Leroy Chang
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Experimental physicist and solid state electronics researcher and engineer
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Leroy Changengineering Degrees
Engineering
#1393
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#2062
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#533
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Cybernetics
#167
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#173
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#6
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Electrical Engineering
#721
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#785
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#193
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Applied Physics
#2673
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#2715
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#238
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Engineering Physics
Leroy Chang's Degrees
- PhD Physics Stanford University
- Bachelors Electrical Engineering California Institute of Technology
Why Is Leroy Chang Influential?
(Suggest an Edit or Addition)According to Wikipedia, Leroy L. Chang was an experimental physicist and solid state electronics researcher and engineer. Born in China, he studied in Taiwan and then the United States, obtaining his doctorate from Stanford University in 1963. As a research physicist he studied semiconductors for nearly 30 years at IBM's Thomas J. Watson Research Center, New York. This period included pioneering work on superlattice heterostructures with Nobel Prize-winning physicist Leo Esaki.
Leroy Chang's Published Works
Published Works
- Resonant tunneling in semiconductor double barriers (1974) (1569)
- Variational calculations on a quantum well in an electric field (1983) (623)
- Molecular‐beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy (1977) (191)
- In1−xGaxAs‐GaSb1−yAsy heterojunctions by molecular beam epitaxy (1977) (168)
- Interdiffusion between GaAs and AlAs (1976) (168)
- Electronic properties of InAsGaSb superlattices (1980) (157)
- The Growth of a GaAs–GaAlAs Superlattice (1973) (131)
- New III‐V diluted magnetic semiconductors (invited) (1991) (127)
- Shubnikov—de Haas Oscillations in a Semiconductor Superlattice (1977) (118)
- Structures Grown by Molecular Beam Epitaxy (1973) (113)
- Polytype Superlattices and Multi-Heterojunctions (1981) (97)
- Observation of semiconductor‐semimetal transition in InAs‐GaSb superlattices (1979) (92)
- A new one-dimensional quantum well structure (1985) (89)
- Semiconductor superfine structures by computer-controlled molecular beam epitaxy (1976) (84)
- Dependence of the Diffusion Coefficient on the Fermi Level: Zinc in Gallium Arsenide (1967) (82)
- Raman scattering in GaSb‐AlSb strained layer superlattices (1985) (81)
- Resonant Tunneling in Semiconductors (1991) (78)
- Two-dimensional electronic structure in InAs-GaSb superlattices☆☆☆ (1978) (77)
- Structural quality and the growth mode in epitaxial ZnSe/GaAs(100) (1993) (67)
- Diffusion Mechanism of Zn in GaAs and GaP Based on Isoconcentration Diffusion Experiments (1964) (64)
- Electron Tunneling between a Metal and a Semiconductor: Characteristics of Al‐Al2O3‐SnTe and −GeTe Junctions (1967) (62)
- Ga1−x Alx As superlattices profiled by Auger electron spectroscopy (1974) (61)
- Three-dimensional character of semimetallic InAs-GaSb superlattices (1981) (60)
- Growth mode and dislocation distribution in the ZnSe/GaAs (100) system (1992) (55)
- The conduction properties of GeGaAs1−xPxn−n heterojunctions (1965) (52)
- P-Type diluted magnetic III–V semiconductors (1991) (52)
- Smooth and coherent layers of GaAs and AlAs grown by molecular beam epitaxy (1976) (49)
- Vacancy Association of Defects in Annealed GaAs (1971) (49)
- Molecular beam epitaxy of AlSb (1982) (45)
- Stark shifts in GaAs/GaAlAs quantum wells studied by photoluminescence spectroscopy (1987) (45)
- SURFACE INVERSION AND ACCUMULATION OF ANODIZED InSb (1965) (45)
- New diluted magnetic semiconductors based on III–V compounds (1991) (45)
- Diffusion and Solubility of Zinc in Gallium Phosphide Single Crystals (1964) (44)
- Profiling of periodic structures (GaAs–GaAlAs) by nuclear backscattering (1973) (42)
- Diffusion and solubility of zinc in indium phosphide (1964) (41)
- Luminescence from InAsGaSb superlattices (1981) (41)
- Epitaxy of III-V diluted magnetic semiconductor materials (1990) (40)
- Semiconductor Quantum Heterostructures (1992) (40)
- Semimetallic InAs-GaSb Superlattices to the Heterojunction Limit, (1981) (39)
- Quantized hall effect in single quantum wells of InAs (1984) (35)
- Carrier densities in InAs–Ga(Al)Sb(As) quantum wells (1987) (33)
- Studies by cross‐sectional transmission electron microscope of InAs grown by molecular beam epitaxy on GaAs substrates (1980) (32)
- The solubilities and distribution coefficients of Zn in GaAs and GaP (1964) (31)
- Molecular beam epitaxy of alternating metal-semiconductor films (1973) (31)
- Shubnikov-De Haas oscillations under tilted magnetic fields in InAs-GaSb superlattices (1982) (31)
- Ge‐GaAs superlattices by molecular beam epitaxy (1981) (31)
- Self‐consistent calculations in InAs–GaSb heterojunctions (1982) (31)
- Semiconductor superlattices by MBE and their characterization (1980) (30)
- Fractional quantum Hall effect in a two-dimensional hole system (1984) (27)
- Electron densities in InAs–AlSb quantum wells (1984) (25)
- Growth of PbTe/CdTe on GaAs (100) (1987) (25)
- Semiconductor superlattices in high magnetic fields (1979) (25)
- Fractionally quantized Hall effect in two-dimensional systems of extreme electron concentration (1984) (24)
- Optical properties of GaSb–AlSb superlattices (1983) (24)
- Growth and transport properties of (Ga,Al)Sb barriers on InAs (1989) (22)
- The junction depth of concentration-dependent diffusion. Zinc in III–V compounds (1964) (21)
- Effect of lattice mismatch on the electron mobilities of InAs grown on GaAs by MBE (1980) (20)
- Tunnel triode—a tunneling base transistor (1977) (20)
- Inhomogeneous lattice distortion in the heteroepitaxy of InAs on GaAs (1987) (20)
- Optical transmission in GaSb–AlSb superlattices (1983) (20)
- The germanium insulated-gate field-effect transistor (FET) (1965) (19)
- Interpretation of scanning high‐energy electron diffraction measurements with application to GaAs surfaces (1973) (19)
- New Phenomenon in Semiconductor Junctions—GaAs Duplex Diodes (1970) (18)
- Molecular beam epitaxy of Ge–GaAs superlattices (1981) (18)
- A review of recent advances in semiconductor superlattices (1983) (18)
- Diluted magnetic semiconductor superlattices for magnetic studies of dimensional crossover (invited) (1988) (18)
- Observation of an Atomlike Energy Spectrum with LargegValues by Tunneling Spectroscopy (1968) (17)
- Superfine structures of semiconductors grown by molecular‐beam epitaxy (1976) (15)
- Contrast improvement with balanced diffusion control of PAG and PDB (2012) (14)
- HIGH‐FIELD PHOTOCONDUCTIVITY OF AMORPHOUS GeTe and GeSe FILMS (1970) (14)
- Cyclotron-resonance and Shubnikov-deHaas experiments in a N-InAs-GaSb super-lattice (1982) (14)
- Conductance Extrema in Metal—Insulator—Semiconductor Tunnel Junctions (1968) (12)
- Optical spectroscopy of GaAsGaAlAs quantum wells under an external electric field (1987) (11)
- Interfacial roughness in InAs/GaAs heterostructures determined by soft x‐ray reflectivity (1989) (11)
- CdTe-CdMnTe superlattices (1989) (11)
- Junction delineation by anodic oxidation in InSb (As, P) (1967) (11)
- ELECTRON TUNNELING FROM METAL TO InSb (1966) (10)
- Weak localization of two-dimensional conduction holes (1984) (10)
- Epitaxial growth of PbTe on (100) GaAs substrates (1988) (10)
- Local Mn structures in III—V diluted magnetic semiconductor (In,Mn)As (1993) (10)
- Electric field-induced quenching of luminescence in quantum wells (1983) (9)
- Electron barriers in AI-AI 2 O 3 -SnTe and AI-AI 2 O 3 -GeTe tunnel junctions (1966) (7)
- Sub-band dimensionality in semiconductor superlattices (1978) (6)
- Orientation dependence of surface charge on anodized InSb (1967) (6)
- Investigations of the quantum photovoltaic effect in InAs‐GaSb semiconductor superlattices (1988) (6)
- Segregated AlGaAs(110) grown by molecular beam epitaxy (1986) (5)
- Field dependence of surface mobility at n-n heterojunction interface (1965) (5)
- GaAs-GaAlAs graded-index separate confinement heterostructure laser diodes selectively grown by molecular beam epitaxy on SiO2-masked substrates (1987) (5)
- One-dimensional electron transport on the surface channel of InAs quantum wells (1992) (4)
- SEMICONDUCTOR QUANTUM-WELL HETEROSTRUCTURES (1985) (4)
- Effect of nonparabolic momentum on Fowler-Nordheim tunneling through an insulator☆ (1969) (4)
- ELECTRONS AND HOLES IN InAs-Ga (Al) Sb (As) QUANTUM WELLS (1987) (4)
- Generalized Current and Conductance Extrema in Metal‐Insulator‐Semiconductor Tunnel Junctions (1969) (4)
- Abstract: Superfine heterostructures of In1−xGaxAs and GaSb1−YAsY (1978) (4)
- Electronic Properties of InAs-GaSb and Related AlSb Superlattices (1986) (4)
- Soft x-ray investigation of the effect of growth conditions on InAs/GaAs heterostructures (1990) (3)
- Transient grating dynamics in Cd1−xMnxTe diluted magnetic semiconductor superlattices (1989) (3)
- GeTe–GaAs Tunnel Junction: A Negative‐Resistance Schottky‐Type Barrier (1968) (3)
- Abstract: New semiconductor heterostructures (1978) (3)
- Ultimate FET structures (1965) (3)
- Strong blue shift of the luminescence of indirect AlAs GaAlAs quantum-wells with excitation intensity (1990) (2)
- 2.2 – Molecular-Beam Epitaxy† (1975) (2)
- Ultrafast polarization spectroscopy of diluted magnetic semiconductor superlattices (1990) (2)
- Static timing analysis of high-speed boards (1997) (2)
- Comments on the Junction Boundary Conditions for Heterojunctions (1966) (2)
- Resonance raman scattering in CdTe/CdMnTe superlattices under a magnetic field (1992) (1)
- A Perspective of Resonant Tunneling (1991) (1)
- Optical Spectroscopy of Excitons in Quantum Wells Under an Electric Field (1988) (1)
- Optical and Magnetic Properties of Diluted Magnetic Semiconductor Heterostructures (1991) (1)
- Growth and novel properties of magnetic heterostructures by molecular beam epitaxy (1991) (1)
- Measurement of the subband widths in semimetallic InAs-GaSb superlattices (1982) (1)
- a Perspective of the Development of Semiconductor Superlattices and Quantum Wells (1990) (1)
- Surface Science. Volume 228, Numbers 1-3, April (1) 1990. Proceedings of the International Conference (4th) on Modulated Semiconductor Structures Held in Ann Arbor, Michigan, on 17-21 July 1989. (1990) (0)
- Fast, transistoraehnliches semiconductor component- (1978) (0)
- Characterization of Interfacial Roughness in Semiconductor Heterostructures by X-Ray Reflectivity (1987) (0)
- Electronic Properties of Semiconductor Heterostructures in a Magnetic Field (1985) (0)
- Investigation of Local Structures Around Mn Atoms in In 1-x Mn x As Diluted Magnetic Semiconductors Using Exafs (1994) (0)
- QUANTUM HETEROSTRUCTURES: NEW ELECTRONIC MATERIALS (1991) (0)
- ROAD TO QUANTUM BOXES (1996) (0)
- Probing the structure of semiconductor superlattices and heterostructures (1986) (0)
- Magneto-optical absorption in GaSb-AlSb superlattices (1986) (0)
- RAMAN SCATTERING AND EXCITATION SPECTROSCOPY IN CdTe/CdMnTe SUPERLATTICES (1987) (0)
- Fermi-edge singularities and resonant magnetoexcitons in the optical spectra of GaAs/(Ga, AlAs) single quantum wells (1991) (0)
- Molecular beam epitaxy and device for its implementation (1978) (0)
- Studies of an InAs/GaAs Heterojunction by Total-Electron-Yield (1988) (0)
- Hot Electron Transport in Superlattices (1991) (0)
- Ultrafast spin dynamics in diluted magnetic semiconductor superlattices (1990) (0)
- System and growth process by molecular beam epitaxial with introduction of hydrogen (1978) (0)
- Injection Laser Structures with a Periodic Active Region. (1978) (0)
- Formation of Mn-As Centers in In1-xMnxAs Diluted Magnetic Semiconductors (1992) (0)
- Materials and Physics Aspects of Quantum Heterostructures (1991) (0)
- Raman Scattering Study of CdTe/CdMnTe Superlattices (1991) (0)
- High Pressure Optical Studies of GaSb-AlSb Multiple Quantum Wells (1989) (0)
- PERSPECTIVE AND PROSPECT OF SEMICONDUCTOR QUANTUM HETEROSTRUCTURES (1994) (0)
- Resonance Raman Scattering in [111]-Oriented CdTe/CdMnTe Superlattices (1989) (0)
- Monolithic semiconductor superlattice structure. (1986) (0)
- Ultrafast Magnetic and Electronic Spectroscopy in Dilute Magnetic Semiconductor Quantum Wells (1990) (0)
- Characteristics of electron tunneling in metal-insulator-degenerate semiconductor junctions (1967) (0)
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