55)
Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy (2004) (54)
Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates. (2017) (53)
Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs (2017) (53)
Fully‐integrated active matrix programmable UV and blue micro‐LED display system‐on‐panel (SoP) (2017) (50)
Enhanced luminescence from GaN-based blue LEDs grown on grooved sapphire substrates (2005) (50)
1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below $1~\mu$ A/cm2 (2020) (50)
Design and Characterization of Active Matrix LED Microdisplays With Embedded Visible Light Communication Transmitter (2016) (50)
Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs (2005) (49)
1.5μm quantum-dot diode lasers directly grown on CMOS-standard (001) silicon (2018) (49)
1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si (2017) (49)
Low-Leakage-Current AlN/GaN MOSHFETs Using $ \hbox{Al}_{2}\hbox{O}_{3}$ for Increased 2DEG (2012) (48)
1700 Pixels Per Inch (PPI) Passive-Matrix Micro-LED Display Powered by ASIC (2014) (48)
Wide-bandwidth electron bolometric mixers: a 2DEG prototype and potential for low-noise THz receivers (1993) (47)
Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx as Gate Dielectric (2017) (47)
Study of Schottky barrier of Ni on p-GaN (2001) (45)
Full-Color Pixelated-Addressable Light Emitting Diode on Transparent Substrate (LEDoTS) Micro-Displays by CoB (2016) (43)
Telecom InP/InGaAs nanolaser array directly grown on (001) silicon-on-insulator. (2019) (43)
Active Matrix Monolithic LED Micro-Display Using GaN-on-Si Epilayers (2019) (42)
O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si. (2017) (42)
InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μm band (2015) (41)
Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors (2014) (41)
1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon. (2016) (40)
Micro-Raman-scattering study of stress distribution in GaN films grown on patterned Si(111) by metal-organic chemical-vapor deposition (2005) (40)
Improved GaN-based LED grown on silicon (111) substrates using stress/dislocation-engineered interlayers (2013) (39)
Enhanced thermal stability of the two-dimensional electron gas in GaN/AlGaN/GaN heterostructures by Si3N4 surface-passivation-induced strain solidification (2004) (38)
Enhancement-Mode AlN/GaN MOSHFETs on Si Substrate With Regrown Source/Drain by MOCVD (2012) (38)
Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si (2020) (38)
Room-temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands (2018) (36)
Influence of oxidation and annealing temperatures on quality of Ga2O3 film grown on GaN (2006) (36)
Fully- and Quasi-Vertical GaN-on-Si p-i-n Diodes: High Performance and Comprehensive Comparison (2017) (35)
Investigation of Photon-Generated Leakage Current for High-Performance Active Matrix Micro-LED Displays (2016) (35)
Enhancement-Mode GaN MOS-HEMTs With Recess-Free Barrier Engineering and High- ${k}$ ZrO2 Gate Dielectric (2018) (35)
Epitaxial III–V-on-silicon waveguide butt-coupled photodetectors (2012) (34)
Study of GaN-Based Light-Emitting Diodes Grown on Chemical Wet-Etching-Patterned Sapphire Substrate With V-Shaped Pits Roughening Surfaces (2008) (34)
Self-organized InAs/InAlGaAs quantum dots as dislocation filters for InP films on (001) Si (2017) (33)
Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate (2019) (33)
Performance improvement of GaN-based light-emitting diodes grown on patterned Si substrate transferred to copper. (2011) (33)
Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources (2016) (32)
Material and Device Characteristics of Metamorphic ${\rm In}_{0.53}{\rm Ga}_{0.47}{\rm As}$ MOSHEMTs Grown on GaAs and Si Substrates by MOCVD (2013) (32)
Room-temperature electrically-pumped 1.5 μm InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si. (2018) (32)
Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon (2016) (31)
Admittance characterization and analysis of trap states in AlGaN/GaN heterostructures (2003) (31)
Bufferless 15 µm III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms (2020) (31)
Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors (2015) (31)
High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown (2019) (31)
AlGaAs/GaAs quantum wells with high carrier confinement and luminescence efficiencies by organometallic chemical vapor deposition (1987) (30)
Planar integration of E/D-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment (2006) (30)
AlGaAs superlattice microcoolers (2003) (29)
InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands (2018) (29)
ETB-QW InAs MOSFET with scaled body for improved electrostatics (2012) (29)
Self-aligned enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment (2005) (29)
Enhancement-mode AlGaN/GaN HEMTs on silicon substrate (2006) (28)
Interfacially Bound Exciton State in a Hybrid Structure of Monolayer WS2 and InGaN Quantum Dots. (2018) (28)
Low-resistance Pt'Pd'Au ohmic contacts to p-type AlGaN (2004) (28)
Pseudomorphic GaAs/InGaAs single quantum wells by atmospheric pressure organometallic chemical vapor deposition (1988) (28)
High-Speed Normal-Incidence p-i-n InGaAs Photodetectors Grown on Silicon Substrates by MOCVD (2012) (27)
Voltage-Controlled GaN HEMT-LED Devices as Fast-Switching and Dimmable Light Emitters (2018) (27)
High-Performance Inverted $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD (2012) (27)
Monolithic integration of III-nitride voltage-controlled light emitters with dual-wavelength photodiodes by selective-area epitaxy. (2018) (27)
High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD through Interfacial Misfit Dislocations Array (2012) (26)
Low-Leakage High-Breakdown Laterally Integrated HEMT-LED via n-GaN Electrode (2016) (26)
A Low Phase-Noise $X$-Band MMIC VCO Using High-Linearity and Low-Noise Composite-Channel ${\hbox{Al}}_{0.3}{\hbox{Ga}}_{0.7}{\hbox{N/Al}}_{0.05}{\hbox{Ga}}_{0.95}{\hbox{N/GaN}}$ HEMTs (2007) (26)
Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing (2016) (26)
Exciton photoluminescence linewidths in very narrow AlGaAs/GaAs and GaAs/InGaAs quantum wells (1988) (26)
Broadband microwave noise characteristics of high-linearity composite-channel Al/sub 0.3/Ga/sub 0.7/N/Al/sub 0.05/Ga/sub 0.95/N/GaN HEMTs (2005) (26)
Selective Area Growth of High Quality GaAs by OMCVD Using Native Oxide Masks (1987) (26)
Monolithic integration of enhancement-mode vertical driving transistorson a standard InGaN/GaN light emitting diode structure (2016) (25)
Low trap states in in situ SiNx/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition (2014) (25)
30-nm Inverted $\hbox{In}_{0.53}\hbox{Ga}_{0.47} \hbox{As}$ MOSHEMTs on Si Substrate Grown by MOCVD With Regrown Source/Drain (2012) (25)
Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD (2008) (25)
1.55-μm Lasers Epitaxially Grown on Silicon (2019) (25)
P‐34: Active Matrix Programmable Monolithic Light Emitting Diodes on Silicon (LEDoS) Displays (2011) (25)
AlGaN-GaN HEMTs on patterned silicon (111) substrate (2005) (24)
Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates (2016) (24)
Reliability of Enhancement-mode AlGaN/GaN HEMTs Fabricated by Fluorine Plasma Treatment (2007) (24)
Defect reduction in epitaxial InP on nanostructured Si (001) substrates with position-controlled seed arrays (2014) (24)
Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition (1988) (24)
DC and RF Performance of Gate-Last AlN/GaN MOSHEMTs on Si With Regrown Source/Drain (2013) (24)
Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor (2005) (24)
Monolithic integration of enhancement-and depletion-mode AlGaN/GaN HEMTs for GaN digital integrated circuits (2005) (24)
GaAs-InGaAs-GaAs Fin-Array Tunnel Diodes on (001) Si Substrates With Room-Temperature Peak-to-Valley Current Ratio of 5.4 (2016) (23)
Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters (2018) (23)
Active matrix monolithic micro‐LED full‐color micro‐display (2020) (23)
Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer (2017) (22)
Transfer of GaN-Based Light-Emitting Diodes From Silicon Growth Substrate to Copper (2010) (22)
1.55 μm band low-threshold, continuous-wave lasing from InAs/InAlGaAs quantum dot microdisks. (2017) (22)
A GaN-Based Lamb-Wave Oscillator on Silicon for High-Temperature Integrated Sensors (2013) (21)
Vertical β‐Ga2O3 Schottky Barrier Diodes with Enhanced Breakdown Voltage and High Switching Performance (2019) (21)
Nondestructive Characterization Of MOCVD-Grown GaInAs/GaAs Using Rocking Curve And Topography (1988) (21)
1.55 µm electrically pumped continuous wave lasing of quantum dash lasers grown on silicon. (2020) (21)
Reversal of light- and heavy-hole valence bands in strained GaAsP/AlGaAs quantum wells (1990) (21)
III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films (2005) (21)
Growth of ultra-high mobility In0.52Al0.48As/InxGa1−xAs (x ≥ 53%) quantum wells on Si substrates using InP/GaAs buffers by metalorganic chemical vapor deposition (2014) (21)
Analysis of slow-wave transmission lines on multi-layered semiconductor structures including conductor loss (1993) (21)
Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO as Gate Dielectric (2013) (21)
Continuous-wave lasing from InP/InGaAs nanoridges at telecommunication wavelengths (2017) (21)
Inverted-Type InGaAs Metal–Oxide–Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2 A/mm (2012) (20)
Highly ordered horizontal indium gallium arsenide/indium phosphide multi-quantum-well in wire structure on (001) silicon substrates (2016) (20)
Selective lateral epitaxy of dislocation-free InP on silicon-on-insulator (2019) (20)
Low-frequency noise properties of double channel AlGaN/GaN HEMTs (2008) (20)
Electrically pumped 1.5 μm InP-based quantum dot microring lasers directly grown on (001) Si. (2019) (20)
A monolithic InP/SOI platform for integrated photonics (2021) (20)
Performance Enhancements of Flip-Chip Light-Emitting Diodes With High-Density n-Type Point-Contacts (2014) (20)
High-Performance Green and Yellow LEDs Grown on ${\rm SiO}_{2}$ Nanorod Patterned GaN/Si Templates (2013) (20)
High-Speed InGaAs Photodetectors by Selective-Area MOCVD Toward Optoelectronic Integrated Circuits (2014) (20)
InGaN-based light-emitting diodes grown and fabricated on nanopatterned Si substrates (2010) (19)
Low-Threshold Epitaxially Grown 1.3-μm InAs Quantum Dot Lasers on Patterned (001) Si (2019) (19)
Surface acoustic wave device on AlGaN∕GaN heterostructure using two-dimensional electron gas interdigital transducers (2007) (19)
III–V lasers selectively grown on (001) silicon (2020) (19)
Al0.3Ga0.7N/Al0.05Ga0.95N/GaN composite-channel HEMTs with enhanced linearity (2004) (19)
AlInAs/GaInAs mHEMTs on silicon substrates grown By MOCVD (2008) (19)
Characterization of in situ SiNx thin film grown on AlN/GaN heterostructure by metal-organic chemical vapor deposition (2014) (18)
Highly linear Al0.3Ga0.7N-Al0.05Ga0.95N-GaN composite-channel HEMTs (2005) (18)
GaAs Solar Cells on Nanopatterned Si Substrates (2018) (17)
Cathodoluminescence Study of InGaN/GaN Quantum-Well LED Structures Grown on a Si Substrate (2007) (17)
30nm enhancement-mode In0.53Ga0.47As MOSFETs on Si substrates grown by MOCVD exhibiting high transconductance and low on-resistance (2012) (17)
Optical crosstalk analysis of micro‐pixelated GaN‐based light‐emitting diodes on sapphire and Si substrates (2016) (17)
GaN-Based ${\rm S}_{0}$ -Wave Sensors on Silicon for Chemical and Biological Sensing in Liquid Environments (2013) (17)
Efficiency enhancement of UV/blue light emitting diodes via nanoscaled epitaxial lateral overgrowth of GaN on a SiO2 nanorod-array patterned sapphire substrate (2008) (17)
Thermally activated pop-in and indentation size effects in GaN films (2012) (16)
Optical and Electrical Properties of GaN-Based Light Emitting Diodes Grown on Micro- and Nano-Scale Patterned Si Substrate (2011) (16)
GaN-on-patterned-silicon (GPS) technique for fabrication of GaN-based MEMS (2006) (16)
Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiNx Gate Dielectric (2015) (16)
Microbridge tests on gallium nitride thin films (2009) (16)
60.4: A Novel Full‐Color 3LED Projection System using R‐G‐B Light Emitting Diodes on Silicon (LEDoS) Micro‐displays (2013) (16)
Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD (2011) (16)
Vertical LEDs on Rigid and Flexible Substrates Using GaN-on-Si Epilayers and Au-Free Bonding (2016) (16)
Efficient wet etching of GaN and p-GaN assisted with chopped UV source (2004) (16)
Monolithic integration of a 94 GHz AlGaAs/GaAs 2DEG mixer on quartz substrate by epitaxial lift-off (1995) (15)
Switching performance of quasi‐vertical GaN‐based p‐i‐n diodes on Si (2017) (15)
High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric (2018) (15)
High gain and high ultraviolet/visible rejection ratio photodetectors using p-GaN/AlGaN/GaN heterostructures grown on Si (2020) (14)
Integration of enhancement and depletion‐mode AlGaN/GaN MIS‐HFETs by fluoride‐based plasma treatment (2007) (14)
Determining phonon deformation potentials of hexagonal GaN with stress modulation (2010) (14)
Critical thickness of GaAs/InGaAs and AlGaAs/GaAsP strained quantum wells grown by organometallic chemical vapor deposition (1990) (14)
A strain relief mode at interface of GaSb/GaAs grown by metalorganic chemical vapor deposition (2011) (14)
In situ growth of SiNx as gate dielectric and surface passivation for AlN/GaN heterostructures by metalorganic chemical vapor deposition (2014) (14)
Enhanced optical properties of InAs/InAlGaAs/InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique (2016) (13)
Parametric study of high-performance 1.55 μm InAs quantum dot microdisk lasers on Si. (2017) (13)
Dependence of polarization mode and threshold current on tensile strain in AlGaAs/GaAsP quantum well lasers (1997) (13)
High Performance Monolithically Integrated GaN Driving VMOSFET on LED (2017) (13)
Selectable Synthesis of 2-D MoS2 and Its Electronic Devices: From Isolated Triangular Islands to Large-Area Continuous Thin Film (2016) (13)
Room temperature III–V nanolasers with distributed Bragg reflectors epitaxially grown on (001) silicon-on-insulators (2019) (13)
Investigation of Forward Voltage Uniformity in Monolithic Light-Emitting Diode Arrays (2013) (13)
Metamorphic Heterostructure InP/GaAsSb/InP HBTs on GaAs Substrates by MOCVD (2007) (13)
A low substrate loss, monolithically integrated power inductor for compact LED drivers (2015) (12)
Fabrication of 100-nm Metamorphic AlInAs/GaInAs HEMTs Grown on Si Substrates by MOCVD (2012) (12)
Monolithic full‐color microdisplay using patterned quantum dot photoresist on dual‐wavelength LED epilayers (2020) (12)
Exciton aggregation induced photoluminescence enhancement of monolayer WS2 (2019) (12)
Ultralow reverse leakage current in AlGaN/GaN lateral Schottky barrier diodes grown on bulk GaN substrate (2016) (12)
Isoelectronic indium-surfactant-doped Al0.3Ga0.7N∕GaN high electron mobility transistors (2006) (12)
Sub-mA threshold 1.3 μm CW lasing from electrically pumped micro-rings grown on (001) Si (2017) (12)
Selectively Grown III-V Lasers for Integrated Si-Photonics (2021) (12)
1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current (2021) (12)
Enhanced-performance of AlGaN-GaN HEMTs grown on grooved sapphire substrates (2005) (12)
A Novel Si–GaN Monolithic Integration Technology for a High-Voltage Cascoded Diode (2017) (11)
Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric (2018) (11)
InAlGaAs/InAlAs MQWs on Si Substrate (2015) (11)
Optically pumped submillimeter wave semiconductor lasers (1992) (11)
Tensile strain and threshold currents in GaAsP-AlGaAs single-quantum-well lasers (1996) (11)
Comparison of the AlN and GaN crystalline quality on 2-inch silicon substrate via two growth methods (2020) (11)
A Novel 700 V Monolithically Integrated Si-GaN Cascoded Field Effect Transistor (2018) (11)
Thermally activated carrier transfer processes in InGaN∕GaN multi-quantum-well light-emitting devices (2005) (11)
AlGaN/GaN/InGaN/GaN HEMTs with an InGaN‐notch (2006) (11)
HRTEM investigation of high-reflectance AlN/GaN distributed Bragg-reflectors by inserting AlN/GaN superlattice (2009) (11)
Resonant tunneling injection quantum-well lasers (1995) (11)
Self-Powered Fast-Response X-Ray Detectors Based on Vertical GaN p-n Diodes (2019) (11)
MOVPE growth of in situ SiNx/AlN/GaN MISHEMTs with low leakage current and high on/off current ratio (2015) (10)
Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon (2009) (10)
GaN on patterned silicon (GPS) technique for fabrication of GaN-based MEMS (2005) (10)
Leakage Current Reduction in β-Ga2O3 Schottky Barrier Diodes by CF4 Plasma Treatment (2020) (10)
Low-efficiency-droop InGaN quantum dot light-emitting diodes operating in the “green gap” (2020) (10)
848 ppi high-brightness active-matrix micro-LED micro-display using GaN-on-Si epi-wafers towards mass production. (2021) (10)
GaN on patterned silicon (GPS) technique for GaN-based integrated microsensors (2005) (9)
GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors (2004) (9)
An Auto-Zero-Voltage-Switching Quasi-Resonant LED Driver With GaN FETs and Fully Integrated LED Shunt Protectors (2018) (9)
1 . 55 μ m room-temperature lasing from subwavelength quantum-dot microdisks directly grown on ( 001 ) (2017) (9)
In situ SiNx gate dielectric by MOCVD for low‐leakage‐current ultra‐thin‐barrier AlN/GaN MISHEMTs on Si (2014) (9)
Cost-effective and eco-friendly LED system-on-a-chip (SoC) (2013) (9)
Enhancement-mode metamorphic InA1As/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF4 plasma treatment (2007) (9)
Surface morphology and optical properties of InGaN quantum dots with varying growth interruption time (2019) (9)
Light extraction enhancement from GaN‐based thin‐film LEDs grown on silicon after substrate removal using HNA solution (2010) (8)
Characterization of GaN grown on patterned Si(111) substrates (2004) (8)
Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors (2018) (8)
Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth (2005) (8)
High performance III-V photodetectors on a monolithic InP/SOI platform (2021) (8)
Micrometer-scale InP selectively grown on SOI for fully integrated Si-photonics (2020) (8)
MOCVD grown Metamorphic InAlAs/InGaAs HEMTs on GaAs substrates (2005) (8)
Al/sub 0.3/Ga/sub 0.7/N/Al/sub 0.05/Ga/sub 0.95/N/GaN composite-channel HEMTs with enhanced linearity (2004) (8)
Improvement of gas-switching abruptness for atmospheric pressure organometallic vapor phase epitaxy (1994) (8)
Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage (2006) (7)
Monolithically integrated drivers for eco-friendly LED system-on-a-chip applications (2014) (7)
Fully-integrated AMLED micro display system with a hybrid voltage regulator (2017) (7)
Off‐state drain leakage reduction by post metallization annealing for Al2O3/GaN/AlGaN/GaN MOSHEMTs on Si (2016) (7)
Temperature dependence and persistent conductivity of GaAs MESFETs with superlattice buffers (1988) (7)
Comparison of growth structures for continuous-wave electrically pumped 155 μm quantum dash lasers grown on (001) Si (2020) (7)
25-5: Distinguished Student Paper: Fully-Integrated Active Matrix Programmable UV and Blue Micro-LED Display System-on-Panel (SoP) (2017) (7)
Telecom InP-based quantum dash photodetectors grown on Si (2021) (7)
Fin-Array Tunneling Trigger With Tunable Hysteresis on (001) Silicon Substrate (2017) (7)
Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD (2010) (7)
1.9‐GHz low noise amplifier using high‐linearity and low‐noise composite‐channel HEMTs (2007) (7)
Improved GaN grown on Si(111) substrate using ammonia flow modulation on SiNx mask layer by MOCVD (2009) (7)
Improved breakdown characteristics of monolithically integrated III-nitride HEMT-LED devices using carbon doping (2015) (7)
Phonon deformation potentials of hexagonal GaN studied by biaxial stress modulation (2011) (7)
High‐efficiency blue and green LEDs grown on Si with 5 micrometer thick GaN buffer (2014) (7)
Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform. (2021) (7)
Monolithic Integration of Tunnel Diode-Based Inverters on Exact (001) Si Substrates (2016) (7)
Device Isolation by Plasma Treatment for Planar Integration of Enhancement/Depletion-Mode AlGaN/GaN High Electron Mobility Transistors (2007) (7)
Fabrication and Characterization of High-Voltage LEDs Using Photoresist-Filled-Trench Technique (2016) (6)
Recent Advances in Light Sources on Silicon (2022) (6)
Enhancement-mode Lg = 50 nm metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with fmax surpassing 408 GHz (2014) (6)
Optimization of electrode structure for flip‐chip HVLED via two‐level metallization (2016) (6)
GaN-based lamb-wave mass-sensors on silicon substrates (2010) (6)
Enhanced gate stack stability in GaN transistors with gate dielectric of bilayer SiNx by low pressure chemical vapor deposition (2018) (6)
Multi-heterojunction InAs/GaSb nano-ridges directly grown on (001) Si (2020) (6)
Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon (2016) (6)
Through silicon underfill dispensing for 3D die/interposer stacking (2014) (6)
A new analytical technique of photoluminescence for optimization of organometallic chemical vapor deposition (1986) (6)
Effect of post‐gate RTA on leakage current (Ioff) in GaN MOSHEMTs (2012) (6)
Growth of III–V semiconductors and lasers on silicon substrates by MOCVD (2019) (6)
MOCVD growth of InP-based 1.3 μm quantum dash lasers on (001) Si (2020) (6)
Enhancement-mode AlN/GaN MOSHEMTs fabricated by selective area regrowth of AlGaN barrier layer (2013) (6)
Improved crystalline quality and light output power of GaN-based light- emitting diodes grown on Si substrate by buffer optimization (2012) (6)
III–V Superlattices on InP/Si Metamorphic Buffer Layers for λ≈4.8 μm Quantum Cascade Lasers (2018) (5)
23‐5: Late‐News Paper: High‐Resolution Monolithic Micro‐LED Full‐color Micro‐display (2020) (5)
Improved surface morphology and mobility of AlGaN/GaN HEMT grown on silicon substrate (2012) (5)
Characterization of fluorine‐plasma‐induced deep centers in AlGaN/GaN heterostructure by persistent photoconductivity (2008) (5)
Temperature dependence of cathodoluminescence spectra and stress analysis of a GaN layer grown on a mesa structured Si substrate (2007) (5)
Enhancing ON- and OFF-State Performance of Quasi-Vertical GaN Trench MOSFETs on Sapphire With Reduced Interface Charges and a Thick Bottom Dielectric (2022) (5)
Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD (2011) (5)
Temperature stability of AlxGa1−xAs (0≤x≤1) thermal oxide masks for selective-area epitaxy (1988) (5)
FIELD-INDUCED ABSORPTION-EDGE MERGING IN TENSILE-STRAINED GAASP QUANTUM-WELLS (1993) (5)
Lg = 100 nm T-shaped gate AlGaN/GaN HEMTs on Si substrates with non-planar source/drain regrowth of highly-doped n+-GaN layer by MOCVD (2014) (5)
Fabrication and improved performance of AlGaN/GaN HEMTs with regrown ohmic contacts and passivation-first process (2016) (5)
Fabrication of suspended GaN microstructures using GaN‐on‐patterned‐silicon (GPS) technique (2006) (5)
Effects of growth interruption on the optical properties of AIGaAs/GaAs and GaAs/InGaAs quantum wells grown by atmospheric pressure organometallic chemical vapor deposition (1991) (5)
Optimization of a Common Buffer Platform for Monolithic Integration of InGaN/GaN Light-Emitting Diodes and AlGaN/GaN High-Electron-Mobility Transistors (2016) (5)
Comparison of Ni/Au, ITO, and ATO-based current spreading layers for near-ultraviolet light-emitting diodes (2007) (5)
GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth (2017) (5)
Effects of polyimide passivation on the photoluminescence of high‐purity epitaxial GaAs (1988) (5)
Intersubband absorption characteristics in OMVPE grown delta-doped GaAs/AlGAs multiple quantum well structures (2000) (5)
InAs nano-ridges and thin films grown on (001) silicon substrates (2020) (5)
Microwave Noise Characterization of Enhancement-Mode AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs (2007) (5)
Tristate Memory Cells Using Double-Peaked Fin-Array III–V Tunnel Diodes Monolithically Grown on (001) Silicon Substrates (2017) (5)
An AMLED microdisplay driver SoC with built-in 1.25-Mb/s VLC transmitter (2015) (4)
Self-aligned gate-last enhancement- and depletion-mode AlN/GaN MOSHEMTs on Si (2014) (4)
Influence of oxidation and annealing temperatures on quality of Ga 2 O 3 film grown on GaN (2006) (4)
Exciton dynamics and valence band mixing in tensile-strained semiconductor quantum wells (2000) (4)
Quantum dot lasers grown on (001) Si substrate for integration with amorphous Si waveguides (2017) (4)
GaN based active matrix light emitting diode array by flip-chip technology (2008) (4)
A power inductor integration technology using a silicon interposer for DC-DC converter applications (2018) (4)
Tensile‐strained barrier GaAsP/GaAs single quantum‐well lasers (1996) (4)
Thin-barrier heterostructures enabled normally-OFF GaN high electron mobility transistors (2021) (4)
Doping Concentration and Structural Dependences of the Thermal Stability of the 2DEG in GaN-Based High-Electron-Mobility Transistor Structures (2004) (4)
6C-5 Planar Integration of SAW Filter with HEMT on AlGaN/GaN Heterostructure Using Fluoride-based Plasma Treatment (2006) (4)
Growth and Characterizations of GaN-Based LEDs Grown on Wet-Etched Stripe-Patterned Sapphire Substrates (2008) (4)
AlGaAs/GaAs quasi-bulk effect mixers: Analysis and experiments (1992) (4)
A Novel Full-Color 3 LED Projection System using RGB Light Emitting Diodes on Silicon ( LEDoS ) Micro-displays (2013) (4)
Transistors and tunnel diodes enabled by large-scale MoS2 nanosheets grown on GaN (2017) (4)
Ultra-low threshold green InGaN quantum dot microdisk lasers grown on silicon (2020) (4)
Exciton dynamics and spin-flip in tensile strained quantum wells (1996) (4)
III–V micro- and nano-lasers deposited on amorphous SiO2 (2020) (4)
Comparative Study on Dynamic Characteristics of GaN HEMT at 300K and 150K (2020) (4)
Progress on the GaN-based LEDs and LDs (2012) (4)
InP Layer Transfer with Masked Implantation (2009) (4)
Hetero-epitaxy of III-V compounds lattice-matched to InP by MOCVD for device applications (2009) (4)
C and L band room-temperature continuous-wave InP-based microdisk lasers grown on silicon. (2021) (4)
Hetero-Epitaxy of III-V Compounds by MOCVD on Silicon Substrates (2010) (4)
Monolithic integrated C-band low noise amplifier using AlGaN/graded-AlGaN/GaN HEMTs (2005) (4)
High-speed InGaAs photodetectors with low dark current selectively grown on SOI substrate (2014) (4)
In0.53Ga0.47As MOS‐HEMTs on GaAs and Si substrates grown by MOCVD (2012) (4)
Improved AlGaN/GaN HEMTs grown on Si substrates by MOCVD (2010) (4)
A novel GaN-based monolithic SAW/HEMT oscillator on silicon (2012) (4)
GaN Single Nanowire p–i–n Diode for High-Temperature Operations (2020) (4)
Effect of antimony ambience on the interfacial misfit dislocations array in a GaSb epilayer grown on a GaAs substrate by MOCVD (2012) (4)
Optical gain and absorption of 1.55 μm InAs quantum dash lasers on silicon substrate (2021) (4)
Correlation of in-situ reflectance spectra and resistivity of GaN/Al2O3 interfacial layer in metalorganic chemical vapor deposition (2005) (3)
Comparison of static and dynamic characteristics of 1550 nm quantum dash and quantum well lasers. (2020) (3)
A Planar Integration Process for E/D-mode AlGaN/GaN HEMT DCFL Integrated Circuits (2006) (3)
Comparison of temperature dependent electroluminescence of InGaN/GaN and AlGaInP based LEDs (2003) (3)
Mobility profiling of GaAs power FET's by magnetotransconductance measurements (1987) (3)
Valence band offsets in strained GaAs1−xPx/GaAs heterojunctions (1995) (3)
Normally-off AlGaN/GaN Low-Density-Drain HEMTs (LDD-HEMT) with Enhanced Breakdown Voltage and Suppressed Current Collapse (2007) (3)
Characteristic temperature study of GaAsP–AlGaAs tensile strained quantum well lasers (2000) (3)
OMVPE growth of P-type GaN using solution Cp2Mg (2001) (3)
In situ thermal oxidation for surface cleaning and mask generation prior to selective area epitaxy (1988) (3)
Integration Scheme toward LED System-on-a-Chip (SoC) (2014) (3)
High-quality two-dimensional electron gas in Al/sub x/Ga/sub 1-x/As/GaAs heterostructures by LP-OMVPE (1993) (3)
Fir photoconductivity in epitaxial InP (1983) (3)
A novel RF high-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure (2005) (2)
Experimental characterization of the fully integrated Si-GaN cascoded FET (2018) (2)
Optimization of undoped gaas by low-pressure OMVPE using trimethylgallium (1992) (2)
4‐1: Invited Paper: Micro‐LED displays: can the monolithic approach produce full‐color? (2019) (2)
Electrically injected 1.64µm emitting In0.65Ga0.35As 3-QW laser diodes grown on mismatched substrates by MOVPE. (2019) (2)
Ultrahigh mobility two‐dimensional electron gas in AlxGa1−xAs/GaAs heterostructures by organometallic vapor phase epitaxy (1993) (2)
Critical Thickness of GaAs/InGaAs and AlGaAs/GaAsP Quantum Wells Grown by Atmospheric Pressure OMCVD (1989) (2)
Growth and characterization of horizontal GaN wires on silicon (2014) (2)
Monolithic Thin Film Red LED Active-Matrix Micro-Display by Flip-Chip Technology (2021) (2)
Forward Conduction Instability of Quasi-Vertical GaN p-i-n Diodes on Si Substrates (2020) (2)
Switching characteristics of monolithically integrated Si-GaN cascoded rectifiers (2017) (2)
55 μm lasers epitaxially grown on silicon (2)
Planar Two-dimensional Electron Gas (2DEG) IDT SAW Filter on AlGaN/GaN Heterostructure (2007) (2)
Electrically pumped 1 . 5 μ m InP-based quantum dot microring lasers directly grown on ( 001 ) (2019) (2)
Effects of oxidation temperature on Ga2O3film thermally grown on GaN (2005) (2)
Focal plane arrays for submillimeter waves using two-dimensional electron gas elements: A grant under the Innovative Research Program (1992) (2)
Inverted-type InAlAs/InGaAs MOSHEMT with Regrown Source/Drain Exhibiting High Current and Low On-resistance (2012) (2)
High-performance AlN/GaN MOSHEMTs with regrown ohmic contacts by MOCVD (2012) (2)
Hetero-epitaxy of L g = 0.13-μm metamorphic AlInAs/GaInAs HEMT on Si substrates by MOCVD for logic applications (2015) (2)
Exciton dynamics and spin relaxation in unstrained and tensile-strained quantum wells (1996) (2)
GaN based light-emitting diode on silicon (LEDoS) micro-displays for BLU-free full-color projector application (2013) (2)
Transient leakage current technique for MIS HEMT (Al2O3/AlGaN/GaN) dielectric semiconductor interface property characterization (2008) (2)
InAlAs/InGaAs metamorphic HEMT and MOS-HEMT with regrown Source/Drain by MOCVD (2011) (2)
Trap States Induced Frequency Dispersion of AlGaN/GaN Heterostructure Field-Effect Transistors (2003) (2)
Broadband telecom emission from InP/InGaAs nano-ridge lasers on silicon-on-insulator substrate (2019) (2)
Metamorphic AlInAs/GaInAs HEMTs on silicon substrates by MOCVD (2011) (2)
Solid-state lighting with high brightness, high efficiency, and low cost (2014) (2)
Enhanced optical properties of InAs / InAlGaAs / InP quantum dots grown by metal-organic chemical vapor deposition using a double-cap technique (2015) (2)
InAs quantum dot micro-disk lasers grown on (001) Si emitting at communication wavelengths (2017) (1)
Fabrication of Position-controllable GaN Nanostructures (2007) (1)
Resistivity Control in Unintentionally Doped GaN Films Grown on Si (111) Substrates by MOCVD (2011) (1)
III–V-IV integration toward electronics and photonics convergence on a silicon platform (2014) (1)
Dual wavelength emission InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy (2004) (1)
GaAs/In 0.2 Ga 0.8 As Fin-Array-Esaki Tunnel Diodes Fabricated on (001) Silicon by Aspect Ratio Trapping (2015) (1)
High performance self-aligned AlN/GaN MISHEMT with in-situ SiNx gate dielectric and regrown source/drain (2014) (1)
GaAs Esaki junctions with autocompensated impurities in the n side by metalorganic chemical vapor deposition (2004) (1)
Magneto-optical properties of biaxially strained quantum wells (1994) (1)
1 . 3 μ m submilliamp threshold quantum dot micro-lasers on (2017) (1)
GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates. (2021) (1)
Integration of III-V Compounds on Silicon by Hetero-epitaxy (2018) (1)
High-performance implant-free InGaAs MOSFETs on GaAs substrate grown by MOCVD (2010) (1)
AlGaN/GaN/Graded-AlGaN double heterostructure HEMT (2003) (1)
Simultaneously Enhancing Internal and Extraction Efficiencies of GaN-based Light Emitting Diodes Via Chemical-Wet-Etching Patterned-Sapphire-Substrate (CWE-PSS) (2007) (1)
Exciton trapping in strained GaAsP quantum wells (1992) (1)
Monolithic μ-LED Full-Color Micro-Displays (2019) (1)
Photoluminescence Excitation Spectroscopy of Strained Ingaas/GaAs Quantum Wells (1989) (1)
High Responsivity and Low Dark Current Ultraviolet Photodetectors Using p-GaN/AlGaN/GaN Heterostructure (2019) (1)
Metamorphic Growth of III-V Devices on Silicon Toward Electronic-Photonic Monolithic Integration (2015) (1)
31.3: Low Optical Crosstalk Micro‐LED Micro‐Display with Semi‐Sphere Micro‐Lens for Light Collimation (2018) (1)
Effects of Double-cap Technique on the Improvement of InAs/InAlGaAs/InP Quantum Dots Grown by Metal-organic Chemical Vapor Deposition (2015) (1)
Analysis on the CTLM and LTLM applicability for GaN HEMTs structure alloyed ohmic contact resistance evaluation (2013) (1)
InGaN quantum dots with short exciton lifetimes grown on polar c-plane by metal-organic chemical vapor deposition (2020) (1)
Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer (2022) (1)
Reduction of Current Collapse in an un-passivated AlGaN-GaN Double-Channel HEMT (2004) (1)
Generation Recombination Noise in Dual Channel AlGaN/GaN High Electron Mobility Transistor (2006) (1)
Quantum well structures with almost-degenerate valence bands (1994) (1)
Investigation of the interface traps and current collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs (2016) (1)
Effects of p-GaN Body Doping Concentration on the ON-State Performance of Vertical GaN Trench MOSFETs (2021) (1)
Gain Improvement of Enhancement-mode AlGaN/GaN HEMTs Using Dual-Gate Architectures (2007) (1)
Heterointerface study of InAs/GaSb nanoridge heterostructures grown by metal organic chemical vapor deposition on V-grooved Si (0 0 1) substrates (2018) (1)
Room-Temperature Electrically Pumped InP-based Laser Directly Grown on on-axis (001) Silicon (2018) (1)
InP lattice-matched HEMT with regrown Source/Drain by MOCVD (2011) (1)
Growth Characteristics of AlGaN/GaN HEMTs on Patterned Si (111) Substrates Using Double AlN Interlayers by MOCVD (2011) (1)
Device Isolation by Plasma Treatment for Planar Integration of E/D-mode AlGaN/GaN HEMTs (2006) (1)
Low-Flicker Lighting From High-Voltage LEDs Driven by a Single Converter-Free Driver (2017) (1)
Comparison of electroabsorption in tensile-strained and lattice-matched GaAs(P)/AlGaAs quantum wells (1993) (1)
GaN-based monolithic LED micro-arrays (2009) (1)
Enhanced optical performance of monolithically integrated HEMT-LED by buffer optimization (2015) (1)
Full-color micro-display by heterogeneous integration of InGaN blue/green dual-wavelength and AlGaInP red LEDs. (2022) (1)
Effect of high-temperature thermal treatment on AlGaN/GaN HEMT Epi for monolithic integration (2015) (1)
Selective lateral photoelectrochemical wet etching of InGaN nanorods (2020) (1)
Growth of low defect-density InP on exact Si (001) substrates by metalorganic chemical vapor deposition with position-controlled seed arrays (2014) (1)
Ambipolar Photocarrier Doping and Transport in Monolayer WS₂ by Forming a Graphene/WS₂/Quantum Dots Heterostructure (2021) (1)
III-V Lasers Emitting at 1.3 to 1.5 µm grown on (001) silicon by MOCVD (invited) (2019) (0)
Optimization of GaAs buffer layer for high quality InP epitaxial layer grown on Si substrate for electronic devices applications by MOCVD (2010) (0)
AN ovel GaN -based Monolithic SAW IHEMT Oscillator on Silicon (2012) (0)
Effects of NO Annealing on the Characteristics of GaN MIS Capacitor (2006) (0)
Control of Threshold Voltage in Ultrathin-barrier AlGaN/GaN based MISHEMTs with Low-frequency SiNx Gate Dielectric and Al2O3 Interfacial Layer (2015) (0)
Fully-vertical GaN-based p-i-n Diodes on Si (2016) (0)
1-µm InAs quantum dot micro-disk lasers directly grown on exact (001) Si (2016) (0)
Lamb-wave UV-sensors Fabricated with GaN-based Thin Films on Silicon Substrates (2010) (0)
High-Performance Metamorphic InP/GaAsSb/InP “Type-II” DHBTs Grown on GaAs Substrates (2005) (0)
Room temperature lasing from InP/InGaAs nano-ridges at telecom-bands (2018) (0)
GaN-based Direct-coupled FET Logic (DCFL) Digital Circuits Operating at 375℃ (2006) (0)
Optically-pumped InP Quantum Dot Lasers Grown on (001) Silicon (2021) (0)
Gain-switching of 1.55 µm InP-based Qdash lasers grown on Si (2022) (0)
Temperature characteristics of GaAsP/AlGaAs tensile strained quantum well lasers (1996) (0)
Tensile-strained AlGaAs/GaAsP single quantum-well lasers (1994) (0)
Epitaxial growth of III-nitride LEDs on porous Si substrates (2010) (0)
Ultra-low threshold optically pumped single mode InP micro-lasers grown on SOI (2021) (0)
Room Temperature CW ! " # $ % & $ Single Mode Lasing of InAs Quantum Dot Micro-disk Lasers Grown on ( 001 ) Si (2017) (0)
Optical gain and absorption of 1.55 um emitting InAs quantum dot lasers directly grown on (001) silicon (2019) (0)
III-V Micro/Nano-lasers and photodetectors in the Telecom Band Grown on SOI (2022) (0)
0.3-µm gate-length metamorphic AlInAs/GaInAs HEMTs on Silicon substrates by MOCVD (2010) (0)
ROOM LIGHT: THE GREMLIN CLOUDING AMPLIFIER TESTS. (1986) (0)
Gain switching of 1.55 μm QDash Lasers directly grown on Silicon (2021) (0)
Integrated Electrically-pumped Quantum-dot Micro-lasers with Tunable Single-mode Operation (2019) (0)
Enhanced stimulated emission of excited states in quantum wells by resonant tunneling (1994) (0)
High voltage low current collapse AlGaN/GaN MISHEMTs with in-situ SiN gate dielectric (2016) (0)
Design, fabrication, transfer bonding and active matrix driving of GaN-based micro-LEDs displays (2018) (0)
Reduced Gate-bias dependence of 2DEG mobility in a Composite-Channel HEMT (2005) (0)
Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate (2019) (0)
InAs/InAlGaAs quantum dot-on-silicon microdisk lasers operating at 1.55 μm (2017) (0)
III-Nitride LEDs Grown on Porous Si Substrtes (2010) (0)
Monolithic Micro-LED Full-Color Micro-Displays (2019) (0)
Evidence of mobile holes on GaN HFET barrier layer surface - root cause of high power transistoramplifier current collapse (2008) (0)
InP-based Lasers Grown on 220 nm SOI by Lateral/vertical Aspect Ratio Trapping (2020) (0)
Reliability ofEnhancement-mode AlGaN/GaNHEMTs Fabricated byFluorine PlasmaTreatment (2007) (0)
LEDs on Si Substrates (2010) (0)
Monolithic Growth of InAs Quantum Dots Lasers on (001) Silicon Emitting at 1.55 μm (2019) (0)
Fabrication of 0.3-μm T-gate metamorphic AlInAs/GaInAs HEMTs on silicon substrates using metal organic chemical vapor deposition (2012) (0)
Comparative Analysis of Small Signal and Large Signal parameters in Heterostructure Field Effect Transistors (2019) (0)
The Relationship of Magnetotransconductance Mobility Profiles and RF Performance of GaAs FETs (1985) (0)
Monolithically integrated GaN-based HEMT-LED and InGaN/GaN photodiodes for on-chip optical interconnects (2016) (0)
High Performance Field Effect Transistors Based on Large Area Mos 2 Thin Films (2015) (0)
High quality GaAs film on Si (100) with excellent surface morphology grown by MOCVD (2008) (0)
Thermal transfer of excess carriers from the GaN barrier to the InGaN quantum dots for efficient electroluminescence (2004) (0)
Monolithic Integration of III-nitride LEDs and Driver HEMT Transistors by MOCVD (2014) (0)
Two-dimensional electron gas (2DEG) IDT SAW devices on AlGaN/GaN heterostructure (2007) (0)
Improved GaN-based LED Grown on Silicon (111) Using Stress/Dislocation-Engineering Interlayers (2012) (0)
Suppression of Current Collapse in AlGaN/GaN MISHEMTs using in-situ SiN Gate Dielectric and PECVD SiN Passivation (2016) (0)
Improved GaN grown on Si(111) substrates using varied ammonia flow on SiNx mask layer by MOCVD (2008) (0)
In situ growth of SiN x as gate dielectric and surface passivation for AlN / GaN heterostructures by metalorganic chemical vapor deposition (2014) (0)
All-silicon and epitaxial hybrid III-V-silicon photodetectors for on-chip optical interconnection (2013) (0)
InP/GaAsP DWELL lasers grown on (001) Si emitting at 740 nm (2022) (0)
Material characteristics of InGaN based light emitting diodes grown on porous Si substrates (2011) (0)
Orderly Array of In-Plane GaAs Nanowires on Exact (001) Silicon for Antiphase-Domain-Free GaAs Thin Films (2015) (0)
High speed and low dark current Si-waveguide coupled III-V photodetectors selectively grown on SOI (2022) (0)
Selective Epitaxy Of Quantum Well Structures By Atmospheric Pressure OMCVD (1987) (0)
Epitaxial Lateral Overgrowth of GaN-based Light Emitting Diodes on SiO2 Nanorod-Array Patterned Sapphire Substrates by MOCVD (2008) (0)
Fabrication of vertical position-controllable GaN nanowires on (111) Si substrate (2007) (0)
Editorial Solid-State Lighting with High Brightness, High Efficiency, and Low Cost (2014) (0)
Thermally activated carriers transfer process for the success of InGaN/GaN multi‐quantum well light emitting devices (2005) (0)
Comparison of Ni/Au, Ag/ITO, and Ag/ATO Curent-spreading Layers for Violet Light-Emitting Diodes (2006) (0)
Photoluminescence characteristics of selectively grown GaAs and AlGaAs/GaAs quantum wells (1987) (0)
GaAs on (001) Si templates for near infrared InP QD lasers (2022) (0)
Will LED on Si become Mainstream Technology (2010) (0)
Growth and Characterization of GaN Wires Grown on Nano-Scale Porous SiO 2 Patterned GaN/Si Templates (2014) (0)
Exciton dynamics in 121A GaAs and GaAsP QWs having different valence band structures arising from built-in biaxial stress (1992) (0)
High speed Si-waveguide coupled III-V photodetectors selectively grown on SOI by lateral MOCVD (2022) (0)
Resonant tunneling injection lasers (1998) (0)
CSW2019 Program (2019) (0)
In situ monitoring of GaAs grown on Si(100) by Metal Organic Chemical Vapor Deposition (2010) (0)
Triple reduction of threshold current for 1.3 μm InAs quantum dot lasers on patterned, on-axis (001) Si (2019) (0)
Characteristics of submicron-footprint TiO2 based AlGaN/GaN MOSHEMT on SiC substrate (2013) (0)
Buffer Structure Optimization of Monolithically Integrated HEMT-LED Using a Metal-Interconnection-Free Integration Scheme (2015) (0)
Improved buffer resistivity for AlGaN/GaN HEMTs with low pressure and medium temperature GaN buffer layer (2014) (0)
AlGaN/GaN/graded-AlGaN Double-Heterostructure HEMTs (2003) (0)
1.5 μm Room-Temperature Electrically Pumped Quantum Dot Lasers Monolithically Grown on Exact (001) Si (2018) (0)
Comparison of Dynamic Characteristics of Quantum Dash and Quantum Well Lasers on InP (2020) (0)
1.55 μm Quantum Dash CW Lasers on Planar (001) Si (2020) (0)
Electrically pumped InP/GaAsP quantum dot lasers grown on (001) Si emitting at 750 nm. (2022) (0)
Metamorphic p-i-n InGaAs photodetectors grown by MOCVD (2011) (0)
Room temperature CW 1.3 μm single mode lasing of InAs quantum dot micro-disk lasers grown on (001) Si (2016) (0)
Integrated Magnetics for Eco-friendly LED System-on-a-Chip Applications (2014) (0)
High-resolution Light Emitting Diode on Silicon (LEDoS) Micro-display (2010) (0)
1 . 3 μm quantum-dot micro-disk lasers directly grown on ( 001 ) silicon (2016) (0)
Electrically injected $1.64\ \boldsymbol{\mu} \mathbf{m}$-emitting In0.65Ga0.35As 3-QW laser diodes grown on mismatched substrates by MOVPE (2019) (0)
Growth of butt-coupled p-i-n InGaAs waveguide photodetectors by MOCVD (2012) (0)
Quantum-well lasers pumped by excited-state resonant-tunneling injection (1995) (0)
Slow relaxation and electric field quenching of persistent conductivity in GaAs metal‐semiconductor field‐effect transistors with different buffer layer structures (1987) (0)
Efficient use of uniform GaN HVLEDs for small-flicker general illumination applications with converter-free LED drivers (2016) (0)
Integration of InP/InGaAs/InP p-i-n photodiodes on silicon via wafer bonding and hydrogen-induced layer exfoliation (2009) (0)
III-Nitride Devices on Silicon Substrates by MOCVD (2010) (0)
SiN-masked GaN-on-patterned-silicon (GPS) technique for fabrication of suspended GaN microstructures (2006) (0)
Low noise distributed amplifier using composite-channel Al 0.3 Ga0.7N/Al 0.05 Ga 0.95 N/GaN HEMTs (2007) (0)
Core Technologies for III-Nitride Integrated Microsensors (2006) (0)
Normally-off metamorphic AlInAs/AlInAs HEMTs on Si substrates grown by MOCVD (2015) (0)
Selective regrowth of InGaAs/InP MQWs on SOI for telecom band emission (2022) (0)
Mastering the Marriage of III-Vs and Silicon (2016) (0)
The Excellent Full-color Micro Display Dominated by RGB Quantum Dots (2015) (0)
InAs/GaAs quantum dot lasers on exact GaP/Si (001) and other templates (2017) (0)
A monolithic InP/SOI platform for integrated photonics (2021) (0)
Room Temperature 1.55 pm Lasing of Sub-wavelength Quantum-dot Lasers Epitaxially Grown on (001) Silicon (2017) (0)
Vertical GaN trench MOSFETs with step-graded channel doping (2022) (0)
All-silicon and epitaxially grown III-V-on-silicon photodetectors for on-chip optical interconnection applications (2013) (0)
Monolithically Integrated High-resolution Full-color GaN-on-Si Micro-LED Micro-display (2022) (0)
Illinois Nano EP Seminar Series Spring 2010 - Lecture 1: Hetero-epitaxy of III-V Compounds on Silicon Substrates by MOCVD for Device Applications (2011) (0)
Trap Characterization of InGaN/GaN Blue Light Emitting Diode Grown on Si Substrate (2021) (0)
IVA-3 Parasitic corrections for mobility profiling of large-periphery GaAs power FET's (1986) (0)
GaAs micro-disk lasers on membranes grown by lateral MOCVD on SOI platform (2022) (0)
Monolithic Micro-LED Full-Color Micro-Displays (2019) (0)
Homogeneous and heterogeneous integration of GaN-based light emitting diodes and driving transistors (2016) (0)
Off-state Leakage Current Reduction in AlGaN/GaN HEMTs by Combining Surface Treatment and PGA (2015) (0)
Characteristics of 1.3μm Electrically Pumped InAs/AlGaInAs Quantum Dot Lasers on (001) Silicon (2019) (0)
In0.53Ga0.47As MOS-HEMTs on Si Substrates Grown by MOCVD (2010) (0)
III-V Micro- and Nano-Lasers Grown on Silicon Emitting in the Telecom Band (2020) (0)
Hole eigenenergies in GaAsP/AlGaAs single quantum wells with biaxial tensile strain (1989) (0)
Effects of Pre-annealed Nickel Contact Layer on LED Device Performance using Ni/Ag-based p-type Contacts (2013) (0)
Invited Channel Engineering of 3-Nitride HEMTs for Enhanced Device Performance (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005)) (2005) (0)
Compositional inhomogeneity at the epitaxial layer and substrate interface of AlGaAs/GaAs heterostructures (1994) (0)
Homogeneously Integrated GaN Based Micro-LED Arrays with GaN Transistors (2022) (0)
GaN-based Blue LEDs Grown on Si and Transferred to Copper Substrates with Enhanced Output Power (2009) (0)
Lasers on an InP/SOI platform with dislocation-free in-plane InP sub-micron bars and membranes (2021) (0)
AlGaN/GaN HEMTs on Grooved Sapphire Substrate,'6th Int. Conf. on Nitride Semiconductors,(ICNS-6) (2005) (0)
Controlled single-mode emission in quantum dot micro-lasers. (2021) (0)
Voltage-Controlled Light Modulation Enabled by Monolithically Integrated HEMT-LED Device (2016) (0)
InP/InGaAs nano-ridge array on exact (001) silicon substrate emitting at telecommunication wavelengths (2017) (0)
Localized 2D-exciton energy relaxation due to acoustic deformation potential interaction (1992) (0)
1.3 μm Photoluminescence from InAs/GaAs Quantum Dots on CMOS-compatible (001) Silicon by Metal-organic Chemical Vapor Deposition (2015) (0)
1.6 µm continuous-wave lasing from InAs/AlGaInAs quantum dash micro-disk lasers grown on (001) silicon (2020) (0)
Telecom III-V Nano-Lasers with Distributed Bragg Reflectors Grown on (001) Silicon-on-Insulators (2019) (0)
Blue, Green, and Yellow LEDs Grown on Si Substrates (2013) (0)
Insitu Surface Cleaning and Selective Oxidation in OMCVD Systems (1989) (0)
Room-Temperature Electrically Pumped InP-based $1.3\boldsymbol{\mu} \mathbf{m}$ Quantum Dot Laser on on-axis (001) Silicon (2019) (0)
Improved Resistivity of GaN with Partially Mg-Doped Grown on Si(111) Substrates by MOCVD (2012) (0)
GaN MENS by MOCVD Growth of GaN on Patterned Si Substrates and Wet Etching (2006) (0)
GaAs on (001) Si templates for near-infrared InP quantum dot lasers (2022) (0)
Fabrication of Large Area Flip-chip High Voltage LEDs with 2 Micron Gap (2015) (0)
ISLC 2016 1-μ m InAs quantum dot micro-disk lasers directly grown on exact ( 001 ) (2017) (0)
FAR-INFRARED PHOTOCONDUCTIVITY IN HIGH PURITY EPITAXIAL INDIUM-PHOSPHIDE (1981) (0)
Silicon and hybrid silicon photodetectors for photonic integrated circuits (2012) (0)
Optical characteristics of GAN/SI micro-pixel light-emitting diode arrays (2015) (0)
Effect of different SiN x Passivation and Their Strain on the Reliability of GaN-Based HEMT Structures (2004) (0)
III-nitride Based Ultraviolet LED Micro-array Module for Large-scale Display (2009) (0)
InAs Quantum Dots Lasers Directly Grown on Silicon Emitting at Telecom Wavelengths (2018) (0)
Multi-layer InAs/InAlGaAs quantum dots embedded into InP on Si (001) substrate for dislocation filtering (2016) (0)
III-V Lasers and Integrated Components Directly Grown on Silicon: Options for Integration (2019) (0)
A Fully-Integrated Micro-Display System With Hybrid Voltage Regulator (2023) (0)
980nm electrically-pumped continuous lasing of QW lasers grown on Silicon (2023) (0)
Quantum Dot Avalanche Photodetector on Si Substrate (2020) (0)
Current Collapse Reduction in Al2O3/AlGaN/GaN MOSHEMTs on Si with Sub-bandgap Light Illumination (2022) (0)
Metamorphic AlInAs/GaInAs HEMTs on Si Substrates by MOCVD (2008) (0)
LED on Silicon (LEDoS) Microdisplays (2014) (0)
Vertical Schottky barrier diodes based on a bulk $\beta$ -Ga2O3 substrate with high switching performance (2019) (0)
DC and RF characteristics of AlGaN / GaN / InGaN / GaN double-heterojunction (2006) (0)
Mechanism of Wavelength Tuning over 200 nm Range from InP/InGaAs Nano-Lasers Grown on SOI (2019) (0)
Magneto-optical properties of quantum wells under biaxial tensile strain (1992) (0)
Effects of Double-cap Technique on the improvement of InAs / InAlGaAs / InP Quantum Dots Grown by Metal-organic Chemical Vapor Deposition (2015) (0)
GaN quasi-vertical trench MOSFETs grown on Si substrate with ON-current exceeding 1 A (2022) (0)
Temperature dependent optical gain and absorption of InAs quantum dash laser on silicon emitting at 1.55 μm (2021) (0)
Red-emitting InP quantum dot micro-disk lasers epitaxially grown on (001) silicon. (2021) (0)
Improved Performance of AlGaN/GaN HEMTs by O2-plasma and HCl Surface Treatment (2015) (0)
Telecom InGaAs/InP Quantum Well Lasers Laterally Grown on Silicon-on-Insulator (2022) (0)
Hybrid-integrated Monolithic Active-matrix Blue/Red Dual-color Micro-LED micro-display (2022) (0)
InGaAs MOS-HEMTs on Si substrates grown by MOCVD (2011) (0)
Telecom micro-lasers grown on SOI by lateral epitaxy (2022) (0)
Self-generated chaos in a free-running Fabry-Perot quantum dot laser (2020) (0)
III-V Lasers Emitting at 1.3 to 1.5 $\mu \mathrm{m}$ Grown on (001) Silicon by MOCVD (Invited) (2019) (0)
Comparison of MOCVD Grown GaSb on (001) Si substrates using aspect ratio trapping and interfacial misfit growth methods (2018) (0)
High-Performance GaN Vertical Trench MOSFETs Grown on Si Substrate (2022) (0)
III-nitride LEDs on Si Substrates (2010) (0)

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