Kirsten Moselund
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Most Influential Person Now
Danish engineer and Professor of Electronics and Microtechnology
Kirsten Moselund's AcademicInfluence.com Rankings
Kirsten Moselundengineering Degrees
Engineering
#4903
World Rank
#6128
Historical Rank
Applied Physics
#3469
World Rank
#3570
Historical Rank
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Engineering
Kirsten Moselund's Degrees
- PhD Electronics and Microtechnology Technical University of Denmark
- Masters Electrical Engineering Technical University of Denmark
- Bachelors Electrical Engineering Technical University of Denmark
Why Is Kirsten Moselund Influential?
(Suggest an Edit or Addition)According to Wikipedia, Kirsten E. Moselund is a Danish engineer who is a professor of electronics and microtechnology at École Polytechnique Fédérale de Lausanne. She also leads the Laboratory for Nano and Quantum Technologies at Paul Scherrer Institute. She previously worked as Head of the Materials Integration and Nanoscale Devices group at IBM Research.
Kirsten Moselund's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si (2015) (175)
- Vertical III-V nanowire device integration on Si(100). (2014) (143)
- InAs–Si Nanowire Heterojunction Tunnel FETs (2012) (125)
- Si-InAs heterojunction Esaki tunnel diodes with high current densities (2010) (101)
- High-speed III-V nanowire photodetector monolithically integrated on Si (2020) (77)
- Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon (2008) (69)
- Lateral InAs/Si p-Type Tunnel FETs Integrated on Si—Part 2: Simulation Study of the Impact of Interface Traps (2016) (64)
- InAs-Si heterojunction nanowire tunnel diodes and tunnel FETs (2012) (57)
- Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High- $k$ Gate Dielectric (2011) (55)
- High-Mobility GaSb Nanostructures Cointegrated with InAs on Si. (2017) (52)
- Room-Temperature Lasing from Monolithically Integrated GaAs Microdisks on Silicon (2017) (49)
- Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si (2015) (48)
- Comparison of VLS grown Si NW tunnel FETs with different gate stacks (2009) (44)
- Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior? (2013) (43)
- Vertical InAs-Si Gate-All-Around Tunnel FETs Integrated on Si Using Selective Epitaxy in Nanotube Templates (2015) (43)
- Complementary III–V heterojunction lateral NW Tunnel FET technology on Si (2016) (42)
- The High-Mobility Bended n-Channel Silicon Nanowire Transistor (2010) (42)
- Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects. (2017) (41)
- III–V heterostructure tunnel field-effect transistor (2018) (40)
- Lateral InAs/Si p-Type Tunnel FETs Integrated on Si—Part 1: Experimental Devices (2016) (38)
- Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress (2007) (36)
- A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon (2021) (30)
- Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy (2017) (29)
- In situ doping of catalyst-free InAs nanowires (2012) (29)
- Fabrication of vertical InAs-Si heterojunction tunnel field effect transistors (2011) (26)
- Scaled resistively-coupled VO2 oscillators for neuromorphic computing (2020) (24)
- Concurrent Zinc-Blende and Wurtzite Film Formation by Selection of Confined Growth Planes (2018) (23)
- InGaAs FinFETs Directly Integrated on Silicon by Selective Growth in Oxide Cavities (2018) (23)
- Impact of trap-assisted tunneling and channel quantization on InAs/Si hetero Tunnel FETs (2016) (22)
- InP-on-Si Optically Pumped Microdisk Lasers via Monolithic Growth and Wafer Bonding (2019) (22)
- Fault-tolerant multi-level logic decoder for nanoscale crossbar memory arrays (2007) (20)
- Interface State Density of Single Vertical Nanowire MOS Capacitors (2013) (20)
- Solid-state diffusion as an efficient doping method for silicon nanowires and nanowire field effect transistors (2010) (20)
- Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy (2018) (19)
- Time-Delay Encoded Image Recognition in a Network of Resistively Coupled VO₂ on Si Oscillators (2020) (18)
- Dopant-Induced Modifications of Ga xIn(1- x)P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111). (2018) (18)
- Resistive Coupled VO2 Oscillators for Image Recognition (2018) (18)
- Monolithic integration of multiple III-V semiconductors on Si for MOSFETs and TFETs (2016) (17)
- Prospects for logic-on-a-wire (2008) (16)
- Exploring the Size Limitations of Wurtzite III-V Film Growth. (2019) (16)
- Microcavity Lasers on Silicon by Template-Assisted Selective Epitaxy of Microsubstrates (2019) (14)
- Hybrid III-V Silicon Photonic Crystal Cavity Emitting at Telecom Wavelengths. (2020) (13)
- Coupled VO2 Oscillators Circuit as Analog First Layer Filter in Convolutional Neural Networks (2020) (12)
- High-Frequency Quantum Well InGaAs-on-Si MOSFETs With Scaled Gate Lengths (2019) (12)
- VLS-grown silicon nanowire tunnel FET (2009) (12)
- Waveguide coupled III-V photodiodes monolithically integrated on Si (2021) (12)
- Small Slope Micro/Nano-Electronic Switches (2007) (11)
- Corner Effect and Local Volume Inversion in SiNW FETs (2011) (11)
- High-performance InGaAs FinFETs with raised source/drain extensions (2019) (11)
- (Invited) Comparative Simulation Study of InAs/Si and All-III-V Hetero Tunnel FETs (2015) (10)
- Variability-Aware Design of Multilevel Logic Decoders for Nanoscale Crossbar Memories (2008) (10)
- III–V-based hetero tunnel FETs: A simulation study with focus on non-ideality effects (2016) (10)
- Wurtzite InP microdisks: from epitaxy to room-temperature lasing (2020) (9)
- Heterogeneous Integration of III–V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics (2021) (9)
- Cointegration of Gate-All-Around MOSFETs and Local Silicon-on-Insulator Optical Waveguides on Bulk Silicon (2007) (9)
- Monolithic integration of InAlAs/InGaAs quantum-well on InP-OI micro-substrates on Si for infrared light sources (2017) (8)
- Experimental study of the process dependence of Mo, Cr, Ti, and W silicon Schottky diodes and contact resistance (2006) (8)
- Monolithically integrated InGaAs microdisk lasers on silicon using template-assisted selective epitaxy (2018) (8)
- Scaling of metal-clad InP nanodisk lasers: optical performance and thermal effects. (2020) (7)
- The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si tunnel FETs (2017) (7)
- Fabrication and analysis of vertical p-type InAs-Si nanowire Tunnel FETs (2015) (7)
- Nanoscale strain characterisation for ultimate CMOS and beyond (2008) (7)
- Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100) (2019) (6)
- Compact gate-all-around silicon light modulator for ultra high speed operation (2005) (6)
- Ultra-Thin III-V Photodetectors Epitaxially Integrated on Si with Bandwidth Exceeding 25 GHz (2020) (6)
- Complementary III–V heterostructure tunnel FETs (2016) (6)
- C-V measurements of single vertical nanowire capacitors (2011) (6)
- In-plane monolithic integration of scaled III-V photonic devices (2020) (5)
- The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs (2017) (5)
- (Invited) Complementary III-V Heterojunction Tunnel FETs Monolithically Integrated on Silicon (2018) (5)
- Abrupt current switching due to impact ionization effects in Ω-MOSFET on low doped bulk silicon (2007) (5)
- Three-dimensional electronic devices fabricated on a top-down silicon nanowire platform (2008) (4)
- Modeling whispering gallery mode III–V micro-lasers monolithically integrated on Silicon (2018) (4)
- Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch (2008) (4)
- Monolithic Integration of III -V on silicon for photonic and electronic applications (2018) (4)
- Transition to the quantum hall regime in InAs nanowire cross-junctions (2019) (4)
- Low temperature single electron characteristics in gate-all-around MOSFETs (2006) (3)
- Ballistic transport and high thermopower in one-dimensional InAs nanowires (2016) (3)
- Butt-Coupled III-V Photodetector Monolithically Integrated on SOI with data reception at 50 Gbps OOK (2021) (3)
- Coulomb blockade in gate-all-around silicon nanowire MOSFETs (2006) (3)
- Investigation of InAs/GaSb tunnel diodes on SOI (2017) (3)
- Materials and Devices for Nanoelectronic Systems Beyond Ultimately Scaled CMOS (2009) (3)
- III-V-on-Si transistor technologies: Performance boosters and integration (2021) (3)
- Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs (2016) (3)
- Single-mode emission from a topological lattice with distributed gain and dielectric medium (2022) (2)
- Beyond CMOS : Challenges and opportunities major trends in microelectronics for the coming decades (2007) (2)
- Direct Electrodeposition of InSb Devices on Silicon (2021) (2)
- Monolithically integrated III-V gain material on virtual substrates on Si using template-assisted selective epitaxy (2017) (2)
- Monolithic integration of III-V microdisk lasers on silicon (2019) (2)
- Monolithic integration of multiple III-V semiconductors on Si (2017) (2)
- Electrodeposition as an Alternative Approach for Monolithic Integration of InSb on Silicon (2022) (2)
- Monolithic integration of III-V nanostructures for electronic and photonic applications (2017) (2)
- VLS-grown silicon nanowires — Dopant deactivation and tunnel FETs (2010) (2)
- Selective Area Growth by Hydride Vapor Phase Epitaxy and Optical Properties of InAs Nanowire Arrays (2021) (2)
- VO2 oscillators coupling for Neuromorphic Computation (2019) (2)
- Emerging nanoelectronics: multi-functional nanowires (2004) (2)
- Thermal Simulation and Experimental Analysis of Optically Pumped InP-on-Si Micro- and Nanocavity Lasers (2021) (2)
- Prospects for logic-ona-wire (2009) (1)
- Co-integration of gate-all-around MOSFETs and local silicon-on insulator optical waveguides on bulk silicon for GHz on-chip optical signaling (2006) (1)
- Abrupt NMOS Inverter Based on Punch-Through Impact Ionization With Hysteresis in the Voltage Transfer Characteristics (2008) (1)
- Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing (2019) (1)
- Microcavity III-V lasers monolithically grown on silicon (2018) (1)
- Single-Mode Emission in InP Microdisks on Si Using Au Antenna (2021) (1)
- Scaled III-V optoelectronic devices on silicon (2020) (1)
- NANOSIL network of excellence-silicon-based nanostructures and nanodevices for long-term nanoelectronics applications (2008) (1)
- Modelling of thermal effects in InP-on-Si nanocavity lasers (2021) (1)
- Replacement Metal Gate InGaAs-OI FinFETs by Selective Epitaxy in Oxide Cavities (2019) (1)
- Complementary III-V heterostructure Tunnel FETs (invited) (2016) (1)
- InGaAs microdisk cavities monolithically integrated on Si with room temperature emission at 1530 nm (2021) (1)
- III-V semiconductor nanowires for future devices (2014) (1)
- Fast and efficient light intensity modulation in SOI with gate-all-around transistor phase modulator (2005) (1)
- Integration of III–V heterostructure tunnel FETs on Si using Template Assisted Selective Epitaxy (TASE) (2016) (1)
- Topological lasing from embedded III-V 1D photonic crystal lattices in the telecom O-band (2021) (1)
- How non-ideality effects deteriorate the performance of tunnel FETs (2017) (1)
- III-V heterojunction nanowire tunnel FETs monolithically integrated on silicon (2016) (1)
- DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch (2008) (1)
- Evaluation of material profiles for III-V nanowire photodetectors (2021) (0)
- Monolithic III-V microdisk lasers on silicon by template-assisted selective epitaxy (2020) (0)
- Robustness of the topological interface state in a 1D photonic crystal resonator with an air-gap (2021) (0)
- Crystal Phase Tuning in Planar Films of III-V Semiconductors (2019) (0)
- High-Performance InGaAs-on-Silicon Technology Platform For Logic and RF Applications (2019) (0)
- The Impact of Heterojunction and Oxide-interface Traps on the Performance of InAs / Si and InAs / GaAsSb Nanowire Tunnel FETs ( invited ) (2017) (0)
- Alternative transistor concepts (2011) (0)
- Emerging nanoelectronics: multi-functional nanowire (2004) (0)
- Monolithic Integration of III-V on Si Applied to Lasing Micro-Cavities: Insights from STEM and EDX (2018) (0)
- Gate-all-around MOSFETs: true fabrication and characteristics (2006) (0)
- Two-Dimensional Oscillatory Neural Networks for Energy Efficient Neuromorphic Computing (2020) (0)
- III-V Vertical Nanowires Grown on Si by Template-assisted Selective Epitaxy for Tandem Solar Cells (2019) (0)
- Single-mode emission from a monolithically integrated III-V/Si topological lattice (2022) (0)
- Semiconductor nanowire manufacturing (2014) (0)
- Investigation of Strain Profile Optimization in Gate-All-Around Suspended Silicon Nanowire FET (2008) (0)
- Metal-Clad InP Cavities for Nanolasers on Si (2020) (0)
- Self-heating analysis of monolithically integrated hybrid III-V/Si PIN diode (2022) (0)
- Quantitative Analysis on Temperature-dependent Raman Scattering of InP-OI Films and InP Nanostructures (2022) (0)
- Template-assisted selective epitaxy for III-V vertical nanowires on Si tandem solar cells (2019) (0)
- Novel Integration Approach for III-V Microdisk Cavities on Si (2019) (0)
- (Invited) Template-Assisted Selective Epitaxy (TASE) of III-V Nanoscale Devices for Heterogeneous Integration with Si (2015) (0)
- A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon (2021) (0)
- Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy (2023) (0)
- Review: III–V infrared emitters on Si: fabrication concepts, device architectures and down-scaling with a focus on template-assisted selective epitaxy (2022) (0)
- Embedded InP-on-Si 1D photonic crystal emitting in the topological mode (2021) (0)
- Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits (2008) (0)
- Tunnel field-effect transistor, method of making and using (2012) (0)
- Thermal and optical simulation of InP on Si nanocavity lasers (2021) (0)
- III–V device integration on Si using template-assisted selective epitaxy (2015) (0)
- Process dependence and characterization of Mo, Cr, Ti and W silicon Schottky diodes (2005) (0)
- Novel Integration Approach for III-V Microdisk Cavities on Si (2019) (0)
- Monolithically Integrated InP-on-Si Microdisk Lasers with Room-Temperature Operation (2019) (0)
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What Schools Are Affiliated With Kirsten Moselund?
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