Leo Esaki
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Most Influential Person Now
Japanese physicist
Leo Esaki's AcademicInfluence.com Rankings
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Physics
Leo Esaki's Degrees
- Bachelors Physics University of Tokyo
- PhD Physics University of Tokyo
Why Is Leo Esaki Influential?
(Suggest an Edit or Addition)According to Wikipedia, Reona Esaki , also known as Leo Esaki, is a Japanese physicist who shared the Nobel Prize in Physics in 1973 with Ivar Giaever and Brian David Josephson for his work in electron tunneling in semiconductor materials which finally led to his invention of the Esaki diode, which exploited that phenomenon. This research was done when he was with Tokyo Tsushin Kogyo . He has also contributed in being a pioneer of the semiconductor superlattices.
Leo Esaki's Published Works
Published Works
- Superlattice and negative differential conductivity in semiconductors (1970) (2678)
- Tunneling in a finite superlattice (1973) (1906)
- Resonant tunneling in semiconductor double barriers (1974) (1569)
- New Phenomenon in Narrow Germanium p-n Junctions (1958) (1222)
- Variational calculations on a quantum well in an electric field (1983) (623)
- New Transport Phenomenon in a Semiconductor "Superlattice" (1974) (555)
- Exciton binding energy in quantum wells (1982) (535)
- A new semiconductor superlattice (1977) (486)
- A bird's-eye view on the evolution of semiconductor superlattices and quantum wells (1986) (310)
- Effect of an electric field on the luminescence of GaAs quantum wells (1982) (233)
- InAs-GaSb superlattice energy structure and its semiconductor-semimetal transition (1978) (200)
- Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures (1985) (196)
- Molecular‐beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy (1977) (191)
- In1−xGaxAs‐GaSb1−yAsy heterojunctions by molecular beam epitaxy (1977) (168)
- Electronic properties of InAsGaSb superlattices (1980) (157)
- Optical absorption of In1−xGaxAsGaSb1−yAsy superlattices (1978) (144)
- New Type of Negative Resistance in Barrier Tunneling (1966) (136)
- Resonant tunneling of holes in AlAs-GaAs-AlAs heterostructures (1985) (135)
- Long Journey into Tunneling (1974) (133)
- The Growth of a GaAs–GaAlAs Superlattice (1973) (131)
- Optical and Electrical Properties and Band Structure of GeTe and SnTe (1968) (129)
- Shubnikov—de Haas Oscillations in a Semiconductor Superlattice (1977) (118)
- Structures Grown by Molecular Beam Epitaxy (1973) (113)
- A new device using the tunneling process in narrow p-n junctions (1960) (106)
- X-ray diffraction study of a one-dimensional GaAs–AlAs superlattice (1977) (105)
- Magnetointernal Field Emission in Junctions of Magnetic Insulators (1967) (102)
- Electron Energy-Loss Spectroscopy of GaAs and Ge Surfaces (1974) (100)
- Polytype Superlattices and Multi-Heterojunctions (1981) (97)
- Discovery of the tunnel diode (1976) (93)
- Observation of semiconductor‐semimetal transition in InAs‐GaSb superlattices (1979) (92)
- A new one-dimensional quantum well structure (1985) (89)
- Effects of Quantum States on the Photocurrent in a (1975) (87)
- Semiconductor superfine structures by computer-controlled molecular beam epitaxy (1976) (84)
- Raman scattering in GaSb‐AlSb strained layer superlattices (1985) (81)
- Nonlinear Optical Response of Conduction Electrons in a Superlattice (1971) (79)
- Light and Heavy Valence Subband Reversal in GaSb/AlSb Superlattices, (1984) (77)
- Two-dimensional electronic structure in InAs-GaSb superlattices☆☆☆ (1978) (77)
- New Phenomenon in Magnetoresistance of Bismuth at Low Temperature (1962) (71)
- Cyclotron Resonance and Far-Infrared Magneto-Absorption Experiments on Semimetallic InAs-GaSb Superlattices, (1980) (68)
- Resonant Raman Scattering in a Semiconductor Superlattice (1976) (66)
- High-magnetic-field transport in a dilute two-dimensional electron gas (1983) (64)
- Electron Tunneling between a Metal and a Semiconductor: Characteristics of Al‐Al2O3‐SnTe and −GeTe Junctions (1967) (62)
- Ga1−x Alx As superlattices profiled by Auger electron spectroscopy (1974) (61)
- Three-dimensional character of semimetallic InAs-GaSb superlattices (1981) (60)
- Disorder-Activated Acoustic Mode in Raman Spectrum of Ga x Al 1-x As (1972) (58)
- Excess Noise in Narrow Germanium p-n Junctions (1958) (58)
- Ion backscattering and channeling study of InAs‐GaSb superlattices (1980) (53)
- Smooth and coherent layers of GaAs and AlAs grown by molecular beam epitaxy (1976) (49)
- Vacancy Association of Defects in Annealed GaAs (1971) (49)
- Ion-beam crystallography of InAs-GaSb superlattices (1982) (48)
- InAs-GaSb superlattices-synthesized semiconductors and semimetals (1981) (48)
- Observation of Superlattice Effects on the Electronic Bands of Multilayer Heterostructures (1981) (47)
- Molecular beam epitaxy of AlSb (1982) (45)
- Stark shifts in GaAs/GaAlAs quantum wells studied by photoluminescence spectroscopy (1987) (45)
- Tunneling in solids (2014) (44)
- Study of Electronic Band Structures by Tunneling Spectroscopy: Bismuth (1965) (43)
- Profiling of periodic structures (GaAs–GaAlAs) by nuclear backscattering (1973) (42)
- Luminescence from InAsGaSb superlattices (1981) (41)
- Semiconductor Quantum Heterostructures (1992) (40)
- Semimetallic InAs-GaSb Superlattices to the Heterojunction Limit, (1981) (39)
- Densities and mobilities of coexisting electrons and holes in GaSb/InAs/GaSb quantum wells (1986) (39)
- A new mechanism for negative differential conductivity in superlattices (1975) (39)
- Highlights in Condensed Matter Physics and Future Prospects (1991) (39)
- Quantized hall effect in single quantum wells of InAs (1984) (35)
- Carrier densities in InAs–Ga(Al)Sb(As) quantum wells (1987) (33)
- Electron spectroscopy of GaAs and AlAs surfaces (1975) (33)
- Studies by cross‐sectional transmission electron microscope of InAs grown by molecular beam epitaxy on GaAs substrates (1980) (32)
- Self‐consistent calculations in InAs–GaSb heterojunctions (1982) (31)
- Shubnikov-De Haas oscillations under tilted magnetic fields in InAs-GaSb superlattices (1982) (31)
- Ge‐GaAs superlattices by molecular beam epitaxy (1981) (31)
- Molecular beam epitaxy of alternating metal-semiconductor films (1973) (31)
- Optoelectronic devices based on type II polytype tunnel heterostructures (1992) (30)
- Spatial separation of carriers in InAs–GaSb superlattices (1981) (30)
- Optical properties of semiconductor superlattice (1975) (30)
- Semiconductor superlattices by MBE and their characterization (1980) (30)
- Observation of double cyclotoron resonance and interband transitions in InAs-GaSb multi-heterojunctions (1982) (27)
- Resonance enhanced umklapp Raman processes in GaAs-Ga1−xAlxAs superlattices (1978) (27)
- Fractional quantum Hall effect in a two-dimensional hole system (1984) (27)
- Semiconductor Superlattices and Quantum Wells (1985) (25)
- Electron densities in InAs–AlSb quantum wells (1984) (25)
- Semiconductor superlattices in high magnetic fields (1979) (25)
- Fractionally quantized Hall effect in two-dimensional systems of extreme electron concentration (1984) (24)
- Optical properties of GaSb–AlSb superlattices (1983) (24)
- Optical properties of GeTe (1967) (23)
- Magnetic field-induced semimetal-to-semiconductor transition in InAs-GaSb superlattices (1980) (23)
- Luminescence Spectra of Europium Chalcogenides: EuO, EuS, and EuSe (1970) (22)
- Electronic properties of InAs_GaSb superlattices (1980) (21)
- The evolution of nanoscale quantum effects in semiconductor physics (1999) (21)
- Tunnel triode—a tunneling base transistor (1977) (20)
- Photoconductivity and optical properties of amorphous GeTe (1970) (20)
- Optical transmission in GaSb–AlSb superlattices (1983) (20)
- Effect of lattice mismatch on the electron mobilities of InAs grown on GaAs by MBE (1980) (20)
- Far infrared impurity absorption in a quantum well (1983) (19)
- BiSb Alloy Tunnel Junctions (1966) (19)
- Properties of Thermally Treated Germanium (1953) (18)
- New Phenomenon in Semiconductor Junctions—GaAs Duplex Diodes (1970) (18)
- Experimental and Theoretical Physics. (1972) (18)
- Molecular beam epitaxy of Ge–GaAs superlattices (1981) (18)
- Observation of an Atomlike Energy Spectrum with LargegValues by Tunneling Spectroscopy (1968) (17)
- Esaki diode is still a radio star, half a century on (2010) (17)
- Superfine structures of semiconductors grown by molecular‐beam epitaxy (1976) (15)
- HIGH‐FIELD PHOTOCONDUCTIVITY OF AMORPHOUS GeTe and GeSe FILMS (1970) (14)
- The interface transport properties of Ge-GaAs heterojunctions (1964) (14)
- THE FIELD‐EFFECT INTERFACE CONDUCTANCE IN Ge—GaAs n‐n HETEROJUNCTIONS (1964) (14)
- Photoconductivity in Disordered Nickel-Oxide Films (1969) (14)
- The Wonder of Nanotechnology: Quantum Optoelectronic Devices and Applications (2013) (14)
- Cyclotron-resonance and Shubnikov-deHaas experiments in a N-InAs-GaSb super-lattice (1982) (14)
- New Phenomenon in Semimetals and Semiconductors (1965) (13)
- Energy levels in quasi uni-dimensional semiconductor heterostructures (1987) (13)
- GaSbAlSbInAs multi-heterojunctions (1983) (13)
- Electrical Resistivity and Thermionic Emission of Silicon (1953) (13)
- Observation of the superconducting energy gap in a semiconductor (GeTe) (1966) (12)
- Do-it-yourself quantum mechanics in low-dimensional structures (1992) (11)
- Optical spectroscopy of GaAsGaAlAs quantum wells under an external electric field (1987) (11)
- Raman scattering in the depletion region of GaAs (1974) (10)
- Superlattice umklapp processes in resonant Raman scattering (1978) (10)
- ADVANCES IN SEMICONDUCTOR SUPERLATTICES, QUANTUM WELLS AND HETEROSTRUCTURES (1984) (10)
- ELECTRON TUNNELING FROM METAL TO InSb (1966) (10)
- Weak localization of two-dimensional conduction holes (1984) (10)
- Computer-Controlled Molecular Beam Epitaxy (1973) (9)
- Electric field-induced quenching of luminescence in quantum wells (1983) (9)
- Electron and hole cyclotron resonance in semimetallic GaSb/InAs/GaSb quantum wells (1988) (9)
- Magnetic-field-induced transitions in InAs/Ga1−xAlxSb heterostructures (1988) (9)
- Characterization of Tunnel Diode Performance in Terms of Device Figure of Merit and Circuit Time Constant (1962) (9)
- Spectroscopic studies of strained-layer GaSbAlSb superlattices (1990) (9)
- Interband transitions from the photoreflectance of GaSb/AlSb multiple quantum wells (1989) (9)
- InAs-GaSb superlattices — synthesized narrow-gap semiconductors and semimetals (1980) (8)
- Semiconductor Superlattices and Quantum Wells through Development of Molecular Beam Epitaxy (1985) (8)
- Implications of Semiconductor Superlattice Research (1991) (8)
- Magnetic Field Effects on InSb Tunnel Diodes (1962) (8)
- Magneto-optical absorption in GaSbAlSb superlattices (1986) (7)
- Electron barriers in AI-AI 2 O 3 -SnTe and AI-AI 2 O 3 -GeTe tunnel junctions (1966) (7)
- Investigations of the quantum photovoltaic effect in InAs‐GaSb semiconductor superlattices (1988) (6)
- THE EVOLUTION OF SEMICONDUCTOR SUPERLATTICES AND QUANTUM WELLS (1989) (6)
- THE EVOLUTION OF QUANTUM STRUCTURES (1987) (6)
- Summary Abstract: Resonant tunneling of holes in quantum well heterostructures (1985) (6)
- Study of the cancellation of the lattice mismatch in GaSb-AlSb superlattices (1986) (6)
- Segregated AlGaAs(110) grown by molecular beam epitaxy (1986) (5)
- The Evolution of Semiconductor Quantum Structures Do-It-Yourself Quantum Mechanics (2015) (5)
- Nanostructures: Physics and Technology 8th International Symposium (2000) (5)
- InAs-GaSb Superlattices in High Magnetic Fields (1981) (5)
- Puteshestvie v stranu tunnelirovaniya (1975) (5)
- Electron transport in Nb-Nb oxide-Bi tunnel junctions (1971) (5)
- IIIA-5 direct-indirect transitions in GaSb-AlSb superlattices (1983) (4)
- ELECTRONS AND HOLES IN InAs-Ga (Al) Sb (As) QUANTUM WELLS (1987) (4)
- RESONANT ELECTRON TRANSPORT IN SEMICONDUCTOR BARRIER STRUCTURES (1974) (4)
- Phonon-Assisted Tunneling in Bismuth Tunnel Junctions (1968) (4)
- Oscillator strengths of interband magneto-optical transitions in strained-layer heterostructures (1988) (4)
- One- and zero-dimensional systems: Fabrication and characterization (1989) (3)
- What did I explore in half a century of research?: What discovery, what invention, where, when? (2015) (3)
- GeTe–GaAs Tunnel Junction: A Negative‐Resistance Schottky‐Type Barrier (1968) (3)
- Advances in synthesized superlattices (1982) (3)
- On the Thoria Coated Cathode (1950) (3)
- Ultimate FET structures (1965) (3)
- Transient photovoltaic effect in InAs-GaSb superlattices (1986) (3)
- Application of the Kohn-Sham formalism to quantum dots with realistic dimensions and constrictions (1992) (3)
- Abstract: New semiconductor heterostructures (1978) (3)
- Investigations of the band line-up in semimetallic InAsGaSb superlattices under hydrostatic pressure (1986) (3)
- Thermal Treatment of Silicon Rectifiers (1953) (3)
- Resonant Raman Scattering in GaSb-AlSb Superlattices (1985) (3)
- Summary Abstract: A perspective in development of synthesized semiconductor superlattices (1983) (2)
- The electronic properties of the miniband and the effect of external electric fields in superlattices (1990) (2)
- The Evolution of Semiconductor Quantum Structures in Reduced Dimensionality—Do-It-Yourself Quantum Mechanics (1990) (2)
- Esaki diodes live and learn (2010) (2)
- Direct Determination of the Scattering Time in Bismuth and Antimony‐Bismuth Crystals at Low Temperatures (1963) (2)
- New horizons in semimetal alloys (1966) (2)
- Abstract: Observation of semiconductor–semimetal transition in InAs–GaSb superlattices (1979) (2)
- Semiconductor Devices in Perspective — Discovery of and Recent Developments in Tunneling Devices (1978) (2)
- Conductivity and Electronic Energy State of Thoria Coated Cathode (1950) (2)
- THE BIRTH OF THE SEMICONDUCTOR SUPERLATTICE (1995) (2)
- 1 – HISTORY AND PERSPECTIVE OF SEMICONDUCTOR SUPERLATTICES (1985) (2)
- Theory of stability in a nonlinear resistive network (1992) (2)
- Nanostructures: Physics and Technology International Symposium (9th), St. Petersburg, Russia, June 18-22, 2001 Proceedings (2001) (1)
- A k.p BAND MODEL FOR GeTe AND SnTe (1968) (1)
- Measurement of the subband widths in semimetallic InAs-GaSb superlattices (1982) (1)
- Highlights in Semiconductor Device Development. (1981) (1)
- Optical Spectroscopy of Excitons in Quantum Wells Under an Electric Field (1988) (1)
- Quantum-State Spectroscopy in Quantum Wires and Quantum Dots (1990) (0)
- MBE (Molecular Beam Epitaxy) Growth Technique for Matching Superlattices Grown on GaAs Substrates. (1984) (0)
- The Evolution of Semiconductor Superlattices and Other Quantum Structures (1992) (0)
- Low-Temperature Magnetotransport in InAs-GaSb Quantum Wells (1985) (0)
- In Half aCentury of Research Career, What did I Explore? (2010) (0)
- Molecular beam epitaxy and device for its implementation (1978) (0)
- Fowler-Nordheim tunneling in Al-Al 2 O 3 -SnTe junctions (1966) (0)
- Semiconductor Devices and the Role of Physics in their Development (1982) (0)
- United States Patent ( 113 , 626 , 328 72 ) Inventors (2017) (0)
- International Symposium on Nanostructures: Physics and Technology (10th), held on 17-21 June 2002 at St. Petersburg, Russia (2005) (0)
- Advances in Semiconductor Superlattices and Quantum Wells (1986) (0)
- Magnetic tunnel junctions (1967) (0)
- On the Secondary Electron Emission from the Thoria Coated Cathode and the Thin Film Deposited by Evaporation from the Cathode (1951) (0)
- A Perspective in Quantum-Structure Development (1987) (0)
- Basic theory and application of tunnel diodes: Sylvester P. Gentile: Van Nostrand, New York, 1962. pp. 295. $9.00 (1964) (0)
- TEMPERATURE DEPENDENCE OF SHUBNIKOV-DE HAAS OSCILLATIONS IN AN InAs-GaSb QUANTUM WELL. (1984) (0)
- High Pressure Optical Studies of GaSb-AlSb Multiple Quantum Wells (1989) (0)
- Word of welcome (1980) (0)
- Resonant Magnetotunneling in Type II Heterostructures (1991) (0)
- Optical spectroscopy of excitons in quantum wells (1988) (0)
- Arrangement for generating electromagnetic waves (1973) (0)
- Quantum wells of InAs between AlSb (1984) (0)
- System and growth process by molecular beam epitaxial with introduction of hydrogen (1978) (0)
- Monolithic semiconductor superlattice structure. (1986) (0)
- Innovation and Evolution ( Reflections on a Life in Science ... ) (1998) (0)
- Injection Laser Structures with a Periodic Active Region. (1978) (0)
- Welcoming remarks about the Janus phenomenon in science. (1997) (0)
- Investigation of Novel Tunneling Phenomena in Semiconductors. (1977) (0)
- MIOMD-XI Infrared Optoelectronics: Materials and Devices (2012) (0)
- Twenty Years of Semiconductor Superlattice Research (1992) (0)
- 11p-F-1 EXPLORATORY INVESTIGATION FOR QUANTUM EFFECTS IN SEMICONDUCTOR HETEROSTRUCTURES (1977) (0)
- CYCLOTRON RESONANCE IN AN mAe—GaSh SUPERLAT'flCE (1979) (0)
- The evolution of semiconductor superlattices and quantum nanos- tructures (2001) (0)
- Characteristics of electron tunneling in metal-insulator-degenerate semiconductor junctions (1967) (0)
- Magneto-optical absorption in GaSb-AlSb superlattices (1986) (0)
- Investigation of Quantum Effects in Heterostructures. (1981) (0)
- Abstract: Crystallography of InAs–GsSb superlattices by Rutherford backscattering and channeling (1979) (0)
- Physicists to be Honored at the Joint APS / AAPT Spring 1998 Meeting 1998 (0)
- Nanostructures: Physics and Technology International Symposium (6th) held in St. Petersburg, Russia on June 22-26, 1998 Proceedings (1998) (0)
- Fast, transistoraehnliches semiconductor component- (1978) (0)
- EXPERIMENTAL INVESTIGATIONS OF THE QUANTUM PHOTOVOLTAIC EFFECT IN InAs-GaSb SEMICONDUCTOR SUPERLATTICES (1987) (0)
- Device has semiconductor transistor type heterojunction high speed (1978) (0)
- Reflections on My Fifty Years in Research during a Time of Great Change (2002) (0)
- The evolution of semiconductor (2001) (0)
- The Superlattice Story with the Esaki Tunnel Diode (2006) (0)
- Nanostructures: Physics and Technology International Symposium (8th) Held in St. Petersburg, Russia on June 19-23, 2000 Proceedings (2000) (0)
- A New Type of Superlattice. (1978) (0)
- Fractional Hall Quantization of Two-Dimensional Holes in Gaas-GaAlAs Heterostructures (1985) (0)
- The Evolution of Semiconductor Quantum Structures. Do-It-Yourself Quantum Mechanics (1993) (0)
- A calculation of the carrier distribution in the p-n junctions at high injection level (1963) (0)
- Frontispiece: 1973 nobel laureates in physics (1974) (0)
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