Lester F. Eastman

Lester F. Eastman's AcademicInfluence.com Rankings

Lester F. Eastman

Physics

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Physics

Lester F. Eastman's Degrees

PhD Physics University of California, Santa Barbara
Masters Physics University of California, Santa Barbara
Bachelors Physics University of California, Santa Barbara

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Lester F. Eastman's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures (1999) (2327)
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures (2000) (1391)
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures (2002) (943)
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs (2000) (686)
Scattering of electrons at threading dislocations in GaN (1998) (563)
Transient electron transport in wurtzite GaN, InN, and AlN (1999) (513)
The role of dislocation scattering in n-type GaN films (1998) (369)
Undoped AlGaN/GaN HEMTs for microwave power amplification (2001) (356)
Surface charge accumulation of InN films grown by molecular-beam epitaxy (2003) (280)
pH response of GaN surfaces and its application for pH-sensitive field-effect transistors (2003) (272)
Electron transport in wurtzite indium nitride (1998) (272)
Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy (2001) (257)
Ballistic transport in semiconductor at low temperatures for low-power high-speed logic (1979) (251)
Planar-doped barriers in GaAs by molecular beam epitaxy (1980) (245)
Slow transients observed in AlGaN/GaN HFETs: effects of SiN/sub x/ passivation and UV illumination (2003) (221)
The toughest transistor yet [GaN transistors] (2002) (214)
Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs (1980) (197)
Improvement on epitaxial grown of InN by migration enhanced epitaxy (2000) (192)
Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure (1990) (185)
Comparison of high field electron transport in GaN and GaAs (1997) (171)
Surface and interface depletion corrections to free carrier-density determinations by hall measurements (1979) (170)
Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation (2003) (165)
Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire (2000) (152)
GaN/AlN-based quantum-well infrared photodetector for 1.55 μm (2003) (143)
Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors (2003) (142)
Mobility of electrons in bulk GaN and Al x Ga 1-x N/GaN heterostructures (2000) (142)
Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs (2001) (142)
Comparison of GaN HEMTs on Diamond and SiC Substrates (2007) (134)
Steady-State and Transient Electron Transport Within the III–V Nitride Semiconductors, GaN, AlN, and InN: A Review (2006) (133)
Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices (1999) (131)
Growth, fabrication, and characterization of InGaN solar cells (2008) (122)
Hot-phonon temperature and lifetime in a biased Al x Ga 1 − x N / G a N channel estimated from noise analysis (2003) (120)
Photoluminescence of AlxGa1−xAs grown by molecular beam epitaxy (1981) (117)
Surface chemical modification of InN for sensor applications (2004) (114)
CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz (1996) (112)
An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer (2002) (110)
Ultra-low resistive ohmic contacts on n-GaN using Si implantation (1997) (108)
Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency (1996) (108)
Electron drift velocity in AlGaN/GaN channel at high electric fields (2003) (105)
Room‐temperature exciton transitions in partially intermixed GaAs/AlGaAs superlattices (1988) (101)
Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy (1985) (99)
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures (2003) (98)
Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition (1986) (98)
Potential performance of indium-nitride-based devices (2006) (94)
Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunction (1984) (93)
Hot-phonon-induced velocity saturation in GaN (2004) (92)
Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistor (2002) (90)
The analysis of exponential and nonexponential transients in deep‐level transient spectroscopy (1981) (89)
Liquid phase epitaxial growth and characterization of high purity lattice matched GaxIn1-xAs ON <111>B InP (1980) (88)
Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis (2005) (88)
Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy (2003) (88)
Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements (2004) (87)
The Effect of an Fe-doped GaN Buffer on off-State Breakdown Characteristics in AlGaN/GaN HEMTs on Si Substrate (2006) (87)
The role of inefficient charge modulations in limiting the current-gain cutoff frequency of the MODFET (1988) (87)
AlGaN/GaN heterostructures on insulating AlGaN nucleation layers (1999) (85)
High performance AIGaN/GaN power switch with HfO2 insulation (2009) (83)
Nonlinear gain coefficients in semiconductor quantum-well lasers: effects of carrier diffusion, capture, and escape (1995) (83)
Hot-phonon effect on power dissipation in a biasedAlxGa1−xN∕AlN∕GaNchannel (2005) (82)
Near ballistic electron transport in GaAs devices at 77°K (1981) (81)
High-power broadband AlGaN/GaN HEMT MMICs on SiC substrates (2001) (80)
Defect structure and intermixing of ion-implanted AlxGa1−xAs/GaAs superlattices (1986) (78)
GaInAs‐AlInAs structures grown by molecular beam epitaxy (1981) (77)
Tunneling escape time of electrons from a quantum well under the influence of an electric field (1989) (76)
GaN based heterostructure for high power devices (1997) (73)
Luminescence line shape broadening mechanisms in GaInAs/AlInAs quantum wells (1985) (73)
Kink effect in submicrometer-gate MBE-grown InAlAs/InGaAs/InAlAs heterojunction MESFETs (1988) (71)
Effect of the surface and barrier defects on the AlGaN/GaN HEMT low-frequency noise performance (2003) (71)
0.12-μm gate III-V nitride HFET's with high contact resistances (1997) (70)
Monte Carlo simulation of electron transport in wurtzite aluminum nitride (1998) (70)
Influence of Field Plate on the Transient Operation of the AlGaN/GaN HEMT (2009) (68)
Reliability Evaluation of High Power AlGaN/GaN HEMTs on SiC Substrate (2001) (67)
75 Å GaN channel modulation doped field effect transistors (1996) (63)
Ultra low resistance ohmic contacts to n-GaAs (1979) (63)
High power monolithic AlGaN/GaN HEMT oscillator (2002) (63)
Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAs (1980) (63)
Optimization of high-speed metal-semiconductor-metal photodetectors (1994) (62)
Nonlinear gain coefficients in semiconductor lasers: effects of carrier heating (1996) (62)
Temperature dependence of performance of InGaN/GaN MQW LEDs with different indium compositions (2004) (61)
Optical and microwave performance of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs graded index separate confinement heterostructure single quantum well lasers (1990) (61)
A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates (1988) (61)
High-field effects in silicon nitride passivated GaN MODFETs (2003) (61)
Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs (on GaAs) MODFETs (1989) (59)
Influence of quantum-well width on device performance of Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As (on GaAs) MODFETs (1989) (57)
Optical phonon sidebands of electronic intersubband absorption in strongly polar semiconductor heterostructures. (2005) (57)
Intrinsic noise equivalent-circuit parameters for AlGaN/GaN HEMTs (2003) (55)
Reduced trapping effects and improved electrical performance in buried-gate 4H-SiC MESFETs (2003) (55)
Room‐temperature exciton electroabsorption in partially intermixed GaAs/AlGaAs quantum well waveguides (1989) (54)
Optical properties of GaInAs/AlInAs single quantum wells (1983) (53)
Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors (2000) (52)
Schottky barrier heights of molecular beam epitaxial metal‐AlGaAs structures (1981) (52)
Ballistic electron motion in GaAs at room temperature (1980) (51)
Ballistic electrons in semiconductors (1987) (50)
Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels (2003) (50)
Carrier compensation at interfaces formed by molecular beam epitaxy (1982) (50)
High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy (1999) (49)
A study of Ge/GaAs interfaces grown by molecular beam epitaxy (1981) (49)
Double heterostructure Ga0.47In0.53As MESFETs by MBE (1980) (48)
0.2- mu m gate-length atomic-planar doped pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.25/Ga/sub 0.75/As MODFETs with f/sub T/ over 120 GHz (1988) (48)
Results, Potential and Challenges of High Power GaN-Based Transistors (1999) (48)
Importance of electron scattering with coupled plasmon-optical phonon modes in GaAs planar-doped barrier transistors (1983) (48)
Effects of γ‐irradiation on AlGaN/GaN‐based HEMTs (2003) (48)
A gallium-nitride push-pull microwave power amplifier (2003) (47)
The polarization-induced electron gas in a heterostructure (2000) (47)
Theoretical model for polarization superlattices: Energy levels and intersubband transitions (2003) (46)
Impact ionization in high performance AlGaN/GaN HEMTs (2002) (46)
Low-frequency gain in MSM photodiodes due to charge accumulation and image force lowering (1996) (45)
Lattice‐strained heterojunction InGaAs/GaAs bipolar structures: Recombination properties and device performance (1987) (45)
Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures (1997) (45)
Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistor (1988) (44)
Strained-layer InGaAs-GaAs-AlGaAs lasers grown by molecular beam epitaxy for high-speed modulation (1991) (44)
Substrate current in GaAs MESFET's (1979) (44)
A high-current pseudomorphic AlGaAs/InGaAs double quantum-well MODFET (1988) (44)
Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditions (2003) (43)
Intersubband photoconductivity at 1.6μm using a strain-compensated AlN∕GaN superlattice (2005) (43)
Improvement of optical characteristics of Al0.48In0.52As grown by molecular beam epitaxy (1985) (43)
GaAlAs-GaAs ballistic hetero-junction bipolar transistor (1982) (41)
Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures (2010) (40)
Analysis of Schottky gate electron tunneling in polarization induced AlGaN/GaN high electron mobility transistors (1999) (39)
Passivation of AlGaN/GaN heterostructures with silicon nitride for insulated gate transistors (2000) (39)
Regenerative switching device using MBE-grown gallium arsenide (1982) (38)
Progress in High-Power, High Frequency AlGaN/GaN HEMTs (2002) (38)
Simulation study on breakdown behavior of field-plate SiC MESFETs (2004) (38)
Influence of lattice misfit on heterojunction bipolar transistors with lattice-mismatched InGaAs bases (1988) (36)
Influence of substrate temperature and InAs mole fraction on the incorporation of indium during molecular‐beam epitaxial growth of InGaAs single quantum wells on GaAs (1989) (36)
GaInP/InGaAs/GaAs graded barrier MODFET grown by OMVPE: design, fabrication, and device results (1996) (36)
Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy (1989) (36)
Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures (1999) (35)
Multiquantum well strained-layer lasers with improved low frequency response and very low damping (1992) (35)
Recessed gate GaN MODFETs (1997) (35)
Frequency performance enhancement of AlGaN/GaN HEMTs on diamond (2009) (35)
Hot electron induced degradation of undoped AlGaN/GaN HFETs (2003) (35)
High‐speed modulation of strained‐layer InGaAs‐GaAs‐AlGaAs ridge waveguide multiple quantum well lasers (1991) (35)
Steady-state electron transport in the III–V nitride semiconductors: A sensitivity analysis (2003) (34)
Growth of Thick InN by Molecular Beam Epitaxy (2002) (34)
Quantum mechanical reflection at triangular ‘‘planar‐doped’’ potential barriers for transistors (1982) (34)
0.1 μm gate length MODFETs with unity current gain cutoff frequency above 110 GHz (1988) (34)
Photodetectors based on intersubband transitions using III-nitride superlattice structures (2009) (34)
Demonstration of Low-Leakage-Current Low-On-Resistance 600-V 5.5-A GaN/AlGaN HEMT (2009) (34)
Electric current controlled growth and doping modulation in GaAs liquid phase epitaxy (1975) (34)
Laser-photoinduced etching of semiconductors and metals (1980) (34)
Tunneling effects and intersubband absorption in AlN/GaN superlattices (2005) (33)
Superlattice buffers for GaAs power MESFET’s grown by MBE (1984) (33)
Reflection high‐energy electron diffraction intensity oscillation study of Ga desorption from molecular beam epitaxially grown AlxGa1−xAs (1986) (33)
Rectification at n-n GaAs:(Ga,Al)As heterojunctions (1979) (33)
High-frequency, high-efficiency MSM photodetectors (1995) (33)
Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors (2004) (33)
Steady-state LPE growth of GaAs (1974) (33)
Steady-state and transient electron transport within bulk wurtzite zinc oxide (2010) (32)
Electrical characterization and alloy scattering measurements of LPE GaxIn1-xAs/InP for high frequency device applications (1981) (32)
Midinfrared intersubband absorption on AlGaN/GaN-based high-electron-mobility transistors (2002) (32)
Modulation-doped MBE GaAs/n-AlxGa1-xAs MESFETs (1981) (32)
A study of alloy scattering in Ga1−xAlxAs (1980) (32)
In situ in etching technique for l.p.e. InP (1976) (32)
Excess low-frequency noise in AlGaN'GaN-based high-electron-mobility transistors (2002) (31)
Molecular beam epitaxial GaAs‐AlxGa1‐xAs heterostructures for metal semiconductor field effect transistor applications (1981) (31)
dc and rf measurements of the kink effect in 0.2 μm gate length AlInAs/GaInAs/InP modulation‐doped field‐effect transistors (1989) (31)
Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular-beam epitaxy (1988) (30)
Comparison of compositionally graded to abrupt emitter‐base junctions used in the heterojunction bipolar transistor (1987) (30)
Correlation Between AlGaN/GaN MISHFET Performance and $ \hbox{HfO}_{2}$ Insulation Layer Quality (2011) (30)
Cascode connected AlGaN/GaN HEMTs on SiC substrates (2000) (30)
Investigations of MBE grown InN and the influence of sputtering on the surface composition (2004) (29)
High-speed logic at 300K with self-aligned submicrometer-gate GaAs MESFET's (1983) (29)
Hot-phonon lifetime in AlGaN/GaN at a high lattice temperature (2004) (29)
Ballistic and near ballistic transport in GaAs (1980) (29)
Observation of high-frequency high-field instability in GaAs/InGaAs/AlGaAs DH-MODFETs at K band (1988) (29)
Degradation characteristics of AlGaN-GaN high electron mobility transistors (2001) (29)
High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance (2007) (29)
The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis (2010) (28)
Measuring electronic structure of wurtzite InN using electron energy loss spectroscopy (2003) (28)
Polarization Induced Charge at Heterojunctions of the III–V Nitrides and Their Alloys (1999) (28)
Hot carrier and hot phonon effects on high-speed quantum well lasers (1993) (28)
Advances in materials, processing, and devices in III-V compound semiconductors (1989) (27)
Polar optical phonon instability and intervalley transfer in III-V semiconductors (2001) (27)
Comparison of the theoretical and experimental differential gain in strained layer InGaAs/GaAs quantum well lasers (1991) (27)
Purity of GaAs grown by LPE in a graphite boat (1976) (26)
Electroreflectance investigation of (Ga1−xAlx)0.47In0.53As lattice matched to InP (1983) (26)
Hot-phonon temperature and lifetime in biased 4H-SiC (2004) (25)
Si doping of high-Al-mole fraction AlxGa1−xN alloys with rf plasma-induced molecular-beam-epitaxy (2002) (25)
Fabrication and characterization of high breakdown voltage AlGaN∕GaN heterojunction field effect transistors on sapphire substrates (2006) (25)
Terahertz optical-Hall effect characterization of two-dimensional electron gas properties in AlGaN/GaN high electron mobility transistor structures (2011) (25)
An improved small-signal equivalent circuit model for III-V nitride MODFET's with large contact resistances (1997) (24)
Design criteria for GaAs MESFETs related to stationary high field domains (1980) (24)
Physical and materials limitations on burnout voltage of GaAs power MESFET's (1980) (24)
dc characterization of the AlGaAs/GaAs tunneling emitter bipolar transistor (1987) (24)
Microwave characterisation of 1 μm-gate AI 0.48 In 0.52 As/Ga 0.47 In 0.53 As/InP MODFETs (1987) (24)
Comparisons of microwave performance between single-gate and dual-gate MODFETs (1988) (24)
Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors (2000) (23)
GaN-on-diamond field-effect transistors: from wafers to amplifier modules (2010) (23)
Effects of substrate misorientation and background impurities on electron transport in molecular‐beam‐epitaxial‐grown GaAs/AlGaAs modulation‐doped quantum‐well structures (1987) (23)
High purity LPE InP (1978) (23)
Heterojunction bipolar transistor using pseudomorphic GaInAs for the base (1986) (23)
Very low resistance Au/Ge/Ni/Ag based Ohmic contact formation to Al0.25/Ga0.75As/GaAs and Al0.48In0.52As/Ga0.47In0.53As heterostructures: A behavioral comparison (1986) (23)
Narrow-channel GaInP/InGaAs/GaAs MODFETs for high-frequency and power applications (1997) (22)
Spectroscopic identification of Si donors in GaAs (1982) (22)
Variable angle spectroscopic ellipsometry - Application to GaAs-AlGaAs multilayer homogeneity characterization (1988) (22)
GaAs integrated circuits by selected‐area molecular beam epitaxy (1980) (22)
Comparative analysis of hot‐electron transport in AlGaN/GaN and AlGaN/AlN/GaN 2DEG channels (2005) (22)
Microwave characterization of very high transconductance MODFET (1984) (22)
Noise in near-ballistic n+nn+ and n+pn+ gallium arsenide submicron diodes (1983) (22)
GaAs n+-p−-n+ ballistic structure (1980) (21)
Electric current controlled liquid phase epitaxy of GaAs on N+ and semi-insulating substrates (1977) (21)
I—V characteristics of GaAs MESFET with nonuniform doping profile (1980) (21)
Dislocation structure, formation, and minority‐carrier recombination in AlGaAs/InGaAs/GaAs heterojunction bipolar transistors (1988) (21)
High Frequency AlGaN/GaN MODFET's (1997) (21)
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits. (1993) (21)
Hydrodynamic simulation of surface traps in the AlGaN/GaN HEMT (2009) (21)
Characterization of grain boundaries using deep level transient spectroscopy (1979) (21)
High-performance AlGaAs/GaAs MODFET'S with improved ohmic contacts (1986) (21)
C-doped semi-insulating GaN HFETs on sapphire substrates with a high breakdown voltage and low specific on-resistance (2007) (20)
Self-heating and microwave noise in AlGaN/GaN (2004) (20)
High-speed GaAlAs-GaAs heterojunction bipolar transistors with near-ballistic operation (1983) (20)
A molybdenium source, gate and drain metallization system for GaAs MESFET layers grown by molecular beam epitaxy☆ (1980) (20)
Effect of passivation on AlGaN/GaN HEMT device performance (2000) (20)
Hot‐electron microwave noise and power dissipation in AlGaN/AlN/GaN channels for HEMTs (2005) (19)
LSA operation of large volume bulk GaAs samples (1967) (19)
Dependence of the electrical characteristics of heavily Ge‐doped GaAs on molecular beam epitaxy growth parameters (1980) (19)
An investigation of gold-zinc contacts on n-type indium phosphide (1978) (19)
Optical quality GaInAs grown by molecular beam epitaxy (1982) (18)
Large-signal performance of deep submicrometer AlGaN/AlN/GaNHEMTs with a field-modulating plate (2005) (18)
Electrical measurements of the conduction band discontinuity of the abrupt Ge–GaAs 〈100〉 heterojunction (1983) (18)
Very-high-purity InP l.p.e. layers (1977) (18)
The effect of a high energy injection on the performance of mm wave Gunn oscillators (1988) (18)
Measurement of J/V characteristics of a GaAs submicron n+-n--n+ diode (1982) (18)
High-speed modulation of InGaAs-GaAs strained-layer multiple-quantum-well lasers fabricated by chemically assisted ion-beam etching (1991) (18)
Capped versus capless heat treatment of molecular beam epitaxial GaAs (1982) (18)
Gate field emission induced breakdown in power SiC MESFETs (2003) (18)
Hot-electron-temperature relaxation time in a two-dimensional electron gas: AlGaN/GaN at 80 K (2002) (17)
Preparation and properties of molecular beam epitaxy grown (Al0.5Ga0.5)0.48In0.52As (1982) (17)
The sensitivity of the steady-state electron transport within bulk wurtzite zinc oxide to variations in the non-parabolicity coefficient (2011) (17)
High peak-power LSA operation from epitaxial GaAs (1970) (17)
Effect of substrate annealing and V: III flux ratio on the molecular beam epitaxial growth of AlGaAs-GaAs single quantum wells (1983) (17)
Optical and RF characteristics of short-cavity-length multiquantum-well strained-layer lasers (1991) (16)
Anisotropic transport in modulation‐doped quantum‐well structures (1987) (16)
Theory of the GaN crystal diode: Negative mass negative differential resistance (2005) (16)
GaAs/GaAlAs quantum well laser with a lateral spatial variation in thickness grown by metalorganic chemical vapor deposition (1987) (16)
Orientation effect reduction through capless annealing of self‐aligned planar GaAs Schottky barrier field‐effect transistors (1983) (16)
Vertical electron transistor (VET) in GaAs with a heterojunction (AlGaAs-GaAs) cathode (1984) (15)
Quarter-micron gate length microwave high electron mobility transistor (1983) (15)
Carrier energy relaxation time in quantum-well lasers (1995) (15)
Lateral polarity heterostructures by overgrowth of patterned Al x Ga 1-x N nucleation layers (2000) (15)
GaN Materials for High Power Microwave Amplifiers (1998) (15)
Breakdown of thermionic emission theory for quantum wells (1994) (14)
Comprehensive study of Ohmic electrical characteristics and optimization of Ti∕Al∕Mo∕Au multilayer Ohmics on undoped AlGaN∕GaN heterostructure (2005) (14)
Carrier capture and escape in multisubband quantum well lasers (1994) (14)
Ultrafast hole-burning in intersubband absorption lines of GaN/AlN superlattices (2006) (14)
Evaluation of ’’barrier’’ metals for sintered platinum–GaAs contacts (1976) (14)
Effects of ion implantation on deep levels in GaAs (1979) (14)
High power pulsed microwave generation in gallium arsenide (1967) (14)
Recent advances in III-V nitride electron devices (1996) (14)
Measurement of nonuniform distribution of strain in InGaAs/GaAs quantum wires (1994) (14)
Current Transport in Al/InAlAs/InGaAs Heterostructures (1982) (13)
Hot-electron transport in 4H-SiC (2005) (13)
The identification of dark‐line defects in AlGaAs/InGaAs/GaAs heterostructures (1988) (13)
The Growth of Uniform Submicron GaAs Layers by Liquid Phase Epitaxy (1976) (13)
High-Speed Direct Modulation of Semiconductor Lasers (1997) (13)
Heteroepitaxial molecular beam epitaxial InSb and room temperature operation of its metal‐insulator‐semiconductor field‐effect transistors (1986) (13)
HOT-PHONON LIMITED ELECTRON ENERGY RELAXATION IN AlN/GaN (2002) (13)
Perturbation of charges in AlGaN/GaN heterostructures by ultraviolet laser illumination (2004) (13)
Fabrication and performance of 0.1- mu m gate-length AlGaAs/GaAs HEMTs with unity current gain cutoff frequency in excess of 110 GHz (1988) (12)
Growth of GaAs‐Al‐GaAs by migration‐enhanced epitaxy (1988) (12)
IIA-3 enhancement of 2DEG density in GaAs/InGaAs/AlGaAs double heterojunction power MODFET structures by buried superlattice and buried p+-GaAs buffer layers (1987) (12)
Vertical integration of an In/sub 0.15/Ga/sub 0.85/As modulation-doped field effect transistor and GaAs laser grown by molecular beam epitaxy (1990) (12)
Summary Abstract: Internal photoemission studies of (GaIn)As, (AlIn)As Schottky diodes and (GaIn)As/(AlIn)As heterojunction grown by molecular beam epitaxy (1985) (12)
Extremely high electron mobilities in modulation-doped GaAs-AlxGa1-xAs heterojunction superlattices (1981) (12)
The steady-state optical response of the homojunction triangular barrier photodiode (1982) (12)
Electrical properties of InGaN grown by molecular beam epitaxy (2008) (12)
GaInAs-AlInAs heterostructures for optical devices grown by MBE (1983) (12)
Thermal effects of the operation of high average power Gunn devices (1970) (12)
Monte Carlo evaluation of an analytical model for nonequilibrium-phonon-induced electron velocity saturation in GaN (2007) (12)
Dependence of electron mobility on spacer thickness and electron density in modulation-doped Ga0.47In0.53As/Al0.48In0.52As heterojunctions (1983) (11)
The structure of InAs/GaSb superlattices (1989) (11)
Heat treatment of semi‐insulating chromium‐doped gallium arsenide substrates with converted surface removed prior to molecular beam expitaxial growth (1983) (11)
Effects of nonuniform well width on compressively strained multiple quantum well lasers (1992) (11)
Double modulation-doped AlGaAs/InGaAs heterostructure with a graded composition in the quantum well (1992) (11)
Strain effects on normal incidence hole intersubband absorption in a p-type semiconductor quantum well (1992) (11)
Long‐wavelength λc=18 μm infrared hot‐electron transistor (1994) (11)
The liquid phase epitaxial growth of high purity Ga (1-x)Al(x)As (1979) (10)
Bias-Dependent Microwave Characteristics of Atomic Planar-Doped AIGaAs/InGaAs/GaAs Double Heterojunction MODFET's (Short Paper) (1987) (10)
Validation of an analytical large signal model for AlGaN/GaN HEMT's on SiC substrates (2000) (10)
Design, fabrication, and characterization of ultra high speed AlGaAs/InGaAs MODFETs (1988) (10)
Short-channel effects in 0.5-µm source-drain spaced vertical GaAs FET's—A first experimental investigation (1983) (10)
Ion Beam Analysis of Molecular Beam Epitaxy InAlAs / InGaAs Layer Structures (1981) (10)
Electron transport across the abrupt Ge‐GaAs n‐n heterojunction (1981) (10)
Electron Transport Within III-V Nitride Semiconductors (2017) (10)
An analysis of GaAs LPE growth methods by a diffusion limited growth model (1976) (10)
Fabrication and characterization of ultrashort gate length GaAs field‐effect transistors (1988) (10)
Summary Abstract: Effects of high levels of Be in GaAs by MBE (1985) (10)
Characterization of MG-doped InGaN and InALN alloys grown by MBE for solar applications (2008) (10)
Effect of thermionic‐field emission on effective barrier height lowering in In0.52Al0.48As Schottky diodes (1993) (10)
A Semi-Analytical Interpretation of Transient Electron Transport in Gallium Nitride, Indium Nitride, and Aluminum Nitride (1998) (10)
Electric and Morphology Studies of Ohmic Contacts on AlGaN/GaN (2000) (10)
Dynamic loadline analysis of AlGaN/GaN HEMTs (2002) (9)
The behavior of unintentional impurities in Ga0.47 In0.53As grown by MBE (1985) (9)
Organometallic vapor phase epitaxial growth of GaInP/GaAs (AlGaAs) heterostructures (1986) (9)
Formation of a quasi-two-dimensional electron gas in GaN/AlxGa1−xN heterostructures with diffuse interfaces (2004) (9)
High‐current lattice‐strained In0.59Ga0.41As/In0.52Al0.48As modulation‐doped field‐effect transistors grown by molecular beam epitaxy (1990) (9)
Resistivity increase in MBE Ga0.47In0.53As following ion bombardment (1981) (9)
Carrier DC and AC capture and escape times in quantum-well lasers (1995) (9)
STRAIN-INDUCED SHIFT IN PHOTOLUMINESCENCE ENERGY IN IN0.2GA0.8AS/GAAS QUANTUM WIRES (1995) (9)
Infrared hot‐electron transistor with a narrow bandpass filter for high temperature operation (1995) (9)
Passivation Effect on Channel Recessed 4H-SiC MESFETs (2003) (9)
Electrical bias stress related degradation of AlGaN/GaN HEMTs (2003) (9)
Use of pseudomorphic GaInAs in Heterojunction Bipolar Transistors (1987) (9)
Low-resistance Ohmic contacts developed on undoped AlGaN/GaN-based high electron mobility transistors with AlN interlayer (2006) (9)
Influence of low-field-mobility-related issues on SiC metal-semiconductor field-effect transistor performance (2005) (9)
A THz-range planar NDR device utilizing ballistic electron acceleration in GaN (2011) (9)
Novel multilayer modulation doped (Al,Ga)As/GaAs structures for self-aligned gate FETs (1984) (9)
Normal and Inverted Algan/Gan Based Piezoelectric Field effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy (1998) (9)
Optimization of 3D-SMODFETs on GaAs and InP substrates with a simple analytical model (1995) (9)
Grating Demultiplexer Integrated with MSM Detector Array in InGaAs/AlGaAs/ GaAs for WDM (1993) (9)
A new 4H-SiC normally off lateral channel vertical JFET with extremely low power losses: source inserted double-gate structure with a supplementary highly doped region (2005) (9)
Activation characteristics of a long wavelength infrared hot‐electron transistor (1994) (8)
Phase noise study of AlGaN/GaN HEMT X-band oscillator (2005) (8)
III-V heterojunction field effect transistor using indium alloys (1986) (8)
Reduction of Be diffusion in GaAs by migration‐enhanced epitaxy (1989) (8)
GaN/SiC heterojunction bipolar transistors (2000) (8)
Instabilities in the growth of AlxGa(1−x)As/Al/AlyGa(1−y)As structures by molecular beam epitaxy (1982) (8)
Stability of AlGaN/GaN high-power HEMTs under DC and RF stresses (2004) (8)
Low-temperature scanning tunneling microscope-induced luminescence of GaN (1998) (8)
Rectification at n‐GaAs–n‐Ga0.7Al0.3As heterojunctions grown by liquid phase epitaxy (1979) (8)
Low frequency and microwave characterization of submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular‐beam epitaxy (1989) (8)
The Velocity-Field Characteristic Of Indium Nitride (1997) (8)
Fast and Ultrafast Processes in AlGaN/GaN Channels (2002) (8)
Influence of an intentional substrate misorientation on deep electron traps in AlGaAs grown by molecular beam epitaxy (1987) (8)
Material properties of bulk InGaAs and InAlAs/InGaAs heterostructures grown on (111)B and (111)B misoriented by 1° towards 〈211〉 InP substrates (2000) (8)
High breakdown voltage AlGaN/GaN heterojunction field effect transistors on sapphire (2008) (8)
Nonuniformities in GaN/AlN quantum wells (2003) (8)
Influence of Substrate Temperature on the Growth of AlGaAs/GaAs Quantum Well Heterostructures by Organometallic Vapor Phase Epitaxy (1983) (8)
Electron transport in the III-V nitride alloys (1999) (8)
Reduction of gate resistance in tenth-micron gate MODFETs for microwave applications (1988) (8)
High speed high power AlGaN/GaN heterostructure field effect transistors with improved ohmic contacts (1998) (8)
MBE growth and characterization of Mg-doped InGaN and InAlN (2008) (7)
An analytical model for I-V and small-signal characteristics of planar-doped HEMTs (1989) (7)
Sheet electron concentration at the heterointerface in Al0.48In0.52As/Ga0.47In0.53As modulation-doped structures (1985) (7)
Ohmic contact using the Si nano-interlayer for undoped-AlGaN/GaN heterostructures (2006) (7)
Increase of electrical activation and mobility of Si-doped GaAs, grown at low substrate temperatures, by the migration-enhanced epitaxy method (1990) (7)
Elimination of current instability and improvement of RF power performance using Si3N4 passivation in SiC lateral epitaxy MESFETs (2004) (7)
As2-ambient activation and alloyed-ohmic-contact studies of Si+-ion-implanted Al0.3Ga0.7As/GaAs modulation-doped structures (1986) (7)
Improved GaAs/AlGaAs quantum‐well heterostructures by organometallic vapor‐phase epitaxy (1986) (7)
Dependence of electron temperature on well width in the Al 0.48 In 0.52 As/Ga 0.47 In 0.53 As single-quantum well (1986) (7)
High speed optical detectors for monolithic millimeter wave integrated circuits (1993) (7)
The effect of As4 pressure on material qualities of AlGaAs/GaAs heterostructures grown on (111)B GaAs substrates (2000) (7)
A study of the conduction properties of a rectifying nGaAs-n(Ga, Al)As heterojunction (1980) (7)
EXPERIMENTAL STUDIES OF BALLISTIC TRANSPORT IN SEMICONDUCTORS (1981) (7)
Dependence of power and efficiency of AlGaN/GaN HEMTs on the load resistance for class B bias (2002) (7)
Size‐dependent photoluminescence energy and intensity of selective electron cyclotron resonance‐etched strained InGaAs/GaAs quantum boxes (1995) (7)
I/V anomality and device performance of submicrometre-gate Ga0.47In0.53As/Al0.48In0.52As HEMT (1988) (6)
Sb induced nucleation of InSb on (III) InSb substrates by molecular beam epitaxy (1985) (6)
Submicron GaAs vertical electron transistor (1982) (6)
Non-equilibrium carrier transport in the base of heterojunction bipolar transistors (1996) (6)
1.40 eV emission band in GaAs (1982) (6)
Velocity Overshoot And Ballistic Electron Transport In Wurtzite Indium Nitride (1997) (6)
High frequency noise of epitaxial graphene grown on sapphire (2013) (6)
Growth and Characterization of High Purity Lattice Matched GaInAs on InP (1979) (6)
Optical and microwave performance of GaAs-AlGaAs and strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement heterostructure single quantum well lasers (1989) (6)
Characterization of low-temperature grown AlSb and GaSb buffer layers (1997) (6)
A high voltage-gain GaAs vertical field-effect transistor with an InGaAs/GaAs planar-doped barrier launcher (1990) (6)
Carrier energy relaxation in multisubband quantum well lasers with hot phonon effects (1994) (6)
Use of molecular beam epitaxy in research and development of selected high speed compound semiconductor devices (1983) (6)
Low resistance alloyed ohmic contacts to Al0.48In0.52As/n+-Ga0.47In0.53As (1984) (6)
Time-domain characterization of nonlinear operation of an AlGaN/GaN HEMT (2003) (6)
Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces (2001) (6)
Growth limitations of strained multiple quantum wells (1994) (6)
Electron velocity enhancement by planar-doped barrier source in GaAs vertical FET (1988) (6)
Gallium arsenide microwave bulk and transit-time devices (1972) (6)
Self-aligned GaAs gate heterojunction SISFET (1987) (6)
GaAs planar doped barriers by molecular beam epitaxy (1980) (6)
GaN photovoltaic leakage current and correlation to grain size (2010) (6)
Chapter 2 Device Applications of Strained-Layer Epitaxy (1990) (6)
Barrier Material Improvement in AlGaN/GaN Microwave Transistors Under Gamma Irradiation Treatment (2003) (6)
The Influence of Spontaneous and Piezoelectric Polarization on Novel AlGaN/GaN/InGaN Device Structures (1999) (5)
Effect of drain-to-source spacing of AlGaN/GaN transistor on frequency response and breakdown characteristics (2003) (5)
Narrow channel GaInP/InGaAs/GaAs MODFET grown by MBE with record 2-DEG density for high frequency and power applications (1996) (5)
Modulation Efficiency Limited High Frequency Performance of the MODFET (1987) (5)
Double heterojunction GaInAs devices by MBE (1980) (5)
Effects of an Fe-doped GaN Buffer in AlGaN/GaN Power HEMTs on Si Substrate (2006) (5)
The investigation of properties of electron transport in AlGaN/GaN heterostructures (2003) (5)
Intrinsic noise characteristics of AlGaN/GaN HEMTs (2002) (5)
High speed high power AlGaN/GaN heterostructure field effect transistors with improved ohmic contacts (1997) (5)
IVA-2 self-aligned submicron ion-implanted GaAs MESFETs for high-speed logic (1983) (5)
Effect of Growth Conditions on Optical Response of GaAs Grown at Low Substrate Temperature by MBE (1991) (5)
Submicron‐gate In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As heterojunction metal‐semiconductor field‐effect transistors grown by molecular beam epitaxy (1989) (5)
Hot electron effects on undoped AlGaN/GaN high electron mobility transistors (2002) (5)
Dislocations in GaAs/Si Interfaces (1988) (5)
Oxygen stabilization of molecular beam epitaxial Al‐GaAs Schottky barrier heights (1982) (5)
Low‐Frequency Noise in AlGaN/GaN High Electron Mobility Transistors Irradiated by γ‐Ray Quanta (2003) (5)
Summary Abstract: High conductance and low persistent photoconductivity in Ga0.47In0.53As/Al0.48In0.52As modulation‐doped structures with Pinchoff capabilities (1985) (5)
High Power, Broadband, Linear, Solid State Amplifier. (1999) (5)
Low-Energy Electron-Excited Nanoluminescence Studies of GaN and Related Materials (2002) (5)
Photoluminescence of OMVPE grown AlGaAs: The effect of composition, doping and the substrate (1984) (5)
Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy (2001) (4)
VA-7 GaAs planar doped barrier transistors (1981) (4)
Fabrication and Characterization of Thin-Barrier $ \hbox{Al}_{0.5}\hbox{Ga}_{0.5}\hbox{N/AlN/GaN}$ HEMTs (2011) (4)
Current-Voltage Characteristics, Small-Signal Parameters, Switching Times and Power-Delay Products of GaAs MESFET's (1978) (4)
Residual impurities in high purity GaAs epitaxial layers grown by liquid phase epitaxy (1980) (4)
Very high electron velocity in short gallium arsenide structures (1982) (4)
Microwave semiconductor devices: State-of-the-art and limiting effects (1978) (4)
The observation of stacking-fault tetrahedra in III-V compounds (1987) (4)
A current-controlled negative-resistance effect in indium antimonide (1966) (4)
Semi‐insulating GaAs substrates for integrated circuit devices: promises and problems (1979) (4)
Strained AlGaInAs/AlGaAs quantum wells and quantum-well lasers grown by molecular beam epitaxy (1993) (4)
GaInP/GaInAs/GaAs structures for high performance MODFETs. Design, growth procedure, Hall data and device properties (1995) (4)
Large-signal time-domain simulation of HEMT mixers (1988) (4)
Enhancement of the electron velocity in GaAlAs-GaAs heterojunction bipolar transistor with abrupt emitter-base interface (1982) (4)
High temperature operation of AlInAs/InGaAs/AlInAs 3D-SMODFETs with record two-dimensional electron gas densities (1996) (4)
Modelling of Hot Electron Effects in GaN/AlGaN HEMT with AlN Interlayer (2007) (4)
Transverse magnetoresistance in GaAs two terminal submicron devices: A characterization of electron transport in the near ballistic regime (1980) (4)
WA-B6 ballistic electron transport in thin layers of GaAs (1980) (4)
Optimized growth of GRIN-SCH quantum well lasers by low pressure organometallic vapor phase epitaxy (1985) (4)
Compound‐Semiconductor Transistors (1986) (4)
Fabrication and Characterization of Thin-Barrier HEMTs (2011) (4)
Design optimization of 600 V SiC SITs for high power and high frequency operation (2005) (4)
High efficiency CW transferred-electron oscillator with optimized doping profile (1976) (4)
High-electric-field Induced Trap Generation in AlGaN/GaNHeterostructure Field-effect Transistors (2009) (3)
High-speed MSM photodetectors for millimeter waves (1992) (3)
The effect of subband quantization in the 2-D electron gas on thermionic current and heterojunction capacitance in an n-AlxGa1−xAs/n-GaAs heterojunction (1986) (3)
IIA-4 The effect of buried p-doped layers on the current saturation mechanism in AlGaAs/InGaAs/GaAs MODFET's (1987) (3)
Multiaxis radial circuit for transferred-electron devices (1972) (3)
The use of substrate annealing as a gettering technique prior to molecular beam epitaxial growth (1984) (3)
Design, fabrication and characterization of GaN-based HFET's (1997) (3)
The current and velozity distributions in a velocity modulated, brillouin-focused electron beam (1963) (3)
Optimization of the spacer layer thickness in AlInAs/InGaAs/InP MODFETs (1996) (3)
High-speed short cavity strained-layer multiple quantum well lasers (1991) (3)
High-speed optical devices and their integration with transistors (1993) (3)
Preparation of InN and InN-Based Heterostructures by Molecular Beam Epitaxy (2001) (3)
Transconductance dependence on gate length for GaAs gate SISFETs (1987) (3)
Use of current controlled GaAs l.p.e. for optimum doping profiles in l.s.a. diodes (1978) (3)
2DEGs and 2DHGs Induced by Spontaneous and Piezoelectric Polarization in AlGaN/GaN Heterostructures (2000) (3)
A new negative resistance effect in indium antimonide (1965) (3)
Channeling analysis of MBE InAlAs/InGaAs interfaces (1981) (3)
Raman spectroscopy study of Al0.48In0.52As/InP (1987) (3)
Temperature effects on the high speed performance of quantum well lasers (1995) (3)
Low resistance alloyed NiGeAuAgAu ohmic contacts to modulation-doped Al0.48In0.52As/Ga0.47In0.53As (1986) (3)
Modulation of Surface Barrier in AlGaN/GaN Heterostructures (2002) (3)
Electrical properties of InN grown by molecular beam epitaxy (2004) (3)
Subnanometer analysis of molecular beam epitaxy grown ternary arsenides (1997) (3)
A novel method for the growth of good quality GaAs at extremely low substrate temperatures (as low as 120 °C) (1990) (3)
Comment on "Single-carrier space-charge controlled conduction vs. ballistic transport in GaAs devices at 77°K" (1982) (3)
Summary Abstract: Influence of substrate misorientation on defect and impurity incorporation in AlGaAs/GaAs heterojunctions grown by molecular‐beam epitaxy (1988) (3)
NOVEL HIGH TEMPERATURE ANNEALED SCHOTTKY METAL FOR GaN DEVICES (2011) (3)
SIMULATION AND EXPERIMENTAL RESULTS ON GaN BASED ULTRA-SHORT PLANAR NEGATIVE DIFFERENTIAL CONDUCTIVITY DIODES FOR THz POWER GENERATION (2009) (3)
Steady-State and Transient Electron Transport in ZnO: Recent Progress (2011) (3)
Phonon scattering suppression in short periodic AlAs/GaAs multiple‐quantum‐well structures (1994) (3)
High Breakdown Voltage and Low Specific On-resistance C-doped GaN-on-sapphire HFETs for Low-loss and High-power Switching Applications (2007) (3)
Summary Abstract: Surface and interface proximity effect on quantum well electron mobilities in modulation doped GaAs/AlxGa1−xAs heterostructures (1981) (2)
High-speed GaAs heterojunction bipolar phototransistor grown by molecular beam epitaxy (1983) (2)
Carrier Deconfinement Limited Velocity In Pseudomorphic AlGaAsiin GaAs Modulation-doped Field Effect Transistors (MODFET's) (1987) (2)
Scattering limitations on electron transit velocity in AlGaN/GaN HEMTs (2003) (2)
Si diffusion in GaInAs‐AlInAs high‐electron‐mobility transistor structures (1986) (2)
Reduction of emitter thickness in AlGaAs/GaAs heterojunction bipolar transistor (1989) (2)
Nonuniform distribution of strain in InGaAs/GaAs quantum wires (1995) (2)
Summary Abstract: Compound semiconductor structures for high speed, high frequency devices (1983) (2)
Gallium arsenide and related compounds (St. Louis), 1976 : proceedings of the Sixth International Symposium on Gallium Arsenide and Related Compounds, St. Louis Conference, 26-29 September 1976 (1977) (2)
A high efficiency CW transferred-electron oscillator with optimized doping profile (1974) (2)
Differential gain and damping factor in strained inGaAs/GaAs quantum well lasers (1992) (2)
Influence of quantum well width on DC and RF device performance in pseudomorphic Al/sub 0.30/Ga/sub 0.70/As/In/sub 0.25/Ga/sub 0.75/As MODFETs (1988) (2)
Channel Recessed 4H-SiC MESFETs with F t of 14.5GHz and F max of 40GHz (2002) (2)
Influence of Si3N4 passivation on surface trapping in SiC metal-semiconductor field-effect transistors (2004) (2)
RF and DC characterization of P-channel Al/sub 0.5/Ga/sub 0.5/As/GaAs MODFETs with gate lengths as small as 0.25 mu m (1989) (2)
Analytical cascode model of buried-gate SiC MESFETs (2004) (2)
Power limits of polarization-induced AlGaN/GaN HEMT's (2000) (2)
High-frequency performance of lattice-strained heterojunction GaInAs/GaAs bipolar transistors (1986) (2)
Determination of electron energy distribution in a GaAs vertical field‐effect transistor with hot‐electron injection (1989) (2)
High-Speed Electronics and Device Scaling (1990) (2)
Electron Transport and Microwave Noise in MBE- and MOCVD-Grown AlGaN/AlN/GaN (2005) (2)
Effects of Transparent Pt Metal Layer on Performance of InGaN/GaN Multiple-Quantum Well Light-Emitting Diodes (2003) (2)
Femtosecond intersubband dynamics of electrons in AlGaN/GaN-based high-electron-mobility transistors (2004) (2)
Temperature dependence of light-output performance of InGaN/GaN multiple-quantum-well light-emitting diodes with various In compositions (2004) (2)
Erratum: Rectification at n-n GaAs:(Ga,Al)As heterojunctions (1979) (2)
GaN ballistic negative-differential-conductivity diode for potential THz applications (2007) (2)
Analysis of abrupt emitter-base heterojunctions by multi-flux method and self-consistent solution of Schrödinger and Poisson equations (1996) (2)
Research on GaN MODFET's (1996) (2)
Novel vertical GaAs FET structure with submicrometre source-to-drain spacing (1983) (2)
Fabrication and characterization of InGaAs/GaAs strained quantum wires grown by molecular beam epitaxy (1993) (2)
Trade-offs and challenges of short channel design on millimetre-wave power performance of GaN HFETs (2005) (2)
Frequency limitations of transferred electron devices related to quality of contacts (1978) (2)
Frequency and breakdown properties of AlGaN/GaN HEMTs (2003) (2)
High-speed electronics and device scaling : 18-19 March 1990, San Diego, California (1990) (2)
Polar Optical Phonon Instability and Intervalley Transfer in Gallium Nitride (1998) (2)
The Capabilities and State of the Art of Gunn and LSA Devices (1969) (2)
Exciton transport in optically excited AlxGa1−xAs‐GaAs single quantum well (1984) (2)
THE DEFECT STRUCTURE OF ION-IMPLANTED Al x Ga 1−x As/GaAs SUPERLATFICES (1985) (2)
BALLISTIC ELECTRON ACCELERATION NEGATIVE-DIFFERENTIAL-CONDUCTIVITY DEVICES (2006) (2)
Low frequency noise parameters in an AlGaN/GaN heterostructure with 33% and 75% Al mole fraction (2004) (2)
The influence of transistor nonlinearities on intrinsic noise (2004) (1)
Modulation characteristics of short-cavity strained-layer lasers (1992) (1)
1.3 μm lasers on GaAs(111)B employing ordered (InAs)1(GaAs)1 quantum wells for high frequency response applications (1997) (1)
High performance chip to substrate interconnects utilizing embedded structure (1999) (1)
A study of L-band GaAlAs/GaAs HBTs for high-voltage RF-power (2000) (1)
A New Approach to Maximizing the Power Handling Capability in Recessed-Gate Silicon Carbide Static Induction Transistors (2005) (1)
Sample preparation technique for cross‐sectional transmission electron microscopy of quantum wire structures (1993) (1)
Cryogenic noise performance of OMVPE-grown InGaAs/InP MODFET (1990) (1)
Resonant tunnelling and intersubband absorption in AlN – GaN superlattices (2005) (1)
A vertical field-effect transistor with an InGaAs/GaAs pseudomorphic planar doped barrier launcher (1989) (1)
Observation of ballistic transport in hot-electron vertical FET spectrometer using ultrathin planar-doped barrier launcher (1991) (1)
Processing And DC Performance Of Self-Aligned GaAs Gate SISFET (1987) (1)
Direct-write composition patterning of InGaN by focused thermal beam during molecular-beam epitaxy (2007) (1)
High‐quality strained quantum wires grown by molecular beam epitaxy on (100) GaAs substrate (1994) (1)
Gallium nitride based ballistic electron acceleration negativedifferentialconductivity diodes for potential THZ applications (2005) (1)
Avalanche diode microwave noise generation experiments (1967) (1)
The Characterization of Alloyed NiGeAuAgAu Ohmic Contacts to AlInAs/GaInAs Heterostructure by Auger Electron Spectroscopy and Wavelength Dispersive X-Ray Analysis (1985) (1)
Novel triangular barrier transistor for use in the integrated photoreceiver (1983) (1)
Space Charge Effects On Heterojunction Cathode (al-Ga)as Gunn Oscillators (1987) (1)
Strained layer device epitaxy on patterned substrates [MODFETs] (1993) (1)
Advanced modelling of GaN/AlGaN HEMT devices with field plate (2007) (1)
Modeling of hole tunneling in polarization-based contacts to wurtzite p-type Gallium Nitride using thin indium Gallium Nitride caps (2009) (1)
Optimised HEMT structure with an Al0.45 Ga0.55As spacer and an Al0.20Ga0.80As doped region (1985) (1)
The Effect of Channel Recess and Passivation on 4H-SiC MESFETs (2002) (1)
Monolithic millimeter wave optical receivers (1996) (1)
High Speed Laser Diodes (1992) (1)
Anisotropic transport in modulation doped quantum well structures (1987) (1)
Femtosecond intersubband dynamics of electrons in AlGaN/GaN high-electron-mobility transistors (2003) (1)
Phonon sidebands of intersubband absorption in AlGaN/GaN high-electron-mobility transistors (2006) (1)
Progress in High Frequency Heterojunction Field Effect Transistors (1990) (1)
MODFET noise model and properties with hot-electron effects (1989) (1)
Surface trapping effects observed in AlGaN/GaN HFETs and heterostructures (2002) (1)
Growth of non-polar a -plane and cubic InN on r -plane sapphire by molecular beam epitaxy (2003) (1)
Dependence of t.e.o. efficiency on NL product (1975) (1)
0.2-pm Gate-Length Atomic-Planar Doped Pseudomorphic Alo 3Gao. 7As/Ino .25G~. 75As MODFET's with fT over 120 GHz (1988) (1)
Comment on "Digital logic-circuit applications of Gunn diodes" (1968) (1)
Characterisation of Al/AlInAs/GaInAs heterostructures (1981) (1)
A high performance 0.12 um T-shape gate Ga0.5In0.5As/Al0.5In0.5As MODFET grown by MBE lattice mis-matched on a GaAs substrate (1987) (1)
A MODFET process for micrometer scale strained layer islands (1994) (1)
Improved performance by optimised planar doped barrier launcher in GaAs vertical FET with very short channel width (1989) (1)
Scattering of electrons at threading dislocations in GaN and consequences for current transport in vertical devices (1997) (1)
Assessment of Solid State Replacement of TWT Amplifiers for Satellite Communications (1976) (1)
The triangular barrier switch (1982) (1)
GROWTH OF PLANAR DOPED BARRIER STRUCTURES IN GALLIUM ARSENIDE BY MOLECULAR BEAM EPITAXY (1982) (1)
Strained-layer quantum well lasers grown by molecular beam epitaxy for longer wavelength high-speed applications (1990) (1)
Strained GaLnAs Quantum Well Lasers Grown By Molecular Beam Epitaxy For Improved Microwave Frequency Modulation Bandwidths (1990) (1)
Microwave characterization of corner reflector p-doped multiple quantum-well lasers (1995) (1)
AlGaN/GaN microwave power HEMT's (1999) (1)
Erratum: Ultra low resistance ohmic contacts to n-GaAs (1980) (1)
Proceedings 2000 IEEE/CornelI Conference on High Performance Devices (2000) (1)
Single and Multiple Quantum Well Strained Layer InGaAs-GaAs-AlGaAs Lasers Grown by Molecular Beam Epitaxy (1990) (1)
15th Symposium on Electron, Ion, and Photon Beam Technology : AVS Symposium on High-Speed, High-Frequency Integrated Circuits (1979) (1)
Summary Abstract: Mn redistribution in doped GaInAs (1986) (1)
Extremely high peak specific transconductance AlGaAs/GaAs heterojunction bipolar transistors (1989) (1)
AlGaN/GaN lateral polarity heterostructures (2001) (1)
AlGaN/GaN microwave power HEMTs (1999) (1)
AlGaN/GaN-on-Diamond HEMT Recent Progress (2009) (0)
Quantum-well interdiffusion for integrated photonics (1991) (0)
InGaAs-GaAs strained layer multiple quantum well lasers fabricated by chemically assisted ion beam etching (1991) (0)
Electrical Performance of Ta-Based Ohmic Contacts on Undoped AlGaN/AlN/GaN Heterostructures (2006) (0)
Two-Dimensional Electron Dynamics in GaN/AlGaN Heterostructures (2003) (0)
INVESTIGATION OF LINEAR BEAM AND NEW CONCEPTS OF MICROWAVE POWER GENERATION. (1964) (0)
IIA-3 large area photoconductive detector in Ga<inf>0.53</inf>In<inf>0.47</inf>As with large gain-bandwidth product (1981) (0)
Scanning tunneling microscope-induced and scanning electron microscope-induced cathodoluminescence of GaN grown by molecular beam epitaxy (1997) (0)
WA-B4 Leakage current in GaAs MESFET's with GaAs and Ga1-xAlxAs buffer layers (1980) (0)
Study of Cryogenic MODFETS (1987) (0)
INVESTIGATION OF NEW CONCEPTS AND LINEAR BEAM TECHNIQUES FOR MICROWAVE GENERATION. (1966) (0)
Progress inHigh Frequency Heterejunction Field Effect Transistors (1990) (0)
Lattice-Strained Double Heterojunction InGaAs/GaAs Bipolar Transistors (1986) (0)
Strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement single quantum well lasers grown by molecular-beam epitaxy (1989) (0)
VULNERABILITY EFFECTS IN BULK-SOLIDS. VOLUME I. (1968) (0)
RECENT ADVANCES IN 111-V NITRIDE ELECTRON DEVICES (1996) (0)
Operating characteristics of high-power pulsed LSA oscillator diodes (1968) (0)
Session 24 Solid state devices — Permeable base transistors and ballistic devices (1980) (0)
IIB-4 high responsivity homojunction GaAs triangular barrier photodiode (1982) (0)
INVESTIGATION LINEAR BEAM AND NEW CONCEPTS OF MICROWAVE POWER. VOLUME I. GENERAL REPORT AND BASIC BEAM PHENOMENA. (1965) (0)
High average power pulsed GaAs LSA oscillators (1972) (0)
A TEM investigation of multiple quantum wells (1990) (0)
Suppressed Electron-Phonon Scattering in Superlattices (1993) (0)
Optimization of semiconductor lasers for UHF modulation (1996) (0)
High speed gallium arsenide transistors for logic applications (2008) (0)
FOCUSED THERMAL BEAM DIRECT PATTERNING ON INGAN DURING MOLECULAR BEAM EPITAXY (2007) (0)
ONR Contract : Report on GaN THz Device Research . Award N 00014-041-0002 (2009) (0)
Optimization of the optical guide design and cavity design of multiple quantum well lasers for efficient microwave optical links (1995) (0)
THE GROWTH OF UNIFORM SUBMICRON GALLIUM ARSENIDE LAYERS BY LIQUID PHASE EPITAXY (1976) (0)
MBE GROWTH AND CHARACTERIZATION OF Mg-DOPED III-NITRIDES ON SAPPHIRE (2009) (0)
RF AND DC CHARACTERIZATION OF P-CHANNEL A10.5Ga0.5As / GaAs MODFET'S WITH GATE LENGTH AS SMALL AS 0.25 pm (1989) (0)
Defense Technical Information Center Compilation Part Notice ADP 015079 TITLE : Dependence of Power and Efficiency of A 1 GaN / GaN HEMT ' s on the Load (0)
Effects of quantum-well design on the optical and microwave performance of strained-layer GaInAs/GaAs lasers (1992) (0)
IIIA-3 comparison of compositionally abrupt and graded emitter-base junctions in the heterojunction bipolar transistor (1986) (0)
N / AlN / GaNon-SiC Microwave HEMTs CNF Project # 370-89 Principal Investigator ( s ) : (2010) (0)
Microwave Semiconductor Research - Materials, Devices, Circuits. GaAs Ballistic Electron Transistors Using Buried Metal Gates. (1982) (0)
"Super-power microwave tubes" (1963) (0)
Precise frequency and phase control of high efficiency LSA oscillators (1971) (0)
The Use of Al(x)Ga(1-x)As Buffer Layers to Reduce Parasitic Space Charge Limited Current Flow through the Substrate in FET Structures, (1979) (0)
Design Considerations of a New 4H-SiC Enhancement-Mode Lateral Channel Vertical JFET for Low-Loss Switching Operation (2006) (0)
X-Band LSA(Limited Space charge Accumulation) Transmitter Sources. (1972) (0)
Measurement Of Electric Fields In GaN/AlGaN FETs Using Photoreflectance With Different Excitation Energies (2005) (0)
GaAs MBE Monolithic Low-Noise Amplifiers at X-Band (1985) (0)
Measuring Non-uniformities in GaN/AlN Quantum Wells (2003) (0)
THE CURRENT DISTRIBUTIONS IN A VELOCITY-MODULATED BRILLOUIN-FOCUSED ELECTRON BEAM (1962) (0)
Microwave Al x Ga 1−x N/GaN Power HEMT's (2000) (0)
High-power beam-plasma amplifier (1963) (0)
Effect Trans i s t or s t-Channel GaN/AlGaN terostructure Field (1996) (0)
Self-Aligned-Gate Digital AlGaAs/GaAs Modulation-Doped Field Effect Transistor (MODFET) Processing And Short Channel Effects (1987) (0)
Pyroelectric A1GaN/GaN HEMTs for ion-, gas- and Polar-Liquid Sensors (2004) (0)
Surface-Oriented Transferred-Electron Devices (1978) (0)
Compound Semiconductor Materials, Devices and Circuits (1988) (0)
Time-resolved photoluminescence spectroscopy of GaAs quantum well tunneling structures (1990) (0)
Measurements of the Fermi level mobility of the GaInP/InGaAs/GaAs wide and narrow channel MODFETs (1997) (0)
High current density/high voltage AlGaN/GaN HFETs on sapphire (2009) (0)
Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer (2007) (0)
High-Field Transport in Nitride Channels: a Hot-Phonon Bottleneck (2006) (0)
AlGaN/GaN HFET’S (2001) (0)
New frequency and average power scaling results for high pulse power LSA devices (1968) (0)
On the suppression of phonon-electron scattering in short periodic AlAs/GaAs multiple quantum well structures (1993) (0)
Investigation of Advanced Technology and High Field Electronic Properties of InP for Microwave Devices. (1979) (0)
Efficient pulsed LSA operations of thick epitaxial GaAs (1969) (0)
Improvement of conductivity and breakdown characteristics of AlGaN/GaN HEMT structures in passivation experiments (2002) (0)
Effect of InAlAs emitter on the microwave performance of InAlAs/InGaAs abrupt npn heterojunction bipolar transistor (1990) (0)
Polaronic signatures inintersubband transitions of strongly polarsemiconductor heterostructures (2005) (0)
Structures for High Frequency Transistor (1989) (0)
HIGH ELECTRON VELOCITY FOR HIGH FREQUENCY TRANSISTORS (1982) (0)
Investigation of hot‐electron injection and ballistic transport using ultrathin planar doped barrier launchers in vertical field effect spectrometer structures (1992) (0)
Electric current controlled liquid phase epitaxy of compound semiconductors for microwave devices (1979) (0)
Operating characteristics of high power, pulsed LSA oscillator diodes (1967) (0)
Dependence of electrical characteristics of MBE Ga0.47In0.53As planar doped barriers on InP substrates (1984) (0)
Microwave Semiconductor Research - Materials, Devices, Circuits. (1987) (0)
Influence of surface structure on electrical characteristics in SiC MESFETs (2003) (0)
Reduction of Be diffusion in GaAs by migration enhanced epitaxy, and the effect of heat treatment on the electrical activation and mobility (1989) (0)
Asymmetrical current conduction across a 50 Å thick aluminium gallium nitride polarisation barrier (2006) (0)
Initial Study of Ballistic Effects for the Operation of GaAs FET Devices (1980) (0)
Defense Technical Information Center Compilation Part Notice ADP 015074 (0)
Cathodoluminescence study of nitride transistor structures characterisation of native oxide (2000) (0)
INTERMIXING OF ION-IMLANTED AlGaAs/GaAs SUPERLATTICES (1985) (0)
AlGaN / GaNon-Diamond HEMT Recent Progress CNF Project # 370-89 Principal Investigator ( s ) : (2009) (0)
Comparative Analysis of Small Signal and Large Signal parameters in Heterostructure Field Effect Transistors (2019) (0)
Study of Ultra Short HFET Devices with InP Substrates (1992) (0)
Iii-nitrides by molecular beam epitaxy for longer and shorter wavelengths (2004) (0)
32. Electron Transport Within III-V Nitride Semiconductors (2017) (0)
U.S. France Workshop on GaAs Microstructures and High Performance Devices Held at Boston, Massachusetts on 8-10 June 1981. (1982) (0)
Avalanche-diode microwave noise generation experiments (1968) (0)
Polaronic signatures in intersubband transitions of strongly polar semiconductor heterostructures (2005) (0)
Double-heterostructure Ga_0.47In_0.53As integrated photoreceiver (1981) (0)
Self-aligned resonant tunneling-diode finger structure for high cut-off frequency and device integration (1990) (0)
THlB-1 Intrinsic Noise Characteristics of AlGaN/GaN HEMTs (2002) (0)
III-V Nitride Materials and Electron Devices (2005) (0)
Vertical-cavity surface-emitting lasers for flip-chip packaged vertical optical interconnects (1994) (0)
Electron Transport Within the III-V Nitride Semiconductors, GaN, AIN, and InA: A Monte Carlo Analysis (2007) (0)
High Speed Microwave and Optoelectronic Devices (1993) (0)
High Power X and Ku Band GaAs Sources. (1970) (0)
Proposed TeraHertz transistor using a compliant universal substrate (1997) (0)
Planar Doped Barrier Transistor. (1981) (0)
Electrical Instability Suppression in 4H-SiC Power MESFETs (2002) (0)
WA-B8 Double-heterostructure Ga0.47In0.53As MESFET's (1980) (0)
Influence of Small Doses of Gamma Irradiation on Transport and Noise Properties of SiC MESFETs (2005) (0)
Long Wavelength λc = 18μm Infrared Hot Electron Transistor (1994) (0)
Summary Abstract: The use of molecular beam epitaxy for special structures in high speed devices (1985) (0)
Solid State Microwave Devices (Rump Session) (1976) (0)
Generation of High Power Microwave Pulses using Gallium Arsenide (1969) (0)
High Frequency Optical Receivers. (1995) (0)
THE LIQUID PHASE EPITAXIAL GROWTH OF HIGH PURITY GA1-XALXAS (GALLIUM ALUMINUM ARSENIDE) (1980) (0)
Rectification at nGaAs - n Ga.7Al.3As Heterojunctions Grown by L.P.E., (1979) (0)
Ballistic electrons in compound semiconductors (1986) (0)
VB-7 the modulation doped GaInAs/AlInAs MESFET (1982) (0)
(Invited) High Electron Velocity for High Frequency Transistors (1983) (0)
The operation of kilowatt LSA oscillators (1970) (0)
Microwave Semiconductor Research - Materials, Devices and Circuits and Gallium Arsenide Ballistic Electron Transistors. (1985) (0)
Carrier Beconfinement Limited Velocity in Pseudomorphic AlGa Aslln Cia As Modula tion- Doped Field Effect Transistors (1987) (0)
Graded InGaAs/GaAs strained-layer single quantum well laser (1993) (0)
Microwave Performance Of Single-gate And Dual-gate Modfets Using Double Hetero'unction Modulation-doped Structures (1987) (0)
Important Role of Parasitic Regions in Electrical Characteristics of SiC MESFETs (2005) (0)
Semiconductor laser joint study program with Rome Laboratory (1994) (0)
A study of alloyed AuGeNi/Ag/Au based ohmic contacts on the Al0.48In0.52As/Ga0.47In0.53As system (1986) (0)
Variation of high-frequency laser parameters with well number in strained-layer QW lasers (1992) (0)
MP-A3 switching speed limits of GaAs devices for integrated circuits (1978) (0)
THz optical Hall-effect and MIR-VUV ellipsometry characterization of 2DEG properties in HfO$_{2}$ passivated AlGaN/GaN HEMT structures (2011) (0)
Low temperature growth and characterization of silicon delta doped GaInP/GaInAs/GaAs pseudomorphic heterostructures for use in high electron mobility transistors (1998) (0)
Comparison of threshold current and microwave modulation of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs single quantum well lasers (1990) (0)
Overview of advanced compound semiconductor microwave transistors (1991) (0)
VIB-3 permeable base transistor - A new technology (1982) (0)
Composition Analysis Using Elastic Recoil Detection (1999) (0)
Advanced Technology for Improved Quantum Device Properties Using Highly Strained Materials (1989) (0)
Frequency and breakdown properties of AlGaN/GaN HEMTs (2003) (0)
A theoretical investigation for the effects of spectral hole burning, hot carrier, hot phonon, and carrier diffusion-capture-escape on the limitations of the modulation bandwidth in high-speed quantum well lasers (1995) (0)
Three decades of our graduate research and education in compound semiconductor materials and devices (2002) (0)
Si Doping of High-Al-Mole Fraction AlxGa 1-xN Alloys with rf Plasma-Induced Molecular-Beam-Epitaxy Jeonghyun (2017) (0)
Extremely High Frequency Directly Modulated Lasers. (1997) (0)
Kink Effect in Submicrometer-Gate MBE-Grown InAlAs/InGaAs/InAlAs Heteroj unction (1988) (0)
Degradation of resonant frequency in high-speed quantum well lasers: effects of spectral hole burning, hot carrier, hot phonon, and carrier diffusion-capture-escape (1995) (0)
Terahertz Diode Development (2009) (0)
Short-Cavity -Length Multiquantum-Well S trained-Lay er Lasers (1991) (0)
Contributors, Dec. 1978 (1978) (0)
Advanced Concepts of Microwave Generation and Control in Solids. (1973) (0)
Study of Graded Channels in MODFETs on InP Substrates. (1996) (0)
High-speed GaAs heterojunction phototransistor grown by molecular beam epitaxy (1983) (0)
Physical electronics of cooled operation of very short compound semiconductor trasnsistors (1984) (0)
Influence of the n-diffusion layer on the channel current and the breakdown voltage in 4H-SiC SIT (2004) (0)
A Study of Ga(0.47)In(0.53)As/Al(0.48)In(0.52)As for Very High Frequency Device Applications (1988) (0)
C and X-Band LSA Transmitter Source. (1971) (0)
Investigation of Molecular Beam Epitaxial Growth of Compound Semiconductors and Contacts for Microwave Devices. (1982) (0)
Time-resolved studies ef tunneling in single and double quantum well structures (1989) (0)
High temperature operation of narrow channel AlInAs/InGaAs/AlInAs 3D-SMODFETs for power amplifiers (1997) (0)
Correlation between hot exciton luminescence and Kelvin probe force microscopy in p-type GaN (2000) (0)
Advanced solid state microwave techniques (1975) (0)
Ultimate Performance Capabilities of Microwave Semiconductor Devices. (1975) (0)
A Study of Ga(.47)In(.53)As and Al(.48)In(.52)As for Very High Frequency Device Applications. (1985) (0)
Quantitative compositional mapping of InxGa1-XAs/GaAs quantum wells by annular dark field imaging (1995) (0)
THEORETICAL AND EXPERIMENTAL INVESTIGATION OF LINEAR-BEAM MICROWAVE TUBES (1962) (0)

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What Schools Are Affiliated With Lester F. Eastman?

Lester F. Eastman is affiliated with the following schools:

Cornell University