Lau Wai Shing
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Hong Kong electrical engineer
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Lau Wai Shingengineering Degrees
Engineering
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#8841
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Electrical Engineering
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#3005
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Applied Physics
#3451
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#3551
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Engineering
Lau Wai Shing's Degrees
- Masters Electrical Engineering Hong Kong Polytechnic University
- PhD Electrical Engineering City University of Hong Kong
Why Is Lau Wai Shing Influential?
(Suggest an Edit or Addition)According to Wikipedia, Lau Wai Shing , also known as Wai Shing Lau or Michael Lau, is a Hong Kong electrical engineer and materials scientist. He worked on both Si-based and III-V based microelectronics. Biography Lau was born in Hong Kong in 1955.
Lau Wai Shing's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Crystallized Si films by low‐temperature rapid thermal annealing of amorphous silicon (1989) (99)
- Infrared Characterization for Microelectronics (1999) (74)
- Detection of oxygen vacancy defect states in capacitors with ultrathin Ta2O5 films by zero-bias thermally stimulated current spectroscopy (2003) (62)
- Highly transparent and conducting zinc oxide films deposited by activated reactive evaporation (1987) (60)
- Stability of electrical properties of nitrogen-rich, silicon-rich, and stoichiometric silicon nitride films (1989) (50)
- Evidence that N2O is a Stronger Oxidizing Agent than O2 for the Post-Deposition Annealing of Ta2O5 on Si Capacitors (1997) (44)
- Detection of defect states responsible for leakage current in ultrathin tantalum pentoxide (Ta2O5) films by zero-bias thermally stimulated current spectroscopy (1997) (41)
- Mechanism of leakage current reduction of tantalum oxide capacitors by titanium doping (2007) (34)
- Trends in DRAM dielectrics (1997) (29)
- Characterization of Defect States Responsible for Leakage Current in Tantalum Pentoxide Films for Very-High-Density Dynamic Random Access Memory (DRAM) Applications (1995) (26)
- Strong Low-Frequency Noise in Polysilicon Emitter Bipolar Transistors with Interfacial Oxide due to Fluctuations in Tunneling Probabilities (1992) (23)
- Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate (1996) (23)
- Formation of Ohmic contacts in AlGaN/GaN HEMT structures at 500 degreeC by Ohmic contact recess etching (2009) (23)
- An Extended Unified Schottky-Poole-Frenkel Theory to Explain the Current-Voltage Characteristics of Thin Film Metal-Insulator-Metal Capacitors with Examples for Various High-k Dielectric Materials (2012) (23)
- A Comparison of Defect States in Tantalum Pentoxide (Ta2O5) Films after Rapid Thermal Annealing in O2 or N2O by Zero-Bias Thermally Stimulated Current Spectroscopy (1996) (23)
- Simultaneous space charge and conduction current measurements in solid dielectrics under high dc electric field (2006) (22)
- Surface smoothing effect of an amorphous thin film deposited by atomic layer deposition on a surface with nano-sized roughness (2014) (20)
- General theory of acceptor-oxygen-vacancy complex single donor in high-dielectric-constant metallic oxide insulators (2005) (19)
- A Comparison of the Selective Etching Characteristics of Conventional and Low-Temperature-Grown GaAs over AlAs by Various Etching Solutions (1996) (18)
- Effects of post-deposition anneal on the electrical properties of Si3N4 gate dielectric (2002) (16)
- Effective channel length measurement of metal-oxide-semiconductor transistors with pocket implant using the subthreshold current-voltage characteristics based on remote Coulomb scattering (2005) (14)
- The Characterization of Traps in Semi-Insulating Gallium Arsenide Buffer Layers Grown at Low Temperature by Molecular Beam Epitaxy with an Improved Zero-Bias Thermally Stimurated Current Technique (1991) (14)
- A study of the linearity between Ion and log Ioff of modern MOS transistors and its application to stress engineering (2008) (13)
- The Superiority of N 2O Plasma Annealing over O 2 Plasma Annealing for Amorphous Tantalum Pentoxide (Ta 2O 5) Films (1998) (12)
- Similarity between the first ionized state of the oxygen vacancy double donor in tantalum oxide and the first ionized state of the cadmium vacancy double acceptor in cadmium sulfide (2007) (10)
- The variation of the leakage current characteristics of W/Ta2O5/W MIM capacitors with the thickness of the bottom W electrode (2016) (10)
- Application of zero-temperature-gradient zero-bias thermally stimulated current spectroscopy to ultrathin high-dielectric-constant insulator film characterization (2006) (10)
- Mechanism of leakage current reduction of tantalum oxide capacitors by postmetallization annealing (2006) (10)
- True oxide electron beam induced current for low‐voltage imaging of local defects in very thin silicon dioxide films (1993) (9)
- Mechanism for improvement of n-channel metal-oxide-semiconductor transistors by tensile stress (2010) (9)
- An Improved Shift-and-Ratio Effective Channel Length Extraction Method for Metal Oxide Silicon Transistors with Halo/Pocket Implants (2003) (9)
- Effects of switching from (1 1 0) to (1 0 0) channel orientation and tensile stress on n-channel and p-channel metal-oxide-semiconductor transistors (2010) (9)
- Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si (2007) (9)
- The application of polyimide/silicon nitride dual passivation to AlxGa1-xN/GaN high electron mobility transistors (2008) (8)
- Quantitative imaging of local defects in very thin silicon dioxide films at low bias voltage by true oxide electron‐beam‐induced current (1995) (8)
- Application of Semiconducting Low Temperature Grown GaAs to Improve Laser Diodes Grown on Si Substrates (1996) (8)
- The Identification and Suppression of Defects Responsible for Electrical Hysteresis in Metal-Nitride-Silicon Capacitors (1990) (8)
- The Development of a Highly Selective KI/I2/H2O/H2SO4 Etchant for the Selective Etching of Al0.3Ga0.7As over GaAs (1997) (8)
- An explanation of the dependence of the effective saturation velocity on gate voltage in sub-0.1 µm metal-oxide-semiconductor transistors by quasi-ballistic transport theory (2008) (8)
- The application of the Smoluchowski effect to explain the current-voltage characteristics of high-k MIM capacitors (2017) (7)
- Multi-logic-Unit Processor: A Combinational Logic Circuit Evaluation Engine for Genetic Parallel Programming (2005) (7)
- Improvement of n-channel metal-oxide-semiconductor transistors by tensile stress despite increase in both on and subthreshold off currents (2008) (6)
- New developments in beam induced current methods for the failure analysis of VLSI circuits (1996) (6)
- AFM study on the surface morphologies of TiN films prepared by magnetron sputtering and Al 2 O 3 films prepared by atomic layer deposition (2018) (6)
- Anomalous narrow width effect in p-channel metal-oxide-semiconductor surface channel transistors using shallow trench isolation technology (2008) (6)
- Switching from ⟨110⟩ to ⟨100⟩ orientation increases both the on current and off current of p-channel metal-oxide semiconductor transistors (2008) (5)
- Reduced boron lateral ion channeling in very short p-channel transistors by switching from ⟨110⟩ to ⟨100⟩ channel orientation (2008) (5)
- Observation of halo implant from the drain side reaching the source side and vice versa in extremely short p-channel transistors (2010) (5)
- The Application of a Selective Etch to Conclusively Show the Surface Smoothing Effect of an Amorphous Thin Film Deposited by Atomic Layer Deposition (2017) (5)
- Surface Smoothing Effect of an Amorphous Thin Film Deposited by Chemical Vapor Deposition or Atomic Layer Deposition (2014) (5)
- The influence of temperature on electrical conduction and space charge in LDPE (2003) (5)
- Effects of thermal annealing on the charge localization characteristics of HfO2/Au/HfO2 stack (2016) (5)
- Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors (2009) (4)
- Control of ion bombardment energy in the low‐temperature deposition of highly transparent and conducting In2O3 and ZnO thin films by activated reactive evaporation (1988) (4)
- A comparison between the quasi-ballistic transport model and the conventional velocity saturation model for sub-0.1-μm mos transistors (2007) (4)
- Effect of Spacer Scaling on PMOS Transistors (2006) (4)
- Anomalous Narrow Width Effect in NMOS and PMOS Surface Channel Transistors Using Shallow Trench Isolation (2005) (4)
- Characteristics of GaAs MISFET devices using low-temperature-grown Al0.3Ga0.7As as gate insulator (1997) (4)
- Mechanism of I–V asymmetry of MIM capacitors based on high-k dielectric (2015) (4)
- Effective Channel Length Shortening and Mobility Increase of p-Channel Metal Oxide Semiconductor Transistors Resulting in Higher Drive Current Using Short Source–Drain Diffusion Length (2004) (4)
- Improving the Accuracy of Modified Shift-and-Ratio Channel Length Extraction Method Using Scanning Capacitance Microscopy (2004) (4)
- Surface Smoothing And Roughening Effects of High-k Dielectric Materials Deposited by Atomic Layer Deposition and Their Significance for MIM Capacitors Used in DRAM Technology (2019) (3)
- A New Mechanism of Symmetry of Current-Voltage Characteristics for High-k Dielectric Capacitor Structures (2012) (3)
- Effect of tensile stress on the various components of the off current of n-channel metal-oxide-semiconductor transistors (2007) (3)
- A comparison of various dielectric/metal sidewall diffusion barriers for Cu/porous ultra-low-K interconnect technology in terms of leakage current and breakdown voltage (2007) (3)
- The preparation and characterization of nearly hysteresis‐free metal‐nitride‐silicon capacitors on both p‐ and n‐type silicon substrates (1992) (3)
- Difficulty Involved to Observe the Surface Smoothing Effect of an Amorphous High-k Dielectric Thin Film Deposited by Atomic Layer Deposition on a Metastable Metal Film (2019) (3)
- An investigation on capacitance-trigger ESD protection devices for high voltage integrated circuits (2014) (3)
- Region of nearly constant off current versus gate length characteristics for sub-0.1 μm low power CMOS technology (2008) (3)
- Quantitative Detection of Oxygen Contamination Related Traps in Gallium Arsenide Epitaxial Layer Grown by Molecular Beam Epitaxy at Low Temperature (1993) (3)
- Evidence of recombination enhanced diffusion of impurities at low temperature into high-k dielectric with tantalum oxide as an example (2010) (2)
- A Radar for Ultra-thin High-k Dielectric Film: Zero-Bias Thermally Stimulated Current Spectroscopy (2006) (2)
- Effect of a trace of water vapor on Ohmic contact formation for AlGaN/GaN epitaxial wafers (2008) (2)
- Effective channel length increased due to switching from ≪110≫ to ≪100≫ orientation for PMOS transistors fabricated by 65 nm CMOS technology (2008) (2)
- Some Key Modifications of Theory Required to Understand the Leakage Current Mechanisms for MIM Capacitors used in Dram Technology (2020) (2)
- Highly conducting transparent undoped indium oxide films deposited below 100°C by activated reactive evaporation (1986) (2)
- WSiN cap for Ohmic contacts to n-GaN with better morphology (2005) (2)
- Engineering implication of the correlation between the leakage current in high-k dielectric materials and the electronic defect states detected by zero-bias thermally stimulated current spectroscopy (2018) (2)
- Improvement of subthreshold swing of n-channel transistor by uniaxial tensile stress due to a quantum mechanical mechanism instead of physical thinning (2009) (2)
- Application of an Extended Unified Schottky-Poole-Frenkel Model to High-k Capacitor Structures Used in Analog Integrated Circuit Technology (2013) (2)
- Mechanism B I-V Symmetry for MIM Capacitors Used in Microelectronics (2021) (2)
- Selection of gate length and gate bias to make nanoscale metal–oxide-semiconductor transistors less sensitive to both statistical gate length variation and temperature variation (2010) (2)
- Dry etching of AlxGa1-xN/GaN by CCl2F2 chemistry for device isolation (2005) (2)
- Enhanced Hot-Hole Induced Degradation of Strained p-Channel Metal Oxide Semiconductor Transistors in Complementary Metal Oxide Semiconductor Technology with 2.0 nm Gate Oxide (2005) (1)
- Mechanism of Difficulty to Study the Physics of Leakage Current Reduction by Nitridation of Silicon before High-k Dielectric Deposition Due to Change in Nucleation Characteristics (2012) (1)
- Surface Smoothing and Roughening Effects of High-K Dielectric Materials Deposited by Atomic Layer Deposition and Their Significance for MIM Capacitors Used in Dram Technology Part II (2020) (1)
- The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current (2012) (1)
- A hybridized genetic parallel programming based logic circuit synthesizer (2006) (1)
- Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga2O3 or Diamond (2020) (1)
- Mechanisms of Difficulty to Correlate the Leakage Current of High-k Capacitor Structures with Defect States Detected Spectroscopically by the Thermally Stimulated Current Technique (2019) (1)
- Physics of electron mobility independent of channel orientation in n-channel transistors based on (100) silicon wafers and its experimental verification (2010) (1)
- A new low-voltage contrast mechanism to image local defects in very thin silicon dioxide films: true oxide electron beam induced current (1993) (1)
- The proposal and application of the hole Smoluchowski effect to explain the current-voltage characteristics of high-k MIM capacitors (2018) (1)
- Mechanism of Difficulty to Study the Physics of Leakage Current Reduction by Nitridation of Silicon before High-k Dielectric Deposition due to Change in Nucleation Characteristics and Some Other Factors (1)
- A new mechanism of leakage current in ultra-shallow junctions with TiSi/sub 2/ contacts (1997) (1)
- STRUCTURAL AND OPTICAL PROPERTIES OF ZnO SYNTHESIZED BY TEMPERATURE GRADIENT THERMAL OXIDATION (2010) (1)
- The Characterization of Defect States Responsible for Leakage Current in Tantalum Pentoxide Films for Very High Density DRAM Applications (1994) (0)
- Numerical Simulation of Backgating Suppression in High Electron Mobility Transistors (HEMTs) with a Low Temperature Molecular Beam Epitaxy (MBE)-Grown Gallium Arsenide Buffer Layer between the Substrate and Active Layers (1994) (0)
- Mechanisms of Difficulty to Correlate the Leakage Current of High-k Capacitor Structures with Defect States Detected Spectroscopically by the Thermally Stimulated Current Technique (2019) (0)
- Mechanism of Reverse Leakage Current in Schottky Diodes Involving Velocity Overshoot (2021) (0)
- Two types of local oxide/substrate defects in very thin silicon dioxide films on silicon (1995) (0)
- Mechanisms of Difficulty to Correlate the Leakage Current of High-k Capacitor Structures with Defect States Detected Spectroscopically by the Thermally Stimulated Current Technique (2018) (0)
- Reduced Hot-Carrier Induced Degradation of NMOS I/O Transistors with Sub-micron Source-Drain Diffusion Length for 0.11 µm Dual Gate Oxide CMOS Technology (2004) (0)
- A Unified Schottky-Poole-Frenkel Model for Capacitor Structures Involving High-k Dielectric Materials (2012) (0)
- Some examples of the application of a unified Schottky-Poole-Frenkel theory to high-k dielectric capacitor structures (2013) (0)
- Experimental Observation of Poole-Frenkel Saturation in an Ultrathin Tantalum Oxide Capacitor Structure (2013) (0)
- An Extended Unified Schottky-Poole-Frenkel Theory to Explain the Current-Voltage Characteristics of Capacitors Using High-k Dielectric Materials (2012) (0)
- High spatial resolution mapping of strain induced by the geometry configuration in nanoscaled devices (2006) (0)
- A mechanism of increase in the on-current and offcurrent due to a slightly smaller spacer in state-of- the-art p-channel MOS transistors during manufacturing (2005) (0)
- The Application of LAU's Schottky-Poole-Frenkel Theory to Distinguish Leakage Current Mechanisms in High-K MIM Capacitors by Pattern Recognition (2022) (0)
- THE CHARACTERIZATION OF SILICON DIOXIDE AND SILICON NITRIDE THIN FILMS (1999) (0)
- Confirmation of the Correlation between the Electrical Hysteresis and Silicon Dangling Bond Density in Silicon Nitride by UV Irradiation of Nearly Hysteresis Free Metal-Nitride-Silicon Capacitors (1991) (0)
- Various Methods to Reduce Defect States in Tantalum Oxide Capacitors for DRAM Applications (2005) (0)
- A New Mechanism of Symmetry of Current-Voltage Characteristics for High-k Dielectric Capacitor Structures (2018) (0)
- A-3-3 Ultrathin Nitride / Oxide Stack Gate Dielectric ( 14 . 94 to 20 . 3 A ) for Sub-0 . 1 . 3 pmCMOS and Beyond (0)
- Two Step O 2 /N 2 O Plasma Annealing for the Reduction of Leakage Current in Amorphous Ta 2 O 5 Films (1999) (0)
- Potential of a Sensitive Silicon Mechanical Stress Sensor Based on a Change in Gate-Induced-Drain Leakage Current (2011) (0)
- Simultaneous Space Charge and Current Density Assessment in Additive-free LDPE under HVDC Condition (2003) (0)
- THE CHARACTERIZATION OF PSG, BPSG, SOG AND OTHER GLASSES (1999) (0)
- Mechanisms of Difficulty to Correlate the Leakage Current of High-k Capacitor Structures with Defect States Detected Spectroscopically by the Thermally Stimulated Current Technique (2018) (0)
- The Development of a New Ion Versus Log(Ig) Plot to Characterize Depletion-Mode High Electron Mobility Transistors with the Insertion of a Very Thin Evaporated Al Layer to AlGaN/GaN High Electron Mobility Transistors as an Example (2020) (0)
- THE CHARACTERIZATION OF AMORPHOUS SILICON AND RELATED MATERIALS (1999) (0)
- Ultrathin Nitride/Oxide Stack Gate Dielectric (14.9Å to 20.3Å) for Sub-0.13 μm CMOS and Beyond (2001) (0)
- ANOMALOUS NARROW WIDTHEFFECTIN NMOS AND PMOS SURFACECHANNEL TRANSISTORSUSINGSHALLOW TRENCH ISOLATION (2005) (0)
- CMOS Switching Speed Characterization and An Overview Regarding How to Speed Up CMOS (2017) (0)
- A New Mechanism of Symmetry of Current-Voltage Characteristics for High-k Dielectric Capacitor Structures (2018) (0)
- Impacts of Buffer Oxide Layer in Nitride/Oxide Stack Gate Dielectrics on the Device Performance and Dielectric Reliability (2002) (0)
- A Study of Polysilicon Gate Etch Uniformity in 300 mm Silicon Wafers (2013) (0)
- The Effect of Interfacial and Bulk Free Energies on the Leakage Current vs Voltage Charcteristics of High-K MIM Capacitors Prepared by Atomic Layer Deposition (2022) (0)
- Confirmation of the surface smoothing effect of atomic layer deposition and the physical mechanism responsible for such an effect (2016) (0)
- Physical Mechanisms regarding Why It Is Difficult to Correlate the Leakage Current of Capacitor Structures Involving High-K Dielectric Materials and Defect States Detected Spectroscopically by the Thermally Stimulated Current Technique (2011) (0)
- Efficient Detection of Oxygen Vacancy Double Donors in Capacitors with Ultra-thin Ta 2 O 5 Films for DRAM Applications by Zero-bias Thermally Stimulated Current Spectroscopy (2005) (0)
- SEMCONDUCTOR FILM HAVING A SINGLE-CRYSTAL LIKE REGION WITH NO GRAIN BOUNDARY (2017) (0)
- ULSI Front-End Technology:Covering from the First Semiconductor Paper to CMOS FINFET Technology (2017) (0)
- Effects of Externally Applied Uniaxial Tensile Stress on Gate Induced Drain Leakage (GIDL) Current of Metal-Oxide-Semiconductor Transistors (2011) (0)
- Mechanism behind the stress‐induced change in boron and arsenic diffusion in silicon devices and its experimental verification (2011) (0)
- The Development of Zero-temperature-gradient Zero-bias Thermally Stimulated Current (ZTGZBTSC) Spectroscopy Technique for the Detection of Defect States in Ultra-thin High-k Dielectric Films (2006) (0)
- Mechanisms of Difficulty to Correlate the Leakage Current of High-k Capacitor Structures with Defect States Detected Spectroscopically by the Thermally Stimulated Current Technique (2018) (0)
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