Leo Rafael Reif
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Venezuelan-born American electrical engineer, writer and academic administrator
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Engineering
Leo Rafael Reif's Degrees
- Masters Electrical Engineering Stanford University
- PhD Electrical Engineering Stanford University
Why Is Leo Rafael Reif Influential?
(Suggest an Edit or Addition)According to Wikipedia, Leo Rafael Reif is a Venezuelan American electrical engineer and academic administrator. He previously served as the 17th president of the Massachusetts Institute of Technology from 2012 to 2022, provost of the institute from 2005 to 2012, and dean of the institute's EECS department from 2004 to 2005.
Leo Rafael Reif's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Interconnect limits on gigascale integration (GSI) in the 21st century (2001) (516)
- Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters (1987) (306)
- Copper Wafer Bonding (1999) (213)
- System-level performance evaluation of three-dimensional integrated circuits (2000) (191)
- Technology, performance, and computer-aided design of three-dimensional integrated circuits (2004) (154)
- Morphology and Bond Strength of Copper Wafer Bonding (2004) (149)
- Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid-phase crystallization: Theory, experiments, and thin-film transistor applications (1994) (130)
- Design tools for 3-D integrated circuits (2003) (125)
- Silicon epitaxy at 650–800 °C using low‐pressure chemical vapor deposition both with and without plasma enhancement (1985) (123)
- Polysilicon thin-film transistors with channel length and width comparable to or smaller than the grain size of the thin film (1991) (116)
- Wiring requirement and three-dimensional integration technology for field programmable gate arrays (2003) (99)
- Measurements of the bulk, C-axis electromechanical coupling constant as a function of AlN film quality (2000) (99)
- Microstructure evolution and abnormal grain growth during copper wafer bonding (2002) (96)
- Thermal analysis of three-dimensional (3-D) integrated circuits (ICs) (2001) (90)
- Air‐bridge microcavities (1995) (89)
- Electromechanical coupling constant extraction of thin-film piezoelectric materials using a bulk acoustic wave resonator (1998) (83)
- Comparisons of conventional, 3-D, optical, and RF interconnects for on-chip clock distribution (2004) (82)
- Three-dimensional integrated circuits: performance, design methodology, and CAD tools (2003) (80)
- Silicon surface cleaning by low dose argon‐ion bombardment for low‐temperature (750 °C) epitaxial silicon deposition. I. Process considerations (1987) (79)
- Chemical Vapor Deposition of Epitaxial Silicon from Silane at Low Temperatures I . Very Low Pressure Deposition (1989) (76)
- Silicon Multilayer Stacking Based on Copper Wafer Bonding (2005) (73)
- Low‐Temperature Deposition of Highly Textured Aluminum Nitride by Direct Current Magnetron Sputtering for Applications in Thin‐Film Resonators (1999) (69)
- Microstructure examination of copper wafer bonding (2001) (69)
- Contact resistance measurement of bonded copper interconnects for three-dimensional integration technology (2004) (68)
- Temperature dependence of Si1−xGex epitaxial growth using very low pressure chemical vapor deposition (1991) (68)
- Timing, energy, and thermal performance of three-dimensional integrated circuits (2004) (59)
- Copper bonded layers analysis and effects of copper surface conditions on bonding quality for three-dimensional integration (2005) (58)
- Low-temperature thermal oxide to plasma-enhanced chemical vapor deposition oxide wafer bonding for thin-film transfer application (2003) (54)
- Bonding parameters of blanket copper wafer bonding (2006) (53)
- Calibration of Rent's rule models for three-dimensional integrated circuits (2004) (51)
- Wire-length distribution of three-dimensional integrated circuits (1999) (50)
- Comparison of PPCPs removal on a parallel-operated MBR and AS system and evaluation of effluent post-treatment on vertical flow reed beds. (2011) (47)
- Low-temperature process to increase the grain size in polysilicon films (1981) (46)
- Computer Simulation in Silicon Epitaxy (1981) (46)
- Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO2 (1985) (46)
- Temperature and duration effects on microstructure evolution during copper wafer bonding (2003) (46)
- Silicon surface cleaning by low dose argon‐ion bombardment for low‐temperature (750 °C) epitaxial deposition. II. Epitaxial quality (1987) (46)
- Abnormal contact resistance reduction of bonded copper interconnects in three-dimensional integration during current stressing (2005) (43)
- Observation of interfacial void formation in bonded copper layers (2005) (42)
- Effects of Ge on Material and Electrical Properties of Polycrystalline Si1 − x Ge x for Thin‐Film Transistors (1995) (42)
- Selective silicon epitaxial growth at 800 °C by ultralow‐pressure chemical vapor deposition using SiH4 and SiH4/H2 (1989) (40)
- An optimized in situ argon sputter cleaning process for device quality low‐temperature (T≤800 °C) epitaxial silicon: Bipolar transistor and pn junction characterization (1987) (39)
- Comparison of key performance metrics in two- and three-dimensional integrated circuits (2000) (39)
- Real‐Time, In Situ Monitoring of Room‐Temperature Silicon Surface Cleaning Using Hydrogen and Ammonia Plasmas (1993) (38)
- Segregation of Arsenic to the Grain Boundaries in Polycrystalline Silicon (1980) (37)
- Interfacial morphologies and possible mechanisms of copper wafer bonding (2002) (37)
- IV-1 – Plasma-Enhanced Chemical Vapor Deposition (1991) (36)
- Early stage evolution kinetics of the polysilicon/single‐crystal silicon interfacial oxide upon annealing (1991) (35)
- Comparison of effects between large-area-beam ELA and SPC on TFT characteristics (1996) (34)
- Optimized Deposition Parameters for Low Pressure Chemical Vapor Deposited Titanium Silicide (1988) (34)
- Implant‐dose dependence of grain size and {110} texture enhancements in polycrystalline Si films by seed selection through ion channeling (1986) (33)
- Raman scattering in polycrystalline silicon doped with boron (1992) (33)
- Solid phase epitaxial recrystallization of thin polysilicon films amorphized by silicon ion implantation (1982) (32)
- Low‐temperature silicon epitaxy using low pressure chemical vapor deposition with and without plasma enhancement (1984) (31)
- Effects of hydrogen and deposition pressure on Si1−xGex growth rate (1992) (30)
- Evaluation of C 4 F 8 O as an Alternative Plasma‐Enhanced Chemical Vapor Deposition Chamber Clean Chemistry (2000) (30)
- Investigations of strength of copper-bonded wafers with several quantitative and qualitative tests (2006) (29)
- Transient and Steady‐State Response of the Dopant System of a Silicon Epitaxial Reactor: Transfer‐Function Approach (1978) (28)
- Polycrystalline Si thin‐film transistors fabricated at ≤800 °C: Effects of grain size and {110} fiber texture (1987) (28)
- The Use of Unsaturated Fluorocarbons for Dielectric Etch Applications (2002) (27)
- Evaluation of trifluoroacetic anhydride as an alternative plasma enhanced chemical vapor deposition chamber clean chemistry (1998) (27)
- A high-frequency fully differential BiCMOS operational amplifier (1991) (27)
- Chemical Vapor Deposition of Epitaxial Silicon from Silane at Low Temperatures II . Plasma Enhanced Deposition (1989) (26)
- Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition I . Kinetics (1986) (26)
- Process development and bonding quality investigations of silicon layer stacking based on copper wafer bonding (2005) (26)
- The effect of forming gas anneal on the oxygen content in bonded copper layer (2005) (25)
- Chemical Vapor Deposition of Epitaxial Silicon‐Germanium from Silane and Germane II . In Situ Boron, Arsenic, and Phosphorus Doping (1995) (24)
- In-situ low-temperature (600°C) wafer surface cleaning by electron cyclotron resonance hydrogen plasma for silicon homoepitaxial growth (1996) (23)
- Low‐temperature in situ surface cleaning of oxide‐patterned wafers by Ar/H2 plasma sputter (1990) (23)
- Plasma enhanced chemical vapor deposition of thin crystalline semiconductor and conductor films (1984) (22)
- Plasma‐enhanced metalorganic chemical vapor deposition of GaAs (1987) (22)
- Comparison of thin‐film transistors fabricated at low temperatures (≤600 °C) on as‐deposited and amorphized‐crystallized polycrystalline Si (1987) (22)
- A Model for Dopant Incorporation into Growing Silicon Epitaxial Films I . Theory (1979) (22)
- Plasma-enhanced chemical vapor deposition of in situ doped epitaxial silicon at low temperatures. I. Arsenic doping (1989) (21)
- Chemical Vapor Deposition of Epitaxial Silicon‐Germanium from Silane and Germane I . Kinetics (1995) (21)
- A unified electrothermal hot-carrier transport model for silicon bipolar transistor simulations (1989) (21)
- Crystallization of amorphous silicon films using a multistep thermal annealing process (1988) (21)
- Low-Temperature Direct CVD Oxides to Thermal Oxide Wafer Bonding in Silicon Layer Transfer (2005) (21)
- Use of Novel Hydrofluorocarbon and Iodofluorocarbon Chemistries for a High Aspect Ratio Via Etch in a High Density Plasma Etch Tool (1998) (21)
- Phosphorus Incorporation during Silicon Epitaxial Growth in a CVD Reactor (1982) (20)
- Analytical modeling of polycrystalline silicon emitter bipolar transistors under high-level injection (1994) (20)
- Polycrystalline silicon–germanium films on oxide using plasma‐enhanced very‐low‐pressure chemical vapor deposition (1995) (19)
- Phosphorus doping of epitaxial Si and Si1−xGex at very low pressure (1993) (18)
- Wiring requirement and three-dimensional integration of field-programmable gate arrays (2001) (18)
- Bipolar transistor fabrication in low-temperature (745°C) ultra-low-pressure chemical-vapor-deposited epitaxial silicon (1987) (18)
- Low pressure chemical vapor deposition of titanium silicide (1985) (18)
- Microelectronics Thin Film Handling and Transfer Using Low-Temperature Wafer Bonding (2005) (17)
- Fourier transform infrared spectroscopy of effluents from pulsed plasmas of 1,1,2,2-tetrafluoroethane, hexafluoropropylene oxide, and difluoromethane (1999) (17)
- Dose dependence of crystallization in implanted polycrystalline silicon films on SiO2 (1988) (17)
- A trapping mechanism for autodoping in silicon epitaxy—I. Theory (1985) (16)
- Silicon selective epitaxial growth at 800 °C using SiH4/H2 assisted by H2/Ar plasma sputter (1989) (16)
- Selective deposition of TiSi2 on oxide patterned wafers using low pressure chemical vapor deposition (1991) (16)
- Growth and characterization of undoped and in situ doped Si1-xGex on patterned oxide Si substrates by very low pressure chemical vapor deposition at 700 and 625 °C (1991) (16)
- Evaluation of a Dilute Nitrogen Trifluoride Plasma Clean in a Dielectric PECVD Reactor (1999) (16)
- Characteristics of narrow-channel polysilicon thin-film transistors (1991) (16)
- In-situ monitoring of epitaxial film thickness by IEMI (1992) (16)
- Seed selection through ion channeling to modify crystallographic orientations of polycrystalline Si films on SiO2: Implant angle dependence (1985) (16)
- A trapping mechanism for autodoping in silicon epitaxy—II. Parameter extraction and simulations (1985) (15)
- Evaluation of Oxalyl Fluoride for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool (2001) (15)
- A sealed cavity TFR process for RF bandpass filters (1996) (15)
- In situ arsenic doping of epitaxial silicon at 800 °C by plasma enhanced chemical vapor deposition (1987) (15)
- A multichamber single‐wafer chemical vapor deposition reactor and electron cyclotron resonance plasma for flexible integrated circuit manufacturing (1991) (15)
- Transients in the Deposition of Silicon Epitaxial Films in a CVD Reactor (1981) (15)
- Large spontaneous nucleation rate in implanted polycrystalline silicon films on SiO2 (1987) (14)
- Use of 2H-heptafluoropropane, 1-iodoheptafluoropropane, and 2-iodoheptafluoropropane for a high aspect ratio via etch in a high density plasma etch tool (1998) (14)
- A Model for Dopant Incorporation into Growing Silicon Epitaxial Films II . Comparison of Theory and Experiment (1979) (14)
- Electrical quality of low‐temperature (Tdep=775 °C) epitaxial silicon: The effect of deposition rate (1988) (13)
- Plasma‐enhanced deposition of high‐quality epitaxial silicon at low temperatures (1987) (13)
- Very low pressure chemical vapor deposition process for selective titanium silicide films (1988) (13)
- Room temperature wafer surface cleaning by in-situ ECR (electron cyclotron resonance) hydrogen plasma for silicon homoepitaxial growth (1997) (12)
- Plasma‐Enhanced Chemical Vapor Deposition of Silicon Epitaxial Layers (1984) (12)
- Growth of epitaxial Si1-xGex layers at 750° C by VLPCVD (1991) (12)
- Effect of thermal annealing on the Raman spectrum of Si1−xGex grown on Si (1993) (12)
- 3-D Interconnects Using Cu Wafer Bonding : Technology and Applications (2004) (12)
- Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition. (1986) (11)
- Bulk‐quality bipolar transistors fabricated in low‐temperature (Tdep =800 °C) epitaxial silicon (1987) (11)
- Annealing behavior of thin polycrystalline silicon films damaged by silicon ion implantation in the critical amorphization range (1983) (11)
- Structural and electrical properties of polycrystalline silicon films deposited by low pressure chemical vapor deposition with and without plasma enhancement (1986) (11)
- The Evaluation of Hexafluorobenzene as an Environmentally Benign Dielectric Etch Chemistry (2001) (11)
- High density plasma oxide etching using nitrogen trifluoride and acetylene (2000) (11)
- Evaluation of Pentafluoroethane and 1,1-Difluoroethane for a Dielectric Etch Application in an Inductively Coupled Plasma Etch Tool (2000) (11)
- Thermal stability of Si/Si1−xGex/Si heterostructures deposited by very low pressure chemical vapor deposition (1992) (10)
- Plasma Enhanced Chemical Vapor Deposition of Blanket TiSi2 on Oxide Patterned Wafers I . Growth of Silicide (1992) (10)
- Modifying Polycrystalline Films Through Ion Channelling (1983) (10)
- Silicon Layer Stacking Enabled by Wafer Bonding (2006) (10)
- EPIFILM THICKNESS MEASUREMENTS USING FOURIER TRANSFORM INFRARED SPECTROSCOPY : EFFECT OF REFRACTIVE INDEX DISPERSION AND REFRACTIVE INDEX MEASUREMENT (1994) (10)
- Fundamentals of epitaxial silicon film thickness measurements using emission and reflection Fourier transform infrared spectroscopy (1993) (10)
- Plasma etching of dielectric films with novel iodofluorocarbon chemistries: Iodotrifluoroethylene and 1-iodoheptafluoropropane (1998) (9)
- Ex situ wafer surface cleaning by HF dipping for low temperature silicon epitaxy (1997) (8)
- DC Magnetron Reactive Sputtering of Low Stress AlN Piezoelectric Thin Films for MEMS Application (1998) (8)
- Phosphorus incorporation in GaAsP grown by remote-plasma MOCVD (1989) (7)
- Substrate noise analysis and experimental verification for the efficient noise prediction of a digital PLL (2005) (7)
- Seed selection through ion channeling to produce uniformly oriented polycrystalline Si films on SiO2 (1984) (7)
- Enhanced electrical quality of low‐temperature (Tdep≤800 °C) epitaxial silicon deposited by plasma‐enhanced chemical vapor deposition (1988) (7)
- A back-to-face silicon layer stacking for three-dimensional integration (2005) (7)
- Plasma‐controlled deposition of GaAs and GaAsP by metalorganic chemical vapor deposition (1988) (7)
- Investigation of the Effects of Very Low Pressure Chemical Vapor Deposited TiSi2 on Device Electrical Characteristics (1989) (7)
- Solid phase epitaxy of polycrystalline silicon films: Effects of ion implantation damage (1984) (7)
- Surface effect as a limitation on the performance of polycrystalline Si thin‐film transistors (1988) (6)
- Determination of optical constants of strained Si1−xGex epitaxial layers in the spectral range 0.75–2.75 eV (1997) (6)
- Structural characterization of low temperature Epi-silicon grown on {100} and {111} Si substrates using ultrahigh resolution cross-sectional TEM (1993) (6)
- Characterization of iodoheptafluoropropane as a dielectric etchant. III. Effluent analysis (2001) (6)
- A novel poly-silicon-capped poly-silicon-germanium thin-film transistor (1995) (6)
- Plasma Enhanced Chemical Vapor Deposition of Blanket TiSi2 on Oxide Patterned Wafers II . Silicide Properties (1992) (6)
- Resistivity Study of P-, B-, and BF2-Implanted Polycrystalline Si1-xGex Films with Subsequent Annealing (1994) (5)
- Environmental Impact Evaluation Methodology for Emerging Silicon-Based Technologies (2006) (5)
- Electrical characterization of epitaxial silicon deposited at low temperatures by plasma-enhanced chemical vapor deposition (1985) (5)
- In situ doping in silicon selective epitaxial growth at 800 °C by ultralow‐pressure chemical vapor deposition (1990) (5)
- Low temperature Si2H6 Si epitaxy in-situ doped with AsH3/SiH4 (1991) (5)
- Deposition of Doped Polysilicon Films by Plasma‐Enhanced Chemical Vapor Deposition from AsH3 / SiH4 or B 2 H 6 / SiH4 Mixtures (1990) (5)
- Solid-phase epitaxial growth of polycrystalline silicon films amorphized by ion implantation (1984) (5)
- Cross-sectional TEM characterization of low temperature (750-800°C) epitaxial silicon by very low pressure (6 mTorr) chemical vapor deposition with and without plasma enhancement (1988) (4)
- Cross-Sectional TEM Investigation of Low-Temperature Epitaxial Silicon Films Grown by Ultra-Low Pressure CVD (1986) (4)
- High structural quality epi/oxide boundaries of selective epitaxy grown by SiH4/H2 chemical vapor deposition using growth‐sputter cycles (1990) (4)
- Characterization of iodoheptafluoropropane as a dielectric etchant. I. Process performance evaluation (2001) (4)
- Technology and applications of three-dimensional integration (2004) (4)
- Characterization of iodoheptafluoropropane as a dielectric etchant. II. Wafer surface analysis (2001) (4)
- Plasma cleaning of carbon species for silicon homoepitaxial growth (2003) (4)
- Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow‐pressure chemical vapor deposition (1988) (4)
- Epi-film thickness measurements using emission Fourier transform infrared spectroscopy. I. Sensor characterization (1995) (4)
- Characterization of a new reactor for remote plasma chemical vapor deposition (1989) (4)
- Effect of current and voltage stress on the DC characteristics of SiGe-base heterojunction bipolar transistors (1994) (4)
- Epi-film thickness measurements using emission Fourier transform infrared spectroscopy. II. Real-time in situ process monitoring and control (1995) (4)
- MOSFET Characteristics in low-temperature plasma-enhanced chemical vapor deposited epitaxial silicon (1986) (3)
- Correlation between hole carrier densities and a Raman spectrum in polycrystalline silicon doped with boron (1992) (3)
- Unusually abrupt switching in submicrometer thin-film transistors using a polysilicon film with enhanced grain size (1990) (3)
- Low temperature cleaning of Si by a H2/AsH3 plasma prior to heteroepitaxial growth of GaAs by metalorganic chemical vapor deposition (MOCVD) (1990) (3)
- Erratum: Silicon epitaxial growth on (100) patterned oxide wafers at 800 °C by ultralow‐pressure chemical vapor deposition [Appl. Phys. Lett. 52, 1797 (1988)] (1988) (3)
- Microcavities in Channel Waveguides (1996) (3)
- A low temperature (Tdep ⩽800 °C) chemical vapor deposition process for the deposition of device-quality epitaxial silicon (1988) (3)
- Reduction of semiconductor process emissions by reactive gas optimization (2004) (3)
- In situ semiconductor materials characterization by emission Fourier transform infrared spectroscopy (1994) (3)
- Characteristics of thin film transistors fabricated in polysilicon films deposited by plasma enhanced chemical vapor deposition (1991) (3)
- Fabrication Using Copper Thermo‐Compression Bonding at MIT (2008) (2)
- A Trapping Mechanism for Autodoping in Silicon Epitaxy - I. Theory (1985) (2)
- Metrology of sub-0.5 μm silicon epitaxial films (1998) (2)
- Steady state lattice heating by hot carriers in silicon bipolar transistors (1987) (2)
- Depth dependence of nucleation in implanted polycrystalline silicon films on SiO2 (1987) (2)
- An extremely abrupt switching phenomenon in small-dimension polysilicon TFT structures with enhanced grain size (1989) (2)
- Low temperature growth of homoepitaxial film on Si substrate cleaned in-situ by ECR hydrogen plasma (2003) (2)
- Quantitative Studies on the Evolution of the Polysilicon/Silicon Interfacial Oxide Upon Annealing (1990) (2)
- Investigation and Effects of Wafer Bow in 3D Integration Bonding Schemes (2010) (2)
- Effect of Substrate Heating During Excimer Laser Annealing on Poly-Si TFT (1995) (2)
- Modifying Crystallographic Orientations of Polycrystalline Si Films Using Ion Channeling (1984) (2)
- Fabrication and characterization of bipolar transistors with in-situ doped low-temperature (800 degrees C) epitaxial silicon (1989) (2)
- Low Temperature Silicon Epitaxy Deposited by Very Low Pressure Chemical Vapor Deposition III . Pattern Transfer (1986) (2)
- Fabrication Technologies for Three-Dimensional Integrated Circuits (invited). (2002) (1)
- Three-Dimensional Integration: Analysis and Technology Development (2004) (1)
- Real‐time in situ epitaxial film thickness monitoring and control using an emission Fourier transform infrared spectrometer (1994) (1)
- Environmental, safety, and health issues in IC production : symposium held December 4-5, 1996, Boston, Massachusetts, U.S.A. (1997) (1)
- Summary Abstract: Comparative study of polycrystalline silicon thin films deposited by very low pressure chemical vapor deposition with and without plasma enhancement (1987) (1)
- Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures (1994) (1)
- IIIB-2 polycrystalline Si thin-film transistors fabricated at ≤800°C: Effects of grain size and {110} fiber texture (1987) (1)
- Conductivity properties of narrow-channel polysilicon thin-film transistors (1989) (1)
- Enhancing the Grain Size and {110} Texture of Polycrystalline Si Films By Seed Selection Through Ion Channeling: Implant-Dose Dependence (1985) (1)
- Investigation of the Effects of Very Low Pressure Chemical Vapor Deposited TiSi2 on Device Electrical Characteristics. (1990) (1)
- Copper Metallization Needs for Wafer-Level, Three-Dimensional Integration (2006) (1)
- Effect of rinsing and drying on silicon surface cleaning for epitaxial growth (2002) (1)
- Deposition of Doped Polysilicon Films by Plasma-Enhanced Chemical Vapor Deposition from AsH3/SiH4 or B2H6/SiH4 Mixtures. (1990) (1)
- High-level injection influence on the high frequency performance of polycrystalline silicon emitter bipolar transistors (1994) (1)
- Growth and Characterization of Epitaxial GaAs Deposited by Plasma-Enhanced Metal-Organic Chemical Vapor Deposition (1987) (1)
- Growth and Characterization of Silicon-Germanium Films on Oxide by VLPCVD/PE-VLPCVD (1993) (1)
- Fabrication of Polycrystalline Si 1− x Ge x Films on Oxide for Thin-Film Transistors (1994) (1)
- Improvement of GaAs crystal quality grown on Si by metalorganic chemical vapor deposition through two‐dimensional‐like nucleation with an in situ H2/AsH3 plasma cleaning at 450 °C (1991) (1)
- Three-Dimensional Integration : Analysis , Modeling and Technology Development Personnel (2000) (1)
- Directed Self-Assembly of Carbon Nanotube Wires for Electronics (2004) (0)
- A Trapping Mechanism for Autodoping in Silicon Epitaxy - II. Parameter Extraction and Simulations (1985) (0)
- Metrology of Very Thin Silicon Epitaxial Films using Spectroscopic Ellipsometry (1996) (0)
- Modeling Autodoping in Silicon Epitaxy (1983) (0)
- Relation of contact resistance reduction and process parameters of bonded copper interconnects in three-dimensional integration technology (2003) (0)
- Electrical characterization of junctions and bipolar transistors formed with in situ doped low-temperature (800 degrees C) epitaxial silicon (1991) (0)
- Influence of Carbon on Donor Formation in Silicon Epitaxial Films Deposited Between 750° and 800°C (1988) (0)
- Structural Defects of Silicon Epitaxy and Epi/Substrate Interface Related to Improper In-Situ Surface Cleaning at Low Temperatures (1990) (0)
- Abstract Submitted for the MAR06 Meeting of The American Physical Society Wafer Bow Effect on Copper Wafer Bonding (2012) (0)
- Optimized Deposition Parameters for Low Pressure Chemical Vapor Deposited Titanium Silicide. (1989) (0)
- Silicon-germanium polycrystalline films for TFT applications (1994) (0)
- Low Temperature and Low Pressure Silicon Epitaxy by Plasma-Enhanced CVD (1987) (0)
- Plasma etching processes for the reduction of global warming emissions (2000) (0)
- Preparation and Properties of Hydrogenated Amorphous Silicon Produced by Plasma-Enhanced Chemical Vapor Decomposition of Silane (1987) (0)
- Material Characterization of Low-Temperature Silicon Epitaxial Growth on Patterned Oxidized Wafers by ULPCVD From SiH 4 /SiF 4 /H 2 (1990) (0)
- Structural Characterization of Si 1-x Ge x Multilayer Growth On Patterned Substrates by Very-Low-Pressure Cvd (1991) (0)
- WP-A4 a model for dopant incorporation into silicon epitaxial films (1978) (0)
- Plasma Enhanced Chemical Vapor Deposition of Blanket TiSi2 on Oxide Patterned Wafers. Part 2. Silicide Properties. (1992) (0)
- Plasma Enhanced Chemical Vapor Deposition of Blanket TiSi2 on Oxide Patterned Wafers. Part 1. Growth of Silicide. (1992) (0)
- An Evaluation of Three Dimensional Integration Technology (2013) (0)
- IIIB-6 the impact of low-temperature (Tdep≤ 800°C) silicon epitaxy deposition conditions on bipolar transistor characteristics (1987) (0)
- Titanium Silicide Films Deposited by Low Pressure Chemical Vapor Deposition (1984) (0)
- Improvement of Gaas Crystal Quality on Si Grown by Mocvd Through Two-Dimensional-Like Nucleation with Low Temperature in Situ Hydrogen/Arsine Plasma Cleaning (1990) (0)
- Real-time Monitoring and Control of Silicon Epitaxy Using Emission Fourier Transform Infrared Spectroscopy (1993) (0)
- United States Patent (2017) (0)
- Deposition and Characterization of Silicon-Germanium Alloy Thin Films on Oxide (1996) (0)
- Wafer Bow Effect on Copper Wafer Bonding (2006) (0)
- Deposition for Microelectronics—Plasma Enhanced Chemical Vapor Deposition (1988) (0)
- Alternative Chemistries for Wafer Patterning Personnel (2002) (0)
- ication in Low- ssur (1987) (0)
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