M. Asif Khan
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M. Asif Khanengineering Degrees
Engineering
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Electrical Engineering
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Applied Physics
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Engineering
M. Asif Khan's Degrees
- PhD Electrical Engineering University of Engineering & Technology, Peshawar
- Masters Electrical Engineering University of Engineering & Technology, Peshawar
- Bachelors Electrical Engineering University of Engineering & Technology, Peshawar
Why Is M. Asif Khan Influential?
(Suggest an Edit or Addition)M. Asif Khan's Published Works
Number of citations in a given year to any of this author's works
Total number of citations to an author for the works they published in a given year. This highlights publication of the most important work(s) by the author
Published Works
- High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction (1993) (726)
- Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges (2018) (655)
- An assessment of wide bandgap semiconductors for power devices (2003) (436)
- III–Nitride UV Devices (2005) (372)
- Nonresonant Detection of Terahertz Radiation in Field Effect Transistors (2002) (369)
- High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers (1992) (353)
- Metal semiconductor field effect transistor based on single crystal GaN (1993) (335)
- AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates (2000) (327)
- Luminescence from stacking faults in gallium nitride (2005) (324)
- Growth defects in GaN films on sapphire: The probable origin of threading dislocations (1996) (284)
- Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C (1995) (246)
- Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN (1997) (240)
- Si3N4/AlGaN/GaN–metal–insulator–semiconductor heterostructure field–effect transistors (2001) (238)
- High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN (1996) (227)
- Carrier mobility model for GaN (2003) (219)
- AlGaN/GaN HEMTs on SiC with over 100 GHz f/sub T/ and low microwave noise (2001) (218)
- Low noise p-π-n GaN ultraviolet photodetectors (1997) (217)
- Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire (2004) (203)
- Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions (1992) (197)
- Crack-free thick AlGaN grown on sapphire using AlN/AlGaN superlattices for strain management (2002) (191)
- Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates (1998) (190)
- Schottky barrier properties of various metals on n-type GaN (1996) (183)
- Schottky barrier photodetector based on Mg‐doped p‐type GaN films (1993) (179)
- Piezoresistive effect in wurtzite n‐type GaN (1996) (176)
- Metal contacts to n-type GaN (1998) (174)
- AlN/AlGaN superlattices as dislocation filter for low-threading-dislocation thick AlGaN layers on sapphire (2002) (172)
- Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates (1993) (170)
- Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias (1994) (169)
- Fundamental optical transitions in GaN (1996) (169)
- Milliwatt power deep ultraviolet light-emitting diodes over sapphire with emission at 278 nm (2002) (167)
- Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors (1996) (166)
- 250nmAlGaN light-emitting diodes (2004) (165)
- Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate (2000) (165)
- Reactive ion etching of gallium nitride in silicon tetrachloride plasmasa) (1993) (161)
- Anisotropic structural characteristics of (112̄0) GaN templates and coalesced epitaxial lateral overgrown films deposited on (101̄2) sapphire (2004) (159)
- Growth of high optical and electrical quality GaN layers using low‐pressure metalorganic chemical vapor deposition (1991) (150)
- High electron mobility GaN/AlxGa1−xN heterostructures grown by low‐pressure metalorganic chemical vapor deposition (1991) (143)
- Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells (2002) (139)
- Lattice and energy band engineering in AlInGaN/GaN heterostructures (2000) (136)
- Metastability and persistent photoconductivity in Mg‐doped p‐type GaN (1996) (136)
- GaN/AIGaN Heterostructure Devices: Photodetectors and Field-Effect Transistors (1997) (136)
- Schottky barrier photodetectors based on AlGaN (1998) (135)
- Electron beam induced current measurements of minority carrier diffusion length in gallium nitride (1996) (130)
- High responsitivity intrinsic photoconductors based on AlxGa1−xN (1996) (126)
- High-efficiency 269 nm emission deep ultraviolet light-emitting diodes (2004) (125)
- Pulsed atomic-layer epitaxy of ultrahigh-quality AlxGa1−xN structures for deep ultraviolet emissions below 230 nm (2002) (119)
- Self-heating effects at high pump currents in deep ultraviolet light-emitting diodes at 324 nm (2002) (117)
- The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-Type GaN (1998) (113)
- High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates (2000) (113)
- Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates (2000) (111)
- Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors (2001) (110)
- Vertical‐cavity, room‐temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low‐pressure metalorganic chemical vapor deposition (1991) (109)
- Short-channel GaN/AlGaN doped channel heterostructure field effect transistors with 36.1 cutoff frequency (1996) (108)
- Persistent photoconductivity in a two-dimensional electron gas system formed by an AlGaN/GaN heterostructure (1997) (106)
- AlGaN Deep-Ultraviolet Light-Emitting Diodes (2005) (105)
- SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors (2000) (105)
- AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA (2004) (104)
- Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates (1992) (102)
- Reduction of threading dislocation densities in AlN∕sapphire epilayers driven by growth mode modification (2006) (101)
- Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells (2002) (98)
- High transconductance heterostructure field‐effect transistors based on AlGaN/GaN (1996) (96)
- 7.5 kW/mm 2 Current Swith using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates (2000) (96)
- Near-band-edge photoluminescence of wurtzite-type AlN (2002) (95)
- High quality GaN–InGaN heterostructures grown on (111) silicon substrates (1996) (94)
- Growth of epitaxial GaN films by pulsed laser deposition (1997) (94)
- Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition (1992) (92)
- Time-resolved photoluminescence studies of InGaN epilayers (1996) (92)
- Ultraviolet Light-Emitting Diodes at 340 nm using Quaternary AlInGaN Multiple Quantum Wells (2001) (89)
- Mechanism of Radio-Frequency Current Collapse in GaN-AlGaN Field-Effect Transistors (2001) (87)
- Enhanced Luminescence in InGaN Multiple Quantum Wells with Quaternary AlInGaN Barriers (2000) (86)
- AlGaN multiple quantum well based deep UV LEDs and their applications (2006) (86)
- GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates (2000) (86)
- Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes (1997) (85)
- Properties and ion implantation of AlxGa1−xN epitaxial single crystal films prepared by low pressure metalorganic chemical vapor deposition (1983) (85)
- Indium-Silicon Co-Doping of High-Aluminum-Content AlGaN for Solar Blind Photodetectors (2001) (83)
- HALL MEASUREMENTS AND CONTACT RESISTANCE IN DOPED GAN/ALGAN HETEROSTRUCTURES (1996) (83)
- Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes (1997) (82)
- Visible-blind ultraviolet photodetectors based on GaN p-n junctions (1995) (81)
- Continuous Wave Milliwatt Power AlGaN Light Emitting Diodes at 280 nm (2004) (80)
- Gated photodetector based on GaN/AlGaN heterostructure field effect transistor (1995) (79)
- Improved performance of 325-nm emission AlGaN ultraviolet light-emitting diodes (2003) (79)
- AlGaN / GaN HEMTs on SiC with over 100 GHz fT and Low Microwave Noise (2001) (78)
- Characteristics of chemically assisted ion beam etching of gallium nitride (1994) (77)
- Violet‐blue GaN homojunction light emitting diodes with rapid thermal annealed p‐type layers (1995) (77)
- Band-edge exciton states in AlN single crystals and epitaxial layers (2004) (76)
- Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications (2003) (75)
- AlGaN single-quantum-well light-emitting diodes with emission at 285 nm (2002) (75)
- AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN (2003) (75)
- Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors (2004) (74)
- Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface (1997) (74)
- High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design (2004) (74)
- Pulsed atomic layer epitaxy of quaternary AlInGaN layers (2001) (74)
- GaN based heterostructure for high power devices (1997) (73)
- Two‐dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine‐alane as the aluminum source in low pressure metalorganic chemical vapor deposition (1995) (73)
- AlGaN/GaN/AlGaN double heterostructure for high-power III-N field-effect transistors (2003) (72)
- High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells (2000) (71)
- Visible–blind photoresponse of GaN-based surface acoustic wave oscillator (2002) (70)
- Deposition and surface characterization of high quality single crystal GaN layers (1993) (70)
- Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors (2000) (70)
- GaN/AlN digital alloy short‐period superlattices by switched atomic layer metalorganic chemical vapor deposition (1993) (69)
- GaN Homoepitaxy on Freestanding (11̄00) Oriented GaN Substrates (2002) (69)
- Millimeter wave emission from GaN high electron mobility transistor (2004) (68)
- Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction (1998) (68)
- Optical power degradation mechanisms in AlGaN-based 280nm deep ultraviolet light-emitting diodes on sapphire (2006) (67)
- Optical modes within III-nitride multiple quantum well microdisk cavities (1998) (67)
- Electrical properties and ion implantation of epitaxial GaN, grown by low pressure metalorganic chemical vapor deposition (1983) (63)
- Study of chemically assisted ion beam etching of GaN using HCl gas (1995) (63)
- High-quality AlGaN layers over pulsed atomic-layer epitaxially grown AlN templates for deep ultraviolet light-emitting diodes (2003) (63)
- Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors (2001) (62)
- Study of contact formation in AlGaN/GaN heterostructures (1997) (62)
- Pyroelectricity in gallium nitride thin films (1996) (62)
- Thermal analysis of flip-chip packaged 280 nm nitride-based deep ultraviolet light-emitting diodes (2005) (62)
- Vertical–cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature (1994) (62)
- High quality InN/GaN heterostructures grown by migration enhanced metalorganic chemical vapor deposition (2004) (61)
- Reflective filters based on single‐crystal GaN/AlxGa1−xN multilayers deposited using low‐pressure metalorganic chemical vapor deposition (1991) (61)
- Reactive ion etching of gallium nitride using hydrogen bromide plasmas (1994) (59)
- AlGaN-based 280nm light-emitting diodes with continuous wave powers in excess of 1.5mW (2004) (58)
- Accumulation Hole Layer in p-GaN/AlGaN Heterostructures (2000) (57)
- Room temperature intrinsic optical transition in GaN epilayers: The band-to-band versus excitonic transitions (1997) (57)
- Electronic structure, surface composition and long-range order in GaN (1993) (57)
- Characterisation of Pd Schottky barrier on n-type GaN (1996) (54)
- Fine structure of AlN∕AlGaN superlattice grown by pulsed atomic-layer epitaxy for dislocation filtering (2005) (54)
- Role of alloy fluctuations in photoluminescence dynamics of AlGaN epilayers (2006) (52)
- AlGaN-GaN heterostructure FETs with offset gate design (1997) (50)
- Neutral‐donor‐bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition (1995) (49)
- PIEZOELECTRIC DOPING IN ALINGAN/GAN HETEROSTRUCTURES (1999) (49)
- High temperature characteristics of Pd Schottky contacts on n-type GaN (1996) (49)
- AlGaN multiple-quantum-well-based, deep ultraviolet light-emitting diodes with significantly reduced long-wave emission (2003) (49)
- Low-frequency noise in AlGaN'GaN heterojunction field effect transistors on SiC and sapphire substrates (2000) (48)
- LOW PRESSURE METALORGANIC CHEMICAL-VAPOR DEPOSITION OF CUBIC GAN OVER (100) GAAS SUBSTRATES (1994) (47)
- Time-Resolved Electroluminescence of AlGaN-Based Light-Emitting Diodes with Emission at 285 nm (2003) (47)
- Free excitonic transitions in GaN, grown by metal‐organic chemical‐vapor deposition (1996) (46)
- Low Frequency Noise in GaN Metal Semiconductor and Metal Oxide Semiconductor Field Effect Transistors (2001) (46)
- Simulation of gate lag and current collapse in gallium nitride field-effect transistors (2004) (46)
- Microwave performance of 0.25μm doped channel GaN/AlGaN heterostructure field effect transistor at elevated temperatures (1997) (45)
- Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices (2001) (45)
- Vertically faceted lateral overgrowth of GaN on SiC with conducting buffer layers using pulsed metalorganic chemical vapor deposition (2000) (44)
- Microwave noise performance of AlGaN/GaN HEMTs (2000) (44)
- Optical bandgap formation in AlInGaN alloys (2000) (44)
- Band-edge luminescence in quaternary AlInGaN light-emitting diodes (2001) (42)
- AlGaN layers grown on GaN using strain-relief interlayers (2002) (42)
- Luminescence mechanisms in quaternary AlxInyGa1−x−yN materials (2002) (41)
- Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN (2004) (40)
- GaN/AlGaN multiple quantum wells on a-plane GaN pillars for stripe-geometry nonpolar ultraviolet light-emitting devices (2003) (40)
- Micro-pixel Design Milliwatt Power 254 nm Emission Light Emitting Diodes (2004) (40)
- Temperature‐mediated phase selection during growth of GaN on (111)A and (1̄1̄1̄)B GaAs substrates (1995) (40)
- GaN-based SAW delay-line oscillator (2001) (40)
- Observation of optically detected magnetic resonance in GaN films (1993) (39)
- The cyclotron resonance effective mass of two-dimensional electrons confined at the GaN/AlGaN interface (1996) (39)
- P/He ion implant isolation technology for AlGaN/GaN HFETs (1998) (39)
- Two-dimensional electron gas in AlGaN/GaN heterostructures (1997) (38)
- Effective g(*) factor of two-dimensional electrons in GaN/AlGaN heterojunctions (1999) (37)
- Growth and characterization of epitaxial layers on aluminum nitride substrates prepared from bulk, single crystals (2002) (37)
- Effects of persistent photoconductivity on the characteristic performance of an AlGaN/GaN heterostructure ultraviolet detector (1998) (36)
- Deposition of high quality wurtzite GaN films over cubic (111) MgAl2O4 substrates using low pressure metalorganic chemical vapor deposition (1996) (36)
- Low-frequency noise in AlGaN/GaN MOS-HFETs (2000) (35)
- Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm (2002) (34)
- DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress (2002) (33)
- Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures (2002) (31)
- Piezoresistive effect in metal–semiconductor–metal structures on p-type GaN (2000) (31)
- Maximum current in nitride-based heterostructure field-effect transistors (2002) (31)
- State-of-art CW power density achieved at 26 GHz by AlGaN/GaN HEMTs (2002) (30)
- High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz (2003) (29)
- Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four-wave mixing technique (2003) (29)
- InGaN-GaN based light-emitting diodes over (111) spinel substrates (1996) (28)
- High‐Temperature Performance of AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field‐Effect‐Transistors (2001) (28)
- Low frequency and 1/f noise in wide-gap semiconductors: silicon carbide and gallium nitride (2002) (28)
- Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistors (2002) (28)
- Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates (1996) (28)
- Exciton and carrier motion in quaternary AlInGaN (2003) (27)
- Electron emission through a multilayer planar nanostructured solid-state field-controlled emitter (2004) (27)
- Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors (2003) (27)
- Low-Frequency Noise in n-GaN with High Electron Mobility (1999) (27)
- Chemically assisted ion beam etching of gallium nitride (1995) (26)
- On the low frequency noise mechanisms in GaN/AlGaN HFETs (2003) (26)
- Dislocation generation at the coalescence of aluminum nitride lateral epitaxy on shallow-grooved sapphire substrates (2007) (26)
- MOCVD growth of semipolar AlxGa1−xN on m‐plane sapphire for applications in deep‐ultraviolet light emitters (2011) (25)
- Spin and interaction effects in Shubnikov–de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructures (2004) (25)
- Migration enhanced MOCVD (MEMOCVDTM) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate (2005) (24)
- High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors (2005) (24)
- Acceptor-bound exciton recombination dynamics in p-type GaN (1995) (23)
- Drift mobility of electrons in AlGaN/GaN MOSHFET (2001) (23)
- The nature of donor conduction in n‐GaN (1993) (23)
- 8×8 GaN Schottky barrier photodiode array for visible-blind imaging (1997) (22)
- GaN-Based Pyroelectronics and Piezoelectronics (2000) (22)
- Bulk-like intrinsic phonon thermal conductivity of micrometer thick AlN films. (2020) (21)
- Pulsed Metalorganic Chemical Vapor Deposition of Quaternary AlInGaN Layers and Multiple Quantum Wells for Ultraviolet Light Emission (2002) (21)
- Photoluminescence study of high quality InGaN–GaN single heterojunctions (1996) (21)
- Native defects and dopants in gan studied through photoluminescence and optically detected magnetic resonance (1995) (21)
- A microstructural comparison of the initial growth of AlN and GaN layers on basal plane sapphire and sic substrates by low pressure metalorganic chemical vapor deposition (1995) (21)
- Milliwatt power AlGaN quantum well deep ultraviolet light emitting diodes (2003) (21)
- Stable 20 W/mm AlGaN-GaN MOSHFET (2005) (21)
- Electromechanical Coupling Coefficient for Surface Acoustic Waves in GaN-on-Sapphire (2002) (21)
- Acousto-optic diffraction of blue and red light in GaN (2002) (20)
- Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters (2001) (20)
- Novel symmetry in the growth of gallium nitride on magnesium aluminate substrates (1996) (20)
- GaN based transistors for high temperature applications (1997) (20)
- AlGaN–GaN–AlInGaN induced base transistor (2000) (20)
- Matrix Addressable Micro-Pixel 280 nm Deep UV Light-Emitting Diodes (2006) (20)
- Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructure (1999) (19)
- Photoluminescence of AlGaN grown on bulk AlN substrates (2004) (19)
- Mobility Enhancement in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors (2003) (18)
- Time-resolved photoluminescence of quaternary AlInGaN-based multiple quantum wells (2002) (18)
- Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric (2012) (17)
- Schottky barrier heights of Ni, Pt, Pd, and Au on n-type GaN (1995) (17)
- Photoluminescence characterization of AlGaN-GaN pseudomorphic quantum wells and calculation of strain induced bandgap shifts (1992) (17)
- Optical characterization of AlGaN-GaN-AlGaN quantum wells (1992) (17)
- Reliability of AlGaN-based deep UV LEDs on sapphire (2006) (17)
- Dynamic behavior of hot-electron–hole plasma in highly excited GaN epilayers (2000) (17)
- Lifetime of nonequilibrium carriers in high‐Al‐content AlGaN epilayers (2005) (16)
- High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm (2002) (16)
- Interfacial Reactions Between Metal Thin Films and p-GaN (1995) (16)
- High transconductance AlGaN/GaN optoelectronic heterostructure field effect transistor (1995) (16)
- High quality AlxGa1−xN grown by metalorganic chemical vapor deposition using trimethylamine alane as the aluminum precursor (1994) (16)
- Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells (2001) (16)
- Digital oxide deposition of SiO2 layers for III-nitride metal-oxide-semiconductor heterostructure field-effect transistors (2006) (15)
- III-Nitride Transistors with Capacitively Coupled Contacts (2006) (15)
- Propagation of guided optical waves in thick GaN layers grown on (0001) sapphire (2000) (15)
- Metallurgical Study of Contacts to Gallium Nitride (1995) (14)
- High DC power 325 nm emission deep UV LEDs over sapphire [AlGaN] (2002) (14)
- Strain‐engineered novel III–N electronic devices with high quality dielectric/semiconductor interfaces (2003) (14)
- Annealing Study of Ion Implanted MOCVD and MBE Grown GaN (1995) (13)
- Increase of free carrier lifetime in nonpolar a-plane GaN grown by epitaxial lateral overgrowth (2004) (13)
- Heating of photogenerated electrons and holes in highly excited GaN epilayers (1999) (13)
- Thin n-GaN films with low level of 1/f noise (2001) (13)
- Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures (2005) (13)
- Optically Pumped Lasing at 353 nm Using Non-polar a-plane AlGaN Multiple Quantum Wells over r-plane Sapphire (2004) (12)
- White light generation using 280 nm light emitting diode pumps (2005) (12)
- Dry etching of using chemically assisted ion beam etching (1997) (12)
- Influence of stacking faults on the properties of GaN‐based UV light‐emitting diodes grown on non‐polar substrates (2005) (12)
- Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures (2005) (11)
- Transient response of highly doped thin channel GaN metal semiconductor and metal-oxide semiconductor field effect transistors (2002) (11)
- Surface morphologies of MOCVD-grown GaN films on sapphire studied by scanning tunneling microscopy (2002) (11)
- Room-temperature optically pumped laser emission from a-plane GaN with high optical gain characteristics (2004) (11)
- Detection of microwave radiation by electronic fluid in AlGaN/GaN heterostructure field effect transistors (1997) (11)
- Dependence of DC and RF characteristics on gate length for high current AlGaN/GaN HFETs (1997) (11)
- Prebreakdown and breakdown effects in AlGaN/GaN heterostructure field effect transistors (1998) (11)
- Internal polarization fields in GaN∕AlGaN multiple quantum wells with different crystallographic orientations (2005) (11)
- Infrared reflectance of AlN–GaN short period superlattice films (1996) (10)
- Cathodoluminescence of AlN–GaN short period superlattices (1996) (10)
- Mg-doped green light emitting diodes over cubic (111) MgAl2O4 substrates (1997) (10)
- Growth modes for monoclinic yttria‐stabilized zirconia during the martensitic transformation (2017) (10)
- Radio frequency response of GaN-based SAW oscillator to UV illumination by the Sun and man-made source (2002) (10)
- AlGaN/GaN doped channel heterostructure field effect transistors (1997) (9)
- Raman and Photoluminescence Studies of Undoped and Magnesium-Doped Gan Films on Sapphire (1994) (9)
- Performance stability of high‐power III‐nitride metal‐oxide semiconductor‐heterostructure field‐effect transistors (2005) (8)
- Localization and Hopping of Excitons in Quaternary AlInGaN (2003) (8)
- Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells (1997) (8)
- Finite‐Temperature Band Gap Renormalization in Highly Photoexcited GaN Epilayers (1999) (8)
- GaN-Al x Ga 1−x N Heterostructures Deposition by Low Pressure Metalorganic Chemical Vapor Deposition for Metal Insulator Semiconductor Field Effect Transistor (Misfet) Devices (1992) (8)
- GaN-based field effect transistors (1997) (7)
- Surface emission of InxGa1−xN epilayers under strong optical excitation (1997) (7)
- Investigation of the effect of indium mole fractions on recombination processes in AlInGaN layers grown by pulsed MOCVD (2003) (7)
- CHAPTER 10 – GaN and AlGaN Ultraviolet Detectors (1998) (7)
- LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (2001) (6)
- Hot Electrons and Holes in Highly Photoexcited GaN Epilayers (1999) (6)
- Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells (2001) (6)
- Indium incorporation effects on luminescence mechanisms in quaternary AlInGaN layers (2007) (6)
- Indium-incorporation-induced transformation of optical, photoluminescence and lasing properties of InGaN epilayers (2003) (6)
- High-performance AlGaN/GaN high electron mobility transistors on SiC (2002) (6)
- Composite-layered solid-state field controlled emitter for a better control of the cathode surface barrier (2005) (6)
- Strong ultraviolet emission from non‐polar AlGaN/GaN quantum wells grown over r‐plane sapphire substrates (2003) (6)
- INSULATED GATE III-N HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS (2004) (6)
- Growth of AlN films and their characterization (2006) (6)
- n‐Al0.75Ga0.25N epilayers for 250 nm emission ultraviolet light emitting diodes (2005) (5)
- Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region (2003) (5)
- Micro-Raman Spectroscopy: Self-Heating Effects In Deep UV Light Emitting Diodes (2002) (5)
- GENERATION-RECOMBINATION AND 1/f NOISE IN Al0.4Ga0.6N THIN FILMS (2002) (5)
- Conduction Band Energy Spectrum of Two‐Dimensional Electrons in GaN/AlGaN Heterojunctions (1999) (5)
- UV, blue and green light emitting diodes based on GaN-InGaN multiple quantum wells over sapphire and (111) spinel substrates (1997) (5)
- GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICES (2004) (4)
- Photoluminescence dynamics in highly nonhomogeneously excited GaN (2007) (4)
- Below band gap photoreflectance transitions in epitaxial GaN (2004) (4)
- Quaternary AlInGaN Materials System for UV Optoelectronics (2004) (4)
- Investigation of Aluminum and Titanium/Aluminum Contacts to n-Type Gallium Nitride (1996) (4)
- Atomic Scale Analysis of InGaN Multi-Quantum Wells (1999) (4)
- Observation of quantum Hall effect in 2D-electron gas confined in GaN/GaAlN heterostructure (1997) (4)
- HIGH-POWER SWITCHING USING III-NITRIDE METAL-OXIDE-SEMICONDUCTOR HETEROSTRUCTURES (2006) (4)
- Generation-recombination noise in GaN and GaN-based devices (2003) (4)
- Reliability and degradation modes of 280 nm deep UV LEDs on sapphire (2005) (3)
- Optical and electrical properties of 2-dimensional electron gas in GaN/AlGaN heterostructures (1997) (3)
- Atomic Layer Epitaxy of Boron Nitride (1993) (3)
- Pyroelectric Effect in Wurtzite Gallium Nitride (1996) (3)
- Low Frequency Noise in Gallium Nitride Field Effect Transistors (2002) (3)
- Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates (2000) (3)
- Photoluminescence investigation of a degenerate two-dimensional electron gas in GaN/AlGaN heterojunction (1997) (3)
- III-Nitride Based Ultraviolet Surface Acoustic Wave Sensors (2004) (3)
- Surface flashover effects in AlGaN/GaN HFETs (1998) (3)
- Low-Frequency Noise in SiO 2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates (1999) (3)
- Optical characterization of quaternary AlInGaN epilayer and multiple quantum wells grown by a pulsed metalorganic chemical vapor deposition (2011) (2)
- III-NITRIDE BASED UV LIGHT EMITING DIODES (2004) (2)
- Monte Carlo simulation of the exciton hopping in quaternary AlInGaN (2003) (2)
- Shaping of the band gap in AlInGaN alloys (2001) (2)
- High field flashover strength of intrinsic gallium nitride and aluminum nitride in vacuum (1996) (2)
- Gate Current Modeling for Insulating Gate III-N Heterostructure Field-Effect Transistors (2002) (2)
- GaN-based micro chemical sensor nodes for early warning chemical agents (2007) (2)
- AlGaN/GaN HFETs and Insulated Gate HFETs DC and RF stability (2004) (2)
- Response to ``Comment on `Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature' '' [Appl. Phys. Lett. 68, 3197 (1996)] (1996) (2)
- Erratum: “Near-band-edge photoluminescence of wurtzite-type AlN” [Appl. Phys. Lett. 81, 2755 (2002)] (2003) (2)
- Electronic Devices based on Group III Nitrides (2001) (2)
- A study of temperature field in a GaN heterostructure field-effect transistor (2003) (2)
- Metastability and persistent photoconductivity in Mgdoped ptype (2014) (2)
- Microwave Simulation on the Performance of High Power GaN/AlGaN Heterostructure Field Effect Transistors (1999) (2)
- Publisher’s Note: “Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes” [Appl. Phys. Lett.70, 2978 (1997)] (2011) (1)
- Role of polarization in the photoluminescence of C- and M-plane oriented GaN/AlGaN multiple quantum wells (2002) (1)
- Strain energy band engineering in AlGaInN/GaN heterostructure field effect transistors (1999) (1)
- Recent Progress in Gan Based Field Effect Transistors (1995) (1)
- Gallium nitride opens the way to visible-blind UV detectors (1999) (1)
- Growth of high resistance thick GaN templates by HVPE (2005) (1)
- Stripe Geometry Light Emitting Diodes over Pulsed Lateral Epitaxial Overgrown GaN for Solid State White Lighting (2001) (1)
- Dc and Microwave Characteristics of High Transconductance AlGaN/GaN Heterostructure Field Effect Transistors on Sic Substrates (1997) (1)
- Low Dynamic On-Resistance Kilovolt-Range AlGaN/GaN HFETs (2006) (1)
- Contactless characterisation of 2D-electrons in GaN/AlGaN HFETs (1997) (1)
- High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown on Bulk GaN, SiC, and Sapphire Substrates (2000) (1)
- Recent progress in AlGaN/GaN based optoelectronic devices (1995) (1)
- Electronic and Optoelectronic Devices Based on GaN-AIGaN Heterostructures (1994) (1)
- Pulsed Laser Deposition of Highly Crystalline Gan Films on Sapphire (1997) (1)
- Deep Ultraviolet Light Emitting Diodes with Emission below 300 nm (2005) (1)
- Bulk Breakdown in AlGaN/GaN HFETs (1998) (1)
- Optical investigation of quaternary Al2InyGa1- x- yN epilayers grown by using pulsed metalorganic chemical vapor deposition (2007) (1)
- Impact of Small Miscuts of (0001) Sapphire on the Growth of Al x Ga 1-x N/AlN (2005) (1)
- Deep ultraviolet light emitting diodes using AlGaN quantum well active region (2003) (1)
- Luminescence of Highly Photoexcited GaN Epilayers and Heterostructures Grown on Different Sapphire Crystal Planes (2005) (1)
- Luminescence of Highly Excited Nonpolar a-Plane GaN and AlGaN/GaN Multiple Quantum Wells (2004) (1)
- Simulation of AlGaN/GaN Heterostructure Field Effect Transistors (2005) (0)
- Atomic Layer Chemical Vapor Deposition of AlxGA1-xN for Solar Blind UV-Detectors (1988) (0)
- AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effec t Transistors on SiC (2000) (0)
- A Microstructural Analysis of Orientation Variation in Epitaxial AlN on Si, Its Probable Origin, and Effect on Subsequent GaN Growth (1996) (0)
- UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells (2002) (0)
- Characterization of InGaN structures grown by epitaxial lateral overgrowth over a-plane GaN template (2006) (0)
- WBGS Epitaxial Materials Development and Scale Up for RF/Microwave-Millimeter Wave Devices (2005) (0)
- RECENT ADVANCES IN 111-V NITRIDE ELECTRON DEVICES (1996) (0)
- Epitaxial growth and characterization of AlGaN/GaN HEMT devices on SiC substrates for RF applications (2007) (0)
- (abstract) Transmission Electron Microscopy of Al(sub x)Ga(sub 1-x)N/SiC Multilayer Structures Grown on Sapphire Substrates (1994) (0)
- Stresses experienced by AlN films grown on sapphire (2005) (0)
- Quaternary AlInGaN MQWs for Ultraviolet LEDs (2001) (0)
- Luminescence of highly excited nonpolar a‐plane GaN epilayers (2005) (0)
- Polarization Effects in the Photoluminescence of AlGaN and AlInGaN Based Quantum Well Structures (2001) (0)
- The Nature of Crystalline Defects in a‐plane GaN Films (2005) (0)
- Optical Reflectance of bulk AlN Crystals and AlN epitaxial films (2005) (0)
- Metalorganic chemical vapor deposition of quaternary AlInGaN multiple quantum well structures for deep ultraviolet emitters (2002) (0)
- Õ AlGaN Õ GaN – metal – insulator – semiconductor heterostructure field – effect transistors (2015) (0)
- High magnetic field studies of quantum transport and cyclotron resonance on 2D gas in GaN/GaAlN heterojunction (1998) (0)
- Influence of Indium Incorporation on Recombination Dynamics in AlInGaN Layers Grown by Pulsed Metal Organic Chemical Vapor Deposition (2003) (0)
- Room and Cryogenic Temperature Operation of 280 nm Deep Ultraviolet Light Emitting Diodes (2002) (0)
- A Microstrmural Comparison of the Initial Growth of AIN and GaN Layers on Basal Plane Sapphire and SiC Substrates by Low Pressure Mctalorganic Chemical Vapor Deposition (1997) (0)
- Luminescence Mechanisms in Quaternary Al x In y Ga 1x-y N Materials (2016) (0)
- Sublimation Growth of AlN Single Crystal on AlN Coated SiC Substrate. Phase 1. (1995) (0)
- Well Thickness And Doping Effects, And Room Temperature emission mechanisms in InGaN/GaN And GaN/AlGaN Multiple Quantum Wells (1997) (0)
- Publisher's Note: Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes (2011) (0)
- GaN epilayers and AlGaN/GaN multiple quantum wells grown on freestanding [1 1 00] oriented GaN substrates (2002) (0)
- Effects of reactive ion etching on the electrical properties of n-GaN surfaces (1995) (0)
- III-Nitride Field-Effect Transistors with Capacitively-Coupled Contacts (2006) (0)
- Persistent Photoconductivity in p-Type GaN Epilayers and n-Type AlGaN/GaN Heterostructures (1996) (0)
- First measurement of the electro-optic effect in GaN (1995) (0)
- A Structural Comparison of A1n Layers Grown on Basal Plane Sapphire and SiC Substrates by MOCVD (1994) (0)
- Power Limitation Due To Premature Breakdown In Algan/Gan Hfets (1997) (0)
- High Power 325 Light Emitting Diode Arrays by Flip-Chip Packaging (2002) (0)
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