Lothar Ley

Lothar Ley's AcademicInfluence.com Rankings

Lothar Ley

Computer Science

#4454

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#4696

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Computational Linguistics

#429

World Rank

#436

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Machine Learning

#875

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#887

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Artificial Intelligence

#1082

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#1101

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Computer Science

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Lothar Ley's Published Works

Number of citations in a given year to any of this author's works

Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author

Published Works

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. (2009) (2284)
The one phonon Raman spectrum in microcrystalline silicon (1981) (1989)
Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study (2008) (738)
Photoemission in Solids I (1978) (693)
Total valence-band densities of states of III-V and II-VI compounds from x-ray photoemission spectroscopy. [GaSb; InSb] (1974) (542)
Infrared Spectrum and Structure of Hydrogenated Amorphous Silicon (1980) (448)
Functionalization of single-walled carbon nanotubes with (R-)oxycarbonyl nitrenes. (2003) (421)
X-ray photoemission studies of diamond, graphite, and glassy carbon valence bands (1974) (403)
Electron Affinity of the Bare and Hydrogen Covered Single Crystal Diamond (111) Surface (1998) (360)
Electron affinity of plasma-hydrogenated and chemically oxidized diamond (100) surfaces (2001) (347)
Electronic structure of hydrogenated and unhydrogenated amorphous Si N x ( 0 ≤ x ≤ 1 . 6 ) : A photoemission study (1984) (330)
Origin of the D peak in the Raman spectrum of microcrystalline graphite (1998) (326)
Raman spectra of epitaxial graphene on SiC(0001) (2008) (302)
Effect of SOCl2 treatment on electrical and mechanical properties of single-wall carbon nanotube networks. (2005) (301)
Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy (2008) (299)
A comparative analysis of a-C:H by infrared spectroscopy and mass selected thermal effusion (1998) (291)
Surface transfer doping of diamond (2004) (262)
X-Ray Photoemission Spectra of Crystalline and Amorphous Si and Ge Valence Bands (1972) (259)
The hydrogen content of a-Ge:H and a-Si:H as determined by IR spectroscopy, gas evolution and nuclear reaction techniques (1980) (248)
The electronic structure of SrTiO3 and some simple related oxides (MgO, Al2O3, SrO, TiO2) (1977) (207)
Noncontact temperature measurements of diamond by Raman scattering spectroscopy (1998) (171)
Epitaxial graphene: a new material (2008) (168)
L 2 , 3 M 45 M 45 Auger Spectra of Metallic Copper and Zinc: Theory and Experiment (1973) (168)
Structural and electronic properties of graphite layers grown on SiC(0001). (2006) (163)
X-Ray Photoemission from Zinc: Evidence for Extra-Atomic Relaxation via Semilocalized Excitons (1973) (162)
Relative effect of extra-atomic relaxation on Auger and binding-energy shifts in transition metals and salts (1974) (159)
Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfaces (1997) (152)
Doping of single-walled carbon nanotube bundles by Brønsted acids (2003) (151)
Core-electron binding energies of the first thirty elements (1977) (144)
Photoelectron Spectra of Hydrogenated Amorphous Silicon (1977) (143)
Low-threshold electron emission from diamond (1999) (131)
Low-temperature growth and field emission of ZnO nanowire arrays (2005) (123)
Nucleophilic-alkylation-reoxidation: a functionalization sequence for single-wall carbon nanotubes. (2006) (122)
Nanometer‐scale field‐induced oxidation of Si(111):H by a conducting‐probe scanning force microscope: Doping dependence and kinetics (1995) (112)
THE EVOLUTION OF CORE STATES FROM ENERGY BANDS IN THE 4d5s5p REGION FROM Pd TO Xe (1972) (106)
Raman scattering in polycrystalline 3 C − SiC : Influence of stacking faults (1998) (106)
[2+1] cycloaddition for cross-linking SWCNTs (2004) (102)
EVIDENCE FOR COVALENT BONDING IN CRYSTALLINE AND AMORPHOUS As, Sb, AND Bi FROM VALENCE BAND PHOTOELECTRON SPECTRA (1973) (100)
X-Ray Photoemission Cross-Section Modulation in Diamond, Silicon, Germanium, Methane, Silane, and Germane (1973) (100)
Al2O3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001) (2003) (100)
Schottky barrier between 6H-SiC and graphite: Implications for metal/SiC contact formation (2006) (98)
Many-body effects in x-ray photoemission from magnesium (1975) (97)
HIGH-RESOLUTION SURFACE-SENSITIVE C 1S CORE-LEVEL SPECTRA OF CLEAN AND HYDROGEN-TERMINATED DIAMOND (100) AND (111) SURFACES (1998) (96)
X-Ray Photoemission from Sodium and Lithium (1973) (92)
Multiplet splitting of the manganese 2p and 3p levels in MnF/sub 2/ single crystals (1975) (92)
Static Charge Fluctuations in Amorphous Silicon (1982) (88)
New Multiplet Structure in Photemission from Mn F 2 (1973) (88)
Fermi level on hydrogen terminated diamond surfaces (2003) (88)
Analysis of surface- and bulk-plasmon contributions to x-ray photoemission spectra (1975) (87)
Bonding of fluorine in amorphous hydrogenated silicon (1980) (85)
Photoemission studies on in situ prepared hydrogenated amorphous silicon films (1979) (84)
Calculating the Universal Energy‐Level Alignment of Organic Molecules on Metal Oxides (2013) (83)
Defect Spectroscopy and Determination of the Electron Diffusion Length in Single Crystal Diamond by Total Photoelectron Yield spectroscopy (1997) (83)
High-Resolution X-Ray-Photoemission Spectra of PbS, PbSe, and PbTe Valence Bands (1973) (82)
Electronic and chemical passivation of hexagonal 6H–SiC surfaces by hydrogen termination (2001) (82)
Surface band bending and surface conductivity of hydrogenated diamond (2003) (82)
Characteristic energy loss structure of solids from x-ray photoemission spectra (1974) (81)
Dispersions of surface states on diamond (100) and (111) (1997) (79)
Photoemission and optical properties (1984) (78)
Diamond surface conductivity experiments and photoelectron spectroscopy (2001) (76)
X-ray photoemission spectra of the 4d levels in rare-earth metals (1974) (76)
Quantitative evaluation of biaxial strain in epitaxial 3C-SiC layers on Si(100) substrates by Raman spectroscopy (2002) (75)
Partial densities of states in amorphous Pd 0.81 Si 0.19 (1979) (75)
X-Ray Photoemission Valence-Band Spectra and Theoretical Valence-Band Densities of States for Ge, GaAs, and ZnSe (1972) (75)
Angle-resolved uv photoemission and electronic band structures of the lead chalcogenides (1978) (75)
Recovery of surface conductivity of H-terminated diamond after thermal annealing in vacuum (2004) (71)
Effective correlation energies for defects in a-C:H from a comparison of photelectron yield and electron spin resonance experiments (1995) (71)
X-ray photoemission studies of the alkali halides (1974) (71)
Angular-resolved uv photoemission and the band structure of GeS (1977) (70)
Alternative techniques to reduce interface traps in n‐type 4H‐SiC MOS capacitors (2008) (66)
DEHYDROGENATION AND THE SURFACE PHASE TRANSITION ON DIAMOND (111) : KINETICS AND ELECTRONIC STRUCTURE (1999) (65)
Role of hydrogen on field emission from chemical vapor deposited diamond and nanocrystalline diamond powder (2000) (65)
Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy (2006) (65)
Optical properties and transport in microcrystalline silicon prepared at temperatures below 400 °C (1981) (65)
Electrochemical Surface Transfer Doping The Mechanism Behind the Surface Conductivity of Hydrogen-Terminated Diamond (2004) (64)
Carrier recombination times in amorphous-silicon doping superlattices (1984) (63)
Photoelectron spectra of fluorinated amorphous silicon (a-Si: F) (1981) (60)
Relaxation and final-state structure in XPS of atoms, molecules, and metals (1975) (60)
Work function and electron affinity of the fluorine-terminated (100) diamond surface (2013) (59)
Evidence for a localized magnetic moment in paramagnetic α-Mn from multiplet splitting (1974) (59)
Valence-band structures of phosphorus allotropes (1983) (57)
Surface transfer doping of hydrogen-terminated diamond by C60F48: energy level scheme and doping efficiency. (2012) (55)
Diamond nucleation under bias conditions (1998) (54)
The impact of ozone on the surface conductivity of single crystal diamond (2004) (52)
Influence of substrate bias on the properties of a-C:H films prepared by plasma CVD (1993) (52)
Surface transfer doping of diamond by fullerene (2005) (52)
Molecular and electronic structure of PTCDA on bilayer graphene on SiC(0001) studied with scanning tunneling microscopy (2008) (52)
Hydrogen termination and electron emission from CVD diamond surfaces: a combined secondary electron emission, photoelectron emission microscopy, photoelectron yield, and field emission study (2000) (52)
X-RAY PHOTOEMISSION SPECTRA OF THE VALENCE BANDS OF THE 3d TRANSITION METALS, Sc TO Fe (1977) (51)
The magnetic moment of iron in GdFe intermetallic compounds (1979) (51)
Formation of pin holes in hydrogenated amorphous silicon at high temperatures and the yield strength of a‐Si:H. (1981) (51)
Diamond Surfaces with Air‐Stable Negative Electron Affinity and Giant Electron Yield Enhancement (2013) (50)
Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide (2010) (46)
First results from a second generation toroidal electron spectrometer. (2005) (46)
Growth of diamond on silicon during the bias pretreatment in chemical vapor deposition of polycrystalline diamond films (1996) (46)
Surface Electronic Properties of Diamond (2000) (46)
Infrared spectroscopy of amorphous hydrogenated GaAs: Evidence for H bridges (1982) (45)
Quantitative determination of oxidative defects on single walled carbon nanotubes (2006) (44)
Electronic states of an ordered oxide on C-terminated 6H–SiC (1999) (43)
Synchrotron x-ray photoelectron spectroscopy study of hydrogen-terminated 6H-SiC{0001} surfaces (2003) (43)
An ionicity scale based on x‐ray photoemission valence‐band spectra of ANB8−N and ANB10−N type crystals (1974) (42)
Valence Band Structure of PbS from Angle-Resolved Photoemission (1977) (41)
Atomic layer deposited aluminum oxide films on graphite and graphene studied by XPS and AFM (2010) (41)
Multiplet splittings of the 4s and 5s core levels in the rare earth metals (1974) (40)
Strong and Tunable Spin-Orbit Coupling in a Two-Dimensional Hole Gas in Ionic-Liquid Gated Diamond Devices. (2016) (40)
Surface vibrations on clean, deuterated, and hydrogenated single crystal diamond(100) surfaces studied by high-resolution electron energy loss spectroscopy (2002) (39)
Quasi-Freestanding Graphene on SiC(0001) (2010) (38)
Surface Fermi level position of hydrogen passivated Si(111) surfaces (1996) (37)
The onset of relativistic effects in the density of states of the 6s6p elements Tl, Pb, and Bi (1972) (37)
The correlation between surface conductivity and adsorbate coverage on diamond as studied by infrared spectroscopy (2001) (36)
Spin-orbit interaction in a two-dimensional hole gas at the surface of hydrogenated diamond. (2015) (36)
Direct spectroscopic determination of the distribution of occupied gap states in a-Si:H (1983) (36)
Hydrothermal functionalisation of single-walled carbon nanotubes (2004) (36)
Extremely high negative electron affinity of diamond via magnesium adsorption (2015) (35)
Photoelectron spectroscopy of clean and hydrogen-exposed diamond (111) surfaces (1994) (35)
Diamond growth during bias pre-treatment in the microwave CVD of diamond (1996) (34)
Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts (2008) (34)
Hydrogen bonding analysis in amorphous hydrogenated carbon by a combination of infrared absorption and thermal effusion experiments (1996) (34)
Interface formation between hydrogen terminated Si(111) and amorphous hydrogenated carbon (a-C:H) (1997) (33)
X-ray photoemission study of Gd, Tb and Dy 4f and valence bands (1973) (33)
Initial stages in the formation of PtSi on Si(111) as followed by photoemission and spectroscopic ellipsometry (1995) (31)
Surface conductivity of the diamond: A novel transfer doping mechanism (2006) (31)
Influence of Stacking Disorder on the Raman Spectrum of 3C‐SiC (1999) (30)
A high-resolution X-ray photoemission study of the total valence-band densities of states of GaSe and BiI3☆ (1975) (30)
Identification of carbon interstitials in electron-irradiated 6H-SiC by use of a 13 C enriched specimen (2002) (30)
Field emission measurements with micrometre resolution on carbon nanostructures (1999) (29)
High sensitivity photoelectron yield spectroscopy with computer‐calculated electron optics (1993) (29)
The hydrogenated and bare diamond (110) surface: a combined LEED-, XPS-, and ARPES study (1999) (28)
Crystal-field effects on the apparent spin--orbit splitting of core and valence levels observed by x-ray photoemission (1974) (28)
Parity mixing in the 482 keV transition of 181Ta (1969) (28)
Electronic Structure of Polymeric Sulfur Nitride,(SN)x, from X-Ray-Photoelectron Spectroscopy (1975) (28)
Photoelectron yield spectroscopy on negative electron affinity diamond surfaces: A contactless unipolar transport experiment (1998) (28)
Tuning the charge carriers in epitaxial graphene on SiC(0001) from electron to hole via molecular doping with C60F48 (2013) (28)
Surface chemical shifts and photoelectron diffraction in CoSi2 (1988) (27)
An X-ray photoemission investigation of the density of states of β′ -NiAl☆ (1978) (27)
Electronic and atomic structure of the 6H-SiC(0001̄) surface studied by ARPES, LEED, and XPS (1998) (27)
High-resolution XPS spectra of Ir, Pt and Au valence bands (1972) (27)
Moving grating technique: A new method for the determination of electron and hole mobilities and their lifetime (1993) (27)
Self-consistent solution of the Schrodinger-Poisson equations for hydrogen-terminated diamond (2010) (27)
Deriving the kinetic parameters for Pt-silicide formation from temperature ramped in situ ellipsometric measurements (2000) (27)
Hydrogen terminated 4H-SiC(1100) and (1120) surfaces studied by synchrotron x-ray photoelectron spectroscopy (2005) (27)
The structural nature of amorphous Se and Te (1974) (27)
Silicon Carbide: Volume 2: Power Devices and Sensors (2009) (26)
Surface conductivity induced by fullerenes on diamond: Passivation and thermal stability (2006) (26)
Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond (2011) (26)
Surface doping: a special feature of diamond (2001) (25)
Temperature-dependent photoemission study of the HgTe--CdTe valence-band discontinuity (1989) (25)
The influence of diamond chemical vapour deposition coating parameters on the microstructure and properties of titanium substrates (1996) (25)
Influence of ambient humidity on the surface conductivity of hydrogenated diamond (2008) (24)
Formation of a silicon terminated (100) diamond surface (2015) (24)
PES and LEED study of hydrogen- and oxygen-terminated 6H-SiC(0 0 0 1) and (0 0 0 1) surfaces (2001) (24)
Photoemission studies of graphene on SiC : growth, interface, and electronic structure. (2008) (24)
MoO3 induces p-type surface conductivity by surface transfer doping in diamond (2020) (24)
Photoelectron emission from lithiated diamond (2014) (24)
Electronic properties of single crystalline diamond surfaces (1999) (24)
Surface conductivity of nitrogen-doped diamond (2002) (24)
Time resolved photoluminescence of amorphous hydrogenated carbon (1998) (24)
Valence and core level photoemission spectra of AlxGa1−xAs (1978) (23)
Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications (2009) (23)
Work function, band bending, and electron affinity in surface conducting (100) diamond (2011) (23)
Hydrogen-terminated diamond electrodes. I. Charges, potentials, and energies. (2008) (22)
Doping efficiency and energy-level scheme in C60F48-doped zinc–tetraphenylporphyrin films (2013) (22)
Investigation of mass transport during PVT growth of SiC by 13C labeling of source material (2003) (22)
Enhanced Multielectron Effects in the Core-Level Spectra of Calcium, Strontium, and Barium (1980) (22)
Geometry of the (2×1) reconstruction of diamond (111) (2002) (22)
Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions (2009) (22)
Nanometer‐scale modification of the tribological properties of Si(100) by scanning force microscope (1995) (21)
Phonon stop bands in amorphous superlattices (1987) (21)
Origin of the split Si–H stretch mode on hydrogen terminated 6H-SiC(0001): Titration of crystal truncation (2002) (21)
Electron affinity and band bending of single crystal diamond (111) surface (1999) (21)
The electronic band structure of indium selenide : photoemission and theory (1977) (21)
Surface electronic structure of calcium, strontium, and barium (1981) (20)
Surface-sensitive K-edge absorption spectroscopy on clean and hydrogen-terminated diamond (111) and (100) surfaces (1999) (20)
Attosecond-fast internal photoemission (2020) (20)
Hydrogenation of 6H-SiC as a surface passivation stable in air (2001) (20)
Charge transfer doping of silicon. (2014) (19)
Electronic density of states and deep defects of hydrogenated amorphous carbon (a-C:H) (1994) (19)
Band edges, fermi level position, and hydrogen concentration in surface near regions of a-Si:H (1983) (19)
Modification of single-walled carbon nanotubes by hydrothermal treatment (2003) (19)
Universal Work Function of Metal Oxides Exposed to Air (2019) (19)
Fourier transform infrared spectroscopy of CH vibrational modes on a diamond (111) surface (2000) (19)
Kinetics of field-induced oxidation of hydrogen-terminated Si(111) (1996) (18)
Growth of high-quality homoepitaxial diamond films by HF-CVD (2002) (18)
Diamond nucleation on silicon during bias treatment in chemical vapour deposition as analysed by electron microscopy (1997) (18)
Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties (2010) (18)
Characterization of defects in silicon carbide by Raman spectroscopy (2008) (18)
Correlation effects at idealSiC{0001}−(1×1)surfaces (2006) (17)
Random telegraphic noise in large area a-Si:H/a-Si1−xNx:H double barrier structures (1989) (17)
Photoemission Study of the Silicate Adlayer Reconstruction on Si-terminated 6H-SiC (0001) (2000) (17)
G-factor and well width variations for the two-dimensional hole gas in surface conducting diamond (2018) (17)
Electronic density of states and bonding in chalcopyrite-type semiconductors (1974) (17)
Hydrogen-terminated diamond electrodes. II. Redox activity. (2008) (16)
Structure of interfaces in a‐Si: H/a‐SiNx: H superlattices (1991) (16)
Surface transfer doping of diamond with a molecular heterojunction (2012) (16)
Temperature induced polytype conversion in cubic silicon carbide studied by Raman spectroscopy (2004) (16)
High quality textured growth of oriented diamond thin films on Si (100) in a hot filament-CVD system (1999) (16)
Growth of cubic SiC single crystals by the physical vapor transport technique (2007) (16)
Spectroscopic determination of the position of the ferm-level in doped amorphous hydrogenated silicon (1979) (16)
Thermal stability of surface and interface structure of atomic layer deposited Al2O3 on H-terminated silicon (2007) (16)
Photoemission in semiconductors (1979) (16)
The effect of spin-orbit splitting on the valence band density of states of lead (1975) (15)
Kinetics of platinum silicide formation followed in situ by spectroscopic ellipsometry (1999) (14)
Localized States at the Conduction-Band Edge of Amorphous Silicon Nitride Detected by Resonance Photoemission (1984) (14)
Electronic Structure of Graphite/6H-SiC Interfaces (2006) (14)
Initial stages in the growth of polycrystalline diamond on silicon (1993) (13)
Electronic properties of clean unreconstructed 6H-SiC(0001) surfaces studied by angle resolved photoelectron spectroscopy (2006) (13)
Isotope-disorder-induced line broadening of phonons in the Raman spectra of SiC. (2001) (13)
Fluorination of the diamond surface by photoinduced dissociation of C60F48 (2011) (13)
Photoemission spectra of hydrogenated and oxidized amorphous silicon (1982) (13)
Controlled hydroxylation of diamond for covalent attachment of fullerene molecules (2008) (13)
Interface of atomic layer deposited Al2O3 on H‐terminated silicon (2006) (13)
X-RAY PHOTOELECTRON SPECTROSCOPIC STUDIES OF THE ELECTRONIC STRUCTURE OF TRANSITION METAL DIFLUORIDES (1977) (13)
Characterization of superlattices based on amorphous silicon (1987) (13)
Band diagrams of intrinsic and p‐type diamond with hydrogenated surfaces (2003) (13)
High resolution core level spectroscopy of hydrogen-terminated (1 0 0) diamond (2016) (12)
Electronic structure and defect density of states of hydrogenated amorphous carbon (a-C:H) as determined by photoelectron and photoelectron yield spectroscopy (1993) (12)
Carbon nanostructures — Diamond nucleation centers formed during the bias pretreatment (1998) (12)
Persistent photoconductivity in doping-modulated amorphous silicon superlattices (1985) (12)
Transport properties of a − Si 1 − x C x : H films investigated by the moving photocarrier grating technique (2000) (12)
Wet-Chemical Preparation of Silicate Adlayer Reconstructed SiC(0001) Surfaces as Studied by PES and LEED (2002) (11)
Ozone-Mediated Polymerization of Fullerene and Fluorofullerene Thin Films (2010) (11)
Growth of high quality, large grain size, highly oriented diamond on Si (100) (1999) (11)
Electronic structure of a-Si:H and its interfaces as determined by photoelectron spectroscopy (1989) (11)
Infrared spectroscopy of C–D vibrational modes on diamond (100) surfaces (1999) (10)
Near‐surface dopant passivation after wet‐chemical preparation (1996) (10)
Electronic and structural properties of the interface between c-Si(111) and diamond-like carbon (1997) (10)
A High-Resolution Photoemission Study of Hydrogen-Terminated 6H-SiC Surfaces (2002) (10)
Electronic structure of PbI2 from photoelectron spectra and the exciton problem (1977) (10)
Nanometer‐scale modification of tribomechanical properties of Si(111):H surfaces performed and investigated by a conducting‐probe scanning force microscope (1996) (10)
Near-Surface Electronic Properties of a-Si:H (1989) (10)
Electronic structure and superconductivity of Co-substituted YBa2Cu3O7−δ (1988) (9)
Photoelectron spectra of V3Si, a high Tc superconductor with a 15 structure (1976) (9)
Preparation and Characterization of Hydrogen Terminated 6H-SiC (2001) (9)
Functionalization of single‐walled carbon nanotubes by aromatic molecules studied by scanning tunneling microscopy (2006) (9)
Growth of 3C-SiC Bulk Material by the Modified Lely Method (2004) (9)
Spectroscopic investigations of diamond/hydrogen/metal and diamond/metal interfaces (2001) (9)
Formation of the interface between c-Si(111) and diamond-like carbon studied with photoelectron spectroscopy (1998) (9)
Surface Conductivity of Diamond as a Function of Nitrogen Doping (2001) (9)
Preparation of low index single crystal diamond surfaces for surface science studies (2011) (9)
Strong spin-orbit interaction induced by transition metal oxides at the surface of hydrogen-terminated diamond (2020) (9)
Photoelectron emission characteristics of diamond near the band gap (2000) (8)
Lifetime measurements of excited states in 219Rn by observation of conversion-electron doppler shifts following α-decay (1974) (8)
Charge-induced distortion and stabilization of surface transfer doped porphyrin films. (2013) (8)
The influence of surface treatment on the electronic structure of CVD diamond films (1994) (8)
Study of space-charge-limited currents in high-voltage TFTs based on a-Si:H (2001) (8)
Study of the Temperature Induced Polytype Conversion in Cubic CVD SiC by Raman Spectroscopy (2004) (8)
On the decapping of As4-capped GaAs(111) surfaces: An angle-resolved core-level photoemission study (1993) (7)
Temperature effects on valence bands in semiconducting lead chalcogenides (1979) (7)
g -factor and well-width fluctuations as a function of carrier density in the two-dimensional hole accumulation layer of transfer-doped diamond (2019) (7)
Valence-band structure and critical point energies of diamond along [100] (2013) (7)
GaAs surface states observed by x‐ray photoemission (1979) (7)
Surface and bulk properties of GaAs(001) treated by selenium layers (2000) (7)
GROWTH OF PLASMA-TRANSPORT MICROCRYSTALLINE SILICON AS STUDIED BY IN-SITU RAMAN SPECTROSCOPY (1982) (7)
Photoemission spectroscopy of amorphous hydrogenated germanium (1980) (7)
In situ characterization of chemical annealing of a-Si:H by photoelectron spectroscopy (1993) (7)
Spectroscopic investigations of the decay 223Ra → 219Rn (1974) (7)
Band structure of InGaAs (1989) (7)
Photoemission study of hydrogenated and unhydrogenated amorphous SiNx 0 ⩽ x ⩽ 2) (1983) (7)
Electronic and Atomic Structure of an Ordered Silicate Adlayer on Hexagonal SiC (2000) (6)
Initial Stages of Thermal Oxidation of 4H-SiC (11-20) Studied by Photoelectron Spectroscopy (2004) (6)
MBE growth of MgSe thin films on ZnSe/GaAs(001) substrates (2001) (6)
Angular dependence of the magnetic linear dichroism in Fe 3p photoemission (1995) (6)
High Resolution Photoemission Study of the 6H-SiC/SiO2 Interface (1997) (6)
Atmospheric pressure graphitization of SiC(0001)- A route towards wafer-size graphene layers (2008) (6)
Electronic structure of amorphous and microscrystalline a-GaAs(:H) (1983) (6)
Surface Conductivity of Diamond (2009) (6)
Defects and disorder broadened band tails in compensated hydrogenated amorphous silicon (1991) (6)
Experimental evidence for phonon folding in compositional amorphous superlattices (1985) (6)
Investigation of Mass Transport during SiC PVT Growth Using Digital X-Ray Imaging, 13C Labeling of Source Material and Numerical Modeling (2003) (6)
Stacking rearrangement at 6H-SiC(0 0 0 1) surfaces during thermal hydrogenation (2003) (6)
Mapping the Fermi surface of Cu using ARUPS (1995) (5)
Summary Abstract: Surface states at the (110) surface of InAs and InSb and the growth of AlAs at submonolayer coverage of Al studied by angle‐resolved photoelectron spectroscopy (1986) (5)
Angle resolved photoemission and the band structure of 6H-SiC (1997) (5)
Angular resolved photoemission and the band structure of solids (1979) (5)
Electron-hole interaction in the d -electron excitations of GeS and SnS (1977) (5)
The Density of States in Undoped and Doped Amorphous Silicon-Germanium Alloys Determined through Photoyield Spectroscopy (1989) (5)
Maieret al.Reply (2001) (5)
Reply: Maier et al. (2001) (5)
Ultrashort laser-pulse annealing of hydrogenated amorphous silicon (1981) (5)
Ti-silicide formation during isochronal annealing followed by in situ ellipsometry (2000) (5)
Surface chemistry of 6H-SiC(000) after reactive ion etching (1997) (5)
Engineering the spin–orbit interaction in surface conducting diamond with a solid-state gate dielectric (2020) (5)
Influence of space charges on the resonant photoconductor employing a moving laser induced grating (1996) (5)
Field enhanced conductivity in a-Si:H thin film transistors (1993) (5)
Transport properties of amorphous hydrogenated silicon–carbon alloys (2000) (5)
Electronic and Structural Characterization of the Near Surface Layer and the Bulk in νc-Si:H Prepared with Hydrogen dilution (1989) (5)
Carrier mobility and lifetime in a-Si:H determined by the moving grating technique (1993) (5)
Density of gap states in a-Si:H determined by spectrally resolved low temperature IR-photoconductivity (1987) (4)
Photomodulation of the photoelectric yield from a-Si:H (1987) (4)
Contactless Measurement of the Thermal Conductivity of Thin SiC Layers (1997) (4)
Identification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H SiC by Photoluminescence Spectroscopy (2003) (4)
Ordered arrangement of 9-aminoanthracene on Au(111) surfaces: A scanning tunneling microscopy study (2007) (4)
The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiC (2004) (4)
Electronic and structural properties of the a-Si:H/a-SiNX:H interface☆ (1993) (4)
Development of a silicon–diamond interface on (111) diamond (2020) (4)
Isotope Effects on the Raman Spectrum of SiC (2000) (4)
Electromagnetic transition rates in 215Po (1974) (4)
Photoemission studies of ZnSe epilayers grown on GaAs(111)B surface (2001) (4)
Phonons in amorphous superlattices (1989) (4)
Structural and Electronic Properties of the 6H-SiC(0001)/Al2O3 Interface Prepared by Atomic Layer Deposition (2004) (4)
ALD Deposited Al2 O3 Films on 6H-SiC(0001) after Annealing in Hydrogen Atmosphere (2005) (4)
Individual electronic defect states in a-Si:H/a-SiNx:H double barrier structures (1991) (4)
How successfully does angle-resolved photoemission determine the band structure of semiconductors? (1993) (4)
Direct observation of phonon emission from hot electrons: spectral features in diamond secondary electron emission (2014) (4)
Photoelectron holography of GaAs(001) (1995) (4)
The surface valence band structure of the two phases of ZnSe(100) (1998) (4)
Modification of Electrical and Mechanical Properties of Single Wall Carbon Nanotubes by Reaction with SOCl 2 (2003) (3)
Infrared spectroscopy of amorphous hydrogenated GaAs, GaP, GaSb: Evidence for GaHGa bridges (1983) (3)
Implication of hydrogen-induced boron passivation in wet-chemically cleaned Si(111):H (1997) (3)
Erratum: “Origin of the split Si–H stretch mode on hydrogen terminated 6H-SiC(0001): Titration of crystal truncation” [Appl. Phys. Lett. 80, 4726 (2002)] (2002) (3)
Full Hemisphere Fermi Surface Mapping Using A Novel Toroidal Electron Spectrometer (2010) (3)
An optical heterodyne experiment for sensitive detection of laser induced photocarrier gratings in semiconductors (1996) (3)
How the solid state matrix affects the chemical shift of core-level binding energies: A novel method to take the induction effect into account (2006) (3)
Light-induced transient changes of the occupied density of defect states of a-Si:H (1993) (3)
Angle-resolved photoemission from a GaAs (1¯ 1¯ 1¯)-2×2 surface: Off-normal emission study (1993) (3)
Electronic Raman Studies of Shallow Donors in Silicon Carbide (2006) (3)
Resonant Photoemission Study of Cd_{1-x}Fe_{x}Se Valence Band (1991) (3)
Spin-orbit splitting in the valence bands of PbSe from angle-resolved uv photoemission (1977) (3)
Surface states and the intrinsic valence band tail in a-Si:H (1987) (3)
The valence band structure of the ZnSe{001}-(2 × 1) surface as determined by angle-resolved photoemission spectroscopy (1997) (3)
Investigations of Amorphous Silicon with Synchrotron Radiation (1985) (3)
Photoemission study of near-surface band gap states in a-Si:H (1988) (3)
Power devices and sensors (2010) (3)
Electronic and Atomic Structure of the C-Terminated 6H-SiC Surface (1997) (3)
Comment on ‘‘X‐ray photoemission core level determination of the GaSb/AlSb heterojunction valence‐band discontinuity’’[Appl. Phys. Lett. 49, 1037 (1986)] (1987) (3)
The formation and stability of sub-micron clusters in silane and argon plasmas (1991) (3)
Angular resolved photoemission from PbS (100) for 16.85 eV and 21.22 eV excitation energy (1977) (3)
Band Tails and Thermal Disorder in Doped and Undoped Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys (1990) (3)
Cross‐sectional scanning tunneling and scanning force microscopy of amorphous hydrogenated silicon pn‐doping superlattices in nitrogen and in air (1994) (2)
Field emission characterization of carbon nanostructures for cold cathode applications (1998) (2)
Observation of Random Telegraphic Noise in Large Area a-Si:H/a- Si1−x, Nx:H Double Barrier Structures (1989) (2)
Analysis of the moving photocarrier grating technique for semiconductors of high defect density (2001) (2)
Correlation between electronic micro-roughness and surface topography in two-dimensional surface conducting hydrogen-terminated diamond (2021) (2)
Angle‐resolved photoemission and band structure of the alloy Al0.5Ga0.5As compared to that of the superlattice [(AlAs)2/(GaAs)2]10 (1993) (2)
Energy distribution and thermal broadening of band tail states in doped and undoped hydrogenated amorphous silicon (1989) (2)
Spatial charge fluctuations in amorphous silicon (1983) (2)
Epitaxial growth and the electronic structure of MgSe on ZnSe/GaAs (001) (2001) (2)
Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy (2008) (2)
High field transport in the inversion layer of amorphous silicon thin film transistors (1996) (2)
Energy level alignment at the porphyrin/cobaltocene interface: From transfer doping to cobalt intercalation (2014) (2)
Simple micrometer driven coarse motion stage with lateral kinematic mount for scanning probe microscopy (1993) (2)
8. Alternative Techniques to Reduce Interface Traps in n-Type 4H-SiC MOS Capacitors (2011) (2)
The Fermi surface dimensions of disordered Cu3Au as determined by angle resolved photoemission spectroscopy (1998) (2)
Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100) (2005) (2)
Covalent Functionalization of Arc Discharge, Laser Ablation and HiPCO Single‐Walled Carbon Nanotubes (2003) (1)
THE RELATIVE EFFECT OF EXTRA-ATOMIC RELAXATION ON AUGER AND ESCA SHIFTS IN TRANSITION METALS AND SALTS (1973) (1)
The Purification of Single‐Walled Carbon Nanotubes studied by X‐ray induced Photoelectron Spectroscopy (2003) (1)
Characterization of oxidized SWCNTs by XPS (2002) (1)
Carrier Recombination in Doping Superlattices of a-Si:H (1985) (1)
Zone-folded Acoustic Phonons in Amorphous Superlattices (1989) (1)
Publisher's Note: Correlation effects at ideal SiC{0001}-(1×1) surfaces [Phys. Rev. B 73, 075412 (2006)] (2006) (1)
Chapter 12 Photoelectron Emission Studies (1984) (1)
Effect of strain on the band structure of InGaAs (1990) (1)
Raman Spectroscopy on Biaxially Strained Epitaxial Layers of 3C-SiC on Si (2000) (1)
Fuctionalization of Single‐Walled Carbon Nanotubes with Organo‐Lithium Compounds: A Combined XPS, STM, and AFM study (2005) (1)
Photoemission in SiOx alloys (1987) (1)
Surface and bulk properties of GaAs [001] treated by Mg layers (2000) (1)
Fermi Surface of Disordered Cu3Au as Determined by Angle-resolved Photoemission (1996) (1)
Moving Photocarrier Grating Technique for Mobility and Lifetime Measurements in Amorphous Semiconductors (1994) (1)
Kinetics of Pt Silicide Formation Studied by Spectral Ellipsometry (1997) (1)
Magnetic properties of amorphous and liquid PdSi alloys (1977) (1)
Ionicity scale based on x-ray photoemission valence-band spectra of A/sup N/B/sup 8-N/ and A/sup N/B/sup 10-N/ type crystals (1974) (1)
Facile Solubilization Of Single Walled Carbon Nanotubes Using A Urea Melt Process (2005) (1)
Purification of Single‐Walled Carbon Nanotubes Studied by STM and STS (2003) (1)
PHOTOEMISSION STUDIES OF THE TRANSITION FROM AMORPHOUS TO MICROCRYSTALLINE SILICON (1981) (1)
The localized nature of screening in covalently bonded amorphous semiconductors (1994) (1)
Growth, defects, and novel applications (2010) (1)
SURFACE PROPERTIES OF a-Si : H AND a-Si : F INVESTIGATED BY PHOTOELECTRON SPECTROSCOPY (1981) (1)
The Effect of Addend Variation on the Solubility of Single‐Wall Carbon Nanotubes (2002) (1)
Tracing the Ti-silicide formation by in situ ellipsometric measurements (2003) (1)
Interconnection of Chemically Functionalized Single‐Wall Carbon Nanotubes via Molecular Linkers (2003) (1)
Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman Spectroscopy (2002) (1)
Surface Conductivity of Diamond: A Novel Doping Mechanism (2006) (1)
THE L 2, 3M 45M45 AUGER SPECTRA OF METALLIC COPPER AND ZINC: THEORY AND EXPERIMENT (2013) (0)
Surface, interface and bulk properties of GaAs(111)B treated by Se layers (2001) (0)
Cross-sectional scanning-tunneling-spectroscopy of a-Si:H pn-doping superlattices (1994) (0)
O ct 2 00 6 Electronic structure of graphite / 6 H-SiC interfaces (2006) (0)
X-ray photoemission core level determination of the GaSb/AlSb heterojunction valence-band discontinuity. Comment and reply (1987) (0)
The density of states of ta-C, ta-C:H and a-C:H as determined by X-ray excited photoelectron spectroscopy and molecular dynamics calculation (1996) (0)
Preface: phys. stat. sol. (b) 245/7 (2008) (0)
3. Effect of an Intermediate Graphite Layer on the Electronic Properties of Metal/SiC Contacts (2011) (0)
Line Broadening of Phonons in the Raman Spectra of Isotopically Disordered SiC (2001) (0)
The Influence of Chemical Annealing on the Electronic Surface Properties of Amorphous Silicon (1995) (0)
30p-L-8 Moving grating technique for mobility and lifetime measurement (1994) (0)
Correlation effects at ideal SiC{0001}-(1 X 1) surfaces (2006) (0)
Low temperature transport on surface conducting diamond (2012) (0)
Thirteen Years with Manuel at the Max Planck Institute (2016) (0)
X‐ray photoemission study of the density of states of the transition metals (2008) (0)
Fermi Surface of Disordered Cu3 Au as Determined by Angleresolved Photoemission (1996) (0)
Analytical TEM Investigations of Si Nanowires grown by the VLS Mechanism from Au Templates (2007) (0)
Spectroscopic investigations of the decay $sup 223$Ra $Yields$ $sup 219$Rn (1974) (0)
Synthesis and characteristics of large area graphene on SiC (2010) (0)
Polymerization Of SWCNTs With Di‐Nitrens (2003) (0)
PHOTOEMISSION SPECTROSCOPY OF Bi2CaSr2Cu2O8+δ IN THE NORMAL AND SUPERCONDUCTING STATE (1989) (0)
Disappearance of the LO-Phonon Line in the UV-Raman Spectrum of 6H-SiC (2000) (0)
X-RAY PHOTOEMISSION STUDY OF THE ELECTRONIC STRUCTURE OF THE 3d TRANSITION METALS Sc TO Zn (1974) (0)
Multiplet splitting of x-ray photoemission spectra core levels in magnetic metals (2008) (0)
Electromagnetic transition rates in $sup 215$Po (1974) (0)
Al 2p Core Exciton in AlSb (1985) (0)
Modeling The Evolution of Ellipsometric Data During The Thermally Induced Pt-Silicide Formation: Activation Energies and Prefactors (1999) (0)
Mechanism of Reactive Ion Etching of 6H-SiC in CHF3/O2 Gas Mixtures (1997) (0)
Mapping disorder-order induced changes to the Fermi surface of Cu3Au using a new toroidal electron energy analyser (2005) (0)
Carrier Recombination Kinetics in Amorphous Doping Superlattices (1987) (0)
Mapping the conduction band structure of GaAs along the ΓΔX direction (1994) (0)
Bipolar treatment of the electrically detected photocarrier grating method (1995) (0)
Structure of interfaces in aSi:H/aSiN x :H superlattices (2014) (0)
Atomic structure and initial oxidation of hydrogen saturated 4H-SiC(1120) (2004) (0)
High-field magnetotransport studies of surface-conducting diamonds (2022) (0)
Propagation of Acoustic Phonons in Amorphous Superlattices (1986) (0)
Hydrogen and semiconductors: from surface to bulk and back (2002) (0)
Bonding geometries of fluorine in a-Si:F a photoemission study (2008) (0)
Contactless measurements of the photocarrier lifetime in amorphous silicon by a heterodyne experiment (1998) (0)
Surface states and surface umklapp transitions in angle-resolved photoemission from a GaAs(111)-2×2 surface (1996) (0)
Raman Excitation Profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC (2003) (0)
Attosecond-fast internal photoemission (2020) (0)
Comment on “Effect of average grain size on the work function of diamond films” [Appl. Phys. Lett. 79, 2835 (2001)] (2002) (0)
Is Persistent Photoconductivity in Nipi-Structures of Amorphous Silicon due to the Staebler-Wronski Effect? (1995) (0)
Non-Stoichiometry and the Electronic Structure of Amorphous Silicon Nitride (1984) (0)
Frequency gaps for zone-folded acoustic phonons in amorphous superlattices (1987) (0)
Influence of light on individual defect noise in a‐Si:H/a‐SiNx:H double barrier structures (1994) (0)
Thermal Equilibration Between Band Tail and Near Surface Defect States in Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys (1990) (0)
Signature of the Weak Bond-Dangling Bond Conversion Process in a-Si:H as Seen by Total Photoelectron Yield Spectroscopy (1993) (0)
COMMENT ON ""ELECTRONIC STRUCTURE OF TRANSITION METALS III. d-BAND RESONANCE AND REGGE POLE THEORY"" (1975) (0)
Spectroscopic Study of Hydrogen Induced Defect in a-Ge:H (1990) (0)
TOTAL VALENCE-BAND DENSITIES OF STATES OF III-V AND II-VI COMPOUNDS FROM XPS (1973) (0)
Angle resolved photoemission measurements of the linewidth asymmetry at critical points (1990) (0)
Low Energy Photoelectron Holography on Gaas (1992) (0)
Photoelectron emission from lithiated diamond (Phys. Status Solidi A 10∕2014) (2014) (0)
High Resolution Photoelectron Spectroscopy on SiC Surfaces (2002) (0)
OBSOLETE EVIDENCE FOR A LOCALIZED MAGNETIC MOMENT IN PARAMAGNETIC a -Mn FROM MULTIPLET SPLITTING (1973) (0)
Near-surface defects in amorphous semiconductors related to hydrogen incorporation (1991) (0)
Study of Temperature and Light Bias Effects on the Occupied Near Surface Defect Density in Hydrogenated Amorphous Silicon (1990) (0)

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