Kenneth Galloway | Academic Influence

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Kenneth Galloway

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Computer Science

Kenneth Galloway's Degrees

PhD Computer Science Stanford University
Bachelors Computer Science California Institute of Technology

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Why Is Kenneth Galloway Influential?

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According to Wikipedia, Kenneth F. Galloway, Sr. is an American engineer and engineering educator. He is a Distinguished Professor of Engineering, Emeritus, and Dean of the School of Engineering, Emeritus, at Vanderbilt University. He is a Fellow of the Institute of Electrical and Electronics Engineers, the American Association for the Advancement of Science, the American Society for Engineering Education and the American Physical Society.

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Kenneth Galloway's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics (1984) (145)
Space charge limited degradation of bipolar oxides at low electric fields (1998) (127)
Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures (1997) (119)
Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs (1995) (116)
A conceptual model of a single-event gate-rupture in power MOSFETs (1993) (87)
Simulating single-event burnout of n-channel power MOSFET's (1993) (86)
A review of the techniques used for modeling single-event effects in power MOSFETs (1996) (86)
ACCELERATED TESTS FOR SIMULATING LOW DOSE RATE GAIN DEGRADATION OF LATERAL AND SUBSTRATE PNP BIPOLAR JUNCTION TRANSISTORS (1996) (84)
Analytical Model for Single Event Burnout of Power MOSFETs (1987) (83)
SEGR and SEB in n-channel power MOSFETs (1996) (81)
Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression (1995) (76)
Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics (2001) (71)
MOS device degradation due to total dose ionizing radiation in the natural space environment : a review (1990) (70)
Laser- and Heavy Ion-Induced Charge Collection in Bulk FinFETs (2011) (69)
Moderated degradation enhancement of lateral pnp transistors due to measurement bias (1998) (67)
The determination of Si-SiO/sub 2/ interface trap density in irradiated four-terminal VDMOSFETs using charge pumping (1996) (66)
Evaluation of SEGR threshold in power MOSFETs (1994) (66)
Temperature dependence of single-event burnout in n-channel power MOSFETs (for space application) (1992) (60)
Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs (1993) (57)
Total-dose and single-event effects in switching DC/DC power converters (2002) (54)
Single-Event Burnout Mechanisms in SiC Power MOSFETs (2018) (52)
Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation (2002) (51)
Total-dose radiation effects on sol-gel derived PZT thin films (1992) (47)
Ab initio calculations of H/sup +/ energetics in SiO/sub 2/: Implications for transport (1999) (46)
Total-dose and single-event effects in DC/DC converter control circuitry (2003) (45)
Total dose effects in a linear Voltage regulator (2004) (44)
Radiation-enhanced short channel effects due to multi-dimensional influence from charge at trench isolation oxides (1999) (44)
Dose-rate effects on the total-dose threshold-voltage shift of power MOSFETs (1988) (43)
200 MeV proton damage effects on multi-quantum well laser diodes (1997) (43)
Single-event burnout of power bipolar junction transistors (1991) (42)
Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs (1996) (42)
Radiation‐induced mobility degradation in p‐channel double‐diffused metal‐oxide‐semiconductor power transistors at 300 and 77 K (1993) (41)
Gain degradation of lateral and substrate pnp bipolar junction transistors (1996) (41)
Temperature and angular dependence of substrate response in SEGR [power MOSFET] (1994) (40)
Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence (2017) (39)
Defects and nanocrystals generated by Si implantation into a-SiO/sub 2/ (2000) (39)
Prediction of low dose-rate effects in power metal oxide semiconductor field effect transistors based on isochronal annealing measurements (1997) (37)
Effects of radiation‐induced oxide‐trapped charge on inversion‐layer hole mobility at 300 and 77 K (1992) (35)
Annealing Behavior of a Proton Irradiated Al Ga N/GaN High Electron Mobility Transistor Grown by MBE (2000) (35)
A model of radiation effects in nitride–oxide films for power MOSFET applications (2003) (34)
Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices (2018) (33)
Experimental validation of an accelerated method of oxide-trap-level characterization for predicting long term thermal effects in metal oxide semiconductor devices (1997) (32)
The Effect of Ionizing Radiation on the Breakdown Voltage of Power MOSFETS (1983) (28)
Annealing effects on multi-quantum well laser diodes after proton irradiation (1998) (28)
Test Circuit for Measuring Pulse Widths of Single-Event Transients Causing Soft Errors (2008) (27)
Charge-Sheet Model Fitting to Extract Radiation-Induced Oxide and Interface Charge (1985) (27)
Measurement of a cross-section for single-event gate rupture in power MOSFETs (1996) (26)
TCAD-assisted analysis of back-channel leakage in irradiated mesa SOI nMOSFETs (1998) (26)
Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes (2020) (25)
A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs (1996) (25)
Single event burnout in power diodes: Mechanisms and models (2006) (25)
The effects of ionizing radiation on power-MOSFET termination structures (1989) (25)
From Displacement Damage to ELDRS: Fifty Years of Bipolar Transistor Radiation Effects at the NSREC (2013) (25)
Nanodiamond Lateral VFEM Technology for Harsh Environments (2007) (24)
VDMOS Power Transistor Drain-Source Resistance Radiation Dependence (1981) (24)
Simulated space radiation effects on power MOSFETs in switching power supplies (1989) (24)
Experimental determination of the frequency factor of thermal annealing processes in metal–oxide–semiconductor gate-oxide structures (1997) (24)
Radiation-Induced Interface Traps in Power Mosfets (1986) (24)
Ionizing Radiation Effects on Power MOSFETS during High Speed Switching (1982) (23)
Interface and oxide charge effects on DMOS channel mobility (1989) (23)
Comparison of lifetime and threshold current damage factors for multi-quantum-well (MQW) GaAs/GaAlAs laser diodes irradiated at different proton energies (1999) (23)
Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides (2009) (22)
Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs (2019) (22)
Heavy-Ion-Induced Degradation in SiC Schottky Diodes: Incident Angle and Energy Deposition Dependence (2017) (21)
The Effect of Neutrons on the Characteristics of the Insulated Gate Bipolar Transistor (IGBT) (1986) (20)
Exploration of heavy ion irradiation effects on gate oxide reliability in power MOSFETs (1995) (20)
Total Dose Response of Ge MOS Capacitors With HfO $_{2}$ /Dy $_{2}$ O $_{3}$ Gate Stacks (2007) (20)
Effects of ionizing radiation on the noise properties of DMOS power transistors (1991) (19)
Charge Transport Mechanisms in Heavy-Ion Driven Leakage Current in Silicon Carbide Schottky Power Diodes (2016) (19)
Experimental evidence of the temperature and angular dependence in SEGR [power MOSFET] (1996) (19)
Deep level transient spectroscopy studies of epitaxial silicon layers on silicon‐on‐insulator substrates formed by oxygen implantation (1987) (18)
A review of recent results on diamond vacuum lateral field emission device operation in radiation environments (2011) (18)
Displacement Damage in Bipolar Junction Transistors: Beyond Messenger-Spratt (2017) (18)
Application of test method 1019.4 to nonhardened power MOSFETs (1994) (18)
Digital Control for Radiation-Hardened Switching Converters in Space (2010) (17)
Total dose effects on power-MOSFET switching converters (1998) (17)
Failure Estimates for SiC Power MOSFETs in Space Electronics (2018) (17)
Total dose effects in composite nitride-oxide films (2000) (16)
A hydrogen-transport-based interface-trap-generation model for hot-carrier reliability prediction (2001) (16)
Pulsed laser-induced transient currents in bulk and silicon-on-insulator FinFETs (2011) (16)
Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors (2007) (16)
Radiation Dose Due to Electron-Gun Metallization Systems (1976) (16)
Effects of Halo Doping and Si Capping Layer Thickness on Total-Dose Effects in Ge p-MOSFETs (2009) (16)
The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs (1990) (15)
Temperature-Induced Rebound in Power MOSFETs (1987) (15)
Synergetic effects of radiation stress and hot-carrier stress on the current gain of npn bipolar junction transistors (1994) (15)
The surface generation hump in irradiated power MOSFETs (1994) (15)
Comparison of 1/f noise in irradiated power MOSFETs measured in the linear and saturation regions (1992) (15)
Test structures for analyzing proton radiation effects in bipolar technologies (2002) (15)
Estimating low-dose rate irradiation response of MOSFETs (1994) (14)
Implementation of total dose effects in the bipolar junction transistor Gummel-Poon model (1997) (14)
Temperature dependence of single-event burnout in n-channel power MOSFET's (1994) (14)
Prediction of the one-year thermal annealing of irradiated commercial devices based on experimental isochronal curves (2000) (13)
eview of the Techni ues Used ing vent Effects in Power ss (1996) (13)
Dose and dose-rate effects on NPN bipolar junction transistors irradiated at high temperature (2002) (13)
Total Ionizing Dose Effects on Ge pMOSFETs With High-$k$ Gate Stack: On/Off Current Ratio (2009) (13)
BACKWARD ELASTIC $pi$$sup +$p SCATTERING FROM 2.18 TO 5.0 BeV/c. (1969) (13)
SEGR: a unique failure mode for power mosfets in spacecraft (1996) (13)
A Brief Review of Heavy-Ion Radiation Degradation and Failure of Silicon UMOS Power Transistors (2014) (13)
Investigation of possible sources of 1/f noise in irradiated n-channel power MOSFETs (1994) (13)
Effect of Ionizing Radiation on Defects and $1/f$ Noise in Ge pMOSFETs (2011) (13)
Characteristics of the Breakdown Voltage of Power MOSFETs after Total Dose Irradiation (1986) (12)
Total Dose Response of Ge MOS Capacitors With HfO /Dy O Gate Stacks (2007) (12)
Experimental procedure to predict the competition between the degradation induced by irradiation and thermal annealing of oxide trapped charge in MOSFETs (2000) (12)
Electron-Beam-Induced Currents in Simple Device Structures (1976) (11)
VLSI Processing, Radiation, and Hardening (1978) (11)
Diamond Vacuum Electronic Device Behavior After High Neutron Fluence Exposure (2009) (11)
Dose-rate and irradiation temperature dependence of BJT SPICE model rad-parameters (1997) (11)
Effects of Processing and Radiation Bias on Leakage Currents in Ge pMOSFETs (2010) (11)
The effects of ionizing radiation on commercial power MOSFETs operated at cryogenic temperatures (1994) (10)
Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration (2017) (10)
THE EFFECTS OF SPACE RADIATION EXPOSURE ON POWER MOSFETS: A REVIEW (2004) (10)
Reliability degradation of ultra-thin oxynitride and Al/sub 2/O/sub 3/ gate dielectric films owing to heavy-ion irradiation (2002) (10)
Test Circuit Structures For Characterizing The Effects Of Localized Hot-carrier-induced Charge In VLSI Switching Circuits (1988) (10)
A generalized model for the lifetime of microelectronic components, applied to storage conditions (2001) (9)
Use of a scanning electron microscope for screening bipolar surface effects (1974) (9)
Defects and Nanocrystals Generated by Si Implantation into aSiO 2 (2001) (9)
Evaluation of MOS devices' total dose response using the isochronal annealing method (2001) (8)
Important Considerations for SEM Total Dose Testing (1977) (8)
Effect of neutron irradiation on the breakdown voltage of power MOSFET's (1994) (8)
Determining the drain doping in DMOS transistors using the hump in the leakage current (1994) (8)
Relaxation of Si-SiO/sub 2/ interfacial stress in bipolar screen oxides due to ionizing radiation (1995) (8)
Hydrogen Soaking, Displacement Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors (2018) (8)
Enhanced Charge Collection in SiC Power MOSFETs Demonstrated by Pulse-Laser Two-Photon Absorption SEE Experiments (2019) (8)
Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs (2019) (8)
Radiation Damage to Integrated Injection Logic Cells (1975) (8)
Gamma radiation effects on integrated injection logic cells (1975) (8)
Total Dose Effects on Circuit Speed Measurements (1983) (7)
Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs (2021) (7)
Evidence for border traps in metal‐oxide‐semiconductor transistors through 1/f noise (1995) (7)
Mesonic structure in the nucleon (1971) (7)
Radiation Levels Associated with Advanced Lithographic Techniques (1979) (7)
Measurement of the interlayer between aluminum and silicon dioxide using ellipsometric, capacitance-voltage and auger electron spectroscopy techniques (1981) (7)
Unifying Concepts for Ion-Induced Leakage Current Degradation in Silicon Carbide Schottky Power Diodes (2020) (7)
Inclusion of Radiation Environment Variability for Reliability Estimates for SiC Power MOSFETs (2020) (6)
Analysis of the time-dependent turn-on mechanism for single-event burnout of n-channel power MOSFETs (1993) (6)
Comparison of charge pumping and 1/ƒ noise in irradiated Ge pMOSFETs (2011) (6)
Circuit-level model for single-event burnout in N-channel power MOSFET's (1999) (6)
1/f noise and interface trap density in high field stressed pMOS transistors (1993) (6)
An I-V measurement method and its application for characterizing ferroelectric PZT thin films (1994) (6)
Gate-charge measurements for irradiated n-channel DMOS power transistors (1991) (6)
Predicting worst-case charge buildup in power-device field oxides (1991) (6)
Effects of scaling thickness and niobium doping level on ferroelectric thin film capacitor memory operation (1995) (5)
Total Ionizing Dose Effects on Ge Channel $p$FETs with Raised ${\rm Si}_{0.55}{\rm Ge}_{0.45}$ Source/Drain (2015) (5)
Observation of the reaction π - p --> at 6 GeV / c (1968) (5)
IEEE Nuclear and Space Radiation Effects Conference: Notes on the Early Conferences (2013) (5)
Total-dose radiation hardness of double-gate ultra-thin SOI MOSFETs (2003) (5)
Search for backwards-produced exotic meson resonances in 8.4 GeV/c π+p interactions (1974) (5)
Comparison of Charge Pumping and $1/f$ Noise in Irradiated Ge pMOSFETs (2012) (5)
On the compatibility of X-ray lithography and SOS device fabrication (1978) (5)
TID-Induced OFF-State Leakage Current in Partially Radiation-Hardened SOI LDMOS (2020) (5)
Effect of Drift Length on Shifts in 400-V SOI LDMOS Breakdown Voltage Due to TID (2020) (5)
Observation of single event burnout (SEB) in an SOI NLDMOSFET using a pulsed laser (2021) (5)
Temperature Stress Response of Germanium MOS Vapacitors with HfO2/HfSiON Gate Dielectric (2009) (4)
Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors (2002) (4)
Degradation of bipolar transistor electrical parameters during sem evaluation (1974) (4)
Comparison between the effects of positive noncatastrophic HBM ESD stress in n-channel and p-channel power MOSFETs (1991) (4)
Characterization and CMRR Modeling of a Carbon-Nanotube Field-Emission Differential Amplifier (2009) (4)
The Effect of Postoxidation Anneal on the Electrical Characteristics of Thin Oxides (1987) (4)
Experimental evidence of the temperature and angular dependence in SEGR [power MOSFETs] (1995) (4)
Dips in one-pion production processes from a statistical point of view (1971) (3)
Analysis of current-mirror MOSFETs for use in total-dose radiation environments (1989) (3)
Reliability challenges for low voltage/low power integrated circuits (1996) (3)
Update on High-Impact Papers Presented at the IEEE Nuclear and Space Radiation Effects Conference: The View in 2013 (2003) (3)
Model for high-temperature radiation effects in n-p-n bipolar-junction transistors (2002) (3)
Interaction of Radiation with Semiconductor Devices (2012) (3)
Single-Event Gate Rupture Hardened Structure for High-Voltage Super-Junction Power MOSFETs (2021) (3)
Catastrophic failure of silicon power MOS in space (2012) (3)
Incident angle effect on heavy ion induced reverse leakage current in SiC Schottky diodes (2016) (3)
Backwardπ+pElastic Scattering from 2.18 to5.25 GeVc (1971) (3)
New Insight into Single-Event Radiation Failure Mechanisms in Silicon Carbide Power Schottky Diodes and MOSFETs (2020) (3)
Detection of ESD-induced noncatastrophic damage in p-channel power MOSFETs (1992) (3)
Analysis of SEGR in Silicon Planar Gate Super-Junction Power MOSFETs (2021) (3)
The K−n → K−π−p reaction at 2.24 GeV/c (1968) (3)
Molecular Dynamics Simulations of Heavy Ion Induced Defects in SiC Schottky Diodes (2018) (3)
Accelerated tests for bounding the low dose rate radiation response of lateral PNP bipolar junction transistors (1996) (3)
Ionic clustering as a possible source of error in determining MOS C-V characteristics (1974) (3)
Combination field plate/field ring termination structures for integrated power devices (1993) (3)
TWO-PRONG + K$sub 1$$sup 0$ EVENTS IN K$sup -$d INTERACTIONS AT 2.24 GeV/c. (1967) (3)
Design issues for a radiation-tolerant digital-to-analog converter in a commercial 2.0-/spl mu/m BiCMOS process (1997) (3)
Visualization of ionizing-radiation and hot-carrier stress response of polysilicon emitter BJTs (1994) (2)
Comparison of microelectronic test structures for propagation delay measurements (1985) (2)
Fatigue effect on the I-V characteristics of sol-gel derived PZT thin films (1992) (2)
TID-Induced Breakdown Voltage Degradation in Uniform and Linear Variable Doping SOI p-LDMOSFETs (2020) (2)
ASSOCIATED RESONANCE PRODUCTION IN $pi$$sup -$p INTERACTIONS AT 6 GeV/c. (1968) (2)
Interface Trap Effects on the Hot-Carrier Induced Degradation of MOSFETs during Dynamic Stress (1987) (2)
Annealing of ESD-induced damage in power MOSFETs (1993) (2)
Effect of Zr/Ti stoichiometry ratio on the ferroelectric properties of sol-gel derived PZT films (1992) (2)
Dose and dose rate effects on NPN bipolar junction transistors irradiated at high temperature (2001) (2)
Some Aspects of Using a Scanning Electron Microscope for Total Dose Testing. (1977) (2)
SYNERGETIC EFFECTS OF RADIATION STRESS AND BIPOLAR JUNCTION TRANSISTORS HOT-CARRIER STRESS ON THE CURRENT GAIN OF NPN (1994) (2)
Radiation Damage Estimates and Control in Ion‐Beam Lithography (1980) (2)
Radiation dose at the silicon‐sapphire interface due to electron‐beam aluminization (1978) (2)
oderated Degradation Enhancement of Lateral np Transistors Due to Measurement (1998) (1)
SIX-PRONGED $pi$$sup -$p INTERACTIONS AT 6 BeV/c. (1970) (1)
The Application of Test Structures and Test Patterns to the Development of Radiation Hardened Integrated Circuits: A Review. (1976) (1)
A method for predicting breakdown voltage of power devices with cylindrical diffused junctions (1995) (1)
Simple model for the slope change of C‐V curves of irradiated MOS capacitors (1974) (1)
SIMULATED SPACE RADIATION EFFECTS SWITCHING POWER SUPPLIES' ON POWER MOSFETS IN (1989) (1)
A MEMS dosimeter comprising diamond for very high neutron fluence (2009) (1)
SINGLE EVENT EFFECTS IN THE NANO ERA (2008) (1)
Gamma-radiation-induced inversion-layer hole mobility degradation in p-channel power MOSFETs at 300 K and 77 K (1991) (1)
A study of particle spectra and mass distributions in the reaction π+ + p → n (forward) + (2π, 4π, 6π) at 8.4 GeV/c (1975) (1)
Reliability Concerns for Flying SiC Power MOSFETs in Space (2018) (1)
The effects of localized hot-carrier-induced charge in VLSI switching circuits (1990) (1)
ESD effects in power MOSFETs: a review (1993) (1)
Total ionizing dose effect on depletion mode Ge pMOSFETs with high-k gate stack: on-off current ratio (2008) (1)
Analysis of Heavy-Ion-Induced Leakage Current in SiC Power Devices (2022) (1)
Comparison of Simple Approximations and Numerical Solutions for the Threshold Voltage of Ion-Implanted Long-Channel MOSFET's (1984) (1)
π - p Backward Elastic Scattering from 2.38 to 3.00 GeV/c (1970) (1)
Evaluation of temperature-enhanced gain degradation of verticle npn and lateral pnp bipolar transistors (1997) (1)
Comment on low-energy electron-beam energy deposition (1975) (1)
π - p-->π - π + π - p Reaction at 6 GeV/c (1970) (1)
Simulation of hot-carrier degradation using self-consistent solution of semiconductor energy-balance equations and oxide carrier transport equations (1999) (0)
RADIATION DAMAGETO INTEGRATED INJECTION LOGICCELLS (1975) (0)
The winner of the best RADECS 2008 Oral Presentation Award was: "Diamond Electronic Device Behavior After (2008) (0)
Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes (2023) (0)
Parasitic Bipolar Action in SiC Power MOSFETs Demonstrated by Two-Photon Laser Experiment (2018) (0)
High-voltage termination-structure design using a test chip and two-dimensional simulation (1993) (0)
Temperature Stress Response of Germanium MOS with HfSiON Dielectric (2009) (0)
A survey of device reliability concerns for LV/LP IC technologies (1997) (0)
Effect of ionising radiation on mobile-ion density in m.o.s. oxides (1979) (0)
Double-Regge-Pole model analysis of π−p → π−π−Δ++ at 6 GeV/c (1970) (0)
Test structures for analyzing radiation effects in bipolar technologies (2002) (0)
Influence of Radiation Environment Variability on Cumulative Heavy-Ion-Induced Leakage Current in SiC Power Devices (2023) (0)
Laser-induced current transients in bulk FinFETs (2011) (0)
Research on Radiation Effects in Support of the Defense Nuclear Agency (1993) (0)
Study of particle spectra and correlations in the reaction $pi$$sup +$ + p $Yields$ n(forward) + (2$pi$,4$pi$,6$pi$) at 8.4 GeV/c (1974) (0)
ICAM (Integrated Computer-Aided Manufacturing) Integrated Planning System (IPS). Volume 4. Product Specification Release Production Requirements. (1984) (0)
Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes (2023) (0)
Total Dose Response of Ge MOS Capacitors With HfO<formula formulatype="inline"><tex>$_{2}$</tex></formula>/Dy<formula formulatype="inline"> <tex>$_{2}$</tex></formula>O<formula formulatype="inline"><tex>$_{3}$</tex> </formula> Gate Stacks (2007) (0)
(Invited) Radiation Hardness of SiGe and Ge-Based CMOS Technologies (2011) (0)
ICAM (Integrated Computer-Aided Manufacturing) Integrated Planning System (IPS). Volume 2. Product Specification Factory Loading. (1984) (0)
Measurement bias dependence of enhanced bipolar gain degradation at low dose rates (1998) (0)
Space-Radiation Effects in Advanced SOI Devices and Alternative Gate Dielectrics (2003) (0)
Radiation induced changes in power MOSFET gate-charge measurements (1990) (0)
RADIATION-INDUCED INTERFACE TRAPS IN POWER MOSFETSt (2007) (0)
in Simple Device Structures (1976) (0)
The impact of mechanical stress on the total-dose response of linear bipolar transistors with various passivation layers (2005) (0)
THE K$sup -$n $Yields$ K$sup -$$pi$$sup -$p REACTION AT 2.24 GeV/c. (1968) (0)
Pion-Neutron Interactions at 3.5 Bev/c. (1966) (0)
COMPARISON OF ON- AND OFF-MASS-SHELL $pi$$sup -$p ELASTIC AND INELASTIC SCATTERING. (1972) (0)
(Invited) Interface and Border Traps in Ge pMOSFETs (2013) (0)
Possible evidence for the Npp decay mode of the ? (1920) and the ? (2420) nucleon isobars (1968) (0)
$pi$$sup -$p $Yields$ $pi$$sup -$$pi$$sup +$$pi$$sup -$p REACTION AT 6 GeV/ c. (1970) (0)
The Sensitive Region of Displacement Damage in LPNP Induced by Various Charged Particles (2019) (0)
Radiation damage studies of strain-engineered and high-mobility deep submicrometer MOSFETs (2008) (0)
Ab Initio Calculations of H' Energetics in SO,: Implications for Transport1 (1999) (0)
OBSERVATION OF THE REACTION $pi$$sup -$p $Yields$ N*$sup +$$pi$$sup -$ AT 6 GeV/c. (1968) (0)
lrradiation on Effect of Neutron Breakdown Voltage of Power MOSFET's (1994) (0)
Interface and border traps in Ge pMOSFETs (2012) (0)
TCAD-based simulation of hot-carrier degradation in p-channel mosfets using silicon energy-balance and oxide carrier-transport equations (1996) (0)
ICAM (Integrated Computer-Aided Manufacturing) Integrated Planning System (IPS). Volume 3. Product Specification Record and Provide Production Information. (1984) (0)
Investigation of Radiation Effects in Microelectronics. (1996) (0)
USE OF THE FIALHO METHOD FOR CALCULATING PHASE-SPACE VOLUMES (1966) (0)
A study of particle spectra and mass distributions in the reaction $pi$$sup +$ + p $Yields$ n(forward) + (2$pi$, 4$pi$, 6$pi$) at 8.4 GeV/c (1975) (0)
Development of Carbon Nanotubes Vacuum Field Emission Devices (2007) (0)
Comparison of termination methods for low-voltage, vertical integrated power devices (1994) (0)
THE EFFEnS OF IONIZING RADIATION ON THE BREAKDOWN VOLTAGE OF P-CHANNEL POWER MOSFETSt (1990) (0)
A comparison of approximation schemes for calculating phase-space factors in the 1 to 10 GeV range (1966) (0)
PEPR MEASUREMENTS OF ARGONNE 12' HBC FILM. (1971) (0)
Radiation-hardened power devices (1987) (0)
(T/E) SEARCH FOR BACKWARDS-PRODUCED EXOTIC MESON RESONANCES IN 8.4 GeV/c fi+p INTERACTIONS* (1974) (0)
Concept and initial feasibility of contamination TCAD by integration with commercial software (1999) (0)
IMPORTANT CONSIDERATIONS FORSEMTOTALDOSETESTING (1977) (0)

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