Klaus H. Ploog
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Semiconductor physicist and director of the Paul Drude Institute for Solid State Microelectronics
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Physics
Klaus H. Ploog's Degrees
- PhD Physics University of Göttingen
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(Suggest an Edit or Addition)Klaus H. Ploog's Published Works
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Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes (2000) (1558)
- Room-temperature spin injection from Fe into GaAs. (2001) (611)
- THERMAL-CONDUCTIVITY MEASUREMENTS OF GAAS/ALAS SUPERLATTICES USING A PICOSECOND OPTICAL PUMP-AND-PROBE TECHNIQUE (1999) (397)
- Programmable computing with a single magnetoresistive element (2003) (351)
- Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy (2000) (340)
- Magnetoresistance oscillations in a two-dimensional electron gas induced by a submicrometer periodic potential (1989) (320)
- Colossal magnetic moment of Gd in GaN. (2005) (312)
- Alloy broadening in photoluminescence spectra ofAlxGa1−xAs (1984) (305)
- Molecular beam epitaxy and heterostructures (1985) (284)
- Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal (2001) (250)
- Compositional and doping superlattices in III-V semiconductors (1983) (232)
- Electronic band structure of wurtzite GaN under biaxial strain in the M plane investigated with photoreflectance spectroscopy (2002) (216)
- The effect of As2 and As4 molecular beam species on photoluminescence of molecular beam epitaxially grown GaAs (1980) (198)
- Electrical properties and photoluminescence of Te‐doped GaAs grown by molecular beam epitaxy (1982) (189)
- Direct measurement of local lattice distortions in strained layer structures by HREM (1993) (185)
- Temperature dependence of photoluminescence from GaAs single and multiple quantum‐well heterostructures grown by molecular‐beam epitaxy (1988) (175)
- Recombination Enhancement due to Carrier Localization in Quantum Well Structures (1983) (174)
- The delta-doped field-effect transistor (δFET) (1986) (174)
- Magneto-optical determination of exciton binding-energy in GaAs-Ga1-xAlx as quantum wells (1984) (173)
- Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAs (1978) (172)
- On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy (2008) (171)
- Electrical spin injection from ferromagnetic MnAs metal layers into GaAs (2002) (170)
- Two-dimensional magneto-quantum transport on GaAs-AlxGa1-xAs heterostructures under non-ohmic conditions (1983) (170)
- X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films (2004) (168)
- Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H–SiC(0001) by reactive molecular-beam epitaxy (2003) (163)
- In‐plane‐gated quantum wire transistor fabricated with directly written focused ion beams (1990) (160)
- Current-induced spin polarization at a single heterojunction (2004) (156)
- Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy (2006) (153)
- Delta- (°-) doping in MBE-grown GaAs: Concept and device application (1987) (146)
- Shallow and deep donors in direct-gap n -type Al x Ga 1 − x A s : S i grown by molecular-beam epitaxy (1984) (139)
- Impact of nucleation conditions on the structural and optical properties of M-plane GaN(11̄00) grown on γ-LiAlO2 (2002) (134)
- Gd-doped GaN: A very dilute ferromagnetic semiconductor with a Curie temperature above 300 K (2004) (129)
- Quantum degenerate exciton-polaritons in thermal equilibrium. (2006) (129)
- Observation of Tunable Band Gap and Two-Dimensional Subbands in a Novel GaAs Superlattice (1981) (128)
- Epitaxial growth of Fe3Si/GaAs(001) hybrid structures (2003) (127)
- Correlation of structure and magnetism in GaAs with embedded Mn(Ga)As magnetic nanoclusters (2002) (127)
- Phase-resolved nonlinear response of a two-dimensional electron gas under femtosecond intersubband excitation. (2004) (126)
- Quantum confinement in monatomic Cu chains on Cu(111). (2004) (125)
- Coherent spin transport through dynamic quantum dots (2005) (118)
- Fundamental studies and device application of δ-doping in GaAs Layers and in AlxGa1−xAs/GaAs heterostructures (1988) (117)
- Nonlinear terahertz response of n-Type GaAs (2006) (117)
- Spatial coherence of a polariton condensate. (2007) (117)
- Frequency and density dependent radiative recombination processes in III–V semiconductor quantum wells and superlattices (1991) (117)
- High p‐type conductivity in cubic GaN/GaAs(113)A by using Be as the acceptor and O as the codopant (1996) (114)
- The Use of Si and Be Impurities for Novel Periodic Doping Structures in GaAs Grown by Molecular Beam Epitaxy (1981) (112)
- Characterization of GaN quantum discs embedded in Al x Ga 1 − x N nanocolumns grown by molecular beam epitaxy (2003) (110)
- Optical and structural properties of GaAs grown on (100) Si by molecular‐beam epitaxy (1988) (110)
- Ferromagnetism and colossal magnetic moment in Gd-focused ion-beam-implanted GaN (2006) (108)
- Inelastic Light Scattering from a Quasi-Two-Dimensional Electron System in GaAs-Al x Ga 1-x As Heterojunctions (1979) (107)
- Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy (1995) (105)
- Proposal of novel electron wave coupled devices (1990) (103)
- Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001) (1999) (103)
- The δ-Doped Field-Effect Transistor (1985) (103)
- Electrically tunable GHz oscillations in doped GaAs-AlAs superlattices (1997) (101)
- Subband physics for a “realistic” δ-doping layer (1988) (98)
- Real-Space Transfer and Trapping of Carriers into Single GaAs Quantum Wires Studied by Near-Field Optical Spectroscopy (1997) (98)
- Strain-mediated phase coexistence in MnAs heteroepitaxial films on GaAs: An x-ray diffraction study (2002) (98)
- Low-dispersion thin-film microstrip lines with cyclotene (benzocyclobutene) as dielectric medium (1997) (97)
- Observation of spin-glass behavior in homogeneous (Ga, Mn)N layers grown by reactive molecular-beam epitaxy (2003) (96)
- Thermal conductivity of GaAs/AlAs superlattices (1999) (92)
- Characterization of low temperature GaAs antenna array terahertz emitters (2007) (88)
- Uniform quantum-dot arrays formed by natural self-faceting on patterned substrates (1998) (88)
- Spin injection from Fe3Si into GaAs (2004) (88)
- Periodic elastic domains of coexisting phases in epitaxial MnAs films on GaAs (2002) (88)
- Saturation of the free-electron concentration in delta -doped GaAs: the DX centre in two dimensions (1988) (87)
- Tunable absorption coefficient in GaAs doping superlattices (1982) (87)
- Kinetics of MnAs growth on GaAs(001) and interface structure (1999) (86)
- Magnetic structure of epitaxially grown MnAs on GaAs(001) (2000) (86)
- TEMPERATURE DEPENDENCE OF THE RADIATIVE LIFETIME IN GAN (1998) (84)
- Ferromagnetism of MnAs studied by heteroepitaxial films on GaAs(001). (2003) (83)
- Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy (1999) (83)
- Hopping conduction in the Landau level tails in GaAs-AlxGa1-xAs heterostructures at low temperatures (1983) (81)
- Optical dephasing of coherent intersubband transitions in a quasi-two-dimensional electron gas (2004) (79)
- Superhigh-frequency surface-acoustic-wave transducers using AlN layers grown on SiC substrates (2002) (79)
- Nonpolar InxGa1-xN/GaN(1(1)over-bar00) multiple quantum wells grown on gamma-LiAlO2(100) by plasma-assisted molecular-beam epitaxy (2003) (78)
- Determination of strain state and composition of highly mismatched group-III nitride heterostructures by x-ray diffraction (2002) (78)
- Surfactant-mediated molecular beam epitaxy of strained layer semiconductor heterostructures (1993) (76)
- Nitrogen-related electron traps in Ga(As, N) layers (≤3% N) (2003) (76)
- Polarization anisotropy of the photoluminescence of M-plane (In,Ga)N/GaN multiple quantum wells (2003) (76)
- One‐dimensional electronic systems in ultrafine mesa‐etched single and multiple quantum well wires (1988) (76)
- In-plane polarization anisotropy of the spontaneous emission of M-plane GaN/(Al,Ga)N quantum wells (2000) (76)
- Impact of Internal Electric Field and Localization Effect on Quantum Well Excitons in AlGaN/GaN/InGaN Light Emitting Diodes (2001) (74)
- Multistability of the current‐voltage characteristics in doped GaAs‐AlAs superlattices (1994) (72)
- Combined molecular beam epitaxy and diffractometer system forin situx-ray studies of crystal growth (2003) (72)
- Columnar AlGaN/GaN nanocavities with AlN/GaN Bragg reflectors grown by molecular beam epitaxy on Si(111). (2005) (72)
- Determination of the azimuthal orientational spread of GaN films by x-ray diffraction (2002) (72)
- Transport and lifetime enhancement of photoexcited spins in GaAs by surface acoustic waves. (2001) (70)
- Crystal structure of tetragonal boron related to α-AlB12 (1979) (69)
- Selectivity of growth on patterned GaAs (311)A substrates (1996) (68)
- Strong localization in InGaN layers with high In content grown by molecular-beam epitaxy (2002) (68)
- Growth of M-plane GaN(1 1̄ 0 0) on γ-LiAlO2(1 0 0) (2000) (68)
- ORIGIN OF ELECTRON DIFFRACTION OSCILLATIONS DURING CRYSTAL GROWTH (1998) (68)
- Evolution of the surface morphology of Fe grown on GaAs (100), (311)A, and (331)A substrates by molecular beam epitaxy (2001) (67)
- Density of states of GaAs-AlGaAs-heterostructures deduced from temperature dependent magnetocapacitance measurements (1986) (67)
- One‐dimensional lateral‐field‐effect transistor with trench gate‐channel insulation (1990) (66)
- Controlled n-type doping of AlN:Si films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy (2005) (65)
- Carrier trapping in single quantum wells with different confinement structures (1987) (65)
- Epitaxial Heusler alloy Co2FeSi∕GaAs(001) hybrid structures (2005) (64)
- Doping of group III nitrides (1998) (63)
- Microscopical Structuring of Solids by Molecular Beam Epitaxy—Spatially Resolved Materials Synthesis (1988) (63)
- Resonant polarons in a GaAs-GaAlAs heterostructure (1985) (63)
- Quantum beats between the light and heavy hole excitons in a quantum well (1990) (63)
- Direct observation of the initial nucleation and epitaxial growth of metastable cubic GaN on (001) GaAs (1997) (63)
- Magnetic properties of Fe 3 Si ∕ Ga As ( 001 ) hybrid structures (2005) (63)
- EXPLOSIVE BIFURCATION TO CHAOS IN WEAKLY COUPLED SEMICONDUCTOR SUPERLATTICES (1998) (62)
- NOVEL PLASTIC STRAIN-RELAXATION MODE IN HIGHLY MISMATCHED III-V LAYERS INDUCED BY TWO-DIMENSIONAL EPITAXIAL GROWTH (1995) (62)
- CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES 1080 Properties of SrBi2Ta2O9 ferroelectric thin films prepared by a modified metalorganic solution deposition technique (1997) (62)
- Growth of M-Plane GaN(11-00): A Way to Evade Electrical Polarization in Nitrides (2000) (62)
- Heteroepitaxy of Large-Misfit Systems: Role of Coincidence Lattice (2000) (62)
- Deep-level analysis in (AlGa)As—GaAs 2-D electron gas devices by means of low-frequency noise measurements (1984) (61)
- Quantum Mechanical Repulsion of Exciton Levels in a Disordered Quantum Well (2001) (61)
- Phase study of oscillatory resistances in microwave-irradiated- and dark-GaAs/AlGaAs devices: Indications of an unfamiliar class of the integral quantum Hall effect (2009) (60)
- Surface segregation of Sn during MBE of n‐type GaAs established by SIMS and AES (1978) (59)
- Electrical depth profile of p-type GaAs/Ga(As, N)/GaAs heterostructures determined by capacitance–voltage measurements (2000) (57)
- Selectively dopedn-AlxGa1−xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors (1984) (57)
- Structural and magnetic properties of epitaxial Fe3Si/GaAs(001) hybrid structures (2004) (57)
- Imaging of the dissipation in quantum-Hall-effect experiments (1991) (56)
- Bildung der gitter des reinen bors (1971) (55)
- Guided propagation of surface acoustic waves in AlN and GaN films grown on 4H-SiC(0001) substrates (2002) (55)
- Nonlinear response of radiatively coupled intersubband transitions of quasi-two-dimensional electrons (2005) (55)
- Fabrication and optical properties of semiconductor quantum wells and superlattices (1990) (55)
- AlGaN Nanocolumns Grown by Molecular Beam Epitaxy: Optical and Structural Characterization (2002) (55)
- Patterned growth on high‐index GaAs (n11) substrates: Application to sidewall quantum wires (1996) (55)
- B48B2C2 und B48B2N2, zwei Nichtmetallboride mit der Struktur des sog. I tetragonalen Bors (1972) (55)
- Fabrication of GHz-range surface-acoustic-wave transducers on LiNbO3 using imprint lithography (2002) (54)
- Magneto-quantumtransport on GaAs-AlxGa1−xAs heterostructures at very low temperatures (1982) (54)
- Crystal growth and structure determination of silicon telluride Si2Te3 (1976) (53)
- Phase-transition-induced residual strain in ferromagnetic MnAs films epitaxially grown on GaAs(001) (2001) (53)
- Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells (2004) (53)
- Composition and structure of boron carbides prepared by CVD (1974) (53)
- Polarization-dependent spectroscopic study of M-plane GaN on γ-LiAlO2 (2002) (53)
- Investigations on V-defects in quaternary AlInGaN epilayers (2004) (52)
- Coherent control of exciton density and spin (1996) (52)
- Molecular Beam Epitaxy of III-V Compounds: Technology and Growth Process (1981) (51)
- Effect of annealing on the magnetic properties of Gd focused ion beam implanted GaN (2007) (51)
- Polarization of valence band holes in the (Ga,Mn)as diluted magnetic semiconductor. (2005) (51)
- MBE growth of cubic GaN on GaAs substrates (1996) (51)
- Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (2000) (51)
- Crack-free and conductive Si-doped AlN∕GaN distributed Bragg reflectors grown on 6H-SiC(0001) (2004) (51)
- Growth of M-plane GaN films on γ-LiAlO2(100) with high phase purity (2003) (50)
- Kohlenstoff-induzierte gitter beim bor: I-tetragonales (B12)4B2C und (B12)4B2C2 (1971) (50)
- Polarization-sensitive ultraviolet photodetectors based on M-plane GaN grown on LiAlO2 substrates (2006) (50)
- Shape transition of coherent three-dimensional (In,Ga)As islands on GaAs(100) (2001) (49)
- EVALUATION OF THE SURFACE STOICHIOMETRY DURING MOLECULAR BEAM EPITAXY OF CUBIC GAN ON (001) GAAS (1996) (49)
- Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy (1997) (49)
- Mesoscopic spin confinement during acoustically induced transport (2007) (48)
- Contribution of reflection high-energy electron diffraction to nanometre tailoring of surfaces and interfaces by molecular beam epitaxy (1994) (47)
- Magnetologic with alpha-MnAs thin films. (2003) (47)
- Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions (1996) (47)
- Assessment of persistent-photoconductivity centers in MBE grown AlxGa1-xas using capacitance spectroscopy measurements (1982) (47)
- Localized and delocalized states in GaNAs studied by microphotoluminescence and photoreflectance (2009) (47)
- Atomic scale morphology of self-organized periodic elastic domains in epitaxial ferromagnetic MnAs films (2002) (47)
- Properties of InN layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy (2004) (47)
- Femtosecond Carrier Kinetics in Low-temperature-grown GaAs (1992) (47)
- Homogeneous broadening and excitation-induced dephasing of intersubband transitions in a quasi-two-dimensional electron gas (2001) (47)
- Self-Oscillations of the Current in Doped Semiconductor Superlattices (1995) (46)
- MnAs nanoclusters embedded in GaAs studied by x-ray diffuse and coherent scattering (2003) (46)
- Electro‐optical multistability in GaAs/AlAs superlattices at room temperature (1990) (46)
- Structural and optical properties of Al0.48In0.52As layers grown on InP by molecular beam epitaxy: Influence of the substrate temperature and of a buffer layer (1991) (46)
- Ultrathin-layer (AlAs)m(GaAs)m superlattices withm = 1,2,3 grown by molecular beam epitaxy (1987) (46)
- Hopping transport in δ-doping layers in GaAs (1990) (45)
- Two‐dimensional exciton transport in GaAs/GaAlAs quantum wells (1988) (45)
- Nonuniform segregation of Ga at AlAs/GaAs heterointerfaces (1997) (45)
- Understanding the submicron domain structure of MnAs thin films on GaAs(001): Magnetic force microscopy measurements and simulations (2004) (44)
- Dynamic band-structure modulation of quantum wells by surface acoustic waves (2001) (44)
- Energy resolved ultrafast relaxation dynamics close to the band edge of low-temperature grown GaAs (1997) (44)
- Schottky-barrier tunneling spectroscopy for the electronic subbands of a δ-doping layer (1986) (44)
- Resonant and non-resonant tunneling in GaAsAlAs multi quantum well structures (1989) (44)
- Self-organized quantum wires formed by elongated dislocation-free islands in (In,Ga)As/GaAs(100) (2001) (43)
- Raman scattering of (GaAs)n(AlAs)n superlattices (1988) (43)
- Direct synthesis of semiconductor quantum‐wire and quantum‐dot structures (1993) (43)
- Element specific investigations of the structural and magnetic properties of Gd:GaN (2007) (42)
- UNIFORM MULTIATOMIC STEP ARRAYS FORMED BY ATOMIC HYDROGEN ASSISTED MOLECULAR BEAM EPITAXY ON GAAS (331) SUBSTRATES (1998) (42)
- Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy (2001) (41)
- Ga adsorption and desorption kinetics on M-plane GaN (2004) (41)
- Quasi-two-dimensional photoexcited carriers in GaAs doping superlattices (1982) (41)
- Electro-optic imaging of potential distributions in the quantum Hall regime (1995) (41)
- Photoluminescence study of electron-hole recombination across the tunable effective gap in GaAs n-i-p-i superlattices (1982) (40)
- In situ characterization of MBE grown GaAs and AlxGa1−xAs films using RHEED, SIMS, and AES techniques (1977) (40)
- Recombination dynamics in GaN (1998) (40)
- Landau level broadening and Van Hove singularities in lateral surface superlattices (1990) (40)
- Optical properties of AlAs (1987) (40)
- Measurement of threading dislocation densities in GaN by wet chemical etching (2006) (40)
- Spin filtering in a hybrid ferromagnetic-semiconductor microstructure. (2004) (40)
- Incorporation of Si in δ‐doped GaAs studied by local vibrational mode spectroscopy (1989) (40)
- GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm (2003) (40)
- Simultaneous modulation of electron and hole conductivity in a new periodic GaAs doping multilayer structure (1981) (39)
- SPIN FLIP OF EXCITONS IN GAAS QUANTUM WELLS (1997) (39)
- Anisotropy-induced polarization mixture of surface acoustic waves in GaN/c-sapphire heterostructures (2005) (39)
- Interplay between the growth temperature, microstructure, and optical properties of GaInNAs quantum wells (2003) (39)
- FEMTOSECOND NEAR-FIELD SPECTROSCOPY OF A SINGLE GAAS QUANTUM WIRE (1999) (39)
- Long-range order in thin epitaxial Fe3Si films grown on GaAs(001) (2005) (38)
- HEAVY-LIGHT HOLE QUANTUM BEATS IN THE BAND-TO-BAND CONTINUUM OF GAAS OBSERVED IN 20 FEMTOSECOND PUMP-PROBE EXPERIMENTS (1997) (38)
- Single charge tunneling, coulomb blockade phenomena in nanostructures. Edited by H. Grabert and M. H. Devoret, NATO Adv. Sci. Inst. Ser. B, Vol. 294, Plenum Press, New York 1992, 335 pp., hardback, $ 89.50, ISBN 0‐306‐44229‐9 (1993) (38)
- Cubic (In,Ga)N layers grown on GaAs(001) by dc plasma-assisted molecular beam epitaxy (1997) (38)
- Surfactant-mediated molecular-beam epitaxy of III–V strained-layer heterostructures (1995) (38)
- Thickness dependence of the magnetic properties of MnAs films on GaAs(001) and GaAs(113)A: Role of a natural array of ferromagnetic stripes (2004) (38)
- Magnetic phases and anisotropy in Gd-doped GaN (2006) (37)
- Ultrafast metal‐semiconductor‐metal photodiodes fabricated on low‐temperature GaAs (1992) (37)
- INTENSITY DEPENDENCE OF SUPERRADIANT EMISSION FROM RADIATIVELY COUPLED EXCITONS IN MULTIPLE-QUANTUM-WELL BRAGG STRUCTURES (1998) (37)
- Diffusion and incorporation: shape evolution during overgrowth on structured substrates (2001) (37)
- The effect of arsenic vapour species on electrical and optical properties of GaAs grown by molecular beam epitaxy (1982) (37)
- Growth mode, strain relief, and segregation of (Ga,In)Sb on GaSb(001) grown by molecular beam epitaxy (1996) (37)
- Electron traps in Ga(As,N) layers grown by molecular-beam epitaxy (2002) (37)
- Molecular beam epitaxy growth and doping of III-nitrides on Si(1 1 1): layer morphology and doping efficiency (2001) (37)
- Decomposition in as-grown (Ga,In)(N,As) quantum wells (2005) (37)
- Temperature-dependent magnetic force microscopy investigation of epitaxial MnAs films on GaAs(001) (2003) (36)
- Tunable electroluminescence from GaAs doping superlattices (1982) (36)
- Thermopower measurements on the two-dimensional electron gas of GaAs-AlxGa1−xAs heterostructures (1984) (36)
- The benefit of disorder (2006) (36)
- Microstructure of M-plane GaN epilayers grown on γ-LiAlO2 by plasma-assisted molecular beam epitaxy (2004) (36)
- Near-field optical spectroscopy of localized and delocalized excitons in a single GaAs quantum wire (2001) (36)
- Nonradiative recombination centers in Ga(As, N) and their annealing behavior studied by Raman spectroscopy (2004) (36)
- GaAs sawtooth superlattice laser emitting at wavelengths greater than 0. 9 micron (1985) (36)
- Localization in GaAs electron-dots and anti-dots (1991) (36)
- High transconductance in‐plane‐gated transistors (1992) (35)
- Crystal structure of I-tetragonal boron (1974) (35)
- X‐Ray Analysis of Structural Defects in a Semiconductor Superlattice (1990) (35)
- Antisymmetric contribution to the planar Hall effect of Fe 3 Si films grown on GaAs (113) A substrates (2005) (35)
- RAMAN SCATTERING BY ACOUSTIC PHONONS AND STRUCTURAL PROPERTIES OF FIBONACCI, THUE-MORSE AND RANDOM SUPERLATTICES (1987) (35)
- Ultrafast coherent carrier control in quantum wells (1996) (35)
- Structural and magnetic properties of (Ga,Mn)N layers grown on SiC by reactive molecular beam epitaxy (2003) (34)
- Das B-C-system im kinetischen bildungsbereich: Pyrolytische bildung kohlenstoffreicher B-C-Phasen (1971) (34)
- Structural properties of GaN layers on Si(001) grown by plasma-assisted molecular beam epitaxy (1998) (34)
- Application of liftoff low‐temperature‐grown GaAs on transparent substrates for THz signal generation (1996) (34)
- MBE growth, structure and magnetic properties of MnAs on GaAs on a microscopic scale (2001) (34)
- Optical gain in optically pumped cubic GaN at room temperature (1997) (34)
- Photoluminescence of virtual-surfactant grown InAs/Al0.48In0.52As single quantum wells (1992) (34)
- Tailoring of the structural and magnetic properties of MnAs films grown on GaAs—Strain and annealing effects (2005) (34)
- Optimized growth conditions for the epitaxial nucleation of β-GaN on GaAs(001) by molecular beam epitaxy (1997) (34)
- Strained M-plane GaN for the realization of polarization-sensitive photodetectors (2002) (34)
- Free-carrier absorption in Be- and C-doped GaAs epilayers and far infrared detector applications (2001) (34)
- M-plane GaN grown on γ-LiAlO2(100): nitride semiconductors free of internal electrostatic fields (2001) (34)
- Correlation between interface structure and light emission at 1.3–1.55 μm of (Ga,In)(N,As) diluted nitride heterostructures on GaAs substrates (2004) (34)
- Investigation of persistent photoconductivity in Si-dopedn-AlxGa1−xas grown by molecular beam epitaxy (1983) (34)
- Spin injection in ferromagnet-semiconductor heterostructures at room temperature (invited) (2002) (34)
- Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE (2003) (33)
- Energies of strained vicinal surfaces and strained islands (2001) (33)
- Reactive molecular-beam epitaxy of GaN layers directly on 6H–SiC(0001) (1999) (33)
- Molecular Beam Epitaxy of Iii-V Compounds (1984) (33)
- Luminescence properties of (GaAs)l(AlAs)m superlattices with (l,m) ranging from 1 to 73 (1988) (32)
- COHERENT EXCITATION SPECTROSCOPY ON INHOMOGENEOUS EXCITON ENSEMBLES (1999) (32)
- Ferrimagnetic Mn4N(111) layers grown on 6H-SiC(0001) and GaN(0001) by reactive molecular-beam epitaxy (2005) (32)
- Heavy carbon doping of GaAs grown by solid-source molecular-beam epitaxy (1992) (32)
- Growth control of MnAs on GaAs(001) by reflection high-energy electron diffraction (2000) (31)
- Element specific magnetic properties of Gd doped GaN: Very small polarization of Ga and paramagnetism of Gd (2008) (31)
- GaAs Substrate Preparation for Oval-Defect Elimination during MBE Growth (1986) (31)
- Domain formation on the reconstructed GaAs(001) surface (1995) (31)
- Quantitative evaluation of substrate temperature dependence of Ge incorporation in GaAs during molecular beam epitaxy (1980) (30)
- InAs/Ga0.47In0.53As quantum wells: A new III‐V materials system for light emission in the mid‐infrared wavelength range (1992) (30)
- MAGNETIC CORRELATIONS, GEOMETRICAL FRUSTRATION, AND TUNABLE DISORDER IN ARRAYS OF SUPERCONDUCTING RINGS (1997) (29)
- Nucleation and growth of GaN layers on GaAs, Si, and SiC substrates (1998) (29)
- Study of time-resolved luminescence in GaAs doping superlattices (1983) (29)
- Electronic structure of cubic gallium nitride films grown on GaAs (1996) (29)
- Thermal stability and atomic ordering of epitaxial Heusler alloy Co2FeSi films grown on GaAs(001) (2005) (29)
- Transient absorption spectra of a modulation‐doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum well structure measured by picosecond infrared pulses (1989) (29)
- Admittance dispersion of n-type GaAs/Ga(As, N)/GaAs heterostructures grown by molecular beam epitaxy (2001) (29)
- Variable range hopping transport in the tails of the conductivity peaks between quantum Hall plateaus (1995) (29)
- Surface reconstruction, screw dislocations and anisotropic step flow growth of MnAs on GaAs(111)B substrates (2002) (29)
- Potential drops across quantum Hall effect samples — in the bulk or near the edges? (1996) (29)
- Surface-acoustic-wave-induced carrier transport in quantum wires (2002) (29)
- AlGaN Nanocolumns and AlGaN/GaN/AlGaN Nanostructures Grown by Molecular Beam Epitaxy (2002) (28)
- Influence of alloy composition, substrate temperature, and doping concentration on electrical properties of Si-doped n-Alx Ga1−x As grown by molecular beam epitaxy (1984) (28)
- LETTER TO THE EDITOR: Pressure dependence of electron concentration and mobility in GaAs:Si-effects of on-site and inter-site interactions within a system of DX centres (1990) (28)
- Effect of In segregation on the structural and optical properties of ultrathin InAs films in GaAs (1992) (28)
- Enhancement of optical nonlinearity in strained (InGa)As sidewall quantum wires on patterned GaAs (311)A substrates (1997) (28)
- PERIODIC DOPING STRUCTURE IN GaAs (1980) (28)
- Lateral phase separation in AlGaN grown on GaN with a high-temperature AlN interlayer (2005) (28)
- Ultrafast near-field spectroscopy of quasi-one-dimensional transport in a single quantum wire (2000) (28)
- Interpretation of Capacitance-Voltage Profiles from Delta-Doped GaAs Grown by Molecular Beam Epitaxy (1986) (28)
- MnAs nanoclusters embedded in GaAs: synthesis and properties (2004) (27)
- Properties of a Dense Quasi Two Dimensional Electron-Hole GAS at High Magnetic Fields (1990) (27)
- Intersubband absorption in a modulation‐doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum well structure (1988) (27)
- Coherent nonlinear propagation of ultrafast electric field-transients through intersubband resonances (2001) (27)
- Surface stoichiometry, epitaxial morphology and strain relaxation during molecular beam epitaxy of highly strained InAs/Ga0.47In0.53As heterostructures (1994) (27)
- Atomic ordering and interlayer diffusion of Co2FeSi films grown on GaAs(001) studied by transmission electron microscopy (2007) (27)
- Surface studies during molecular beam epitaxy of gallium arsenide (1979) (27)
- Ferromagnetic MnAs grown on GaAs(001): In situ investigations (2000) (27)
- Photoluminescence of GaAs single quantum wells confined by short‐period all‐binary GaAs/AlAs superlattices (1984) (27)
- Device quality submicron arrays of stacked sidewall quantum wires on patterned GaAs (311)A substrates (1998) (26)
- Growth and mosaic model of GaN grown directly on 6H-SiC(0001) by direct current plasma assisted molecular beam epitaxy (1998) (26)
- Structural investigation by X-ray diffraction of GaAs epilayers and AlAs/GaAs superlattices grown on Si by MBE (1989) (26)
- Elimination of GaAs oval defects and high-throughput fabrication of selectively doped AlxGa1−xAs/GaAs heterostructures by MBE (1987) (26)
- Free‐exciton luminescence in GaSb quantum wells confined by short‐period AlSb‐GaSb superlattices (1985) (26)
- Electronic structure of Mn ions in (Ga,Mn)As diluted magnetic semiconductor (2002) (26)
- Influence of interface quality on structural and optical properties of GaxIn1−xAs/AlyIn1−yAs superlattices lattice matched to (001) InP (1989) (25)
- Density of states in a two-dimensional electron gas in a strong magnetic field (1985) (25)
- Surface-acoustic-wave transducers for the extremely-high-frequency range using AlN/SiC(0001) (2004) (25)
- High-quality distributed Bragg reflectors based on AlxGa1−xN/GaN multilayers grown by molecular-beam epitaxy (2001) (25)
- Overdamped excitations of the free electron gas in GaN layers studied by Raman spectroscopy (1998) (25)
- Fractal structure in optical spectra of Fibonacci superlattices (1994) (25)
- Density of States in Landau Level Tails of GaAs-AlxGa1-xAs Heterostructures (1986) (25)
- Chapter 7 Crystal Structure of Group III Nitrides (1997) (25)
- Electrical and optical time‐of‐flight experiments in GaAs/AlAs superlattices (1989) (25)
- Quantization of excitonic polaritons in thin GaAs layers (1984) (25)
- Successive Wannier-Stark localization and excitonic enhancement of intersubband absorption in a short-period GaAs/AlAs superlattice (1989) (25)
- Molecular Beam Epitaxy of III-V Compounds: Application of MBE-Grown Films (1982) (25)
- Magnetization reversal in MnAs films: Magnetic force microscopy, SQUID magnetometry, and micromagnetic simulations (2006) (25)
- Improved Heterointerface and Vertical Transport in GaAs Single Quantum Well Confined by All-Binary GaAs/AlAs Short-Period-Superlattices (1985) (25)
- Periodic array of misfit dislocations at the MnAs/GaAs interface studied by synchrotron x-ray diffraction (2005) (25)
- Magnetic anisotropy of MnAs-films on GaAs(0 0 1) studied with ferromagnetic resonance (2004) (25)
- Zur synthese und struktur von Li2Pt und LiPt (1975) (25)
- Microstructure formation during MnAs growth on GaAs(0 0 1) (1999) (24)
- Resonant Tunnelling and Miniband Conduction in GaAs/AlAs Superlattices Studied by Electrical Time-Of-Flight Techniques (1989) (24)
- Nitrogen-dependent optimum annealing temperature of Ga(As,N) (2004) (24)
- Influence of heteroepitaxy on the width and frequency of the E2 (high)-phonon line in GaN studied by Raman spectroscopy (2001) (24)
- RELOCATION TIME OF THE DOMAIN BOUNDARY IN WEAKLY COUPLED GAAS/ALAS SUPERLATTICES (1998) (24)
- Growth of high-quality (Al,Ga)N and (Ga,In)N heterostructures on SiC(0001) by both plasma-assisted and reactive molecular beam epitaxy (2000) (24)
- Spectroscopy of quantum dots and antidots (1992) (24)
- Improvedp/n junctions in Ge-doped GaAs grown by molecular beam epitaxy (1979) (24)
- Reduction of Remote Impurity Scattering in Heavily Modulation-Doped GaAs and (GaIn)As Quantum Wells with AlAs/GaAs Type-II-Superlattice Barriers (1998) (23)
- High Precision Measurements of the Quantized Hall Resistance at the PTB (1985) (23)
- Optical and structural properties of ternary alloy AlxGa1−xAs/AlAs multiple‐quantum‐well structures (1992) (23)
- Exciton transport into a single GaAs quantum wire studied by picosecond near-field optical spectroscopy (1998) (23)
- Nanoscale mapping of confinement potentials in single semiconductor quantum wires by near-field optical spectroscopy (1998) (23)
- Magnetic out-of-plane component in MnAs/GaAs(001) (2003) (23)
- Order-driven contribution to the planar hall effect in Fe3Si thin films (2005) (23)
- Effect of spatial localization of dopant atoms on the spacing of electron subbands in δ-doped GaAs:Si (1991) (23)
- Photoreflectance studies of GaAs containing a Si‐δ‐doping layer (1991) (23)
- Valence and core level photoemission spectra of AlxGa1−xAs (1978) (23)
- Resonant Raman scattering in strained and relaxed InGaN∕GaN multi-quantum wells (2005) (22)
- Optical properties of heavily doped G a N / ( A l , G a ) N multiple quantum wells grown on 6 H − S i C ( 0001 ) by reactive molecular-beam epitaxy (2000) (22)
- Coherent effects in resonant quantum-well emission (1999) (22)
- Lateral spreading of focused ion-beam-induced damage (1992) (22)
- Direct synthesis of GaAs quantum-wire structures by molecular-beam epitaxy on (311) surfaces (1992) (22)
- Optical second-harmonic probe for ultra-high frequency on-chip interconnects with benzocyclobutene (1998) (22)
- Long-wavelength (Ga, In)Sb/GaSb strained quantum well lasers grown by molecular beam epitaxy (1998) (22)
- Triple crystal x‐ray diffractometry of periodic arrays of semiconductor quantum wires (1993) (22)
- Electrostatic fields and compositional fluctuations in (In, Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular-beam epitaxy (2001) (22)
- Gd-doped GaN studied with element specificity: Very small polarization of Ga, paramagnetism of Gd and the formation of magnetic clusters (2010) (22)
- Fermi edge singularity and screening effects in the absorption and luminescence spectrum of Si δ‐doped GaAs (1991) (22)
- Virtual‐surfactant epitaxy of strained InAs/Al0.48In0.52As quantum wells (1993) (22)
- Observation and analysis of quantum wire structures by high-resolution X-ray diffraction (1992) (22)
- Reflectance of two-dimensional excitons in GaAs-AlGaAs quantum wells (1984) (22)
- Periodic mesoscopic step arrays by step bunching on high-index GaAs surfaces (1993) (22)
- LETTER TO THE EDITOR: Electronic transport of the delta -doping layer in the dilute density limit (1989) (22)
- Homogeneous gain saturation in GaAs/AlGaAs quantum well lasers (1985) (22)
- Violet and blue emitting (In,Ga)N/GaN multiple quantum wells grown on γ-LiAlO2(100) by radio frequency plasma-assisted molecular beam epitaxy (1999) (22)
- Structural characterization of thin GaN epilayers directly grown on on-axis 6H–SiC(0001) by plasma-assisted molecular beam epitaxy (1998) (22)
- Growth temperature dependent interfacial reaction of Heusler-alloy Co2FeSi/GaAs(001) hybrid structures (2007) (22)
- Nature of the magnetic and structural phase transition in MnAs / GaAs ( 001 ) (2004) (22)
- Intersubband resonances in quasi-one-dimensional channels (1988) (21)
- Thermomagnetic behaviour of the two-dimensional electron gas in GaAsAlxGa1−xAs heterostructures (1986) (21)
- Ultrafast optical nonlinearities of type II AlxGa1−xAs/AlAs multiple quantum wells (1990) (21)
- Transition between synchronization and chaos in doped GaAs/AlAs superlattices (1997) (21)
- Growth processes and relaxation mechanisms in the molecular beam epitaxy of InAs/GaAs heterostructures (1991) (21)
- Pump-probe investigations of biexcitons in GaAs quantum wells (1994) (21)
- Optical and structural properties of molecular-beam epitaxially grown Ga0.47In0.53As/Al0.48In0.52As superlattices, emitting at 1.55 μm at room temperature (1985) (21)
- Structural and optical characterization of thick InGaN layers and InGaN/GaN MQW grown by molecular beam epitaxy (2002) (21)
- Measurements of ballistic transport at nonuniform magnetic fields in cross junctions of a curved two-dimensional electron gas (2007) (21)
- Influence of composition fluctuations in Al(Ga)As barriers on the exciton localization in thin GaAs quantum wells (1997) (21)
- Photoluminescence from hot carriers in low‐temperature‐grown gallium arsenide (1992) (21)
- Defect control during growth of highly mismatched (100) {InAs}/{GaAs-heterostructures} (1995) (21)
- Preparation of lanthanum hexaboride by electrolysis and measurements of the Raman-active phonons (1976) (21)
- (Al,In)N layers and (Al,In)N/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on 6H-SiC(0001) (2008) (21)
- Layer-by-layer growth of GaAs( 0 0 1 ) studied by in situ synchrotron X-ray diffraction (2003) (21)
- Micromechanics of MnAs nanocrystals embedded in GaAs (2005) (21)
- Indentation of GaN: A study of the optical activity and strain state of extended defects (2002) (21)
- The crystal structure of tetragonal boron (1979) (21)
- Molecular-beam epitaxial growth and surface characterization of GaAs(311)B (2001) (21)
- Hot-electron photoluminescence study of the ( Ga , Mn ) As diluted magnetic semiconductor (2006) (21)
- Hot carrier cooling in gaas quantum wells (1988) (21)
- Image of the dissipation in gated quantum Hall effect samples (1992) (21)
- Selectively dopedn-AlxGa1−xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors (1984) (20)
- In surface segregation during growth of (In, Ga)N/GaN multiple quantum wells by plasma-assisted molecular beam epitaxy (2002) (20)
- Atomically engineered interfaces for spin injection: ultrathin epitaxial Fe films grown on As- and Ga-terminated GaAs(001) substrates (2004) (20)
- MBE of quantum wires and quantum dots (2001) (20)
- Electron subband structure in selectively doped n-AlxGa1-xAs/GaAs heterostructures (1985) (20)
- Scanning tunneling microscopy of the GaAs (311)A surface reconstruction (1995) (20)
- INTERFERENCE EFFECTS IN ACOUSTIC-PHONON RAMAN SCATTERING FROM GAAS/ALAS MIRROR-PLANE SUPERLATTICES (1997) (20)
- Morphological instabilities on exactly oriented and on vicinal GaAs (001) surfaces during molecular beam epitaxy (1995) (20)
- Optimized annealing conditions identified by analysis of radiative recombination in dilute Ga(As,N) (2003) (20)
- The quantum Hall ferromagnet at high filling factors: A magnetic field induced Stoner transition (2005) (19)
- Observation of bistability in GaAs/AlAs superlattices (1997) (19)
- Optical properties of wurtzite AlxGa1-xN (x < 0.1) parallel and perpendicular to the c axis (2001) (19)
- Observation of tunable room temperature photoluminescence in GaAs doping superlattices (1986) (19)
- In situ technique for measuring Ga segregation and interface roughness at GaAs/AlGaAs interfaces (1994) (19)
- Free and bound excitons and the effect of alloy disorder in MBE grown AlxGa1-xAs (1985) (19)
- Novel far‐infrared‐photoconductor based on photon‐induced interedge channel scattering (1991) (19)
- GaAs saw-tooth superlattice light-emitting diode operating monochromatically at λ ⩾ 0.9 μm (1985) (19)
- High-throughput high-yield fabrication of selectively doped AlxGa1−xAs/GaAs heterostructures by molecular beam epitaxy (1986) (19)
- Single-electron tunnelling transistor as a current rectifier with potential-controlled current polarity (1995) (19)
- Optical transitions in cubic GaN investigated by spatially resolved cathodoluminescence (1996) (19)
- Lateral transport through a single quantum dot with a magnetic field parallel to the current (1994) (19)
- QUANTUM POINT CONTACT SPECTROSCOPY OF D-WAVE SUPERCONDUCTORS (1999) (19)
- Green photoluminescence from cubic In0.4Ga0.6N grown by radio frequency plasma-assisted molecular beam epitaxy (1998) (19)
- Growth mechanism of GaAs on (110) GaAs studied by high‐energy electron diffraction and atomic force microscopy (1994) (19)
- Preparation of one-dimensional single and multi-layered quantum wire structures by ultrafine deep mesa etching techniques (1989) (19)
- Fullwave Analysis of Open-End Discontinuties in Coplanar Stripline and Finite Ground Plane Coplanar Waveguide in Open Environments using a Deterministic Spectral Domain Approach (1991) (18)
- Optimisation of modulation-doped heterostructures for TEGFET operation at room temperature (1984) (18)
- Extreme Anisotropy of the g-Factor in Quantum Wires (1995) (18)
- Molecular beam epitaxial growth and structural properties of DyBa2Cu3O7−y superconducting thin films (1993) (18)
- Energy Gaps of the Fractional Quantum Hall Effect Measured by Magneto-Optics (1992) (18)
- Characterization of zinc blende InxGa1−xN grown by radio frequency plasma assisted molecular beam epitaxy on GaAs (001) (1997) (18)
- First-order phase transition in MnAs disks on GaAs (001) (2006) (18)
- Molecular beam epitaxy of semiconductor quantum wells and superlattices (1986) (18)
- Structural and magnetic order in MnAs films grown by molecular beam epitaxy on GaAs for spin injection (2002) (18)
- Photoluminescence in GaAs doping superlattices (1983) (18)
- GaN/AlGaN nanocavities with AlN/GaN Bragg reflectors grown in AlGaN nanocolumns by plasma assisted MBE (2005) (18)
- Suppression of the Bragg reflection in semiconductor multiple quantum wells by excitation induced dephasing (1998) (18)
- High frequency characteristics of in‐plane‐gate transistors (1992) (18)
- Propagation of surface acoustic waves in a GaAs/AlAs/GaAs heterostructure and micro-beams (2002) (18)
- Investigation of InAs submonolayer and monolayer structures on GaAs(100) and (311) substrates (1993) (18)
- Size quantization by faceting in (110)‐oriented GaAs/AlAs heterostructures (1992) (18)
- Validity of vegard's rule for the lattice parameter and the stiffness elastic constant ratios of the AlGaAs ternary compound (1998) (18)
- Growth temperature dependent evolution of the interface structure in Co2FeSi∕GaAs(001) hybrid structures (2006) (17)
- Growth of cubic GaN on Si(001) by plasma-assisted MBE (1998) (17)
- Influence of interedge channel scattering on the magneto-transport of 2D-systems (1992) (17)
- Effect of strain on the local phase transition temperature of MnAs/GaAs(001) (2003) (17)
- Strained InAs single quantum wells embedded in a Ga0.47In0.53As matrix (1992) (17)
- Properties of cubic (In,Ga)N grown by molecular beam epitaxy (1999) (17)
- High-Mobility Two-Dimensional Electron Gas from Delta-Doped Asymmetric AlxGa1-xAs/GaAs/AlyGa1-yAs Quantum Wells (1987) (17)
- Transport spectroscopy on a single quantum dot (1994) (17)
- Raman scattering of & superlattices grown along the [012] direction (1989) (17)
- Defect-induced Raman scattering in resonance with yellow luminescence transitions in hexagonal GaN on a sapphire substrate (1998) (17)
- Field dependence of micromagnetic domain patterns in MnAs films (2005) (17)
- Realization of an in‐plane‐gate single‐electron transistor (1993) (17)
- In surface segregation in M-plane (In, Ga)N/GaN multiple quantum well structures (2003) (17)
- Al compositional inhomogeneity of AlGaN epilayer with a high Al composition grown by metal–organic chemical vapour deposition (2007) (17)
- Fermi edge singularity in the luminescence of modulation‐doped Ga0.47In0.53As/Al0.48In0.52As single heterojunctions (1990) (17)
- Anisotropic misfit dislocation nucleation in two-dimensional grown InAs/GaAs(001) heterostructures (1998) (17)
- MBE‐grown insulating oxide films on GaAs (1979) (17)
- Magnetooptics of the incompressible Fermi liquid and of the Wigner solid (1992) (17)
- Influence of exciton localization on the quantum efficiency of GaN/(In,Ga)N multiple quantum wells grown by molecular-beam epitaxy (2002) (17)
- Redistribution of epitaxial Si on (001) GaAs during overgrowth by GaAs (1991) (17)
- Photoexcited transport in GaAs/AlAs quantum wells (1986) (16)
- Magnetization of two-dimensional square arrays of nanomagnets (2005) (16)
- Direct synthesis of semiconductor quantum wires by molecular-beam epitaxy on (311) surfaces (1991) (16)
- Nitrogen-induced suppression of an indium-gallium interdiffusion in InxGa1−xAs1−yNy∕GaAs multiple-quantum wells (2005) (16)
- Statistics of the domain-boundary relocation time in semiconductor superlattices (2001) (16)
- Luminescence experiments on acceptor δ-doped GaAs-AlGaAs single heterojunctions with optically tunable electron concentration (1990) (16)
- Exciton localization and quantum efficiency—A comparative cathodoluminescence study of (In,Ga)N/GaN and GaN/(Al,Ga)N quantum wells (2003) (16)
- Optical gain in GaAs doping superlattices (1983) (16)
- Suppression of Raman scattering by interface phonons in quantum wells under high photoexcitation (1988) (16)
- Inter- and intrasubband relaxation times in quantum wells measured by femtosecond time-resolved differential transmission (1996) (16)
- Endotaxy of MnSb into GaSb (2007) (16)
- Resonant one-acoustic-phonon Raman scattering in multiple quantum wells (1992) (16)
- Epitaxial growth of Fe3Si/GaAs(0 0 1) hybrid structures for spintronic application (2005) (16)
- Cooling of hot carriers in Ga0.47In0.53As (1987) (16)
- Mesoscopic step arrays by periodic step bunching on high-index GaAs surfaces (1993) (16)
- Transition between static and dynamic electric-field domain formation in weakly coupled GaAs/AlAs superlattices (1998) (16)
- Ellipsometric and reflectance studies of GaAs/AlAs superlattices (1989) (16)
- Efficiency optimization of p-type doping in GaN:Mg layers grown by molecular-beam epitaxy (2004) (16)
- Ground and excited state transitions in as-grown Ga0.64In0.36N0.046As0.954 quantum wells studied by contactless electroreflectance (2007) (16)
- The nature of charged zig-zag domains in MnAs thin films (2006) (16)
- Virtual-surfactant epitaxy of InAs quantum wells (1993) (16)
- Growth, interface structure, and magnetic properties of Fe/GaAs and Fe3Si/GaAs hybrid systems (2006) (16)
- Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition (2000) (16)
- Properties of cubic GaN grown by MBE (1997) (16)
- Spontaneous growth of arsenic oxide micro-crystals on chemically etched MnAs surfaces (2003) (16)
- tunable in-plane-gated (IPG) quantum wire structures fabricated with directly written focused ion beams (1990) (16)
- MULTIFRACTAL DIMENSION OF CHAOTIC ATTRACTORS IN A DRIVEN SEMICONDUCTOR SUPERLATTICE (1999) (16)
- Real-time dynamics of the acoustically induced carrier transport in GaAs quantum wires (2003) (16)
- Raman-active phonons in α-boron (1975) (16)
- Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition (2008) (15)
- Scanning tunneling potentiometry of semiconductor junctions (2002) (15)
- Quantum mechanical repulsion of exciton levels in a disordered quantum well. (2002) (15)
- On the origin of Franz-Keldysh oscillations in AlGaAs/GaAs modulation-doped heterojunctions (1991) (15)
- Epitaxial growth of 6H-AlN on M-plane SiC by plasma-assisted molecular beam epitaxy (2007) (15)
- Investigation of field, carrier, and coherent phonon dynamics in low‐temperature grown GaAs (1993) (15)
- Fowler–Nordheim tunneling and conduction‐band discontinuity in GaAs/GaAlAs high electron mobility transistor structures (1987) (15)
- Exciton impact-ionization dynamics modulated by surface acoustic waves in GaN (2007) (15)
- Enhancement of the photoluminescence intensity in short-period GaAs/AlAs superlattices with different well and barrier thickness (1999) (15)
- Erratum: Nonpolar In x Ga 1-x N/GaN(11̄00) multiple quantum wells grown on γ-LiAlO 2 (100) by plasma-assisted molecular-beam epitaxy [Phys. Rev. B 67, 041306(R) (2003)] (2004) (15)
- Selection criteria for AlGaAs‐GaAs heterostructures in view of their use as a quantum Hall resistance standard (1989) (15)
- Evolution of Fano resonances in two- and three-dimensional semiconductors with a magnetic field (1996) (15)
- Silicon-induced nanostructure evolution of the GaAs(001) surface (2000) (15)
- Deep level analysis in heterostructure field-effect transistors by means of the photo-FET method (1986) (15)
- Structural and magnetic phase transition in MnAs(0001)/GaAs(111) epitaxial films (2003) (15)
- Preparation of quantum wires and quantum dots by deep mesa etching of AlGaAs-GaAs and InGaAs-InAlAs heterostructures (1990) (15)
- Self-organized etching technique for fabricating a quasiregular array of MnAs nanoislands (2003) (15)
- Determination of photoexcited carrier concentration and mobility in GaAs doping superlattices by hall effect measurements (1982) (15)
- Interplay between growth kinetics and material quality of cubic GaN (1997) (15)
- Near-field optical imaging and spectroscopy of a coupled quantum wire-dot structure (2001) (15)
- X-ray diffraction study of corrugated semiconductor surfaces, quantum wires and quantum ☐es (1992) (15)
- MBE-grown high-quality (Al, Ga)N/GaN distributed Bragg reflectors for resonant cavity LEDs (2001) (15)
- Structural and vibrational properties of (InAs)m(GaAs)n strained superlattices grown by molecular beam epitaxy (1991) (15)
- Indium Surface Segregation during Growth of (In,Ga)N/GaN Multiple Quantum Wells by Plasma‐Assisted Molecular Beam Epitaxy (2001) (15)
- Femtosecond near‐field spectroscopy: carrier relaxation and transport in single quantum wires (2001) (15)
- Pressure-induced Γ- X electron-transfer rates in a (GaAs ) 15 /(AlAs ) 5 superlattice (1991) (15)
- Transient and persistent photoconductivity in n-AlxGa1-xAs and selectively doped n-AlxGa1-xAs/GaAs heterostructures (1985) (15)
- An XPS Study of the Passivating Oxide Layer Produced on GaAs (001) Substrate by Heating in Air above 200°C (1988) (15)
- Dephasing of interacting heavy-hole and light-hole excitons in GaAs quantum wells (1996) (15)
- Relocation dynamics of domain boundaries in semiconductor superlattices (2002) (15)
- Hole spin polarization in GaAs:Mn/AlAs multiple quantum wells (2007) (14)
- Molecular beam epitaxial growth window for high-quality (Ga,In)(N,As) quantum wells for long wavelength emission (2006) (14)
- Carbon incorporation in GaAs and AlxGa1−xAs layers grown by molecular‐beam epitaxy (1993) (14)
- Observation of quantum-confined electron-hole droplets (1992) (14)
- Temperature dependence of the dielectric function and interband critical points of AlAs obtained on an MBE grown layer (1993) (14)
- Molecular‐beam epitaxially grown Si/GaAs interfaces: Delta‐doping, Si on GaAs, and GaAs on Si (1992) (14)
- PATTERNED GROWTH ON GAAS (311)A SUBSTRATES : ENGINEERING OF GROWTH SELECTIVITY FOR LATERAL SEMICONDUCTOR NANOSTRUCTURES (1999) (14)
- Photoluminescence of AlxGa1−xAs/GaAs quantum well heterostructures grown by molecular beam epitaxy (1984) (14)
- Critical parameters for the molecular beam epitaxial growth of 1.55μm (Ga,In)(N,As) multiple quantum wells (2006) (14)
- Magnetotransport investigations of a quantum dot with a small number of electrons (1993) (14)
- PHOTOLUMINESCENCE IN MODULATION-DOPED GAAS/GA1-XALXAS HETEROJUNCTIONS (1999) (14)
- New model for reflection high-energy electron diffraction intensity oscillations (1998) (14)
- New crucible made of Y2O3 for preparing yttrium based high Tc superconducting films by molecular beam epitaxy (1992) (14)
- Crystal optics elements in a coherent x-ray scattering experiment (2001) (14)
- The lattice sites of carbon in highly doped AlAs:C grown by molecular beam epitaxy (1993) (14)
- SELECTIVE CONTROL OF ELECTRONS IN QUANTUM WIRES FORMED BY HIGHLY UNIFORM MULTIATOMIC STEP ARRAYS ON GAAS(331) SUBSTRATES (1999) (14)
- Strain in buried quantum wires: Analytical calculations and x-ray diffraction study (2002) (14)
- Numerical simulation of fractal conductance fluctuations in soft-wall quantum cavities (2000) (14)
- Growth and properties of new artificial doping superlattices in GaAs (1982) (13)
- Growth and stability of rocksalt Zn1-xMgxO epilayers and ZnO/MgO superlattice on MgO (100) substrate by molecular beam epitaxy. (2016) (13)
- Initial stage of growth of in plasma-assisted molecular beam epitaxy (1996) (13)
- Influence of the Growth Mode on the Microstructure of Highly Mismatched InAs/GaAs Heterostructures (1994) (13)
- Slow relaxation of magnetization in MnAs nanomagnets on GaAs(001) (2006) (13)
- Spatial distribution of deep level defects in crack-free AlGaN grown on GaN with a high-temperature AlN interlayer (2006) (13)
- Time‐resolved near‐field optics: exciton transport in semiconductor nanostructures (1999) (13)
- Electronic properties of semiconductor quantum-wire structures directly grown on (311) surfaces (1992) (13)
- Fountain-pressure imaging of the dissipation in quantum-Hall experiments (1991) (13)
- Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy (2011) (13)
- Fabrication of MnAs microstructures on GaAs(001) substrates and their electrical properties (2006) (13)
- Strain relaxation in AlN/GaN bilayer films grown on γ-LiAlO2(100) for nanoelectromechanical systems (2004) (13)
- Epitaxial growth of rocksalt Zn1−xMgxO on MgO (100) substrate by molecular beam epitaxy (2017) (13)
- Effect of barrier configuration on excitonic recombination in Ga.47In.53As/Al.48In.52As multi quantum well structures (1986) (13)
- Real-time monitoring of the surface stoichiometry during molecular beam epitaxy of cubic GaN on (001) GaAs by RHEED (1996) (13)
- Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells (2008) (13)
- ENHANCEMENT OF ELECTRON-PHONON INTERACTION IN ULTRASHORT-PERIOD GAAS/AIAASSUPERLATTICES (1997) (13)
- Distinct growth behaviours in molecular-beam epitaxy of (In,Ga)As on GaAs(311)A substrate (2002) (13)
- In-situ spectroscopic ellipsometry and reflectance difference spectroscopy of GaAs(001) surface reconstructions (1996) (13)
- Barrier tuning by means of a quantum, interface‐induced dipole in a doping layer (1989) (13)
- Morphology transformations of GaAs high-index surfaces during the initial stages of strained-layer overgrowth (1993) (13)
- Magneto-optical studies of a silicon delta-doping layer in n-GaAs (1988) (13)
- Structural and magnetic properties of epitaxially grown MnAs films on GaAs(110) (2005) (13)
- Modulation of two‐dimensional conductivity in a molecular beam epitaxially grown GaAs bulk space‐charge system (1981) (13)
- Interface structure of (001) and (113)A GaAs/AlAs superlattices (1998) (13)
- Surface reconstructions of MnAs grown on GaAs(001) (2000) (13)
- Micromagnetic properties of MnAs(0001)∕GaAs(111) epitaxial films (2006) (13)
- Low‐temperature transport characteristics of AlGaAs‐GaAs in‐plane‐gated wires (1992) (13)
- Infrared reflectance and ellipsometric studies of GaAs/AlAs superlattices (1991) (13)
- Evolution of magnetic anisotropy and spin-reorientation transition in Fe films grown on GaAs(113)A substrates by molecular-beam epitaxy (2005) (13)
- Resonant Raman scattering in [111] GaAs/AlAs short-period superlattices (1991) (12)
- Carrier dynamics in (GaAs) m (AlAs) n superlattices (1989) (12)
- Long-wavelength strained-layer InAs/GaInAs single-quantum-well laser grown by molecular beam epitaxy on InP substrate (1993) (12)
- Virtual-surfactant mediated epitaxy of InAs on GaAs(001) studied by scanning tunneling microscopy (1996) (12)
- High intensity excitation luminescence of quantum wells in high magnetic fields (1990) (12)
- Spontaneous Hall effect in MBE grown Fe layers on GaAs(3 1 1) and GaAs(3 3 1) substrates (2001) (12)
- Hot carrier-phonon interaction in three- and two-dimensional Ga0.47In0.53As (1987) (12)
- Luminescence from hot electrons relaxing by LO phonon emission in p-GaAs and GaAs doping superlattices (1985) (12)
- SI AND BE INTRALAYERS AT GAAS/ALAS HETEROJUNCTIONS: DOPING EFFECTS (1998) (12)
- Effect of exciton localization on the quantum efficiency of GaN/(In, Ga)N multiple quantum wells (2002) (12)
- Reflection high-energy electron diffraction study of molecular beam epitaxy growth of Pr2O3 on Si(001) (2006) (12)
- Distribution of α and β phases in the coexistence regime in MnAs(0001) layers grown on GaAs(111)B (2004) (12)
- Kinetics of free and bound excitons in GaAs/AlGaAs double heterostructures (1984) (12)
- Optimization of the Contact Geometry for Accurate Quantized Hall Resistance Measurements (1989) (12)
- GaAs MOS structures with Al2O3 grown by molecular beam reaction (1979) (12)
- Darstellung eines rhomboedrischen Borcarbids der Zusammensetzung B13C2 (1973) (12)
- Modulation of the electronic properties of GaN films by surface acoustic waves (2003) (12)
- Photoluminescence intensity of GaN films with widely varying dislocation density (2003) (12)
- Thermal Collapse of the Fractional-Quantum-Hall-Effect Energy Gaps (1993) (12)
- The influence of temperature and incident light intensity on single particle and collective excitations in multilayer structures (1982) (12)
- Asymptotic x-ray scattering from highly mismatched epitaxial films (2006) (12)
- Lattice vibrations in a-boron? (1976) (12)
- Quenching of the spontaneous current oscillations in GaAs/AlAs superlattices under domain formation (1996) (12)
- Analysis of epitaxial GaxIn1−xAs/InP and AlyIn1−yAs/InP interface region by high resolution x‐ray diffraction (1993) (12)
- Photoluminescence of Al x Ga1?x As/GaAs quantum well heterostructures grown by molecular beam epitaxy: I. Luminescence of the constituent AlxGa1?xAs barrier and GaAs well material (1984) (12)
- Lattice distortion of MnAs nanocrystals embedded in GaAs: Effect on the magnetic properties (2005) (12)
- Quantum transport in GaAs doping superlattices (1983) (12)
- Edge state transport in high magnetic fields in a two-dimensional electron gas (1990) (12)
- Polarization selection rules for quantum beating between light- and heavy-hole excitons in GaAs quantum wells (1995) (12)
- Raman scattering verification of nonpersistent optical control of electron density in a heterojunction (1990) (12)
- Low temperature near‐field luminescence studies of localized and delocalized excitons in quantum wires (2001) (12)
- Intrinsic photoluminescence of M-plane GaN films on LiAlO2 substrates (2007) (12)
- Microstructure of epitaxial MnAs films on GaAs(001): An in situ x-ray study (2004) (12)
- Molecular Beam Epitaxy of Artificially Layered III-V Semiconductors: Ultrathin-Layer (GaAs)m (AlAs)m Superlattices and Delta (?-) Doping in GaAs (1987) (11)
- 2D and 1D electron transport in hybrid ferromagnet–semiconductor microstructures (2001) (11)
- Growth of c-plane ZnO on γ-LiAlO2 (1 0 0) substrate with a GaN buffer layer by plasma assisted molecular beam epitaxy (2015) (11)
- Optical properties of cubic GaN and (In, Ga)N (1998) (11)
- Magnetoelastic coupling of MnAs/GaAs(001) close to the phase transition (2004) (11)
- Transient photoconductivity in selectively doped n -type Al x Ga 1 − x As GaAs heterostructures (1984) (11)
- Phase diagram of static- and dynamic-domain formation in weakly coupled GaAs/AlAs superlattices (2000) (11)
- Cyclotron resonance of two-dimensional electron systems under the influence of ionized impurity-scattering (1990) (11)
- Structural characterization of lattice matched AlxIn1−xAs/InP and GayIn1−yAs/InP heterostructures by transmission electron microscopy and high‐resolution x‐ray diffraction (1995) (11)
- Epitaxial Heusler alloy Fe3SiFe3Si films on GaAs(0 0 1) substrates (2006) (11)
- Electric-Field-Enhanced Extrinsic Photoluminescence in AlGaAs-GaAs Single-Quantum Wells (1985) (11)
- IN SITU REFLECTANCE-DIFFERENCE SPECTROSCOPY OF GAAS GROWN AT LOW TEMPERATURES (1999) (11)
- A resistance ratio bridge based on a cryogenic current comparator for measuring the quantized Hall resistance (1989) (11)
- Atomic structure of the surface reconstructions of zincblende GaN(001) (1997) (11)
- Four-wave-mixing theory beyond the semiconductor Bloch equations (1995) (11)
- Nucleation, Relaxation and Redistribution of Si Layers in GaAs (1993) (11)
- Growth of M-plane GaN on γ-LiAlO2(100): the role of Ga adsorption/desorption (2004) (11)
- Conductance anisotropy of high-mobility, modulation-doped GaAs single quantum wells (2002) (11)
- Spikes in the Current Self‐Oscillations of Doped GaAs/AlAs Superlattices (1997) (11)
- Impact of exciton diffusion on the optical properties of thin GaN layers (1998) (11)
- Effect of barrier configuration on excitonic recombination in Ga0.47In0.53As/Al0.48In0.52As multi quantum well structures (1987) (11)
- Preparation and properties of a new GaAs sawtooth doping superlattice (1986) (11)
- Non-Ostwald coarsening of the GaAs(001) surface (2004) (11)
- A new semiconductor superlattice with tunable electronic properties and simultaneously with mobility enhancement of electrons and holes (1983) (11)
- Magnetic-field-controlled electron dynamics in quantum cavities (2000) (11)
- Abrupt changes in the temperature coefficient of resistivity induced by the phase transitions in MnAs films on GaAs (2007) (11)
- High performance Al0.48In0.52As/Ga0.47In0.53As HFETs (1990) (11)
- Deep-level defects in MBE-grown Ga(As,N) layers (2001) (11)
- Coarsening of facetted two-dimensional islands by dynamic coalescence (2006) (11)
- Direct measurement of critical exponents in the quantum Hall regime (1992) (11)
- Confined phonons in GaAs/AlAs superlattices with periodically corrugated interfaces (1992) (11)
- Hydrogen passivation of interface defects in GaAs/AlAs short‐period superlattices (1992) (11)
- Wannier–Stark localization in asymmetric double‐well superlattices (1996) (11)
- MAN-MADE LOW-DIMENSIONAL SOLIDS: NEW CHALLENGES IN MICROSTRUCTURE MATERIALS SCIENCE (1993) (11)
- Dependence of “Reststrahlen” bands in far-infrared reflectivity on configuration of GaAs/AlAs multiple quantum well heterostructures (1990) (11)
- Tunneling spectroscopy of Landau levels at the edge of a quantum Hall system (2000) (11)
- Effect of photoexcitation on the surface band bending in δ‐doped GaAs:Si/Al0.33Ga0.67As double heterostructures (1992) (10)
- Spectroscopic studies of real space indirect symmetric GaAs/AlAs short period superlattices (1990) (10)
- Quantum wires prepared by liquid‐phase‐epitaxial overgrowth of dry‐etched AlGaAs‐GaAs heterostructures (1992) (10)
- Stress evolution during ripening of self-assembled InAs∕GaAs quantum dots (2006) (10)
- Surface-Acoustic-Wave Delay Line at 24 GHz Using the Guided Rayleigh Mode in AlN/SiC Structures (2003) (10)
- Radiative recombination processes and fermi edge singularity in modulation doped n-type GaInAs/AlInAs multiple quantum wells (1990) (10)
- Surface structure of high- and low-index GaAs surfaces: direct formation of quantum-dot and quantum-wire structures (1993) (10)
- Magnetic anisotropy of Fe films on GaAs(113)A substrates (2005) (10)
- Magnetic anisotropy in Heusler alloy Fe3Si films on GaAs(1 1 3)A (2007) (10)
- Pressure studies of resonant DX centers: Thermal emission from metastable Si and S donors in GaAs (1990) (10)
- Overlayer strain: A key to directly tune the topography of high‐index semiconductor surfaces (1993) (10)
- Praseodymium silicide formation at the Pr2O3/Si interface (2008) (10)
- RECONSTRUCTION OF THE GAAS(001) SURFACE INDUCED BY SUBMONOLAYER SI DEPOSITION (1995) (10)
- Properties of (In,Ga)N/GaN quantum wells grown by plasma-assisted molecular beam epitaxy (2002) (10)
- Effect of barrier thickness on the luminescence properties of AlAs/GaAs multiple quantum wells grown by molecular beam epitaxy (1985) (10)
- Quantum transport of electrons confined in a thin GaAs layer by an impurity space charge potential in high magnetic fields (1983) (10)
- Growth of Cubic G A N on (001) G A AS (1995) (10)
- Interplay between Surface Stabilization, Growth Mode and Strain Relaxation during Molecular-Beam Epitaxy of Highly Mismatched III-V Semiconductor Layers (1994) (10)
- Epitaxial growth of nonpolar ZnO on MgO (1 0 0) substrate by molecular beam epitaxy (2013) (10)
- (In,Ga)As islands formed on shallow patterned GaAs (100) substrates by molecular beam epitaxy (2002) (10)
- Spin transport and manipulation by mobile potential dots in GaAs quantum wells (2006) (10)
- Formation of planar defects during the initial growth of M-plane GaN on LiAlO$_{2}$(100) (2006) (10)
- ELECTROLUMINESCENCE SPECTROSCOPY OF RESONANTLY COUPLED GAAS-ALAS SUPERLATTICES (1994) (10)
- Photoconductivity in selectively n- and p-doped AlxGa1−xAs/GaAs heterostructures (1986) (10)
- Excitonic properties of isolated nanometer‐sized InAs islands in a GaAs matrix (1995) (10)
- Investigation of the 2D-3D transition of the band gap renormalization in GaAs (1990) (10)
- Wigner Solid vs. Incompressible Laughlin Liquid: Phase Diagram Derived from Time-Resolved Photoluminescence (1993) (10)
- New long‐wavelength photodetector based on reverse‐biased doping superlattices (1984) (10)
- Virtual-surfactant-induced wetting in strained-layer heteroepitaxy (1993) (10)
- X-ray diffraction peaks at glancing incidence and glancing exit from highly mismatched epitaxial layers (2006) (10)
- Controllable step bunching induced by Si deposition on the vicinal GaAs(001) surface (2000) (10)
- Impact of N-induced potential fluctuations on the electron transport in Ga(As,N) (2005) (10)
- Resonance Raman scattering by intrasubband excitations of GaAs multi-quantum well structures (1986) (10)
- Epitaxial ferromagnet-semiconductor heterostructures for electrical spin injection (2003) (10)
- Electron coupling in weakly and strongly coupled quantum point contacts (2001) (10)
- Resonant Raman scattering and photoluminescence at the E0 band gap of carbon‐doped AlAs (1993) (10)
- Zur bildung der tetragonalen modifikation des bors (1968) (10)
- Island and pit kinetics on the growing GaAs (001) surface studied by synchrotron X-ray diffraction (2003) (10)
- Composition dependent properties of Fe3Si films grown on GaAs(113)A substrates (2009) (10)
- Strained islands as step bunches: shape and growth kinetics (2001) (10)
- A novel technique for degenerate p-type doping of germanium (2013) (10)
- Investigation of magnetically coupled ferromagnetic stripe arrays (2006) (10)
- High electron mobility in modulation-doped GaxIn1-xAs/AlyIn1-yAs heterostructures with highly strained AlInAs grown by molecular beam epitaxy (1990) (10)
- Influence of ohmic contacts on the amplitude of Shubnikov-de Haas oscillations (1992) (10)
- Influence of the interface corrugation on the subband dispersions and the optical properties of (113)-oriented GaAs/AlAs superlattices (1996) (10)
- Role of broken translational invariance for the optical response of excitons in low-dimensional semiconductors (1992) (10)
- Epitaxial growth of nonpolar and polar ZnO on γ-LiAlO2 (100) substrate by plasma-assisted molecular beam epitaxy (2013) (10)
- MBE growth and characteristics of cubic GaN (1997) (9)
- Screening of the n=2 excitonic resonance by hot carriers in an undoped Ga0.47In0.53As/Al0.48In0.52As multiple quantum well structure (1989) (9)
- In situ investigation of MnAs/GaAs(001) growth and interface structure using synchrotron x-ray diffraction (2004) (9)
- INFLUENCE OF HIGHER HARMONICS ON POINCARE MAPS DERIVED FROM CURRENT SELF-OSCILLATIONS IN A SEMICONDUCTOR SUPERLATTICE (1998) (9)
- Exchange splitting of the heavy hole exciton ground state in GaAs-GaAlAs quantum wells (1990) (9)
- Patterned growth on GaAs (311)A substrates: Dependence on mesa misalignment and sidewall slope and its application to coupled wire-dot arrays (1999) (9)
- The influence of imperfections and weak disorder on domain formation in superlattices (1996) (9)
- One-dimensional electronic systems in ultra-fine mesa etched InGaAs-InAlAs-InP quantum wires (1990) (9)
- Magnetologic with α-MnAs thin films (2003) (9)
- Capacitance spectroscopy of the fractional quantum Hall effect: temperature dependence of the energy gap (1998) (9)
- Extremely narrow luminescence linewidth in GaAs single quantum wells by insertion of thin AlAs smoothing layers (1991) (9)
- Observation of stimulated emission in an ultrashort-period nonsymmetric GaAs/AlAs superlattice (2001) (9)
- Stress development during annealing of self-assembled InAs/GaAs quantum dots measured in situ with a cantilever beam setup (2006) (9)
- Structural and optical properties of strained (Ga,In)Sb/GaSb quantum wells grown by molecular‐beam epitaxy (1996) (9)
- Temperature-dependent luminescence of GaAs doping superlattices (1986) (9)
- Near‐field Optical Spectroscopy of Single GaAs Quantum Wires (1997) (9)
- Epitaxial pulsed laser crystallization of amorphous germanium on GaAs (2001) (9)
- The diffuse X-ray scattering in real periodical superlattices (1992) (9)
- Collective effects in optical spectra of high-density–high-mobility two-dimensional electron gases (1999) (9)
- Hole spin polarization in the exchange field of the dilute magnetic (Ga,Mn)As semiconductor studied by means of polarized hot-electron photoluminescence spectroscopy (2009) (9)
- Growth, interface structure and magnetic properties of Heusler alloy Co2FeSi/GaAs(0 0 1) hybrid structures (2007) (9)
- Layer-by-layer growth of thin epitaxial Fe3Si films on GaAs (001) (2007) (9)
- Near Field Optical Spectroscopy of Confined Excitons (2000) (9)
- Thickness dependent roughening of Ga(As,N)/GaAs MQW structures with high nitrogen content (2003) (9)
- Wigner solid versus incompressible Fermi liquid: phase diagram derived from time-resolved photoluminescence (1993) (9)
- Optically detected oscillations of screening by a two-dimensional electron gas in a magnetic field (1997) (9)
- Low temperature breakdown and current filamentation in n-type GaAs with homogeneous and partially ordered Si doping (1995) (9)
- Competition between transport and recombination in photocurrent spectra of semiconductor superlattices (1992) (9)
- Vertical transport of photo-excited carriers for excitonic recombinations in modulation doped heterojunctions (1998) (9)
- Magnetotransport properties of hall-bar with focused-ion-beam written in-plane-gate (1993) (9)
- Far-infrared spectroscopy of one- and zero-dimensional electronic systems (1991) (9)
- Electronic Excitations in Laterally Microstructured AlGaAs-GaAs Heterojunctions (1987) (9)
- Impact of In Bulk and Surface Segregation on the Optical Properties of (In,Ga)N/GaN Multiple Quantum Wells (2002) (9)
- Stable nonplanar surface formed on patterned GaAs (311)A substrate by molecular-beam epitaxy (2000) (9)
- Two stages of post-growth recovery in molecular beam epitaxy: a surface X-ray diffraction study (2004) (9)
- Side-by-side existence of the quantum Hall effect and the magnetic-field-induced metal-insulator transition (1988) (9)
- Enhanced and quenched Raman scattering by interface phonons in semiconductor superlattices: What are the defects? (1988) (8)
- Initial stages of MnAs/GaAs(0 0 1) epitaxy studied by RHEED azimuthal scans (2006) (8)
- Rabi oscillations of intersubband transitions in GaAs/AlGaAs MQWs (2004) (8)
- Si doping for n- and p-type conduction in AlxGa1−x As grown on GaAs(311)A by molecular-beam epitaxy (2003) (8)
- Time resolved luminescence in n-i-p-i doping superlattices (1983) (8)
- Highly anisotropic dispersion of surface acoustic waves in M-plane GaN layers grown onγ−LiAlO2(100) (2004) (8)
- Enhanced electron correlations, local moments, and Curie temperature in strained MnAs nanocrystals embedded in GaAs (2010) (8)
- Self-consistent energy levels in low-dimensionally delta -doped structures (1995) (8)
- Γ-X transfer rates in type II (Al)GaAs / AlAs superlattices (1989) (8)
- Paramagnetic and ferromagnetic resonance studies on dilute magnetic semiconductors based on GaN (2008) (8)
- Subpicosecond electric field dynamics in low-temperature-grown GaAs observed by reflective electro-optic sampling (1993) (8)
- DC and far-infrared experiments on one-dimensional multi-layered quantum wires (1989) (8)
- Strukturchemische Charakterisierung eines durch Gasphasenabscheidung darstellbaren orthorhombischen Borcarbids der Zusammensetzung B8C (1974) (8)
- Enhanced spin coherence via mesoscopic confinement during acoustically induced transport (2008) (8)
- Electrical spin injection from Fe into GaAs at room temperature (2002) (8)
- Optical properties of InAs quantum wells emitting between 0.9 mu m and 2.5 mu m (1993) (8)
- Nucleation, coarsening and kinetic scaling of two-dimensional islands on GaSb(0 0 1) (2007) (8)
- Magnetic anisotropy and resonance linewidth of Fe3Si/GaAs(001) (2006) (8)
- Nature of the band gap (direct versus indirect) of short‐period (GaAs)n/(AlAs)n superlattices grown along the [111] confinement direction (1990) (8)
- Comment on Struktur des tetragonalen (B12)4B2Ti1.3−2.0, by E. Amberger and K. Polborn (1976) (8)
- Gate-voltage-dependent transport measurements on heterostructure field-effect transistors (1986) (8)
- Two-dimensional coarsening kinetics of reconstruction domains: GaAs(001)-beta(2 x 4). (2003) (8)
- Magnetophonon resonance in high density, high mobility quantum well systems (2004) (8)
- Rock-salt Zn1−xMgxO epilayer having high Zn content grown on MgO (100) substrate by plasma-assisted molecular beam epitaxy (2013) (8)
- Mismatch strain as a driving force for the annealing-induced formation of In–N bonds in (In,Ga)(As,N) (2005) (8)
- Si intralayers at GaAs/AlAs and GaAs/GaAs junctions: Polar versus nonpolar interfaces (1998) (8)
- Recent progress in nanostructure fabrication using MBE (2007) (8)
- Coherent nonlinear dynamics of intersubband excitations in a two-dimensional electron gas (2002) (8)
- High pressure study of Γ-X mixing in InAs/GaAs quantum dots (1995) (8)
- Molecular beam epitaxy of semiconductor interfaces and quantum wells for advanced optoelectronic devices (1988) (8)
- Free versus localized hole magnetophotoluminescence in semiconductor heterojunctions near integer filling factors (2004) (8)
- Magnetic correlations in the paramagnetic phases of MnAs (2003) (8)
- Crystal Chemical Relations Between the Nonmetal Borides B 48 B 2 C 2 and B 48 B 2 N 2 and the Hypothetical “l‐Tetragonal Boron” (1974) (8)
- Growth mode-related generation of electron traps at the inverted AlAs/GaAs interface (1998) (8)
- In situ grazing incidence x-ray diffraction study of strain evolution during growth and postgrowth annealing of MnAs on GaAs(113)A (2005) (8)
- Evolution of Si-on-GaAs (001) surface morphology towards self-organized ordered Si structures (2000) (8)
- Composition fluctuations in dilute nitride (Ga,In)(N,As)/GaAs heterostructures measured by low-loss electron energy-loss spectroscopy. (2006) (8)
- Growth of AL2O3 Layer on MBE GaAs (1978) (8)
- Spin polarization of an optically pumped electron gas (1999) (8)
- Conductive and crack-free AlN/GaN:Si distributed Bragg reflectors grown on 6H-SiC(0001) (2005) (8)
- Strain relief process at highly strained semiconductor heterointerfaces studied by high-resolution X-ray diffraction (1992) (8)
- Time-resolved photoluminescence investigations of cubic GaN layers and crystals up to room temperature (1997) (8)
- Direct synthesis of InAs quantum dots in single-crystalline GaAs matrix by molecular beam epitaxy (1992) (8)
- Cathodoluminescence study of GaN-based film structures (2008) (8)
- Interband magnetooptical experiments in GaAlAs-GaAs quantum (1984) (8)
- Exciton capture and losses in a stacked submicron array of sidewall quantum wires on patterned GaAs ( 311 ) A substrates (1999) (8)
- Influence of the dielectric environment on the radiative lifetime of quantum-well excitons (2000) (8)
- The influence of subband structure on the thermoelectric power of GaAsAlxGa1−xAs - heterojunctions (1989) (8)
- Magneto-optics in modulation-doped quantum wells (1987) (8)
- Solving the phase problem in surface crystallography: Indirect excitation via a bulk reflection (2000) (8)
- Filling factor dependent Landau level broadening studied with inter- and intraband magneto-optics in GaInAs/AlInAs MDQWs (1992) (8)
- Intersubband Relaxation Rates of a Two-Dimensional Electron Gas under High Magnetic Fields (1998) (8)
- Strain field and chemical composition determination of InGaN/GaN and AlGaN/GaN multiple quantum wells grown on SiC substrates (2002) (8)
- A local vibrational mode investigation of p‐type Si‐doped GaAs (1994) (8)
- X‐ray diffraction peaks from misfit dislocations in double‐ and triple‐crystal diffractometry (2007) (8)
- Comparison between the compressibilities of the zero field and composite-fermion metallic states of the two-dimensional electron system (2001) (8)
- Direct comparison of the pressure-induced band-gap shifts in cubic and hexagonal GaN (1998) (7)
- Effect of spatial localisation of dopant atoms on the confining potential and electron subband structure in δ-doped GaAs:Si (1992) (7)
- Hot carrier thermalization in GaAs/AlAs superlattices (1989) (7)
- Correlation between optical and structural properties of (Al,Ga)N layers grown by MOCVD (2007) (7)
- Room‐temperature enhancement of electro‐optical modulation by resonance‐induced exciton mixing in a GaAs/AlAs superlattice (1991) (7)
- Strained InAs/Ga0.47In0.53As quantum-well heterostructures grown by molecular-beam epitaxy for long-wavelength laser applications (1994) (7)
- Lateral piezoelectric fields—a universal feature of strained III–V and II–VI semiconductor heterostructures (1994) (7)
- Improved synthesis of (In,Ga)N/GaN multiple quantum wells by plasma-assisted molecular-beam epitaxy (2003) (7)
- Different As desorption behaviour at step edges on InAs(001) and GaAs(001) surfaces (1997) (7)
- Stress evolution during growth of bilayer self-assembled InAs/GaAs quantum dots (2006) (7)
- Ga(As,N) layers in the dilute N limit studied by depth-resolved capacitance spectroscopy (2002) (7)
- Flipping of magnetic moments induced by the first-order phase transition in MnAs disks on GaAs(001) (2006) (7)
- Intrinsic contributions to the planar Hall effect in Fe and Fe3Si films on GaAs substrates (2006) (7)
- Excitonic transitions and optically excited transport in GaAsAlxGa1−xAs quantum wells in an electric field (1987) (7)
- Spin injection from Fe 3 Si into GaAs (2004) (7)
- Uniform quantum wire and quantum dot arrays by atomic hydrogen assisted MBE on patterned high-index substrates: role of atomic hydrogen in natural self-faceting (1999) (7)
- Spatial distribution of electric‐field domains in n‐doped semiconductor superlattices (1995) (7)
- PATTERNING OF CUBIC AND HEXAGONAL GAN BY CL2/N2-BASED REACTIVE ION ETCHING (1999) (7)
- Key issues for the growth of high quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0 0 0 1) by molecular beam epitaxy (2001) (7)
- Polarization properties of nonpolar GaN films and (In,Ga)N/GaN multiple quantum wells (2004) (7)
- Variable-temperature micromagnetic study of epitaxially grown MnAs films on GaAs(001) (2003) (7)
- Evolution of short- and long-range order during Si incorporation on GaAs(0 0 1) observed by RAS and RHEED during MBE (1997) (7)
- TEM study of (Ga,Al)N nanocolumns and embedded GaN nanodiscs (2018) (7)
- Hydrostatic pressure studies of an asymmetrically doped resonant tunneling diode (1991) (7)
- Radiative coupling of intersubband transitions in GaAs/AlGaAs multiple quantum wells (2006) (7)
- Structural properties and transport characteristics of pseudomorphic GaxIn1−xAs/AlyIn1−yAs modulation‐doped heterostructures grown by molecular‐beam epitaxy (1992) (7)
- Improved model for the determination of strain fields and chemical composition of semiconductor heterostructures by high-resolution X-ray diffractometry (1996) (7)
- In Situ Controlled Growth of Low-Temperature GaAs and Its Application for Mode-Locking Devices (2000) (7)
- Light scattering determination of subband structure and population of modulation‐doped multiple quantum wells (1990) (7)
- Photoelectron emission from heterojunctions with intralayers: band-offset changes vs. band-bending effects (2002) (7)
- Excitonic and free-carrier quantum beats created by femtosecond excitation at the band edge of GaAs (1998) (7)
- Tailoring of Si doping layers in GaAs during molecular beam epitaxy (1996) (7)
- Carrier spin polarization in digital Mn/GaAs ferromagnetic structures studied with hot electron photoluminescence (2008) (7)
- Interface electronic transition observed by optical second-harmonic spectroscopy in β − G a N / G a A s ( 001 ) heterostructures (1998) (7)
- Synchrotron x-ray scattering study of thin epitaxial Pr2O3 films on Si(001) (2006) (7)
- Magnetooptics of two-dimensional electrons under the conditions of integral and fractional quantum hall effect in Si-MOSFETs and GaAs-AlGaAs single heterojunctions (1988) (7)
- Response to ''Comment on 'Shallow donors in GaN studied by electronic Raman scattering in resonance with yellow luminescence transitions' '' (Appl. Phys. Lett. 70, 909 (1997)) (1997) (7)
- Patterned growth on GaAs (3 1 1)A substrates (1997) (7)
- Strain relaxation, defects and cathodoluminescence of m-plane ZnO and Zn0.8Mg0.2O epilayers grown on γ-LiAlO2 substrate (2013) (7)
- Si and Be intralayers at GaAs/AlAs and GaAs/GaAs junctions: Low-temperature photoemission measurements (2000) (7)
- Tunability of bipolar conductivity in GaAs doping superlattices (1984) (6)
- Dynamical Stokes shift due to interface nanoroughness in growth islands of GaAs single quantum wells (1997) (6)
- M -plane GaN-based dichroic photodetectors (2007) (6)
- Influence of photo-modulation of reflectance of hetero NIPI superlattices (1987) (6)
- Lateral variation of quantum-well confinement energy in triangular-shaped dot-like structures grown by molecular beam epitaxy on patterned GaAs (311)A substrates (1998) (6)
- Morphology of GaN Surfaces and GaN/(Al,Ga)N Interfaces Grown on 6H‐SiC(0001) by Reactive Molecular Beam Epitaxy (2000) (6)
- Anisotropic strain fields in granular GaAs:MnAs epitaxial layers: Towards self-assembly of magnetic nanoparticles embedded in GaAs (2005) (6)
- Electric-field domains in superlattices: A comparison of transport and optical generation (1992) (6)
- Weak localization effects in GaAs doping superlattices (1984) (6)
- Surface and interface ordering on non-(100)-oriented GaAs substrates (1992) (6)
- Thermally activated dissipative conductivity in the fractional quantum Hall effect regime (1996) (6)
- Kinematical RHEED simulation of different structure models for the GaAs (311)A surface (1996) (6)
- Effect of Excitons in AlGaAs/GaAs Superlattice Solar Cells (2011) (6)
- Orientation and interface effects on the structural and magnetic properties of MnAs-on-GaAs hybrid structures (2006) (6)
- Hybrid optical modulator based on surface acoustic waves fabricated using imprint lithography and the epitaxial lift-off technique (2003) (6)
- InAs monolayers and quantum dots in a crystalline GaAs matrix (1993) (6)
- Atomic configurations during Si incorporation on GaAs(001) in As atmosphere evidenced by reflectance difference spectroscopy (1997) (6)
- Narrow luminescence linewidth in GaAs single quantum wells by insertion of thin AlAs smoothing layers (1991) (6)
- Raman scattering from vibrational modes in metalorganic molecular beam epitaxy grown carbon doped InP: spectroscopic search for the carbon donor (1995) (6)
- Interplay of elastic and magnetic properties in MnAs/GaAs heterostructures (2004) (6)
- Velocity modulation in focused‐ion‐beam written in‐plane‐gate transistors (1993) (6)
- Hot Electron Magnetotransport in AlxGa1−xAs-GaAs Samples of Different Geometry (1989) (6)
- Structural properties of GaN epilayers directly grown on on-axis 6H-SiC(0 0 0 1) by plasma-assisted MBE (1999) (6)
- X‐ray absorption near edge spectroscopy at the Mn K‐edge in highly homogeneous GaMnN diluted magnetic semiconductors (2006) (6)
- Exciton luminescence of single-crystal GaN (1995) (6)
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- Plasma-assisted molecular beam epitaxial growth and characterization of zincblende (In,Al,Ga)N heterostructures on GaAs(001) (1998) (0)
- Growth and doping of /spl beta/-GaN and /spl beta/-(In,Ga)N films and heterostructures (1998) (0)
- Magnetic anisotropy and structural properties of ultrathin epitaxial Fe films on GaAs(001) and GaAs(113)A substrates (2003) (0)
- Coherent dynamics of resonantly excited quantum-well excitons (1995) (0)
- Ferromagnetic semiconductors with high Curie temperature and unusual magnetic properties – the case of Gd-doped GaN (2008) (0)
- ASYMMETRIC SHUBNIKOV-DE HAAS OSCILLATIONS AND HALL PLATEAUS OF HETEROJUNCTIONS IN THE QUANTUM HALL REGIME (1987) (0)
- Terahertz field induced midinfrared gain and absorption in n-type GaAs (2007) (0)
- Three-Dimensionally Confined Nanostructures Grown by MBE on Square-and Triangular-Hole Patterned GaAs (311)A Substrates (1998) (0)
- Method for fabrication of active semiconductor structures using basic structures with surface-parallel 2D-charge carrier layer (1990) (0)
- A light-emitting component-out connection-semiconductor (1988) (0)
- Connection Between Low and High Temperature Magneto-transport Measurements in GaAs/GaAlAs Heterojunctions (1989) (0)
- United States Patent ( 19 ) Ploog et al . ( 54 ) SEMICONDUCTOR DEVICE FOR DETECTING ELECTROMAGNETIC RADATION OR PARTICLES (2017) (0)
- Einfluß von Fremdatomen auf Bildung und Struktur von Bormodifikationen und borreichen Boriden (1969) (0)
- Erratum: High electron mobility in modulation-doped GaxIn 1-xAs/AIyIn1-xAs heterostructures with highly strained AlInAs grown by molecular beam epitaxy (Semiconductor Science and Technology (1990) 5 (590-595)) (1990) (0)
- Verfahren zur Erzeugung von aktiven Halbleiterstrukturen mittels Ausgangsstrukturen mit einer oberflächenparallelen 2D-Ladungsträgerschicht (1990) (0)
- Picosecond step-function response of in-plane gate transistor (1995) (0)
- Erratum: Enhanced electron correlations, local moments, and Curie temperature in strained MnAs nanocrystals embedded in GaAs [Phys. Rev. B 82 , 045117 (2010)] (2011) (0)
- Transient intersubband absorption spectra of hot electrons in a modulation doped Ge 0.47 In 0.53 As/Al 0.48 In 0.52 As MQW structure (1990) (0)
- Magneto-Capacitance in Two-Dimensional Electronic Systems in AlxGa1−xAs/GaAs Heterostructures Under the Influence of Ionized Impurities (1992) (0)
- Scaling Behaviour of Doped AlGaAs/GaAs Heterostructures in the Quantum Hall Regime (1992) (0)
- Electric field-induced delocalization effects in GaAs/AlAs single- and double-period superlattices (1992) (0)
- Contribution of reflection high-energy electron diffraction to nanometre tailoring of surfaces and interfaces by molecular beam epitaxy (1994) (0)
- Near-field spectroscopy of single semiconductor nanostructures (1998) (0)
- Fine Structure of Excitons in Quantum Wires (2003) (0)
- Near-resonance Raman scattering of longitudinal optical phonon modes and interface modes in GaAs/AlAs superlattices (1992) (0)
- Coherent vs. Incoherent Emission in Quantum Wells studied by Polarisation- and Time-Resolved Spectroscopy (2001) (0)
- Mechanism of Γ-X Electron Transfer in Type II (Al)GaAs/AlAs Superlattices and Multiple Quantum well Structures (1991) (0)
- Electronic signature of MnAs phases in bare and buried films grown on GaAs(001) (2008) (0)
- Ultrafast pump-probe signals at the band edge of bulk GaAs: Excitonic versus free carrier contributions (1998) (0)
- Molecular Beam Epitaxial Growth and Properties of Layered Semiconductor Structures for Advanced Photonic and Electronic Devices (1988) (0)
- 25p-YE-1 Highly uniform GaAs quantum wire and quantum dot arrays grown on patterned high-index substrates by hydrogen-assisted MBE (1998) (0)
- Interface structure and epitaxial growth of M-plane GaN(11̅00) on tetragonal LiA1O2(100) substrates (2018) (0)
- Ultrafast Coherent Dynamics of Radiatively Coupled Excitons in Multiple Quantum Wells (1999) (0)
- Electro-optic imaging of potential distributions in the quantum Hall regime (1995) (0)
- III-V Quantum System Research [Book Review] (1996) (0)
- Anisotropic strain relaxation and growth mode dependence in highly lattice mismatched III-V systems (2017) (0)
- Energies of strained surfaces and barrierless formation of strained islands. (2003) (0)
- Molecular beam epitaxy of Pr/sub 2/O/sub 3/on Si (2005) (0)
- Laterally Ordered Incorporation of Impurity Atoms on Vicinal GaAs(001) Surfaces (1995) (0)
- Subject Categories and References Year 1978 (1984) (0)
- Concentration dependent mobility of two-dimensional electron gas in GaAs/AlGaAs heterostructure (1991) (0)
- Dynamics and spectral characteristics of exciton bleaching in type-II AlxGa1−xAs/AlAs superlattices (1991) (0)
- Nucleation at the first order phase transition in MnAs nanodisks (2006) (0)
- Heterostructure halbleiterkoerper and use here for (1979) (0)
- Piezoactive (110)- and (h11)-InAs/GaAs heterostructures for nonlinear optical applications (1994) (0)
- Strain effects during coherent spin transport via moving quantum dots (2006) (0)
- Ultrafast coherent dynamics of impulsively excited inter-valence band polarizations in bulk GaAs (1998) (0)
- Der Quantentrog‐Pockels‐Effekt (1993) (0)
- Ultrafast Heavy-Light Hole Quantum Beats of Free Carriers in GaAs Observed in Pump-Probe Experiments with 20 Femtosecond Pulses (1996) (0)
- Comment on "Identification of different electron screening behavior between the bulk and surface of (Ga,Mn)As [Phys. Rev. Lett. 107, 187203 (2011)]" (2012) (0)
- Contributions of Bound and Unbound Two-Exciton States to the Nonlinear Optical Response of GaAs Quantum Wells (1994) (0)
- Huge Photoresponse in the Non-Local Transport Regime (1993) (0)
- Subject Categories and References Year 1981 (1984) (0)
- Excitonic Transitions in Photoluminescence and Reflectivity of GaAs/AlxGa1-xAs Superlattices (1988) (0)
- Many-body phenomena in type-II quantum-well and quantum-well-wire superlattices (1994) (0)
- Determination of the Coulomb gaps under the conditions of fractional quantum Hall effect by the magnetoluminescence method (1991) (0)
- Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate (1998) (0)
- Epitaxial Growth of Atomically Smooth GaAs/AlxGa1-xAs Interfaces for Resonant Tunneling (1991) (0)
- In situ studies of semiconductor growth by synchrotron X-ray diffraction (2006) (0)
- Phase study of oscillatory resistances in high mobility GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect (2006) (0)
- Transient-grating experiments for the study of electron-hole separation in an electric field (1992) (0)
- High electron mobility in modulation-doped GaxIn1-xAs/AIyIn1-xAs heterostructures with highly strained AlInAs grown by molecular beam epitaxy (1990) (0)
- Determination of the Hole Effective Magnetic Moment in Quantum Wells in a Parallel Magnetic Field (1992) (0)
- Luminescence and Transport Properties of GaAs Sawtooth Doping Superlattices (1986) (0)
- Growth of [211]-oriented InAs/GaAs heterostructures (1993) (0)
- CARBON-INDUCED LATTICES OF BORON. I. Tetragonal (B$sub 12$)$sub 4$B$sub 2$C AND (B$sub 12$)$sub 4$B$sub 2$C . (1971) (0)
- Application of the polarized photoluminescence method to the characterization of superlattice corrugations (1995) (0)
- Near-field Photoluminescence Spectroscopy Of A Single Gaas Quantum Wire (1997) (0)
- Observation of Very Efficient Cold Exciton Emission due to the First Excited Subband State in GaAs/AlxGa1−xAs Quantum Wells (2007) (0)
- Growth, interface structure, and magnetic properties of Fe/GaAs and Fe 3 Si/GaAs hybrid (2006) (0)
- Near-field spectroscopy of delocalized excitons in single quantum wires (2001) (0)
- Tunneling-induced conductance oscillation in a point contact weakly coupled to an Aharonov–Bohm resonator (1999) (0)
- A resonant Raman study on phonons in GaInAs/AlInAs multiple quantum wells (1995) (0)
- Ultrafast coherent nonlinear dynamics of intersubband excitations in a quasi-two-dimensional electron gas (2002) (0)
- Impurity Breakdown and Current Filamentation in MBE Grown GaAs with Parallel Monolayer Doping (1992) (0)
- Correlation Between Structural and Optical Properties OF GaAs-on-Si Grown by Molecular Beam Epitaxy (1989) (0)
- by Plasma-Assisted Molecular Beam Epitaxy (2003) (0)
- Photoreflectance Study of a Fibonacci Superlattice (1995) (0)
- Identification of electron-hole transitions in short-period GaAs/AlAs superlattices by time-resolved photoluminescence (1998) (0)
- From Quantum Well Exciton Polaritons to One-Dimensional Excitons (1991) (0)
- Tunneling time of electrons in modulation n- doped GaAlAsGaAsAlAs quantum wells (1991) (0)
- Cathodoluminescence investigations of vertically stacked, sub-μm arrays of sidewall quantum wires on patterned GaAs (311)A substrates (1999) (0)
- Natural Patterning of High-Index Gaas Surfaces (1993) (0)
- Thermally activated electron conductivity in Ga(As,N) with N‐induced potential fluctuations (2006) (0)
- Comparative study of the spontaneous and stimulated emission of M- and C-plane GaN/(Al,Ga)N quantum wells (2001) (0)
- Interband magneto-optical experiments in Ga1-xAlxAs-GaAs quantum wells (1984) (0)
- Γ-X Intervalley Electron Transfer Rates in Type-II AlxGal-xAs/AlAs Superlattices (1990) (0)
- Coherent effects in resonant quantum well optical emission (1999) (0)
- Temperature-dependent near-field imaging of delocalized and localized excitons in single quantum wires (2001) (0)
- High performance Al(0.48)In(0.52)As/Ga(0.47)In(0.53)As HFETs (1990) (0)
- Exciton localization in ultradilute Ga(As,N) investigated by means of near-field autocorrelation spectroscopy (2005) (0)
- eld driven breakdown of the dissipationless state in the integer and fractional quantum Hall eect (2016) (0)
- Photon Echo Polarisation Rules in GaAs Quantum Wells (1993) (0)
- Saturation of the free-electron concentration in delta -doped GaAs: the DX centre in two dimensions (1988) (0)
- Subject Categories and References Year 1975 (1984) (0)
- Studies of electronic structures of GaAs/AlAs superlattices by photoluminescence under hydrostatic pressure (1990) (0)
- DETERMINATION OF BINDING ENERGIES AND WAVE FUNCTIONS IN QUANTUM WELLS FROM RAMAN RESONANCE CROSS SECTION MEASUREMENTS (1987) (0)
- Variable range hopping transport in the tails of the conductivity peaks between quantum Hall plateaus (1995) (0)
- Structural Characterization of Ga0.47In0.53As/Al0.48In0.52As Superlattices Grown by Molecular Beam Epitaxy (1986) (0)
- High pressure studies of electron mobility in heavily doped GaAs: fitting of the absolute value (1991) (0)
- Low temperature breakdown and current filamentation in n-type GaAs with homogeneous and partially ordered Si doping (1995) (0)
- Trapped phonons in the reflection spectra of GaAs/AlGaAs superlattices (1990) (0)
- Coherent coupling of exciton transitions in semiconductor quantum structures (1993) (0)
- Near-field imaging and spectroscopy of localized and delocalized excitons in semiconductor nanostructures (2001) (0)
- Exciton Radiative Lifetimes in GaAs Quantum Wells (1993) (0)
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What Schools Are Affiliated With Klaus H. Ploog?
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