Leonard Feldman
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Physics
Leonard Feldman's Degrees
- PhD Physics Stanford University
- Bachelors Physics California Institute of Technology
Why Is Leonard Feldman Influential?
(Suggest an Edit or Addition)According to Wikipedia, Leonard Cecil Feldman is an American materials physicist. He gained his B.A. degree in 1961 from Drew University and his Ph.D. from Rutgers University in 1967. He then joined AT&T Bell Laboratories, working on semiconductor materials physics. In 1996 he assumed the position of Stevenson Professor of Physics at Vanderbilt University and Distinguished Visiting Scientist at Oak Ridge National Laboratory.
Leonard Feldman's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- Fundamentals of Surface and Thin Film Analysis (1986) (1052)
- Materials analysis by ion channeling (1982) (732)
- GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy (1984) (578)
- Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide (2001) (518)
- Clustering on surfaces (1992) (512)
- Observation of long-range exciton diffusion in highly ordered organic semiconductors. (2010) (414)
- Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide (2000) (378)
- Electronic thin film science : for electrical engineers and materials scientists (1996) (336)
- Size effects in the structural phase transition of VO2 nanoparticles (2002) (291)
- Semiconductor to metal phase transition in the nucleation and growth of VO2 nanoparticles and thin films (2004) (291)
- Homogeneously alloyed CdSxSe1-x nanocrystals: synthesis, characterization, and composition/size-dependent band gap. (2006) (277)
- Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxy (1991) (236)
- Modified Deal Grove model for the thermal oxidation of silicon carbide (2004) (217)
- SiO2 film thickness metrology by x-ray photoelectron spectroscopy (1997) (213)
- Synthesis, Surface Studies, Composition and Structural Characterization of CdSe, Core/Shell, and Biologically Active Nanocrystals. (2007) (202)
- Rapid tarnishing of silver nanoparticles in ambient laboratory air (2005) (200)
- Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxy (1984) (195)
- Positron-annihilation momentum profiles in aluminum: Core contribution and the independent-particle model (1977) (195)
- Structural basis for near unity quantum yield core/shell nanostructures. (2006) (194)
- Pentacene ultrathin film formation on reduced and oxidized Si surfaces (2003) (186)
- Gold nanostar substrates for SERS-based chemical sensing in the femtomolar regime. (2014) (177)
- DEPTH PROFILES OF THE LATTICE DISORDER RESULTING FROM ION BOMBARDMENT OF SILICON SINGLE CRYSTALS. (1970) (171)
- New uses of ion accelerators (1975) (163)
- Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen. (2007) (162)
- Photoinduced phase transition in VO2 nanocrystals: ultrafast control of surface-plasmon resonance. (2004) (162)
- Size-dependent optical properties of VO2 nanoparticle arrays. (2004) (161)
- Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC (2009) (150)
- Epitaxial ferromagnetic Mn5Ge3 on Ge(111) (2003) (149)
- Dynamic scaling, island size distribution, and morphology in the aggregation regime of submonolayer pentacene films. (2003) (148)
- Ion-beam-induced hydrogen release from a-C:H: A bulk molecular recombination model (1989) (139)
- Synthesis and characterization of size-controlled vanadium dioxide nanocrystals in a fused silica matrix (2002) (138)
- Biological control of aragonite formation in stony corals (2017) (134)
- Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface (2003) (128)
- Fundamental issues in heteroepitaxy—A Department of Energy, Council on Materials Science Panel Report (1990) (127)
- Calculation of the backscattering-channeling surface peak (1978) (124)
- Rapid thermal oxidation of silicon in N2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness (1994) (121)
- Commensurate and incommensurate structures in molecular beam epitaxially grown GexSi1−xfilms on Si(100) (1984) (118)
- Ge‐Si layered structures: Artificial crystals and complex cell ordered superlattices (1986) (118)
- Reconstruction of the W (001) Surface and Its Reordering by Hydrogen Adsorption, Studied by MeV Ion Scattering (1979) (118)
- Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures (2000) (112)
- Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs (2011) (112)
- Confocal Raman microscopy across the metal-insulator transition of single vanadium dioxide nanoparticles. (2009) (106)
- Mitochondria Protection after Acute Ischemia Prevents Prolonged Upregulation of IL-1β and IL-18 and Arrests CKD. (2017) (104)
- Chemical properties of oxidized silicon carbide surfaces upon etching in hydrofluoric acid. (2009) (98)
- Magnetism in Mn x Ge 1-x semiconductors mediated by impurity band carriers (2005) (97)
- Giant enhancement of luminescence intensity in Er‐doped Si/SiO2 resonant cavities (1992) (96)
- Si(001) SURFACE STUDIES USING HIGH ENERGY ION SCATTERING (1980) (95)
- Cross sections for L-subshell ionization in Au by the collision of protons and helium ions (1974) (94)
- Doping of Conjugated Polythiophenes with Alkyl Silanes (2009) (94)
- Thin film processing and characterization of high-temperature superconductors; Proceedings of the Topical Conference, Anaheim, CA, Nov. 6, 1987 (1988) (94)
- Temperature-controlled surface plasmon resonance in VO (2) nanorods. (2002) (93)
- Fundamentals of Nanoscale Film Analysis (2007) (91)
- High resolution ion scattering study of silicon oxynitridation (1996) (90)
- Surface Scattering from W Single Crystals by MeV He + Ions (1977) (90)
- Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC (2003) (90)
- Use of Thin Si Crystals in Backscattering-Channeling Studies of the Si-SiO 2 Interface (1978) (89)
- Enhanced hysteresis in the semiconductor-to-metal phase transition of VO2 precipitates formed in SiO2 by ion implantation (2001) (89)
- Atomic Displacements in the Si(111)-(7×7) Surface (1980) (88)
- Materials Analysis by Ion Channeling: Submicron Crystallography (2012) (88)
- Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation (2013) (86)
- Hydrogen adsorption on Si(111)–(7×7) (1982) (83)
- Dopant segregation and giant magnetoresistance in manganese-doped germanium (2007) (81)
- The influence of reconstruction on epitaxial growth: Ge on Si(100)-(2 × 1) and Si(111)-(7 × 7) (1985) (81)
- Two-dimensional current percolation in nanocrystalline vanadiumdioxide films (2006) (80)
- High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer (2013) (80)
- Dislocation arrangements in pentacene thin films (2004) (78)
- Transition structure at the Si(100)-SiO2 interface. (2003) (73)
- Oscillatory relaxation of the Ag(110) surface (1984) (72)
- Atomic structure at the (111) Si‐SiO2 interface (1982) (70)
- Single Atomic Vacancy Catalysis. (2019) (70)
- Interface passivation for silicon dioxide layers on silicon carbide (2005) (70)
- Radiation Induced Charge Trapping in Ultrathin ${\rm HfO}_{2}$-Based MOSFETs (2007) (70)
- Physics and chemistry of silicon wafer bonding investigated by infrared absorption spectroscopy (1996) (68)
- Interface trap passivation for SiO2∕(0001¯) C-terminated 4H-SiC (2005) (68)
- Modulated optical transmission of subwavelength hole arrays in metal-VO2 films (2006) (68)
- Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(112̄0) 4H–SiC interface (2004) (68)
- Evidence of Annealing Effects on a High-Density Si/SiO2 Interfacial Layer (1997) (67)
- Epitaxy of Au on Ag(111) studied by high-energy ion scattering (1981) (66)
- A Molybdenum Dithiolene Complex as p-Dopant for Hole-Transport Materials: A Multitechnique Experimental and Theoretical Investigation (2010) (64)
- Mechanically and thermally stable Si‐Ge films and heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition at 900 °C (1991) (64)
- Ni on Si(111): Reactivity and Interface Structure (1980) (63)
- Desorption of H from Si(111) by Resonant Excitation of the Si-H Vibrational Stretch Mode (2006) (63)
- Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2/SiC interface (2008) (63)
- Phosphorous passivation of the SiO2/4H–SiC interface (2012) (62)
- Phosphorous passivation of the SiO2/4H–SiC interface (2012) (62)
- Fundamentals of surface and thin film analysis : North Holland, Amsterdam, 1986 (ISBN 0-444-00989-2). xviii + 352 pp. Price Dfl. 125.00. (1987) (62)
- Optical nonlinearities in VO2 nanoparticles and thin films (2004) (60)
- Comparison of Average-Potential Models and Binary-Collision Models of Axial Channeling and Blocking (1970) (60)
- 100) and (110) SiSiO2 interface studies by MeV ion backscattering (1980) (59)
- Thermally assisted flash annealing of silicon and germanium (1978) (57)
- Thickness dependence of boron penetration through O/sub 2/- and N/sub 2/O-grown gate oxides and its impact on threshold voltage variation (1996) (55)
- The combined use of He back-scattering and He-induced X-rays in the study of anodically grown oxide films on GaAs☆ (1973) (55)
- Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances (2006) (54)
- Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors (2000) (54)
- Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces (2011) (54)
- Pressure dependence of SiO2 growth kinetics and electrical properties on SiC (2008) (54)
- Role of Ostwald ripening in islanding processes (1987) (54)
- Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC (2008) (54)
- MBE growth and properties of Fe3(Al,Si) on GaAs(100) (1991) (53)
- Kinetics of NO nitridation in SiO2/4H–SiC (2003) (52)
- Studies of the Si‐SiO2 interface by MeV ion channeling (1979) (52)
- Transition from the pseudomorphic state to the nonregistered state in epitaxial growth of Au on Pd(111) (1983) (51)
- Charge states of 25–150 keV H and 4He backscattered from solid surfaces (1973) (50)
- Atomic state and characterization of nitrogen at the SiC/SiO2 interface (2014) (50)
- Direct Visualization of the Solid Electrolyte Interphase and Its Effects on Silicon Electrochemical Performance (2016) (50)
- Low‐temperature homoepitaxy on Si(111) (1991) (49)
- Structure and optical properties of Ge‐Si ordered superlattices (1987) (49)
- High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping (2014) (48)
- Resistivity and oxygen content of indium tin oxide films deposited at room temperature by pulsed-laser ablation (1999) (48)
- Evolution of terrace size distributions during thin‐film growth by step‐mediated epitaxy (1990) (48)
- Interfacial order in epitaxial NiSi2 (1980) (48)
- IMPACT-PARAMETER DEPENDENCE OF K-SHELL IONIZATION BY PROTONS. (1972) (47)
- Graphitic features on SiC surface following oxidation and etching using surface enhanced Raman spectroscopy (2004) (47)
- High-resolution elemental profiles of the silicon dioxide∕4H-silicon carbide interface (2005) (47)
- Ultrashallow defect states at SiO2∕4H–SiC interfaces (2008) (46)
- Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures (2000) (46)
- Optical Radiation from Electron-Stimulated Desorption of Excited Particles (1981) (46)
- Size effects in the structural phase transition of VO 2 nanoparticles studied by surface-enhanced Raman scattering (2009) (46)
- Evidence of multilayer distortions in the reconstructed Si(001) surface (1981) (45)
- Si(100)‐(2×1)boron reconstruction: Self‐limiting monolayer doping (1990) (45)
- Domain structure of the clean reconstructed Au(110) surface (1984) (45)
- Modulation of the gold particle-plasmon resonance by the metal-semiconductor transition of vanadium dioxide (2008) (45)
- Subsurface strain in the Ge(001) and Ge(111) surfaces and comparison to silicon (1986) (44)
- Vibrational lifetimes of hydrogen in silicon (2003) (44)
- Photon‐Assisted Oxygen Diffusion and Oxygen‐Related Traps in Organic Semiconductors (2011) (43)
- Stacking-fault model for the Si(111)-(7×7) surface (1983) (43)
- Channeling in Iron and Lattice Location of Implanted Xenon (1972) (43)
- Structure and stoichiometry of "0001… 4H-SiC/oxide interface (2010) (43)
- Switchable reflectivity on silicon from a composite VO2-SiO2 protecting layer (2004) (43)
- Properties of aluminum epitaxial growth on GaAs (1981) (43)
- Quantitative analysis of strain relaxation in GexSi1−x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1−x alloys (1992) (43)
- Semiconductor point defect concentration profiles measured using coherent acoustic phonon waves (2009) (42)
- Lifetimes of hydrogen and deuterium related vibrational modes in silicon. (2001) (41)
- Observation of a (5 × 5) leed pattern from GexSi1−x(111) alloys (1984) (41)
- Total Dose Radiation Response of Nitrided and Non-nitrided SiO$_{2}$/4H-SiC MOS Capacitors (2006) (41)
- Experimental characterization of a metal-oxide-semiconductor field-effect transistor-based Coulter counter. (2008) (40)
- The Formation and Structure of CVD W Films Produced by the Si Reduction of WF 6 (1987) (40)
- Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface (2006) (39)
- Use of the channeling technique to locate interstitial impurities (1972) (39)
- Giant enhancement of hydrogen transport in rutile TiO2 at low temperatures. (2010) (38)
- Structure-dependent vibrational lifetimes of hydrogen in silicon. (2002) (37)
- Structural studies of the reconstructed W(001) surface with MeV ion scattering (1979) (36)
- Stability of boron- and gallium-induced surface structures on Si(111) during deposition and epitaxial growth of silicon (1989) (35)
- Oxygen Incorporation in Rubrene Single Crystals (2014) (35)
- Local vibrational modes of isolated hydrogen in germanium. (2000) (35)
- Systematic structural and chemical characterization of the transition layer at the interface of NO-annealed 4H-SiC/SiO2 metal-oxide-semiconductor field-effect transistors (2013) (35)
- High resistivity in InP by helium bombardment (1984) (35)
- Nitrogen content of oxynitride films on Si(100) (1994) (34)
- MeV ion scattering for surface structure determination (1981) (34)
- Contactless Determination of Electrical Conductivity of One-Dimensional Nanomaterials by Solution-Based Electro-orientation Spectroscopy. (2015) (34)
- Wide-gap semiconducting graphene from nitrogen-seeded SiC. (2013) (33)
- Multiphoton absorption in germanium using pulsed infrared free-electron laser radiation (2011) (32)
- Electrical characterization of an ultrahigh concentration boron delta‐doping layer (1994) (31)
- Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation (2001) (31)
- Point defects in Si thin films grown by molecular beam epitaxy (1992) (31)
- Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation (2001) (31)
- High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors (2011) (30)
- Reordering of reconstructed Si surfaces upon Ge deposition at room temperature (1984) (30)
- How well does 4He backscattering from low‐Z nuclei obey the Rutherford formula? (1983) (30)
- Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC (2007) (30)
- Mechanisms of oxygen incorporation in indium–tin–oxide films deposited by laser ablation at room temperature (2002) (30)
- Wide-spectrum, ultrasensitive fluidic sensors with amplification from both fluidic circuits and metal oxide semiconductor field effect transistors (2007) (30)
- Fabrication of ceramic articles from high T sub c superconducting oxides (1987) (29)
- The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H―SiC MOS devices (2011) (28)
- Epitaxial growth of alkaline earth fluorides on semiconductors (1983) (28)
- Patterned electrical conductance and electrode formation in ion-implanted diamond films (1994) (28)
- CHAPTER 6 – SURFACES (1982) (28)
- Ultrathin SiOxNy by rapid thermal heating of silicon in N2 at T=760–1050 °C (1997) (27)
- Initial stages of epitaxial growth: Gallium arsenide on silicon (1988) (27)
- Stimulus-responsive self-assembly of protein-based fractals by computational design (2019) (27)
- Optical properties of subwavelength hole arrays in vanadium dioxide thin films (2006) (27)
- Surface damage on diamond membranes fabricated by ion implantation and lift-off (2011) (26)
- Atomic positions of surface atoms using high energy ion scattering (1981) (25)
- Oxidation induced stress in SiO2/SiC structures (2017) (25)
- EFFECT OF INCORPORATED NITROGEN ON THE KINETICS OF THIN RAPID THERMAL N2O OXIDES (1995) (25)
- Ultrathin Dielectrics in Silicon Microelectronics (1998) (25)
- 4H-SiC oxynitridation for generation of insulating layers (2004) (25)
- Nitridation anisotropy in SiO2∕4H–SiC (2005) (25)
- Atomic displacements in the Au(110)-(1 × 2) surface (1984) (24)
- Application of selective chemical reaction concept for controlling the properties of oxides on GaAs (1979) (24)
- Suppression of penetration of aluminum into 8-hydroxyquinoline aluminum via a thin oxide barrier (1998) (24)
- IMPLANTATION OF Bi INTO GaP. II. CHANNELING STUDIES. (1970) (23)
- Overlayer energetics from thermal desorption on Si (1987) (23)
- Nanoscale Science, Engineering and Technology Research Directions (1999) (23)
- Vibrational dynamics of bond-center hydrogen in crystalline silicon (2001) (23)
- Role of surface interactions in beam-foil excited-state formation (1981) (23)
- Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide (2002) (22)
- Accurate thickness/density measurements of organic light-emitting diodes (1998) (22)
- Lattice-location studies on Tl, Pb, and Bi in iron, and the hyperfine field at Pb in iron (1971) (22)
- Charge Trapping Properties of 3C- and 4H-SiC MOS Capacitors With Nitrided Gate Oxides (2009) (22)
- Optical and structural characterization of copper indium disulfide thin films (2001) (22)
- The impact of nitrogen profile engineering on ultrathin nitrided oxide films for dual-gate CMOS ULSI (1995) (22)
- Persistent currents in ceramic and evaporated thin‐film toroids of Ba2YCu3O7 (1988) (22)
- Nitrogen passivation of deposited oxides on n 4H–SiC (2002) (21)
- Determination of substitutional dopant and hole concentrations in Zn‐diffused single‐crystal InP (1980) (21)
- Proton tunneling: a decay channel of the O-H stretch mode in KTaO3. (2009) (20)
- A New Type of Hybrid Copper Iodide as Nontoxic and Ultrastable LED Emissive Layer Material (2021) (20)
- Lifetime studies of Ar-2p-vacancies travelling through solids (1975) (20)
- MgB2 Josephson junctions produced by focused helium ion beam irradiation (2018) (20)
- Theory and observation of enhanced, high field hole transport in Si/sub 1-x/Ge/sub x/ quantum well p-MOSFETs (1996) (19)
- Impact of boron diffusion through O/sub 2/ and N/sub 2/O gate dielectrics on the process margin of dual-poly low power CMOS (1994) (19)
- Effects of temperature and oxygen pressure on binary oxide growth using aperture-controlled combinatorial pulsed-laser deposition (2007) (19)
- Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces (2014) (19)
- Analysis of plasma‐grown GaAs oxide films (1977) (19)
- PHOTOLUMINESCENCE OF OXYGEN IN ZnTe INTRODUCED BY ION IMPLANTATION. (1969) (19)
- 4 – Selected Low Energy Nuclear Reaction Data (1977) (19)
- Molecular beam epitaxy and reconstructed surfaces (1985) (19)
- Kinetics of nitrogen incorporation at the SiO2/4H-SiC interface during an NO passivation (2014) (19)
- Molecular beam deposition of high quality silicon oxide dielectric films (1995) (19)
- HYDROGEN RATIOS AND PROFILES IN DEPOSITED AMORPHOUS AND POLYCRYSTALLINE FILMS AND IN METALS USING NUCLEAR TECHNIQUES (1980) (18)
- Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence (2016) (18)
- The Limits of Post Oxidation Annealing in NO (2010) (18)
- Vacancy–hydrogen complexes in group-IV semiconductors (1999) (18)
- The morphology of As terminated Si(111) from desorption kinetics (1988) (18)
- Scaling and self-similarity in growth of clusters on surfaces (1991) (18)
- High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (1990) (17)
- Surface structural damage produced in InP(100) by R.F. plasma or sputter deposition (1983) (17)
- Strain-Free Ge x Si 1−x Layers with Low Threading Dislocation Densities Grown on Si Substrates (1991) (17)
- Rutherford backscattering/channeling and transmission electron microscopy analysis of epitaxial BaF2 films on Ge and InP (1983) (17)
- Implantation of Bi into GaP III. Hot-Implant Behavior (1971) (17)
- Investigation of interstitial Zn concentrations in additively colored ZnO using the uni-directional channeling and blocking technique (1971) (17)
- Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities (2002) (17)
- Significance of the channeling surface peak in thin‐film analysis (1978) (16)
- Vibrational lifetimes and frequency-gap law of hydrogen bending modes in semiconductors. (2006) (16)
- Structural analogy between GeSi(111)-5 × 5 and Si(111)-7 × 7 surfaces (1984) (16)
- Initial growth studies of silicon oxynitrides in a N2O environment (1996) (15)
- Excitation of long-wavelength surface optical vibrational modes in films, cubes and film/cube composite system using an atom-sized electron beam. (2018) (15)
- UNIDIRECTIONAL CHANNELING AND BLOCKING: A NEW TECHNIQUE FOR DEFECT STUDIES (1969) (15)
- Ordered monolayer structures of boron in Si(111) and Si(100) (1991) (15)
- High-throughput electrical measurement and microfluidic sorting of semiconductor nanowires. (2016) (15)
- ion implantation of bismuth into GaP. I. photoluminescence (1970) (15)
- ANOTHER MEASUREMENT OF THE POLARIZATION OF DEUTERONS CHANNELED THROUGH THIN Ni FOILS. (1972) (15)
- MOS Characteristics of C-Face 4H-SiC (2010) (14)
- A Quantitative Study of the Relationship Between Interfacial Carbon and Line Dislocation Density in Silicon Molecular Beam Epitaxy (1983) (14)
- Displacement around a Dissolved Impurity Atom in a Metal: Sn in Cu (1982) (14)
- Surface characterization of silicon on insulator material (1998) (14)
- Lattice Location of Impurities Implanted into Metals (1974) (14)
- Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy (2012) (14)
- Isoelectronic bound exciton emission from Si‐rich silicon‐germanium alloys (1990) (14)
- Summary Abstract: Valence‐band discontinuities in (100) GaSb/AlSb and GaSb/InAs heterojunctions (1987) (14)
- Atomic-Scale Engineering of the SiC-SiO2 Interface (2000) (14)
- CHAPTER 5 – DEFECT DEPTH DISTRIBUTIONS (1982) (14)
- End-point energy variations in the noncharacteristic radiation produced by S, C1, Ar, K, Ca, and Ti bombardment of Si (1974) (13)
- Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide (2001) (13)
- Search for cluster effects in x-ray production by fast hydrogen molecules (1978) (13)
- Synthesis and characterization of porous TiO2 with wormhole-like framework structure (2008) (13)
- Interface passivation of Silicon Dioxide layers on Silicon Carbide (2005) (13)
- Thermal Routes to Ultrathin Oxynitrides (1998) (13)
- Nitridation of the SiO2/4H–SiC interface studied by surface-enhanced Raman spectroscopy (2007) (12)
- PbS/PbSe structures with core–shell type morphology synthesized from PbS nanocrystals (2007) (12)
- Vibrational lifetimes and isotope effects of interstitial oxygen in silicon and germanium. (2004) (12)
- Vapor-Phase SiO2 Etching and Metallic Contamination Removal in an Integrated Cluster System (1995) (12)
- Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing (2015) (12)
- The rotating sample technique for measurement of random backscattering yields from crystals and its application to β-alumina (1978) (12)
- Comparison of high energy ion beam and electron beam surface probes (1982) (12)
- Properties of H+ Implanted 4H-SiC as Related to Exfoliation of Thin Crystalline Films (2014) (12)
- Si(111): Ni surface studies by AES, UPS, LEED, and ion scattering (1981) (11)
- Nitrogen as background gas in pulsed-laser deposition growth of indium tin oxide films at room temperature (2003) (11)
- Epitaxial growth of BaF2 on semiconductor substrates (1983) (11)
- DETERMINATION OF CHANNELING PROBABILITY FROM TRANSMITTED-PARTICLE ENERGY SPECTRA. (1970) (11)
- New Approaches to Surface Structure Determinations (1981) (11)
- Neutralization of energetic He ions scattered from clean and Cs-covered Si(100) (1984) (11)
- Effects and mechanisms of RIE on SiC inversion layer mobility and its recovery (2015) (11)
- Depth dependent modification of optical constants arising from H+ implantation in n-type 4H-SiC measured using coherent acoustic phonons (2016) (11)
- Pattern induced ordering of semiconducting graphene ribbons grown from nitrogen-seeded SiC (2015) (10)
- Auger electron emission induced by MeV H+ and He+ ions (1983) (10)
- Selective electroless copper metallization of palladium silicide on silicon substrates (1991) (10)
- Statistical equilibrium in particle channeling (1987) (10)
- Silicon surface and interface issues for nanoelectronics (2005) (9)
- Thin film morphology: equilibrium between clusters and uniform layers at non-zero temperatures (1988) (9)
- A new method to fabricate thin oxynitride/oxide gate dielectric for deep submicron devices (1993) (9)
- Interdiffusion at the Ge(100)/Sn and Ge(111)/Sn interfaces (1986) (9)
- Summary Abstract: Epitaxial growth of BaF2 on Ge and InP (1983) (9)
- Thin film processing and characterization of high-temperature superconductors, Anaheim, CA, 1987 (1988) (9)
- Reduced Critical Current Spread in Planar MgB2 Josephson Junction Array Made by Focused Helium Ion Beam (2019) (9)
- Rutherford Backscattering and Nuclear Reaction Analysis (1991) (9)
- A novel technique for the fabrication of nanostructures on silicon carbide using amorphization and oxidation (2006) (9)
- Electron microscopy of the ordered boron 2 × 1 structure buried in crystalline silicon (1995) (9)
- Summary Abstract: Observation and properties of the Ge(111)‐7×7 surface from Si(111)/Ge structures (1985) (9)
- The Lattice Site Location of C Implanted into Fe (1973) (8)
- Ion beam nanosmoothing of sapphire and silicon carbide surfaces (2001) (8)
- Normal-state and superconducting properties of Co-doped BaFe2As2 and MgB2 thin films after focused helium ion beam irradiation (2019) (8)
- Buried, ordered structures: Boron in Si(111) and Si(100) (1991) (8)
- Summary Abstract: Interface formation in IV–IV heterostructures: Tin on silicon (1987) (8)
- Effect of energetic ions on the stability of bond-center hydrogen in silicon (2007) (8)
- Investigation of the Noncharacteristic X-Radiation Band Observed in Ar Bombardment of Various Targets (1973) (8)
- Physical and electrical properties of plasma-grown oxide on Ga 0.64Al0.36As (1977) (8)
- Local intermixing of GaAs/GaAlAs quantum structures by individual ion implant tracks (1992) (8)
- Concentration, chemical bonding, and etching behavior of P and N at the SiO2/SiC(0001) interface (2015) (8)
- Interface state densities near the conduction band edge in N-type 4H- and 6H-SiC (2000) (8)
- LIQUID AND SOLID PHASE REGROWTH OF Si BY LASER IRRADIATION AND THERMALLY ASSISTED FLASH ANNEALING. (1980) (8)
- Kinetics of a collagen-like polypeptide fragmentation after mid-IR free-electron laser ablation. (2008) (7)
- Neutralization of energetic He ions scattered from clean “2 × 1” Si (100) (1984) (7)
- Growth and morphology kinetics of adsorbate structures on silicon (1990) (7)
- Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States (2010) (7)
- Channeling in the helium ion microscope (2019) (7)
- Improved Stability of 4H Sic-MOS Devices after Phosphorous Passivation with Etching Process (2014) (7)
- Electron emission from diamond induced by atomic and molecular ions (2003) (7)
- High energy ion scattering (1994) (7)
- Dechanneling of 5 MeV Protons from planar channels in silicon and its temperature dependence (1973) (7)
- Structural damage produced in InP(100) surfaces by plasma‐employing deposition techniques (1985) (7)
- Growth of Graphene-Like Structures on an Oxidized SiC Surface (2009) (7)
- Effects of sodium ions on trapping and transport of electrons at the SiO2/4H-SiC interface (2014) (7)
- STUDIES OF THE Si-SiO2 INTERFACE BY MeV ION SCATTERING. (1978) (6)
- ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF BORON-DOPED SI1-XGEX STRAINED LAYERS (1994) (6)
- Summary Abstract: Epitaxial growth of Au on Pd(111) (1983) (6)
- Optimization of H+ Implantation Parameters for Exfoliation of 4H-SiC Films (2013) (6)
- Channeling at the crystal-crystal interface: Al on GaAs (001) (1981) (6)
- Nanoscale heterogeneities in a fractured alkali-activated slag binder: A helium ion microscopy analysis (2016) (6)
- Complete Surface Exfoliation of 4H-SiC by H+ - and Si+ - Coimplantation (2000) (6)
- Contactless Electrical and Structural Characterization of Semiconductor Nanowires with Axially Modulated Doping Profiles. (2019) (6)
- Effect of nitrogen passivation on interface composition and physical stress in SiO2/SiC(4H) structures (2018) (6)
- Molecular Beam Epitaxial Growth of Very High Mobility Two-Dimensional Electron Gases in Si/GeSi Heterostructures (1991) (6)
- CHAPTER 4 – DECHANNELING BY DEFECTS (1982) (6)
- Direct Observation of Intermixing in GAAS/AIAS Multilayers After Very Low-Dose Ion-Implantation (1989) (5)
- The lattice location and hyperfine field of implanted Yb in Fe as a function of annealing temperature (1977) (5)
- Evidence for Bandgap Opening in Buckled Epitaxial Graphene from Ultrafast Time-Resolved Terahertz Spectroscopy (2015) (5)
- Temperature Dependence and Annealing Effects of Absorption Edges for Selenium Quantum Dots Formed By Ion Implantation In Silica Glass (2007) (5)
- Advancements in SiC Power Devices Using Novel Interface Passivation Processes (2014) (5)
- Combined Lattice Location and Hyperfine Field Study of Yb Implanted into Fe (1974) (5)
- Total-dose radiation hardness of double-gate ultra-thin SOI MOSFETs (2003) (5)
- 14N depth distribution measurements for ultrathin dielectric films on silicon (100) (1996) (5)
- Using a Semiconductor-to-Metal Transition to Control Optical Transmission through Subwavelength Hole Arrays (2008) (5)
- Anomalous surface segregation of Sb in Si during epitaxial growth (1996) (5)
- Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC (2005) (5)
- CHAPTER 2 – CHANNELING WITHIN THE CRYSTAL (1982) (5)
- Tetragonal Strain in MBE Ge x Si 1-x Films Grown on (100) Si Observed by Ion Channeling and X-Ray Diffraction (1983) (5)
- Novel Sn-based photoresist for high aspect ratio patterning (2018) (5)
- Structural Properties of Single Crystal Rare-Earth Thin Films Y and Gd Grown by Molecular Beam Epitaxy (1984) (5)
- Application of Channeling to Surface Science (1983) (5)
- Two-dimensional electron gas at the AlGaN/GaN interface: Layer thickness dependence (2020) (5)
- Bonding, defects, and defect dynamics in the SiC-SiO2 system (2000) (4)
- Surface Stoichiometry of CdSe Nanocrystals (1998) (4)
- Pulsed laser deposition of conductive metallo-dielectric optical filters (2002) (4)
- Applications of Ion Beams to Materials Science (1991) (4)
- Growth of multidimensional superlattices using step array templates: Evolution of the terrace size distribution (1990) (4)
- Depth-dependent defect analysis in RBS/channeling (1990) (4)
- Strain effects in epitaxial monolayer structures: SiGe and SiSiO2 systems (1990) (4)
- Silicon crystal distortions at the Si(100)-SiO 2 interface from analysis of ion-scattering (2004) (4)
- Ion-Induced X-Rays in Solids (1975) (4)
- Depth profiles, surface damage and lattice location of boron/deuterium co-doped diamond (2005) (4)
- Vibrational dynamics of isolated hydrogen in germanium (2002) (4)
- Summary Abstract: The influence of surface reconstruction on the initial stages of silicon molecular beam epitaxy (1985) (4)
- Cluster Size Distributions in Different Temperature Regimes: The System Ga on GaAs(001) (1991) (4)
- Energy-dependent vibrational spectra of the Si(111)-B surface (1990) (4)
- Defect engineering of silicon with ion pulses from laser acceleration (2022) (4)
- Controlling film growth with selective excitation: Chemical vapor deposition growth of silicon (2004) (4)
- Magnetic anisotropy in dc diode getter sputtered GdCo films: how important is the argon content in the films? (1986) (4)
- Implantation induced changes in quantum well structures (1993) (4)
- A symmetric 0.25 /spl mu/m CMOS technology for low-power, high-performance ASIC applications using 248 nm DUV lithography (1995) (4)
- Depth Profiling with Ion Induced X-Rays (1976) (4)
- Lattice location of impurities derived from hyperfine interaction and channeling (1978) (4)
- Photon energy threshold for filling boron induced charge traps in SiO2 near the Si/SiO2 interface using second harmonic generation (2010) (4)
- Clustering mechanism during growth of GaAs on silicon (1988) (4)
- Effect of surface treatments on ALD Al2O3/4H-SiC metal–oxide–semiconductor field-effect transistors (2021) (4)
- Nanoscale Internal Fields in a Biased Graphene-Insulator-Semiconductor Structure. (2016) (4)
- Epitaxial Si-Ge etch stop layers with ethylene diamine pyrocatechol for bonded and etchback silicon-on-lnsulator (1994) (4)
- Passivation of Deep Levels at the SiO2/SiC Interface (2010) (4)
- Ion beam measurements of Sn/In ratios in indium tin oxide films prepared by pulsed-laser deposition (2001) (3)
- Structure and Properties of Ultrathin Ge-Si Superlattices (1986) (3)
- Rutherford scattering-channeling analysis of semiconductor interfaces (1983) (3)
- The Formation and Structure of CVD W Films Produced by the Si Reduction of WF6 (1987) (3)
- The creation of excited hydrogenic states near surfaces (1982) (3)
- Sodium, Rubidium and Cesium in the Gate Oxides of SiC MOSFETs (2012) (3)
- Materials Analysis with High Energy Ion Beams Part I: Rutherford Backscattering (1987) (3)
- Interaction of high-power infrared radiation with germanium (2008) (3)
- Near-interface traps in n-type SiO2/SiC MOS capacitors from energy-resolved CCDLTS (2010) (3)
- Materials Analysis with High Energy Ion Beams Part II: Channeling and Other Techniques (1987) (3)
- Strained Layer Epitaxy (1988) (3)
- Stimulus-responsive Self-Assembly of Enzymatic Fractals by Computational Design (2018) (3)
- Ion-scattering analysis of self-assembled monolayers of silanes on organic semiconductors (2010) (3)
- Strained Layer Semiconductor Films: Structure and Stability (1987) (3)
- New optical transitions in Ge–Si ordered atomic‐layer structures (1987) (3)
- Use of ion beam techniques to characterize thin plasma grown GaAs and GaAlAs oxide films (1978) (3)
- Summary Abstract: Au/Ag(111) epitaxy: Ion scattering and Auger analysis (1982) (3)
- Local Ultra-Densification of Single-Walled Carbon Nanotube Films: Experiment and Mesoscopic Modeling (2022) (3)
- Impact of Nitridation on Negative and Positive Charge Buildup in SiC Gate Oxides (2007) (3)
- Surface studies of W(100) by MeV He scattering (1978) (3)
- Light emission from 4H SiC MOSFETs with and without NO passivation (2001) (3)
- Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties (2014) (3)
- Characterization of the Oxide-Semiconductor Interface in 4H-SiC/SiO2 Structures using TEM and XPS (2015) (2)
- Post-implantation depth profiling using time-domain Brillouin scattering (2019) (2)
- Nanostructured Arrays Formed by Finely Focused Ion Beams (1998) (2)
- Vibrational Lifetimes of Hydrogen and Silicon MOSFET Reliability (2003) (2)
- Ion scattering simulations of the Si(100)-SiO2 interface (2006) (2)
- Thin PSG Process for 4H-SiC MOSFET (2014) (2)
- Summary Abstract: Structural analysis of ultrathin epitaxial Ge/Si films on Si(100) (1987) (2)
- Clustering in the Epitaxial Growth of GaAs ON Si (1987) (2)
- Passivation of oxide layers on 4H-SiC using sequential anneals in nitric oxide and hydrogen (2003) (2)
- Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation (2012) (2)
- Abstract: MeV ion scattering studies of the reconstruction of the W(001) surface and its reordering by hydrogen adsorption (1979) (2)
- Optical Radiation from Electron Sputtering of Alkali Halides (1981) (2)
- Charge Neutralization of Medium Energy H and 4He Ions Backscattered from Solid Surfaces, Effects of Surface Cleaning (1975) (2)
- Particle–solid interactions and 21st century materials science (2003) (2)
- The influence of SiC/SiO2 interface morphology on the electrical characteristics of SiC MOS structures (2014) (2)
- Summary Abstract: Application of high energy ion channeling to GaAs(110) (1983) (2)
- Electron trapping at interface states in SiO2/4H-SiC and SiO2/6H-SiC MOS capacitors (2009) (2)
- Abstract: MeV ion scattering from thin Si single crystals: A novel approach to interface studies (1979) (2)
- A novel technique to determine hetero-surface diffusion in semiconductor systems (1988) (2)
- Three-Dimensional Clustering on Surfaces: Overlayers on Si (1990) (2)
- Effective reduction of PdCoO2 thin films via hydrogenation and sign tunable anomalous Hall effect (2021) (2)
- Thermal-oxidation-free dielectrics for SiC power devices (2017) (2)
- Comprehensive characterization of copper indium disulfide thin film (1999) (2)
- Ohmic Contacts to P-Type Epitexial and Imlanted 4H-SiC (2006) (2)
- Ion beam lithographic fabrication of ordered VO 2 nanoparticle arrays (2004) (2)
- The Effects of Post-Oxidation Anneal Conditions on Interface State Density Near the Conduction Band Edge and Inversion Channel Mobility for SiC MOSFETs (2000) (2)
- Effect of nitric oxide annealing on the interface trap densities near the band edges in 4H-SiC (2000) (2)
- Nitrogen‐Induced Changes in the Electronic and Structural Properties of 4H‐SiC (0001)/SiO2 Interfaces (2021) (2)
- Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions (2011) (2)
- Summary Abstract: MeV ion scattering studies of the(111)Si−SiO2 interface (1981) (2)
- Influence of Strain on Silicon Surface and Silicon Oxide Interface Reconstruction (1986) (2)
- GROWTH OF THIN Pb LAYERS ON Cu(001). (1984) (1)
- Vibrational Lifetimes of Hydrogen in Silicon: Isotope Effects and MOSFET Reliability (2004) (1)
- Ultrafast control of a surface plasmon resonance via the insulator to metal transition in VO2 nanoparticles (2005) (1)
- Doping of Conjugated Polythiophenes with Alkyl (2009) (1)
- The Effects of Nitrogen on the Interface State Density Near the Conduction Band Edge in 4H and 6H-SiC (2000) (1)
- Probing Phonon and Infrared-Plasmons in Nanoscale Interfaces (2019) (1)
- CHAPTER 8 – EPITAXIAL LAYERS (1982) (1)
- 4H-SiC Oxide Characterization with SIMS Using a 13C Tracer (2009) (1)
- The Effects of Phosphorus at the SiO2/4H-SiC Interface (2012) (1)
- Experimental Probes of Microscopic Interactions Controlling Diffusion in Cation Substituted β-Alumina (1976) (1)
- Silicide Formation at Fe-Si Interfaces Studied by Mössbauer Spectroscopy and Rutherford Backscattering (1980) (1)
- Atomic Displacements in the Si(111)-(700D77) Surface (1980) (1)
- Optical nonlinearities and the ultrafast phase transition of VO2 nanoparticles and thin films (2006) (1)
- Erratum: “Pressure dependence of SiO2 growth kinetics and electrical properties on SiC” [J. Appl. Phys. 103, 023522 (2008)] (2008) (1)
- Research Opportunities in Crystalline Silicon Photovoltaics for the 21st Century (1999) (1)
- 9 – Ion Scattering from Surfaces and Interfaces (1989) (1)
- Initial Stages of Interface Formation in the Si/Sn System (1986) (1)
- Erratum: ‘‘Equilibrium shape of Si’’ [Phys. Rev. Lett.70, 1643 (1993)] (1994) (1)
- 5 – High Energy Ion Scattering (1983) (1)
- IIIB-5 a technique for rapidly alternating boron and arsenic doping in ion-implanted silicon molecular beam epitaxy (1981) (1)
- COUPLED QUANTUM – SCATTERING MODELING OF THERMOELECTRIC PERFORMANCE OF NANOSTRUCTURED MATERIALS USING THE NON- EQUILIBRIUM GREEN’S FUNCTION METHOD By (2007) (1)
- 4H-SiC surface energy tuning by nitrogen up-take (2017) (1)
- CHAPTER 1 – INTERACTION OF ION BEAMS WITH SURFACES (1982) (1)
- Molecular Dynamics Simulations of Bubble Formation in Nanochannels (2007) (1)
- Silicon dioxide–silicon carbide interfaces: Current status and recent advances (2008) (1)
- Fabrication of Ordered Metallic Nanocluster Arrays Using a Focused Ion Beam (2002) (1)
- Correlation Between Defect Density and Process Variables In Step-Graded, Relaxed Si 0.7 Ge 0.3 Grown on Si by Rtcvd (1993) (1)
- Walter Lyons Brown (2018) (1)
- Summary Abstract: Ge deposition on Si(111)‐7×7 and Si(100)‐2×1: Effects on Si surface structure (1984) (1)
- CHAPTER 3 – PARTICLE DISTRIBUTIONS WITHIN THE CHANNEL (1982) (1)
- Strain Relief Mechanisms in The Growth of Ge x Si 1−x /Si(110) Heterostructures (1992) (1)
- Reducing Conductivity Variability in Si Nanowires via Surface Passivation for Nanoelectronics (2021) (1)
- The Effects of Dopants and Crystal Perfection on the Chemical Vapor Deposition of Tungsten on Silicon by Silicon Reduction of Tungsten Hexafluoride (1985) (1)
- Summary Abstract: Si(111)‐7×7 surface structure using ion scattering (1981) (1)
- Ultrathin epitaxial MgB2 on SiC: Substrate surface-polarity-dependent properties (2023) (1)
- Epitaxial Growth of BaF 2 on Semiconductor Substrates (1982) (1)
- Investigation of Oxidation Process of Ultrathin Amorphous and/or Nano-Crystalline Silicon Films (2002) (1)
- The Stoichiometry and Structure of the Si/SiO2 Interface: Ion Scattering Studies (1988) (1)
- Deuterium absorption from the D2O exposure of oxidized 4H-SiC (0001), ( 0001¯), and ( 112¯0) surfaces (2015) (1)
- Ion scattering analysis of interfaces (1984) (1)
- Boron Diffusion in Si1−x Gex Strained Layers (1992) (1)
- Summary Abstract: Bridging the gap between solid–solid and solid–vacuum interfaces: A study of buried Si/αSi interfaces (1987) (1)
- Characterization of the oxide-semiconductor transition layer in NO, P, and N-plasma passivated 4H-SiC/SiO$_2$ structures using transmission electron microscopy (2013) (0)
- Harmonic generation from metal nanoparticle arrays (2005) (0)
- Chemical Instability in Silver Nanoparticles (2004) (0)
- Rutherford Scattering-Channeling Analysis Of Semiconductor Structures (1984) (0)
- Fabrication of Metallic Nanocrystal Arrays for Nanoscale Nonlinear Optics (2012) (0)
- Electron Trapping in Ultrathin SiO/sub 2/ on Si[001] Probed by Electric-Field-Induced Second-Harmonic (1998) (0)
- Radiation Effects On Emerging Electronic Materials And Devices (2010) (0)
- Electron capture and emission at interface states in As-oxidized and NO-annealed SiO2/4H-SiC (2007) (0)
- LATTICE LOCATION OF Bi AND Tl IMPLANTED INTO IRON SINGLE CRYSTALS. (1971) (0)
- Probing the mechanism of infrared resonant desorption of hydrogen from Si(111): anharmonicity and energy pooling (2007) (0)
- SYSTEMS AND METHODS FOR REAL TIME MEASUREMENT OF SURFACE CURVATURE AND THERMAL EXPANSION OF SMALL SAMPLES (2018) (0)
- High Resolution, Real-Time Flatness and Thermal Expansion Metrology (2017) (0)
- Solution-Based Electro-Orientation Spectroscopy (EOS) for Contactless Measurement of Semiconductor Nanowires (2017) (0)
- Pulsed-Laser Deposition of Metal Quantum Dot Multilayers in Dielectric Hosts (1998) (0)
- Silicon Carbide Wafer Polishing With Gas Cluster Ion Beams (2001) (0)
- Landau level splitting in nitrogen-seeded epitaxial graphene (2016) (0)
- Fabricating arrays of vanadium dioxide nanodisks by focused ion-beam lithography and pulsed-laser deposition (2004) (0)
- Evidence for reconstruction at the Si(100)-SiO2 interface from the analysis of ion scattering experiments (2003) (0)
- Infrared Photon Stimulated Hydrogen Transport in Rutile TiO$_{2}$ (2010) (0)
- MESOSC.ALE ENGINEERING OF NANOCOMPOSI.TE NONLINEAR OPTICAL MATERIkLS (2000) (0)
- Ordered layers containing semiconductor device. (1987) (0)
- Bandgap dependence in the multiphoton absorption coefficient of semiconductors (2010) (0)
- Size effect in percolative phase separation of colossal magnetoresistive (La,Pr,Ca)MnO$_{3}$ films . (2006) (0)
- Nitrogen content and interface trap reduction in SIO2/4H-SIC (2003) (0)
- Laser-Directed Self-Organization of Metal Nano-Crystal Arrays for Nonlinear (2001) (0)
- Nucleation and Growth of Metal Nanocrystals on Patterned Substrates (2000) (0)
- Producing a conductive area in electronic devices (1992) (0)
- Epitaxial Ultrathin MgB2 Films on C-Terminated 6H-SiC(${\text{000}}\bar{{\text{1}}}$) Substrates Grown by HPCVD (2023) (0)
- Growth and morphology of pentacene films on oxide surfaces (2001) (0)
- Decay of Vibrational Excited States of Impurity in Silicon Observed by Free-Electron Laser (2008) (0)
- Nanoscale Nonlinear Optics Coupling Plasmonics to the Metal-Insulator Transition in Vanadium Dioxide (2007) (0)
- Doping in III–V Semiconductors: Foreword (1993) (0)
- The effect of channeling on MeV ion-induced auger electron production in silicon (1985) (0)
- ickness Dependence of Boron Penetration hrough 02- and NaO-Grown Gate Oxi Its Impact on Threshold Voltage Vari (1996) (0)
- Normal and superconducting properties of Co-doped BaFe 2 As 2 and MgB 2 thin films after He ion irradiation (2017) (0)
- Linear and nonlinear plasmonic effects modulated by a metalinsulator transition (2008) (0)
- CHAPTER 7 – SURFACE LAYERS AND INTERFACES (1982) (0)
- A boron-retarding and high interface quality thin gate dielectric for deep-submicron devices (1993) (0)
- lSi strained-layer superlattice grown by molecular beam epitaxy (2000) (0)
- THE INFLUENCE OF RECONSTRUCTION ON THE INITIAL STAGES OF SILICON MOLECULAR BEAM EPITAXY (1985) (0)
- The Use of Apertures to Create Discrete Combinatorial Libraries Using Pulsed Laser Deposition | NIST (2007) (0)
- Contactless, high-throughput determination of electrical conductivity of one-dimensional nanomaterials by solution-based electro-orientation spectroscopy (2015) (0)
- Study of Two Dimensional Electron Gas Formation at AlGaN/GaNInterfaces using Kelvin Probe Force Microscopy (2018) (0)
- Hydrogen-bond Specific Materials Modification in Group IV Semiconductors (2015) (0)
- Optical diffraction in ordered VO$_{2}$ nanoparticle arrays (2006) (0)
- Fabricating Two-Dimensional Metal Nanocrystal Arrays Using Pulsed-Laser Deposition and Focused Ion-Beam Technologies (2000) (0)
- IR Characterization of Low Temperature H Associated Defects in Si (2003) (0)
- Surface science lettersObservation of a (5 × 5) leed pattern from GexSi1−x(111) alloys (1984) (0)
- Surface-enhanced Raman spectroscopy of the nitrided SiO$_{2}$/SiC interface (2006) (0)
- High-throughput determination of electrical conductivity of one-dimensional nanomaterials by contactless , solution-based electro-orientation spectroscopy (2016) (0)
- Study of Penetrated Boron Concentration through Ultra-Thin Oxynitrided Gate Dielectrics (1995) (0)
- Desorption of Hydrogen from Si(111) by Resonant Excitation of the Si-H Vibrational Stretch Mode (2006) (0)
- Interfacial Connections between Organic Perovskite/n + Silicon/Catalyst that Allow Integration of Solar Cell and Catalyst for Hydrogen Evolution from Water (2023) (0)
- Mesoscale Engineering of Nanocomposite Nonlinear Optical Materials (1997) (0)
- Summary Abstract: Initial stages of interface formation in group IV–IV heterostructures: Sn on Ge(100)c2×4 and Ge(111)c2×8 (1986) (0)
- Revealing Hidden Interfacial States in NO Passivated 4H-SiC/SiO$_{2}$ Structures using TEM-EELS and XPS (2016) (0)
- Heteroepitaxial Growth and Phase Transition Properties of Vanadium Dioxide Thin Films (2007) (0)
- Transmission modulation through sub-wavelength hole arrays in metal-VO$_{2}$ double-layer nanostructures (2006) (0)
- Ion implantation of bismuth into GaP- 1, 2 (1970) (0)
- Ultrasensitive micro/nanoscale resistive pulse sensors by integrating fluidic devices with MOSFETS (2008) (0)
- Two- and three-photon absorption of germanium in the mid-infrared (2009) (0)
- Chemical state of phosphorous at the SiC/SiO2 interface (2019) (0)
- TEM-EELS Investigation of Boron and Phosphorus Passivated 4H-SiC/SiO$_{2}$ Interface Structures (2017) (0)
- The role of hydrogen in silicon wafer bonding: an infrared study (1995) (0)
- Summary Abstract: The influence of reconstruction on epitaxial growth: Ge on Si(100)‐2×1 and Si(111)‐7×7 (1985) (0)
- A Novel Synthesis Technique for Semiconductor Thin Film and Heterostructure Formation (2001) (0)
- High Tc superconducting Y‐Ba‐Cu‐O oxide films by sputtering and molecular beam epitaxy: Morphology, structural characterization and superconducting properties (2008) (0)
- Wavelength-Selective Alteration of the Si(001)/SiO 2 Interface by Intense Tunable Infrared Radiation (1998) (0)
- Metal-semiconductor phase transition in nanoscale vanadium dioxide precipitates formed in silica by ion implantation (2002) (0)
- Study of Two Dimensional Electron Gas Formation at AlGaN/GaN Interfaces using Kelvin Probe Force Microscopy (2018) (0)
- The Lattice Location of Conducting Atoms in Ag, K β-Alumina by Particle Channeling (1976) (0)
- Effect of e-h Pairs on the Stability of Bond-Center Hydrogen in Silicon (2006) (0)
- Growth of Group IV-IV Heterostructures: Initial Stages of Interface Formation (1986) (0)
- Research Opportunities in Crystalline Silicon Photovoltaics for the 21 st Century Preprint April 1999 (2001) (0)
- Pseudo-magnetic fields in rippled nitrogenated graphene (2014) (0)
- Proton Tunneling: A Decay Channel of the O-H Stretch Mode in $\mathrm{KTaO}_{3}$ (2009) (0)
- Thermal Bubble Nucleation in Nanochannels: Simulations and Strategies for Nanobubble Nucleation and Sensing (2008) (0)
- SEMICONDUCTOR DIELECTRIC INTERFACES AND DEFECT PASSIVATION (2001) (0)
- Metal-semiconductor phase transition of order arrays of VO2 nanocrystals (2004) (0)
- Solution-Based Electro-Orientation Spectroscopy for the Automated, Quantitative Characterization and Sorting of 1D Nanomaterials (2014) (0)
- Enhanced transmission through a periodic array of subwavelength apertures controlled by a semiconductor-metal phase transition (2005) (0)
- Implantation of Co into Aluminum: Damage and Lattice Location Studies (1977) (0)
- Abstract: Review of ion scattering methods for surface structure determination (1978) (0)
- CHAPTER 9 – IMPURITY-DEFECT INTERACTIONS (1982) (0)
- Development of Process Technologies for High-Performance MOS-Based SiC Power Switching Devices (2007) (0)
- Influence of Mn Distribution on Ferromagnetism in Magnetic Semiconductor Mn$_x$Ge$_{1-x}$ (2005) (0)
- The intrinsic (trap-free) transistors based on perovskite single crystals with self-passivated surfaces (2021) (0)
- AlGaN/GaN Heterostructures in High Electron Mobility Transistors (2018) (0)
- MeV ion scattering from thin Si single crystals: Anovel approach to interface studies (1979) (0)
- Oxidation induced stress in the SiO 2 / SiC system (2016) (0)
- Ultrafast evolution of the surface plasmon resonance in vanadium dioxide nanoparticles (2005) (0)
- Buried , orderedstructures : boronin Si ( 111 ) andSi ( 100 ) (0)
- Modulating linear and nonlinear nanoplasmonic effects using the metal-insulator transition in vanadium dioxide (2008) (0)
- Measurements of depth dependent modification of optical constants arising from H + implantation in n-type 4H-SiC using coherent acoustic phonons (2016) (0)
- A New Precision Velocity Measurement Technique for Accelerator Beams (1981) (0)
- Electrokinetic method to study the surface and electronic properties of silicon nanowire diodes (2020) (0)
- Infrared Wavelength Selective Modification of Doped Hydrogenated Silicon (1998) (0)
- Effects of N Incorporation on Electron Traps at SiO2/SiC Interfaces (2012) (0)
- Intrinsic (Trap‐Free) Transistors Based on Epitaxial Single‐Crystal Perovskites (2022) (0)
- Nitrogen Annealing As a Sustainable Method for Interface Trap Passivation in 4H-SiC Mosfets (2022) (0)
- New evidence for reconstruction at the Si(100)-SiO2 interface from analysis of ion scattering (2003) (0)
- Switching Light through Arrays of Sub-wavelength Holes in Vanadium Dioxide (2006) (0)
- Normal and superconducting properties of Co--doped BaFe$_{\mathrm{2}}$As$_{\mathrm{2}}$ and MgB$_{\mathrm{2}}$ thin films after He ion irradiation (2017) (0)
- Atomic-Scale Engineering of the SiC-SiO{sub 2} Interface (1999) (0)
- Nitrogen incorporation into epitaxial graphene formed on SiC (2013) (0)
- Directed self-assembly of ordered arrays metal nanocrystals for optical applications (2002) (0)
- Measurement of x-rays emitted from projectiles moving in solid targets (1975) (0)
- Semiconducting Graphene Ribbons Grown on Nitrogen-Seeded SiC (2015) (0)
- Nitridation of the 4H-SiC/Oxide interface via NO anneal and plasma injection (2009) (0)
- Ultra-sensitive fluidic sensors by integrating fluidic circuits and mosfets (2007) (0)
- Formation of carbon nanoclusters by implantation of keV carbon ions in fused silica followed by thermal annealing (2005) (0)
- Vibrational lifetimes of O-H stretch modes in MgO and ZnO (2008) (0)
- Second harmonic generation from centrosymmetric arrays of gold nanoparticles (2006) (0)
- Planar MgB 2 Josephson junctions and arrays made by focused helium ion beam (2018) (0)
- Mn dopant distribution and magnetic ordering in Mn-doped Ge ferromagnetic semiconductor (2006) (0)
- Summary Abstract: Structural analysis of ultrathin epitaxial films (1985) (0)
- Boron Diffusion in Si ,-, Ge " Strained Layers (0)
- Protonic Tunneling: a Decay Channel for Relaxation of Hydrogen Local Modes (2009) (0)
- Vibrational Lifetimes and Decay Mechanisms of O-H Stretch Modes in Metal Oxide Proton Conductors (2010) (0)
- Charge states of 25- to 150-keV H and $sup 4$He backscattered from solid surfaces (1973) (0)
- Percolation effects in networks of vanadium dioxide nanocrystals (2006) (0)
- Study of depth-dependent radiation-induced defects using coherent acoustic phonon spectroscopy (2011) (0)
- Semiconductor-Dielectric Interfaces: Structure, Defects and Mobility (2005) (0)
- Fabrication of copper-indium-disulfide films onto Mo/glass substrates using pulsed laser deposition (2002) (0)
- Qubit synthesis under extreme conditions (2018) (0)
- Analytical Electron Microscopy of Antimony Doped 4H-SiC/SiO 2 and 4H-SiC/Boron and Phosphorus Doped SiO 2 Interface Structures in MOS Devices (2018) (0)
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