Klaus Wittmaack

Klaus Wittmaack's AcademicInfluence.com Rankings

Klaus Wittmaack

Physics

#4717

World Rank

#6435

Historical Rank

physics Degrees

Download Badge

Physics

Klaus Wittmaack's Degrees

PhD Atmospheric Science University of Hamburg
Masters Physics University of Hamburg
Bachelors Physics University of Hamburg

Why Is Klaus Wittmaack Influential?

(Suggest an Edit or Addition)

(See a Problem?)

Klaus Wittmaack's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Sputtering by Particle Bombardment III (1981) (2207)
In Search of the Most Relevant Parameter for Quantifying Lung Inflammatory Response to Nanoparticle Exposure: Particle Number, Surface Area, or What? (2006) (275)
Model calculation of ion collection in the presence of sputtering (1976) (160)
Elemental composition and sources of fine and ultrafine ambient particles in Erfurt, Germany. (2003) (151)
Beam-induced broadening effects in sputter depth profiling (1984) (147)
Oxygen-concentration dependence of secondary ion yield enhancement (1981) (121)
Secondary ion mass spectrometry as a means of surface analysis (1979) (101)
Effect of surface roughening on secondary ion yields and erosion rates of silicon subject to oblique oxygen bombardment (1990) (93)
Implications in the use of secondary ion mass spectrometry to investigate impurity concentration profiles in solids (1973) (93)
Energy and fluence dependence of the sputtering yield of silicon bombarded with argon and xenon (1979) (92)
An overview on bioaerosols viewed by scanning electron microscopy. (2005) (88)
An AES-SIMS study of silicon oxidation induced by ion or electron bombardment (1980) (88)
ASPECTS OF QUANTITATIVE SECONDARY ION MASS SPECTROMETRY (1980) (80)
Energy dependence of the secondary ion yield of metals and semiconductors (1975) (80)
Secondary ion emission from silicon and silicon oxide (1975) (79)
Profile distortions and atomic mixing in SIMS analysis using oxygen primary ions (1981) (79)
Design and performance of quadrupole-based SIMS instruments: a critical review (1982) (79)
On the mechanism of cluster emission in sputtering (1979) (68)
Raster scanning depth profiling of layer structures (1977) (66)
Reliability of a popular simulation code for predicting sputtering yields of solids and ranges of low-energy ions (2004) (64)
Dynamic range of 106 in depth profiling using secondary‐ion mass spectrometry (1980) (61)
Analytical description of the sputtering yields of silicon bombarded with normally incident ions (2003) (60)
Primary‐ion charge compensation in SIMS analysis of insulators (1979) (58)
A low background secondary ion mass spectrometer with quadrupole analyser (1973) (58)
High‐sensitivity depth profiling of arsenic and phosphorus in silicon by means of SIMS (1976) (57)
Excessive delivery of nanostructured matter to submersed cells caused by rapid gravitational settling. (2011) (57)
Secondary-ion emission from silicon bombarded with atomic and molecular noble-gas ions (1979) (57)
Sources of error in quantitative depth profiling of shallow doping distributions by secondary-ion-mass spectrometry in combination with oxygen flooding (1998) (54)
Characteristics of ion-excited silicon L-shell Auger spectra (1979) (54)
Basic requirements for quantitative SIMS analysis using cesium bombardment and detection of MCs+ secondary ions (1992) (53)
Sputtering Yield Changes, Surface Movement and Apparent Profile Shifts in SIMS Depth Analyses of Silicon Using Oxygen Primary Ions (1996) (51)
Ion-induced electron emission as a means of studying energy- and angle-dependent compositional changes of solids bombarded with reactive ions (1999) (51)
The use of secondary ion mass spectrometry for studies of oxygen adsorption and oxidation (1977) (50)
Effect of filter type and temperature on volatilisation losses from ammonium salts in aerosol matter (2005) (50)
Transient phenomena and impurity relocation in SIMS depth profiling using oxygen bombardment: pursuing the physics to interpret the data (1996) (48)
Assessment of the extent of atomic mixing from sputtering experiments (1982) (48)
The influence of sputtering, range shortening and stress-induced outdiffusion on the retention of xenon implanted in silicon (1976) (46)
Artifacts in low-energy depth profiling using oxygen primary ion beams: Dependence on impact angle and oxygen flooding conditions (1998) (45)
High fluence retention of noble gases implanted in silicon (1978) (45)
Secondary ion yield variations due to cesium implantation in silicon (1983) (43)
Unexpectedly high energy photoluminescence of highly Si doped GaAs grown by MOVPE (1982) (43)
Ion implantation and sputtering in the presence of reactive gases: Bombardment‐induced incorporation of oxygen and related phenomena (1981) (42)
Towards the ultimate limits of depth resolution in sputter profiling: Beam‐induced chemical changes and the importance of sample quality (1994) (41)
Unravelling the secrets of Cs controlled secondary ion formation: Evidence of the dominance of site specific surface chemistry, alloying and ionic bonding (2013) (40)
Low energy range distributions of 10B and 11B in amorphous and crystalline silicon (1982) (39)
Background formation in SIMS analysis of hydrogen, carbon, nitrogen and oxygen in silicon (1983) (39)
The effect of the angle of incidence on secondary ion yields of oxygen-bombarded solids (1983) (38)
Comparison of profile tailing in SIMS analyses of various impurities in silicon using nitrogen, oxygen, and neon ion beams at near-normal incidence (1990) (37)
Novel dose metric for apparent cytotoxicity effects generated by in vitro cell exposure to silica nanoparticles. (2011) (36)
Depth profiling by means of sims: Recent progress and current problems (1982) (36)
Brochosomes produced by leafhoppers-a widely unknown, yet highly abundant species of bioaerosols in ambient air (2005) (36)
Implications in the use of reactive ion bombardment for secondary ion yield enhancement (1981) (35)
Interface broadening in sputter depth profiling through alternating layers of isotopically purified silicon (1990) (35)
Evidence for strongly enhanced yields of negative molecular secondary ions due to bombardment with SFn cluster ions (1994) (34)
Surface roughening of silicon under ultra-low-energy cesium bombardment (2003) (34)
Comparison of ion-excited Auger electron emission and secondary ion emission from silicon bombarded with noble gas ions (1980) (33)
Influence of the impact angle on the depth resolution and the sensitivity in SIMS depth profiling using a cesium ion beam (1985) (33)
Angular dependence of ion yields and cesium surface coverage in Cs + attachment secondary ion mass spectrometry (CsAMS) (1994) (32)
Pre-equilibrium variation of the secondary ion yield☆ (1975) (32)
Successful operation of a scanning ion microscope with quadrupole mass filter (1976) (31)
Element-Specific broadening effects in SIMS depth profiling of light impurities implanted in silicon (1982) (31)
Concentration–depth calibration and bombardment‐induced impurity relocation in SIMS depth profiling of shallow through‐oxide implantation distributions: a procedure for eliminating the matrix effect (1998) (29)
Advanced evaluation of size-differential distributions of aerosol particles (2002) (28)
Current density effects in secondary ion emission studies (1976) (28)
Diatomic versus atomic secondary ion emission (1975) (28)
Mass resolved low-energy ion backscattering spectrometry at target-to-projectile mass ratios near unity (1996) (28)
TOF-SIMS characterisation of spark-generated nanoparticles made from pairs of Ir-Ir and Ir-C electrodes (2006) (28)
Implications in the use of sputtering for layer removal: the system Au on Si (1979) (28)
Comment on ’’A unified explanation for secondary‐ion yields and ’’mechanism of the SIMS matrix effect’’ (1981) (27)
Impact-energy dependence of atomic mixing and selective sputtering of light impurities in cesium-bombarded silicon (1983) (26)
System for combined SIMS‐AES‐XPS studies of solids (1980) (25)
Comparison of the retention characteristics of low-energy xenon and caesium implanted in silicon (1981) (25)
Phase separation and regrowth of aerosol matter collected after size fractionation in an impactor (2002) (25)
Elemental composition of aerosol particulate matter collected on membrane filters: A comparison of results by PIXE and ICP-AES (2002) (25)
Ion-induced electron emission as a means of studying energy- and angle-dependent compositional changes of solids bombarded with reactive ions: II. Nitrogen bombardment of silicon (1999) (24)
Radiation-enhanced outdiffusion of xenon implanted in aluminum (1977) (24)
Ionization Mechanism of H + Sputtered from Hydrogenated Silicon (1979) (24)
The influence of implanted xenon on the sputtering yield of silicon (1975) (24)
Thermodesorption of aerosol matter on multiple filters of different materials for a more detailed evaluation of sampling artifacts (2004) (24)
The Effect of Work Function Changes on Secondary Ion Energy Spectra (1983) (24)
Misconceptions impairing the validity of the stopping power tables in the SRIM library and suggestions for doing better in the future (2016) (24)
Surface and depth analysis based on sputtering (1991) (24)
Mechanism of MCs + formation in Cs based secondary ion mass spectrometry (2012) (24)
Improved secondary-ion extraction in a quadrupole-based ion microprobe (1982) (23)
Exceptionally pronounced redistribution of silver in oxygen bombarded silicon (1987) (23)
secondary ion production due to ion-surface bombardment (1977) (23)
Ranges of low-energy, light ions in amorphous silicon (1983) (23)
The ‘infinite velocity method’: a means of concentration calibration in secondary ion mass spectrometry? (1999) (22)
Influence of the depth calibration procedure on the apparent shift of impurity depth profiles measured under conditions of long-term changes in erosion rate (2000) (22)
Comparison of xenon retention in ion implanted silicon dioxide and oxygen-doped silicon (1978) (21)
Depth resolution in sputter profiling: Evidence against the sequential layer sputtering model (1978) (21)
Energy- and angle-resolved depth of origin of isotopes sputtered from an elemental target (1997) (20)
Local SiO2 formation in silicon bombarded with oxygen above the critical angle for beam‐induced oxidation: new evidence from sputtering yield ratios and correlation with data obtained by other techniques (2000) (20)
Apparent and real transient effects in SIMS depth profiling using oxygen bombardment (2003) (19)
DETERMINATION OF IMPLANTATION PROFILES IN SOLIDS BY SECONDARY-ION MASS SPECTROMETRY. (1972) (19)
Blistering effects in argon‐bombarded silicon (1978) (19)
Assessment of the relative contribution of atomic mixing and selective sputtering to beam induced broadening in SIMS depth profiling (1985) (19)
Range parameter distortion in heavy ion implantation (1975) (19)
Angular distributions of gold sputtered from a (111) crystal: Dependence of spot shapes and of spot and background yields on the primary ion mass and energy and on the target temperature (1993) (18)
Periodicity of impurity segregation effects in oxygen bombarded silicon (1987) (18)
Surprisingly large apparent profile shifts of As and Sb markers in Si bombarded with ultra-low-energy Cs ion beams (2003) (18)
Laboratory studies on the retention of nitric acid, hydrochloric acid and ammonia on aerosol filters (2005) (17)
The Big Ban on Bituminous Coal Sales Revisited: Serious Epidemics and Pronounced Trends Feign Excess Mortality Previously Attributed to Heavy Black-Smoke Exposure (2007) (17)
Angular dependence of silicon oxide formation and gold segregation due to low-energy O2+ implantation (1992) (17)
Production of molecular noble gas ions in a hot cathode ion source (1979) (17)
Modification of stationary xenon implantation profiles in silicon by low-energy postbombardment with inert-gas ions (1985) (16)
Dose and Response Metrics in Nanotoxicology: Wittmaack Responds to Oberdoerster et al. and Stoeger et al. (2007) (16)
Combustion characteristics of water-insoluble elemental and organic carbon in size selected ambient aerosol particles (2005) (16)
Volume Expansion and Oxygen Incorporation in Deuteron-Bombarded Silicon (1980) (16)
Abrupt reduction of the partial sputtering yield of copper in silicon due to beam induced oxidation and segregation (1986) (16)
Ion Induced Self Diffusion of Carbon (1986) (15)
Erosion of long-term wall samples in JET (1987) (15)
Low energy ion beam transport through apertures (1977) (15)
Electron emission and ion reflection from Mg, Al and Si bombarded with 1–10 keV O+ and Ne+ at impact angles between 0° and 84° (1996) (15)
Energy dependence of ion induced electron yields of aluminium and silicon bombarded with Ne+, O+, and O2+ (1991) (15)
Quantitative analysis of nitrogen in oxynitrides on silicon by MCs+ secondary ion mass spectrometry? (2002) (14)
Angular dependence of secondary ion emission from silicon bombarded with inert gas ions (1984) (14)
Quantitative characterization of xenon bubbles in silicon: Correlation of bubble size with the damage generated during implantation (2011) (14)
Impact and growth phenomena observed with sub-micrometer atmospheric aerosol particles collected on polished silicon at low coverage (2002) (14)
Experimental and theoretical investigations into the origin of cross-contamination effects observed in a quadrupole-based SIMS instrument (1985) (14)
Recent advances in sputter depth profiling (1986) (14)
Impact-energy dependence of the angular distribution of gold sputtered from a (111) crystal at 100 and 300 K (1982) (14)
RBS study on bombardment-induced redistribution of copper impurities in silicon using neon, oxygen and nitrogen ion beams at different impact angles (1990) (14)
An attempt to understand the sputtering yield enhancement due to implantation of inert gases in amorphous solids (1984) (13)
Correlation between the O+2 induced electron emission coefficient and the removal rate of Cu impurities segregated at the SiO2/Si interface (1991) (13)
Stable isotopes for determining biokinetic parameters of tellurium in rabbits. (1991) (13)
Effect of water treatment on analyte and matrix ion yields in matrix-assisted time-of-flight secondary ion mass spectrometry: the case of insulin in and on hydroxycinnamic acid. (2002) (13)
Depth of origin of sputtered atoms: Exploring the dependence on relevant target properties to identify the correlation with low-energy ranges (2012) (13)
Projectile-energy dependence and line shape of ArL Auger spectra from argon bombarded silicon (1979) (13)
Significantly extended analytical potential of Rutherford backscattering spectrometry by in situ combination with low‐energy sputtering (1988) (12)
EFFECTIVE CROSS SECTION FOR THE EXCITATION OF MOLECULAR VIBRATIONS BY FAST ELECTRONS (1965) (12)
Secondary ion mass spectrometry depth profiling of boron and antimony deltas in silicon: Comparison of the resolution functions using oxygen bombardment at different energies and impact angles (1994) (12)
Beam formation in a triode ion gun (1974) (12)
Characterization of Carbon Nanoparticles in Ambient Aerosols by Scanning Electron Microscopy and Model Calculations (2004) (12)
Effect of matrix composition and impact angle on the fractional ion yield of Be+ sputtered from oxygen‐bombarded silicon and compound semiconductors (1989) (11)
Rapid-relocation model for describing high-fluence retention of rare gases implanted in solids (2009) (10)
Peak or centroid — which parameter is better suited for quantifying apparent marker locations in low‐energy sputter depth profiling with reactive primary ion beams? (2001) (10)
Penalties plus high-quality review to fight plagiarism (2005) (10)
Postionization of sputtered neutrals by a focused electron beam (1993) (10)
Mechanisms responsible for inducing and balancing the presence of Cs adatoms in dynamic Cs based SIMS (2012) (9)
Influence of Source Parameters on the Properties of an Ion Beam (1973) (9)
Analysis of Defect Annealing in Monocrystalline Gold Foils after Gold Ion Irradiation (1970) (9)
Novel approach to identifying supersaturated metastable ambient aerosol particles. (2005) (8)
In search of optimum conditions for the growth of sharp and shallow B-delta markers in Si by molecular beam epitaxy (2000) (8)
A new analysis chamber with a rotating target holder for total-sample PIXE analysis of aerosol deposits collected in Berner impactors (1999) (8)
Projectile-energy dependence of compositional changes produced in sputtering of a dilute Si(Fe, W) alloy (1980) (8)
Ion-and electron-excited residual-gas analysis using a SIMS instrument (1982) (8)
Energy Dependence and Annealing Behaviour of Boron Range Distributions in Silicon (1973) (8)
Gas-phase ionisation of sputtered rare gas atoms (2008) (7)
Modifications to the electrical properties of PbTe by low‐energy ion bombardment—interpretation in terms of differential sputtering and atomic mixing (1983) (7)
Concept and validation of a novel approach for producing large batches of reference material of ambient aerosols on filters (2005) (7)
Small-area depth profiling in a quadrupole based SIMS instrument (1995) (7)
SIMS analysis of xenon and krypton in uranium dioxide: A comparison of two models of gas-phase ionisation (2008) (7)
Range Distributions of Boron in Silicon Dioxide and the Underlying Silicon Substrate (1975) (7)
Determination of Isotope Ratios of Calcium and Iron in Human Blood by Secondary Ion Mass Spectrometry (1979) (7)
Experimental verification of some predictions of a simple model of ion implantation in the presence of sputtering (1985) (7)
Comparison of secondary ion emission induced in silicon oxide by MeV and keV ion bombardment (1994) (6)
Extreme surface sensitivity in neon–ion scattering from silicon at ejection energies below 80 eV: Evidence for the presence of oxygen on ion bombarded SiO2 (1997) (6)
PIXE analysis of biomedical samples by means of an external proton beam (1984) (6)
Sample-thickness dependence and chemical effects in SIMS depth profiling of multilayer Langmuir-Blodgett-films (1986) (6)
THE PATHOGENESIS OF OTOSCLEROSIS (1931) (6)
Annealing of boron‐implanted silicon using a CW CO2 Laser (1981) (6)
Novel model of negative secondary ion formation and its use to refine the electronegativity of almost fifty elements. (2014) (6)
Simplified approach to measuring semivolatile inorganic particulate matter using a denuded cellulose filter without backup filters (2006) (6)
Secondary ion emission from polymer layers by atomic and molecular ion bombardment: Data evaluation based on linear-cascade sputtering theory (2006) (6)
Time‐of‐Flight Effects in Quadrupole‐Based Scanning Ion Microprobes (1980) (6)
Dose calibration for through-oxide doping distributions from time-dependent secondary-ion-mass-spectrometry depth profiles with only one sensitivity factor (1999) (6)
Optimisation of peak-to-background ratios in proton-induced X-ray analysis of material deposited on thin and thick backings (2000) (6)
Highly accurate nuclear and electronic stopping cross sections derived using Monte Carlo simulations to reproduce measured range data (2017) (5)
Deriving the mean primary-particle diameter and related quantities from the size distribution and the gravimetric mass of spark generated nanoparticles (2007) (5)
In situ observation of gas reemission and blister rupture during helium implantation in silicon (2008) (5)
RBS control of the proton fluence in external PIXE analysis using a He atmosphere (1996) (5)
Accurate in situ calibration of the energy bandwidth and the zero-energy offset in SIMS analysis using magnetic sector field instruments (2011) (4)
Detailed evaluation of the analytical resolution function (2003) (4)
Determination of ion source pressure from discharge characteristics (1977) (4)
Characterisation of Fulvic Acids and Glycyrrhizic Acid by Time‐of‐Flight Secondary Ion Mass Spectrometry (2001) (4)
Miniature parallel-plate denuder for the collection of inorganic trace gases and their removal from aerosol-laden air (2006) (4)
On the origin of apparent Z1-oscillations in low-energy heavy-ion ranges (2016) (4)
Towards a realistic description of the contribution of primary and secondary aerosols to ambient particle number and mass distributions (2004) (4)
Short-term sampling and pixe analysis of aerosol particulates collected at two different sites in the munich area (1986) (4)
Ion-to-neutral conversion in time-of-flight secondary ion mass spectrometry (2003) (4)
A spray technique for preparing uniform large-area PIXE calibration standards from aqueous solutions (1999) (4)
Charge compensation in SIMS analysis of polymer foils using negative secondary ions (1987) (4)
Surface recession of silicon under normally incident oxygen bombardment studied by atomic force microscopy of microscale sputtered craters (2000) (4)
Attenuation length in ion-induced kinetic electron emission: A key to an understanding of angular-dependent yields (2015) (3)
Problems Encountered in Depth Profiling of Nitrogen and Oxygen in Silicon by Means of Secondary Ion Mass Spectrometry (1979) (3)
Comprehensive modelling of secondary-ion energy spectra measured with a magnetic sector field instrument: I. Concept and basic features (2014) (3)
Non-Gaussian range profiles in amorphous solids (1973) (3)
Characteristics of sputtered particles, technical applications (1991) (3)
Some aspects of the use of SIMS for investigations on iron metabolism based upon the application of isotopically enriched tracers (1986) (3)
Comprehensive modelling of secondary-ion energy spectra measured with a magnetic sector field instrument: II. Evaluation of experimental data☆ (2014) (3)
A New Scanning Ion Microscope for Surface and In-Depth Analysis (1976) (3)
Profiles of the optical absorption constant and interface composition in epitaxial silicon films (1976) (3)
Performance characteristics of a plasma-type sputter ion source (1984) (3)
Quantitative analysis of W-C:H coatings by EPMA, RBS (ERD) and SIMS (1994) (3)
Peak position and width of the energy distribution of ion beams extracted from a plasma source (1992) (2)
Dual-energy technique for rapid, high-sensitivity PIXE analysis of aerosol samples covering elements with atomic numbers down to Z = 13 (1996) (2)
Combined PIXE/RBS study on the incorporation and depth distribution of cesium in cuticles of pear leaves subject to cation exchange in a cscl solution (1990) (2)
Order-of-magnitude differences in retention of low-energy Ar implanted in Si and SiO2 (2016) (2)
Influence of alloying on the electron momentum density in the Cu-Ni system (1999) (2)
The Influence of Recoil Implantation of Absorbed Oxygen on the Entrapment of Xenon in Aluminum and Silicon (1977) (2)
Identification, simulation and avoidance of artifacts in ultra-shallow depth profiling by secondary ion mass spectrometry (1998) (2)
Reply to the Letter to the Editor Regarding My Article on Dose Metrics in Nanotoxicity Studies (Wittmaack, 2011) (2012) (1)
Neutralization phenomena observed with secondary ions originating from inner‐shell excitation (2011) (1)
Deriving the mean primary-particle diameter and related quantities from the size distribution and the gravimetric mass of spark generated nanoparticles (2007) (1)
State of the art in high-resolution SIMS depth profiling (2001) (1)
Reply to the ‘Comment on “The ‘infinite velocity method’: a means of concentration calibration in secondary ion mass spectrometry?”’ (2000) (1)
Incorporation of chlorine in polymer films due to MeV proton bombardment (2000) (1)
Production of ions of the opposite charge in mass analysis using a quadrupole filter (1986) (1)
Reemission of implanted xenon by 100–270 keV helium (1984) (1)
Interactive comment on “Combustion characteristics of water-insoluble elemental and organic carbon in size selected ambient aerosol particles” by K. Wittmaack (2005) (0)
Workforce: The joys of research in retirement (2015) (0)
SEASONAL VARIATION OF THE APPARENT MASS CONCENTRATION OF POLYCYCLIC AROMATIC HYDROCARBONS IN AMBIENT AEROSOL PARTICLES (2004) (0)
Bombardment induced charging and electrical properties of ion beam synthesised silicon oxides (1997) (0)
Secondary-ion mass spectrometer with electric quadrupoles of high detection sensitivity (1972) (0)
Depth Profiling in Combination with Sputtering (1995) (0)
Stage III annealing in monocrystalline gold films after 30 keV-gold ion irradiation (1969) (0)
Annealing of Boron-Implanted Silicon Using a CW CO2 Laser (1981) (0)
Angewandte oberflächenanalyse: by M. Grasserbauer, H.J. Dudek and M.F. Ebel (Springer-Verlag, Berlin-Heidelberg-New-York-Tokyo, 1986) pp. x+ 300 with 150 figures, DM 198- Cloth bound. ISBN 3-540-15050-1 (1987) (0)
Publisher’s Note: Analytical description of the sputtering yields of silicon bombarded with normally incident ions [Phys. Rev. B68, 235211 (2003)] (2004) (0)
Comment on : The 'infinite velocity method' : a means of concentration calibration in secondary ion mass spectrometry? Author's reply (2000) (0)
Corrigendum to “Misconceptions impairing the validity of the stopping power tables in the SRIM library and suggestions for doing better in the future” [Nucl. Instr. Meth. B 380 (2016) 57–70] (2016) (0)
Cluster Ion Emission from Cesium Chloride Bombarded with Atomic and Molecular Ions (1991) (0)
Identification of an unusual source of background signals in energy dispersive PIXE analysis — A detective story (1998) (0)
Production and in-situ analysis of microscale oxide structures in silicon by oxygen implantation (1993) (0)
DEPTH DISTRIBUTION OF CHARACTERISTIC X-RAY PRODUCTION IN COPPER BY 12- TO 30-keV ELECTRONS. (1971) (0)
Erratum to “Comprehensive modelling of secondary-ion energy spectra measured with a magnetic sector field instrument: II. Evaluation of experimental data” [Int. J. Mass Spectrom. 358 (2013) 49–58] (2014) (0)
YIELD OF PARENT AND FRAGMENT IONS SPUTTERED FROM ORGANIC OVERLAYERS BY LOW-VELOCITY ARGON : VARIATION WITH IMPACT ANGLE AND COVERAGE (1989) (0)
Thickness uniformity of beryllium foils derived from energy loss broadening of transmitted MeV protons (2000) (0)
Quantitative Analysis of Solids by SIMS and SNMS (2017) (0)

This paper list is powered by the following services:

What Schools Are Affiliated With Klaus Wittmaack?

Klaus Wittmaack is affiliated with the following schools:

University of California, Berkeley
Ludwig Maximilian University of Munich
Stanford University
University of Hamburg